JP2004220591A - Card and entry system using card - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a highly functional electronic card ensuring a security by preventing a counterfeiting such as a substitution of a face photograph and displaying an image other than the face photograph. <P>SOLUTION: This card having a display device and a thin-film integrated circuit is characterized in that the drive of the display device is controlled by the thin-film integrated circuit, a semiconductor device used for the thin-film integrated circuit and the display device is formed by using a crystal semiconductor film, the thin-film integrated circuit and the display device are sealed with resin between a first substrate and a second substrate possessed by the card and the first substrate and the second substrate are plastic substrates. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

  The present invention relates to a card typified by an electronic card having a built-in integrated circuit such as a memory and a microprocessor (CPU), and further relates to a transaction entry system when the electronic card is used as a cash card.

  Whereas a magnetic card of a magnetic recording type can record only a few tens of bytes of data, an electronic card (IC card) with a built-in semiconductor memory can record data of about 5 KB or more. However, it is possible to secure a remarkably large capacity. In addition, there is a merit that there is no danger that the data is read by a physical method such as putting iron sand on the card like a magnetic card, and that the stored data is not easily falsified.

  Note that cards represented by an electronic card include a flexible semi-hard card such as an ID card, a plastic card, or the like, which can be used instead of an identification card.

  In recent years, with the addition of a memory and a CPU, IC cards have become even more sophisticated, and are used for identification cards such as cash cards, credit cards, prepaid cards, consultation tickets, student IDs and employee IDs. , Commuter pass, membership card and so on. As an example of the enhancement of functions, Patent Literature 1 described below describes an IC card equipped with a display device capable of displaying simple characters and numbers, and a keyboard for inputting numbers.

Japanese Patent Publication No. 2-7105

  As described in Patent Literature 1, by adding a function to an IC card, a new use method becomes possible. At present, electronic commerce using telecommunications, telecommuting, telemedicine, distance education, computerization of administrative services, automatic toll collection on expressways, video distribution services, etc. are being put into practical use. It is considered that IC cards are used in a wide range of fields.

  With the widespread use, unauthorized use of IC cards has become a serious problem that cannot be ignored, and how to increase the reliability of personal authentication when using IC cards is a future task.

  One of the measures to prevent unauthorized use is the posting of a face photo on an IC card. By posting a face photograph, a third party can visually authenticate the user when using the IC card, unless the terminal device is an unattended terminal device such as an ATM. Further, even when a security camera for monitoring a user's face at a short distance is not installed, unauthorized use can be effectively prevented.

  However, a face photograph is generally transferred to an IC card by a printing method, and there is a pitfall that replacement can be performed relatively easily by forgery.

  The thickness of the IC card is generally as thin as 0.7 mm. Therefore, in a case where the area in which the integrated circuit is mounted is limited, it is necessary to mount more integrated circuits having a larger circuit scale and a larger memory capacity in the limited volume in order to achieve higher functionality.

  Therefore, an object of the present invention is to propose a more sophisticated IC card that can secure security by preventing counterfeiting such as replacement of a face photo and can display an image other than a face photo.

  In the present invention, in addition to the integrated circuit, a display device having a thickness small enough to fit in an IC card is mounted in the IC card. Specifically, an integrated circuit and a display device are manufactured by using the following method.

  First, a metal film is formed on the first substrate, and an extremely thin metal oxide film having a thickness of several nm is formed by oxidizing the surface of the metal film. Next, an insulating film and a semiconductor film are formed on the metal oxide film so as to be sequentially stacked. Then, a semiconductor element used for an integrated circuit and a display device is manufactured using the semiconductor film. In this specification, the above-mentioned integrated circuit used in the present invention is hereinafter referred to as a thin film integrated circuit in order to distinguish it from an integrated circuit formed using an existing silicon wafer.

  In the present invention, the metal oxide film is crystallized by the heat treatment performed in the step of forming the semiconductor element. By crystallization, the brittleness of the metal oxide film is increased, and the substrate is easily separated from the semiconductor element. Note that the heat treatment performed in the step of forming the semiconductor element does not necessarily have to serve also as the step of crystallizing the metal oxide film, but a card substrate or a cover material to be bonded later, and a facing liquid used in a liquid crystal display device. When the substrate or the like is inferior in heat resistance, it is desirable to perform a heat treatment before bonding them.

  Then, after forming the semiconductor element, before manufacturing a display element used for a display device, a second substrate is attached so as to cover the semiconductor element, and the semiconductor element is placed between the first substrate and the second substrate. Make a sandwiched state.

  Then, a third substrate is attached to a side of the first substrate opposite to the side on which the semiconductor element is formed in order to reinforce the rigidity of the first substrate. When the first substrate has a higher rigidity than the second substrate, the semiconductor element is less likely to be damaged when the first substrate is peeled, and can be smoothly peeled. However, the third substrate does not necessarily need to be bonded when the first substrate is sufficiently rigid when the first substrate is later peeled off from the semiconductor element.

  Then, the first substrate and the third substrate are separated from the semiconductor element. Due to the peeling, a portion separating between the metal film and the metal oxide film, a portion separating between the insulating film and the metal oxide film, and a portion separating the metal oxide film itself into both are generated. In any case, the semiconductor element is peeled off from the first substrate so as to stick to the second substrate side.

  After peeling the first substrate, the semiconductor element is mounted on a substrate for an IC card (hereinafter, referred to as a card substrate), and the second substrate is peeled. After that, a display element provided in the display device is manufactured. After the display element is manufactured, a substrate for protecting the semiconductor element and the display element (hereinafter, referred to as a cover material) is attached so as to cover the semiconductor element, an integrated circuit using the display element, and a display device. A state is created in which the circuit and the display device are sandwiched between the card substrate and the cover material.

  The thickness of the card substrate and the cover material is preferably such that the total film thickness does not hinder the thinning of the IC card itself, and more specifically, it is preferably about several hundred μm.

  Although the IC card may be completed in this state, the card substrate and the cover material may be sealed with resin to increase the mechanical strength of the IC card.

  The display element of the display device may be manufactured after mounting, but may be manufactured before mounting. In this case, the cover material may be attached after the second substrate is separated, or if the thickness of the second substrate does not matter, the second substrate is attached without being separated. It may be completed as it is.

  In the case where a display element is manufactured after mounting, in a manufacturing process of a liquid crystal display device, for example, a pixel electrode of a liquid crystal cell electrically connected to a TFT which is one of semiconductor elements or the pixel electrode is covered. After an alignment film is formed, mounting is performed, and then, a counter substrate that is separately manufactured is attached to the substrate, and liquid crystal is injected to complete a display device. Note that a counter electrode, a color filter, a polarizing plate, an alignment film, and the like may be formed on the surface of the cover material and used instead of the counter substrate.

  Alternatively, a separately manufactured thin film integrated circuit may be attached and the thin film integrated circuits may be stacked to increase the circuit scale or the memory capacity. In the IC card of the present invention, since the thin film integrated circuits are significantly thinner than those manufactured by using a silicon wafer, more thin film integrated circuits can be stacked and mounted in a predetermined volume of the IC card. . Therefore, the circuit scale and the memory capacity can be increased while suppressing the area occupied in the layout of the thin film integrated circuit, and the IC card can be further enhanced. For connection between the laminated thin film integrated circuits, a known connection method such as a flip chip method, a TAB (Tape Automated Bonding) method, or a wire bonding method can be used.

  Alternatively, an integrated circuit using a silicon wafer may be mounted and connected to a thin film integrated circuit. An integrated circuit using a silicon wafer includes an inductor, a capacitor, a resistor, and the like.

  Note that the stacked thin film integrated circuit or the integrated circuit using the silicon wafer is not limited to the form directly mounted as a bare chip, but may be mounted on an interposer, packaged, and then mounted. The package can be any known form such as DIP (Dual In-line Package), QFP (Quad Flat Package), SOP (Small Outline Package) as well as CSP (Chip Size Package) and MCP (Multi Chip Package). It is.

  When a plurality of IC cards are formed from one large substrate, dicing is performed on the way, and the thin film integrated circuit and the display device are separated from each other for each IC card.

  In the present invention, while the thickness of an integrated circuit made of a silicon wafer is about 50 μm, the total thickness is 1 μm or more and 5 μm or less, typically using a thin semiconductor film having a thickness of 500 nm or less. Can form a remarkably thin thin film integrated circuit of about 2 μm. In addition, the thickness of the display device can be set to 0.5 mm, more preferably, to about 0.02 mm. Therefore, the display device can be mounted on an IC card having a thickness of 0.05 mm or more and 1.5 mm or less.

  Further, according to the present invention, a large-sized glass substrate can be used at a lower cost than a silicon wafer, so that thin-film integrated circuits can be mass-produced at a lower cost and at a higher throughput, and the production cost is dramatically reduced. be able to. Further, since the substrate can be used repeatedly, the cost of the thin film integrated circuit can be reduced.

  Further, unlike an integrated circuit made of a silicon wafer, there is no need to perform a back-grinding process which causes cracks and polishing marks. Since it depends on the variation at the time, it is at most about several hundreds of nm, and can be drastically suppressed as compared with the variation of several to several tens μm due to the back grinding process.

  In addition, since a thin film integrated circuit or a display device can be attached according to the shape of the card substrate, the degree of freedom of the shape of the IC card is increased. Therefore, for example, it is also possible to form the IC card in a shape having a curved surface so that the IC card can be attached to a cylindrical bottle or the like.

  As the display device, for example, a liquid crystal display device, a light emitting device having a light emitting element typified by an organic light emitting element in each pixel, a DMD (Digital Micromirror Device), or the like can be used. Further, the thin film integrated circuit can be provided with a microprocessor (CPU), a memory, a power supply circuit, and other digital circuits and analog circuits. Further, a driver circuit for the display device and a controller for generating a signal to be supplied to the driver circuit may be provided in the thin film integrated circuit.

  Note that the present invention is not limited to the card alone, and includes a portable recording medium which has both the thin film integrated circuit and the display device as described above and can transmit and receive data to and from the host.

  In the present invention, while the thickness of an integrated circuit made of a silicon wafer is about 50 μm, the total thickness is 1 μm or more and 5 μm or less, typically using a thin semiconductor film having a thickness of 500 nm or less. Can form a remarkably thin thin film integrated circuit of about 2 μm. In addition, the thickness of the display device can be set to 0.5 mm, more preferably, to about 0.02 mm. Therefore, the display device can be mounted on an IC card having a thickness of 0.05 mm or more and 1.5 mm or less.

  Further, according to the present invention, a large-sized glass substrate can be used at a lower cost than a silicon wafer, so that thin-film integrated circuits can be mass-produced at a lower cost and at a higher throughput, and the production cost is dramatically reduced. be able to. Further, since the substrate can be used repeatedly, the cost of the thin film integrated circuit can be reduced.

  Further, unlike an integrated circuit made of a silicon wafer, there is no need to perform a back-grinding process which causes cracks and polishing marks. Since it depends on the variation at the time, it is at most about several hundreds of nm, and can be drastically suppressed as compared with the variation of several to several tens μm due to the back grinding process.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, it is easily understood by those skilled in the art that the present invention can be implemented in many different modes, and that the form and details can be variously changed without departing from the spirit and scope of the present invention. Is done. Therefore, the present invention should not be interpreted as being limited to the description in this embodiment mode.

  FIG. 1A shows a top view of the IC card of the present invention. The IC card shown in FIG. 1A is of a non-contact type which transmits and receives data to and from a reader / writer of a terminal device in a non-contact manner. Reference numeral 101 denotes a card body, and 102 corresponds to a pixel portion of a display device mounted on the card body 101.

  FIG. 1B shows a configuration of a card substrate 104 sealed inside the card main body 101 shown in FIG. 1A. A display device 105 and a thin film integrated circuit 106 are formed on one surface of the card substrate 104. The display device 105 and the thin film integrated circuit 106 are electrically connected by a wiring 108.

  The antenna coil 103 electrically connected to the thin film integrated circuit 106 is formed on the card substrate 104. With the antenna coil 103, data can be transmitted and received between the terminal device and the terminal device in a non-contact manner using electromagnetic induction. Therefore, the IC card is less likely to be damaged by physical wear as compared with the contact type.

  Although FIG. 1B illustrates an example in which the antenna coil 103 is formed over the card substrate 104, an antenna coil that is separately manufactured may be mounted on the card substrate 104. For example, a coil obtained by winding a copper wire or the like in a coil shape and pressing the copper wire between two plastic films having a thickness of about 100 μm can be used as the antenna coil.

  In FIG. 1B, only one antenna coil 103 is used for one IC card, but a plurality of antenna coils 103 may be used as shown in FIG. 1C.

  Next, a method for manufacturing a thin film integrated circuit and a display device is described. Note that in this embodiment, a TFT is described as an example of a semiconductor element; however, a semiconductor element included in a thin film integrated circuit and a display device is not limited thereto, and any circuit element can be used. For example, in addition to a TFT, a storage element, a diode, a photoelectric conversion element, a resistor, a coil, a capacitor, an inductor, and the like are typically given.

  First, as shown in FIG. 5A, a metal film 501 is formed over a first substrate 500 by a sputtering method. Here, tungsten is used for the metal film 501, and the thickness is 10 nm to 200 nm, preferably 50 nm to 75 nm. Note that in this embodiment, the metal film 501 is directly formed over the first substrate 500; however, the metal film 501 is covered with an insulating film such as silicon oxide, silicon nitride, A film 501 may be formed.

After the formation of the metal film 501, an oxide film 502 which forms an insulating film is formed so as to be stacked without exposure to the air. Here, a silicon oxide film is formed to have a thickness of 150 nm to 300 nm as the oxide film 502. Note that when the sputtering method is used, a film is formed also on the end surface of the first substrate 500. Therefore, in order to prevent the oxide film 502 from remaining on the first substrate 500 side during separation in a later step, the metal film 501 and the oxide film 502 formed on the end surfaces are subjected to O ₂ ashing. It is preferable to selectively remove such as above.

In addition, when the oxide film 502 is formed, pre-sputtering is performed as a stage prior to sputtering, in which plasma is generated by shutting off the target and the substrate with a shutter. The pre-sputtering is performed while maintaining the flow rate of Ar at 10 sccm and O ₂ at 30 sccm, the temperature of the first substrate 500 at 270 ° C., and the deposition power at 3 kW. By pre-sputtering, a very thin metal oxide film 503 of several nm (here, 3 nm) is formed between the metal film 501 and the oxide film 502. The metal oxide film 503 is formed by oxidizing the surface of the metal film 501. Therefore, in this embodiment, the metal oxide film 503 is formed using tungsten oxide.

  Although the metal oxide film 503 is formed by pre-sputtering in this embodiment mode, the present invention is not limited to this. For example, oxygen or an inert gas such as Ar may be added to oxygen, and the surface of the metal film 501 may be intentionally oxidized by plasma to form the metal oxide film 503.

  Next, after the oxide film 502 is formed, a base film 504 which forms an insulating film is formed by a PCVD method. Here, as the base film 504, a silicon oxynitride film is formed to have a thickness of about 100 nm. After forming the base film 504, the semiconductor film 505 is formed without exposure to the air. The thickness of the semiconductor film 505 is 25 to 100 nm (preferably 30 to 60 nm). Note that the semiconductor film 505 may be an amorphous semiconductor or a polycrystalline semiconductor. As the semiconductor, not only silicon but also silicon germanium can be used. When silicon germanium is used, the concentration of germanium is preferably about 0.01 to 4.5 atomic%.

  Next, the semiconductor film 505 is crystallized by a known technique. Known crystallization methods include a thermal crystallization method using an electric heating furnace, a laser crystallization method using laser light, and a lamp annealing crystallization method using infrared light. Alternatively, a crystallization method using a catalytic element can be used according to the technique disclosed in Japanese Patent Application Laid-Open No. Hei 7-130652.

  In this embodiment mode, the semiconductor film 505 is crystallized by laser crystallization. Before laser crystallization, thermal annealing at 500 ° C. for one hour is performed on the semiconductor film in order to increase the resistance of the semiconductor film to laser light. In this embodiment mode, by this heat treatment, the brittleness of the metal oxide film 503 is increased, so that the first substrate can be easily separated later. By the crystallization, the metal oxide film 503 is easily broken at the grain boundary, and the brittleness can be increased. In the case of this embodiment mode, the crystallization of the metal oxide film 503 is preferably performed by heat treatment at 420 to 550 ° C. for about 0.5 to 5 hours.

Then, by using a solid-state laser capable of continuous oscillation and irradiating laser light of the second to fourth harmonics of the fundamental wave, a crystal having a large grain size can be obtained. For example, typically, it is desirable to use the second harmonic (532 nm) or the third harmonic (355 nm) of a Nd: YVO ₄ laser (fundamental wave 1064 nm). Specifically, the laser light emitted from the continuous wave YVO ₄ laser is converted into a harmonic by a non-linear optical element, and a laser light with an output of 10 W is obtained. There is also a method of emitting harmonics using a nonlinear optical element. Then, the semiconductor film 505 is preferably formed into a rectangular or elliptical laser beam on an irradiation surface by an optical system, and is irradiated with the laser beam. At this time, the energy density of approximately 0.01 to 100 MW / cm ² (preferably 0.1 to 10 MW / cm ²⁾ is required. Then, irradiation is performed at a scanning speed of about 10 to 2000 cm / s.

  The laser crystallization may be performed by irradiating a continuous oscillation fundamental wave laser beam and a continuous oscillation harmonic laser beam, or a continuous oscillation fundamental wave laser beam and a pulse oscillation harmonic laser beam. Irradiation with light may be performed.

  Note that laser light irradiation may be performed in an inert gas atmosphere such as a rare gas or nitrogen. Thus, roughness of the semiconductor surface due to laser light irradiation can be suppressed, and variation in threshold voltage caused by variation in interface state density can be suppressed.

  By the above-described irradiation of the semiconductor film 505 with the laser light, a semiconductor film 506 with higher crystallinity is formed. Note that the semiconductor film 506 which is a polycrystalline semiconductor film may be formed in advance by a sputtering method, a plasma CVD method, a thermal CVD method, or the like.

Next, as shown in FIG. 5B, the semiconductor film is patterned to form island-shaped semiconductor films 507 and 508, and various semiconductors represented by TFTs are formed using the island-shaped semiconductor films 507 and 508. An element is formed. Note that in this embodiment, the base film 504 is in contact with the island-shaped semiconductor films 507 and 508; however, depending on a semiconductor element, an electrode or the like is provided between the base film 504 and the island-shaped semiconductor films 507 and 508. An insulating film or the like may be formed. For example, in the case of a bottom-gate TFT which is one of the semiconductor elements, a gate electrode and a gate insulating film are formed between the base film 504 and the island-shaped semiconductor films 507 and 508.

  In this embodiment mode, top-gate TFTs 509 and 510 are formed using the island-shaped semiconductor films 507 and 508 (FIG. 5C). Specifically, a gate insulating film 511 is formed so as to cover the island-shaped semiconductor films 507 and 508. Then, a conductive film is formed over the gate insulating film 511 and patterned to form gate electrodes 512 and 513. Further, in this embodiment mode, the antenna coil 506 is formed by patterning the conductive film. Then, using the gate electrodes 512 and 513 and / or a resist formed and patterned as a mask, an impurity for imparting n-type is added to the island-shaped semiconductor films 507 and 508, and the source region, the drain region, and the An LDD region and the like are formed. Note that here, the TFTs 509 and 510 are both n-type, but in the case of a p-type TFT, an impurity imparting p-type conductivity is added.

  The TFTs 509 and 510 can be formed by the above series of steps. Note that the method for manufacturing the TFT is not limited to the above-described steps. Further, the electrical connection between the antenna coil 506 and the thin film integrated circuit is not limited to the above-described embodiment.

  Next, a first interlayer insulating film 514 is formed to cover the TFTs 509 and 510 and the antenna coil 506. Then, after forming contact holes in the gate insulating film 511 and the first interlayer insulating film 514, wirings 515 to 518 connected to the TFTs 509 and 510 and the antenna coil 506 through the contact holes are formed in the first interlayer insulating film 514. Is formed so as to be in contact with.

  The wiring 515 electrically connects the TFT 509 used for the thin film integrated circuit and the antenna coil 506. Note that the antenna coil 506 is not necessarily formed using the same conductive film as the gate electrode, and may be formed using the same conductive film as the wirings 515 to 518.

  Further, the TFT 510 used as a switching element in the pixel portion of the display device is electrically connected to the wiring 518; part of the wiring 518 also functions as a pixel electrode of a liquid crystal cell formed later.

  Next, a spacer 519 using an insulating film is formed. Then, an alignment film 520 is formed to cover the wiring 518 and the spacer 519, and rubbing is performed. Note that the alignment film 520 may be formed so as to overlap with the thin film integrated circuit or the antenna coil 506.

  Next, a sealant 521 for sealing the liquid crystal is formed. Then, as shown in FIG. 6A, the liquid crystal 522 is dropped on a region surrounded by the sealant 521. Then, as shown in FIG. 6B, a counter substrate 523 formed separately is attached using a sealant 521. A filler may be mixed in the sealing material. The counter substrate 523 has a thickness of about several hundred μm, and includes a counter electrode 524 made of a transparent conductive film and an alignment film 526 subjected to a rubbing process. In addition to these, a color filter, a shielding film for preventing disclination, and the like may be formed. Further, a polarizing plate 527 is attached to a surface of the opposite substrate 523 opposite to the surface on which the opposite electrode 524 is formed.

  A portion where the counter electrode 524, the liquid crystal 522, and the wiring 518 overlap corresponds to a liquid crystal cell 528. When the liquid crystal cell 528 is completed, the display device 529 is completed. Note that although the thin film integrated circuit 530 and the counter substrate 523 are not overlapped in this embodiment mode, the counter substrate 523 and the thin film integrated circuit 530 may be set to overlap. In that case, in order to increase the mechanical strength of the IC card, an insulating resin may be filled between the counter substrate and the thin film integrated circuit.

  Note that in this embodiment mode, liquid crystal is sealed using a dispenser method (dropping method), but the present invention is not limited to this. A dip type (pumping type) in which liquid crystal is sealed using a capillary phenomenon after bonding the opposing substrates may be used.

  Next, as illustrated in FIG. 7A, a protective layer 531 is formed to cover the thin film integrated circuit 530 and the display device 529. The protective layer 531 can protect the thin film integrated circuit 530 and the display device 529 when the second substrate is bonded or separated later, and can be removed after the second substrate is separated. Is used. For example, the protective layer 531 can be formed by applying an epoxy-based, acrylate-based, or silicone-based resin that is soluble in water or alcohols over the entire surface.

  In this embodiment, a water-soluble resin (manufactured by Toagosei Co., Ltd .: VL-WSHL10) is applied by spin coating so as to have a film thickness of 30 μm, and after exposure for 2 minutes is performed for temporary curing, UV light is applied from the back surface. Exposure is performed for 2.5 minutes and 10 minutes from the surface, for a total of 12.5 minutes, followed by main curing to form a protective layer 531.

When a plurality of organic resins are stacked, there is a possibility that the organic resins may partially dissolve during application or baking, or may have excessively high adhesion, depending on the solvent used. Therefore, when both the first interlayer insulating film 514 and the protective layer 531 are made of an organic resin soluble in the same solvent, the first interlayer insulating film 514 is removed so that the protective layer 531 can be removed smoothly in a later step. Preferably, an inorganic insulating film (SiN _x film, SiN _x O _y film, AlN _x film, or AlN _x O _y film) is formed so as to cover 514.

  Next, a process of partially reducing the adhesion between the metal oxide film 503 and the oxide film 502 or the adhesion between the metal oxide film 503 and the metal film 501 to form a portion which triggers the start of peeling. Perform Specifically, pressure is locally applied from the outside along the periphery of the region to be peeled, thereby damaging a part of the metal oxide film 503 or a part near the interface. In this embodiment mode, a hard needle such as a diamond pen is pressed perpendicularly to the vicinity of the end of the metal oxide film 503 and moved along the metal oxide film 503 with a load applied. Preferably, a scriber device is used, the pressing amount is set to 0.1 mm to 2 mm, and the pressing may be performed by applying pressure. As described above, by forming a portion having reduced adhesion, which is a trigger for starting the peeling before performing the peeling, it is possible to reduce defects in a subsequent peeling step and to improve the yield. .

  Next, the second substrate 533 is attached to the protective layer 531 using the double-sided tape 532, and the third substrate 535 is attached to the first substrate 500 using the double-sided tape 534. Note that an adhesive may be used instead of the double-sided tape. For example, by using an adhesive which is separated by ultraviolet light, a load applied to the semiconductor element when the second substrate is separated can be reduced. The third substrate 535 is attached in order to prevent the first substrate 500 from being damaged in a later separation step. As the second substrate 533 and the third substrate 535, a substrate having higher rigidity than the first substrate 500, for example, a quartz substrate or a semiconductor substrate is preferably used.

  Next, the metal film 501 and the oxide film 502 are physically separated. The peeling is started from a region where the adhesion of the metal oxide film 503 to the metal film 501 or the oxide film 502 is partially reduced in the previous step.

  By peeling, a portion separated between the metal film 501 and the metal oxide film 503, a portion separated between the oxide film 502 and the metal oxide film 503, and a portion separated from the metal oxide film 503 itself are separated. Occurs. Then, the semiconductor elements (TFTs 509 and 510 in this case) are separated from the second substrate 533 side, and the first substrate 500 and the metal film 501 are separated from each other while being bonded to the third substrate 535 side. The peeling can be performed with a relatively small force (for example, a human force, a wind pressure of a gas blown from a nozzle, an ultrasonic wave, or the like). FIG. 7B shows the state after peeling.

  Next, the card substrate 540 is bonded to the oxide layer 502 to which the metal oxide film 503 is partially attached with an adhesive 539 (FIG. 8A). In this bonding, the adhesive force between the oxide layer 502 and the card substrate 540 by the adhesive 539 is higher than the adhesive force between the second substrate 533 and the protective layer 531 by the double-sided tape 532. Therefore, it is important to select a material for the adhesive 539.

  Examples of the adhesive 539 include various curable adhesives such as a reactive curable adhesive, a thermosetting adhesive, a photocurable adhesive such as an ultraviolet curable adhesive, and an anaerobic adhesive. More preferably, the adhesive 539 containing a powder or a filler made of silver, nickel, aluminum, or aluminum nitride also preferably has high thermal conductivity.

  Note that if the metal oxide film 503 remains on the surface of the oxide film 502, the adhesion to the card substrate 540 may be deteriorated. Therefore, the metal oxide film 503 is completely removed by etching or the like, and then adhered to the card substrate. The adhesion may be enhanced.

  Next, as shown in FIG. 8B, the double-sided tape 532 and the second substrate 533 are sequentially or simultaneously peeled off from the protective layer 531.

Then, the protective layer 531 is removed as shown in FIG. Here, since a water-soluble resin is used for the protective layer 531, it is dissolved in water and removed. When the remaining protective layer 531 causes a failure, it is preferable to remove the remaining protective layer 531 by performing a cleaning process or an O ₂ plasma process on the surface after the removal.

  Next, as shown in FIG. 9B, the thin film integrated circuit 530 and the display device 529 are covered with a resin 542, and a cover member 543 for protecting the thin film integrated circuit 530 and the display device 529 is provided. While the IC card may be completed in this state, the IC card may be sealed with a sealing material so as to cover the card substrate 540 and the cover member 543. Further, the cover member 543 is not necessarily provided, and the card substrate 540 may be directly sealed with a sealing material.

  For the sealing of the IC card, generally used materials can be used.For example, polymer materials such as polyester, acrylic acid, polyvinyl acetate, propylene, vinyl chloride, acrylonitrile butadiene styrene resin, and polyethylene terephthalate can be used. It can be used. At the time of sealing, the pixel portion of the display device is exposed, and in the case of a contact type IC card, the connection terminal is also exposed in addition to the pixel portion. By sealing, an IC card having an appearance as shown in FIG. 1A can be formed.

  Enhancing the mechanical strength of an IC card, dissipating heat generated from a thin film integrated circuit or a display device, or blocking electromagnetic noise from a circuit adjacent to the IC card by sealing with a sealing material Can be.

  Note that a plastic substrate can be used for the card substrate 540, the cover member 543, and the counter substrate 523. ARTON made of norbornene resin having a polar group and manufactured by JSR can be used as the plastic substrate. In addition, polyethylene terephthalate (PET), polyethersulfone (PES), polyethylene naphthalate (PEN), polycarbonate (PC), nylon, polyetheretherketone (PEEK), polysulfone (PSF), polyetherimide (PEI), polyether A plastic substrate such as arylate (PAR), polybutylene terephthalate (PBT), or polyimide can be used. The card substrate 540 desirably has a high thermal conductivity of about 2 to 30 W / mK in order to diffuse heat generated in a thin film integrated circuit or a display device.

  Note that in this embodiment mode, tungsten is used for the metal film 501; however, the metal film is not limited to this material in the present invention. Any material may be used as long as a metal oxide film 503 is formed on its surface and the metal can be removed by crystallizing the metal oxide film 503 so that the substrate can be peeled off. For example, in addition to W, TiN, WN, Mo, or the like can be used. When these alloys are used as a metal film, the optimal temperature of the heat treatment at the time of crystallization differs depending on the composition ratio. Therefore, by adjusting the composition ratio, heat treatment can be performed at a temperature that does not hinder the manufacturing process of the semiconductor element, and the options of the semiconductor element process are not easily limited.

  During laser crystallization, each thin film integrated circuit is formed in an area that fits within the width in the direction perpendicular to the scanning direction of the beam spot of the laser beam, so that the thin film integrated circuit can be positioned at both ends of the long axis of the beam spot. A semiconductor film having at least almost no crystal grain boundaries can be used as a semiconductor element in a thin film integrated circuit by preventing the film from crossing a region (edge) having poor crystallinity formed in the semiconductor device.

By the above manufacturing method, a dramatically thin film integrated circuit with a total thickness of 1 μm or more and 5 μm or less, typically about 2 μm can be formed. Further, the thickness W _DP of the display device can be set to 0.5 mm, more preferably, about 0.02 mm. Therefore, the display device can be mounted on an IC card having a thickness of 0.05 mm or more and 1.5 mm or less. The thickness W _IC of the thin film integrated circuit includes not only the thickness of the semiconductor element itself but also the thickness of the insulating film provided between the metal oxide film and the semiconductor element, and the interlayer insulating film that covers the semiconductor element after it is formed. Include the thickness and.

  Note that the liquid crystal display device described in this embodiment is a reflection type, but may be a transmission type as long as a backlight can be mounted. In the case of the reflection type liquid crystal display device, the power consumed for displaying an image can be suppressed as compared with the transmission type. In the case of a transmissive liquid crystal display device, it is easy to recognize an image in a dark place, unlike the reflective liquid crystal display device.

  It is to be noted that the display device used in the present invention needs to have a resolution such that a person can be identified by a face photograph. Therefore, if it is used instead of the ID photo, it is considered that a resolution of at least about QVGA (320 × 240) is required.

  Next, an example in which a plurality of IC cards are formed using a large-sized substrate will be described. FIG. 2A illustrates a state in which a display device, an antenna coil, and an integrated circuit corresponding to a plurality of IC cards are formed over a large card substrate 201. FIG. 2A corresponds to a state before removing a protective layer and before attaching a cover material using a resin. An area 202 surrounded by a broken line corresponds to one IC card. When a liquid crystal display device is used as a display device, the liquid crystal may be injected by a dispenser method or a dip method. As shown in FIG. 2A, the liquid crystal injection port used in the dip method comes to an end of the card substrate. If it is not possible to use the arrangement, use the dispenser type.

  Next, as shown in FIG. 2B, a resin 203 is applied so as to cover the integrated circuit, the display device, and the antenna coil corresponding to each IC card. In FIG. 2B, the regions to which the resin 203 is applied are separated from each other so as to correspond to each IC card, but the resin 203 may be applied to the entire surface.

  Next, as shown in FIG. 2C, a cover member 204 is attached. Then, dicing is performed along the broken line 205 to separate the IC cards from each other. Although it may be completed in this state, it may be completed with a sealing material thereafter.

  FIG. 3A is a cross-sectional view taken along a broken line A-A ′ in FIG. In the cross-sectional view illustrated in FIG. 3A, an integrated circuit 208 formed of a silicon wafer is provided between a card substrate 201 and a cover member 204, in addition to the thin film integrated circuit 207 and the display device 206. An integrated circuit may include capacitors, inductors, resistors, and the like.

  Next, FIG. 3B is a cross-sectional view of an IC card having a structure different from that of FIG. In the IC card illustrated in FIG. 3B, a thin film integrated circuit 222 and a display device 223 are provided over a card substrate 221. In FIG. 3B, part of the substrate 224 which seals the display element of the display device is exposed at an opening provided in the cover member 225. The substrate 224 is formed of a material that transmits light. Specifically, for example, the substrate 224 corresponds to a counter substrate in a liquid crystal display device, and corresponds to a substrate for sealing a light emitting element in a light emitting device. A material that does not transmit light is used for the cover member 225. Note that the card substrate 221 may be made of a material that does not transmit light. With the above structure, light can be transmitted only to the pixel portion.

  Next, an embodiment of a configuration of a thin film integrated circuit and a display device in a non-contact type IC card will be described. FIG. 4 shows a block diagram of the thin film integrated circuit 401 and the display device 402 mounted on the IC card of the present invention.

  400 is an input antenna coil, and 413 is an output antenna coil. 403a is an input interface, and 403b is an output interface. Note that the number of various antenna coils is not limited to the number shown in FIG.

  The AC power supply voltage and various signals input from the terminal device by the input antenna coil 400 are demodulated or converted to DC in the input interface 403a and supplied to various circuits. Various signals output from the thin film integrated circuit 401 are modulated by the output interface 403b and sent to the terminal device by the output antenna coil 413.

  The thin film integrated circuit 401 illustrated in FIG. 4 includes a CPU 404, a ROM 405, a RAM 406, an EEPROM 407, a coprocessor 408, and a controller 409.

  The CPU 404 controls all processes of the IC card, and the ROM 405 stores various programs used in the CPU 404. The coprocessor 408 is a subprocessor that assists the main CPU 404, and the RAM 406 functions as a buffer for communication with the terminal device and is also used as a work area for data processing. Then, the EEPROM 407 stores the data input as a signal at a predetermined address.

  If image data such as a face photograph is stored in a rewritable state, the image data is stored in the EEPROM 407. If the image data is stored in a non-rewritable state, the image data is stored in the ROM 405. Further, a memory for storing image data may be separately prepared.

  The controller 409 performs data processing on a signal including image data according to the specifications of the display device 402 and supplies the signal to the display device 402 as a video signal. Further, the controller 409 generates an Hsync signal, a Vsync signal, a clock signal CLK, an AC voltage (AC Cont), and the like based on the power supply voltage and various signals input from the input interface 403a, and supplies the generated signals to the display device 402. .

  The display device 402 includes a pixel portion 410 in which a display element is provided for each pixel, a scan line driver circuit 411 for selecting a pixel provided in the pixel portion 410, and a signal for supplying a video signal to the selected pixel. A line drive circuit 412 is provided.

  FIG. 10A shows a more detailed configuration of the input interface 403a. The input interface 403a illustrated in FIG. 10A includes a rectifier circuit 420 and a demodulation circuit 421. The AC power supply voltage input from the input antenna coil 400 is rectified by the rectifier circuit 420 and supplied to various circuits in the thin film integrated circuit 401 as a DC power supply voltage. Various AC signals input from the input antenna coil 400 are demodulated in the demodulation circuit 421. Various signals whose waveforms have been shaped by demodulation are supplied to various circuits in the thin film integrated circuit 401.

  FIG. 10B shows a more detailed configuration of the output interface 403b. The output interface 403b illustrated in FIG. 10B includes a modulation circuit 423 and an amplifier 424. Various signals input to the output interface 403b from various circuits in the thin film integrated circuit 401 are modulated by the modulation circuit 423, amplified or buffered by the amplifier 424, and then sent from the output antenna coil 413 to the terminal device. .

  In this embodiment mode, an example in which an antenna coil is used as a non-contact type is shown. However, a non-contact type IC card is not limited to this, and data can be transmitted and received by light using a light-emitting element or an optical sensor. You may do it.

  Further, the IC card of the present invention is not limited to a non-contact type IC card, but may be a contact type IC card. FIG. 14A is an external view of a contact type IC card. The contact-type IC card is provided with a connection terminal 1501, and data can be transmitted and received by electrically connecting the connection terminal 1501 to a lead writer of a terminal device.

  In this embodiment, an example in which the power supply voltage is supplied from the reader / writer of the terminal device is described; however, the present invention is not limited to this. For example, as shown in FIG. 14B, a solar cell 1502 may be provided in an IC card. Further, an ultra-thin battery such as a lithium battery may be incorporated.

  Note that the configurations of the thin film integrated circuit 401 and the display device 402 shown in FIGS. 4 and 10 are merely examples, and the present invention is not limited to this configuration. The display device 402 only needs to have a function of displaying an image, and may be an active type or a passive type. Further, the thin film integrated circuit 401 only needs to have a function of supplying a signal for controlling driving of the display device 402 to the display device 402. For example, it may have a function such as GPS.

  By displaying the face photograph data on the display device in this way, it is possible to make the replacement of the face photograph more difficult than in the case where the printing method is used. Further, by storing the face photograph data in a non-rewritable memory such as a ROM, forgery can be prevented, and the security of the IC card can be further ensured. If the ROM is broken when the IC card is forcibly disassembled, forgery can be more reliably prevented.

  If a serial number is stamped on a semiconductor film or an insulating film used for a display device, for example, even if an IC card before storing image data in a ROM is illegally passed on to a third party due to theft or the like. It is possible to determine the distribution route to some extent from the serial number. In this case, it is more effective to engrave the serial number at a position where it cannot be erased unless the display device is disassembled to the extent that it cannot be restored.

  In addition, the plastic substrate has low resistance to the temperature of the heat treatment in the manufacturing process of the semiconductor element, and is difficult to use. However, in the present invention, in the manufacturing process including the heat treatment, a glass substrate or a silicon wafer having relatively high temperature resistance is used, and after the manufacturing process is completed, the semiconductor element can be transferred onto a card substrate made of plastic. Therefore, an integrated circuit or a display device can be formed over a plastic substrate which is thinner than a glass substrate or the like. The thickness of the display device formed using the glass substrate is about 2 to 3 mm at most, whereas the thickness of the display device is about 0.5 mm by using the plastic substrate in the present invention. Desirably, it can be dramatically reduced to about 0.02 mm. Therefore, the display device can be mounted on an IC card having a thickness of 0.05 mm or more and 1.5 mm or less, and high functionality of the IC card can be realized without hindering reduction in size and weight.

  In addition, according to the present invention, a significantly thinner thin film integrated circuit can be formed. By stacking the thin film integrated circuits, a thin film integrated circuit having a larger circuit scale and a larger memory capacity can be formed in a limited capacity of an IC card. Many can be installed.

  In addition, since a thin film integrated circuit or a display device can be attached according to the shape of the card substrate, the degree of freedom of the shape of the IC card is increased. Therefore, for example, it is also possible to form the IC card in a shape having a curved surface so that the IC card can be attached to a cylindrical bottle or the like.

Hereinafter, examples of the present invention will be described.

(Example 1)
Example 1 In this example, a liquid crystal material used in the case where the first substrate is peeled after a liquid crystal display device is completed will be described.

  FIG. 11 shows a cross-sectional view of the liquid crystal display device of the present embodiment. In the liquid crystal display device illustrated in FIG. 11A, a columnar spacer 1401 is provided for a pixel, and the columnar spacer 1401 enhances adhesion between an opposite substrate 1402 and a substrate 1403 on the element side. Accordingly, it is possible to prevent semiconductor elements other than the region overlapping with the sealant from remaining on the first substrate side when the first substrate is separated.

  FIG. 11B is a cross-sectional view of a liquid crystal display device using a nematic liquid crystal, a smectic liquid crystal, a ferroelectric liquid crystal, or PDLC (polymer dispersed liquid crystal) containing them in a polymer resin. With the use of the PDLC 1404, adhesion between the counter substrate 1402 and the element-side substrate 1403 is increased, and a semiconductor element other than a region overlapping with a sealant when the first substrate is separated is provided on the first substrate side. It can be prevented from remaining.

(Example 2)
In this embodiment, a configuration of a light emitting device mounted on an IC card of the present invention will be described.

  12, a base film 6001 is formed over a card substrate 6000, and a transistor 6002 is formed over the base film 6001. The transistor 6002 is covered with a first interlayer insulating film 6006, and a second interlayer insulating film 6007 and a third interlayer insulating film 6008 are stacked over the first interlayer insulating film 6006. .

  As the first interlayer insulating film 6006, a single layer or a stacked layer of a silicon oxide, a silicon nitride, or a silicon nitride oxide film can be used by a plasma CVD method or a sputtering method. Alternatively, a film in which a silicon oxynitride film having a higher molar ratio of oxygen than nitrogen is stacked over a silicon nitride oxide film having a higher molar ratio of nitrogen than oxygen may be used as the first interlayer insulating film 6006.

  Note that when heat treatment (heat treatment at 300 to 550 ° C. for 1 to 12 hours) is performed after the first interlayer insulating film 6006 is formed, hydrogen contained in the first interlayer insulating film 6006 is used to form the active layer 6003. Can terminate (hydrogenate) the dangling bonds of the semiconductor contained in the semiconductor.

  As the second interlayer insulating film 6007, an organic resin film, an inorganic insulating film, an insulating film formed using a siloxane-based material as a starting material and having Si—O bonds and Si—CH x bonds, or the like can be used. In this embodiment, non-photosensitive acrylic is used. As the third interlayer insulating film 6008, a film which does not easily transmit a substance which causes deterioration of a light-emitting element, such as moisture or oxygen, to be transmitted as compared to other insulating films. Typically, for example, it is desirable to use a DLC film, a carbon nitride film, a silicon nitride film formed by an RF sputtering method, or the like.

In FIG. 12, CuPc having a film thickness of 20 nm as the hole injection layer 6011, α-NPD having a film thickness of 40 nm as the hole transport layer 6012, and DMQd as the light emitting layer 6013 were added on the anode 6010 formed of TiN. Alq having a thickness of 37.5 nm _3, Alq ₃ having a film thickness of 37.5 nm as an electron transporting layer 6014, CaF ₂ film thickness 1nm as an electron injection layer 6015, a cathode formed of Al having a thickness of 10 to 30 nm 6016 Are sequentially stacked. In FIG. 12, a material that does not transmit light is used for the anode 6010, and the cathode 6016 has a thickness of 10 to 30 nm to transmit light so that light emitted from the light-emitting element can be obtained from the cathode 6016 side. In order to obtain light from the cathode 6016 side, in addition to the method of reducing the film thickness, there is also a method of using ITO whose work function is reduced by adding Li. In this embodiment, a structure of a light emitting element which emits light from the cathode side is shown.

  The transistor 6002 is a driving transistor that controls a current supplied to the light-emitting element, and is connected to the light-emitting element directly or in series through another circuit element.

  The anode 6010 is formed over the third interlayer insulating film 6008. An organic resin film 6018 used as a partition is formed over the third interlayer insulating film 6008. Note that although an organic resin film is used as a partition in this embodiment, an inorganic insulating film, an insulating film including a Si—O bond and a Si—CH x bond formed using a siloxane-based material as a starting material, or the like is used as a partition. Can be. The organic resin film 6018 has an opening 6017 in which the anode 6010, the hole-injecting layer 6011, the hole-transporting layer 6012, the light-emitting layer 6013, the electron-transporting layer 6014, the electron-injecting layer 6015, and the cathode 6016 are formed. The light-emitting element 6019 is formed by overlapping.

  Then, a protective film 6020 is formed over the organic resin film 6018 and the cathode 6016. As in the case of the third interlayer insulating film 6008, a film which is less likely to transmit a substance such as moisture or oxygen which causes deterioration of the light-emitting element than the other insulating films is used for the protective film 6020. Typically, for example, it is desirable to use a DLC film, a carbon nitride film, a silicon nitride film formed by an RF sputtering method, or the like. Alternatively, a film in which a substance such as moisture or oxygen is not easily transmitted and a film in which a substance such as moisture or oxygen is easily transmitted can be stacked and used as a protective film.

  The end of the opening 6017 of the organic resin film 6018 may be rounded so that a hole is not formed in the end of the electroluminescent layer formed so as to partially overlap the organic resin film 6018. desirable. Specifically, it is desirable that the radius of curvature of the curve drawn by the cross section of the organic resin film in the opening is about 0.2 to 2 μm.

  With the above structure, the coverage of the electroluminescent layer including the hole injection layer 6011, the hole transport layer 6012, the light-emitting layer 6013, the electron transport layer 6014, and the electron injection layer 6015, which are formed later, and the cathode 6016 can be improved. The short circuit between the anode 6010 and the cathode 6016 can be prevented. In addition, by relaxing the stress of each of the above layers, a defect called shrink in which a light emitting region is reduced can be reduced, and reliability can be improved.

  Actually, when completed up to FIG. 12, the package is formed of a protective film (laminate film, ultraviolet curable resin film, etc.) with high airtightness and less degassing so as not to be further exposed to the outside air, or a light-transmitting sealing substrate. (Enclosure). At this time, in order to prevent the sealing substrate from peeling off in the step of peeling the second substrate, a resin is sealed to increase the adhesion of the sealing substrate.

  Note that the light emitting device illustrated in FIG. 12 corresponds to a state before a cover material is attached. In this embodiment, the light emitted from the light emitting element 6019 is applied to the cover material side as shown by the arrow. Note that the present invention is not limited to this, and the light emitted from the light emitting element may face the card substrate. In this case, the image displayed on the pixel portion is viewed from the card substrate side.

  Note that the light emitting device of the present invention is not limited to the configuration shown in FIG.

(Example 3)
In the present embodiment, an example of a specific use method when the IC card of the present invention is used as a bank cash card will be described.

  As shown in FIG. 13, when opening an account at a financial institution such as a bank, image data of a photograph of the face of a depositor is stored in a ROM provided in a thin film integrated circuit of a cash card. By storing the data of the face photo in the ROM, it is possible to prevent forgery such as replacement of the face photo. Then, by providing the cash card to the depositor, the use of the cash card is started.

  The cash card is used for transactions at an ATM (automatic teller machine) or at a counter. When a transaction such as withdrawal, deposit, or transfer is performed, details such as the balance of the deposit and the date and time of the transaction are stored in an EEPROM provided in the thin film integrated circuit of the cash card.

  After the transaction, a statement such as a deposit balance and a transaction date and time may be displayed in the pixel portion of the cash card, and the display may be programmed so that the display disappears after a certain period of time. Then, at the time of this transaction, all settlements made without using a cash card, such as withdrawal by automatic transfer, may be recorded in the IC card, and this may be confirmed in the pixel portion.

  In addition, using a bank cash card such as a debit card (R), before making a payment by directly paying from an account without exchanging cash, a bank computer via a terminal device used for making a payment The balance information may be extracted and the balance may be displayed on the pixel portion of the IC card. If the balance is displayed on the terminal device, there is a fear that a third party may see the balance while using the terminal. However, by displaying the balance on the pixel portion of the IC card, the user of the IC card can view the balance without being seen. You can check the balance. Then, since the balance can be confirmed using the terminal device used for settlement installed at the store, the balance inquiry and bookkeeping are performed at a bank counter or an ATM in order to confirm the balance before settlement. The complexity can be eliminated.

  The IC card of the present invention is not limited to a cash card. The IC card of the present invention may be used as a commuter pass or a prepaid card, and the balance may be displayed on the pixel portion.

(Example 4)
In this embodiment, photographs of a display device mounted on a plastic substrate and a CPU which is one of integrated circuits are shown.

  First, FIG. 15A shows a configuration of a card substrate of an IC card of the present invention. Reference numeral 1501 denotes a display device, 1502 denotes an integrated circuit, and 1503 corresponds to a CPU included in the integrated circuit.

  FIG. 15B shows a photograph of a display device formed on a 200 μm-thick polycarbonate substrate. The display device illustrated in FIG. 15B is a light-emitting device, and photographs are taken from the polycarbonate substrate side. Reference numeral 1504 denotes a signal line driver circuit; 1505, a scan line driver circuit; and 1506, a pixel portion. FIG. 15C illustrates an enlarged view of the pixel portion 1506 of the light-emitting device illustrated in FIG. As shown in FIG. 15C, each pixel is provided with a light-emitting element. Light emitted from the light emitting element is directed to the polycarbonate substrate side.

  FIG. 15D is an enlarged view of a wiring electrically connected to the display device. To the wirings 1507 to 1509, a clock bar signal, a clock signal, and a start pulse signal which are sequentially supplied to a scan line driver circuit 1505 provided in a display device are input. The wirings 1507 to 1509 are formed of the same conductive film as the wiring electrically connecting TFTs used in the display device.

  FIG. 15E shows a photograph of the CPU 1503 formed over a 200 μm-thick polycarbonate substrate. The photograph of the CPU 1503 shown in FIG. 15E is taken from the polycarbonate substrate side. FIG. 15F illustrates an enlarged view of the arithmetic circuit 1510 included in the CPU 1503.

  As described above, by forming the integrated circuit and the display device over the plastic substrate, a flexible IC card can be formed.

(Example 5)
Example 1 In this example, a cross section of a light emitting device actually formed on a plastic substrate using transfer and a configuration thereof will be described.

  First, a sample observed in this example will be described. In this embodiment, first, a TFT for controlling the operation of the light emitting element was transferred onto a plastic substrate made of polycarbonate. Next, a light-emitting element electrically connected to the TFT was formed, and a separately prepared plastic substrate was attached so as to overlap the plastic substrate with the light-emitting element interposed therebetween. The former is referred to as a first plastic substrate, and the latter is referred to as a second plastic substrate, in order to distinguish the former plastic substrate from the latter bonded plastic substrate. Note that an epoxy resin was used for both the adhesive used for transferring the TFT and the adhesive used for bonding the second plastic substrate.

  FIG. 16 shows a photograph of a cross section of the sample prepared in this example, which was obtained by a scanning electron microscope (SEM). In FIG. Reference numeral 20 denotes a first plastic substrate. No. 19 is an adhesive. No. 2 is an adhesive, Reference numeral 1 denotes a second plastic substrate. No. No. 19 adhesive and No. 19 The TFT and the light emitting element are formed between the adhesive and the adhesive indicated by reference numeral 2. In addition, No. A second plastic substrate indicated by No. 1; 2 shows that there is a layer between the adhesive and the adhesive, which, when the cross section is polished for measurement, is no longer attached to the second plastic substrate. This corresponds to a region where the adhesive indicated by No. 2 partially peeled off.

  Next, FIG. 3 shows the results of EDX measurement performed to identify the composition of the second plastic substrate indicated by No. 1. FIG. The result of performing EDX measurement in order to identify the composition of the first plastic substrate indicated by reference numeral 20 is shown. As shown in FIGS. 17 and 20, carbon and oxygen as components of polycarbonate were detected, and Pt contained in a conductive film formed to prevent charge-up of a sample by an electron beam was detected. .

  Next, FIG. 2 shows the results of EDX measurement performed to identify the composition of the adhesive indicated by No. 2. FIG. 19 shows the results of EDX measurement performed to identify the composition of the adhesive indicated by No. 19. As shown in FIGS. 18 and 19, carbon and oxygen as components of the epoxy resin were detected, and Pt contained in a conductive film formed to prevent charge-up of the sample by an electron beam was detected. I have.

  Next, photographs of a TFT and a light emitting element of the sample prepared in this example, which are obtained by a TEM (transmission electron microscope), will be described.

  FIG. 21 shows a TEM photograph of a TFT and a wiring connected to the TFT. 4001 is an adhesive made of an epoxy resin, 4002 is a base film in which silicon oxide and silicon nitride oxide are sequentially laminated, 4003 is an island-shaped semiconductor film of a TFT, 4004 is a gate insulating film made of silicon oxide, 4005 is TaN and W 4006, a first interlayer insulating film made of silicon nitride, 4007, a second interlayer insulating film made of acrylic, 4008, a wiring in which Ti, Al—Si, and Ti are sequentially stacked, and 4009, A third interlayer insulating film made of silicon nitride; 4010, a partition made of acrylic; 4011, a silicon nitride film formed on the partition 4010; 4012, an electroluminescent layer; 4013, a cathode made of Al; 4014, an adhesive made of epoxy resin Is equivalent to

  FIG. 22 shows a photograph of the light emitting element obtained by the TEM. Note that the components already shown in FIG. 21 are denoted by the same reference numerals. Reference numeral 4015 corresponds to an anode made of ITO. A portion where the anode 4015, the electroluminescent layer 4012, and the cathode 4013 overlap each other corresponds to a light emitting element.

  FIG. 23 shows a photograph of the TFT obtained by the TEM. Note that the components already shown in FIG. 21 are denoted by the same reference numerals. FIGS. 24 to 36 show the results of EDX measurement performed to identify the composition of each layer shown in FIG. Note that the Ga peak detected in FIGS. 24 to 36 is considered to be Ga used for forming a beam when the sample is processed by the focused ion beam processing observation device (FIB).

  FIG. 24 corresponds to the result of the EDX measurement at Point 2 of the adhesive 4014 shown in FIG. As shown in FIG. 24, carbon and oxygen corresponding to the components of the epoxy resin were detected.

  FIG. 25 corresponds to the result of the EDX measurement at Point 3 of the cathode 4013 shown in FIG. As shown in FIG. 25, Al was detected.

  FIG. 26 corresponds to the result of the EDX measurement at Point 4-1 of the electroluminescent layer 4012 shown in FIG. As shown in FIG. 26, carbon, oxygen, and Al corresponding to the components of the electroluminescent layer were detected.

  FIG. 27 corresponds to the result of the EDX measurement at Point 5 of the silicon nitride film 4011 shown in FIG. As shown in FIG. 27, nitrogen and silicon were detected.

  FIG. 28 corresponds to the result of the EDX measurement at Point 11 of the third interlayer insulating film 4009 shown in FIG. As shown in FIG. 28, nitrogen and silicon corresponding to the components of silicon nitride were detected.

  FIG. 29 corresponds to the result of the EDX measurement at Point 12 of the second interlayer insulating film 4007 shown in FIG. As shown in FIG. 29, carbon and oxygen corresponding to the acrylic component were detected.

  FIG. 30 corresponds to the result of the EDX measurement at Point 13 of the first interlayer insulating film 4006 shown in FIG. As shown in FIG. 30, nitrogen and silicon corresponding to the components of silicon nitride were detected.

  FIG. 31 corresponds to the result of the EDX measurement at Point 14 of the gate electrode 4005 shown in FIG. FIG. 32 corresponds to the result of the EDX measurement at Point 15 of the gate electrode 4005 shown in FIG. As shown in FIG. 31, W was detected at Point 14 of the gate electrode 4005. Further, as shown in FIG. 32, Ta was detected in the gate electrode 4005 at Point15.

  FIG. 33 corresponds to the result of EDX measurement at Point 16 of the gate insulating film 4004 shown in FIG. As shown in FIG. 33, silicon and oxygen corresponding to the components of silicon oxide were detected.

  FIG. 34 corresponds to the result of EDX measurement at Point 17 of the island-shaped semiconductor film 4003 shown in FIG. As shown in FIG. 34, silicon was detected.

  FIG. 35 corresponds to the result of the EDX measurement at Point 18 of the base film 4002 shown in FIG. As shown in FIG. 35, silicon and oxygen corresponding to the components of silicon oxide were detected. Note that the base film 4002 actually has a film formed using silicon nitride oxide over a film formed using silicon oxide.

  FIG. 36 corresponds to the result of the EDX measurement at Point 19 of the adhesive 4001 shown in FIG. As shown in FIG. 36, carbon and oxygen corresponding to the components of the epoxy resin were detected.

The figure which shows the external view of the IC card of this invention, and the internal structure. The figure which shows the manufacturing method of the IC card of this invention using a large-sized card board. The figure which shows the cross section of the IC card of this invention. FIG. 2 is a block diagram of a thin film integrated circuit and a display device. 6A to 6C illustrate a method for manufacturing a semiconductor element. 6A to 6C illustrate a method for manufacturing a semiconductor element. 6A to 6C illustrate a method for manufacturing a semiconductor element. 6A to 6C illustrate a method for manufacturing a semiconductor element. 6A to 6C illustrate a method for manufacturing a semiconductor element. FIG. 2 is a block diagram showing the structure of an input / output interface. FIG. 3 is a cross-sectional view of a liquid crystal display device. FIG. 4 is a cross-sectional view of a light-emitting device. The figure which shows the usage method of the IC card of this invention. FIG. 2 is a view showing the appearance of the IC card of the present invention. Photograph of a thin film integrated circuit and display device formed on a plastic substrate. 14 is a photograph of a cross section of the sample prepared in Example 5 obtained by SEM. The figure which shows the result of EDX measurement of Point1 in FIG. The figure which shows the result of EDX measurement of Point2 in FIG. The figure which shows the result of the EDX measurement of Point19 in FIG. The figure which shows the result of EDX measurement of Point20 in FIG. 14 is a photograph of a cross section of the sample prepared in Example 5 obtained by TEM. 14 is a photograph of a cross section of the sample prepared in Example 5 obtained by TEM. 14 is a photograph of a cross section of the sample prepared in Example 5 obtained by TEM. The figure which shows the result of EDX measurement of Point2 in FIG. The figure which shows the result of EDX measurement of Point3 in FIG. The figure which shows the result of EDX measurement of Point4-1 in FIG. The figure which shows the result of EDX measurement of Point5 in FIG. The figure which shows the result of EDX measurement of Point11 in FIG. The figure which shows the result of EDX measurement of Point12 in FIG. The figure which shows the result of the EDX measurement of Point13 in FIG. The figure which shows the result of the EDX measurement of Point14 in FIG. The figure which shows the result of EDX measurement of Point15 in FIG. The figure which shows the result of EDX measurement of Point16 in FIG. The figure which shows the result of EDX measurement of Point17 in FIG. The figure which shows the result of EDX measurement of Point18 in FIG. The figure which shows the result of EDX measurement of Point19 in FIG.

Claims (10)

A display device and a thin film integrated circuit,
Driving of the display device is controlled by the thin film integrated circuit,
The semiconductor element used for the thin film integrated circuit and the display device is formed using a polycrystalline semiconductor film,
The thin film integrated circuit and the display device are sealed between a first substrate and a second substrate of the card with a resin,
The card according to claim 1, wherein the first substrate and the second substrate are plastic substrates. A display device and a thin film integrated circuit,
Driving of the display device is controlled by the thin film integrated circuit,
The semiconductor element used for the thin film integrated circuit and the display device is formed using a polycrystalline semiconductor film,
The thin film integrated circuit and the display device are sealed between a first substrate and a second substrate of the card with a resin,
The first substrate and the second substrate are plastic substrates;
The card according to claim 1, wherein a thickness of the card is 0.05 mm or more and 1.5 mm or less. A display device and a thin film integrated circuit,
Driving of the display device is controlled by the thin film integrated circuit,
The display device is a passive matrix type or an active matrix type,
The thin film integrated circuit and the display device are sealed between a first substrate and a second substrate of the card with a resin,
The card according to claim 1, wherein the first substrate and the second substrate are plastic substrates. Having a display device and a plurality of thin film integrated circuits,
Driving of the display device is controlled by the thin film integrated circuit,
The display device is a passive matrix type or an active matrix type,
The plurality of thin film integrated circuits are stacked,
The plurality of thin film integrated circuits and the display device are sealed with a resin between a first substrate and a second substrate of the card,
The card according to claim 1, wherein the first substrate and the second substrate are plastic substrates.   5. The card according to claim 4, wherein the thickness of each of the plurality of thin film integrated circuits is 1 μm or more and 5 μm or less.   The card according to any one of claims 1 to 5, wherein the display device is a liquid crystal display device or a light emitting device.   The card according to any one of claims 1 to 6, wherein the card is an ID card.   The card according to any one of claims 1 to 6, wherein the card is a semi-hard card.   The card according to any one of claims 1 to 6, wherein the card is an IC card. Using a card having a display device and a thin film integrated circuit,
Driving of the display device is controlled by the thin film integrated circuit,
The thickness of the card is 0.05 mm or more and 1.5 mm or less,
Recording the amount of the transaction made in the account of the financial institution, the date and time of the transaction or the balance of the deposit in the thin film integrated circuit;
The bookkeeping system, wherein the recorded amount of the transaction, the date and time of the transaction, or the balance of the deposit are displayed on the display device.