JP2004221294A - Ultrasonic bonding tool and method for manufacturing semiconductor by using the same - Google Patents

Ultrasonic bonding tool and method for manufacturing semiconductor by using the same Download PDF

Info

Publication number
JP2004221294A
JP2004221294A JP2003006563A JP2003006563A JP2004221294A JP 2004221294 A JP2004221294 A JP 2004221294A JP 2003006563 A JP2003006563 A JP 2003006563A JP 2003006563 A JP2003006563 A JP 2003006563A JP 2004221294 A JP2004221294 A JP 2004221294A
Authority
JP
Japan
Prior art keywords
surface electrode
pressing portion
lead terminal
semiconductor chip
lead frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003006563A
Other languages
Japanese (ja)
Other versions
JP3753426B2 (en
Inventor
Masataka Nanba
正孝 難波
Norihide Funato
紀秀 船戸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2003006563A priority Critical patent/JP3753426B2/en
Publication of JP2004221294A publication Critical patent/JP2004221294A/en
Application granted granted Critical
Publication of JP3753426B2 publication Critical patent/JP3753426B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/77—Apparatus for connecting with strap connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/37147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/3754—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/40247—Connecting the strap to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/77—Apparatus for connecting with strap connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/842—Applying energy for connecting
    • H01L2224/84201—Compression bonding
    • H01L2224/84205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To bond conductors for a plurality of joints which are different in height and formed of different materials, at the same time with sufficient strength. <P>SOLUTION: The ultrasonic bonding tool connects the conductor 12 mounted over a plane of a top-surface electrode 14 of a semiconductor chip and a lead terminal 11b positioned on a different plate. At the same time, the bonding tool has a 1st press 21 which presses a joint between the top-surface electrode 14 of the semiconductor chip 13 and one end part 12a of the conductor 12, a 2nd press part 22 which presses a joint between a lead terminal 11b of a lead frame 11 and the other end 12b of the conductor 12, a pedestal 24 which is inserted between one of the 1st press 21 and 2nd press 22 and a body 23 of the ultrasonic bonding tool 20 and corresponds to the height difference between the top-surface electrode 14 of the semiconductor chip 13 and the lead terminal 11b of the lead frame 11, and a plurality of projections 25 and 26 formed at the 1st press 21 and 2nd press 22. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

【０００１】
【発明の属する技術分野】
本発明は、超音波接合装置の超音波接合具に係わり、特に、半導体チップの上面電極とリードフレームのリード端子とに跨って載置された板または帯状の接続導体を同時に接合させるのに好適な超音波接合具、および該超音波接合具を用いた半導体装置の製造方法に関するものである。
【０００２】
【従来の技術】
従来、モータードライバ、音声増幅用パワーＩＣ、情報機器のＡＣアダプタ等に用いられる大電力用の半導体装置としては、細い金属線に替えて、半導体チップの上面電極とリードフレームのリード端子との接続に、帯状の接続導体を超音波接合してなるものがある（例えば、特許文献１参照。）。
【０００３】
この特許文献１に開示された半導体装置では、図６に示すように、リードフレーム１０４のアイランド部１０４ａに載置された半導体チップ１０１の上面電極１０２に帯状の接続導体１０３の一端部１０３ａを重ね、押圧して超音波接合し、更にリードフレーム１０４のリード端子１０４ｂに接続導体１０３の他端部１０３ｂを重ね、押圧して超音波接合している。
【０００４】
そして、この超音波接合には、一般に、押圧面が平坦な超音波接合具が用いられている。
【０００５】
このため、接合部を個別に接合する従来の超音波接合装置では、冗長な加工時間を要し、半導体装置の製造コストの増大を招くなどの問題がある。
【０００６】
更に、また、超音波接合具の押圧面が平坦であるため、接合部材が滑りやすく、超音波接合具の振動エネルギーの伝達ロスが生じて十分な接合強度が得られない問題がある。
【０００７】
一方、従来の超音波接合装置の超音波ホーンには、電子部品が取り付けられる放熱プレートをフィンに接合するにあたり、超音波を印加した際に放熱プレートが滑らないように保持して十分な接合強度で放熱プレートをフィンに接合できるように、押圧部に突起が形成されているものがある（例えば、特許文献２参照。）。
【０００８】
この特許文献２に開示された従来の超音波ホーンの構造について、図７を用いて説明する。図７（ａ）はその超音波ホーンの底面図、図７（ｂ）は、図７（ａ）のＥ−Ｅ線に沿って切断し、矢印方向に眺めた断面図である。
【０００９】
図に示すように、超音波ホーン（図示せず）の先端に、超音波接合具１１１が取り付けられている。超音波接合具１１１の底面には、電子部品（図示せず）が取り付けられる放熱プレート（図示せず）とフィン（図示せず）の接合部を押圧する押圧部１１２を有している。押圧部１１２の中央は平面部１１３になっているが、残りの外周部には、複数の略角錐台状の突起が形成されており、接合時に滑り止めとなるローレット１１４を構成している。
【００１０】
この種の超音波接合装置では、超音波ホーンの押圧部は単一の平面形状をしているため上記特許文献１に開示された半導体装置のように、半導体チップの上面電極の上面とリードフレームのリード端子上面のステージブロックからの距離、すなわち高さが異なる場合、接続導体を同時に接合することはできず、上述した超音波接合工程を別々に行わなければならない。
【００１１】
更に、また、半導体チップの上面電極とリードフレームのリード端子の材質が異なる場合、超音波接合条件が違うため、接続導体を同時に接合することはできず、上述した超音波接合工程を別々に行わなければならない。
【００１２】
【特許文献１】
特開２００１−２７４２０６号公報（第２−３頁、図１）
【００１３】
【特許文献２】
特開２００１−３３４３７２号公報（第３頁、図４）
【００１４】
【発明が解決しようとする課題】
上述した特許文献１および特許文献２に開示された超音波接合装置の超音波ホーンにおいては、接合部の高さが異なる複数の接続体、または接合部の材質が異なる複数の接続体を、同時にしかも十分な強度で接合できないという問題点がある。
【００１５】
本発明の目的は、半導体チップの上面電極の平面とその平面が異なる位置にあるリードフレームのリード端子とに接続導体を同時にしかも十分な接合強度で接合するのに好適な超音波接合具を提供することにある。
【００１６】
また、本発明の別の目的は、半導体チップの上面電極の材質と異なる材質のリードフレームのリード端子とに接続導体を同時にしかも十分な接合強度で接合するのに好適な超音波接合具を提供することにある。
【００１７】
更に、本発明の別の目的は、半導体チップの上面電極の平面とその平面が異なる位置にあるリードフレームのリード端子に接続導体を同時にしかも十分な強度で接合してなる半導体装置の製造方法を提供することにある。
【００１８】
更に、また、本発明の別の目的は、半導体チップの上面電極とこの上面電極の材質と異なる材質からなるリードフレームのリード端子に接続導体を同時にしかも十分な強度で接合してなる半導体装置の製造方法を提供することにある。
【００１９】
【課題を解決するための手段】
上記目的を達成するために、本発明の超音波接合具では、半導体チップの上面電極とこの上面電極の平面と異なる平面に位置するリードフレームのリード端子とに跨って載置された板または帯状の接続導体を前記上面電極とリード端子に対して同時に超音波接合する超音波接合具であって、前記半導体チップの上面電極と前記接続導体との接合部を押圧する第１押圧部と、前記第１押圧部と異なる平面に位置し、且つ前記リードフレームのリード端子と前記接続導体との接合部を押圧する第２押圧部と、前記第１および第２押圧部に形成された複数の突起とを有することを特徴としている。
【００２０】
本発明によれば、超音波ホーンの先端に取り付けられた超音波接合具に、複数の接合部の高さの差に倣った段差を有する複数の押圧部を設け、更にその押圧部に突起を形成しているので、同時に各接合部が確実に押圧されて超音波が伝播し、安定して十分な接合強度が得られる。
【００２１】
また、上記別の目的を達成するために、本発明の超音波接合具では、半導体チップの上面電極とこの上面電極の材質と異なる材質からなるリードフレームのリード端子とに跨って載置された板または帯状の接続導体を前記上面電極とリード端子に対して同時に超音波接合する超音波接合具であって、前記半導体チップの上面電極と前記接続導体との接合部を押圧する第１押圧部と、前記リードフレームのリード端子と前記接続導体との接合部を押圧し、且つ前記第１押圧部と異なる押圧力を生じせしめる第２押圧部と、前記第１および第２押圧部に形成された複数の突起とを有することを特徴としている。
【００２２】
本発明によれば、超音波ホーンの先端に取り付けられた超音波接合具に、複数の接合部の材質の違いに応じて、押圧力を異ならしめ、更に各押圧部に突起を形成しているので、同時に各接合部が確実に押圧されて超音波が伝播し、安定して十分な接合強度が得られる。
【００２３】
更に、上記別の目的を達成するために、本発明の半導体装置の製造方法では、上述の本発明に係わる超音波接合具を用いて、半導体チップの上面電極とこの上面電極の平面と異なる平面に位置するリードフレームのリード端子とに跨って載置された板または帯状の接続導体を前記上面電極とリード端子に対して十分な接合強度で超音波接合することを特徴としている。
【００２４】
本発明によれば、半導体チップの上面電極の平面とその平面が異なる位置にあるリードフレームのリード端子とに接続導体を同時にしかも十分な強度で接合してなる半導体装置が得られる。
【００２５】
更に、また、上記別の目的を達成するために、本発明の半導体装置の製造方法では、上述の本発明に係わる超音波接合具を用いて、半導体チップの上面電極の材質と異なる材質のリードフレームのリード端子とに跨って載置された板または帯状の接続導体を前記上面電極とリード端子に対して同時に十分な接合強度で超音波接合することを特徴としている。
【００２６】
本発明によれば、半導体チップの上面電極の材質と異なる材質のリードフレームのリード端子とに接続導体を同時にしかも十分な強度で接合してなる半導体装置が得られる。
【００２７】
【発明の実施の形態】
以下本発明の実施の形態について、図面を参照しながら説明する。
【００２８】
（第１の実施の形態）
図１は、本発明の第１の実施の形態に係わる超音波接合具を示す図で、図１（ａ）はその超音波接合具の底面図、図１（ｂ）はこの超音波接合具を用いて半導体チップの上面電極とリードフレームのリード端子を板または帯状の接続導体にて接続する状態を示す断面図で、図１（ａ）の超音波接合具をＡ−Ａ線に沿って切断し、図示の矢印方向から眺めたものである。
【００２９】
本実施の形態の超音波接合具は、図４に示すような、リードフレーム１１のアイランド部１１ａに載置された半導体チップ１３の上面電極１４とこの上面電極１４の平面と異なる平面に位置するリードフレーム１１のリード端子１１ｂとに跨って板または帯状の接続導体１２が設けられてなる半導体装置において、上面部電極１４およびリードフレーム１１のリード端子１１ｂに接続導体１２の一端部１２ａおよび他端部１２ｂを同時に超音波接合する場合の例である。
【００３０】
図１に示すように、超音波ホーン（図示せず）の先端に取り付けられる本実施の形態の超音波接合具２０では、その底面は、接続導体１２の一端部１２ａと半導体チップ１３の上面電極１４との接合部を押圧する第１押圧部２１と、接続導体１２の他端部１２ｂとリードフレーム１１のリード端子１１ｂとの接合部を押圧する第２押圧部２２とを有している。
【００３１】
そして、第２押圧部２２には、胴体部２３との間に半導体チップ１３の上面電極１４の平面とリードフレーム１１のリード端子１１ｂの平面との距離、すなわち高さの差（Δｈ）に相当する台座部２４が挿入されている。この台座部２４は、胴体部２３を加工して、胴体部２３と一体に形成してもよく、または胴体部２３と別個に予め形成されたものを胴体部２３に固着しても構わない。
【００３２】
さらに、第１押圧部２１および第２押圧部２２には、それぞれ同じ大きさの複数の四角錘台状突起２５および２６が格子状に形成され、接合部の面積の大きい第１押圧部２１に、より多くの突起２５が設けられている。
【００３３】
次に、本実施の形態の超音波接合具２０を用いて、接続導体１２を半導体チップ１３の上面電極１４とリードフレーム１１のリード端子１１ｂに超音波接合する場合について、図１を参照して説明する。
【００３４】
まず、アイランド部１１ａに半導体チップ１３が載置されたリードフレーム１１を超音波接合装置のステージブロック３１にセットし、半導体チップ１３のアルミニウム材からなる上面電極１４、および、例えば、ニッケルメッキされた銅からなるリードフレーム１１のリード端子１１ｂに跨ってアルミニウム材からなる板または帯状の接続導体１２を載置し、接続導体１２の一端部１２ａを上面電極１４に重ね、また他端部１２ｂをリード端子１１ｂに重ねる。
【００３５】
そして、超音波接合具２０を降下させ、接続導体１２の一端部１２ａを第１押圧部２１により上面電極１４に、また接続導体１２の他端部１２ｂを第２押圧部２２によりリードフレーム１１のリード端子１１ｂに同時に押圧する。続いて、接続導体１２の一端部１２ａおよび他端部１２ｂに水平方向の超音波を印加することで、半導体チップ１３の上面電極１４およびリード端子１１ｂと接続導体１２の一端部１２ａおよび他端部１２ｂが同時に超音波接合される。
【００３６】
すなわち、第１押圧部２１の突起２５、および第２押圧部２２の突起２６が接続導体１２の一端部１２ａおよび他端部１２ｂのそれぞれに食い込むことにより、各接合部の高さに微妙な寸法誤差があっても、各接合部が同時に押圧されて、超音波が確実に各接合部に伝播するので、十分な接合強度で接合される。
【００３７】
なお、この明細書で言うアルミニウム材とは、アルミニウムまたはアルミニウム合金からなるものを言う。
【００３８】
以上説明したように、上記第１の実施の形態によれば、超音波接合具に複数の接合部の高さの差に倣った段差を有する複数の押圧部を設け、その押圧部に突起を形成して突起が接続導体に食い込むようにしたので、各接合部の高さに微妙な寸法誤差があっても各接合部が確実に押圧されて超音波が伝播する。
【００３９】
更に、単位面積当たりの突起の数が等しくなるように各接続部の突起の数を変えたので、各接合部に単位面積当たり等しい押圧力が印加されて、安定して十分な接合強度が得られる。これにより、接合に要する加工時間が短縮され、半導体装置における製造コストが低減できる利点がある。
【００４０】
（第２の実施の形態）
図２は、本発明の第２の実施の形態に係わる超音波接合具を示す図で、図２（ａ）はその超音波接合具の底面図、図２（ｂ）は半導体チップの上面電極とリードフレームのリード端子を板または帯状の接続導体にて接続する状態を示す断面図で、図２（ａ）の超音波接合具をＢ−Ｂ線に沿って切断し、図示の矢印方向から眺めたものである。本実施の形態において、上記第１の実施の形態と同一の構成部分には、同一符号を付して、その説明を省略する。
【００４１】
本実施の形態の超音波接合具は、図４に示すような半導体装置において、半導体チップ１３の上面電極１４とリードフレーム１１のリード端子１１ｂの高さがほぼ等しく、半導体チップ１３の上面電極１４とその材質と異なる材質のリードフレーム１１のリード端子１１ｂとに跨って板または帯状の接続導体１２を載置し、上面電極１４およびリードフレーム１１のリード端子１１ｂに接続導体１２の一端部１２ａおよび他端部１２ｂを同時に超音波接合する場合の例である。
【００４２】
まず、図２に示すように、第２の実施の形態の超音波接合具４０が、第１の実施の形態と異なる点は、接合部の材質に応じて、第１押圧部４１に設けられた四角錐台状突起４５の先端部の面積と、第２押圧部４２に設けられた四角錐台状突起４６の先端部の面積とに差を設けたことにある。
【００４３】
例えば、上面電極１４が金電極であり、リードフレーム１１のリード端子１１ｂが鉄と銅の合金（主成分は鉄）からなり、その材質（硬さ）に大きな差がある場合には、突起４６の先端部の面積を突起４５の先端部の面積より小さくして、リードフレーム１１のリード端子１１ｂに加わる単位面積当たりの押圧力を上面電極１４に加わる単位面積当たりの押圧力より高くすることができる。
【００４４】
実験によれば、アルミニウムと金、銅、鉄の超音波接合のし易さは、同じ超音波接合条件では金が最も容易で、以下銅、鉄の順であり、アルミニウムと鉄の超音波接合では、単位面積当たりの押圧力は高い方が良好であった。これは、超音波接合では、接合界面の酸化膜を壊して新生面同士を金属結合させているが、酸化膜が実質的に存在しない金に比べて酸化膜が強固な材質の材料ほど酸化膜を壊すためのエネルギーが必要なためと推定される。
【００４５】
これにより、第１押圧部４１と第２押圧部４２に設けられた突起４５、４６により、同時に、接続導体１２の一端部１２ａと上面電極１４との接合部および接続導体１２の他端部１２ｂとの接合部を確実に押圧するとともに、接続導体１２の一端部１２ａおよび他端部１２ｂへの押圧力を変えて、超音波の振動エネルギーの伝達量を材質毎に適した条件に合わせることにより、十分な接合強度で接合される。
【００４６】
尚、ここでは、上面電極１４の平面とリードフレーム１１のリード端子１１ｂの平面の高さがほぼ等しいため、胴体部４３には台座部を設けず、第１押圧部４１と第２押圧部４２の平面は、同一平面をなしている。
【００４７】
以上説明したように、上記第２の実施の形態によれば、各接合部の材質の差に応じて突起の先端部の面積を変えたので、材質によらず同時に各接合部が確実に押圧されて超音波が伝播し、安定して十分な接合強度が得られる。これにより、接合に要する加工時間が短縮され、半導体装置における製造コストが低減できる利点がある。
【００４８】
（第３の実施の形態）
図３は、本発明の第３の実施の形態に係わる超音波接合具を示す図で、図３（ａ）はその超音波接合具の底面図、図３（ｂ）は半導体チップの上面電極とリードフレームのリード端子を板または帯状の接続導体にて接続する状態を示す断面図で、図３（ａ）の超音波接合具をＣ−Ｃ線に沿って切断し、図示の矢印方向から眺めたものである。本実施の形態において、上記第１の実施の形態と同一の構成部分には、同一符号を付して、その説明を省略する。
【００４９】
本実施の形態の超音波接合具は、図４に示すような、半導体チップ１３の上部電極１４の平面と異なる平面を有し、且つ半導体チップ１３の上面電極１４の材質と異なる材質からなるリードフレーム１１のリード端子１１ｂとに跨って板または帯状の接続導体１２が設けられてなる半導体装置において、上部電極１４およびリードフレーム１１のリード端子１１ｂに接続導体１２の一端部１２ａおよび他端部１２ｂを同時に超音波接合する場合の例である。
【００５０】
本実施の形態の超音波接合具５０は、図３に示すように、第１の実施の形態と第２の実施の形態を合わせた構造となっている。
【００５１】
すなわち、第１押圧部５１と第２押圧部５２とは、半導体チップ１３の上面電極１４の平面とリードフレーム１１のリード端子１１ｂの平面との距離、すなわち高さの差（Δｈ）とに相当する段差を有している。この段差は、第２押圧部５２と胴体部５３との間に台座部５４を挿入することにより形成されている。
【００５２】
そして、第２押圧部５２に設けた四角錐台状の突起５６の先端部の面積を、第１押圧部５１に設けた四角錐台状の突起５５の先端部の面積より小さく形成している。
【００５３】
然るに、第１押圧部５１と第２押圧部５２に設けられた突起５５、５６により、同時に、接続導体１２の一端部１２ａと上面電極１４との接合部および接続導体１２の他端部１２ｂとの接合部を確実に押圧するとともに、接続導体１２の一端部１２ａおよびの他端部１２ｂへの押圧力を変えて、超音波の指導エネルギーの伝達量を材質毎に適した条件にあわせることにより、十分な接合強度で接合される。
【００５４】
以上説明したように、上記第３の実施の形態によれば、同時に各接合部が確実に押圧されて超音波が伝播し、安定して十分な接合強度が得られる。これにより、接合に要する加工時間が短縮され、半導体装置における製造コストが低減できる利点がある。
【００５５】
上述の実施の形態では、第１および第２押圧部に形成された突起が四角錘台形状突起の場合について説明したが、本発明は、これに限定されるものではなく、さらに多角錐台形状突起、円錐台形状突起、または半球状突起としても構わない。
【００５６】
また、上述の第１および第３の実施の形態では、リードフレームのリード端子の平面が上面電極の平面より低い場合について説明したが、本発明は、これに限定されるものではなく、反対にリード端子の平面が高い場合についても同様に適用できる。
【００５７】
更に、リードフレームのリード端子や上面電極の材質もこれに限定されるものではなく、種々変更して適用することができる。
【００５８】
次に、本発明の超音波接合具を用いた半導体装置の製造方法の実施の形態について、図面を参照しながら説明する。
【００５９】
図４は、本発明の第１の実施の形態に係わる超音波接合具を用いた半導体装置の製造工程を示す断面図で、図４（ａ）は組立て部品を示す断面図、図４（ｂ）は超音波接合工程を示す断面図、図４（ｃ）はモールドされた半導体装置を示す断面図である。
【００６０】
始めに、リードフレーム１１、接続導体１２および半導体チップ１３が用意され、超音波接合装置のチップマウンター部（図示せず）の収納部にそれぞれセットされる。
【００６１】
次に、アイランド部１１ａに半導体チップ１３が、例えば導電性ペーストを介して固着された後、接続導体１２がリードフレーム１１および半導体チップ１３上に載置されて接続導体の一端部１２ａと半導体チップの上面電極１４および接続導体の他端部１２ｂとリードフレームのリード端子１１ｂが重ね合わされる。
【００６２】
次に、リードフレーム１１が超音波接合部のステージブロック３１に移載され、第１の実施の形態に係わる超音波接合具を用いて超音波接合が行われる。即ち、超音波接合具２０の第１押圧部２１により接続導体の一端部１２ａと上面電極１４を、第２押圧部２２により接続導体の他端部１２ｂとリード端子１１ｂを同時に押圧して、超音波を印加することにより接続導体１２がリードフレームのリード端子１１ｂと上面電極１４に十分な強度で接合される。
【００６３】
次に、リードフレーム１１をモールド装置（図示せず）に移送して樹脂１５でモールドすることにより半導体装置が完成する。
【００６４】
以上説明したように、本発明の実施の形態による半導体装置の製造方法によれば、半導体チップの上面電極の平面とその平面が異なる位置にあるリードフレームのリード端子とに接続導体を同時にしかも十分な強度で接合してなる半導体装置が得られる。
【００６５】
図５は、本発明の第２の実施の形態に係わる超音波接合具を用いた半導体装置の製造工程を示す断面図で、図５（ａ）は組立て部品を示す断面図、図５（ｂ）は超音波接合工程を示す断面図、図５（ｃ）はモールドされた半導体装置を示す断面図である。
【００６６】
図に示すように、本実施の形態は、第２の実施の形態に係わる超音波接合具を用いる点を除いて上記第１の実施の形態に係わる超音波接合具を用いた半導体装置の製造工程と同一であり、同一構成部分には同一符号を付してその説明は省略する。
【００６７】
以上説明したように、本発明の第２の実施の形態による半導体装置の製造方法によれば、半導体チップの上面電極の材質と異なる材質のリードフレームのリード端子とに接続導体を同時にしかも十分な強度で接合してなる半導体装置が得られる。
【００６８】
【発明の効果】
以上説明したように、本発明によれば、半導体チップの上面電極リードフレームのリード端子に跨って載置された接続導体を同時にしかも十分な強度で接合することができる。
【００６９】
従って、接続に要する加工時間が短縮され、半導体装置における製造コストが低減できる。
【図面の簡単な説明】
【図１】本発明の第１の実施の形態に係わる超音波接合具を示す図で、図１（ａ）は超音波接合具の底面図、図１（ｂ）は、半導体チップの上面電極とリードフレームのリード端子を接続導体にて超音波接合する状態を示す図で、図１（ａ）のＡ−Ａ線に沿う断面図。
【図２】本発明の第２の実施の形態に係わる超音波接合具を示す図で、図２（ａ）は超音波接合具の底面図、図２（ｂ）は、半導体チップの上面電極とリードフレームのリード端子を接続導体にて超音波接合する状態を示す図で、図２（ａ）のＢ−Ｂ線に沿う断面図。
【図３】本発明の第３の実施の形態に係わる超音波接合具を示す図で、図３（ａ）は超音波接合具の底面図、図３（ｂ）は、半導体チップの上面電極とリードフレームのリード端子を接続導体にて超音波接合する状態を示す図で、図３（ａ）のＣ−Ｃ線に沿う断面図。
【図４】本発明の第１の実施の形態に係わる半導体装置の製造工程を示す断面図で、図４（ａ）は組立て部品を示す断面図、図４（ｂ）は超音波接合工程を示す断面図、図４（ｃ）はモールドされた半導体装置を示す断面図。
【図５】本発明の第２の実施の形態に係わる半導体装置の製造工程を示す断面図で、図５（ａ）は組立て部品を示す断面図、図５（ｂ）は超音波接合工程を示す断面図、図５（ｃ）はモールドされた半導体装置を示す断面図である。
【図６】従来の半導体装置を示す断面図。
【図７】従来の超音波接合具を示す図で、図７（ａ）は超音波接合具の底面図、図７（ｂ）は、図７（ａ）のＥ−Ｅ線に沿う断面図。
【符号の説明】
１１、１０４ リードフレーム
１１ａ、１０４ａ アイランド部
１１ｂ、１０４ｂ リード端子
１２、１０３ 接続導体
１２ａ、１０３ａ 接続導体の一端部
１２ｂ、１０３ｂ 接続導体の他端部
１３、１０１ 半導体チップ
１４、１０２ 上面電極
１５ 樹脂
２０、４０、５０、１１１ 超音波接合具
２１、４１、５１ 第１押圧部
２２、４２、５２ 第２押圧部
２３、４３、５３ 胴体部
２４、５４ 台座部
２５、２６、４５、４６、５５、５６ 突起
３１ ステージブロック
１１２ 押圧部
１１３ 平面部
１１４ ローレット[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an ultrasonic bonding tool of an ultrasonic bonding apparatus, and is particularly suitable for simultaneously bonding a plate or a strip-shaped connection conductor placed across an upper surface electrode of a semiconductor chip and a lead terminal of a lead frame. The present invention relates to an ultrasonic bonding tool and a method for manufacturing a semiconductor device using the ultrasonic bonding tool.
[0002]
[Prior art]
Conventionally, as a high-power semiconductor device used for motor drivers, power ICs for audio amplification, AC adapters for information devices, etc., instead of thin metal wires, the connection between the top electrode of the semiconductor chip and the lead terminal of the lead frame In addition, there is one obtained by ultrasonically bonding a strip-shaped connection conductor (see, for example, Patent Document 1).
[0003]
In the semiconductor device disclosed in Patent Document 1, as shown in FIG. 6, one end portion 103 a of a strip-shaped connection conductor 103 is overlaid on the upper surface electrode 102 of the semiconductor chip 101 placed on the island portion 104 a of the lead frame 104. The other end portion 103b of the connection conductor 103 is superimposed on the lead terminal 104b of the lead frame 104, and is ultrasonically bonded.
[0004]
For this ultrasonic bonding, generally, an ultrasonic bonding tool having a flat pressing surface is used.
[0005]
For this reason, in the conventional ultrasonic bonding apparatus which joins a junction part separately, redundant processing time is required and there exists a problem of causing the increase in the manufacturing cost of a semiconductor device.
[0006]
Furthermore, since the pressing surface of the ultrasonic bonding tool is flat, there is a problem that the bonding member is slippery, and transmission loss of vibration energy of the ultrasonic bonding tool is generated and sufficient bonding strength cannot be obtained.
[0007]
On the other hand, the ultrasonic horn of the conventional ultrasonic bonding apparatus has a sufficient bonding strength by holding the heat radiating plate so that it does not slip when ultrasonic waves are applied when bonding the heat radiating plate to which electronic components are attached to the fin. In some cases, a protrusion is formed on the pressing portion so that the heat dissipation plate can be joined to the fin (see, for example, Patent Document 2).
[0008]
The structure of the conventional ultrasonic horn disclosed in Patent Document 2 will be described with reference to FIG. 7A is a bottom view of the ultrasonic horn, and FIG. 7B is a cross-sectional view taken along the line EE of FIG. 7A and viewed in the direction of the arrow.
[0009]
As shown in the figure, an ultrasonic connector 111 is attached to the tip of an ultrasonic horn (not shown). The bottom surface of the ultrasonic bonding tool 111 has a heat release plate (not shown) to which an electronic component (not shown) is attached and a pressing portion 112 that presses the bonding portion between the fins (not shown). Although the center of the pressing portion 112 is a flat portion 113, a plurality of substantially pyramid-shaped projections are formed on the remaining outer peripheral portion to constitute a knurl 114 that serves as a non-slip when joined.
[0010]
In this type of ultrasonic bonding apparatus, since the pressing portion of the ultrasonic horn has a single planar shape, the upper surface of the upper electrode of the semiconductor chip and the lead frame, as in the semiconductor device disclosed in Patent Document 1 above. When the distance from the stage block on the upper surface of the lead terminal, that is, the height is different, the connecting conductors cannot be bonded simultaneously, and the above-described ultrasonic bonding process must be performed separately.
[0011]
Furthermore, when the materials of the upper electrode of the semiconductor chip and the lead terminal of the lead frame are different, the ultrasonic bonding conditions are different, so the connecting conductors cannot be bonded simultaneously, and the ultrasonic bonding process described above is performed separately. There must be.
[0012]
[Patent Document 1]
JP 2001-274206 A (page 2-3, FIG. 1)
[0013]
[Patent Document 2]
JP 2001-334372 A (page 3, FIG. 4)
[0014]
[Problems to be solved by the invention]
In the ultrasonic horn of the ultrasonic bonding apparatus disclosed in Patent Document 1 and Patent Document 2 described above, a plurality of connecting bodies having different joint heights or a plurality of connecting bodies having different joint materials are simultaneously used. In addition, there is a problem that it cannot be joined with sufficient strength.
[0015]
An object of the present invention is to provide an ultrasonic bonding tool suitable for bonding a connecting conductor to a lead terminal of a lead frame at a position different from the plane of the upper surface electrode of the semiconductor chip at the same time with sufficient bonding strength. There is to do.
[0016]
Another object of the present invention is to provide an ultrasonic connector suitable for bonding a connection conductor to a lead terminal of a lead frame made of a material different from the material of the upper surface electrode of the semiconductor chip at the same time with sufficient bonding strength. There is to do.
[0017]
Furthermore, another object of the present invention is to provide a method of manufacturing a semiconductor device in which a connection conductor is simultaneously bonded with sufficient strength to lead terminals of a lead frame in which the plane of the upper surface electrode of the semiconductor chip is different from the plane. It is to provide.
[0018]
Furthermore, another object of the present invention is to provide a semiconductor device in which a connection conductor is simultaneously bonded to a lead terminal of a lead frame made of a material different from the material of the upper surface electrode of the semiconductor chip and the upper surface electrode with sufficient strength. It is to provide a manufacturing method.
[0019]
[Means for Solving the Problems]
In order to achieve the above-mentioned object, in the ultrasonic bonding tool of the present invention, a plate or a belt-like shape placed across the upper surface electrode of the semiconductor chip and the lead terminal of the lead frame located on a plane different from the plane of the upper surface electrode. An ultrasonic bonding tool for simultaneously ultrasonically bonding the connection conductor to the upper surface electrode and the lead terminal, wherein the first pressing portion presses the bonding portion between the upper surface electrode of the semiconductor chip and the connection conductor; A second pressing portion that is located on a different plane from the first pressing portion and that presses the joint between the lead terminal of the lead frame and the connecting conductor; and a plurality of protrusions formed on the first and second pressing portions It is characterized by having.
[0020]
According to the present invention, the ultrasonic connector attached to the tip of the ultrasonic horn is provided with a plurality of pressing portions having steps following the difference in height of the plurality of connecting portions, and a protrusion is formed on the pressing portion. Since they are formed, each joint is reliably pressed at the same time so that the ultrasonic wave propagates, and a sufficient joint strength can be obtained stably.
[0021]
In order to achieve the above-described another object, in the ultrasonic bonding tool of the present invention, the ultrasonic bonding tool is placed across the upper surface electrode of the semiconductor chip and the lead terminal of the lead frame made of a material different from the material of the upper surface electrode. An ultrasonic bonding tool for simultaneously ultrasonically bonding a plate or strip-shaped connection conductor to the upper surface electrode and the lead terminal, wherein the first pressing portion presses the bonding portion between the upper surface electrode of the semiconductor chip and the connection conductor. And a second pressing portion that presses a joint portion between the lead terminal of the lead frame and the connection conductor and generates a pressing force different from that of the first pressing portion, and the first and second pressing portions. And a plurality of protrusions.
[0022]
According to the present invention, the ultrasonic bonding tool attached to the tip of the ultrasonic horn is made to have different pressing force according to the difference in material of the plurality of bonding portions, and further, a protrusion is formed on each pressing portion. Therefore, at the same time, each joint is reliably pressed and the ultrasonic wave propagates, and a sufficient joint strength can be obtained stably.
[0023]
Furthermore, in order to achieve the another object, in the method for manufacturing a semiconductor device of the present invention, the ultrasonic bonding tool according to the present invention is used, and the upper surface electrode of the semiconductor chip and a plane different from the plane of the upper surface electrode are used. A plate or a strip-shaped connecting conductor placed across the lead terminal of the lead frame located at the position is ultrasonically bonded to the upper surface electrode and the lead terminal with sufficient bonding strength.
[0024]
According to the present invention, it is possible to obtain a semiconductor device in which a connection conductor is simultaneously bonded with sufficient strength to a plane of an upper surface electrode of a semiconductor chip and a lead terminal of a lead frame at a position where the plane is different.
[0025]
Furthermore, in order to achieve the another object, in the method of manufacturing a semiconductor device of the present invention, the lead having a material different from the material of the upper surface electrode of the semiconductor chip is used by using the ultrasonic bonding tool according to the present invention. A plate or a strip-shaped connection conductor placed across the lead terminals of the frame is ultrasonically bonded to the upper surface electrode and the lead terminals simultaneously with sufficient bonding strength.
[0026]
According to the present invention, it is possible to obtain a semiconductor device in which a connection conductor is bonded to a lead frame lead terminal made of a material different from the material of the upper surface electrode of the semiconductor chip at the same time and with sufficient strength.
[0027]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the drawings.
[0028]
(First embodiment)
FIG. 1 is a view showing an ultrasonic connector according to the first embodiment of the present invention, FIG. 1 (a) is a bottom view of the ultrasonic connector, and FIG. 1 (b) is the ultrasonic connector. 1 is a cross-sectional view showing a state in which a top electrode of a semiconductor chip and a lead terminal of a lead frame are connected to each other by a plate or a strip-like connecting conductor, using the ultrasonic bonding tool of FIG. It is cut and viewed from the direction of the arrow shown.
[0029]
The ultrasonic bonding tool of the present embodiment is located on a plane different from the plane of the upper surface electrode 14 of the semiconductor chip 13 placed on the island portion 11a of the lead frame 11 and the upper surface electrode 14 as shown in FIG. In a semiconductor device in which a plate or strip-like connection conductor 12 is provided across the lead terminal 11 b of the lead frame 11, one end 12 a and the other end of the connection conductor 12 are connected to the upper surface electrode 14 and the lead terminal 11 b of the lead frame 11. It is an example in the case of carrying out ultrasonic bonding of the part 12b simultaneously.
[0030]
As shown in FIG. 1, in the ultrasonic bonding tool 20 of the present embodiment attached to the tip of an ultrasonic horn (not shown), the bottom surfaces thereof are one end portion 12 a of the connection conductor 12 and the upper surface electrode of the semiconductor chip 13. 14 has a first pressing portion 21 that presses the joint portion with 14, and a second pressing portion 22 that presses the joint portion between the other end portion 12 b of the connection conductor 12 and the lead terminal 11 b of the lead frame 11.
[0031]
The second pressing portion 22 corresponds to the distance (Δh) between the body portion 23 and the distance between the plane of the upper surface electrode 14 of the semiconductor chip 13 and the plane of the lead terminal 11 b of the lead frame 11. A pedestal 24 is inserted. The pedestal portion 24 may be formed integrally with the body portion 23 by processing the body portion 23, or a previously formed portion separately from the body portion 23 may be fixed to the body portion 23.
[0032]
Further, the first pressing portion 21 and the second pressing portion 22 are each formed with a plurality of square frustum-like projections 25 and 26 having the same size in a lattice shape, and the first pressing portion 21 having a large area of the joint portion is formed on the first pressing portion 21 and the second pressing portion 22. More projections 25 are provided.
[0033]
Next, referring to FIG. 1, a case where the connection conductor 12 is ultrasonically bonded to the upper surface electrode 14 of the semiconductor chip 13 and the lead terminal 11b of the lead frame 11 using the ultrasonic bonding tool 20 of the present embodiment will be described. explain.
[0034]
First, the lead frame 11 on which the semiconductor chip 13 is placed on the island portion 11a is set on the stage block 31 of the ultrasonic bonding apparatus, and the upper surface electrode 14 made of an aluminum material of the semiconductor chip 13 and, for example, nickel-plated A plate or strip-shaped connecting conductor 12 made of an aluminum material is placed across the lead terminals 11b of the lead frame 11 made of copper, one end 12a of the connecting conductor 12 is overlaid on the upper surface electrode 14, and the other end 12b is lead. It overlaps with the terminal 11b.
[0035]
Then, the ultrasonic bonding tool 20 is lowered, and one end portion 12 a of the connection conductor 12 is connected to the upper surface electrode 14 by the first pressing portion 21, and the other end portion 12 b of the connection conductor 12 is connected to the lead frame 11 by the second pressing portion 22. Simultaneously presses the lead terminal 11b. Subsequently, by applying an ultrasonic wave in the horizontal direction to the one end 12 a and the other end 12 b of the connection conductor 12, the upper surface electrode 14 and the lead terminal 11 b of the semiconductor chip 13 and the one end 12 a and the other end of the connection conductor 12 are used. 12b are ultrasonically bonded simultaneously.
[0036]
That is, the protrusion 25 of the first pressing portion 21 and the protrusion 26 of the second pressing portion 22 bite into each of the one end portion 12a and the other end portion 12b of the connecting conductor 12, so that the dimension of each joint portion is delicate. Even if there is an error, each joint is pressed at the same time, and the ultrasonic wave is reliably transmitted to each joint, so that the joints are joined with sufficient joint strength.
[0037]
In addition, the aluminum material said in this specification means what consists of aluminum or an aluminum alloy.
[0038]
As described above, according to the first embodiment, the ultrasonic bonding tool is provided with a plurality of pressing portions having steps following the difference in height of the plurality of bonding portions, and protrusions are provided on the pressing portions. Since the protrusion is formed so as to bite into the connection conductor, even if there is a slight dimensional error in the height of each joint, each joint is reliably pressed and ultrasonic waves propagate.
[0039]
In addition, since the number of protrusions in each connecting portion is changed so that the number of protrusions per unit area is equal, an equal pressing force per unit area is applied to each joint portion, and stable and sufficient joint strength is obtained. It is done. Thereby, there is an advantage that the processing time required for bonding is shortened and the manufacturing cost of the semiconductor device can be reduced.
[0040]
(Second Embodiment)
2A and 2B are diagrams showing an ultrasonic bonding tool according to a second embodiment of the present invention. FIG. 2A is a bottom view of the ultrasonic bonding tool, and FIG. 2B is an upper surface electrode of a semiconductor chip. FIG. 2 is a cross-sectional view showing a state in which the lead terminals of the lead frame are connected to each other by a plate or a strip-like connection conductor, and the ultrasonic bonding tool of FIG. It is what I saw. In the present embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.
[0041]
In the ultrasonic bonding apparatus of the present embodiment, in the semiconductor device as shown in FIG. 4, the height of the upper surface electrode 14 of the semiconductor chip 13 and the lead terminal 11 b of the lead frame 11 is substantially equal, and the upper surface electrode 14 of the semiconductor chip 13. A plate-like or strip-like connecting conductor 12 is placed across the lead terminal 11b of the lead frame 11 made of a material different from that of the material, and one end portion 12a of the connecting conductor 12 and the lead electrode 11b of the top electrode 14 and the lead frame 11 and This is an example in which the other end portion 12b is simultaneously ultrasonically bonded.
[0042]
First, as shown in FIG. 2, the ultrasonic bonding tool 40 of the second embodiment is different from the first embodiment in that the first pressing portion 41 is provided according to the material of the bonding portion. This is because there is a difference between the area of the tip of the truncated pyramidal protrusion 45 and the area of the tip of the truncated pyramidal protrusion 46 provided in the second pressing portion 42.
[0043]
For example, when the top electrode 14 is a gold electrode, the lead terminal 11b of the lead frame 11 is made of an alloy of iron and copper (main component is iron), and there is a large difference in material (hardness), the protrusion 46 The area of the tip of the protrusion 45 is made smaller than the area of the tip of the protrusion 45 so that the pressing force per unit area applied to the lead terminal 11 b of the lead frame 11 is higher than the pressing force per unit area applied to the upper surface electrode 14. it can.
[0044]
According to experiments, the ease of ultrasonic bonding of aluminum and gold, copper and iron is the easiest for gold under the same ultrasonic bonding conditions, followed by copper and iron, followed by ultrasonic bonding of aluminum and iron. Then, the higher the pressing force per unit area, the better. This is because in ultrasonic bonding, the oxide film at the bonding interface is broken and the new surfaces are metal-bonded to each other. It is estimated that energy is required to break.
[0045]
As a result, the projections 45 and 46 provided on the first pressing portion 41 and the second pressing portion 42 simultaneously cause the joint portion between the one end portion 12 a of the connection conductor 12 and the upper surface electrode 14 and the other end portion 12 b of the connection conductor 12. The joint is securely pressed and the pressing force to the one end 12a and the other end 12b of the connecting conductor 12 is changed so that the amount of transmission of ultrasonic vibration energy is adjusted to a condition suitable for each material. Bonded with sufficient bonding strength.
[0046]
Here, since the height of the plane of the upper surface electrode 14 and the plane of the lead terminal 11b of the lead frame 11 are substantially equal, the body portion 43 is not provided with a pedestal portion, and the first pressing portion 41 and the second pressing portion 42 are provided. These planes are the same plane.
[0047]
As described above, according to the second embodiment, the area of the tip of the protrusion is changed according to the difference in the material of each joint, so that each joint can be reliably pressed simultaneously regardless of the material. Then, the ultrasonic wave propagates and a sufficient bonding strength can be obtained stably. Thereby, there is an advantage that the processing time required for bonding is shortened and the manufacturing cost of the semiconductor device can be reduced.
[0048]
(Third embodiment)
3A and 3B are views showing an ultrasonic bonding tool according to a third embodiment of the present invention. FIG. 3A is a bottom view of the ultrasonic bonding tool, and FIG. 3B is an upper surface electrode of a semiconductor chip. 3 is a cross-sectional view showing a state in which the lead terminals of the lead frame are connected to each other by a plate or a strip-like connection conductor, and the ultrasonic bonding tool of FIG. It is what I saw. In the present embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.
[0049]
The ultrasonic bonding tool of the present embodiment has a plane different from the plane of the upper electrode 14 of the semiconductor chip 13 and is made of a material different from the material of the upper electrode 14 of the semiconductor chip 13 as shown in FIG. In a semiconductor device in which a plate or strip-like connection conductor 12 is provided across the lead terminal 11b of the frame 11, one end 12a and the other end 12b of the connection conductor 12 are connected to the upper electrode 14 and the lead terminal 11b of the lead frame 11. It is an example in the case of performing ultrasonic bonding simultaneously.
[0050]
As shown in FIG. 3, the ultrasonic connector 50 of the present embodiment has a structure in which the first embodiment and the second embodiment are combined.
[0051]
That is, the first pressing portion 51 and the second pressing portion 52 correspond to the distance between the plane of the upper surface electrode 14 of the semiconductor chip 13 and the plane of the lead terminal 11b of the lead frame 11, that is, the height difference (Δh). It has a step to make. This step is formed by inserting a pedestal portion 54 between the second pressing portion 52 and the body portion 53.
[0052]
The area of the tip portion of the quadrangular frustum-shaped projection 56 provided in the second pressing portion 52 is formed to be smaller than the area of the tip portion of the quadrangular frustum-shaped projection 55 provided in the first pressing portion 51. .
[0053]
However, the projections 55 and 56 provided on the first pressing portion 51 and the second pressing portion 52 simultaneously cause the joint portion between the one end portion 12a of the connection conductor 12 and the upper surface electrode 14 and the other end portion 12b of the connection conductor 12 to By reliably pressing the joint portion of the connecting conductor 12 and changing the pressing force to the one end portion 12a and the other end portion 12b of the connecting conductor 12, the transmission amount of the ultrasonic guidance energy is adjusted to a condition suitable for each material. Bonded with sufficient bonding strength.
[0054]
As described above, according to the third embodiment, the joints are simultaneously pressed at the same time and the ultrasonic waves are propagated, so that sufficient joint strength can be obtained stably. Thereby, there is an advantage that the processing time required for bonding is shortened and the manufacturing cost of the semiconductor device can be reduced.
[0055]
In the above-described embodiment, the case where the protrusions formed on the first and second pressing portions are quadrangular frustum-shaped protrusions has been described. However, the present invention is not limited to this, and the polygonal frustum shape is further limited. A projection, a truncated cone-shaped projection, or a hemispherical projection may be used.
[0056]
In the first and third embodiments described above, the case where the plane of the lead terminal of the lead frame is lower than the plane of the upper surface electrode has been described, but the present invention is not limited to this, and conversely The same applies to the case where the lead terminal has a high flat surface.
[0057]
Further, the material of the lead terminal of the lead frame and the upper surface electrode is not limited to this, and various changes can be applied.
[0058]
Next, an embodiment of a method of manufacturing a semiconductor device using the ultrasonic bonding tool of the present invention will be described with reference to the drawings.
[0059]
4A and 4B are cross-sectional views showing a manufacturing process of the semiconductor device using the ultrasonic bonding tool according to the first embodiment of the present invention. FIG. 4A is a cross-sectional view showing the assembly parts, and FIG. ) Is a sectional view showing an ultrasonic bonding step, and FIG. 4C is a sectional view showing a molded semiconductor device.
[0060]
First, the lead frame 11, the connection conductor 12, and the semiconductor chip 13 are prepared, and are respectively set in the accommodating parts of the chip mounter part (not shown) of the ultrasonic bonding apparatus.
[0061]
Next, after the semiconductor chip 13 is fixed to the island portion 11a via, for example, a conductive paste, the connection conductor 12 is placed on the lead frame 11 and the semiconductor chip 13, and the one end portion 12a of the connection conductor and the semiconductor chip The upper surface electrode 14 and the other end portion 12b of the connecting conductor are superimposed on the lead terminal 11b of the lead frame.
[0062]
Next, the lead frame 11 is transferred to the stage block 31 of the ultrasonic bonding portion, and ultrasonic bonding is performed using the ultrasonic bonding tool according to the first embodiment. That is, the first pressing portion 21 of the ultrasonic connector 20 simultaneously presses the one end portion 12a of the connecting conductor and the upper surface electrode 14 and the second pressing portion 22 simultaneously presses the other end portion 12b of the connecting conductor and the lead terminal 11b. By applying the sound wave, the connection conductor 12 is bonded to the lead terminal 11b of the lead frame and the upper surface electrode 14 with sufficient strength.
[0063]
Next, the lead frame 11 is transferred to a molding apparatus (not shown) and molded with the resin 15 to complete the semiconductor device.
[0064]
As described above, according to the method of manufacturing a semiconductor device according to the embodiment of the present invention, the connection conductors can be provided at the same time to the plane of the upper surface electrode of the semiconductor chip and the lead terminal of the lead frame at a different plane. A semiconductor device formed by bonding with a sufficient strength can be obtained.
[0065]
FIG. 5 is a cross-sectional view showing a manufacturing process of a semiconductor device using an ultrasonic connector according to the second embodiment of the present invention. FIG. 5 (a) is a cross-sectional view showing assembled parts, and FIG. ) Is a sectional view showing an ultrasonic bonding step, and FIG. 5C is a sectional view showing a molded semiconductor device.
[0066]
As shown in the drawing, the present embodiment is a method for manufacturing a semiconductor device using the ultrasonic bonding tool according to the first embodiment except that the ultrasonic bonding tool according to the second embodiment is used. The same reference numerals are given to the same components, and the description thereof is omitted.
[0067]
As described above, according to the manufacturing method of the semiconductor device according to the second embodiment of the present invention, the connection conductor is provided at the same time with the lead terminal of the lead frame made of a material different from the material of the upper surface electrode of the semiconductor chip. A semiconductor device formed by bonding with strength is obtained.
[0068]
【The invention's effect】
As described above, according to the present invention, the connection conductors placed across the lead terminals of the upper surface electrode lead frame of the semiconductor chip can be joined simultaneously and with sufficient strength.
[0069]
Therefore, the processing time required for connection is shortened, and the manufacturing cost of the semiconductor device can be reduced.
[Brief description of the drawings]
1A and 1B are diagrams showing an ultrasonic bonding tool according to a first embodiment of the present invention. FIG. 1A is a bottom view of the ultrasonic bonding tool, and FIG. 1B is an upper surface electrode of a semiconductor chip. FIG. 2 is a diagram showing a state in which the lead terminals of the lead frame are ultrasonically bonded with a connecting conductor, and is a cross-sectional view taken along the line AA in FIG.
2A and 2B are diagrams showing an ultrasonic bonding tool according to a second embodiment of the present invention, in which FIG. 2A is a bottom view of the ultrasonic bonding tool, and FIG. 2B is an upper surface electrode of a semiconductor chip; FIG. 3 is a diagram showing a state in which the lead terminals of the lead frame are ultrasonically bonded by a connecting conductor, and is a cross-sectional view taken along line BB in FIG.
3A and 3B are diagrams showing an ultrasonic bonding tool according to a third embodiment of the present invention, in which FIG. 3A is a bottom view of the ultrasonic bonding tool, and FIG. 3B is an upper surface electrode of a semiconductor chip; FIG. 4 is a diagram showing a state in which the lead terminals of the lead frame are ultrasonically bonded by a connecting conductor, and is a cross-sectional view taken along the line CC in FIG.
4A and 4B are cross-sectional views showing a manufacturing process of the semiconductor device according to the first embodiment of the present invention. FIG. 4A is a cross-sectional view showing assembled parts, and FIG. 4B is an ultrasonic bonding process. FIG. 4C is a cross-sectional view showing a molded semiconductor device.
5A and 5B are cross-sectional views showing a manufacturing process of a semiconductor device according to a second embodiment of the present invention. FIG. 5A is a cross-sectional view showing an assembly part, and FIG. 5B is an ultrasonic bonding process. FIG. 5C is a sectional view showing a molded semiconductor device.
FIG. 6 is a cross-sectional view showing a conventional semiconductor device.
7A and 7B are diagrams showing a conventional ultrasonic connector, where FIG. 7A is a bottom view of the ultrasonic connector, and FIG. 7B is a cross-sectional view taken along line EE of FIG. 7A. .
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 11, 104 Lead frame 11a, 104a Island part 11b, 104b Lead terminal 12, 103 Connection conductor 12a, 103a One end part 12b of a connection conductor, 103b The other end part 13 of a connection conductor 101 Semiconductor chip 14, 102 Upper surface electrode 15 Resin 20 , 40, 50, 111 Ultrasonic bonding tool 21, 41, 51 First pressing part 22, 42, 52 Second pressing part 23, 43, 53 Body part 24, 54 Base part 25, 26, 45, 46, 55, 56 Protrusion 31 Stage block 112 Press part 113 Plane part 114 Knurl

Claims (12)

半導体チップの上面電極とこの上面電極の平面と異なる平面に位置するリードフレームのリード端子とに跨って載置された板または帯状の接続導体を前記上面電極とリード端子に対して同時に超音波接合する超音波接合具であって、
前記半導体チップの上面電極と前記接続導体との接合部を押圧する第１押圧部と、
前記第１押圧部と異なる平面に位置し、且つ前記リードフレームのリード端子と前記接続導体との接合部を押圧する第２押圧部と、
前記第１および第２押圧部に形成された複数の突起と、
を有することを特徴とする超音波接合具。A plate or strip-shaped connecting conductor placed across the upper surface electrode of the semiconductor chip and the lead terminal of the lead frame located on a plane different from the plane of the upper surface electrode is simultaneously ultrasonically bonded to the upper surface electrode and the lead terminal. An ultrasonic bonding tool that
A first pressing portion that presses a joint between the upper surface electrode of the semiconductor chip and the connection conductor;
A second pressing part that is located on a different plane from the first pressing part and that presses the joint between the lead terminal of the lead frame and the connection conductor;
A plurality of protrusions formed on the first and second pressing portions;
An ultrasonic connector characterized by comprising: 半導体チップの上面電極とこの上面電極の材質と異なる材質からなるリードフレームのリード端子とに跨って載置された板または帯状の接続導体を前記上面電極とリード端子に対して同時に超音波接合する超音波接合具であって、
前記半導体チップの上面電極と前記接続導体との接合部を押圧する第１押圧部と、
前記リードフレームのリード端子と前記接続導体との接合部を押圧し、且つ前記第１押圧部と異なる押圧力を生じせしめる第２押圧部と、
前記第１および第２押圧部に形成された複数の突起と、
を有することを特徴とする超音波接合具。A plate or a strip-shaped connecting conductor placed across the upper surface electrode of the semiconductor chip and the lead terminal of the lead frame made of a material different from the material of the upper surface electrode is simultaneously ultrasonically bonded to the upper surface electrode and the lead terminal. An ultrasonic connector,
A first pressing portion that presses a joint between the upper surface electrode of the semiconductor chip and the connection conductor;
A second pressing portion that presses a joint portion between the lead terminal of the lead frame and the connection conductor and generates a pressing force different from that of the first pressing portion;
A plurality of protrusions formed on the first and second pressing portions;
An ultrasonic connector characterized by comprising: 前記押圧力は単位面積あたりの押圧力であることを特徴とする請求項２記載の超音波接合具。The ultrasonic bonding tool according to claim 2, wherein the pressing force is a pressing force per unit area. 前記半導体チップの上面電極と前記リードフレームのリード端子とが異なる平面を有し、且つ前記第１押圧部と前記第２押圧部とが異なる平面に位置することを特徴とする請求項２記載の超音波接合具。The upper surface electrode of the semiconductor chip and the lead terminal of the lead frame have different planes, and the first pressing portion and the second pressing portion are located on different planes. Ultrasonic bonding tool. 前記上面電極の平面と前記リードフレームのリード端子の平面との距離の差と、前記第１押圧部の平面と前記第２押圧部の平面との距離の差が等しくなるように、前記第１押圧部と前記第２押圧部に段差を設けたことを特徴とする請求項１または請求項４記載の超音波接合具。The first difference is such that the difference in distance between the plane of the upper surface electrode and the plane of the lead terminal of the lead frame is equal to the difference in distance between the plane of the first pressing portion and the plane of the second pressing portion. The ultrasonic bonding tool according to claim 1, wherein a step is provided between the pressing portion and the second pressing portion. 前記第１押圧部に設けられた突起の数と前記第２押圧部に設けられた突起の数とを、前記接合部の面積に応じて異ならしめたことを特徴とする請求項１乃至請求項４のいずれか１項に記載の超音波接合具。The number of protrusions provided on the first pressing portion and the number of protrusions provided on the second pressing portion are made different according to the area of the joint portion. The ultrasonic bonding tool according to any one of 4. 前記第１押圧部に設けられた突起の先端部の面積と前記第２押圧部に設けられた突起の先端部の面積とを、前記接合部の材質に応じて異ならしめたことを特徴とする請求項２または請求項５記載の超音波接合具。The area of the tip portion of the protrusion provided in the first pressing portion and the area of the tip portion of the protrusion provided in the second pressing portion are made different depending on the material of the joint portion. The ultrasonic connector according to claim 2 or 5. 前記第１および第２押圧部に形成された複数の突起が、多角錐台形状突起、円錐台形状突起または半球状突起であることを特徴とする請求項１乃至請求項７のいずれか１項に記載の超音波接合具。The plurality of protrusions formed on the first and second pressing portions are polygonal frustum-shaped protrusions, truncated cone-shaped protrusions, or hemispherical protrusions, respectively. The ultrasonic connector according to 1. 半導体チップの上面電極とリードフレームのリード端子に接続導体を超音波接合する工程を有する半導体装置の製造方法であって、
前記半導体チップの上面電極と接続導体との接合部を押圧する第１押圧部と、前記第１押圧部と異なる平面に位置し、且つ前記リードフレームのリード端子と前記接続導体との接合部を押圧する第２押圧部と、前記第１および第２押圧部に形成された複数の突起とを有する超音波接合具を用いて、
前記半導体チップの上面電極とこの上面電極の平面と異なる平面に位置する前記リードフレームのリード端子とに跨って載置された板または帯状の前記接続導体を前記上面電極と前記リード端子に対して同時に超音波接合することを特徴とする半導体装置の製造方法。A method of manufacturing a semiconductor device comprising a step of ultrasonically bonding a connection conductor to an upper surface electrode of a semiconductor chip and a lead terminal of a lead frame,
A first pressing portion that presses a joint between the upper surface electrode of the semiconductor chip and a connection conductor; and a joint between the lead terminal of the lead frame and the connection conductor that is located on a different plane from the first pressing portion. Using an ultrasonic bonding tool having a second pressing portion to be pressed and a plurality of protrusions formed on the first and second pressing portions,
A plate or strip-shaped connecting conductor placed across the upper surface electrode of the semiconductor chip and the lead terminal of the lead frame located on a plane different from the plane of the upper surface electrode is connected to the upper surface electrode and the lead terminal. A method of manufacturing a semiconductor device, wherein ultrasonic bonding is performed simultaneously. 半導体チップの上面電極とリードフレームのリード端子に接続導体を超音波接合する工程を有する半導体装置の製造方法であって、
前記半導体チップの上面電極と接続導体との接合部を押圧する第１押圧部と、前記リードフレームのリード端子と前記接続導体との接合部を押圧し、且つ前記第１押圧部と異なる押圧力を生じせしめる第２押圧部と、前記第１および第２押圧部に形成された複数の突起とを有する超音波接合具を用いて、
前記半導体チップの上面電極とこの上面電極の材質と異なる材質からなる前記リードフレームのリード端子とに跨って載置された板または帯状の前記接続導体を前記上面電極と前記リード端子に対して同時に超音波接合することを特徴とする半導体装置の製造方法。A method of manufacturing a semiconductor device comprising a step of ultrasonically bonding a connection conductor to an upper surface electrode of a semiconductor chip and a lead terminal of a lead frame,
A first pressing portion that presses a bonding portion between the upper surface electrode of the semiconductor chip and the connection conductor; and a pressing force that presses the bonding portion between the lead terminal of the lead frame and the connection conductor and is different from the first pressing portion. Using an ultrasonic bonding tool having a second pressing portion that causes a plurality of protrusions and a plurality of protrusions formed on the first and second pressing portions,
A plate or strip-shaped connecting conductor placed across the upper surface electrode of the semiconductor chip and the lead terminal of the lead frame made of a material different from the material of the upper surface electrode is simultaneously applied to the upper surface electrode and the lead terminal. A method for manufacturing a semiconductor device, comprising ultrasonic bonding. 前記半導体チップの上面電極と前記リードフレームのリード端子とが異なる平面を有し、且つ前記第１押圧部と前記第２押圧部とが異なる平面に位置する超音波接合具を用いることを特徴とする請求項１０記載の半導体装置の製造方法。An ultrasonic bonding tool is used in which the upper surface electrode of the semiconductor chip and the lead terminal of the lead frame have different planes, and the first pressing portion and the second pressing portion are located on different planes. A method for manufacturing a semiconductor device according to claim 10. 前記第１および第２押圧部に形成された複数の突起が、多角錐台形状突起、円錐台形状突起または半球状突起である超音波接合具を用いることを特徴とする請求項９乃至請求項１１のいずれか１項に記載の半導体装置の製造方法。The ultrasonic bonding tool according to claim 9, wherein the plurality of protrusions formed on the first and second pressing portions are polygonal frustum-shaped protrusions, truncated cone-shaped protrusions, or hemispherical protrusions. 12. A method for manufacturing a semiconductor device according to any one of 11 above.
JP2003006563A 2003-01-15 2003-01-15 Ultrasonic bonding tool and method for manufacturing semiconductor device using ultrasonic bonding tool Expired - Fee Related JP3753426B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003006563A JP3753426B2 (en) 2003-01-15 2003-01-15 Ultrasonic bonding tool and method for manufacturing semiconductor device using ultrasonic bonding tool

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003006563A JP3753426B2 (en) 2003-01-15 2003-01-15 Ultrasonic bonding tool and method for manufacturing semiconductor device using ultrasonic bonding tool

Publications (2)

Publication Number Publication Date
JP2004221294A true JP2004221294A (en) 2004-08-05
JP3753426B2 JP3753426B2 (en) 2006-03-08

Family

ID=32896891

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003006563A Expired - Fee Related JP3753426B2 (en) 2003-01-15 2003-01-15 Ultrasonic bonding tool and method for manufacturing semiconductor device using ultrasonic bonding tool

Country Status (1)

Country Link
JP (1) JP3753426B2 (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006135270A (en) * 2004-10-06 2006-05-25 Fuji Electric Holdings Co Ltd Semiconductor device and its manufacturing method
JP2006179704A (en) * 2004-12-22 2006-07-06 Sumitomo Electric Ind Ltd Semiconductor device
JP2006196629A (en) * 2005-01-13 2006-07-27 Nec Electronics Corp Semiconductor device, bonding method, and bonding ribbon
US7134588B2 (en) * 2004-09-29 2006-11-14 Fujitsu Limited Bonding tool for ultrasonic bonding and method of ultrasonic bonding
JP2008529303A (en) * 2005-01-27 2008-07-31 オーソダイン エレクトロニクス コーポレイション Ribbon bonding tool and rebonding method
JP2009147103A (en) * 2007-12-14 2009-07-02 Renesas Technology Corp Semiconductor device and manufacturing method of same
JP2009194154A (en) * 2008-02-14 2009-08-27 Toshiba Corp Ultrasonic joining apparatus and method of manufacturing semiconductor device
US7804160B2 (en) 2004-11-09 2010-09-28 Kabushiki Kaisha Toshiba Ultrasonic bonding equipment for manufacturing semiconductor device, semiconductor device and its manufacturing method
JP2011135048A (en) * 2009-11-26 2011-07-07 Kyocera Corp Solar cell module, and device for manufacturing the same
JP2012129467A (en) * 2010-12-17 2012-07-05 Mitsubishi Electric Corp Semiconductor device manufacturing method, ultrasonic bonding device and semiconductor device
WO2017157680A1 (en) * 2016-03-14 2017-09-21 Siemens Aktiengesellschaft Semiconductor module and method for the production thereof
US10396317B2 (en) * 2011-05-30 2019-08-27 Lg Chem, Ltd. Ultrasonic welding apparatus and secondary battery with enhanced electrode structure
CN110293308A (en) * 2014-08-11 2019-10-01 三星Sdi株式会社 Ultrasonic welding device, the method and rechargeable battery for manufacturing rechargeable battery
CN118543951A (en) * 2024-08-01 2024-08-27 瑞浦兰钧能源股份有限公司 Ultrasonic welding device and ultrasonic welding method

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7134588B2 (en) * 2004-09-29 2006-11-14 Fujitsu Limited Bonding tool for ultrasonic bonding and method of ultrasonic bonding
JP2006135270A (en) * 2004-10-06 2006-05-25 Fuji Electric Holdings Co Ltd Semiconductor device and its manufacturing method
JP4586508B2 (en) * 2004-10-06 2010-11-24 富士電機システムズ株式会社 Semiconductor device and manufacturing method thereof
US7804160B2 (en) 2004-11-09 2010-09-28 Kabushiki Kaisha Toshiba Ultrasonic bonding equipment for manufacturing semiconductor device, semiconductor device and its manufacturing method
JP2006179704A (en) * 2004-12-22 2006-07-06 Sumitomo Electric Ind Ltd Semiconductor device
JP2006196629A (en) * 2005-01-13 2006-07-27 Nec Electronics Corp Semiconductor device, bonding method, and bonding ribbon
JP4526957B2 (en) * 2005-01-13 2010-08-18 ルネサスエレクトロニクス株式会社 Semiconductor device, bonding method and bonding ribbon
JP4662497B2 (en) * 2005-01-27 2011-03-30 オーソダイン エレクトロニクス コーポレイション Ribbon bonding tool and rebonding method
JP2008529303A (en) * 2005-01-27 2008-07-31 オーソダイン エレクトロニクス コーポレイション Ribbon bonding tool and rebonding method
US7934633B2 (en) 2005-01-27 2011-05-03 Orthodyne Electronics Corporation Ribbon bonding tool and process
US7909228B2 (en) 2005-01-27 2011-03-22 Orthodyne Electronics Corporation Ribbon bonding tool and process
JP2009147103A (en) * 2007-12-14 2009-07-02 Renesas Technology Corp Semiconductor device and manufacturing method of same
JP2009194154A (en) * 2008-02-14 2009-08-27 Toshiba Corp Ultrasonic joining apparatus and method of manufacturing semiconductor device
JP2011135048A (en) * 2009-11-26 2011-07-07 Kyocera Corp Solar cell module, and device for manufacturing the same
JP2012129467A (en) * 2010-12-17 2012-07-05 Mitsubishi Electric Corp Semiconductor device manufacturing method, ultrasonic bonding device and semiconductor device
US10396317B2 (en) * 2011-05-30 2019-08-27 Lg Chem, Ltd. Ultrasonic welding apparatus and secondary battery with enhanced electrode structure
CN110293308A (en) * 2014-08-11 2019-10-01 三星Sdi株式会社 Ultrasonic welding device, the method and rechargeable battery for manufacturing rechargeable battery
CN110293308B (en) * 2014-08-11 2021-11-09 三星Sdi株式会社 Ultrasonic welding device, method of manufacturing rechargeable battery, and rechargeable battery
WO2017157680A1 (en) * 2016-03-14 2017-09-21 Siemens Aktiengesellschaft Semiconductor module and method for the production thereof
CN118543951A (en) * 2024-08-01 2024-08-27 瑞浦兰钧能源股份有限公司 Ultrasonic welding device and ultrasonic welding method
CN118543951B (en) * 2024-08-01 2024-10-18 瑞浦兰钧能源股份有限公司 Ultrasonic welding device and ultrasonic welding method

Also Published As

Publication number Publication date
JP3753426B2 (en) 2006-03-08

Similar Documents

Publication Publication Date Title
CN107615464B (en) Method for manufacturing power semiconductor device and power semiconductor device
JP3753426B2 (en) Ultrasonic bonding tool and method for manufacturing semiconductor device using ultrasonic bonding tool
JP5696780B2 (en) Semiconductor device and manufacturing method thereof
US20100007009A1 (en) Semiconductor package and method for processing and bonding a wire
TWI250622B (en) Semiconductor package having high quantity of I/O connections and method for making the same
TWI351750B (en) Stack package having reduced electrical connection
US20050104166A1 (en) Semiconductor device and manufacturing method thereof
KR100721280B1 (en) A method of forming semiconductor chip assembly and an apparatus for forming wire bonds from circuitry on a substrate to a semiconductor chip
JP2010040615A (en) Semiconductor device
JPH0636852A (en) Method for connecting terminal to printed wiring board
JP5566296B2 (en) Manufacturing method of semiconductor device
JP4374040B2 (en) Semiconductor manufacturing equipment
JP2006135270A (en) Semiconductor device and its manufacturing method
JP4430062B2 (en) IC chip mounting package manufacturing method
JP2000196005A (en) Semiconductor device
JP4601141B2 (en) Semiconductor device manufacturing method and semiconductor device
EP0999586A2 (en) Semiconductor device and method of producing same
JP2003318216A (en) Wire bonding method
JP4550503B2 (en) Semiconductor device
JP3991649B2 (en) Semiconductor device manufacturing method and semiconductor device
JP2005011899A (en) Lead frame and electronic component using the same
JP2004207291A (en) Semiconductor device and its manufacturing method, circuit board, and electronic equipment
JP4326385B2 (en) Semiconductor device
JP2004119670A (en) Semiconductor device using power element
JPH0729925A (en) Semiconductor device and its manufacture

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20041005

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20050415

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20050606

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20050727

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050729

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050926

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20051018

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20051117

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20051209

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20051212

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091222

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091222

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101222

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111222

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121222

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121222

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131222

Year of fee payment: 8

LAPS Cancellation because of no payment of annual fees