JP2004334095A - Microscope system and method for observing object - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a far UV microscope which increases the quantity of illumination light of a visual field. <P>SOLUTION: Light with a broad spectral distribution radiated from a deuterium lamp 101 is made incident on a prism 104. The light from the prism 104 is spatially dispersed according to wavelengths. A part of the spatially wavelength dispersed light passes a slit of a field stop 107 and the other part of the light is shielded. A phase shift mask 109 on a stage 111 is irradiated with the light passed through the slit of the field stop 107. The light transmitted through the phase shift mask 109 is made incident on an objective lens 112. The light diverged by the objective lens 112 is made incident on a tube lens 113 and is imaged on an imaging apparatus 114. The light receiving surface of the imaging apparatus 114 is arranged to incline to the optical axis so as to compensate for the deviation of the focus due to a chromatic aberration. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention generally relates to a microscope apparatus, and particularly to a microscope apparatus suitable for observing and measuring an object using far ultraviolet light.
[0002]
[Prior art]
As semiconductor circuit structures become more highly integrated and miniaturized, shorter wavelength light is increasingly used as light used in photolithography, a key technology for higher integration of semiconductor integrated circuits. ing. For example, a manufacturing process that requires a design rule finer than 0.3 μm after a 64-Mbit Dynamic Random Access Memory (DRMA) is currently used in a deep ultraviolet region using a KrF (krypton fluoride) excimer laser. The lithography process is performed with a certain exposure wavelength of 248 nm.
[0003]
The next-generation lithography technology targets a 1-gigabit DRAM requiring a design rule of 0.15 μm or less, and a lithography technology using an ArF (argon fluoride) excimer laser is most promising. The exposure wavelength is 193 nm, which is in the vacuum ultraviolet region. Further, lithography techniques after ArF include lithography techniques using EB (Electron Beam) such as F2 (fluorine dimer) laser lithography (exposure wavelength: 157 nm) and EPL (Electron Projection Lithography), or lithography techniques using X-rays. Are being studied, and the wavelength of the light source is becoming shorter and shorter.
[0004]
A mask inspection technique is important as a technique for guaranteeing the accuracy of a mask used for lithography. As described above, as the lithography technology becomes finer, a mask inspection technology capable of detecting finer defects in a mask pattern is required. As the mask pattern becomes finer, the wavelength of the inspection light also becomes shorter in order to improve the mask inspection resolution. Typically, light having the same wavelength as the exposure wavelength is used for measuring the mask pattern. Further, from the viewpoint of suppressing chromatic aberration in the imaging lens system, it is required to limit the illumination wavelength for measuring the mask pattern.
[0005]
Unlike an exposure apparatus, light intensity such as an excimer laser is not required for measuring a mask pattern. Therefore, in order to improve the efficiency of the mask pattern measurement device, the mask pattern measurement device can use a lamp that emits light of a required wavelength. Mask pattern measurement can be performed by selecting light of a specific wavelength from the emitted light of a predetermined wavelength range of the lamp. In order to measure the pattern of a mask using light in the ultraviolet region, a lamp that emits ultraviolet light is used. FIG. 6 shows a configuration example of a conventional far ultraviolet microscope. Of the light from a light source such as a mercury lamp, light in the vicinity of a specific wavelength is selected by an interference filter functioning as a band-pass filter. Only light in the vicinity of the selected specific wavelength passes through the interference filter, and the transmitted light is collected by a lens on a mask as a measurement object. The light transmitted through the mask is magnified by the objective lens and received by the image sensor via the lens.
[0006]
As described above, by using the interference filter, it is possible to measure the mask pattern using the light of the predetermined wavelength. On the other hand, when the wavelength of the inspection light is short and light in the vacuum ultraviolet region is used, a lamp that can be used as a typical light source is a deuterium lamp. A deuterium lamp can emit light of about 100 nm or more, and is suitable for measuring a mask pattern used in vacuum ultraviolet photolithography as a wavelength of inspection light. However, when a lamp having a low luminance and a wide emission spectrum such as a deuterium lamp is used, and only light rays in a narrow wavelength range are selected, a problem of insufficient light quantity may occur.
[0007]
On the other hand, a microscope using a specific wavelength region is widely used, not limited to an optical system for mask pattern inspection. In such an optical system, it is important that a wide field of view and high brightness are ensured. In particular, when observation is performed in a short wavelength range, it is important to consider correction of chromatic aberration of the imaging optical system in the short wavelength range. This is because, in a short wavelength range, usable lens materials are limited, and the width of chromatic aberration correction, that is, so-called achromatism, becomes narrow.
[0008]
In addition to the above techniques, there has been proposed a technique of inspecting an exposure state by a microscope using ultraviolet light and visible light in a lithography process of a semiconductor device (for example, see Patent Document 1). This technique provides an ultraviolet microscope capable of simultaneously displaying an ultraviolet image and a color image of a subject. Light from a mercury lamp is incident on a semiconductor device as an object through an illumination lens system and an objective lens system. The imaging light path of the light reflected by the device is separated by a dichroic mirror into an ultraviolet light path and a visible light light path. Ultraviolet light is guided to an ultraviolet CCD (Charge-Coupled Device) camera.
[0009]
The ultraviolet CCD camera supplies a monochrome image signal to a display through an image processing device. On the other hand, the visible light is guided to a color CCD camera. The color CCD camera supplies a color image signal to a display through an image processing device. A high-resolution, high-magnification ultraviolet image of a semiconductor device and a color image in which the color of the semiconductor device can be visually recognized can be simultaneously displayed. However, this technique does not disclose the problem of insufficient illumination light amount due to short-wavelength light and its solution.
[0010]
[Patent Document 1]
JP-A-5-127096
[0011]
[Problems to be solved by the invention]
The present invention has been made in view of the above prior art, and one object of the present invention is to provide a microscope capable of improving the amount of illumination light.
[0012]
[Means for Solving the Problems]
A first aspect of the present invention is a microscope apparatus, comprising: a light source that emits light in a predetermined wavelength range; an optical unit that spatially disperses the light from the light source; and a part of the wavelength-dispersed light. And light means for irradiating the object with light from the selection means, and detection means for detecting light from the object. With this configuration, the amount of illumination light in the field of view can be improved.
[0013]
In the first aspect, in the visual field of the microscope device, the wavelength of irradiation light is changed according to a position, and the observation point of the object is irradiated with light in a predetermined wavelength range in the visual field. It is preferable to be arranged in the position where it is performed. With this configuration, an object can be observed with light in a desired wavelength range, or chromatic aberration of the optical system can be suppressed. Note that the observation includes a method of grasping the optical characteristics of the object, such as visual recognition, measurement, and inspection of the object using a monitor or the like. Also, the predetermined wavelength range includes a case where substantially only one wavelength of light is present.
[0014]
In the first aspect, the detecting means further includes optical means for condensing light from an object, and the detecting means converts the light received on the light receiving surface into an electric signal, and the condensing optical means It is preferable that the light receiving surface is inclined with respect to the optical axis so as to suppress the shift of the light condensing position according to the wavelength of light from the light source. With this configuration, a clear image in the field of view can be obtained. Alternatively, it is preferable that the optical means for spatially dispersing the wavelength of light include a prism. Thereby, light can be effectively dispersed.
[0015]
Alternatively, it is preferable that the selection unit includes an opening through which a part of the spatially dispersed light can pass. Further, it is preferable that the selection unit is arranged at a position conjugate with the object. Thereby, light in a desired wavelength range can be effectively selected. Alternatively, it is preferable that the selection unit includes an opening corresponding to an observation wavelength region in a field of view for adjusting a wavelength of light irradiated on the object. This allows effective wavelength adjustment. Incidentally, the selecting means can be constituted by a plurality of separable members.
[0016]
In the first aspect, the detecting means further includes optical means for forming an image of light from an object on the detecting means, wherein the detecting means converts the light received on the light receiving surface into an electric signal, and the light receiving surface comprises an image forming device. Preferably, it is inclined with respect to the optical axis so as to substantially coincide with the plane. This makes it possible to obtain a clear image in the visual field.
[0017]
Another aspect of the present invention is a method of irradiating an object with light and observing the object by detecting light from the illuminated object, wherein light from a light source that emits light in a predetermined wavelength range is provided. Spatially wavelength-dispersing, spatially blocking part of the spatially wavelength-dispersed light, and selecting light in a specific wavelength range by passing a part of the light; and Irradiating the object with the reflected light; and detecting light from the object. With this configuration, the amount of illumination light in the field of view can be improved.
[0018]
Further, in the above other aspect, it is preferable that the step of detecting the light detects light from an observation point of the object arranged at a predetermined position in a visual field. With this configuration, an object can be observed with light in a desired wavelength range.
[0019]
Furthermore, in the above other aspect, the method further comprises the step of condensing light from the object, and the detecting step includes the step of condensing the light condensed at a converging point at a different position according to a wavelength in the condensing step. It is preferable to detect on the same plane. This makes it possible to obtain a clear image in the visual field.
[0020]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments to which the present invention can be applied will be described. The following description is for describing an embodiment of the present invention, and the present invention is not limited to the following embodiment. For clarity of explanation, the following description is appropriately omitted and simplified. Also, those skilled in the art will be able to easily change, add, or convert each element of the following embodiments within the scope of the present invention. In the drawings, the same reference numerals indicate the same components, and unnecessary description will be omitted.
[0021]
Embodiment 1 FIG.
FIG. 1 is a configuration diagram showing a schematic configuration of a far ultraviolet microscope 100 according to the present embodiment. The far-ultraviolet microscope 100 according to the present embodiment spatially disperses light in a predetermined wavelength range according to a wavelength, and irradiates an object using the dispersed light. The deep ultraviolet microscope 100 of the present embodiment is suitable for measuring a mask pattern of a phase shift mask, for example. In measuring the mask pattern of the phase shift mask, the far ultraviolet microscope 100 measures the phase difference of the transmitted light of the mask pattern. In the following, the present embodiment will be described by taking the measurement of a phase shift mask as an example, but the present invention is not limited to this application. As will be understood, what is shown as a lens in the following description can be composed of a plurality of lenses.
[0022]
In FIG. 1, reference numeral 101 denotes a deuterium lamp as a light source. The deuterium lamp 101 can typically emit light at 100-600 nm. Taking the pattern measurement of a mask used for ArF lithography (193 nm) as an example, the far ultraviolet microscope 100 can use light of 190 to 200 nm, for example. The deuterium lamp 101 emits deuterium excited by an electron beam passing through a pinhole. Therefore, the pinhole becomes the size of the light source. Compared to other vacuum ultraviolet lamps that can emit vacuum ultraviolet light, deuterium lamps have a large amount of light and have characteristics similar to a point light source, so that vacuum ultraviolet light used for mask pattern measurement can be obtained. Suitable for use as a lamp. In addition, since reflection from the electrode forming the pinhole causes non-uniformity in the light from the lamp, an image of the light emitting point of the lamp is formed on another pinhole or slit using a relay lens. It is preferable to limit the spread of lamp issuance points.
[0023]
Reference numeral 102 denotes a spectroscope that splits light from the deuterium lamp 101. The spectroscope 102 can selectively emit light in a predetermined wavelength range of the light from the deuterium lamp 101 and, at the same time, within the selected predetermined wavelength range, can spatially disperse the light according to the wavelength and emit the light. The spectroscope 102 includes a first lens 103, a prism 104, a mirror 105, a second lens 106, and a field stop 107 having a slit having a predetermined width. The field stop 107 blocks a part of the incident light and allows a part of the light to pass. The first lens 103 collects light from the deuterium lamp 101 and irradiates the light to the prism 104. The prism 104 spatially disperses the received light according to the wavelength. The mirror 105 reflects the dispersed light from the prism 104. The second lens 106 focuses the dispersed light from the mirror 105 on the field stop 107. The field stop 107 defines a field of view by blocking light other than light passing through the slit.
[0024]
Reference numeral 108 denotes a third lens that receives light from the field stop 107, and reference numeral 109 denotes a phase shift mask as an object to be measured. 110 is a condenser lens for condensing light on an object. Reference numeral 111 denotes a stage on which the phase shift mask 109 is mounted. The stage 111 can be moved in XY directions parallel to the mounting surface by a driving device (not shown). Reference numeral 112 denotes an objective lens that receives light transmitted through the phase shift mask 109, and reference numeral 113 denotes a tube lens that focuses light from the objective lens 112 on an imaging device 114. The imaging device 114 converts the received light into an electric signal according to the intensity. As the imaging device 114, a CCD (Charge-Coupled Device) camera, a CMOS sensor, a photodiode array, or the like can be used. A monitor (not shown) for observing an object or an image processing system (not shown) for measuring and inspecting an object can be connected to the imaging device 114.
[0025]
Light having a broad spectral distribution emitted from the deuterium lamp 101 enters the first lens 103 and exits from the first lens 103 as parallel light. The parallel light from the lens 103 enters the prism 104. Due to the difference in the refractive index depending on the wavelength, the light from the prism 104 is spatially dispersed according to the wavelength. As shown in FIG. 1, the refraction angle of short wavelength light is large and the refraction angle of long wavelength light is small. The wavelength of the light from the prism 104 changes in the dispersion direction according to a change in position. Incidentally, the prism 104 used for light dispersion can be constituted by a plurality of prisms. Alternatively, a diffraction grating can be used instead of the prism to spatially disperse the wavelength of light. From the viewpoint of light utilization efficiency, it is preferable to use a prism, particularly a prism provided with an anti-reflection coating.
[0026]
The scattered light from the prism 104 is reflected by the mirror 105 and enters the second lens 106. The light collected by the second lens 106 enters the field stop 107. The field stop 107 is arranged at a position conjugate with the sample surface of the phase shift mask 109 mounted on the stage 111. A part of the spatially dispersed light passes through the slit of the field stop 107, and the other light is shielded. Thus, the field stop 107 can select the wavelength range of transmitted light of wavelength-dispersed light while defining the field of view.
[0027]
Light passing through the slit of the field stop 107 enters the condenser lens 110 via the third lens 108. The light collected by the condenser lens 110 is applied to the phase shift mask 109 on the stage 111. Light transmitted through the phase shift mask 109 enters the objective lens 112. The light magnified by the objective lens 112 enters the tube lens 113 and forms an image on the imaging device 114. The light receiving surface of the image pickup device 114 is arranged to be inclined with respect to the optical axis. This will be described later. In this embodiment, the transmitted light of the object is measured. However, as will be understood, the present invention can be applied to a microscope that irradiates the surface of the object with light from a light source and observes and measures the reflected light. is there.
[0028]
The measurement of the phase shift mask will be described as an example. In the measurement of the mask pattern of the phase shift mask, the measurement area that is a part of the mask pattern is aligned, and the phase difference in the aligned area is measured. In order to specify the measurement area and perform the alignment, it is preferable that a field of view that is wider than a certain area than the measurement area is secured. FIG. 2 is a conceptual diagram showing a state in the visual field of the far ultraviolet microscope 100 of the present embodiment. 2, reference numeral 201 denotes a visual field, 202 denotes a measurement wavelength region in the visual field, and 203 denotes a measurement region in the phase difference mask 109. The measurement wavelength region 202 is a region irradiated with light having a wavelength used for measuring the phase difference of the phase shift mask, and the measurement region is a region to be measured by the phase shift mask. 2A illustrates a state where the measurement region 203 of the phase difference mask is outside the measurement wavelength region 202, and FIG. 2B illustrates a state where the measurement region 203 is within the measurement wavelength region 202.
[0029]
In the field of view 201, light is spatially wavelength-dispersed. Therefore, the wavelength of the irradiation light changes according to the change of the coordinates in the dispersion direction in the visual field. In the example of FIG. 2, the wavelength increases from the left end to the right end of the visual field 201. In order to measure a mask pattern, it is necessary to measure transmitted light due to light in a narrow wavelength range around a specific wavelength. In the deep ultraviolet microscope 100 of the present embodiment, since the wavelength is spatially different in the field of view 201, by arranging the measurement area 203 in the area of the field of view irradiated with light of a specific wavelength, Measurement can be performed using light in a wavelength range within a desired wavelength range. Thereby, even when using light in a short wavelength range including light in a predetermined wavelength range, the problem of chromatic aberration of the imaging optical system can be substantially solved.
[0030]
In this example, in the alignment step, alignment is performed such that the measurement region 203 of the mask pattern is arranged within the measurement wavelength region 202. As shown in FIG. 2A, the mask pattern measurement region 203 is outside the measurement wavelength region 202, but is arranged in the visual field 201, so that the measurement region 203 can be easily specified. Therefore, as shown in FIG. 2B, the measurement region 203 can be efficiently positioned within the measurement wavelength region 202. Positioning can be performed by moving the stage 111. With the measurement area 203 aligned with the measurement wavelength area 202, the phase difference measurement of the mask pattern is performed. As described above, in the deep ultraviolet microscope 100 of the present embodiment, a wide field of view is ensured, so that the alignment of the mask pattern can be performed efficiently.
[0031]
FIG. 3 is a graph showing a wavelength range used in a microscope according to a conventional mask pattern measurement technique (FIG. 2A), and shows a case where the deep ultraviolet microscope 100 according to the present embodiment is used for mask pattern measurement. It is a graph (FIG.2 (b)) which shows the wavelength range used. In a conventional measurement method, for example, measurement of a mask pattern is performed using light in a wavelength region indicated by 301. As shown in FIG. 2B, the deep ultraviolet microscope 100 of this embodiment can measure a mask pattern using light in a wavelength region indicated by 302.
[0032]
Light in the wavelength region indicated by 302 is used to illuminate the entire field of view. Since the wavelength region 202 is larger than the conventional wavelength region 201, the amount of illumination light can be increased in the entire field of view. Taking the measurement near 193 nm as an example, the entire field of view is illuminated using, for example, light of 190 to 200 nm. As a result, the problem of insufficient light quantity in the entire visual field in the conventional measurement method can be effectively solved. In the actual measurement of an object, as described above, by arranging the object in a region irradiated with light near 193 nm, measurement in a desired wavelength range can be performed. Can be solved at the same time. As described above, the far-ultraviolet microscope of the present embodiment can provide a wide field of view and a necessary illumination light amount within the field of view, and can effectively suppress chromatic aberration of the optical system in measurement.
[0033]
Referring to FIG. 1, the light receiving surface of image pickup device 114 is arranged to be inclined with respect to the optical axis. Thereby, the problem of chromatic aberration can be solved. In general, when illuminating the entire field of view with light containing a predetermined range of wavelengths, it is necessary to consider the chromatic aberration of the lens system. In particular, when performing observation and measurement in a short wavelength region, it is important to consider the correction of chromatic aberration of the lens system. In order to perform high-precision observation and measurement, a lens system having a constant focal length at all wavelengths in a used wavelength region is required. On the other hand, there is a restriction on the glass material in the short wavelength region, and the material that can be used for the lens is limited to a specific material such as synthetic quartz or calcium fluoride. For this reason, the focal length cannot be kept constant over a wide wavelength range, and the width of achromatism becomes extremely narrow.
[0034]
The far-ultraviolet microscope 100 of the present embodiment can solve the problem of chromatic aberration in a short wavelength range by using the spatially dispersed light and the imaging device 114 inclined with respect to the optical axis. As described with reference to FIG. 1, light from an object is enlarged by the objective lens 112 to form an image on the imaging device 114. Since the light of each wavelength has a different focal length, the focal position is shifted for each wavelength. Typically, as shown in FIG. 1, the light condensing position of the short wavelength light is formed near the imaging optical system, and the light condensing position of the long wavelength light is formed far from the imaging optical system.
[0035]
Since the light from the object is spatially wavelength-dispersed, the position of the focal point in the optical axis direction gradually changes in the direction in which the wavelength changes. In the example of FIG. 1, the wavelength increases from left to right toward the light receiving surface of the imaging device, and the focal length increases, or the focal point position becomes farther from the object. The imaging device 114 is arranged to be inclined so as to compensate for the shift of the focal point due to the wavelength, and is arranged such that the focal point of each wavelength is formed on the imaging device 114.
[0036]
In the example of FIG. 1, in a direction perpendicular to the optical axis, a portion that receives short-wavelength light (the left end when facing the light-receiving surface) is close to the object, and gradually increases in distance as the wavelength increases. (The right end toward the light receiving surface) is inclined so as to be farthest from the imaging optical system. Note that the shift of the focal length changes depending on the correction amount for the chromatic aberration of each lens. An appropriate correction amount for the chromatic aberration of each lens or the inclination angle of the imaging device 114 is appropriately selected.
[0037]
Note that, for example, in measurement of a phase shift mask, the imaging device does not necessarily need to be tilted. Light in a wide wavelength range is used in the alignment process, but the alignment process can tolerate a certain degree of image blur. Also, because the phase difference measurement is performed using light in the vicinity of a specific wavelength, the resolution of the phase difference measurement is not affected. For example, by arranging this wavelength region at the center of the field of view and arranging the measurement region within the measurement wavelength region, measurement accuracy can be ensured. However, an unclear image at the end of the field of view may hinder efficient alignment. Therefore, it is preferable that the imaging device is arranged to be inclined so as to compensate for the shift of the focal point. Alternatively, when an object is observed and measured in a certain area in the visual field, tilting the imaging apparatus as described above has a great effect from the viewpoint of suppressing the influence of chromatic aberration.
[0038]
Although the present embodiment has been described by taking the measurement of a phase shift mask as an example, the present invention is not limited to a mask pattern measuring apparatus, but also observes an object using a monitor, measures a coordinate, measures a side line, It can be applied to various microscope applications such as pattern inspection and wafer inspection. Further, the present invention is particularly suitable for a microscope that uses far ultraviolet light of 300 nm or less, particularly vacuum ultraviolet light of 200 nm or less as a measurement light, but ultraviolet light of 400 nm or less, or light of other wavelengths including visible light. It is possible to apply to a microscope using. As the ultraviolet light source, other lamps such as a xenon flash lamp can be used in addition to the deuterium lamp. These points are the same in the following embodiments.
[0039]
Another embodiment.
FIG. 4 is a configuration diagram illustrating a schematic configuration of a far ultraviolet microscope 400 according to another embodiment. FIG. 4 shows only the optical path of light having a specific wavelength. In FIG. 4, elements denoted by the same reference numerals as those in FIG. 1 have substantially the same configuration as the elements described in FIG. 1, and unnecessary description will be omitted. In FIG. 4, reference numeral 401 denotes a spectroscope, which selectively transmits light in a predetermined wavelength range of the light from the deuterium lamp 101, and simultaneously spatially disperses the light according to the wavelength. The spectroscope 401 includes a movable prism 402 and a movable mirror 403.
[0040]
The prism 402 and the mirror 403 can be integrally moved, and are configured to be integrally rotatable about a rotation axis. Since the accuracy of the light from the spectroscope affects the measurement accuracy, high-precision wavelength adjustment of the spectroscope is required. The spectroscope 401 of this embodiment is configured such that the angle of the light of the prism 402 and the mirror 403 with respect to the incident light from the first lens 103 changes integrally. Thereby, the wavelength can be adjusted without causing a shift of the optical axis. Since the wavelength of the measurement point can be effectively selected, highly accurate measurement can be realized.
[0041]
FIG. 5 is a plan view showing an exemplary configuration of the field stop 107. In measuring a mask pattern, wavelength accuracy in a measurement region is important in order to realize highly accurate measurement. In order to determine the wavelength at the measurement point with high accuracy, it is preferable to measure the wavelength of the light using a spectrophotometer and to carry out the carburetion of the wavelength using the spectroscope 401. In order to perform highly accurate measurement, it is preferable to measure light in the same region as the measurement region of the mask pattern. The field stop 107 of this embodiment includes a slit 501 for measuring a mask pattern and a slit 502 for measuring a wavelength. It is preferable that the wavelength measurement slit 502 is formed at a position corresponding to a measurement region used in actual measurement and has a shape corresponding to the measurement region. The light that has passed through the wavelength measurement slit 502 is configured to substantially coincide with the measurement area in the visual field.
[0042]
In the wavelength adjustment, an optical fiber, which is a light receiving module of a spectrophotometer, is installed on a sample installation surface on a stage. The optical fiber is arranged so that only light that has passed through the wavelength measurement slit 502 is incident. The wavelength is adjusted by moving the prism 402 and the mirror 403 of the spectroscope 401, and the spectroscope 401 is adjusted so that the intensity peak coincides with the desired wavelength. Since the field stop 107 has the wavelength adjusting slit, the wavelength of the measuring light can be adjusted efficiently. By performing wavelength measurement using light that has passed through a slit that substantially coincides with the phase difference measurement region, measurement wavelength accuracy can be improved. Note that, instead of the field stop 107, a plate having a slit for wavelength adjustment can be separately provided.
[0043]
【The invention's effect】
ADVANTAGE OF THE INVENTION According to this invention, the microscope apparatus which improves the illumination light amount in a visual field can be provided.
[Brief description of the drawings]
FIG. 1 is a configuration diagram illustrating a schematic configuration of a far ultraviolet microscope according to a first embodiment.
FIG. 2 is a conceptual diagram showing a state in a visual field of the far ultraviolet microscope according to the first embodiment.
FIG. 3 is a graph illustrating a wavelength range used by the deep ultraviolet microscope according to the first embodiment;
FIG. 4 is a configuration diagram showing a schematic configuration of a far ultraviolet microscope according to another embodiment.
FIG. 5 is a plan view showing an exemplary configuration of a field stop of a far ultraviolet microscope according to another embodiment.
FIG. 6 is a configuration diagram showing a schematic configuration of a far-ultraviolet microscope in a conventional technique.
[Explanation of symbols]
101 deuterium lamp, 102 spectroscope, 103 first lens, 104 prism, 105 mirror, 106 second lens, 107 field stop, 108 third lens, 109 phase shift mask, 110 condenser lens, 111 stage , 112 Objective lens, 113 Tube lens, 114 Imaging device, 201 field of view, 202 Measurement wavelength region in field of view, 203 Measurement region in phase difference mask 109, 401 Spectroscope, 402 Movable prism, 403 Movable mirror, 501 Mask pattern Slit for measurement, 502 Slit for wavelength measurement

Claims (11)

A microscope device that irradiates an object with light and detects light from the irradiated object,
A light source that emits light in a predetermined wavelength range,
Optical means for spatially wavelength-dispersing light from the light source,
Selection means for passing light in a part of the wavelength range of the wavelength-dispersed light,
Optical means for irradiating the object with light from the selection means,
Detecting means for detecting light from the object,
A microscope device comprising: Within the field of view of the microscope device, the wavelength of the irradiation light changes depending on the position,
The observation point of the object is arranged at a position where light in a predetermined wavelength range is irradiated in the visual field,
The microscope device according to claim 1. Further, the detecting means comprises an optical means for condensing light from an object,
The detecting means converts the light received on the light receiving surface into an electric signal, and controls the light receiving surface along the optical axis so as to suppress a shift of a light collecting position according to a wavelength of the light from the light collecting optical means. Leaning against
The microscope device according to claim 1. The microscope apparatus according to claim 1, 2 or 3, wherein the optical unit for spatially dispersing the wavelength of light includes a prism. The microscope apparatus according to claim 1, wherein the selection unit includes an opening through which a part of spatially wavelength-dispersed light can pass. The microscope device according to claim 5, wherein the selection unit is arranged at a position conjugate with the object. The microscope apparatus according to claim 5, wherein the selection unit includes an opening corresponding to an observation wavelength region in a field of view for adjusting a wavelength of light applied to the object. Further, an optical unit that forms an image of light from an object on the detection unit,
The detecting means converts the light received on the light receiving surface into an electric signal,
The light receiving surface is inclined with respect to the optical axis so as to substantially coincide with the image forming surface,
The microscope device according to claim 1. A method of illuminating an object and observing the object by detecting light from the illuminated object,
Spatially wavelength-dispersing light from a light source that emits light in a predetermined wavelength range;
A step of selecting a light in a specific wavelength range by spatially shielding a part of the spatially wavelength-dispersed light and passing a part of the light,
Irradiating the object with the selected light,
Detecting light from the object;
A method comprising: The method of claim 9, wherein detecting the light comprises detecting light from an observation point of the object located at a predetermined position in a field of view. The method further includes the step of condensing light from the object,
The method according to claim 9, wherein the detecting the light includes detecting, in the same plane, the light condensed at condensing points at different positions according to the wavelength in the condensing step.

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