JP2004296687A - Imaging element and its manufacturing method, imaging module and electronic apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an imaging module in which the size is reduced. <P>SOLUTION: The imaging module comprises a substrate 10, an imaging element 1 formed on a first surface 12 side of the substrate 10 and including a light receiving part 20 for converting light energy 72 entering from a second surface 14 side opposite to the first surface 12 side, and a wiring board 40 onto which the imaging element 1 is face down bonded. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an imaging device and a method for manufacturing the same, an imaging module, and electronic equipment.
[0002]
[Prior art]
[0003]
[Patent Document 1]
JP 2001-128072 A
BACKGROUND OF THE INVENTION
There is a demand for miniaturization of imaging modules such as CCD and CMOS sensors. In the conventional imaging device, the light receiving unit is formed on the same surface as the surface on which the pad (electrode) is formed, and converts light energy incident from the light receiving unit side. Therefore, in many cases, the image sensor is mounted face-up, and a wire is required, which limits the size reduction. Alternatively, a form in which an image sensor is mounted face down on a substrate is known. In that case, since the light receiving portion faces the substrate side, it is required to use a light transmitting substrate or a substrate having a through hole. There were various restrictions.
[0005]
An object of the present invention is to reduce the size of an imaging module.
[0006]
[Means for Solving the Problems]
(1) An image sensor according to the present invention includes a substrate and a light receiving unit formed on a first surface side of the substrate and configured to convert light energy incident from a second surface side opposite to the first surface. And According to the present invention, the light energy incident from the second surface opposite to the first surface on which the light receiving portion is formed is converted. According to this, for example, when a pad is formed on the first surface side, it is possible to secure an optical path on the back surface (second surface) side of the image sensor that has been face-down bonded. Therefore, not only the size can be reduced by omitting the wires, but also the reliability can be improved by simplifying the structure. Further, an optical path at the same distance as the thickness of the substrate can be ensured, and even if an optical path at a predetermined distance is required, the size can be reduced as much as possible.
(2) In this imaging device,
The semiconductor device may further include a pad formed on the first surface side of the substrate.
(3) The image pickup device according to the present invention includes a substrate, a pad formed on the first surface side of the substrate, and light energy incident from a second surface side opposite to the first surface. And a light receiving unit for conversion. According to the present invention, light energy incident from a second surface opposite to the first surface on which the pad is formed is converted. According to this, for example, an optical path can be secured on the back surface (second surface) side of the image sensor that has been face-down bonded. Therefore, not only the size can be reduced by omitting the wires, but also the reliability can be improved by simplifying the structure.
(4) In this imaging device,
The light-emitting device may further include a first light-shielding film formed on the first surface of the substrate, at least in a region overlapping with the light receiving unit. As a result, it is possible to prevent noise from occurring in the image sensor.
(5) In this imaging device,
The semiconductor device may further include a microlens provided on the second surface side of the substrate. Thereby, the light incident on the light receiving unit can be reduced, and the sensitivity of the light receiving unit is improved.
(6) In this imaging device,
The microlens may be a part of the substrate. According to this, the number of parts can be reduced and the structure can be simplified.
(7) In this imaging device,
The microlens may be mounted on the second surface of the substrate.
(8) In this imaging device,
A second light-shielding film may be further formed on the second surface of the substrate so as to avoid the microlenses. As a result, it is possible to prevent noise from occurring in the image sensor.
(9) In this imaging device,
Including a plurality of said micro lenses,
The second light-shielding film may be provided so as to cover between the adjacent microlenses. As a result, it is possible to prevent noise from occurring in the image sensor.
(10) In this imaging device,
The substrate may be a semiconductor wafer.
(11) In this imaging device,
The substrate may be a semiconductor chip.
(12) In this imaging device,
The light receiving unit is formed at a central portion of the semiconductor chip,
At the end of the semiconductor chip, a thick portion thicker than the central portion is formed,
The second surface of the semiconductor chip may be formed such that the central portion is recessed from the thick portion. According to this, since the end of the semiconductor chip can be reinforced, it is possible to prevent the image sensor from cracking and chipping.
(13) In this imaging device,
Including a plurality of the light receiving units,
Each of the light receiving units may be arranged for image sensing.
(14) An imaging module according to the present invention includes:
A wiring board on which the image sensor is face-down bonded,
including. According to the present invention, it is possible to secure an optical path on the back surface (second surface) side of the image sensor that has been face-down bonded. Therefore, not only the size can be reduced by omitting the wires, but also the reliability can be improved by simplifying the structure.
(15) In this imaging module,
The image processing apparatus may further include an underfill material provided between the imaging device and the wiring board.
(16) In this imaging module,
The wiring substrate may include a third light-shielding film at least in a region overlapping with the light-receiving unit of the image sensor. As a result, it is possible to prevent noise from occurring in the image sensor.
(17) In this imaging module,
The image display device may further include a base material mounted on the wiring substrate and holding a lens provided above the image sensor.
(18) An electronic device according to the present invention includes the imaging module.
(19) In the method of manufacturing an image sensor according to the present invention, (a) grinding a substrate having a light receiving portion formed on a first surface side from a second surface side opposite to the first surface. ,
(B) providing a microlens on the second surface side of the substrate;
including. According to the present invention, the microlens is provided on the second surface side opposite to the first surface on which the light receiving section is formed. The light energy passes through the inside of the substrate from the second surface on the microlens side and reaches the light receiving section. According to this, for example, when a pad is formed on the first surface side, it is possible to secure an optical path on the back surface (second surface) side of the image sensor that has been face-down bonded. Therefore, not only the size can be reduced by omitting the wires, but also the reliability can be improved by simplifying the structure.
(20) In this method of manufacturing an imaging device,
In the step (b), the microlens may be formed by etching the substrate. According to this, the number of parts can be reduced and the structure can be simplified.
(21) In this method of manufacturing an image sensor,
The step (b) comprises:
(B ₁ ) forming a mask having an opening on the second surface of the substrate;
(B ₂₎ by the opening of the mask, etching the second surface of the substrate,
(B ₃ ) removing the mask;
May be included.
(22) In this method of manufacturing an image sensor,
(B ₄₎ the (b ₃₎ after the step may further include isotropically etching said second surface of said substrate. By doing so, for example, a microlens having a smooth curved surface can be formed, and the sensitivity of the light receiving unit can be improved.
[0007]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0008]
(First Embodiment)
FIG. 1 is a diagram illustrating an imaging module according to a first embodiment of the present invention. FIG. 2 is a diagram illustrating the image sensor according to the present embodiment. 3 to 7 are diagrams illustrating a method for manufacturing the imaging device according to the present embodiment. The imaging module according to the present embodiment includes the imaging device 1 and the wiring board 40.
[0009]
As shown in FIG. 2, the image sensor 1 includes a substrate 10 and a light receiving unit (for example, a photodiode) 20 formed on the substrate 10. The imaging device 1 is an image sensor (for example, a CCD image sensor or a CMOS image sensor). The image sensor 1 has a plurality of light receiving units 20. The light receiving unit 20 is a unit that converts the light energy 72 into another energy (electric signal), and can be called an energy conversion unit (or a sensor unit). For example, in the case of a two-dimensional image sensor, a plurality of light receiving units 20 are arranged so as to be able to perform image sensing corresponding to a plurality of pixels arranged two-dimensionally.
[0010]
The substrate 10 is a light transmissive substrate. Specifically, the substrate 10 has a property of transmitting light, and may be transparent or colored. The light transmittance of the substrate 10 need not be 100% unless it is 0%. The substrate 10 may be a semiconductor substrate (for example, a silicon substrate). The substrate 10 may be a semiconductor chip as shown in FIG. 2, or may be a semiconductor wafer (an aggregate of regions to be a plurality of semiconductor chips). The substrate 10 has two opposing surfaces (first and second surfaces 12 and 14). The substrate 10 may have a rectangular parallelepiped shape.
[0011]
An integrated circuit (including a control circuit and a light receiving unit 20) is formed on the substrate 10. The integrated circuit is formed on the first surface 12 side of the substrate 10 (near the first surface 12). That is, as shown in FIG. 2, the light receiving section 20 may be formed on the first surface 12 side. Pads (electrodes) 22 electrically connected to the integrated circuit are formed on the substrate 10. The pad 22 may be formed thin and flat on the first surface 12 side of the substrate 10. The pad 22 may be formed of an aluminum-based or copper-based metal. A bump 24 may be formed on the pad 22. In that case, the pad 22 and the bump 24 serve as electrodes of the image sensor 1. Each of the plurality of pads 22 may be formed at an end of the substrate (for example, a semiconductor chip) 10. Specifically, the pads 22 may be arranged along a plurality of sides (for example, two or four opposing sides) of the substrate 10. The plurality of pads 22 may be formed so as to surround the plurality of light receiving units 20. In the example shown in FIG. 2, the light receiving unit 20 is formed at the center of the substrate 10, and the pad 22 is formed at an end of the substrate 10.
[0012]
When the substrate 10 is a semiconductor chip, a thick part 16 thicker than the central part may be formed at the end of the semiconductor chip. More specifically, the center of the second surface 14 of the semiconductor chip (substrate 10) is more concave than the thick portion 16. The first surface 12 of the semiconductor chip (substrate 10) has a central portion (thin portion) and a thick portion 16 flush with each other. The thick part 16 may be formed so as to surround the outer periphery of the semiconductor chip (substrate 10). According to this, since the end of the substrate 10 can be reinforced, it is possible to prevent the image sensor from cracking and chipping.
[0013]
On the first surface 12 of the substrate 10, a protective film (passivation film (for example, silicon oxide film or silicon nitride film)) 18 is formed. The pad 22 is exposed from the protective film 18. The protection film 18 covers the light receiving unit 20. In the present embodiment, since the light receiving unit 20 converts the light energy 72 incident from the second surface 14 opposite to the first surface 12, the protective film 18 does not necessarily need to have light transmittance. Absent. Conversely, the protective film 18 is preferably a light-shielding film having a light-shielding property (a property of blocking light having a wavelength to which the integrated circuit (the light receiving unit 20) reacts). By doing so, it is possible to prevent noise from occurring in the image sensor. The light shielding film absorbs or reflects light. Alternatively, as shown in FIG. 2, separately from the protective film 18, a light-shielding film (first light-shielding film) is provided on the first surface 12 of the substrate 10 and at least in a region overlapping with the light receiving unit 20. 28 may be formed. The light-shielding film 28 is formed on the protective film 18 and can be formed of a metal film (for example, an aluminum-based metal) or a resin layer.
[0014]
The imaging device 1 includes a plurality of micro lenses 26. The microlenses 26 are provided corresponding to the plurality of light receiving units 20, respectively, and can narrow the light incident on the light receiving units 20 as shown in FIG. The micro lens 26 may be a convex lens. The surface of the micro lens 26 may be a smooth curved surface, but the surface shape is not limited as long as it can refract light. The micro lens 26 is provided on the second surface 14 side (specifically, the center) of the substrate 10. That is, in the present embodiment, light receiving section 20 receives light incident from second surface 14 side. As shown in FIG. 2, the microlens 26 may be a part of the substrate 10. That is, the second surface 14 of the substrate 10 is a micro lens array. In the example shown in FIG. 2, the microlens 26 is disposed at a central portion surrounded by the thick portion 16 of the substrate 10.
[0015]
When the image sensor 1 performs color display, the substrate 10 is provided with a color filter (not shown). The color filters are provided corresponding to each of the plurality of light receiving units 20. A color filter may be formed between the micro lens 26 and the light receiving unit 20. The color filters may be formed directly on the substrate 10.
[0016]
A light-shielding film (second light-shielding film) 30 may be formed on the second surface 14 of the substrate 10. The contents of the light shielding film are as described above. The light-shielding film 30 is formed avoiding the microlens 26. Specifically, the light shielding film 30 is formed around the plurality of microlenses 26 (for example, on the thick portion 16). When adjacent microlenses 26 are separated from each other, the light-shielding film 30 may also cover adjacent microlenses 26. Alternatively, adjacent microlenses 26 may be in contact with each other. In that case, the light shielding film 30 may be formed around the plurality of microlenses 26.
[0017]
According to the image sensor according to the present embodiment, light energy 72 incident from second surface 14 opposite to first surface 12 on which light receiving unit 20 is formed is converted. The light energy 72 passes through the inside of the substrate 10 from the second surface 14 and reaches the light receiving unit 20. According to this, since an optical path is secured on the back surface (second surface 14) side of the image sensor, the degree of freedom in design is greatly improved, and the size of an image pickup module or an electronic device described later can be reduced. . For example, when the pad 22 is formed on the first surface 12 side, an optical path can be secured on the back surface (the second surface 14) side of the imaging device 1 which is face-down bonded. Therefore, not only the size can be reduced by omitting the wires, but also the reliability can be improved by simplifying the structure. Further, an optical path at the same distance as the thickness of the substrate 10 can be ensured, and even if an optical path at a predetermined distance is required, the size can be reduced as much as possible.
[0018]
Next, the imaging module will be described. The imaging module according to the present embodiment is an image sensor module.
[0019]
The wiring substrate 40 includes a substrate (base substrate) 42 and a wiring pattern 44 formed on the substrate 42. The substrate 42 may be a rigid substrate or a flexible substrate. In the present embodiment, since the light energy 72 incident from the side opposite to the wiring substrate 40 is converted, the substrate 42 does not need to have a light transmitting property, and may be formed of a material having a light blocking effect. . This is the same for the wiring pattern 44. The wiring pattern 44 is formed on one surface of the substrate 42 and can be formed by applying a known technique such as a plating technique and an exposure technique. The wiring pattern 44 has a plurality of electrical connections (for example, lands). The wiring substrate 40 may have a light shielding film (third light shielding film) 46. The light-shielding film 46 is provided at least in a region overlapping with the light receiving unit 20 of the image sensor 1. The light shielding film 46 may be formed inside the substrate 42 as shown in FIG. 1, or may be formed on any surface of the substrate 42. The light shielding film 46 may be a metal film. The other contents of the light-shielding film are as described above.
[0020]
The image sensor 1 is face-down bonded to the wiring board 40. More specifically, the first surface 12 on the side on which the pads 22 (bumps 24) and the light receiving sections 20 are formed faces the surface of the wiring board 40. According to this, it is possible to secure an optical path on the back surface (second surface 14) side of the imaging device 1 which is face-down bonded. An underfill material (sealing material) 48 may be provided between the imaging device 1 and the wiring board 40. The underfill material 48 may be provided so as to cover the entire first surface 12 of the image sensor 1. It is preferable that the underfill material 48 has a light-shielding property, since it is possible to prevent noise of the image sensor.
[0021]
The imaging module includes a substrate 50. The base member 50 is an exterior of the imaging device 1 and can be called a housing. The substrate 50 is preferably formed of a material having light-shielding properties (for example, resin or metal). The substrate 50 may be formed by injection molding. The base member 50 is attached to the wiring board 40 so as to surround the imaging device 1. The base material 50 may be adhered to the wiring board 40 with an adhesive material 68. The substrate 50 holds the lens 52. The substrate 50 and the lens 52 can be called an imaging optical system. The substrate 50 may be composed of a plurality of members that can be separated from each other as described later, or may be composed integrally of one member.
[0022]
The substrate 50 includes first and second portions 54 and 56. The lens 52 is attached to the first portion 54. That is, the first portion 54 is a lens folder. Specifically, the first portion 54 has a first hole 58, and holds the lens 52 in the first hole 58. The lens 52 may be fixed in the first hole 58 by a screw (not shown) formed inside the first portion 54. The lens 52 is provided above the image sensor 1.
[0023]
As shown in FIG. 1, the second portion 56 has a second hole 60 and holds the first portion 54 in the second hole 60. The first and second holes 58 and 60 constitute one through hole communicating with each other. The imaging device 1 may be arranged in the second hole 60. Outside the first part 54 and inside the second hole 60 of the second part 56, first and second screws 62, 64 are formed, by which the first and second parts 54, 64 are formed. 56 are connected. The position of the first portion 54 can be adjusted along the axial direction of the second hole 60 in the second portion 56 by the first and second screws 62 and 64. Thus, the focus of the lens 52 can be adjusted.
[0024]
The imaging module includes an optical filter 66. The optical filter 66 may be one that transmits only light of a specific wavelength (for example, visible light) or one that has a small loss with respect to light of a specific wavelength (for example, visible light). The optical filter 66 is provided at a position where the light energy 72 passes. As shown in FIG. 1, the optical filter 66 may be attached to the substrate 50 (for example, the second hole 60). Alternatively, the optical filter 66 may be attached to the second surface 14 of the imaging device 1. Alternatively, the lens 52 may have the function of the optical filter 66. On the optical filter 66, optical functional films such as an anti-reflection film (AR coating) and an infrared shielding film (IR coating) are formed.
[0025]
The flexible board 70 may extend from the end of the wiring board 40. For example, the wiring board 40 may be electrically connected to another circuit board (for example, a motherboard) via the flexible board 70. Alternatively, the wiring board 40 may be a motherboard. Other electronic components (not shown) may be mounted on the wiring board 40. Electronic components include active components (semiconductor chips with built-in integrated circuits, etc.), passive components (resistors, capacitors, etc.), functional components (components that change input signal characteristics such as filters), connection components (flexible boards, connectors, Switch, etc.) and conversion parts (parts for converting an input signal of a sensor or the like into a different energy system).
[0026]
Next, a method for manufacturing the image sensor will be described. In this embodiment, a substrate 100 is prepared as shown in FIG. Substrate 100 may be a semiconductor wafer. More specifically, a plurality of groups of light receiving units 20 and a plurality of groups of pads 22 are formed on the substrate 100. As shown in FIG. 1, the light receiving section 20 and the pad 22 are formed on the first surface 12 side of the substrate 100.
[0027]
As shown in FIG. 4, the substrate 100 is ground from the second surface 14 side. That is, the substrate 100 is ground from the side opposite to the integrated circuit (light receiving unit 20) side. The substrate 100 is placed on a stage, and the substrate 100 is ground by the grindstone of the grinding tool 80. The substrate 100 may be polished. By reducing the thickness of the substrate 100, the sensitivity of the light receiving unit 20 to the light energy 72 passing through the inside of the substrate 100 is improved.
[0028]
Next, a micro lens 26 is formed as shown in FIGS. The micro lens 26 is formed on the second surface side of the substrate 100. In this embodiment mode, a part of the substrate 100 is processed as the microlens 26 by etching the substrate 100. According to this, the number of parts can be reduced and the structure can be simplified. Note that FIGS. 5A to 7 show a part of the substrate 100 (a region to be a semiconductor chip).
[0029]
First, as shown in FIGS. 5A and 5B, a mask 110 for etching is formed. For example, as shown in FIG. 5A, a mask (for example, a silicon oxide film) 110 is formed on the entire second surface 14 by, for example, a CVD method, and a resist 120 is formed on the mask 110. The resist 120 has an opening 122. The opening 122 may be formed by patterning the resist 120 using a photolithography technique. Then, as shown in FIG. 5B, a portion of the mask 110 exposed from the opening 122 of the resist 120 is etched to pattern the mask 110. The resist 120 is removed after patterning the mask 110. The mask 110 has an opening 112 at a position corresponding to the opening 122 of the resist 120.
[0030]
As shown in FIG. 5C, a portion of the substrate 100 exposed from the opening 112 of the mask 110 is etched to form a concave portion 102. The etching may be by chemical means, physical means or a combination thereof. The etching may be dry etching using a gas or wet etching using a solution. In this step, it is preferable to apply anisotropic etching in which etching in the width direction with respect to the depth direction of the substrate 10 is suppressed. By doing so, the processing dimensions of the microlens 26 can be reduced. The etching depth may be determined according to the shape of the microlens 26.
[0031]
FIG. 6 is a perspective view of the substrate 100, and FIG. 5D is a sectional view taken along line VD-VD of FIG. As shown in FIG. 5D, the mask 110 is removed from the substrate 100. Thus, a plurality of convex portions 104 are formed on the second surface 14 of the substrate 100. The convex portion 104 is formed corresponding to each of the plurality of light receiving portions 20. As shown in FIG. 6, the planar shape of each convex portion 104 may be a quadrangle or a circle. The recess 102 is formed at the center of the substrate 100, whereby the thick portion 16 is formed at the end of the substrate 100.
[0032]
If necessary, as shown in FIG. 7, the surfaces of the plurality of convex portions 104 may be cut. For example, the surface of each projection 104 may be made a smooth curved surface by isotropically etching the second surface 14 of the substrate 100. By doing so, the sensitivity of the light receiving unit 20 is further improved.
[0033]
Thereafter, if necessary, light-shielding films 28 and 30 are formed on the substrate 10 (see FIG. 2). The light-shielding films 28 and 30 may be metal films, and may be formed in predetermined portions by, for example, a sputtering method, a vacuum evaporation method, or the like. The other contents of the method for manufacturing the imaging device according to the present embodiment can be derived from the above description.
[0034]
(Second embodiment)
FIG. 8 is a diagram showing an image sensor according to the second embodiment of the present invention. In the present embodiment, the micro lens 126 is mounted on the second surface 14 of the substrate 10. That is, the micro lens 126 may be separate from the substrate 10. The microlenses 126 have optical transparency and may be formed of, for example, a silicon substrate. When the image sensor performs color display, a color filter (not shown) is provided on the second surface 14, a flattening layer (not shown) is provided on the color filter, and a plurality of microlenses 126 are provided thereon. May be mounted. The adjacent microlenses 126 may be in contact with each other without being separated. The microlenses 126 having such fine processing dimensions can be formed by injection molding. In that case, the light shielding film 30 is formed around the plurality of microlenses 126. Alternatively, the microlenses 126 may be formed by applying an etching technique. In addition, well-known technology can be applied to other items of the microlens.
[0035]
As an electronic device according to an embodiment of the present invention, a notebook personal computer 1000 illustrated in FIG. 9 includes a camera 1100 in which an imaging module is incorporated. The digital camera 2000 shown in FIG. 10 has an imaging module. Further, the mobile phone 3000 illustrated in FIGS. 11A and 11B includes a camera 3100 in which an imaging module is incorporated.
[0036]
The present invention is not limited to the embodiments described above, and various modifications are possible. For example, the invention includes configurations substantially the same as the configurations described in the embodiments (for example, a configuration having the same function, method, and result, or a configuration having the same object and result). Further, the invention includes a configuration in which a non-essential part of the configuration described in the embodiment is replaced. Further, the invention includes a configuration having the same operation and effect as the configuration described in the embodiment, or a configuration capable of achieving the same object. Further, the invention includes a configuration in which a known technique is added to the configuration described in the embodiment.
[Brief description of the drawings]
FIG. 1 is a diagram illustrating an imaging module according to a first embodiment of the present invention.
FIG. 2 is a diagram illustrating an imaging device according to a first embodiment of the present invention.
FIG. 3 is a diagram illustrating a method for manufacturing the imaging device according to the first embodiment of the present invention.
FIG. 4 is a diagram illustrating a method for manufacturing the imaging device according to the first embodiment of the present invention.
FIGS. 5A to 5D are diagrams illustrating a method for manufacturing an image sensor according to the first embodiment of the present invention.
FIG. 6 is a diagram illustrating a method for manufacturing the imaging device according to the first embodiment of the present invention.
FIG. 7 is a diagram illustrating the method for manufacturing the imaging device according to the first embodiment of the present invention.
FIG. 8 is a diagram illustrating an image sensor according to a second embodiment of the present invention.
FIG. 9 is a diagram showing an electronic apparatus according to the embodiment of the present invention.
FIG. 10 is a diagram showing an electronic apparatus according to the embodiment of the present invention.
FIGS. 11A and 11B are diagrams illustrating an electronic device according to an embodiment of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Image sensor 10 ... Substrate 16 ... Thick part 18 ... Protective film 20 ... Light receiving part 22 ... Pad 24 ... Bump 26 ... Microlens 28 ... Light shielding film 30 ... Light shielding film 40 ... Wiring board 42 ... Substrate 44 ... Wiring pattern 46 ... light shielding film 48 ... underfill material 50 ... base material 52 ... lens 72 ... light energy 100 ... substrate 110 ... mask 112 ... opening 126 ... microlens

Claims (22)

An image sensor comprising: a substrate; and a light receiving unit formed on a first surface side of the substrate and configured to convert light energy incident from a second surface side opposite to the first surface. The imaging device according to claim 1,
An image sensor further comprising a pad formed on the first surface side of the substrate. An image pickup device comprising: a substrate; a pad formed on a first surface side of the substrate; and a light receiving unit that converts light energy incident from a second surface side opposite to the first surface. The imaging device according to any one of claims 1 to 3,
An imaging device further comprising a first light-shielding film formed on the first surface of the substrate and at least in a region overlapping the light receiving unit. The imaging device according to any one of claims 1 to 4,
An image sensor further including a microlens provided on the second surface side of the substrate. The imaging device according to claim 5,
The imaging device, wherein the microlens is a part of the substrate. The imaging device according to claim 5,
The imaging device, wherein the microlens is mounted on the second surface of the substrate. The imaging device according to any one of claims 5 to 7,
An imaging device further comprising a second light-shielding film formed on the second surface of the substrate so as to avoid the microlenses. The imaging device according to claim 8,
Including a plurality of said micro lenses,
The imaging device, wherein the second light-shielding film is provided so as to cover a space between the adjacent microlenses. The imaging device according to any one of claims 1 to 9,
The image pickup device wherein the substrate is a semiconductor wafer. The imaging device according to any one of claims 1 to 9,
The substrate is an imaging device that is a semiconductor chip. The imaging device according to claim 11,
The light receiving unit is formed at a central portion of the semiconductor chip,
At the end of the semiconductor chip, a thick portion thicker than the central portion is formed,
The imaging device, wherein the second surface of the semiconductor chip is formed such that the central portion is recessed from the thick portion. The imaging device according to any one of claims 1 to 12,
Including a plurality of the light receiving units,
An image sensor in which each of the light receiving units is arranged for image sensing. An image sensor according to any one of claims 1 to 13,
A wiring board on which the image sensor is face-down bonded,
An imaging module including: The imaging module according to claim 14,
An imaging module further including an underfill material provided between the imaging element and the wiring board. The imaging module according to claim 14 or claim 15,
The imaging module, wherein the wiring substrate includes a third light-shielding film at least in a region overlapping the light receiving unit of the imaging device. In the imaging module according to any one of claims 14 to 16,
An imaging module further including a base material mounted on the wiring board and holding a lens provided above the imaging element. An electronic apparatus comprising the imaging module according to any one of claims 14 to 17. (A) grinding a substrate having a light receiving portion formed on a first surface side from a second surface side opposite to the first surface;
(B) providing a microlens on the second surface side of the substrate;
A method for manufacturing an imaging device, comprising: The method for manufacturing an image sensor according to claim 19,
In the step (b), a method for manufacturing an image sensor in which the microlenses are formed by etching the substrate. The method for manufacturing an image sensor according to claim 20,
The step (b) comprises:
(B ₁ ) forming a mask having an opening on the second surface of the substrate;
(B ₂₎ by the opening of the mask, etching the second surface of the substrate,
(B ₃ ) removing the mask;
A method for manufacturing an imaging device, comprising: The method for manufacturing an image sensor according to claim 21,
(B ₄₎ the (b ₃₎ after step, further comprising the production method of the image pickup element isotropically etching said second surface of said substrate.

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