JP2004319974A5 - - Google Patents
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- JP2004319974A5 JP2004319974A5 JP2004068488A JP2004068488A JP2004319974A5 JP 2004319974 A5 JP2004319974 A5 JP 2004319974A5 JP 2004068488 A JP2004068488 A JP 2004068488A JP 2004068488 A JP2004068488 A JP 2004068488A JP 2004319974 A5 JP2004319974 A5 JP 2004319974A5
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Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004068488A JP2004319974A (en) | 2003-04-02 | 2004-03-11 | Semiconductor device and its manufacturing method |
US11/075,258 US7535056B2 (en) | 2004-03-11 | 2005-03-08 | Semiconductor device having a low concentration layer formed outside a drift layer |
EP05005254A EP1583152A3 (en) | 2004-03-11 | 2005-03-10 | Semiconductor device with lightly doped layer and method of manufacturing the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003098799 | 2003-04-02 | ||
JP2004068488A JP2004319974A (en) | 2003-04-02 | 2004-03-11 | Semiconductor device and its manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004319974A JP2004319974A (en) | 2004-11-11 |
JP2004319974A5 true JP2004319974A5 (en) | 2005-07-14 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004068488A Pending JP2004319974A (en) | 2003-04-02 | 2004-03-11 | Semiconductor device and its manufacturing method |
Country Status (1)
Country | Link |
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JP (1) | JP2004319974A (en) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7786533B2 (en) * | 2001-09-07 | 2010-08-31 | Power Integrations, Inc. | High-voltage vertical transistor with edge termination structure |
JP4747260B2 (en) * | 2003-04-16 | 2011-08-17 | 富士電機株式会社 | Method of manufacturing reverse blocking insulated gate bipolar transistor |
JP4631268B2 (en) * | 2003-10-29 | 2011-02-16 | 富士電機システムズ株式会社 | Semiconductor device |
JP4930894B2 (en) * | 2005-05-13 | 2012-05-16 | サンケン電気株式会社 | Semiconductor device |
JP4945988B2 (en) * | 2005-09-29 | 2012-06-06 | 横河電機株式会社 | Semiconductor device and manufacturing method of semiconductor device |
JP2007189192A (en) * | 2005-12-15 | 2007-07-26 | Toshiba Corp | Semiconductor device |
JP5076335B2 (en) * | 2006-03-09 | 2012-11-21 | 株式会社デンソー | Semiconductor device and method for manufacturing semiconductor substrate having super junction structure |
US8580651B2 (en) * | 2007-04-23 | 2013-11-12 | Icemos Technology Ltd. | Methods for manufacturing a trench type semiconductor device having a thermally sensitive refill material |
JP2010028018A (en) * | 2008-07-24 | 2010-02-04 | Fuji Electric Device Technology Co Ltd | Semiconductor wafer, semiconductor device, and method for manufacturing semiconductor device |
JP5520024B2 (en) * | 2009-12-09 | 2014-06-11 | ルネサスエレクトロニクス株式会社 | Semiconductor device and manufacturing method thereof |
JP5672767B2 (en) * | 2010-05-17 | 2015-02-18 | 株式会社デンソー | Semiconductor device provided with vertical semiconductor element |
JP5874582B2 (en) * | 2012-08-29 | 2016-03-02 | 豊田合成株式会社 | Vertical semiconductor device and manufacturing method thereof |
JP6120525B2 (en) * | 2012-10-30 | 2017-04-26 | 三菱電機株式会社 | Silicon carbide semiconductor device |
JP2015019014A (en) * | 2013-07-12 | 2015-01-29 | 住友電気工業株式会社 | Semiconductor device and method of manufacturing the same |
JP6292929B2 (en) * | 2014-03-06 | 2018-03-14 | 新日本無線株式会社 | Semiconductor device, method of manufacturing the semiconductor device, and inspection method |
JP7158317B2 (en) * | 2019-03-07 | 2022-10-21 | 三菱電機株式会社 | semiconductor equipment |
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2004
- 2004-03-11 JP JP2004068488A patent/JP2004319974A/en active Pending