JP2004207665A - Electronic component - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electronic component in which thermal melting of the internal solder and short circuits due to outflowing melted solder are prevented when the electronic component is mounted on a mother board. <P>SOLUTION: In order to form a specified interval between the surface of a base substrate 3 and one major surface of an electronic component element 2, a side face coating member 6b applied to the side face of the electronic component element 2 connected/secured to the surface of the base substrate 3 and the outer circumferential surface of a solder joint member 5 has such a modulus of elasticity as the interval between the surface of the base substrate 3 and one major surface of the electronic component element 2 varies while following the volume expansion of a solder bump member 4 and the solder joint member 5 when they are melted. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

【００２９】
樹脂の弾性率が小さいと、強度が劣化するため落下試験において割れや欠けの不良が発生する。弾性率が大きくなると、樹脂が硬化する際の収縮も大きく反りが発生し、弾性表面波装置としての電気特性に悪影響を及ぼす。従って、落下試験において不良の発生がなく、弾性表面波装置としての電気特性に悪影響を与えない反り量０．１ｍｍ以下の試料を合格と判定すると、試料番号４、５、６，７が合格となり、即ち、２５℃における弾性率が３．５ＧＰａ〜６ＧＰａの樹脂を選定すれば良い。
【００３０】
次に、同じ１０種類の樹脂で側面外装部材６ｂを形成した弾性表面波装置１と密着強度評価用として１．８ｍｍ角の弾性表面波素子２に樹脂層を形成した試料を用いて、ハンダリフロー処理を行いハンダ流れ出しによる短絡不良の発生数を調べるとともに、ダイシェア強度計にて樹脂の密着強度を測定した。このとき２３０℃における弾性率は０．１ＧＰａ〜１．３ＧＰａの間で異なっており、また、表１に示す試料番号と表２に示す試料番号は同一のものである。これらの樹脂の２３０℃における弾性率と短絡不良の発生数及び密着強度の評価結果を表２に示す。
【００３１】
【表２】

【００３２】
２３０℃での弾性率が小さいと、溶融したハンダの体積膨張を十分吸収できる為、ハンダ流れによる短絡不良は発生しない。しかし、弾性率が小さくなりすぎると、弾性表面波素子２との密着強度が低下する。従って、短絡不良の発生がなく、密着強度が十分とされるダイシェア強度４０Ｎ以上の試料を合格と判定すると、試料番号３，４が合格となり、即ち、２３０℃における弾性率が０．２ＧＰａ〜０．４ＧＰａである樹脂を選定すれば良い。
【００３３】
従って表１での判定と表２での判定を総合すると、２５℃での弾性率が３．５ＧＰａ〜６ＧＰａ、かつ２３０℃での弾性率が０．２ＧＰａ〜０．４ＧＰａである樹脂が使用可能で、両者を満足する樹脂として試料番号４の樹脂が使用できる。
【００３４】
更に、温度１８０℃〜２５０℃におけるハンダバンプ部材４及びハンダ接合部材５の単位体積あたりの質量は、ハンダ組成により異なるが、５〜８ｇ／ｃｍ３程度であるのに対し、同じく温度１８０℃〜２５０℃における単位体積あたりの質量は、弾性表面波素子２が２〜３ｇ／ｃｍ３程度、側面外装部材６ｂが１〜２ｇ／ｃｍ３程度、上面外装部材６ａが１〜２ｇ／ｃｍ３程度と、ハンダバンプ部材４及びハンダ接合部材５の単位体積あたりの質量に対して小さな値となっているため、ハンダバンプ部材４及びハンダ接合部材５が溶融したときに弾性表面波素子２に浮力が生じ、ベース基板３の表面と弾性表面波素子２の一方主面との間隔を広げることをより確実にする。
【００３５】
更にまた、ハンダ接合部材５による接合を空気中または、窒素ガスなどの不活性ガス雰囲気中で行うことで、弾性表面波素子２、ベース基板３、及びハンダ接合部材５によって封止される空間は、空気又は不活性ガスで充填される。この空気や不活性ガスは、弾性表面波装置１がマザーボードに実装される際、実装時の熱によって膨張するため、ベース基板３の表面と弾性表面波素子２の一方主面との間隔を広げることを更に確実なものにする。
【００３６】
尚、上述の実施例では、電子部品素子に弾性表面波素子を用いた電子部品装置である弾性表面波装置で説明したが、電子部品素子にハンダパンプを用いてベース基板に接続し、且つ側面を外装部材で被覆した電子部品装置に広く利用できる。
【００３７】
【発明の効果】
本発明の電子部品装置によれば、電子部品素子の側面及びハンダ接合部材外周面に被着された側面外装部材が、ハンダバンプ部材及びハンダ接合部材の溶融時の体積膨張によるベース基板の表面と電子部品素子の一方主面との間の間隔の変化に追従する弾性率を有している。従って、電子部品装置をマザーボードに実装する際、ハンダリフロー等の熱でハンダバンプ部材及びハンダ接合部材が溶融し体積膨張が生じたとき、その体積膨張は妨げられることがないため、溶融したハンダの流れ出しがなく短絡を発生させる恐れがない。
【図面の簡単な説明】
【図１】本発明の電子部品装置の断面図である。
【図２】本発明の電子部品装置に用いるベース基板の平面図である。
【図３】本発明の電子部品装置の断面図であり、（ａ）はハンダバンプ部材及びハンダ接合部材の固化時の断面図であり、（ｂ）はハンダバンプ部材及びハンダ接合部材の溶融時の断面図である。
【図４】従来の電子部品装置の断面図である。
【符号の説明】
１・・・弾性表面波装置
２・・・弾性表面波素子
３・・・ベース基板
４・・・ハンダバンプ部材
５・・・ハンダ接合部材
６・・・外装部材
６ａ・・・上面外装部材
６ｂ・・・側面外装部材
８・・・接続電極
９・・・外周封止電極
１０・・・素子接続用電極
１１・・・外周封止導体膜[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an electronic component device in which electronic component elements are flip-chip mounted and sealed with solder.
[0002]
[Prior art]
Conventionally, with the demand for miniaturization of electronic component devices, flip-chip mounting that forms bumps on input / output electrodes of electronic component elements and joins and mounts the connection electrodes of the base substrate face down has been developed. Are known.
[0003]
FIG. 4 is a sectional view of a surface acoustic wave device 100 as an electronic component device in which such an electronic component element is flip-chip mounted and sealed with solder.
[0004]
The surface acoustic wave element 100, which is an electronic component element, is formed by solder bump members 103 so as to form a predetermined space between one main surface of the surface acoustic wave element 101 and the surface of the base substrate 102. The connection electrode 104 and the element connection electrode 105 of the base substrate 102 are connected. Further, an outer peripheral sealing electrode 106 is formed on the outer periphery of the surface acoustic wave element 101, and this portion and an outer peripheral sealing conductor film 107 of the base substrate 102 are joined by a solder joining member 108. A gap between the main surface and the surface of the base substrate 102 is hermetically sealed. As a result, the IDT electrode formed on one principal surface of the surface acoustic wave element 101 can prevent deterioration due to intrusion of moisture or the like, and can secure stable reliability performance.
As described above, the exterior resin layer 109 is formed by applying and curing an epoxy resin paste or the like from the other main surface side of the surface acoustic wave element 101 connected and sealed to the base substrate 102.
[0005]
[Patent Document 1]
Japanese Patent Application No. 2002-22258 [0006]
[Problems to be solved by the invention]
However, in the above-described conventional surface acoustic wave device 100, heat such as solder reflow is also applied to the inside of the surface acoustic wave device 100 when mounted on a motherboard. Then, heat is also applied to the solder bonding member 108 that bonds the outer peripheral sealing conductor film 107 of the base substrate 102. As a result, the solder joint member 108 expands due to heat and expands significantly in volume when remelted. The outer peripheral surface of the solder bonding member 108 and the side surface and the other main surface of the surface acoustic wave element 101 are covered with the exterior resin layer 109 and are firmly fixed. Causes the gap between the surface acoustic wave element 101 and the base substrate 102 to flow inward, resulting in a short circuit with the solder bump member 103, the connection electrode 104, or the element connection electrode 105. Was.
[0007]
In this case, in order to prevent the re-melted solder from flowing out, a short circuit can be prevented by providing a sufficient space between the solder bonding member 108 and the solder bump member 103, the connection electrode 104, or the element connection electrode 105. Since the dimensions of the surface acoustic wave element 101 and the base substrate 102 are increased, and the design is counter to the miniaturization of products, an effective solution of the problem has been desired.
[0008]
The present invention has been devised in view of the above-described problems, and an object of the present invention is to provide an electronic component device that prevents a short circuit due to melting when soldering inside when mounted on a motherboard.
[0009]
[Means for Solving the Problems]
In order to solve the above-described problems, an electronic component device of the present invention includes an electronic component element having a connection electrode and an outer peripheral sealing electrode formed on one main surface,
An element connection electrode connected to the connection electrode via a solder bump member, an outer peripheral sealing conductor film joined to the outer peripheral sealing electrode via a solder joining member, and a base substrate on which an external terminal electrode is formed, While connecting so that a predetermined interval is formed between the base substrate and the electronic component element,
In an electronic component device comprising a side surface exterior member disposed on a side surface of the electronic component element and an outer peripheral surface of the solder bonding member, the side surface exterior member may have a solder bump member and a solder bonding member at a melting temperature of the solder bump member and the solder bonding member. An electronic component device having an elastic modulus that follows a change in a space between the base substrate and the electronic component element caused by a volume expansion of the solder bonding member.
[0010]
Further, the side surface exterior member is a resin having thermoreversibility.
[0011]
Further, the side surface exterior member has an elastic modulus of 3.5 GPa to 6 GPa at a temperature of 25 ° C, and an elastic modulus of 0.2 GPa to 0.4 GPa at a temperature of 230 ° C.
[0012]
Further, the mass per unit volume at a temperature of 180 ° C. to 250 ° C. of the electronic component element and the side surface exterior member is smaller than the mass per unit volume at a temperature of 180 ° C. to 250 ° C. of the solder bump member and the solder bonding member. And
[0013]
Further, a space formed by the electronic component element, the base substrate, and the solder bonding member is filled with air or an inert gas.
[0014]
[Action]
According to the present invention, the electronic component element is connected to the base substrate so as to form a predetermined space between the base substrate and one main surface of the electronic component element, and the side surface of the electronic component element and the solder bonding member The outer peripheral surface is covered with a side exterior member. At the melting temperature of the side surface exterior member, the solder bump member, and the solder bonding member, there is an elastic modulus that follows a change in the space between the base substrate and the electronic component element caused by the volume expansion of the solder bump member and the solder bonding member. are doing. That is, when mounting the electronic component device on the motherboard, when the solder bump member and the solder bonding member are melted by heat such as solder reflow and volume expansion occurs, a force for lifting the electronic component element upward due to the stress due to the volume expansion. work. At this time, the side surface exterior member also expands at the same time, and follows the change in the distance between the surface of the base substrate and one main surface of the electronic component element. Therefore, unlike the related art, the solder in which the solder bump member and the solder bonding member are re-melted does not flow toward the inside of the gap between the electronic component element and the base substrate, and there is no danger of causing a short circuit.
[0015]
Further, according to the present invention, the mounting of the electronic component device on the motherboard is completed because the side exterior member is a thermoreversible resin, and the electronic component device returns to the original state when the temperature of the electronic component device returns to normal temperature. It does not impair the original reliability performance.
[0016]
Furthermore, according to the present invention, the mass per unit volume at a temperature of 180 ° C. to 250 ° C. of the electronic component element and the side exterior member is greater than the mass per unit volume at a temperature of 180 ° C. to 250 ° C. of the solder bump member and the solder bonding member. It is characterized by being small. With this, the buoyancy generated in the electronic component element when the solder bump member and the solder bonding member are melted enhances the force for lifting the electronic component element upward, so that the distance between the surface of the base substrate and one main surface of the electronic component element is increased. Is more sure to spread.
[0017]
Further, since the space formed and sealed by the electronic component element, the base substrate, and the solder bonding member is filled with air or an inert gas, the air or the inert gas is used to mount the electronic component device on the motherboard. The inert gas also expands, and when the solder bump member and the solder bonding member are melted, the force for lifting the electronic component element upward is further enhanced. That is, it is more certain that the space between the surface of the substrate and one main surface of the electronic component element is widened, and the prevention of short circuit due to the flow of solder becomes more certain.
[0018]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, an electronic component device of the present invention will be described in detail with reference to the drawings. In the description, a surface acoustic wave device which is one of electronic component devices using a surface acoustic wave device as an electronic component device will be described as an example.
[0019]
FIG. 1 is a sectional view of a surface acoustic wave device 1 of the present invention, and FIG. 2 is a plan view of a base substrate 3 used in the surface acoustic wave device 1.
The surface acoustic wave device (electronic component device) 1 includes a surface acoustic wave element (electronic component element) 2, a base substrate 3, a solder bump member 4, a solder bonding member 5, and an exterior member 6.
[0020]
The surface acoustic wave element 2 can be exemplified by a surface acoustic wave resonator, a surface acoustic wave filter, and the like. An interdigital transducer electrode (not shown) is formed on one main surface of a piezoelectric substrate 20 made of quartz, lithium niobate, lithium tantalate, or the like. In the present invention, a comb-shaped electrode and a reflector electrode are included, and the IDT electrode (hereinafter, simply referred to as an IDT electrode) is formed. Further, a connection electrode 8 connected to the IDT electrode is formed. Further, an annular outer peripheral sealing electrode 9 is formed on the entire outer periphery of the piezoelectric substrate 20 so as to surround the IDT electrode and the connection electrode 8. Each of these electrodes is formed of, for example, Al, Cu, or the like by a photolithography technique, and a layer of Cr, Ni, Au, or the like is formed on the surface as necessary.
[0021]
As shown in FIGS. 1 and 2, the base substrate 3 is made of, for example, a multi-layer substrate made of a glass-ceramic material or the like, and has on its surface an element connection electrode 10 facing the connection electrode 8 of the surface acoustic wave element 2, In addition, an annular outer peripheral sealing conductor film 11 facing the outer peripheral sealing electrode 9 is formed. An external terminal electrode 12 is formed on the bottom surface of the base substrate 3, and the element connection electrode 10 and the external terminal electrode 12 are connected by an internal wiring pattern including a via-hole conductor 13.
[0022]
In the surface acoustic wave element 2 described above, the connection electrode 8 and the element connection electrode 10 of the base substrate 3 are connected between one principal surface of the surface acoustic wave element 2 and the surface of the base substrate 3 by the solder bump member 4. An electrical connection is made at the same time as forming a predetermined gap. Further, by bonding the outer peripheral sealing electrode 9 and the outer peripheral conductor film 11 with the solder bonding member 5, the gap between one principal surface of the surface acoustic wave element 2 and the surface of the base substrate 3 is sealed. The inside can be kept airtight, and deterioration of the IDT electrode due to invasion of moisture or the like is prevented.
[0023]
In connecting and joining the surface acoustic wave element 2 and the base substrate 3, first, a solder bump member 4 and a solder joining member 5 are formed on the base substrate 2. The solder bump member 4 and the solder bonding member 5 are formed by applying paste solder to the surface of the element connection electrode 10 and the surface of the outer peripheral sealing conductor film 11, respectively. The solder that has been subjected to the primary heat treatment and the cleaning treatment. As a result, the applied solder has a semicircular cross-section on the element connection electrode 10 and the outer peripheral sealing conductor film 11, and furthermore, unnecessary flux components can be removed. Then, the surface acoustic wave element 2 is placed on the base substrate 3 on which the above-mentioned bump-shaped solder is formed, and is electrically connected by the solder bump member 4 by performing a reflow process. And a hermetic seal. As a result, a gap corresponding to the height of the solder bump member 4 and the solder bonding member 5 is formed between one principal surface of the surface acoustic wave element 2 and the surface of the base substrate 3 and is hermetically sealed. A stable surface acoustic wave can be vibrated on the main surface of the surface acoustic wave element 2.
[0024]
The exterior member 6 is attached to the surface acoustic wave element 2 electrically connected and mechanically joined to the base substrate 3 so as to cover the other main surface and the outer periphery of the side surface. The exterior member 6 includes an upper exterior member 6a that covers the other main surface of the surface acoustic wave element 2 and a side exterior member 6b that covers the side surface. However, the upper exterior member 6a is not necessarily required to be formed as long as sufficient strength against mechanical shock from the outside can be secured.
[0025]
Here, the feature of the present invention is that the side surface exterior member 6b is capable of changing the distance between the surface of the base substrate 3 and the surface acoustic wave element 2 due to volume expansion at the melting temperature of the solder bump member 4 and the solder bonding member 5. That is, it has a following elastic modulus. That is, when the surface acoustic wave device 1 is mounted on a motherboard, heat such as solder reflow causes the solder bump member 4 and the solder bonding member 5 to melt and expand in volume, resulting in a force for lifting the surface acoustic wave element 1 upward. At this time, since the side surface exterior member 6b is elongated, the space between the surface of the base substrate 3 and one main surface of the surface acoustic wave element 1 can be expanded. That is, as shown in FIG. 3A, the distance A between the surface of the base substrate 3 and one main surface of the surface acoustic wave element 2 before being mounted on the motherboard is the solder bump member 4 and the solder bonding member when mounted on the motherboard. As a result of melting of 5 and volume expansion, the interval B shown in FIG. At this time, the relationship of the interval A <the interval B is satisfied, and the interval between the surface of the base substrate 3 and one main surface of the surface acoustic wave element 2 is increased, so that the volume expansion of the solder bump member 4 and the solder bonding member 5 (particularly, the vertical direction). Movement) is not hindered. Therefore, there is no possibility that the molten solder flows in the gap between the surface acoustic wave element 2 and the base substrate 3 toward the inside and causes a short circuit unlike the related art.
[0026]
The side surface exterior member 6b is, for example, an epoxy resin component having thermoreversibility. For example, the epoxy resin component contains a silicone resin elastic component together with an inorganic filler and a curing agent component. The elastic modulus can be controlled by controlling the silicone resin elastic component. Its elastic modulus is 3.5 GPa to 6 GPa at a temperature of 25 ° C., and 0.2 GPa to 0.4 GPa at a temperature of 230 ° C. With such a resin, at room temperature, for example, at 25 ° C., it has the strength necessary to protect the surface acoustic wave element 2 from an external impact, and also suppresses warping due to shrinkage of the resin during curing. In addition, at a temperature at which the solder bump member 4 and the solder joint member 5 melt, for example, at 230 ° C., the elastic modulus decreases, so that the solder bump member 4 and the solder joint member 5 deform according to the volume expansion at the time of melting, and The distance between the surface of the substrate 3 and one main surface of the surface acoustic wave element 2 can be changed. Therefore, there is no short-circuit failure due to solder flowing out, and the adhesion strength with the surface acoustic wave element 2 can be secured.
[0027]
This side exterior member 6b was evaluated using ten kinds of resins having different elastic moduli. The elastic modulus of the resin at 25 ° C. is different between 1.5 GPa and 8 GPa. The surface acoustic wave device 1 in which the side surface exterior member 6b was formed of the ten kinds of resins was manufactured. At the same time, 30 mm square substrates were also made of resin alone for evaluation of warpage. Regarding the curing conditions of the resin, heating was performed at 100 ° C. for 1 hour and at 150 ° C. for 3 hours. Next, the produced surface acoustic wave device 1 was naturally dropped on a concrete floor from a height of 1 m, a drop test for checking whether or not cracking or chipping occurred in the resin, and the amount of warpage of a 30 mm square substrate was measured. . Table 1 shows the elastic modulus of these resins at 25 ° C., the number of defects in the drop test, and the evaluation results of the substrate warpage.
[0028]
[Table 1]

[0029]
If the elastic modulus of the resin is small, the strength is deteriorated, so that cracking or chipping occurs in a drop test. When the elastic modulus increases, the resin shrinks when it cures, causing a large warp, which adversely affects the electrical characteristics of the surface acoustic wave device. Therefore, when a sample having a warpage of 0.1 mm or less, which does not cause a defect in the drop test and does not adversely affect the electrical characteristics of the surface acoustic wave device, is judged to be acceptable, sample numbers 4, 5, 6, and 7 pass. That is, a resin having an elastic modulus at 25 ° C. of 3.5 GPa to 6 GPa may be selected.
[0030]
Next, using a sample in which a resin layer was formed on a surface acoustic wave device 1 having a side surface exterior member 6b made of the same ten kinds of resins and a surface acoustic wave element 2 having a 1.8 mm square for evaluation of adhesion strength, a solder reflow was performed. After the treatment, the number of occurrences of short-circuit failure due to solder flowing out was examined, and the adhesive strength of the resin was measured with a die shear strength meter. At this time, the elastic modulus at 230 ° C. is different between 0.1 GPa and 1.3 GPa, and the sample numbers shown in Table 1 and 2 are the same. Table 2 shows the evaluation results of the elastic modulus at 230 ° C., the number of occurrences of short-circuit failure, and the adhesion strength of these resins.
[0031]
[Table 2]

[0032]
If the elastic modulus at 230 ° C. is small, the volume expansion of the molten solder can be sufficiently absorbed, so that short-circuit failure due to solder flow does not occur. However, when the elastic modulus is too small, the adhesion strength with the surface acoustic wave element 2 is reduced. Accordingly, when a sample having a die shear strength of 40 N or more, which has no short-circuit failure and sufficient adhesion strength, is judged to be acceptable, samples Nos. 3 and 4 pass, that is, the elastic modulus at 230 ° C is 0.2 GPa to 0 GPa. A resin having a pressure of 4 GPa may be selected.
[0033]
Therefore, when the judgment in Table 1 and the judgment in Table 2 are combined, it is possible to use a resin having an elastic modulus at 25 ° C. of 3.5 to 6 GPa and an elastic modulus at 230 ° C. of 0.2 GPa to 0.4 GPa. Thus, the resin of sample number 4 can be used as a resin satisfying both.
[0034]
Furthermore, the mass per unit volume of the solder bump member 4 and the solder bonding member 5 at a temperature of 180 ° C. to 250 ° C. varies depending on the solder composition, but is about 5 to 8 g / cm 3. Are about 2 to 3 g / cm3 for the surface acoustic wave element 2, about 1 to 2 g / cm3 for the side exterior member 6b, about 1 to 2 g / cm3 for the top exterior member 6a, and the solder bump member 4 and Since the solder bonding member 5 has a small value with respect to the mass per unit volume, when the solder bump member 4 and the solder bonding member 5 are melted, buoyancy is generated in the surface acoustic wave element 2, and the surface of the base substrate 3 The distance between the surface acoustic wave element 2 and one main surface is more reliably increased.
[0035]
Furthermore, the space sealed by the surface acoustic wave element 2, the base substrate 3, and the solder bonding member 5 is formed by performing the bonding by the solder bonding member 5 in air or an inert gas atmosphere such as nitrogen gas. , Filled with air or inert gas. When the surface acoustic wave device 1 is mounted on the motherboard, the air and the inert gas expand due to heat generated during mounting, and thus increase the distance between the surface of the base substrate 3 and one principal surface of the surface acoustic wave element 2. Make things more certain.
[0036]
In the above-described embodiment, the surface acoustic wave device which is an electronic component device using a surface acoustic wave element as an electronic component element has been described. However, the electronic component element is connected to a base substrate using a solder pump, and the side surface is It can be widely used for electronic component devices covered with exterior members.
[0037]
【The invention's effect】
According to the electronic component device of the present invention, the side surface exterior member attached to the side surface of the electronic component element and the outer peripheral surface of the solder joint member is formed between the surface of the base substrate due to volume expansion when the solder bump member and the solder joint member melt. It has an elastic modulus that follows a change in the distance between the component element and one main surface. Therefore, when mounting the electronic component device on the motherboard, when the solder bump member and the solder bonding member are melted by heat such as solder reflow and the volume expansion occurs, the volume expansion is not hindered. There is no danger of short-circuiting.
[Brief description of the drawings]
FIG. 1 is a sectional view of an electronic component device of the present invention.
FIG. 2 is a plan view of a base substrate used in the electronic component device of the present invention.
3A and 3B are cross-sectional views of the electronic component device of the present invention, in which FIG. 3A is a cross-sectional view of a solder bump member and a solder bonding member when they are solidified, and FIG. FIG.
FIG. 4 is a cross-sectional view of a conventional electronic component device.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Surface acoustic wave device 2 ... Surface acoustic wave element 3 ... Base substrate 4 ... Solder bump member 5 ... Solder joining member 6 ... Exterior member 6a ... Top exterior member 6b ..Side member 8 ... Connection electrode 9 ... Outer periphery sealing electrode 10 ... Element connection electrode 11 ... Outer periphery sealing conductor film

Claims (5)

On the other hand, an electronic component element having a connection electrode and an outer peripheral sealing electrode formed on a main surface,
An element connection electrode connected to the connection electrode via a solder bump member, an outer peripheral sealing conductor film joined to the outer peripheral sealing electrode via a solder joining member, and a base substrate on which an external terminal electrode is formed, Along with joining such that a predetermined space is formed between the base substrate and the electronic component element,
An electronic component device comprising a side exterior member disposed on a side surface of the electronic component element and an outer peripheral surface of the solder bonding member,
The side exterior member has an elasticity that follows a change in the distance between the base substrate and the electronic component element caused by volume expansion of the solder bump member and the solder joint member at a melting temperature of the solder bump member and the solder joint member. An electronic component device having a rate. The electronic component device according to claim 1, wherein the side surface exterior member is a resin having thermoreversibility. The said side surface exterior member has an elastic modulus in the temperature of 25 degreeC from 3.5 GPa to 6 GPa, and the elasticity in the temperature of 230 degreeC is 0.2 GPa-0.4 GPa, The Claims 1 or 2 characterized by the above-mentioned. Electronic component device according to the above. The mass per unit volume at a temperature of 180 ° C. to 250 ° C. of the electronic component element and the side exterior member is smaller than the mass per unit volume at a temperature of 180 ° C. to 250 ° C. of the solder bump member and the solder bonding member. The electronic component device according to claim 1. The electronic component device according to claim 1, wherein a space formed by the electronic component element, the base substrate, and the solder bonding member is filled with air or an inert gas.

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