JP2004266215A - Substrate processing method, substrate processing device, development processing method and development processing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing method, a substrate processing device, a development processing method and a development processing device capable of optimizing a substrate conveying speed without causing a rear-end collision accident of a substrate on a conveying path of a flat passing system. <P>SOLUTION: At step 1, a substrate G<SB>i</SB>is temporarily stopped for conveying in at a conveying part. In step 2, the substrate G<SB>i</SB>is passed from the conveying part to a guide part to move to a first developer supply part at a high speed. At step 3, the substrate G<SB>i</SB>is temporarily stopped in a solution filling time in the first developer supply part. In step 4, the substrate G<SB>i</SB>is moved from the first developer supply part to a solution drain-off/rinse part at a middle speed. At step 5, the substrate G<SB>i</SB>is temporarily stopped in a solution drain-off time in the solution drain-off/rinse part. At step 6, the substrate G<SB>i</SB>is moved from the solution drain-off/rinse part to a first rinse part at a middle speed, and when passing through the first rinse part, a moving speed is switched to a low speed. At step 7, the substrate G<SB>i</SB>is moved through a second rinse part and a dry part to a sending part at the low speed. At step 8, the substrate G<SB>i</SB>is moved from the sending part to a convey-out part at the high speed. At step 9, the substrate G<SB>i</SB>is temporarily stopped for conveying out to be conveyed out to the outside. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

【０１１１】
この下限移動速度Ｖ_ｌｏｗの値（３６．７ｍｍ／ｓ）は基板Ｇを第１リンス部１２０から送出部１２６まで移動させる際の第４移動速度Ｖ_４の設定値に等しい。つまり、第４移動速度Ｖ_４は本発明の第２基本原則の要件をぎりぎりにクリアしていることになる。したがって、上記のように第１リンス部１２０付近で基板Ｇ_ｉの後端に基板Ｇ_ｉ＋１の前端が接近して来るにしても、その接近距離は最小基板間隔ｄ（２０ｍｍ／ｓ）より小さくなることはない。
【０１１２】
ところで、この現像ユニット（ＤＥＶ）９４における処理条件の中でも、現像時間Ｔ_ｇは現像処理の仕様または品質に最も影響する条件であり、また現像液の種類やリサイクル回数等に応じて頻繁かつ広範囲に変更される条件でもある。かかる現像時間Ｔ_ｇは、上記ステップ▲５▼の説明の中で上述したように、たとえば第１現像液供給部１３４で基板Ｇ_ｉ上に現像液の液盛りを開始してから液切り／リンス部１３８で液切りを開始するまでの時間としてよい。したがって、現像時間Ｔ_ｇの設定値が与えられると、現像中の移動速度つまり第２移動速度Ｖ_２の仮設定値Ｖ_Ｄが下記の式（５）から求められる。
Ｖ_Ｄ＝Ｌ／（Ｔ_ｇ−Ｔ_２） ‥‥‥（５）
【０１１３】
ここで、Ｔ_２は上記液盛り時間であり、Ｌは第１現像液供給部１３４の液盛り停止位置から液切り／リンス部１３８の液切り停止位置まで基板Ｇが移動する距離である。
【０１１４】
この現像ユニット（ＤＥＶ）９４において、上記移動距離Ｌがたとえば２８６８ｍｍであるとすると、図１３の設定例では、現像時間Ｔ_ｇが６０秒、液盛り時間Ｔ_２が１３．２秒であるから、上式（５）より求められる第２移動速度Ｖ_２の仮設定値Ｖ_Ｄは以下のようになる。

【０１１５】
この第２移動速度Ｖ_２の仮設定値Ｖ_Ｄは、下限移動速度Ｖ_ｌｏｗ（３６．７ｍｍ／ｓ）よりも大きく、本発明の第２基本原則の要件を満たしている。したがって、ホストコンピュータ１８０において、この仮設定値Ｖ_Ｄを正規の設定値として登録し、実際の搬送制御に用いてよい。
【０１１６】
ところが、現像時間Ｔ_ｇを長めに、たとえば７８秒に設定すると、上式（３）より求められる第２移動速度Ｖ_２の仮設定値Ｖ_Ｄは３６．５ｍｍ／ｓとなって下限移動速度Ｖ_ｌｏｗ（３６．７ｍｍ／ｓ）よりも低くなってしまい、本発明の第２基本原則の要件を満たさなくなる。この場合は、ホストコンピュータ１８０が、ディスプレイを通じてこの設定値Ｖ_Ｄが不適であることを警告して現像時間Ｔ_ｇの再設定入力を要求するか、あるいは下限移動速度Ｖ_ｌｏｗに対応する現像時間Ｔ_ｇつまり本発明の第２基本原則の条件を満たす上限の現像時間を越える入力値は受け付けないようにインターロックをかけるようにしてもよい。もちろん、上限現像時間の値を表示出力してもよい。また、液盛り時間Ｔ_２についても、上記と同様の設定入力処理を行うことができる。
【０１１７】
上記のように、この実施形態では、搬送路１１２上で複数の被処理基板‥‥，Ｇ_ｉ，Ｇ_ｉ＋１，‥‥を所望のタクトタイムＴ_ｔで少なくとも１回以上の一時停止を含めて順次搬送し、搬送路１１２上で停止または移動中の基板Ｇに対して一連の現像処理工程を行う現像ユニット（ＤＥＶ）９４において、タクトタイムＴ_ｔと基板Ｇが一時停止する停止時間の中の最大停止時間Ｔ_ｓと基板の搬送方向の長さサイズＤと搬送方向における所望の最小基板間隔ｄとに基づいて基板Ｇの下限移動速度Ｖ_ｌｏｗを決定し、搬送路１１２上で基板Ｇを移動させる速度を下限移動速度Ｖ_ｌｏｗ以上の速度に設定する。かかる搬送速度制御によれば、基板長Ｄ、タクトタイムＴ_ｔ、最小基板間隔ｄ、最大停止時間Ｔ_ｓの各条件についてワーク（基板）の仕様やスループット、フットプリント等の観点から所望の値が設定されると、それらの設定値に応じた適確な速度で基板Ｇを移動させ、相前後する基板Ｇ_ｉ，Ｇ_ｉ＋１間の追突事故を確実に防止することができる。
【０１１８】
また、現像時間Ｔ_ｇと液盛り時間Ｔ_２（現像液供給時間Ｔ_ａ）と現像中の移動距離Ｌとに基づいて現像中の移動速度つまり第２移動速度Ｖ_２の仮設定値Ｖ_Ｄを求めて、仮設定値Ｖ_Ｄが下限移動速度Ｖ_ｌｏｗ以上である場合にこれを正規の設定値として採用するようにしているので、基板の追突事故を回避できる基板移動速度の下で所望の現像処理品質を得ることができる。
【０１１９】
次に、この実施形態において基板Ｇの移動速度を安全かつ効率的に減速するための機構および搬送制御方法を説明する。上述したように、現像ユニット（ＤＥＶ）９４では、基板Ｇ_ｉが第１リンス部１２０を通過する間にモジュールＭ_６の搬送機構が移動速度を第３移動速度Ｖ_３（５０．５ｍｍ／ｓ）から第４移動速度Ｖ_４（３６．７ｍｍ／ｓ）に減速する。その際には、当該基板Ｇ_ｉに後続の基板Ｇ_ｉ＋１が追突するのを回避するだけでなく、両基板Ｇ_ｉ，Ｇ_ｉ＋１にそれぞれの移動位置に応じた設定移動速度を与えなければならない。減速後の移動速度（Ｖ_４）が下限移動速度Ｖ_ｌｏｗ付近まで低くなり、しかも最小基板間隔ｄが小さい場合は、両基板Ｇ_ｉ，Ｇ_ｉ＋１が近接して移動するため、両基板Ｇ_ｉ，Ｇ_ｉ＋１に異なる設定移動速度を同時に与えることは非常に難しくなる。この実施形態では、図１４および図１５に示すようにしてこの問題を解決している。
【０１２０】
図１４に示すように、減速の速度切換を行うために、第１リンス部１２０が設けられるモジュールＭ_６の搬送区間が、搬送方向において前段区間Ｍ_６ａと後段区間Ｍ_６ａとに２分割され、両搬送区間Ｍ_６ａ，Ｍ_６ｂに属するコロ１７０は図６に示す仕組みでそれぞれ個別の伝動機構１７２（６ａ），１７２（６ｂ）を介して個別の搬送駆動部１７４（６ａ），１７４（６ｂ）に接続されている。好ましくは、搬送方向において両搬送区間Ｍ_６ａ，Ｍ_６ｂを足し合わせた長さ、つまりモジュールＭ_６の区間長が基板長Ｄとほぼ同じでよい。各搬送区間Ｍ_６ａ，Ｍ_６ｂの区間長Ｅ_ａ，Ｅ_ｂおよび両区間の境界の位置Ｈについては図１５につき後に詳しく述べる。
【０１２１】
図１４につき、この実施形態における減速のための速度切換制御方法を説明する。図１４の（Ａ）に示すように、搬送路１１２上で基板Ｇ_ｉはモジュールＭ_５の区間内の所定位置（液切り停止位置）Ｐ_５から搬送速度Ｖ_３でモジュールＭ６の区間に入ってくる。この時、モジュールＭ_６の前段区間Ｍ_６ａおよび後段区間Ｍ_６ｂの搬送機構は、図１４の（Ａ）に示すように、それぞれの区間Ｍ_６ａ，Ｍ_６ｂに入ってくる基板Ｇ_ｉを搬送速度Ｖ_３で順次迎える。こうして、基板Ｇ_ｉはモジュールＭ_６（Ｍ_６ａ，Ｍ_６ｂ）の区間内にすっぽり入る切るまで搬送速度Ｖ_３で移動してくる。そして、基板Ｇ_ｉの全体がモジュールＭ_６（Ｍ_６ａ，Ｍ_６ｂ）の区間内にすっぽり入る切るとほぼ同時に、図１４の（Ｃ）に示すように、両搬送区間Ｍ_６ａ，Ｍ_６ｂの搬送機構が搬送速度をそれまでの搬送速度Ｖ_３から低速の搬送速度Ｖ_４に同時に切り換える。一方、モジュールＭ_７の区間では、遅くてもこの時には、あるいは定常的にこの区間内の搬送速度を搬送速度Ｖ_４に保っている。こうして、モジュールＭ_６（Ｍ_６ａ，Ｍ_６ｂ）、Ｍ_７の搬送機構により、基板Ｇ_ｉはモジュールＭ_６（Ｍ_６ａ，Ｍ_６ｂ）の中から搬送速度Ｖ_４でモジュールＭ_７の区間へ送り出される。
【０１２２】
そして、図１４の（Ｄ）に示すように、基板Ｇ_ｉの後端がモジュールＭ_６の前段区間Ｍ_６ａを抜け出ると、この時点または直後に前段区間Ｍ_６ａの搬送速度が搬送速度Ｖ_４から搬送速度Ｖ_３に切り換えられる。これにより、図１４の（Ｅ）に示すように、モジュールＭ_５の区間からモジュールＭ_６の前段区間Ｍ_６ａに入ってくる後続の基板Ｇ_ｉ＋１を前の基板Ｇ_ｉに対するのと同じ搬送速度Ｖ_４で迎えることができる。一方、基板Ｇ_ｉの後端がモジュールＭ_６の後段区間Ｍ_６ｂを出ると、この時点または直後に後段区間Ｍ_６ｂの搬送速度が第４搬送速度Ｖ_４から第３搬送速度Ｖ_３に切り換えられる。これにより、図１４の（Ｅ）に示すように、モジュールＭ６の前段区間Ｍ_６ａから後段区間Ｍ_６ｂに入ってくる後続の基板Ｇ_ｉ＋１を前の基板Ｇ_ｉに対するのと同じ第４搬送速度Ｖ_４で迎えることができる。以後も、前の基板Ｇ_ｉに対するのと同じ動作が各部で繰り返される。
【０１２３】
このように、この実施形態では、基板長Ｄにほぼ等しい区間長に設定されたモジュールＭ_６の搬送区間を搬送方向において独立に速度制御の可能な前段区間Ｍ_６ａと後段区間Ｍ_６ｂとに２分割し、両区間Ｍ_６ａ，Ｍ_６ｂの搬送速度をそれぞれ所定のタイミングで第３搬送速度Ｖ_３または第４搬送速度Ｖ_４のいずれかに選択的に切り換えることにより、最小限の搬送スペースで効率よくかつ追突無しに基板の搬送速度を下限移動速度Ｖ_ｌｏｗ以上の所望の値に減速させることができる。
【０１２４】
このような減速の速度制御に際しては、両区間Ｍ_６ａ，Ｍ_６ｂのいずれか（通常は前段区間Ｍ_６ａ）で前の基板Ｇ_ｉを第４移動速度Ｖ_４で送り出している最中に当該区間内に後続の基板Ｇ_ｉ＋１が第３移動速度Ｖ_３で入ってくる、いわば同時乗り入れの事態を避ける必要がある。そのような同時乗り入れの事態が生じるときは、後続の基板Ｇ_ｉ＋１が基板前部が第４移動速度Ｖ_４で搬送されると同時に基板後部が第３移動速度Ｖ_３で搬送されることになり、安定したコロ搬送は行えなくなる。この実施形態では、モジュールＭ_６における前段区間Ｍ_６ａと後段区間Ｍ_６ｂとの間の境界位置Ｈを以下のようにして設定することにより、上記の問題を解決している。
【０１２５】
すなわち、図１５に示すように、基板Ｇ_ｉがモジュールＭ_６の区間内にすっぽり入った状態から第４移動速度Ｖ_４で移動してその基板後端がモジュールＭ_６の前段区間Ｍ_６ａから出るまでに後続の基板Ｇ_ｉ＋１がまだ前段区間Ｍ_６ａに入ってこなければよい。この条件が成立する最も厳しい局面は、減速後の第４移動速度Ｖ_４が下限移動速度Ｖ_ｌｏｗにほぼ等しく、しかも減速前の第３移動速度Ｖ_３が第４移動速度Ｖ_４より僅かに高い場合である。この場合、基板Ｇ_ｉの後端が第４移動速度Ｖ_４で前段区間Ｍ_６ａから出るのと同時に、基板Ｇ_ｉ＋１の前端が最小基板間隔ｄを挟んで第３移動速度Ｖ_３で前段区間Ｍ_６ａに入ってくるので、この瞬間に前段区間Ｍ_６ａの搬送速度を第４移動速度Ｖ_４から第３移動速度Ｖ_３に切り換えればよい。この時の基板Ｇ_ｉの後端位置は、後続基板Ｇ_ｉ＋１の現在位置つまりモジュールＭ_５の区間内の基板停止位置Ｐ_５から基板Ｇ_ｉが近似的に下限移動速度Ｖ_ｌｏｗに等しい移動速度でタクトタイムＴ_ｔの時間をかけて移動した時点における基板Ｇ_ｉの後端位置として求めることができ、この位置を両区間Ｍ_６ａ，Ｍ_６ｂの境界位置Ｈと決定することができる。上記の設定例の場合、基板長Ｄ＝１２５０ｍｍ、最小基板間隔ｄ＝２０ｍｍ、タクトタイムＴ_ｔ＝６０秒、下限移動速度Ｖ_ｌｏｗ＝３６．７ｍｍ／ｓであるから、モジュールＭ_６の前段区間Ｍ_６ａおよび後段区間Ｍ_６ｂのそれぞれの区間長Ｅ_ａ，Ｅ_ｂはＥ_ａ＝９３２ｍｍ、Ｅ_ｂ＝３１８ｍｍと決定される。
【０１２６】
上記した実施形態の現像ユニット（ＤＥＶ）９２における各部の構成は一例であり、現像液供給部、リンス部、乾燥部等の各工程処理部について種々の変形が可能である。上記した実施形態では搬送路１１２をコロ搬送型に構成したが、一定の間隔を空けて一対のベルトを水平方向に敷設してなるベルト搬送型等に構成することも可能である。
【０１２７】
上記した実施形態は現像ユニットまたは現像処理装置に係るものであったが、本発明は現像処理装置以外の基板処理装置にも適用可能であり、たとえば上記のような塗布現像処理システムにおいてはスクラバ洗浄ユニット（ＳＣＲ）４２の平流し装置にも適用可能である。本発明における被処理基板はＬＣＤ基板に限るものではなく、フラットパネルディスプレイ用の各種基板や、半導体ウエハ、ＣＤ基板、ガラス基板、フォトマスク、プリント基板等も可能である。
【０１２８】
【発明の効果】
以上説明したように、本発明の基板処理方法、基板処理装置、現像処理方法または現像処理装置によれば、平流し方式の搬送路上で基板の追突事故を起こさずに基板搬送速度を最適化することができ、さらには基板の搬送速度の減速を効率的かつ安全に行うこともできる。
【図面の簡単な説明】
【図１】本発明の適用可能な塗布現像処理システムの構成を示す平面図である。
【図２】上記塗布現像処理システムにおける熱的処理部の構成を示す側面図である。
【図３】上記塗布現像処理システムにおける処理の手順を示すフローチャートである。
【図４】実施形態における現像ユニットの全体構成を示す正面図である。
【図５】実施形態における現像ユニットの全体構成を示す平面図である。
【図６】実施形態の現像ユニットにおける搬送機構の構成を模式的に示す図である。
【図７】実施形態の現像ユニットにおいて１枚の基板が搬送路上を移動する軌跡を示す図である。
【図８】本発明の第１の基本原則を説明するための図である。
【図９】搬送路上で相前後する基板間に最小基板間隔を設定する例を示す図である。
【図１０】本発明の第２の基本原則（一時停止後の移動速度）を説明するための図である。
【図１１】本発明の第２の基本原則（一時停止前の移動速度）を説明するための図である。
【図１２】実施形態の現像ユニットにおける制御系のシステム構成を示す平面図である。
【図１３】実施形態の現像ユニットにおける各種設定条件の設定例を示す図である。
【図１４】実施形態における減速の速度切換制御を説明するための図である。
【図１５】減速区間の設定方法を示す図である。
【符号の説明】
１０ 塗布現像処理システム
１６（Ｐ／Ｓ） プロセスステーション
９４（ＤＥＶ） 現像ユニット
１１４ 搬入部
１１６ 導入部
１１８ 現像部
１２０ 第１リンス部
１２２ 第２リンス部
１２４ 乾燥部
１２６ 送出部
１２８ 搬出部
１３４ 第１現像液供給部
１３６ 第２現像液供給部
１３８ 液切り／リンス部
１４０，１４６ 現像液ノズル
１４８，１５４，１５６ リンス液ノズル
１５８ エアナイフ
１７０ コロ
１７２ 伝動機構
１７４ 搬送駆動部
１７６ 搬送制御部
１７８ 入力部
１８０ ホストコンピュータ[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a substrate processing method, a substrate processing apparatus, a development processing method, and a development processing apparatus for performing processing such as development processing on a substrate to be processed in a flat flow method.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, in a resist coating and developing processing system in LCD (Liquid Crystal Display) manufacturing, as a developing method or a cleaning method that can advantageously cope with an increase in the size of an LCD substrate, a transport body such as a transport roller or a transport belt is laid horizontally. There is known a so-called flat-flow method in which a developing process or a cleaning process is performed while an LCD substrate is transported on a transport path formed by such a method.
[0003]
In general, in such a flat-flow type substrate processing system, one substrate to be processed is transported over a certain period of time from an upstream loading section to a downstream unloading section on a transport path, and is transported in the middle of the transport. A plurality of process units disposed above, below, or beside the road perform each stage of process processing on the moving or temporarily stopped substrate. Then, in a pipeline system, a large number of substrates are successively loaded onto the transfer path from the loading section at a time interval of the tact time, and are passed through each process processing section one after another at the time interval of the tact time. The same process is repeated at time intervals, and the processed substrates are unloaded one after another from the transport path at the tact time interval.
[0004]
[Problems to be solved by the invention]
In the above-mentioned flat-bed type substrate processing system, it is required to optimally control the substrate transfer speed on the transfer path in accordance with various required specifications such as processing content, quality, throughput, and footprint. For example, in order to improve the processing content and quality, the type, number, processing time, and the like of processing steps on the transport path increase, and the number of situations in which the substrate is temporarily stopped or the transport speed is changed on the transport path also increases. However, if the transfer speed is set incorrectly, there is a possibility that a substrate coming later will collide with the substrate during stop or deceleration. Further, even when the tact time is shortened to improve the throughput, if the transfer speed is not properly set or adjusted, the possibility of a rear-end collision of the substrate on the transfer path also increases. When a rear-end collision of the board occurs, the board has to be broken and discarded, and the production efficiency or the product yield decreases.
[0005]
The present invention has been made in view of the problems of the related art, and a substrate processing method and a substrate processing apparatus capable of optimizing a substrate transport speed without causing a rear-end collision of a substrate on a flat-flow transport path. It is an object to provide a developing method and a developing apparatus.
[0006]
Another object of the present invention is to provide a substrate processing method, a substrate processing apparatus, a development processing method, and a development processing apparatus that can efficiently and safely reduce the transport speed of a substrate on a flat-flow transport path. It is in.
[0007]
[Means for Solving the Problems]
In order to achieve the above object, a first substrate processing method according to the present invention provides a method in which a plurality of substrates to be processed are transferred to a desired tact time (T_t), A substrate processing method for sequentially performing the desired processing on the substrate on the transport path, wherein the tact time (T_t), The length (D) of the substrate in the transport direction, and the desired minimum substrate interval (d) in the transport direction, the lower limit moving speed (V_low) Is determined, and the speed at which the substrate is moved on the transport path is set to the lower limit moving speed (V_low) Set the speed above.
[0008]
Further, the first substrate processing apparatus of the present invention has a transport path in which a transport body for transporting a substrate to be processed placed substantially horizontally is laid in a horizontal direction, and the substrate is moved on the transport path. Transport driving means for driving the transport body, and a predetermined tact time (T_tA) a loading unit for loading the substrate on the transport path, a processing unit for performing a predetermined process on the substrate on the transport path, and an unloading unit for transporting the processed substrate from the transport path. Takt time (T_t), The length (D) of the substrate in the transport direction, and the desired minimum substrate interval (d) in the transport direction, the lower limit moving speed (V_low), And the speed at which the substrate is moved on the transport path is determined by the lower limit moving speed (V)._lowAnd (c) moving speed control means for controlling the above speed.
[0009]
In the first substrate processing method or apparatus, when a substrate is transported on a transport path by continuous movement, the substrate length D and the tact time T_tWhen desired values are set from the viewpoints of substrate specifications, throughput, footprint, and the like for each condition of the minimum substrate distance d, the lower limit moving speed V according to those set values is set._lowThe board can be moved at the above-mentioned safe speed, and the rear-end collision of the board can be reliably prevented.
[0010]
According to one embodiment of the present invention, the lower limit moving speed V_lowIs the tact time T as shown in the following equation._tIs given as the speed of moving by the distance of the substrate length D during
V_low= (D + d) / T_t
[0011]
According to the second substrate processing method of the present invention, a plurality of substrates to be processed are transferred to a desired tact time (T_t), Wherein the substrate is transported sequentially including at least one pause, and a desired process is performed on the substrate stopped or moving on the transport path, wherein the tact time (T_t) And the maximum stop time (T_s), The length (D) of the substrate in the transport direction, and the desired minimum substrate interval (d) in the transport direction, the lower limit moving speed (V_low) Is determined, and the speed at which the substrate is moved on the transport path is set to the lower limit moving speed (V_low) Set the speed above.
[0012]
In addition, the second substrate processing apparatus of the present invention includes a transport path in which a transport body for placing and transporting a substrate to be processed substantially horizontally is laid in a horizontal direction, and the substrate is moved on the transport path. Transport driving means for driving the transport body, and a predetermined tact time (T_tA) a loading unit for loading the substrate on the transport path, a processing unit for performing a predetermined process on the substrate on the transport path, and an unloading unit for transporting the processed substrate from the transport path. Stopping means for temporarily stopping the substrate for a predetermined stop time at one or a plurality of stop positions set on the transport path, and the tact time (T_t) And the maximum stop time (T_s), The length (D) of the substrate in the transport direction, and the desired minimum substrate interval (d) in the transport direction, the lower limit moving speed (V_low), And the speed at which the substrate is moved on the transport path is determined by the lower limit moving speed (V)._lowAnd (c) moving speed control means for controlling the above speed.
[0013]
In the second substrate processing method or apparatus, when the substrates are sequentially transported on the transport path including one or a plurality of temporary stops, the substrate length D and the tact time T_t, Minimum substrate interval d, maximum stop time T_SWhen desired values are set from the viewpoints of substrate specifications, processing contents, throughput, footprint, and the like for each of the conditions, the lower limit moving speed V according to those set values is set._lowThe board can be moved at the above-mentioned safe speed, and the rear-end collision of the board can be reliably prevented.
[0014]
According to one embodiment of the present invention, the lower limit moving speed V_lowIs the tact time T as shown in the following equation._tTo stop time T_sTime (T_t−T_s) Is given as the speed of moving by the distance of the substrate length D.
V_low= (D + d) / (T_t−T_s)
[0015]
According to the third substrate processing method of the present invention, a plurality of substrates to be processed are transferred to a desired tact time (T_t), Wherein the first, second, third, and fourth sections continuous along the transport direction in the transport path are provided. Provided in this order, the transport speed of each of the sections is configured to be independently set or controllable, the transport speed of the first section is set to the first speed, and the transport speed of the fourth section is set. A second speed lower than the first speed is set, and a rear end in the substrate transport direction enters the second section from a time when a front end in the substrate transport direction enters the second section. Until the transfer speed of the second section is controlled to the first speed, the rear end of the substrate enters the second section after the leading end of the substrate enters the third section. Until the transfer speed of the third section is controlled to the first speed, From the first section or immediately after the third section, the respective transport speeds of the second section and the third section are simultaneously switched from the first speed to the second speed, and After the end has left the second section, the transfer speed of the second section is switched from the second speed to the first speed, and after the rear end of the substrate has left the third section, The transport speed in the third section is switched from the second speed to the first speed.
[0016]
Further, the third substrate processing apparatus of the present invention has a structure in which a transfer body for mounting and transferring a substrate to be processed substantially horizontally is laid in a horizontal direction, and the first, second, A transport path having third and fourth sections, and a transport that independently drives the transport body for each of the first, second, third, and fourth sections to transport the substrate on the transport path. Driving means and a predetermined tact time (T_tA) a loading unit for loading the substrate on the transport path, a processing unit for performing a predetermined process on the substrate on the transport path, and an unloading unit for transporting the processed substrate from the transport path. First speed control means for controlling the transport speed of the first section to a first speed; and second speed control means for controlling the transport speed of the fourth section to a second speed lower than the first speed. A speed control unit, wherein the transfer of the second section is performed from a time when a leading end in the transfer direction of the substrate enters the second section to a time when a rear end in the transfer direction of the substrate enters the second section. A third speed control means for controlling the speed to the first speed, and a period from when the front end of the substrate enters the third section to when the rear end of the substrate enters the second section. A fourth speed control means for controlling the transport speed of the third section to the first speed; And immediately after the rear end of the substrate enters the third section or immediately thereafter, the respective transfer speeds of the second section and the third section are simultaneously changed from the first speed to the second speed. A second speed for switching the transport speed of the second section from the second speed to the first speed after the rear end of the substrate exits the second section. Speed switching means, and third speed switching means for switching the transport speed of the third section from the second speed to the first speed after the rear end of the substrate exits the third section. Have.
[0017]
In the third substrate processing method or apparatus, it is possible to efficiently and safely decelerate while passing through the intermediate second and third sections. In order to minimize the transport space for speed switching, it is preferable that the section size obtained by adding the second section and the third section in the transport direction is substantially equal to the length of the substrate. . Further, the substrate is moved from the predetermined position (for example, the stop position) in the first section on the transport path to the lower limit moving speed V._lowTact time T_tThe length of the second section may be set so that the rear end of the substrate reaches the vicinity of the boundary between the second section and the third section during the passage.
[0018]
In the first development processing method of the present invention, a plurality of substrates to be processed are transferred to a desired tact time (T_t), The substrate is sequentially transported including at least one pause, and a developing process of developing the substrate on the transport path during the transport is performed; and a tact time (T) for transporting the substrate into the transport path._t) And the maximum stop time (T_s), The length (D) of the substrate in the transport direction, and the desired minimum substrate interval (d) in the transport direction, the lower limit moving speed (V_low), And the speed at which the substrate is moved on the transport path is determined by the lower limit moving speed (V)._lowAnd (c) setting the substrate moving speed to a higher speed.
[0019]
Further, the first development processing apparatus of the present invention has a transfer path formed by laying a transfer body for mounting and transferring a substrate to be processed substantially horizontally and moving the substrate on the transfer path. Transport driving means for driving the transport body, and a predetermined tact time (T_tA) a substrate loading section for loading the substrate onto the transport path, a development processing section for performing development processing on the substrate on the transport path, and a substrate unloading section for transporting the processed substrate from the transport path. Stopping means for temporarily stopping the substrate for a predetermined stop time at one or a plurality of stop positions set on the transport path, and the tact time (T_t) And the maximum stop time (T_S), The length (D) of the substrate in the transport direction, and the desired minimum substrate interval (d) in the transport direction, the lower limit moving speed (V_low), And the speed at which the substrate is moved on the transport path is determined by the lower limit moving speed (V)._lowAnd (c) moving speed control means for controlling the above speed.
[0020]
In the above-described developing method or apparatus, when the substrate is sequentially transported on the transport path including one or a plurality of temporary stops, the substrate length D and the tact time T_t, Minimum substrate interval d, maximum stop time T_SWhen desired values are set from the viewpoints of substrate specifications, development processing contents, throughput, footprint, and the like for each condition, the lower limit moving speed V according to those set values is set._lowThe board can be moved at the above-mentioned safe speed, and the rear-end collision of the board can be reliably prevented.
[0021]
According to one embodiment of the present invention, the lower limit moving speed V_lowIs the tact time T as shown in the following equation._tTo stop time T_sTime (T_t−T_s) Is given as the speed of moving by the distance of the substrate length D.
V_low= (D + d) / (T_t−T_s)
[0022]
According to one aspect of the present invention, the developing process includes a developing solution supply step of temporarily stopping the substrate at a first stop position on the transport path and supplying a developer to the substrate, and a first stop position on the transport path. A substrate transfer step of moving the substrate at a first speed to a second stop position that is separated by a predetermined distance from the transfer downstream side, and substantially removing the developing solution from the substrate at the second stop position to perform development. Stopping the development. In this case, as one mode of the developer supply step, the developer can be supplied to the substrate stopped at the first stop position from the first nozzle moving at a predetermined speed along the transport path. . Further, as one mode of the development stop step, the substrate may be tilted at the second stop position, and the developer may flow down from the substrate by gravity. As one mode of the development stopping step, a rinsing liquid can be supplied to the substrate stopped at the second stop position from the second nozzle that moves at a predetermined speed along the transport path.
[0023]
According to one aspect of the present invention, the moving speed setting unit starts the supply of the developer to the substrate at the first stop position on the transport path and stops the development at the second stop position. T_gAnd developing time setting means for giving a desired set value, from the start of supply of the developing solution to the substrate at the first stop position on the transport path to the start of movement of the substrate toward the second stop position. Developer supply time (T_s), A developing solution supply time setting means for giving a desired setting value,_g) And developer supply time set value (T_a) And the moving distance (L) from the first stop position to the second stop position, the temporary setting value (V_D), And the provisional set value of the first speed is set to the lower limit moving speed (V_low), The lower limit moving speed (V_lowAnd speed setting value determining means for setting a normal setting value in the above case. In such a configuration, desired development processing quality can be obtained at a substrate moving speed that can avoid a rear-end collision of the substrate. According to a preferred aspect, the temporary speed setting value calculation means calculates the following formula to calculate the first speed temporary setting value (V_D).
V_D= L / (T_D−T_a)
[0024]
According to a second development processing method of the present invention, the first, second, third, and fourth sections that are continuous in the transport direction along the transport direction are provided in this order, and the transport speed of each of the sections is reduced. Independently settable or controllable, the transport speed in the first section is set to a first speed, and the transport speed in the fourth section is set to a second speed lower than the first speed. The transfer speed of the second section is changed from the time when the leading end in the transfer direction of the substrate enters the second section to the time when the rear end in the transfer direction of the substrate enters the second section. And controlling the transport speed in the third section from the time when the front end of the substrate enters the third section to the time when the rear end of the substrate enters the second section. Controlling at the first speed, when the rear end of the substrate enters the third section or immediately thereafter The respective transport speeds of the second section and the third section are simultaneously switched from the first speed to the second speed, and after the rear end of the substrate leaves the second section, the second The transfer speed of the section is switched from the second speed to the first speed, and the transfer speed of the third section is changed from the second speed after the rear end of the substrate passes through the third section. Switch to the first speed.
[0025]
In the third developing apparatus of the present invention, a transport body for transporting a substrate to be processed placed thereon substantially horizontally is laid in a horizontal direction, and the first, second, and third continuous bodies are arranged in the transport direction. And a transport path having a fourth section, and transport drive means for independently driving the transport body for each of the first, second, third, and fourth sections to transport the substrate on the transport path. And a predetermined tact time (T_tA) a substrate loading section for loading the substrate onto the transport path, a development processing section for performing development processing on the substrate on the transport path, and a substrate unloading section for transporting the processed substrate from the transport path. A first speed control unit that controls the transport speed of the first section to a first speed, and a second speed control unit that controls the transport speed of the fourth section to a second speed lower than the first speed. (2) the second section from when the leading end of the substrate in the transfer direction enters the second section to when the rear end of the board in the transfer direction enters the second section; A third speed control means for controlling the transfer speed of the substrate to the first speed, and a third speed control means for controlling a period from when the front end of the substrate enters the third section to when the rear end of the substrate enters the second section. During the fourth period, the transport speed of the third section is controlled to the first speed. From the first speed when the rear end of the substrate enters the third section or immediately after the rear end of the substrate enters the third section. First speed switching means for switching to the second speed, and switching the transport speed in the second interval from the second speed to the first speed after the rear end of the substrate exits the second interval. Second speed switching means, and third speed switching for switching the transport speed in the third section from the second speed to the first speed after the rear end of the substrate has passed through the third section. Means.
[0026]
In the second substrate processing method or apparatus, it is possible to efficiently and safely decelerate while passing through the intermediate second and third sections. In order to minimize the transport space for speed switching, it is preferable that the section size obtained by adding the second section and the third section in the transport direction is substantially equal to the length of the substrate. . Further, the substrate is moved from the predetermined position (for example, the stop position) in the first section on the transport path to the lower limit moving speed V._lowTact time T_tThe length of the second section may be set so that the rear end of the substrate reaches the vicinity of the boundary between the second section and the third section during the passage.
[0027]
According to a preferred aspect, the development stop unit stops the development in the first section, and the rinsing unit supplies the rinsing liquid to the substrate in the second section and / or the third section. A rinsing process is performed, and a drying processing unit performs a drying process by blowing a gas flow for drying on the substrate in the fourth section. The development stop unit is configured to tilt the substrate at the second stop position to cause the developing solution to flow down from the substrate by gravity, and a predetermined position along the transport path with respect to the substrate stopped at the second stop position. A rinsing unit for supplying a rinsing liquid while moving at a speed of.
[0028]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.
[0029]
FIG. 1 shows a coating and developing system as one configuration example to which the developing method and the developing device of the present invention can be applied. The coating and developing system 10 is installed in a clean room, for example, using an LCD substrate as a substrate to be processed, and performs various processes such as cleaning, resist coating, pre-baking, developing and post-baking in a photolithography process in an LCD manufacturing process. Things. The exposure processing is performed by an external exposure apparatus 12 installed adjacent to this system.
[0030]
In this coating and developing system 10, a horizontally long process station (P / S) 16 is disposed at the center, and a cassette station (C / S) 14 and an interface station (I / F) are provided at both ends in the longitudinal direction (X direction). ) 18 are arranged.
[0031]
The cassette station (C / S) 14 is a cassette loading / unloading port of the system 10, and can mount up to four cassettes C capable of accommodating a plurality of substrates G in a horizontal direction, for example, in the Y direction so that the substrates G are stacked in multiple stages. A cassette stage 20 and a transport mechanism 22 for taking the substrate G in and out of the cassette C on the stage 20. The transfer mechanism 22 has a means capable of holding the substrate G, for example, a transfer arm 22a, is operable in four axes of X, Y, Z, and θ. It can be handed over.
[0032]
The process station (P / S) 16 arranges each processing unit on a pair of parallel and opposite lines A and B extending in the system longitudinal direction (X direction) in the order of process flow or process. More specifically, an upstream process line A from the cassette station (C / S) 14 to the interface station (I / F) 18 has a cleaning process unit 24, a first thermal processing unit 26, , A coating process unit 28 and a second thermal processing unit 30 are arranged in a horizontal row. On the other hand, a process line B downstream from the interface station (I / F) 18 to the cassette station (C / S) 14 includes a second thermal processing unit 30, a developing process unit 32, and a decolorizing process. The section 34 and the third thermal processing section 36 are arranged in a horizontal row. In this line configuration, the second thermal processing unit 30 is located at the end of the upstream process line A and at the head of the downstream process line B, and straddles between both lines A and B. ing.
[0033]
An auxiliary transfer space 38 is provided between the process lines A and B, and a shuttle 40 capable of horizontally mounting the substrates G one by one is bidirectionally driven in a line direction (X direction) by a drive mechanism (not shown). You can move to.
[0034]
In the upstream process line A, the cleaning process section 24 includes a scrubber cleaning unit (SCR) 42, and an excimer is located in a location adjacent to the cassette station (C / S) 10 in the scrubber cleaning unit (SCR) 42. A UV irradiation unit (e-UV) 41 is provided. The cleaning unit in the scrubber cleaning unit (SCR) 42 performs brushing cleaning and blow cleaning on the upper surface (the surface to be processed) of the substrate G while transporting the LCD substrate G in the horizontal direction in the line A direction by roller transportation or belt transportation. It has become.
[0035]
The first thermal processing unit 26 adjacent to the downstream side of the cleaning process unit 24 is provided with a vertical transport mechanism 46 at the center along the process line A, and a plurality of units are stacked and arranged in multiple stages on both front and rear sides thereof. are doing. For example, as shown in FIG. 2, the upstream multi-stage unit (TB) 44 includes a pass unit (PASS) 50 for substrate transfer, heating units (DHP) 52 and 54 for dehydration baking, and an adhesion unit. (AD) 56 are stacked in order from the bottom. Here, the pass unit (PASS) 50 is used for transferring the substrate G to and from the scrubber cleaning unit (SCR) 42 side. On the downstream multi-stage unit (TB) 48, a pass unit (PASS) 60 for substrate transfer, cooling units (CL) 62 and 64, and an adhesion unit (AD) 66 are stacked in order from the bottom. Here, the pass unit (PASS) 60 is for transferring the substrate G to and from the coating processing unit 28 side.
[0036]
As shown in FIG. 2, the transport mechanism 46 includes a vertically movable body 70 that can move up and down along a guide rail 68 that extends in a vertical direction, and a swing that can rotate or rotate in the θ direction on the vertically movable body 70. It has a transfer body 72 and a transfer arm or tweezers 74 that can move forward and backward or extend and contract in the front-rear direction while supporting the substrate G on the turning transfer body 72. A driving unit 76 for vertically moving the elevating carrier 70 is provided on the base end side of the vertical guide rail 68, and a driving unit 78 for rotating and driving the swiveling carrier 72 is attached to the elevating carrier 70. A driving unit 80 for driving the reciprocation 74 is attached to the rotary conveyance body 72. Each of the driving units 76, 78, 80 may be constituted by, for example, an electric motor or the like.
[0037]
The transport mechanism 46 configured as described above can access any units in the multi-stage unit (TB) 44, 48 on both sides by moving up and down or turning at high speed, and the shuttle on the auxiliary transport space 38 side. In both cases, the substrate G can be transferred.
[0038]
As shown in FIG. 1, the coating processing unit 28 adjacent to the downstream side of the first thermal processing unit 26 includes a resist coating unit (CT) 82, a reduced-pressure drying unit (VD) 84, and an edge remover unit (ER). 86 are arranged in a line along the process line A. Although not shown, a transport device for loading / unloading the substrates G one by one into the three units (CT) 82, (VD) 84, and (ER) 86 in the process order is provided in the coating process unit 28. In each of the units (CT) 82, (VD) 84, and (ER) 86, each processing is performed for each substrate.
[0039]
The second thermal processing unit 30 adjacent to the downstream side of the coating process unit 28 has the same configuration as the first thermal processing unit 26, and has a vertical type between both process lines A and B. , A multi-stage unit (TB) 88 is provided on the process line A side (last tail), and the other multi-stage unit (TB) 92 is provided on the process line B side (head).
[0040]
Although not shown, for example, in the multi-stage unit (TB) 88 on the process line A side, a pass unit (PASS) for transferring a substrate is placed at the lowest stage, and a heating unit (PREBAKE) for pre-baking is placed thereon. For example, they may be stacked in three layers. In the multi-stage unit (TB) 92 on the process line B side, a pass unit (PASS) for transferring a substrate is placed at the lowest stage, and a cooling unit (COL) is stacked, for example, on one stage. A prebaking heating unit (PREBAKE) may be stacked in, for example, a two-stage stack.
[0041]
The transport mechanism 90 in the second thermal processing unit 30 includes one substrate G in the coating process unit 28 and the development process unit 32 via each pass unit (PASS) of both multi-stage unit (TB) 88 and 92. In addition to the transfer of the substrate G in units, the substrate G can be transferred to and from the shuttle 40 in the auxiliary transfer space 38 and the interface station (I / F) 18 described later.
[0042]
In the downstream process line B, the developing process section 32 includes a so-called flat-flow type developing unit (DEV) 94 that performs a series of developing processing steps while transporting the substrate G in a horizontal posture.
[0043]
A third thermal processing unit 36 is disposed downstream of the developing process unit 32 with the decolorizing process unit 34 interposed therebetween. The decolorization process unit 34 includes an i-ray UV irradiation unit (i-UV) 96 for irradiating the processing surface of the substrate G with i-rays (wavelength 365 nm) to perform the decolorization processing.
[0044]
The third thermal processing unit 36 has the same configuration as the first thermal processing unit 26 and the second thermal processing unit 30, and has a vertical transfer mechanism 100 along the process line B. And a pair of multi-stage unit portions (TB) 98, 102 on both front and rear sides thereof.
[0045]
Although not shown, for example, a pass unit (PASS) is placed at the lowest stage in the upstream multi-stage unit (TB) 98, and a heating unit (POBAKE) for post-baking is stacked on the pass unit (PBAKE), for example, in a three-stage stack. May be stacked. In the multi-stage unit (TB) 102 on the downstream side, a post-baking unit (POBAKE) is placed at the lowest stage, and a pass cooling unit (PASS-COL) for transferring and cooling the substrate is placed on the post-baking unit. The heating units for post-baking (POBAKE) may be stacked on top of each other.
[0046]
The transport mechanism 100 in the third thermal processing unit 36 is connected to the i-line UV irradiation unit (PASS) through the pass unit (PASS) and the pass cooling unit (PASS · COL) of the two multi-stage unit (TB) 98, 102, respectively. Not only can the substrate G be transferred to and from the i-UV) 96 and the cassette station (C / S) 14, but also the substrate G can be transferred to and from the shuttle 40 in the auxiliary transfer space 38 by one sheet. .
[0047]
The interface station (I / F) 18 has a transfer device 104 for exchanging the substrate G with the adjacent exposure device 12, and a buffer stage (BUF) 106 and an extension cooling stage (EXT · COL) around the transfer device 104. ) 108 and peripheral devices 110 are arranged. A stationary buffer cassette (not shown) is placed on the buffer stage (BUF) 106. The extension cooling stage (EXT.COL) 108 is a stage for transferring a substrate having a cooling function, and is used when exchanging the substrate G with the process station (P / S) 16 side. The peripheral device 110 may have a configuration in which, for example, a titler (TITLER) and a peripheral exposure device (EE) are vertically stacked. The transfer device 104 has a transfer arm 104a that can hold the substrate G, and can transfer the substrate G to and from the adjacent exposure device 12, each unit (BUF) 106, (EXT / COL) 108, (TITLER / EE) 110. It has become.
[0048]
FIG. 3 shows a processing procedure in this coating and developing processing system. First, in the cassette station (C / S) 14, the transport mechanism 22 takes out one substrate G from the predetermined cassette C on the stage 20 and excimer in the cleaning process section 24 of the process station (P / S) 16. It is carried into the UV irradiation unit (e-UV) 41 (step S1).
[0049]
The substrate G is subjected to dry cleaning by ultraviolet irradiation in the excimer UV irradiation unit (e-UV) 41 (step S2). This ultraviolet cleaning mainly removes organic substances on the substrate surface. After the completion of the ultraviolet cleaning, the substrate G is transferred to the scrubber cleaning unit (SCR) 42 of the cleaning processing unit 24 by the transport mechanism 22 of the cassette station (C / S) 14.
[0050]
In the scrubber cleaning unit (SCR) 42, as described above, the upper surface (substrate to be processed) of the substrate G is brushed and cleaned while the substrate G is transported in the horizontal direction by the roller transport or belt transport in the horizontal direction in the process line A direction. By performing cleaning, particulate dirt is removed from the substrate surface (Step S3). After the cleaning, the substrate G is rinsed while being transported in a flat flow, and finally, the substrate G is dried using an air knife or the like.
[0051]
The substrate G that has been cleaned in the scrubber cleaning unit (SCR) 42 is carried into the pass unit (PASS) 50 in the upstream multi-stage unit (TB) 44 of the first thermal processing unit 26.
[0052]
In the first thermal processing section 26, the substrate G is rotated by a predetermined unit in a predetermined sequence by the transport mechanism 46. For example, the substrate G is first transferred from the pass unit (PASS) 50 to one of the heating units (DHP) 52, 54, where it is subjected to a dehydration process (step S4). Next, the substrate G is transferred to one of the cooling units (COL) 62, 64, where it is cooled to a constant substrate temperature (step S5). Thereafter, the substrate G is transferred to the adhesion unit (AD) 56, where it is subjected to a hydrophobic treatment (step S6). After the completion of the hydrophobic treatment, the substrate G is cooled to a constant substrate temperature by one of the cooling units (COL) 62 and 64 (Step S7). Finally, the substrate G is moved to the pass unit (PASS) 60 belonging to the downstream multi-stage unit (TB) 48.
[0053]
As described above, in the first thermal processing unit 26, the substrate G is transferred between the upstream multi-stage unit (TB) 44 and the downstream multi-stage unit (TB) 48 via the transfer mechanism 46. You can come and go arbitrarily. The same substrate transfer operation can be performed in the second and third thermal processing units 30 and 36.
[0054]
The substrate G that has undergone the above-described series of thermal or thermal processing in the first thermal processing unit 26 is located on the downstream side of the pass unit (PASS) 60 in the downstream multi-stage unit (TB) 48. Is transferred to the resist coating unit (CT) 82 of the coating process section 28 of FIG.
[0055]
The substrate G is coated with a resist solution on the upper surface (the surface to be processed) of the substrate by a resist coating unit (CT) 82 by, for example, a spin coating method, and is immediately subjected to a drying process by a reduced pressure drying unit (VD) 84 on the downstream side. Then, an unnecessary (unnecessary) resist on the periphery of the substrate is removed by the edge remover unit (ER) 86 adjacent on the downstream side (step S8).
[0056]
The substrate G that has been subjected to the above-described resist coating process passes from the edge remover unit (ER) 86 to the pass unit (PASS) belonging to the upstream multi-stage unit (TB) 88 of the adjacent second thermal processing unit 30. Handed over to
[0057]
In the second thermal processing unit 30, the substrate G is rotated by a predetermined unit in a predetermined sequence by the transport mechanism 90. For example, the substrate G is first moved from the pass unit (PASS) to one of the heating units (PREBAKE), where it is baked after resist application (step S9). Next, the substrate G is moved to one of the cooling units (COL), where it is cooled to a constant substrate temperature (step S10). Thereafter, the substrate G is transferred to the extension cooling stage (EXT.COL) of the interface station (I / F) 18 via the pass unit (PASS) of the downstream multistage unit (TB) 92 or not. ) 108.
[0058]
At the interface station (I / F) 18, the substrate G is carried from the extension cooling stage (EXT · COL) 108 to the peripheral exposure device (EE) of the peripheral device 110, where the resist adhering to the peripheral portion of the substrate G is removed. After undergoing exposure for removal during development, it is sent to the next exposure device 12 (step S11).
[0059]
In the exposure device 12, a predetermined circuit pattern is exposed on the resist on the substrate G. Then, when the substrate G that has been subjected to the pattern exposure is returned from the exposure apparatus 12 to the interface station (I / F) 18 (step S11), the substrate G is first carried into a titler (TITLER) of the peripheral device 110, where a predetermined portion of the substrate is placed. The predetermined information is written in the part (step S12). Thereafter, the substrate G is returned to the extension cooling stage (EXT · COL) 108. The transfer of the substrate G at the interface station (I / F) 18 and the exchange of the substrate G with the exposure device 12 are performed by the transfer device 104.
[0060]
In the process station (P / S) 16, in the second thermal processing section 30, the transport mechanism 90 receives the exposed substrate G from the extension cooling stage (EXT · COL) 108, and the multi-stage unit section on the process line B side (TB) Transfer to the developing process unit 32 via the pass unit (PASS) in the 92.
[0061]
In the developing process section 32, the substrate G received from the pass unit (PASS) in the multi-stage unit (TB) 92 is carried into the developing unit (DEV) 94. In the developing unit (DEV) 94, the substrate G is transported downstream of the process line B in a flat flow manner, and a series of development processing steps of development, rinsing, and drying are performed during the transport (step S13).
[0062]
The substrate G that has been subjected to the development processing in the development processing unit 32 is carried into the decolorization processing unit 34 adjacent on the downstream side, and is subjected to decolorization processing by i-line irradiation there (step S14). The substrate G that has been subjected to the decolorizing process is transferred to the pass unit (PASS) in the upstream multistage unit (TB) 98 of the third thermal processing unit 36.
[0063]
In the third thermal processing section 36, the substrate G is first transferred from the pass unit (PASS) to one of the heating units (POBAKE), where it is subjected to post-baking (step S15). Next, the substrate G is transferred to a pass cooling unit (PASS · COL) in the downstream multi-stage unit (TB) 102, where it is cooled to a predetermined substrate temperature (step S16). The transfer of the substrate G in the third thermal processing section 36 is performed by the transfer mechanism 100.
[0064]
On the cassette station (C / S) 14 side, the transport mechanism 22 receives and receives the substrate G that has completed all the coating and developing processes from the pass cooling unit (PASS · COL) of the third thermal processing unit 36. The loaded substrate G is stored in any one of the cassettes C (step S1).
[0065]
In the coating and developing processing system 10, the present invention can be applied to the developing unit (DEV) 94 of the developing process section 32. Hereinafter, an embodiment in which the present invention is applied to a developing unit (DEV) 94 will be described with reference to FIGS.
[0066]
FIG. 4 and FIG. 5 schematically show the entire configuration inside the developing unit (DEV) 94 according to one embodiment of the present invention. The developing unit (DEV) 94 includes a plurality of, for example, ten modules M forming a continuous transport path 112 extending in the horizontal direction (X direction) along the process line B.₁~ M₁₀Are continuously arranged in a line.
[0067]
These modules M₁~ M₁₀Of the first module M located at the most upstream end₁Is provided with a carry-in section 114. Second module M₂Constitutes the introduction unit 116. Third, fourth and fifth module M₃, M₄, M₅Is provided with a developing unit 118. 6th module M₆Is provided with a first rinsing unit 120, and the seventh module M₇Is provided with a second rinse section 122. Eighth module M₈Is provided with a drying unit 124. 9th module M₉Constitutes the sending unit 126. Last tenth module M₁₀Is provided with a carry-out section 128.
[0068]
The carry-in section 114 has a plurality of lift pins 130 that can move up and down to receive the substrate G handed from an adjacent substrate transport mechanism (not shown) in a horizontal posture and transfer it onto the transport path 112. The unloading section 128 also has a plurality of lift pins 132 that can be lifted and lowered to lift the substrate G in a horizontal posture and hand it to an adjacent substrate transport mechanism (not shown).
[0069]
The introduction section 116 forms a buffer area between the carry-in section 114 and the developing section 118. Each substrate G from the loading unit 114_iIs transported at a high speed to the developing unit 118 via the introduction unit 116 at a stretch, so that a preset tact time T_tSubsequent substrate G carried into carry-in section 114 after a lapse of time (for example, 60 seconds)_{i + 1}And a sufficient spatial separation (distance interval) can be secured. Further, even if the developer scatters from the developing unit 118 to the upstream side of the conveyance, it stops at the introduction unit 116 and does not reach the carry-in unit 114 (does not contaminate).
[0070]
More specifically, the developing unit 118 includes a module M₃, M₄Are provided with a first developer supply section 134 and a second developer supply section 136, respectively.₅Is provided with a liquid draining / rinsing unit 138.
[0071]
The first developer supply unit 134 supplies (liquid builds up) the developer to the substrate G transported from the introduction unit 116 by a paddle method, and is provided above the transport path 112 in the transport direction (X direction). One or more movable developer nozzles 140 are provided. In the illustrated example, the developer nozzle 140 is attached to a nozzle carrier 144 configured to be movable along a guide rail 142 extending in the transport direction, and the nozzle transporter 144 is moved in the transport direction by a driving mechanism (not shown). To be moved. An elevating mechanism (not shown) for moving the developer nozzle 140 up and down may be attached to the nozzle carrier 144.
[0072]
The second developing solution supply unit 136 is for additionally supplying, that is, replenishing, a new developing solution when the developing solution spills from the substrate G being transported. One or a plurality of stationary developer nozzles 146 are arranged.
[0073]
The developer nozzles 140 and 146 of each part have a long nozzle body that covers the substrate G from end to end in the lateral width direction (Y direction) of the transport path 112, and are formed on the nozzle body. The developer is discharged in a substantially band-like or spray-like manner toward the substrate G on the transport path 112 from an infinite number of hole-shaped discharge ports or one or several slit-shaped discharge ports. If necessary, the developer nozzle 146 may also be movable in the transport direction, or the second developer supply unit 136 may be omitted.
[0074]
The liquid draining / rinsing unit 138 is for removing the developing solution from the substrate G to stop the development, and for tilting the substrate G backward or forward in the transport direction to allow the developing solution to flow down by gravity. It has a mechanism (not shown) and one or more rinsing liquid nozzles 148 for spraying a rinsing liquid onto the substrate G to wash away the developing liquid.
[0075]
In the illustrated example, the rinse liquid nozzle 148 is configured to be movable. More specifically, the rinsing liquid nozzle 148 is attached to the nozzle carrier 150 above the conveyance path 112, and the nozzle carrier 150 is moved along a guide rail 152 extending in the conveyance direction by a driving mechanism (not shown). It has a configuration. A lift mechanism (not shown) for moving the rinse liquid nozzle 148 up and down may be attached to the nozzle carrier 150. The rinsing liquid nozzle 148 has a long nozzle body that covers the substrate G from end to end in the left-right width direction (Y direction) of the transport path 112, and countless holes formed in the nozzle body. The rinsing liquid is discharged in a substantially band shape or a spray shape from the discharge port or one or several slit-shaped discharge ports toward the substrate G on the transport path 112.
[0076]
The first rinsing unit 120 and the second rinsing unit 122 are for completely removing the developing solution, foreign matter, dirt, and the like from the substrate G, and each have a long rinsing liquid nozzle 154 at an appropriate position in the transport direction. , 156 are arranged horizontally or one or more. Preferably, the rinsing liquid nozzles 154 and 156 may be arranged above and below the transport path 112 so as to clean not only the upper surface (device forming surface) but also the lower surface or the rear surface of the substrate G. The configuration of the rinsing liquid nozzles 154 and 156 may be the same as or different from that of the rinsing liquid nozzle 148.
[0077]
The drying unit 124 is for removing the rinsing liquid attached to the substrate G after the rinsing process by a gas flow (for example, air) to dry the substrate surface. One or more air knives 158 are arranged horizontally. The air knives 158 may also be arranged above and below the transport path 112 so that the gas flow is applied to both upper and lower surfaces of the substrate G. Preferably, as shown in FIG. 5, the air knife 158 is disposed so as to cover the substrate G from side to side while being inclined at an appropriate angle in the width direction (Y direction) of the transport path 112. With such an oblique arrangement of the air knife 158, the rinsing liquid adhering to the surface of the substrate G is collected at the corner on the rear end side of the substrate G and can be efficiently blown off.
[0078]
The sending section 126 forms a buffer area between the drying section 124 and the unloading section 128. Substrate G that has undergone a series of development processes as described above_iIs transported at a high speed from the sending unit 126 to the unloading unit 128 at a high speed, so that the unloading unit 128 temporarily stops the substrate G in the transport direction for unloading._iAnd tact time T_tSubsequent substrate G that completes the development after the elapse of_{i + 1}And a sufficient spatial separation (distance interval) can be secured.
[0079]
As shown in FIG. 4, in the developing section 118 and the rinsing sections 120 and 122, pans 160 and 162 for collecting the liquid dropped under the transport path 112 are provided, respectively. Drainage pipes 164 and 166 are connected to drainage ports provided at the bottoms of these pans 160 and 162, respectively. The drain pipe 164 on the side of the developing unit 118 communicates with a developer circulation / reuse system (not shown). The drain pipe 166 on the side of the rinsing sections 120 and 122 communicates with a waste liquid processing section (not shown).
[0080]
In the illustrated example, the boundary between the pan 160 on the developing unit 118 side and the pan 162 on the rinsing units 120 and 122 is set below the liquid draining / rinsing unit 138 of the developing unit 118. In the vicinity of the boundary, the developing solution or the rinsing liquid falling from the substrate G in the inclined position at the liquid draining / rinsing section 138 is selectively directed to the pan 160 and the rinsing liquid to the pan 162, respectively. Draining means (not shown) is provided.
[0081]
FIG. 6 schematically shows the configuration of the flat-bed transport mechanism in the developing unit (DEV) 94. In the transport path 112, transport rollers or rollers 170 capable of placing the substrate G substantially horizontally are laid at regular intervals along the process line B (FIG. 4).
[0082]
In this embodiment, the rollers 170 on the transport path 112 are, for example,₁~ M₁₀Each section is divided into a plurality of sections, and each section is independently driven. More specifically, each module M_nThe rollers 170 belonging to the section (n = 1 to 10) are drivingly connected to individual transport driving units 174 (n) via individual transmission mechanisms 172 (n). Each transport driving unit 174 (n) has, for example, an electric motor as a driving source, and rotates the roller 170 via the transmission mechanism 172 (n) by the driving force of the electric motor, so that the roller 170 moves substantially horizontally on the transport path 112. The substrate G in the posture is moved in the direction of the process line B by roller conveyance.
[0083]
The transport control unit 176 is formed of, for example, a microcomputer, and controls individual transport control units 174 (1) to 174 (10) in all sections in order to control each part on the transport path 112 and the entire substrate transport operation. Give a signal. In order to increase the accuracy of the transfer control, preferably, at least one sensor (not shown) for detecting the position of the substrate G on the transfer path 112 is provided, and the output of each sensor is connected to the transfer control unit 176. Have been. The transfer control unit 176 is also connected to a host computer 180 (FIG. 12) as a controller.
[0084]
Next, in the developing unit (DEV) 94, one substrate G_iWill be described in the order of the steps.
[0085]
[Step (1)]
The loading section 114 receives a substrate G from an adjacent substrate transport mechanism (not shown)._iIs received substantially horizontally by the lift pins 130, and then the lift pins 130 are lowered to remove the substrate G_iOn the transport path 112, that is, the module M₁Is transferred onto the roller 170 inside. During this loading operation, the substrate G_iIs a predetermined time set at a predetermined position (on the lift pin 130) in the transport direction, that is, a carry-in time T₁(For example, 15 seconds).
[0086]
[Step (2)]
Substrate G on transport path 112_iIs transferred, the module M₁, M₂, M₃Substrate G immediately by the transfer mechanism_iIs sent to the downstream side of the transport, and the first moving speed V₁At a speed of, for example, 200 mm / s, the sheet is conveyed to the developing section 118 through the introduction section 116. And the substrate G_iIs carried into the first developer supply section 134 of the developing section 118, the module M₃Transfer mechanism is substrate G_iStop the transport of
[0087]
[Step (3)]
In the first developer supply section 134, a predetermined stop time, that is, a liquid filling time T set in advance is set.₂(For example, 13.2 seconds), the developer is discharged while moving the developer nozzle 140 at a predetermined speed in the transport direction or in the opposite direction._iIs applied (poured) on the entire upper surface of the substrate. At this time, the substrate G_iThe spilled developer is collected by a developer pan 160 provided below the transport path 112. The substrate G_iThe developer nozzle 140 may be reciprocated one or more times in order to overcoat the developer, and an arbitrary scanning pattern can be set in the recipe.
[0088]
[Step 4]
In the first developer supply section 134, the liquid filling time T₂Elapses, the module M₃, M₄, M₅Substrate G by the transfer mechanism of_iIs immediately sent to the downstream side of the conveyance, and the second moving speed V₂(For example, 50.5 mm / s) and is conveyed to the drain / rinse section 138. On the way, when passing through the second developer supply unit 136, the developer is supplied to the substrate G being moved from the developer nozzle 146. Substrate G_iIs carried into the drain / rinse section 138, the module M₅Transfer mechanism is substrate G_iStop moving.
[0089]
[Step 5]
In the liquid drain / rinse section 138, a predetermined stop time set in advance, that is, the liquid drain time T₃(For example, 20.2 seconds), the development stop processing is performed. First, the substrate tilting mechanism is activated, and the substrate G_iIs converted from the horizontal posture to the inclined posture, and the substrate G_iThe developer above flows off by gravity. Substrate G_iThe developer which has flowed down from the developer is collected on the side of the developer pan 160 by the drainage distributing means. On the other hand, at an appropriate timing, preferably the substrate G_iAlmost at the same time when the inclination angle of the substrate G reaches the set value, the substrate G in the inclined state is moved while moving the rinsing liquid nozzle 148 at a predetermined speed in the transport direction or in the opposite direction._iRinsing liquid is supplied from above to the substrate G_iReplace the above solution with a rinse solution. At this time, the rinse liquid that has flowed down from the substrate G is collected on the rinse liquid pan 162 side by the drainage distributing means. Finally, the substrate tilting mechanism is_iIs returned from the inclined posture to the horizontal posture.
[0090]
Note that, in this embodiment, the substrate G_iThe time from the start of the liquid filling of the developer to the start of the liquid draining in the liquid draining / rinsing section 138 is defined as a developing time T._gAnd the developing time T_gIs also set in advance.
[0091]
[Step (6)]
The drainage time T in the drainage / rinsing section 138₃Have elapsed, the modules M5, M₆Substrate G by the transfer mechanism of_iIs immediately sent to the downstream side of the conveyance, and the third moving speed V₃(For example, 50.5 mm / s), and is conveyed to the adjacent first rinsing unit 120. In this embodiment, the substrate G_iWhile passing through the first rinsing section 120, the module M₆The transfer mechanism of FIG.₃Lower than the preset fourth moving speed V₄(For example, 36.7 mm / s). In the first rinsing section 120, the substrate G moving on the transport path 112_iA rinsing liquid is sprayed from the rinsing liquid nozzle 154 on the upper and lower surfaces of the_iWash off any remaining or adhering developer. At this time, the substrate G_iThe rinsing liquid flowing down from the rinsing liquid is collected in the rinsing liquid pan 162.
[0092]
[Step 7]
Substrate G_iIs module M₆After exiting the module M₇, M₈, M₉Substrate G by the transfer mechanism of_iWith the fourth moving speed V₄Then, the sheet passes through the second rinsing section 122 and the drying section 124 and is conveyed to the sending section 126. Also in the second rinsing section 122, the substrate G moving on the transport path 112_iIs subjected to the same rinsing treatment as described above. However, the moving speed V of the substrate G₄Is relatively slow, so that the finish cleaning can be performed more carefully than the first rinsing section 120. In the drying unit 124, the substrate G moving on the transport path 112_iBy applying a knife-like sharp gas flow from the air knife 158 to the upper and lower surfaces of the substrate G,_iThe liquid (mainly the rinsing liquid) adhering to the substrate is removed to the rear of the substrate. After all, substrate G_iMoving speed V₄Is set to be slower, so that the gas flow_iTo dry the substrate surface thoroughly.
[0093]
[Step (8)]
Substrate G_iArrives at the sending unit 126, the module M₉, M₁₀Substrate G by the transfer mechanism of_iIs the fourth moving speed V₄From the high-speed fifth moving speed V set in advance₅(For example, 200 mm / s), and the substrate G is_iAt once.
[0094]
[Step (9)]
In the unloading section 128, the substrate G_iArrives, the lift pins 132 waiting beneath the transport path 112 are pushed up to lift the substrate G_iIs lifted in a horizontal posture and transferred to an adjacent substrate transport mechanism (not shown). During this unloading operation, the substrate G_iIs a predetermined time preset at a certain position (on the lift pin 132) in the transport direction, that is, the unloading time T₄(For example, 15 seconds).
[0095]
In the developing unit (DEV) 94, a series of flat-flow processing steps as described above are performed in a tact time T by a pipeline method._tSubstrates G, G at time intervals of_i, G_{i + 1}, G_{i + 2}, ‥‥. What is required here is the substrate G that is successive on the transport path 112._i, G_{i + 1}It is an object of the present invention to optimize the processing contents in each stage of the process processing unit and to maximize the throughput of the entire system without causing a collision (collision) between the two.
[0096]
FIG. 7 shows one substrate G in the developing unit (DEV) 94._iWhen receiving a series of processing steps ((1) to (9)), the substrate G_iAre indicated by the front end position and the rear end position. FIG._{i + 1}A similar trajectory is indicated by a dotted line. The transport distance J from the carry-in position (start point) to the carry-out position (end point position) is also set to a predetermined value (for example, 16900 mm).
[0097]
As described above, in step (1), the substrate G_iIs the loading time T at the loading unit 114₁(For example, for 15 seconds), and temporarily stop in the transport direction. In step (2), the substrate G_iIs a high first moving speed V from the carry-in section 114 to the first developer supply section 134 through the introduction section 116.₁(For example, 200 mm / s). In step (3), the substrate G_iIs the liquid filling time T in the first developer supply section 134.₂(E.g., 13.2 seconds). In step (4), substrate G_iIs the second moving speed V at a medium speed from the first developer supply section 134 to the liquid removal / rinsing section 138.₂(For example, 50.5 mm / s). In step (5), the substrate G_iIs the drainage time T in the drain / rinse section 138₃(For example, 20.5 seconds). In step (6), substrate G_iIs the third moving speed V at a medium speed from the liquid draining / rinsing section 138 to the first rinsing section 120.₃(For example, 50.5 mm / s), and when passing through the first rinsing section 120, the moving speed is changed to a third moving speed V₃To the fourth moving speed V₄(For example, 36.7 mm / s). In step (7), substrate G_iIs the fourth moving speed V through the second rinsing section 122 and the drying section 124 to the sending section 126.₄Move with. In step (8), substrate G_iIs the high fifth moving speed V from the sending unit 126 to the unloading unit 128₅(For example, 200 mm / s). Finally, in step (8), the substrate G_iIs the unloading time T at the unloading section 128₄After being temporarily stopped in the transport direction (for example, 15 seconds), it is carried out of the developing unit (DEV) 94.
[0098]
In the transport sequence of this example, the longest stop time is the drain time T in the drain / rinse unit 138.₃(20.5 seconds), and the lowest moving speed is the fourth moving speed V from the first rinsing unit 120 to the sending unit 126.₄(36.7 mm / s).
[0099]
In this embodiment, the substrate G is provided at various points on the transport path 112 in accordance with the processing contents of the respective processing units._iThere are many situations where the transport is temporarily stopped or the transport speed is changed, and the transport sequence is relatively complicated. The problem here is that the substrate G_iIs large (for example, 1200 mm), the substrate G_iA considerable time difference occurs between the front end position and the rear end position (20 seconds when the moving speed is 40 mm / s), and another substrate G is placed on the same transport path 112._{i + 1}Is the tact time T_tAfter a time interval of 60 seconds (for example, 60 seconds). If the transport speed is incorrectly set, the substrate G during stop or deceleration is stopped._iSubstrate G coming later_{i + 1}May end up crashing.
[0100]
As shown in FIG. 7, in the example of this embodiment, the substrate G_iThe third moving speed V at the medium speed₃(For example, 50.5 mm / s) to the lowest fourth moving speed V₄(36.7 mm / s), the substrate G_iSubstrate G just after the rear end_{i + 1}However, since the transport speed is controlled in the safe zone according to the present invention, it does not lead to a collision.
[0101]
Here, with reference to FIGS. 8 to 11, the basic principle of the present invention relating to the transport speed of the substrate in the flat-flow system will be described.
[0102]
[Basic principle 1]
The length of the substrate G in the transport direction is D, and the tact time T_tAccording to the first basic principle of the present invention, if the substrate G is continuously transferred on the transfer path 112 without stopping once, it is possible to avoid a rear-end collision. The lowest moving speed, that is, the lower limit moving speed V_lowIs given by the following equation (1).
V_low= D / T_t    ‥‥‥ (1)
[0103]
The first basic principle will be described with reference to FIG. The substrate G currently moving on the transport path 112_iAt time t_aAt any position P_aAt time t_aFrom tact time T_tTime t after_cThe following substrate G_{i + 1}Is this position P_aAt the time t_aFrom time t_cBoard G between_iMoves forward by at least the distance of the substrate length D, the position P_aLeaving the board G_{i + 1}Can avoid a rear-end collision. Therefore, the lower limit moving speed V for satisfying this condition is satisfied._lowIs the tact time T_tIs given by the above equation (1) as the speed of moving by the distance of the substrate length D during
[0104]
However, in the ordinary flat flow system, an appropriate minimum substrate interval d is set on the transport path 112 to minimize the possibility of a rear-end collision, and the previous substrate G_iSubstrate G after_{i + 1}Are set closer than the minimum substrate distance d. In this case, as shown in FIG. 9, the length D ′ (D + d) obtained by adding the minimum substrate interval d to the actual substrate length D may be regarded as the substrate length during transport. Equation (2) below may be used.
V_low= (D + d) / T_t    ‥‥‥ (2)
[0105]
[Basic principle 2]
According to the second basic principle of the present invention, the substrate G is transported on the transport path 112 for an arbitrary time T._sLower limit moving speed V to avoid rear-end collision when only temporarily stopping_lowIs given by the following equation (3).
V_low= (D + d) / (T_t−T_s) ‥‥‥ (3)
[0106]
FIG. 10 shows the minimum speed condition after the suspension. For the sake of simplicity, the minimum substrate distance d is assumed to be zero (d = 0). Now, any position P on the transport path 112_aAt time t_aWith substrate G_iHas arrived. At this time t_aFrom tact time T_tTime t_cThe following substrate G_{i + 1}Is this position P_aAt the time t_aTo stop time T_sLater time t_bUntil substrate G_iIs the position P_aAt time t_bFrom time t_cTime remaining until (T_t−T_s) Between the substrates G_iIs moved forward by at least the distance of the substrate length D, the stop position P_aAnd the following substrate G_{i + 1}Can avoid a rear-end collision. Therefore, the lower limit moving speed V for satisfying this condition is satisfied._lowIs the tact time T_tTo stop time T_sTime (T_t−T_s) Is given by the above equation (3) as the speed of moving by the distance of the substrate length D.
[0107]
FIG. 11 shows the minimum speed condition before the suspension. As described above, the minimum substrate interval d is set to zero (d = 0) for the sake of simplicity. Now, at time t_aAnd the substrate G moving on the transport path 112_iIs the stop position P_bPosition P before (upstream side) by substrate length D_aSuppose it is located at At this time t_aFrom tact time T_tTime t after_cSubsequent substrate G_{i + 1}Is this position P_aArrives at_iIs at least the position P_aA position in front of the substrate length D, that is, a stop position P_bIf you have moved up, you can avoid a rear-end collision. However, in this case, the substrate G_iIs the stop position P_bAt time T_sTime (t)_aFrom the start of the stop t_bStop position P by_bMust have arrived. Therefore, the lower limit moving speed V for satisfying this condition is satisfied._lowIs the tact time T_tTo stop time T_sTime (T_t−T_s) Is also given by the above equation (3) as the speed of moving by the distance of the substrate length D.
[0108]
[Basic principle 3]
According to the third basic principle of the present invention, the stop time T when the substrate G is temporarily stopped on the transport path 112_sIs the tact time T_tMust be shorter than This principle is also derived from the above equation (3). That is, the stop time T_sThe lower limit moving speed V_lowIncreases and T_sIs T_tWhen approaching V_lowIs a self-evident principle, because is too large to be realized.
[0109]
FIG. 12 shows a configuration of a control system in this embodiment. The input unit 178 includes, for example, an operation panel having a keyboard, a display, and the like, and inputs various setting values relating to attributes (particularly, size) of the substrate G and processing conditions. The host computer 180 stores the input condition setting values, the condition setting values obtained by predetermined arithmetic processing, and other recipe information in a built-in memory, and develops the developing unit (DEV) according to a predetermined program and condition setting values or recipe information. ) 94, the operations of the carry-in unit 114, the first developer supply unit 134,..., The carry-out unit 128, and the operation of the transport control unit 176 are generally controlled. FIG. 13 shows an example of the condition setting value in this embodiment.
[0110]
In the flat flow system of this embodiment, the substrate G is temporarily stopped at least once on the transport path 112 as described above, and thus the second basic principle of the present invention is applied. In this case, the longest stop time T among the multiple pauses_sLower limit moving speed V obtained from_lowGoverns the minimum speed requirements of the entire system. In the above-described example (FIG. 13), the suspension is performed at four points: the carry-in section 114, the first developer supply section 134, the liquid drain / rinse section 138, and the carry-out section 128._sIs the drainage time T in the drain / rinse section 138₃(20.5 seconds). Therefore, according to the above equation (3), the lower limit moving speed V_lowIs determined as follows.

[0111]
This lower limit moving speed V_low(36.7 mm / s) is the fourth moving speed V when the substrate G is moved from the first rinsing unit 120 to the sending unit 126.₄Is equal to the setting of. That is, the fourth moving speed V₄Means that the requirements of the second basic principle of the present invention have been barely cleared. Therefore, as described above, the substrate G_iSubstrate G at rear end_{i + 1}, The approach distance does not become smaller than the minimum substrate distance d (20 mm / s).
[0112]
Incidentally, among the processing conditions in the developing unit (DEV) 94, the developing time T_gIs the condition that most affects the specifications or quality of the development processing, and is also a condition that is frequently and widely changed according to the type of developer and the number of times of recycling. Such development time T_gAs described above in the description of the step (5), for example, the substrate G_iThe time from the start of the liquid filling of the developing solution to the start of the liquid draining in the liquid draining / rinsing unit 138 may be set. Therefore, the development time T_gIs given, the moving speed during development, that is, the second moving speed V₂Temporary setting value V_DIs obtained from the following equation (5).
V_D= L / (T_g−T₂) ‥‥‥ (5)
[0113]
Where T₂Is the liquid filling time, and L is the distance that the substrate G moves from the liquid stopping position of the first developer supply unit 134 to the liquid stopping position of the liquid draining / rinsing unit 138.
[0114]
In the developing unit (DEV) 94, assuming that the moving distance L is, for example, 2868 mm, in the setting example of FIG._gIs 60 seconds and the filling time T₂Is 13.2 seconds, the second moving speed V obtained from the above equation (5)₂Temporary setting value V_DIs as follows.

[0115]
This second moving speed V₂Temporary setting value V_DIs the lower limit moving speed V_low(36.7 mm / s), which satisfies the requirements of the second basic principle of the present invention. Therefore, in the host computer 180, the temporary setting value V_DMay be registered as a regular set value and used for actual transport control.
[0116]
However, the development time T_gIs set to be longer, for example, 78 seconds, the second moving speed V obtained from the above equation (3)₂Temporary setting value V_DIs 36.5 mm / s and the lower limit moving speed V_low(36.7 mm / s), which does not satisfy the requirements of the second basic principle of the present invention. In this case, the host computer 180 transmits the set value V through the display._DWarning that the developing time is unsuitable, the developing time T_gIs required, or the lower limit travel speed V_lowDevelopment time T corresponding to_gThat is, an interlock may be applied so that an input value exceeding the upper limit of the developing time satisfying the condition of the second basic principle of the present invention is not accepted. Of course, the value of the upper limit development time may be displayed and output. The filling time T₂Can perform the same setting input processing as described above.
[0117]
As described above, in this embodiment, a plurality of substrates ‥‥, G_i, G_{i + 1}, ‥‥ is the desired tact time T_tIn the developing unit (DEV) 94 that sequentially transports the substrate G including at least one or more temporary stops and performs a series of development processing steps on the substrate G stopped or moving on the transport path 112, the tact time T_tAnd the maximum stop time T in the stop time when the substrate G temporarily stops_sAnd the lower limit moving speed V of the substrate G based on the length D of the substrate in the transport direction and the desired minimum substrate distance d in the transport direction._lowIs determined, and the speed at which the substrate G is moved on the transport path 112 is set to the lower limit moving speed V._lowSet the speed above. According to the transfer speed control, the substrate length D and the tact time T_t, Minimum substrate interval d, maximum stop time T_sWhen desired values are set from the viewpoint of work (substrate) specifications, throughput, footprint, and the like for each of the above conditions, the substrate G is moved at an appropriate speed in accordance with those set values, and G_i, G_{i + 1}A rear-end collision accident can be reliably prevented.
[0118]
Further, the developing time T_gAnd filling time T₂(Developer supply time T_a) And the moving distance L during the development, the moving speed during the development, that is, the second moving speed V₂Temporary setting value V_D, And the provisional set value V_DIs the lower limit moving speed V_lowIn the case described above, this is adopted as a regular set value, so that desired development processing quality can be obtained at a substrate moving speed at which a substrate collision accident can be avoided.
[0119]
Next, a mechanism and a transfer control method for safely and efficiently reducing the moving speed of the substrate G in this embodiment will be described. As described above, in the developing unit (DEV) 94, the substrate G_iWhile passing through the first rinsing section 120, the module M₆The transfer mechanism of FIG.₃(50.5 mm / s) to the fourth moving speed V₄(36.7 mm / s). In that case, the substrate G_iSubsequent substrate G_{i + 1}Not only avoids rear-end collision, but also_i, G_{i + 1}Must be given a set moving speed according to each moving position. Moving speed after deceleration (V₄) Is the lower limit moving speed V_lowWhen the minimum substrate distance d is small, the two substrates G_i, G_{i + 1}Move close to each other, the two substrates G_i, G_{i + 1}It is very difficult to give different set moving speeds to the same time. In this embodiment, this problem is solved as shown in FIGS.
[0120]
As shown in FIG. 14, a module M provided with a first rinsing unit 120 for switching the speed of deceleration is provided.₆Is the preceding section M in the transport direction._6aAnd subsequent section M_6aAnd the two transport sections M_6a, M_6bAre connected to the individual transport driving units 174 (6a) and 174 (6b) via the individual transmission mechanisms 172 (6a) and 172 (6b) by the mechanism shown in FIG. Preferably, both transport sections M in the transport direction_6a, M_6b, The module M₆May be substantially the same as the substrate length D. Each transport section M_6a, M_6bSection length E_a, E_bThe position H of the boundary between the two sections will be described later in detail with reference to FIG.
[0121]
A speed switching control method for deceleration in this embodiment will be described with reference to FIG. As shown in FIG. 14A, the substrate G_iIs module M₅Predetermined position (liquid drain stop position) P in the section of₅To transfer speed V₃To enter the section of module M6. At this time, module M₆Previous section M of_6aAnd subsequent section M_6bAs shown in FIG. 14A, the transport mechanism of each section M_6a, M_6bIncoming substrate G_iIs the transport speed V₃We greet sequentially. Thus, the substrate G_iIs module M₆(M_6a, M_6b) The transport speed V until it completely enters the section of₃Come on. And the substrate G_iThe whole is module M₆(M_6a, M_6b)), And almost simultaneously, as shown in FIG. 14C, both transport sections M_6a, M_6bOf the transfer mechanism is set to the previous transfer speed V₃To low transport speed V₄Switch simultaneously. On the other hand, module M₇In the section, the transport speed in this section is set to the transport speed V₄I keep it. Thus, module M₆(M_6a, M_6b), M₇Substrate G by the transfer mechanism of_iIs module M₆(M_6a, M_6bTransfer speed V₄With module M₇It is sent to the section of.
[0122]
Then, as shown in FIG._iThe rear end of the module M₆Previous section M of_6aAt this point or immediately after this,_6aIs the transfer speed V₄To transfer speed V₃Is switched to. As a result, as shown in FIG.₅Module M from the section of₆Previous section M of_6aSubsequent substrate G coming into_{i + 1}To the previous substrate G_iTransport speed V as for₄You can meet at. On the other hand, the substrate G_iThe rear end of the module M₆Subsequent section M_6bAt this point or immediately after this,_6bTransfer speed is the fourth transfer speed V₄To the third transport speed V₃Is switched to. Thereby, as shown in (E) of FIG._6aTo subsequent section M_6bSubsequent substrate G coming into_{i + 1}To the previous substrate G_iThe same fourth transport speed V as₄You can meet at. Subsequent substrate G_iThe same operation as described above is repeated in each part.
[0123]
As described above, in this embodiment, the module M set to the section length substantially equal to the substrate length D₆Preceding section M in which the speed of the transport section can be independently controlled in the transport direction._6aAnd subsequent section M_6bAnd both sections M_6a, M_6bAt a predetermined timing.₃Or fourth transport speed V₄The transfer speed of the substrate can be reduced to the lower limit moving speed V efficiently and without rear-end collision by selectively switching to any one of_lowIt is possible to decelerate to the above desired value.
[0124]
In such deceleration speed control, both sections M_6a, M_6b(Usually the preceding section M_6a) And the previous substrate G_iTo the fourth moving speed V₄Subsequent substrate G in the section during sending out_{i + 1}Is the third moving speed V₃It is necessary to avoid the situation of coming in at the same time, so to speak. When such simultaneous entry occurs, the following board G_{i + 1}Is the fourth moving speed V at the front of the substrate₄At the same time as the third rear speed V₃And the roller cannot be stably conveyed. In this embodiment, the module M₆Previous section M in_6aAnd subsequent section M_6bThe above problem has been solved by setting the boundary position H between
[0125]
That is, as shown in FIG._iIs module M₆From the state where the vehicle completely enters the section₄And the rear end of the substrate is module M₆Previous section M of_6aSubsequent substrate G before exiting_{i + 1}Is still in the previous section M_6aI don't want to come in. The most severe situation in which this condition is satisfied is the fourth moving speed V after deceleration.₄Is the lower limit moving speed V_lowAnd the third moving speed V before deceleration.₃Is the fourth moving speed V₄It is slightly higher. In this case, the substrate G_iIs the fourth moving speed V₄In the previous section M_6aAt the same time as leaving_{i + 1}Of the third moving speed V across the minimum substrate distance d.₃In the previous section M_6aAt this moment, the previous section M_6aTransfer speed to the fourth moving speed V₄To the third moving speed V₃Should be switched to Substrate G at this time_iThe rear end position is_{i + 1}Current position of module M₅Stop position P in the section of₅From substrate G_iIs approximately the lower limit moving speed V_lowTact time at a moving speed equal to_tSubstrate G at the time of moving over_iCan be obtained as the rear end position._6a, M_6bCan be determined as the boundary position H. In the case of the above setting example, the substrate length D = 1250 mm, the minimum substrate interval d = 20 mm, and the tact time T_t= 60 seconds, lower limit moving speed V_low= 36.7 mm / s, the module M₆Previous section M of_6aAnd subsequent section M_6bSection length E of_a, E_bIs E_a= 932mm, E_b= 318 mm.
[0126]
The configuration of each unit in the developing unit (DEV) 92 of the above-described embodiment is an example, and various modifications can be made to each process processing unit such as a developer supply unit, a rinsing unit, and a drying unit. In the above-described embodiment, the transport path 112 is configured as a roller transport type. However, the transport path 112 may be configured as a belt transport type in which a pair of belts are laid horizontally at a predetermined interval.
[0127]
Although the above-described embodiment relates to the developing unit or the developing apparatus, the present invention can be applied to a substrate processing apparatus other than the developing apparatus. The present invention is also applicable to a flat flow device of the unit (SCR) 42. The substrate to be processed in the present invention is not limited to an LCD substrate, but may be various substrates for flat panel displays, semiconductor wafers, CD substrates, glass substrates, photomasks, printed substrates, and the like.
[0128]
【The invention's effect】
As described above, according to the substrate processing method, the substrate processing apparatus, the development processing method, or the development processing apparatus of the present invention, the substrate transfer speed is optimized without causing a rear-end collision of the substrate on the flat-type transfer path. In addition, the substrate transport speed can be efficiently and safely reduced.
[Brief description of the drawings]
FIG. 1 is a plan view showing a configuration of a coating and developing system to which the present invention can be applied.
FIG. 2 is a side view showing a configuration of a thermal processing unit in the coating and developing system.
FIG. 3 is a flowchart showing a procedure of processing in the coating and developing processing system.
FIG. 4 is a front view showing the entire configuration of the developing unit in the embodiment.
FIG. 5 is a plan view illustrating an overall configuration of a developing unit in the embodiment.
FIG. 6 is a diagram schematically illustrating a configuration of a transport mechanism in the developing unit of the embodiment.
FIG. 7 is a diagram illustrating a trajectory in which one substrate moves on a transport path in the developing unit of the embodiment.
FIG. 8 is a diagram for explaining a first basic principle of the present invention.
FIG. 9 is a diagram illustrating an example of setting a minimum substrate interval between successive substrates on a transport path.
FIG. 10 is a diagram for explaining a second basic principle (moving speed after temporary stop) of the present invention.
FIG. 11 is a diagram for explaining a second basic principle (moving speed before temporary stop) of the present invention.
FIG. 12 is a plan view illustrating a system configuration of a control system in the developing unit of the embodiment.
FIG. 13 is a diagram illustrating a setting example of various setting conditions in the developing unit of the embodiment.
FIG. 14 is a diagram for explaining speed switching control of deceleration in the embodiment.
FIG. 15 is a diagram showing a setting method of a deceleration section.
[Explanation of symbols]
10 Coating and developing system
16 (P / S) process station
94 (DEV) Development unit
114 Loading section
116 Introduction
118 Developing section
120 1st rinsing part
122 Second rinse part
124 drying section
126 sending unit
128 Unloading section
134 first developer supply unit
136 second developer supply unit
138 Drainer / Rinse part
140,146 Developer nozzle
148,154,156 Rinse liquid nozzle
158 Air knife
170 rollers
172 transmission mechanism
174 transport drive
176 Transport control unit
178 Input section
180 Host computer

Claims (40)

A substrate processing method for sequentially transporting a plurality of substrates to be processed on a transport path at a desired tact time (T _t ) and performing a desired process on the substrate on the transport path,
Determining a lower limit moving speed (V _low ) of the substrate based on the tact time (T _t ), a length size (D) of the substrate in the transport direction, and a desired minimum substrate interval (d) in the transport direction;
A substrate processing method, wherein a speed at which the substrate is moved on the transport path is set to a speed equal to or higher than the lower limit moving speed (V _low ). The substrate processing method according to claim 1, wherein the lower limit moving speed (V _low ) is obtained by the following equation (1).
V _low = (D + d) / T _t ‥‥‥ (1) A substrate process for sequentially transporting a plurality of substrates to be processed on a transport path at a desired tact time (T _t ) including at least one temporary stop, and performing a desired process on the substrate stopped or moving on the transport path. The method
Based on the tact time (T _t ), the maximum stop time (T _s ) in which the substrate temporarily stops, the length (D) of the substrate in the transport direction, and a desired minimum substrate interval (d) in the transport direction. To determine the lower limit moving speed (V _low ) of the substrate,
A substrate processing method, wherein a speed at which the substrate is moved on the transport path is set to a speed equal to or higher than the lower limit moving speed (V _low ). The substrate processing method according to claim 3, wherein the lower limit moving speed (V _low ) is obtained by the following equation (2).
V _low = (D + d) / (T _t −T _s ) ‥‥‥ (2) A substrate processing method for sequentially transporting a plurality of substrates to be processed on a transport path at a desired tact time (T _t ) and performing a desired process on the substrate on the transport path,
A first, a second, a third and a fourth section continuous in the transport direction in the transport path are provided in this order, and the transport speed of each of the sections can be set or controlled independently,
Setting the transport speed of the first section to a first speed,
Setting the transport speed of the fourth section to a second speed lower than the first speed;
From the time when the front end of the substrate in the transfer direction enters the second section to the time when the rear end of the substrate in the transfer direction enters the second section, the transfer speed of the second section is set to the first section. Control to the speed of
From the time when the leading end of the substrate enters the third section to the time when the rear end of the substrate enters the second section, control the transport speed of the third section to the first speed,
Immediately after or after the rear end of the substrate enters the third section, the respective transport speeds of the second section and the third section are simultaneously switched from the first speed to the second speed. ,
After the rear end of the substrate has left the second section, the transfer speed of the second section is switched from the second speed to the first speed,
A substrate processing method for switching the transport speed of the third section from the second speed to the first speed after the rear end of the substrate exits the third section. When the substrate is transferred from the predetermined position in the first section on the transfer path at the lower limit moving speed (V _low ), the rear end of the substrate is moved to the second section when the tact time (T _t ) elapses. 6. The substrate processing method according to claim 5, wherein the length of the second section is set so as to reach near a boundary between the first section and the third section. 7. The substrate processing method according to claim 5, wherein the substrate is temporarily stopped at the predetermined position in the first section. A transport path in which a transport body for transporting the substrate to be processed mounted thereon substantially horizontally is laid in a horizontal direction,
Transport driving means for driving the transport body to move the substrate on the transport path,
A loading unit for loading the substrate onto the transport path at a predetermined tact time (T _t );
A processing unit for performing a predetermined process on the substrate on the transport path,
An unloading unit that unloads the processed substrate from the transfer path,
Lower limit movement for _obtaining a lower limit moving speed (V _low ) of the substrate based on the tact time (T _t ), a length size (D) of the substrate in the transfer direction, and a desired minimum substrate interval (d) in the transfer direction. Speed calculation means,
A substrate processing apparatus comprising: a moving speed control unit that controls a speed at which the substrate is moved on the transport path to a speed equal to or higher than the lower limit moving speed (V _low ). 9. The substrate processing apparatus according to claim 8, wherein the lower limit moving speed calculating means calculates the following formula (3) to obtain the lower limit moving speed (V _low ).
V _low = (D + d) / T _t ‥‥‥ (3) A transport path in which a transport body for transporting the substrate to be processed mounted thereon substantially horizontally is laid in a horizontal direction,
Transport driving means for driving the transport body to move the substrate on the transport path,
A loading unit for loading the substrate onto the transport path at a predetermined tact time (T _t );
A processing unit for performing a predetermined process on the substrate on the transport path,
An unloading unit that unloads the processed substrate from the transfer path,
Stopping means for temporarily stopping the substrate for a predetermined stop time at one or a plurality of stop positions set on the transport path,
Based on the tact time (T _t ), the maximum stop time (T _s ) for temporarily stopping the substrate, the length (D) of the substrate in the transport direction, and the desired minimum substrate interval (d) in the transport direction. Lower limit moving speed calculating means for obtaining the lower limit moving speed (V _low ) of the substrate by
A substrate processing apparatus comprising: a moving speed control unit that controls a speed at which the substrate is moved on the transport path to a speed equal to or higher than the lower limit moving speed (V _low ). The substrate processing apparatus according to claim 10, wherein the lower limit moving speed calculating means calculates the lower limit moving speed (V _low ) by calculating the following equation (4).
V _low = (D + d) / (T _t −T _s ) ‥‥‥ (4) A transfer path having a first, second, third and fourth sections continuous along the transfer direction, in which a transfer body for transferring the transfer of the substrate to be processed substantially horizontally is laid;
Transport driving means for independently driving the transport body for each of the first, second, third, and fourth sections to transport the substrate on the transport path;
A loading unit for loading the substrate onto the transport path at a predetermined tact time (T _t );
A processing unit for performing a predetermined process on the substrate on the transport path,
An unloading unit that unloads the processed substrate from the transfer path,
First speed control means for controlling the transport speed of the first section to a first speed;
Second speed control means for controlling the transport speed of the fourth section to a second speed lower than the first speed;
From the time when the front end of the substrate in the transfer direction enters the second section to the time when the rear end of the substrate in the transfer direction enters the second section, the transfer speed of the second section is set to the first section. Third speed control means for controlling to a speed of
And controlling the transport speed of the third section to the first speed from the time when the leading end of the substrate enters the third section to the time when the rear end of the substrate enters the second section. 4 speed control means;
Immediately after or immediately after the rear end of the substrate enters the third section, the transport speeds of the second section and the third section are simultaneously switched from the first speed to the second speed. First speed switching means;
Second speed switching means for switching the transport speed of the second section from the second speed to the first speed after the rear end of the substrate exits the second section;
And a third speed switching means for switching the transport speed of the third section from the second speed to the first speed after the rear end of the substrate exits the third section. 13. The substrate processing apparatus according to claim 12, wherein a section obtained by adding the second section and the third section in the transport direction has a size substantially equal to a length of the substrate. When the substrate is transferred from the predetermined position in the first section on the transfer path at the lower limit moving speed (V _low ), the rear end of the substrate is moved to the second section when the tact time (T _t ) elapses. 14. The substrate processing apparatus according to claim 12, wherein a length of the second section is set so as to reach near a boundary between the first section and the third section. A developing step of sequentially transporting a plurality of substrates to be processed on the transport path at a desired tact time (T _t ) including at least one temporary stop, and performing a development process on the substrate on the transport path during the transport; ,
The tact time (T _t ) at which the substrate is loaded into the transport path, the maximum stop time (T _S ) at which the substrate temporarily stops, the length (D) of the substrate in the transport direction, and a desired value in the transport direction. A lower limit moving speed determining step of determining a lower limit moving speed (V _low ) of the substrate based on the minimum substrate interval (d);
A substrate moving speed setting step of setting a speed at which the substrate is moved on the transport path to a speed higher than the lower limit moving speed (V _low ). The developing method according to claim 15, wherein the lower limit moving speed (V _low ) is obtained by the following equation (5).
V _low = (D + d) / (T _t −T _s ) ‥‥‥ (5) The developing step,
A developer supply step of temporarily stopping the substrate at a first stop position on the transport path and supplying a developer to the substrate;
A substrate transfer step of moving the substrate at a first speed from the first stop position to a second stop position separated by a predetermined distance from the first stop position to a transfer downstream side on the transfer path;
17. The development processing method according to claim 15, further comprising the step of: substantially removing the developing solution from the substrate at the second stop position to stop the development. The developing solution supply step includes a step of supplying a developing solution to the substrate stopped at the first stop position from a first nozzle that moves at a predetermined speed along the transport path. 18. The development processing method according to 17. 19. The development processing method according to claim 17, wherein the developing stop step includes a substrate tilting step of tilting the substrate at the second stop position and causing the developer to flow down from the substrate by gravity. 18. The development stopping step includes a step of supplying a rinsing liquid to the substrate stopped at the second stop position from a second nozzle that moves at a predetermined speed along the transport path. 20. The development processing method according to any one of claims 19 to 19. The substrate moving speed setting step,
Development that gives a desired set value for the development time (T _g ) from the start of supply of the developer to the substrate at the first stop position on the transport path to the stop of development at the second stop position. Time setting process,
A developer supply time (T _s ) from the start of the supply of the developer to the substrate at the first stop position on the transport path to the start of the movement of the substrate toward the second stop position. A developer supply time setting step of giving a desired set value for
Based on the development time set value (T _g ), the developer supply time set value (T _a ), and the movement distance (L) from the first stop position to the second stop position, the first A speed provisional set value calculation step for obtaining a provisional speed set value (V _D );
A speed setting value determining step of comparing a temporary setting value of the first speed with the lower limit moving speed (V _low ) and setting a normal setting value when the speed is equal to or higher than the lower limit moving speed (V _low ). 21. The development processing method according to any one of 15 to 20. Developing method according to claim 20, wherein the provisional setting value of the first velocity (V _D) is obtained by the following formula (6).
_{V D = L / (T D} -T a) ‥‥‥ (6) A first, a second, a third and a fourth section continuous in the transport direction in the transport path are provided in this order, and the transport speed of each of the sections can be set or controlled independently,
Setting the transport speed of the first section to a first speed,
Setting the transport speed of the fourth section to a second speed lower than the first speed;
From the time when the front end of the substrate in the transfer direction enters the second section to the time when the rear end of the substrate in the transfer direction enters the second section, the transfer speed of the second section is set to the first section. Control to the speed of
From the time when the leading end of the substrate enters the third section to the time when the rear end of the substrate enters the second section, control the transport speed of the third section to the first speed,
Immediately after or after the rear end of the substrate enters the third section, the respective transport speeds of the second section and the third section are simultaneously switched from the first speed to the second speed. ,
After the rear end of the substrate has left the second section, the transfer speed of the second section is switched from the second speed to the first speed,
23. The method according to any one of claims 15 to 22, wherein the transport speed of the third section is switched from the second speed to the first speed after the rear end of the substrate exits the third section. Development processing method. 24. The developing method according to claim 23, wherein a section length obtained by adding the second section and the third section in the transport direction is set to a size substantially equal to the length of the substrate. When the substrate is transported from the predetermined position in the first section on the transport path at the lower limit moving speed (V _low ), the rear end of the substrate is moved to the second section when the tact time (T _t ) elapses. 25. The development processing method according to claim 23, wherein the length of the second section is set so as to reach near a boundary between the second section and the third section. The processing of stopping the development is performed in the first section, and the processing of supplying a rinsing liquid for cleaning to the substrate is performed in the second section and / or the third section. The development processing method according to any one of claims 23 to 25, wherein a process of injecting a drying gas onto the substrate is performed within the section (2). A transport path in which a transport body for transporting the substrate to be processed mounted thereon substantially horizontally is laid in a horizontal direction,
Transport driving means for driving the transport body to move the substrate on the transport path,
A substrate loading unit that loads the substrate onto the transport path at a predetermined tact time (T _t );
A development processing unit for performing development processing on the substrate on the transport path;
A substrate unloading unit that unloads the processed substrate from the transfer path,
Stopping means for temporarily stopping the substrate for a predetermined stop time at one or a plurality of stop positions set on the transport path,
Based on the tact time (T _t ), the maximum stop time (T _s ) at which the substrate stops, the length (D) of the substrate in the transport direction, and a desired minimum substrate interval (d) in the transport direction. Lower limit moving speed calculating means for obtaining a lower limit moving speed (V _low ) of the substrate;
A moving speed control unit that controls a speed at which the substrate is moved on the transport path to a speed equal to or higher than the lower limit moving speed (V _low ). 28. The development processing apparatus according to claim 27, wherein the lower limit moving speed calculator calculates the lower limit moving speed (V _low ) by calculating the following equation (7).
V _low = (D + d) / (T _t −T _s ) ‥‥‥ (7) The development processing unit,
A developer supply unit that temporarily stops the substrate at a first stop position on the transport path and supplies a developer to the substrate;
A substrate transfer unit that moves the substrate at a first speed from the first stop position to a second stop position separated by a predetermined distance from the first stop position to a transfer downstream side on the transfer path;
29. The development processing apparatus according to claim 27, further comprising: a development stop unit configured to substantially remove the developer from the substrate at the second stop position and stop development. 30. A first nozzle for supplying a developer to the substrate stopped at the first stop position while moving the developer at a predetermined speed along the transport path. 3. The developing apparatus according to claim 1. 31. The development processing apparatus according to claim 29, wherein the development stop unit includes a substrate inclining unit that inclines the substrate at the second stop position and causes the developer to flow down from the substrate by gravity. 30. The development stop unit includes a second nozzle that supplies a rinsing liquid to the substrate stopped at the second stop position while moving at a predetermined speed along the transport path. 32. The development processing apparatus according to any one of 31. The moving speed setting means,
Development that gives a desired set value for the development time (T _g ) from the start of supply of the developer to the substrate at the first stop position on the transport path to the stop of development at the second stop position. Time setting means;
A developer supply time (T _s ) from the start of the supply of the developer to the substrate at the first stop position on the transport path to the start of the movement of the substrate toward the second stop position. A developer supply time setting means for giving a desired set value for
Based on the development time set value (T _g ), the developer supply time set value (T _a ), and the movement distance (L) from the first stop position to the second stop position, the first Speed provisional set value calculating means for obtaining a provisional set value (V _D ) of the speed;
A speed setting value determining means for comparing a temporary setting value of the first speed with the lower limit moving speed (V _low ), and setting a normal set value when the speed is equal to or higher than the lower limit moving speed (V _low ). 33. The development processing apparatus according to any one of 27 to 32. Developing apparatus according to claim 33 for determining the speed provisional setpoint calculation means temporarily set value of the by calculating the equation (8) below the first velocity (V _{D).
V D = L / (T D} -T a) ‥‥‥ (8) A transfer path having a first, second, third and fourth sections continuous along the transfer direction, in which a transfer body for transferring the transfer of the substrate to be processed substantially horizontally is laid;
Transport driving means for independently driving the transport body for each of the first, second, third, and fourth sections to transport the substrate on the transport path;
A substrate loading unit that loads the substrate onto the transport path at a predetermined tact time (T _t );
A development processing unit for performing development processing on the substrate on the transport path;
A substrate unloading unit that unloads the processed substrate from the transfer path,
First speed control means for controlling the transport speed of the first section to a first speed;
Second speed control means for controlling the transport speed of the fourth section to a second speed lower than the first speed;
From the time when the front end of the substrate in the transfer direction enters the second section to the time when the rear end of the substrate in the transfer direction enters the second section, the transfer speed of the second section is set to the first section. Third speed control means for controlling to a speed of
And controlling the transport speed of the third section to the first speed from the time when the leading end of the substrate enters the third section to the time when the rear end of the substrate enters the second section. 4 speed control means;
Immediately after or immediately after the rear end of the substrate enters the third section, the transport speeds of the second section and the third section are simultaneously switched from the first speed to the second speed. First speed switching means;
Second speed switching means for switching the transport speed of the second section from the second speed to the first speed after the rear end of the substrate exits the second section;
28. Third speed switching means for switching the transport speed in the third section from the second speed to the first speed after the rear end of the substrate passes through the third section. 35. The development processing apparatus according to any one of 34. 36. The development processing apparatus according to claim 35, wherein a section obtained by adding the second section and the third section in the transport direction has a size substantially equal to the length of the substrate. When the substrate is transported from the predetermined position in the first section on the transport path at the lower limit moving speed (V _low ), the rear end of the substrate is moved to the second section when the tact time (T _t ) elapses. 37. The developing apparatus according to claim 35, wherein the length of the second section is set so as to reach near a boundary between the second section and the third section. The development processing apparatus according to any one of claims 35 to 37, wherein the development stop unit stops the development within the first section. The development processing apparatus according to any one of claims 35 to 38, further comprising a rinsing unit that supplies a rinsing liquid to the substrate in the second section and / or the third section. The development processing apparatus according to any one of claims 35 to 39, further comprising a drying processing unit that blows a gas flow for drying onto the substrate in the fourth section.

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