JP3429786B2 - Semiconductor manufacturing equipment - Google Patents
Semiconductor manufacturing equipmentInfo
- Publication number
- JP3429786B2 JP3429786B2 JP13652392A JP13652392A JP3429786B2 JP 3429786 B2 JP3429786 B2 JP 3429786B2 JP 13652392 A JP13652392 A JP 13652392A JP 13652392 A JP13652392 A JP 13652392A JP 3429786 B2 JP3429786 B2 JP 3429786B2
- Authority
- JP
- Japan
- Prior art keywords
- processed
- processing chamber
- vacuum processing
- vacuum
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Manipulator (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、半導体製造装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus.
【0002】[0002]
【従来の技術】一般に、半導体デバイスの製造工程にお
いては、真空処理室内に半導体ウエハ等の被処理物を設
け、減圧雰囲気下で処理を行う工程が多い。2. Description of the Related Art Generally, in a semiconductor device manufacturing process, there are many processes in which an object to be processed such as a semiconductor wafer is provided in a vacuum processing chamber and processing is performed under a reduced pressure atmosphere.
【0003】このように減圧雰囲気下で処理を施す半導
体製造装置では、半導体ウエハ等の被処理物を真空処理
室内に搬入・搬出する度に、真空処理室内を常圧に戻す
と、再び真空処理室内を減圧して処理を開始するまでに
多くの時間を要し、スループットの悪化を招く。このた
め、真空処理室に隣接して、内部の容積の少ない予備真
空室いわゆるロードロック室を設けたものが多い。In the semiconductor manufacturing apparatus that performs processing in a reduced pressure atmosphere as described above, the vacuum processing is performed again when the inside of the vacuum processing chamber is returned to normal pressure each time an object to be processed such as a semiconductor wafer is carried in and out of the vacuum processing chamber. It takes a lot of time to depressurize the chamber and start the process, which leads to deterioration of throughput. Therefore, in many cases, a pre-vacuum chamber having a small internal volume, a so-called load lock chamber, is provided adjacent to the vacuum processing chamber.
【0004】すなわち、図6に示すように、減圧雰囲気
下で処理を行う従来の半導体製造装置(例えばエッチン
グ装置等)では、真空処理室2に隣接して2 つのロード
ロック室3a、3bを設け、一方のロードロック室3a
を介して半導体ウエハ等の被処理物4を真空処理室2内
に搬送アーム5aにより搬入し、他方のロードロック室
3bを介して処理の終了した半導体ウエハ等の被処理物
4を搬送アーム5bにより搬出するようにする。このよ
うにして、真空処理室2内を常圧に戻すことなく半導体
ウエハ等の被処理物4を、真空処理室2内に搬入・搬出
するようにして、スループットの向上を図っている。That is, as shown in FIG. 6, in a conventional semiconductor manufacturing apparatus (for example, an etching apparatus) which performs processing under a reduced pressure atmosphere, two load lock chambers 3a and 3b are provided adjacent to the vacuum processing chamber 2. , One load lock chamber 3a
The object 4 to be processed such as a semiconductor wafer is carried into the vacuum processing chamber 2 by the transfer arm 5a, and the processed object 4 such as a semiconductor wafer to be processed is transferred via the other load lock chamber 3b to the transfer arm 5b. So that they can be carried out. In this way, the workpiece 4 such as a semiconductor wafer is carried in and out of the vacuum processing chamber 2 without returning the inside of the vacuum processing chamber 2 to the normal pressure, and the throughput is improved.
【0005】なお、エッチング装置の場合、真空処理室
2内に、上部電極50と下部電極51が配置されてい
る。上部電極50には、多数のガス供給口52が設けら
れており、ここから下部電極51上に載置した半導体ウ
エハ等の被処理物4に所定のエッチングガスを供給す
る。一方、下部電極51には、半導体ウエハ等の被処理
物4を冷却するための冷媒循環機構53と、電極間に所
定の高周波電圧を印加するための高周波電源54、マッ
チング回路55が設けられている。また。真空処理室2
およびロードロック室3a、3bには、それぞれ図示し
ない真空ポンプに接続された排気配管56が接続されて
おり、これらの内部を真空排気可能に構成されている。In the case of the etching apparatus, the upper electrode 50 and the lower electrode 51 are arranged in the vacuum processing chamber 2. The upper electrode 50 is provided with a large number of gas supply ports 52, from which a predetermined etching gas is supplied to the processing object 4 such as a semiconductor wafer mounted on the lower electrode 51. On the other hand, the lower electrode 51 is provided with a coolant circulation mechanism 53 for cooling the workpiece 4 such as a semiconductor wafer, a high frequency power supply 54 for applying a predetermined high frequency voltage between the electrodes, and a matching circuit 55. There is. Also. Vacuum processing chamber 2
An exhaust pipe 56 connected to a vacuum pump (not shown) is connected to each of the load lock chambers 3a and 3b, and the inside of these pipes can be evacuated.
【0006】ところで、半導体デバイスの製造工程にお
いては、塵埃が微細な回路パターンの形成に悪影響を及
ぼす。このため、半導体製造装置は天井から床に向けて
清浄化空気の流れ(ダウンフロー)が形成されたクリー
ンルーム内に配置される。In the manufacturing process of semiconductor devices, dust adversely affects the formation of fine circuit patterns. Therefore, the semiconductor manufacturing apparatus is arranged in a clean room in which a flow (downflow) of purified air is formed from the ceiling toward the floor.
【0007】[0007]
【発明が解決しようとする課題】しかしながら、近年半
導体デバイスは、急速に高集積化および微細化される傾
向にある。このため半導体製造工程においては、工程数
の増加に伴って半導体製造装置数が増大し、これらの装
置を収容するクリーンルーム面積の増大により、設備コ
ストが増大し、製品コストの上昇を招くという問題が発
生している。However, in recent years, semiconductor devices tend to be highly integrated and miniaturized rapidly. Therefore, in the semiconductor manufacturing process, the number of semiconductor manufacturing devices increases as the number of processes increases, and the area of the clean room for accommodating these devices increases, resulting in an increase in equipment cost and an increase in product cost. It has occurred.
【0008】本発明は、かかる従来の事情に対処してな
されたもので、従来に較べて装置コストを低減すること
ができるとともに、設置スペースを削減することがで
き、設備コストの削減による製品コストの低減を図るこ
とのできる半導体製造装置を提供しようとするものであ
る。The present invention has been made in response to such a conventional situation, and it is possible to reduce the device cost as compared with the conventional one, reduce the installation space, and reduce the product cost by reducing the facility cost. The present invention is intended to provide a semiconductor manufacturing apparatus capable of reducing the above.
【0009】[0009]
【0010】[0010]
【課題を解決するための手段】すなわち、請求項1記載
の半導体製造装置は、減圧雰囲気下で1つずつ被処理物
に所定の処理を施す真空処理室と、前記真空処理室に隣
接して設けられ、内部に、前記被処理物を搬送するため
の1つの搬送アームと、2つの前記被処理物を支持する
ための支持機構とを備え、前記被処理物の搬入・搬出時
に、常圧及び所定の真空度とされる予備真空室とを具備
し、前記真空処理室において所定の処理が施された前記
被処理物を前記支持機構の一方で支持し、前記真空処理
室において所定の処理が施される前の前記被処理物を前
記支持機構の他方で支持するように構成し、前記真空処
理室と前記予備真空室との間で前記被処理物を搬出入可
能な状態において前記搬送アームは、所定の処理が施さ
れた前記被処理物を前記真空処理室内から前記支持機構
の一方に搬送し、所定の処理が施される前の前記被処理
物を前記支持機構の他方から前記真空処理室内に搬送す
る、よう構成されたことを特徴とする。請求項2記載の
半導体製造装置は、請求項1記載の半導体製造装置にお
いて、前記支持機構は、上下棚状に2つの前記被処理物
を支持可能、且つ、駆動機構によって上下動可能に構成
されていることを特徴とする。請求項3記載の半導体製
造装置は、請求項1記載の半導体製造装置において、前
記支持機構は、前記搬送アームの上方位置で2つの前記
被処理物を支持可能、且つ、駆動機構によって上下動可
能に構成されていることを特徴とする。That is, a semiconductor manufacturing apparatus according to a first aspect of the present invention is such that a vacuum processing chamber that performs a predetermined process on objects to be processed one by one under a reduced pressure atmosphere, and a vacuum processing chamber adjacent to the vacuum processing chamber. At the time of loading and unloading of the object to be processed , provided therein is one transfer arm for transferring the object to be processed and a support mechanism for supporting the two objects to be processed.
And a pre-vacuum chamber that has a normal pressure and a predetermined degree of vacuum, and supports the object to be processed, which has been subjected to a predetermined process in the vacuum processing chamber, by one of the supporting mechanisms. Is configured to be supported by the other one of the support mechanisms before the predetermined processing is performed, and the processing target can be carried in and out between the vacuum processing chamber and the preliminary vacuum chamber. In this state, the transfer arm transfers the object to be processed, which has been subjected to a predetermined processing, from the vacuum processing chamber to one of the support mechanisms, and the object to be processed before the predetermined processing is applied to the support mechanism. It is configured such that it is transported from the other side into the vacuum processing chamber. A semiconductor manufacturing apparatus according to a second aspect is the semiconductor manufacturing apparatus according to the first aspect, wherein the support mechanism is configured to support the two objects to be processed in upper and lower shelves and to be vertically movable by a drive mechanism. It is characterized by The semiconductor manufacturing apparatus according to claim 3 is the semiconductor manufacturing apparatus according to claim 1, wherein the support mechanism is capable of supporting the two objects to be processed at a position above the transfer arm, and is vertically movable by a drive mechanism. It is characterized in that it is configured.
【0011】[0011]
【作用】本発明の半導体製造装置では、予備真空室を1
つとすることによって、装置コストの低減および設置ス
ペースの削減を実現することができる。また、予備真空
室内に設けた被処理物を支持するための支持機構あるい
は2 つの被処理物を支持して搬送可能に構成された搬送
アームによって、2 つの被処理物を取扱うことができる
ため、効率的に搬入・搬出を実施することができ、搬入
用予備真空室と搬出用予備真空室の2 つの予備真空室を
備えた従来の半導体製造装置とほぼ同様なスループット
を確保することができる。In the semiconductor manufacturing apparatus of the present invention, the preliminary vacuum chamber is
As a result, it is possible to reduce the device cost and the installation space. In addition, since two supporting objects can be handled by the support mechanism provided in the preliminary vacuum chamber for supporting the processing object or the transfer arm configured to support and transfer the two processing objects, It is possible to carry out and carry out efficiently, and it is possible to secure almost the same throughput as that of a conventional semiconductor manufacturing apparatus equipped with two preliminary vacuum chambers, a preliminary vacuum chamber for carry-in and a preliminary vacuum chamber for carry-out.
【0012】したがって、従来に較べて装置コストを低
減することができるとともに、設置スペースを削減する
ことができ、設備コストの削減による製品コストの低減
を図ることができる。Therefore, the apparatus cost can be reduced as compared with the conventional case, the installation space can be reduced, and the product cost can be reduced by reducing the facility cost.
【0013】[0013]
【実施例】以下、本発明を半導体ウエハにエッチング処
理を施すエッチング装置に適用した実施例を図面を参照
して説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment in which the present invention is applied to an etching apparatus for etching a semiconductor wafer will be described below with reference to the drawings.
【0014】図1に示すように、エッチング装置1に
は、減圧雰囲気下で半導体ウエハにエッチング処理を施
す真空処理室2が設けられている。この真空処理室2の
側方に隣接して、予備真空室3が1 つのみ設けられてお
り、予備真空室3内には、半導体ウエハ4を搬送するた
めの搬送アーム5と、上下に棚状に2 枚の半導体ウエハ
4を支持可能に構成されたウエハ支持機構6が設けられ
ている。このウエハ支持機構6は、図示しない駆動機構
により、上下動可能に構成されている。As shown in FIG. 1, the etching apparatus 1 is provided with a vacuum processing chamber 2 for etching a semiconductor wafer under a reduced pressure atmosphere. Only one preliminary vacuum chamber 3 is provided adjacent to the side of the vacuum processing chamber 2, and in the preliminary vacuum chamber 3, a transfer arm 5 for transferring a semiconductor wafer 4 and a vertical rack are installed. A wafer support mechanism 6 configured to support two semiconductor wafers 4 is provided. The wafer support mechanism 6 is vertically movable by a drive mechanism (not shown).
【0015】また、予備真空室3には、ゲートバルブ7
aを備えた搬入・搬出用開口7が設けられており、この
搬入・搬出用開口7の外側には、カセット載置台8が設
けられている。このカセット載置台8は、複数枚(例え
ば25枚程度)の半導体ウエハ4を収容したウエハカセッ
ト9を1 台あるいは数台(図示のものでは2 台)載置で
きるよう構成されている。図示矢印の如く、このウエハ
カセット9は、ボールスクリュー12を駆動して上下動
させることができるとともに他のスクリュー12aによ
ってスライド台8aを介して左右動できるよう構成され
ている。Further, in the preliminary vacuum chamber 3, a gate valve 7 is provided.
A loading / unloading opening 7 having a is provided, and a cassette mounting table 8 is provided outside the loading / unloading opening 7. The cassette mounting table 8 is configured so that one or several (two in the illustrated example) wafer cassettes 9 accommodating a plurality of (for example, about 25) semiconductor wafers 4 can be mounted. As shown by the arrow in the figure, the wafer cassette 9 is configured to be able to drive the ball screw 12 to move up and down and to move left and right by the other screw 12a via the slide base 8a.
【0016】また、真空処理室2と予備真空室3との間
には、ゲートバルブ10aを備えた搬入・搬出用開口1
0が設けられている(図2参照)。なお、予備真空室3
には、排気管33と仕切り弁33aを介して真空ポンプ
35が接続され、予備真空室3の内部を所定の真空度に
排気可能に構成されている。また、予備真空室3内をパ
ージするためのN2ガス源34が、仕切り弁32aと供
給管32を介して予備真空室3に接続されている。真空
処理室2にも同様に真空源とN2ガス源が接続されてい
る。Further, between the vacuum processing chamber 2 and the preliminary vacuum chamber 3, a loading / unloading opening 1 equipped with a gate valve 10a is provided.
0 is provided (see FIG. 2). The preliminary vacuum chamber 3
A vacuum pump 35 is connected to the vacuum pump 35 via an exhaust pipe 33 and a partition valve 33a so that the inside of the preliminary vacuum chamber 3 can be exhausted to a predetermined vacuum degree. Further, an N 2 gas source 34 for purging the inside of the preliminary vacuum chamber 3 is connected to the preliminary vacuum chamber 3 via a partition valve 32 a and a supply pipe 32. A vacuum source and an N 2 gas source are similarly connected to the vacuum processing chamber 2.
【0017】次に、上記構成の本実施例のエッチング装
置1の動作を説明する。Next, the operation of the etching apparatus 1 of the present embodiment having the above structure will be described.
【0018】まず、カセット載置台8を上下動及び左右
動させてウエハカセット9を搬入・搬出用開口7に位置
させ、搬入・搬出用開口10を閉じた状態で、搬入・搬
出用開口7を開け、搬送アーム5をO点を中心に旋回さ
せて、カセット載置台8に設けたウエハカセット9か
ら、一枚ずつ半導体ウエハ4を取り出し、予備真空室3
内に搬入する。そして、搬送アーム5のアーム50を伸
ばして上下どちらか一方のウエハ支持機構6上に半導体
ウエハ4を位置させ、この状態でウエハ支持機構6を上
昇させることにより、半導体ウエハ4をウエハ支持機構
6に受け渡す。この際、アーム50の伸縮には2 〜3 秒
要する。また、この際、半導体ウエハ4が搬送アーム5
上で移動するとダストが生じるので、極力その移動を阻
止する。First, the cassette mounting table 8 is moved up and down and left and right to position the wafer cassette 9 in the loading / unloading opening 7, and the loading / unloading opening 7 is opened with the loading / unloading opening 10 closed. The transfer arm 5 is opened, the transfer arm 5 is rotated about the point O, and the semiconductor wafers 4 are taken out one by one from the wafer cassette 9 provided on the cassette mounting table 8.
Bring it in. Then, the arm 50 of the transfer arm 5 is extended to position the semiconductor wafer 4 on one of the upper and lower wafer support mechanisms 6, and in this state, the wafer support mechanism 6 is lifted to move the semiconductor wafer 4 to the wafer support mechanism 6. Hand over to. At this time, it takes 2-3 seconds for the arm 50 to expand and contract. At this time, the semiconductor wafer 4 is transferred to the transfer arm 5.
If you move it up, dust will be generated, so prevent it from moving as much as possible.
【0019】次に、予備真空室3の搬入・搬出用開口7
を閉じて予備真空室3内の排気を真空ポンプ35により
実施し、予備真空室3内が所定の真空度に到達した後、
N2ガスを導入してパージを行い、搬入・搬出用開口1
0を開ける。この際、予備真空室3の真空引きには通常
30〜40秒、また、N2によるパージには30〜40
秒要する。そして、搬送アーム5によって、真空処理室
2内の処理部に設けられた処理済みの半導体ウエハ4を
取り出し、上述したようにして予備真空室3内の空いて
いる方のウエハ支持機構6に受け渡す。Next, the loading / unloading opening 7 of the preliminary vacuum chamber 3
Is closed and the interior of the preliminary vacuum chamber 3 is evacuated by the vacuum pump 35, and after the interior of the preliminary vacuum chamber 3 reaches a predetermined degree of vacuum,
N 2 gas is introduced and purged, and loading / unloading opening 1
Open 0 At this time, it is usually 30 to 40 seconds for evacuation of the preliminary vacuum chamber 3, and 30 to 40 seconds for purging with N 2.
It takes seconds. Then, the processed semiconductor wafer 4 provided in the processing section in the vacuum processing chamber 2 is taken out by the transfer arm 5 and is received by the wafer support mechanism 6 in the free vacuum chamber 3 in the free vacuum chamber 3 as described above. hand over.
【0020】この後、搬送アーム5によって、ウエハ支
持機構6に支持された未処理の半導体ウエハ4を搬送
し、真空処理室2内の処理部にこの未処理の半導体ウエ
ハ4を配置する。Thereafter, the unprocessed semiconductor wafer 4 supported by the wafer support mechanism 6 is carried by the transfer arm 5, and the unprocessed semiconductor wafer 4 is placed in the processing section in the vacuum processing chamber 2.
【0021】しかる後、搬入・搬出用開口10を閉じ、
予備真空室3内を常圧に戻し、搬入・搬出用開口7を開
ける。そして、搬送アーム5によって、ウエハ支持機構
6に支持された処理済みの半導体ウエハ4を搬出し、カ
セット載置台8に設けたウエハカセット9内に戻す。こ
の時、真空処理室2内では、上述のようにして搬入した
半導体ウエハ4のエッチング処理を並行して行う。Then, the loading / unloading opening 10 is closed,
The inside of the preliminary vacuum chamber 3 is returned to normal pressure, and the loading / unloading opening 7 is opened. Then, the processed semiconductor wafer 4 supported by the wafer support mechanism 6 is unloaded by the transfer arm 5 and returned into the wafer cassette 9 provided on the cassette mounting table 8. At this time, in the vacuum processing chamber 2, the etching process of the semiconductor wafer 4 carried in as described above is performed in parallel.
【0022】そして、ウエハカセット9内に未処理の半
導体ウエハ4がある場合は、次の半導体ウエハ4を上述
したようにして真空処理室2内の処理部に配置し、エッ
チング処理を行う。Then, when there is an unprocessed semiconductor wafer 4 in the wafer cassette 9, the next semiconductor wafer 4 is placed in the processing section in the vacuum processing chamber 2 as described above, and the etching process is performed.
【0023】このように、本実施例のエッチング装置1
では、真空処理室2に対して、予備真空室3が1 つのみ
設けられているので、搬入用予備真空室と搬出用予備真
空室の2 つの予備真空室を備えた従来の装置に較べて装
置コストの低減および設置スペースの削減を行うことが
できる。Thus, the etching apparatus 1 of this embodiment
In contrast, since only one spare vacuum chamber 3 is provided for the vacuum processing chamber 2, compared to a conventional device equipped with two spare vacuum chambers, a carry-in spare vacuum chamber and a carry-out spare vacuum chamber. It is possible to reduce the device cost and the installation space.
【0024】また、予備真空室3内に設けられたウエハ
支持機構6に、一旦半導体ウエハ4を仮置きすることに
より、効率的に半導体ウエハ4の搬入・搬出を実施する
ことができ、搬入用予備真空室と搬出用予備真空室の2
つの予備真空室を備えた従来の装置とほぼ同様なスルー
プットを確保することができる。Further, by temporarily placing the semiconductor wafer 4 on the wafer support mechanism 6 provided in the preliminary vacuum chamber 3, the semiconductor wafer 4 can be efficiently loaded and unloaded, and the semiconductor wafer 4 can be loaded and unloaded. 2 of preliminary vacuum chamber and preliminary vacuum chamber for carry-out
It is possible to ensure almost the same throughput as the conventional device equipped with two preliminary vacuum chambers.
【0025】なお、例えば予備真空室3内にウエハ支持
機構6がない場合は、これに半導体ウエハ4を仮置きす
ることができないので、処理済みの半導体ウエハ4を搬
出してからでないと、次の半導体ウエハ4の搬入動作を
実施することができず、大幅なスループットの低下を招
くことになる。If, for example, the wafer supporting mechanism 6 is not provided in the preliminary vacuum chamber 3, the semiconductor wafer 4 cannot be temporarily placed on it. Therefore, the processed semiconductor wafer 4 must be carried out. Since the semiconductor wafer 4 cannot be carried in, the throughput is significantly reduced.
【0026】したがって、従来に較べて装置コストを低
減することができるとともに、設置スペースを削減する
ことができ、設備コストの削減による製品コストの低減
を図ることができる。Therefore, the apparatus cost can be reduced as compared with the conventional case, the installation space can be reduced, and the product cost can be reduced by reducing the facility cost.
【0027】次に、図2および図3に、本発明の第2の
実施例の半導体製造装置を示す。この第2の実施例で
は、予備真空室3内には、天井部から吊り下げられる如
く、ウエハ支持機構6aが2 つ設けられている。これら
のウエハ支持機構6aは、天井部に設けた液圧シリンダ
等の往復動機構13により上下動可能に構成されてい
て、そのロッド13aはベロー14によって保護されて
いる。図中に矢印で示すように液圧シリンダ15のロッ
ド15aによって回動可能に構成された複数の爪20に
よって、半導体ウエハ4の周縁部を係止するよう構成さ
れている。そして、搬送アーム5によって半導体ウエハ
4を搬送し、ウエハ支持機構6aの下方に位置させる
と、ウエハ支持機構6aが、爪20の回動によって半導
体ウエハ4を係止し、この後僅かに上昇することによ
り、半導体ウエハ4を搬送アーム5から受け取る。一
方、爪20の逆の動作によって、その係止を解除してこ
の半導体ウエハ4を搬送アーム5に受け渡すよう構成さ
れている。Next, FIGS. 2 and 3 show a semiconductor manufacturing apparatus according to a second embodiment of the present invention. In the second embodiment, two wafer support mechanisms 6a are provided in the preliminary vacuum chamber 3 so as to be suspended from the ceiling. The wafer support mechanism 6a is configured to be vertically movable by a reciprocating mechanism 13 such as a hydraulic cylinder provided on the ceiling, and its rod 13a is protected by a bellows 14. As shown by the arrow in the figure, a plurality of claws 20 that are configured to be rotatable by a rod 15a of a hydraulic cylinder 15 are configured to lock the peripheral edge of the semiconductor wafer 4. Then, when the semiconductor wafer 4 is transferred by the transfer arm 5 and is positioned below the wafer supporting mechanism 6a, the wafer supporting mechanism 6a locks the semiconductor wafer 4 by the rotation of the claw 20, and then slightly moves up. As a result, the semiconductor wafer 4 is received from the transfer arm 5. On the other hand, the reverse operation of the claw 20 releases the locking and transfers the semiconductor wafer 4 to the transfer arm 5.
【0028】このように構成された予備真空室3を用い
れば、前述した実施例と同様な効果を得ることができる
とともに、予備真空室3をより小形化することができ、
例えばその内部の排気に要する時間の短縮等を図ること
ができる。By using the preliminary vacuum chamber 3 thus constructed, the same effects as those of the above-described embodiment can be obtained, and the preliminary vacuum chamber 3 can be made smaller.
For example, the time required for exhausting the inside can be shortened.
【0029】上述した各実施例では、予備真空室3内に
ウエハ支持機構6、6aを設けた例について説明した
が、例えば図4および図5に示すように、2 枚の半導体
ウエハ4を支持可能に構成された搬送アーム5aを用い
ることもできる。In each of the above-described embodiments, an example in which the wafer support mechanisms 6 and 6a are provided in the preliminary vacuum chamber 3 has been described. However, as shown in FIGS. 4 and 5, for example, two semiconductor wafers 4 are supported. It is also possible to use the transfer arm 5a configured as possible.
【0030】すなわち、この第3の実施例では、搬送ア
ーム5aは、軸30を中心として回動可能に構成され、
2 枚の半導体ウエハ4を支持可能に構成されたウエハ支
持部31を備えており、ウエハ支持部31を軸30を中
心に回転させることにより、例えば処理済みの半導体ウ
エハ4のアンロード動作と、未処理の半導体ウエハ4の
ロード動作とを続けて行うことができるよう構成されて
いる。このような搬送アーム5aを用いれば、前述した
実施例のようにウエハ支持機構6、6a等を使用せずに
スループットの低下を防止することができる。また、例
えば前述した搬送アーム5等を、例えば上下2 段に重ね
る如く予備真空室内に2 つ設け、2 枚の半導体ウエハ4
を支持できるようにしてもよい。That is, in the third embodiment, the transfer arm 5a is configured to be rotatable around the shaft 30.
A wafer supporting portion 31 configured to support two semiconductor wafers 4 is provided. By rotating the wafer supporting portion 31 about an axis 30, for example, an unloading operation of the processed semiconductor wafer 4 and The unprocessed semiconductor wafer 4 is continuously loaded and loaded. By using such a transfer arm 5a, it is possible to prevent a decrease in throughput without using the wafer supporting mechanisms 6 and 6a as in the above-described embodiment. In addition, for example, two transfer arms 5 and the like described above are provided in the preliminary vacuum chamber so as to be stacked in two stages, for example, two semiconductor wafers 4
May be supported.
【0031】なお、本発明は、エッチング装置に限ら
ず、真空雰囲気下で処理を行う枚葉式の半導体製造装置
であればあらゆる装置に適用することができる。The present invention is not limited to the etching apparatus, but can be applied to any apparatus as long as it is a single-wafer type semiconductor manufacturing apparatus that performs processing in a vacuum atmosphere.
【0032】[0032]
【発明の効果】以上説明したように、本発明の半導体製
造装置によれば、従来に較べて装置コストを低減するこ
とができるとともに、設置スペースを削減することがで
き、設備コストの削減による製品コストの低減を図るこ
とができる。As described above, according to the semiconductor manufacturing apparatus of the present invention, the apparatus cost can be reduced and the installation space can be reduced as compared with the prior art, and the product cost can be reduced. The cost can be reduced.
【図1】本発明の一実施例の半導体製造装置の構成を示
す図である。FIG. 1 is a diagram showing a configuration of a semiconductor manufacturing apparatus according to an embodiment of the present invention.
【図2】本発明の他の実施例の予備真空室の構成を示す
図である。FIG. 2 is a diagram showing a configuration of a preliminary vacuum chamber according to another embodiment of the present invention.
【図3】図2の予備真空室の横断面図である。3 is a cross-sectional view of the preliminary vacuum chamber of FIG.
【図4】本発明の他の実施例の搬送アームの構成を示す
図である。FIG. 4 is a diagram showing a configuration of a transfer arm according to another embodiment of the present invention.
【図5】図4の搬送アームの側面図である。5 is a side view of the transfer arm of FIG. 4. FIG.
【図6】従来の半導体製造装置の構成を示す図である。FIG. 6 is a diagram showing a configuration of a conventional semiconductor manufacturing apparatus.
1 エッチング装置 2 真空処理室 3 予備真空室 4 半導体ウエハ 5 搬送アーム 6 ウエハ支持機構 7 搬入・搬出用開口 8 カセット載置台 9 ウエハカセット 10 搬入・搬出用開口 1 Etching equipment 2 vacuum processing chamber 3 preliminary vacuum chamber 4 Semiconductor wafer 5 Transfer arm 6 Wafer support mechanism 7 Loading / unloading openings 8 cassette mounting table 9 Wafer cassette 10 Loading / unloading openings
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI H01L 21/3065 H01L 21/302 B (56)参考文献 特開 昭63−153270(JP,A) 特開 平2−140948(JP,A) 特開 昭62−216314(JP,A) 特開 昭63−27035(JP,A) 特開 平3−273606(JP,A) 特開 平4−87785(JP,A) (58)調査した分野(Int.Cl.7,DB名) H01L 21/68 ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 Identification code FI H01L 21/3065 H01L 21/302 B (56) References JP-A 63-153270 (JP, A) JP-A 2-140948 ( JP, A 62-216314 (JP, A) JP 63-27035 (JP, A) JP 3-273606 (JP, A) JP 4-87785 (JP, A) (58) ) Fields surveyed (Int.Cl. 7 , DB name) H01L 21/68
Claims (3)
の処理を施す真空処理室と、 前記真空処理室に隣接して設けられ、内部に、前記被処
理物を搬送するための1つの搬送アームと、2つの前記
被処理物を支持するための支持機構とを備え、前記被処
理物の搬入・搬出時に、常圧及び所定の真空度とされる
予備真空室とを具備し、 前記真空処理室において所定の処理が施された前記被処
理物を前記支持機構の一方で支持し、前記真空処理室に
おいて所定の処理が施される前の前記被処理物を前記支
持機構の他方で支持するように構成し、 前記真空処理室と前記予備真空室との間で前記被処理物
を搬出入可能な状態において前記搬送アームは、所定の
処理が施された前記被処理物を前記真空処理室内から前
記支持機構の一方に搬送し、所定の処理が施される前の
前記被処理物を前記支持機構の他方から前記真空処理室
内に搬送する、 よう構成されたことを特徴とする半導体製造装置。1. A vacuum processing chamber for performing a predetermined process on objects to be processed one by one under a reduced pressure atmosphere, and a vacuum processing chamber provided adjacent to the vacuum processing chamber, for transporting the objects to be processed therein. one of the transfer arms, two of said a supporting mechanism for supporting an object to be processed, the object to be punished
And a support mechanism for supporting the object to be processed which has been subjected to a predetermined process in the vacuum processing chamber. Of the vacuum processing chamber before the predetermined processing is performed in the vacuum processing chamber is supported by the other of the support mechanism, between the vacuum processing chamber and the preliminary vacuum chamber In the state where the object to be processed can be carried in and out, the transfer arm transfers the object to be processed, which has been subjected to a predetermined process, from the vacuum processing chamber to one of the supporting mechanisms, and the predetermined process is performed. A semiconductor manufacturing apparatus configured to convey the previous object to be processed from the other side of the support mechanism into the vacuum processing chamber.
被処理物を支持可能、且つ、駆動機構によって上下動可
能に構成されていることを特徴とする請求項1記載の半
導体製造装置。2. The semiconductor manufacturing apparatus according to claim 1, wherein the support mechanism is configured to support the two objects to be processed in upper and lower shelves and to be vertically movable by a drive mechanism. .
位置で2つの前記被処理物を支持可能、且つ、駆動機構
によって上下動可能に構成されていることを特徴とする
請求項1記載の半導体製造装置。3. The support mechanism according to claim 1, wherein the support mechanism is capable of supporting the two objects to be processed at a position above the transfer arm, and is vertically movable by a drive mechanism. Semiconductor manufacturing equipment.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13652392A JP3429786B2 (en) | 1991-05-29 | 1992-05-28 | Semiconductor manufacturing equipment |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3-124261 | 1991-05-29 | ||
JP12426191 | 1991-05-29 | ||
JP13652392A JP3429786B2 (en) | 1991-05-29 | 1992-05-28 | Semiconductor manufacturing equipment |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003059774A Division JP2003303818A (en) | 1991-05-29 | 2003-03-06 | Semiconductor manufacturing apparatus |
JP2003059773A Division JP2003309113A (en) | 1991-05-29 | 2003-03-06 | Semiconductor manufacturing apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH05198660A JPH05198660A (en) | 1993-08-06 |
JP3429786B2 true JP3429786B2 (en) | 2003-07-22 |
Family
ID=26460965
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13652392A Expired - Fee Related JP3429786B2 (en) | 1991-05-29 | 1992-05-28 | Semiconductor manufacturing equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3429786B2 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4312965B2 (en) * | 1999-01-12 | 2009-08-12 | 東京エレクトロン株式会社 | Vacuum processing equipment |
JP4607301B2 (en) * | 1999-09-06 | 2011-01-05 | 東京エレクトロン株式会社 | Semiconductor processing apparatus and semiconductor processing system |
US6918731B2 (en) | 2001-07-02 | 2005-07-19 | Brooks Automation, Incorporated | Fast swap dual substrate transport for load lock |
JP4908771B2 (en) * | 2005-04-27 | 2012-04-04 | 東京エレクトロン株式会社 | Processing device system |
KR20150038360A (en) * | 2007-05-18 | 2015-04-08 | 브룩스 오토메이션 인코퍼레이티드 | Compact substrate transport system with fast swap robot |
JP2014150109A (en) * | 2013-01-31 | 2014-08-21 | Disco Abrasive Syst Ltd | Decompression processing apparatus |
CA3117253A1 (en) | 2018-10-23 | 2020-04-30 | Asml Netherlands B.V. | Inspection apparatus |
-
1992
- 1992-05-28 JP JP13652392A patent/JP3429786B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH05198660A (en) | 1993-08-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR0162102B1 (en) | Semiconductor manufacturing apparatus | |
KR100230697B1 (en) | Reduced-pressure processing | |
USRE43023E1 (en) | Dual loading port semiconductor processing equipment | |
JP4916140B2 (en) | Vacuum processing system | |
JP4816545B2 (en) | Substrate processing apparatus, substrate processing method, and storage medium | |
JP3030160B2 (en) | Vacuum processing equipment | |
JP3486462B2 (en) | Decompression / normal pressure processing equipment | |
KR101106803B1 (en) | Atmospheric robot handling equipment | |
JP3429786B2 (en) | Semiconductor manufacturing equipment | |
US5759334A (en) | Plasma processing apparatus | |
US6595370B2 (en) | Apparatus and method for reducing contamination in a wafer transfer chamber | |
KR100961583B1 (en) | Vertical heat treatment device and method of operating the same | |
JP2873761B2 (en) | Semiconductor manufacturing equipment | |
JP2003309113A (en) | Semiconductor manufacturing apparatus | |
KR100566697B1 (en) | Multi-chamber system for fabricating semiconductor devices and method of fabricating semiconductor devices using thereof | |
JP3121022B2 (en) | Decompression processing equipment | |
JPH08181183A (en) | Carrying equipment of specimen | |
JPH04271139A (en) | Semiconductor manufacturing equipment | |
JP2003303818A (en) | Semiconductor manufacturing apparatus | |
JP2939378B2 (en) | Vacuum processing equipment | |
JP2948290B2 (en) | Substrate processing equipment | |
JPH05129240A (en) | Semiconductor manufacture system | |
JP2626782B2 (en) | Vacuum processing equipment | |
JPH08115968A (en) | Multistage multi-chamber vacuum heat treatment system | |
JP3228508B2 (en) | Vertical heat treatment equipment |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20001017 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120516 Year of fee payment: 9 |
|
LAPS | Cancellation because of no payment of annual fees |