JP2004186303A - Plasma processing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To realize a process capable of improving the uniformity of the plasma density and changing the plasma density in a desired region while stabilized even when the temperature rises due to the generation of a plasma, upon effecting the plasma treatment while generating a plasma with microwaves. <P>SOLUTION: A dielectric body or a quartz glass plate 22 is arranged on the upper opening of a processing vessel 2 in an airtight configuration, and a diffusion plate 23 is arranged in the quartz glass plate 22 while the peripheral rim of the vessel is covered with the quartz glass plate 22. Protrusions 31, 32 consisting of a dielectric material are provided on the lower surface of the quartz plate 22 at a part faced to a processing space S. The microwave from a microwave supplying device 26 is propagated to the upper center of the quartz glass plate 22 by a coaxial waveguide 25. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a plasma processing apparatus using microwaves.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, there have been disclosed a number of techniques for generating plasma in a processing chamber and performing processing such as etching, ashing, and film formation on a substrate in the processing chamber. Further, an electrode is not required, and high-density plasma is obtained. A microwave plasma processing apparatus that generates plasma using microwaves having a higher frequency than RF (radio high frequency) and performs these processes has also been proposed. In such a case, conventionally, a sealing body made of quartz glass is provided on the upper part of the processing vessel, and a dielectric line made of a dielectric is further disposed above the sealing body through an air gap, and a rectangular shape provided on a side surface of the dielectric line is provided. A microwave of, for example, 2.45 GHz is supplied to the input port of, so that plasma is generated in the processing chamber (for example, see Patent Document 1).
In addition, a dielectric is disposed above the sealing body, and a metal plate having a large number of slots and holes is provided on a lower surface of the dielectric, and a microwave is supplied above the dielectric to provide a microwave. A method of generating plasma in a processing container by using microwaves leaked from holes or holes has also been proposed (for example, see Patent Document 2).
[0003]
[Patent Document 1]
JP-A-11-329789 [Patent Document 2]
International Publication WO-01-76329 [0004]
[Problems to be solved by the invention]
However, in the above-described conventional technology, since microwaves are supplied from one side of the dielectric line, the power is attenuated as the microwave propagates and travels in the dielectric line, and as a result, the power is reduced into the processing chamber. There is a possibility that the density of the generated plasma may gradually change in the radial direction. Therefore, there was a problem in the uniformity of the treatment, and it was difficult to make a corrective measure.
Further, in the method of disposing the slot antenna, the electrical characteristics of the slot antenna itself change as the temperature rises due to the generation of plasma, and the plasma density and the uniformity of the plasma may be affected.
[0005]
The present invention has been made in view of such a point, and when plasma is generated by supplying a microwave to perform plasma processing, uniformity of the plasma density is improved or the plasma density in a desired region is changed. It is intended to realize a stable process even if the temperature rises due to plasma generation.
[0006]
[Means for Solving the Problems]
In order to achieve the above object, the present invention provides a plasma processing apparatus for performing processing on a substrate in a processing chamber by using plasma generated by supplying a microwave, wherein the plasma processing apparatus includes a dielectric material that hermetically covers an upper opening of the processing chamber. A waveguide, such as a cylindrical waveguide or a coaxial waveguide, for transmitting microwaves from the microwave supply device above the dielectric; And a diffusion plate that is covered with the dielectric and diffuses the microwave propagating in the dielectric in a peripheral direction.
[0007]
According to the present invention, the microwave supplied to the upper side of the dielectric is diffused in the peripheral direction by the diffusion plate in the dielectric, and further propagates from the end of the dielectric to the lower side of the diffusion plate. Then, the plasma is emitted from the dielectric below the diffusion plate, and plasma is generated above the substrate in the processing chamber. At this time, the power starts to be released from the periphery of the dielectric in the processing vessel, so the power decreases as it goes to the center. However, when viewed as a whole, the amount of emission per unit area does not differ between regions, and as a result, it is uniform. A high density plasma is formed in the processing chamber. Moreover, since no slot antenna is provided unlike the conventional case, a stable process can be performed even if the temperature of the dielectric increases due to the generated plasma.
[0008]
In the dielectric, the upper part of the diffusion plate may not be covered with the dielectric. That is, it may be connected to the atmosphere side. Therefore, the diffusion plate may be provided on the upper surface of the dielectric and have a peripheral edge located inside the peripheral edge of the dielectric to diffuse the microwave in a peripheral direction.
[0009]
In these cases, a projection made of a dielectric material may be formed on the lower surface of the dielectric and facing a space in the processing chamber where plasma is generated. At the boundary with the convex portion, the microwave emission is larger than the others, and as a result, the plasma density near the convex portion can be increased. Therefore, by appropriately selecting the number, configuration, and arrangement of the convex portions, it is possible to generate plasma having a density distribution according to the purpose.
[0010]
The shape of the diffusion plate itself is preferably similar to that of a dielectric, and the material is suitably conductive. For example, a metal, more specifically, for example, Al or Cu is used. be able to.
[0011]
According to the present invention, a dielectric that air-tightly covers the upper opening in the processing container, a coaxial waveguide having an outer tube and an inner conductor, and an electric conductor that is electrically connected to the inner conductor, and And a conductive bump which forms a part of a circular inference provided on the lower surface of the dielectric and which is exposed on the lower surface of the dielectric. A plasma processing apparatus is provided in which a convex portion made of a dielectric material is formed on a portion of the outer periphery of a bottom surface facing a space in the processing container where plasma is generated.
In such a case, microwaves are not emitted from the bottom surface of the bump, and it is possible to generate plasma having a desired density distribution in combination with emission characteristics from the vicinity of the convex portion.
[0012]
A conductive circularly polarized antenna member having a planar shape smaller than the planar shape of the dielectric, such as a patch antenna, is provided at the center of the lower surface of the dielectric. The convex part may be formed around the circularly polarized antenna member and on the dielectric by electrically connecting to the inner conductor of the waveguide. In such a case, microwaves are not emitted below the circularly polarized antenna member, and it is possible to generate plasma having a desired density distribution in combination with the emission characteristics from the projections.
[0013]
The protrusion itself may be made of the same material as the dielectric. Also, a plurality may be provided. As the planar shape of the convex portion, for example, it is possible to propose a ring shape concentric with the dielectric or a shape having at least a part of an arc shape.
[0014]
Further, according to the present invention, there is provided a plasma processing apparatus for performing processing on a substrate in a processing container by plasma generated by supply of a microwave, comprising: a dielectric material hermetically covering an upper opening in the processing container; A coaxial waveguide having an outer tube and an inner conductor for transmitting microwaves from the microwave supply device above the dielectric, electrically conductive to the inner conductor, and provided in the dielectric; And a conductive bump constituting a part of the circular guess, wherein the bottom surface of the bump is exposed to the lower surface of the dielectric, and the lower surface of the dielectric extends from the periphery to the center. There is provided a plasma processing apparatus characterized by having a tapered shape in which the thickness of a dielectric gradually increases as it goes.
[0015]
In this way, the lower surface of the dielectric is tapered so that the thickness of the dielectric gradually increases from the peripheral edge toward the center, thereby controlling the microwave emission from the lower surface of the dielectric and allowing the periphery to be controlled. The part can be released stronger and gradually toward the center. This makes it possible to increase the plasma density on the peripheral side of the substrate and decrease the density on the central side.
[0016]
If the taper is reversed and the lower surface of the dielectric is tapered so that the thickness of the dielectric gradually decreases from the peripheral edge toward the center, the peripheral portion is weaker, and conversely the central portion is reduced. , The plasma density on the peripheral side of the substrate becomes thinner and the density on the central side becomes higher.
Similarly, a projection made of a dielectric material may be formed on the lower surface of the dielectric and on the portion of the bottom surface of the bump facing the inside of the processing container.
[0017]
Further, according to the present invention, there is provided a plasma processing apparatus for performing processing on a substrate in a processing container by plasma generated by supply of a microwave, comprising: a dielectric material hermetically covering an upper opening in the processing container; A waveguide for propagating microwaves from the microwave supply device above the dielectric, and the dielectric made of a material having a different dielectric constant, for example, a material having a larger dielectric constant than the dielectric; In addition, a plasma processing apparatus is provided having a dielectric antenna member penetrating the dielectric and having a lower surface protruding below the dielectric.
[0018]
According to the plasma processing apparatus having such a configuration, microwaves can be emitted to the processing space in the processing container through the protruding portion of the dielectric antenna member to generate plasma. Therefore, by appropriately selecting the size, arrangement, and number thereof, it is possible to improve the uniformity of the plasma density and to generate plasma having a desired density distribution. Moreover, even if the temperature rises due to the plasma, the characteristics do not change. Note that the dielectric that airtightly covers the upper opening may be made of a conductive material.
[0019]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, preferred embodiments of the present invention will be described. FIG. 1 shows a longitudinal section of a plasma processing apparatus 1 according to the present embodiment. The plasma processing apparatus 1 includes a cylindrical processing vessel 2 having, for example, aluminum and an open top and a bottom. I have. The processing container 2 is grounded. A susceptor 3 for mounting, for example, a semiconductor wafer (hereinafter, referred to as a wafer) W as a substrate is provided at the bottom of the processing container 2. The susceptor 3 is made of, for example, aluminum, and a high frequency for bias is supplied from an AC power supply 4 provided outside the processing container 2.
[0020]
An exhaust pipe 12 for exhausting the atmosphere in the processing container 2 by an exhaust device 11 such as a vacuum pump is provided at the bottom of the processing container 2. A supply pipe 14 for supplying a processing gas from a processing gas supply source 13 is provided on a side wall of the processing container 2.
[0021]
A quartz glass plate 22 as a dielectric of the present invention is provided at an upper opening of the processing container 2 via a sealing material 21 such as an O-ring for ensuring airtightness. Thereby, a processing space S is formed in the processing container 2. The quartz glass plate 22 has a circular planar shape, and a disc-shaped diffusion plate 23 made of a metal such as Al or Cu is provided inside the quartz glass plate 22. The diffusion plate 23 is disposed so that the upper and lower surfaces and the peripheral edge thereof are all covered with quartz glass as a dielectric, and faces the susceptor 3. Instead of the quartz glass plate 22, another dielectric material, for example, a plate made of ceramics may be used.
[0022]
On the upper surface side of the diffusion plate 23 in the quartz glass plate 22, a bump 24 having a shape that forms a part of a conical shape made of a conductive material, for example, a metal is arranged. The bump 24 is electrically connected to the inner conductor 25a of the coaxial waveguide 25 formed by the inner conductor 25a and the outer tube 25b. The coaxial waveguide 25 transmits microwaves of, for example, 2.45 GHz generated by the microwave supply device 26 to the upper central portion of the quartz glass plate 22. The connection between the waveguide 25 and the quartz glass plate 22 is covered with a waveguide cover 27.
[0023]
Convex portions 31 and 32 are formed on the bottom surface of the quartz glass plate 22 and on the portion facing the processing space S in the processing chamber 2. As shown in FIG. 2, the convex portions 31 and 32 have a concentric annular shape centered on the center P of the circular quartz glass plate 22, and are made of quartz glass.
[0024]
Instead of the annular projections 31 and 32, projections 33a to 33d and 34a to 34d having an arc shape as shown in FIG. 3 may be used. In the example of FIG. 3, these arc-shaped convex portions are arc-shaped convex portions 33 a to 33 d and 34 a to 34 d which are equally divided into four through the gaps d 1 and d 2, respectively. The number and the size of the gaps d1 and d2 can be arbitrarily selected.
[0025]
The plasma processing apparatus 1 according to the present embodiment has the above-described configuration. When performing plasma processing, the wafer W is placed on the susceptor 3 in the processing chamber 2 and a predetermined amount is supplied from the supply pipe 14. By exhausting the processing gas from the exhaust pipe 12 while supplying the processing gas into the processing container 22, the processing space S is set to a predetermined pressure. When a bias high frequency is applied to the wafer W by the AC power supply 4 and a microwave is generated by the microwave supply device 26 and propagated to the upper center of the quartz glass plate 22 by the coaxial waveguide 25, the processing space A plasma is generated in S, and a predetermined plasma process can be performed on the wafer W.
[0026]
More specifically, as shown in FIG. 4, the microwave propagated to the upper center of the quartz glass plate 22 is evenly propagated in the radial direction by the bump 24, becomes a traveling wave, and is spread to the peripheral portion by the diffusion plate 23. And proceed. Then, the gas enters the lower side of the diffusion plate 23 from outside the periphery of the diffusion plate 23 and further proceeds, is released from the lower surface side of the quartz glass plate 22, and turns the processing gas into plasma in the processing space above the wafer W.
[0027]
At this time, the traveling wave traveling to the lower side of the diffusion plate 23 is gradually released from the lower surface side when traveling from the periphery of the quartz glass plate 22 toward the center, and the energy gradually decreases as the traveling wave proceeds. Decays. Therefore, the energy of the emitted electromagnetic field is larger at the peripheral portion, but the emission area is smaller as it is closer to the center, so that the entire lower surface of the quartz glass plate 22 emits substantially uniform energy per unit area, resulting in the generated energy. The plasma density is substantially uniform in the processing space S as shown by the plasma density level curve D1 in FIG. In the figure, C indicates a center portion of the wafer W, and E indicates an edge portion.
[0028]
Moreover, in the present embodiment, unlike the conventional slot antenna, there is no configuration in which the leakage is caused from the slots and holes formed in the metal plate. Even if the temperature rises, the electrical characteristics do not change and a stable process can be performed.
[0029]
By the way, depending on the characteristics of the apparatus, the resulting processing on the wafer W may not be performed uniformly. At this time, for example, it is necessary to increase the plasma density at the peripheral portion and the central portion of the wafer W, or to decrease the plasma density. According to the present embodiment, since the projections 31 and 32 are provided on the lower surface of the quartz glass plate 22, the emission from the vicinity of the projections 31 and 32 is more active than other portions. Therefore, as shown by the height curve D2 in FIG. 4, it is possible to make the plasma density in the vicinity of these convex portions 31 and 32 higher than that in other regions. This enables correction and control of the plasma density in the processing space.
[0030]
In the plasma processing apparatus 1 shown in FIG. 1, the coaxial waveguide 25 is used as the waveguide, but the present invention is not limited to this, and various waveguides can be used. In addition, although the quartz glass plate 22 is used as a dielectric material for hermetically covering the upper opening of the processing container 2, various dielectric materials having microwave permeability such as ceramics can be used.
[0031]
In the above embodiment, the upper and lower surfaces and the peripheral edge of the diffusion plate 23 are all covered with quartz glass as a dielectric, so that the diffusion plate 23 is sealed in the quartz glass plate 22. However, instead of this, as in the second embodiment shown in FIG. 5, the diffusion plate 23 is provided on the upper surface of the quartz glass plate 22, and the upper surface of the diffusion plate 23 is located inside the waveguide cover 27, ie, It may be open to the atmosphere (the same applies to the following embodiments after the second embodiment).
[0032]
That is, in the example shown in FIG. 5, the diffusion plate 23 is provided on the upper surface of the quartz glass plate 22, and the periphery of the diffusion plate 23 has a size and a shape located inside the periphery of the quartz glass plate 22. are doing. Also in this example, the microwave propagated to the upper center of the quartz glass plate 22 is evenly propagated in the radial direction by the bumps 24, becomes a traveling wave, and travels to the periphery by the diffusion plate 23. Then, from the upper part of the periphery of the diffusion plate 23, it enters the lower side of the diffusion plate 23, further proceeds, is released from the lower surface side of the quartz glass plate 22, and turns the processing gas into plasma in the processing space above the wafer W. It is possible.
[0033]
Still another embodiment will be described. The third embodiment shown in FIG. 6 has a structure in which the diffusion plate 23 is not provided in the quartz glass plate 22 as a dielectric, and the bottom surface of the bump 24 is exposed to the bottom surface side of the quartz glass plate 22. ing. The other configuration including the processing container 2 is the same as that of the plasma processing apparatus 1 according to the first embodiment shown in FIG.
According to the third embodiment, the bottom surface of the bump 24 electrically connected to the inner conductor 25a of the coaxial waveguide 25 is located at the center of the bottom surface of the quartz glass plate 22. Microwave emission does not occur at the center of the bottom surface of 22, and conversely, as described above, emission from the vicinity of the convex portions 31 and 32 becomes more active than in other regions. As a result, as shown in the plasma density elevation curve D3 in FIG. 6, it is possible to obtain plasma characteristics with a lower density at the center than the plasma density elevation curve D2 in FIG. The exposed bottom surface of the bump 24 may be covered with, for example, silicon or the like in order to protect the exposed bottom surface from etching or the like. Alternatively, the bumps 24 may be made of metal silicon.
[0035]
Instead of providing the convex portions 31 and 32 in the third embodiment, the shape of the lower surface of the quartz glass plate 22 may be tapered to control the energy of microwave emission from the quartz glass plate 22.
[0036]
In the fourth embodiment shown in FIG. 7, the lower surface of the quartz glass plate 22 as a dielectric is tapered so that the thickness of the quartz glass plate 22 gradually increases from the periphery toward the center. . According to this example of the configuration, it is possible to control the emission energy of the microwave from the lower surface of the quartz glass plate 22 to emit the microwave more strongly toward the periphery and gradually weaker toward the center. This makes it possible to reduce the plasma density on the peripheral side of the substrate and increase the density on the central side, as shown by the plasma density level curve D4 in FIG.
[0037]
Also, as in the fifth embodiment shown in FIG. 8, the taper is reversed, and the lower surface of the quartz glass plate 22 is gradually reduced in thickness from the periphery toward the center. With a tapered shape, as shown in the plasma density level curve D5 in FIG. 8, the peripheral portion is weaker, and conversely, is gradually increased toward the central portion to increase the plasma density on the peripheral portion side of the substrate. It is possible to make it thinner and to increase the density on the center side.
[0038]
Next, a sixth embodiment will be described. The example shown in FIG. 9 has a structure in which a disc-shaped circularly polarized antenna member 41 having conductivity is further attached to the bottom surface of the bump 24 shown in FIG. According to the third embodiment, as shown in the plasma density height curve D6 in FIG. 9, the central region having a lower density than the plasma density height curve D3 in FIG. Broadened plasma density characteristics can be obtained. As the circularly polarized antenna member, a rectangular or elliptical patch antenna or a two-point feeding type circular patch antenna can be used.
[0039]
Next, a seventh embodiment will be described. In the example shown in FIG. 10, four cylindrical dielectric antenna members 51 penetrating the quartz glass plate 22 are arranged at equal intervals on the same circumference, and the lower part of the dielectric antenna member 51 is placed on the quartz glass plate. 22 has a configuration projecting below the lower surface. The dielectric antenna member 51 is made of a material having a higher dielectric constant than the quartz glass plate 22. In such a case, on the contrary, instead of the quartz glass plate 22, a conductive material such as silicon or metal may be used. As the material of the dielectric antenna member 51, a material having a different dielectric constant from the quartz glass plate 22 may be used.
[0040]
Further, the upper surfaces of the four dielectric antenna members 51 protrude above the upper surface of the quartz glass plate 22, and a branch portion 52a of the branch waveguide 52 is connected to the end surface. As shown in FIG. 11, the branch waveguide 52 has four branch portions 52 a in a cross shape, and the main portion 52 b is connected to the waveguide 25. The inner conductor 25a of the waveguide 25 is branched corresponding to the branching portion 52a in the power coupling portion 53 to form a branching conductor 52c, and the end of each branching conductor 52c is placed in each dielectric antenna member 51. Has entered.
[0041]
According to the fourth embodiment, the microwaves propagated from the coaxial waveguide 25 to the respective dielectric antenna members 51 via the branch waveguide 52 are emitted from these dielectric antenna members 51. Therefore, for example, as shown by a plasma density level curve D7 in FIG. 10, a plasma density characteristic in which the plasma density is increased in the vicinity of the dielectric antenna member 5 can be obtained. Moreover, even if the temperature rises due to the generation of plasma, the electrical characteristics of the dielectric antenna member 51 do not change, so that a stable process can be performed.
[0042]
In addition, as the material of the dielectric antenna member 51, a material such as quartz glass, glass, or ceramics can be used, and the shape and the number of arrangement can be arbitrarily selected according to desired plasma density characteristics. Instead of the coaxial waveguide 25, a cylindrical waveguide and a corresponding branch waveguide may be used.
[0043]
【The invention's effect】
ADVANTAGE OF THE INVENTION According to this invention, when generating plasma by supplying a microwave and performing plasma processing, the uniformity of plasma density is improved compared with the past, and it is possible to generate plasma having a desired density distribution. . In addition, even if the temperature rises due to the plasma, the characteristics do not change compared to the conventional case, and a stable process can be realized.
[Brief description of the drawings]
FIG. 1 is an explanatory cross-sectional view of a plasma processing apparatus according to a first embodiment of the present invention.
FIG. 2 is a bottom view of a quartz glass plate used in the plasma processing apparatus of FIG.
FIG. 3 is a bottom view of a quartz glass plate having an arc-shaped convex portion.
FIG. 4 is an explanatory diagram showing plasma density characteristics by the plasma processing apparatus of FIG. 1;
FIG. 5 is an explanatory diagram showing a configuration of a main part and a plasma density characteristic of a plasma processing apparatus according to a second embodiment of the present invention.
FIG. 6 is an explanatory diagram showing a configuration of a main part and a plasma density characteristic of a plasma processing apparatus according to a third embodiment of the present invention.
FIG. 7 is an explanatory diagram showing a configuration of a main part and a plasma density characteristic of a plasma processing apparatus according to a fourth embodiment of the present invention.
FIG. 8 is an explanatory diagram showing a configuration of a main part and a plasma density characteristic of a plasma processing apparatus according to a fifth embodiment of the present invention.
FIG. 9 is an explanatory diagram showing a configuration of a main part and a plasma density characteristic of a plasma processing apparatus according to a sixth embodiment of the present invention.
FIG. 10 is an explanatory diagram showing a configuration of a main part and a plasma density characteristic of a plasma processing apparatus according to a seventh embodiment of the present invention.
11 is a sectional view taken along the line AA in FIG. 11;
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Plasma processing apparatus 2 Processing container 3 Susceptor 22 Quartz glass plate 23 Diffusion plate 24 Bump 25 Coaxial waveguide 25a Inner conductor 26 Microwave supply device S Processing space W Wafer

Claims (14)

A plasma processing apparatus for performing processing on a substrate in a processing chamber by using plasma generated by supplying a microwave,
A dielectric material for hermetically covering the upper opening of the processing vessel;
A waveguide for propagating microwaves from the microwave supply device above the dielectric;
A diffusion plate that is provided in the dielectric and whose peripheral edge is covered with the dielectric, and that diffuses microwaves propagating in the dielectric in a peripheral direction;
A plasma processing apparatus, comprising: A plasma processing apparatus for performing processing on a substrate in a processing chamber by using plasma generated by supplying a microwave,
A dielectric material for hermetically covering the upper opening of the processing vessel;
A waveguide for propagating microwaves from the microwave supply device above the dielectric;
A diffusion plate provided on an upper surface of the dielectric and having a peripheral edge located inside the peripheral edge of the dielectric, and diffusing the microwave in a peripheral direction;
A plasma processing apparatus, comprising: 2. A projection formed of a dielectric material is formed on a lower surface of the dielectric and facing a space where plasma is generated in the processing chamber. Or the plasma processing apparatus according to 2. A plasma processing apparatus for performing processing on a substrate in a processing chamber by using plasma generated by supplying a microwave,
A dielectric material that hermetically covers the upper opening in the processing container;
A coaxial waveguide having an outer tube and an inner conductor for transmitting microwaves from the microwave supply device above the dielectric;
A conductive bump electrically connected to the inner conductor and forming a part of a circular shape provided in the dielectric,
The bottom surface of the bump is exposed on the lower surface of the dielectric,
A projection made of a dielectric material is formed on a portion of the lower surface of the dielectric and facing the space where plasma is generated in the processing container on the outer periphery of the bottom surface of the bump. A plasma processing apparatus. A plasma processing apparatus for performing processing on a substrate in a processing chamber by using plasma generated by supplying a microwave,
A dielectric material that hermetically covers the upper opening in the processing container;
A coaxial waveguide having an outer tube and an inner conductor for transmitting microwaves from the microwave supply device above the dielectric;
A circularly polarized antenna member that is provided at the center of the lower surface of the dielectric and has a planar shape smaller than the planar shape of the dielectric, and is electrically conductive with the inner conductor;
A projection made of a dielectric material is formed on a lower surface of the dielectric and on a portion of the outer periphery of the circularly polarized antenna member facing a space where plasma is generated in the processing container. A plasma processing apparatus, characterized in that: 6. The plasma processing apparatus according to claim 3, wherein the protrusion is made of the same material as the dielectric. 6. The plasma processing apparatus according to claim 3, wherein a plurality of the protrusions are provided. 8. The plasma processing apparatus according to claim 3, wherein a plane configuration of the projection is an annular shape concentric with the dielectric. 8. The plasma processing apparatus according to claim 3, wherein at least a part of the planar shape of the protrusion is an arc shape. A plasma processing apparatus for performing processing on a substrate in a processing chamber by using plasma generated by supplying a microwave,
A dielectric material that hermetically covers the upper opening in the processing container;
A coaxial waveguide having an outer tube and an inner conductor for transmitting microwaves from the microwave supply device above the dielectric;
A conductive bump electrically connected to the inner conductor and forming a part of a circular shape provided in the dielectric,
The bottom surface of the bump is exposed on the lower surface of the dielectric,
The plasma processing apparatus according to claim 1, wherein the lower surface of the dielectric has a tapered shape in which the thickness of the dielectric gradually increases from the periphery to the center. A plasma processing apparatus for performing processing on a substrate in a processing chamber by using plasma generated by supplying a microwave,
A dielectric material that hermetically covers the upper opening in the processing container;
A coaxial waveguide having an outer tube and an inner conductor for transmitting microwaves from the microwave supply device above the dielectric;
A conductive bump electrically connected to the inner conductor and forming a part of a circular shape provided in the dielectric,
The bottom surface of the bump is exposed on the lower surface of the dielectric,
The plasma processing apparatus according to claim 1, wherein a lower surface of the dielectric has a tapered shape in which a thickness of the dielectric gradually decreases from a peripheral edge toward a center. A plasma processing apparatus for performing processing on a substrate in a processing chamber by using plasma generated by supplying a microwave,
A dielectric material that hermetically covers the upper opening in the processing container;
A waveguide for propagating microwaves from the microwave supply device above the dielectric;
A plasma antenna comprising a dielectric antenna member made of a material having a different dielectric constant from the dielectric, and penetrating through the dielectric, with a lower surface protruding below the dielectric; Processing equipment. 13. The plasma processing apparatus according to claim 12, wherein a dielectric constant of the dielectric antenna member is higher than the dielectric. 14. The plasma processing apparatus according to claim 12, wherein the dielectric material hermetically covering the upper opening is made of a conductive material.

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