JP2004193621A - 金属バリア接着性が改良された、シリコン−炭素−酸素誘電体を有する半導体デバイス、及びその形成方法 - Google Patents

金属バリア接着性が改良された、シリコン−炭素−酸素誘電体を有する半導体デバイス、及びその形成方法 Download PDF

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Publication number
JP2004193621A
JP2004193621A JP2003412698A JP2003412698A JP2004193621A JP 2004193621 A JP2004193621 A JP 2004193621A JP 2003412698 A JP2003412698 A JP 2003412698A JP 2003412698 A JP2003412698 A JP 2003412698A JP 2004193621 A JP2004193621 A JP 2004193621A
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JP
Japan
Prior art keywords
dielectric layer
layer
forming
exposing
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2003412698A
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English (en)
Japanese (ja)
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JP2004193621A5 (https=
Inventor
Richard A Faust
エイ、フォースト リチャード
Noel M Russell
エム、ラッセル ノエル
Li Chen
チェン リ
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Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JP2004193621A publication Critical patent/JP2004193621A/ja
Publication of JP2004193621A5 publication Critical patent/JP2004193621A5/ja
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H10W20/085—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures involving intermediate temporary filling with material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/076—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/096—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by contacting with gases, liquids or plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/082—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts the openings being tapered via holes

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP2003412698A 2002-12-12 2003-12-11 金属バリア接着性が改良された、シリコン−炭素−酸素誘電体を有する半導体デバイス、及びその形成方法 Abandoned JP2004193621A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/318,309 US6720255B1 (en) 2002-12-12 2002-12-12 Semiconductor device with silicon-carbon-oxygen dielectric having improved metal barrier adhesion and method of forming the device

Publications (2)

Publication Number Publication Date
JP2004193621A true JP2004193621A (ja) 2004-07-08
JP2004193621A5 JP2004193621A5 (https=) 2006-12-28

Family

ID=32043034

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003412698A Abandoned JP2004193621A (ja) 2002-12-12 2003-12-11 金属バリア接着性が改良された、シリコン−炭素−酸素誘電体を有する半導体デバイス、及びその形成方法

Country Status (3)

Country Link
US (1) US6720255B1 (https=)
EP (1) EP1429383B1 (https=)
JP (1) JP2004193621A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005045176A (ja) * 2003-07-25 2005-02-17 Fujitsu Ltd 半導体装置及びその製造方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050067702A1 (en) * 2003-09-30 2005-03-31 International Business Machines Corporation Plasma surface modification and passivation of organo-silicate glass films for improved hardmask adhesion and optimal RIE processing
KR100571395B1 (ko) * 2004-05-11 2006-04-14 동부아남반도체 주식회사 반도체 소자의 제조 방법
US20070066060A1 (en) * 2005-09-19 2007-03-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and fabrication methods thereof
US8946782B2 (en) 2012-04-19 2015-02-03 International Business Machines Corporation Method for keyhole repair in replacement metal gate integration through the use of a printable dielectric
US11462397B2 (en) * 2019-07-31 2022-10-04 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of forming the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6054379A (en) * 1998-02-11 2000-04-25 Applied Materials, Inc. Method of depositing a low k dielectric with organo silane
EP1081751A3 (en) 1999-09-02 2003-03-19 Applied Materials, Inc. Methods of pre-cleaning dielectric layers of substrates
US6936533B2 (en) 2000-12-08 2005-08-30 Samsung Electronics, Co., Ltd. Method of fabricating semiconductor devices having low dielectric interlayer insulation layer
US6562416B2 (en) 2001-05-02 2003-05-13 Advanced Micro Devices, Inc. Method of forming low resistance vias

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005045176A (ja) * 2003-07-25 2005-02-17 Fujitsu Ltd 半導体装置及びその製造方法
US7189643B2 (en) 2003-07-25 2007-03-13 Fujitsu Limited Semiconductor device and method of fabricating the same

Also Published As

Publication number Publication date
EP1429383A3 (en) 2008-08-13
EP1429383A2 (en) 2004-06-16
EP1429383B1 (en) 2011-07-20
US6720255B1 (en) 2004-04-13

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