JP2004235673A - Balanced transmission circuit, and apparatus and method for plasma surface treatment composed of the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an apparatus and method of plasma surface treating, which is capable of suppressing plasma generation and abnormal discharge in other spaces than between a pair of electrodes, and also capable of processing a large area uniformly as ell as preventing the power loss by using a VHF band frequency for plasma generation and plasma surface treating. <P>SOLUTION: This apparatus and method of plasma surface treating is composed of a balanced transmission circuit, and in this balanced transmission circuit, respective outer conductors of two coaxial cables are shorted with each other at least at both ends, and then the core wires of the two coaxial cables are used as an input portion at one end, and at the other end, are used as an output portion. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

  The present invention relates to a surface treatment apparatus and a surface treatment method for performing a predetermined treatment on the surface of a substrate using plasma. In particular, the present invention provides a surface treatment apparatus using an ultra-high-frequency plasma having a characteristic that an electron temperature is low and high-density plasma can be generated, that is, a plasma generated by high-frequency power in a VHF band (30 MHz to 300 MHz). It relates to a surface treatment method.

  Manufacturing various electronic devices by performing various processes on the surface of a substrate using plasma includes LSI (Large Scale Integrated Circuit), TFT (Thin Film Transistor) for LCD (Liquid Crystal Display), amorphous Si solar cell, thin film It has already been put to practical use in the fields of polycrystalline Si-based solar cells, photoconductors for copying machines, and various information recording devices. Practical application is also progressing in the field of manufacturing ultra-hard films such as diamond thin films and cubic boron nitride (C-BN).

The above technical fields cover a wide variety of fields, such as thin film formation, etching, surface modification, and coating. The apparatus and the method relating to the generation of the reactive plasma are roughly classified into two typical techniques.

The first representative technique is described in, for example, Patent Documents 1 and 2, and is characterized in that two parallel plate electrodes including a non-ground electrode and a ground electrode are used as a pair for plasma generation. A second representative technique is described in, for example, Patent Documents 3 and 4, and is characterized in that a ladder electrode and a plate electrode are used as a pair for plasma generation.

As a high-frequency power supply technique, Patent Literature 5 discloses a technique using a balanced-unbalanced conversion circuit that supplies power having a phase difference of 180 degrees to a flat electrode. Patent Document 6 describes a balun converter for preventing power loss between an antenna and a coaxial cable in the field of wireless engineering.

The features of the technology described in the above document are roughly as follows. In the technique of Patent Document 1, the ungrounded electrode is formed such that the distance between the longest two points of any two points on the periphery of the surface facing the space where plasma is generated is a quarter of the wavelength of the high-frequency power. And a plurality of power supply points are set at equal positions. In the technique of Patent Document 2, the position of the power supply point of the non-grounded electrode is set to the side of the boundary between the first surface in contact with the space where the plasma is generated and the second surface behind the first surface. It is characterized by being located. The technique of Patent Document 3 is characterized in that the shape of the ungrounded electrode is a ladder type (ladder type). The technique disclosed in Patent Document 4 changes the phase difference between the voltage of the power supplied to one power supply point on the electrode and the voltage of the power supplied to at least one other power supply point over time, thereby forming a pair. This is characterized in that the electric field distribution between the electrodes is averaged, and as a result, the spatial distribution of plasma intensity is made uniform. Patent Document 5 is characterized in that the phases of two outputs of a balun converter are made different by 180 degrees, and power is supplied to electrodes via an impedance matching device. The technique of Patent Document 6 relates to a means for preventing a leakage current generated at a connection portion between an antenna and an end of a coaxial cable used in the field of wireless engineering, and relates to a balanced type such as a super-top type, a half-wavelength detour path type, and an LC bridge type. It is characterized by using an unbalanced conversion device.

JP-A-8-325759 (page 3-9, FIG. 1-4) JP-A-2002-12977 (page 5-13, FIG. 1-6) JP-A-4-237781 (pages 2-4, Fig. 1-4) JP 2001-257098 A (page 3-8, FIG. 1-3) Japanese Utility Model Application No. 1-88379 (Fig. 1) JP-A-2001-53518 (FIGS. 38, 39, and 43)

The above-mentioned plasma surface treatment technology, that is, the plasma surface treatment apparatus and the plasma surface treatment method are used in any of the industrial fields such as LCDs, LSIs, electronic copiers and solar cells to reduce the product cost and increase the large area due to the improvement in productivity. The need for a large area, uniformity, and high-speed processing for improving performance (specifications) such as a wall-mounted TV is increasing year by year.

Recently, in order to meet the above needs, one technology trend is that not only industry but also academic societies can generate high-density plasma at low electron temperature in both plasma CVD (chemical vapor deposition) technology and plasma etching technology. Advanced research and development on large-area and high-speed film formation of plasma CVD and large-area and high-speed plasma etching using a VHF band (30 MHz to 300 MHz) power supply having such characteristics has been actively conducted. However, the related art still has the following problems.

(1) The first problem is to speed up the surface treatment (improve productivity). Generally, it is effective to increase the power supply frequency of plasma generation up to a VHF band of 30 MHz to 300 MHz in order to increase the speed of the plasma surface treatment technology on the premise of ensuring product quality. Has become. However, when the power supply frequency is increased to the VHF band, a problem occurs that the film thickness distribution is significantly deteriorated.

The following can be considered as the reason. As pointed out in Patent Documents 1, 2, and 4, when the high frequency of the power supply is in the VHF band, the wavelength of the radio wave and the length of the propagation path of the power supply system and the electrodes become substantially equal, and the wave interference phenomenon ( It is considered that the spatial uniformity of the plasma density cannot be ensured because the traveling wave and the reflected wave interfere with each other. Another reason is considered to be that the impedance is increased in the power transmission path due to the skin effect, which is a phenomenon peculiar to VHF, and the non-uniformity thereof.

In addition to the points pointed out in Patent Documents 1, 2, and 4, the following are essential causes of the difficulty of high-speed processing on the premise that the conventional VHF plasma is made large and uniform. It is considered that a structural problem of the power supply system is involved.

In the related art, a connection portion between a coaxial cable and an electrode, which is a component of an output circuit of a power supply system, has a configuration in which lines having different structures are connected to each other. That is, in the prior art, as shown in FIGS. 15 to 17, a typical example of the conventional technique is that the leakage current caused by the difference in the transmission characteristics between the coaxial cable and the electrode as the load is coaxial at the connection between the electrode and the coaxial cable. It occurs on the end face of the outer conductor of the cable. That is, the coaxial cable is an unbalanced transmission line, but the load electrode has characteristics equivalent to two parallel lines (balanced type). As a result, a leakage current is generated at the connection portion as shown in FIGS. 15 to 17, respectively. This leakage current causes abnormal discharge in unnecessary places other than plasma generated between a pair of target electrodes, causing not only a problem of power loss, but also prevents uniformity of substrate surface treatment by plasma. It is a factor and a problem. The phenomenon related to the leakage current becomes more remarkable as compared with RF (13.56 MHz) when the power supply frequency is in the VHF band.

According to the knowledge of wireless engineering, if the balun is inserted between the end of the coaxial cable and the electrode shown in FIGS. It is possible to suppress the current. However, in the field of plasma surface treatment apparatuses, it is difficult to apply them for the following reasons, and no successful examples have been found so far.

For example, when a super-top type balanced-unbalanced conversion device shown in FIG. 18 and a half-wavelength detour channel type shown in FIG. 19 used in the field of wireless engineering is applied to a plasma surface treatment apparatus, it is difficult to refuse to put it to practical use. There are three problems: The first problem is that the frequency of the electric power used in the high-frequency plasma surface treatment apparatus is 13.56 MHz and a range of 30 MHz to 100 MHz, and therefore, at a half wavelength, 11 m (13.56 MHz) and 5 m (30 MHz) to 1. Since the wavelengths are 5 m (100 MHz), a quarter wavelength, 5.5 m (13.56 MHz) and 2.5 m (30 MHz) to 0.75 m (100 MHz), which are extremely long wavelengths, these balanced-unbalanced converters are required. Installation in a vacuum vessel is extremely difficult. If these balance-unbalance converters are forcibly installed in a vacuum vessel, there arises a problem that the size of the vacuum vessel becomes so large that practicality is ignored. The second problem is that the coaxial cable installed inside the vacuum vessel used for the plasma surface treatment apparatus is made of high-purity ceramic as a dielectric material of its constituent members to prevent the generation of impurities in a vacuum field. Since it is used, it has a characteristic that it is difficult to bend. For this reason, the means of reducing the installation location by bending a long object does not work. A third problem is that when a half-wavelength detour-type balanced-unbalanced converter is applied to a plasma surface treatment apparatus, a strong abnormal discharge occurs as shown in FIG. Absent. When an LC bridge type equilibrium-unbalance converter is applied to a plasma surface treatment apparatus, as shown in FIG. 17, a strong abnormal discharge occurs between a pair of electrodes. It requires measures such as filling, and is not practical for application to a surface treatment apparatus for large-area substrates.

Therefore, in the application field of the conventional plasma surface treatment apparatus, it is possible in principle to apply a balanced-unbalanced conversion apparatus such as a super-top type, a half-wavelength detour path type and an LC bridge type to the plasma surface treatment apparatus. However, the technology that makes the application feasible has not been developed yet.

(2) The second problem is to make the plasma surface treatment large and uniform (improving productivity and performance). Generally, in the LCD field, the film thickness distribution ensures reproducibility, about ± 5%, and in the solar cell field, the film thickness distribution ensures reproducibility, and about ± 10% is one index for practical use. Has become. However, in the case where an a-Si film is manufactured by the conventional VHF plasma technology, for example, assuming that reproducibility is ensured, if the substrate area is about 50 cm × 50 cm, the film thickness distribution is about ± 10 to 15%, and the film area is about 100 cm × 100 cm. , The film thickness distribution is about ± 15 to 20%.

The direct cause of the non-uniformity of the film thickness distribution is the non-uniformity of the plasma density, and the non-uniformity of the plasma density is related to the wave interference phenomenon and the skin effect, which are inherent problems of the VHF. In addition to matters related to matters such as leakage current and the like, the influence on plasma generation of a substrate (glass having a thickness of 4 to 6 mm in the case of a solar cell) provided between a pair of electrodes is considered. That is, since the substrate is generally a dielectric and deformed by the temperature of the substrate, the plasma generated between the pair of electrodes is affected by the substrate. In particular, when the pressure condition at the time of plasma generation is several hundred Pa to several thousand Pa (several Torr to several tens Torr), the distance between the pair of electrodes becomes narrow, 10 to 15 mm, so that the effect of the substrate cannot be ignored. .

(3) Further, as a third problem, there is a problem of power loss due to plasma generated except between a pair of electrodes. As described above, in the related art, unnecessary plasma is generated in addition to between a target pair of electrodes, and cannot be controlled or suppressed, so that unnecessary power is consumed. I have. This power loss is not only a waste of power but also causes a component of the plasma processing apparatus to be overheated and damaged. That is, it is a factor that impairs the stable operation of the plasma processing apparatus.

As described above, in the related art, it is still difficult to apply VHF plasma CVD and plasma etching to a large-area substrate required for mass productivity improvement and cost reduction, for example, a large-area substrate of 1 mx 1 m class. It is considered impossible. In other words, VHF plasma technology has been attracting attention as one of the technical trends in order to respond to issues such as large area, uniformity, high speed, and prevention of power loss, and research and development on its practical application has been carried out. Due to the difficulty, no successful example of a high film-forming speed and uniform surface treatment method using VHF plasma for a 1mx1m class large-area substrate and using no VHF plasma and a device therefor has not been published yet.

In other words, at present, the specific technical issues facing the VHF plasma field are, first, creation of a technique for generating plasma only between a pair of electrodes (if this is possible, prevention of power loss is solved. Second, the creation of a technology that is not affected by the installation of the substrate (if this is possible, even if the pressure conditions are several hundred Pa to several thousand Pa and the electrode spacing is equivalent to the substrate thickness, plasma can be obtained). The third is the creation of high-speed, large-area, and uniform technology.

Therefore, the present invention has been made to solve the above-mentioned problem, and realizes a form of a balanced transmission line used in wireless engineering using a coaxial cable which is an unbalanced transmission line. For example, a plasma is generated only between a pair of electrodes by using a frequency in a VHF band (30 MHz to 300 MHz) even for a large area substrate of, for example, 1 mx 1 m class, and is excellent in high speed and uniformity. It is an object of the present invention to provide a plasma surface treatment apparatus and a plasma surface treatment method.

In order to achieve the above object, the invention according to claim 1 of the present application provides a vacuum vessel provided with an exhaust system, a discharge gas supply system for supplying a discharge gas into the vacuum vessel, and an electrode for plasma generation. And a power supply system including a high-frequency power supply, an impedance matching device, and a balance-unbalance converter, and substrate holding means for arranging a substrate to be subjected to plasma processing, and processing the surface of the substrate using generated plasma. A balanced transmission circuit used in a plasma surface treatment apparatus, wherein outer conductors of two coaxial cables having substantially equal lengths are short-circuited at least at both ends thereof, and one end of the two coaxial cables is connected. The configuration is such that each core of the section is an input section, and each core of the other end is an output section.

Similarly, in order to achieve the above object, the invention according to claim 2 of the present application provides a vacuum vessel provided with an exhaust system, a discharge gas supply system for supplying a discharge gas into the vacuum vessel, Electrodes, a power supply system comprising a high-frequency power supply, an impedance matching device, and a balance-unbalance conversion device, and a substrate holding means for arranging a substrate to be subjected to plasma processing. A balanced transmission circuit for use in a plasma surface treatment apparatus for processing, wherein two outer conductors of a coaxial cable having substantially equal lengths are short-circuited at least at both ends by other conductors, and The coaxial cable is characterized in that each core wire at one end is used as an input unit and each core wire at the other end is used as an output unit.

Similarly, in order to achieve the above object, the invention according to claim 3 of the present application provides a vacuum vessel provided with an exhaust system, a discharge gas supply system for supplying a discharge gas into the vacuum vessel, Electrodes, a power supply system comprising a high-frequency power supply, an impedance matching device, and a balance-unbalance conversion device, and a substrate holding means for arranging a substrate to be subjected to plasma processing. A balanced transmission method for use in a plasma surface treatment apparatus for processing, wherein a balanced transmission circuit having a configuration according to claim 1 or 2 is used to output electric power from an output circuit of the balanced / unbalanced converter to the electrode. The output of the balun converter is transmitted to a supply point.

Similarly, in order to achieve the above object, the invention according to claim 4 of the present application provides a vacuum vessel provided with an exhaust system, a discharge gas supply system for supplying a discharge gas into the vacuum vessel, and a plasma generation system. A pair of electrodes including a first electrode and a second electrode, a power supply system including a high-frequency power supply, an impedance matching device, and a balance-unbalance converter, and substrate holding means for arranging a substrate to be subjected to plasma processing. In a plasma surface treatment apparatus that treats a surface of a substrate by using generated plasma, a plurality of openings are provided in the pair of electrodes, and a power supply point is arranged on each periphery of the pair of electrodes, and Item 3: An output circuit of a balance-unbalance conversion device of the power supply system component and a power supply point of the pair of electrodes are connected using a balanced transmission circuit having the configuration described in Item 1 or 2. And it features.

Similarly, in order to achieve the above object, the invention according to claim 5 of the present application provides a vacuum vessel having an exhaust system, a discharge gas supply system for supplying a discharge gas into the vacuum vessel, and a plasma generation system. A pair of electrodes including a first electrode and a second electrode, a power supply system including a high-frequency power supply, an impedance matching device, and a balance-unbalance converter, and substrate holding means for arranging a substrate to be subjected to plasma processing. In a plasma surface treatment apparatus that treats the surface of a substrate by using generated plasma, the substrate is disposed outside the pair of electrodes, and a plurality of openings are provided in the first and second electrodes, respectively. In addition, a plurality of through holes are provided at equal intervals in the first electrode, a power supply point of the first electrode is provided near each of the plurality of through holes, and a power supply point of the second electrode is provided. A point close to the respective through-hole And an output circuit of a balanced-unbalanced conversion device of the power supply system component through each through-hole, using a balanced transmission circuit having the configuration according to claim 1 or 2. It is characterized in that it has a configuration in which the power supply points of the first and second electrodes are connected.

The opening is a hole for passing or diffusing gas, plasma, or a radial species, and the through hole is a hole for passing a coaxial cable.

Similarly, in order to achieve the above object, an invention according to claim 6 of the present application provides a vacuum vessel provided with an exhaust system, a discharge gas supply system for supplying a discharge gas into the vacuum vessel, and a plasma generation system. A pair of electrodes including a first electrode and a second electrode, a power supply point of the pair of electrodes, a power supply system including a high-frequency power supply, an impedance matching device, and a balance-unbalance converter, and a substrate to be subjected to plasma processing. A plasma surface treatment apparatus comprising: a substrate holding means to be disposed; and a balanced transmission circuit having a configuration according to claim 1, wherein a surface of the substrate is treated using generated plasma. The power supply circuit that supplies power to the pair of electrodes includes a high-frequency power supply, an impedance matching device, a balanced-unbalanced conversion device, a balanced transmission circuit, And characterized in that arranged in the order of the power supply point.

Similarly, in order to achieve the above object, the invention according to claim 7 of the present application provides a vacuum vessel having an exhaust system, a discharge gas supply system for supplying a discharge gas into the vacuum vessel, and a plasma generation system. A pair of electrodes including a first electrode and a second electrode, a power supply point of the pair of electrodes, a power supply system including a high-frequency power supply, an impedance matching device, and a balance-unbalance converter, and a substrate to be subjected to plasma processing. A plasma surface treatment method comprising: a substrate holding means to be arranged; and a balanced transmission circuit having a configuration according to claim 1 or 2, wherein the surface of the substrate is treated using generated plasma. A power supply circuit device for supplying power to a pair of electrodes is arranged along a high-frequency power supply, an impedance matching device, a balanced-unbalanced conversion device, a balanced transmission circuit, and a power supply from an upstream side to a downstream side of a power flow. And performing the plasma surface treatment by the configuration that is arranged in the order of supply point.

Similarly, in order to achieve the above object, an invention according to claim 8 of the present application provides a vacuum vessel provided with an exhaust system, a discharge gas supply system for supplying a discharge gas into the vacuum vessel, and a plasma generation system. A pair of electrodes including a first electrode and a second electrode, a power supply system including a high-frequency power supply, an impedance matching device, and a balance-unbalance converter, and substrate holding means for arranging a substrate to be subjected to plasma processing. In a plasma surface treatment method for treating a surface of a substrate by using generated plasma, a balanced transmission circuit having the configuration according to claim 1 or 2 is used to connect an electrode from an output circuit of the balanced-unbalanced converter to the electrode. The output of the equilibrium-unbalance converter is transmitted to a power supply point of the installation, and plasma surface treatment is performed.

According to the balanced transmission circuit of claim 1 or 2, unlike the conventional balanced transmission circuit, it is possible to transmit power in a balanced manner by confining the electromagnetic field inside the coaxial cable without emitting the electromagnetic field to the outside. It is. This makes it possible to apply the balanced transmission circuit, which has been considered difficult in the past, to the field of plasma surface treatment, and to supply electric power having a phase difference of 180 degrees between voltages to a pair of electrodes. That is, when using a balanced transmission circuit, when a power having a voltage phase difference of 180 degrees is applied to a pair of electrodes, the voltages of the electrodes alternately become positive and negative, and are grounded (such as the inner wall of a vacuum vessel and a metal member). Since the potential difference is twice as large as the potential difference, application to generation of plasma only between the pair of electrodes is possible. As a result, it is possible to suppress the leakage current, abnormal discharge, and the like in the power supply unit, which are problems in the related art, and it is possible to effectively solve the problems of power loss, uniform plasma, and large area. This effect has a remarkable contribution not only to the industries of photoconductors for LSIs, LCDs and copiers but also to the improvement of productivity and the reduction of product costs in the solar cell industry.

However, in the balanced transmission circuit according to claim 2, the outer conductors of the two coaxial cables are short-circuited by the other conductors at least at both ends thereof, and the outer conductor of one end of the two coaxial cables is connected. Since each core wire is used as an input unit and each core wire at the other end is used as an output unit, compared to the balanced transmission circuit having the configuration according to claim 1, the wiring configuration of the coaxial cable is designed and designed. There is a merit that flexibility is effective when wiring the coaxial cable.

According to the balanced transmission method of the third aspect, the balanced transmission method using the balanced transmission circuit having the configuration according to the first or second aspect can be applied to the field of plasma surface treatment, and it is difficult to view the conventional technique. It can be applied to generating plasma only between a pair of electrodes. As a result, power loss is prevented and leakage current is suppressed, so that the practical value is extremely large. This effect has a remarkable contribution not only to the industries of photoconductors for LSIs, LCDs and copiers but also to the improvement of productivity and the reduction of product costs in the solar cell industry.

According to the plasma surface treatment apparatus of the fourth aspect, using the balanced transmission circuit having the configuration according to the first or second aspect, a pair of the output circuit of the balanced-unbalanced converter, which is a member constituting the plasma surface treatment apparatus, is used. By transmitting the output of the equilibrium-unbalance converter to a power supply point installed at the electrode, plasma surface treatment can be performed. This makes it possible to apply the balanced transmission circuit, which has been considered difficult in the past, to the field of plasma surface treatment, and supplies power of a frequency in a VHF region having a phase difference of 180 degrees to the pair of electrodes. It is possible. That is, using the balanced transmission circuit, it is possible to apply electric power having a phase difference of 180 degrees to the pair of electrodes, the voltage of the electrodes alternately becomes positive and negative, and the ground (the inner wall of the vacuum vessel and the metal member). ) Is twice as large as the potential difference between the pair of electrodes, so that plasma can be generated only between the pair of electrodes. As a result, a plasma surface treatment apparatus free from problems such as leakage current and abnormal discharge in the power supply unit, which is a problem in the related art, and having no problems such as power loss, uniform plasma, and large area can be put to practical use. It is possible. This effect contributes significantly to the improvement of productivity and the reduction of product cost not only in the industries of photoconductors for LSIs, LCDs and copiers, but also in the solar cell industry.

According to the plasma surface treatment apparatus of claim 5, since the substrate can be installed outside the pair of electrodes, and the pair of electrodes can be supplied with electric power having a voltage phase difference of 180 degrees, the pair of electrodes can be supplied. It is possible to generate plasma only between the electrodes. Further, since the substrate is provided outside the pair of electrodes, it is possible to generate plasma without being affected by the substrate, and the pressure becomes indispensable under high conditions of several hundred Pa to several thousand Pa. Plasma processing can be performed at the electrode interval. Further, since power can be supplied to the plurality of power supply points of the pair of electrodes through the plurality of through holes, it is possible to easily cope with the generation of large-area plasma. That is, it is possible to easily cope with the problem by increasing the number of through holes installed at equal intervals. In addition, it is possible to put into practical use a plasma surface treatment apparatus free from power loss, which does not cause leakage current or abnormal discharge in the power supply unit, which is a problem in the conventional technology. This effect has a remarkable contribution not only to the industries of photoconductors for LSIs, LCDs and copiers but also to the improvement of productivity and the reduction of product costs in the solar cell industry.

According to the plasma surface treatment apparatus and the plasma surface treatment method of claims 6 and 7, the phase relation of the output of the balance-unbalance conversion device of the power supply system member is reliably maintained, and the phase difference of the voltage is reduced. A means and a method for surely supplying electric power differing by 180 degrees to the pair of electrodes are applicable, and the practical value thereof is extremely high. This effect contributes significantly to the improvement of productivity not only in the industries of photoconductors for LSIs, LCDs and copiers, but also in the solar cell industry.

According to the plasma surface treatment method of the eighth aspect, it is possible to generate high-density plasma using a power supply in a VHF band (30 MHz to 300 MHz), which has been regarded as difficult in the past, only between a pair of electrodes. As a result, loss of electric power can be prevented, and a large-area and uniform plasma surface treatment, that is, an improvement in a film forming speed and an etching speed can be performed with good reproducibility. This effect contributes significantly to the improvement of productivity not only in the industries of photoconductors for LSIs, LCDs and copiers, but also in the solar cell industry.

Hereinafter, a balanced transmission circuit according to an embodiment of the present invention, a plasma surface treatment apparatus configured with the balanced transmission circuit, and a plasma surface treatment method will be described with reference to the drawings. In the following description, as an example of a plasma surface treatment apparatus and a plasma surface treatment method, an apparatus and a method for producing an a-Si thin film necessary for producing a solar cell are described. Is not limited to the apparatus and method of the following example.

(Example 1)
First Embodiment A balanced transmission circuit according to a first embodiment of the present invention, a plasma surface treatment apparatus (plasma CVD apparatus) and a plasma surface treatment method (plasma CVD method) configured by the balanced transmission circuit will be described with reference to FIGS. I do.

FIG. 1 is a schematic view showing the entire plasma surface treatment apparatus according to the first embodiment, FIG. 2 is an explanatory view of the inside of a vacuum vessel of the plasma surface treatment apparatus shown in FIG. 1, and FIG. 3 is a balance using a coaxial cable according to the present invention. FIG. 3 is an explanatory diagram illustrating a transmission circuit.

First, the configuration of the device will be described. 1 and 2, reference numeral 1 denotes a vacuum vessel. The vacuum vessel 1 is provided with a pair of electrodes for converting a discharge gas, which will be described later, into plasma, that is, a first non-grounded electrode 2 and a second non-grounded electrode 4 including a substrate heater 3 (not shown). The first and second non-grounded electrodes 2 and 4 are fixed to the vacuum vessel 1 via insulator supports 5a and 5b and 24a and 24b, respectively. A large number of openings 6 having a diameter of about 2 mm to 10 mm are arranged in the first non-ground electrode 2 at an aperture ratio of 40% to 80%. An earth shield 7 is arranged around the first non-ground electrode 2. The earth shield 7 suppresses discharge in unnecessary portions, and arranges a discharge gas such as SiH 4 supplied from discharge gas supply pipes 8 a and 8 b in the rectifying hole 9 and the non-ground electrode 2. It has a function of uniformly supplying between the pair of electrodes 2 and 4 through a number of openings 6. The earth shield 7 is used in combination with the exhaust pipe 10 and a vacuum pump 11 (not shown), and thus has a function of discharging used discharge gas that has been turned into plasma in the plasma generation space.

The pressure in the vacuum vessel 1 is monitored by a pressure gauge (not shown), and is automatically adjusted and set to a predetermined value by a pressure adjusting valve (not shown). In the case of this embodiment, when the flow rate of the discharge gas is about 500 sccm to 1,500 sccm, the pressure can be adjusted to about 0.01 Torr to 10 Torr (1.33 Pa to 1,330 Pa). The ultimate pressure of the vacuum in the vacuum vessel 1 is about 2 to 3E-7 Torr (2.66 to 3.99E-5 Pa).

Reference numeral 12 denotes a substrate, which is provided on the second non-grounded electrode 4 by opening and closing a gate valve 13 (not shown). Then, the substrate is heated to a predetermined temperature by a substrate heater 3 (not shown).

Reference numeral 14 denotes a high-frequency power supply, which generates power of a frequency of 30 MHz to 300 MHz (VHF band), for example, power of 60 MHz. The power is supplied to a first coaxial cable 15, an impedance matching unit 16, a second coaxial cable 17, an LC bridge type balance-unbalance converter 18, coaxial cables 19a and 19b, a vacuum connection terminal 20, a coaxial cable 21a, The power is supplied to the power supply points 23a and 23b of the pair of electrodes 2 and 4 via the balanced transmission line 21b and the first and second power supply lines 22a and 22b.

The balanced transmission circuit (here, the balanced transmission circuit and the balanced transmission line are used interchangeably) includes an LC bridge type balanced-unbalanced converter 18, coaxial cables 19a and 19b, a vacuum connection terminal 20, and coaxial cables 21a and 21b. Consists of In order to explain the concept of this circuit, the configuration of the circuit is shown in FIG.

In FIG. 3, a core wire and an outer conductor at one end of a coaxial cable used for transmitting power are connected to input terminals of an LC bridge type balance-unbalance converter. The core wire and the external conductor at the other end of the coaxial cable are connected to an impedance matching device. Then, respective core wires at one ends of two coaxial cables in a state where external conductors are fixed and short-circuited are connected to output terminals of the LC bridge type balanced-unbalanced converter, and the two coaxial cables are connected. Each core wire at the other end of the cable is connected to a pair of electrodes that are loads. With this configuration, as shown in FIG. 3, the power transmitted from the coaxial cable, which is an unbalanced transmission line, is balanced by an LC bridge type balanced-unbalanced converter and two coaxial cables in which the outer conductors are short-circuited. It can be transmitted to a pair of electrodes via a circuit. Here, the high-frequency current flowing inside the outer conductors of the two coaxial cables in which the outer conductors are short-circuited is, as shown in FIG. 3, the outer conductors form a closed loop circuit. There is no leakage of current to the (output terminal side of the LC bridge type balance-unbalance converter) and the downstream side (pair of electrodes). The currents output from the output terminals of the LC bridge type balance-unbalance converter have the same amplitude and opposite phases. That is, the two coaxial cables in which the outer conductors are short-circuited have a function of confining the electric and magnetic fields without radiating the electric and magnetic fields to the outside and as a balanced transmission circuit. As a result, the voltage applied between the pair of electrodes is alternately positive and negative, so that the voltage applied between the electrodes is twice as large as the potential difference between the ground (the wall of the vacuum vessel and a metal member). Therefore, it is possible to preferentially generate plasma only between the pair of electrodes.

In the above configuration, as means for short-circuiting the outer conductors of the two coaxial cables, it is not always necessary to connect the outer conductors over the entire length of the two coaxial cables. It is sufficient to short-circuit the outer conductors. The reason is that any means may be used as long as it can form a closed loop electric circuit as shown in FIG. 3 so that the current flowing inside the outer conductor of the two coaxial cables does not flow out.

Note that the conventional balanced transmission circuit uses two parallel lines called a Lechel line, but has no practical value and is not used for the following reasons. That is, a conventional balanced transmission line is an electric circuit having a configuration in which an output terminal of an LC bridge type balanced-unbalanced converter is connected to a load using two parallel lines as shown in FIG. In this case, the power from the coaxial cable, which is an unbalanced transmission line, can be transmitted to the load as a balanced transmission line via an LC bridge-type balanced-unbalanced converter, but a strong electric field is applied between the two parallel lines. Is generated, and a strong magnetic field is generated around the two lines and is radiated to the outside. Therefore, it is not practical and is not used in the field of plasma science and engineering.

Next, a method for forming a-Si for an a-Si solar cell using the plasma surface treatment apparatus having the above-described configuration will be described. 1 and 2, the substrate 12 is previously set on the second non-grounded electrode 4, the vacuum pump 11 is operated to remove the impurity gas and the like in the vacuum vessel 1, and then the discharge gas supply pipe 8a , 8b while supplying a SiH4 gas at, for example, 500 sccm and a pressure of 0.5 Torr (66.5 Pa), and supplying a high frequency power, for example, a power of a frequency of 60 MHz, for example, 500 W to the pair of electrodes 2, 4. The substrate temperature is kept in a range of 80 to 350 ° C., for example, 180 ° C.

That is, the output of the high-frequency power source 14 is, for example, 500 W at 60 MHz, and the output of the first coaxial cable 15, the impedance matching unit 16, the second coaxial cable 17, the LC bridge type balance-unbalance converter 18, and the external conductors are connected to each other. A power supply point is provided via the coaxial cables 19a and 19b which are fixed and short-circuited, the vacuum connection terminal 20 and the coaxial cables 21a and 21b where the external conductors are fixed and short-circuited and the first and second power supply lines 22a and 22b. 23a and 23b. In this case, by adjusting the LC of the impedance matching unit 16 and by using the power value monitor of the traveling wave and the reflected wave attached to the high frequency power supply 14 in combination, the upstream side of the impedance matching unit 16 The reflected wave can be prevented from returning. Further, the phase difference between the voltages applied to the power feeding points 23a and 23b can be secured to 180 degrees. As a result, a plasma of SiH4 gas is generated.

However, when the impedance matching device 16 is disposed downstream of the LC bridge type balanced-unbalanced converter 18, that is, between the LC bridge type balanced-unbalanced converter 18 and the power feeding points 23a and 23b, Since the LC circuit built in the impedance matching unit 16 is adjusted for impedance matching between the load, the power supply and the transmission line, the phase difference between the voltages applied to the power feeding points 23a and 23b cannot be secured at 180 degrees. Therefore, it is important that the location where the impedance matching device 16 is disposed is upstream of the LC bridge type balun converter 18. That is, the device configuration of the power supply circuit from the high-frequency power supply 14 to the power supply points 23a and 23b of the pair of electrodes includes a high-frequency power supply, an impedance matching device, It is important to arrange the balanced conversion device, the balanced transmission circuit, and the power supply point in this order in order to ensure a voltage phase difference of 180 degrees.

In the power supply from the first and second power supply lines 22a and 22b to the power supply points 23a and 23b, the coaxial cables 21a and 21b in which the outer conductors are fixed and short-circuited, and the pair of electrodes serving as loads have the same balance. Since it has electrical characteristics as a transmission line, generation of leakage current is suppressed. As a result, abnormal discharge and local discharge do not occur. Furthermore, as described above, since the phase difference between the voltages applied to the power supply points 23a and 23b is 180 degrees, that is, the state where positive and negative voltages are applied to the pair of electrodes, No plasma is generated. Therefore, there is no generation of plasma due to the leakage current related to the ground structure and the wiring state around the pair of electrodes, which is a problem in the related art, and stable plasma with good reproducibility can be generated.

In the above process, when the SiH4 gas is turned into plasma, radicals such as SiH3, SiH2, and SiH existing in the plasma are diffused by a diffusion phenomenon, and are adsorbed on the surface of the substrate 12, whereby an a-Si film is deposited. I do. It is a known technique that microcrystalline Si or thin-film polycrystalline Si can be formed by optimizing the flow ratio, pressure and power of SiH4 and H2 in the film forming conditions.

Specific conditions for forming a film by the above procedure will be described below. An a-Si film having a film forming speed of 1 nm / s and a film thickness distribution of ± 10% is formed on a glass substrate 12 having a size of about 1200 mm × 300 mm (thickness 4 mm).

The film forming conditions are as follows.
(Film formation conditions)
● Discharge gas: SiH4
● Flow rate: 500sccm
● Pressure: 0.5 Torr (66.5 Pa)
● Electrode spacing: 2.5cm
● Power frequency: 60MHz
● Power: 500W
● Temperature of substrate: 180 ℃

  When the plasma is generated under the above-described film forming conditions, the power transmitted from the high-frequency power source 14 through the first coaxial cable 15, the impedance matching unit 16 and the second coaxial cable is coaxial with the LC bridge type balance-unbalance converter 18. A power supply point 23a of a pair of electrodes 2 and 4 through first and second power supply lines 22a and 22b in a balanced transmission line system including cables 19a and 19b, a vacuum connection terminal 20, and coaxial cables 21a and 21b. , 23b, so that the transmission characteristics at the connection between the power supply system and the pair of electrodes as the load are matched, and the generation of leakage current is suppressed. Therefore, the spatial distribution of the density of the generated plasma becomes uniform with good reproducibility as compared with the related art. As a result, the film thickness distribution of the formed a-Si becomes uniform with good reproducibility as compared with the conventional case. Numerically, a film can be formed when the a-Si film thickness distribution is within ± 10%. Note that a balanced transmission circuit (or a balanced transmission line) is a power transmission circuit composed of two conductors in which the currents flowing through both lines on the forward path and return path are equal in amplitude and 180 degrees out of phase. It is. In the prior art, this is realized by a circuit as shown in FIG. 20, but is not used in the field of plasma science and engineering due to strong electromagnetic field radiation.

The LC bridge type balanced-unbalanced converter used in this embodiment is a means for converting the unbalanced transmission type power transmission input to the device into a balanced transmission type. Thus, a super-top type balanced-unbalanced converter, a half-wavelength detour-type balanced-unbalanced converter, or the like can be used. Further, a device combining a power distributor and a phase shifter can be used.

Further, in the present embodiment, each of the pair of electrodes 2 and 4 has one power supply point (one pair), so the substrate size is limited to about 1200 mm × 300 mm. However, if the number of power supply points is increased, the width of the size becomes larger. Naturally, it is scalable.

In the manufacture of a-Si solar cells, thin film transistors, photosensitive drums, and the like, there is no problem in performance as long as the film thickness distribution is within ± 10%. According to the above embodiment, it is possible to obtain a significantly better film thickness distribution as compared with the conventional apparatus and method, even when the power supply frequency of 60 MHz is used. This means that the industrial value related to improvement in productivity and cost reduction in the field of manufacturing a-Si solar cells, thin film transistors, photosensitive drums and the like is extremely large.

(Example 2)
Second Embodiment A balanced transmission circuit according to a second embodiment of the present invention, a plasma surface treatment apparatus (plasma CVD apparatus) and a plasma surface treatment method (plasma CVD method) configured by the balanced transmission circuit will be described with reference to FIGS. .

First, the configuration of the device will be described. However, the same members as those shown in FIGS. 1 and 2 are denoted by the same reference numerals, and description thereof will be omitted. FIG. 4 is an explanatory view showing the concept of the plasma surface treatment apparatus according to the second embodiment, FIG. 5 is a schematic view showing the whole plasma surface treatment apparatus according to the second embodiment, and FIG. 6 is a view of the plasma surface treatment apparatus shown in FIG. It is explanatory drawing of the inside of a vacuum container.

First, the concept of the device will be described. The configuration of the apparatus is generally the same as that of the first embodiment shown in FIGS. 1 and 2, but is characterized in that the place where the substrate is installed is different. As shown in FIGS. 4 to 6, by providing a plurality of openings in a pair of electrodes, radial species in plasma generated between the electrodes are diffused to the outside through the openings. The feature of this configuration is that the installation place of the substrate 12 is not between the pair of electrodes 2 and 4 but outside between the electrodes. This means that the film formation conditions at the time of plasma generation can be selected without being affected by the thickness and material of the substrate. In particular, even when the pressure condition at the time of plasma generation is as high as several hundred Pa to several thousand Pa (several Torr to several tens Torr), the distance between the pair of electrodes can be set as narrow as 10 to 15 mm without being affected by the substrate. Is possible. This is an epoch-making merit that cannot be achieved by the conventional technology.

In FIGS. 5 and 6, reference numeral 25 denotes a substrate holder which holds the substrate 12 and which is heated to a temperature of 80 ° C. to 350 ° C. by a built-in substrate heater 3 not shown. The substrate 12 is placed on a substrate holder 25 disposed outside, not between the pair of electrodes 2 and 4. A large number of openings 6 having a diameter of about 2 mm to 10 mm are arranged in the first and second non-ground electrodes 2 and 4 at an aperture ratio of 40% to 80%. Since the resistance of the diffusion of the radial species generated between the electrodes in the direction of the substrate 12 to the outside of the electrode is reduced, the aperture ratio of the second non-grounded electrode 4 is reduced. It is preferable that the aperture ratio is larger than the aperture ratio.

Next, a method for forming a-Si for an a-Si solar cell using the plasma surface treatment apparatus having the above-described configuration will be described. 5 and 6, the substrate 12 is set on the substrate holder 25 in advance, the vacuum pump 11 is operated to remove the impurity gas and the like in the vacuum vessel 1, and then the SiH4 is discharged from the discharge gas supply pipes 8a and 8b. While supplying a gas at, for example, 1,000 sccm and a pressure of 5.0 Torr (666.5 Pa), a high frequency power, for example, a power of a frequency of 70 MHz, for example, 1,500 W is supplied to the pair of electrodes 2 and 4. The electrode spacing is 1.5 cm, and the substrate temperature is kept in the range of 80 to 350 ° C., for example, 200 ° C.

That is, the output of the high-frequency power supply 14 is 1,500 W at 70 MHz, for example, and the output is the first coaxial cable 15, the impedance matching unit 16, the second coaxial cable 17, the LC bridge type balance-unbalance converter 18, the external conductor. The electric power is supplied via the coaxial cables 19a and 19b which are fixed and short-circuited, the vacuum connection terminal 20 and the coaxial cables 21a and 21b which are fixed and short-circuited with the outer conductor and the first and second power supply lines 22a and 22b. The power is supplied to the feeding points 23a and 23b. In this case, by adjusting the LC of the impedance matching unit 16 and by using the power value monitor of the traveling wave and the reflected wave attached to the high frequency power supply 14 in combination, the upstream side of the impedance matching unit 16 The reflected wave can be prevented from returning. Further, the phase difference between the voltages applied to the power feeding points 23a and 23b can be secured to 180 degrees. As a result, a plasma of SiH4 gas is generated.

However, when the impedance matching device 16 is disposed downstream of the LC bridge type balanced-unbalanced converter 18, that is, between the LC bridge type balanced-unbalanced converter 18 and the power feeding points 23a and 23b, Since the LC circuit built in the impedance matching device 16 is adjusted for impedance matching between the load, the power supply, and the transmission line, the phase difference between the voltages applied to the power supply points 23a and 23b cannot be 180 degrees. Therefore, the place where the impedance matching device 16 is disposed needs to be on the upstream side of the LC bridge type balun converter 18.

In the power supply from the first and second power supply lines 22a and 22b to the power supply points 23a and 23b, the coaxial cables 21a and 21b in which the outer conductors are fixed and short-circuited and the pair of electrodes serving as the load are the same. Since it has electrical characteristics as a balanced transmission line, generation of leakage current is suppressed. As a result, abnormal discharge and local discharge do not occur. Furthermore, as described above, since the phase difference between the voltages applied to the power supply points 23a and 23b is 180 degrees, that is, the state where positive and negative voltages are applied to the pair of electrodes, No plasma is generated. Therefore, there is no generation of plasma due to the leakage current related to the ground structure and the wiring state around the pair of electrodes, which is a problem in the prior art, and even when the pressure condition is 5.0 Torr (666.5 Pa), the plasma is reproduced. Good and stable plasma can be generated.

In the above process, when the SiH4 gas is turned into plasma, electrically neutral radical species such as SiH3, SiH2, and SiH existing in the plasma are diffused by a diffusion phenomenon, and the substrate 12 mounted on the substrate holder 25 is diffused. Adsorbed on the surface. As a result, an a-Si film is deposited. It is a known technique that microcrystalline Si or thin-film polycrystalline Si can be formed by optimizing the flow ratio, pressure and power of SiH4 and H2 in the film forming conditions.

Specific conditions for forming a film by the above procedure will be described below. A film is formed on a glass substrate 12 having a size of about 1200 mm × 300 mm (thickness: 4 mm) with a film forming speed of 2 nm / s and a film thickness distribution of ± 10%.

The film forming conditions are as follows.
(Film formation conditions)
● Discharge gas: SiH4
● Flow rate: 1000sccm
● Pressure: 5 Torr (666.5 Pa)
● Electrode spacing: 1.5cm
● Power frequency: 70MHz
● Power: 1500W
● Substrate temperature: 200 ° C

  When the plasma is generated under the above-described film forming conditions, the power transmitted from the high-frequency power source 14 through the first coaxial cable 15, the impedance matching unit 16 and the second coaxial cable is coaxial with the LC bridge type balance-unbalance converter 18. A power supply point 23a of a pair of electrodes 2 and 4 through a first and second power supply lines 22a and 22b in a balanced transmission line system including cables 19a and 19b, a vacuum connection terminal 20, and coaxial cables 21a and 21b. , 23b, the transmission characteristics at the connection between the power supply system and the additional pair of electrodes are matched, and the occurrence of leakage current is suppressed. Therefore, the spatial distribution of the density of the generated plasma becomes uniform with good reproducibility as compared with the related art. As a result, the film thickness distribution of the formed a-Si becomes uniform with good reproducibility as compared with the conventional case. Numerically, a film can be formed when the a-Si film thickness distribution is within ± 10. Note that a balanced transmission line (or balanced transmission circuit) is a power transmission circuit composed of two conductors in which the amplitude of the current flowing through both lines is equal and the phases are different by 180 degrees. In the prior art, this is realized by a circuit as shown in FIG. 20, but is not used in the field of plasma science and engineering due to strong electromagnetic field radiation.

The LC bridge type balanced-unbalanced converter used in this embodiment is a means for converting the unbalanced transmission type power transmission input to the device into a balanced transmission type. Thus, a super-top type balanced-unbalanced converter, a half-wavelength detour-type balanced-unbalanced converter, or the like can be used. Further, a device combining a power distributor and a phase shifter can be used.

Further, in the present embodiment, each of the pair of electrodes 2 and 4 has one power supply point (a pair), and thus the substrate size is limited to about 1200 mm × 300 mm. However, if the number of power supply points is increased, the width of the size becomes larger. Naturally, it is scalable.

In the manufacture of a-Si solar cells, thin film transistors, photosensitive drums, and the like, there is no problem in performance as long as the film thickness distribution is within ± 10%. According to the above-described embodiment, even when a power supply frequency of 70 MHz is used, a significantly better film thickness distribution can be obtained as compared with the conventional apparatus and method. This means that the industrial value related to improvement in productivity and cost reduction in the field of manufacturing a-Si solar cells, thin film transistors, photosensitive drums and the like is extremely large.

(Example 3)
Third Embodiment A balanced transmission circuit according to a third embodiment of the present invention, a plasma surface treatment apparatus (plasma CVD apparatus) and a plasma surface treatment method (plasma CVD method) configured by the balanced transmission circuit will be described with reference to FIGS. 7 and 8. .

First, the configuration of the device will be described. However, the same members as those shown in FIGS. 1 to 6 are denoted by the same reference numerals, and description thereof will be omitted. FIG. 7 is a schematic view showing the entire plasma surface treatment apparatus according to the third embodiment, and FIG. 8 is an explanatory view of the inside of a vacuum vessel of the plasma surface treatment apparatus shown in FIG.

First, the configuration of the device will be described. The configuration of the device is generally the same as in the first and second embodiments (FIGS. 1 to 6), except that the LC bridge type balance-unbalance converter 18, the coaxial cables 27a and 27b, and the vacuum connection terminal 28a , 28b, coaxial cables 29a, 29b, and a short-circuit conductor 30 in a balanced transmission circuit.

7 and 8, reference numerals 27a and 27b denote coaxial cables. Each core wire at one end of the coaxial cable is connected to the output terminal of the LC bridge type balanced-unbalanced conversion device 18, and The outer conductor is in close contact or short-circuited by the conductor material. The other ends of the coaxial cables 27a and 27b are connected to one ends of the coaxial cables 29a and 29b via vacuum connection terminals. The outer conductors at the other ends of the coaxial cables 29a, 29b are short-circuited by short-circuiting conductors, and the respective core wires at the ends are connected to the power feeding points 23a, 23a via the first and second feeding lines 22a, 22b. 23b.

Next, a method for forming a-Si for an a-Si solar cell using the plasma surface treatment apparatus having the above-described configuration will be described. 7 and 8, the substrate 12 is set on the substrate holder 25 in advance, and the vacuum pump 11 is operated to remove the impurity gas and the like in the vacuum vessel 1. Then, the SiH4 is discharged from the discharge gas supply pipes 8a and 8b. While supplying a gas at, for example, 1,000 sccm and a pressure of 5.0 Torr (666.5 Pa), a high frequency power, for example, a power of a frequency of 70 MHz, for example, 1,500 W is supplied to the pair of electrodes 2 and 4. The electrode spacing is 1.5 cm, and the substrate temperature is kept in the range of 80 to 350 ° C., for example, 200 ° C.

That is, the output of the high-frequency power supply 14 is, for example, 1,500 W at 80 MHz, and the output is the first coaxial cable 15, the impedance matching unit 16, the second coaxial cable 17, the LC bridge type balance-unbalance converter 18, Power is supplied to power supply points 23a and 23b through cables 27a and 27b, vacuum connection terminals 28a and 28b, coaxial cables 29a and 29b, and first and second power supply lines 22a and 22b. In this case, the reflected wave of the supplied power is prevented from returning to the upstream side of the impedance matching unit 16 by using the impedance matching unit 16 and the power value monitor of the traveling wave and the reflected wave attached to the high-frequency power supply 14 in combination. Can be. Also, a phase difference of 180 degrees between the voltages applied to the power feeding points 23a and 23b can be secured. As a result, a plasma of SiH4 gas is generated.

However, when the impedance matching device 16 is disposed downstream of the LC bridge type balanced-unbalanced converter 18, that is, between the LC bridge type balanced-unbalanced converter 18 and the power feeding points 23a and 23b, Since the LC circuit built in the impedance matching device 16 is adjusted for impedance matching between the load, the power supply, and the transmission line, the phase difference between the voltages applied to the power supply points 23a and 23b cannot be 180 degrees. Therefore, the place where the impedance matching device 16 is disposed needs to be on the upstream side of the LC bridge type balun converter 18.

In the power supply from the first and second power supply lines 22a and 22b to the power supply points 23a and 23b, the outer conductors at the ends of the coaxial cables 27a and 27b on the side of the LC bridge type balanced-unbalanced converter 18 are connected. The coaxial cables 29a and 29b are closed by a closed loop circuit formed by short-circuiting the outer conductors at the ends of the first and second power supply lines 22a and 22b with the short-circuit conductor 30. As in the first and second embodiments, the current flowing through the cables 27a, 27b and the outer conductors of the coaxial cables 29a, 29b is not discharged to the outside. As a result, no abnormal discharge or local discharge occurs around the first and second power supply lines 22a, 22b and near the power supply points 23a, 23b. Furthermore, as described above, since the phase difference between the voltages applied to the power supply points 23a and 23b is 180 degrees, that is, the state where positive and negative voltages are applied to the pair of electrodes, No plasma is generated. Therefore, there is no generation of plasma due to the leakage current related to the ground structure and the wiring state around the pair of electrodes, which is a problem in the prior art, and even when the pressure condition is 5.0 Torr (666.5 Pa), the plasma is reproduced. Good and stable plasma can be generated.

In the above process, when the SiH4 gas is turned into plasma, electrically neutral radical species such as SiH3, SiH2, and SiH existing in the plasma are diffused by a diffusion phenomenon, and the radicals of the pair of electrodes 2 and 4 are formed. It is adsorbed on the surface of the substrate 12 placed on the substrate holder 25 from between. As a result, an a-Si film is deposited. It is a known technique that microcrystalline Si or thin-film polycrystalline Si can be formed by optimizing the flow ratio, pressure and power of SiH4 and H2 in the film forming conditions.

Specific conditions for forming a film by the above procedure will be described below. An a-Si film having a film forming speed of 2 nm / s and a film thickness distribution of ± 10% is formed on a glass substrate 12 having a size of about 1200 mm × 300 mm (thickness: 4 mm).

The film forming conditions are as follows.
(Film formation conditions)
● Discharge gas: SiH4
● Flow rate: 1,000sccm
● Pressure: 5 Torr (666.5 Pa)
● Electrode spacing: 1.5cm
● Power frequency: 70MHz
● Power: 1500W
● Substrate temperature: 200 ° C

  When the plasma is generated under the above-described film forming conditions, the power transmitted from the high-frequency power source 14 through the first coaxial cable 15, the impedance matching unit 16 and the second coaxial cable is coaxial with the LC bridge type balance-unbalance converter 18. In a balanced transmission line system including cables 27a and 27b, vacuum connection terminals 28a and 28b, coaxial cables 29a and 29b, and a short-circuit conductor 30, a pair of electrodes 2 are connected via first and second power supply lines 22a and 22b. , 4 can be supplied to the power supply points 23a and 23b, so that the transmission characteristics at the connection between the power supply system and the additional pair of electrodes are matched, and generation of leakage current is suppressed. Therefore, the spatial distribution of the density of the generated plasma becomes uniform with good reproducibility as compared with the related art. As a result, the film thickness distribution of the formed a-Si becomes uniform with good reproducibility as compared with the conventional case. Numerically, a film can be formed when the a-Si film thickness distribution is within ± 10. Note that a balanced transmission circuit is a power transmission circuit composed of two conductors in which currents flowing through both lines on the outward path and the return path are equal in amplitude and 180 degrees out of phase. In the prior art, this is realized by a circuit as shown in FIG. 20, but is not used in the field of plasma because of strong electromagnetic field radiation.

The LC bridge type balanced-unbalanced converter used in this embodiment is a means for converting the unbalanced transmission type power transmission input to the device into a balanced transmission type. Thus, a super-top type balanced-unbalanced converter, a half-wavelength detour-type balanced-unbalanced converter, or the like can be used. Further, a device combining a power distributor and a phase shifter can be used.

Further, in the present embodiment, each of the pair of electrodes 2 and 4 has one power supply point (a pair), and thus the substrate size is limited to about 1200 mm × 300 mm. However, if the number of power supply points is increased, the width of the size becomes larger. Naturally, it is scalable.

In the manufacture of a-Si solar cells, thin film transistors, photosensitive drums, and the like, there is no problem in performance as long as the film thickness distribution is within ± 10%. According to the above embodiment, it is possible to obtain a significantly better film thickness distribution than the conventional apparatus and method even when using a power supply frequency of 80 MHz. This means that the industrial value related to improvement in productivity and cost reduction in the field of manufacturing a-Si solar cells, thin film transistors, photosensitive drums and the like is extremely large.

(Example 4)
Fourth Embodiment A balanced transmission circuit according to a fourth embodiment of the present invention, a plasma surface treatment apparatus (plasma CVD apparatus) and a plasma surface treatment method (plasma CVD method) configured by the balanced transmission circuit will be described with reference to FIGS. .

FIG. 9 is a schematic view showing the entire plasma surface treatment apparatus according to the fourth embodiment, FIG. 10 is an explanatory view showing a through hole provided in the first electrode of the plasma surface treatment apparatus shown in FIG. 9, and FIG. FIG. 12 is an explanatory diagram showing power supply point wiring of the illustrated plasma surface treatment apparatus, FIG. 12 is an explanatory diagram showing a standing wave of a voltage generated between a pair of electrodes according to the fourth embodiment, and FIG. FIG. 14 is an explanatory diagram showing the position of the antinode of the standing wave of the voltage generated between the electrodes, and FIG. 14 is an explanatory diagram showing an application example of the plasma surface treatment apparatus according to the fourth embodiment to the generation of large-area plasma.

First, the configuration of the device will be described. However, the same members as those shown in FIGS. 1 to 8 are denoted by the same reference numerals, and description thereof will be omitted. The feature of the device configuration of the fourth embodiment is that a plurality of through holes are provided in one of a pair of electrodes, for example, the first electrode 2a in FIGS. The coaxial cables 53b and 63b are connected to the feeding points 23b and 23d arranged on the surface of the second electrode 4a, the number of feeding points is plural, and the distance between the feeding points is the power consumption. Or less, preferably 1/16 or less of the wavelength of the above, and a power divider is used for power distribution.

9 to 11, reference numerals 2a and 4a denote first and second non-grounded electrodes, in which a large number of openings 6 having a diameter of about 2 mm to 10 mm are arranged at an aperture ratio of 40% to 80%. Through holes 45a and 45b are arranged on the first non-grounded electrode 2a at a distance L0, and power supply points 23a and 23c are arranged on side surfaces of the through holes 45a and 45b. The power supply points 23b and 23d are arranged on the second non-grounded electrode 4a in the vicinity of the power supply points 23a and 23c and at a distance L0. However, the power supply points 23a and 23b are located at the closest positions, and the power supply points 23c and 23d are located at the closest positions.

Reference numerals 49a and 49b denote third and fourth coaxial cables having the same length, and the outer conductors at one end thereof are short-circuited and connected to the ground, and their core wires are connected to the LC bridge type unbalanced cable. It is connected to the output terminal of the balance converter 18. Reference numerals 50 and 60 denote first and second power dividers, respectively, for distributing power without giving a phase change or giving a certain phase change. Here, a T-type distributor is used. Reference numerals 51a and 51b denote fifth and sixth coaxial cables having the same length, one ends of which are both connected to the output terminal of the first power distributor 50, and the fifth coaxial cable. The other end of the cable 51a is connected to a tenth coaxial cable 53b via a second vacuum connection terminal 52b. The other end of the sixth coaxial cable 51b is connected to the twelfth coaxial cable 63b via the fourth vacuum connection terminal 62b. The core wires at the other ends of the tenth and twelfth cables 53b and 63b are connected to feed points 23b and 23d via second and fourth feed lines 22b and 22d of the same length, respectively.

Reference numerals 61a and 61b denote seventh and eighth coaxial cables, which have the same length as the fifth and sixth coaxial cables 51a and 51b, and one end of which is connected to the second power distributor. The other end of the seventh coaxial cable 61a is connected to the ninth coaxial cable 53a via the first vacuum connection terminal 52a. The other end of the eighth coaxial cable 61b is connected to the eleventh coaxial cable 63a via the third vacuum connection terminal 62a. The core wires at the other ends of the ninth and eleventh coaxial cables 53a and 63a are connected to feed points 23a and 23c via first and third feed lines 22a and 22c, respectively. However, the lengths of the first, second, third, and fourth power supply lines 22a, 22b, 22c, 22d are the same.

The outer conductors at the ends of the ninth and tenth coaxial cables 53a and 53b on the side of the feeding points 23a and 23b are short-circuited by the first short-circuit conductor 30a. The outer conductors at the ends of the eleventh and twelfth coaxial cables 63a and 63b on the side of the feeding points 23c and 23d are short-circuited by the second short-circuiting conductor 30b. However, the lengths of the first and second short-circuit conductors 30a and 30b are set to have a function of short-circuiting, so that the used power has a wavelength of 30 tenths, and preferably 60 tenths or less. Is good. If the length is longer than this, the impedance increases due to the skin effect, and a high-frequency current to flow inside the outer conductor of the coaxial cable flows out of the outer conductor (leakage current), causing a problem. That is, it is important that the lengths of the first and second short-circuit conductors 30a and 30b are set to be equal to or less than one sixth of the wavelength.

A feature of the configuration of the apparatus shown in FIGS. 9 to 11 is that the installation place of the substrate 12 is not between the pair of electrodes 2a and 4a, but outside between the electrodes as in the second and third embodiments. . This means that the film formation conditions at the time of plasma generation can be selected without being affected by the thickness and material of the substrate. In particular, even when the pressure condition at the time of plasma generation is as high as several hundred Pa to several thousand Pa (several Torr to several tens Torr), the distance between the pair of electrodes can be set as narrow as 10 to 15 mm without being affected by the substrate. This is an epoch-making merit that cannot be achieved by the conventional technology.

Next, a method for forming a-Si for an a-Si solar cell using the plasma surface treatment apparatus having the above-described configuration will be described. 9 to 11, the substrate 12 is previously set on the substrate holder 25, the vacuum pump 11 is operated to remove the impurity gas and the like in the vacuum vessel 1, and then the SiH4 is discharged from the discharge gas supply pipes 8a and 8b. While supplying a gas at, for example, 1,000 sccm and a pressure of 5.0 Torr (666.5 Pa), a high-frequency power, for example, a power of a frequency of 70 MHz, for example, 1,000 W is supplied to the pair of electrodes 2a and 4a. The electrode spacing is 1.5 cm, and the substrate temperature is kept in the range of 80 to 350 ° C., for example, 200 ° C.

That is, the output of the high-frequency power supply 14 is, for example, 1,000 W at 70 MHz, and the output is the first coaxial cable 15, the impedance matching unit 16, the second coaxial cable 17, the LC bridge type balance-unbalance converter 18, The power is transmitted to the first and second power distributors 50 and 60 via the third and fourth coaxial cables 49a and 49b whose conductors are short-circuited, respectively.

The power transmitted to the first power distributor 50 is divided into two and transmitted to the power supply points 23b and 23d of the second non-grounded electrode 4a by the fifth and sixth coaxial cables 51a and 51b, respectively. Is done. In this case, the power transmission from the fifth coaxial cable 51a propagates through the second vacuum connection terminal 52b, the tenth coaxial cable 53b, and the second power supply line 22b. The power transmission from the sixth coaxial cable 51b propagates through the fourth vacuum connection terminal 62b, the twelfth coaxial cable 63b, and the fourth power supply line 22d.

The power transmitted to the second power distributor 60 is divided into two and transmitted to the power supply points 23a and 23c of the first non-grounded electrode 2a by the seventh and eighth coaxial cables 61a and 61b, respectively. Is done. In this case, power transmission from the seventh coaxial cable 61a propagates through the first vacuum connection terminal 52a, the ninth coaxial cable 53a, and the first power supply line 22a. The power transmission from the eighth coaxial cable 61b propagates through the third vacuum connection terminal 62a, the eleventh coaxial cable 63a, and the third power supply line 22c.

Two outputs at the output terminals of the LC bridge type balanced-unbalanced converter 18 are powers having a voltage phase difference of 180 degrees, and both are the third and fourth coaxial cables in which the outer conductors are short-circuited. The ninth and tenth coaxial cables 53a and 53b in which the outer conductors are short-circuited by the first short-circuit conductor 30a, and the eleventh and tenth coaxial cables 53a and 53b in which the outer conductors are short-circuited by the second short-circuit conductor 30b. Since the power is transmitted through a balanced circuit having the twelfth coaxial cables 63a and 63b as output units, the power is supplied to the power supply points 23a and 23b and the power supply points 23c and 23d. Is the same as in the case of the first, second and third embodiments. As a result, no abnormal discharge or local discharge occurs around the first and second power supply lines 22a and 22b and the power supply points 23a and 23b, and around the power supply lines 22c and 22d and near the power supply points 23c and 23d. Further, as described above, since the phase difference between the voltages applied to the power supply points 23a and 23b, and 23c and 23d is 180 degrees, that is, since the positive and negative voltages are applied to the pair of electrodes, No plasma is generated except between the electrodes. Therefore, there is no generation of plasma due to the leakage current related to the ground structure and the wiring state around the pair of electrodes, which is a problem in the related art. Even when the pressure condition is 5.0 Torr (666.5 Pa), stable plasma with good reproducibility can be generated.

By the way, the voltage waves of the power supplied from the power supply points 23a and 23b and the power supply points 23c and 23d propagate between the electrodes. That is, the two propagate from different directions and overlap with each other, so that an interference phenomenon occurs. This will be described with reference to FIGS. In FIG. 12, a distance x from the power supply point 23a of the electrode 2a in the direction of the power supply point 23c is x, a voltage wave propagating in the positive direction of x is W1 (x, t), a voltage wave propagating in the negative direction of x, That is, if a voltage wave propagating in the direction from the power supply point 23c to the power supply point 23a is W2 (x, t), the voltage wave is expressed as follows.
W1 (x, t) = V0 · sin (ωt + 2πx / λ)
W2 (x, t) = V0 · sin {ωt−2π (x−L0) / λ + Δθ}
Here, V0 is the amplitude of the voltage wave, ω is the angular frequency of the voltage, λ is the wavelength of the voltage wave, t is time, L0 is the interval between the power supply points 23a and 23c, and Δθ is the power supplied from the power supply point 23a. This is the phase difference between the voltage wave and the voltage wave of the power supplied from the power supply point 23c. The composite wave W (x, t) of the voltage is as follows.
W (x, t) = W1 (x, t) + W2 (x, t) = 2 · V0cos ｛2π (x−L0 / 2) / λ−Δθ / 2｝ · sin ｛ωt + (πL0 / λ + Δθ / 2)
FIG. 13 conceptually shows the composite wave W (x, t). FIG. 13 shows that when Δθ = 0, the intensity of the generated plasma is strong at the central part (x = L0 / 2) between the power supply points and becomes weaker as the distance from the central part increases. The strong plasma portion indicates that when Δθ> 0, the strong plasma portion moves to one power feeding point side, and when Δθ <0, it moves to the other power feeding point side.

In the case of the devices shown in FIGS. 9 to 11, Δθ = 0 because the lengths of the propagation paths from the LC bridge type balun converter to the feeding point are equal. Since this case corresponds to the case of Δθ = 0 in FIG. 13, stable plasma is generated centering on the midpoint between the power supply points. As shown in FIG. 13, the range in which the plasma intensity is considered to be substantially uniform is that the interval between the feeding points 23a and 23c is one-tenth or less, preferably one-sixteenth of the wavelength of the power used. Below. Therefore, when the power frequency is 60 MHz (wavelength = 5 m), the width is about 50 cm, when the power frequency is 70 MHz (wavelength = 4.2 m), the width is about 42 cm, and when the power frequency is 100 MHz (wavelength = 3 m), the width is about 30 cm. This indicates that plasma can be obtained.

The result showing the concept of the standing wave shown in FIG. 13 means that a large area and uniform plasma can be easily generated by VHF plasma generation, which is considered difficult in the related art. That is, if the distance between the power supply points of the pair of electrodes is maintained at about one-tenth of the wavelength of the power to be used, and if the number is increased, uniform plasma having a large area and a proportional area can be easily generated. For example, as shown in FIG. 14, 25 through holes 45 are arranged at equal intervals, for example, one tenth of the wavelength λ, and 25 power supply points 23a and 23b are installed near each of the through holes. If the power supply frequency is 60 MHz, an area of 2 mx 2 m (interval 50 cm x 4 = 2 m), if the power supply frequency is 70 MHz, an area of 1.68 mx 1.68 m (interval 42 cm x 4 = 1.68 m) and if the power supply frequency is 100 MHz, 1.2 mx 1. It is estimated that a uniform VHF plasma can be generated over an area of 2 m (interval 30 cm × 4 = 1.2 m).

However, when the impedance matching device 16 is disposed downstream of the LC bridge type balanced-unbalanced converter 18, that is, between the LC bridge type balanced-unbalanced converter 18 and the power feeding points 23a and 23b, Since the LC circuit built in the impedance matching device 16 is adjusted for impedance matching between the load, the power supply, and the transmission line, the phase difference between the voltages applied to the power supply points 23a and 23b cannot be 180 degrees. Therefore, the place where the impedance matching device 16 is disposed needs to be on the upstream side of the LC bridge type balun converter 18.

In the above process, when the SiH4 gas is turned into plasma, electrically neutral radical species such as SiH3, SiH2, and SiH present in the plasma are diffused by a diffusion phenomenon, and the radicals between the pair of electrodes 2a, 4a are diffused. From the substrate 12 placed on the substrate holder 25. As a result, an a-Si film is deposited. It is a known technique that microcrystalline Si or thin-film polycrystalline Si can be formed by optimizing the flow ratio, pressure and power of SiH4 and H2 in the film forming conditions.

Specific conditions for forming a film by the above procedure will be described below. An a-Si film having a film forming speed of 2 nm / s and a film thickness distribution of ± 10% is formed on a glass substrate 12 having a size of about 80 cm × 30 cm.

The film forming conditions are as follows.
(Film formation conditions)
● Discharge gas: SiH4
● Flow rate: 500sccm
● Pressure: 5 Torr (666.5 Pa)
● Electrode spacing: 1.5cm
● Power frequency: 70MHz
● Interval between power supply points: 40cm
● Power: 1000W
● Substrate temperature: 200 ° C

  When the plasma is generated under the above film forming conditions, the power transmitted from the high frequency power supply 14 through the first coaxial cable 15, the impedance matching unit 16 and the second coaxial cable is converted into the LC bridge type balance-unbalance converter 18 and the second coaxial cable. Third and fourth coaxial cables 49a and 49b, first and second power distributors 50 and 60, fifth, sixth, seventh and eighth coaxial cables and first, second, third and fourth coaxial cables. Composed of the vacuum connection terminals 52a, 52b, 52c, 52d, the ninth, tenth, eleventh, and twelfth coaxial cables 53a, 53b, 53c, 53d, and the first and second short-circuit conductors 30a, 30b. In a transmission line system, power supply points 23a, 23b and 23c of a pair of electrodes 2a and 4a are connected via first and second power supply lines 22a and 22b and third and fourth power supply lines 22c and 22d. Can be supplied to 3d, the transmission characteristics at the joints aligned with the pair of electrodes which is a load and power supply system, the occurrence of leakage current is suppressed. Therefore, the spatial distribution of the density of the generated plasma becomes uniform with good reproducibility as compared with the related art. As a result, the film thickness distribution of the formed a-Si becomes uniform with good reproducibility as compared with the conventional case. Numerically, film formation is possible with a-Si film thickness distribution within ± 10.

In the present embodiment, since the power supply points are set to two points (a pair) for each of the pair of electrodes 2a and 4a, the substrate size is restricted to about 80 cm × 30 cm. However, as shown in FIG. If a large number of are installed at equal intervals, that is, if the number is increased, it is possible to easily cope with a large area substrate of 1 to 2 m class.

In the manufacture of a-Si solar cells, thin film transistors, photosensitive drums, and the like, there is no problem in performance as long as the film thickness distribution is within ± 10%. According to the above embodiment, it is possible to obtain a significantly better film thickness distribution as compared with the conventional apparatus and method even when using a power supply frequency of 60 MHz to 100 MHz. This means that the industrial value related to improvement in productivity and cost reduction in the field of manufacturing a-Si solar cells, thin film transistors, photosensitive drums and the like is extremely large.

FIG. 1 is a schematic diagram illustrating the entirety of a plasma surface treatment apparatus according to a first embodiment. FIG. 2 is an explanatory view of the inside of a vacuum vessel of the plasma surface treatment apparatus shown in FIG. 1. FIG. 1 is an explanatory diagram showing a configuration of a balanced transmission circuit using a coaxial cable according to the present invention. FIG. 4 is an explanatory diagram illustrating the general concept of a plasma surface treatment apparatus according to a second embodiment. FIG. 4 is a schematic diagram showing the entirety of a plasma surface treatment apparatus according to a second embodiment. FIG. 6 is an explanatory view of the inside of a vacuum vessel of the plasma surface treatment apparatus shown in FIG. 5. FIG. 9 is a schematic view showing the whole plasma surface treatment apparatus according to a third embodiment. FIG. 8 is an explanatory view of the inside of a vacuum vessel of the plasma surface treatment apparatus shown in FIG. 7. FIG. 9 is a schematic diagram showing the entirety of a plasma surface treatment apparatus according to a fourth embodiment. FIG. 10 is an explanatory view showing a through hole provided in a first electrode of the plasma surface treatment apparatus shown in FIG. 9. FIG. 10 is an explanatory diagram showing power supply point wiring of the plasma surface treatment apparatus shown in FIG. 9. FIG. 14 is an explanatory diagram illustrating a standing wave of a voltage generated between a pair of electrodes according to the fourth embodiment. FIG. 13 is an explanatory diagram showing positions of antinodes of a standing wave of a voltage generated between a pair of electrodes according to the fourth embodiment. FIG. 13 is an explanatory diagram showing an application example of the plasma surface treatment apparatus according to the fourth embodiment to generation of large-area plasma. FIG. 4 is an explanatory view showing a configuration of a first typical example of a conventional plasma surface treatment apparatus. FIG. 4 is an explanatory diagram showing a configuration of a second typical example of a conventional plasma surface treatment apparatus. FIG. 9 is an explanatory view showing a configuration of a third typical example of a conventional plasma surface treatment apparatus. FIG. 2 is an explanatory diagram showing a configuration of a conventional super-top type balance-unbalance converter. FIG. 4 is an explanatory diagram showing a configuration of a conventional half-wavelength detour-type balance-unbalance converter. FIG. 3 is an explanatory diagram showing a configuration of a conventional balanced transmission circuit.

Explanation of reference numerals

1. . . Vacuum vessel,
2. . . A first ungrounded electrode,
3. . . Substrate heater not shown,
4. . . A second ungrounded electrode,
5a, 5b. . . Insulator support,
6. . . Opening,
7. . . Earth shield,
8a, 8b. . . Discharge gas supply pipe,
9. . . Straightening hole,
10. . . Exhaust pipe,
11. . . Vacuum pump, not shown,
12. . . substrate,
13. . . Gate valve not shown,
14． . . High frequency power supply,
15. . . A first coaxial cable,
16. . . Impedance matching device,
17. . . A second coaxial cable,
18. . . LC bridge type balance-unbalance converter,
22a, 22b. . . First and second feeders,
23a, 23b. . . Power feeding point,
25. . . Board holder,
27a, 27b. . . coaxial cable,
28a, 28b. . . Connection terminal for vacuum,
29a, 29b. . . coaxial cable,
30. . . Short-circuit conductor.

Claims (8)

A vacuum vessel provided with an exhaust system, a discharge gas supply system for supplying a discharge gas into the vacuum vessel, an electrode for plasma generation, a power supply comprising a high-frequency power supply, an impedance matching device, and a balance-unbalance converter. And a substrate holding means for arranging a substrate to be subjected to plasma processing, and a balanced transmission circuit used in a plasma surface treatment apparatus for processing the surface of the substrate using generated plasma. The outer conductors of the coaxial cables having substantially the same length are short-circuited at least at both ends thereof, and the respective core wires at one end of the two coaxial cables are used as input portions, and the respective core wires at the other end are used as input portions. A balanced transmission circuit characterized by having a configuration as an output unit. A vacuum vessel provided with an exhaust system, a discharge gas supply system for supplying a discharge gas into the vacuum vessel, an electrode for plasma generation, a power supply comprising a high-frequency power supply, an impedance matching device, and a balance-unbalance converter. And a substrate holding means for arranging a substrate to be subjected to plasma processing, and a balanced transmission circuit used in a plasma surface treatment apparatus for processing the surface of the substrate using generated plasma. The outer conductors of the coaxial cables having substantially the same length are short-circuited at least at both ends by other conductors, and each core wire at one end of the two coaxial cables is used as an input unit, and the other end is used. Characterized in that each core wire is used as an output unit. A vacuum vessel provided with an exhaust system, a discharge gas supply system for supplying a discharge gas into the vacuum vessel, an electrode for plasma generation, a power supply comprising a high-frequency power supply, an impedance matching device, and a balance-unbalance converter. A system and a substrate holding means for arranging a substrate to be subjected to plasma processing, comprising: a balanced transmission method used in a plasma surface treatment apparatus for treating a surface of a substrate by using generated plasma; 3. An output of the balanced-unbalanced converter is transmitted from an output circuit of the balanced-unbalanced converter to a power supply point installed on the electrode, using a balanced transmission circuit having the configuration described in (2). Transmission method. A vacuum vessel having an exhaust system, a discharge gas supply system for supplying a discharge gas into the vacuum vessel, a pair of electrodes including first and second electrodes for generating plasma, and impedance matching with a high frequency power supply A plasma supply apparatus comprising a power supply system comprising a vessel and an equilibrium-unbalance converter, and a substrate holding means for arranging a substrate to be subjected to plasma processing, wherein the plasma surface processing apparatus uses a generated plasma to process the surface of the substrate. A plurality of openings are provided in a pair of electrodes, a power supply point is arranged on each periphery of the pair of electrodes, and the power supply is performed by using a balanced transmission circuit having the configuration according to claim 1 or 2. A plasma surface treatment apparatus having a configuration in which an output circuit of an equilibrium-unbalance converter for a system component is connected to a power supply point of the pair of electrodes. A vacuum vessel having an exhaust system, a discharge gas supply system for supplying a discharge gas into the vacuum vessel, a pair of electrodes including first and second electrodes for generating plasma, and impedance matching with a high frequency power supply A plasma supply apparatus comprising a power supply system comprising a vessel and an equilibrium-unbalance converter, and a substrate holding means for arranging a substrate to be subjected to plasma processing, wherein the plasma surface processing apparatus uses a generated plasma to process the surface of the substrate. A substrate is disposed outside between the pair of electrodes, a plurality of openings are provided in the first and second electrodes, respectively, and a plurality of through holes are provided in the first electrode at equal intervals, A power supply point of the first electrode is provided near each of the plurality of through holes, and a power supply point of the second electrode is provided at a position close to the respective through holes, and Has the configuration described in 1 or 2 It has a configuration in which the output circuit of the balance-unbalance conversion device of the power supply system component and the power supply points of the first and second electrodes are connected through the respective through holes using a balanced transmission circuit. A plasma surface treatment apparatus characterized by the above-mentioned. A vacuum vessel provided with an exhaust system, a discharge gas supply system for supplying a discharge gas into the vacuum vessel, a pair of electrodes including first and second electrodes for generating plasma, 3. A balanced transmission having the configuration according to claim 1 or 2, wherein a power supply point, a power supply system including a high-frequency power supply, an impedance matching device, and a balance-unbalance converter, a substrate holding unit for arranging a substrate to be subjected to plasma processing, and In a plasma surface treatment apparatus that includes a circuit and treats a surface of a substrate using generated plasma, an apparatus configuration of a power supply circuit that supplies power from the power supply system to the pair of electrodes includes a power flow path. A plasma surface characterized by being arranged from an upstream side to a downstream side in the order of a high-frequency power supply, an impedance matching device, a balun converter, a balanced transmission circuit, and a power supply point. Management apparatus. A vacuum vessel provided with an exhaust system, a discharge gas supply system for supplying a discharge gas into the vacuum vessel, a pair of electrodes including first and second electrodes for generating plasma, 3. A balanced transmission having the configuration according to claim 1 or 2, wherein a power supply point, a power supply system including a high-frequency power supply, an impedance matching device, and a balance-unbalance converter, a substrate holding unit for arranging a substrate to be subjected to plasma processing, and In a plasma surface treatment method comprising a circuit and treating a surface of a substrate using generated plasma, a device of a power supply circuit for supplying power from the power supply system to the pair of electrodes is provided upstream of a flow of power. Plasma surface treatment by the arrangement of high-frequency power supply, impedance matching device, balanced-unbalanced conversion device, balanced transmission circuit, and power supply point in order from side to downstream Plasma surface treatment method, which comprises carrying out. A vacuum vessel having an exhaust system, a discharge gas supply system for supplying a discharge gas into the vacuum vessel, a pair of electrodes including first and second electrodes for generating plasma, and impedance matching with a high frequency power supply A plasma surface treatment method comprising: a power supply system comprising a vessel and a balance-unbalance conversion device; and substrate holding means for arranging a substrate to be subjected to plasma treatment, wherein the surface of the substrate is treated using generated plasma. An output of the balanced-unbalanced converter is transmitted from an output circuit of the balanced-unbalanced converter to a power supply point provided on the electrode using a balanced transmission circuit having the configuration described in item 1 or 2, and A plasma surface treatment method comprising performing treatment.

Images