JP2004260002A - Substrate temperature detection device, its manufacturing method and method for detecting temperature of substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To accurately detect the surface temperature of a substrate without requiring much time for measuring. <P>SOLUTION: A substrate temperature detection device comprises a semiconductor substrate 1; an impurity layer 2 formed on the surface of the semiconductor substrate 1 and capable of diffusing in accordance with the surface temperature of the substrate 1; and a structure 3 formed on the impurity layer 2 by a material having emissivity equal to that of the surface of the semiconductor substrate to be used for a product, e.g. a material to be used as an electrode of the semiconductor substrate, and provided with holes 4 for exposing a part of the surface of the impurity layer 2 to detect the surface temperature of the semiconductor substrate 1, on the basis of a resistance value of the semiconductor substrate 1 which is measured through the holes 4. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a substrate temperature detection device, a method for manufacturing the same, and a substrate temperature detection method, and is particularly suitable for use in measuring a surface temperature of a semiconductor substrate.
[0002]
[Prior art]
In a semiconductor device manufacturing process, temperature control of a semiconductor substrate (semiconductor wafer) in an annealing step or a film forming step is very important. In particular, when the semiconductor manufacturing apparatus is manufactured after maintenance or under different manufacturing process conditions, it is essential to actually measure the surface temperature of the semiconductor wafer so that its validity can be evaluated. Control of the surface temperature distribution of a semiconductor wafer is also important in terms of improving the yield and reliability as the area of the semiconductor wafer increases.
[0003]
As a method for detecting the temperature of the surface of a semiconductor wafer, Japanese Patent No. 2644198 discloses a method utilizing a resistance change of a semiconductor wafer doped with impurities. Other temperature detection methods include placing a semiconductor wafer on which a thermocouple is attached on the surface on a hot plate and routing the thermocouple wiring to the outside to measure the temperature, or a non-contact infrared radiation thermometer. And the method used.
[0004]
[Patent Document 1]
Japanese Patent No. 2644198 gazette
[Problems to be solved by the invention]
However, in the method of detecting the temperature of a semiconductor substrate disclosed in Japanese Patent No. 2644198, the temperature distribution on the surface of the semiconductor substrate cannot be accurately measured because the surface state of the semiconductor substrate to be manufactured is different. There's a problem. Here, FIG. 7 shows a temperature distribution diagram on the surface of a silicon wafer doped with boron (B) as an impurity for temperature detection. FIG. 8 shows a temperature distribution diagram measured by attaching a thermocouple to the surface of the silicon wafer. Here, the vertical axis of the characteristic diagrams shown in FIGS. 7 and 8 is the temperature in degrees Celsius (° C.), and the horizontal axis is the displacement distance (mm) in the X-axis direction and the Y-axis direction with the center of the silicon wafer as the origin 0. Is shown.
[0006]
Comparing the surface temperature distribution shown in FIG. 7 with the surface temperature distribution shown in FIG. 8, the characteristic diagram of the boron-doped silicon wafer shown in FIG. 7 shows that the temperature distribution has a downwardly convex temperature distribution. The surface temperature distribution is different from the upwardly convex characteristic diagram of the silicon wafer provided with the thermocouple shown in FIG. Here, since the surface temperature distribution of the silicon wafer measured using the thermocouple shown in FIG. 8 is considered to be an accurate temperature distribution since the surface temperature of the silicon wafer is actually measured directly, With a silicon wafer only doped with impurities, an accurate surface temperature distribution cannot be measured.
[0007]
On the other hand, when measuring the in-plane temperature distribution of a silicon wafer using a thermocouple, preparations such as opening the chamber to the atmosphere and routing the wiring of the thermocouple are required. There is a problem that it is necessary. In addition, when measuring the in-plane temperature distribution with an infrared radiation thermometer, it is necessary to measure the temperature distribution accurately because the error due to the surface condition of the silicon wafer and the environmental condition in which it is placed is large. Have difficulty.
[0008]
The present invention has been made in view of the above-described problems, and does not require much time for measuring the substrate temperature, and can accurately detect the surface temperature of the substrate, a method of manufacturing the same, and a method of manufacturing the same. It is an object of the present invention to realize a substrate temperature detecting method.
[0009]
[Means for Solving the Problems]
As a result of intensive studies, the present inventor has reached various aspects of the invention described below.
[0010]
The substrate temperature detecting device according to the present invention sequentially heats the first semiconductor substrate having the impurity layer at least partially exposed to the first semiconductor substrate a plurality of times while heating the first semiconductor substrate to diffuse the impurity layer. A resistance value of the semiconductor substrate and a surface temperature of the first semiconductor substrate are simultaneously measured, and a second electrode having an impurity layer at least partially exposed according to a correlation between the obtained resistance value and the surface temperature. With respect to the semiconductor substrate, the resistance value of the second semiconductor substrate is measured through the impurity layer, and the surface temperature of the second semiconductor substrate is calculated based on the correlation viewed from the resistance value. It is characterized by the following.
[0011]
Another aspect of the substrate temperature detecting device of the present invention measures a resistance value of the semiconductor substrate through the impurity layer with respect to a semiconductor substrate having an impurity layer at least partially exposed, based on the resistance value. The semiconductor device is configured to detect a surface temperature of the semiconductor substrate.
[0012]
Still another aspect of the substrate temperature detecting device of the present invention is a semiconductor substrate, an impurity layer formed on the surface of the semiconductor substrate, and a surface of the semiconductor substrate formed on the impurity layer and targeted for a product. And a structure having a hole that exposes a part of the surface of the impurity layer, the semiconductor substrate being based on a resistance value of the semiconductor substrate measured through the hole. Is characterized by detecting the surface temperature.
[0013]
Further, still another aspect of the substrate temperature detecting device of the present invention is a semiconductor substrate, an impurity layer formed on a surface of the semiconductor substrate, and formed on the semiconductor substrate on a back surface with respect to the surface, and a product target. A structure having the same emissivity as the surface of the semiconductor substrate, and detecting a surface temperature of the semiconductor substrate based on a resistance value of the semiconductor substrate on the surface on which the impurity layer is formed. It is assumed that.
[0014]
The substrate temperature detecting method of the present invention measures a resistance value of the semiconductor substrate through the impurity layer for a semiconductor substrate having an impurity layer at least partially exposed, and detects the semiconductor substrate based on the resistance value. It is characterized by detecting a surface temperature.
[0015]
Another aspect of the substrate temperature detection method of the present invention is an impurity layer formed on the surface of a semiconductor substrate, and formed on the impurity layer and having an emissivity equivalent to the surface of the semiconductor substrate to be manufactured. A substrate temperature detecting device including a structure having a hole exposing a part of the surface of the impurity layer, wherein a resistance value of the semiconductor substrate is measured through the hole, and the measurement is performed. The method is characterized in that a surface temperature of the semiconductor substrate is detected based on a result.
[0016]
According to still another aspect of the substrate temperature detecting method of the present invention, there is provided an impurity layer formed on a surface of a semiconductor substrate, and an impurity layer formed on the semiconductor substrate on a back surface with respect to a surface on which the impurity layer is formed, and A substrate having a structure having the same emissivity as the surface of the semiconductor substrate to be a substrate temperature detecting device, wherein the resistance value of the semiconductor substrate on the surface on which the impurity layer is formed is measured. Detecting the surface temperature of the semiconductor substrate based on the measurement result.
[0017]
The method of manufacturing a substrate temperature detecting device according to the present invention includes a step of forming an impurity layer on a surface of a semiconductor substrate, and forming a structure having an emissivity equivalent to that of the surface of the semiconductor substrate to be manufactured on the impurity layer. Forming a hole for exposing a part of the surface of the impurity layer to the structure to measure a resistance value of the semiconductor substrate.
[0018]
Another aspect of the method of manufacturing a substrate temperature detecting device according to the present invention includes a step of forming an impurity layer for measuring a resistance value of the semiconductor substrate on a surface of the semiconductor substrate, and a back surface on the surface on which the impurity layer is formed. Forming a structure having the same emissivity as the surface of the semiconductor substrate to be a product on the semiconductor substrate.
[0019]
BEST MODE FOR CARRYING OUT THE INVENTION
-Outline of the present invention-
The present inventor can measure the surface temperature distribution of the semiconductor substrate accurately in the conventional semiconductor substrate temperature measurement technique, but in that case, it may take a lot of time for the measurement. On the other hand, it is possible to perform measurement easily, but in that case, it is not possible to measure the surface temperature distribution of the semiconductor substrate with high accuracy. The following gist of the invention has been conceived in order to enable high-accuracy operation.
[0020]
First, in order to easily measure the surface temperature of the semiconductor substrate, a method is used in which the surface of the semiconductor substrate is doped with an impurity, and the diffusion state of the impurity diffused according to the surface temperature is measured by a resistance change of the semiconductor substrate. . However, as can be seen from a comparison between FIG. 7 and FIG. 8, simply doping the surface of the semiconductor substrate with an impurity cannot accurately measure the surface temperature distribution of the semiconductor substrate to be manufactured. The present inventor considered that this difference in surface temperature distribution was due to the difference in emissivity and thermal conductivity of the semiconductor substrate surface.
[0021]
Then, in order to measure the surface temperature of the semiconductor substrate with high accuracy, a structure having the same emissivity and thermal conductivity as the surface of the semiconductor substrate to be manufactured is formed on the semiconductor substrate. did. As an example, a material used as an electrode of a semiconductor substrate to be manufactured is formed as a structure so that a surface state very close to the semiconductor substrate to be manufactured is created.
[0022]
However, if a structure is formed on a semiconductor substrate doped with an impurity for temperature detection as it is, the resistance of the semiconductor substrate cannot be measured because the surface is covered with the structure. Therefore, the following two specific forms have been devised.
[0023]
In the first mode, an impurity layer for temperature detection is formed on a surface of a semiconductor substrate, the above-described structure is formed on the surface, and a hole reaching the semiconductor substrate is provided in the structure. Then, the temperature of the surface of the semiconductor substrate is detected by measuring the resistance value of the semiconductor substrate through the hole.
[0024]
In the second mode, an impurity layer for temperature detection is formed on the surface of a semiconductor substrate, and the above-described structure is formed on the semiconductor substrate on the back surface of the impurity layer. Then, the temperature of the surface of the semiconductor substrate is detected by measuring the resistance value of the surface of the semiconductor substrate on which the impurity layer is formed.
[0025]
Next, various embodiments based on the gist of the substrate temperature detecting device of the present invention will be described.
[0026]
(1st Embodiment)
FIG. 1 is a schematic diagram of a substrate temperature detecting apparatus 100 according to a first embodiment of the present invention. FIG. 1A shows a top view thereof, and FIG. The sectional view between I is shown.
[0027]
The substrate temperature detecting apparatus 100 according to the present embodiment includes a semiconductor substrate 1, an impurity layer 2 formed on the surface of the semiconductor substrate 1 for temperature detection, and a semiconductor substrate formed on the impurity layer 2 and serving as a product. The structure 3 includes a material having the same emissivity and thermal conductivity as the surface, for example, a structure 3 formed of a material used as an electrode of the semiconductor substrate. In the structure 3, a hole 4 reaching the impurity layer 2 is formed.
[0028]
Next, a manufacturing method in the substrate temperature detecting device 100 of the present embodiment will be described.
FIG. 2 is a schematic cross-sectional view showing a method of manufacturing the substrate temperature detecting device 100 shown in FIG.
[0029]
First, as shown in FIG. 2A, boron is ion-implanted into the surface of the semiconductor substrate 1 made of silicon under the conditions of an acceleration voltage of 50 keV and a dose of 1.0 × 10 ¹⁴ atoms / cm ³ . An impurity layer 2 is formed on a surface of a semiconductor substrate 1.
[0030]
Subsequently, as shown in FIG. 2B, a film 11 made of, for example, titanium nitride (TiN) is deposited on the impurity layer 2 by a sputtering method. Thereafter, a photoresist is applied on the film 11 by photolithography, and the photoresist is irradiated with a predetermined pattern of ultraviolet rays. Thereafter, by using a solvent, the photoresist in the region not irradiated with the ultraviolet rays is removed, and a resist pattern 21 having a predetermined shape covering the resistance value measurement region of the semiconductor substrate 1 is formed.
[0031]
Subsequently, as shown in FIG. 2C, a mask 5 made of the film 11 is formed by, for example, a diameter of about 20 mm by dry etching, and then the resist pattern 21 is removed by an ashing process using O ₂ plasma or the like. . Further, an iridium (Ir) film 12 is deposited on the entire surface by a sputtering method.
[0032]
Subsequently, the mask 5 is removed by wet etching to form a structure 3 made of the iridium film 12 and having the hole 4 opening the resistance value measurement region of the semiconductor substrate 1. After that, the same processing as the manufacturing process of the semiconductor substrate to be a product is performed to complete the substrate temperature detecting device 100 of the present embodiment.
[0033]
In the above-described method of manufacturing the substrate temperature detecting device 100, the holes 4 that are the resistance value measurement regions are formed using the mask 5, but the holes 4 may be formed by using a so-called lift-off method. Here, the lift-off method means that a resist is formed in an inverse pattern on the semiconductor substrate 1 in order to form a target pattern, and then a thin film for forming the structure 3 is deposited. This is a method of forming an intended pattern by removing unnecessary portions together with a resist.
[0034]
Here, a method of manufacturing the substrate temperature detecting device 100 according to the present embodiment using the above-described lift-off method will be described below.
FIG. 3 is a schematic cross-sectional view showing a manufacturing method using a lift-off method for the substrate temperature detecting device 100 shown in FIG.
[0035]
First, as shown in FIG. 3A, boron is ion-implanted into the surface of the semiconductor substrate 1 made of silicon under the conditions of an acceleration voltage of 50 keV and a dose of 1.0 × 10 ¹⁴ atoms / cm ³ . An impurity layer 2 is formed on a surface of a semiconductor substrate 1.
[0036]
Subsequently, as shown in FIG. 3B, a photoresist is applied on the impurity layer 2 by photolithography, and the photoresist is irradiated with ultraviolet rays of a predetermined pattern. After that, by using a solvent, the photoresist in the region not irradiated with the ultraviolet rays is removed to form a resist pattern 22 having a predetermined shape covering the resistance measurement region of the semiconductor substrate 1. Further, an iridium (Ir) film 12 is deposited on the entire surface by a sputtering method.
[0037]
Subsequently, the resist pattern 22 is removed by a treatment using a solvent to form a structure 3 made of the iridium film 12 and having the hole 4 opening the resistance measurement region of the semiconductor substrate 1. After that, the same processing as the manufacturing process of the semiconductor substrate to be a product is performed to complete the substrate temperature detecting device 100 of the present embodiment.
[0038]
Next, a method of detecting a substrate temperature in the substrate temperature detection device 100 of the present embodiment will be described.
In order to detect the surface temperature of the semiconductor substrate, first, it is necessary to previously determine the correlation between the surface temperature of the semiconductor substrate and the resistance value.
Specifically, the resistance value and the surface temperature of the semiconductor substrate are measured simultaneously several times sequentially while heating the semiconductor substrate having the impurity layer at least partially exposed, while promoting the diffusion of the impurity layer. Then, a correlation between the resistance value and the surface temperature is obtained. FIG. 6 shows an equation of the correlation between the surface temperature of the semiconductor substrate 1 and the resistance value. The reason why the surface temperature of the semiconductor substrate and its resistance value have characteristics as shown in FIG. 6 is that the impurity layer 2 formed on the surface of the semiconductor substrate 1 is increased as the surface temperature of the semiconductor substrate 1 increases. This is because the resistance value of the semiconductor substrate 1 changes according to the state of diffusion.
[0039]
Subsequently, the resistance value of the semiconductor substrate 1 is measured through the hole 4 using a four-probe method. Then, the surface temperature of the semiconductor substrate 1 is detected from the measured resistance value with reference to the relational expression obtained in FIG.
The surface temperature distribution of the semiconductor substrate 1 detected using this substrate temperature detection method has the same tendency as the surface temperature distribution shown in FIG. 8, and thus the validity of the substrate temperature detection device 100 in this embodiment is confirmed. We were able to.
[0040]
(Second embodiment)
FIG. 4 is a schematic diagram of a substrate temperature detecting device 200 according to the second embodiment of the present invention. FIG. 4A shows a top view thereof, and FIG. The sectional view between II is shown.
[0041]
The substrate temperature detecting device 200 according to the present embodiment is formed on the semiconductor substrate 1, the impurity layer 2 formed on the surface of the semiconductor substrate 1 for temperature detection, and the semiconductor substrate 1 on the back surface with respect to the front surface, The structure includes a material 13 having the same emissivity and thermal conductivity as the surface of the semiconductor substrate to be manufactured, for example, a structure 13 formed of a material used as an electrode of the semiconductor substrate.
[0042]
Next, a manufacturing method in the substrate temperature detecting device 200 of the present embodiment will be described.
FIG. 5 is a schematic cross-sectional view showing a method of manufacturing the substrate temperature detecting device 200 shown in FIG.
[0043]
First, as shown in FIG. 5A, the surface of a semiconductor substrate 1 made of silicon, both surfaces of which are polished, is accelerated at a voltage of 50 keV and a dose of 1.0 × 10 ¹⁴ atoms / cm ³ . Boron ions are implanted to form an impurity layer 2 on the surface of the semiconductor substrate 1.
[0044]
Subsequently, as shown in FIG. 5B, a structure 13 made of an iridium film is formed on the entire back surface of the semiconductor substrate 1 by a sputtering method. After that, the same process as the manufacturing process of the semiconductor substrate to be a product is performed on the back surface of the semiconductor substrate 1 to complete the substrate temperature detecting device 200 of the present embodiment.
[0045]
Next, a method of detecting a substrate temperature in the substrate temperature detection device 200 of the present embodiment will be described.
In order to detect the surface temperature of the semiconductor substrate, a correlation between the surface temperature and the resistance value of the semiconductor substrate 1 shown in FIG. 6 is determined in advance, as in the case of the first embodiment.
[0046]
Subsequently, the resistance value of the back surface of the semiconductor substrate 1 on which the impurity layer 2 is formed is measured by using a four-probe method. Then, the surface temperature of the semiconductor substrate 1 is detected from the measured resistance value with reference to the correlation equation obtained in FIG.
The surface temperature distribution of the semiconductor substrate 1 detected using this substrate temperature detection method has the same tendency as the surface temperature distribution shown in FIG. 8, and thus the validity of the substrate temperature detection device 100 in this embodiment is confirmed. We were able to.
[0047]
In the method of manufacturing the substrate temperature detecting device according to the first and second embodiments, an example is shown in which an iridium film is applied as a structure formed on the semiconductor substrate 1, but the present invention is not limited to this. without, for example, a further metal film such as platinum, iridium _oxide, may be applied _{SrRuO 3, La 2-x Sr} X CuO (LSCO) conductive oxide such. In the first embodiment, the holes 4 are formed in the structure 3 by arranging five masks 5 or five resist patterns 22 each having a diameter of 20 mm as shown in FIG. 1A. One or more resist patterns 22 may be formed, and the shape thereof may be polygonal or have an arbitrary curve. Note that the present invention is preferably used for measuring a surface temperature of a semiconductor substrate when a Pb (Zr, Ti) O ₃ film which is a ferroelectric film is formed by an MOCVD apparatus.
[0048]
Hereinafter, various aspects of the present invention will be collectively described as supplementary notes.
[0049]
(Supplementary Note 1) The resistance value of the first semiconductor substrate is sequentially increased a plurality of times with respect to the first semiconductor substrate having the impurity layer at least partially exposed, while promoting the diffusion of the impurity layer by heating. And the surface temperature of the first semiconductor substrate are measured at the same time, and according to the correlation between the obtained resistance value and the surface temperature, the second semiconductor substrate having the impurity layer at least partially exposed, The resistance value of the second semiconductor substrate is measured through the impurity layer, and the surface temperature of the second semiconductor substrate is calculated based on the correlation viewed from the resistance value. Substrate temperature detector.
[0050]
(Supplementary Note 2) With respect to a semiconductor substrate having an impurity layer at least partially exposed, a resistance value of the semiconductor substrate is measured through the impurity layer, and a surface temperature of the semiconductor substrate is detected based on the resistance value. A substrate temperature detecting device characterized by having such a configuration.
[0051]
(Supplementary Note 3) A semiconductor substrate,
An impurity layer formed on the surface of the semiconductor substrate;
A structure provided on the impurity layer, having an emissivity equivalent to the surface of the semiconductor substrate to be manufactured, and having a hole exposing a part of the surface of the impurity layer,
A substrate temperature detecting device, wherein a surface temperature of the semiconductor substrate is detected based on a resistance value of the semiconductor substrate measured through the hole.
[0052]
(Supplementary Note 4) A semiconductor substrate,
An impurity layer formed on the surface of the semiconductor substrate;
A structure having the same emissivity as the surface of the semiconductor substrate to be manufactured, which is formed on the semiconductor substrate on the back surface with respect to the front surface,
A substrate temperature detecting device, wherein a surface temperature of the semiconductor substrate is detected based on a resistance value of the semiconductor substrate on the surface on which the impurity layer is formed.
[0053]
(Supplementary Note 5) The substrate temperature detecting device according to Supplementary Note 3 or 4, wherein the structure further has a thermal conductivity equivalent to a surface of a semiconductor substrate to be a target of the product.
[0054]
(Supplementary Note 6) The substrate temperature detecting device according to any one of Supplementary Notes 3 to 5, wherein the structure is formed of an electrode material of a semiconductor substrate that is a target of the product.
[0055]
(Supplementary Note 7) The substrate temperature detecting device according to any one of Supplementary Notes 3 to 6, wherein the structure is formed of a metal or a conductive oxide.
[0056]
(Supplementary Note 8) The substrate temperature detecting device according to supplementary note 7, wherein the metal is platinum or iridium.
[0057]
(Supplementary Note 9) The substrate temperature detecting device according to supplementary note 7, wherein the conductive oxide is any of iridium oxide, SrRuO ₃ , and LSCO.
[0058]
(Supplementary Note 10) The substrate temperature detecting device according to any one of Supplementary Notes 1 to 9, wherein the impurity layer is a layer doped with boron or phosphorus.
[0059]
(Supplementary Note 11) With respect to a semiconductor substrate having an impurity layer at least partially exposed, a resistance value of the semiconductor substrate is measured through the impurity layer, and a surface temperature of the semiconductor substrate is detected based on the resistance value. A method for detecting a substrate temperature, comprising:
[0060]
(Supplementary Note 12) An impurity layer formed on a surface of the semiconductor substrate,
A structure formed on the impurity layer, having an emissivity equivalent to the surface of the semiconductor substrate to be manufactured, and having a hole exposing a part of the surface of the impurity layer. A method for detecting a substrate temperature, comprising:
A substrate temperature detecting method, comprising: measuring a resistance value of the semiconductor substrate through the hole; and detecting a surface temperature of the semiconductor substrate based on the measurement result.
[0061]
(Supplementary Note 13) An impurity layer formed on a surface of the semiconductor substrate,
A structure formed on the semiconductor substrate on the back surface with respect to the surface on which the impurity layer is formed, and having a structure having the same emissivity as the surface of the semiconductor substrate to be manufactured; So,
A substrate temperature detection method, comprising: measuring a resistance value of the semiconductor substrate on the surface on which the impurity layer is formed, and detecting a surface temperature of the semiconductor substrate based on the measurement result.
[0062]
(Supplementary note 14) The substrate temperature detecting method according to Supplementary note 12 or 13, wherein the structure further has a thermal conductivity equivalent to a surface of a semiconductor substrate to be a target of the product.
[0063]
(Supplementary note 15) The substrate temperature detecting method according to any one of Supplementary notes 12 to 14, wherein the structure is formed of an electrode material of a semiconductor substrate that is a target of the product.
[0064]
(Supplementary Note 16) The substrate temperature detecting method according to any one of Supplementary Notes 12 to 15, wherein the structure is formed of a metal or a conductive oxide.
[0065]
(Supplementary note 17) The substrate temperature detecting method according to supplementary note 16, wherein the metal is platinum or iridium.
[0066]
(Supplementary Note 18) The substrate temperature detecting method according to Supplementary Note 16, wherein the conductive oxide is any one of iridium oxide, SrRuO ₃ , and LSCO.
[0067]
(Supplementary note 19) The substrate temperature detecting method according to any one of Supplementary notes 12 to 18, wherein the impurity layer is a layer doped with boron or phosphorus.
[0068]
(Supplementary Note 20) a step of forming an impurity layer on a surface of the semiconductor substrate;
Forming a structure having an emissivity equivalent to the surface of the semiconductor substrate to be manufactured on the impurity layer;
Forming a hole for measuring a resistance value of the semiconductor substrate by exposing a part of the surface of the impurity layer to the structure, and forming a hole for measuring a resistance value of the semiconductor substrate.
[0069]
(Supplementary Note 21) a step of forming an impurity layer for measuring a resistance value of the semiconductor substrate on a surface of the semiconductor substrate;
Forming a structure having an emissivity equivalent to that of the front surface of the semiconductor substrate to be manufactured on the back surface of the semiconductor substrate relative to the front surface on which the impurity layer is formed. Manufacturing method.
[0070]
(Supplementary note 22) The method of manufacturing a substrate temperature detecting device according to Supplementary note 20 or 21, wherein the structure further has a thermal conductivity equivalent to a surface of a semiconductor substrate to be a target of the product.
[0071]
(Supplementary note 23) The method of manufacturing a substrate temperature detecting device according to any one of Supplementary notes 20 to 22, wherein the structure is formed of an electrode material of a semiconductor substrate that is a target of the product.
[0072]
(Supplementary note 24) The method of manufacturing a substrate temperature detecting device according to any one of Supplementary notes 20 to 23, wherein the structure is formed of a metal or a conductive oxide.
[0073]
(Supplementary Note 25) The method for manufacturing a substrate temperature detecting device according to Supplementary Note 24, wherein the metal is platinum or iridium.
[0074]
(Supplementary Note 26) The method of manufacturing a substrate temperature detecting device according to Supplementary Note 24, wherein the conductive oxide is any one of iridium oxide, SrRuO ₃ , and LSCO.
[0075]
(Supplementary note 27) The method of manufacturing a substrate temperature detecting device according to any one of supplementary notes 20 to 26, wherein the impurity layer is formed by ion implantation of boron or phosphorus.
[0076]
(Supplementary Note 28) The method of manufacturing a substrate temperature detecting device according to any one of Supplementary Notes 20 to 27, wherein the structure is formed by a sputtering method.
[0077]
【The invention's effect】
ADVANTAGE OF THE INVENTION According to this invention, the surface temperature distribution of a semiconductor substrate can be detected accurately, without requiring much time for the temperature measurement of a semiconductor substrate. Thus, in each manufacturing process, the surface temperature distribution of the semiconductor substrate can be appropriately controlled, and the yield and reliability of the semiconductor device can be improved.
[Brief description of the drawings]
FIG. 1 is a schematic diagram of a substrate temperature detecting device according to a first embodiment of the present invention.
2 is a schematic cross-sectional view showing a method of manufacturing the substrate temperature detecting device shown in FIG. 1 in the order of steps.
FIG. 3 is a schematic cross-sectional view showing another method of manufacturing the substrate temperature detecting device shown in FIG.
FIG. 4 is a schematic diagram of a substrate temperature detecting device according to a second embodiment of the present invention.
5 is a schematic cross-sectional view showing a method of manufacturing the substrate temperature detecting device shown in FIG. 4 in the order of steps.
FIG. 6 is a diagram showing a correlation between a surface temperature of a semiconductor substrate and a resistance value.
FIG. 7 is a temperature distribution diagram of a silicon wafer surface measured by doping with boron.
FIG. 8 is a temperature distribution diagram of a silicon wafer surface measured by attaching a thermocouple.
[Explanation of symbols]
Reference Signs List 1 semiconductor substrate 2 impurity layer 3, 13 structure 4 hole 5 mask 11 titanium nitride (TiN) film 12 iridium (Ir) film 21, 22 resist pattern 100, 200 substrate temperature detecting device

Claims (9)

The resistance value of the first semiconductor substrate and the first semiconductor substrate having the impurity layer at least partially exposed to the first semiconductor substrate are heated multiple times, while the diffusion of the impurity layer is promoted. The surface temperature of the semiconductor substrate is measured at the same time, and according to the correlation between the obtained resistance value and the surface temperature, the second semiconductor substrate having the impurity layer at least partially exposed is passed through the impurity layer. A substrate temperature detecting device configured to measure a resistance value of the second semiconductor substrate and calculate a surface temperature of the second semiconductor substrate based on the correlation viewed from the resistance value. . For a semiconductor substrate having an impurity layer at least partially exposed, a resistance value of the semiconductor substrate is measured through the impurity layer, and a surface temperature of the semiconductor substrate is detected based on the resistance value. A substrate temperature detecting device, comprising: A semiconductor substrate;
An impurity layer formed on the surface of the semiconductor substrate;
A structure provided on the impurity layer, having an emissivity equivalent to the surface of the semiconductor substrate to be manufactured, and having a hole exposing a part of the surface of the impurity layer,
A substrate temperature detecting device, wherein a surface temperature of the semiconductor substrate is detected based on a resistance value of the semiconductor substrate measured through the hole. A semiconductor substrate;
An impurity layer formed on the surface of the semiconductor substrate;
A structure having the same emissivity as the surface of the semiconductor substrate to be manufactured, which is formed on the semiconductor substrate on the back surface with respect to the front surface,
A substrate temperature detecting device, wherein a surface temperature of the semiconductor substrate is detected based on a resistance value of the semiconductor substrate on the surface on which the impurity layer is formed. For a semiconductor substrate having an impurity layer at least partially exposed, measuring a resistance value of the semiconductor substrate through the impurity layer, and detecting a surface temperature of the semiconductor substrate based on the resistance value. Substrate temperature detection method. An impurity layer formed on the surface of the semiconductor substrate;
A structure formed on the impurity layer, having an emissivity equivalent to the surface of the semiconductor substrate to be manufactured, and having a hole exposing a part of the surface of the impurity layer. A method for detecting a substrate temperature, comprising:
A substrate temperature detecting method, comprising: measuring a resistance value of the semiconductor substrate through the hole; and detecting a surface temperature of the semiconductor substrate based on the measurement result. An impurity layer formed on the surface of the semiconductor substrate;
A structure formed on the semiconductor substrate on the back surface with respect to the surface on which the impurity layer is formed, and having a structure having the same emissivity as the surface of the semiconductor substrate to be manufactured; So,
A substrate temperature detection method, comprising: measuring a resistance value of the semiconductor substrate on the surface on which the impurity layer is formed, and detecting a surface temperature of the semiconductor substrate based on the measurement result. Forming an impurity layer on the surface of the semiconductor substrate;
Forming a structure having an emissivity equivalent to the surface of the semiconductor substrate to be manufactured on the impurity layer;
Forming a hole for measuring a resistance value of the semiconductor substrate by exposing a part of the surface of the impurity layer to the structure, and forming a hole for measuring a resistance value of the semiconductor substrate. Forming an impurity layer on the surface of the semiconductor substrate for measuring the resistance value of the semiconductor substrate,
Forming a structure having an emissivity equivalent to that of the front surface of the semiconductor substrate to be manufactured on the back surface of the semiconductor substrate relative to the front surface on which the impurity layer is formed. Manufacturing method.

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