JP2004327712A - Hollow-type semiconductor package - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a hollow-type semiconductor package improved in its resistance to moisture permeation in the hollow part. <P>SOLUTION: Resin 340 seals a connection part between a semiconductor chip 301 and a spacer 305, as well as the connecting part between the spacer 305 and a lid 330. One among silica gel, zeolite, high water absorption polymer of polyvinyl alcohol base resin and polyacrylate base, porous silica, active carbon and polyimide resin is added to the resin 340 as a moisture-absorbing material. Accordingly, improvement in airtightness in the hollow part, in which a passive element 310 or a sensor 310 is arranged, becomes possible and moisture, in an environmental gas in the hollow part or moisture adhered to the inner wall surface constituting and the semiconductor chip 301, the hollow part in the spacer 305 and the lid 330 becomes easily absorbable, whereby the resistance to moisture permeation in the hollow part can be made to improve. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a hollow semiconductor package having a hollow portion.
[0002]
[Prior art]
Optical devices such as sensors typified by CCDs (Charge Coupled Devices) and DMDs (Digital Micro Devices), and MEMS (Micro Electro Mechanical Systems) are cut out from semiconductor wafers and housed in ceramic or plastic packages. Hermetically sealed. These devices operate by receiving light from the outside and have a mechanical operating unit. For this reason, it is necessary that the semiconductor package that accommodates these devices has a hollow structure.
[0003]
In a conventional manufacturing process of a hollow semiconductor package, a Kovar ring which is a frame material is formed on an upper surface of a substrate. Further, a semiconductor chip cut from a semiconductor wafer is arranged in a region surrounded by the Kovar ring, and the semiconductor chip and the substrate are connected by bonding wires. Then, a lid, which is a lid that covers a region surrounded by the Kovar ring, is formed above the Kovar ring (for example, see Patent Literature 1).
[0004]
[Patent Document 1]
JP-A-2002-246489 (page 3-4, FIG. 3)
[0005]
[Problems to be solved by the invention]
However, it is not easy to ensure the airtightness of the hollow portion in which the semiconductor chip is arranged, and when moisture enters the hollow portion, the reliability of the semiconductor chip is shortened. For this reason, there is a demand for a hollow semiconductor package that improves the moisture resistance in the hollow portion and prolongs the reliability of the semiconductor chip.
[0006]
Accordingly, an object of the present invention is to provide a hollow semiconductor package with improved moisture permeability in a hollow portion.
[0007]
[Means for Solving the Problems]
In order to solve the above-described problem, the present invention provides a semiconductor package having a hollow portion, which includes a resin to which the hollow portion is added, to which a hygroscopic material is added.
[0008]
Further, according to the present invention, as described in claim 2, a substrate having a recess formed therein, a semiconductor chip disposed in the recess, and a lid member disposed on the recess and covering the semiconductor chip. A hollow semiconductor package including a resin to which a moisture absorbing material is added, which seals a joint between the substrate and the lid.
[0009]
Further, according to the present invention, as set forth in claim 3, a substrate, a frame member disposed on an upper surface of the substrate, a semiconductor chip disposed in a region surrounded by the frame member, and A lid member disposed at an upper portion and covering a region surrounded by the frame member, a joint portion between the substrate and the frame member, and a moisture absorbing material for sealing a joint portion between the frame member and the lid portion Is a hollow semiconductor package comprising:
[0010]
Further, according to the present invention, a semiconductor chip, a frame material disposed on an upper surface of the semiconductor chip, a semiconductor chip disposed in a region surrounded by the frame material, A lid member that is disposed on the top of the member and covers a region surrounded by the frame member, a joint portion between the semiconductor chip and the frame member, and a joint portion between the frame member and the lid member. And a resin to which a hygroscopic material is added.
[0011]
According to a fifth aspect of the present invention, in the hollow semiconductor package according to any one of the first to fourth aspects, the hygroscopic material is silica gel, zeolite, a polyvinyl alcohol-based resin, and a polyacrylate. It is any of a high water-absorbing polymer, porous silica, activated carbon, and a polyimide resin.
[0012]
According to the present invention, the hollow portion of the hollow semiconductor package is sealed with the resin. Specifically, the respective joints of the substrate, the semiconductor chip, the frame material, and the lid material are sealed with a resin, and furthermore, a hygroscopic material is added to the resin. For this reason, it is possible to improve the moisture permeability in the hollow portion where the semiconductor chip and the element are arranged, and to prolong the reliability of the semiconductor package.
[0013]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0014]
(First embodiment)
FIGS. 1 to 5 are views showing a manufacturing process of the hollow semiconductor package in the first embodiment. In a first step shown in FIG. 1, a substrate 100 having a concave portion is prepared, and in a second step shown in FIG. 2, the semiconductor chip 110 is arranged in the concave portion.
[0015]
In the third step shown in FIG. 3, the substrate 100 and the semiconductor chip 110 are electrically connected by the bonding wires 120. As a bonding method, for example, a nail head bonding method or an ultrasonic wedge bonding method is employed.
[0016]
In the nail head bonding method, a ball is formed by melting the tip of a gold bonding wire 120 passed through a capillary. Next, the ball is heated and pressed on an electrode made of aluminum or the like formed on the upper surface of the semiconductor chip 110. Further, the tip of the bonding wire 120 is guided to an electrode formed on the upper surface of the substrate 100 by a capillary, and is pressed against the electrode. Thereafter, the bonding wire 120 is cut by being clamped by the clamper and further pulled. On the other hand, in the ultrasonic wedge bonding method, a contact portion between the tip of the aluminum bonding wire 120 and an electrode such as aluminum formed on the upper surface of the semiconductor chip 110 is pressurized by a wedge tool, and further ultrasonic waves are applied. . As a result, the contact surface undergoes plastic deformation, and the tip of the bonding wire 120 and the electrode formed on the upper surface of the semiconductor chip 110 are joined. Further, the tips of the bonding wires 120 are guided to the electrodes formed on the upper surface of the substrate 100, and the contact portions between the tips of the bonding wires 120 and the electrodes formed on the upper surface of the substrate 100 are pressed by a wedge tool, Ultrasound is applied. As a result, the contact surface undergoes plastic deformation, and the tip of the bonding wire 120 and the electrode formed on the upper surface of the substrate 100 are joined. This ultrasonic wedge bonding method has an advantage that bonding at room temperature is possible.
[0017]
In a fourth step shown in FIG. 4, a lid 130 as a cover material for covering the semiconductor chip 110 is formed above the concave portion formed on the substrate 100. The lid 130 may be a transparent member, such as glass or plastic.
[0018]
In a fifth step shown in FIG. 5, a resin 140 for sealing a joint portion between the substrate 100 and the lid 130 is applied, and the resin 140 is cured, whereby a hollow semiconductor package is completed. The material of the resin 140 is, for example, an epoxy resin, a curing agent, and a filler. The epoxy resin has a coefficient of linear expansion of about 10 ⁻⁴ to 10 ⁻⁵ , and for example, a cresol / novolak resin is used. As the curing agent, for example, a phenol-novolak resin is used. For example, silica is employed as the filler. The reason for using the filler is to reduce the cost, decrease the linear expansion coefficient, and improve the resin strength.
[0019]
Further, in the present embodiment, a hygroscopic material is further added to the resin 140. As the hygroscopic material, any one of silica gel, zeolite, polyvinyl alcohol-based resin and polyacrylate-based superabsorbent polymer, porous silica, activated carbon, and polyimide resin is employed. Usually, a resin having a low moisture absorption is used as a resin used as a sealing material. However, in this embodiment, a resin 140 to which a hygroscopic material is added and whose moisture absorption is improved is used. When such a resin 140 is used, the airtightness of the hollow portion surrounded by the substrate 100 and the lid 130, in other words, the hollow portion in which the semiconductor chip 110 is arranged can be improved. In addition, since the resin 140 is added with a hygroscopic material, the resin 140 is adsorbed on the moisture in the atmospheric gas in the hollow portion where the semiconductor chip 110 is disposed, and on the inner wall surface of the substrate 100 and the lid 130 constituting the hollow portion. Moisture is easily absorbed, and the moisture resistance in the hollow portion can be improved. Therefore, the reliability of the hollow semiconductor package can be prolonged.
[0020]
(Second embodiment)
6 to 10 are views showing a manufacturing process of the hollow semiconductor package in the second embodiment. In the first step shown in FIG. 6, a spacer 205 as a frame material is disposed on the upper surface of the substrate 200. Further, in the second step shown in FIG. 7, the semiconductor chip 210 is arranged in a region surrounded by the spacer 205.
[0021]
In the third step shown in FIG. 8, the substrate 200 and the semiconductor chip 210 are electrically connected by the bonding wires 220. As in the first embodiment, for example, a nail head bonding method or an ultrasonic wedge bonding method is employed as the bonding method.
[0022]
In the fourth step shown in FIG. 9, a lid 230 as a cover material for covering the semiconductor chip 210 is formed on the spacer 205. The lid 230 only needs to be a transparent member, and glass, plastic, or the like is used.
[0023]
In a tenth step shown in FIG. 10, a resin 240 for sealing the joint between the substrate 200 and the spacer 205 and for sealing the joint between the spacer 205 and the lid 230 is applied, and the resin 240 is cured. Thereby, the hollow semiconductor package is completed. The material of the resin 240 is, for example, an epoxy resin, a curing agent, and a filler, as in the first embodiment.
[0024]
In this embodiment, any one of silica gel, zeolite, polyvinyl alcohol-based resin and polyacrylate-based super-absorbent polymer, porous silica, activated carbon, and polyimide resin is added to the resin 240 as a hygroscopic material. When the resin 240 to which such a hygroscopic material is added is used, it is possible to improve the airtightness of the hollow portion where the semiconductor chip 110 is arranged, as in the first embodiment, and to improve the airtightness. In the atmosphere gas and the water adsorbed on the inner wall surface of the substrate 200, the spacer 205, and the lid 230 constituting the hollow portion can be easily absorbed, and the moisture permeability in the hollow portion can be improved. Therefore, the reliability of the hollow semiconductor package can be prolonged.
[0025]
(Third embodiment)
FIG. 11 to FIG. 15 are views showing a manufacturing process of the hollow semiconductor package in the third embodiment. In this embodiment, a so-called wafer level package (WLP) is manufactured.
[0026]
In the first step shown in FIG. 11, a passive element 310 such as a transistor, a sensor 310 such as a CCD or DMD, or a MEMS 310 is formed on the upper surface of a semiconductor wafer 300. Further, in the second step shown in FIG. 12, a spacer 305 as a frame material is arranged on the upper surface of the semiconductor wafer 300 so as to surround the above-described passive element 310, sensor 310, or MEMS 310.
[0027]
In the third step shown in FIG. 13, a lid 330 as a cover material for covering the passive element 310, the sensor 310, or the MEMS 310 is formed on the spacer 305. The lid 330 may be a transparent member, such as glass or plastic.
[0028]
In the fourth step shown in FIG. 14, a resin 340 for sealing the joint between the semiconductor wafer 300 and the spacer 305 and for sealing the joint between the spacer 305 and the lid 330 is applied, and the resin 240 is cured. . The material of the resin 340 is, for example, an epoxy resin, a curing agent, and a filler, as in the first embodiment.
[0029]
Further, in this embodiment, any one of silica gel, zeolite, polyvinyl alcohol-based resin and polyacrylate-based superabsorbent polymer, porous silica, activated carbon, and polyimide resin is added to the resin 340 as a moisture absorbing material. When the resin 340 to which such a moisture absorbing material is added is used, it is possible to improve the airtightness of the hollow portion where the passive element 310, the sensor 310, or the MEMS 310 is disposed, as in the first embodiment. At the same time, moisture in the atmosphere gas in the hollow portion and moisture adsorbed on the inner wall surfaces of the semiconductor wafer 300, the spacer 305, and the lid 330 constituting the hollow portion are easily absorbed, and the moisture permeability in the hollow portion is improved. Can be done. Therefore, the reliability of the hollow semiconductor package can be prolonged.
[0030]
In a fifth step shown in FIG. 15, the semiconductor wafer 300 is cut into individual pieces (semiconductor chips 301) to complete a hollow semiconductor package.
[0031]
Next, the improvement effect of the present invention will be described. FIG. 16 is a diagram showing the transition of the water absorption of each resin. In the same figure, Sample 1 (SPL-1) is an epoxy resin to which porous silica is added as a moisture absorbing material in the present invention, and Sample 2 (SPL-2) is a method of absorbing water by another method without adding a moisture absorbing material. Sample 3 (SPL-3) is a conventional epoxy resin. FIG. 16 shows changes in the water absorption of each epoxy resin under the conditions of a temperature of 85 ° C. and a humidity of 85%.
[0032]
As is clear from FIG. 16, the epoxy resin of Sample 1 to which porous silica is added as a moisture absorbing material in the present invention has a higher water absorption than the epoxy resins of Samples 2 and 3.
[0033]
On the other hand, FIG. 17 is a diagram showing the transition of the apparent dew point temperature when the resin to which the moisture absorbent is added in the present invention is used. FIG. 17 shows a case where the hollow semiconductor package according to the present invention is arranged in an environment of a temperature of 60 ° C. and a humidity of 90%, and when the temperature of the lid of the hollow semiconductor package is changed at each elapsed time, the lid becomes It is the result which plotted cloudy temperature as apparent dew point temperature.
[0034]
As apparent from FIG. 17, as the time elapses, the apparent dew point temperature increases. In other words, the lid becomes less cloudy as the time elapses. This is probably because the resin absorbed moisture in the hollow portion where the semiconductor chip and the like were arranged.
[0035]
In the above-described embodiment, the hollow semiconductor package has the configuration in the first to third examples. However, the present invention can be applied to a hollow semiconductor package having another configuration. .
[0036]
【The invention's effect】
ADVANTAGE OF THE INVENTION According to this invention, the moisture permeability of the hollow part in a hollow-type semiconductor package can be improved, and long-term reliability can be realized.
[Brief description of the drawings]
FIG. 1 is a view showing a first manufacturing process of a hollow semiconductor package in a first embodiment.
FIG. 2 is a view showing a second manufacturing process of the hollow semiconductor package in the first embodiment.
FIG. 3 is a view showing a third manufacturing process of the hollow semiconductor package in the first embodiment.
FIG. 4 is a view showing a fourth manufacturing step of the hollow semiconductor package in the first embodiment.
FIG. 5 is a diagram showing a fifth manufacturing process of the hollow semiconductor package in the first embodiment.
FIG. 6 is a diagram showing a first manufacturing process of the hollow semiconductor package in the second embodiment.
FIG. 7 is a view showing a second manufacturing process of the hollow semiconductor package in the second embodiment.
FIG. 8 is a view showing a third manufacturing step of the hollow semiconductor package in the second embodiment.
FIG. 9 is a diagram showing a fourth manufacturing step of the hollow semiconductor package in the second embodiment.
FIG. 10 is a view showing a fifth manufacturing step of the hollow semiconductor package in the second embodiment.
FIG. 11 is a diagram showing a first manufacturing step of the hollow semiconductor package in the third embodiment.
FIG. 12 is a view showing a second manufacturing step of the hollow semiconductor package in the third embodiment.
FIG. 13 is a view showing a third manufacturing step of the hollow semiconductor package in the third embodiment.
FIG. 14 is a view showing a fourth manufacturing step of the hollow semiconductor package in the third embodiment.
FIG. 15 is a view showing a fifth manufacturing step of the hollow semiconductor package in the third embodiment.
FIG. 16 is a diagram showing a change in water absorption of a resin.
FIG. 17 is a diagram showing changes in apparent dew point temperature.
[Explanation of symbols]
100, 200 Substrate 110, 210, 301 Semiconductor chip 120, 220, 320 Bonding wire 130, 230, 330 Lid 140, 240, 340 Resin 205, 305 Spacer 300 Semiconductor wafer 310 Passive element, sensor or MEMS

Claims (5)

In a hollow semiconductor package having a hollow portion,
A hollow semiconductor package including a resin added with a hygroscopic material, which seals the hollow portion. A substrate having a recess formed thereon,
A semiconductor chip disposed in the recess,
A cover member that is disposed above the recess and covers the semiconductor chip;
A resin to which a hygroscopic material is added, which seals a joint portion between the substrate and the lid,
A hollow semiconductor package comprising: Board and
A frame material arranged on the upper surface of the substrate,
A semiconductor chip arranged in a region surrounded by the frame material,
A lid member disposed on the top of the frame member and covering an area surrounded by the frame member,
A joint with the substrate and the frame member, and a resin to which a joint between the frame member and the lid is sealed, to which a hygroscopic material is added,
A hollow semiconductor package comprising: A semiconductor chip,
A frame material arranged on the upper surface of the semiconductor chip,
A semiconductor chip arranged in a region surrounded by the frame material,
A lid member disposed on the top of the frame member and covering an area surrounded by the frame member,
A joining portion between the semiconductor chip and the frame material, and a resin added with a hygroscopic material, for sealing a joining portion between the frame material and the lid portion;
A hollow semiconductor package comprising: The hollow semiconductor package according to any one of claims 1 to 4,
The hollow semiconductor package, wherein the hygroscopic material is any one of silica gel, zeolite, polyvinyl alcohol-based resin and polyacrylate-based superabsorbent polymer, porous silica, activated carbon, and polyimide resin.

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