JP2004241428A - Substrate treatment device and method therefor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate treatment device and a method therefor which are capable of detecting whether a substrate gets out of a position or not in both a substrate treatment process and a substrate transfer process, and preventing undesired treatment from being continuously carried out so as to improve a manufacturing yield. <P>SOLUTION: A semiconductor wafer is transferred by a transfer mechanism 102 from a cassette in a cassette chamber 105 to an aligning mechanism 103 (arrow A). After the semiconductor wafer is aligned by the aligning mechanism 103, the semiconductor wafer is loaded into a treatment chamber 104 (arrow B). After treatment is finished, the semiconductor wafer is reloaded into the aligning mechanism 103 from the treatment chamber 104 (arrow C). When the misalignment volume of the semiconductor wafer is equal to or smaller than a reference value, the semiconductor wafer is loaded into the cassette chamber 105 (arrow D). When the misalignment volume is larger than the reference value, the semiconductor wafer is subjected to interlocking. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a substrate processing apparatus and a substrate processing method for performing a predetermined process on a substrate such as a semiconductor wafer.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, for example, in a process of manufacturing a semiconductor device, a substrate processing apparatus that performs a predetermined process such as a film forming process or an etching process on a substrate, for example, a semiconductor wafer formed in a substantially circular shape, is frequently used.
[0003]
FIG. 6 shows an example of the configuration of such a substrate processing apparatus. In FIG. 6, reference numeral 601 denotes a substrate transfer chamber. A transfer mechanism 602 and a positioning mechanism 603 are provided in the substrate transfer chamber 601.
[0004]
A plurality (four in FIG. 6) of processing chambers (processing mechanisms) 604 and a plurality of (two in FIG. 6) cassette chambers 605 are provided around the substrate transfer chamber 601. The inside of the transfer chamber 601, the processing chamber 604, and the cassette chamber 605 can be set to a vacuum atmosphere.
[0005]
Then, as shown by an arrow in the drawing, the semiconductor wafer is taken out from a cassette (not shown) provided in the cassette chamber 605 by the transfer mechanism 602 and is first transferred to the alignment mechanism 603 (arrow A), and the semiconductor wafer is positioned. After the alignment, the semiconductor wafer is transferred to the processing chamber 604 and subjected to a predetermined process (arrow B), and thereafter, a series of operations of returning the processed semiconductor wafer to the cassette in the cassette chamber 605 (arrow C) are repeatedly executed. In addition, the apparatus is configured to continuously process a plurality of semiconductor wafers stored in a cassette in the cassette chamber 605.
[0006]
Depending on the processing step, after processing a semiconductor wafer in one processing chamber 604, the processed semiconductor wafer is transferred to another processing chamber 604 and subjected to different processing continuously. In some cases, the same processing is performed in parallel in a plurality of processing chambers 604, and processing is performed to improve throughput.
[0007]
The alignment mechanism 603 detects the position of the peripheral edge of the semiconductor wafer while rotating the semiconductor wafer, detects the position of the orientation flat and the notch (position in the rotation direction), and also detects the deviation of the center of the semiconductor wafer from the rotation center. Eccentricity). Then, the semiconductor wafer is received from the alignment mechanism 603 so as to correct the shift (eccentricity) of the center of the semiconductor wafer from the rotation center by the transport mechanism 602 while adjusting the position of the semiconductor wafer in the rotation direction in a fixed direction by the alignment mechanism 603. The semiconductor wafer is transported to the processing chamber 604 in this aligned state.
[0008]
In the substrate processing apparatus as described above, the semiconductor wafer may be displaced during a series of processing of the semiconductor wafer in the processing chamber 604. For example, it is known that when a semiconductor wafer is attracted to a wafer mounting table provided in the processing chamber 604 by an electrostatic chuck, there is a possibility that a positional shift may occur when the semiconductor wafer is separated from the electrostatic chuck. There is also known a method of preventing such a displacement by guiding the semiconductor wafer with a physical structure such as an annular cover (for example, see Patent Document 1).
[0009]
[Patent Document 1]
JP 2001-44265 A (page 3-4, FIG. 1-3)
[0010]
[Problems to be solved by the invention]
However, in the above-described method in which a physical structure is provided in the processing chamber, such a structure may affect plasma or the like, and may have an undesirable effect on a processing state.
[0011]
In addition, the displacement of the semiconductor wafer may occur not only when the semiconductor wafer is separated from the electrostatic chuck but also in another process. For example, a process of lifting and lowering a semiconductor wafer with a pin on a mounting table for delivery of a semiconductor wafer, a process of transferring a semiconductor wafer between the pin and the transfer mechanism 602, or a transfer by the transfer mechanism 602 It can also occur in secondary. Further, if the pressure of the cooling gas such as helium supplied to the back side of the semiconductor wafer for cooling is too high, the semiconductor wafer may be displaced during processing due to the gas pressure.
[0012]
If the processing of the semiconductor wafer is performed in a state where the above-described positional shift has occurred, it is highly possible that the semiconductor wafer will be in an undesired processing state. However, for example, a positional shift that makes the transfer impossible by the transfer mechanism 602 occurs. Unless the operator cannot know that such a displacement has occurred, there is a possibility that undesired processing may be performed on a large number of semiconductor wafers.
[0013]
The present invention has been made in view of such a conventional situation, and can detect a position shift in a substrate processing process and a position shift in a substrate transfer process, so that undesired processing is continuously performed. It is an object of the present invention to provide a substrate processing apparatus and a substrate processing method capable of preventing the occurrence of a problem and improving the yield.
[0014]
[Means for Solving the Problems]
According to the first aspect of the present invention, a detection mechanism for detecting a shift amount of a substrate from a predetermined position and positioning the substrate, a processing mechanism for performing a predetermined process on the substrate, and transporting the substrate A transport mechanism for transporting the substrate to the detection mechanism by the transport mechanism, and transporting the substrate to the processing mechanism in a positioned state for processing. The processed substrate is transported to the detection mechanism, and a deviation amount of the processed substrate from a predetermined position can be detected.
[0015]
The invention according to claim 2 is the substrate processing apparatus according to claim 1, wherein the detected shift amount of the processed substrate from a predetermined position is compared with a preset reference value, and the shift amount is determined. Is greater than the reference value, an interlock process is performed.
[0016]
According to a third aspect of the present invention, in the substrate processing apparatus according to the first or second aspect, when continuously processing a plurality of the substrates, an amount of deviation of the processed substrate from the predetermined position by the detection mechanism. Can be set to be detected at a desired timing.
[0017]
According to a fourth aspect of the present invention, there is provided a detecting mechanism for detecting an amount of deviation of a substrate from a predetermined position and positioning the substrate, a processing mechanism for performing a predetermined process on the substrate, and transporting the substrate. A transport mechanism that transports the substrate to the detection mechanism by the transport mechanism, and transports the substrate to the processing mechanism in a positioned state to perform processing. The substrate transported and positioned by the mechanism is transported again to the detection mechanism, and the amount of deviation of the substrate from a predetermined position can be detected.
[0018]
According to a fifth aspect of the present invention, there is provided a detecting mechanism for detecting an amount of deviation of a substrate from a predetermined position and positioning the substrate, a processing mechanism for performing a predetermined process on the substrate, and transporting the substrate. And a transport mechanism that transports the substrate to the detection mechanism by the transport mechanism, and transports the substrate to the processing mechanism in a positioned state to perform processing. Transporting the processed substrate processed by the processing mechanism to the detection mechanism, and detecting a deviation amount of the processed substrate from a predetermined position.
[0019]
According to a sixth aspect of the present invention, in the substrate processing method according to the fifth aspect, the detected shift amount of the processed substrate from a predetermined position is compared with a preset reference value to determine the shift amount. When the value exceeds the reference value, the process is stopped.
[0020]
According to a seventh aspect of the present invention, in the substrate processing method according to the fifth or sixth aspect, when continuously processing a plurality of the substrates, an amount of deviation of the processed substrate from the predetermined position by the detection mechanism Is detected at a predetermined timing.
[0021]
The invention according to claim 8 is a detection mechanism for detecting the amount of displacement of the substrate from a predetermined position and positioning the substrate, a processing mechanism for performing a predetermined process on the substrate, and transporting the substrate. And a transport mechanism that transports the substrate to the detection mechanism by the transport mechanism, and transports the substrate to the processing mechanism in a positioned state to perform processing. After the substrate once conveyed and positioned by the detection mechanism is conveyed to the processing mechanism by the conveyance mechanism, the substrate is again conveyed to the detection mechanism by the conveyance mechanism, and a shift amount of the substrate from a predetermined position is detected. It is characterized by doing.
[0022]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
[0023]
FIG. 1 schematically shows a schematic configuration of a substrate processing apparatus according to an embodiment of the present invention. In FIG. 1, reference numeral 101 denotes a substrate transfer chamber. In the substrate transfer chamber 101, a transfer mechanism 102 and a positioning mechanism 103 are provided.
[0024]
Around the substrate transfer chamber 1, a plurality (four in FIG. 1) of processing chambers (processing mechanisms) 104 and a plurality of (two in FIG. 1) cassette chambers 105 are provided. The inside of the transfer chamber 101, the processing chamber 104, and the cassette chamber 105 can be set to a vacuum atmosphere.
[0025]
FIG. 2 schematically shows a schematic configuration of an etching apparatus as an example of the processing chamber (processing mechanism) 104. In FIG. 1, reference numeral 1 denotes a cylindrical vacuum chamber which is made of, for example, aluminum or the like and has a structure capable of hermetically closing the inside thereof and constituting a plasma processing chamber.
[0026]
The vacuum chamber 1 has a stepped cylindrical shape including a small-diameter upper portion 1a and a large-diameter lower portion 1b, and is connected to a ground potential. In addition, a support table (susceptor) 2 that supports a semiconductor wafer W as a substrate to be processed substantially horizontally with a surface to be processed facing upward is provided inside the vacuum chamber 1.
[0027]
The support table 2 is made of, for example, a material such as aluminum and is supported on a conductor support 4 via an insulating plate 3 made of ceramic or the like. A focus ring 5 made of a conductive material or an insulating material is provided on an outer periphery above the support table 2.
[0028]
Further, an electrostatic chuck 6 for electrostatically adsorbing the semiconductor wafer W is provided on a surface of the support table 2 on which the semiconductor wafer W is placed. The electrostatic chuck 6 includes an electrode 6a disposed between insulators 6b, and a DC power supply 13 is connected to the electrode 6a. When a voltage is applied to the electrode 6a from the power supply 13, the semiconductor wafer W is attracted by, for example, Coulomb force.
[0029]
Further, the support table 2 supplies a coolant flow path (not shown) for circulating the coolant and a He gas to the back surface of the semiconductor wafer W in order to efficiently transmit cold heat from the coolant to the semiconductor wafer W. A gas introduction mechanism (not shown) is provided to control the temperature of the semiconductor wafer W to a desired temperature.
[0030]
The support table 2 and the support table 4 can be moved up and down by a ball screw mechanism including a ball screw 7, and a drive portion below the support table 4 is covered with a bellows 8 made of stainless steel (SUS). A bellows cover 9 is provided on the outside of 8.
[0031]
A power supply line 12 for supplying high-frequency power is connected to a substantially center of the support table 2. The matching box 11 and the high frequency power supply 10 are connected to the power supply line 12. The high frequency power supply 10 supplies a predetermined frequency, for example, high frequency power in the range of 13.56 to 150 MHz to the support table 2.
[0032]
Further, an exhaust ring 14 is provided outside the focus ring 5. The exhaust ring 14 is electrically connected to the vacuum chamber 1 via the support 4 and the bellows 8.
[0033]
On the other hand, a shower head 16 is provided on a ceiling wall portion of the vacuum chamber 1 above the support table 2 so as to face the support table 2 in parallel and the shower head 16 is grounded. Therefore, the support table 2 and the shower head 16 function as a pair of electrodes.
[0034]
The shower head 16 is provided with a large number of gas discharge holes 18 on its lower surface, and has a gas inlet 16a on its upper part. A gas diffusion space 17 is formed therein. A gas supply pipe 15a is connected to the gas introduction section 16a, and the other end of the gas supply pipe 15a is connected to a processing gas supply system 15 for supplying a processing gas for etching. Then, the processing gas reaches the gas diffusion space 17 of the shower head 16 from the processing gas supply system 15 via the gas supply pipe 15a and the gas introduction part 16a, and is discharged from the gas discharge hole 18 to be formed on the semiconductor wafer W. Is used for etching the film.
[0035]
An exhaust port 19 is formed on a side wall of the lower portion 1b of the vacuum chamber 1, and an exhaust system 20 is connected to the exhaust port 19. By operating a vacuum pump provided in the exhaust system 20, the pressure inside the vacuum chamber 1 can be reduced to a predetermined degree of vacuum. Further, a gate valve 24 for opening and closing the loading / unloading port of the semiconductor wafer W is provided on the upper side wall of the lower portion 1b of the vacuum chamber 1. This loading / unloading port is connected to the substrate transfer chamber 101 shown in FIG.
[0036]
On the other hand, an annular magnetic field forming mechanism (ring magnet) 21 is disposed concentrically with the vacuum chamber 1 around the outer side of the upper portion 1 a of the vacuum chamber 1, and performs processing between the support table 2 and the shower head 16. It forms a magnetic field in space. The entire magnetic field forming mechanism 21 is rotatable around the vacuum chamber 1 at a predetermined rotation speed by a rotation mechanism 25.
[0037]
As the magnetic field forming mechanism 21, a type that forms a dipole magnetic field or a type that forms a multipole magnetic field can be used as necessary.
[0038]
FIG. 3 schematically shows a schematic configuration of an alignment mechanism 103 provided in the substrate transfer chamber 101, a so-called orienter.
[0039]
As shown in the figure, the alignment mechanism 103 includes a substrate mounting table 30 formed in a substantially disk shape and on which the semiconductor wafer W is mounted. , The shaft 32 of the rotation drive mechanism 31 is connected.
[0040]
On the side of the substrate mounting table 30, a detection mechanism 33 for detecting the position of the peripheral portion of the semiconductor wafer W mounted on the substrate mounting table 30 is provided. The detection mechanism 33 includes, for example, a light receiving unit including a CCD sensor or the like and a light emitting unit including an LED or the like. The light receiving section and the light emitting section are arranged so as to face up and down, a part of the light from the light emitting section is blocked by the peripheral portion of the semiconductor wafer W, and the remaining light is incident on the light receiving section. It is configured as follows.
[0041]
A detection signal from the detection mechanism 33 is input to a control unit 34 including a CPU and the like. Then, the control unit 34 rotates the semiconductor wafer W substantially one round by the rotation driving mechanism 31, and at this time, a change in the amount of light incident on the light receiving unit of the detection mechanism 33 causes the specific shape formed on the peripheral edge of the semiconductor wafer W to be changed. In addition to detecting a portion (orientation flat or notch), a deviation (eccentricity) of the center of the semiconductor wafer W from the center of rotation of the substrate mounting table 30 is detected. Then, based on the above detection result, the semiconductor wafer W is rotated so that the notch portion or the like of the semiconductor wafer W is oriented in a predetermined direction, and the semiconductor wafer W is aligned in the θ direction. When the loaded semiconductor wafer W is received by the transfer mechanism 102, the semiconductor wafer W is received so as to correct the eccentricity so that the semiconductor wafer W is aligned.
[0042]
Then, in the substrate processing apparatus of the present embodiment having the above configuration, as shown by the arrows in the flowchart of FIG. 4 and FIG. 1, first, the semiconductor wafer is transferred from the cassette (not shown) provided in the cassette chamber 105 by the transfer mechanism 102. The semiconductor wafer is unloaded (51) and loaded into the alignment mechanism 103 (52) (arrow A in FIG. 1).
[0043]
Next, after aligning the semiconductor wafer with the alignment mechanism 103, the semiconductor wafer is unloaded from the alignment mechanism 103 (53) and is loaded into one of the processing chambers 104 (54) (arrow B in FIG. 1). ).
[0044]
Then, a predetermined process, for example, an etching process is performed on the semiconductor wafer in the processing chamber 104.
[0045]
In the processing in the processing chamber 104 (the vacuum chamber 1 shown in FIG. 2), first, the gate valve 24 shown in FIG. 2 is opened, the semiconductor wafer is loaded into the vacuum chamber 1 by the transfer mechanism 102, and the predetermined It is placed on the support table 2 which has been lowered to the position. Then, a predetermined voltage is applied from the DC power supply 13 to the electrode 6a of the electrostatic chuck 6, and the semiconductor wafer is attracted by Coulomb force. Thereafter, the transfer mechanism 102 is retracted out of the vacuum chamber 1, the gate valve 24 is closed, the support table 2 is raised to the position shown in FIG. 2, and the inside of the vacuum chamber 1 is evacuated by the vacuum pump of the exhaust system 20. At the same time, a processing gas is introduced at a predetermined flow rate from the processing gas supply system 15, and the inside of the vacuum chamber 1 is maintained at a predetermined pressure, for example, 1.33 to 133 Pa (10 to 1000 mTorr). Then, in this state, high frequency power of a predetermined frequency is supplied from the high frequency power supply 10 to the support table 2. In this case, a high-frequency electric power is applied to the support table 2 as the lower electrode, so that a high-frequency electric field is formed in the processing space between the shower head 16 as the upper electrode and the support table 2 as the lower electrode. At the same time, a magnetic field is formed by the magnetic field forming mechanism 21, and etching by plasma is performed in this state.
[0046]
Then, after the processing in the processing chamber 104 is completed, the semiconductor wafer is unloaded from the processing chamber 104 (55) and re-loaded into the alignment mechanism 103 (56) (arrow C in FIG. 1).
[0047]
In the positioning mechanism 103, the semiconductor wafer is rotated as described above, and the control device 34 detects (calculates) the deviation amount of the semiconductor wafer (57), and determines whether the deviation amount is larger than the reference value. Is determined (58).
[0048]
If the displacement is within the reference value, the value of the displacement is transferred to a log for recording the processing history (59), the semiconductor wafer is unloaded from the positioning mechanism 103 (60), and the semiconductor wafer is transferred to the cassette chamber. It is carried into the cassette in 105 (61) (arrow D in FIG. 1).
[0049]
On the other hand, if the deviation amount is larger than the reference value, an interlock process, for example, a process of issuing an alarm and stopping the apparatus is performed (62).
[0050]
As described above, in the present embodiment, the alignment is once performed by the alignment mechanism 103, and thereafter, the semiconductor wafer that has been transported by the transport mechanism 102 and the processing performed in the processing chamber 104 is transported to the alignment mechanism 103 again. Then, when the displacement amount of the semiconductor wafer is detected, for example, when the displacement of the semiconductor wafer occurs for some reason in the transporting process or the processing process, such a displacement of the semiconductor wafer can be detected. .
[0051]
If the semiconductor wafer is displaced before or during the transfer process or during the process as described above, the process is performed in a state where the semiconductor wafer is displaced, and undesired processing is performed. May be affected. In addition, when one semiconductor wafer is sequentially transferred to a plurality of processing chambers 104 and subjected to different processing continuously on one semiconductor wafer, misalignment occurs after processing in the first processing chamber 104. Even in this case, in the next processing chamber 104, the processing is performed in a state where the semiconductor wafer is displaced, and there is a possibility that an undesired processing is performed.
[0052]
If the above-described misalignment of the semiconductor wafers cannot be detected, the processing is performed in a state where a large number of semiconductor wafers are misaligned, and a large number of semiconductor wafers (for example, one lot of semiconductor wafers or the like) are processed. However, in the present embodiment, such a misalignment of the semiconductor wafer can be promptly detected. This can be prevented from occurring.
[0053]
The calculation of the positional deviation amount of the processed semiconductor wafers as described above may be performed for all the semiconductor wafers. However, in order to keep the throughput high, for example, the calculation is performed for each predetermined number of wafers or a new lot is processed. Perform the process on the first semiconductor wafer when starting the process, perform only on the dummy wafer before starting the process, or use the first semiconductor wafer when starting the process for the day. , Etc., at a predetermined timing.
[0054]
Incidentally, the above-described misalignment of the semiconductor wafer is caused, for example, by a malfunction of the transfer mechanism 102 or by a malfunction of a mechanism for vertically moving the semiconductor wafer provided in the processing chamber 104 (vacuum chamber 1). And those caused by the residual charge at the time of separation from the electrostatic chuck 6 and those caused by the pressure of a cooling gas (such as He gas) supplied to the back surface of the semiconductor wafer.
[0055]
Therefore, in order to know the cause of the misalignment of the semiconductor wafer, for example, alignment is once performed by the alignment mechanism 103, and then only the transfer is performed by the transfer mechanism 102, and the processing in the processing chamber 104 is performed. Without performing the detection, the position shift amount is again detected by the positioning mechanism 103. If no misalignment has occurred, the alignment is performed once by the alignment mechanism 103, and then only the transport by the transport mechanism 102 and the delivery to the processing chamber 104 are performed. The position shift amount is detected again by the positioning mechanism 103 without performing the processing. By detecting the stepwise displacement amount, the cause of the displacement of the semiconductor wafer can be clarified.
[0056]
Although the above embodiment has been described with reference to the case where the present invention is applied to an apparatus for transporting a semiconductor wafer under a vacuum atmosphere, the present invention can be similarly applied to an apparatus for transporting a semiconductor wafer under an atmospheric pressure. FIG. 5 shows a schematic configuration of an embodiment applied to such an apparatus.
[0057]
The substrate processing apparatus shown in FIG. 5 includes a plurality of (two in the apparatus of FIG. 5) process ships PS1 and PS2 constituting a processing mechanism for performing a predetermined process on a semiconductor wafer W, and a transport for transporting the semiconductor wafer W to these. It is configured by combining with a loader module LM constituting a mechanism.
[0058]
The loader module LM includes a plurality of (three in the apparatus of FIG. 5) load ports LP1 to LP3 for accommodating the semiconductor wafer W, a transfer chamber TR for transferring the semiconductor wafer W, and the above-described positioning for positioning the semiconductor wafer W. And (orienter) OR.
[0059]
An orienter OR is connected to the transfer chamber TR, process ships PS1 and PS2 are connected via load lock doors LG1 and LG2, and load ports LP1 to LP3 are connected via load port doors CG1 to CG3. Have been. In the load ports LP1 to LP3, cassettes or FOUPs CS1 to CS3 (hereinafter, the case of cassettes) for storing unprocessed semiconductor wafers W and processed semiconductor wafers W are installed.
[0060]
The transfer chamber TR is provided with two-stage loader arms LA1, LA2. The loader arms LA1, LA2 are connected between the load ports LP1 to LP3 and the process ships PS1, PS2 (load lock chambers LL1, LL2). The semiconductor wafer W is transferred to and from the orienter OR (the transfer of (1), (2), (6), and (7) in FIG. 5).
[0061]
The process ships PS1 and PS2 are provided with load lock chambers LL1 and LL2 and process chambers PM1 and PM2. The load lock chambers LL1 and LL2 and the process chambers PM1 and PM2 are connected to each other via process gates PG1 and PG2. ing.
[0062]
The load lock chambers LL1 and LL2 are provided with wafer mounting tables B11, B12, B21 and B22 and load lock arms LR1 and LR2, respectively. The semiconductor wafer W loaded from the loader module LM is loaded into the wafer mounting tables B11 and B21. Is placed, and the semiconductor wafer W carried out from the load lock chambers LL1 and LL2 is placed.
[0063]
Further, the semiconductor wafer W carried into the process chambers PM1 and PM2 is mounted on the wafer mounting tables B12 and B22. The load lock arms LR1 and LR2 transfer the semiconductor wafer W between the load lock chambers LL1 and LL2 and the process chambers PM1 and PM2 (transfer of (3), (4) and (5) in FIG. 5). .
[0064]
Here, in order to improve the efficiency of transfer, the transfer chamber TR is opened to the atmosphere, and the load port doors CG1 to CG3 are kept open. In order to prevent contamination, the process chambers PM1 and PM2 are maintained at a predetermined degree of vacuum. For this reason, in the load lock chambers LL1 and LL2, supply and exhaust are performed to correspond to the respective degrees of vacuum according to the transfer between the transfer chamber TR and the transfer between the process chambers PM1 and PM2. .
[0065]
Hereinafter, the operation of the substrate processing apparatus will be described by taking, as an example, a case where the transfer is performed between the load port LP1 and the process ship PS1.
[0066]
First, the loader arms LA1 and LA2 take out the semiconductor wafer W from the cassette CS1 placed on the load port LP1 and carry it into the orienter OR ((1)).
[0067]
When the semiconductor wafer W is carried in, the orienter OR rotates the semiconductor wafer W to detect the amount of displacement and positions the semiconductor wafer W as described above.
[0068]
When the steps such as the positioning of the semiconductor wafer W in the orienter OR as described above are completed, the loader arms LA1 and LA2 take out the semiconductor wafer W from the orienter OR. At this time, as described above, the loader arms LA1 and LA2 correct the eccentricity of the semiconductor wafer W based on the amount of eccentricity and the eccentricity direction detected by the orienter OR, and the center of the loader arms LA1 and LA2 and the semiconductor wafer W Support so that it matches the center.
[0069]
Then, with the inside at atmospheric pressure, the load lock door LG1 of the load lock chamber LL1 is opened, and the loader arms LA1 and LA2 carry the semiconductor wafer W into the load lock chamber LL1 and place the semiconductor wafer W on the wafer mounting table B11. (2).
[0070]
When the semiconductor wafer W is mounted on the wafer mounting table B11, the load lock door LG1 is closed, the load lock chamber LL1 is evacuated, and the load lock arm LR1 is connected to the semiconductor wafer W on the wafer mounting table B11. W is transferred to the wafer mounting table B12 ((3)).
[0071]
When the semiconductor wafer W is transferred to the wafer mounting table B12 and the semiconductor wafer W can be carried into the process chamber PM1, the process gate PG1 of the process chamber PM1 is opened, and the load lock arm LR1 is moved to the position above the wafer mounting table B12. The semiconductor wafer W is carried into the process chamber PM1 ([4]).
[0072]
When the semiconductor wafer W is carried into the process chamber PM1, the process gate PG1 is closed, and a predetermined process is performed on the semiconductor wafer W in the process chamber PM1. The predetermined processing is, for example, processing such as etching and film formation.
[0073]
When the processing of the semiconductor wafer W in the process chamber PM1 is completed and the semiconductor wafer W can be carried out to the load lock chamber LL1, the process gate PG1 is opened, and the load lock arm LR1 moves the semiconductor lock in the process chamber PM1. The wafer W is transferred to the wafer mounting table B11 ([5]).
[0074]
Then, the process gate PG1 is closed, and the atmosphere in the load lock chamber LL1 is opened. When the opening of the load lock chamber LL1 to the atmosphere is completed, the load lock door LG1 is opened according to the next loading timing of the semiconductor wafer W, and one of the loader arms LA1 and LA2 unloads the semiconductor wafer W on the wafer mounting table B11. Then, the loader arms LA1 and LA2 carry the next semiconductor wafer W positioned by the orienter OR into the load lock chamber LL1 ((2)).
[0075]
Then, the displacement amount of the processed semiconductor wafer W carried in by the orienter OR is detected, and if the displacement amount is equal to or smaller than the reference value, the semiconductor wafer W is carried into the load port LP1 ([7]). On the other hand, if the positional deviation exceeds the reference value, the interlock processing is performed in the same manner as described above. The detection of the positional deviation amount of the processed semiconductor wafer W as described above may be performed for all the semiconductor wafers W, or may be performed at a predetermined timing as in the above-described embodiment.
[0076]
As described above, even in the substrate processing apparatus in which the loader module LM is placed in a normal-pressure atmosphere, the same operation and effect as in the above-described embodiment can be obtained.
[0077]
【The invention's effect】
As described above in detail, according to the present invention, it is possible to detect a positional shift in a process of processing a substrate and a positional shift in a process of transporting a substrate, thereby preventing undesired processing from being performed continuously. Thus, the yield can be improved.
[Brief description of the drawings]
FIG. 1 is a view schematically showing a schematic configuration of a substrate processing apparatus according to an embodiment of the present invention.
FIG. 2 is a diagram schematically illustrating a main configuration of the substrate processing apparatus of FIG. 1;
FIG. 3 is a diagram schematically illustrating a main configuration of the substrate processing apparatus of FIG. 1;
FIG. 4 is a flowchart for explaining the operation of the substrate processing apparatus of FIG. 1;
FIG. 5 is a diagram schematically illustrating a schematic configuration of a substrate processing apparatus according to another embodiment of the present invention.
FIG. 6 is a diagram schematically showing a schematic configuration of a conventional substrate processing apparatus.
[Explanation of symbols]
101: substrate transfer chamber, 102: transfer mechanism, 103: alignment mechanism, 104: processing chamber (processing mechanism), 105: cassette chamber.

Claims (8)

A detection mechanism for detecting a displacement amount of the substrate from a predetermined position and performing positioning of the substrate;
A processing mechanism for performing a predetermined processing on the substrate,
And a transport mechanism for transporting the substrate,
A substrate processing apparatus that transports the substrate to the detection mechanism by the transport mechanism and transports the substrate to the processing mechanism in a positioned state to perform processing.
A substrate processing apparatus, wherein the processed substrate processed by the processing mechanism is transported to the detection mechanism, and a deviation amount of the processed substrate from a predetermined position can be detected. The substrate processing apparatus according to claim 1,
The detected deviation amount of the processed substrate from a predetermined position is compared with a preset reference value, and if the deviation amount exceeds the reference value, an interlock process is performed. Substrate processing equipment. The substrate processing apparatus according to claim 1 or 2,
A substrate, wherein when detecting a plurality of substrates continuously, the detection mechanism detects the amount of deviation of the processed substrate from a predetermined position at a desired timing. Processing equipment. A detection mechanism for detecting a displacement amount of the substrate from a predetermined position and performing positioning of the substrate;
A processing mechanism for performing a predetermined processing on the substrate,
And a transport mechanism for transporting the substrate,
A substrate processing apparatus that transports the substrate to the detection mechanism by the transport mechanism and transports the substrate to the processing mechanism in a positioned state to perform processing.
The substrate processing apparatus, wherein the substrate once conveyed and positioned by the detection mechanism is again conveyed to the detection mechanism, and a shift amount of the substrate from a predetermined position can be detected. A detection mechanism for detecting a displacement amount of the substrate from a predetermined position and performing positioning of the substrate;
A processing mechanism for performing a predetermined processing on the substrate,
And a transport mechanism for transporting the substrate,
A substrate processing method by a substrate processing apparatus that transports the substrate to the detection mechanism by the transport mechanism and transports the substrate to the processing mechanism in a positioned state to perform processing.
A substrate processing method, wherein the processed substrate processed by the processing mechanism is transported to the detection mechanism, and a deviation amount of the processed substrate from a predetermined position is detected. The substrate processing method according to claim 5, wherein
Comparing the detected deviation amount of the processed substrate from a predetermined position with a preset reference value, and stopping the processing if the deviation amount exceeds the reference value; Processing method. The substrate processing method according to claim 5, wherein
A substrate processing method, wherein when detecting a plurality of substrates continuously, a detection of a deviation amount of the processed substrate from a predetermined position by the detection mechanism is performed at a predetermined timing. A detection mechanism for detecting a displacement amount of the substrate from a predetermined position and performing positioning of the substrate;
A processing mechanism for performing a predetermined processing on the substrate,
And a transport mechanism for transporting the substrate,
A substrate processing method by a substrate processing apparatus that transports the substrate to the detection mechanism by the transport mechanism and transports the substrate to the processing mechanism in a positioned state to perform processing.
The substrate once conveyed and positioned by the detection mechanism is conveyed to the processing mechanism by the conveyance mechanism, and then conveyed again to the detection mechanism by the conveyance mechanism, and detects a shift amount of the substrate from a predetermined position. A substrate processing method characterized by the above-mentioned.

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