JP2004319974A5 - - Google Patents

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Publication number
JP2004319974A5
JP2004319974A5 JP2004068488A JP2004068488A JP2004319974A5 JP 2004319974 A5 JP2004319974 A5 JP 2004319974A5 JP 2004068488 A JP2004068488 A JP 2004068488A JP 2004068488 A JP2004068488 A JP 2004068488A JP 2004319974 A5 JP2004319974 A5 JP 2004319974A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004068488A
Other languages
Japanese (ja)
Other versions
JP2004319974A (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2004068488A priority Critical patent/JP2004319974A/en
Priority claimed from JP2004068488A external-priority patent/JP2004319974A/en
Publication of JP2004319974A publication Critical patent/JP2004319974A/en
Priority to US11/075,258 priority patent/US7535056B2/en
Priority to EP05005254A priority patent/EP1583152A3/en
Publication of JP2004319974A5 publication Critical patent/JP2004319974A5/ja
Pending legal-status Critical Current

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JP2004068488A 2003-04-02 2004-03-11 Semiconductor device and its manufacturing method Pending JP2004319974A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004068488A JP2004319974A (en) 2003-04-02 2004-03-11 Semiconductor device and its manufacturing method
US11/075,258 US7535056B2 (en) 2004-03-11 2005-03-08 Semiconductor device having a low concentration layer formed outside a drift layer
EP05005254A EP1583152A3 (en) 2004-03-11 2005-03-10 Semiconductor device with lightly doped layer and method of manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003098799 2003-04-02
JP2004068488A JP2004319974A (en) 2003-04-02 2004-03-11 Semiconductor device and its manufacturing method

Publications (2)

Publication Number Publication Date
JP2004319974A JP2004319974A (en) 2004-11-11
JP2004319974A5 true JP2004319974A5 (en) 2005-07-14

Family

ID=33478807

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004068488A Pending JP2004319974A (en) 2003-04-02 2004-03-11 Semiconductor device and its manufacturing method

Country Status (1)

Country Link
JP (1) JP2004319974A (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7786533B2 (en) * 2001-09-07 2010-08-31 Power Integrations, Inc. High-voltage vertical transistor with edge termination structure
JP4747260B2 (en) * 2003-04-16 2011-08-17 富士電機株式会社 Method of manufacturing reverse blocking insulated gate bipolar transistor
JP4631268B2 (en) * 2003-10-29 2011-02-16 富士電機システムズ株式会社 Semiconductor device
JP4930894B2 (en) * 2005-05-13 2012-05-16 サンケン電気株式会社 Semiconductor device
JP4945988B2 (en) * 2005-09-29 2012-06-06 横河電機株式会社 Semiconductor device and manufacturing method of semiconductor device
JP2007189192A (en) * 2005-12-15 2007-07-26 Toshiba Corp Semiconductor device
JP5076335B2 (en) * 2006-03-09 2012-11-21 株式会社デンソー Semiconductor device and method for manufacturing semiconductor substrate having super junction structure
US8580651B2 (en) * 2007-04-23 2013-11-12 Icemos Technology Ltd. Methods for manufacturing a trench type semiconductor device having a thermally sensitive refill material
JP2010028018A (en) * 2008-07-24 2010-02-04 Fuji Electric Device Technology Co Ltd Semiconductor wafer, semiconductor device, and method for manufacturing semiconductor device
JP5520024B2 (en) * 2009-12-09 2014-06-11 ルネサスエレクトロニクス株式会社 Semiconductor device and manufacturing method thereof
JP5672767B2 (en) * 2010-05-17 2015-02-18 株式会社デンソー Semiconductor device provided with vertical semiconductor element
JP5874582B2 (en) * 2012-08-29 2016-03-02 豊田合成株式会社 Vertical semiconductor device and manufacturing method thereof
JP6120525B2 (en) * 2012-10-30 2017-04-26 三菱電機株式会社 Silicon carbide semiconductor device
JP2015019014A (en) * 2013-07-12 2015-01-29 住友電気工業株式会社 Semiconductor device and method of manufacturing the same
JP6292929B2 (en) * 2014-03-06 2018-03-14 新日本無線株式会社 Semiconductor device, method of manufacturing the semiconductor device, and inspection method
JP7158317B2 (en) * 2019-03-07 2022-10-21 三菱電機株式会社 semiconductor equipment

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