JP2004228346A - Device and method for mounting electronic component - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a small-sized inexpensive electronic component mounting device that is high in productivity and free from the contamination of components and does not require frequent cleaning (can be maintained easily), and to provide a method of mounting electronic component. <P>SOLUTION: The electronic component mounting device which joins a joint object and an object to be joined to each other is provided with a plasma generating device which generates a plasma gas under the atmospheric pressure or its vicinity, a plasma supplying device which supplies the generated plasma gas to the junction between the joint object and object to be joined and injects the gas, and a cleaning/joining device which washes the surfaces of the junctions of both objects with the injected plasma gas under the atmospheric pressure or its vicinity and, almost simultaneously, joins the junctions to each other. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a mounting apparatus and a mounting method for an electronic component that joins a bonded object such as an electronic component and a bonded object such as a substrate while cleaning the bonded object such as a substrate.
[0002]
[Prior art]
At the beginning, electronic components and substrates were generally bonded by metal fusion, ultrasonic bonding, or conductive adhesives.However, equipment became larger and it was difficult to control the amount of adhesive applied. (1) As disclosed in Japanese Patent Application Laid-Open No. 2001-351892, an energy wave is applied to an electronic component or the like in a decompression chamber to clean the surface, and then the electronic component or the like is transported to a bonding chamber in which the inside is replaced with an inert gas, and is cooled to normal temperature Mounting device for bonding: (2) Bonding of material (bonded material) by glow discharge in a chamber reduced in pressure to a predetermined degree of vacuum as disclosed in JP-A-7-26076. A room-temperature bonding apparatus (mounting apparatus) for cleaning surfaces and bonding the materials by pressure or the like after cleaning has been proposed (Patent Document 2).
[0003]
[Patent Document 1]
JP 2001-351892 A (paragraphs 0016, 0017, 0
019, 0020, FIG. 1)
[0004]
[Patent Document 2]
JP-A-7-26076 (Paragraph 0007, FIG. 1)
[0005]
[Problems to be solved by the invention]
However, in the apparatus and method described in Patent Document 1, since the cleaning chamber and the bonding chamber are separate rooms, an inter-room transfer device for electronic components and the like is required, which results in a disadvantage that the device becomes large and complicated, and furthermore, decompression. (Decompression device) requires a long time to reduce the pressure to a predetermined pressure and low productivity, and the device is large, expensive and complicated, and the plasma extends to the inner wall of a sealed cleaning room or the like. Therefore, impurities are generated from the material constituting the inner wall, or impurities that are decomposed and ashed from the electronic components are deposited inside, and these impurities adhere to the electronic components and become contaminated. In this case, there is a drawback that impurities are deposited in a closed decompression chamber, so that cleaning must be performed frequently. Although the apparatus described in Patent Document 2 does not require an inter-room transfer apparatus or the like, it does not solve the above-mentioned disadvantages related to the reduced pressure because the reduced pressure (evacuation device) is required.
[0006]
In view of the above problems, the need for a transfer device between the electronic component room between the cleaning room and the bonding room is eliminated, and the decompression (vacuum evacuation device) for cleaning and bonding is not required. It is an object of the present invention to provide an electronic component mounting apparatus and a mounting method that have high productivity, do not cause component contamination, and do not require frequent cleaning (easy maintenance).
[0007]
[Means for Solving the Problems]
According to the present invention, when a predetermined gas is supplied between electrodes to which a predetermined high-frequency voltage is applied, a gas that is turned into plasma at or near the atmospheric pressure can be generated. Focusing on the fact that oxides and organic substances are removed, and that the activated surfaces can be joined by a high bonding force between atoms simply by abutting the activated surfaces (room temperature joining method). The generated plasma gas is sprayed onto the joint between the joint (electronic component) and the article (substrate) to clean the surface of the joint with plasma while bringing the clean joint between the electronic component and the substrate into contact with each other. In this way, electronic components and substrates are joined together.
[0008]
Here, the joint between the joined object and the joined object refers to an electrode of the joined object (for example, an electronic component in the form of a bare chip) and an electrode of the joined object (for example, a substrate) to which the electrode of the joined object is joined. Electronic components refer to bare chip semiconductors and electronic components such as resistors and capacitors, and substrates refer to substrates that have electrodes that join the electrodes of bare chip shaped electronic components.
[0009]
Cleaning refers to injecting a plasma gas onto the surfaces of the joints of the article to be joined and the article to be joined to clean and activate both surfaces, and in terms of time, from the start to the end of the ejection of the plasma gas. Is what it points to.
[0010]
In addition, the term “joining” refers to bringing the surfaces of the joints of the object and the object to be joined into contact with each other and integrally joining (joining). In time, the joining (joining) is completed immediately before the contact and separated. It refers to immediately after.
[0011]
To perform the cleaning of the joint surface and the joining of the joints substantially simultaneously means (1) joining at the same time as the start of the washing and continuing the washing after the joining is completed, and (2) joining after the start of the washing and joining. (3) joining after the start of cleaning and continuing to complete the washing at the same time as completion of the joining; (4) joining after the start of the washing and continuing the joining after the completion of the washing; (5) ▼ Refers to the start of bonding immediately after cleaning is completed. Cleaning is performed continuously for at least one time during bonding.
[0012]
More specifically, for example, in the case of (3), cleaning is started during the movement of the bonded object, the cleaning is continued during the contact (during the bonding), the bonding is performed while performing the cleaning, and the cleaning is completed simultaneously with the completion of the bonding. It is what makes you.
[0013]
Here, it goes without saying that the workpiece may be moved or both may be moved.
[0014]
Atmospheric pressure or near atmospheric pressure means a pressure of 20 to 110 KPa, more preferably 90 to 105 KPa.
[0015]
And the above-mentioned purpose is achieved by the following means.
(1) In an electronic component mounting apparatus for joining a joined object and an object to be joined,
A plasma generator that generates a plasma gas at or near atmospheric pressure, a plasma supply device that supplies the generated plasma gas to a joint between a bonded object and a bonded object, and injects the plasma gas, and an atmospheric pressure generated by the injected plasma gas. Or a cleaning / joining device that cleans the joint surface of the joint and the article to be joined in the vicinity thereof and joins the joints of the article and the article almost simultaneously. Mounting equipment.
[0016]
(2) In a method of mounting an electronic component for joining a joined object and a joined object,
A method for mounting an electronic component, comprising: a cleaning / joining step of injecting a plasma gas onto a surface of a joint between an object to be joined and an object to be joined and performing cleaning of the surface of the joint and joining of the joints substantially simultaneously.
[0017]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. Note that the description in this column does not limit the technical scope of the claims and the meaning of terms.
[0018]
FIG. 1 is a schematic side view of an electronic component mounting apparatus according to the present invention.
FIG. 2 is a schematic plan view of an electronic component mounting apparatus according to the present invention.
[0019]
FIG. 3 is a conceptual diagram of the plasma generator.
In FIGS. 1 and 2,
The electronic component mounting apparatus 1 includes a plasma generator 4 that generates a plasma gas at or near atmospheric pressure,
An electronic circuit board (hereinafter also referred to as a substrate) made of a bare chip semiconductor or a surface mount type electronic component (hereinafter also referred to as an electronic component) as a bonded object and silicon, glass, glass epoxy, or ceramic, or a polyimide or the like as a bonded object. A) a plasma gas supply device 6 for supplying and injecting the plasma gas to the joint of
A cleaning / bonding device 5 for cleaning the surface of the joint between the electronic component and the substrate at or near atmospheric pressure by the plasma gas to be injected, and for bonding the joint between the electronic component and the substrate at the same place almost simultaneously with the cleaning; ing.
[0020]
Reference numeral 511 denotes a cleaning / joining area, at least an area in contact with a joint between the joined object and the article to be joined, where washing and joining are performed.
[0021]
Hereinafter, the plasma generator 4, the plasma supply device 6, and the cleaning / bonding device 5 will be described in detail.
[0022]
In the following description of the embodiment, for the sake of simplicity of description, an organic substance and an oxide will be mainly described as an example in which argon gas and hydrogen gas are converted into plasma for cleaning and bonding. Cleaning and bonding can be performed by appropriately changing the type of cleaning and the cleaning conditions described below.
[0023]
In FIG. 3, a plasma generator 4 includes a gas cylinder 41 filled with an inert gas (eg, argon gas) necessary for cleaning, a gas cylinder 42 filled with a reducing gas (eg, hydrogen gas), and the like. The plasma generator 40 includes a flow rate adjuster 43 that adjusts a gas flow rate, and a plasma generator 40. The plasma generator 40 includes a high-frequency power supply 44 and a pair of electrodes 45 connected to the high-frequency power supply 44.
[0024]
The pair of electrodes 45 is made of a metal such as stainless steel, and is covered with a dielectric 451 having a relative dielectric constant of 6 to 45 (for example, of sinterable ceramics) made of an inorganic material, and has a distance d between the electrodes of 0.5 to 20 mm. (Preferably 1 ± 0.5 mm).
[0025]
The gas whose flow rate has been adjusted by the flow rate adjusting means 43 is turned into plasma at or near the atmospheric pressure when passing between the electrodes.
[0026]
Here, the gas used does not react with the joint between the electronic component and the substrate, the reducing gas may be hydrogen or carbon monoxide (preferably hydrogen), and the inert gas is argon, helium, neon, krypton. , Xenon, radon or nitrogen (preferably helium, argon, nitrogen).
[0027]
Then, according to the substance to be cleaned, an appropriate gas from the above-mentioned gases is sequentially switched and supplied as a single gas or as a mixed gas by the flow rate adjusting means 43.
[0028]
In order to obtain a high plasma density, the high-frequency power supply 44 preferably supplies a high-frequency high power to some extent. Specifically, it is preferable to apply a high-frequency voltage of 100 kHz to 800 MHz between the electrodes 45, It is even more preferred if there is. Further, the lower limit value of the power supplied between the electrodes is preferably 1 W / cm ² or more and 50 W / cm ² or less, preferably 2 W / cm ² or more, in an area (per cm ² ) in which discharge occurs. It is even more preferred.
[0029]
For this purpose, a pulse power source capable of changing the ON / OFF duty ratio is used as the high frequency power supply 44, and the applied energy is changed by changing the ON / OFF duty ratio in the range of 0.1 to 10 according to the gas used by the control means. You can change it.
[0030]
The high-frequency voltage applied between the electrodes may be a pulse wave or a sine wave.
[0031]
By the way, when plasma is generated by introducing an inert gas such as argon at or near the atmospheric pressure, the proportion of the inert gas component is reduced by mixing the reducing gas or the like, and plasma is hardly generated.
[0032]
For this reason, the effect of suppressing the plasma reaction is achieved by irradiating the gas passing through the plasma generating unit 452 with energy (for example, electron beam, radiation, ultraviolet light, or laser light) that promotes the reaction by an energy ray generator (not shown). May be eliminated.
[0033]
In this case, an electron beam accelerated at a voltage of 10 V to 90 kV can be suitably used as the electron beam, and a radiation emitted using copper (Cu) or molybdenum (Mo) as a radiation source is used as the radiation. Ultraviolet rays can be used in the range of 1 to 360 nm (especially 150 nm or less), and the laser beam exhibits an irradiation energy of 10 to 900 mJ using, for example, an excimer laser or a Nd: YAG laser as a light source. A glow discharge for generating plasma can be stably continued at a high density.
[0034]
Returning to FIGS. 1 and 2, the plasma supply device 6 includes a gas supply path 61 that guides the plasma gas generated by the plasma generation device 4 to the cleaning / bonding region 511 of the cleaning / bonding device 5, and converts the plasma gas into the electronic component 2 and the substrate 3. And a nozzle 62 for jetting to the surface of the joint with the nozzle 62.
[0035]
It is more preferable that the nozzle 62 is divided into 3 to 10 (preferably 3 to 5) in the horizontal direction of the cleaning / joining region 511 and arranged substantially uniformly, so that the plasma gas is uniformly jetted from the nozzle 62 to the joined object. .
[0036]
In addition, all or a part of the plasma generating device and the plasma supply device are disposed in the transfer positioning device 7, and the nozzle 62 is moved in the direction in which the plasma gas is jetted to the surface of the joint between the electronic component and the substrate. Alternatively, it may be attached to the arm 72.
[0037]
The parts feeders 741 and 742 are conveyors for transporting the electronic component 2 and the substrate 3 to transfer positions 20 and 30 to suction means 73 described later.
[0038]
The cleaning / joining apparatus 5 includes a transfer / positioning unit 7 and a substrate holding unit 52,
The substrate holding unit 52 fixes the substrate 3 transported by the transport / positioning unit 7 at a predetermined position by the substrate positioning unit 522 of the substrate fixing unit 521.
[0039]
The transport / positioning means 7 has a component transport section 512 and a suction means 73 having a suction pad made of an elastic material such as rubber, and the suction means 73 sucks and holds electronic components and substrates by a pressure reducing means (not shown). Can be done.
[0040]
The component transport section 512 lowers the suction means 73 disposed at the tip of the arm 72 described later to the transfer position of the electronic component 2 or the board 3, raises the arm 72 to the turning position (Z direction in the drawing), and A rotating shaft 71 for rotating (rotating in the θ direction in the figure) 73 between the transfer positions 20 and 30 of the electronic components 2 and the substrate 3 of the parts feeders 741 and 742 and the position of the cleaning / joining area 511, and an arm extending from the rotating shaft 71 72.
[0041]
At the tip of the arm 72, a suction means 73, which is a component positioning unit 513, is provided. The suction means 73 sucks the electronic component or the board at the transfer positions 20 and 30 for the electronic component 2 or the board 3, and performs cleaning and cleaning. At the position of the joint region 511, precise alignment of the joint between the electronic component and the substrate is performed based on positional information of the joint between the electronic component and the substrate, which will be described later.
[0042]
Then, the surface of the joint between the substrate and the electronic component is cleaned in the cleaning / joining region 511, and the joint between the electronic component and the substrate is brought into contact with each other when the suction means 73 is lowered in a state where the precision alignment has been performed. At room temperature.
[0043]
Here, a positioning camera (not shown) for measuring the position of the joint between the electronic component 2 and the substrate 3 is provided near the cleaning / joining region 511, and the position of the electronic component and the substrate measured by the positioning camera is measured. The position information of the joint is output to the control unit, and the control unit sucks the electronic component 2 based on the position information of the joint between the electronic component and the board so that the joint of the electronic component matches the joint of the substrate. In this state, the position of the suction means 73 is adjusted in the X, Y, and θ ₁ directions, and both are precisely positioned.
[0044]
In order to reinforce the bonding ability of the room temperature bonding, a pressing means (not shown) is provided to press the electronic component 2 sucked by the suction means at the time of abutting on the substrate 3 or, for example, a heat stage is mounted on the substrate fixing portion 521. (Not shown) and heating, or a heating means (not shown) abutted from the upper surface of the electronic component to heat the substrate and the electronic component, or an ultrasonic vibrator (not shown) When the electronic component 2 contacts the substrate 3, the electronic component 2 may be ultrasonically vibrated to assist the bonding.
[0045]
Reinforcement of the joining ability is particularly effective when joining conditions are insufficient, such as when the smoothness of the joining surface is insufficient.
[0046]
While the first embodiment has been described above, the second embodiment will be described below.
[0047]
This is intended to increase the bonding strength by forming a non-conductive film on the bonding part only by adding a part to the above mounting equipment.
[0048]
Specifically, the source gas cylinder 46 shown in FIG. 1 is added to the plasma generator 4 of the mounting apparatus described above, and after the joining is completed, hydrogen gas or hydrogen gas for cleaning by the flow rate adjusting means 43 is changed from non-hydrogen or argon gas. Switching to a mixed gas of a raw material gas for forming a conductive film (for example, a gas containing tetraethoxysilane) and an inert gas, forming a plasma at or near the atmospheric pressure, and injecting the plasma into the bonding portion to perform bonding. A non-conductive film is formed so as to cover the periphery of the completed joint between the electronic component and the board, and it is also possible to increase the joint strength.
[0049]
The source gas varies depending on the type of film to be formed. Examples of the silicon compound include alkylsilanes such as dimethylsilane and tetramethylsilane; organic silicon compounds such as silicon alkoxides such as tetramethoxysilane and tetraethoxysilane; and monosilane and disilane. And silicon halide compounds such as dichlorosilane, trichlorosilane and tetrachlorosilane, and other organosilanes.
[0050]
FIG. 4 is a flowchart of the mounting method, and FIG. 5 is a control block diagram of the mounting apparatus.
Referring to FIGS. 1, 4 (a) and 5, a method of cleaning and joining a joint between an electronic component and a substrate substantially simultaneously using the above-described mounting apparatus according to the first embodiment of the present invention. explain.
[0051]
The following description shows an example that can be realized, and the contents described in the claims are not limited to the description of the configuration of the following steps, the order of the steps, and the like.
[0052]
In FIG. 5, reference numeral 431 denotes a flow control device which adjusts and controls the gas flow rate of each gas cylinder connected to the flow rate adjusting means 43 in accordance with a command from the control means 9.
[0053]
Reference numeral 441 denotes a power supply control device which controls an output voltage value of the high frequency power supply 44, an ON / OFF ratio of a pulse, and the like in accordance with a command from the control means 9.
[0054]
Reference numeral 701 denotes a transport positioning control device which controls the rotating shaft 71 and the suction means 73 of the transport / positioning means 7 according to a command from the control means 9.
[0055]
Reference numeral 521 denotes a substrate holding unit control device, which controls a substrate positioning / releasing operation of the substrate positioning unit 522 according to a command from the control unit 9.
[0056]
Reference numeral 801 denotes a camera control device which causes a positioning camera to photograph the joint between the electronic component and the substrate, and outputs position information of the joint between the electronic component and the substrate to the control device.
[0057]
Reference numeral 91 denotes a storage unit which previously stores in the internal memory data such as flow rate data of each gas with respect to the cleaning object (for example, organic substance and oxide) and cleaning time (plasma gas injection time) for each cleaning object. 9 is output.
[0058]
Reference numeral 9 denotes control means for performing the above control.
Next, in order to make the description easy to understand, for example, a method of performing cleaning and bonding using hydrogen gas as a reducing gas and argon gas as an inert gas will be described with reference to FIG.
[0059]
In step 1, the operator performs a cleaning / joining start operation from the operation panel.
[0060]
Next, steps 2 to 6, which are the transporting steps, will be described.
In step 2, the control means rotates the rotating shaft 71 of the component transfer unit 512 by the start operation, and turns the arm 72 to the transfer position 30 of the board 3 transferred on the board parts feeder 742.
[0061]
Next, the control means lowers the rotating shaft 71 until the suction means 73 at the tip of the arm 72 can suck the substrate 3 on the parts feeder 742, and causes the suction means 73 to suck the substrate 3.
[0062]
In step 3, the control means raises the rotating shaft 71 to the turning position of the arm, and then turns the arm 72 to the cleaning joining area 511.
[0063]
Next, the control unit lowers the rotating shaft 71 to transfer the substrate sucked by the suction unit 73 to the substrate fixing unit 521, and the transferred substrate 3 is positioned and fixed at a predetermined position by the substrate positioning unit 522.
[0064]
In step 5, the component transport unit 512 and the suction unit 73 cause the control unit to transport the electronic component 2 transported on the parts feeder 741 of the electronic component 2 to the cleaning joining area 511 in the same manner as in the substrate suction and transport steps.
[0065]
In step 6, the control means fetches positional information of the joint between the electronic component and the board measured by a positioning camera (not shown) for measuring the position of the joint between the electronic component and the board, and joins the acquired electronic component and the board. Based on the positional information of the part, the displacement of the joint of the electronic component with respect to the joint of the substrate is calculated, and the joint of the electronic component is matched with the joint of the substrate (so that the displacement is zero). ), to perform a precise positioning of both by operating the suction means 73 to the X-Y-θ ₁ direction.
[0066]
Next, steps 7 to 9, which are cleaning / joining steps, will be described.
In step 7, the control unit reads the flow rate data of each gas with respect to the cleaning object (for example, organic substance and oxide) stored in the storage unit 91 in advance.
[0067]
Here, for the flow rate data of each gas with respect to the cleaning object, a flow rate experiment necessary for cleaning each gas with respect to each cleaning object is performed by a mounting device model, and the flow rate of each gas at which good cleaning is performed is measured. This is made possible by storing the flow rate data of each gas for each cleaning object.
[0068]
In order to perform good cleaning, the volume% of the reducing gas with respect to the inert gas on the surface of the joint between the electronic component and the substrate in the cleaning / bonding region should be 1 to 10 and the oxygen concentration should be 100 ppm or less. Is desirable.
[0069]
Then, the control means adjusts a valve (not shown) of the flow rate adjustment means 43 based on the flow rate data of each gas to supply hydrogen and argon gas supplied from the gas cylinders 41 and 42 to the plasma generation unit as a predetermined mixed gas. Let it.
[0070]
Here, the supply of the gas may be switched according to the cleaning object, for example, a single gas may be sequentially switched such as first supplying an argon gas and then supplying a hydrogen gas, or a mixture of an argon gas and a hydrogen gas may be supplied. May be supplied in combination.
[0071]
Next, the control unit turns on the high frequency power supply 44 to apply a high frequency voltage between the electrodes 45.
[0072]
Here, a high-frequency power supply having a variable frequency and output voltage may be used, and the control means may set the frequency and the voltage to obtain better cleaning of the cleaning object.
[0073]
By the application of the high-frequency voltage, a glow discharge is generated between the electrodes, and the gas passing through the plasma generating unit is turned into plasma.
[0074]
In step 8, the plasma-mixed gas is injected from the nozzle 62 toward the joint surface between the electronic component and the substrate via the gas supply path 61.
[0075]
Then, the control means starts the lowering of the rotating shaft 71 at the same time as the start of the injection of the plasma-converted gas, and injects the plasma-mixed gas toward the joint surface adsorbed by the adsorption unit 73.
[0076]
As a result, the organic matter on the surface of the joint between the electronic component and the substrate is ashed by the plasma-converted argon gas, the oxide film is reduced by the plasma-converted hydrogen gas, and the surface of the joint between the electronic component and the substrate is activated. The surface is purified.
[0077]
For the gas injection time, a cleaning experiment is performed on the various cleaning objects under predetermined cleaning conditions, and the required cleaning time for the various cleaning objects is stored in the storage unit 91 in advance.
[0078]
The control means may read out the necessary cleaning time according to the cleaning object and change the cleaning time according to this time.
[0079]
Then, the lowering of the electronic component continues while the cleaning is performed, and the bonding portions of the electronic component and the substrate come into contact with each other immediately before the lowering end, so that a strong room-temperature bonding at the atomic level is performed.
[0080]
In other words, gas injection is continued from the start of cleaning to the completion of joining.
In step 9, after the joining is completed, the control means closes a valve (not shown) of the flow rate adjusting means 43 to stop the gas supply and turns off the high frequency power supply.
[0081]
Next, step 10 which is a collection process will be described.
In step 10, the control means raises the rotating shaft 71 and sucks and collects the electronic component and the substrate which have been joined by the suction means 73.
[0082]
Referring to FIGS. 1, 4 (b) and 5, a non-conductive film is formed around a joint between an electronic component and a substrate using the above-described mounting apparatus according to the second embodiment of the present invention. The method for increasing the bonding strength will be described.
[0083]
In FIG. 1, reference numeral 46 denotes a cylinder filled with a source gas for forming a non-conductive film.
[0084]
The steps relating to the cleaning and joining are the same as those in the first embodiment, and a description thereof will be omitted.
In FIG.
In step 1, the substrate control means opens the valve of the flow rate adjustment means 43 to which the gas cylinders 46 and 41 filled with the inert gas and the source gas forming the non-conductive film are opened, and the source gas and the inert gas are opened. Supply to plasma generation means.
[0085]
In this case, the ratio of the inert gas is preferably 90% (preferably 95)% by volume or more in the reactive gas.
[0086]
In step 2, the control means converts the mixed gas of the source gas and the inert gas into plasma in the same manner as in the first embodiment.
[0087]
In step 3, the control means injects a mixed gas of a source gas and an inert gas into a plasma toward the joint between the electronic component and the substrate which have already been joined in the same manner as in the first embodiment, A non-conductive film is formed so as to cover the periphery of the joint between the substrate and the substrate.
[0088]
In step 4, after the film formation is completed, the injection of the plasma gas is stopped, and the electronic component and the substrate on which the film formation has been completed are collected.
[0089]
With the above mounting device and method,
Since cleaning and joining can be simultaneously performed at the same place, productivity can be improved.
[0090]
Since cleaning and joining can be performed at or near atmospheric pressure, decompression equipment such as vacuum pumps and pressure-resistant chambers are not required, and decompression time can be reduced. At the same time, the configuration of production equipment is simplified, and productivity can be increased and costs can be reduced. It becomes.
[0091]
In particular, since cleaning and joining can be performed without the need for high-temperature heating, joining with less residual stress (less stress) due to mismatch of thermal expansion between components due to heating becomes possible, and deterioration and failure due to distortion can occur. It is possible to manufacture a small number of electronic components.
[0092]
In addition, since the periphery of the joint between the electronic component and the substrate is covered with the non-conductive film, it is possible to manufacture an electronic component having high joining strength.
[0093]
The cleaning / joining method of the present invention can be efficiently adapted to an actual mounting process requiring mass production, and the tact time of the entire mounting process can be significantly reduced.
[0094]
【The invention's effect】
According to the present invention, the configuration of the mounting apparatus is simple and small, the cost of the apparatus can be reduced, the productivity can be improved, and the maintenance of the apparatus is easy.
[0095]
In addition, there is no contamination of the electronic component, there is little occurrence of deterioration and failure due to thermal distortion, and it is possible to manufacture an electronic component having a high bonding strength between the electronic component and the substrate. The effect described above can be obtained.
[Brief description of the drawings]
FIG. 1 is a schematic side view of an electronic component mounting apparatus according to the present invention.
FIG. 2 is a conceptual plan view of an electronic component mounting apparatus according to the present invention.
FIG. 3 is a conceptual diagram of a plasma generator.
FIG. 4 is a flowchart of a mounting method.
FIG. 5 is a control block diagram of the mounting apparatus.
[Explanation of symbols]
REFERENCE SIGNS LIST 1 mounting device 2 electronic component 3 substrate 4 plasma generating device 5 cleaning / bonding device 6 plasma supply device 7 transfer positioning device 9 control device 40 plasma generating device 43 flow rate adjusting device 73 suction device

Claims (6)

In an electronic component mounting apparatus for joining a joined object and an object to be joined, a plasma generator for generating a plasma gas at or near atmospheric pressure, and the generated plasma gas is supplied to a joint between the joined object and the object to be joined. And a plasma supply device for spraying and joining the joints of the article and the article to be joined at or near the atmospheric pressure with the ejected plasma gas and joining the joints of the article and the article almost simultaneously. An electronic component mounting device, comprising: a joining device. The electronic component mounting apparatus according to claim 1, wherein the bonding between the bonded parts of the bonded object and the bonded object is performed by a normal temperature bonding method. It is provided with a transport means for transporting the joint and the article to be joined from the supply means of the article and the article to be joined to the cleaning / joining apparatus, and collecting the joined article and the article to be washed and joined. The electronic component mounting apparatus according to claim 1, wherein: 4. The electronic component mounting apparatus according to claim 1, wherein the bonded object is a bare chip semiconductor or a surface mount type electronic component, and the bonded object is an electronic circuit board. 5. In a method for mounting an electronic component that joins a joint and a workpiece, plasma gas is sprayed onto a surface of the joint between the joint and the workpiece, and cleaning is performed so that the cleaning of the joint surface and the joining of the joints are performed substantially simultaneously. An electronic component mounting method characterized by having a joining step. 6. The electronic component mounting method according to claim 5, further comprising a transporting step of transporting the bonded article and the article to the cleaning / joining apparatus, and a collecting step of collecting the joined article and the article.

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