JP2004193456A - Method for manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, while reducing the manufacturing and materials cost lowered by decreasing the number of manufacturing steps, in a manufacturing process of resin protrusions formation on a wafer. <P>SOLUTION: In this method for manufacturing the semiconductor device, an insulating layer is formed on the wafer provided with an electrode, an opening is provided on the insulating layer-covered electrode, a conducting material pattern is formed extending from the exposed electrode to the resin protrusions formed on the insulating material, and a solder bump is mounted on the resin protrusions patterned in this manner for the formation of an electrode terminal in a direction perpendicular to the wafer. In the resin protrusions formation process of this method, since the resin protrusions are formed at a given location on the insulating layer, by directly depositing a liquid resin discharged from a fine nozzle onto the insulating layer, the conventionally indispensable steps of resin application, exposure, and development are dispensed with. As a result, the resin-built protrusion formation time is shortened. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of manufacturing a semiconductor device that improves the height variation of resin protrusions formed on a silicon wafer, the yield of resin, and the reliability of semiconductor chips.
[0002]
[Prior art]
Conventionally, as a semiconductor package structure, for example, a package in which a semiconductor chip is integrated with a resin (so-called DIP (Dual Inline Package) or QFP (Quad Flat Package)) has been mainstream. In these semiconductor packages, a metal lead electrode is arranged on a peripheral side surface of a semiconductor chip, the semiconductor chip and the metal lead electrode are connected by wire bonding, and then sealed with a resin.
[0003]
On the other hand, as a semiconductor package structure that has rapidly spread in recent years, there is a package called a CSP (Chip Size Package), for example. The CSP is a semiconductor chip having the same number of electrode terminals and the same projected area by adopting a so-called BGA (Ball grid array) technology in which solder-shaped electrodes are arranged in a grid on a flat wide surface of a semiconductor package. Can be mounted at high density on a printed wiring board with a smaller area than before.
[0004]
That is, in the semiconductor package using the BGA technology, the area of the package is substantially equal to the area of the semiconductor chip. Therefore, such a structure called a chip scale package (CSP) has been developed together with the above-mentioned BGA technology, and has greatly contributed to the reduction in size and weight of electronic devices.
[0005]
The CSP is obtained by cutting a silicon wafer having a circuit formed in an inner layer in advance into a semiconductor chip, and performing a package process on the semiconductor chip to complete a semiconductor package.
[0006]
On the other hand, in a manufacturing method called “wear level CSP”, an insulating layer, a rewiring layer, a sealing resin layer, and the like are formed on the silicon wafer, and solder bumps are formed on the sealing resin layer. Then, in the final step, the semiconductor chip having a package structure can be obtained by cutting the wafer into predetermined chip dimensions.
[0007]
In other words, since these circuits (insulating layer, rewiring layer, and sealing resin layer) are deposited on the entire wafer and the wafer is diced in the final step, the size of the cut chip itself becomes the size of the semiconductor package. , And can be mounted on a mounting substrate with a minimum projected area.
[0008]
Here, a structure of a conventional wafer level CSP (hereinafter, referred to as CSP) will be described with reference to FIG.
[0009]
As shown in FIG. 8, the structure of the CSP includes a silicon wafer (hereinafter, referred to as a wafer) 101 on which circuits have already been formed, electrodes 102 formed on the wafer 101, and entire surfaces of the wafer 101 and the electrodes 102. An insulating layer 103 formed to cover the insulating layer 103, a via hole opened on the electrode 102 of the insulating layer 103, and a resin protrusion 104 erected at a predetermined position on the insulating layer 103 away from the via hole. A rewiring layer 105 formed by wiring a conductive material from the via hole to the resin protrusion 104; a solder bump 108 placed on the conductive layer 106 of the resin protrusion 104; And a sealing resin 107.
[0010]
Next, a method for manufacturing the conventional CSP will be described. 9A to 9F are cross-sectional views illustrating a conventional CSP manufacturing method in the order of steps.
[0011]
First, as shown in FIG. 9A, a wafer 101 having a flat surface is prepared, electrodes 102 are formed on the wafer 101 by plating, and an insulating layer 103 is formed on the entire surface of the wafer 101 so as to cover the electrodes 102. I do. Then, a via hole is opened in the insulating layer 103 on the electrode 102 to expose the electrode 102.
[0012]
Next, as shown in FIG. 9B, a photosensitive resin is applied to the entire surface of the wafer 101 so as to have a uniform thickness to form a photosensitive resin layer 104, and a photoresist is applied on the photosensitive resin layer 104. To form a photoresist film. Then, a mask is put on the resist film and exposed (exposure step), and the exposed portion is dissolved with a chemical solution (development step) to form a resist mask 110.
[0013]
Subsequently, as shown in FIG. 9C, the photosensitive resin layer 104 is etched using the resist mask 110 as a mask to form a projection having a trapezoidal cross section.
[0014]
Then, as shown in FIG. 9D, the resist mask 110 remaining on the upper surface of the protrusion formed in the previous step is removed, and then baked to complete the resin protrusion 104.
[0015]
Next, as shown in FIG. 9E, a rewiring layer 105 is formed of a conductive material so as to cover the entirety of the resin protrusion 104 from the electrode 102.
[0016]
Then, as shown in FIG. 9F, a solder bump 108 is placed on the conductive layer 106 on the resin protrusion 104, and a sealing resin 107 is filled around the resin protrusion 104 and sealed. By forming the resin layer 107, an electrode terminal of the CSP is completed.
[0017]
The CSP provided with the electrode terminals thus formed is then diced to a predetermined size.
[0018]
Here, the application step of the photosensitive resin shown in FIG. 9B is specifically performed by a spin coating method, a lamination method, or the like.
[0019]
In the spin coating method, a liquid photosensitive resin is dropped on a wafer 101, the wafer 101 is rotated, and the photosensitive resin is uniformly spread by centrifugal force to form a photosensitive resin layer. This is a manufacturing method in which the photosensitive resin is processed into a desired shape by patterning. On the other hand, in the laminating method, a sheet-like photosensitive resin sheet is attached on the wafer 101, and this is also processed by photolithography to pattern the photosensitive resin into a desired shape.
[0020]
Further, as a method of processing the photosensitive resin, there is a method called a screen printing method. In the screen printing method, a steel plate having holes is arranged on a wafer 101, and a resin is applied so as to be embedded from the steel plate, and the resin is processed into a desired shape.
[0021]
[Patent Document 1]
Japanese Patent Application No. 11-169008
[0022]
[Patent Document 2]
International Publication No. 00/77844 pamphlet
[0023]
[Non-patent document 1]
"Nikkei Electronics," published by Nikkei BP, June 17, 2002, p. 67-78, "Blowing down the limits of device miniaturization with inkjet printing"
[0024]
[Problems to be solved by the invention]
In general, the thermal expansion coefficient of a semiconductor package is different from that of a printed wiring board. For this reason, there is a problem that stress based on the difference in the coefficient of thermal expansion is concentrated on the electrode terminals of the semiconductor package, thereby cracking the electrode terminals and causing a connection failure.
[0025]
Such a problem can be avoided by forming the resin protrusion 104 to be high and dispersing the stress applied to the electrode terminals. It is said that the height of the resin protrusion 104 needs to be about 100 μm to disperse the stress applied to the electrode terminals.
[0026]
However, when the above-described spin coating, laminating, and screen printing methods are applied as they are, the following problems occur.
[0027]
1) When the photosensitive resin layer is formed by using the spin coating method, the thickness of the formed photosensitive resin layer becomes larger toward the periphery of the wafer 101. This phenomenon is considered to be caused by the resin pull-in due to the surface tension of the liquid photosensitive resin, but the range of the peripheral portion where the film thickness cannot be controlled extends to a width of 10 mm from the peripheral edge. For this reason, the height of the resin protrusion 104 formed differs depending on the position on the wafer 101, so that there is a problem that the height of the resin protrusion 104 varies.
[0028]
2) When the photosensitive resin layer is formed by a spin coating method or a laminating method, at least an exposure step, a development step, and a curing step are required to form the resin protrusion 104 from the photosensitive resin layer. Become. Therefore, there is a problem that the number of manufacturing steps is large and the manufacturing steps are complicated.
[0029]
3) Further, when the resin protrusion 104 is formed by using a spin coating method or a lamination method, even if a photosensitive resin is applied to the entire surface of the wafer 101, the photosensitive resin other than the pattern is removed in the final step by patterning. Therefore, there is a problem that the yield of the material relating to the resin or the like is reduced. In particular, when a resin is applied by spin coating, the yield is 20% or less.
[0030]
4) Further, when pattern printing is performed on the resin using the screen printing method, the depth of the hole formed in the screen increases as the height of the desired resin protrusion 104 increases, depending on the viscosity and the like of the resin. Since the depth becomes deeper, it becomes difficult to embed the hole when embedding the resin in the hole. As a result, there is a problem that it is difficult to form the resin protrusion 4 having a high aspect ratio.
[0031]
SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has as its object to improve the height variation of resin protrusions formed on a silicon wafer, the yield of resin, and the reliability of semiconductor chips. An object of the present invention is to provide a method for manufacturing a device.
[0032]
[Means for Solving the Problems]
In order to achieve the above object, the invention according to claim 1 includes a step of forming an insulating layer on a wafer provided with an electrode, opening and exposing the electrode covered with the insulating layer, Forming a resin protrusion on the insulating layer, patterning a conductive material from the electrode to the resin protrusion, placing a solder bump on the patterned resin protrusion, A method of manufacturing a semiconductor device in which the periphery of a protrusion is sealed with a resin, wherein the step of forming the resin protrusion includes a step of directly discharging a liquid resin onto an insulating layer, depositing the resin in a column shape, and then performing a heat treatment. Is the gist.
[0033]
The present invention provides a method of manufacturing electrode terminals of a semiconductor package, wherein when forming a resin protrusion on an insulating layer, a resin dot having a spread of 20 μm and a height of 20 μm after discharge directly to an arbitrary position on the insulating layer is formed. The resin is ejected and deposited to a predetermined height, and then the deposited columnar resin is baked and cured to form a thin resin projection having a high aspect ratio.
[0034]
Further, in the present invention, in the step of forming a resin protrusion, a liquid resin is deposited and heat-treated to a predetermined height as a first step to form a first resin protrusion, and then a second step formed as a second step is performed. A thin resin having a higher aspect ratio is formed by further discharging a liquid resin onto the first resin protrusion and performing deposition and heat treatment. Note that the deposition / heat treatment step is not limited to one time, and may be repeated a plurality of times to form a higher resinous protrusion.
[0035]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0036]
1A to 1E are cross-sectional views sequentially showing a manufacturing process of a semiconductor package according to an embodiment of the present invention.
[0037]
First, as shown in FIG. 1A, a silicon wafer (hereinafter simply referred to as a wafer) 1 provided with an integrated circuit (not shown) and its electrode 2, for example, an Al pad or the like, is prepared. An insulating layer 3 is formed. The insulating layer 3 is made of, for example, polyimide, epoxy or silicone resin, and has a thickness of about 5 to 50 μm. This insulating layer 3 is formed by, for example, a spin coating method, a laminating method, or the like. Next, a via hole is opened on the electrode 2 of the insulating layer 3 to expose the electrode 2. This via hole can be formed by patterning by photolithography after forming the insulating layer 3.
[0038]
Subsequently, as shown in FIG. 1 (b), an ink jet type resin discharge device is arranged at a predetermined position on the insulating layer 3 away from the electrode 2, and a liquid resin is applied onto the insulating layer 3 from a nozzle of the resin discharge device. By directly discharging the resin, the resin is stacked in the direction perpendicular to the insulating layer 3. At this time, the discharge amount per discharge is an amount having a spread of 20 μm and a height of 20 μm after dropping. The deposition height is about 20 to 100 μm. Further, the material of this resin is polyimide, epoxy or silicone resin.
[0039]
Subsequently, as shown in FIG. 1 (c), after the resin is piled up to a predetermined height, it is cured by heat treatment in an oven or the like. Thereby, the resin protrusion 4 having a trapezoidal cross section can be formed.
[0040]
Next, as shown in FIG. 1D, a rewiring layer 5 is formed to electrically connect the electrode 2 and the resin protrusion 4 to each other. Here, the material used for the rewiring layer 5 is a conductive material for wiring containing Cu, Cr or Ti. A specific method for forming the rewiring layer 5 is to apply the conductive material for wiring to the entire surface of the electrode 2, the insulating layer 3 and the resin protrusion 4 or a necessary region by a sputtering method to first form a metal layer. Then, a resist film (not shown) is formed on the metal layer, and is processed into a shape that protects the electrode 2, the resin protrusion 4, and a predetermined region sandwiched therebetween. Unnecessary portions that are not protected by the resist mask are removed by etching to form wiring paths. Finally, the resist mask on the wiring path is removed with a chemical solution to complete the rewiring layer 5. The thickness of the rewiring layer 5 completed in this manner is about 5 to 50 μm. The method for forming the metal layer is not limited to the sputtering method, but may be an evaporation method, a coating method, a chemical vapor deposition method (CVD), or a combination thereof.
[0041]
Subsequently, as shown in FIG. 1E, a sealing resin 7 is deposited to a thickness of about 10 to 150 μm on the insulating layer 3 and the rewiring layer 5 to protect the surfaces of the insulating layer 3 and the rewiring layer 5. I do. At this time, the sealing resin 7 is not deposited on the conductive layer 6 on the resin protrusion 4. Next, the solder bumps 8 are placed on the redistribution layer 5 on the resin protrusion 4 to complete the electrode terminals of the semiconductor package. Here, as the sealing resin 7 used for the deposition, polyimide, epoxy or silicone resin is preferably used. When the solder bumps 8 are placed, it is important that the center of the solder bumps 8 and the center of the resin protrusions 4 match in plan view (the direction in which the wafer 1 is viewed from above). . With such mounting, the stress can be uniformly dispersed.
[0042]
Next, the ink jet type resin ejection device used in the step of FIG. 1B will be described.
[0043]
This resin discharge device is an application of an ink jet discharge technology generally used in a printing device such as a printer, and is improved for manufacturing electrode terminals of a semiconductor package. In other words, a general printer performs printing by discharging ink on paper, and this resin discharge device discharges a resin having a different viscosity and composition from ink directly onto the insulating layer 3 to deposit and form electrode terminals.
[0044]
Specifically, the resin discharge device includes a liquid tank for storing a liquid resin, a small-diameter nozzle provided at the bottom of the liquid tank, a piezoelectric element disposed at the top of the liquid tank and deformed by applying pressure, and a piezoelectric element. At least a voltage control unit that supplies a voltage, a control unit (such as a CPU) that controls the voltage control unit and other functional units, and an external input device (such as a keyboard). Here, the piezoelectric element is, for example, a piezo element.
[0045]
Next, the operation of the resin discharge device will be described.
The liquid tank of such a resin discharge device is previously filled with a liquid resin having a predetermined viscosity. Therefore, first, a nozzle tip is arranged at a predetermined position on the insulating layer 3. In this arrangement method, for example, a camera is provided in the vicinity of the nozzle, and positioning is performed by operating an external input device while monitoring an image captured by the camera in real time with a personal computer (personal computer). Next, after the position is set, when the ejection command is transmitted to the control unit via the external input device, the control unit instructs the voltage control unit to output a predetermined voltage, whereby the voltage control unit applies a predetermined voltage to the piezo element. . The piezo element to which the predetermined voltage is applied presses the resin in the liquid tank and sends the resin to the tip of a nozzle connected to the liquid tank. Thereby, the resin rises from the tip of the nozzle. Next, this time, the applied voltage is lowered to contract the piezo element, so that the resin is dropped on the insulating layer 3 from the nozzle tip.
[0046]
The positioning of the tip of the nozzle is set at the monitoring setting. However, the present invention is not limited to this. For example, the wafer 1 is placed on a movable table, and the designated position is determined based on the coordinate data of the wafer 1 stored in advance on a magnetic storage disk or the like. The positioning may be performed by moving the movable table so that the nozzle and the nozzle tip coincide with each other.
[0047]
When such a resin discharge device is used, a predetermined amount of liquid resin can be directly discharged to a predetermined position on the insulating layer 3, so that a thin and high resin can be stacked on the insulating layer 3. Further, by changing the voltage value applied to the piezo element, the discharge amount per discharge can be adjusted, so that deposition in a narrow area is possible.
[0048]
In the present embodiment, it has been shown that the deposition of the resin protrusion 4 can be realized by an ink jet method using a piezo element. However, the resin discharge device is not limited to this, and a thermal ink jet method or a bubble jet method is used. (Registered trademark) system.
[0049]
(Example 1)
Next, the results of measuring the height variations of the electrode terminals manufactured using the above-described resin discharge device will be described with reference to FIGS. In addition, the experimental results are compared with the experimental results obtained by the conventional method, the height variation, which is a conventional problem, is verified, and the optimum conditions of the method for manufacturing the electrode terminal of the semiconductor package according to the present invention are examined.
[0050]
Therefore, first, as shown in FIG. 2A, a 6-inch wafer 1 having a flat surface is prepared, and an insulating layer 3 is formed on the entire surface of the wafer 1. Next, a nozzle of the resin discharge device is arranged on a predetermined position of the wafer 1.
[0051]
Next, an amount capable of forming a dot having a diameter of 50 μm per drop is dropped. Then, each time one drop of resin was dropped, the position of the nozzle was shifted to form a layer of non-photosensitive acrylic resin.
[0052]
Here, the resin is a non-photosensitive acrylic resin. This non-photosensitive acrylic resin has a viscosity of 400 dPa · s at room temperature and has a property of being cured by heat treatment.
[0053]
As shown in FIG. 2A, there are irregularities on the resin surface immediately after the ejection. Then, this was subjected to hard baking in an oven at 150 ° C. for 2 hours to form a resin protrusion 4 having a height of 40 μm and a width of 200 μ as shown in FIG. 2B.
[0054]
Further, by repeating the above steps, a large number of resin protrusions 4 were formed on the insulating layer 3 of the wafer 1 at a pitch of 0.5 mm. Nine suitable points were selected from the center of the wafer 1 toward the periphery from the resin protrusions 4 thus manufactured, and their heights were measured. FIG. 3 shows the measurement results.
[0055]
The upper part of the table shown in FIG. 3 shows the distance from the center of the wafer 1 to the measurement position. The lower part shows the height of the resin protrusion 4 at each measurement position. As shown in the figure, the height of the resin protrusion 4 at the center of the wafer 1 (distance “0”) is 39.2 μm. The height at the position of "+73 mm", which is the edge of the wafer 1, was 39.0 .mu.m, and the height at the position of "-73 mm" was 38.5 .mu.m. The average of the measured heights of the nine resin protrusions 4 was 38.8 μm. Further, the height variation of the nine resin protrusions 4 measured was 5%.
[0056]
Based on the above results, a non-photosensitive acrylic resin was used as the liquid resin, and an amount capable of forming a dot having a diameter of 50 μm per drop was dropped on the insulating layer 3 and hard-baked in an oven at 150 ° C. for 2 hours. By performing the above, a resin protrusion 4 having a height of 40 μm can be obtained, and it has been shown that the height variation at this time can be suppressed to 5%.
[0057]
(Comparative Example 1)
Next, a comparative example 1 corresponding to the example 1 will be described with reference to FIG.
First, as in the first embodiment, a wafer 6 having a flat surface of φ6 inches is prepared, and an insulating layer 3 is formed on the entire surface of the wafer 1. Next, a photosensitive epoxy resin (viscosity: 400 dPa · s) is dropped on the insulating layer 3 and centrifugally diffused by using a spin coating method to form a photosensitive epoxy resin film. Baking and temporary drying are performed for a minute to form a photosensitive epoxy resin film. Then, a photoresist film is formed on this film. Next, exposure is performed by covering a mask on the resist film, and the exposed portion is dissolved with a chemical solution to form a resist mask. Subsequently, the photosensitive epoxy resin film is etched using the resist mask as a mask to form a protrusion. Finally, the resist mask remaining on the protrusion was removed, and curing was performed in an oven at 150 ° C. for 90 minutes to form a resin protrusion 4.
[0058]
Further, the above steps were repeated, and a large number of resin protrusions 4 were formed on the insulating layer 3 of the wafer 1 at a pitch of 0.5 mm. Then, in the same manner as in Example 1, nine suitable points were selected from the center of the wafer 1 toward the periphery thereof, and their heights were measured. FIG. 4 shows the measurement results.
[0059]
As shown in FIG. 4, the height of the resin protrusion 4 at the center of the wafer 1 (distance “0”) is 41.2 μm. The height at the position of "+73 mm" on the periphery of the wafer 1 was 52.3 [mu] m, and the height at the position of "-73 mm" was 50.5 [mu] m. The average of the measured heights of the nine resin protrusions 4 was 42.4 μm. Further, the height variation of the nine resin protrusions 4 measured was 32%.
[0060]
From the above results, film forming, exposing, and developing steps were performed using a photosensitive epoxy resin having the same viscosity as in Example 1 according to a conventional method for manufacturing an electrode terminal. It was shown that the height variation of the protrusion 4 was 32%.
[0061]
Therefore, when the result of Example 1 according to the present embodiment is compared with the result of Comparative Example 1, when the resin protrusion 4 is produced by the manufacturing method of Example 1, it is possible to suppress the variation in height. .
[0062]
(Example 2)
Next, a method of manufacturing the resin protrusion 4 having a height of 100 μm using a resin discharge device will be described with reference to FIG. In the second embodiment, the discharged resin is deposited, and the resin is stacked in two or three steps while repeating the deposition and the temporary curing to deposit and form the resin protrusion 4.
[0063]
Specifically, first, as shown in FIG. 5A, a φ1 inch wafer 1 having a flat surface is prepared, and an insulating layer 3 is formed on the entire surface of the wafer 1. Next, a nozzle of the resin discharge device is arranged on a predetermined position of the wafer 1. Then, the amount of resin per drop is dropped so that a dot having a diameter of 20 μm can be formed after dropping, and then the position of the nozzle is shifted every time one drop of resin is dropped to form a cylindrical resin layer having a diameter of 40 μm. Form. Then, three layers of resin layers having the same thickness as this resin layer are deposited so as to overlap with this resin layer. FIG. 5A is a first resin discharge step showing a state in which the resin layer is deposited three times at the same position.
[0064]
Here, in order to solidify the first resin, hard baking was performed on a hot plate at 90 ° C. for 3 minutes to temporarily harden the resin.
[0065]
Here, a non-photosensitive polyimide resin was used as the resin. This non-photosensitive polyimide resin has a viscosity of 500 dPa · s at room temperature and has a property of being cured by heat treatment.
[0066]
Subsequently, as shown in FIG. 5B, the resin was discharged three times again on the resin layer in which the first resin was temporarily cured to form a resin layer having a height of about 120 μm. This was cured in an oven at 300 ° C. for 1 hour to form a resin protrusion 4 having a diameter of 40 μm and a height of 100 μ.
[0067]
According to the above results, a non-photosensitive polyimide resin (viscosity: 500 dPa · s) was used as the liquid resin, and an amount capable of forming a dot having a diameter of 20 μm per drop was dropped on the insulating layer 3. The resin is discharged so as to form a column, the resin is repeatedly deposited on the column three times, and after pre-curing, the resin is discharged again at the same position on the column three times. By performing the curing, a resin protrusion 4 having a diameter of 40 μm and a height of 100 μm and a high aspect ratio, which could not be formed by the conventional technique, could be formed.
[0068]
(Modification 1)
Next, a first modification according to the embodiment of the present invention will be described with reference to FIG.
FIG. 6 is an enlarged sectional view of one electrode terminal of the semiconductor package according to the first modification.
[0069]
This electrode terminal is different from the above-described embodiment in that the height of the resin protrusion 4 is higher than that of the above-described embodiment. That is, the resin protrusion 4 described in the above-described embodiment is formed to have a height of 5 to 100 μm, whereas in the first modification, it is formed to be at least 50 μm or more.
[0070]
That is, in the method of depositing the resin protrusion 4 according to the first modification, deposition is performed using the resin ejection device described in the above-described embodiment. Further, as shown in the second embodiment, a higher resin protrusion 4 is deposited and formed by repeatedly performing temporary curing after discharging the resin onto the insulating layer 3 using a resin discharging apparatus. In other words, in Example 2, the resin protrusion 4 having a height of 100 μm was formed by repeating ejection and temporary curing twice, but according to Modification Example 1, by performing this three times or more, at least The resin protrusion 4 having a thickness of 50 μm or more can be reliably formed.
[0071]
Therefore, according to the first modification, the resin protrusion 4 having a high aspect ratio of 50 μm or more can be formed, so that when mounted on a printed circuit board, the stress applied to the electrode terminals is dispersed. It can be easier. Thereby, the stress relaxation function can be further improved.
[0072]
(Modification 2)
Next, a second modification according to the embodiment of the present invention will be described with reference to FIG.
FIG. 7 is an enlarged cross-sectional view of one electrode terminal of the semiconductor device according to the second modification.
[0073]
This electrode terminal is different from the above-described embodiment in that the periphery of the upper surface of the resin protrusion 4 protrudes. In other words, the resin protrusion 4 described in the above-described embodiment has a flat upper surface. However, the resin protrusion 4 described in the first modification has the upper surface of the cylindrical resin protrusion 4. Further, a ring-shaped protrusion is continuously formed. Accordingly, when the solder bumps 8 are placed on the ring-shaped protrusions, it is possible to prevent the solder bumps 8 from rolling off the resin protrusions 4 and forming bridges with the adjacent solder bumps 8. .
[0074]
In the method of depositing the resin protrusion 4 according to the second modification, the deposition can be performed by using the resin discharge device described in the above embodiment. That is, after the resin is discharged onto the insulating layer 3 to deposit and form the cylindrical resin protrusions 4 using the resin discharge device shown in the first embodiment, the flat resin protrusions thus formed are formed. The resin is further discharged to the peripheral edge on the upper surface 4 to deposit and form the resin protrusion 4 having a ring-shaped concave portion. The method of depositing and forming the resin protrusion 4 having the concave portion is not limited to the method of the first embodiment, and may be performed in combination with the deposition method of the second embodiment. In this case, bridge formation is prevented and high aspect ratio is prevented. The resin protrusion 4 having a specific ratio can be formed.
[0075]
Therefore, according to the second modification, by forming a ring-shaped concave portion on the upper surface of the resin protrusion 4, it is possible to suppress formation of a bridge between the adjacent solder bumps 8. Further, by forming the resin protrusion 4 having a high aspect ratio by using the deposition method of the second embodiment, the stress at the connection portion between the solder bump 8 and the conductive layer 6 where the stress is concentrated can be dispersed. .
[0076]
【The invention's effect】
According to the first aspect of the present invention, the insulating layer is formed on the wafer provided with the electrode, and the electrode covered with the insulating layer is formed on the insulating layer from the electrode which is opened and exposed. In a method of manufacturing a semiconductor device in which an electrode terminal is formed in a direction perpendicular to a wafer by patterning up to a resin protrusion with a conductive material and placing solder bumps on the patterned resin protrusion, In the step of forming the resin protrusion, a liquid resin is continuously discharged from a thin hole to deposit and form a column on the insulating layer. As a result, the resin protrusion can be formed only by discharging the liquid resin at a predetermined position on the insulating layer, so that the resin coating step, the exposure step, the developing step, and the curing step, which are conventionally required, become unnecessary. As a result, the number of manufacturing steps of the resin protrusion can be reduced, and accordingly, the manufacturing time can be shortened.
[0077]
Further, since the resin coating step is not required, the problem that the resin film thickness is increased only at the peripheral portion of the wafer, which has been a problem in the related art, can be solved.
[0078]
Further, the resin protrusion according to the present invention can be formed simply by discharging a liquid resin directly from the small-diameter nozzle onto the insulating layer and depositing it in a columnar shape. Since the amount of forming dots having a height of 20 μm and a height of 20 μm is formed by stacking, it is easy to finely adjust the height of the resin protrusion to be formed. As a result, the height variation of the resin protrusion can be suppressed by this fine adjustment.
[0079]
Furthermore, since the resin application step, exposure step, and development step, which were conventionally required, are no longer necessary, in the resin application step, the amount of resin that covers the entire surface of the wafer has been required. Thus, only the amount of resin corresponding to the number of resin protrusions to be manufactured is required. In the exposure step, a resist material and a mask material are required, but according to the present invention, these are not required. Further, in the developing step, a developing solution for removing the resist after exposure is necessary. However, according to the present invention, this developing solution becomes unnecessary. As a result, the yield can be improved.
[0080]
Further, according to the present invention, since a resin protrusion having a small diameter and a high aspect ratio can be formed, when the resin protrusion is mounted on a printed wiring board having such a resin protrusion, the resin protrusion is formed. Such stress can be dispersed. In addition, since the occurrence of cracks can be suppressed, the reliability of the entire semiconductor package can be improved.
[0081]
According to the second aspect of the present invention, by using a non-photosensitive acrylic resin having a liquid resin viscosity of 400 dPa · s, resin dots having a diameter of 50 μm can be deposited from a small-diameter nozzle to a height of at least 40 μm. .
[0082]
According to the third aspect of the present invention, by using a non-photosensitive polyimide resin having a viscosity of 500 dPa · s of the liquid resin, a resin dot having a diameter of 20 μm can be deposited from a small diameter nozzle to a height of at least 100 μm. it can. Thus, a resin protrusion having a high aspect ratio can be formed, so that stress applied to the resin protrusion when mounted on a printed wiring board can be dispersed. As a result, the occurrence of cracks can be suppressed, so that the reliability of the entire semiconductor package can be improved.
[0083]
According to the fourth aspect of the present invention, the step of forming the resin protrusion is performed by repeatedly performing a deposition forming step of depositing resin dots having a diameter of 20 μm in a column shape and a firing step of firing the deposited resin. By curing the deposited resin to form a base and then depositing the resin again, the resin can be stacked higher. As a result, a resin protrusion having a higher aspect ratio can be formed as compared with the related art.
[Brief description of the drawings]
FIG. 1 is a sectional view illustrating a method of manufacturing a semiconductor package according to an embodiment of the present invention in the order of steps.
2A is a diagram showing a state immediately after the discharged non-photosensitive acrylic resin is discharged, and FIG. 2B is a diagram showing a resin protrusion 4 completed after hard baking.
FIG. 3 is a table showing a measurement result of a resin film thickness at each point on the semiconductor device according to the first embodiment.
FIG. 4 is a table showing measurement results of a resin film thickness at each point on a semiconductor device according to a comparative example.
FIG. 5 is a diagram illustrating a process of manufacturing the resin protrusion 4 according to the first embodiment.
FIG. 6 is a diagram showing a cross section of an electrode terminal of the semiconductor device according to the first modification.
FIG. 7 is a diagram showing a cross section of an electrode terminal of a semiconductor device according to a second modification.
FIG. 8 is a diagram showing a cross section of an electrode terminal in a conventional semiconductor device.
FIG. 9 is a sectional view showing a conventional method of manufacturing a semiconductor package in the order of steps.
[Explanation of symbols]
1 ... Wafer
2 ... Electrode
3. Insulating layer
4: Resin protrusion
5. Rewiring layer
6 ... conductive layer
7 ... sealing resin layer
8… Bump
101 ... wafer
102 ... electrode
103 ... insulating layer
104 ... resin protrusion
105 ... Rewiring layer
106: conductive layer
107: sealing resin layer
108 ... bump
110 ... resist mask

Claims (5)

Forming an insulating layer on the wafer provided with the electrodes, opening and exposing the electrodes covered with the insulating layer, and forming a resin protrusion on the insulating layer remote from the electrodes; Patterning a conductive material from the electrode to the resin protrusion, placing a solder bump on the patterned resin protrusion, and sealing the periphery of the resin protrusion with resin. A method for manufacturing a semiconductor device, comprising:
The method of manufacturing a semiconductor device, wherein the step of forming the resin protrusion includes discharging a liquid resin to an arbitrary position on the insulating layer, depositing the resin to a predetermined height, and heat-treating the resin. The step of forming the resin protrusion is:
A first step of depositing the liquid resin to a predetermined height and heat-treating; and, after the first step, a second step of further depositing and heat-treating the liquid resin on the deposited and heat-treated resin. 2. The method for manufacturing a semiconductor device according to claim 1, wherein 3. The method according to claim 1, wherein the liquid resin is a non-photosensitive acrylic resin having a viscosity of 400 dPa · s. 4. 3. The method according to claim 1, wherein the liquid resin is a non-photosensitive polyimide resin having a viscosity of 500 dPa · s. 4. 3. The method according to claim 1, wherein a discharge amount of the liquid resin per droplet is an amount having a spread of 20 μm and a height of 20 μm after the discharge. 4.

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