JP2004277815A - Substrate plating method, fixture for substrate plating, and substrate plating device - Google Patents

Substrate plating method, fixture for substrate plating, and substrate plating device Download PDF

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JP2004277815A
JP2004277815A JP2003070893A JP2003070893A JP2004277815A JP 2004277815 A JP2004277815 A JP 2004277815A JP 2003070893 A JP2003070893 A JP 2003070893A JP 2003070893 A JP2003070893 A JP 2003070893A JP 2004277815 A JP2004277815 A JP 2004277815A
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substrate
plating
plated
holding
jig
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JP4138542B2 (en
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Tadaaki Yamamoto
忠明 山本
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Ebara Corp
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Ebara Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate plating method where plating can simultaneously be applied to both the faces of the substrate to be plated, the plating process can remarkably be reduced, and also, a metal plating film can be formed even in a through hole or a hole pattern, to provide a fixture for substrate plating, and to provide a substrate plating device. <P>SOLUTION: The fixture 10 for substrate plating is used for holding the substrate to be plated, and dipping the same into a plating liquid of a plating tank in the plating device. A substrate holding mechanism is provided with first and second holding members 11 and 12 capable of opening and closing via a hinge mechanism 13. The first and second holding members 11 and 12 are respectively provided with holes 11a and 12a to form into openings for exposing the prescribed regions in the substrate to be substrate, and are further provided with sealing members arranged around the holes 11a and 12a, and, on the holding of the substrate to be plated with both the holding members 11 and 12, made close to the surface of the substrate to be plated, and sealing the prescribed regions in the peripheral parts so as to be sealed spaces. The insides of the sealed spaces are provided with electrode contacts to be contacted with double-sided electroconductive films in the substrate to be plated. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【0001】
【発明の属する技術分野】
本発明は半導体デバイス、液晶素子等の電子素子用基板の表面にCu等の金属めっき膜を形成し、該表面に形成された配線パターン溝、スルーホール、穴パターンを該金属めっき膜で埋め込むのに好適な基板めっき方法、基板めっき用治具及び基板めっき装置に関するものである。
【0002】
【従来の技術】
従来この種の基板めっき用治具としては、特許文献1に記載されたものがある。この基板めっき用治具110は、図24に示すように、板状の第1保持部材111と、環状のシールパッキン113が設けられた第2保持部材112とを具備し、該第1保持部材111とシールパッキン113の間に半導体ウエハ116を挟持保持すると共に、該シールパッキン113の内周部に半導体ウエハ116の表面が露出するように開口112aを形成し、第1保持部材111に保持される半導体ウエハ116の外周部分に外部電極に導通する第1通電部材117を設け、第2保持部材112には第1保持部材111の第1通電部材117と保持される半導体ウエハ116の面に露出した導電膜との両方に接触し、且つシールパッキン113でシールされる第2通電部118を設けたものである。
【0003】
上記構成の基板めっき用治具を用いてめっきを行うには、めっき液を収容しためっき槽の該めっき液中に、該基板めっき用治具に保持された半導体ウエハを浸漬すると共に、該半導体ウエハの露出面に対向して陽極電極板を配置し、半導体ウエハと陽極電極板との間にめっき電源を印加して、半導体ウエハの露出面に金属めっき膜を形成している。
【0004】
上記従来構成の基板めっき用治具を用いためっき装置では、被めっき基板である半導体ウエハの片面にしかめっきできず、下記のような問題があった。
▲1▼被めっき基板の両面にめっきしようとすると2倍の運転時間を必要とする。
▲2▼被めっき基板のめっき膜厚の面内均一性に影響がでる。
▲3▼被めっき基板のスルーホールや穴パターンに金属めっき膜を形成できない。
【0005】
【特許文献1】
特開平11−172492号公報
【0006】
【発明が解決しようとする課題】
本発明は上述の点に鑑みてなされたもので、被めっき基板の両面を同時にめっきでき、めっき工程を大幅に低減でき、且つスルーホールや穴パターン内にも金属めっき膜を形成できる基板めっき方法、基板めっき用治具及び基板めっき装置を提供することを目的とする。
【0007】
【課題を解決するための手段】
上記課題を解決するため請求項1に記載の発明は、電子素子用被めっき基板に金属めっき膜を形成する基板めっき方法において、被めっき基板をめっき液中に浸漬して配置すると共に、該基板の両表面とアノード電極の間にめっき電圧を印加し、該被めっき基板の両面に同時に金属めっき膜を形成することを特徴とする。
【0008】
請求項2に記載の発明は、被めっき基板に金属めっき膜を形成する基板めっき方法において、被めっき基板をその両面の所定領域を露出してめっき液中に配置すると共に、該両露出面と該両露出面にそれぞれ対向するアノード電極との間にめっき電圧を印加し、該被めっき基板の両露出面に同時に金属めっき膜を形成することを特徴とする。
【0009】
請求項3に記載の発明は、請求項1又は2に記載の基板めっき方法において、被めっき基板にはスルーホール、両面に配線溝パターン、穴パターンが形成されており、該スルーホールや穴パターンを両面から同時にめっきし、該スルーホール、配線溝パターン、穴パターンを金属膜で埋め込むことを特徴とする。
【0010】
上記のように被めっき基板の両面に同時に金属めっき膜を形成することにより、例えば、多層構造からなる半導体デバイスの製造工程における半導体ウエハ面上に形成されたスルーホール、配線溝パターン、穴パターンを金属めっき膜で埋めるためのめっき処理が容易になると共に、そのめっき処理工程を大幅に短縮できる。
【0011】
請求項4に記載の発明は、請求項1又は2に記載の基板めっき方法において、被めっき基板のめっき面に通電される電流値を各々制御することを特徴とする。
【0012】
上記のように被めっき基板のめっき面に通電される電流値を各々制御することにより、各面に形成されるめっき膜の膜厚を容易に調整することができる。
【0013】
請求項5に記載の発明は、被めっき基板を、めっき装置のめっき槽のめっき液中に浸漬保持するための基板めっき用治具であって、被めっき基板の上縁部を挟持する基板挟持部と、該基板挟持部に挟持された被めっき基板の表面の導電膜に接触する電極接点を具備することを特徴とする。
【0014】
上記のように基板めっき用治具が基板挟持部と、電極接点を具備するので、被めっき基板の上縁部を基板挟持部で挟持し、該被めっき基板の挟持された部分から下方の所定部分をめっき液に浸漬し、この浸漬された基板両面とアノードの間にめっき電源を印加することにより、基板の両面に同時に金属めっき膜を形成することができる。そして被めっき基板の挟持された部分は、めっき液面上にあるから、電極接点はめっき液に接液することがないから、該電極接点部分をめっき液から隔離するためのシールを施す必要がない。
【0015】
請求項6に記載の発明は、めっき液を収容しためっき槽を具備し、該めっき槽のめっき液中に請求項5に記載の基板めっき用治具で保持した被めっき基板を、基板挟持部で挟持された部分から下方の所定部分を浸漬し、該被めっき基板のめっき液に浸漬した部分の両面にそれぞれ対向してアノード電極を配置したことを特徴とする基板めっき装置にある。
【0016】
上記のように基板めっき装置を請求項5に記載の基板めっき治具で保持した被めっき基板のめっき液に浸漬した部分の両面にそれぞれ対向してアノード電極を配置した構成とすることにより、簡単な構成で被めっき基板の両面に同時にめっき膜を形成することが可能となる。
【0017】
請求項7に記載の発明は、被めっき基板を、めっき装置のめっき槽のめっき液中に浸漬保持するための基板めっき用治具であって、被めっき基板をその周縁部の所定領域をシールして密閉すると共に、該被めっき基板の両面所定領域を露出させて保持する基板保持機構と、密閉領域に配置され被めっき基板表面の導電膜に接触する電極接点を設けたことを特徴とする。
【0018】
基板めっき用治具を上記のように構成することにより、基板保持機構で被めっき基板を保持し、めっき槽のめっき液中に浸漬した場合、該被めっき基板の両面所定領域がめっき液に接液すると共に、密閉領域の導電膜には電極接点が接触して通電できるから、被めっき基板の両面の所定領域に同時に金属めっき膜を形成できるめっきを行うことができる。
【0019】
請求項8に記載の発明は、請求項7に記載の基板めっき用治具において、基板保持機構はヒンジ機構を介して開閉可能な第1及び第2の保持部材を具備し、第1及び第2の保持部材にはそれぞれ被めっき基板の所定領域を露出させるための開口を設けると共に、該開口の周囲に配設され両保持部材で前記被めっき基板を挟持した際、該被めっき基板の表面に密接し周縁部の所定領域をシールして密閉空間とするシール部材を設け、該密閉空間内に被めっき基板面の導電膜に接触する電極接点を設けたことを特徴とする。
【0020】
基板めっき用治具を上記のように構成することにより、基板保持機構の第1の保持部材と第2の保持部材で被めっき基板を挟持して保持し、めっき槽のめっき液中に浸漬した場合、該被めっき基板の両面所定領域は両保持部材の開口を通してめっき液に接液すると共に、シール部材で密閉された密閉領域の導電膜には電極接点が接触して通電できるから、被めっき基板の両面の所定領域に同時に金属めっき膜を形成できるめっきを行うことができる。
【0021】
請求項9に記載の発明は、請求項8に記載の基板めっき用治具において、第1と第2の保持部材で前記被めっき基板を挟んだ状態で該両保持部材の両側部を保持するクランプ部材を具備するクランプ機構を具備することを特徴とする。
【0022】
上記のようにクランプ機構のクランプ部材で被めっき基板を挟んだ状態で両保持部材の両側部を保持するから、簡単な構成で且つ確実に被めっき基板の保持状態を維持できる。
【0023】
請求項10に記載の発明は請求項8又は9に記載の基板めっき用治具において、第1保持部材の上部には一体的にハンガーが取付けられ、電極接点に導通する電極端子を該ハンガー部に設けたことを特徴とする。
【0024】
上記のように第1保持部材の上部には一体的にハンガーを取付けるので、該ハンガーを介して第1保持部材と第2保持部材で挟持された被めっき基板をめっき槽のめっき液中に浸漬した場合、該ハンガーの上端部はめっき液の液面より上に位置するから、上端部に設けた電極端子を通して被めっき基板の導電膜に容易に通電することが可能となる。
【0025】
請求項11に記載の発明は、めっき液を収容しためっき槽を具備し、該めっき槽のめっき液中に請求項7乃至10のいずれか1項に記載の基板めっき用治具で保持した被めっき基板を浸漬し、該被めっき基板の両露出面に対向しアノード電極を配置したことを特徴とする基板めっき装置にある。
【0026】
上記のように基板めっき装置を請求項7乃至10のいずれか1項に記載の基板めっき用治具で保持した被めっき基板をめっき液に浸漬し、該被めっき基板の両露出面に対向しアノード電極を配置した構成とすることにより、被めっき基板の両露出面に金属めっき膜を同時に形成することができる。
【0027】
【発明の実施の形態】
以下、本発明の実施の形態例を図面に基づいて説明する。図1乃至図12は本発明に係る基板めっき用治具の構成例を示す図で、図1は正面図、図2は平面図、図3は底面図、図4は図1のK−K断面矢視図、図5は図4のA矢視図、図6は図4のB矢視図、図7は図4のC矢視図、図8は図5のD−D断面矢視図、図9は図5のE−E断面矢視図、図10は図1のF−F断面矢視図、図11は図5のG−G断面矢視図、図12は図6のH−H断面矢視図である。
【0028】
基板めっき用治具10は、板状の第1保持部材11と第2保持部材12を具備し、両保持部材11、12は下端をヒンジ機構13で開閉自在に連結されている。ヒンジ機構13は、第2保持部材12に固定された樹脂材(例えば、HTPVC)からなる2本のフック13−1、13−1を具備し、該フック13−1、13−1はステンレス鋼(例えば、SUS303)からなるフックピン13−2で第1保持部材11の下端部に回動自在に枢支されている。第1保持部材11は樹脂材(例えば、HTPVC)からなり略5角形状で中央部に開口として穴11aが設けられ、その上部にはT字状の樹脂材(例えば、HTPVC)からなるハンガー14が一体的に取付けられている。第2保持部材12は樹脂材(例えば、HTPVC)からなり略5角形状で中央部に開口として穴12aが設けられている。
【0029】
第1保持部材11と第2保持部材12はヒンジ機構13を介して閉じた状態(重ね合わせた状態)で、左右のクランプ15、16で保持されるようになっている。左右のクランプ15、16はそれぞれ樹脂材(例えば、HTPVC)からなり、第1保持部材11と第2保持部材12を重ね合わせた状態でその両側辺が嵌挿される溝15a、16aを有し、その下端が第1保持部材11の両側下端にピン17、18で回動自在に枢支されている。
【0030】
第1保持部材11の第2保持部材12に対向する面の穴11aの外周側には図5に示すようにシールリング(リング状のシール部材)19が取付けられ、第2保持部材12の第1保持部材11に対向する面の穴12aの外周側には図7に示すようにシールリング20が取付けられている。シールリング19、20はゴム材(例えば、シリコンゴム)からなる。また、第2保持部材12の第1保持部材11に対向する面のシールリング20の外側にはOリング29が取付けられている。
【0031】
シールリング19、20は、それぞれ断面が矩形状でその内周側に突起部19a、20aを具備し、第1保持部材11と第2保持部材12との間に被めっき基板を介在させて重ね合わせた状態で突起部19aと突起部20aが被めっき基板の表面を押圧し、密接し、穴11a、12aの外周側に位置する突起部19aと突起部20aとOリング29で囲まれた領域をめっき液の浸水しない水密状態の領域とする。第1保持部材11の第2保持部材12に対向する面には図5及び図8に示すようにシールリング19を突出して、半導体ウエハ等の被めっき基板Wを位置決めするための基板ガイドピン21が穴11aの外周側に計8本立設している。
【0032】
第1保持部材11の第2保持部材12に対向する面の穴11aの外周側には、図5、図9及び図10に示すように導電プレート22が計6個設けられている。この6個の導電プレート22内の3個は導電ピン23を介して図9に示すように被めっき基板Wの一方面(例えば表面)の導電膜(図示せず)に導通するようになっている。導電プレート22内の他の残り3個は導電ピン23を介して図10に示すように被めっき基板Wの一方面(例えば裏面)の導電膜(図示せず)に導通するようになっている。
【0033】
上記6個の導電プレート22の内、被めっき基板Wの一方面(例えば表面)の導電膜に導通する導電プレート22は、配線溝25内を通る絶縁被覆線26を介してハンガー14の一方の端子板27に設けられた電極端子27a、27b、27c(図2参照)に接続され、基板Wの他方面(例えば裏面)の導電部に導通する導電プレート22は、配線溝25内の絶縁被覆線26を介してハンガー14の一方の端子板28に設けられた電極端子28a、28b、28c(図2参照)に接続される。図5、図11において、30は樹脂材(例えば、PVC)からなる配線押さえである。
【0034】
上記構成の基板めっき用治具において、第1保持部材11と第2保持部材12とを開いた状態で、第1保持部材11に立設している8本の基板ガイドピン21に囲まれた領域に被めっき基板Wを載置することにより、被めっき基板Wは第1保持部材11の所定位置に位置決めされる。そして第1保持部材11と第2保持部材12とをヒンジ機構13を介して閉じ、更に左右クランプ15、16をそれぞれ回動させ、第1保持部材11と第2保持部材12の両辺を左右クランプ15、16の溝15a、16aに嵌挿する。これにより、被めっき基板Wは第1保持部材11の所定位置に位置決めされた状態で保持される。
【0035】
また、これにより、シールリング19、20の突起部19a、20aとOリング29で囲まれた領域をめっき液の浸水しない水密状態に密閉すると同時に、被めっき基板Wの該突起部19a、20aより外側がこの密閉空間内に位置し、更に被めっき基板Wの両面の第1保持部材11の穴11aと第2保持部材12の穴12aに対応する部分が該穴11a、12aに露出する。また、6個の導電プレート22の内、基板Wの一方面の導電部に導通する導電プレート22は、ハンガー14の一方の端子板27の電極端子27a、27b、27cに接続され、基板Wの他方面の導電部に導通する導電プレート22はハンガー14の一方の端子板28に設けられた電極端子28a、28b、28cに接続される。
【0036】
図13は上記基板めっき用治具10を用いる基板めっき装置の構成例を示す図である。図示するように、基板めっき装置50はめっき槽51を具備し、該めっき槽51内のめっき液Q中には、半導体ウエハ等の被めっき基板Wを保持した基板めっき用治具10が吊下げられて配置されている。このように基板めっき用治具10をめっき液Qに浸漬した状態でめっき液Qの液面レベルLは図1のLレベルとなる。基板めっき用治具10に保持された被めっき基板Wの両露出面に対向するようにアノード電極52、52が電極保持部材58、58に保持されて配置している。アノード電極52、52は図14に示すように板状で第1保持部材11の穴11a及び第2保持部材12の穴12aに対応した形状の円形で且つ略同じ大きさであり、板状の電極保持部材58、58に取付けられている。
【0037】
被めっき基板Wとアノード電極52、52の間には絶縁材からなる調節板60、60が配置されている。該調節板60、60の中央部には図15に示すように、第1保持部材11の穴11a及び第2保持部材12の穴12aと相似形の円形状の穴60aが形成されている。各アノード電極52、52にはそれぞれめっき電流調節器59、59を介してめっき電源(直流電源)53、53の陽極が接続され、基板めっき用治具10に保持された被めっき基板Wの両面導電膜に端子板27の電極端子27a、27b、27c及び端子板28の電極端子28a、28b、28cを介して電源(直流電源)53、53の陰極に接続し、該各めっき電源53、53からめっき電流調節器59、59で調整されためっき電流を通電することにより、被めっき基板Wの両露出面に同時に金属(例えば、Cu)めっき膜を形成することができる。
【0038】
このとき各電流調節器59、59で被めっき基板Wのそれぞれのめっき面に流れるめっき電流値を調整することにより、金属めっき膜の膜厚を調整することができる。また、調節板60、60の穴60a、60aの大きさを調整することにより、めっき槽51内の電位分布を調節して被めっき基板Wの面上に形成される金属めっき膜の膜厚分布を調節することができる。
【0039】
また、めっき槽51の外側には該めっき槽51から溢れ出ためっき液Qを収容するための外槽57が設けられている。めっき槽51から溢れ外槽57に流れ込んだめっき液Qは、めっき液循環ポンプ54により、恒温ユニット55、フィルタ56を通してめっき槽51の下部から槽内に供給され、めっき液Qは循環する。
【0040】
上記のようなめっき装置50を用いて被めっき基板の両面に同時にめっきすることにより、例えば図16(a)に示すように、スルーホール61、両面に配線溝パターンや穴パターン62を形成し、その表面にバリアー層63、シード層(金属(例えばCu)からなる導電膜層)64を形成した被めっき基板Wの両面に同時にめっきを施し、図16(b)に示すように金属(例えばCu)めっき層65を形成し、該金属めっき層65でスルーホール61、配線溝パターンや穴パターン62を埋め込むことができる。その後、研磨等により、余分な金属めっき層65やシード層64を除去することにより、図16(c)に示すようにスルーホール61、配線溝パターンや穴パターン62を金属めっき層65で埋め込んだ被めっき基板を得る。
【0041】
上記のように、被めっき基板Wの両面に同時に金属めっき膜を施すめっき方法により、予め図16(c)に示すような、スルーホール61、配線溝パターンや穴パターン62を金属めっき層65で埋め込んだ異なるパターンの基板Wを複数枚(ここではW1乃至W6)製造しておき、図17に示すように基板W1乃至W6を積層することにより、例えばIC等の電子部品を容易に製造することができる。
【0042】
図18乃至図21は本発明に係る基板めっき用治具の他の構成例を示す図で、図18は基板めっき用治具で被めっき基板を保持した状態を示す図、図19は図18のA−A断面矢視図、図20は基板めっき用治具の第1保持部材及びハンガー部の構成を示す図、図21は基板めっき用治具の第2保持部材の構成を示す図である。図示するように、本基板めっき用治具70は第1保持部材71と第2保持部材72を具備し、該両保持部材71、72はヒンジ機構85で開閉自在に構成されている。第1保持部材71と第2保持部材72の間に基板Wの上縁部を挟み込み第2保持部材72に取付けた蝶ねじ73を第1保持部材71に形成したねじ孔74に螺合させることにより、第1保持部材71と第2保持部材72で被めっき基板Wを挟持するようになっている。
【0043】
第1保持部材71と第2保持部材72はそれぞれ樹脂材(例えば、HTPVC)からなり、互いに対向する面には被めっき基板Wの表面に形成された導電膜に接触する電極接点75、76が複数(図では3個ずつ)設けられている。第1保持部材71にはハンガー77が一体に設けられ、該ハンガー77の両端上部には通電用の端子板78、79が設けられている。第1保持部材71の電極接点75は電線80で端子板79の電極端子(図示せず)に接続されている。また、第1保持部材71には通電用接点81が設けられ、第2保持部材72には通電用接点81に当接する通電用バネ接点82が設けられている。通電用接点81は電線83で端子板78の電極端子(図示せず)に接続され、通電用バネ接点82は電線84で電極接点76に接続されている。従って、第1保持部材71と第2保持部材72を閉じた場合、複数の電極接点76は電線84、通電用バネ接点82、通電用接点81及び電線83を介して端子板78の電極端子に接続される。
【0044】
図22は上記基板めっき用治具70を用いるめっき装置の構成例を示す図である。図示するように、めっき装置50はめっき槽51を具備し、該めっき槽51内のめっき液Q中には、基板めっき用治具70で上縁部を挟持し保持された被めっき基板Wが配置されている。このように基板めっき用治具70に挟持された被めっき基板Wをめっき液Qに浸漬した状態でめっき液Qの液面レベルLは図18のLレベルとなる。基板めっき用治具70に保持された被めっき基板Wの両露出面に対向するようにアノード電極52、52が配置されている。アノード電極52、52は板状で被めっき基板Wのめっき面の形状に対応した形状でめっき面と略同じ大きさである。
【0045】
被めっき基板Wとアノード電極52、52の間には絶縁材からなる調節板60、60が配置されている。該調節板60、60の中央部には図示は省略するが、被めっき基板Wのめっき面の形状と相似形の穴が形成されている。各アノード電極52、52にはそれぞれめっき電流調節器59、59を介してめっき電源(直流電源)53、53の陽極が接続され、基板めっき用治具70に保持された被めっき基板Wの両面導電膜に端子板78及び端子板79の電極端子を介してめっき電源(直流電源)53、53の陰極が接続され、該各めっき電源53、53からめっき電流調節器59、59で調整されためっき電流値を通電することにより、被めっき基板Wの両露出面に同時に金属(例えば、Cu)めっき膜を形成することができる。
【0046】
このとき各電流調節器59、59で被めっき基板Wのそれぞれのめっき面に流れるめっき電流を調整することによりめっき膜の膜厚を調整することができる。また、調節板60、60の穴の大きさを調整することにより、めっき槽51内の電位分布を調節して被めっき基板Wの面上に形成される金属めっき膜の膜厚分布を調節することができる。
【0047】
また、めっき槽51の外側には該めっき槽51から溢れ出ためっき液Qを収容するための外槽57が設けられている。めっき槽51から溢れ外槽57に流れ込んだめっき液Qは、めっき液循環ポンプ54により、恒温ユニット55、フィルタ56を通してめっき槽51の下部から槽内に供給され、めっき液Qが循環する点は、図13に示す基板めっき装置と同一である。
【0048】
なお、基板めっき用治具70は、ヒンジ機構85を介して第1保持部材71と第2保持部材72を開閉自在に構成しているが、基板の上縁部を挟持するための基板めっき用治具はこのような構成に限定されるものではなく、要は被めっき基板Wの上縁部を挟持する基板挟持部と、該基板挟持部に挟持された被めっき基板Wの表面の導電膜に接触する電極接点を具備する構成であればどんな構成でもよい。
【0049】
また、上記のように被めっき基板をめっき液Qの液面上で支持される基板めっき用治具で保持される被めっき基板Wとしては、剛性を有する板状の被めっき基板に限定されるものではなく、例えば図23に示すように、枠体91に薄膜状の被めっき基板Wを貼り付けた構成のものでもよく、この枠体91の上縁部を被めっき基板Wの上縁部と共に基板めっき用治具90で挟持して保持し、該被めっき基板を枠体91ごと図22に示す構成の基板めっき装置50のめっき槽51のめっき液中に浸漬し、該枠体91に貼り付けられた被めっき基板の両面に金属膜を形成するようにしてもよい。この場合、基板めっき用治具90には被めっき基板Wの両面に形成された導電膜に通電する電極接点(図示せず)を設ける。なお、図23(a)は正面図、図23(b)は図23(a)のA−A断面矢視図である。
【0050】
以上本発明の実施形態を説明したが、本発明は上記実施形態に限定されるものではなく、特許請求の範囲、及び明細書と図面に記載された技術的思想の範囲内において種々の変形が可能である。なお、直接明細書及び図面に記載がない何れの形状や構造や材質であっても、本願発明の作用・効果を奏する以上、本願発明の技術的思想の範囲内である。
【0051】
【発明の効果】
以上説明したように各請求項に記載の発明によれば下記のような優れた効果が得られる。
【0052】
請求項1乃至3に記載の発明によれば、被めっき基板の両面に同時に金属めっき膜を形成することにより、例えば、多層構造からなる半導体デバイスの製造工程における半導体ウエハ面上に形成されたスルーホール、配線溝パターン、穴パターンを金属めっき膜で埋めるためのめっき処理が容易になると共に、そのめっき処理工程を大幅に短縮できる。
【0053】
請求項4に記載の発明によれば、被めっき基板のめっき面に通電される電流値を各々制御することにより、各面に形成されるめっき膜の膜厚を容易に調整することができる。
【0054】
請求項5に記載の発明によれば、基板めっき用治具が被めっき基板の上縁部を挟持する基板挟持部と電極接点を具備するので、被めっき基板の上縁部を基板挟持部で挟持し、該被めっき基板の挟持された部分から下方の所定部分をめっき液に浸漬し、この浸漬された基板両面とアノードの間にめっき電源を印加することにより、基板の両面に同時に金属めっき膜を形成することができる。また、基板の挟持された部分は、めっき液面上にあるから、電極接点部分をめっき液から隔離するためのシールを施す必要がないから、基板めっき用治具も簡単な構成で済む。
【0055】
請求項6に記載の発明によれば、基板めっき装置を請求項5に記載の基板めっき用治具で保持した被めっき基板のめっき液に浸漬した部分の両面にそれぞれ対向してアノード電極を配置した構成とすることにより、簡単な構成で被めっき基板の両面に同時にめっき膜を形成することができる基板めっき装置を提供できる。
【0056】
請求項7に記載の発明によれば、基板保持機構で被めっき基板を保持し、めっき槽のめっき液中に浸漬した場合、該被めっき基板の両面所定領域がめっき液に接液すると共に、密閉領域の導電膜には電極接点が接触して通電できるから、被めっき基板の両面の所定領域に同時に金属めっき膜を形成できる。
【0057】
請求項8に記載の発明によれば、基板保持機構の第1の保持部材と第2の保持部材で被めっき基板を挟持して保持し、めっき槽のめっき液中に浸漬した場合、該被めっき基板の両面所定領域は両保持部材の開口を通してめっき液に接液すると共に、シール部材で密閉された密閉領域の導電膜には電極接点が接触して通電できるから、被めっき基板の両面の所定領域に同時に金属めっき膜を形成できる。
【0058】
請求項9に記載の発明によれば、クランプ機構のクランプ部材で被めっき基板を挟んだ状態で両保持部材の両側部を保持するから、簡単な構成で且つ確実に被めっき基板の保持状態を維持できる。
【0059】
請求項10に記載の発明によれば、第1保持部材の上部には一体的にハンガーを取付けるので、該ハンガーを介して第1保持部材と第2保持部材で挟持された被めっき基板をめっき槽のめっき液中に浸漬した場合、該ハンガーの上端部はめっき液の液面より上に位置するから、上端部に設けた電極端子を通して被めっき基板の導電膜に容易に通電することが可能となる。
【0060】
請求項11に記載の発明によれば、基板めっき装置を請求項7乃至10のいずれか1項に記載の基板めっき用治具で保持した被めっき基板をめっき液に浸漬し、該被めっき基板の両露出面に対向しアノード電極を配置した構成とすることにより、被めっき基板の両露出面に金属めっき膜を同時に形成することができる基板めっき装置を提供できる。
【図面の簡単な説明】
【図1】本発明に係る基板めっき用治具の構成例を示す正面図である。
【図2】本発明に係る基板めっき用治具の構成例を示す平面図である。
【図3】本発明に係る基板めっき用治具の構成例を示す底面図である。
【図4】図1のK−K断面矢視図である。
【図5】図4のA矢視図である。
【図6】図4のB矢視図である。
【図7】図4のC矢視図である。
【図8】図5のD−D断面矢視図である。
【図9】図5のE−E断面矢視図である。
【図10】図1のF−F断面矢視図である。
【図11】図5のG−G断面矢視図である。
【図12】図6のH−H断面矢視図である。
【図13】本発明に係る基板めっき装置の構成を示す図である。
【図14】図13の基板めっき装置のアノード電極及び電極保持部材の形状を示す図である。
【図15】図13の基板めっき装置の調節板の形状を示す図である。
【図16】本発明に係るめっき方法のめっき工程を示す図である。
【図17】本発明に係るめっき方法で製造した基板を用いた電部品の構成例を示す図である。
【図18】本発明に係る基板めっき用治具の構成例を示す正面図である。
【図19】図18のA−A断面図である。
【図20】図18の基板めっき用治具の第1保持部材及びハンガー部の構成を示す図である。
【図21】図18の基板めっき用治具の第2保持部材の構成を示す図である。
【図22】本発明に係る基板めっき装置の構成を示す図である。
【図23】本発明に係る基板めっき装置でめっきする被めっき基板の構成例を示す図である。
【図24】従来の基板めっき用治具の構成を示す正面図である。
【符号の説明】
10 基板めっき用治具
11 第1保持部材
12 第2保持部材
13 ヒンジ機構
14 ハンガー
15 クランプ
16 クランプ
17 ピン
18 ピン
19 シールリング
20 シールリング
21 基板ガイドピン
22 導電プレート
23 導電ピン
25 配線溝
26 絶縁被覆線
27 端子板
28 端子板
29 Oリング
30 配線押え
50 めっき装置
51 めっき槽
52 アノード電極
53 めっき電源
54 めっき液循環ポンプ
55 恒温ユニット
56 フィルタ
57 外槽
58 電極保持部材
59 電流調節器
60 調節板
61 スルーホール
62 配線溝パターンや穴パターン
63 バリアー層
64 シード層
65 金属めっき層
70 基板めっき用治具
71 第1保持部材
72 第2保持部材
73 蝶ねじ
74 ねじ孔
75 電極接点
76 電極接点
77 ハンガー
78 端子板
79 端子板
80 電線
81 通電用接点
82 通電用バネ接点
83 電線
84 電線
85 ヒンジ機構
90 基板めっき用治具
91 枠体
[0001]
TECHNICAL FIELD OF THE INVENTION
According to the present invention, a metal plating film of Cu or the like is formed on the surface of an electronic device substrate such as a semiconductor device or a liquid crystal device, and wiring pattern grooves, through holes, and hole patterns formed on the surface are embedded with the metal plating film. The present invention relates to a substrate plating method, a substrate plating jig, and a substrate plating apparatus which are suitable for the present invention.
[0002]
[Prior art]
Conventionally, as this kind of substrate plating jig, there is one described in Patent Document 1. As shown in FIG. 24, the jig 110 for substrate plating includes a plate-shaped first holding member 111 and a second holding member 112 provided with an annular seal packing 113. The semiconductor wafer 116 is sandwiched and held between the seal packing 111 and the seal packing 113, and an opening 112 a is formed in the inner peripheral portion of the seal packing 113 so that the surface of the semiconductor wafer 116 is exposed, and is held by the first holding member 111. A first energizing member 117 electrically connected to an external electrode is provided on an outer peripheral portion of the semiconductor wafer 116, and a second energizing member 112 is exposed on the surface of the semiconductor wafer 116 held by the first energizing member 117 of the first holding member 111. A second energizing portion 118 is provided which is in contact with both of the conductive films and is sealed by the seal packing 113.
[0003]
To perform plating using the substrate plating jig having the above configuration, the semiconductor wafer held by the substrate plating jig is immersed in the plating solution in a plating tank containing a plating solution, and the semiconductor An anode electrode plate is arranged facing the exposed surface of the wafer, and a plating power is applied between the semiconductor wafer and the anode electrode plate to form a metal plating film on the exposed surface of the semiconductor wafer.
[0004]
In the plating apparatus using the substrate plating jig of the above-described conventional configuration, plating can be performed only on one side of a semiconductor wafer which is a substrate to be plated, and there are the following problems.
{Circle around (1)} When the plating is to be performed on both surfaces of the substrate to be plated, twice the operation time is required.
(2) The in-plane uniformity of the plating film thickness of the substrate to be plated is affected.
{Circle around (3)} A metal plating film cannot be formed on a through hole or a hole pattern of a substrate to be plated.
[0005]
[Patent Document 1]
JP-A-11-172492
[0006]
[Problems to be solved by the invention]
The present invention has been made in view of the above points, and provides a substrate plating method capable of simultaneously plating both surfaces of a substrate to be plated, greatly reducing a plating process, and forming a metal plating film even in a through hole or a hole pattern. It is an object to provide a jig for substrate plating and a substrate plating apparatus.
[0007]
[Means for Solving the Problems]
In order to solve the above-mentioned problem, an invention according to claim 1 is a substrate plating method for forming a metal plating film on a substrate to be plated for an electronic element, wherein the substrate to be plated is immersed in a plating solution and arranged. A plating voltage is applied between both surfaces and the anode electrode, and a metal plating film is simultaneously formed on both surfaces of the substrate to be plated.
[0008]
The invention according to claim 2 is a substrate plating method for forming a metal plating film on a substrate to be plated, wherein the substrate to be plated is arranged in a plating solution by exposing predetermined regions on both surfaces thereof, and A plating voltage is applied between the both exposed surfaces and an anode electrode facing each other, and a metal plating film is simultaneously formed on both exposed surfaces of the substrate to be plated.
[0009]
According to a third aspect of the present invention, in the substrate plating method according to the first or second aspect, a through-hole is formed on the substrate to be plated, and a wiring groove pattern and a hole pattern are formed on both surfaces. Are plated simultaneously from both sides, and the through holes, wiring groove patterns, and hole patterns are buried with a metal film.
[0010]
By simultaneously forming metal plating films on both surfaces of the substrate to be plated as described above, for example, through-holes, wiring groove patterns, and hole patterns formed on a semiconductor wafer surface in a manufacturing process of a semiconductor device having a multilayer structure are formed. The plating process for filling with the metal plating film is facilitated, and the plating process can be significantly shortened.
[0011]
According to a fourth aspect of the present invention, in the substrate plating method according to the first or second aspect, a current value supplied to a plating surface of a substrate to be plated is controlled.
[0012]
As described above, the thickness of the plating film formed on each surface can be easily adjusted by controlling the current value applied to the plating surface of the substrate to be plated.
[0013]
An invention according to claim 5 is a substrate plating jig for immersing and holding a substrate to be plated in a plating solution in a plating tank of a plating apparatus, wherein the jig holds the upper edge of the substrate to be plated. And an electrode contact that is in contact with the conductive film on the surface of the substrate to be plated sandwiched between the substrate sandwiching portions.
[0014]
As described above, since the substrate plating jig includes the substrate holding portion and the electrode contacts, the upper edge portion of the substrate to be plated is held by the substrate holding portion, and a predetermined lower portion from the held portion of the substrate to be plated is provided. By immersing the portion in a plating solution and applying a plating power between both surfaces of the immersed substrate and the anode, metal plating films can be simultaneously formed on both surfaces of the substrate. Since the sandwiched portion of the substrate to be plated is on the plating solution surface, the electrode contacts do not come into contact with the plating solution, so it is necessary to seal the electrode contact portions from the plating solution. Absent.
[0015]
According to a sixth aspect of the present invention, there is provided a plating tank containing a plating solution, and a substrate to be plated held by the substrate plating jig according to the fifth aspect in the plating solution of the plating tank. A substrate plating apparatus is characterized in that a predetermined portion below a portion sandwiched by the above is immersed, and anode electrodes are arranged opposite to both surfaces of the portion of the substrate to be plated immersed in the plating solution.
[0016]
As described above, the substrate plating apparatus has a structure in which the anode electrodes are disposed opposite to both surfaces of the portion of the substrate to be plated held by the substrate plating jig according to claim 5 and which is immersed in the plating solution. With such a configuration, it is possible to simultaneously form plating films on both surfaces of the substrate to be plated.
[0017]
An invention according to claim 7 is a substrate plating jig for immersing and holding a substrate to be plated in a plating solution of a plating tank of a plating apparatus, wherein the substrate to be plated is sealed at a predetermined region of a peripheral portion thereof. And a substrate holding mechanism for exposing and holding a predetermined area on both surfaces of the substrate to be plated, and an electrode contact arranged in the closed area and in contact with the conductive film on the surface of the substrate to be plated. .
[0018]
By configuring the jig for substrate plating as described above, when the substrate to be plated is held by the substrate holding mechanism and immersed in the plating solution in the plating tank, predetermined areas on both sides of the substrate to be plated come into contact with the plating solution. Since the electrodes are in contact with the conductive film in the sealed area and the electricity can be supplied to the conductive area in the closed area, it is possible to perform plating capable of simultaneously forming a metal plating film on predetermined areas on both surfaces of the substrate to be plated.
[0019]
The invention according to claim 8 is the jig for substrate plating according to claim 7, wherein the substrate holding mechanism includes first and second holding members that can be opened and closed via a hinge mechanism. An opening for exposing a predetermined area of the substrate to be plated is provided in each of the holding members of No. 2 and the surface of the substrate to be plated is arranged when both holding members are disposed around the opening and the holding members are sandwiched by the holding members. A sealing member that seals a predetermined region of a peripheral edge portion so as to form a sealed space, and an electrode contact that is in contact with the conductive film on the surface of the substrate to be plated is provided in the sealed space.
[0020]
By configuring the jig for substrate plating as described above, the substrate to be plated is sandwiched and held by the first holding member and the second holding member of the substrate holding mechanism, and immersed in the plating solution in the plating tank. In this case, the predetermined regions on both sides of the substrate to be plated are in contact with the plating solution through the openings of the holding members, and the conductive contacts in the sealed region sealed by the sealing member are in contact with the electrode contacts so that current can flow therethrough. Plating that can simultaneously form a metal plating film on predetermined regions on both surfaces of the substrate can be performed.
[0021]
According to a ninth aspect of the present invention, in the jig for plating a substrate according to the eighth aspect, the first and second holding members hold both sides of the holding member with the substrate to be plated held therebetween. It is characterized by comprising a clamp mechanism having a clamp member.
[0022]
As described above, both sides of both holding members are held in a state where the substrate to be plated is sandwiched by the clamp members of the clamp mechanism. Therefore, the holding state of the substrate to be plated can be reliably maintained with a simple configuration.
[0023]
According to a tenth aspect of the present invention, in the jig for substrate plating according to the eighth or ninth aspect, a hanger is integrally attached to an upper portion of the first holding member, and the electrode terminal that is electrically connected to the electrode contact is connected to the hanger portion. Is provided.
[0024]
Since the hanger is integrally attached to the upper part of the first holding member as described above, the substrate to be plated sandwiched between the first holding member and the second holding member is immersed in the plating solution in the plating tank via the hanger. In this case, since the upper end of the hanger is located above the level of the plating solution, it is possible to easily conduct electricity to the conductive film of the substrate to be plated through the electrode terminals provided at the upper end.
[0025]
According to an eleventh aspect of the present invention, there is provided a plating tank containing a plating solution, and the substrate held by the substrate plating jig according to any one of claims 7 to 10 in the plating solution of the plating tank. A substrate plating apparatus is characterized in that a plating substrate is immersed, and an anode electrode is arranged opposite both exposed surfaces of the substrate to be plated.
[0026]
A substrate to be plated, which is held by the substrate plating apparatus according to any one of claims 7 to 10 as described above, is immersed in a plating solution to face both exposed surfaces of the substrate to be plated. With the configuration in which the anode electrode is disposed, the metal plating films can be simultaneously formed on both exposed surfaces of the substrate to be plated.
[0027]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings. 1 to 12 are views showing a configuration example of a jig for substrate plating according to the present invention. FIG. 1 is a front view, FIG. 2 is a plan view, FIG. 3 is a bottom view, and FIG. 4 is KK of FIG. 5, FIG. 5 is a view from arrow A in FIG. 4, FIG. 6 is a view from arrow B in FIG. 4, FIG. 7 is a view from arrow C in FIG. 4, and FIG. 8 is a view from arrow DD in FIG. FIG. 9, FIG. 9 is a sectional view taken along the line EE of FIG. 5, FIG. 10 is a sectional view taken along the line FF of FIG. 1, FIG. 11 is a sectional view taken along the line GG of FIG. It is an HH sectional arrow view.
[0028]
The substrate plating jig 10 includes a first holding member 11 and a second holding member 12 in the form of a plate, and both holding members 11 and 12 are connected at their lower ends by a hinge mechanism 13 so as to be openable and closable. The hinge mechanism 13 includes two hooks 13-1, 13-1 made of a resin material (for example, HTPVC) fixed to the second holding member 12, and the hooks 13-1, 13-1 are made of stainless steel. The lower end of the first holding member 11 is rotatably supported by a hook pin 13-2 made of, for example, SUS303. The first holding member 11 is made of a resin material (for example, HTPVC), has a substantially pentagonal shape, is provided with a hole 11a as an opening in the center, and has a hanger 14 made of a T-shaped resin material (for example, HTPVC) on its upper part. Are integrally mounted. The second holding member 12 is made of a resin material (for example, HTPVC), has a substantially pentagonal shape, and has a hole 12a as an opening in the center.
[0029]
The first holding member 11 and the second holding member 12 are held by the right and left clamps 15 and 16 in a closed state (overlaid state) via the hinge mechanism 13. The left and right clamps 15, 16 are made of a resin material (for example, HTPVC), and have grooves 15a, 16a into which both sides are inserted when the first holding member 11 and the second holding member 12 are overlapped. The lower end is rotatably supported at the lower end on both sides of the first holding member 11 by pins 17 and 18.
[0030]
As shown in FIG. 5, a seal ring (ring-shaped seal member) 19 is attached to the outer peripheral side of the hole 11 a on the surface of the first holding member 11 facing the second holding member 12. As shown in FIG. 7, a seal ring 20 is attached to the outer peripheral side of the hole 12a on the surface facing the holding member 11. The seal rings 19 and 20 are made of a rubber material (for example, silicon rubber). An O-ring 29 is attached to the surface of the second holding member 12 facing the first holding member 11 outside the seal ring 20.
[0031]
Each of the seal rings 19 and 20 has a rectangular cross section and is provided with protrusions 19a and 20a on the inner peripheral side thereof. The seal rings 19 and 20 are overlapped with the substrate to be plated interposed between the first holding member 11 and the second holding member 12. In the aligned state, the projections 19a and 20a press the surface of the substrate to be plated, come into close contact with each other, and are surrounded by the projections 19a, the projections 20a and the O-ring 29 located on the outer peripheral side of the holes 11a and 12a. Is a watertight area where the plating solution is not immersed. As shown in FIGS. 5 and 8, a seal ring 19 protrudes from a surface of the first holding member 11 facing the second holding member 12, and a substrate guide pin 21 for positioning a substrate W to be plated such as a semiconductor wafer. Are provided on the outer peripheral side of the hole 11a.
[0032]
As shown in FIGS. 5, 9, and 10, a total of six conductive plates 22 are provided on the outer surface of the hole 11a on the surface of the first holding member 11 facing the second holding member 12. Three of the six conductive plates 22 are electrically connected to the conductive film (not shown) on one surface (for example, the surface) of the substrate to be plated W via the conductive pins 23 as shown in FIG. I have. The other three remaining portions in the conductive plate 22 are electrically connected to the conductive film (not shown) on one surface (for example, the back surface) of the substrate W through the conductive pins 23 as shown in FIG. .
[0033]
Of the six conductive plates 22, the conductive plate 22 that is electrically connected to the conductive film on one surface (for example, the surface) of the substrate W to be plated is connected to one of the hangers 14 via the insulating coating wire 26 that passes through the wiring groove 25. The conductive plate 22, which is connected to the electrode terminals 27 a, 27 b, and 27 c (see FIG. 2) provided on the terminal plate 27 and conducts to the conductive portion on the other surface (for example, the back surface) of the substrate W, has an insulating coating in the wiring groove 25. The wires 26 are connected to electrode terminals 28 a, 28 b, 28 c (see FIG. 2) provided on one terminal plate 28 of the hanger 14. 5 and 11, reference numeral 30 denotes a wiring holder made of a resin material (for example, PVC).
[0034]
In the jig for plating a substrate having the above configuration, the first holding member 11 and the second holding member 12 are surrounded by eight board guide pins 21 erected on the first holding member 11 with the first holding member 11 and the second holding member 12 opened. By placing the substrate to be plated W in the region, the substrate to be plated W is positioned at a predetermined position of the first holding member 11. Then, the first holding member 11 and the second holding member 12 are closed via the hinge mechanism 13, and the left and right clamps 15 and 16 are further rotated, respectively, to clamp both sides of the first holding member 11 and the second holding member 12. 15 and 16 are inserted into the grooves 15a and 16a. Thereby, the substrate W to be plated is held in a state where it is positioned at a predetermined position of the first holding member 11.
[0035]
Further, by this, the region surrounded by the projections 19a, 20a of the seal rings 19, 20 and the O-ring 29 is sealed in a water-tight state in which the plating solution is not immersed, and at the same time, from the projections 19a, 20a The outside is located in this sealed space, and portions corresponding to the holes 11a of the first holding member 11 and the holes 12a of the second holding member 12 on both surfaces of the substrate W to be plated are exposed to the holes 11a, 12a. Of the six conductive plates 22, the conductive plate 22 that is electrically connected to the conductive portion on one surface of the substrate W is connected to the electrode terminals 27 a, 27 b, and 27 c of one terminal plate 27 of the hanger 14, and The conductive plate 22, which is electrically connected to the conductive portion on the other surface, is connected to electrode terminals 28a, 28b, 28c provided on one terminal plate 28 of the hanger 14.
[0036]
FIG. 13 is a view showing a configuration example of a substrate plating apparatus using the jig 10 for substrate plating. As shown in the figure, the substrate plating apparatus 50 includes a plating tank 51, and a jig 10 for substrate plating holding a substrate W to be plated such as a semiconductor wafer is suspended in a plating solution Q in the plating tank 51. Are arranged. In this way, the liquid level L of the plating solution Q becomes L level in FIG. 1 in a state where the substrate plating jig 10 is immersed in the plating solution Q. Anode electrodes 52, 52 are held by electrode holding members 58, 58 so as to face both exposed surfaces of the substrate W to be plated held by the substrate plating jig 10. As shown in FIG. 14, the anode electrodes 52, 52 are plate-shaped and have a circular shape and a substantially same size corresponding to the holes 11 a of the first holding member 11 and the holes 12 a of the second holding member 12, respectively. It is attached to the electrode holding members 58, 58.
[0037]
Adjustment plates 60, 60 made of an insulating material are arranged between the substrate W to be plated and the anode electrodes 52, 52. As shown in FIG. 15, a circular hole 60a having a similar shape to the hole 11a of the first holding member 11 and the hole 12a of the second holding member 12 is formed in the center of the adjusting plates 60, 60. The anodes of plating power supplies (DC power supplies) 53, 53 are connected to the anode electrodes 52, 52 via plating current controllers 59, 59, respectively, and both surfaces of the substrate W to be plated held by the substrate plating jig 10. The conductive films are connected to the cathodes of power supplies (DC power supplies) 53, 53 via the electrode terminals 27a, 27b, 27c of the terminal plate 27 and the electrode terminals 28a, 28b, 28c of the terminal plate 28, and the respective plating power supplies 53, 53 By passing the plating current adjusted by the plating current controllers 59, 59, a metal (for example, Cu) plating film can be simultaneously formed on both exposed surfaces of the substrate W to be plated.
[0038]
At this time, the thickness of the metal plating film can be adjusted by adjusting the value of the plating current flowing on each plating surface of the substrate W to be plated by each of the current regulators 59 and 59. Further, by adjusting the size of the holes 60a, 60a of the adjusting plates 60, 60, the potential distribution in the plating tank 51 is adjusted to adjust the film thickness distribution of the metal plating film formed on the surface of the substrate W to be plated. Can be adjusted.
[0039]
Outside the plating tank 51, an outer tank 57 for containing the plating solution Q overflowing from the plating tank 51 is provided. The plating solution Q overflowing from the plating tank 51 and flowing into the outer tank 57 is supplied from the lower part of the plating tank 51 into the tank through a constant temperature unit 55 and a filter 56 by a plating solution circulation pump 54, and the plating solution Q circulates.
[0040]
By plating simultaneously on both surfaces of the substrate to be plated using the plating apparatus 50 as described above, for example, as shown in FIG. 16A, a through hole 61 and a wiring groove pattern or a hole pattern 62 on both surfaces are formed. Plating is simultaneously applied to both surfaces of the substrate W on which the barrier layer 63 and the seed layer (conductive film layer made of metal (for example, Cu)) 64 are formed, as shown in FIG. 3.) A plating layer 65 is formed, and the through-hole 61, the wiring groove pattern and the hole pattern 62 can be embedded in the metal plating layer 65. After that, the excess metal plating layer 65 and the seed layer 64 are removed by polishing or the like, so that the through hole 61, the wiring groove pattern and the hole pattern 62 are buried with the metal plating layer 65 as shown in FIG. Obtain a substrate to be plated.
[0041]
As described above, the through-hole 61, the wiring groove pattern or the hole pattern 62 as shown in FIG. 16C is previously formed by the metal plating layer 65 by the plating method of simultaneously applying a metal plating film to both surfaces of the substrate W to be plated. By manufacturing a plurality of substrates W (here, W1 to W6) having different patterns embedded therein and laminating the substrates W1 to W6 as shown in FIG. 17, an electronic component such as an IC can be easily manufactured. Can be.
[0042]
18 to 21 are diagrams showing another example of the configuration of the jig for plating a substrate according to the present invention. FIG. 18 is a diagram showing a state in which a substrate to be plated is held by the jig for plating a substrate. FIG. 20 is a view showing a configuration of a first holding member and a hanger portion of the jig for substrate plating, and FIG. 21 is a view showing a configuration of a second holding member of the jig for substrate plating. is there. As shown in the figure, the substrate plating jig 70 includes a first holding member 71 and a second holding member 72, and the two holding members 71, 72 are configured to be freely opened and closed by a hinge mechanism 85. The upper edge of the substrate W is sandwiched between the first holding member 71 and the second holding member 72, and the thumb screw 73 attached to the second holding member 72 is screwed into the screw hole 74 formed in the first holding member 71. Thus, the substrate W to be plated is sandwiched between the first holding member 71 and the second holding member 72.
[0043]
The first holding member 71 and the second holding member 72 are each made of a resin material (for example, HTPVC), and electrode contacts 75 and 76 that are in contact with a conductive film formed on the surface of the substrate W to be plated are formed on surfaces facing each other. A plurality (three in the figure) is provided. A hanger 77 is provided integrally with the first holding member 71, and terminal plates 78 and 79 for energization are provided at upper ends of both ends of the hanger 77. The electrode contact 75 of the first holding member 71 is connected to an electrode terminal (not shown) of the terminal plate 79 by an electric wire 80. The first holding member 71 is provided with an energizing contact 81, and the second holding member 72 is provided with an energizing spring contact 82 that contacts the energizing contact 81. The energizing contact 81 is connected to an electrode terminal (not shown) of a terminal plate 78 by an electric wire 83, and the energizing spring contact 82 is connected to an electrode contact 76 by an electric wire 84. Therefore, when the first holding member 71 and the second holding member 72 are closed, the plurality of electrode contacts 76 are connected to the electrode terminals of the terminal plate 78 via the electric wire 84, the energizing spring contact 82, the energizing contact 81, and the electric wire 83. Connected.
[0044]
FIG. 22 is a diagram showing a configuration example of a plating apparatus using the jig 70 for substrate plating. As shown in the figure, the plating apparatus 50 includes a plating tank 51, and a plating solution Q in the plating tank 51 contains a substrate W to be plated held at an upper edge thereof by a substrate plating jig 70. Are located. As described above, the liquid level L of the plating solution Q becomes L level in FIG. 18 in a state where the substrate W to be plated sandwiched between the substrate plating jigs 70 is immersed in the plating solution Q. Anode electrodes 52 and 52 are arranged so as to face both exposed surfaces of substrate P to be plated held by substrate plating jig 70. The anode electrodes 52, 52 are plate-shaped and have a shape corresponding to the shape of the plating surface of the substrate W to be plated, and have substantially the same size as the plating surface.
[0045]
Adjustment plates 60, 60 made of an insulating material are arranged between the substrate W to be plated and the anode electrodes 52, 52. Although not shown, holes having a shape similar to the shape of the plating surface of the substrate W to be plated are formed in the central portions of the adjusting plates 60, 60. The anodes of plating power supplies (DC power supplies) 53, 53 are connected to the respective anode electrodes 52, 52 via plating current regulators 59, 59, respectively. The cathodes of plating power supplies (DC power supplies) 53, 53 were connected to the conductive film via the electrode terminals of the terminal plate 78 and the terminal plate 79, and adjusted by the plating current controllers 59, 59 from the respective plating power supplies 53, 53. By applying a plating current value, a metal (for example, Cu) plating film can be simultaneously formed on both exposed surfaces of the substrate W to be plated.
[0046]
At this time, the thickness of the plating film can be adjusted by adjusting the plating current flowing through the respective plating surfaces of the substrate W to be plated by the current controllers 59 and 59. Further, by adjusting the size of the holes of the adjusting plates 60, 60, the potential distribution in the plating tank 51 is adjusted to adjust the thickness distribution of the metal plating film formed on the surface of the substrate W to be plated. be able to.
[0047]
Outside the plating tank 51, an outer tank 57 for containing the plating solution Q overflowing from the plating tank 51 is provided. The plating solution Q overflowing from the plating bath 51 and flowing into the outer bath 57 is supplied from the lower part of the plating bath 51 into the bath through the constant temperature unit 55 and the filter 56 by the plating solution circulation pump 54, and the plating solution Q circulates. 13 is the same as the substrate plating apparatus shown in FIG.
[0048]
The jig 70 for substrate plating is configured so that the first holding member 71 and the second holding member 72 can be opened and closed via a hinge mechanism 85. However, the jig 70 for substrate plating for holding the upper edge portion of the substrate is provided. The jig is not limited to such a configuration. In short, a jig for holding the upper edge portion of the substrate to be plated W and a conductive film on the surface of the substrate for plating W held between the holding portions for the substrate Any configuration may be used as long as the configuration includes an electrode contact for contacting the electrode.
[0049]
Further, as described above, the substrate W to be plated held by the substrate plating jig supported on the surface of the plating solution Q is limited to a rigid plate-like substrate to be plated. Instead, for example, as shown in FIG. 23, a thin film-shaped substrate W to be plated may be attached to the frame 91, and the upper edge of the frame 91 may be used as the upper edge of the substrate W to be plated. The substrate to be plated is immersed in the plating solution of the plating tank 51 of the substrate plating apparatus 50 having the structure shown in FIG. A metal film may be formed on both sides of the substrate to be plated. In this case, the substrate plating jig 90 is provided with electrode contacts (not shown) for supplying electricity to the conductive films formed on both surfaces of the substrate W to be plated. 23A is a front view, and FIG. 23B is a cross-sectional view taken along the line AA of FIG.
[0050]
Although the embodiment of the present invention has been described above, the present invention is not limited to the above embodiment, and various modifications may be made within the scope of the claims and the technical idea described in the specification and the drawings. It is possible. It should be noted that any shape, structure, or material that is not directly described in the specification and drawings is within the scope of the technical idea of the present invention as long as the effects and effects of the present invention are exhibited.
[0051]
【The invention's effect】
As described above, according to the invention described in each claim, the following excellent effects can be obtained.
[0052]
According to the first to third aspects of the present invention, by forming a metal plating film on both surfaces of a substrate to be plated simultaneously, for example, a through-hole formed on a semiconductor wafer surface in a manufacturing process of a semiconductor device having a multilayer structure. The plating process for filling the hole, the wiring groove pattern, and the hole pattern with the metal plating film becomes easy, and the plating process can be greatly shortened.
[0053]
According to the fourth aspect of the present invention, the thickness of the plating film formed on each surface can be easily adjusted by controlling the current value applied to the plating surface of the substrate to be plated.
[0054]
According to the invention as set forth in claim 5, the jig for substrate plating includes the substrate holding portion for holding the upper edge portion of the substrate to be plated and the electrode contacts, so that the upper edge portion of the substrate to be plated is held by the substrate holding portion. A predetermined portion below the sandwiched portion of the substrate to be plated is immersed in a plating solution, and a plating power is applied between both surfaces of the immersed substrate and the anode to simultaneously perform metal plating on both surfaces of the substrate. A film can be formed. Further, since the sandwiched portion of the substrate is on the plating solution surface, there is no need to provide a seal for isolating the electrode contact portion from the plating solution, so that the substrate plating jig can have a simple configuration.
[0055]
According to the sixth aspect of the present invention, the anode electrodes are arranged so as to oppose both surfaces of the portion of the substrate to be plated held by the substrate plating jig according to the fifth aspect, which is immersed in the plating solution. With this configuration, it is possible to provide a substrate plating apparatus capable of simultaneously forming plating films on both surfaces of a substrate to be plated with a simple configuration.
[0056]
According to the invention as set forth in claim 7, the substrate to be plated is held by the substrate holding mechanism, and when immersed in the plating solution in the plating bath, both surfaces of the substrate to be plated come into contact with the plating solution, Since the electrode contacts can be brought into contact with the conductive film in the sealed area and can be energized, the metal plating film can be simultaneously formed in the predetermined areas on both surfaces of the substrate to be plated.
[0057]
According to the invention as set forth in claim 8, when the substrate to be plated is sandwiched and held between the first holding member and the second holding member of the substrate holding mechanism and immersed in a plating solution in a plating tank, the substrate is not immersed. The predetermined areas on both sides of the plating substrate are in contact with the plating solution through the openings of both holding members, and the conductive contacts in the sealed area sealed by the sealing member can be brought into contact with the electrode contacts so that electricity can be supplied. A metal plating film can be simultaneously formed in a predetermined area.
[0058]
According to the ninth aspect of the present invention, since both sides of both holding members are held in a state where the substrate to be plated is sandwiched by the clamp members of the clamp mechanism, the holding state of the substrate to be plated can be reliably achieved with a simple configuration. Can be maintained.
[0059]
According to the tenth aspect of the present invention, since the hanger is integrally attached to the upper portion of the first holding member, the substrate to be plated sandwiched between the first holding member and the second holding member is plated via the hanger. When immersed in the plating solution in the tank, the upper end of the hanger is located above the level of the plating solution, so it is possible to easily conduct electricity to the conductive film on the substrate to be plated through the electrode terminals provided on the upper end. It becomes.
[0060]
According to the eleventh aspect of the present invention, the substrate to be plated, which is held by the substrate plating apparatus with the jig for substrate plating according to any one of the seventh to tenth aspects, is immersed in a plating solution, and With the configuration in which the anode electrodes are arranged so as to face both the exposed surfaces, a substrate plating apparatus capable of simultaneously forming a metal plating film on both exposed surfaces of the substrate to be plated can be provided.
[Brief description of the drawings]
FIG. 1 is a front view showing a configuration example of a substrate plating jig according to the present invention.
FIG. 2 is a plan view showing a configuration example of a jig for plating a substrate according to the present invention.
FIG. 3 is a bottom view showing a configuration example of a jig for plating a substrate according to the present invention.
FIG. 4 is a sectional view taken along arrow KK of FIG. 1;
FIG. 5 is a view taken in the direction of arrow A in FIG. 4;
6 is a view as viewed in the direction of arrow B in FIG. 4;
FIG. 7 is a view taken in the direction of the arrow C in FIG. 4;
FIG. 8 is a sectional view taken along the line DD in FIG. 5;
FIG. 9 is a sectional view taken along the line EE in FIG. 5;
10 is a sectional view taken along the line FF in FIG. 1;
11 is a sectional view taken along the line GG in FIG.
FIG. 12 is a sectional view taken along the line HH in FIG. 6;
FIG. 13 is a view showing a configuration of a substrate plating apparatus according to the present invention.
FIG. 14 is a diagram showing shapes of an anode electrode and an electrode holding member of the substrate plating apparatus of FIG.
FIG. 15 is a view showing a shape of an adjustment plate of the substrate plating apparatus of FIG.
FIG. 16 is a view showing a plating step of a plating method according to the present invention.
FIG. 17 is a diagram showing a configuration example of an electronic component using a substrate manufactured by the plating method according to the present invention.
FIG. 18 is a front view showing a configuration example of a jig for plating a substrate according to the present invention.
19 is a sectional view taken along line AA of FIG.
FIG. 20 is a view showing a configuration of a first holding member and a hanger part of the jig for plating a substrate of FIG. 18;
FIG. 21 is a view showing a configuration of a second holding member of the jig for plating a substrate of FIG. 18;
FIG. 22 is a diagram showing a configuration of a substrate plating apparatus according to the present invention.
FIG. 23 is a view showing a configuration example of a substrate to be plated by the substrate plating apparatus according to the present invention.
FIG. 24 is a front view showing the configuration of a conventional substrate plating jig.
[Explanation of symbols]
10 Jig for plating on board
11 First holding member
12 Second holding member
13 Hinge mechanism
14 Hanger
15 Clamp
16 Clamp
17 pin
18 pin
19 Seal ring
20 Seal ring
21 Board Guide Pin
22 Conductive plate
23 Conductive pins
25 Wiring groove
26 Insulated wire
27 Terminal board
28 Terminal board
29 O-ring
30 Wiring presser
50 Plating equipment
51 Plating tank
52 Anode electrode
53 Plating power supply
54 Plating solution circulation pump
55 constant temperature unit
56 filters
57 Outer tank
58 Electrode holding member
59 Current controller
60 Adjustment plate
61 Through Hole
62 Wiring groove pattern and hole pattern
63 barrier layer
64 seed layer
65 Metal plating layer
70 Jig for Plating Board
71 First holding member
72 Second holding member
73 Thumbscrew
74 screw hole
75 electrode contacts
76 electrode contacts
77 Hanger
78 terminal board
79 Terminal board
80 electric wires
81 Current-carrying contact
82 Current-carrying spring contact
83 electric wire
84 electric wires
85 Hinge mechanism
90 Jig for substrate plating
91 frame

Claims (11)

電子素子用被めっき基板に金属めっき膜を形成する基板めっき方法において、
前記被めっき基板をめっき液中に浸漬して配置すると共に、該基板の両表面とアノード電極の間にめっき電圧を印加し、該被めっき基板の両面に同時に金属めっき膜を形成することを特徴とする基板めっき方法。
In a substrate plating method for forming a metal plating film on a substrate to be plated for an electronic element,
The substrate to be plated is immersed in a plating solution and arranged, and a plating voltage is applied between both surfaces of the substrate and an anode electrode to form a metal plating film on both surfaces of the substrate to be plated simultaneously. Substrate plating method.
被めっき基板に金属めっき膜を形成する基板めっき方法において、
前記被めっき基板をその両面の所定領域を露出してめっき液中に配置すると共に、該両露出面と該両露出面にそれぞれ対向するアノード電極との間にめっき電圧を印加し、該被めっき基板の両露出面に同時に前記金属めっき膜を形成することを特徴とする基板めっき方法。
In a substrate plating method of forming a metal plating film on a substrate to be plated,
The substrate to be plated is disposed in a plating solution by exposing predetermined regions on both surfaces thereof, and a plating voltage is applied between the both exposed surfaces and the anode electrodes respectively opposed to the both exposed surfaces. A method of plating a substrate, wherein the metal plating films are simultaneously formed on both exposed surfaces of the substrate.
請求項1又は2に記載の基板めっき方法において、
前記被めっき基板にはスルーホール、両面に配線溝パターン、穴パターンが形成されており、該スルーホールや穴パターンを両面から同時にめっきし、該スルーホール、配線溝パターン、穴パターンを金属膜で埋め込むことを特徴とする基板めっき方法。
The substrate plating method according to claim 1 or 2,
The substrate to be plated has a through hole, a wiring groove pattern and a hole pattern formed on both surfaces. The through hole and the hole pattern are simultaneously plated from both surfaces, and the through hole, the wiring groove pattern, and the hole pattern are formed of a metal film. A substrate plating method characterized by being embedded.
請求項1又は2に記載の基板めっき方法において、
前記被めっき基板のめっき面に通電される電流値を各々制御することを特徴とする基板めっき方法。
The substrate plating method according to claim 1 or 2,
A substrate plating method, wherein a current value supplied to a plating surface of the substrate to be plated is controlled.
被めっき基板を、めっき装置のめっき槽のめっき液中に浸漬保持するための基板めっき用治具であって、
前記被めっき基板の上縁部を挟持する基板挟持部と、該基板挟持部に挟持された被めっき基板の表面の導電膜に接触する電極接点を具備することを特徴とする基板めっき用治具。
A jig for plating a substrate for dipping and holding a substrate to be plated in a plating solution in a plating tank of a plating apparatus,
A jig for substrate plating, comprising: a substrate holding portion for holding an upper edge portion of the substrate to be plated; and an electrode contact contacting a conductive film on a surface of the substrate to be plated held by the substrate holding portion. .
めっき液を収容しためっき槽を具備し、該めっき槽のめっき液中に請求項5に記載の基板めっき用治具で保持した被めっき基板を、前記基板挟持部で挟持された部分から下方の所定部分を浸漬し、該被めっき基板のめっき液に浸漬した部分の両面にそれぞれ対向してアノード電極を配置したことを特徴とする基板めっき装置。A plating tank containing a plating solution is provided, and a substrate to be plated held by the substrate plating jig according to claim 5 in the plating solution of the plating tank is positioned downward from a portion held by the substrate holding portion. A substrate plating apparatus, characterized in that a predetermined portion is immersed, and anode electrodes are arranged opposite to both surfaces of the portion of the substrate to be plated, which is immersed in the plating solution. 被めっき基板を、めっき装置のめっき槽のめっき液中に浸漬保持するための基板めっき用治具であって、
被めっき基板をその周縁部の所定領域をシールして密閉すると共に、該被めっき基板の両面所定領域を露出させて保持する基板保持機構と、前記密閉領域に配置され前記被めっき基板表面の導電膜に接触する電極接点を設けたことを特徴とする基板めっき用治具。
A jig for plating a substrate for dipping and holding a substrate to be plated in a plating solution in a plating tank of a plating apparatus,
A substrate holding mechanism for sealing the substrate to be plated by sealing a predetermined region of a peripheral portion thereof and exposing and holding predetermined regions on both surfaces of the substrate to be plated; A jig for plating a substrate, wherein an electrode contact for contacting the film is provided.
請求項7に記載の基板めっき用治具において、
前記基板保持機構はヒンジ機構を介して開閉可能な第1及び第2の保持部材を具備し、
前記第1及び第2の保持部材にはそれぞれ前記被めっき基板の前記所定領域を露出させるための開口を設けると共に、前記該開口の周囲に配設され両保持部材で前記被めっき基板を挟持した際、該被めっき基板の表面に密接し前記周縁部の所定領域をシールして密閉空間とするシール部材を設け、該密閉空間内に前記被めっき基板面の導電膜に接触する電極接点を設けたことを特徴とする基板めっき用治具。
The jig for plating a substrate according to claim 7,
The substrate holding mechanism includes first and second holding members that can be opened and closed via a hinge mechanism,
The first and second holding members are each provided with an opening for exposing the predetermined region of the substrate to be plated, and the substrate to be plated is sandwiched between both holding members disposed around the opening. At this time, a sealing member that is in close contact with the surface of the substrate to be plated and seals a predetermined region of the peripheral portion to form a sealed space is provided, and an electrode contact that contacts a conductive film on the surface of the substrate to be plated is provided in the sealed space. A jig for plating a substrate.
請求項8に記載の基板めっき用治具において、
前記第1と第2の保持部材で前記被めっき基板を挟んだ状態で該両保持部材の両側部を保持するクランプ部材を具備するクランプ機構を具備することを特徴とする基板めっき用治具。
The jig for plating a substrate according to claim 8,
A jig for plating a substrate, comprising: a clamp mechanism having a clamp member for holding both sides of the holding member with the substrate to be plated sandwiched between the first and second holding members.
請求項8又は9に記載の基板めっき用治具において、
前記第1保持部材の上部には一体的にハンガーが取付けられ、前記電極接点に導通する電極端子を該ハンガー部に設けたことを特徴とする基板めっき用治具。
The jig for plating a substrate according to claim 8 or 9,
A jig for plating a substrate, wherein a hanger is integrally mounted on an upper portion of the first holding member, and an electrode terminal for conducting to the electrode contact is provided on the hanger portion.
めっき液を収容しためっき槽を具備し、該めっき槽のめっき液中に請求項7乃至10のいずれか1項に記載の基板めっき用治具で保持した被めっき基板を浸漬し、該被めっき基板の両露出面に対向しアノード電極を配置したことを特徴とする基板めっき装置。A plating tank containing a plating solution is provided, and a substrate to be plated held by the substrate plating jig according to any one of claims 7 to 10 is immersed in the plating solution in the plating tank, and the plating is performed. A substrate plating apparatus, wherein an anode electrode is arranged facing both exposed surfaces of a substrate.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4865102B1 (en) * 2011-04-19 2012-02-01 福井工業株式会社 Substrate support
CN104781453A (en) * 2012-11-14 2015-07-15 株式会社Jcu Substrate plating jig
KR20200056914A (en) 2018-11-15 2020-05-25 에바라코포레이숀 Substrate holder, plating apparatus and substrate plating method
KR20200105403A (en) 2019-02-28 2020-09-07 가부시키가이샤 에바라 세이사꾸쇼 Plating apparatus

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4865102B1 (en) * 2011-04-19 2012-02-01 福井工業株式会社 Substrate support
CN104781453A (en) * 2012-11-14 2015-07-15 株式会社Jcu Substrate plating jig
US20150294894A1 (en) * 2012-11-14 2015-10-15 Jcu Corporation Substrate plating jig
US9865493B2 (en) 2012-11-14 2018-01-09 Jcu Corporation Substrate plating jig
KR102056050B1 (en) * 2012-11-14 2019-12-16 가부시끼가이샤 제이씨유 Substrate plating jig
KR20200056914A (en) 2018-11-15 2020-05-25 에바라코포레이숀 Substrate holder, plating apparatus and substrate plating method
US11232972B2 (en) 2018-11-15 2022-01-25 Ebara Corporation Substrate holder, plating device, and plating method of substrate
KR20200105403A (en) 2019-02-28 2020-09-07 가부시키가이샤 에바라 세이사꾸쇼 Plating apparatus
US11434580B2 (en) 2019-02-28 2022-09-06 Ebara Corporation Plating apparatus

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