JP2004179362A - Wiring board and electronic device using the same - Google Patents

Wiring board and electronic device using the same Download PDF

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Publication number
JP2004179362A
JP2004179362A JP2002343337A JP2002343337A JP2004179362A JP 2004179362 A JP2004179362 A JP 2004179362A JP 2002343337 A JP2002343337 A JP 2002343337A JP 2002343337 A JP2002343337 A JP 2002343337A JP 2004179362 A JP2004179362 A JP 2004179362A
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Prior art keywords
conductor
wiring
wiring board
tin
insulating layer
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JP2002343337A
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Japanese (ja)
Inventor
Takahiro Matsuoka
孝浩 松岡
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Kyocera Corp
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Kyocera Corp
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Priority to JP2002343337A priority Critical patent/JP2004179362A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H01L2924/15172—Fan-out arrangement of the internal vias
    • H01L2924/15174—Fan-out arrangement of the internal vias in different layers of the multilayer substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wiring board that is superior in connection reliability between a wiring conductor and a penetrating conductor even if thermal load is repeatedly applied for a long time. <P>SOLUTION: The wiring board is formed by stacking plurally and alternately an insulation layer 1 that a heat resistance fiber base material is impregnated with a thermosetting resin, and a wiring conductor 2 made of copper foil and connecting electrically the wiring conductors 2 with each other that are located vertically with the insulation layer 1 in between, by means of a penetrating conductor 4 that a through hole 3 formed in the insulation layer 1 is filled with a metallic powder 5 made mainly of tin and a conductive material containing a thermosetting resin. The wiring conductor 2 is provided with a diffusion layer 6 containing Cu<SB>3</SB>Sn wherein tin is formed by diffusion on the surface connected with the penetrating conductor 4. <P>COPYRIGHT: (C)2004,JPO

Description

【０００１】
【発明の属する技術分野】
本発明は、絶縁層および配線導体が複数交互に積層され、上下の配線導体間を貫通導体により電気的に接続して成り、配線導体と貫通導体との接続信頼性に優れた配線基板およびこれを用いた電子装置に関する。
【０００２】
【従来の技術】
従来、半導体素子や抵抗器等の電子部品を搭載するために用いられる配線基板として、ガラス基材および熱硬化性樹脂から成る絶縁層と銅箔等から成る配線導体とを交互に複数積層して成るプリント基板が知られている。このようなプリント基板は、表面に配線導体が形成された絶縁層を複数枚、積層圧着して多層化することにより製作されている。しかしながら、このプリント基板は、絶縁層表面の配線導体が形成された部分とその他の部分との段差により表面が凹凸状態となることから、絶縁層に若干の可塑性を持たせた絶縁シートを用い、絶縁シートを積層する際に絶縁シートの配線導体に当接する部位を配線導体の厚みに対応して塑性変形させることにより配線導体を絶縁シート中に埋入させ積層・硬化することにより、プリント基板表面に凹凸が形成されないようにしている。なお、プリント基板の上下に位置する配線導体は、絶縁層に形成された貫通導体を介して電気的に接続されている。
【０００３】
このようなプリント基板は、耐熱性繊維基材に熱硬化性樹脂前駆体を含浸させた絶縁シートの配線基板領域にレーザで貫通孔を形成した後、この貫通孔内に銀等の金属粉末および熱硬化性樹脂前駆体から成る導体ペーストをスクリーン印刷（圧入）で埋め込み貫通導体を形成し、他方、耐熱性樹脂から成る転写シートの表面に銅箔を被着し、所定のパターンにエッチングして絶縁シートの各配線基板領域に対応する位置に配線導体を形成し、しかる後、貫通導体が形成された絶縁シートに配線導体が形成された転写シートを圧接して配線導体を絶縁シートに転写埋入するとともに貫通導体と電気的に接続させ、さらに、絶縁シートから転写シートを剥離した後、配線導体が埋入された絶縁シートを複数積層して１８０〜２００℃の温度で数分〜数時間、熱プレスを用いて熱硬化性樹脂前駆体を硬化一体化させることにより製作される。
【０００４】
なお、導体ペーストの充填によって貫通導体を形成する方法は、従来のめっき法により貫通導体を形成する方法に対して、貫通導体を任意の箇所に設けることができるために、特に高密度配線化に適した方法として注目されている。
【０００５】
【特許文献１】
特開２００１−４４５９０号公報
【０００６】
【発明が解決しようとする課題】
しかしながら、導体ペーストの充填によって貫通導体を形成した従来の配線基板は、貫通導体の金属粉末と配線導体の銅箔との接続が異種金属間の接続であることおよび単に接触することにより接続していることから、配線基板に長期の熱負荷を繰返して印加した場合、両者間の導通抵抗が高くなってしまい貫通導体と配線導体との接続部で断線してしまうという問題点を有していた。
【０００７】
本発明は、かかる従来技術の問題点に鑑み完成されたものであり、その目的は、長期の熱負荷を繰返して印加しても、配線導体と貫通導体との接続信頼性に優れた配線基板を提供するものである。
【０００８】
【課題を解決するための手段】
本発明の配線基板は、耐熱性繊維基材に熱硬化性樹脂を含浸させて成る絶縁層と銅箔から成る配線導体とを交互に複数層積層するとともに、前記絶縁層を挟んで上下に位置する前記配線導体同士を、前記絶縁層に設けた貫通孔を錫を主成分とする金属粉末および熱硬化性樹脂を含む導電性材料で充填して成る貫通導体により電気的に接続して成る配線基板において、前記配線導体は前記貫通導体と接続された表面に前記錫が拡散して形成されたＣｕ３Ｓｎを含有する拡散層が形成されていることを特徴とするものである。
【０００９】
本発明の配線基板によれば、貫通導体と接続する銅箔の表面に錫が拡散して形成されたＣｕ３Ｓｎを含有する拡散層が形成されていることから、貫通導体の金属粉末と配線導体の銅箔とが異種金属でありながら、導電性の高いＣｕ３Ｓｎから成る銅錫化合物を含有した拡散層を介して接続されるので、両者の接合が強固なものとなり、その結果、配線基板に長期の熱負荷を繰返し印加した場合においても、両者間の導通抵抗が高くなることはなく、配線導体と貫通導体との間で断線することのない接続信頼性に優れた配線基板とすることができる。
【００１０】
また、本発明の電子装置は、上記の配線基板の表面に電子部品を実装するとともに、この電子部品の電極を配線導体または貫通導体に電気的に接続して成ることを特徴とするものである。
【００１１】
本発明の電子装置によれば、上記の配線基板の表面に電子部品を実装するとともに、この電子部品の電極を配線導体または貫通導体に電気的に接続したことから、銅箔に形成された導電性の高いＣｕ３Ｓｎから成る銅錫化合物を含有した拡散層を介して配線導体と貫通導体とが強固に接続され、その結果、電子装置に長期の熱負荷を繰返し印加しても配線導体と貫通導体との導通抵抗が高くなることはなく、配線導体と貫通導体との間で断線することのない接続信頼性に優れた電子装置とすることができる。
【００１２】
【発明の実施の形態】
次に、本発明の配線基板および電子装置を添付の図面に基づいて詳細に説明する。図１は、本発明の配線基板に半導体素子等の電子部品を搭載した電子装置の実施の形態の一例を示す断面図であり、図２はその要部拡大断面図である。これらの図において、１は絶縁層、２は配線導体、３は貫通孔、４は貫通導体、５は金属粉末、６は拡散層、７は電子部品である。なお、図１の例では、絶縁層１を４層積層して配線基板を製作した場合の例を示している。
【００１３】
本発明の配線基板は、耐熱性繊維基材に熱硬化性樹脂を含浸させて成る絶縁層１および銅箔から成る配線導体２を交互に複数層積層するとともに、絶縁層１を挟んで上下に位置する配線導体２同士を絶縁層１に設けた貫通孔３内に充填させた錫を主成分とする金属粉末５および熱硬化性樹脂を含む導電性材料から成る貫通導体４で接続することにより形成されている。また、絶縁層１の一方の最外層表面に形成された配線導体２の一部は、電子部品７の各電極に導体バンプ１１を介して接合される電子部品７接続用の実装用電極を形成し、さらに絶縁層１の他方の最外層表面に形成された配線導体２の一部は、外部電気回路基板（図示せず）の各電極に導体バンプ１１を介して接続される外部接続用の実装用電極を形成している。そして、最外層の絶縁層１および実装用電極には、必要に応じて実装用電極の中央部を露出させる開口を有する耐半田樹脂層１２が被着されている。
【００１４】
さらに、本発明の電子装置は、上記の配線基板の表面に電子部品７を実装するとともに、電子部品７の電極を配線導体２または貫通導体４に電気的に接続することにより形成されている。
【００１５】
絶縁層１は、その厚みが５０〜１５０μｍであり、配線導体２を支持するとともに上下に位置する配線導体２間の絶縁を保持する機能を有し、ガラスクロスやアラミド繊維・全芳香族エステル繊維等の耐熱性繊維基材にエポキシ樹脂やビスマレイミドトリアジン樹脂・アリル変性ポリフェニレンエーテル樹脂等の熱硬化性樹脂を含浸させて成る。なお、絶縁層１の厚みが５０μｍ未満であると配線基板の剛性が低下して、配線基板が撓みやすくなる傾向があり、１５０μｍを超えると絶縁層１の厚みが不要に厚いものとなり配線基板の軽量化が困難となる傾向がある。従って、絶縁層１は、その厚みを５０〜１５０μｍとすることが好ましい。
【００１６】
また、各絶縁層１の表面には配線導体２が埋入されている。配線導体２は、銅の金属箔から成り、配線基板に搭載される半導体素子等の電子部品７の各電極を外部電気回路基板に電気的に接続する導電路の一部としての機能を有し、幅が２０〜２００μｍ、厚みが５〜５０μｍである。配線導体２の幅が２０μｍ未満となると配線導体２の変形や断線が発生しやすくなる傾向があり、２００μｍを超えると高密度配線が形成できなくなる傾向がある。また、配線導体２の厚みが５μｍ未満になると配線導体２の強度が低下し変形や断線が発生しやすくなる傾向があり、５０μｍを超えると絶縁層１への埋入が困難となる傾向がある。従って、配線導体２は、その幅を２０〜２００μｍ、厚みを５〜５０μｍとすることが好ましい。
【００１７】
なお、配線導体２の表面は、後述する貫通導体４との密着性・接合性を高めるために、その表面に平均表面粗さ１〜３μｍの凹凸を形成しておくことが好ましい。このような凹凸は、蟻酸および塩酸処理することにより形成される。なお、表面粗さが１μｍ未満であると絶縁層１との密着強度が低下し配線導体２が絶縁層１から剥がれ易くなってしまう傾向があり、３μｍを超えると配線導体２と金属粉末５との接合点が少なくなるため、錫が充分に拡散せず拡散層６が良好に形成できなくなる傾向がある。従って、平均表面粗さは１〜３μｍの範囲が好ましい。
【００１８】
さらに、各絶縁層１には、その上面から下面にかけて貫通導体４が複数個配設されている。これらの貫通導体４は、絶縁層１の上下に位置する配線導体２間を電気的に接続する機能を有し、その直径が３０〜２００μｍであり、絶縁層１に設けた貫通孔３に錫を主成分とする金属粉末とトリアジン系熱硬化性樹脂等とから成るペーストを埋め込み熱硬化することにより形成されている。なお、貫通導体４の直径が３０μｍ未満になるとその加工が困難となる傾向があり、２００μｍを超えると高密度配線が形成できなくなる傾向がある。従って、貫通導体４は、その直径を３０〜２００μｍとすることが好ましい。
【００１９】
また、ペーストの金属粉末５の含有量は８０〜９５重量％が好ましい。金属粉末５の含有量が８０重量％より少ないと、トリアジン系熱硬化性樹脂により金属粉末５同士の接続が妨げられ導通抵抗が上昇してしまう傾向があり、９５重量％を超えるとペーストの粘度が上がり過ぎて良好に埋め込みできない傾向がある。従って、ペーストの金属粉末５の含有量は８０〜９５重量％が好ましい。
【００２０】
このような金属粉末５は、錫や錫・ビスマス・銅等の合金から成り、錫を７０〜９０重量％含有している。錫の含有量が７０重量％より少ないと、後述するように配線導体２を形成する銅箔に金属粉末５中の錫が拡散して形成されるＣｕ３Ｓｎを含有する拡散層６を良好に形成できなくなる傾向があり、９０重量％を超えると銅箔への錫の拡散量が増加し、錫の含有量の多い拡散層６は銅箔よりも導通抵抗が大きいので、配線導体２と貫通導体４との導通抵抗が大きなものとなってしまう傾向がある。
【００２１】
また、金属粉末５の平均粒径は５〜１０μｍが好ましい。平均粒径が５μｍより小さいとペーストの粘度が上がり過ぎて良好に埋め込みできなくなる傾向があり、１０μｍより大きいと金属粉末５を高充填できず金属粉末５間の接触点が少なくなり、導通抵抗が高くなってしまう傾向がある。従って、金属粉末５の平均粒径は５〜１０μｍが好ましい。
【００２２】
また、熱硬化性樹脂は、トリアリルシアヌレートやトリアリルイソシアヌレート・トリスエポキシプロピルイソシアヌレート・トリス（２−ヒドロキシエチル）イソシアヌレート等のトリアジン系熱硬化性樹脂が好ましい。
【００２３】
そして本発明の配線基板においては、配線導体２は、貫通導体４と接続する銅箔の表面に錫が拡散して形成されたＣｕ３Ｓｎを含有する拡散層が形成されており、このことが重要である。
本発明の配線基板によれば、貫通導体４と接続する銅箔の表面に錫が拡散して形成されたＣｕ３Ｓｎを含有する拡散層が形成されていることから、貫通導体４の金属粉末５と配線導体２の銅箔とが異種金属でありながら、導電性の高いＣｕ３Ｓｎを含有した拡散層６を介して接続されるので、両者の接合が強固なものとなり、その結果、配線基板に長期の熱負荷を繰返し印加した場合においても、両者間の導通抵抗が高くなることはなく、配線導体と貫通導体との間で断線することのない接続信頼性に優れた配線基板とすることができる。さらに、拡散層６のＣｕ３Ｓｎから成る銅錫化合物は、導電性が高いため、貫通導体４と配線導体２との接合部を低抵抗化できる。
【００２４】
なお、このようなＣｕ３Ｓｎを含有した拡散層６は、銅から成る配線導体２と錫を主成分とする金属粉末５および熱硬化性樹脂を含む導電性材料で充填して成る貫通導体４とを接合後、錫の融点（約２３２℃）以上の温度で数分〜数時間熱処理を施すことにより形成され、形成される銅錫化合物としてはＣｕ３ＳｎおよびＣｕ６Ｓｎ５がある。Ｃｕ３Ｓｎは銅と錫とが３：１の比率からなる結晶性化合物であり、拡散層６がＣｕ３Ｓｎを含有することにより、貫通導体４の金属粉末５と配線導体２の銅箔との接合が強固なものとなり、その接合部を低抵抗化できる。なお、拡散層６には、Ｃｕ６Ｓｎ５がＣｕ３Ｓｎとともに存在しても良いが、その場合、Ｃｕ３Ｓｎの比率が５％以上であることが好ましい。また、充分な量のＣｕ３Ｓｎの拡散層６を形成するためには、配線基板を錫の融点（約２３２℃）以上の温度で１時間以上熱処理することが好ましい。
【００２５】
このような拡散層６のＣｕ３ＳｎやＣｕ６Ｓｎ５・Ｃｕ等の成分比率は、配線基板の断面の走査型電子顕微鏡写真（ＳＥＭ写真）によって定量化できる。このＳＥＭ写真によれば、Ｃｕ３ＳｎやＣｕ６Ｓｎ５・Ｃｕはそれぞれの色の濃度によって判別でき、色の濃さはＣｕ３Ｓｎが一番濃く、次にＣｕ６Ｓｎ５、次にＣｕの順序で黒くなっている。
【００２６】
なお、錫が拡散して形成された拡散層６の厚みが１μｍより薄いと、導通抵抗が高くなってしまう傾向があり、５μｍより厚いと、錫−銅合金の抵抗が銅箔の抵抗より高いため導通抵抗が高くなってしまう傾向がある。従って、貫通導体４と接続した配線導体２表面の錫が拡散して形成された拡散層６の厚みは、１〜５μｍであることが好ましい。
【００２７】
また、貫通導体４と接続した配線導体２表面の拡散層６の広がりは、貫通導体４の開口に対して、１〜３０％であることが好ましい。拡散層６の広がりが１％未満の場合、金属粉末５と配線導体２との結合が弱いものとなり、配線基板に長期の熱負荷を繰返し印加した場合において両者間の導通抵抗が高くなる傾向があり、３０％を超えると、後述する金属粉末５を高温で溶融する際に、熱硬化性樹脂が熱劣化を起こし絶縁層１の絶縁性が低下してしまう傾向がある。従って、貫通導体４と接続した配線導体２表面の拡散層６の広がりは、貫通導体４の開口に対して、１〜３０％であることが好ましい。
【００２８】
かくして、本発明の配線基板によれば、貫通導体４と接続する銅箔の表面に錫が拡散して形成されたＣｕ３Ｓｎから成る銅錫化合物を含有する拡散層が形成されていることから、貫通導体４の金属粉末５と配線導体２の銅箔とが異種金属でありながら、導電性の高いＣｕ３Ｓｎから成る銅錫化合物を含有した拡散層６を介して接続されるので、両者の接合が強固なものとなり、その結果、配線基板に長期の熱負荷を繰返し印加した場合においても、両者間の導通抵抗が高くなることはなく、配線導体と貫通導体との間で断線することのない接続信頼性に優れた配線基板とすることができる。
【００２９】
このような配線基板は、以下に述べる方法により製作される。まず、例えばガラスクロスやアラミド繊維等の耐熱性繊維基材にエポキシ樹脂や変性ポリフェニレン樹脂等から成る熱硬化樹脂前駆体を含浸させて半硬化することにより絶縁シートを製作し、次に、絶縁シートの所定の位置に炭酸ガスレーザやＹＡＧレーザ等の従来周知の方法を採用して直径が３０〜２００μｍの貫通孔３を穿設する。
【００３０】
そして、貫通孔３に従来周知のスクリーン印刷法を採用して、錫を主成分とする金属粉末およびトリアジン系樹脂等の熱硬化性樹脂前駆体を含むペーストをスクリーン印刷法（圧入）で充填することによって貫通導体４を形成する。その後、別途準備した、表面に銅箔から成る配線導体２を絶縁シート上に所定のパターンに被着形成した、ポリエチレンテレフタレート（ＰＥＴ）樹脂等の耐熱性樹脂から成るる転写シートを絶縁シートに、所定の貫通導体４と配線導体２とが接続するように位置合わせして重ね合わせ、これらを熱プレス機を用いて１００〜１５０℃の温度で数分間プレスすることにより転写シートを絶縁シートに圧接して、配線導体２を絶縁シートに転写埋入させる。
【００３１】
しかる後、転写シートを絶縁シートから剥離するとともに転写シートを剥離した絶縁シートを複数枚上下に重ね合わせ、熱プレス機を用いて錫の軟化点以上の温度で１時間以上加熱プレスすることにより、金属粉末５の錫が貫通導体４と接触した配線導体２表面に拡散し、Ｃｕ３Ｓｎから成る銅錫化合物を含有する拡散層６が形成された配線基板となる。
【００３２】
なお、絶縁層１の一方の最外層表面に形成された配線導体２の一部は、前述したように電子部品７の各電極に導体バンプ１１を介して接合される電子部品７接続用の実装用電極を形成し、絶縁層１の他方の最外層表面に形成された配線導体２の一部は、外部電気回路基板（図示せず）の各電極に導体バンプを介して接続される外部接続用の実装用電極を形成している。そして、実装用電極の表面には、その酸化腐蝕を防止するとともに導体バンプとの接続を良好とするために、半田との濡れ性が良好で耐腐蝕性に優れたニッケル−金等のめっき層が被着されている。
【００３３】
また、最外層の絶縁層１および実装用電極には、前述したように必要に応じて実装用電極の中央部を露出させる開口を有する耐半田樹脂層１２が被着されており、このような耐半田樹脂層１２は、感光性樹脂と光開始剤と無機粉末フィラーとから成る未硬化樹脂フィルムを最外層の絶縁層１表面に被着させる、あるいは、熱硬化性樹脂と無機粉末フィラーとから成る未硬化樹脂ワニスを最外層の絶縁層１表面に塗布するとともに乾燥し、しかる後、露光・現像により開口部を形成し、これをＵＶ硬化および熱硬化させることにより形成される。
【００３４】
また、本発明の電子装置は、上述の配線基板の表面に電子部品７を実装するとともに、導体バンプ１１を介して電子部品７の各電極と配線基板の実装用電極とを電気的に接続することにより製作される。なお、本発明の電子装置においては電子部品７と貫通導体４とを導体バンプ１１を介して直接接続してもよい。
【００３５】
かくして、本発明の電子装置によれば、上記の配線基板の表面に電子部品７を実装するとともに、この電子部品７の電極を配線導体２または貫通導体４に電気的に接続したことから、銅箔に形成されたＣｕ３Ｓｎから成る銅錫化合物を含有する拡散層６を介して配線導体２と貫通導体４とが強固に接続され、その結果、電子装置に長期の熱負荷を繰返し印加しても配線導体２と貫通導体４との導通抵抗が高くなることはなく、配線導体２と貫通導体４との間で断線することのない接続信頼性に優れた電子装置とすることができる。
【００３６】
なお、本発明は上述の実施例に限定されるものではなく、本発明の要旨を逸脱しない範囲であれば種々の変更は可能であり、例えば上述の実施例では絶縁層を４層積層した場合を例示したが、５層以上であってもかまわない。
【００３７】
【発明の効果】
本発明の配線基板によれば、貫通導体と接続する銅箔の表面に錫が拡散して形成されたＣｕ３Ｓｎを含有する拡散層が形成されていることから、貫通導体の金属粉末と配線導体の銅箔とが異種金属でありながら、導電性の高いＣｕ３Ｓｎを含有した拡散層を介して接続されるので、両者の接合が強固なものとなり、その結果、配線基板に長期の熱負荷を繰返し印加した場合においても、両者間の導通抵抗が高くなることはなく、配線導体と貫通導体との間で断線することのない接続信頼性に優れた配線基板とすることができる。
【００３８】
また、本発明の電子装置によれば、上記の配線基板の表面に電子部品を実装するとともに、この電子部品の電極を配線導体または貫通導体に電気的に接続したことから、銅箔に形成された導電性の高いＣｕ３Ｓｎを含有した拡散層を介して配線導体と貫通導体とが強固に接続され、その結果、電子装置に長期の熱負荷を繰返し印加しても配線導体と貫通導体との導通抵抗が高くなることはなく、配線導体と貫通導体との間で断線することのない接続信頼性に優れた電子装置とすることができる。
【図面の簡単な説明】
【図１】本発明の配線基板に半導体素子等の電子部品を搭載して成る電子装置の実施の形態の一例の断面図である。
【図２】図１の要部拡大断面図である。
【符号の説明】
１・・・・・・絶縁層
２・・・・・・配線導体
３・・・・・・貫通孔
４・・・・・・貫通導体
５・・・・・・金属粉末
６・・・・・・拡散層
７・・・・・・電子部品[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a wiring board having a plurality of insulating layers and wiring conductors alternately stacked, electrically connecting upper and lower wiring conductors with through conductors, and having excellent connection reliability between the wiring conductors and the through conductors. And an electronic device using the same.
[0002]
[Prior art]
Conventionally, as a wiring substrate used for mounting electronic components such as semiconductor elements and resistors, an insulating layer made of a glass base material and a thermosetting resin and a wiring conductor made of a copper foil or the like are alternately laminated in plural numbers. Printed circuit boards are known. Such a printed circuit board is manufactured by laminating and bonding a plurality of insulating layers each having a wiring conductor formed on the surface to form a multilayer. However, this printed circuit board uses an insulating sheet in which the insulating layer has some plasticity because the surface becomes uneven due to a step between the portion where the wiring conductor on the surface of the insulating layer is formed and the other portion, When the insulating sheet is laminated, the portion of the insulating sheet that comes into contact with the wiring conductor is plastically deformed in accordance with the thickness of the wiring conductor, so that the wiring conductor is embedded in the insulating sheet, laminated and hardened, so that the printed circuit board surface is formed. No irregularities are formed on the surface. The wiring conductors located above and below the printed circuit board are electrically connected via through conductors formed in the insulating layer.
[0003]
Such a printed circuit board is formed by forming a through hole with a laser in a wiring board region of an insulating sheet in which a thermosetting resin precursor is impregnated into a heat-resistant fiber base material, and a metal powder such as silver and the like in the through hole. A conductor paste made of a thermosetting resin precursor is embedded by screen printing (press-fitting) to form a through conductor, while a copper foil is applied to the surface of a transfer sheet made of a heat-resistant resin and etched into a predetermined pattern. Wiring conductors are formed at positions corresponding to the respective wiring board areas on the insulating sheet, and thereafter, the transfer sheet having the wiring conductors formed thereon is pressed against the insulating sheet having the through conductors formed thereon, and the wiring conductors are transferred and embedded in the insulating sheet. After the transfer sheet is separated from the insulating sheet, a plurality of insulating sheets in which the wiring conductors are embedded are laminated, and several minutes at a temperature of 180 to 200 ° C. A few hours, is fabricated by curing integrated thermosetting resin precursor using a hot press.
[0004]
In addition, the method of forming the through conductor by filling the conductor paste is different from the method of forming the through conductor by the conventional plating method, because the through conductor can be provided at an arbitrary position. It is attracting attention as a suitable method.
[0005]
[Patent Document 1]
JP 2001-44590 A
[Problems to be solved by the invention]
However, in the conventional wiring board in which the through conductor is formed by filling the conductor paste, the connection between the metal powder of the through conductor and the copper foil of the wiring conductor is a connection between dissimilar metals, and the connection is made by simply contacting. Therefore, when a long-term thermal load is repeatedly applied to the wiring board, there is a problem that the conduction resistance between the two becomes high and the connection between the through conductor and the wiring conductor is disconnected. .
[0007]
The present invention has been completed in view of the problems of the related art, and an object of the present invention is to provide a wiring board having excellent connection reliability between a wiring conductor and a through conductor even when a long-term heat load is repeatedly applied. Is provided.
[0008]
[Means for Solving the Problems]
The wiring board according to the present invention has an insulating layer formed by impregnating a heat-resistant fiber base material with a thermosetting resin and a wiring conductor made of copper foil, which are alternately laminated in a plurality of layers, and is vertically positioned with the insulating layer interposed therebetween. The wiring conductors are electrically connected to each other by a through conductor formed by filling a through hole provided in the insulating layer with a conductive material containing a metal powder containing tin as a main component and a thermosetting resin. In the substrate, the wiring conductor is characterized in that a diffusion layer containing Cu 3 Sn formed by diffusion of the tin is formed on a surface connected to the through conductor.
[0009]
According to the wiring board of the present invention, since the diffusion layer containing Cu 3 Sn formed by diffusion of tin is formed on the surface of the copper foil connected to the through conductor, the metal powder of the through conductor and the wiring Although the copper foil of the conductor is a dissimilar metal, it is connected via a diffusion layer containing a copper-tin compound made of Cu 3 Sn having high conductivity, so that the bonding between the two becomes strong and, as a result, the wiring Even when a long-term thermal load is repeatedly applied to the substrate, the conduction resistance between them does not increase, and the wiring substrate has excellent connection reliability without disconnection between the wiring conductor and the through conductor. be able to.
[0010]
Further, an electronic device according to the present invention is characterized in that an electronic component is mounted on the surface of the wiring board, and electrodes of the electronic component are electrically connected to a wiring conductor or a through conductor. .
[0011]
According to the electronic device of the present invention, the electronic component is mounted on the surface of the wiring board, and the electrodes of the electronic component are electrically connected to the wiring conductor or the through conductor. The wiring conductor and the penetrating conductor are firmly connected via the diffusion layer containing the copper-tin compound made of Cu 3 Sn, which is highly conductive. As a result, even if the long-term heat load is repeatedly applied to the electronic device, the wiring conductor and the through conductor are connected. It is possible to provide an electronic device having excellent connection reliability without a breakage between the wiring conductor and the through conductor without increasing the conduction resistance with the through conductor.
[0012]
BEST MODE FOR CARRYING OUT THE INVENTION
Next, a wiring board and an electronic device according to the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a cross-sectional view showing an example of an embodiment of an electronic device in which electronic components such as semiconductor elements are mounted on a wiring board of the present invention, and FIG. 2 is an enlarged cross-sectional view of a main part thereof. In these figures, 1 is an insulating layer, 2 is a wiring conductor, 3 is a through hole, 4 is a through conductor, 5 is a metal powder, 6 is a diffusion layer, and 7 is an electronic component. FIG. 1 shows an example in which a wiring board is manufactured by laminating four insulating layers 1.
[0013]
The wiring board of the present invention has a plurality of insulating layers 1 formed by impregnating a heat-resistant fiber base material with a thermosetting resin and a plurality of wiring conductors 2 made of copper foil, and the insulating layers 1 are vertically stacked with the insulating layer 1 interposed therebetween. The wiring conductors 2 located are connected to each other by a through conductor 4 made of a conductive material containing a metal powder 5 containing tin as a main component and a thermosetting resin filled in a through hole 3 provided in the insulating layer 1. Is formed. A part of the wiring conductor 2 formed on one outermost surface of the insulating layer 1 forms a mounting electrode for connecting the electronic component 7 to each electrode of the electronic component 7 via the conductor bump 11. Further, a part of the wiring conductor 2 formed on the other outermost layer surface of the insulating layer 1 is connected to each electrode of an external electric circuit board (not shown) via the conductor bump 11 for external connection. A mounting electrode is formed. The outermost insulating layer 1 and the mounting electrode are covered with a solder-resistant resin layer 12 having an opening for exposing a central portion of the mounting electrode as necessary.
[0014]
Further, the electronic device of the present invention is formed by mounting the electronic component 7 on the surface of the wiring board and electrically connecting the electrodes of the electronic component 7 to the wiring conductor 2 or the through conductor 4.
[0015]
The insulating layer 1 has a thickness of 50 to 150 μm, has a function of supporting the wiring conductors 2 and maintaining insulation between the wiring conductors 2 located above and below, and includes a glass cloth, an aramid fiber, and a wholly aromatic ester fiber. And a thermosetting resin such as a bismaleimide triazine resin or an allyl-modified polyphenylene ether resin. If the thickness of the insulating layer 1 is less than 50 μm, the rigidity of the wiring board decreases, and the wiring board tends to bend. If the thickness exceeds 150 μm, the thickness of the insulating layer 1 becomes unnecessarily thick, and Lightening tends to be difficult. Therefore, the insulating layer 1 preferably has a thickness of 50 to 150 μm.
[0016]
A wiring conductor 2 is embedded in the surface of each insulating layer 1. The wiring conductor 2 is made of copper metal foil, and has a function as a part of a conductive path that electrically connects each electrode of the electronic component 7 such as a semiconductor element mounted on the wiring board to an external electric circuit board. , A width of 20 to 200 μm and a thickness of 5 to 50 μm. If the width of the wiring conductor 2 is less than 20 μm, deformation and disconnection of the wiring conductor 2 tend to occur easily, and if it exceeds 200 μm, high-density wiring tends not to be formed. Further, when the thickness of the wiring conductor 2 is less than 5 μm, the strength of the wiring conductor 2 tends to decrease and deformation or disconnection tends to occur, and when it exceeds 50 μm, it tends to be difficult to embed the insulating layer 1. . Therefore, the wiring conductor 2 preferably has a width of 20 to 200 μm and a thickness of 5 to 50 μm.
[0017]
The surface of the wiring conductor 2 is preferably formed with irregularities having an average surface roughness of 1 to 3 μm on the surface thereof in order to enhance adhesion and bonding with the through conductor 4 described later. Such irregularities are formed by treating with formic acid and hydrochloric acid. If the surface roughness is less than 1 μm, the adhesion strength to the insulating layer 1 is reduced, and the wiring conductor 2 tends to be easily separated from the insulating layer 1. If the surface roughness exceeds 3 μm, the wiring conductor 2 and the metal powder 5 , There is a tendency that tin does not diffuse sufficiently and the diffusion layer 6 cannot be formed satisfactorily. Therefore, the average surface roughness is preferably in the range of 1 to 3 μm.
[0018]
Further, in each of the insulating layers 1, a plurality of through conductors 4 are provided from the upper surface to the lower surface. These through conductors 4 have a function of electrically connecting the wiring conductors 2 located above and below the insulating layer 1, have a diameter of 30 to 200 μm, and have a through hole 3 formed in the insulating layer 1. Is formed by embedding and thermosetting a paste composed of a metal powder mainly composed of, for example, and a triazine-based thermosetting resin. If the diameter of the through conductor 4 is less than 30 μm, the processing tends to be difficult, and if it exceeds 200 μm, high-density wiring tends not to be formed. Therefore, it is preferable that the diameter of the through conductor 4 be 30 to 200 μm.
[0019]
Further, the content of the metal powder 5 in the paste is preferably 80 to 95% by weight. When the content of the metal powder 5 is less than 80% by weight, the connection between the metal powders 5 is hindered by the triazine-based thermosetting resin, and the conduction resistance tends to increase. Tends to be too high to be satisfactorily embedded. Therefore, the content of the metal powder 5 in the paste is preferably 80 to 95% by weight.
[0020]
Such a metal powder 5 is made of an alloy such as tin or tin / bismuth / copper, and contains 70 to 90% by weight of tin. When the content of tin is less than 70% by weight, the diffusion layer 6 containing Cu 3 Sn formed by diffusion of tin in the metal powder 5 into the copper foil forming the wiring conductor 2 as described later is favorably formed. When the content exceeds 90% by weight, the amount of tin diffused into the copper foil increases, and the diffusion layer 6 having a high tin content has a higher conduction resistance than the copper foil. There is a tendency that the conduction resistance with the conductor 4 becomes large.
[0021]
The average particle size of the metal powder 5 is preferably 5 to 10 μm. If the average particle size is smaller than 5 μm, the viscosity of the paste tends to be too high to be satisfactorily embedded. It tends to be high. Therefore, the average particle size of the metal powder 5 is preferably 5 to 10 μm.
[0022]
The thermosetting resin is preferably a triazine-based thermosetting resin such as triallyl cyanurate or triallyl isocyanurate / tris epoxypropyl isocyanurate / tris (2-hydroxyethyl) isocyanurate.
[0023]
In the wiring board of the present invention, the wiring conductor 2 has a diffusion layer containing Cu 3 Sn formed by diffusing tin on the surface of the copper foil connected to the through conductor 4. is important.
According to the wiring board of the present invention, since the diffusion layer containing Cu 3 Sn formed by diffusion of tin is formed on the surface of the copper foil connected to the through conductor 4, the metal powder of the through conductor 4 is formed. 5 and the copper foil of the wiring conductor 2 are connected through the diffusion layer 6 containing Cu 3 Sn having high conductivity while being a dissimilar metal, so that the bonding between the two becomes strong and, as a result, the wiring Even when a long-term thermal load is repeatedly applied to the substrate, the conduction resistance between them does not increase, and the wiring substrate has excellent connection reliability without disconnection between the wiring conductor and the through conductor. be able to. Furthermore, since the copper-tin compound made of Cu 3 Sn of the diffusion layer 6 has high conductivity, the junction between the through conductor 4 and the wiring conductor 2 can have low resistance.
[0024]
The diffusion layer 6 containing Cu 3 Sn is formed of a wiring conductor 2 made of copper, a metal powder 5 containing tin as a main component, and a penetrating conductor 4 filled with a conductive material containing a thermosetting resin. Are formed by performing a heat treatment at a temperature equal to or higher than the melting point of tin (about 232 ° C.) for several minutes to several hours. Examples of the formed copper tin compound include Cu 3 Sn and Cu 6 Sn 5 . Cu 3 Sn is a crystalline compound in which copper and tin have a ratio of 3: 1. Since the diffusion layer 6 contains Cu 3 Sn, the metal powder 5 of the through conductor 4 and the copper foil of the wiring conductor 2 Becomes strong, and the resistance of the joint can be reduced. Note that Cu 6 Sn 5 may be present in the diffusion layer 6 together with Cu 3 Sn, but in that case, the Cu 3 Sn ratio is preferably 5% or more. In order to form a sufficient amount of the Cu 3 Sn diffusion layer 6, it is preferable to heat-treat the wiring board at a temperature equal to or higher than the melting point of tin (about 232 ° C.) for 1 hour or more.
[0025]
Such a component ratio of Cu 3 Sn and Cu 6 Sn 5 .Cu in the diffusion layer 6 can be quantified by a scanning electron micrograph (SEM photograph) of a cross section of the wiring substrate. According to this SEM photograph, Cu 3 Sn and Cu 6 Sn 5 .Cu can be distinguished by their respective color densities, and the color depth of Cu 3 Sn is the highest, then Cu 6 Sn 5 , and then Cu The order is black.
[0026]
If the thickness of the diffusion layer 6 formed by diffusion of tin is smaller than 1 μm, the conduction resistance tends to increase. If the thickness is larger than 5 μm, the resistance of the tin-copper alloy is higher than the resistance of the copper foil. Therefore, the conduction resistance tends to increase. Therefore, the thickness of the diffusion layer 6 formed by diffusion of tin on the surface of the wiring conductor 2 connected to the through conductor 4 is preferably 1 to 5 μm.
[0027]
Further, the spread of the diffusion layer 6 on the surface of the wiring conductor 2 connected to the through conductor 4 is preferably 1 to 30% with respect to the opening of the through conductor 4. If the spread of the diffusion layer 6 is less than 1%, the bond between the metal powder 5 and the wiring conductor 2 becomes weak, and the conduction resistance between the two tends to increase when a long-term heat load is repeatedly applied to the wiring board. If it exceeds 30%, when the metal powder 5 described later is melted at a high temperature, the thermosetting resin tends to be thermally degraded and the insulating property of the insulating layer 1 tends to be reduced. Therefore, the spread of the diffusion layer 6 on the surface of the wiring conductor 2 connected to the through conductor 4 is preferably 1% to 30% of the opening of the through conductor 4.
[0028]
Thus, according to the wiring board of the present invention, since the diffusion layer containing the copper tin compound composed of Cu 3 Sn formed by diffusion of tin is formed on the surface of the copper foil connected to the through conductor 4. Since the metal powder 5 of the through conductor 4 and the copper foil of the wiring conductor 2 are different metals, they are connected via the diffusion layer 6 containing a copper-tin compound made of Cu 3 Sn having high conductivity. The result is that even when a long-term thermal load is repeatedly applied to the wiring board, the conduction resistance between them does not increase and the wiring conductor breaks between the wiring conductor and the through conductor. It is possible to obtain a wiring board having no connection reliability and excellent in connection reliability.
[0029]
Such a wiring board is manufactured by the method described below. First, an insulating sheet is manufactured by impregnating a thermosetting resin precursor made of an epoxy resin or a modified polyphenylene resin or the like into a heat-resistant fiber base material such as a glass cloth or an aramid fiber, and semi-curing the impregnated sheet. A through hole 3 having a diameter of 30 to 200 μm is formed at a predetermined position by using a conventionally known method such as a carbon dioxide laser or a YAG laser.
[0030]
Then, a paste containing a metal powder containing tin as a main component and a thermosetting resin precursor such as a triazine-based resin is filled into the through-holes 3 by a screen printing method (press-fitting). Thus, the through conductor 4 is formed. Then, a separately prepared transfer sheet made of a heat-resistant resin such as polyethylene terephthalate (PET) resin in which a wiring conductor 2 made of copper foil on the surface is formed in a predetermined pattern on the insulating sheet, A predetermined through conductor 4 and a wiring conductor 2 are aligned so as to be connected and overlapped, and these are pressed with a hot press at a temperature of 100 to 150 ° C. for several minutes to press the transfer sheet against the insulating sheet. Then, the wiring conductor 2 is transferred and embedded in the insulating sheet.
[0031]
Thereafter, the transfer sheet is peeled off from the insulating sheet, and a plurality of insulating sheets from which the transfer sheet has been peeled are stacked one on top of the other, and hot-pressed at a temperature equal to or higher than the softening point of tin for 1 hour or more using a hot press machine. The tin of the metal powder 5 diffuses into the surface of the wiring conductor 2 in contact with the through conductor 4, resulting in a wiring substrate on which a diffusion layer 6 containing a copper tin compound made of Cu 3 Sn is formed.
[0032]
A part of the wiring conductor 2 formed on one outermost layer surface of the insulating layer 1 is connected to each electrode of the electronic component 7 via the conductor bump 11 as described above, for mounting the electronic component 7. Of the wiring conductor 2 formed on the surface of the other outermost layer of the insulating layer 1 is connected to each electrode of an external electric circuit board (not shown) via a conductor bump. Mounting electrodes are formed. Then, on the surface of the mounting electrode, a plating layer made of nickel-gold or the like having good wettability with solder and excellent corrosion resistance is provided in order to prevent the oxidation corrosion and improve the connection with the conductor bumps. Is attached.
[0033]
Further, the outermost insulating layer 1 and the mounting electrode are covered with the solder-resistant resin layer 12 having an opening for exposing the central portion of the mounting electrode as necessary, as described above. The solder-resistant resin layer 12 is formed by applying an uncured resin film composed of a photosensitive resin, a photoinitiator, and an inorganic powder filler to the surface of the outermost insulating layer 1 or by using a thermosetting resin and an inorganic powder filler. The uncured resin varnish is applied to the surface of the outermost insulating layer 1 and dried, and thereafter, an opening is formed by exposure and development, and the opening is formed by UV curing and heat curing.
[0034]
In the electronic device of the present invention, the electronic component 7 is mounted on the surface of the above-described wiring board, and each electrode of the electronic component 7 is electrically connected to the mounting electrode of the wiring board via the conductive bump 11. Produced by In the electronic device of the present invention, the electronic component 7 and the through conductor 4 may be directly connected via the conductor bump 11.
[0035]
Thus, according to the electronic device of the present invention, the electronic component 7 is mounted on the surface of the wiring board, and the electrodes of the electronic component 7 are electrically connected to the wiring conductor 2 or the through conductor 4. The wiring conductor 2 and the through conductor 4 are firmly connected via the diffusion layer 6 containing a copper tin compound made of Cu 3 Sn formed on the foil. As a result, a long-term heat load is repeatedly applied to the electronic device. Even so, the conduction resistance between the wiring conductor 2 and the through conductor 4 does not increase, and an electronic device with excellent connection reliability without disconnection between the wiring conductor 2 and the through conductor 4 can be provided.
[0036]
It should be noted that the present invention is not limited to the above-described embodiment, and various changes can be made without departing from the gist of the present invention. For example, in the above-described embodiment, when four insulating layers are laminated. However, five or more layers may be used.
[0037]
【The invention's effect】
According to the wiring board of the present invention, since the diffusion layer containing Cu 3 Sn formed by diffusion of tin is formed on the surface of the copper foil connected to the through conductor, the metal powder of the through conductor and the wiring Since the copper foil of the conductor is a dissimilar metal and is connected through a diffusion layer containing Cu 3 Sn having high conductivity, the bonding between the two becomes strong, and as a result, long-term heat is applied to the wiring board. Even when a load is repeatedly applied, the conduction resistance between the two does not increase, and a wiring board having excellent connection reliability without disconnection between the wiring conductor and the through conductor can be provided.
[0038]
Further, according to the electronic device of the present invention, the electronic component is mounted on the surface of the wiring board, and the electrodes of the electronic component are electrically connected to the wiring conductor or the through conductor. The wiring conductor and the through conductor are firmly connected via the diffusion layer containing Cu 3 Sn having high conductivity. As a result, even when a long-term thermal load is repeatedly applied to the electronic device, the wiring conductor and the through conductor are not connected to each other. Thus, an electronic device having excellent connection reliability without disconnection between the wiring conductor and the through conductor without increasing the conduction resistance of the wiring conductor can be provided.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of an example of an embodiment of an electronic device in which an electronic component such as a semiconductor element is mounted on a wiring board of the present invention.
FIG. 2 is an enlarged sectional view of a main part of FIG.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Insulating layer 2 ... Wiring conductor 3 ... Through hole 4 ... Through conductor 5 ... Metal powder 6 ... ..Diffusion layer 7 ... Electronic components

Claims (2)

耐熱性繊維基材に熱硬化性樹脂を含浸させて成る絶縁層と銅箔から成る配線導体とを交互に複数層積層するとともに、前記絶縁層を挟んで上下に位置する前記配線導体同士を、前記絶縁層に設けた貫通孔を錫を主成分とする金属粉末および熱硬化性樹脂を含む導電性材料で充填して成る貫通導体により電気的に接続して成る配線基板において、前記配線導体は前記貫通導体と接続された表面に前記錫が拡散して形成されたＣｕ３Ｓｎを含有する拡散層が形成されていることを特徴とする配線基板。While alternately laminating a plurality of wiring layers made of a copper foil and an insulating layer formed by impregnating a thermosetting resin into a heat-resistant fiber base material, the wiring conductors positioned vertically above and below the insulating layer, In a wiring board, the through holes provided in the insulating layer are electrically connected by through conductors filled with a conductive material containing a metal powder containing tin as a main component and a thermosetting resin, wherein the wiring conductors are A wiring board, wherein a diffusion layer containing Cu 3 Sn formed by diffusion of tin is formed on a surface connected to the through conductor. 請求項１記載の配線基板の表面に電子部品を実装するとともに、該電子部品の電極を前記配線導体または前記貫通導体に電気的に接続して成ることを特徴とする電子装置。An electronic device comprising: an electronic component mounted on a surface of the wiring board according to claim 1; and an electrode of the electronic component electrically connected to the wiring conductor or the through conductor.
JP2002343337A 2002-11-27 2002-11-27 Wiring board and electronic device using the same Pending JP2004179362A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008143099A1 (en) * 2007-05-17 2008-11-27 Fujikura Ltd. Laminated wiring board and method for manufacturing the same
JP2009111331A (en) * 2007-10-26 2009-05-21 Samsung Electro Mech Co Ltd Printed-circuit substrate and manufacturing method therefor
US8587116B2 (en) 2010-09-30 2013-11-19 Infineon Technologies Ag Semiconductor module comprising an insert
US9214442B2 (en) * 2007-03-19 2015-12-15 Infineon Technologies Ag Power semiconductor module, method for producing a power semiconductor module, and semiconductor chip
WO2023248658A1 (en) * 2022-06-23 2023-12-28 株式会社村田製作所 Circuit module and method for manufacturing circuit module

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9214442B2 (en) * 2007-03-19 2015-12-15 Infineon Technologies Ag Power semiconductor module, method for producing a power semiconductor module, and semiconductor chip
WO2008143099A1 (en) * 2007-05-17 2008-11-27 Fujikura Ltd. Laminated wiring board and method for manufacturing the same
JPWO2008143099A1 (en) * 2007-05-17 2010-08-05 株式会社フジクラ Multilayer wiring board and manufacturing method thereof
CN101683007B (en) * 2007-05-17 2011-12-28 株式会社藤仓 Laminated wiring board and method for manufacturing the same
KR101116712B1 (en) * 2007-05-17 2012-03-13 가부시키가이샤후지쿠라 Laminated wiring board and method for manufacturing the same
JP4955763B2 (en) * 2007-05-17 2012-06-20 株式会社フジクラ Multilayer wiring board and manufacturing method thereof
US8502086B2 (en) 2007-05-17 2013-08-06 Fujikura Ltd. Laminated wiring board and method for manufacturing the same
JP2009111331A (en) * 2007-10-26 2009-05-21 Samsung Electro Mech Co Ltd Printed-circuit substrate and manufacturing method therefor
US8587116B2 (en) 2010-09-30 2013-11-19 Infineon Technologies Ag Semiconductor module comprising an insert
WO2023248658A1 (en) * 2022-06-23 2023-12-28 株式会社村田製作所 Circuit module and method for manufacturing circuit module

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