JP2004207755A - Substrate treatment device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a device capable of preferably separating and discharging waste liquid of a plurality of kinds of treatment liquid used for treatment. <P>SOLUTION: A guide member 30 is disposed movably vertically while surrounding a substrate W held by a spin chuck 1. Inclining sections 31a, 31b each having a diameter decreasing gradually upward are formed on the inner wall face of the guide member 30. The substrate W is treated by locating the inclining sections 31a (31b) of the guide member 30 at a substrate W-side held by the spin chuck 1. The treatment liquid scattered from the substrate W is guided to waste liquid tubs 24a (24b) corresponding to the kind of the treatment liquid in a receiving member 21 along the inclining sections 31a (31b). <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

  The present invention provides a substrate for a semiconductor wafer, a glass substrate for a liquid crystal display, a glass substrate for a photomask, a substrate for an optical disk, and the like. The present invention relates to a substrate processing apparatus that supplies a processing liquid to a substrate and performs a predetermined process such as a cleaning process on the substrate.

  FIG. 8 shows an example of this type of conventional substrate processing apparatus.

  The apparatus shown in FIG. 8 is an apparatus for performing a cleaning process using a chemical solution or pure water on a substrate, and has a function of separating a chemical solution and a waste solution and draining them.

  The apparatus includes a spin chuck 100 rotatable around a vertical axis while holding a substrate W in a horizontal posture by suction, a motor 102 for rotating the spin chuck 100 at a high speed via a rotation shaft 101, An elevating mechanism 103 for elevating and lowering the spin chuck 100, a cup 104 surrounding the substrate W to be processed to form a processing chamber 104a, and supplying a cleaning liquid such as a chemical solution or pure water to the substrate W from obliquely above or obliquely below. Cleaning nozzles 105a, 105b, 105c, and 105d for cleaning.

  A drain port 106 for draining a cleaning liquid used for cleaning the substrate W is formed at the bottom of the cup 104. The inner wall surface of the cup 104 receives the cleaning liquid scattered from the rotating substrate W during processing and guides the cleaning liquid to the drain port 106. Further, a gas intake port 107 for taking in gas is formed at the upper end of the cup 104. This type of substrate processing apparatus is installed in a clean room. In the clean room, a clean gas flows downflow from the ceiling to the floor. The down-flow clean gas is taken into the processing chamber 104a in the cup 104 from the gas intake port 107 and exhausted from the exhaust port 108 provided in the cup 104 to discharge mist of the cleaning liquid floating in the processing chamber 104a. It is configured as follows.

  A substantially disk-shaped gutter member 110 having a ring-shaped gutter groove 109 facing the drainage port 106 is rotatably mounted below the cup 104 on a protective cylinder 111 surrounding the rotating shaft 101. . A drainage outlet 112 is formed at a predetermined location on the bottom of the gutter groove 109. A ring gear 113 is fixed to the outer periphery of the gutter member 110, and a drive gear 115 attached to a drive shaft of a motor 114 meshes with the ring gear 113. Further below the gutter member 110, there are provided a waste drain 116 for discarding waste liquid used in the cleaning process, and a collection drain 117 for collecting a chemical solution. With such a configuration, by driving the motor 114, the drainage outlet 112 of the gutter member 109 can be selectively positioned above either the waste drain 116 or the recovery drain 117.

  This conventional device operates as follows.

  First, an unprocessed substrate W is delivered to the spin chuck 100 from a transfer robot (not shown) while the spin chuck 100 is raised and protruded from above the cup 104. The spin chuck 100 that has received the substrate W is lowered by the elevating mechanism 103, and the substrate W is positioned in the processing chamber 104a. Then, the substrate W is rotated together with the spin chuck 100, a chemical solution is supplied to the substrate W from the cleaning liquid nozzles 105a to 105d, and the substrate W is subjected to a cleaning process using the chemical solution. In this chemical cleaning process, the chemical liquid can be collected for reuse by locating the drainage outlet 112 above the recovery drain 117. After a predetermined chemical solution cleaning processing time has elapsed, the cleaning solution supplied to the substrate W from the cleaning solution nozzles 105a to 105d is switched from the chemical solution to pure water, and the rinsing process of washing the chemical solution attached to the substrate W with pure water is performed. W. At the time of this rinsing process, the waste liquid (pure water mixed with the chemical solution) used for the cleaning process can be discarded by positioning the drain outlet 112 above the waste drain 116. When a predetermined rinsing time has elapsed, the supply of pure water from the cleaning liquid nozzles 105a to 105d is stopped, and the substrate W is rotated as it is to shake off and dry the pure water adhering to the substrate W. When the drying of the substrate W is completed, the rotation of the spin chuck 100 is stopped. Then, in a state where the spin chuck 100 is raised by the elevating mechanism 103 and protrudes from above the cup 104, the transfer robot (not shown) receives the cleaned substrate W from the spin chuck 100 and performs a cleaning process on one substrate W. Ends.

  However, the conventional device has a function of separating the chemical liquid and the waste liquid and draining the liquid. However, in the configuration of the conventional device, the path from the cup 104 to the drainage outlet 112 of the gutter member 110 via the drainage port 106 is provided. Is commonly used for the chemical liquid to be collected and the waste liquid to be discarded. Therefore, mixing of the two liquids in this route cannot be avoided, and the separation and drainage of the chemical liquid and the waste liquid are insufficient. there were.

  The present invention has been made in view of such circumstances, and in an apparatus having a function of separating and discharging a plurality of types of processing liquid used for processing, a separation waste liquid of a plurality of types of processing liquid used for processing is provided. To provide a device that can suitably perform

  The present invention has the following configuration to achieve such an object.

  That is, the invention according to claim 1 is a substrate processing apparatus that selectively supplies a plurality of types of processing liquids and performs predetermined processing on the substrate when the substrate is rotated, and holds the substrate in a horizontal posture. Substrate holding means, substrate rotating means for rotating a substrate held by the substrate holding means around a vertical axis, and a plurality of drains provided below the substrate holding means and corresponding to each processing liquid. A receiving member having a plurality of drainage tanks whose tanks are formed concentrically around the rotation axis of the substrate rotating means, and held by the substrate holding means above each drainage tank of the receiving member; An inclined wall that is provided so as to surround the substrate, has an inner wall surface that receives the processing liquid scattered from the substrate rotated by the substrate rotating means and guides the processing liquid to the drainage tank of the receiving member, and the diameter decreases as going upward. Part is formed on the inner wall surface Both, a guide member in which a gas intake port for taking in gas is formed at the upper end of the inclined portion, and an exhaust port provided below the substrate holding means, for exhausting the gas taken in by the gas intake port, Elevating means for elevating and lowering the guide member, and elevating control means for controlling the elevating means, wherein the guide member is provided with a plurality of processing liquids corresponding to the respective types of processing liquids arranged concentrically at intervals from each other. Is formed, and the elevation control means moves the height of the substrate held by the substrate holding means at the height position of the guide member corresponding to the type of the processing liquid supplied to the substrate. The lifting and lowering means is controlled so as to perform the following.

  According to the invention described in claim 1, the guide member corresponding to the type of the processing liquid to be supplied to the substrate at the height position of the substrate held by the substrate holding means by the elevation control means. The elevating means is controlled such that the inclined portion is located. Then, the processing liquid corresponding to the inclined portion is supplied to the substrate, and the substrate is processed. The processing liquid supplied to the substrate is guided to an individual drainage tank below the processing liquid along the inclined portion of the guide member corresponding to the processing liquid.

  When processing by supplying another type of processing liquid to the substrate, the elevation control means sets the inclined portion of the guide member corresponding to the another type of processing liquid at the height position of the substrate held by the substrate holding means. The lifting means is controlled so that is located, and another type of processing liquid is supplied to the substrate to perform processing on the substrate. This other type of processing liquid is guided along the inclined portion of the guide member corresponding to the processing liquid to a separate drainage tank below it. Therefore, a plurality of types of processing liquids used for processing can be separated and drained.

  According to a second aspect of the present invention, in the substrate processing apparatus according to the first aspect, an exhaust tank provided with the exhaust port at the bottom is provided on the receiving member positioned inside the plurality of drain tanks. It is characterized by the following.

  According to the second aspect of the present invention, the gas flowing from the gas intake of the guide member flows down around the substrate, and flows through the exhaust tank of the receiving member disposed below the substrate holding means. After that, the air is exhausted from an exhaust port provided at the bottom of the exhaust tank. On the other hand, the processing liquid scattered from the rotated substrate is guided to a drainage tank provided around the exhaust tank along the inclined portion of the guide member. Since the receiving member including the exhaust tank and the drain tank provided around the exhaust tank is provided, the mist of the processing liquid can be stopped in the drain tank, and the mist of the processing liquid adheres to the substrate again. Can be suppressed.

  According to the substrate processing apparatus of the present invention, since each type of processing liquid is drained in a separate inclined portion and a drainage tank, the respective liquids are not mixed and discharged, and the separated drainage of each liquid is performed. Can be suitably performed.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  FIG. 1 is a longitudinal sectional view showing a configuration of a substrate processing apparatus according to one embodiment of the present invention. This apparatus is for performing a cleaning process using a chemical solution or pure water on a semiconductor wafer (substrate) W to be processed, and has a function of separating a chemical solution and a waste solution and draining them.

  The substrate W is held in a horizontal posture by a spin chuck 1 as a substrate holding unit. The spin chuck 1 has a spin base 3 attached to an upper end of a rotating shaft 2 so as to be integrally rotatable. On the upper surface of the spin base 3, three or more substrate holding members 4 for holding the outer peripheral portion of the substrate W at three or more places are provided upright at regular intervals along the periphery of the spin base 3. In FIG. 1 and subsequent figures, only one substrate holding member 4 is shown to avoid complicating the drawing.

  Each of the substrate holding members 4 includes a substrate supporting portion 4a that supports the outer peripheral portion of the substrate W from below and a substrate holding portion 4b that presses the outer peripheral end surface of the substrate W supported by the substrate supporting portion 4a to hold the substrate W. Have. Each substrate holding member 4 is configured to be switchable between a holding state in which the substrate holding portion 4b presses the outer peripheral end surface of the substrate W and a non-holding state in which the substrate holding portion 4b is separated from the outer peripheral end surface of the substrate W. The switching between the holding state and the non-holding state is realized by, for example, a link mechanism disclosed in Japanese Patent Publication No. 3-9607.

  An electric motor 6 as a substrate rotating means is interlockingly connected near the lower end of the rotating shaft 2 by a belt transmission mechanism 5 or the like. When the electric motor 6 is driven, the rotating chuck 2 and the spin chuck 1 are rotated together with the spin chuck. The substrate W held at 1 is rotated around a vertical axis J.

  The rotating shaft 2 is formed of a cylindrical member having a hollow. A cleaning liquid supply pipe 7 penetrates the hollow portion, and the lower surface of the substrate W held by the spin chuck 1 from the cleaning liquid supply section 7a at the upper end thereof. The cleaning liquid is supplied to the vicinity of the rotation center. The cleaning liquid supply pipe 7 is connected to a pipe 8 in communication. The base end of the pipe 8 is branched, and a chemical liquid supply source 9 is connected to one branch pipe 8a, and a pure water supply source 10 is connected to the other branch pipe 8b. The branch pipes 8a, 8b are provided with opening / closing valves 11a, 11b, and by switching the opening / closing of the opening / closing valves 11a, 11b, the cleaning liquid supply section 7a can selectively switch between the chemical solution and pure water. It has become.

  The gap between the inner wall surface of the hollow portion of the rotating shaft 2 and the outer wall surface of the cleaning liquid supply pipe 7 serves as a gas supply path 12. The gas supply path 12 is connected to a gas supply source 15 via a pipe 14 provided with an opening / closing valve 13, and is connected to a gas supply section 12 a at the upper end of the gas supply path 12 to connect the spin base 3 and the substrate W to each other. It is configured such that a clean gas such as clean air or clean inert gas (such as nitrogen gas) can be supplied to a space between the lower surface and the space.

  The rotating shaft 2, the belt transmission mechanism 5, the electric motor 6, and the like are housed in a cylindrical casing 16 provided on the base member 20.

  A receiving member 21 is fixedly attached around the casing 16 on the base member 20. The receiving member 21 is provided with cylindrical partition members 22a, 22b, 22c standing upright. The partition members 22a to 22c and the outer wall surface of the casing 16 allow the exhaust tank 23, the first drain tank 24a, A second drainage tank 24b is formed. The space between the outer wall surface of the casing 16 and the inner wall surface of the inner partition member 22a is the exhaust tank 23, and the space between the outer wall surface of the inner partition member 22a and the inner wall surface of the middle partition member 22b is a fourth space. The first drainage tank 24a is a space between the outer wall surface of the intermediate partition member 22b and the inner wall surface of the outer partition member 22c.

  An exhaust port 26 connected to an exhaust duct 25 is provided at the bottom of the exhaust tank 23, and the gas in the exhaust tank 23 is sucked from the exhaust port 26. A first drain port 28a connected to the recovery drain 27 is provided at the bottom of the first drain tank 24a, and a waste drain 29 is connected to the bottom of the second drain tank 24b. A second drain port 28b is provided.

  In addition, in FIG. 1 and subsequent figures, in order to avoid complicating the drawing, each of the partition members 22a to 22c and a later-described guide member 30 show only a cross-sectional shape.

  Above the first and second drainage tanks 24a and 24b, a cylindrical guide member 30 is provided so as to vertically move so as to surround the spin chuck 1 and the substrate W held by the spin chuck. The guide member 30 is formed with two inclined portions 31a and 31b whose diameter decreases as going upward. The respective inclined portions 31a and 31b are arranged concentrically with an interval therebetween. Further, gas intake ports 32a and 32b having the same diameter R are formed at the upper ends of the inclined portions 31a and 31b. Further, vertical portions 33 and 34a are continuous with a lower end portion of the inclined portion 31a, and a vertical portion 34b is continuous with a lower end portion of the inclined portion 31b. The inclined portions 31a, 31b are connected via vertical portions 34a, 34b, and a large number of openings 35 forming a drain guide channel are formed in the connecting portion in the circumferential direction. The guide member 30 has an annular groove 36 formed between the vertical portion 33 and the vertical portion 34a. The groove 36 is fitted into the intermediate partition member 22b, and the vertical portions 34a and 34b are formed. The guide member 30 is disposed so as to fit into the second waste liquid tank 24b.

  When the inclined portion 31a is located at the height position HW of the substrate W held by the spin chuck 1, the cleaning liquid scattered from the rotated substrate W is received by the inclined portion 31a, and the inclined portion 31a, the vertical portion The liquid is guided to the first drainage tank 24a along 33, and is discharged from the first drainage port 28a. In this device, the inclined portion 31a, the vertical portion 33, the first drainage tank 24a, and the first drainage port 28a are used for collecting the chemical solution, and are not shown through the first drainage port 28a via the recovery drain 27. The chemical is collected in the collection tank, and the chemical collected from the collection tank is supplied to the chemical supply source 9, so that the chemical is reused.

  Further, when the inclined portion 31b is located at the height position HW of the substrate W held by the spin chuck 1, the cleaning liquid scattered from the rotating substrate W is received by the inclined portion 31b, and the inclined portion 31b, Along the vertical portion 34b, the liquid is guided from the opening 35 to the second drain tank 24b, and is drained from the second drain port 28b. In this device, the inclined portion 31b, the vertical portion 34b, the opening 35, the second drain tank 24b, and the second drain port 28b are disposed of waste liquid (pure water mixed with a chemical solution) after being used for the cleaning process. The waste liquid is discarded from the second drain port 28b through the waste drain 29.

  The structure of an example of the elevating mechanism for elevating and lowering the guide member 30 will be described with reference to FIG. The guide member 30 is supported by a lifting member 41 via a support member 40. A screw shaft 42 is screwed into the elevating member 41 and is slidably fitted on the guide rail 43. By driving the motor 44 connected to the screw shaft 42, the elevating member 41 is raised and lowered, and the guide member 30 is raised and lowered accordingly. The elevating member 41, the screw shaft 42, the guide rail 43, the motor 44 and the like constitute an elevating mechanism 45 corresponding to the elevating means.

  The guide member 30 has a first height H1 at which the inclined portion 31a is located at the height position HW of the substrate W held by the spin chuck 1, and a second height at which the inclined portion 31b is located at the height position HW of the substrate W. The gas inlet 32b above the height H2 is raised and lowered at three levels of a third height H3 located below the height HW of the substrate W. At the height positions of the elevating member 41 corresponding to the above-mentioned first to third height positions H1 to H3 of the guide member 30, sensors 46a to 46c for detecting the elevating member 41 constituted by a reflection type optical sensor or the like are provided. The motor 44 is driven and controlled based on the detection signals from the sensors 46a to 46c, and the guide member 30 is positioned at the first to third height positions H1 to H3. As shown in FIG. 3, the elevation control is configured to be performed by a control unit 50 functioning as elevation control means and contact / separation control means.

  Returning to FIG. 1, an atmosphere blocking member 60 having an opening at the center is disposed above the spin chuck 1. The atmosphere blocking member 60 has a diameter slightly larger than the diameter of the substrate W and smaller than the diameter R of the gas intake ports 32a and 32b of the guide member 30, and has a hollow cylindrical support shaft 61. It is attached to the lower end part so as to be integrally rotatable. The support shaft 61 is rotatably supported by a support arm 62. A driven pulley 63 is attached to the support shaft 61 so as to be integrally rotatable. An endless belt 66 is stretched between the driven pulley 63 and a driven pulley 65 connected to a driving shaft of a motor 64. By driving the motor 64, the atmosphere blocking member 60 is moved together with the support shaft 61 in the vertical direction. It is configured to be rotated around the axis J of the.

  The support arm 62 is moved up and down by a contact / separation mechanism 67 corresponding to a contact / separation unit, and the vertical movement of the support arm 62 causes the atmosphere blocking member 60 to come and go with the spin chuck 1. In this apparatus, a lower position LH in which the atmosphere blocking member 60 is separated from the upper surface of the substrate W held by the spin chuck 1 by a predetermined distance WB, and the upper surface of the substrate W held by the atmosphere blocking member 60 by the spin chuck 1 The atmosphere blocking member 60 is configured to be able to move up and down between a two-stage position and an upper position HH which is largely separated from the upper position. The contact / separation mechanism 67 that realizes such contact / separation movement is configured by a mechanism using a screw shaft or the like, or an air cylinder or the like, like the elevating mechanism 45. As shown in FIG. 3, the contact / separation control is also performed by the control unit 50.

  Returning to FIG. 1, the cleaning liquid supply pipe 70 penetrates the center opening of the atmosphere blocking member 60 and the hollow part of the support shaft 61, and the substrate W held on the spin chuck 1 from the cleaning liquid supply part 70 a at the lower end thereof. The cleaning liquid can be supplied to the vicinity of the rotation center on the upper surface of the liquid crystal display. The cleaning liquid supply pipe 70 is connected to a pipe 71 in communication. The base end of the pipe 71 is branched, and a chemical supply 9 is connected to one branch 71a, and a pure water supply 10 is connected to the other branch 71b. Opening / closing valves 72a and 72b are provided in each of the branch pipes 71a and 71b, and by switching the opening and closing of these opening / closing valves 72a and 72b, the chemical liquid and pure water can be selectively switched and supplied from the cleaning liquid supply unit 70a. It has become.

  The gap between the inner wall surface of the opening at the center of the atmosphere blocking member 60 and the inner wall surface of the hollow portion of the support shaft 61 and the outer wall surface of the cleaning liquid supply pipe 70 is a gas supply path 73. The gas supply path 73 is connected to the gas supply source 15 via a pipe 75 provided with an opening / closing valve 74, and the gas supply path 73 a at the lower end of the gas supply path 73 is connected to the atmosphere blocking member 60 and the substrate W. It is configured such that a clean gas can be supplied to a space between the upper surface of the device and the upper surface of the device.

  The control unit 50 controls the rotation of the spin chuck 1, the rotation of the atmosphere blocking member 60, and the cleaning liquid supplied from the cleaning liquid supply units 7a and 70a, in addition to the control of raising and lowering the guide member 30 and controlling the contact and separation of the atmosphere blocking member 60. It is also configured to perform control such as supply control and supply control of gas from the gas supply units 12a and 73a.

  The operation of the apparatus having the above configuration will be described with reference to FIGS. 4 shows a state in which the substrate W is delivered to and from the spin chuck 1, FIG. 5 shows a state of a chemical cleaning process, and FIG. 6 shows a state of a rinsing process and a drying process.

  First, as shown in FIG. 4, the guide member 30 is positioned at the third height position H3, the spin chuck 1 is projected from above the guide member 30, and the atmosphere blocking member 60 is positioned at the upper position HH. Thus, the space between the atmosphere blocking member 60 and the spin chuck 1 is increased. In this state, a transfer robot (not shown) transfers the unprocessed substrate W to the spin chuck 1. The spin chuck 1 holds the received substrate W.

  When the reception of the substrate W is completed, as shown in FIG. 5, the guide member 30 is positioned at the first height position H1, and the guide member 30 is moved to the height position HW of the substrate W held by the spin chuck 1. With the inclined portion 31a positioned, the atmosphere blocking member 60 is positioned at the lower position LH, and the distance between the upper surface of the substrate W held by the spin chuck 1 and the atmosphere blocking member 60 is set to WB. As a result, the central portion of the gas intake port 32a at the upper end of the inclined portion 31a is closed by the atmosphere blocking member 60. The interval WB is an interval at which the atmosphere blocking member 60 is arranged so as to close the central portion of the gas intake port 32a.

  In this state, the substrate W is rotated together with the spin chuck 1, and a chemical liquid is supplied from the cleaning liquid supply units 7 a and 70 a to both upper and lower surfaces of the substrate W to perform a chemical liquid cleaning process. During this chemical cleaning process, the chemical that is shaken off from the outer peripheral portion of the rotated substrate W and scattered around is received by the inclined portion 31a, and is first drained along the inclined portion 31a and the vertical portion 33. The liquid is guided to 24a, drained from the first drain port 28a, and collected in the collection tank via the collection drain 27.

  Further, a part of the chemical solution scattered from the substrate W and hitting the inclined portion 31a becomes a mist and floats. However, in this device, the central portion of the gas intake port 32a of the guide member 30 is closed by the atmosphere blocking member 60 arranged at a predetermined distance WB from the upper surface of the substrate W. The gas flows from the annular narrow gap 80 between the gas intake port 32a of the guide member 30 and the atmosphere blocking member 60 into the space inside the space, and flows from the gap 80, and the substrate W and the spin The flow velocity of the gas flowing down the periphery of the base 3 and flowing to the exhaust port 26 below the spin chuck 1 becomes relatively high, so that gas convection hardly occurs in the space below the spin chuck 1. In addition, since the airflow flowing down around the substrate W serves as an air curtain, it is necessary to suppress the mist of the chemical solution floating outside the air curtain from flowing to the substrate W side inside the air curtain. Also. Further, since a part of the airflow also flows into the first drainage tank 24a, the mist of the chemical liquid floating near the inclined portion 31a is pushed into the first processing tank 24a by the airflow. Therefore, it is possible to suppress the mist of the chemical solution from re-adhering to the substrate W.

  The guide member 30 is arranged so that the inclined portion 31a of the guide member 30 and the substrate W held on the spin chuck 1 are sufficiently separated from each other, and the inclined portion 31a (31b) of the guide member 30 is In addition, since the atmosphere blocking member 60 is also arranged above the substrate W, the inconvenience that the rebound of the chemical solution from the inclined portion 31a adheres to the substrate W is unlikely to occur.

  Therefore, the re-adhesion of the chemical solution to the substrate W can be suitably suppressed.

  When a predetermined chemical liquid cleaning processing time has elapsed, the supply of the chemical liquid from the cleaning liquid supply units 7a and 70a is stopped. Then, as shown in FIG. 6, the guide member 30 is positioned at the second height position H2, and the inclined portion 31b of the guide member 30 is positioned at the height position HW of the substrate W held by the spin chuck 1. . At this time, the atmosphere blocking member 60 is kept at the lower position LH, that is, the interval between the upper surface of the substrate W held by the spin chuck 1 and the atmosphere blocking member 60 is maintained at WB. In this state, the vertical gap ZL between the upper and lower gas intake ports 32a, 32b is determined so that the center of the gas intake port 32b at the upper end of the inclined portion 31b is closed by the atmosphere blocking member 60.

  In this state, a rinsing process is performed in which pure water is supplied to the upper and lower surfaces of the substrate W from the cleaning liquid supply units 7a and 70a, and the chemical solution attached to the substrate W is washed away with the pure water. During this rinsing process, waste liquid (pure water mixed with a chemical solution) that is shaken off from the outer peripheral portion of the rotating substrate W and scattered around is received by the inclined portion 31b, and travels along the inclined portion 31b and the vertical portion 34b. The liquid is guided from the opening 35 to the second drain tank 24b, drained from the second drain port 28b, and discarded through the waste drain 29.

  Further, a part of the waste liquid scattered from the substrate W and hitting the inclined portion 31b floats as a mist, but the action similar to that in the case of cleaning with the chemical solution is preferably used to suppress the reattachment of the waste liquid to the substrate W. Can be. Further, an air curtain is formed so as to close the opening between the upper end of the partition member 22a and the gas intake port 32a by the airflow flowing down around the spin base 3, and a part of the airflow is directed to the inclined portion 31a. The mist of the chemical solution flowing into the first drainage tank 24a along with the mist and floating in the first drainage tank 24a is also prevented from re-adhering to the substrate W.

  After a predetermined rinsing time has elapsed, the supply of pure water from the cleaning liquid supply units 7a and 70a is stopped, and the positional relationship among the spin chuck 1, the guide member 30, and the atmosphere blocking member 60 is maintained as in FIG. A drying process is performed in which the rotation of the chuck 1 is continued and pure water adhering to the substrate W is shaken off to dry the substrate W. During this drying process, the waste liquid (pure water) that is shaken off from the outer peripheral portion of the rotated substrate W and scattered around is received by the inclined portion 31b, and along the inclined portion 31b, the vertical portion 34b, and from the opening 35. The liquid is guided to the second drain tank 24b, drained from the second drain port 28b, and discarded through the waste drain 29.

  In addition, by the same action as in the case of the chemical liquid cleaning and the rinsing treatment, the re-adhesion of the chemical liquid and the waste liquid to the substrate W during and after the drying is suitably suppressed.

  When a predetermined drying processing time has elapsed, the rotation of the spin chuck 1 is stopped. Then, as shown in FIG. 4, the guide member 30 is located at the third height position H3, and the atmosphere blocking member 60 is located at the upper position HH. The substrate W is received from the spin chuck 1, and the cleaning process for one substrate W is completed.

  At the time of the cleaning process using a chemical solution or pure water, the atmosphere blocking member 60 may be rotated as necessary, or gas may be supplied from the gas supply ports 12a and 73a.

  The inventor of the present invention simulated the gas flow between the case where the atmosphere blocking member 60 was arranged as shown in FIGS. 5 and 6 and the case where the atmosphere blocking member 60 was not arranged using this device. In this case, as compared with the case where no gas is disposed, the gas flowing through the gap 80 between the gas intake ports 32a and 32b of the guide member 30 and the atmosphere blocking member 60 and flowing around the substrate W and the spin base 3 ( It was confirmed that the flow velocity in the region 300) in FIGS. 5 and 6 was increased, and the convection of the gas in the space below the spin chuck 1 was reduced.

  In addition, when the cleaning process was performed on the substrate W by operating as described above, no chemical solution or waste liquid adhered to the substrate W, and the finishing accuracy of the cleaning was good.

  Further, according to this apparatus, since the drain path of the chemical solution and the waste liquid is separated, the separation and drainage of the chemical solution and the waste liquid can be performed well. Further, according to this device, the guide member 30 is moved up and down with respect to the spin chuck 1 and the receiving member 21 to minimize the members to be vertically displaced in the device. As compared with the case where the spin chuck 1 is moved up and down with respect to the guide member 30 (cup 104) or the member having the functions of the guide member 30 and the receiving member 21 like the cup 104 is moved up and down with respect to the spin chuck 1. The device configuration can be simplified, the device can be made compact, and the structure of the lifting mechanism 45 can be simplified.

  In the above-described embodiment, an apparatus for separating and discharging two kinds of liquids has been described. However, if configured as shown in FIG. 7, an apparatus for separating and discharging three kinds of liquids can be realized. Reference numeral 31c in FIG. 7 denotes an inclined portion for discharging the third liquid, 32c denotes a gas intake port formed at the upper end of the inclined portion 31c, and 34c denotes a vertical portion connected to the lower end of the inclined portion 31c. , 24c are a third drainage tank for draining the third liquid, 22d is a partition member, and 27a and 27b are collection drains for individually collecting different liquids. Other symbols are the same as those in the above embodiment. In the configuration of FIG. 7, by forming the diameter R of each of the gas intake ports 32 a, 32 b, and 32 c to be substantially the same, the gap between each of the gas intake ports 32 a, 32 b, and 32 c and the atmosphere blocking member 60 is reduced. The gas inlets 32a, 32b, and 32c can be made substantially the same, and the processing can be performed under substantially the same gas inflow conditions. Further, by forming the vertical interval ZL2 between the gas intake ports 32b and 32c to be substantially the same as the vertical interval ZL between the gas intake ports 32a and 32b (ZL ≒ ZL2), the substrate W held by the spin chuck 1 is formed. When the guide member 30 is moved up and down so that the inclined portions 31a to 31c are positioned at the height position HB, the height of the atmosphere blocking member 60 is maintained at HL (the upper surface of the substrate W held by the spin chuck 1 and Even when the distance between the atmosphere blocking member 60 and the atmosphere blocking member 60 is maintained at WB, the atmosphere blocking member 60 can be arranged with the same positional relationship in the height direction between the gas intake ports 32a to 32c and the atmosphere blocking member 60. The processing can be performed under substantially the same gas inflow conditions. Accordingly, with this configuration, it is not necessary to change the height of the atmosphere blocking member 60 for each of the gas intake ports 32a to 32c, and the control of the approach and separation of the atmosphere blocking member 60 is simplified.

  Further, an apparatus for separating and discharging four or more kinds of liquids can be realized by a configuration similar to that of FIG.

  In the above embodiment, an apparatus for performing a cleaning process on a substrate W has been described as an example. However, the present invention provides various types of substrate processing for supplying a predetermined processing to the substrate W by supplying another processing liquid to the substrate W. The same can be applied to the device.

  In addition, the present invention is not limited to an apparatus for processing a semiconductor wafer, but also applies to an apparatus for processing various substrates such as a glass substrate for a liquid crystal display, a glass substrate for a photomask, and a substrate for an optical disk. Can be applied to

It is a longitudinal section showing the composition of the substrate processing device concerning one embodiment of the present invention. FIG. 4 is a front view illustrating a configuration of an example of a lifting mechanism that moves a guide member up and down. FIG. 2 is a block diagram illustrating a configuration of a control system of the device according to the embodiment. FIG. 7 is a view for explaining the operation of the apparatus according to the embodiment, and is a longitudinal sectional view showing a state where a substrate is transferred to and from a spin chuck. It is a figure for explaining operation of an apparatus concerning an embodiment, and is a longitudinal section showing a state of a medical fluid cleaning process. FIG. 7 is a view for explaining the operation of the apparatus according to the embodiment, and is a longitudinal sectional view showing a state of a rinsing process and a drying process. It is a longitudinal section showing the important section composition of the modification for separating and discharging three kinds of liquids. It is a longitudinal section showing the composition of the conventional device.

Explanation of reference numerals

1: spin chuck 6: electric motor 21: receiving member 23: exhaust tank 24a, 24b: drain tank 26: exhaust port 28a, 28b: drain port 30: guide member 31a, 31b: inclined portion 32a, 32b: gas intake Port 45: Elevating mechanism 50: Control unit 60: Atmosphere blocking member 67: Contact / separation mechanism 70a: Cleaning liquid supply unit W: Substrate HW: Height position of substrate held by spin chuck WB: Substrate upper surface and atmosphere during substrate processing Clearance with blocking member

Claims (2)

If the substrate is rotated, a substrate processing apparatus that selectively supplies a plurality of types of processing liquids and performs predetermined processing on the substrate,
Substrate holding means for holding the substrate in a horizontal position,
Substrate rotating means for rotating the substrate held by the substrate holding means around a vertical axis,
A receiving member provided below the substrate holding means and provided with a plurality of drainage tanks corresponding to the respective processing liquids, the plurality of drainage tanks being formed concentrically around the rotation axis of the substrate rotating means; ,
Above each drainage tank of the receiving member, it is provided so as to surround the substrate held by the substrate holding means, receives processing liquid scattered from the substrate rotated by the substrate rotating means, and drains the receiving member. A guide having an inner wall surface for guiding to a tank, a slope portion having a diameter decreasing toward the upper side is formed on the inner wall surface, and a gas intake port for taking in gas is formed at an upper end portion of the slope portion. Components,
An exhaust port that is provided below the substrate holding unit and that exhausts gas taken in by the gas intake port;
Lifting means for raising and lowering the guide member,
Lifting control means for controlling the lifting means,
With
The guide member is formed with a plurality of inclined portions corresponding to each type of processing liquid arranged concentrically spaced apart from each other,
The elevation control unit controls the elevation unit such that the inclined portion of the guide member corresponding to the type of the processing liquid supplied to the substrate is located at a height position of the substrate held by the substrate holding unit. A substrate processing apparatus characterized by the above-mentioned. The substrate processing apparatus according to claim 1,
A substrate processing apparatus, wherein an exhaust tank provided with the exhaust port at the bottom is provided in the receiving member, located inside the plurality of drain tanks.

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