JP2004325442A - Radiation detector and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a high-sensitivity and high-sharpness radiation detector with which uniform photo-transformation efficiency can be obtained by preventing a phosphor layer from being peeled off due to its poor adhesion and forming a uniform and a highly accurate columnar phosphor layer by vapor deposition. <P>SOLUTION: This radiation detector is equipped with a sensor panel 100 equipped with two-dimensionally disposed photoelectric transducers, a phosphor backing layer 111 disposed on the sensor panel 100 and having an atmospherically plasma-treated surface, and the phosphor layer 112 formed on the backing layer 111. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a radiation detection device that detects radiation used as an electrical signal in medical diagnostic equipment, nondestructive inspection equipment, and the like, and a method for manufacturing the same. In this specification, an electromagnetic wave such as an X-ray, an α-ray, a β-ray, and a γ-ray is described as being included in the radiation.

  Conventionally, an X-ray film system having a fluorescent screen having an X-ray phosphor layer provided therein and a double-side coating agent has been generally used for X-ray photography. However, recently, the image characteristics of a digital radiation detection device having an X-ray phosphor layer and a two-dimensional photodetector have been good, and since the data is digital data, it has been taken into a networked computer system. Since there is an advantage of sharing digital radiation detectors, digital radiation detectors have been actively researched and developed, and various patent applications have been filed.

Among these digital radiation detectors, as disclosed in Patent Document 1 or Patent Document 2 below, a plurality of photosensors and electric elements such as thin film transistors (TFTs) are two-dimensionally disclosed as a highly sensitive and sharp device. 2. Description of the Related Art There is known a radiation detection apparatus in which a phosphor layer for converting radiation into light that can be detected by a photoelectric conversion element is formed on a photodetector including an arranged photoelectric conversion element unit. In this radiation detection device, a protective film for protecting the rigidity of the photoelectric conversion element is provided on the two-dimensional photodetector. Further, a moisture-resistant protective layer is formed on the phosphor layer and the reflective layer and on the reflective layer so as to cover the entire phosphor layer, and furthermore, an end of the protective layer is formed to prevent intrusion of moisture from an end of the protective layer. A protective layer coating resin for coating is provided. All of these are intended to prevent the ingress of moisture from the outside and improve the durability of the radiation detection device.
JP-A-2000-284053 JP-A-2000-9845 Matsushita Electric Works, April. 2000 p. 13-17

However, the thermal expansion coefficient of the material used for the support substrate, the reflective layer, the protective layer, and the insulating heat-resistant layer used for the radiation detection scintillator panel is (1 to 10 × 10 ⁻⁶ ) / ° C. for amorphous carbon or glass. , Al and the like are (15 to 25 × 10 ⁻⁶ ) / ° C., and a general resin is about (1 to 5 × 10 ⁻⁵ ) / ° C., and the displacement difference generated when each layer is resistant to heat, humidity, and durability is large. Therefore, in order to improve the durability of the radiation detection device, it is important not only to enhance the moisture-proof effect, but also to improve the adhesion between the constituent layers so that the constituent layers can withstand displacement caused by the influence of the outside world. is there. Heretofore, in the above-described radiation apparatus, the following problems may occur in the durability evaluation.

  1. In the heat and humidity resistance test, the phosphor layer was broken or peeled off from the phosphor layer due to insufficient adhesion between the phosphor layer and the protective film provided on the photoelectric conversion element as the phosphor underlayer. There was a case.

  2. In order to improve the adhesion between the phosphor layer and the underlayer, a corona discharge treatment, which is a general surface modification treatment method, was applied to the underlayer provided on the photoelectric conversion element of the sensor panel. Due to the influence of the processing, a problem such as a change in current at the time of TFT-off of the photoelectric conversion element or disconnection of the wiring of the photoelectric conversion element occurred, and the surface modification could not be performed without damage to the sensor panel. .

  3. A reduced pressure plasma treatment method was performed as the surface treatment method, and the same result was obtained. In addition, since the low-pressure plasma treatment is a treatment under a high vacuum, there are problems that the treatment takes a long time and the treatment process becomes complicated.

  An object of the present invention is to prevent peeling due to poor adhesion of a phosphor layer, and to form a uniform and highly accurate columnar phosphor layer by vapor deposition, and to obtain a highly sensitive and sharp sharp light conversion efficiency. It is to provide a radiation detection device.

  In the method for manufacturing a radiation detection device according to the present invention, a phosphor base layer is disposed on a sensor panel having two-dimensionally arranged photoelectric conversion elements, and the surface of the base layer is subjected to an atmospheric pressure plasma treatment. And a phosphor layer is formed thereon. Further, in the method for manufacturing a radiation detection device according to the present invention, a scintillator panel is manufactured by performing a plasma treatment on the surface of a phosphor base layer disposed on a support substrate and forming a phosphor layer on the base layer. A sensor panel having two-dimensionally arranged photoelectric conversion elements and the scintillator panel are bonded to each other.

  In such a radiation detection device, a sensor panel having two-dimensionally arranged photoelectric conversion elements, a phosphor base layer having a surface subjected to atmospheric pressure plasma treatment and disposed on the sensor panel, and It has a phosphor layer formed in contact with the formation.

  In addition, by providing a moisture-resistant protective layer between the phosphor layer and the reflective layer, the function of the reflective layer is prevented from being attenuated by the components and moisture contained in the phosphor layer, and the entire phosphor layer is formed on the reflective layer. Forming a protective layer so as to cover the phosphor and the reflective film from external moisture, and providing a protective coating resin for covering the protective layer end in order to prevent moisture from entering from the protective layer end. Is preferred.

  Further, in such a radiation detection device, a sensor panel provided with a two-dimensionally arranged photoelectric conversion element, and a phosphor layer disposed on a support substrate and having a phosphor base layer having a surface subjected to atmospheric pressure plasma treatment, And a scintillator panel having an adhesive layer.

  A method of manufacturing a scintillator panel according to the present invention is characterized in that the surface of a phosphor base layer disposed on a support substrate is subjected to atmospheric pressure plasma treatment to form a phosphor layer on the base layer.

  In such a scintillator panel, a phosphor layer is provided on a phosphor base layer having a surface subjected to atmospheric pressure plasma treatment and disposed on a support substrate.

In the method for manufacturing a scintillator panel and a radiation detection device according to the present invention, the surface of the phosphor underlayer is subjected to the atmospheric pressure plasma treatment, and the surface energy after the treatment is 45 × 10 ⁻³ J / m ² or more. A columnar phosphor is formed on the underlying layer by an evaporation method.

  The present inventors have conducted intensive studies to solve the above-mentioned problems. By subjecting the surface of the phosphor base layer to atmospheric pressure plasma treatment, there is no damage to the sensor panel, and the adhesion between the base material and the phosphor that grows with a columnar crystal structure on the base layer by vapor deposition is improved. I found out.

  As the phosphor used in the radiation detection device, a columnar phosphor or the like formed by a vapor deposition method is used. At the time of vapor deposition, the phosphor emitted as a gas from the vapor deposition source comes into contact with the surface of the support substrate and changes its liquid state. As a solid, it is fixed on the supporting substrate. In a phosphor grown with a columnar crystal structure, the crystal is not stable in the vicinity of the fixing surface and the columnar diameter of the crystal becomes smaller, but as the growth proceeds, the columnar shape of the crystal tends to become larger and the columnar diameter of the crystal becomes larger. . Since a crystal is grown directly on the sensor panel to form the phosphor, if the columnar diameter on the sensor panel side is small, light loss from the upper part of the phosphor is large and the light output of the radiation detection device is reduced. However, when plasma treatment is performed on the phosphor underlayer of the sensor panel, the wetting property of the fixing surface is increased, and the crystal spreads to the fixing surface, and the columnar diameter of the crystal formed near the sensor panel is larger than when plasma treatment is not performed. It was also found that there was a tendency to become thicker. For this reason, it was found that a small columnar crystal region which deteriorated the light output near the sensor panel in the phosphor layer was reduced, and a high light output was obtained.

  According to the present invention, the following effects can be obtained.

  (1) It is possible to realize a scintillator panel and a radiation detection device with high uniformity of the shape of the formed phosphor layer and without sensitivity unevenness.

  (2) When configured as a scintillator panel and a radiation detection device, peeling or breakage of the phosphor does not occur, and in particular, the temperature and humidity resistance is improved.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

[Embodiment 1]
1A, 1B, and 1C are cross-sectional views illustrating a method for manufacturing a radiation detection device according to a first embodiment of the present invention.

  1A to 1C, reference numeral 101 denotes a glass substrate as an insulating substrate; 102, a photoelectric conversion element unit including a photosensor and TFT using amorphous silicon; 103, a wiring unit; 104, an electrode extraction unit; Numeral denotes a passivation film made of silicon nitride or the like which is arranged to cover the photoelectric conversion element unit 102, and 111 denotes a phosphor base layer which also serves as a rigid protection layer of the photoelectric conversion element formed of a resin film or the like. These 101 to 105 constitute the sensor panel 100. Each element of the photoelectric conversion element unit 102 is two-dimensionally arranged, and each element corresponds to a pixel. 105 can be called a first protective layer, and 111 can be called a second protective layer. The surface of the phosphor base layer 111 on the sensor panel 100 is modified by atmospheric pressure plasma processing. As described in Non-Patent Document 1, the atmospheric pressure plasma processing apparatus converts the argon and oxygen introduced into the apparatus into a plasma gas, and injects the gas to the surface to be processed by the nozzle 121 to thereby form a target. This is for cleaning and modifying the treated surface. In the embodiment in this specification, "Aiplasma" manufactured by Matsushita Electric Works, Ltd. was used as the atmospheric pressure plasma processing apparatus.

As the processing condition, it is necessary to set a condition that does not damage the photoelectric conversion element and its wiring part, so that it is necessary to set an appropriate condition according to the characteristics of the sensor panel. The operation speed of the nozzle 121 is preferably 10 to 150 mm / sec, particularly preferably 30 to 120 mm / sec. The surface energy of 45 × 10 ⁻³ J / m ² or more was obtained on the underlayer surface by the treatment with the above parameters. The measurement of the surface energy was obtained by "wetting test method JIS K6768". If the operation speed of the nozzle 121 is 10 mm / sec or less, noise in the sensor panel may increase or defects may occur due to damage during processing, which is not preferable. When the operation speed of the nozzle 121 is 30 mm / sec or less, irregularities are formed on the underlayer 111 by the atmospheric pressure plasma treatment, and a defect occurs when the phosphor layer 112 described later is formed on the underlayer 111. Cause. Further, if the operation speed of the nozzle 121 is set to 120 mm / sec or more, sufficient surface energy cannot be obtained on the underlayer 111. In order to improve the adhesion between the phosphor layer and the phosphor base layer after the respective constituent layers are laminated, it is particularly important to treat the end portions of the phosphor base layer that receives strong peeling stress. The adhesion strength between the phosphor layer and the phosphor base layer for significantly reducing defects due to peeling can be obtained. In particular, the end portion of the phosphor layer formed by vapor deposition is thin and unstable, so that the end portion of the phosphor layer is easily peeled off due to the stress of each of the constituent layers at the time of durability. It is desirable. In particular, in the case of the atmospheric pressure plasma treatment, the treatment can be performed by dividing the region. For example, only the phosphor base layer at the end of the phosphor layer is processed, or only the phosphor base layer at the end of the phosphor layer is processed. By changing the processing conditions, it is desirable to be able to select the processing for each region, such as increasing the adhesion of the end portions of the phosphor layer to the phosphor base layer. Also, since the surface treatment of the phosphor base layer stabilizes the spread of the phosphor layer to the adherend at the time of fixing, it is possible to obtain a columnar crystal phosphor having a larger columnar diameter than when no treatment is performed near the sensor panel, Since the light output is improved, it is desirable to perform a base treatment over the entire phosphor base layer region on which the phosphor layer is deposited (see FIG. 1A).

  As shown in FIG. 1B, a phosphor layer 112 made of a columnar crystallized phosphor (eg, CsI: Tl, thallium-activated cesium iodide) made of an alkali halide is formed on the treated underlayer 111. It is formed by vapor deposition. Further, as shown in FIG. 1C, the entire top surface and side surfaces of the deposited phosphor layer 112 and the phosphor base layer 111 around the region where the phosphor layer 112 is formed are covered with a moisture-resistant protective layer 113. Then, the reflective layer 114 is formed. By providing the moisture-resistant protective layer 113 between the phosphor layer 112 and the reflective layer 114, the function of the reflective layer 114 can be prevented from being attenuated by components or moisture contained in the phosphor layer 112. A protective layer 115 is provided so as to be in contact with the reflective layer 114 of the radiation detection device thus configured and to cover the entire surface, and an end of the protective layer is covered with a sealing resin 116. With these, it is possible to prevent the reflection layer 114 and the phosphor layer 112 from being deteriorated by external moisture or the like.

  Further, for the purpose of improving the moisture resistance, for example, a laminate of PET / Al foil / adhesive may be attached on the protective layer 115 to further improve the moisture resistance.

  In the above embodiment, the present invention is most effective when the columnar crystal phosphor layer whose crystal state control affects the light output of the phosphor is formed by vapor deposition.

As the passivation film 105 of the sensor panel used in the present invention, in addition to SiN, TiO ₂ , LiF, Al ₂ O ₃ , MgO, etc., polyphenylene sulfide resin, fluorine resin, polyether ether ketone resin, liquid crystal polymer, polyether Examples thereof include a nitrile resin, a polysulfone resin, a polyether sulfone resin, a polyarylate resin, a polyamideimide resin, a polyetherimide resin, a polyimide resin, an epoxy resin, and a silicone resin. In particular, the passivation film 105 desirably has a high transmittance at the wavelength of the light emitted by the phosphor since the light converted by the phosphor at the time of irradiation with the radiation passes through the passivation film 105.

  As the underlayer 111 used in the present invention, any material can be used as long as it can withstand a heat process (200 ° C. or higher) in the phosphor layer 112 forming step using the columnar phosphor. Examples thereof include an etherimide resin, a polyimide resin, a polyurea resin, a benzocyclobutene resin, a high heat-resistant acrylic resin, an epoxy resin, and a silicone resin.

  As a material of the reflection layer 114, a metal having a high reflectance such as Al, Ag, Cr, Cu, Ni, Ti, Mg, Rh, Pt, and Au is desirable.

  The moisture-resistant protective layer 113 covering the entire underlayer 111 and the phosphor layer 112 is provided for the purpose of moisture-proof protection and may be made of any material that meets the purpose. It is desirable to use the disclosed organic film formed by a CVD method such as polyparaxylylene having high moisture resistance. When the adhesion with the underlayer 111 is not good, the moisture-resistant protective layer 113 made of an organic film formed by a CVD method such as polyparaxylylene can be used in the atmosphere from the interface between the moisture-resistant protective layer 113 and the underlayer 111. There is a possibility that moisture may enter and deliquesce CsI of the columnar crystal. However, when the organic film is used as the moisture-resistant protective film 113 that covers CsI on the surface of the underlayer 111 that has been subjected to the atmospheric pressure plasma treatment as described above and that is in contact with the underlayer in a region around the CsI formation region, The adhesion between the moisture-resistant protective layer 113 and the underlayer 111 is improved, and the effect of improving the moisture resistance at the interface between the underlayer 111 and the moisture-resistant protective layer 113 is obtained.

  As the phosphor, an alkali halide: activator is suitably used, and in addition to CsI: Tl, CsI: Na, NaI: Tl, LiI: Eu, KI: Tl, or the like can be used.

  As the two-dimensional photodetector, a case has been described in which a photoelectric conversion element portion including a photosensor using amorphous silicon and a TFT is formed on a glass substrate, but an imaging element in which a CCD, a CMOS sensor, and the like are two-dimensionally arranged is used. A radiation detection device can be formed by disposing an underlayer and a phosphor layer on the formed semiconductor single crystal substrate.

[Embodiment 2]
The present invention provides a scintillator panel in which a surface of a phosphor base layer disposed on a support substrate is subjected to atmospheric pressure plasma treatment, and a phosphor layer is formed in contact with the base layer to form a scintillator panel. The effect can also be obtained by bonding a sensor panel provided with a photoelectric conversion element arranged in the above. As described above, when the phosphor layer is formed on the support substrate, as in the case where the underlayer on the sensor panel is processed as described above, the adhesion to the phosphor layer is improved, and the phosphor layer is formed. The control of the columnar diameter is possible.

  2 and 3 are diagrams illustrating a method for manufacturing a radiation detection device according to a second embodiment of the present invention.

  Reference numeral 101 denotes a glass substrate as an insulating substrate; 102, a photoelectric conversion element unit including a photosensor and TFT using amorphous silicon; 103, a wiring unit; 104, an electrode extraction unit; and 105, a passivation film made of silicon nitride or the like. These 101 to 105 constitute the sensor panel 100 (see FIG. 2A).

  On the other hand, a protective layer 118, a reflective layer 114, and a phosphor base layer 111 are sequentially stacked on a support substrate 117, and the surface of the base layer 111 is subjected to base layer processing by the same atmospheric pressure plasma processing as in the first embodiment (FIG. 2 (b)). A phosphor layer 112 made of a columnar phosphor is formed on the treated phosphor base layer 111, and the phosphor layer 112 is covered with a moisture-resistant protective layer 113. These constitute the scintillator panel 110 (see FIG. 2C).

  The scintillator panel 110 is attached to the sensor panel 100. 119 is an adhesive layer, and 116 is a sealing resin (see FIG. 3).

  In such a bonded radiation detecting apparatus, as the support substrate 117, a material generally used as a support substrate of a phosphor panel for a radiation detection apparatus, Al, glass fused quartz, an amorphous carbon substrate, and an amorphous carbon-containing substrate are used. And a heat-resistant resin substrate such as a polyimide resin and a polybenzimidazole resin. Amorphous carbon is a material very suitable for a support substrate because it has a smaller amount of X-ray absorption than glass or Al and can transmit more X-rays to the phosphor layer.

[Embodiment 3]
FIG. 4 is a diagram showing an example of a radiation diagnostic system using the radiation detection device according to the first or second embodiment of the present invention.

  X-rays 6060 generated by the X-ray tube 6050 pass through the chest 6062 of the patient or subject 6061 and enter the radiation detection device 6040 as shown in FIG. The incident X-ray contains information on the inside of the body of the patient 6061. The scintillator (phosphor layer) emits light in response to the incidence of X-rays, and this is photoelectrically converted by the photoelectric conversion element of the sensor panel to obtain electrical information. This information is converted into digital data, subjected to image processing by an image processor 6070 serving as a signal processing means, and can be observed on a display 6080 serving as a display means of a control room.

  Further, this information can be transferred to a remote place by a transmission processing means such as a telephone line 6090, and can be displayed on a display 6081 as a display means such as a doctor room at another place, or can be stored in a recording means such as an optical disk. It is also possible for a doctor at a remote location to make a diagnosis. Further, it can be recorded on a film 6110 by a film processor 6100 as recording means.

  As described above, the present invention can be applied to medical X-ray sensors, but is also effective when applied to other uses such as nondestructive inspection.

  Next, the radiation detection apparatus of the present invention will be described in detail based on embodiments.

As shown in FIG. 1A, a photoelectric conversion element portion 102 composed of a photosensor and a TFT and a wiring portion 103 are formed on a semiconductor thin film composed of amorphous silicon on a glass substrate 101, and are composed of SiN _X thereon. The sensor panel 100 was manufactured by forming the passivation film 105. Further, a phosphor base layer (second protective layer) 111 was formed on the passivation film 105.

  Table 1 shows the processing conditions for processing the region of the phosphor base layer 111 on the sensor panel by the atmospheric pressure plasma processing, and a radiation detecting apparatus was prepared.

  Next, as shown in FIGS. 1B and 1C, a columnar-crystallized phosphor layer made of alkali halide (phosphor layer 112) is formed on the surface of the underlayer 111 by vapor deposition. A moisture-resistant protective layer 113 made entirely of paraxylylene resin was formed by a CVD method. Further, an Al film was formed as a reflective layer 114 by an evaporation method, and the whole was again covered with a protective layer 115 made of paraxylylene resin. Further, a sealing resin 116 was formed so as to cover the end of the protective layer, and a radiation detection device was obtained.

  In the configurations as in these examples, the phosphor layer 112 can be formed with high accuracy, and a highly uniform radiation detection device was obtained.

  Further, the radiation detection device manufactured as described above was stored in a 60 ° C., 90% temperature / humidity test tank for 1000 hours. Table 1 shows the results. Examples 1 to 3 and Comparative Examples 1 to 3 were examples in which the test was performed under different conditions of the atmospheric pressure plasma treatment, Example 4 was a benzocyclobutene resin for the phosphor underlayer 111, and Example 5 was a phosphor underlayer. This is an example in which a test was performed by changing 111 to an acrylic resin.

１．蛍光体剥がれ
耐久性６０℃、９０％ １０００時間放置後に、放射線検出装置にＸ線を照射して得られた画像から、蛍光体剥がれや破損による欠陥画像があるかないかを観察した。

1. Phosphor peeling Durability After leaving for 90 hours at 90% for 90 hours, images obtained by irradiating the radiation detector with X-rays were examined to see if there were any defect images due to phosphor peeling or breakage.

2. Light output This is a value obtained when an X-ray with a tube voltage of 100 kV was taken through a water phantom having a thickness of 100 mm, and the sensitivity was set to 1 in Comparative Example 1.

3. Sensor Panel Defects A panel inspection was performed after the plasma treatment to evaluate whether or not defects such as disconnection and noise unevenness occurred on the panel.

Sectional drawing which shows the manufacturing method of the radiation detection apparatus of Embodiment 1 by this invention. Sectional drawing which shows the manufacturing method of the radiation detection apparatus of Embodiment 2 by this invention. Sectional drawing which shows the manufacturing method of the radiation detection apparatus of Embodiment 2 by this invention. The figure which showed the example of the radiation diagnostic system using the radiation detection apparatus of this invention.

Explanation of reference numerals

REFERENCE SIGNS LIST 100 sensor panel 101 glass substrate 102 photoelectric conversion element section 103 wiring section 104 electrode take-out section 105 passivation film 110 scintillator panel 111 fluorescent underlayer 112 fluorescent layer 113 moisture-resistant protective layer 114 reflective layer 115 protective layer 116 sealing resin 117 support substrate 118 Protective layer 119 Adhesive layer 121 Atmospheric pressure plasma processing device nozzle

Claims (21)

A method for manufacturing a radiation detection device having a phosphor layer that converts radiation into light that can be detected by the photoelectric conversion element, on a sensor panel including a two-dimensionally arranged photoelectric conversion element,
A step of subjecting the surface of the phosphor base layer disposed on the sensor panel to an atmospheric pressure plasma treatment,
Forming the phosphor layer on the surface of the phosphor base layer.   The method according to claim 1, further comprising a step of covering the phosphor layer with a moisture-resistant protective layer. The method according to claim 1, wherein, in the step of performing the atmospheric pressure plasma treatment, the surface energy of the phosphor base layer is set to 45 × 10 ⁻³ J / m ² or more.   2. The method according to claim 1, wherein the phosphor base layer is made of a high heat resistant resin layer.   2. The method according to claim 1, wherein the phosphor base layer is made of a polyimide resin layer.   The method according to claim 1, wherein in the step of forming the phosphor layer, the phosphor layer is formed on the phosphor base layer by an evaporation method.   2. The method according to claim 1, wherein in the step of forming the phosphor layer, the phosphor layer is formed on the phosphor base layer by depositing an alkali halide: activator. 3. .   The method according to claim 2, wherein the moisture-resistant protective layer is formed of an organic film. A method for manufacturing a scintillator panel having a phosphor layer that converts radiation into light detectable by a photoelectric conversion element on a support substrate,
A step of subjecting the surface of the phosphor base layer disposed on the support substrate to atmospheric pressure plasma processing,
Forming the phosphor layer on the surface of the phosphor base layer.   The method for manufacturing a scintillator panel according to claim 9, further comprising a step of covering the phosphor layer with a moisture-resistant protective layer. The method of manufacturing a scintillator panel according to claim 9, wherein in the step of performing the atmospheric pressure plasma treatment, the surface energy of the phosphor base layer is set to 45 × 10 ⁻³ J / m ² or more.   The method for manufacturing a scintillator panel according to claim 9, wherein the phosphor base layer is formed of a high heat resistant resin layer.   The method for manufacturing a scintillator panel according to claim 9, wherein the phosphor base layer is made of a polyimide resin layer.   The method of manufacturing a scintillator panel according to claim 9, wherein in the step of forming the phosphor layer, the phosphor layer is formed on the phosphor base layer by an evaporation method.   The method for manufacturing a scintillator panel according to claim 9, wherein in the step of forming the phosphor layer, the phosphor layer is formed on the phosphor base layer by vapor deposition of an alkali halide: activator.   The method for manufacturing a scintillator panel according to claim 10, wherein the moisture-resistant protective layer is made of an organic film. A method for manufacturing a radiation detection device including a scintillator panel including a phosphor layer that converts radiation into light that can be detected by the photoelectric conversion element, on a sensor panel including the two-dimensionally arranged photoelectric conversion elements,
A step of subjecting the surface of the phosphor base layer disposed on the support substrate to an atmospheric pressure plasma treatment,
Forming a phosphor layer on the phosphor base layer surface to produce a scintillator panel,
Bonding the scintillator panel to the sensor panel. A sensor panel having photoelectric conversion elements arranged two-dimensionally,
A phosphor base layer disposed on the sensor panel and having a surface subjected to an atmospheric pressure plasma treatment;
A phosphor layer formed in contact with the phosphor base layer. A scintillator panel that converts radiation into light that can be detected by a photoelectric conversion element,
Phosphor underlayer disposed on a support substrate and having a surface subjected to atmospheric pressure plasma processing,
A scintillator panel comprising: a phosphor layer formed in contact with the phosphor base layer. A sensor panel having two-dimensionally arranged photoelectric conversion elements,
A scintillator panel according to claim 19,
A radiation detection device comprising: the sensor panel; and an adhesive layer that adheres the scintillator panel.   A radiation detection system comprising the radiation detection device according to claim 18.

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