JP2004174904A - Method for manufacturing substrate layer-including laminated material and method for manufacturing part using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a substrate layer-including laminated material by laminating a substrate layer, an intermediate layer, an insulating layer and an electrically conductive layer, and a method for manufacturing a part using the same. <P>SOLUTION: This substrate layer-including laminated material 30 is manufactured by successively laminating the substrate layer 26, the intermediate layer 25, the insulating layer 24 and the electrically conductive layer 23. At least one surface to be laminated of the substrate layer-including laminated material 30 is activated and, after the intermediate layer 25 is laminated on at least one surface to be laminated of the substrate layer 26 or the insulating layer 24, the intermediate layer 25 is brought into contact with the substrate layer 26 and the insulating layer 24 so as to be sandwiched between the substrate layer 26 and the insulating layer 24, and they are superposed one upon another and together laminated and bonded to manufacture the substrate layer-including laminated material 30. In addition, this substrate layer-including laminated material 30 is used to manufacture the part for use in a disk head or the like. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention provides a base layer having sufficient mechanical strength and the like to support a base layer laminate, an intermediate layer, an insulating layer having a required dielectric constant and excellent insulating properties, and a required conductivity. The present invention relates to a method for manufacturing a base layer laminated material formed by laminating a conductive layer, and a method for manufacturing a component using the base layer laminated material.
[0002]
[Prior art]
In recent years, the density of hard disk drives and the speed of data transfer have been rapidly increasing. Along with this, components used in hard disk devices, especially magnetic heads, have been remarkably reduced in size and transmission speed has been increased. For this reason, it is required that the suspension on which the magnetic head is mounted be sophisticated. Conventionally, a method has been disclosed in which a metal thin film is formed on a film, or a metal thin film is formed and a metal foil is laminated (for example, see Patent Document 1). Further, a method of joining metal plates without applying excessive heat or pressure is disclosed (for example, see Patent Document 2).
[0003]
Prior art document information on the present application includes the following.
[Patent Document 1]
Japanese Patent Application Laid-Open No. 2002-113811 [Patent Document 2]
JP-A-1-224184
[Problems to be solved by the invention]
The present invention is obtained by laminating a base layer having sufficient mechanical strength or the like to support a base layer laminated material, an intermediate layer, an insulating layer excellent in insulation, and a conductive layer excellent in conductivity. It is an object of the present invention to provide a method of manufacturing a base layer laminate and a method of manufacturing a component using the base layer laminate applicable to disk head applications and the like.
[0005]
[Means for Solving the Problems]
As a first solution to the above-mentioned problem, a method of manufacturing a base layer laminate according to the present invention comprises a base layer laminate comprising a base layer, an intermediate layer, an insulating layer, and a conductive layer, which are sequentially laminated. At least one bonding surface is a method in which each surface to be bonded is brought into contact by activating and abutting each other, and is stacked and bonded. Alternatively, in a method of manufacturing a base layer laminated material in which a base layer, an intermediate layer, an insulating layer, and a conductive layer are sequentially laminated, at least one surface of the base layer laminated material to be laminated is activated, and After laminating the intermediate layer on at least one of the layers to be laminated, the intermediate layer is brought into contact with the base layer and the insulating layer so as to be in contact with each other, and the layers are laminated and joined.
[0006]
As a second solution to the above-mentioned problem, a method for manufacturing a component according to the present invention is a method using a base layer laminated material in which a base layer, an intermediate layer, an insulating layer, and a conductive layer are sequentially stacked.
[0007]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, the production method of the present invention will be described. FIG. 3 is a schematic cross-sectional view showing one embodiment of a base layer laminate using the manufacturing method of the present invention, showing an example in which a base layer 26, an intermediate layer 25, an insulating layer 24, and a conductive layer 23 are stacked. I have. The base layer laminated material 30 activates, for example, the insulating layer 24 side of the laminate 20 in which the conductive layer 23 is laminated on one surface of the insulating layer 24 as shown in FIG. And then bonding it after laminating the intermediate layer 25 on at least one of the insulating layer 24 and the base layer 26, or by bonding the conductive layer 23 to both surfaces of the insulating layer 24 as shown in FIG. It may be manufactured by activating and joining the intermediate layer 25 side of the laminate 22 formed by laminating the intermediate layers 25 and the base layer 26 facing the intermediate layer 25.
[0008]
The type of the material of the insulating layer 24 is not particularly limited as long as the material can produce the base layer laminated material, and can be appropriately selected and used depending on the use of the base layer laminated material. For example, an organic polymer substance such as a plastic or a mixture of a plastic and a powder or a fiber mixed with a material having sufficient insulating properties can be used. When the base layer laminate is used for a wiring board or the like, a material having an appropriate dielectric constant is preferable. In addition, when applied to a disk head application such as a suspension with a circuit, a liquid crystal polymer (LCP) can be used.
[0009]
Examples of the plastic used for the insulating layer include acrylic resin, amino resin (melamine resin, urea resin, benzoguanamine resin, etc.), allyl resin, alkyd resin, urethane resin, liquid crystal polymer (LCP: Liquid Crystal Polymer), and EEA resin (Ethylene Ethylacrylate). Resin), AAS resin (Acrylonitrile Acrylate Styrene resin), ABS resin (Acrylonitrile Butadiene Styrene resin), ACS resin (Acrylinitrene styrene resin, Polystyrene resin, Polyethylene resin, Polystyrene resin) Copolymer, epoxy resin, silicon resin, styrene butadiene resin, phenol resin, fluoroethylene propylene, fluorine resin, polyacetal, polyarylate, polyamide (6 nylon, 11 nylon, 12 nylon, 66 nylon, 610 nylon, 612 nylon) Etc.), polyamideimide, polyimide, polyetherimide, polyetheretherketone, polyethersulfone, polyester (polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polycyclohexynedimer terephthalate, polytrimethylene terephthalate, polytrimethylene na Phthalate), polyolefin (polyethylene, polypropylene, etc.), polycarbonate, polychlorotrifluoroethylene, polysulfone, Polystyrene, polyphenylene sulfide, polybutadiene, polybutene, polymethylpentene, or the like may be used.
[0010]
The thickness of the insulating layer 24 is appropriately selected depending on the use of the base layer laminate. For example, it is 1 to 1000 μm. If the thickness is less than 1 μm, defects such as pinholes are likely to occur, so that it is difficult to form an insulating layer. If the thickness is more than 1000 μm, it becomes difficult to manufacture a base layer laminate. For example, if the application of the base layer laminate is a suspension with a circuit or the like, the range of 5 to 50 μm is preferable. When the thickness is less than 5 μm, it is difficult to secure insulation, and when it exceeds 50 μm, the weight becomes too heavy. More preferably, it is 10 to 20 μm.
[0011]
The material of the base layer 26 is not particularly limited as long as it is a material capable of producing the base layer laminate and has sufficient mechanical strength, and may be appropriately selected and used depending on the use of the base layer laminate. Can be. For example, a metal or alloy that is solid at normal temperature (for example, an alloy specified in JIS), a laminate thereof, or the like is used. The base layer has a role of supporting the base layer laminated material, but a material having an appropriate elasticity is preferable in applications where the thickness of the base layer laminated material is small. If the substrate layer laminate is used for a suspension with a circuit or the like, stainless steel specified in JIS can be used.
[0012]
The thickness of the base layer 26 is not particularly limited as long as the base layer laminate can be manufactured, and can be appropriately selected and used depending on the use of the base layer laminate. For example, the thickness is preferably 5 to 500 μm. If it is less than 5 μm, it will be difficult to maintain sufficient mechanical strength, and if it exceeds 500 μm, it will be difficult to produce a substrate layer laminate. More preferably, it is 10 to 50 μm. The base layer 26 may be a plate material such as an electrolytic foil or a rolled foil, may be a laminate in which a film material such as plating or vapor deposition is previously laminated on the plate material, or may be a laminate such as a clad material. .
[0013]
The material of the conductive layer 23 is not particularly limited as long as it is a material that can produce the base layer laminate and has the required conductivity, and may be appropriately selected and used depending on the use of the base layer laminate. it can. The conductive layer may be a conductor layer or a resistor layer having a single-layer structure, or may have a laminated structure including a plurality of layers. For example, there is a laminated structure of a conductor layer made of a material having a required conductivity and a resistor layer made of a material having a required resistivity. When the resistor layer and the conductor layer are stacked on the insulating layer in this order, the resistor layer can be exposed by removing only the conductor layer by etching or the like, and can be used as a resistor wiring. it can. If the application of the base layer laminate is a suspension with a circuit having a wiring board portion or the like, the conductive layer 23 may be made of a metal having excellent conductivity, such as Cu or Al.
[0014]
The conductor layer is made of, for example, a metal that is solid at room temperature (for example, Al, Cu, Ni, Ag, Pt, Au, or the like), or an alloy containing at least one of these metals (for example, an alloy specified in JIS). Etc.). The specific resistance at 20 ° C. may be in the range of 1 to 20 μΩ · cm. When used for wiring boards, it is possible to use metals having excellent conductivity, such as Cu and Al, and alloys having excellent conductivity containing at least one of these metals. That is, a copper layer, an aluminum layer, or the like can be used as the conductor layer. As the copper layer, in addition to Cu, oxygen-free copper specified in JIS H 3100, tough pitch copper, phosphor bronze, brass, copper beryllium-based alloy (for example, beryllium 2%, balance of copper alloy, etc.), copper-silver-based As the aluminum layer such as an alloy (for example, an alloy of 3 to 5% of silver, the balance of which is copper), an aluminum alloy such as 1000 series or 3000 series specified in JIS H 4000 can be applied in addition to Al.
[0015]
The resistor layer is, for example, a resistance alloy (for example, a resistance alloy specified in JIS) or a non-alloy resistance material. The resistivity of the resistance alloy at 0 ° C. is preferably in the range of 30 to 300 μΩ · cm, and the sheet resistance of the non-alloy resistance material is preferably in the range of 5 to 1000 Ω / □. Examples of the resistance alloy include copper-manganese alloys (for example, 12 to 15% of manganese, 2 to 4% of nickel, and the balance of copper), and copper-nickel alloys (for example, alloys of 55% of copper and 45% of nickel). ), Nickel-chromium alloys (for example, Ni-Cr alloys composed of 80% nickel and 20% chromium, Ni-Cr-Fe alloys, etc.), nickel-phosphorous alloys (for example, phosphorus 1 to 20%, balance nickel Alloy, nickel-boron-phosphorus-based alloy (for example, boron 2%, phosphorus 8 to 16%, the balance being nickel alloy), iron-chromium-based alloy (for example, chromium 20%, aluminum 3%, the balance being iron An Fe-Cr-Al alloy, an iron-nickel alloy (Fe-Ni alloy, Fe-Ni-Cr alloy, or the like), an iron-carbon alloy, or the like can be used. As the non-alloy resistance material, for example, a non-alloy conductive material which is solid at room temperature and has a required sheet resistance, for example, a conductive oxide, nitride or carbide can be used. As the oxide, SnO ₂ , In ₂ O ₃ , In ₂ O ₃ —SnO ₂ (ITO: Indium Tin Oxide), In ₄ Sn ₃ O ₁₂ , InGaZnO ₄ , ZnO, In ₂ O ₃ —ZnO, CuAlO ₂ , SrCu ₂ O ₂ , Cd ₂ SnO ₄ and the like.
[0016]
The thickness of the conductive layer 23 is not particularly limited as long as the base layer laminate can be manufactured, and can be appropriately selected and used depending on the use of the base layer laminate. The conductive layer 23 preferably has a thickness of, for example, 1 to 100 μm. If it is less than 1 μm, it is difficult to maintain sufficient conductivity, and if it exceeds 100 μm, it becomes too heavy. More preferably, it is 5 to 50 μm. The conductive layer is appropriately selected from dry film forming means such as CVD (Chemical Vapor Deposition), sputtering, vacuum deposition, and ion plating and wet film forming means such as electroless plating, depending on the use of the base layer laminate. be able to.
[0017]
The type of the material of the intermediate layer 25 is not particularly limited as long as it is a material that can produce the base layer laminated material, and can be appropriately selected and used depending on the use of the base layer laminated material. For example, it is a material that can be used for the conductive layer 23. If the substrate layer laminate is used for a suspension with a circuit or the like, the intermediate layer 25 may be made of Cu or the like.
[0018]
The thickness of the intermediate layer 25 is not particularly limited as long as the base layer laminate can be manufactured, and can be appropriately selected and used depending on the use of the base layer laminate. The intermediate layer 25 preferably has a thickness of, for example, 0.01 to 5 μm. If it is less than 0.01 μm, it is difficult to form an intermediate layer, and if it exceeds 5 μm, the production time becomes too long. More preferably, it is 0.02 to 1 μm. The intermediate layer 25 may have a single-layer structure or a multilayer structure including a plurality of layers. For example, an intermediate layer may be laminated on both the insulating layer 24 and the substrate layer 26 in lamination bonding at the time of manufacturing the substrate layer laminated material. The intermediate layer is appropriately selected from dry film forming means such as CVD (Chemical Vapor Deposition), sputtering, vacuum deposition, and ion plating, and wet film forming means such as electroless plating, depending on the use of the base layer laminate. be able to.
[0019]
A method of manufacturing the base layer laminate 30 shown in FIG. 3 using the activation bonding method will be described. First, the insulating layer 24 side of the laminate 20 in which the conductive layer 23 is laminated on one surface of the insulating layer 24 as shown in FIG. A case in which an intermediate layer 25 is laminated on at least one of the insulating layers 24 only on the insulating layer 24 side, for example, and then joined will be described. As shown in FIG. 4, in the vacuum chamber 52, an activation treatment device 70 activates the joining surface side of the laminate 20 provided on the rewind reel 62 on the insulating layer 24 side. Similarly, the activation treatment device 80 activates the bonding surface side of the base layer 26 installed on the rewind reel 64.
[0020]
The activation process is performed as follows. That is, the conductive layer 23 side of the stacked body 20 loaded in the vacuum chamber 52 and the base layer 26 are each brought into contact with one electrode A grounded, and between the other electrode B insulated and supported. Glow discharge is performed by applying an alternating current of 1 to 50 MHz in an extremely low-pressure inert gas atmosphere of 10 to 1 × 10 ⁻³ Pa, and the lamination in contact with the electrode A exposed in the plasma generated by the glow discharge The sputter etching process is performed so that the area of the body 20 on the side of the insulating layer 24 and the area of the base layer 26 on the side to be joined is effectively 実 効 or less of the area of the electrode B. As the inert gas, argon, neon, xenon, krypton, or the like or a mixture containing these can be used. Preferably it is argon. If the inert gas pressure is less than 1 × 10 ⁻³ Pa, stable glow discharge is difficult to perform, and high-speed etching is difficult. If the inert gas pressure exceeds 10 Pa, the activation treatment efficiency decreases. If the applied alternating current is less than 1 MHz, it is difficult to maintain a stable glow discharge, and it is difficult to perform continuous etching. If the applied alternating current exceeds 50 MHz, oscillation tends to occur and the power supply system becomes complicated, which is not preferable. Further, in order to perform the etching efficiently, it is necessary to make each area of the insulating layer 24 side of the laminated body 20 in contact with the electrode A and the area of the base layer 26 smaller than the area of the electrode B effectively. The following makes it possible to perform etching with sufficient efficiency.
[0021]
Next, the intermediate layer 25 is formed on the surface of the laminate 20 on the insulating layer 24 side by the film forming unit 90. A case where sputtering is used as a film formation method will be described. In the film forming unit 90, the sputtering process can be performed by effectively increasing the area on the insulating layer 24 side, contrary to the activation processing device. That is, the conductive layer 23 side of the stacked body 20 loaded in the vacuum chamber 52 is brought into contact with one electrode A that is grounded, and 10 to 1 × 10 ⁻ Glow discharge is performed by applying an alternating current of 1 to 50 MHz in an extremely low-pressure inert gas atmosphere of ³ Pa, and the insulating layer 24 of the laminate 20 in contact with the electrode A exposed in the plasma generated by the glow discharge The sputtering process is performed so that the area of the side is effectively three times or more the area of the electrode C. As the inert gas, argon, neon, xenon, krypton, or the like or a mixture containing these can be used. Preferably it is argon. If the inert gas pressure is less than 1 × 10 ⁻³ Pa, stable glow discharge is difficult to perform, and if it exceeds 10 Pa, the sputtering efficiency is reduced. If the applied alternating current is less than 1 MHz, it is difficult to maintain a stable glow discharge and continuous sputtering is difficult. If the applied alternating current exceeds 50 MHz, oscillation tends to occur and the power supply system becomes complicated, which is not preferable. In addition, in order to perform efficient sputtering, it is necessary that the area of the laminated body 20 in contact with the electrode A on the side of the insulating layer 24 is effectively larger than the area of the electrode C. A film can be formed.
[0022]
As shown in FIG. 5, for example, a film forming unit 90 using sputtering is composed of a combination of an electrically floating target electrode 94 and a grounded water-cooled electrode roll 72. A target 92 for forming the intermediate layer 25 is provided on the target electrode 94, and a magnet 98 is provided to improve the efficiency of sputtering by a magnetic field. Further, in order to prevent abnormal heating of the target 92, the target electrode 94 can be water-cooled. By applying a high-frequency power supply 96 between the target electrode 94 and the electrode roll 72, plasma is generated to give ion bombardment to the target 92, and the target material released by this is laminated on the insulating layer 24 of the laminate 20. Thus, the intermediate layer 25 is formed to obtain the laminate 22 as shown in FIG.
[0023]
After that, the activated base layer 26 and the laminate 22 having the intermediate layer 25 formed on the insulating layer 24 of the laminate 20 are laminated and joined. The lamination bonding is achieved by cold-welding with the overlap-welding unit 60 by bringing the laminate 22 and the base layer 26 into contact with each other so that the surfaces to be joined face each other. At this time, the lamination bonding can be performed at a low temperature, and it is possible to reduce or eliminate adverse effects such as a change in structure and the formation of an alloy layer in the laminate 22, the base layer 26, and the bonding portion. When T is the temperature (° C.) of the stacked body 22 and the base layer 26, a good pressure contact state is obtained at 0 ° C. <T <300 ° C. A temperature of 0 ° C. or lower requires a special cooling device, and a temperature of 300 ° C. or higher is not preferable because adverse effects such as structural changes occur. More preferably, 0 ° C <T <200 ° C. More preferably, 0 ° C <T <150 ° C. Further, the rolling reduction R (%) is preferably 0.01% ≦ R ≦ 30%. If it is less than 0.01%, sufficient bonding strength cannot be obtained, and if it exceeds 30%, deformation becomes large, which is not preferable in terms of processing. More preferably, 0.1% ≦ R ≦ 3%. More preferably, 1% <R ≦ 3%.
[0024]
By laminating and joining in this manner, the base layer laminated material 30 having a required layer thickness can be formed, and is wound up by the take-up roll 66. If necessary, the base layer laminated material 30 as shown in FIG. 3 can be manufactured by cutting out to a predetermined size. The substrate layer laminate 30 manufactured in this manner may be subjected to a heat treatment within a range that does not cause a problem for removal or reduction of residual stress, if necessary, or a conductive film material such as solder plating. And the like may be laminated.
[0025]
Note that the laminate 20 shown in FIG. 1 can also be manufactured by using the method described above. That is, in FIG. 4, an insulating layer 24 is used in place of the laminated material 20, a conductive layer 23 is used in place of the base layer 26, and an intermediate layer of the same type as the conductive layer 23 is stacked on the insulating layer 24 by the film forming unit 90. Then, by laminating and joining with the conductive layer 23, it is possible to manufacture the laminated material 20 in which the conductive layer 23 composed of two conductor layers is laminated on the insulating layer 24. Similarly, a laminate 22 in which the conductive layer 23 and the intermediate layer 25 are respectively laminated on both surfaces of the insulating layer 24 shown in FIG. 2 can be manufactured by the above method.
[0026]
The film forming unit may be arranged not only on one activation processing device side as shown in FIG. 4 but also on both activation processing device sides as shown in FIG. 6 or as shown in FIG. It is also possible to arrange a plurality of film forming units. The film forming unit is preferably located near the activation processing apparatus. By arranging the film forming unit near the activation processing apparatus, it is possible to reduce the size of the manufacturing apparatus. For example, as shown in FIGS. 4 to 7, the electrode roll of the activation processing device and the electrode roll of the film forming unit are shared, or the electrode roll of the activation processing device and the film forming unit are shared. , Etc. on the outer periphery of the device. By adopting such a form, integrated processing becomes possible. Note that the vicinity means a range or a state in which the activated conductive plate surface is inactivated again by adsorption, reaction, or the like, and does not adversely affect the film formation.
[0027]
As shown in FIG. 2, the base layer laminate 30 is formed by laminating the conductive layer 23 and the intermediate layer 25 on both sides of the insulating layer 24, and the intermediate layer 25 side of the laminate 22 and the base layer 26 opposed thereto. Can be manufactured by activating each and bonding them. That is, in the above description, the laminate 22 shown in FIG. 2 is used in place of the laminate 20 shown in FIG. 1, and the film forming unit 90 of the manufacturing apparatus shown in FIG. Can be manufactured. The laminates 20 and 22 can be obtained by laminating the conductive layer 23 and the intermediate layer 25 on the insulating layer 24 using an appropriate method such as a dry film forming method.
[0028]
Batch processing can be used for the production of the base layer laminate. That is, a state in which a plurality of laminates and base layers cut in advance to a predetermined size in a vacuum chamber are loaded, conveyed to an activation treatment device, and faces to be processed at an appropriate position such as vertical or horizontal are opposed or juxtaposed. If the device for holding the laminated body or the base layer also serves as a pressure contact device, the device is placed or grasped and fixed to perform activation processing or film formation treatment if necessary. When the device for holding the laminated body and the base layer does not double as the press-contact device, it is achieved by carrying the press-contact device such as a press device to perform press-contact. Note that the activation treatment and the film formation treatment are preferably performed between the laminated body and the base layer as one electrode A that is insulated and supported, and the other electrode B that is grounded.
[0029]
The method of manufacturing a component according to the present invention is a method using a base layer laminated material obtained by laminating a base layer, an intermediate layer, an insulating layer, and a conductive layer. Parts that have been partially removed by etching or laser processing, or coated or fixed with a resin, or a polymer, metal, alloy, etc. And a substrate laminated on a substrate or a substrate, and a substrate subjected to interlayer conduction treatment or the like by via processing or through-hole processing. For example, it is a component 36 for a disk head or the like as shown in FIG. A component as shown in FIG. 8 includes a stainless steel foil such as SUS304 or SUS316 for the base layer 26, a liquid crystal polymer (LCP) for the insulating layer 24, and a stainless-copper-LCP-copper using copper for the conductive layer 23 and the intermediate layer 25. The laminated material having the four-layer structure described above is subjected to various etching processes such as plasma etching and manufactured by a subtractive method, and can be used as a suspension with a circuit for a disk head. In addition, since the flexible substrate can be partially formed by removing the base layer, the suspension and the transmission circuit can be integrally formed, and impedance matching which is indispensable for increasing the data transfer speed can be achieved. It will be easier. In addition, it is also possible to form a flying lead portion for electrical connection by removing the insulating layer and forming only the electrode. Further, an IC chip such as a magnetic detection element such as a GMR (Giant Magneto Resistive) element or an amplifier circuit can be mounted.
[0030]
In the base layer laminate and the component using the manufacturing method of the present invention, since the adhesive is not used for the insulating layer, the problem of deterioration of the heat resistance due to the adhesive or the like does not occur. In addition, since the insulating layer is formed in advance, the thickness can be kept uniform, the dielectric constant and the insulating property are stable, and unnecessary stress is not applied to the conductive layer, which is effective in improving the quality. Therefore, the base layer laminate and the component of the present invention are useful for disk head applications such as suspensions with circuits.
[0031]
【Example】
Hereinafter, embodiments will be described with reference to the drawings. An LCP film having a thickness of 10 μm was used as the insulating layer 24, and a rolled stainless steel foil having a thickness of 25 μm was used as the base layer 26. A laminate 20 in which a 5 μm-thick copper layer is laminated as a conductive layer 23 on the LCP film 24 by sputtering, and a rolled stainless steel foil 26 are set in a base layer laminate material manufacturing apparatus 50. At 80, activation treatment was performed by a sputter etching method. On the exposed side of the activated LCP film 24, a copper layer having a thickness of 0.1 μm is formed as an intermediate layer 25 by a film forming unit 90 using sputtering to form a laminate 22, and the activated rolled stainless steel foil 26 was pressed in a rolling unit 60 and laminated and joined to produce a substrate layer laminated material 30. Further, pattern etching was performed to manufacture the component 36.
[0032]
【The invention's effect】
As described above, the method for manufacturing a base layer laminate according to the present invention is a method in which a base layer, an intermediate layer, an insulating layer, and a conductive layer are sequentially stacked. This is the method used. Therefore, it is suitable for disk head applications and the like.
[Brief description of the drawings]
FIG. 1 is a schematic cross-sectional view showing one embodiment of a laminate used in a method for producing a base layer laminate of the present invention.
FIG. 2 is a schematic cross-sectional view showing another embodiment of the laminate used in the method for producing a base layer laminate of the present invention.
FIG. 3 is a schematic cross-sectional view showing one embodiment of a base layer laminate using the manufacturing method of the present invention.
FIG. 4 is a schematic cross-sectional view showing one embodiment of an apparatus used for the method of manufacturing a base layer laminate according to the present invention.
FIG. 5 is a schematic cross-sectional view showing one embodiment of a film forming unit used in the method of manufacturing a base layer laminate according to the present invention.
FIG. 6 is a schematic cross-sectional view showing another embodiment of the apparatus used in the method for producing a base layer laminate of the present invention.
FIG. 7 is a schematic cross-sectional view showing still another embodiment of the apparatus used for the method of manufacturing a base layer laminate according to the present invention.
FIG. 8 is a schematic cross-sectional view showing one embodiment of a component using the manufacturing method of the present invention.
[Explanation of symbols]
Reference Signs List 20 laminated body 22 laminated body 23 conductive layer 24 insulating layer 25 intermediate layer 26 base layer 30 base layer laminated material 36 component 50 base layer laminated material manufacturing apparatus 52 vacuum tank 54 vacuum pump 60 pressure contact unit 62 rewind reel 64 rewind reel 66 Take-up roll 70 Activation treatment device 72 Electrode roll 74 Electrode 76 Electrode 78 Electrode 80 Activation treatment device 82 Electrode roll 84 Electrode 86 Electrode 90 Film formation unit 91 Film formation unit 92 Target 94 Target electrode 95 Film formation unit 96 High frequency power supply 98 Magnet A Electrode A
B electrode B
C electrode C

Claims (3)

In a method of manufacturing a base layer laminated material in which a base layer, an intermediate layer, an insulating layer, and a conductive layer are sequentially laminated, at least one bonding surface of the base layer laminated material is subjected to activation treatment for each surface to be bonded. A method for producing a base layer laminated material, comprising: abutting, overlapping, and laminating and joining. In a method for manufacturing a base layer laminated material in which a base layer, an intermediate layer, an insulating layer, and a conductive layer are sequentially laminated, at least one surface of the base layer laminated material to be laminated is activated, and A method of manufacturing a base layer laminate material, comprising: stacking an intermediate layer on at least one of the surfaces to be laminated, and then abutting and overlapping the intermediate layer so that the intermediate layer is located between the base layer and the insulating layer. Method. A method for manufacturing a component, comprising using a base layer laminate formed by sequentially stacking a base layer, an intermediate layer, an insulating layer, and a conductive layer.

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