JP2004233648A

JP2004233648A - Display device and manufacturing method thereof

Info

Publication number: JP2004233648A
Application number: JP2003022021A
Authority: JP
Inventors: Masayuki Yazaki; 正幸矢崎; So Kinoshita; 創木下
Original assignee: Seiko Epson Corp
Current assignee: Seiko Epson Corp
Priority date: 2003-01-30
Filing date: 2003-01-30
Publication date: 2004-08-19

Abstract

<P>PROBLEM TO BE SOLVED: To provide a display device and method for manufacturing the same, which can assemble a liquid crystal panel, without bringing an uncured sealing member into contact with a liquid crystal, and which prevent variation in the cell thickness due to external stress, in a panel assembly process. <P>SOLUTION: In the display device 10, in which an element substrate 1 is disposed opposite each inner surface of a substrate 2 facing it, through the sealing member 3, and in which an electrooptical material 6 intervenes in the inner space, a circumferential gap maintaining member 5 is provided near the side of the sealing member 3. The gap maintaining member 5 is provided by a photoresist, dry etching or development, or joining or plotting, after being deposited on either one of the substrates. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

【０００１】
【発明の属する技術分野】
本発明は、表示装置とその製造方法に関し、特に電気光学材料を用いる表示装置とその製造方法に関する。
【０００２】
【従来の技術】
周知のように、液晶を用いる表示装置は、ガラス基板、石英基板等からなる２枚の基板間に液晶を封入して構成されており、一方の基板に、例えば薄膜トランジスタ（ＴｈｉｎＦｉｌｍＴｒａｎｓｉｓｔｏｒ、以下、ＴＦＴと称す）をマトリクス状に配置し、他方の基板に対向電極を配置して、両基板間に封止した液晶層の光学特性を画像信号に応じて変化させることで、画像表示を可能としている。
【０００３】
また、ＴＦＴを配置したＴＦＴ基板と、このＴＦＴ基板に相対して配置される対向基板とは、別々に製造され、その後、パネル組立工程において高精度（例えばアライメント誤差１μ以内）に貼り合わされる。この両基板間に液晶を介在させるには、パネル組立工程において、両基板を規定の間隔で高精度に貼り合わせた後、切欠部から両基板間に液晶が封入される方式や、一方の基板の周縁部にシール材を描画し、該基板のシール材で囲まれた面上に液晶を規定量滴下した後、他方の基板を高精度に貼り合わせる方式（以下、液晶滴下方式と称す）等がある。
【０００４】
ここで、このパネル組立工程を詳しく説明すると、先ず、夫々製造されたＴＦＴ基板と対向基板の、液晶層と接する面上に、液晶分子を基板面に沿って配向させるための配向膜を形成する。この配向膜は、例えばポリイミドを約数十ナノメータの厚さで印刷することにより形成される。その後、焼成を行い、さらに、電圧無印加時の液晶分子の配列を決定させるためのラビング処理を施す。
【０００５】
次いで、液晶封入方式の場合には、ＴＦＴ基板と対向基板とを対向させ、一方の基板上の周縁に接着剤となるシール材を描画し、このシール材を用いてＴＦＴ基板と対向基板を貼り合わせ、アライメントを施しながら圧着硬化させ、その後シール材の一部に設けられた切り欠きを介して液晶を封入するといった手法が用いられている。
【０００６】
一方、液晶滴下方式の場合には、上述したラビング処理後のＴＦＴ基板または対向基板上の周縁に、接着剤となるシール材を規定の高さ描画し、このシール材の内側の基板上に、規定量の液晶を滴下して、その後他方の基板を、シール材が描画された基板に対向して貼り合わせ、アライメントを施しながら圧着硬化させるといった手法が用いられている。尚、液晶滴下方式は、必要な真空下で行われ気泡混入を防止している。
【０００７】
ところで、上述した液晶滴下方式のパネル組立工程において、両基板間に液晶を封入する際、上記シール材は未硬化の状態である。
【０００８】
よって、未硬化のシール材と、液晶が接触することにより、前記液晶中にシール材の成分が溶出、拡散してしまい、上記液晶パネル周辺に、しみ及びムラ等が発生し、品質を劣化させ、信頼性を損うといった問題があった。
【０００９】
また、両基板の貼り合わせは、上記シール材のみによる一層構造となっているため、外部からのストレス等により、両基板間の距離（以下、セル厚と称す）が変化しやすいといった問題があった。
【００１０】
上記問題に鑑みて、例えば特許文献１には、シール材のうち、液晶に接触する一部のみを仮硬化させ、その後、液晶を注入することにより、未硬化のシール材と液晶の接触を回避するようにした表示装置が開示されている。
【００１１】
また、特許文献２には、両基板間に、シール材を２層描画することにより、外部からのストレス等による上記セル厚の変化に耐えうる表示装置が開示されている。
【００１２】
【特許文献１】
特開平５−２６５０１２号公報
【００１３】
【特許文献２】
特開平１１−６４８６２号公報
【００１４】
【発明が解決しようとする課題】
ところが、上記特許文献１に開示されている表示装置においては、シール材の一部を両基板を貼り合わせる前に仮硬化させてしまうため、ＴＦＴ基板と対向基板を貼り合わせる際、シール材がつぶれにくく、上記セル厚を規定の厚みにすることが難しくなるといった問題がある。
【００１５】
また、上記特許文献２に開示されている表示装置においては、外部等のストレスによる対策として、２層のシール材を描画しているが、シール材で上記セル厚を高精度に規定することは難しい。
【００１６】
本発明は、上記問題点に着目してなされたものであり、その第１の目的は、パネル組立工程において、未硬化のシール材と液晶が接触することなく、液晶パネルを組み立てることができる表示装置とその製造方法を提供することにある。また、第２の目的は、外部ストレスによるセル厚の変化を防止した表示装置とその製造方法を提供することにある。
【００１７】
【課題を解決するための手段、及び作用】
本発明に係る表示装置は、素子基板と、それに対向する基板の各内面をシール材を介して対向配置させ、内部空間内に電気光学材料を介在させた表示装置において、上記シール材の側近に間隙保持材を設けたことを特徴とする。
【００１８】
本発明の表示装置によれば、両基板間に周状の間隙保持材を設けたことにより、セル厚を高精度に規定することができ、また、未硬化のシール材と液晶が接触することがないので、パネル周辺に、シミ及びムラ等が発生するのを防止することができるという効果を有する。
【００１９】
また、本発明の表示装置は、上記間隙保持材は、どちらか一方の上記基板に成膜後、フォトレジスト、ドライエッチング又は現像、若しくは接合、あるいは描画により設けることを特徴とする。
【００２０】
この表示装置によれば、間隙保持材は、どちらか一方の上記基板に成膜後、フォトレジスト、ドライエッチング又は現像、若しくは接合、あるいは描画により形成するので、前記間隙保持材の高さを高精度に規定することができるという効果を有する。
【００２１】
本発明の表示装置の一つの態様としては、素子基板と、それに対向する基板のどちらか一方の基板の周縁部に、周状にシール材を配設し、このシール材に囲まれた内部空間内に、電気光学材料を滴下方式により介在させ、他方の基板を上記シール材に圧着させた表示装置において、上記シール材の電気光学材料と接する側の内周部に、間隙保持材を周状に形成したことを特徴とする。
【００２２】
また、本発明の表示装置は、上記間隙保持材は、上記内部空間内に封入される電気光学材料と相溶性の無い物質で構成されていることを特徴とする。
【００２３】
さらに、本発明の表示装置は、上記間隙保持材は、上記シール材が上記電気光学材料内に溶出するのを防止するために、上記シール材の電気光学材料に当接する面を覆うように連続的、かつ周状に形成されていることを特徴とする。
【００２４】
本発明の表示装置によれば、両基板間の内部空間内に、電気光学材料を滴下方式により封入して形成する表示装置において、シール材の電気光学材料と接する側の内周部に、前記電気光学材料と相溶性の無い間隙保持材を前記シール材の電気光学材料に当接する面を覆うように連続的、かつ周状に形成したので、未硬化のシール材と電気光学材料が接触するのを防止することができ、未硬化のシール材が電気光学材料中に溶出、拡散するのを防ぐことができるという効果を有する。
【００２５】
また、本発明の表示装置の一つの態様としては、上記間隙保持材は、上記両基板間の距離を規定することを特徴とする。
【００２６】
この表示装置によれば、両基板間の距離を間隙保持材により規定することで、セル厚を高精度に規定することができるという効果を有する。
【００２７】
本発明の表示装置の一つの態様としては、素子基板と、それに対向する基板のどちらか一方の基板の周縁部に、周状に描画されたシール材を介して対向配置された両基板間の内部空間内に、電気光学材料を封入して形成された表示装置において、上記両基板間の内部空間内に間隙保持材を設けたことを特徴とする。
【００２８】
また、本発明の表示装置は、上記間隙保持材は、上記両基板間の距離を規定することを特徴とする。
【００２９】
本発明の表示装置によれば、両基板間の内部空間内に間隙保持材を設け、これにより、両基板間の距離を間隙保持材により規定することで、セル厚を高精度に設定することができるという効果を有する。
【００３０】
さらに、本発明の表示装置は、上記間隙保持材は、上記両基板間に周状に形成されていることを特徴とする。
【００３１】
この表示装置によれば、間隙保持材は、上記両基板間に周状に形成されるので、外部からのストレスが液晶パネルに加えられても、セル厚が変化しないという効果を有する。
【００３２】
本発明に係る表示装置の製造方法は、素子基板と、それに対向する基板の各内面をシール材を介して対向配置させ、内部空間内に電気光学材料を介在させて形成する表示装置の製造方法において、上記シール材の側近に間隙保持材を配設する工程を有することを特徴とする。
【００３３】
本発明の表示装置の製造方法によれば、シール材の側近に間隙保持材を配設する工程を有しているので、セル厚を規定の厚さに高精度に設定することができ、また、未硬化のシール材と液晶が接触することを防止することができるという効果を有する。
【００３４】
また、本発明の表示装置の製造方法の一つの態様としては、素子基板と、それに対向する基板の各内面をシール材を介して対向配置させ、内部空間内に電気光学材料を介在させて形成する表示装置の製造方法において、上記基板のどちらか一方に、間隙保持材を規定の高さ、かつ連続的な周状に形成する工程と、上記間隙保持材が形成された基板に、前記間隙保持材の外周部に上記シール材を前記間隙保持材よりも厚く描画する工程と、上記間隙保持材及び上記シール材が形成された基板上に、滴下方式により、前記間隙保持材の内周部内に規定量の電気光学材料を滴下する工程と、上記間隙保持材及び上記シール材が形成され、電気光学材料の滴下された基板に、他方の基板を、上記シール材を押しつぶしながら上記間隙保持材の高さまで押圧して貼り合わせる工程と、上記貼り合わせ工程後、熱及び光の照射により、上記シール材を硬化させる工程とを具備することを特徴とする。
【００３５】
本発明の表示装置の製造方法によれば、未硬化のシール材と電気光学材料が接触するのを防止することができ、このため、未硬化のシール材が、電気光学材料中に溶出、拡散するのを防ぐことができるという効果を有する。
【００３６】
さらに、本発明の表示装置の製造方法の一つの態様としては、素子基板と、それに対向する基板の各内面をシール材を介して対向配置させ、内部空間内に電気光学材料を介在させて形成する表示装置の製造方法において、上記基板のどちらか一方に、間隙保持材を規定の高さ、かつ周状に形成する工程と、上記間隙保持材が形成された基板に、上記シール材を前記間隙保持材よりも厚く描画する工程と、上記間隙保持材及び上記シール材が形成された基板に、他方の基板を、上記シール材を押しつぶしながら上記間隙保持材の高さまで押圧して貼り合わせる工程と、上記両基板間に、電気光学材料を封入する工程と、上記封入工程後、熱及び光の照射により、上記シール材を硬化させる工程とを具備することを特徴とする。
【００３７】
本発明の表示装置の製造方法によれば、両基板間の内部空間内に間隙保持材を規定の高さ、かつ周状に形成する工程を有しているので、両基板間の厚みを間隙保持材により規定することで、セル厚を高精度に設定することができるという効果を有する。
【００３８】
【発明の実施の形態】
以下、図面を参照して本発明の実施の形態を説明する。尚、本実施の形態においては、液晶パネルを用いた表示装置を例に挙げて説明する。また、表示装置に用いる電気光学材料は、液晶を例に挙げ、さらに素子基板は、ＴＦＴ基板を例に挙げて説明する。
【００３９】
図１は、本発明の第１実施の形態を示す表示装置の構成を示す縦断面図、図２は、図１の表示装置におけるＴＦＴ基板の平面図である。
【００４０】
図１に示すように、表示装置１０は、液晶６と接する面に配向膜１ａが成膜されたＴＦＴ基板１と、液晶６と接する面に配向膜２ａが成膜されたＴＦＴ基板１に対向する基板（対向基板）２と、ＴＦＴ基板１及び対向基板２の両端部で両基板を接合するシール材３と、ＴＦＴ基板１及び対向基板２を電気的に導通させる上下導通材４と、間隙保持材５と、両基板間の内部空間内に封入された液晶６を有して構成されている。
【００４１】
上記シール材３、上記上下導通材４、上記間隙保持材５は、図２に示すように、例えばＴＦＴ基板１に形成されている。即ち、ＴＦＴ基板１の液晶６と接する面（以下、内面と称す）には、周縁部に周状に描画されたシール材３と、該シール材３の４隅に形成された上下導通材４と、シール材３の側近、つまりシール材３の液晶６と接する側の内周部に、シール材３の内周面を覆うように周状、かつ連続的に設けられた間隙保持材５とがそれぞれ配設されている。そして、ＴＦＴ基板１の内面で、上記間隙保持材５により周状に囲まれた領域には、配向膜１ａが成膜されている。
【００４２】
上記間隙保持材５は、表示装置の組立工程において、未硬化のシール材３と液晶６が接触しないように両者間に配設され、これにより、未硬化のシール材３が液晶６中に溶出、拡散するのを防ぐ役目と、ＴＦＴ基板１に対向基板２を貼り合わせる際、セル厚を高精度に規定する役目をするためのものである。
【００４３】
次に、このように構成される表示装置１０の製造方法を、以下、図面を参照して説明する。
【００４４】
図３乃至図１０は、図１に示す表示装置１０の製造方法を示したフローチャート、及び工程図（部分縦断面図）であり、このうち、図３、図４は、上記間隙保持材５（図１参照）に感光性材料を用いた例であり、図５、図６は、上記間隙保持材５に無機絶縁材料を用いた例であり、図７、図８は、上記間隙保持材５にシール材を用いた例であり、図９、図１０は、上記間隙保持材５の他の形成方法を示した図である。
【００４５】
先ず、図３、図４を参照にして、間隙保持材５に感光性材料を用いた表示装置１０の製造方法を説明する。
【００４６】
図３に示すように、ＴＦＴ基板１と対向基板２（いずれも図１参照）とは、前述したように別々に製造される。先ず、ＴＦＴ基板１は、ステップＳ１で既知の成膜工程を経て透明電極が形成されたＴＦＴ基板１（図４−ａ）に、続くステップＳ２で、該ＴＦＴ基板１の内面に、感光性ポリイミド等の有機絶縁材料１１を、例えば３μｍ〜５μｍの高さに成膜して（図４−ｂ）、ステップＳ３に移行する。尚、上記感光性ポリイミド１１は、図１の間隙保持材５に相当するものである。
【００４７】
ステップＳ３では、ステップＳ２で成膜した感光性ポリイミド１１を、例えば現像により、例えば幅１００μｍ〜２ｍｍで連続的に周状となるようにパターンニング（図４−ｃ）して、ステップＳ４に移行する。上記感光性ポリイミド１１の周囲、高さは、該感光性ポリイミド１１によって囲まれる範囲に滴下される液晶の体積によって規定される。
【００４８】
ステップＳ４では、ＴＦＴ基板１の内面、かつ上記ステップＳ３においてパターンニングされた感光性ポリイミド１１によって囲まれた範囲に配向膜１ａを約数十ナノメータの厚さで形成して（図４―ｄ）ステップＳ５に移行する。ステップＳ５では、ステップＳ４で形成された配向膜１ａに、表示装置１０の電圧無印加時の液晶分子の配列を決定させるためのラビング処理を施してステップＳ６に移行し、さらにステップＳ６では、上記ラビング処理によって生じた塵埃を除去するための洗浄を行ってステップＳ７に移行する。
【００４９】
ステップＳ７では、ＴＦＴ基板１及び対向基板２を貼り合わせるための接着剤の役割をするシール材３を、ＴＦＴ基板１の内面、かつ上記感光性ポリイミド１１の外周に、例えば９μｍ〜１５μｍの高さで描画して（図４−ｅ）、ステップＳ８に移行し、ステップＳ８では、ＴＦＴ基板１の表面、かつシール材３の４隅に、ＴＦＴ基板１及び対向基板２を電気的に導通させる上下導通材４を塗布して（図４−ｆ）（図２参照）ステップＳ９に移行する。
【００５０】
ステップＳ９では、ＴＦＴ基板１を真空雰囲気下に移動させてステップＳ１０に移行し、ステップＳ１０で、既知の液晶滴下方式により、規定量の液晶６を、配向膜１ａの上面、かつ感光性ポリイミド１１によって囲まれた範囲に滴下して（図４−ｇ）ステップＳ１６に移行する。ここで、真空下において、液晶を滴下するのは、液晶滴下中に気泡が紛れ込むのを防止するためである。また、このように、感光性ポリイミド１１によって囲まれた範囲に規定量の液晶６を滴下しているため、ステップＳ７において、描画した未硬化のシール材３と、液晶６が接触することがない。
【００５１】
一方、対向基板２は、ステップＳ１１で既知の成膜工程を経て共通電極が形成された対向基板２に、続くステップＳ１２で、該対向基板２の内面に、配向膜２ａを約数十ナノメータの厚さで形成してステップＳ１３に移行し、ステップＳ１３では、ステップＳ１２で形成された配向膜２ａに、表示装置１０の電圧無印加時の液晶分子の配列を決定させるためのラビング処理を施してステップＳ１４に移行し、さらにステップＳ１４では、上記ラビング処理によって生じた塵埃を除去するための洗浄を行ってステップＳ１５に移行し、ステップＳ１５では、対向基板２を真空雰囲気下に移動させてステップＳ１６に移行する。
【００５２】
ステップＳ１６では、上述したように形成されたＴＦＴ基板１及び対向基板２を貼り合わせて（図４―ｈ）、ステップＳ１７に移行する。
【００５３】
ステップＳ１７では、ＴＦＴ基板１に貼り合わせた対向基板２の内面をアライメントを保ちながら（例えばアライメント誤差１μ以内）圧着して、ステップＳ１８に移行する。このとき、対向基板２を、ＴＦＴ基板１に描画された未硬化のシール材３を押しつぶすように押圧し、同じくＴＦＴ基板１に描画された感光性ポリイミド１１の高さ位置まで貼り合わせる。このように貼り合わせれば、表示装置１０のセル厚は、感光性ポリイミド１１の高さによって規定することができるため、上記セル厚を高精度に設定することができる。
【００５４】
ステップＳ１８では、シール材３に例えばＵＶを照射して、シール材を硬化させて（図４−ｉ）ステップＳ１９に移行し、最後にステップＳ１９では、大気圧に開放して、表示装置１０の組立は完了する。
【００５５】
次に、間隙保持材５に、無機絶縁材料を用いた場合の表示装置１０の製造方法について、図５、図６を用いて説明する。この無機絶縁材料を用いた場合の表示装置１０の製造方法は、上述した図３、図４で示した表示装置の製造方法と殆ど同じであり、間隙保持材に感光性ポリイミドの代わりに無機絶縁材料を用いた点のみが異なる。よって、この相違点のみを説明し、図３、図４で説明した製造方法と同様の製造工程には、同じ符号を付し、その説明を省略する。
【００５６】
図５、図６に示すように、先ず、ＴＦＴ基板１は、ステップＳ１で既知の成膜工程を経て透明電極が形成されたＴＦＴ基板１（図６−ａ）に、続くステップＳ２２で、該ＴＦＴ基板１の内面に、ＳｉＯ２等の無機絶縁材料２１を、例えば３μｍ〜５μｍの高さに成膜して（図６−ｂ）、ステップＳ２３に移行する。尚、上記無機絶縁材料２１は、図１の間隙保持材５に相当するものである。
【００５７】
ステップＳ２３では、ステップＳ２２で成膜した無機絶縁材料２１を、例えばドライエッチングにより、例えば幅１００μｍ〜２ｍｍで連続的に周状となるようにパターンニング（図６−ｃ）して、ステップＳ４に移行する。尚、上記無機絶縁材料２１の周囲、高さは、該無機絶縁材料２１によって囲まれる範囲に滴下される液晶の体積によって規定される。
【００５８】
これ以下の製造工程は、上述の図３、図４の製造工程と同じである。
【００５９】
このように間隙保持材５を、ＳｉＯ２等の無機絶縁材料２１をドライエッチングにより形成しても良い。
【００６０】
次に、間隙保持材５に、シール材を用いた場合の表示装置１０の製造方法について、図７、図８を用いて説明する。このシール材を用いた場合の表示装置１０の製造方法は、上述した図３、図４で示した製造方法と殆ど同じであり、間隙保持材に感光性ポリイミドの代わりにシール材を用いた点のみが異なる。よって、この相違点のみを説明し、図３、図４で説明した製造方法と同様の製造工程には、同じ符号を付し、その説明を省略する。
【００６１】
図７に示すように、ＴＦＴ基板１と対向基板２（いずれも図１参照）とは、別々に製造される。先ず、ＴＦＴ基板１では、ステップＳ３１で既知の成膜工程を経て透明電極が形成されたＴＦＴ基板１（図８−ａ）に、続くステップＳ３２で、ＴＦＴ基板１の内面に配向膜１ａを約数十ナノメータの厚さで形成して（図８―ｂ）ステップＳ３３に移行し、ステップＳ３３では、ステップＳ３２で形成された配向膜１ａに、表示装置１０の電圧無印加時における液晶分子の配列を決定させるためのラビング処理を施してステップＳ３４に移行し、さらにステップＳ３４では、上記ラビング処理によって生じた塵埃を除去するための洗浄を行ってステップＳ３５に移行する。
【００６２】
ステップＳ３５では、該ＴＦＴ基板１の内面に、第１のシール材３１を、例えば３μｍ〜５μｍの高さに描画して（図８−ｃ）、ステップＳ３６に移行する。尚、上記第１のシール材３１は、図１の間隙保持材５に相当するものである。また、第１のシール材３１の周囲、高さは、該第１のシール材３１によって囲まれる範囲に滴下される液晶の体積によって規定される。
【００６３】
ステップＳ３６では、第１のシール材３１にＵＶ光を照射して、第１のシール材３１を硬化させ（図８−ｄ）、ステップＳ３７に移行し、ステップＳ３７では、ＴＦＴ基板１及び対向基板２を貼り合わせるための接着剤の役割をする第２のシール材３を、ＴＦＴ基板１の内面、かつ第１のシール材３１の外周に、例えば９μｍ〜１５μｍの高さで描画して（図８−ｅ）（図２参照）ステップＳ８に移行する。
【００６４】
これ以下の製造工程は、前述の図３、図４の製造工程と同じである。
【００６５】
このように、間隙保持材５を、第１のシール材３１をＵＶ光で硬化させて形成しても良い。
【００６６】
次に、間隙保持材５を接合により形成した場合の表示装置１０の製造方法について、図９、図１０を用いて説明する。この場合の表示装置１０の製造方法は、上述した図３、図４で示した製造方法と殆ど同じであり、間隙保持材の配設手段を現像による手段の代わりに接合による手段を用いた点のみが異なる。よって、この相違点のみを説明し、図３、図４で説明した製造方法と同様の製造工程には、同じ符号を付し、その説明を省略する。
【００６７】
図９に示すように、ＴＦＴ基板１と対向基板２（いずれも図１参照）とは、上述したように別々に製造される。先ず、ＴＦＴ基板１は、ステップＳ１で既知の成膜工程を経て透明電極が形成されたＴＦＴ基板１（図１０−ａ）に、続くステップＳ４２で、該ＴＦＴ基板１の内面に、樹脂、ＳｉＯ２等の無機材料４１を、例えば３μｍ〜５μｍの高さに接着・ホットプレス等の手法で接合する（図１０−ｂ）。
【００６８】
これ以下の製造工程は、前述の図３、図４のステップＳ４以下の工程と同様である。尚、上記樹脂、ＳｉＯ２等の無機材料４１は、図１の間隙保持材５に相当するものである。
【００６９】
このように、間隙保持材５を、ＴＦＴ基板１に、接着・ホットプレス等の手法で接合して形成しても良い。
【００７０】
以上述べたように、本発明の第１実施の形態における表示装置とその製造方法においては、ＴＦＴ基板１と対向基板２の貼り合わせ工程において、シール材３の液晶６と接する側の内周部に、シール材３の内周面を覆うように周状、かつ連続的に間隙保持材５を設けたことにより、未硬化のシール材３と液晶６が接触することがないので、未硬化のシール材３が、液晶６中に溶出、拡散するのを防ぐことができる。
【００７１】
また、ＴＦＴ基板１に、予め所定の高さに規定してある間隙保持材５を設けたことにより、ＴＦＴ基板１に、対向基板２を貼り合わせる際、セル厚が間隙保持材５により規定されるため、セル厚を高精度に設定することができる。
【００７２】
尚、本実施の形態においては、上記シール材３、上記上下導通材４、上記間隙保持材５は、ＴＦＴ基板１側に形成したが、これに限らず、対向基板２側に形成しても同様の効果が得られる。
【００７３】
更に、上記シール材３、または第１のシール材３１は、ＵＶ光により硬化されるとしたが、熱により硬化しても良いことは勿論である。
【００７４】
更にまた、上記間隙保持材には、感光性ポリイミド等の有機絶縁材料、樹脂またはＳｉＯ２等の無機絶縁材料、シール材等を用いた例を示したが、これに限らず、液晶と相溶性が無く、液晶パネルに悪影響を及ぼさないものであれば、どのようなものを用いても良いことは云うまでもない。
【００７５】
また、ＴＦＴのスイッチング素子を用いた表示装置とその製造方法について示したが、これに限らずＴＦＤのスイッチング素子を用いたアクティブマトリクス表示装置や、パッシブ型の液晶表示装置や、電子ペーパ等の電気泳動装置等に適用しても良い。
【００７６】
図１１は、本発明の第２実施の形態を示す表示装置の縦断面図、図１２は、図１１の表示装置におけるＴＦＴ基板の平面図である。
【００７７】
この第２実施の形態の表示装置とその製造方法は、前記図１乃至図１０に示した表示装置の構成とその製造方法と殆ど同じであるが、前記間隙保持材を連続的に形成しない点、または、ＴＦＴ基板、対向基板の液晶に接する面であれば、どこに形成しても良い点、若しくは、間隙保持材に、シール材を用いない点のみが異なる。よって、この相違点のみを説明し、第１実施形態の表示装置とその製造方法と同様の構成及び製造方法には、同じ符号を付し、その説明は省略する。
【００７８】
図１１に示すように、表示装置１００は、内面に配向膜１ａが成膜されたＴＦＴ基板１と、内面に配向膜２ａが成膜された対向基板２と、ＴＦＴ基板１及び対向基板２の両端部で両基板を接合するシール材３と、ＴＦＴ基板１及び対向基板２を電気的に導通させる上下導通材４と、間隙保持材５０と、両基板間の内部空間内に封入された液晶６を有して構成されている。
【００７９】
上記シール材３、上記上下導通材４、上記間隙保持材５０は、図１２に示すように、例えばＴＦＴ基板１に形成されている。ＴＦＴ基板１の内面には、その周縁部に周状に描画されたシール材３と、該シール材３の４隅に形成された上下導通材４と、シール材３の液晶６と接する側の内周部の複数箇所に不連続的に設けられた間隙保持材５０と、ＴＦＴ基板１の内面、かつシール材３及び間隙保持材５０により囲まれた領域に形成された配向膜１ａがそれぞれ配設されている。
【００８０】
上記間隙保持材５０は、表示装置１００の組立工程において、ＴＦＴ基板１に、対向基板２を貼り合わせる際、セル厚を高精度に規定するためのものである。尚、この間隙保持材５０の配設手段は、上述した第１実施の形態に示した種々の手段が用いられる。
【００８１】
このように構成された本発明の第２実施の形態における表示装置とその製造方法においては、ＴＦＴ基板１に、予め所定の高さに規定してある間隙保持材５０を配設したことにより、ＴＦＴ基板１に、対向基板２を貼り合わせる際、セル厚が間隙保持材５０により規定されるため、セル厚を高精度に設定することができる。
【００８２】
尚、本実施の形態においては、上記シール材３、上記上下導通材４、上記間隙保持材５は、ＴＦＴ基板１側に形成したが、これに限らず、対向基板に形成しても同様の効果が得られる。
【００８３】
また、上記シール材３は、ＵＶ光または熱により硬化される。さらに、上記間隙保持材５０は、シール材３の液晶６と接する側の内周部に、不連続的に複数箇所に配設したが、これに限らず、連続的に配設しても良く、また図１３に示すように、シール材３の外周部側に配設しても良く、結果的に、セル厚を高精度に規定することができれば、どの箇所に、どのような形状で、どのように配設しても良いことは云うまでもない。
【００８４】
また、本実施の形態においては、表示装置１００における液晶６の注入は、液晶滴下方式に限らず、パネル組立工程においてＴＦＴ基板１と対向基板２をシール材を介して高精度に貼り合わされた後、前記シール材に設けられた切り欠きから液晶を封入する方式を適用しても同様の効果が得られることは勿論である。
【００８５】
さらに、上記間隙保持材には、感光性ポリイミド等の有機絶縁材料、樹脂またはＳｉＯ２等の無機絶縁材料等を用いたが、これに限らず、セル厚を高精度に規定することができるものであれば、どのようなものを用いても良いことは云うまでもない。
【００８６】
さらに、ＴＦＴのスイッチング素子を用いた表示装置とその製造方法について示したが、これに限らずＴＦＤのスイッチング素子を用いたアクティブマトリクス表示装置や、パッシブ型の液晶表示装置や、電子ペーパ等の電気泳動装置等に適用しても良い。
【図面の簡単な説明】
【図１】本発明の第１実施の形態を示す表示装置の縦断面図。
【図２】図１の表示装置におけるＴＦＴ基板の平面図。
【図３】表示装置の製造方法において、間隙保持材に感光性材料を用いた例を示すフローチャート。
【図４】間隙保持材に感光性材料を用いた場合の製造工程図。
【図５】表示装置の製造方法において、間隙保持材に無機絶縁材料を用いた例を示すフローチャート。
【図６】間隙保持材に無機絶縁材料を用いた場合の製造工程図。
【図７】表示装置の製造方法において、間隙保持材にシール材を用いた例を示すフローチャート。
【図８】間隙保持材にシール材を用いた場合の製造工程図。
【図９】表示装置の製造方法において、間隙保持材を接合により形成した例を示すフローチャート。
【図１０】間隙保持材を接合により形成した場合の製造工程図。
【図１１】本発明の第２実施の形態を示す表示装置の縦断面図。
【図１２】図１１の表示装置におけるＴＦＴ基板の平面図。
【図１３】本発明の第２実施の形態を示す表示装置におけるＴＦＴ基板の変形例を示す平面図。
【符号の説明】
１…ＴＦＴ基板（素子基板）
２…対向基板
３…シール材（第２のシール材）
５，５０…間隙保持材
６…液晶（電気光学材料）
１０，１００…表示装置
１１…感光性ポリイミド（間隙保持材）
２１，４１…無機絶縁材料（樹脂、ＳｉＯ２）（間隙保持材）
３１…第１のシール材（間隙保持材）[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a display device and a method for manufacturing the same, and more particularly, to a display device using an electro-optical material and a method for manufacturing the same.
[0002]
[Prior art]
As is well known, a display device using liquid crystal is configured by sealing liquid crystal between two substrates such as a glass substrate and a quartz substrate, and a thin film transistor (Thin Film Transistor, hereinafter, referred to as TFTs) are arranged in a matrix, counter electrodes are arranged on the other substrate, and the optical characteristics of the liquid crystal layer sealed between the two substrates are changed according to image signals, thereby enabling image display. I have.
[0003]
Further, the TFT substrate on which the TFT is arranged and the opposing substrate arranged opposite to the TFT substrate are manufactured separately, and thereafter, are bonded with high precision (for example, alignment error within 1 μm) in a panel assembling process. In order to interpose liquid crystal between these two substrates, in the panel assembly process, after bonding both substrates at a specified interval with high precision, the liquid crystal is sealed between the two substrates from the notch, or one of the substrates A method of drawing a sealing material on the periphery of the substrate, dropping a predetermined amount of liquid crystal on the surface of the substrate surrounded by the sealing material, and then bonding the other substrate with high accuracy (hereinafter, referred to as a liquid crystal dropping method), etc. There is.
[0004]
Here, the panel assembling process will be described in detail. First, an alignment film for aligning liquid crystal molecules along the substrate surface is formed on the surfaces of the manufactured TFT substrate and the counter substrate that are in contact with the liquid crystal layer. . This alignment film is formed, for example, by printing polyimide with a thickness of about several tens of nanometers. After that, baking is performed, and further, a rubbing treatment is performed to determine the arrangement of the liquid crystal molecules when no voltage is applied.
[0005]
Next, in the case of the liquid crystal sealing method, the TFT substrate and the opposing substrate are opposed to each other, a seal material serving as an adhesive is drawn on the periphery of one of the substrates, and the TFT substrate and the opposing substrate are attached using this seal material. A technique is used in which alignment and alignment are performed, pressure-hardening is performed, and then liquid crystal is sealed through a notch provided in a part of the sealing material.
[0006]
On the other hand, in the case of the liquid crystal dropping method, a sealing material serving as an adhesive is drawn on the periphery of the TFT substrate or the opposing substrate after the rubbing treatment as described above at a specified height, and on the substrate inside the sealing material, A method has been used in which a prescribed amount of liquid crystal is dropped, and then the other substrate is bonded to the substrate on which the sealing material is drawn, and is adhered and cured by pressure while performing alignment. The liquid crystal dropping method is performed under a necessary vacuum to prevent air bubbles from being mixed.
[0007]
By the way, in the liquid crystal dropping type panel assembling process, when sealing liquid crystal between both substrates, the sealing material is in an uncured state.
[0008]
Therefore, when the liquid crystal comes into contact with the uncured sealing material, the components of the sealing material are eluted and diffused in the liquid crystal, and spots and unevenness are generated around the liquid crystal panel, thereby deteriorating the quality. However, there is a problem that the reliability is impaired.
[0009]
In addition, since the two substrates are bonded to each other in a single-layer structure using only the sealing material, there is a problem that the distance between the two substrates (hereinafter, referred to as a cell thickness) is likely to change due to external stress or the like. Was.
[0010]
In view of the above problem, for example, in Patent Document 1, only a part of the sealing material that comes into contact with the liquid crystal is temporarily cured, and then the liquid crystal is injected to avoid contact between the uncured sealing material and the liquid crystal. A display device adapted to perform the above-described operation is disclosed.
[0011]
Patent Document 2 discloses a display device that can withstand the above-described change in cell thickness due to external stress or the like by drawing two layers of a sealant between both substrates.
[0012]
[Patent Document 1]
JP-A-5-265012
[0013]
[Patent Document 2]
JP-A-11-64862
[0014]
[Problems to be solved by the invention]
However, in the display device disclosed in Patent Document 1, since a part of the sealing material is temporarily cured before bonding the two substrates, the sealing material is crushed when the TFT substrate and the counter substrate are bonded. However, there is a problem that it is difficult to make the cell thickness a specified thickness.
[0015]
Further, in the display device disclosed in Patent Document 2 described above, a two-layer sealing material is drawn as a measure against stress from the outside or the like. However, it is not possible to precisely define the cell thickness with the sealing material. difficult.
[0016]
The present invention has been made in view of the above problems, and a first object of the present invention is to provide a display capable of assembling a liquid crystal panel without a liquid crystal coming into contact with an uncured sealing material in a panel assembling process. An object of the present invention is to provide an apparatus and a method of manufacturing the same. A second object is to provide a display device in which a change in cell thickness due to external stress is prevented and a method for manufacturing the same.
[0017]
Means and Action for Solving the Problems
In the display device according to the present invention, the element substrate and the respective inner surfaces of the substrate facing the element substrate are arranged to face each other with a seal material interposed therebetween, and in a display device in which an electro-optical material is interposed in the internal space, It is characterized in that a gap holding material is provided.
[0018]
According to the display device of the present invention, by providing the circumferential gap holding material between the two substrates, the cell thickness can be defined with high accuracy, and the uncured sealing material and the liquid crystal come into contact with each other. Therefore, the present invention has an effect that it is possible to prevent spots and unevenness from being generated around the panel.
[0019]
Further, the display device of the present invention is characterized in that the gap holding material is provided by forming a film on one of the substrates and then performing photoresist, dry etching or development, bonding, or drawing.
[0020]
According to this display device, since the gap holding material is formed by photoresist, dry etching or development, or bonding, or drawing after forming the film on one of the substrates, the height of the gap holding material is increased. This has the effect that the accuracy can be specified.
[0021]
As one mode of the display device of the present invention, a sealing material is circumferentially provided on a peripheral portion of one of the element substrate and the substrate facing the element substrate, and an internal space surrounded by the sealing material is provided. In a display device in which an electro-optical material is interposed by a dropping method and the other substrate is pressed against the sealing material, a gap holding material is formed on an inner peripheral portion of the sealing material on a side in contact with the electro-optic material. It is characterized by being formed in.
[0022]
Further, the display device of the present invention is characterized in that the gap holding material is made of a substance that is incompatible with the electro-optical material sealed in the internal space.
[0023]
Further, in the display device of the present invention, in order to prevent the sealing material from being eluted into the electro-optical material, the gap holding material may be continuous so as to cover a surface of the sealing material that contacts the electro-optical material. It is characterized in that it is formed in a targeted and circumferential shape.
[0024]
According to the display device of the present invention, in the display device formed by sealing the electro-optical material by a dropping method in the internal space between the two substrates, the inner peripheral portion of the sealing material on the side in contact with the electro-optical material includes: Since the gap holding material that is incompatible with the electro-optic material is formed continuously and circumferentially so as to cover the surface of the sealing material that contacts the electro-optic material, the uncured sealing material and the electro-optic material come into contact with each other. Is prevented, and the uncured sealing material can be prevented from being eluted and diffused into the electro-optical material.
[0025]
In one aspect of the display device of the present invention, the gap holding member defines a distance between the two substrates.
[0026]
According to this display device, by defining the distance between the two substrates by the gap holding material, there is an effect that the cell thickness can be defined with high accuracy.
[0027]
As one mode of the display device of the present invention, an element substrate and a peripheral portion of one of the substrates opposed to the element substrate are disposed between the two substrates which are opposed to each other via a sealing material drawn in a peripheral shape. In a display device formed by enclosing an electro-optic material in an internal space, a gap holding material is provided in the internal space between the two substrates.
[0028]
Further, in the display device according to the present invention, the gap holding member defines a distance between the two substrates.
[0029]
According to the display device of the present invention, a gap holding material is provided in the internal space between the two substrates, whereby the distance between the two substrates is defined by the gap holding material, whereby the cell thickness can be set with high accuracy. It has the effect of being able to.
[0030]
Further, the display device of the present invention is characterized in that the gap holding material is formed circumferentially between the two substrates.
[0031]
According to this display device, since the gap holding member is formed circumferentially between the two substrates, there is an effect that the cell thickness does not change even when an external stress is applied to the liquid crystal panel.
[0032]
The method of manufacturing a display device according to the present invention is a method of manufacturing a display device in which an element substrate and each inner surface of the substrate facing the element substrate are arranged to face each other with a sealant interposed therebetween and an electro-optic material is formed in an internal space. Wherein a step of arranging a gap holding material near the seal material is provided.
[0033]
According to the manufacturing method of the display device of the present invention, since the step of arranging the gap holding material near the side of the sealing material, it is possible to set the cell thickness to a specified thickness with high accuracy, This has the effect that the liquid crystal can be prevented from contacting with the uncured sealing material.
[0034]
In one embodiment of the method for manufacturing a display device according to the present invention, the element substrate and each inner surface of the substrate facing the element substrate are arranged to face each other with a sealant interposed therebetween, and an electro-optic material is formed in the internal space. Forming a gap holding material on one of the substrates in a prescribed height, and in a continuous circumference; and forming the gap holding material on the substrate on which the gap holding material is formed. A step of drawing the seal material thicker than the gap holding material on the outer periphery of the holding material, and dropping the inner surface of the gap holding material on the substrate on which the gap holding material and the seal material are formed by a dropping method. A step of dropping a specified amount of electro-optical material onto the gap holding material and the sealing material, and forming the gap holding material on the substrate on which the electro-optic material is dropped by crushing the sealing material with the other substrate. Up to height A step of pressure by bonding, after the bonding step, by irradiation of heat and light, characterized by comprising a step of curing the sealing material.
[0035]
According to the method for manufacturing a display device of the present invention, it is possible to prevent the uncured sealing material from contacting the electro-optical material, and thus the uncured sealing material is eluted and diffused into the electro-optical material. This has the effect that it can be prevented from being performed.
[0036]
Further, as one mode of the method of manufacturing a display device of the present invention, the element substrate and the respective inner surfaces of the substrate facing the element substrate are arranged to face each other with a sealant interposed therebetween, and formed by interposing an electro-optical material in the internal space. In a method of manufacturing a display device, a step of forming a gap holding material at a prescribed height and in a circumferential shape on one of the substrates, and forming the sealing material on the substrate on which the gap holding material is formed, A step of drawing thicker than the gap holding material, and a step of pressing the other substrate to the substrate on which the gap holding material and the sealing material are formed by pressing the other substrate to the height of the gap holding material while crushing the sealing material. And a step of enclosing the electro-optical material between the two substrates, and after the enclosing step, a step of curing the sealing material by irradiation of heat and light.
[0037]
According to the method of manufacturing a display device of the present invention, since the step of forming the gap holding material in the internal space between the two substrates at a prescribed height and in a circumferential shape is provided, the thickness between the two substrates is reduced by the gap. By using the holding material, the cell thickness can be set with high accuracy.
[0038]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings. In this embodiment, a display device using a liquid crystal panel will be described as an example. In addition, a liquid crystal will be described as an example of an electro-optical material used for a display device, and a TFT substrate will be described as an example of an element substrate.
[0039]
FIG. 1 is a longitudinal sectional view showing a configuration of a display device according to a first embodiment of the present invention, and FIG. 2 is a plan view of a TFT substrate in the display device of FIG.
[0040]
As shown in FIG. 1, the display device 10 has a TFT substrate 1 having an alignment film 1a formed on a surface in contact with the liquid crystal 6, and a TFT substrate 1 having an alignment film 2a formed on a surface in contact with the liquid crystal 6. (A counter substrate) 2, a sealing material 3 for joining the two substrates at both ends of the TFT substrate 1 and the counter substrate 2, an upper and lower conductive material 4 for electrically connecting the TFT substrate 1 and the counter substrate 2, It has a holding material 5 and a liquid crystal 6 sealed in an internal space between both substrates.
[0041]
As shown in FIG. 2, the sealing material 3, the vertical conductive material 4, and the gap holding material 5 are formed on, for example, the TFT substrate 1. That is, on a surface of the TFT substrate 1 that contacts the liquid crystal 6 (hereinafter referred to as an inner surface), a sealing material 3 drawn circumferentially on a peripheral portion and an upper and lower conductive material 4 formed at four corners of the sealing material 3 are provided. And a gap holding member 5 provided circumferentially and continuously around the seal member 3, that is, on an inner peripheral portion of the seal member 3 in contact with the liquid crystal 6 so as to cover the inner peripheral surface of the seal member 3. Are arranged respectively. An alignment film 1a is formed on the inner surface of the TFT substrate 1 in a region surrounded by the gap holding material 5 in a circumferential shape.
[0042]
The gap holding material 5 is provided between the uncured sealing material 3 and the liquid crystal 6 so as not to come into contact with each other in the display device assembling process, whereby the uncured sealing material 3 is eluted into the liquid crystal 6. This serves to prevent diffusion, and to play a role in defining the cell thickness with high accuracy when the opposing substrate 2 is bonded to the TFT substrate 1.
[0043]
Next, a method for manufacturing the display device 10 configured as described above will be described below with reference to the drawings.
[0044]
3 to 10 are a flowchart and a process chart (partial longitudinal sectional view) showing a method of manufacturing the display device 10 shown in FIG. 1, and FIGS. 3 and 4 show the gap holding material 5 ( FIGS. 5 and 6 show examples in which an inorganic insulating material is used for the gap holding material 5, and FIGS. 7 and 8 show examples in which the gap holding material 5 is used. 9 and 10 are views showing another method of forming the gap holding material 5.
[0045]
First, a method of manufacturing the display device 10 using a photosensitive material for the gap holding member 5 will be described with reference to FIGS.
[0046]
As shown in FIG. 3, the TFT substrate 1 and the counter substrate 2 (both refer to FIG. 1) are manufactured separately as described above. First, the TFT substrate 1 is provided with a photosensitive polyimide on the inner surface of the TFT substrate 1 (FIG. 4-a) on which a transparent electrode is formed through a known film forming process in step S1. The organic insulating material 11 is formed into a film having a height of, for example, 3 μm to 5 μm (FIG. 4B), and the process proceeds to step S3. The photosensitive polyimide 11 corresponds to the gap holding material 5 in FIG.
[0047]
In step S3, the photosensitive polyimide 11 formed in step S2 is patterned (for example, by development) so as to have a continuous width of, for example, 100 μm to 2 mm (FIG. 4-c), and the process proceeds to step S4. I do. The circumference and height of the photosensitive polyimide 11 are defined by the volume of the liquid crystal dropped in a range surrounded by the photosensitive polyimide 11.
[0048]
In step S4, an alignment film 1a is formed with a thickness of about several tens of nanometers on the inner surface of the TFT substrate 1 and in a range surrounded by the photosensitive polyimide 11 patterned in step S3 (FIG. 4D). Move to step S5. In step S5, a rubbing process is performed on the alignment film 1a formed in step S4 to determine the arrangement of the liquid crystal molecules when no voltage is applied to the display device 10, and the process proceeds to step S6. Cleaning for removing dust generated by the rubbing process is performed, and the process proceeds to step S7.
[0049]
In step S7, a sealing material 3 serving as an adhesive for bonding the TFT substrate 1 and the counter substrate 2 is applied to the inner surface of the TFT substrate 1 and the outer periphery of the photosensitive polyimide 11, for example, with a height of 9 μm to 15 μm. (FIG. 4-e), and the process proceeds to step S8. At step S8, the upper and lower sides of the surface of the TFT substrate 1 and the four corners of the sealing material 3 are electrically connected to the TFT substrate 1 and the opposing substrate 2. The conductive material 4 is applied (FIG. 4-f) (see FIG. 2), and the process proceeds to step S9.
[0050]
In step S9, the TFT substrate 1 is moved in a vacuum atmosphere, and the process proceeds to step S10. In step S10, a predetermined amount of the liquid crystal 6 is deposited on the upper surface of the alignment film 1a and the photosensitive polyimide 11 by a known liquid crystal dropping method. (G in FIG. 4), and the process proceeds to step S16. Here, the reason why the liquid crystal is dropped under vacuum is to prevent bubbles from entering during the dropping of the liquid crystal. Since the specified amount of the liquid crystal 6 is dropped in the area surrounded by the photosensitive polyimide 11, the uncured sealing material 3 drawn in step S7 does not come into contact with the liquid crystal 6. .
[0051]
On the other hand, the opposing substrate 2 has an orientation film 2a of about several tens of nanometers on the inner surface of the opposing substrate 2 on which the common electrode has been formed through the known film forming process in step S11 and in step S12. The thickness is formed, and the process proceeds to step S13. In step S13, the alignment film 2a formed in step S12 is subjected to a rubbing process for determining the alignment of liquid crystal molecules when no voltage is applied to the display device 10. The process proceeds to step S14, and in step S14, cleaning for removing dust generated by the rubbing process is performed, and the process proceeds to step S15. In step S15, the opposing substrate 2 is moved to a vacuum atmosphere and the process proceeds to step S16. Move to
[0052]
In step S16, the TFT substrate 1 and the counter substrate 2 formed as described above are attached to each other (FIG. 4H), and the process proceeds to step S17.
[0053]
In step S17, the inner surface of the opposing substrate 2 bonded to the TFT substrate 1 is pressure-bonded while maintaining alignment (for example, within an alignment error of 1 μm), and the process proceeds to step S18. At this time, the opposing substrate 2 is pressed so as to crush the uncured sealing material 3 drawn on the TFT substrate 1, and is bonded to the height position of the photosensitive polyimide 11 drawn on the TFT substrate 1. With such bonding, the cell thickness of the display device 10 can be determined by the height of the photosensitive polyimide 11, so that the cell thickness can be set with high accuracy.
[0054]
In step S18, the sealing material 3 is irradiated with, for example, UV to cure the sealing material (FIG. 4-i), and the process proceeds to step S19. Assembly is complete.
[0055]
Next, a method of manufacturing the display device 10 when an inorganic insulating material is used for the gap holding member 5 will be described with reference to FIGS. The method of manufacturing the display device 10 using this inorganic insulating material is almost the same as the method of manufacturing the display device shown in FIGS. 3 and 4 described above. The only difference is the use of materials. Therefore, only this difference will be described, and the same steps as those in the manufacturing method described with reference to FIGS. 3 and 4 will be denoted by the same reference numerals and description thereof will be omitted.
[0056]
As shown in FIGS. 5 and 6, first, the TFT substrate 1 is formed on the TFT substrate 1 (FIG. 6A) on which the transparent electrode is formed through the known film forming process in Step S1, and then in Step S22. An inorganic insulating material 21 such as SiO 2 is formed on the inner surface of the TFT substrate 1 at a height of, for example, 3 μm to 5 μm (FIG. 6B), and the process proceeds to step S23. The inorganic insulating material 21 corresponds to the gap holding material 5 in FIG.
[0057]
In step S23, the inorganic insulating material 21 formed in step S22 is patterned by, for example, dry etching so as to have a continuous shape with a width of, for example, 100 μm to 2 mm (FIG. 6C). Transition. The circumference and height of the inorganic insulating material 21 are defined by the volume of the liquid crystal dropped in a range surrounded by the inorganic insulating material 21.
[0058]
The subsequent manufacturing steps are the same as the above-described manufacturing steps of FIGS.
[0059]
As described above, the gap holding material 5 may be formed by dry etching the inorganic insulating material 21 such as SiO2.
[0060]
Next, a method for manufacturing the display device 10 in the case where a sealing material is used for the gap holding material 5 will be described with reference to FIGS. The manufacturing method of the display device 10 using this sealing material is almost the same as the manufacturing method shown in FIGS. 3 and 4 described above, except that the sealing material is used instead of the photosensitive polyimide for the gap holding material. Only differ. Therefore, only this difference will be described, and the same reference numerals will be given to the same manufacturing steps as those of the manufacturing method described with reference to FIGS.
[0061]
As shown in FIG. 7, the TFT substrate 1 and the counter substrate 2 (both refer to FIG. 1) are manufactured separately. First, in the TFT substrate 1, the alignment film 1 a is formed on the inner surface of the TFT substrate 1 on the inner surface of the TFT substrate 1 (FIG. 8A) on which the transparent electrode is formed through a known film forming process in step S 31. After forming with a thickness of several tens of nanometers (FIG. 8B), the process proceeds to step S33. In step S33, the alignment of the liquid crystal molecules on the alignment film 1a formed in step S32 when no voltage is applied to the display device 10. Is performed, and the process proceeds to step S34. In step S34, cleaning for removing dust generated by the rubbing process is performed, and the process proceeds to step S35.
[0062]
In step S35, the first sealant 31 is drawn on the inner surface of the TFT substrate 1 at a height of, for example, 3 μm to 5 μm (FIG. 8C), and the process proceeds to step S36. Note that the first sealing material 31 corresponds to the gap holding material 5 in FIG. The circumference and height of the first sealant 31 are defined by the volume of the liquid crystal dropped in a range surrounded by the first sealant 31.
[0063]
In step S36, the first sealant 31 is irradiated with UV light to cure the first sealant 31 (FIG. 8D), and the process proceeds to step S37. In step S37, the TFT substrate 1 and the opposing substrate are set. A second seal material 3 serving as an adhesive for bonding the second seal material 2 is drawn on the inner surface of the TFT substrate 1 and the outer periphery of the first seal material 31 at a height of, for example, 9 μm to 15 μm (see FIG. 8-e) (see FIG. 2) The process proceeds to step S8.
[0064]
The subsequent manufacturing steps are the same as the above-described manufacturing steps of FIGS.
[0065]
As described above, the gap holding member 5 may be formed by curing the first sealant 31 with UV light.
[0066]
Next, a method of manufacturing the display device 10 when the gap holding material 5 is formed by bonding will be described with reference to FIGS. The manufacturing method of the display device 10 in this case is almost the same as the manufacturing method shown in FIG. 3 and FIG. 4 described above. Only differ. Therefore, only this difference will be described, and the same steps as those in the manufacturing method described with reference to FIGS. 3 and 4 will be denoted by the same reference numerals and description thereof will be omitted.
[0067]
As shown in FIG. 9, the TFT substrate 1 and the opposing substrate 2 (both refer to FIG. 1) are manufactured separately as described above. First, the TFT substrate 1 is formed on the TFT substrate 1 (FIG. 10A) on which the transparent electrode is formed through a known film forming process in step S1, and then, in step S42, a resin, SiO2 is formed on the inner surface of the TFT substrate 1. And the like are bonded to a height of, for example, 3 μm to 5 μm by a method such as bonding or hot pressing (FIG. 10B).
[0068]
The subsequent manufacturing steps are the same as the steps after step S4 in FIGS. 3 and 4. The resin and the inorganic material 41 such as SiO2 correspond to the gap holding material 5 in FIG.
[0069]
As described above, the gap holding material 5 may be formed by bonding to the TFT substrate 1 by a method such as bonding or hot pressing.
[0070]
As described above, in the display device and the method of manufacturing the same according to the first embodiment of the present invention, in the bonding step of the TFT substrate 1 and the counter substrate 2, the inner peripheral portion of the sealing material 3 on the side in contact with the liquid crystal 6. Since the gap maintaining material 5 is provided circumferentially and continuously so as to cover the inner peripheral surface of the sealing material 3, the uncured sealing material 3 and the liquid crystal 6 do not come into contact with each other. The sealing material 3 can be prevented from being eluted and diffused into the liquid crystal 6.
[0071]
In addition, by providing the gap holding material 5 which is defined in advance at a predetermined height on the TFT substrate 1, the cell thickness is defined by the gap holding material 5 when the opposing substrate 2 is bonded to the TFT substrate 1. Therefore, the cell thickness can be set with high accuracy.
[0072]
In the present embodiment, the sealing material 3, the vertical conductive material 4, and the gap holding material 5 are formed on the TFT substrate 1 side. However, the present invention is not limited to this. Similar effects can be obtained.
[0073]
Further, the sealing material 3 or the first sealing material 31 is cured by UV light, but may be cured by heat.
[0074]
Furthermore, examples in which an organic insulating material such as photosensitive polyimide, a resin or an inorganic insulating material such as SiO2, a sealing material, or the like is used as the gap holding material have been described. However, the present invention is not limited to this. Needless to say, any material may be used as long as it does not adversely affect the liquid crystal panel.
[0075]
In addition, a display device using a TFT switching element and a method for manufacturing the same have been described. However, the present invention is not limited to this. For example, an active matrix display device using a TFD switching element, a passive liquid crystal display device, or an electric paper such as an electronic paper. It may be applied to an electrophoresis apparatus or the like.
[0076]
FIG. 11 is a longitudinal sectional view of a display device showing a second embodiment of the present invention, and FIG. 12 is a plan view of a TFT substrate in the display device of FIG.
[0077]
The display device according to the second embodiment and the method of manufacturing the same are almost the same as the configuration of the display device shown in FIGS. 1 to 10 and the method of manufacturing the same, except that the gap holding material is not continuously formed. Alternatively, the only difference is that the TFT substrate and the counter substrate may be formed anywhere as long as they are in contact with the liquid crystal, or that no sealing material is used as a gap holding material. Therefore, only this difference will be described, and the same configurations and manufacturing methods as those of the display device of the first embodiment and the method of manufacturing the same will be given the same reference numerals, and description thereof will be omitted.
[0078]
As shown in FIG. 11, the display device 100 includes a TFT substrate 1 on which an alignment film 1a is formed on an inner surface, a counter substrate 2 on which an alignment film 2a is formed on an inner surface, and a TFT substrate 1 and a counter substrate 2. A sealing material 3 for joining the two substrates at both ends, a vertically conductive material 4 for electrically connecting the TFT substrate 1 and the opposing substrate 2, a gap holding material 50, and a liquid crystal sealed in an internal space between the two substrates. 6.
[0079]
As shown in FIG. 12, the sealing member 3, the vertical conducting member 4, and the gap holding member 50 are formed on, for example, the TFT substrate 1. On the inner surface of the TFT substrate 1, a sealing material 3 drawn in a peripheral shape on the periphery thereof, an upper and lower conductive material 4 formed at four corners of the sealing material 3, and a sealing material 3 on the side in contact with the liquid crystal 6. A gap holding material 50 provided discontinuously at a plurality of locations on the inner peripheral portion, and an alignment film 1 a formed on the inner surface of the TFT substrate 1 and in a region surrounded by the sealing material 3 and the gap holding material 50 are arranged. Is established.
[0080]
The gap holding material 50 is used for precisely defining the cell thickness when the opposing substrate 2 is bonded to the TFT substrate 1 in the process of assembling the display device 100. As the means for arranging the gap holding member 50, the various means described in the first embodiment are used.
[0081]
In the display device and the method of manufacturing the display device according to the second embodiment of the present invention having the above-described configuration, the TFT substrate 1 is provided with the gap holding material 50 defined at a predetermined height in advance. When the opposing substrate 2 is bonded to the TFT substrate 1, the cell thickness is defined by the gap holding material 50, so that the cell thickness can be set with high accuracy.
[0082]
In the present embodiment, the sealing material 3, the vertical conductive material 4, and the gap holding material 5 are formed on the TFT substrate 1 side. However, the present invention is not limited to this. The effect is obtained.
[0083]
The sealing material 3 is cured by UV light or heat. Further, the gap holding material 50 is discontinuously provided at a plurality of locations on the inner peripheral portion of the sealing material 3 on the side in contact with the liquid crystal 6, but is not limited thereto, and may be provided continuously. Further, as shown in FIG. 13, it may be disposed on the outer peripheral side of the sealing material 3. As a result, if the cell thickness can be defined with high accuracy, in any location, in any shape, It goes without saying that any arrangement may be used.
[0084]
Further, in the present embodiment, the injection of the liquid crystal 6 in the display device 100 is not limited to the liquid crystal dropping method, but is performed after the TFT substrate 1 and the counter substrate 2 are bonded with a high precision through a sealing material in a panel assembling process. Of course, the same effect can be obtained by applying a method of enclosing the liquid crystal from the notch provided in the sealing material.
[0085]
Furthermore, as the gap holding material, an organic insulating material such as photosensitive polyimide, an inorganic insulating material such as resin or SiO2, or the like is used. However, the material is not limited to this, and the cell thickness can be defined with high accuracy. Needless to say, any one may be used.
[0086]
Furthermore, a display device using a TFT switching element and a method of manufacturing the same have been described. However, the present invention is not limited to this. For example, an active matrix display device using a TFD switching element, a passive liquid crystal display device, and an electric paper such as an electronic paper. It may be applied to an electrophoresis apparatus or the like.
[Brief description of the drawings]
FIG. 1 is a longitudinal sectional view of a display device according to a first embodiment of the present invention.
FIG. 2 is a plan view of a TFT substrate in the display device of FIG.
FIG. 3 is a flowchart illustrating an example in which a photosensitive material is used as a gap holding material in a method of manufacturing a display device.
FIG. 4 is a manufacturing process diagram when a photosensitive material is used as a gap holding material.
FIG. 5 is a flowchart illustrating an example in which an inorganic insulating material is used for a gap holding material in a method of manufacturing a display device.
FIG. 6 is a manufacturing process diagram in a case where an inorganic insulating material is used for a gap holding material.
FIG. 7 is a flowchart illustrating an example in which a sealing material is used as a gap holding material in the method of manufacturing a display device.
FIG. 8 is a manufacturing process diagram when a sealing material is used as a gap holding material.
FIG. 9 is a flowchart illustrating an example in which a gap holding material is formed by bonding in a method of manufacturing a display device.
FIG. 10 is a manufacturing process diagram when a gap holding material is formed by bonding.
FIG. 11 is a longitudinal sectional view of a display device according to a second embodiment of the present invention.
FIG. 12 is a plan view of a TFT substrate in the display device of FIG.
FIG. 13 is a plan view showing a modification of the TFT substrate in the display device according to the second embodiment of the present invention.
[Explanation of symbols]
1: TFT substrate (element substrate)
2: Counter substrate
3. Sealing material (second sealing material)
5,50 ... gap maintaining material
6 ... Liquid crystal (electro-optic material)
10, 100 ... display device
11 Photosensitive polyimide (gap holding material)
21, 41 ... inorganic insulating material (resin, SiO2) (gap holding material)
31... First sealing material (gap holding material)

Claims

In a display device in which an element substrate and each inner surface of the substrate facing the element substrate are arranged to face each other via a sealing material, and an electro-optical material is interposed in the internal space,
A display device, wherein a gap holding material is provided near a side of the sealing material.

2. The display device according to claim 1, wherein the gap holding material is provided by forming a film on one of the substrates and then using a photoresist, dry etching or development, bonding, or drawing.

An element substrate and a sealing material are circumferentially disposed on a peripheral edge of one of the substrates facing the element substrate, and an electro-optical material is interposed by a dropping method in an inner space surrounded by the sealing material. In a display device in which the other substrate is pressed against the sealing material,
A display device, wherein a gap holding material is formed in a circumferential shape on an inner peripheral portion of the sealing material on a side in contact with the electro-optical material.

4. The display device according to claim 3, wherein the gap holding material is made of a substance that is incompatible with an electro-optic material sealed in the internal space. 5.

The gap holding material is formed continuously and circumferentially so as to cover the surface of the sealing material that comes into contact with the electro-optic material, in order to prevent the sealing material from being eluted into the electro-optic material. The display device according to claim 3, wherein:

The display device according to claim 3, wherein the gap holding member defines a distance between the two substrates.

An electro-optic material is encapsulated in an inner space between the element substrate and the opposingly arranged substrates via a sealing material drawn circumferentially on a peripheral portion of one of the substrates facing the element substrate. In the formed display device,
A display device, wherein a gap holding material is provided in an internal space between the two substrates.

The display device according to claim 7, wherein the gap holding member defines a distance between the two substrates.

The display device according to claim 7, wherein the gap holding member is formed circumferentially between the two substrates.

In a method of manufacturing a display device in which an element substrate and each inner surface of a substrate facing the element substrate are arranged to face each other via a sealing material and an electro-optic material is formed in an internal space,
A method of manufacturing a display device, comprising a step of arranging a gap holding material near a side of the sealing material.

In a method of manufacturing a display device in which an element substrate and each inner surface of a substrate facing the element substrate are arranged to face each other via a sealing material and an electro-optic material is formed in an internal space,
A step of forming a gap holding material at a prescribed height, and a continuous circumference on one of the substrates,
On the substrate on which the gap holding material is formed, a step of drawing the seal material on the outer peripheral portion of the gap holding material thicker than the gap holding material,
A step of dropping a specified amount of electro-optical material into the inner peripheral portion of the gap holding material by a dropping method on the substrate on which the gap holding material and the sealing material are formed,
The gap holding material and the sealing material are formed, and the other substrate is pressed to the height of the gap holding material while crushing the sealing material, and bonded to the substrate on which the electro-optical material is dropped,
After the bonding step, a step of curing the sealing material by irradiation of heat and light,
A method for manufacturing a display device, comprising:

In a method of manufacturing a display device in which an element substrate and each inner surface of a substrate facing the element substrate are arranged to face each other via a sealing material and an electro-optic material is formed in an internal space,
A step of forming a gap holding material at a specified height and in a circumferential shape on one of the substrates,
On the substrate on which the gap holding material is formed, drawing the seal material thicker than the gap holding material,
A step of pressing the gap holding material and the sealing material to the substrate on which the other substrate is formed, and pressing the sealing material to the height of the gap holding material while crushing the sealing material;
A step of enclosing the electro-optical material between the two substrates,
After the enclosing step, a step of curing the sealing material by irradiation of heat and light,
A method for manufacturing a display device, comprising: