JP2004327921A - Semiconductor element and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor element which does not occur problem of stress concentration, which does not damage the underlying part of bump electrodes, which hardly occurs insulation fault between bump electrodes, which hardly occurs break fault, and which does not reduce the reliability of ACF connection, during bonding. <P>SOLUTION: In the semiconductor element in which one or more bump electrode 7 is provided on one or more electrode made of multilayered metal wirings 2, 4 constructed on a semiconductor substrate 1, after a metal body (7) is formed on the electrode, the bump electrode 7 is produced by roughening the surface of the metal body rougher than when it is formed. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a semiconductor element and a semiconductor device in which one or a plurality of bump electrodes are provided on one or a plurality of electrode portions formed of a multilayer metal wiring formed on a semiconductor substrate.
[0002]
[Prior art]
In a semiconductor device, particularly a liquid crystal display device, electrical connection between a liquid crystal panel and a semiconductor element is performed by using a tape carrier package (TCP) or a chip on film (COF), or by a method using a chip on glass (COG). Connection has been made.
In TCP and COF, electrical connection is mainly obtained by joining a wiring pattern formed on a flexible film and a bump electrode provided on a semiconductor element. In COG, an electrical connection is obtained mainly by using an ACF anisotropic conductive adhesive between a wiring pattern formed on a glass panel and a bump electrode provided on a semiconductor element. The anisotropic conductive adhesive includes ACF (Anisotropic Conductive Film) and ACP (Anisotropic Conductive Paste).
[0003]
Normally, when bonding a wiring pattern on a flexible film to a bump electrode provided on a semiconductor element, a eutectic of tin plating applied to the wiring pattern and gold constituting the bump electrode is generated, and a stable and good A method for obtaining a bonding state is employed. In addition, a method of applying gold plating to a wiring pattern and obtaining conduction by gold-gold bonding is also employed.
In addition, a connection method mainly using an ACF or the like is employed for joining a wiring formed on a glass panel and a semiconductor element.
[0004]
In recent years, particularly in liquid crystal display devices, efforts for high-density mounting have been vigorous, but as one of the means, increasing the output of semiconductor elements and increasing the fine pitch of wiring patterns are important. Therefore, in a package form such as TCP, it is necessary to make the wiring pattern thinner and the bump electrode smaller in accordance with the increase in the number of outputs and the fine pitch, and it is necessary to avoid a reduction in the area that can be joined at the electrical junction. Can not do.
One of the most important items as a product or module is reliability. However, the above-mentioned joints are required to have particularly high mounting reliability in terms of joint strength and material strength.
[0005]
[Patent Document 1]
JP-A-7-161722 [Patent Document 2]
Japanese Patent Application Laid-Open No. 9-252003
[Problems to be solved by the invention]
In the prior art, in a semiconductor device having a multilayer wiring as shown in FIG. 3, an opening in an interlayer insulating film 3 between a first metal wiring 2 and a second metal wiring 4 on a semiconductor substrate 1 is provided. And a step in the opening of the surface protection film 5, a concave portion is formed in or near the electrode portion. Therefore, the bump electrode 7 formed thereon by the electrolytic plating method is affected by the concave portion of the base, and a concave portion is generated at the center of the surface of the bump electrode 7. Note that a barrier metal layer 6 is provided between the bump electrode 7 and the metal wiring 4 and the surface protection film 5.
[0007]
When a semiconductor element is mounted on a flexible film such as a TCP or the like, and a bump electrode surface has a dent, as shown in FIG. 4, bonding to an inner lead wiring 8 provided on the surface of a flexible film (not shown). The area becomes smaller. As a result, there is a problem in that a problem such as insufficient bonding strength or stress concentration during bonding occurs. Further, if the bonding pressure is increased to improve the bonding strength, damage to the underlying portion of the bump electrode 7 will be increased, which will cause the destruction of the semiconductor element, and the bump electrode 7 itself will be easily deformed. There is a problem in that insulation failure such as short-circuiting between the crushed and widened bump electrodes 7 is likely to occur.
[0008]
Furthermore, at the time of bonding, since the sinking of the inner lead wiring 8 is particularly large at the edge of the bump electrode 7, the deformation of the film carrier tape (not shown) itself at the bonding is also large. As a result, the film carrier tape and the wiring pattern are peeled off, and in particular, at the place where the film carrier tape is peeled off, the strength of the inner lead wiring 8 is reduced, which causes a problem of disconnection failure.
[0009]
Regarding COG, the narrowing of the bonding area or contact area is directly due to the characteristics of the ACF connection in which the wiring on the glass panel and the bump electrode of the semiconductor element are thermocompressed via a paste in which fine metal particles are dispersed. This leads to a reduction in mounting reliability and connection reliability. In particular, a reduction in the amount of trapped particles during bonding, that is, the amount of ACF particles trapped per unit area of the joint portion, has a problem that the reliability of the connection is greatly reduced.
[0010]
In order to solve the above-mentioned problem, conventionally, as shown in FIG. 5, in order to reduce the degree of depression on the surface of the bump electrode 7, one layer is formed so that the electrode portion is not formed in the opening of the interlayer insulating film 3. The electrical connection between the first metal wiring 2 and the second metal wiring 4 is performed.
Further, Patent Document 1 discloses a technique for reducing the degree of unevenness by providing a plurality of small openings in an interlayer insulating film or a surface insulating film of an electrode portion and flattening the surface of a bump electrode. A technique for reducing a step while leaving an interlayer insulating film or a surface insulating film in a region of a portion is disclosed.
Further, as shown in FIG. 6 or FIG. 7, after the bump electrode 7 is formed, the surface line 9 of the bump electrode 7 is polished as shown in FIG. A technique for realizing (b) is disclosed. In FIG. 7A, polishing is performed in a state where the resist protective film 10 is formed.
[0011]
However, as shown in FIG. 5, when the connection between the first-layer metal wiring 2 and the second-layer metal wiring 4 is performed while avoiding the electrode portion in order to reduce the degree of dent on the surface of the bump electrode, In addition, there is a problem that the semiconductor device is inevitably enormous in size, and contrary to the recent trend in which high-density mounting is regarded as important, there is still a step.
In the case of Patent Document 1, the degree of unevenness is reduced by providing a plurality of small openings in the interlayer insulating film or the surface insulating film of the electrode portion, and even if the surface of the bump electrode is flattened, Although it becomes smaller, there is a problem that the step itself remains.
[0012]
In the case of Patent Document 2, as shown in FIG. 6 or FIG. 7, the surface of the bump electrode 7 is polished to achieve flattening. However, even if the surface of the bump electrode 7 is flattened by polishing and preparation for obtaining connection with the wiring pattern on the flattened surface is prepared, the bonding tool is inclined due to the inclination of the bonding tool of the bonding apparatus and the variation of the inner lead wiring width. There is a problem that local stress concentration at the time is inevitable.
[0013]
The present invention has been made in view of the circumstances described above, and does not cause a problem of stress concentration at the time of bonding, does not damage a base portion of the bump electrode, and has an insulation failure between bump electrodes. An object of the present invention is to provide a semiconductor element in which the occurrence of disconnection hardly occurs, the disconnection failure hardly occurs, and the reliability of ACF connection does not decrease.
Another object of the present invention is to provide a semiconductor device provided with the semiconductor element according to the present invention.
[0014]
[Means for Solving the Problems]
The semiconductor device according to the present invention is a semiconductor device in which one or a plurality of bump electrodes are provided on one or a plurality of electrode portions formed by a multilayer metal wiring formed on a semiconductor substrate, wherein the bump electrode includes the electrode portion. After the metal body is formed, the surface of the metal body is treated so as to be rougher than when the metal body was formed.
[0015]
In this semiconductor device, one or a plurality of bump electrodes are provided on one or a plurality of electrode portions formed by a multilayer metal wiring formed on a semiconductor substrate. The surface of the body has been treated so that the texture is rougher than at the time of formation.
Thereby, at the time of bonding, the bite of the bump electrode with respect to the wiring pattern is improved, the problem of stress concentration does not occur, the base portion of the bump electrode is not damaged, and insulation failure between the bump electrodes is less likely to occur, It is possible to realize a semiconductor element in which a disconnection failure hardly occurs and the reliability of ACF connection does not decrease.
[0016]
A semiconductor device according to the present invention is a semiconductor device in which one or a plurality of bump electrodes are provided on one or a plurality of electrode portions formed by a multilayer metal wiring formed on a semiconductor substrate, and the surface of the bump electrode is textured. Is characterized by being subjected to a plasma etching treatment so as to be rough.
[0017]
In this semiconductor device, one or a plurality of bump electrodes are provided on one or a plurality of electrode portions formed of a multi-layered metal wiring formed on a semiconductor substrate, and the surface of the bump electrode is subjected to a plasma etching treatment so as to roughen the texture. Have been.
Thereby, at the time of bonding, the bite of the bump electrode with respect to the wiring pattern is improved, the problem of stress concentration does not occur, the base portion of the bump electrode is not damaged, and insulation failure between the bump electrodes is less likely to occur, It is possible to realize a semiconductor element in which a disconnection failure hardly occurs and the reliability of ACF connection does not decrease.
[0018]
In the semiconductor element according to the present invention, one or a plurality of bump electrodes are provided on one or a plurality of electrode portions formed of a multilayer metal wiring formed on a semiconductor substrate, and the top of the bump electrode is flattened. In the semiconductor device, the bump electrode forms a metal body on the electrode portion, and removes and flattens a top portion of the metal body by polishing, and makes the flattened surface rougher than when the top portion is removed. It is characterized by being processed so that
[0019]
In this semiconductor device, one or a plurality of bump electrodes are provided on one or a plurality of electrode portions formed of a multilayer metal wiring formed on a semiconductor substrate, and the top of the bump electrode is flattened. The bump electrode is formed by forming a metal body on the electrode part, removing the top of the metal body by polishing and flattening, and treating the flattened surface so that the texture becomes rougher than when the top is removed. It is.
As a result, at the time of bonding, the bite of the bump electrode with respect to the wiring pattern is improved, and the contact area is increased, so that the problem of stress concentration does not occur, and the base portion of the bump electrode is not damaged. It is possible to realize a semiconductor element in which insulation failure between the two hardly occurs, disconnection failure hardly occurs, and reliability of ACF connection does not decrease.
[0020]
In the semiconductor element according to the present invention, one or a plurality of bump electrodes are provided on one or a plurality of electrode portions formed of a multilayer metal wiring formed on a semiconductor substrate, and the top of the bump electrode is flattened. In the semiconductor device, the flattened surface of the bump electrode is plasma-etched so as to have a rough texture.
[0021]
In this semiconductor device, one or a plurality of bump electrodes are provided on one or a plurality of electrode portions formed of a multilayer metal wiring formed on a semiconductor substrate, and the top of the bump electrode is flattened. The flattened surface of the bump electrode is plasma-etched so that the texture becomes rough.
As a result, at the time of bonding, the bite of the bump electrode with respect to the wiring pattern is improved, and the contact area is increased, so that the problem of stress concentration does not occur, and the base portion of the bump electrode is not damaged. It is possible to realize a semiconductor element in which insulation failure between the two hardly occurs, disconnection failure hardly occurs, and reliability of ACF connection does not decrease.
[0022]
A semiconductor device according to the present invention is characterized in that the semiconductor element according to the present invention is mounted on a flexible film or a glass panel by a bump electrode of the semiconductor element.
[0023]
In this semiconductor device, since the semiconductor element according to the present invention is mounted on the flexible film or the glass panel by the bump electrode of the semiconductor element, the bonding of the bump electrode to the wiring pattern is improved at the time of bonding, and the stress concentration is reduced. To realize a semiconductor device which does not cause a defect, does not damage a base portion of a bump electrode, does not easily cause insulation failure between bump electrodes, does not easily cause disconnection failure, and does not reduce the reliability of ACF connection. Can be done.
[0024]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, the present invention will be described with reference to the drawings showing the embodiments.
Embodiment 1 FIG.
FIG. 1 is a longitudinal sectional view showing a configuration of a main part of a semiconductor element and a semiconductor device according to a first embodiment of the present invention. The semiconductor element shown in FIG. 1A has a multilayer wiring, and an interlayer insulating film 3 between a first metal wiring 2 and a second metal wiring 4 on a semiconductor substrate 1 An opening to the first-layer metal wiring 2 is provided.
[0025]
A surface protection film 5 is formed on the surfaces of the first-layer metal wiring 2 and the second-layer metal wiring 4, and the surface protection film 5 is provided with an opening to the second-layer metal wiring 4. I have.
The bump electrode 7 is formed by an electrolytic plating method on an electrode portion for obtaining electrical connection between the first-layer metal wiring 2 and the second-layer metal wiring 4. Note that a barrier metal layer 6 is provided between the bump electrode 7 and the metal wiring 4 and the surface protection film 5.
[0026]
The bump electrode 7 (metal body) is electrolytically plated on a concave portion of the electrode portion generated for obtaining electrical connection between the first-layer metal wiring 2 and the second-layer metal wiring 4 on the semiconductor substrate 1. Since it is formed by the method, a dent remains on the top surface of the head.
Therefore, after the bump electrode 7 (metal body) is formed, the top of the bump electrode 7 is flattened by polishing, and the surface of the bump electrode 7 is roughened by plasma etching, as shown in FIG. 7. Roughening the texture of the surface and forming extremely fine irregularities.
[0027]
As described above, the surface is flattened by mechanical polishing after the formation of the bump electrode 7 (metal body), and the surface of the bump electrode 7 is made to have very fine irregularities. In this case, the engagement performance between the bump electrode 7 and the inner lead wiring 8 of the film carrier tape 15 is improved. Therefore, the bonding load for obtaining a sufficient bonding strength can be reduced, and the load applied to the bump electrode 7 and the semiconductor element can be suppressed.
By bonding the bump electrodes 7 of the semiconductor element and the inner lead wires 8 of the film carrier tape 15 as described above, a semiconductor device in which the semiconductor element is mounted on the film carrier tape 15 is manufactured.
[0028]
Embodiment 2 FIG.
FIG. 2 is a longitudinal sectional view showing a main part configuration of a semiconductor element and a semiconductor device according to a second embodiment of the present invention. The bump electrode 7 of this semiconductor element (not shown) is joined to a wiring pattern 12 provided on a glass panel 11 via an anisotropic conductive paste 13 (ACF).
In the case of ACF (Anisotropic Conductive Film) bonding in COG (Chip On Glass) or the like, as shown in FIG. 2A, if the texture of the top surface of the bump electrode 7 is dense, the ACF due to the pressure applied during bonding is reduced. Particles 14 try to escape from the joint.
[0029]
Therefore, as shown in FIG. 2B, the texture of the top surface of the bump electrode 7 is roughened, and by providing extremely fine irregularities, the efficiency of capturing the ACF particles 14 at the joint increases. The reliability of the connection between the bump electrode 7 of the semiconductor element and the wiring pattern 12 on the glass panel 11 can be improved. In addition, even when the bump electrode 7 before polishing as shown in FIG. 3 is subjected to plasma etching, the efficiency of capturing ACF particles is increased, and the reliability of connection can be expected to be improved.
By joining the bump electrode 7 of the semiconductor element and the wiring pattern 12 on the glass panel 11 as described above, a semiconductor device in which the semiconductor element is mounted on the glass panel 11 is manufactured.
[0030]
According to the first and second embodiments, the biting of the wiring pattern on the flexible film with respect to the bump electrode formed on the semiconductor element is improved, and the bonding area is increased. As a result, the bonding strength can be simply improved and the bonding load can be reduced, so that the pressure applied to the bump electrode during bonding can be reduced. That is, the stress applied to the semiconductor element is reduced, and it is possible to prevent their destruction due to assembly. Further, since the stress applied to the bump electrode itself is also reduced, the amount of deformation particularly in the direction of the adjacent bump electrode caused by being crushed from the upper surface is reduced, and short-circuit failure between the bump electrodes can be reduced. This is expected to be further advanced in the future, and it is considered that the space between the bump electrodes can be narrowed sufficiently. Therefore, this may be one of the most important factors for setting the bonding conditions.
[0031]
【The invention's effect】
ADVANTAGE OF THE INVENTION According to the semiconductor element which concerns on this invention, the biting of a bump electrode with respect to a wiring pattern improves at the time of bonding, the problem of stress concentration does not arise, the damaging of the base part of a bump electrode does not occur, It is possible to realize a semiconductor device in which poor insulation failure does not easily occur, disconnection failure does not easily occur, and the reliability of ACF connection does not decrease.
[0032]
Further, according to the semiconductor element of the present invention, at the time of bonding, the bite of the bump electrode with respect to the wiring pattern is improved, and the contact area is increased. It is possible to realize a semiconductor element which does not cause damage, hardly causes insulation failure between bump electrodes, hardly causes disconnection failure, and does not reduce the reliability of ACF connection.
[0033]
Further, according to the semiconductor device of the present invention, at the time of bonding, the bite of the bump electrode with respect to the wiring pattern is improved, the problem of stress concentration does not occur, and the underlayer of the bump electrode is not damaged. It is possible to realize a semiconductor device in which insulation failure between electrodes is unlikely to occur, disconnection failure hardly occurs, and reliability of ACF connection does not decrease.
[Brief description of the drawings]
FIG. 1 is a longitudinal sectional view showing a main part configuration of an embodiment of a semiconductor element and a semiconductor device according to the present invention.
FIG. 2 is a longitudinal sectional view showing a configuration of a main part of an embodiment of a semiconductor element and a semiconductor device according to the present invention.
FIG. 3 is a longitudinal sectional view showing an example of a bump electrode of a conventional semiconductor element.
FIG. 4 is an explanatory view showing an example of a connection state between a bump electrode of a conventional semiconductor element and an inner lead wiring of a flexible film.
FIG. 5 is a longitudinal sectional view showing an example of a bump electrode of a conventional semiconductor element.
FIG. 6 is an explanatory view showing an example of a bump electrode of a conventional semiconductor element.
FIG. 7 is an explanatory view showing an example of a bump electrode of a conventional semiconductor element.
[Explanation of symbols]
Reference Signs List 1 semiconductor substrate 2 first-layer metal wiring 3 interlayer insulating film 4 second-layer metal wiring 5 surface protection film 6 barrier metal layer 7 bump electrode (metal body)
Reference Signs List 8 inner lead wiring 9 surface line of bump electrode 10 resist protective film 11 glass panel 12 wiring pattern 13 anisotropic conductive paste (ACF)
14 ACF particles 15 Film carrier tape (flexible film)

Claims (5)

In a semiconductor device in which one or a plurality of bump electrodes are provided on one or a plurality of electrode portions formed of a multilayer metal wiring formed on a semiconductor substrate,
The semiconductor device according to claim 1, wherein the bump electrode is formed by forming a metal body on the electrode portion and then treating the surface of the metal body so that the surface becomes rougher than when the metal body was formed. In a semiconductor device in which one or a plurality of bump electrodes are provided on one or a plurality of electrode portions formed of a multilayer metal wiring formed on a semiconductor substrate,
A semiconductor element, wherein a surface of the bump electrode is plasma-etched so as to roughen the texture. In a semiconductor element in which one or a plurality of bump electrodes are provided on one or a plurality of electrode portions formed of a multilayer metal wiring formed on a semiconductor substrate, and the top of the bump electrodes is flattened,
The bump electrode is formed by forming a metal body on the electrode portion, removing the top of the metal body by polishing, and flattening the flattened surface, and treating the flattened surface so that the texture becomes rougher than when the top is removed. A semiconductor element characterized by being done. In a semiconductor element in which one or a plurality of bump electrodes are provided on one or a plurality of electrode portions formed of a multilayer metal wiring formed on a semiconductor substrate, and the top of the bump electrodes is flattened,
A semiconductor element, wherein a flattened surface of the bump electrode is plasma-etched so as to roughen the texture. 5. A semiconductor device, wherein the semiconductor element according to claim 1 is mounted on a flexible film or a glass panel by a bump electrode of the semiconductor element.

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