JP3429786B2 - Semiconductor manufacturing equipment - Google Patents
Semiconductor manufacturing equipmentInfo
- Publication number
- JP3429786B2 JP3429786B2 JP13652392A JP13652392A JP3429786B2 JP 3429786 B2 JP3429786 B2 JP 3429786B2 JP 13652392 A JP13652392 A JP 13652392A JP 13652392 A JP13652392 A JP 13652392A JP 3429786 B2 JP3429786 B2 JP 3429786B2
- Authority
- JP
- Japan
- Prior art keywords
- processed
- processing chamber
- vacuum processing
- vacuum
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Landscapes
- Drying Of Semiconductors (AREA)
- Manipulator (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体製造装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus.
【０００２】[0002]
【従来の技術】一般に、半導体デバイスの製造工程にお
いては、真空処理室内に半導体ウエハ等の被処理物を設
け、減圧雰囲気下で処理を行う工程が多い。2. Description of the Related Art Generally, in a semiconductor device manufacturing process, there are many processes in which an object to be processed such as a semiconductor wafer is provided in a vacuum processing chamber and processing is performed under a reduced pressure atmosphere.
【０００３】このように減圧雰囲気下で処理を施す半導
体製造装置では、半導体ウエハ等の被処理物を真空処理
室内に搬入・搬出する度に、真空処理室内を常圧に戻す
と、再び真空処理室内を減圧して処理を開始するまでに
多くの時間を要し、スループットの悪化を招く。このた
め、真空処理室に隣接して、内部の容積の少ない予備真
空室いわゆるロードロック室を設けたものが多い。In the semiconductor manufacturing apparatus that performs processing in a reduced pressure atmosphere as described above, the vacuum processing is performed again when the inside of the vacuum processing chamber is returned to normal pressure each time an object to be processed such as a semiconductor wafer is carried in and out of the vacuum processing chamber. It takes a lot of time to depressurize the chamber and start the process, which leads to deterioration of throughput. Therefore, in many cases, a pre-vacuum chamber having a small internal volume, a so-called load lock chamber, is provided adjacent to the vacuum processing chamber.
【０００４】すなわち、図６に示すように、減圧雰囲気
下で処理を行う従来の半導体製造装置（例えばエッチン
グ装置等）では、真空処理室２に隣接して2 つのロード
ロック室３ａ、３ｂを設け、一方のロードロック室３ａ
を介して半導体ウエハ等の被処理物４を真空処理室２内
に搬送アーム５ａにより搬入し、他方のロードロック室
３ｂを介して処理の終了した半導体ウエハ等の被処理物
４を搬送アーム５ｂにより搬出するようにする。このよ
うにして、真空処理室２内を常圧に戻すことなく半導体
ウエハ等の被処理物４を、真空処理室２内に搬入・搬出
するようにして、スループットの向上を図っている。That is, as shown in FIG. 6, in a conventional semiconductor manufacturing apparatus (for example, an etching apparatus) which performs processing under a reduced pressure atmosphere, two load lock chambers 3a and 3b are provided adjacent to the vacuum processing chamber 2. , One load lock chamber 3a
The object 4 to be processed such as a semiconductor wafer is carried into the vacuum processing chamber 2 by the transfer arm 5a, and the processed object 4 such as a semiconductor wafer to be processed is transferred via the other load lock chamber 3b to the transfer arm 5b. So that they can be carried out. In this way, the workpiece 4 such as a semiconductor wafer is carried in and out of the vacuum processing chamber 2 without returning the inside of the vacuum processing chamber 2 to the normal pressure, and the throughput is improved.
【０００５】なお、エッチング装置の場合、真空処理室
２内に、上部電極５０と下部電極５１が配置されてい
る。上部電極５０には、多数のガス供給口５２が設けら
れており、ここから下部電極５１上に載置した半導体ウ
エハ等の被処理物４に所定のエッチングガスを供給す
る。一方、下部電極５１には、半導体ウエハ等の被処理
物４を冷却するための冷媒循環機構５３と、電極間に所
定の高周波電圧を印加するための高周波電源５４、マッ
チング回路５５が設けられている。また。真空処理室２
およびロードロック室３ａ、３ｂには、それぞれ図示し
ない真空ポンプに接続された排気配管５６が接続されて
おり、これらの内部を真空排気可能に構成されている。In the case of the etching apparatus, the upper electrode 50 and the lower electrode 51 are arranged in the vacuum processing chamber 2. The upper electrode 50 is provided with a large number of gas supply ports 52, from which a predetermined etching gas is supplied to the processing object 4 such as a semiconductor wafer mounted on the lower electrode 51. On the other hand, the lower electrode 51 is provided with a coolant circulation mechanism 53 for cooling the workpiece 4 such as a semiconductor wafer, a high frequency power supply 54 for applying a predetermined high frequency voltage between the electrodes, and a matching circuit 55. There is. Also. Vacuum processing chamber 2
An exhaust pipe 56 connected to a vacuum pump (not shown) is connected to each of the load lock chambers 3a and 3b, and the inside of these pipes can be evacuated.
【０００６】ところで、半導体デバイスの製造工程にお
いては、塵埃が微細な回路パターンの形成に悪影響を及
ぼす。このため、半導体製造装置は天井から床に向けて
清浄化空気の流れ（ダウンフロー）が形成されたクリー
ンルーム内に配置される。In the manufacturing process of semiconductor devices, dust adversely affects the formation of fine circuit patterns. Therefore, the semiconductor manufacturing apparatus is arranged in a clean room in which a flow (downflow) of purified air is formed from the ceiling toward the floor.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、近年半
導体デバイスは、急速に高集積化および微細化される傾
向にある。このため半導体製造工程においては、工程数
の増加に伴って半導体製造装置数が増大し、これらの装
置を収容するクリーンルーム面積の増大により、設備コ
ストが増大し、製品コストの上昇を招くという問題が発
生している。However, in recent years, semiconductor devices tend to be highly integrated and miniaturized rapidly. Therefore, in the semiconductor manufacturing process, the number of semiconductor manufacturing devices increases as the number of processes increases, and the area of the clean room for accommodating these devices increases, resulting in an increase in equipment cost and an increase in product cost. It has occurred.
【０００８】本発明は、かかる従来の事情に対処してな
されたもので、従来に較べて装置コストを低減すること
ができるとともに、設置スペースを削減することがで
き、設備コストの削減による製品コストの低減を図るこ
とのできる半導体製造装置を提供しようとするものであ
る。The present invention has been made in response to such a conventional situation, and it is possible to reduce the device cost as compared with the conventional one, reduce the installation space, and reduce the product cost by reducing the facility cost. The present invention is intended to provide a semiconductor manufacturing apparatus capable of reducing the above.
【０００９】[0009]
【００１０】[0010]
【課題を解決するための手段】すなわち、請求項１記載
の半導体製造装置は、減圧雰囲気下で１つずつ被処理物
に所定の処理を施す真空処理室と、前記真空処理室に隣
接して設けられ、内部に、前記被処理物を搬送するため
の１つの搬送アームと、２つの前記被処理物を支持する
ための支持機構とを備え、前記被処理物の搬入・搬出時
に、常圧及び所定の真空度とされる予備真空室とを具備
し、前記真空処理室において所定の処理が施された前記
被処理物を前記支持機構の一方で支持し、前記真空処理
室において所定の処理が施される前の前記被処理物を前
記支持機構の他方で支持するように構成し、前記真空処
理室と前記予備真空室との間で前記被処理物を搬出入可
能な状態において前記搬送アームは、所定の処理が施さ
れた前記被処理物を前記真空処理室内から前記支持機構
の一方に搬送し、所定の処理が施される前の前記被処理
物を前記支持機構の他方から前記真空処理室内に搬送す
る、よう構成されたことを特徴とする。請求項２記載の
半導体製造装置は、請求項１記載の半導体製造装置にお
いて、前記支持機構は、上下棚状に２つの前記被処理物
を支持可能、且つ、駆動機構によって上下動可能に構成
されていることを特徴とする。請求項３記載の半導体製
造装置は、請求項１記載の半導体製造装置において、前
記支持機構は、前記搬送アームの上方位置で２つの前記
被処理物を支持可能、且つ、駆動機構によって上下動可
能に構成されていることを特徴とする。That is, a semiconductor manufacturing apparatus according to a first aspect of the present invention is such that a vacuum processing chamber that performs a predetermined process on objects to be processed one by one under a reduced pressure atmosphere, and a vacuum processing chamber adjacent to the vacuum processing chamber. At the time of loading and unloading of the object to be processed , provided therein is one transfer arm for transferring the object to be processed and a support mechanism for supporting the two objects to be processed.
And a pre-vacuum chamber that has a normal pressure and a predetermined degree of vacuum, and supports the object to be processed, which has been subjected to a predetermined process in the vacuum processing chamber, by one of the supporting mechanisms. Is configured to be supported by the other one of the support mechanisms before the predetermined processing is performed, and the processing target can be carried in and out between the vacuum processing chamber and the preliminary vacuum chamber. In this state, the transfer arm transfers the object to be processed, which has been subjected to a predetermined processing, from the vacuum processing chamber to one of the support mechanisms, and the object to be processed before the predetermined processing is applied to the support mechanism. It is configured such that it is transported from the other side into the vacuum processing chamber. A semiconductor manufacturing apparatus according to a second aspect is the semiconductor manufacturing apparatus according to the first aspect, wherein the support mechanism is configured to support the two objects to be processed in upper and lower shelves and to be vertically movable by a drive mechanism. It is characterized by The semiconductor manufacturing apparatus according to claim 3 is the semiconductor manufacturing apparatus according to claim 1, wherein the support mechanism is capable of supporting the two objects to be processed at a position above the transfer arm, and is vertically movable by a drive mechanism. It is characterized in that it is configured.
【００１１】[0011]
【作用】本発明の半導体製造装置では、予備真空室を1
つとすることによって、装置コストの低減および設置ス
ペースの削減を実現することができる。また、予備真空
室内に設けた被処理物を支持するための支持機構あるい
は2 つの被処理物を支持して搬送可能に構成された搬送
アームによって、2 つの被処理物を取扱うことができる
ため、効率的に搬入・搬出を実施することができ、搬入
用予備真空室と搬出用予備真空室の2 つの予備真空室を
備えた従来の半導体製造装置とほぼ同様なスループット
を確保することができる。In the semiconductor manufacturing apparatus of the present invention, the preliminary vacuum chamber is
As a result, it is possible to reduce the device cost and the installation space. In addition, since two supporting objects can be handled by the support mechanism provided in the preliminary vacuum chamber for supporting the processing object or the transfer arm configured to support and transfer the two processing objects, It is possible to carry out and carry out efficiently, and it is possible to secure almost the same throughput as that of a conventional semiconductor manufacturing apparatus equipped with two preliminary vacuum chambers, a preliminary vacuum chamber for carry-in and a preliminary vacuum chamber for carry-out.
【００１２】したがって、従来に較べて装置コストを低
減することができるとともに、設置スペースを削減する
ことができ、設備コストの削減による製品コストの低減
を図ることができる。Therefore, the apparatus cost can be reduced as compared with the conventional case, the installation space can be reduced, and the product cost can be reduced by reducing the facility cost.
【００１３】[0013]
【実施例】以下、本発明を半導体ウエハにエッチング処
理を施すエッチング装置に適用した実施例を図面を参照
して説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment in which the present invention is applied to an etching apparatus for etching a semiconductor wafer will be described below with reference to the drawings.
【００１４】図１に示すように、エッチング装置１に
は、減圧雰囲気下で半導体ウエハにエッチング処理を施
す真空処理室２が設けられている。この真空処理室２の
側方に隣接して、予備真空室３が1 つのみ設けられてお
り、予備真空室３内には、半導体ウエハ４を搬送するた
めの搬送アーム５と、上下に棚状に2 枚の半導体ウエハ
４を支持可能に構成されたウエハ支持機構６が設けられ
ている。このウエハ支持機構６は、図示しない駆動機構
により、上下動可能に構成されている。As shown in FIG. 1, the etching apparatus 1 is provided with a vacuum processing chamber 2 for etching a semiconductor wafer under a reduced pressure atmosphere. Only one preliminary vacuum chamber 3 is provided adjacent to the side of the vacuum processing chamber 2, and in the preliminary vacuum chamber 3, a transfer arm 5 for transferring a semiconductor wafer 4 and a vertical rack are installed. A wafer support mechanism 6 configured to support two semiconductor wafers 4 is provided. The wafer support mechanism 6 is vertically movable by a drive mechanism (not shown).
【００１５】また、予備真空室３には、ゲートバルブ７
ａを備えた搬入・搬出用開口７が設けられており、この
搬入・搬出用開口７の外側には、カセット載置台８が設
けられている。このカセット載置台８は、複数枚（例え
ば25枚程度）の半導体ウエハ４を収容したウエハカセッ
ト９を1 台あるいは数台（図示のものでは2 台）載置で
きるよう構成されている。図示矢印の如く、このウエハ
カセット９は、ボールスクリュー１２を駆動して上下動
させることができるとともに他のスクリュー１２ａによ
ってスライド台８ａを介して左右動できるよう構成され
ている。Further, in the preliminary vacuum chamber 3, a gate valve 7 is provided.
A loading / unloading opening 7 having a is provided, and a cassette mounting table 8 is provided outside the loading / unloading opening 7. The cassette mounting table 8 is configured so that one or several (two in the illustrated example) wafer cassettes 9 accommodating a plurality of (for example, about 25) semiconductor wafers 4 can be mounted. As shown by the arrow in the figure, the wafer cassette 9 is configured to be able to drive the ball screw 12 to move up and down and to move left and right by the other screw 12a via the slide base 8a.
【００１６】また、真空処理室２と予備真空室３との間
には、ゲートバルブ１０ａを備えた搬入・搬出用開口１
０が設けられている（図２参照）。なお、予備真空室３
には、排気管３３と仕切り弁３３ａを介して真空ポンプ
３５が接続され、予備真空室３の内部を所定の真空度に
排気可能に構成されている。また、予備真空室３内をパ
ージするためのＮ２ガス源３４が、仕切り弁３２ａと供
給管３２を介して予備真空室３に接続されている。真空
処理室２にも同様に真空源とＮ２ガス源が接続されてい
る。Further, between the vacuum processing chamber 2 and the preliminary vacuum chamber 3, a loading / unloading opening 1 equipped with a gate valve 10a is provided.
0 is provided (see FIG. 2). The preliminary vacuum chamber 3
A vacuum pump 35 is connected to the vacuum pump 35 via an exhaust pipe 33 and a partition valve 33a so that the inside of the preliminary vacuum chamber 3 can be exhausted to a predetermined vacuum degree. Further, an N 2 gas source 34 for purging the inside of the preliminary vacuum chamber 3 is connected to the preliminary vacuum chamber 3 via a partition valve 32 a and a supply pipe 32. A vacuum source and an N 2 gas source are similarly connected to the vacuum processing chamber 2.
【００１７】次に、上記構成の本実施例のエッチング装
置１の動作を説明する。Next, the operation of the etching apparatus 1 of the present embodiment having the above structure will be described.
【００１８】まず、カセット載置台８を上下動及び左右
動させてウエハカセット９を搬入・搬出用開口７に位置
させ、搬入・搬出用開口１０を閉じた状態で、搬入・搬
出用開口７を開け、搬送アーム５をＯ点を中心に旋回さ
せて、カセット載置台８に設けたウエハカセット９か
ら、一枚ずつ半導体ウエハ４を取り出し、予備真空室３
内に搬入する。そして、搬送アーム５のアーム５０を伸
ばして上下どちらか一方のウエハ支持機構６上に半導体
ウエハ４を位置させ、この状態でウエハ支持機構６を上
昇させることにより、半導体ウエハ４をウエハ支持機構
６に受け渡す。この際、アーム５０の伸縮には2 〜3 秒
要する。また、この際、半導体ウエハ４が搬送アーム５
上で移動するとダストが生じるので、極力その移動を阻
止する。First, the cassette mounting table 8 is moved up and down and left and right to position the wafer cassette 9 in the loading / unloading opening 7, and the loading / unloading opening 7 is opened with the loading / unloading opening 10 closed. The transfer arm 5 is opened, the transfer arm 5 is rotated about the point O, and the semiconductor wafers 4 are taken out one by one from the wafer cassette 9 provided on the cassette mounting table 8.
Bring it in. Then, the arm 50 of the transfer arm 5 is extended to position the semiconductor wafer 4 on one of the upper and lower wafer support mechanisms 6, and in this state, the wafer support mechanism 6 is lifted to move the semiconductor wafer 4 to the wafer support mechanism 6. Hand over to. At this time, it takes 2-3 seconds for the arm 50 to expand and contract. At this time, the semiconductor wafer 4 is transferred to the transfer arm 5.
If you move it up, dust will be generated, so prevent it from moving as much as possible.
【００１９】次に、予備真空室３の搬入・搬出用開口７
を閉じて予備真空室３内の排気を真空ポンプ３５により
実施し、予備真空室３内が所定の真空度に到達した後、
Ｎ２ガスを導入してパージを行い、搬入・搬出用開口１
０を開ける。この際、予備真空室３の真空引きには通常
３０〜４０秒、また、Ｎ２によるパージには３０〜４０
秒要する。そして、搬送アーム５によって、真空処理室
２内の処理部に設けられた処理済みの半導体ウエハ４を
取り出し、上述したようにして予備真空室３内の空いて
いる方のウエハ支持機構６に受け渡す。Next, the loading / unloading opening 7 of the preliminary vacuum chamber 3
Is closed and the interior of the preliminary vacuum chamber 3 is evacuated by the vacuum pump 35, and after the interior of the preliminary vacuum chamber 3 reaches a predetermined degree of vacuum,
N 2 gas is introduced and purged, and loading / unloading opening 1
Open 0 At this time, it is usually 30 to 40 seconds for evacuation of the preliminary vacuum chamber 3, and 30 to 40 seconds for purging with N 2.
It takes seconds. Then, the processed semiconductor wafer 4 provided in the processing section in the vacuum processing chamber 2 is taken out by the transfer arm 5 and is received by the wafer support mechanism 6 in the free vacuum chamber 3 in the free vacuum chamber 3 as described above. hand over.
【００２０】この後、搬送アーム５によって、ウエハ支
持機構６に支持された未処理の半導体ウエハ４を搬送
し、真空処理室２内の処理部にこの未処理の半導体ウエ
ハ４を配置する。Thereafter, the unprocessed semiconductor wafer 4 supported by the wafer support mechanism 6 is carried by the transfer arm 5, and the unprocessed semiconductor wafer 4 is placed in the processing section in the vacuum processing chamber 2.
【００２１】しかる後、搬入・搬出用開口１０を閉じ、
予備真空室３内を常圧に戻し、搬入・搬出用開口７を開
ける。そして、搬送アーム５によって、ウエハ支持機構
６に支持された処理済みの半導体ウエハ４を搬出し、カ
セット載置台８に設けたウエハカセット９内に戻す。こ
の時、真空処理室２内では、上述のようにして搬入した
半導体ウエハ４のエッチング処理を並行して行う。Then, the loading / unloading opening 10 is closed,
The inside of the preliminary vacuum chamber 3 is returned to normal pressure, and the loading / unloading opening 7 is opened. Then, the processed semiconductor wafer 4 supported by the wafer support mechanism 6 is unloaded by the transfer arm 5 and returned into the wafer cassette 9 provided on the cassette mounting table 8. At this time, in the vacuum processing chamber 2, the etching process of the semiconductor wafer 4 carried in as described above is performed in parallel.
【００２２】そして、ウエハカセット９内に未処理の半
導体ウエハ４がある場合は、次の半導体ウエハ４を上述
したようにして真空処理室２内の処理部に配置し、エッ
チング処理を行う。Then, when there is an unprocessed semiconductor wafer 4 in the wafer cassette 9, the next semiconductor wafer 4 is placed in the processing section in the vacuum processing chamber 2 as described above, and the etching process is performed.
【００２３】このように、本実施例のエッチング装置１
では、真空処理室２に対して、予備真空室３が1 つのみ
設けられているので、搬入用予備真空室と搬出用予備真
空室の2 つの予備真空室を備えた従来の装置に較べて装
置コストの低減および設置スペースの削減を行うことが
できる。Thus, the etching apparatus 1 of this embodiment
In contrast, since only one spare vacuum chamber 3 is provided for the vacuum processing chamber 2, compared to a conventional device equipped with two spare vacuum chambers, a carry-in spare vacuum chamber and a carry-out spare vacuum chamber. It is possible to reduce the device cost and the installation space.
【００２４】また、予備真空室３内に設けられたウエハ
支持機構６に、一旦半導体ウエハ４を仮置きすることに
より、効率的に半導体ウエハ４の搬入・搬出を実施する
ことができ、搬入用予備真空室と搬出用予備真空室の2
つの予備真空室を備えた従来の装置とほぼ同様なスルー
プットを確保することができる。Further, by temporarily placing the semiconductor wafer 4 on the wafer support mechanism 6 provided in the preliminary vacuum chamber 3, the semiconductor wafer 4 can be efficiently loaded and unloaded, and the semiconductor wafer 4 can be loaded and unloaded. 2 of preliminary vacuum chamber and preliminary vacuum chamber for carry-out
It is possible to ensure almost the same throughput as the conventional device equipped with two preliminary vacuum chambers.
【００２５】なお、例えば予備真空室３内にウエハ支持
機構６がない場合は、これに半導体ウエハ４を仮置きす
ることができないので、処理済みの半導体ウエハ４を搬
出してからでないと、次の半導体ウエハ４の搬入動作を
実施することができず、大幅なスループットの低下を招
くことになる。If, for example, the wafer supporting mechanism 6 is not provided in the preliminary vacuum chamber 3, the semiconductor wafer 4 cannot be temporarily placed on it. Therefore, the processed semiconductor wafer 4 must be carried out. Since the semiconductor wafer 4 cannot be carried in, the throughput is significantly reduced.
【００２６】したがって、従来に較べて装置コストを低
減することができるとともに、設置スペースを削減する
ことができ、設備コストの削減による製品コストの低減
を図ることができる。Therefore, the apparatus cost can be reduced as compared with the conventional case, the installation space can be reduced, and the product cost can be reduced by reducing the facility cost.
【００２７】次に、図２および図３に、本発明の第２の
実施例の半導体製造装置を示す。この第２の実施例で
は、予備真空室３内には、天井部から吊り下げられる如
く、ウエハ支持機構６ａが2 つ設けられている。これら
のウエハ支持機構６ａは、天井部に設けた液圧シリンダ
等の往復動機構１３により上下動可能に構成されてい
て、そのロッド１３ａはベロー１４によって保護されて
いる。図中に矢印で示すように液圧シリンダ１５のロッ
ド１５ａによって回動可能に構成された複数の爪２０に
よって、半導体ウエハ４の周縁部を係止するよう構成さ
れている。そして、搬送アーム５によって半導体ウエハ
４を搬送し、ウエハ支持機構６ａの下方に位置させる
と、ウエハ支持機構６ａが、爪２０の回動によって半導
体ウエハ４を係止し、この後僅かに上昇することによ
り、半導体ウエハ４を搬送アーム５から受け取る。一
方、爪２０の逆の動作によって、その係止を解除してこ
の半導体ウエハ４を搬送アーム５に受け渡すよう構成さ
れている。Next, FIGS. 2 and 3 show a semiconductor manufacturing apparatus according to a second embodiment of the present invention. In the second embodiment, two wafer support mechanisms 6a are provided in the preliminary vacuum chamber 3 so as to be suspended from the ceiling. The wafer support mechanism 6a is configured to be vertically movable by a reciprocating mechanism 13 such as a hydraulic cylinder provided on the ceiling, and its rod 13a is protected by a bellows 14. As shown by the arrow in the figure, a plurality of claws 20 that are configured to be rotatable by a rod 15a of a hydraulic cylinder 15 are configured to lock the peripheral edge of the semiconductor wafer 4. Then, when the semiconductor wafer 4 is transferred by the transfer arm 5 and is positioned below the wafer supporting mechanism 6a, the wafer supporting mechanism 6a locks the semiconductor wafer 4 by the rotation of the claw 20, and then slightly moves up. As a result, the semiconductor wafer 4 is received from the transfer arm 5. On the other hand, the reverse operation of the claw 20 releases the locking and transfers the semiconductor wafer 4 to the transfer arm 5.
【００２８】このように構成された予備真空室３を用い
れば、前述した実施例と同様な効果を得ることができる
とともに、予備真空室３をより小形化することができ、
例えばその内部の排気に要する時間の短縮等を図ること
ができる。By using the preliminary vacuum chamber 3 thus constructed, the same effects as those of the above-described embodiment can be obtained, and the preliminary vacuum chamber 3 can be made smaller.
For example, the time required for exhausting the inside can be shortened.
【００２９】上述した各実施例では、予備真空室３内に
ウエハ支持機構６、６ａを設けた例について説明した
が、例えば図４および図５に示すように、2 枚の半導体
ウエハ４を支持可能に構成された搬送アーム５ａを用い
ることもできる。In each of the above-described embodiments, an example in which the wafer support mechanisms 6 and 6a are provided in the preliminary vacuum chamber 3 has been described. However, as shown in FIGS. 4 and 5, for example, two semiconductor wafers 4 are supported. It is also possible to use the transfer arm 5a configured as possible.
【００３０】すなわち、この第３の実施例では、搬送ア
ーム５ａは、軸３０を中心として回動可能に構成され、
2 枚の半導体ウエハ４を支持可能に構成されたウエハ支
持部３１を備えており、ウエハ支持部３１を軸３０を中
心に回転させることにより、例えば処理済みの半導体ウ
エハ４のアンロード動作と、未処理の半導体ウエハ４の
ロード動作とを続けて行うことができるよう構成されて
いる。このような搬送アーム５ａを用いれば、前述した
実施例のようにウエハ支持機構６、６ａ等を使用せずに
スループットの低下を防止することができる。また、例
えば前述した搬送アーム５等を、例えば上下2 段に重ね
る如く予備真空室内に2 つ設け、2 枚の半導体ウエハ４
を支持できるようにしてもよい。That is, in the third embodiment, the transfer arm 5a is configured to be rotatable around the shaft 30.
A wafer supporting portion 31 configured to support two semiconductor wafers 4 is provided. By rotating the wafer supporting portion 31 about an axis 30, for example, an unloading operation of the processed semiconductor wafer 4 and The unprocessed semiconductor wafer 4 is continuously loaded and loaded. By using such a transfer arm 5a, it is possible to prevent a decrease in throughput without using the wafer supporting mechanisms 6 and 6a as in the above-described embodiment. In addition, for example, two transfer arms 5 and the like described above are provided in the preliminary vacuum chamber so as to be stacked in two stages, for example, two semiconductor wafers 4
May be supported.
【００３１】なお、本発明は、エッチング装置に限ら
ず、真空雰囲気下で処理を行う枚葉式の半導体製造装置
であればあらゆる装置に適用することができる。The present invention is not limited to the etching apparatus, but can be applied to any apparatus as long as it is a single-wafer type semiconductor manufacturing apparatus that performs processing in a vacuum atmosphere.
【００３２】[0032]
【発明の効果】以上説明したように、本発明の半導体製
造装置によれば、従来に較べて装置コストを低減するこ
とができるとともに、設置スペースを削減することがで
き、設備コストの削減による製品コストの低減を図るこ
とができる。As described above, according to the semiconductor manufacturing apparatus of the present invention, the apparatus cost can be reduced and the installation space can be reduced as compared with the prior art, and the product cost can be reduced. The cost can be reduced.
【図１】本発明の一実施例の半導体製造装置の構成を示
す図である。FIG. 1 is a diagram showing a configuration of a semiconductor manufacturing apparatus according to an embodiment of the present invention.
【図２】本発明の他の実施例の予備真空室の構成を示す
図である。FIG. 2 is a diagram showing a configuration of a preliminary vacuum chamber according to another embodiment of the present invention.
【図３】図２の予備真空室の横断面図である。3 is a cross-sectional view of the preliminary vacuum chamber of FIG.
【図４】本発明の他の実施例の搬送アームの構成を示す
図である。FIG. 4 is a diagram showing a configuration of a transfer arm according to another embodiment of the present invention.
【図５】図４の搬送アームの側面図である。5 is a side view of the transfer arm of FIG. 4. FIG.
【図６】従来の半導体製造装置の構成を示す図である。FIG. 6 is a diagram showing a configuration of a conventional semiconductor manufacturing apparatus.
１ エッチング装置 ２ 真空処理室 ３ 予備真空室 ４ 半導体ウエハ ５ 搬送アーム ６ ウエハ支持機構 ７ 搬入・搬出用開口 ８ カセット載置台 ９ ウエハカセット １０ 搬入・搬出用開口 1 Etching equipment 2 vacuum processing chamber 3 preliminary vacuum chamber 4 Semiconductor wafer 5 Transfer arm 6 Wafer support mechanism 7 Loading / unloading openings 8 cassette mounting table 9 Wafer cassette 10 Loading / unloading openings
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ Ｈ０１Ｌ 21/3065 Ｈ０１Ｌ 21/302 Ｂ (56)参考文献 特開 昭63−153270（ＪＰ，Ａ) 特開 平２−140948（ＪＰ，Ａ) 特開 昭62−216314（ＪＰ，Ａ) 特開 昭63−27035（ＪＰ，Ａ) 特開 平３−273606（ＪＰ，Ａ) 特開 平４−87785（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/68 ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 Identification code FI H01L 21/3065 H01L 21/302 B (56) References JP-A 63-153270 (JP, A) JP-A 2-140948 ( JP, A 62-216314 (JP, A) JP 63-27035 (JP, A) JP 3-273606 (JP, A) JP 4-87785 (JP, A) (58) ) Fields surveyed (Int.Cl. 7 , DB name) H01L 21/68
Claims (3)
の処理を施す真空処理室と、 前記真空処理室に隣接して設けられ、内部に、前記被処
理物を搬送するための１つの搬送アームと、２つの前記
被処理物を支持するための支持機構とを備え、前記被処
理物の搬入・搬出時に、常圧及び所定の真空度とされる
予備真空室とを具備し、 前記真空処理室において所定の処理が施された前記被処
理物を前記支持機構の一方で支持し、前記真空処理室に
おいて所定の処理が施される前の前記被処理物を前記支
持機構の他方で支持するように構成し、 前記真空処理室と前記予備真空室との間で前記被処理物
を搬出入可能な状態において前記搬送アームは、所定の
処理が施された前記被処理物を前記真空処理室内から前
記支持機構の一方に搬送し、所定の処理が施される前の
前記被処理物を前記支持機構の他方から前記真空処理室
内に搬送する、 よう構成されたことを特徴とする半導体製造装置。1. A vacuum processing chamber for performing a predetermined process on objects to be processed one by one under a reduced pressure atmosphere, and a vacuum processing chamber provided adjacent to the vacuum processing chamber, for transporting the objects to be processed therein. one of the transfer arms, two of said a supporting mechanism for supporting an object to be processed, the object to be punished
And a support mechanism for supporting the object to be processed which has been subjected to a predetermined process in the vacuum processing chamber. Of the vacuum processing chamber before the predetermined processing is performed in the vacuum processing chamber is supported by the other of the support mechanism, between the vacuum processing chamber and the preliminary vacuum chamber In the state where the object to be processed can be carried in and out, the transfer arm transfers the object to be processed, which has been subjected to a predetermined process, from the vacuum processing chamber to one of the supporting mechanisms, and the predetermined process is performed. A semiconductor manufacturing apparatus configured to convey the previous object to be processed from the other side of the support mechanism into the vacuum processing chamber.
被処理物を支持可能、且つ、駆動機構によって上下動可
能に構成されていることを特徴とする請求項１記載の半
導体製造装置。2. The semiconductor manufacturing apparatus according to claim 1, wherein the support mechanism is configured to support the two objects to be processed in upper and lower shelves and to be vertically movable by a drive mechanism. .
位置で２つの前記被処理物を支持可能、且つ、駆動機構
によって上下動可能に構成されていることを特徴とする
請求項１記載の半導体製造装置。3. The support mechanism according to claim 1, wherein the support mechanism is capable of supporting the two objects to be processed at a position above the transfer arm, and is vertically movable by a drive mechanism. Semiconductor manufacturing equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13652392A JP3429786B2 (en) | 1991-05-29 | 1992-05-28 | Semiconductor manufacturing equipment |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3-124261 | 1991-05-29 | ||
| JP12426191 | 1991-05-29 | ||
| JP13652392A JP3429786B2 (en) | 1991-05-29 | 1992-05-28 | Semiconductor manufacturing equipment |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003059774A Division JP2003303818A (en) | 1991-05-29 | 2003-03-06 | Semiconductor manufacturing apparatus |
| JP2003059773A Division JP2003309113A (en) | 1991-05-29 | 2003-03-06 | Semiconductor manufacturing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05198660A JPH05198660A (en) | 1993-08-06 |
| JP3429786B2 true JP3429786B2 (en) | 2003-07-22 |
Family
ID=26460965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13652392A Expired - Fee Related JP3429786B2 (en) | 1991-05-29 | 1992-05-28 | Semiconductor manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3429786B2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4312965B2 (en) * | 1999-01-12 | 2009-08-12 | 東京エレクトロン株式会社 | Vacuum processing equipment |
| JP4607301B2 (en) * | 1999-09-06 | 2011-01-05 | 東京エレクトロン株式会社 | Semiconductor processing apparatus and semiconductor processing system |
| US6918731B2 (en) | 2001-07-02 | 2005-07-19 | Brooks Automation, Incorporated | Fast swap dual substrate transport for load lock |
| JP4908771B2 (en) * | 2005-04-27 | 2012-04-04 | 東京エレクトロン株式会社 | Processing device system |
| KR20150038360A (en) * | 2007-05-18 | 2015-04-08 | 브룩스 오토메이션 인코퍼레이티드 | Compact substrate transport system with fast swap robot |
| JP2014150109A (en) * | 2013-01-31 | 2014-08-21 | Disco Abrasive Syst Ltd | Decompression processing apparatus |
| CA3117253A1 (en) | 2018-10-23 | 2020-04-30 | Asml Netherlands B.V. | Inspection apparatus |
-
1992
- 1992-05-28 JP JP13652392A patent/JP3429786B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05198660A (en) | 1993-08-06 |
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