JP2004157127A - Manufacturing method for semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To allow inspection for characteristic about the semiconductor device requiring an operation test by a high speed signal, because of progress allowing high density and a narrow pitch to manufacture a semiconductor. <P>SOLUTION: A plurality of contact electrodes 21, 110b formed with implanted protrusion-like contact terminals 20, 110a coated with hard metal film using as a base a conductive thin film 41 formed on one side face of an insulation sheet 22 such as a polyimide film is arrayed in a connector for contacting electrically with a plurality of electrodes 3, 6 arrayed on an inspected object 1 to transmit and receive electric signals. A wiring sheet wherein leading-out wires 23, 110c connected electrically to the respective contact electrodes are formed using as a base the conductive thin film formed on the one side face of the insulation sheet such as the polyimide film or on the other side face reverse to the one side face, and tips of the contact terminals implanted to the contact electrodes are brought into contact with the respective electrodes of the inspected object, by imparting pressing force between the wiring sheet and the inspected object. <P>COPYRIGHT: (C)2004,JPO

Description

  The present invention relates to a connection device that transmits an electrical signal to an electrode through a contact terminal that is in contact with an electrode that is in contact with an object to be inspected, a method of manufacturing the same, and an inspection device and an inspection method using the same, The present invention relates to a connection device suitable for contacting a large number of high-density electrodes, a method for manufacturing the same, an inspection device, and a method for manufacturing a semiconductor element.

  The wafer 1 shown in FIG. 16A is provided with a large number of semiconductor elements (chips) 2 for LSI on its surface, and is separated and used for use. FIG. 16B is a perspective view showing one of the semiconductor elements 2 in an enlarged manner. A large number of electrodes 3 are arranged on the surface of the semiconductor element 2 along the periphery thereof.

  In order to industrially produce a large number of such semiconductor elements 2 and inspect their electrical performance, a connection device (prior art 1) having a structure as shown in FIGS. 17 and 18 is used. The prior art 1 includes a probe card 4 and a probe 5 formed of a tungsten needle that is inclined from the probe card 4. In the inspection using this connection device, a method is used in which the electrode 3 is rubbed with a contact pressure by a contact pressure utilizing the deflection of the probe 5 to make contact, and the electrical characteristics thereof are inspected.

  Japanese Patent Application Laid-Open No. Sho 64-71141 discloses an inspection method and an inspection apparatus capable of inspecting the characteristics of a semiconductor element when an operation test using a high-speed signal is required as the density and pitch of the semiconductor element further increase. There is known a technique described in Japanese Patent Application Laid-Open Publication (Prior Art 2). This prior art 2 uses a spring probe having a shape in which two movable pins urged by a spring so as to protrude in opposite directions are fitted into a tube so as to be able to come and go. In other words, the inspection is performed by bringing the movable pin on one end of the spring probe into contact with the electrode of the test object and the movable pin on the other end with the terminal provided on the substrate on the measurement circuit side. .

  As a conventional probe device (connection device), Japanese Patent Application Laid-Open No. 1-123157 (Prior Art 3) is known. That is, in the prior art 3, in a probe head that transmits an electric signal by contacting an electrode pad of a semiconductor LSI, an electrode pad row is formed on both surfaces, and the pads on both surfaces are electrically connected in a specific arrangement relationship. A multi-layer wiring board interconnected with the first multi-layer wiring board, and a base having a thick base and a fine flat portion at the end of which is fixedly mounted on each pad of the surface of the one multi-layer wiring board via a conductor layer. It is described as comprising a polygonal conical pin probe (formed by wet selective etching).

JP-A-64-71141

JP-A-1-123157

  By the way, in recent years, as the density of semiconductor elements has increased, the number of pins for inspection probes has increased, and the development of simple connection devices for transmitting electrical signals between the electrodes of semiconductor elements and inspection circuits has been developed. Is desired.

  By the way, in the probe card inspection method of the prior art 1 shown in FIG. 17 and FIG. 18, due to the shape of the probe 5, the concentrated inductance there is large and there is a limit to the inspection with a high-speed signal. That is, assuming that the characteristic impedance of the signal line on the probe card is R and the concentrated inductance of the probe is L, the time constant is L / R, and 1 ns when R = 50 ohm and L = 50 nH. , The waveform becomes dull and accurate inspection cannot be performed. Therefore, it is usually limited to direct current characteristic inspection. Further, in the above-described probing method, there is a limit in spatial arrangement of probes, and it is impossible to cope with an increase in the density of electrodes of a semiconductor element and an increase in the total number.

  Further, the method using the spring probe composed of two movable pins according to the prior art 2 can inspect high-speed electrical characteristics because the length of the probe is relatively short. However, the self-inductance is almost proportional to the bare probe length. Therefore, in the case of a probe having a diameter of 0.2 mm and a length of 10 mm, its inductance is about 9 nH. Crosstalk noise and ground level fluctuations (ground return current) that disturb the high-speed electrical signal are functions of the self-inductance and are substantially proportional to the bare probe length. For this reason, when a high-speed signal of several hundred MHz or more is used, a short probe of 10 mm or less is required. However, manufacturing such a spring probe is difficult and impractical.

  Further, in the prior art 3, since the protruding probe tip is usually formed by wet etching, the side etching effect is small, and it is difficult to efficiently manufacture the probe in a short time. Further, in the prior art 3, the softness is lost due to the formation of the protruding probe tip on the multilayer wiring board, and as a result, there is a possibility that the inspection object such as a semiconductor element may be damaged.

  As described above, in the prior art, the length of the probe is shortened so as to be able to cope with a high-speed signal of several hundred MHz or more, and it is configured with multiple pins per electrode to make sure connection with light load. The point and the point that it can be easily and efficiently manufactured have not been sufficiently considered.

  An object of the present invention is to solve the above-mentioned problems by providing a high-density and narrow-pitch electrode on an object to be inspected, which can be reliably connected with a light load to each of the arranged electrodes. The present invention provides a connection device and an inspection device capable of transmitting and receiving a high-speed signal of a high frequency of several hundred MHz or more by shortening the length of the connection device.

  Further, another object of the present invention is to form a high-density and narrow-pitch array on an object to be inspected, and to connect the electrodes formed by solder bumps reliably and stably with a light load. It is another object of the present invention to provide a connection device and an inspection device capable of transmitting and receiving a high-speed signal of a high frequency of several hundred MHz or more by shortening the length of a probe.

  Another object of the present invention is to enable reliable connection with a light load to each of the electrodes arranged at a high density and a narrow pitch on the inspection object, and furthermore, the length of the probe. It is an object of the present invention to provide a method of manufacturing a connection device capable of easily and efficiently manufacturing a connection device capable of transmitting and receiving a high-speed signal of a high frequency of several hundred MHz or more by shortening the length.

  Further, another object of the present invention is to provide a semiconductor device capable of manufacturing a semiconductor device by making it possible to perform a characteristic test on a semiconductor device which requires an operation test by a high-speed signal with a higher density and a narrower pitch. A method of manufacturing a device will be provided.

  In order to achieve the above object, the present invention is a connection device for transmitting and receiving an electric signal by electrically contacting a plurality of electrodes arranged on a test object, and corresponding to each of the electrodes. As described above, on one surface of the insulating sheet, a plurality of contact electrodes in which one or a plurality of projecting contact terminals are formed by etching are arranged, and lead wires electrically connected to the respective contact electrodes are formed. A wiring sheet formed on one surface of the insulating sheet or on the other surface opposite to the one surface, and applying a pressing force between the wiring sheet and the object to be inspected so that each of the contact Contact pressure applying means for bringing the tips of a plurality of protruding contact terminals formed on the electrodes into contact with the respective electrodes of the object to be inspected so as to establish electrical continuity between the lead-out wiring and the object to be inspected; Connection device characterized by having That.

  Further, the present invention is a connection device for transmitting and receiving an electric signal by being in electrical contact with a plurality of electrodes arranged on an object to be inspected, and a polyimide film or the like corresponding to each of the electrodes. Based on the conductive thin film formed on one surface of the insulating sheet, a plurality of contact electrodes in which projecting contact terminals are formed by etching are arranged, and a drawer electrically connected to each of the contact electrodes A wiring sheet formed based on a conductive thin film formed on one surface of the insulating sheet such as the polyimide film or the other surface opposite to the one surface; and a wiring sheet formed between the wiring sheet and the object to be inspected. By applying a pressing force between the object and the tip of the protruding contact terminal formed on each of the contact electrodes to contact each electrode of the object to be inspected, the lead-out wiring and the object to be inspected are Contact pressure that establishes electrical continuity between A connecting device which is characterized in that a given unit.

Further, the present invention is a connection device for transmitting and receiving an electric signal by being in electrical contact with a plurality of electrodes arranged on an object to be inspected, and a polyimide film or the like corresponding to each of the electrodes. On the basis of the conductor thin film formed on one surface of the insulating sheet and the conductor plating film plated thereon, a plurality of contact electrodes formed by etching protrusion-like contact terminals are arranged, and Wiring formed based on a conductive thin film formed on one surface or the other surface opposite to one surface of an insulating sheet such as the polyimide film, which is electrically connected to the contact electrode. Sheet, applying a pressing force between the wiring sheet and the object to be inspected so that the tips of the protruding contact terminals formed on the respective contact electrodes are brought into contact with the respective electrodes of the object to be inspected. The lead-out wiring and the object to be inspected A connecting device which is characterized in that a contact pressure applying means for making electrical conduction between the.

  Further, according to the present invention, in the connection device, solder bumps are formed on the electrodes arranged on the object to be inspected, and the protruding contact terminals formed on the contact electrodes are cut into the solder bumps to provide electrical connection. It is characterized by conducting.

  Further, the present invention is characterized in that a plurality of projecting contact terminals are formed for each contact electrode in the wiring sheet of the connection device.

  Further, the present invention is characterized in that, in the wiring sheet in the connection device, a conductive thin film is formed by bonding (sticking).

  Further, the invention is characterized in that in the wiring sheet in the connection device, the conductive thin film is a copper thin film in the wiring sheet.

  Further, the present invention is characterized in that, in the wiring sheet in the connection device, the conductor plating film is a Ni plating film.

  Further, the present invention is characterized in that, in the wiring sheet of the connection device, an element or a component for impedance adjustment is provided in the middle of the lead-out wiring.

  Further, the present invention is characterized in that, in the wiring sheet in the connection device, the protruding contact terminals are formed on each contact electrode by shower etching.

Further, the present invention is characterized in that, in the wiring sheet of the connection device, a protruding contact terminal is formed on each contact electrode by etching based on the conductor plating film.

Further, the present invention is characterized in that, in the wiring sheet of the connection device, a protruding contact terminal is formed on each contact electrode by local plating based on the conductor plating film.

Further, the present invention is characterized in that the wiring sheet in the connection device has a flat portion (with an area of about 7 to 100 μm ² ) at the tip of the protruding contact terminal.

  Further, the present invention is characterized in that, in the wiring sheet in the connection device, the contact electrode and the lead-out wiring are formed on the same surface of the insulating sheet.

  Further, the present invention is characterized in that, in the wiring sheet in the connection device, the lead wiring formed on the opposite surface of the contact electrode and the contact electrode are connected through a via formed in the insulating sheet.

  Further, the present invention is characterized in that in the wiring sheet in the connection device, the lead wiring is covered with a protective film.

  Further, the present invention is characterized in that, in the wiring sheet in the connection device, the contact terminals are covered with a hard metal film.

Further, the present invention provides a contact electrode in which one or a plurality of protruding contact terminals are formed on one surface of an insulating sheet by etching so as to correspond to each electrode arranged on the inspection object. And a lead-out line electrically connected to each contact electrode and covered with a protective film was formed on one surface of the insulating sheet or the other surface opposite to the one surface. A wiring sheet, positioning means for positioning the object to be inspected at least planarly with respect to the wiring sheet, and applying a pressing force between the wiring sheet and the object to be inspected positioned by the positioning means. A contact that makes the leading ends of the plurality of protruding contact terminals formed on each of the contact electrodes contact each electrode of the object to be inspected to establish electrical continuity between the lead-out wiring and the object to be inspected. Pressure applying means A tester electrically connected to a lead-out wiring drawn out to a peripheral portion of the wiring sheet, and configured to perform an inspection by transmitting and receiving an electric signal from the tester to the object to be inspected. An inspection apparatus characterized in that:

Further, the present invention provides a projecting contact terminal based on a conductor thin film formed on one surface of an insulating sheet such as a polyimide film so as to correspond to each electrode arranged on the inspection object. Arrange a plurality of contact electrodes formed by etching, electrically connected to each of the contact electrodes, and lead wiring covered with a protective film, one surface of the insulating sheet such as the polyimide film or the A wiring sheet formed based on a conductive thin film formed on the other surface opposite to the one surface, positioning means for positioning the object to be inspected at least in a plane with respect to the wiring sheet, and the positioning means Applying a pressing force between the wiring sheet and the object to be inspected positioned in the above, the tips of the projecting contact terminals formed on the respective contact electrodes are brought into contact with the respective electrodes of the object to be inspected. The drawer arrangement And a tester electrically connected to a lead-out wiring drawn out to a peripheral portion of the wiring sheet, and a tester electrically connected to the test object. An inspection apparatus characterized in that an inspection is performed by transmitting and receiving an electric signal to and from an object to be inspected.

Further, the present invention provides a conductive thin film formed on one surface of an insulating sheet such as a polyimide film and a conductive plating film plated on the conductive thin film so as to correspond to each electrode arranged on the inspection object. Based on the above, a plurality of contact electrodes in which projecting contact terminals are formed by etching are arranged, and lead wires electrically connected to the respective contact electrodes and covered with a protective film are formed on the polyimide film. A wiring sheet formed on the basis of a conductive thin film formed on one surface or the other surface opposite to the one surface of an insulating sheet, and the object to be inspected is at least planar with respect to the wiring sheet. Positioning means for automatically positioning, and applying a pressing force between the wiring sheet and the object to be inspected positioned by the positioning means, the tip of the protruding contact terminal formed on each of the contact electrodes, Inspection target A contact pressure applying unit that is brought into contact with each of the electrodes to establish electrical continuity between the lead-out wiring and the object to be inspected, and is electrically connected to the lead-out wiring drawn out to the peripheral portion of the wiring sheet. And a tester configured to perform an inspection by transmitting and receiving an electric signal from the tester to the object to be inspected.

  Further, the present invention is characterized in that the inspection device further includes a support member for supporting the wiring sheet.

  Further, the invention is characterized in that in the inspection device, the support member has a compliance mechanism.

  Further, the present invention is characterized in that in the inspection device, a buffer member is provided between the support member and the wiring sheet.

  The present invention also provides the inspection apparatus, further comprising a wiring board having a wiring connected to a lead wiring extending to a peripheral portion of the wiring sheet, wherein the wiring board is provided between the lead wiring and the tester. It is characterized in that it is configured to be connected via a.

  Further, according to the present invention, in the inspection apparatus, as a positioning means, a frame-like member (socket-like member) installed on the contact electrode side of the wiring sheet so as to allow an object to be inspected to be inserted at a fixed position with respect to the wiring sheet. (Member).

Further, the present invention is formed on one surface of an insulating sheet such as a polyimide film so as to correspond to each of the sample support portions supporting the inspection object and the electrodes arranged on the inspection object. On the basis of the conductive thin film, a plurality of contact electrodes in which projecting contact terminals are formed by etching are arranged, and the lead-out wiring electrically connected to each of the contact electrodes and covered with a protective film is formed of the polyimide. A wiring sheet formed based on a conductive thin film formed on one surface of the insulating sheet such as a film or the other surface opposite to the one surface, and pressing between the wiring sheet and the inspection object. By applying pressure, the tips of the protruding contact terminals formed on the respective contact electrodes are brought into contact with the respective electrodes of the object to be inspected, and electrical connection is established between the lead-out wiring and the object to be inspected. With contact pressure applying means 1 of the individual probe system even without a test apparatus characterized by comprising a tester for inspecting and is connected to the individual by Probe system.

  Further, the present invention is characterized in that, in the inspection apparatus, the individual probe system is mounted on a motherboard and connected to a tester via the motherboard.

  Further, the present invention is characterized in that in the inspection device, the formed contact terminal is covered with a hard metal film.

  The present invention also relates to a method for manufacturing a wiring sheet constituting a connection device for electrically contacting a plurality of electrodes arranged on an object to be inspected and transmitting and receiving an electric signal, wherein the insulating film (polyimide) A first manufacturing step of preparing a sheet having a conductive film formed on the surface of a film or the like, and a second step of patterning and forming a lead-out wiring on the conductive film of the sheet prepared in the first manufacturing step. A manufacturing process and connecting a portion corresponding to the electrode in the conductive film of the sheet prepared in the first manufacturing process to a lead-out wiring formed in the second manufacturing process; Forming one or more protruding contact terminals by etching the surface layer at a position corresponding to, and patterning the portion where the one or more protruding contact terminals are formed to form a contact electrode Third manufacturing A method of manufacturing a connection device and having and.

  The present invention also relates to a method for manufacturing a wiring sheet constituting a connection device for electrically contacting a plurality of electrodes arranged on an object to be inspected and transmitting and receiving an electric signal, wherein the insulating film (polyimide) A first manufacturing step of preparing a sheet having a conductive film formed on the surface of a film or the like, and a second step of patterning and forming a lead-out wiring on the conductive film of the sheet prepared in the first manufacturing step. A plating step, wherein a plating film is formed on the conductive film of the sheet prepared in the first manufacturing step, and a portion of the conductive film corresponding to the electrode is drawn out by the second manufacturing step. One or more protruding contact terminals were formed by connecting to wiring and etching a surface layer at a position corresponding to the electrode in the plating film to form one or more protruding contact terminals. Pattern the part A method of manufacturing a connection device and having a third manufacturing process for forming the electrode catalyst.

  Further, the present invention is characterized in that in the third manufacturing step in the method for manufacturing a connection device, the etching is shower etching.

  Further, the present invention is characterized in that, in the third manufacturing step of the method of manufacturing the connection device, a mask is formed with a dry film at the tip of the protruding contact terminal during etching.

  The present invention also relates to a method for manufacturing a wiring sheet constituting a connection device for transmitting and receiving an electric signal by making electrical contact with a plurality of electrodes arranged on an object to be inspected, the method comprising: A first manufacturing step of preparing a sheet having a conductive film formed thereon, and etching a surface layer at a position corresponding to the electrode in the conductive film of the sheet prepared in the first manufacturing step to form one or A second manufacturing step of forming a plurality of protruding contact terminals; and a lead wiring connected to the conductive film of the sheet prepared in the first manufacturing step and the lead wiring. And a third manufacturing step of patterning a contact electrode on which one or a plurality of projecting contact terminals are formed.

  Further, the present invention is characterized in that in the second manufacturing step in the method for manufacturing a connection device, the etching is shower etching.

  Further, the present invention is characterized in that in the second manufacturing step of the method of manufacturing the connection device, a mask is formed with a dry film at the tip of the protruding contact terminal when etching is performed.

  The present invention also relates to a method for manufacturing a wiring sheet constituting a connection device for transmitting and receiving an electric signal by making electrical contact with a plurality of electrodes arranged on an object to be inspected, the method comprising: A first manufacturing step of preparing a sheet having a conductive film formed thereon, a second manufacturing step of patterning and forming a lead wiring on the conductive film of the sheet prepared in the first manufacturing step, A portion corresponding to the electrode in the conductive film of the sheet prepared in the first manufacturing process is connected to a lead wire formed in the second manufacturing process, and a portion of the conductive film in a position corresponding to the electrode is formed. Patterning the portion, forming one or more protruding contact terminals by local plating on each of the patterned conductive film portions, and forming a contact electrode. Characteristic connection It is a method of manufacturing location.

  Further, the present invention is characterized in that the sheet prepared in the first manufacturing step in the method of manufacturing the connection device is formed of a polyimide film to which a copper foil is attached.

  Further, the present invention is characterized in that, in a third manufacturing step of the method of manufacturing the connection device, the surface of the formed one or more projecting contact terminals is covered with a hard metal film.

  Further, the present invention is characterized in that, in the third manufacturing step in the method of manufacturing the connection device, the plating film is a Ni plating film.

  Further, the present invention is characterized in that the local plating is local Ni plating in the third manufacturing step in the method of manufacturing the connection device.

  Further, the present invention is a connection device for making electrical contact with a contact object and transmitting and receiving an electric signal, wherein a plurality of contact terminals for making electrical contact with the contact object, A lead wire to be drawn out, wherein the contact terminal is constituted by a protrusion obtained by etching a surface layer of the conductive film, and the protrusion is connected to the lead wire through the remaining portion of the conductive film. Connection device.

  Further, the present invention is a method for manufacturing a connection device for transmitting and receiving an electric signal in electrical contact with a contact object, wherein the connection device is provided with a conductive film on one side of an insulating film surface formed on both surfaces. Forming a via conducting to the wiring and the opposite surface, and etching the conductive film on the opposite surface conducting to the lead-out wiring through the via to form a contact electrode on a contact object; Forming a protruding contact terminal by etching a surface layer of the contact electrode.

  Further, the invention is characterized in that the connection device further includes a wiring board provided with a wiring for transmitting and receiving an electric signal, and a lead-out wiring is connected to an electrode of the wiring board.

  Further, the present invention provides the connection device, further comprising a wiring board and a socket, wherein a lead wire drawn from a contact terminal of the connection device is joined to an electrode of the wiring board, and the contact terminal is connected to the socket. A semiconductor device inspection device connected to electrodes of a mounted semiconductor device is characterized.

  Further, the present invention is characterized in that a semiconductor element is manufactured by performing a characteristic inspection of the semiconductor element using the inspection apparatus.

  As described above, according to the configuration, a large number of fine and high-density contact terminals can be arranged with high accuracy, and as a result, it is possible to cope with a high-density inspection object. In addition, the length of the contact terminal can be made short (0.001 to 0.2 mm), and as a result, a stable operation test with a small voltage fluctuation that can be supplied over the entire surface of the semiconductor element can be realized. High-speed AC inspection is possible, and high-speed operation of semiconductor devices can be confirmed and output waveforms can be observed in detail, and characteristic margins of semiconductor devices can be grasped, enabling efficient feedback to semiconductor device design. It becomes.

  ADVANTAGE OF THE INVENTION According to this invention, it can connect to each electrode arrange | positioned on a to-be-inspected object reliably with a light load, and also shortens the length of a probe, and a high-speed signal of several hundred MHz or more high frequency There is an effect that it is possible to realize a connection device and an inspection device that can exchange the information.

  Further, according to the present invention, it is possible to securely and stably connect to each electrode formed of solder bumps with a light load, and to shorten the length of the probe. As a result, it is possible to realize a connection device and an inspection device capable of transmitting and receiving a high-speed signal of a high frequency of several hundred MHz or more.

  Further, according to the present invention, by forming the surface layer of the conductive film by etching, a large number of fine and high-density projecting contact terminals can be arranged with high accuracy. As a result, it is possible to cope with an increase in the density of the object to be inspected, and by making the length of the contact terminal short (about 0.001 to 0.2 mm), disturbance of a high-speed signal can be reduced. It works.

  Further, according to the present invention, the fine and high-density protruding contact terminals formed by etching the surface layer of the conductive film are used as the high-density multi-pin, narrow-pitch semiconductor element surface electrodes. Pin contact is possible, and as a result, it is possible to realize a test in a stable operation state with a small voltage fluctuation that can be supplied over the entire surface of the semiconductor element, thereby enabling a high-speed AC inspection. Can be observed in detail, and the characteristic margin of the semiconductor element can be grasped, so that there is an effect that efficient feedback to the design of the semiconductor element is possible.

Further, according to the present invention, side etching can be effectively performed by particularly performing shower etching on the surface layer of the conductive film, and as a result, a flat surface of several μm to 10 μm (area: 7 to 100 μm ² ) is formed at the tip. A plurality of protruding contact terminals having a reduced length (approximately 0.001 to 0.2 mm) having a portion can be planted and easily arranged with high precision. By bringing the pins and the surface electrodes of the semiconductor element having a narrow pitch into contact with all the pins, an effect that a test in a stable operating state with a small voltage fluctuation that can be supplied over the entire semiconductor element is achieved.

  Further, according to the present invention, by providing the buffer member, it is possible to absorb variations in the interval between the electrode and the contact terminal. In other words, by appropriately setting the material and thickness of the insulating sheet (insulating film) and the elastic modulus of the buffer layer, the contact terminal can be appropriately formed so as not to damage the electrode and the active element immediately below it during probing. Values can be easily set. Further, even if the electrode to be contacted has some steps, the electrode can be contacted with a predetermined force due to the bending of the insulating sheet and the elasticity of the cushioning member. The change of the contact electrode pattern can be easily handled only by changing the etching pattern.

  By using a material that can be used at a high temperature, such as polyimide, as a material of the insulating sheet, an operation test at a high temperature becomes possible, and when the object to be inspected is a silicon-based semiconductor element, the above-described contact terminal is formed. By fixing the insulating film to the silicon substrate, it is possible to realize a connection device in which displacement due to a difference in linear expansion coefficient is small.

  Therefore, it is possible to perform a high-speed operation test with high-density, ultra-high-number of pins for the electrodes of the semiconductor element to be in contact with the object to be contacted. Contact devices can be manufactured.

  In addition, the connection device according to the present invention is not limited to a semiconductor element, but can also be used as a contact device for opposing electrodes, and can be manufactured even with a narrow pitch and a large number of pins.

  Further, according to the present invention, it is possible to reliably connect the electrodes arranged on the object to be inspected with a light load, and to shorten the length of the probe to increase the frequency of several hundred MHz or more. There is an effect that a connection device that can exchange high-speed signals can be easily and efficiently manufactured.

  Further, according to the present invention, it is possible to manufacture a semiconductor device by making it possible to perform a characteristic test on a semiconductor device that requires an operation test using a high-speed signal, with a higher density and a narrower pitch.

  Embodiments of a connection device and a method of manufacturing the same, a contact terminal, an inspection device, and a method of manufacturing a semiconductor according to the present invention will be described with reference to the drawings.

  A connection device having a contact terminal according to the present invention is configured to electrically connect with electrodes formed on a large number of LSI semiconductor elements (chips) arranged in a substrate state (wafer state) to form a semiconductor element (chip). This is to check the electrical performance. By the way, as the density of semiconductor elements increases, the density of electrodes and the total number of electrodes increase, and electrical performance inspection using high-speed signals of several hundred MHz or higher has been required. Therefore, the connection device according to the present invention has a contact terminal capable of contacting a test object such as a high-density semiconductor element at multiple points and at a high density, and further has a probe length. This enables an electrical performance test using a high-speed signal of a high frequency of several hundred MHz or more as short as 10 mm or less.

  1 to 3 are schematic sectional views showing an embodiment of the connection device according to the present invention.

That is, FIG. 1 is a diagram showing a main part of a first embodiment of the connection device according to the present invention. The connecting device according to the first embodiment includes a contact electrode 21 in which a plurality of projecting tip portions 20 having a flat portion having a diameter of about several μm to 10 μm (area of about 7 to 100 μm ² ) are implanted. It comprises a polyimide film 22 formed on one surface, a lead-out wiring 23 formed on the other surface, and a plating film 24 that conducts the two. In the case of the first embodiment, as will be described later specifically, it is manufactured based on, for example, a polyimide film 22 having a copper thin film formed on both surfaces. When the protruding tip 20 is formed by etching, the thickness of the copper thin film formed on one surface is set to about 25 μm, and the thickness of the copper thin film formed on the other surface is set to be larger than the thickness (generally, about 18 μm). The protruding tip portion 20 is easily formed by etching. Naturally, the thickness of the copper thin film formed on both surfaces of the polyimide film 22 may be the same as about 18 μm or about 25 μm. However, if the thickness of the copper thin film is increased, it becomes difficult to bend, but this does not cause a problem.

FIG. 2 is a view showing a main part of a second embodiment of the connection device according to the present invention. In the connection device of the second embodiment, a contact electrode 26 in which a plurality of projecting tips 25 having a flat portion with a diameter of about several μm to 10 μm (area of about 7 to 100 μm ² ) is formed is formed. The surface and the surface on which the conductive plating film 27 is to be formed are formed on the same surface, and are provided with a lead-out wiring 28 on the opposite surface of the polyimide film 22. Also in the case of the second embodiment, as will be specifically described later, it is manufactured based on, for example, a polyimide film 22 having a copper thin film formed on both surfaces. Further, in the case of the second embodiment, since the protruding tip portion 25 is formed by etching the plating film 7 formed on the copper thin film so as to be connected to the extraction wiring 28, the polyimide film is formed. The thickness of the copper thin film formed on both surfaces of the substrate 22 can be reduced to a normal thickness of 18 μm.

  FIG. 3 is a diagram showing a main part of a third embodiment of the connection device according to the present invention. The connection device according to the third embodiment includes an electrode 32 in which a plurality of protruding tips 29 formed of a plating material 31 different from the material of the electrode base 30 are formed on the electrode base 30, and an opposite surface of the polyimide film 22. And a plating film 34 for conducting the two. Also in the case of the third embodiment, as will be described later in detail, it is manufactured based on, for example, a polyimide film 22 having a copper thin film formed on both sides. The thickness of the copper thin film may be the same on both surfaces, or may be thicker on the side where the protruding tip portion 29 is formed.

  In each of the first to third embodiments shown in FIGS. 1 to 3 described above, a plurality of minute projecting contact terminals 20, 25, and 29 are formed as one electrode by etching. At least, if an electrical connection with the electrode of the inspection object can be reliably established, only one electrode may be formed. However, if a plurality of minute projecting contact terminals 20, 25, and 29 are implanted as one electrode, it is possible to reliably electrically connect to the electrode of the inspection object. In particular, by forming a plurality of small projecting contact terminals 20, 25, and 29 as one electrode, even when a solder bump having an uneven tip is formed on the electrode as shown in FIG. By simply applying a contact pressure of 100 mN or less, which is significantly less than 300 mN per pin (one electrode), electrical connection can be reliably performed.

  In any of the first to third embodiments shown in FIGS. 1 to 3, for simplicity, only one cross section of the electrode 21 is shown, but of course, the electrode 21 is actually a polyimide as described later. A plurality is arranged on the film 22.

  As described above, in the first to third embodiments, specifically, as described later, the protruding tips 20, 25, and 29 are patterned by the photolithography technique. The accuracy is determined (within several μm). The protruding tip portions 20, 25, 29 can be formed in a protruding shape by, for example, shower etching. That is, if necessary, the shape can be a shape having a smaller sectional area toward the tip. These features are common in other embodiments.

  In particular, the reason why the contact terminals 20, 25, and 29 according to the present invention have a pointed tip is as follows.

In the case of an electrode in which an oxide film is formed on the surface of the electrode to be inspected or an uneven solder bump is formed, the resistance at the time of contact becomes unstable. When performing a characteristic inspection of a semiconductor element with respect to such an electrode, in order to obtain a stable resistance value in which the variation in resistance value at the time of contact is 0.5Ω or less, the tip of the contact terminal must be placed on the electrode surface. It is necessary to ensure good contact by breaking the surface of the oxide film and the like and the surface of the solder bump. For that purpose, for example, when the tip of the contact terminal is semicircular, it is necessary to rub each contact terminal against the electrode with a contact pressure of 300 mN or more per pin (one electrode). On the other hand, as described above, in the case of the contact terminals 20, 25, and 29 each having a shape having a flat portion whose tip has a diameter of about several μm to 10 μm, a contact pressure of 100 mN or less per pin (one electrode). If there is, it is possible to conduct electricity with stable contact resistance simply by pressing without rubbing against the electrode. As a result, it is sufficient to contact the electrode with a low stylus pressure, so that damage to the electrode or an element immediately below the electrode can be prevented. Also, the force required to apply pin pressure to all contact terminals can be reduced. As a result, the withstand load of the prober driving device in the test device using this connection device can be reduced, and the manufacturing cost can be reduced. Further, since only vertical pressing is performed, generation of electrode scraps caused by rubbing against the electrodes can be prevented, and contamination of the semiconductor element and short circuit between the electrodes can be prevented.

  Next, a manufacturing process for forming the first embodiment of the wiring sheet constituting the connection device according to the present invention shown in FIG. 1 will be described with reference to FIG. That is, FIG. 4 shows the manufacturing process for forming the first embodiment of the wiring sheet constituting the connection device shown in FIG. Are shown in the order of steps.

  First, the step shown in FIG. In this step, a polyimide film 22 having a copper thin film 40, 41 having a thickness of about 18 μm or about 25 μm on both sides is prepared, and the prepared copper thin films 40, 41 are formed on both sides of the polyimide film 22. On the other hand, a photoresist 42 is coated on the copper thin film 40, exposed and developed to form a resist pattern, and the resist pattern is used for etching to remove the copper thin film 40 at the via formation position 43 by etching. This is to remove the pattern. By increasing the thickness of the copper thin film 41 to about 25 μm, it becomes easy to perform shower etching shown in FIG. 4E, and the tip of the protruding contact terminal having a flat portion with a diameter of about several μm to 10 μm is obtained. The part 20 can be easily and accurately manufactured. The polyimide film 22 may be any flexible insulating sheet (insulating film). In addition, even when copper thin films 40 and 41 are formed on both sides and a polyimide film 22 is used as the polyimide film 22 and copper foil is attached to both sides of a flexible insulating sheet (insulating film), the copper thin film is formed by vapor deposition or plating. It may be a film.

  Next, the step shown in FIG. In this step, a part of the polyimide film 22 is removed by laser processing using the copper thin film 40 as a mask. As the laser 44, for example, a carbon dioxide laser may be used.

  Next, the step shown in FIG. In this step, a protective film 45 is formed on the copper thin film 41, and a copper plating 46 is formed on the wall surface of the hole where the polyimide film 22 at the via forming position 43 has been removed. In order to form the copper plating 46, the wall surfaces of the holes may be treated with a tin-palladium-based or carbon-graphite-based chemical.

  Next, the step shown in FIG. In this step, the copper thin film 40 and the copper plating film 46 are etched using the photoresist 47 to leave a pattern covered with the photoresist, and thereafter, the photoresist is removed to form the copper thin film 40 and the copper plating film 46. The lead wiring 23 is formed.

  Next, the step shown in FIG. In this step, the copper thin film is etched by using, for example, a circular photoresist mask 49 formed at the position where the tip end portion 20 of the contact terminal is formed, and one to a plurality of Of the contact terminal 20 of the protruding contact terminal. After the etching, the photoresist mask 49 is removed. As the etching method, for example, a shower etching 50 that sprays and etches an etching solution composed of, for example, a ferric chloride solution or a solution of ammonium persulfate + mercuric chloride, which can etch a copper thin film, is used. What is necessary is just to form the front-end | tip part 20 of a protruding contact terminal by promoting an etching effect. When the copper thin film 41 is etched, the copper thin film 41 is etched so as to leave the electrode 21 on which the tip portion 20 of the contact terminal is formed. Needless to say, the tip portion 20 of the contact terminal may be formed by etching the copper thin film 41 using a photoresist mask 49 having a square or arbitrary shape. Further, in this step, the size of the photoresist pattern is determined in advance in accordance with the amount of side etching by the shower etching 50, so that a flat portion having a diameter of about several μm to 10 μm is formed at the tip end 20 of the protruding contact terminal. Can be formed. As described above, a flat portion having a diameter of about several μm to 10 μm can be formed at one or a plurality of projecting contact terminal tips 20, so that a contact pressure of 100 mN or less per pin (one electrode) can be obtained. Even if an oxide film is formed on the electrode surface of the object to be inspected or an uneven solder bump (having a diameter of about 200 μm to 600 μm) is formed by simply pressing, it is possible to conduct electricity with stable contact resistance. Becomes possible. In addition, since the photoresist mask 49 is patterned by the photolithography technique, it is possible to form the position and the size of the tip portion 20 of the protruding contact terminal with high accuracy within about several μm. The photoresist mask 49 can be patterned by applying a photosensitive resist, exposing the applied photosensitive resist, and developing it. The photoresist mask 49 can be patterned by attaching a photosensitive resist (dry film resist) that has been made into a film in advance, exposing the applied dry film resist to light, and developing it.

  Next, the step shown in FIG. In this step, the electrode 21 is formed by etching the copper thin film 41 using the photoresist 51 and then removing the photoresist 51.

  Next, the step shown in FIG. In this step, a material 52 having high hardness, such as nickel, palladium, or rhodium, is applied to the surface of the electrode 21 to improve abrasion resistance and the bite of the inspection object into the electrode. The contact electrode 21 is formed by electroplating, electroless plating or the like with a thickness of about several μm. When the material 52 having high hardness is plated in this way, the extraction wiring 23 existing on the opposite surface is also plated and loses its softness. It is necessary to attach a tape such as polyimide to the surface.

  Through the respective steps shown in FIGS. 4A to 4G described above, the first embodiment of the wiring sheet constituting the connection device shown in FIG. 1 can be manufactured.

  Next, a manufacturing process for forming a second embodiment of the wiring sheet constituting the connection device according to the present invention shown in FIG. 2 will be described with reference to FIG. That is, FIG. 5 shows that, in the manufacturing process for forming the second embodiment of the wiring sheet constituting the connection device shown in FIG. 2, particularly, the tip portion 25 of the protruding contact terminal is formed by a plating film. Are shown in the order of steps.

  First, the step shown in FIG. In this step, as in FIG. 4A, a polyimide film 22 having copper thin films 40 and 41 having a normal thickness of about 18 μm or 25 μm formed on both sides is prepared, and the prepared copper thin films 40 and 41 are prepared. A photoresist pattern is formed by applying or attaching a photoresist 42 on a copper thin film 40 to a polyimide film (insulating sheet) 22 formed on both sides of the film, and performing exposure and development to form a resist pattern. Then, the copper thin film 40 at the via formation position 43 is removed by etching, and then the resist pattern is removed.

  Next, the step shown in FIG. In this step, a part of the polyimide film 22 is removed by laser processing using the copper thin film 41 as a mask. As the laser 44, for example, a carbon dioxide laser may be used.

  Next, the step shown in FIG. In this step, a protective film 45 is formed on the copper thin film 40, and a copper plating 46 having a thickness of about several μm to 20 μm is formed on the wall surface of the hole where the polyimide film 22 is removed at the via formation position 43 and on the copper thin film 41. To form. In order to form the copper plating 46, the wall surfaces of the holes may be treated with a tin-palladium-based or carbon-graphite-based chemical.

  Next, the step shown in FIG. In this step, a pattern covered with the photoresist 53 is left by etching the copper thin film 40 using the photoresist 53, and then the lead-out wiring 28 is formed by removing the photoresist 53.

  Next, the step shown in FIG. In this step, similarly to the step shown in FIG. 4E, a circular, square, or arbitrary-shaped photoresist mask 54 formed at a position where the tip 25 of the contact terminal is formed is formed on the copper thin film 41. By etching the copper plating 46 by shower etching 55 or the like, the tip portion 25 of one or a plurality of projecting contact terminals is formed using side etching of the copper plating 46. After the etching is completed, the photoresist 54 is removed. In this step, the size of the photoresist pattern is determined in advance in accordance with the amount of side etching by the shower etching 55 or the like, so that a flat portion having a diameter of about several μm to 10 μm is formed at the tip 25 of the protruding contact terminal. Can be formed. In this manner, a flat portion having a diameter of about several μm to 10 μm can be formed at the tip portion 25 of one or a plurality of projecting contact terminals, so that a small contact pressure of 100 mN or less per pin (one electrode). By simply pressing, even if an oxide film is formed on the electrode surface of the object to be inspected or an uneven solder bump (having a diameter of about 200 μm to 600 μm) is formed, current is supplied with stable contact resistance. It becomes possible. Further, since the photoresist 54 is patterned by the photolithography technique, the position and size of the tip 25 of the protruding contact terminal can be formed with high accuracy within about several μm.

  Next, the step shown in FIG. In this step, the electrode 26 is formed by etching the copper thin film 41 and the copper plating 46 thereon using the photoresist 56 and then removing the photoresist 51.

  Next, the step shown in FIG. In this step, a material 52 having high hardness, such as nickel, palladium, or rhodium, having a thickness of 0.3 μm or more is formed on the surface of the electrode 26 in order to improve abrasion resistance and biteability of the inspection object into the electrode. The contact electrode 25 is formed by plating with a thickness of about several μm by electroplating, electroless plating, or the like. When the material 52 having high hardness is plated in this way, the extraction wiring 28 existing on the opposite surface is also plated and loses its softness. It is necessary to attach a tape such as polyimide to the surface.

  Through the respective steps shown in FIGS. 5A to 5G described above, the second embodiment of the wiring sheet constituting the connection device shown in FIG. 2 can be manufactured.

  Next, a manufacturing process for forming a third embodiment of the wiring sheet constituting the connection device according to the present invention shown in FIG. 3 will be described with reference to FIG. That is, FIG. 6 shows, in the manufacturing process for forming the third embodiment of the wiring sheet constituting the connection device shown in FIG. 3, in particular, the tip portion 29 of the protruding contact terminal is formed by a plating film. Are shown in the order of steps.

  First, as shown in FIG. 6A, steps similar to those shown in FIGS. 4A to 4D are performed. This step is similar to the steps shown in FIGS. 4A to 4D. After forming the lead wiring 33 composed of the copper thin film 40 and the copper plating film 46, the photoresist 57 is The electrode base 30 is formed by etching the thin film 41.

  Next, the step shown in FIG. 6B is performed. In this step, a plating material 31 having a higher hardness than copper is plated on the surface of the electrode base 30 by electroplating with a thickness of about several μm to 20 μm. As the plating material 31, for example, nickel plating may be used. Also in this step, when the material 31 having a higher hardness than copper is plated, the extraction wiring 33 existing on the opposite surface is also plated and loses its softness. It is necessary to attach a tape such as polyimide to the surface of the wiring 33.

  Next, the step shown in FIG. In this step, the plating material 31 harder than copper is selectively etched by a predetermined amount by shower etching 59 or the like in which an etching solution suitable for nickel is sprayed in a shower shape using a photoresist 58, and thereafter, the photoresist 58 is removed, thereby removing one to a plurality of portions. In this case, the tip portions 29 of the protruding contact terminals are formed. In this step, the size of the photoresist pattern is determined in advance in accordance with the selective etching amount (isotropic etching amount) by the shower etching 59 or the like, so that the tip portion 29 of the projecting contact terminal has a diameter of several μm. A flat portion of about 10 to 10 μm can be formed. In this manner, a flat portion having a diameter of about several μm to 10 μm can be formed at the tip portion 29 of one or a plurality of projecting contact terminals, so that a small contact pressure of 100 mN or less per pin (one electrode). Even if an oxide film is formed on the surface of the electrode of the object to be inspected or an uneven solder bump (having a diameter of about 200 μm to 600 μm) is formed by simply pressing the On the other hand, current can be supplied with stable contact resistance. Further, since the photoresist 58 is patterned by the photolithography technique, it is possible to form the position and the size of the tip portion 29 of the protruding contact terminal with high accuracy within about several μm.

  Next, the step shown in FIG. In this step, nickel or palladium or rhodium is applied to the surface of the contact terminal tip 29 composed of the electrode base 30 and the plating material 31 in order to improve abrasion resistance and biting of the inspection object into the electrode. The contact electrode 32 is formed by plating a material 52 having high hardness with a thickness of about 0.3 μm to several μm by electroplating, electroless plating, or the like. When the material 52 having high hardness is plated in this manner, the extraction wiring 33 existing on the opposite surface is also plated and loses its softness. It is necessary to attach a tape such as polyimide to the surface.

  Incidentally, it is not always necessary to execute the step shown in FIG. This is because even the tip end portion 29 of the contact terminal made of a plating material 31 such as nickel has sufficient wear resistance and the ability of the test object to penetrate the electrode.

  The third embodiment of the wiring sheet constituting the connection device shown in FIG. 3 through the respective steps shown in FIGS. 4 (a) to 4 (d) and FIGS. 6 (a) to 6 (d) described above. Can be manufactured. In the case of this manufacturing process, since the plating material 31 such as nickel is formed on the copper thin film 30, even if a thin copper thin film 30 of, for example, about 18 μm is used, one or more projecting contact terminals are used. Can be easily and accurately manufactured.

  Next, a manufacturing process for forming another embodiment of the wiring sheet constituting the connection device according to the present invention will be described with reference to FIG. FIG. 7 shows another embodiment of the manufacturing process for forming the tip of the protruding contact terminal into a thin film in the order of steps.

  First, a process similar to the process shown in FIGS. 4A to 4D as shown in FIG. 7A (also the same as FIG. 6A) is executed. In this step, after the wiring 33 composed of the copper thin film 40 and the copper plating film 46 is formed, the copper thin film 41 is etched using the photoresist 57 to form the electrode base 30.

  Next, the process shown in FIG. 7B similar to FIG. 6B is performed. In this step, a plating material 31 having a higher hardness than copper is plated on the surface of the electrode base 30 by electroplating or the like. As the plating material 31, for example, nickel plating may be used.

  Next, the step shown in FIG. 7C is performed. In this step, one or more circles made of the plating material 31 are formed by selectively etching the plating material 31 using a circular photoresist mask 60 (a method of limiting the material and etching only the material). This forms the tip 61 of the columnar contact terminal. Needless to say, the tip portion 61 of the prismatic contact terminal may be formed by selective etching using a photoresist mask 60 having a square or arbitrary shape. After the etching is completed, the photoresist mask 60 is removed. Also in this step, by determining the size of the photoresist pattern, a flat portion having a diameter of about several μm to 10 μm can be formed at the tip 61 of the protruding contact terminal. As described above, since a flat portion having a diameter of about several μm to 10 μm can be formed at the distal end portion 61 of one or a plurality of projecting contact terminals, only a small contact pressure per pin (one electrode) is applied. Even if an oxide film is formed on the surface of the electrode of the inspection object or an uneven solder bump (having a diameter of about 200 μm to 600 μm) is formed, stable contact with the electrode of the inspection object can be achieved. It becomes possible to energize by resistance. Further, since the photoresist 60 is patterned by the photolithography technique, the position and the size of the tip 61 of the protruding contact terminal can be formed with high accuracy within about several μm.

  Next, the step shown in FIG. 7D is performed. In this step, nickel or palladium or rhodium is added to the surface of the contact terminal tip 61 and the electrode base 30 made of the plating material 31 in order to improve abrasion resistance and penetration of the inspection object into the electrode. The electrode 52 for contact is formed by plating a material 52 having high hardness with a thickness of about 0.3 μm to several μm by electroplating, electroless plating, or the like. When the material 52 having high hardness is plated in this manner, the extraction wiring 33 existing on the opposite surface is also plated and loses its softness. It is necessary to attach a tape such as polyimide to the surface.

Incidentally, the step shown in FIG. 7D may be omitted. This is because the distal end portion 61 of the contact terminal made of the plating material 31 such as nickel has sufficient abrasion resistance and the bite of the inspection object into the electrode.

  Through the respective steps shown in FIGS. 4A to 4D and FIGS. 7A to 7D described above, a connection device different from that of the third embodiment can be manufactured. The manufacturing process of this embodiment is different from the manufacturing process shown in FIG. 6 in the method of etching the plating material 31 such as nickel. By the manufacturing process (selective etching) of this embodiment, a columnar 61 can be formed as the protruding contact terminal, and as a result, the area accuracy of the flat portion can be improved and one or more columnar contact terminals can be formed. 61 can be formed on the electrode 62 with high density.

  Next, a manufacturing process for forming another embodiment of the wiring sheet constituting the connection device according to the present invention will be described with reference to FIG. FIG. 8 shows another embodiment of the manufacturing process for forming the tip of the protruding contact end into a thin film in the order of steps.

  First, a lead wire 33 composed of a copper thin film 40 and a copper plating film 46 is formed in a process similar to the process shown in FIGS. Next, as shown in FIG. 8A, a hole is formed on the surface of the copper thin film 41 using a photoresist 63 at a position where the tip of the contact terminal is formed, and a plating material having a hardness higher than that of copper is formed in the hole. One or more columnar contact terminals 68 can be formed by plating the electrode 64 by electroplating or the like and removing the photoresist 63. As the plating material 64, for example, nickel plating may be used. Note that a protective film 65 is formed on the surface of the wiring 33 as necessary.

  Next, as shown in FIG. 8B, after removing the photoresist 63 and the protective film 65, the copper thin film 41 is etched using the photoresist 66, and the photoresist 66 is removed, thereby forming one or a plurality of pillars. The electrode 67 on which the contact terminal 68 is formed can be formed.

  Next, similarly to FIG. 7D, as shown in FIG. 8C, the tip 68 of the contact terminal made of the plating material 64 and the surface of the electrode 67 have a hardness of palladium, rhodium, or iridium. The tall material 52 is plated to form the contact electrodes 69.

  Through the respective steps shown in FIGS. 4 (a) to 4 (d) and FIGS. 8 (a) to 8 (c) described above, a wiring sheet constituting a connection device different from the third embodiment is manufactured. be able to. In the manufacturing process of this embodiment, one or a plurality of holes are formed at positions where the tips of the contact terminals are formed on the photoresist 63, and the holes are plated to form the electrodes on the copper thin film 67 constituting the electrodes. One or more columnar contact terminals 68 can be formed, and as a result, one or more columnar contact terminals 68 can be formed on the electrode 67 with high density by improving the area accuracy of the flat portion. Becomes possible.

  4 to 8 illustrate the case where the formation position of the copper plating 46 for forming the via and the formation position of the tip portions 21, 29, 61, 68 of the contact terminals are shifted from each other. However, it goes without saying that, for example, as shown in FIGS. 9A to 9D, the copper plating 46 for forming a via may be formed at the same position.

  In each of the embodiments shown in FIGS. 4 to 8, a copper electrode 46 for forming a via is formed, a copper thin film on both surfaces of the polyimide film 22 is formed, and a contact electrode is formed on one surface to form a tip of a contact terminal. As the other surface, the method used as the lead-out wiring has been described. However, the contact electrode and the lead-out wiring in which the tip of the contact terminal is formed using only the copper thin film on one side of the polyimide film 22 are formed. Needless to say, this may be done. In this case, the contact electrode on which the contact terminal is formed and the lead-out wiring are formed on the same surface.

  Next, an embodiment of a manufacturing process for manufacturing a connection device in which a contact electrode on which a contact terminal is formed and a lead wiring are formed on the same surface will be described with reference to FIGS.

  FIG. 10 is a diagram showing, in the order of steps, one embodiment of a manufacturing process for manufacturing a connection device in which a contact electrode on which a contact terminal is formed and a lead wiring are formed on the same surface. First, as shown in FIG. 10A, the tip portion 20 of the protruding contact terminal is formed by etching the copper thin film 41 using a photoresist 70 by shower etching 71 or the like. Next, as shown in FIG. 10B, the electrode 21 and the lead-out wiring 73 are formed by etching the copper thin film 41 using a photoresist 72. Next, as shown in FIG. 10C, a material 52 having high hardness such as nickel, palladium, or rhodium is plated on the surface of the electrode 21 to form an electrode 74 for contact. As described above, the electrode 21 on which one or a plurality of protruding contact terminals 20 are formed and the lead wiring 73 connected to the electrode can be formed on the same surface. When the electrode 21 and the lead-out wiring 73 are formed on the same surface, a ground layer (grounding layer) 40 in which a copper thin film or the like is patterned on the opposite surface so as to face the lead-out wiring 73 with the polyimide film 22 interposed therebetween. Can be provided.

  11A to 11C, similarly to the manufacturing process shown in FIG. 10, the copper plating process for forming a via is omitted, and the copper thin film 41 is formed by the manufacturing process shown in FIGS. Next, an example in which a contact electrode and a lead wiring are formed is shown.

  In the embodiment shown in FIGS. 10 and 11, when the copper thin film 40 for grounding is unnecessary, a polyimide film attached on one side may be used.

  Next, with reference to FIG. 12, an embodiment of the inspection apparatus using the connection device in which the minute projection-like contact terminals (20, 25, 29, 61, 68) according to the present invention described above are formed in a thin film. explain. FIG. 12 is an explanatory diagram showing a main part of an embodiment of the inspection apparatus according to the present invention.

  In this embodiment, the inspection device is configured as a prober for bare chips of semiconductor elements. The inspection apparatus includes a sample support system 100 that positions and presses an object to be inspected, a connection device 110 that contacts an object to be inspected to transmit and receive an electric signal, and a tester 170 that performs measurement. . It should be noted that the semiconductor device (chip) 2 is an object to be inspected. On the surface of the semiconductor element 2, a plurality of electrodes 3 as external electrodes are arranged and formed. In this embodiment, a solder bump 6 is formed on each of the electrodes 3.

  The semiconductor element 2 is removably mounted on the sample support system 100. By placing the semiconductor element 2 in the frame 101, the position of the semiconductor element 2 is positioned at a predetermined position, and the upper lid 104 is placed on the frame 101 via a pressing force applying means 102 such as a spring or an elastic body and a pressing plate 103. , The solder bumps 6 formed on the electrodes of the semiconductor element 2 are applied to the contact terminals 110a (20, 25, 29, 61, 68) having the protruding tips of the connection device described above. Make pressure contact. The contact terminal 110a is formed on the surface of the contact electrode 110b (21, 26, 30, 32, 67, 74), and is provided on the wiring board 117 through the lead wiring 110c (23, 28, 33). The electrode 117a is connected to the electrode 117a by solder 99, and the connection electrode 117a is connected to the tester 170 not shown in this embodiment through the internal wiring 117b. The wiring board 117 serves as a support member (a holding member for holding) that supports the wiring sheet 110d included in the connection device 110. The wiring sheet 110d constituting the connection device 110 includes a polyimide film (insulating sheet) 22 having an insulating property, and a plurality of wirings arranged on the polyimide film 22 so as to correspond to the electrodes 3 and 6 of the semiconductor element 2. It is composed of a contact electrode 110b on which minute contact terminals 110a are formed, and a lead wiring 110c connected to the electrode 110b.

  If necessary, a buffer member 118 such as a silicone sheet may be provided immediately below the wiring sheet 110d on which the contact terminals 110a and the lead-out wiring 110c of the connection device 110 are formed to soften the impact, and the semiconductor element 2 or the semiconductor element is softened. Damage to the formed substrate can be prevented. Further, an element or a component 119 such as a resistance or a capacitor for impedance adjustment may be provided in the middle of the lead-out wiring 110c to transmit a signal without any trouble. Further, by providing a ground layer (ground layer) such as a copper thin film on the surface of the polyimide film (insulating sheet) 22 facing the lead wiring 110c, the line width of the lead wiring 110c or the thickness of the polyimide film can be changed. This makes it possible to adjust the impedance and also to prevent generation of noise.

  As described above, by simply pressing the semiconductor element 2 with a low load (a pressing force smaller than 100 mN per electrode) by the pressing force applying means 102, the electrodes 110b ( 21, 26, 30, 32, 67, 74) are connected to the plurality of minute contact terminals 110a (20, 25, 29, 61, 68) formed on the respective electrodes arranged on the semiconductor element 2 by soldering. By making the pump 110a bite, electrical connection can be reliably performed. Further, since the length of the plurality of minute contact terminals 110a (20, 25, 29, 61, 68) formed on the connection device 110 can be reduced to about 0.001 mm to 0.2 mm, several hundred MHz or more High-speed signal transmission is also possible. By the way, when the diameter of the solder bump 6 is about 200 to 600 μm, the number of the minute contact terminals 110a (20, 25, 29, 61, 68) formed per electrode is shown in FIGS. As described above, it is possible to set it to about 5 to 7.

  Next, another embodiment of the inspection device using the connection device composed of a wiring sheet formed of a thin projection-shaped contact terminal (20, 25, 29, 61, 68) according to the present invention will be described. This will be described with reference to FIG. FIG. 13 is an explanatory view showing a main part of another embodiment of the inspection apparatus according to the present invention.

  In the present embodiment, the inspection device is configured as a wafer prober in manufacturing a semiconductor device. The inspection apparatus includes a sample support system 140 for supporting an object to be inspected, a probe system 120 for transmitting and receiving an electric signal in contact with the object to be inspected, and a drive control system 150 for controlling the operation of the sample support system 140. And a tester 170 for performing measurement. It should be noted that the inspection object is an individual semiconductor element (chip) 2 on the wafer 1. A plurality of electrodes 3 as external electrodes are formed on the surface of the semiconductor element 2.

The sample support system 140 includes a substantially horizontally provided sample stage 142 on which the wafer 1 is detachably mounted, a vertically arranged elevating shaft 144 supporting the sample stage 142, and a vertically elevating shaft 144. And an XY stage 147 that supports the elevation drive unit 145. The XY stage 147 is fixed to the body 146. The elevation drive unit 145 includes, for example, a stepping motor. By combining the moving operation of the XY stage 147 in the horizontal plane and the vertical movement by the elevation drive unit 145, the positioning operation of the sample table 142 in the horizontal and vertical directions is performed. Further, the sample table 142 is provided with a rotation mechanism (not shown) so that the sample table 142 can be rotationally displaced in a horizontal plane.

  A probe system 120 is arranged above the sample table 142 so as to face the wafer 1. That is, the contact electrode 123 and the wiring substrate 127 having one or a plurality of projecting contact terminals 123a formed in a posture facing the sample table 142 in parallel are provided. The wiring sheets 121 constituting the connection device are arranged corresponding to the respective electrodes 3, and the contacting electrodes 123 (21, 21) having one or a plurality of minute contact terminals 123 a (20, 25, 29, 61, 68) are formed. , 26, 30, 32, 67, 74) formed on a wiring sheet 121 formed on an insulating sheet 22 such as a polyimide film, and the above-mentioned electrodes 123 (21, 26, 30, 32, 67, 74) are formed. 74), and is connected to the connection electrode 127a of the wiring board 127 from the lead-out wiring 122 (23, 28, 33) drawn out to the peripheral portion of the insulating sheet 22. A polyimide protective film 124 is formed on the back surface of the wiring sheet 121 including the lead wires 122 (23, 28, 33), and a pressing plate 125 is provided on the protective film 124 with a buffer member (buffer layer) 126 such as silicone rubber. The pressing plate (serving as a supporting member) 125 is bonded to the center pivot 128 and the spring probe 129 so that the pressing plate 125 can be freely displaced so as to constitute a compliance mechanism (follow-up follow-up mechanism). Is fixed to the wiring board 127 via the board 130 to which the is fixed. Each contact terminal 123 (21, 26) formed by the electrode (21, 26, 30, 32, 67, 74) on which one or a plurality of minute contact terminals (20, 25, 29, 61, 68) are formed. , 30, 32, 67, 74) are connected to the connection electrodes 127a provided on the wiring board 127 through the lead wiring 122, and are connected to the connection terminals 127c through the internal wiring 127b. Further, by providing a ground layer (ground layer) on the surface of the polyimide film (insulating sheet) 22 facing the lead-out wiring 122, the impedance can be adjusted by changing the line width of the lead-out wiring 122 or the thickness of the polyimide film. It is possible, and the occurrence of noise can be prevented.

  Above the sample table 142, a probe system 120 is arranged. That is, the contact electrode 123 and the wiring board 127 having the contact terminals 123a (21, 26, 30, 32, 67, 74) formed in a posture facing the sample table 142 in parallel are provided. The contact electrode 123 on which one or more contact terminals 123a (21, 26, 30, 32, 67, 74) are formed is provided on the wiring board 127 through the lead-out wiring 122 (23, 28, 33). It is connected to the connection electrode 127a. The connection electrode 127a is connected to the tester 170 via a cable 171 connected to the connection terminal 127c through the internal wiring 127b.

  The drive control system 150 is connected to the tester 170 via a cable 172. Further, the drive control system 150 sends a control signal to the actuator of each drive unit of the sample support system 140 to control the operation. That is, the drive control system 150 includes a computer therein and controls the operation of the sample support system 140 in accordance with the progress information of the test operation of the tester 170 transmitted via the cable 172. Further, the drive control system 150 includes an operation unit 151, and receives input of various instructions related to drive control, for example, receives an instruction of a manual operation.

  Hereinafter, the operation of the inspection apparatus of the present embodiment will be described. The wafer 1 is fixed on the sample table 142, and the electrodes 3 formed on the semiconductor elements 2 of the wafer 1 are brought into contact with the probe system 120 using an XY stage (positioning means) 147 and a rotating mechanism. Positioning just below the contact electrode 123 [the contact electrode 123 (21, 26, 30, 32, 67, 74) on which one or more minute contact terminals 123a (20, 25, 29, 61, 68) are formed]. I do. Thereafter, the elevation drive unit 145 of the drive control system 150 is operated to raise the sample table 142 to a predetermined height, thereby causing the plurality of contact electrodes 123 (21, 26, 30, 32, 67, 74) to move. Each tip 123a (micro contact terminals (20, 25, 29, 61, 68)) is brought into contact with each of the plurality of electrodes 3 of the target semiconductor element 2 at a predetermined pressure. In this state, transmission and reception of operation power, an operation test signal, and the like are performed between the semiconductor element 2 of the wafer 1 and the tester 170 via the cable 171, the connection terminal 127c, the internal wiring 127b, the lead-out wiring 122, and the contact terminal 123. Then, it is determined whether or not the operation characteristics of the semiconductor element are applicable. The above-described series of operations is performed for each of the plurality of semiconductor elements 2 formed on the wafer 1 to determine whether or not the operation characteristics are acceptable.

  Next, another embodiment of the semiconductor device inspection apparatus using the connection device composed of the wiring sheet in which the projecting contact terminals (20, 25, 29, 61, 68) according to the present invention are formed in a thin film. An example will be described with reference to FIGS.

  FIG. 14 is a perspective view showing an essential part of one embodiment of a semiconductor element characteristic inspection apparatus using a connection device having a projecting contact terminal formed in a thin film according to the present invention, and FIG. 15 is a semiconductor device shown in FIG. It is sectional drawing of an element inspection apparatus.

  This embodiment is configured as a wafer prober for applying a test electric signal to a semiconductor element and performing a characteristic test of the semiconductor element. This embodiment is an embodiment in which the characteristic inspection of a plurality of wafers 1 is collectively performed. That is, in this embodiment, as shown in FIG. 15, a motherboard 181 is mounted vertically to the support 190, and a plurality of individual probes are mounted to the motherboard 181 vertically to the support 190, that is, parallel to the support 190. And a system 180.

  The motherboard 181 has a connector 183 provided for each individual probe system 180 and a cable 182 communicating with the connector 183 via the motherboard 181. Although not shown in the present embodiment, the cable 182 is connected to a tester similar to the tester 170 shown in FIG.

  The individual probe system 180 is provided for each inspection object. The individual probe system 180 includes a connection device 200a according to the present invention, a wiring substrate 207 to which the connection device 200a is fixed, a wafer support substrate 185 for supporting the wafer 1 to be inspected, and the wafer support substrate 185. Are mounted, a support board 184 for attaching the individual probe system itself to the motherboard 181, and a pressing plate (a wiring sheet 121 similar to the wiring board 117 shown in FIG. 186).

Each part above the wafer support substrate 185 has the structure shown in FIG. That is, the wafer support substrate 185 is formed of, for example, a metal plate, and has a concave portion 185a for detachably housing the wafer 1 and a knock pin 187 for positioning.

  The wiring sheet 200a constituting the connection device includes an insulating film 204 (22) and a group of contact electrodes 203 provided thereon [one or a plurality of minute contact terminals 203a (20, 25, 29, 61, 68). ) Formed with a contact electrode 203 (21, 26, 30, 32, 67, 74), a buffer member (buffer layer) 208, and a substrate 209. A wiring sheet 200a constituting this connection device is mounted on a wiring board 207, and each of the contact electrodes 203 [a contact for forming one or a plurality of minute contact terminals 203a (20, 25, 29, 61, 68)]. The wiring (23, 28, 33) drawn from the electrode 203 (21, 26, 30, 32, 67, 74)] is connected to the connector terminal 207c via the wiring 207d. The connector terminal 207c fits with the connector 183.

  A holding plate 186 is mounted above the wiring sheet 200a constituting this connection device. The pressing plate 186 is formed in a channel shape, and the wiring board 207 is accommodated in the channel 186a. Further, a hole 188 for fitting with the knock pin (positioning means) 187 is provided in a peripheral portion of the pressing plate 186.

  Next, the measurement operation of this embodiment will be described with reference to FIG.

  The mounting substrate on which the wafer 1 is mounted is fixed to the concave portion 185a of the wafer support substrate 185, and the respective electrodes 3 formed on the wafer 1 are connected to the respective contact terminals 203 [formed on the connection device 200a using the knock pins 187. One or a plurality of minute contact terminals (20, 25, 29, 61, 68) are formed immediately below the electrodes (21, 26, 30, 32, 67, 74) on which the contact terminals are formed. Each of the target electrodes 3 is brought into contact with a predetermined pressure. In this state, the cable 182, the mother board 181, the connector 183, the wiring board 207, the lead-out wiring (23, 28, 33) provided on the insulating sheet (insulating film) 204 (22), and the contact terminal 203 Then, an operation power, an operation test signal, and the like are transmitted and received between the semiconductor element formed on the wafer 1 and the tester, and whether or not the semiconductor element has an operation characteristic is determined. The above series of operations is performed for each of the wafers 1 to determine whether or not the operation characteristics are acceptable.

  Note that the device shown in FIG. 15 may be used as a burn-in inspection device that performs a characteristic inspection of a semiconductor element by applying electricity and temperature stress in a high temperature state in a thermostat. It goes without saying that the individual probe system shown in FIG. 15 may be connected to a tester as a single product and used as a semiconductor device inspection device. At this time, if the insulating sheet is made of a polyimide film, it can sufficiently withstand high temperatures.

1A and 1B are diagrams showing a main part of a first embodiment of a wiring sheet constituting a connection device according to the present invention, wherein FIG. 1A is a cross-sectional view and FIG. FIG. 6 is a diagram showing a main part of a second embodiment of a wiring sheet constituting a connection device according to the present invention, wherein (a) is a cross-sectional view and (b) is a plan view. FIG. 8 is a view showing a main part of a third embodiment of a wiring sheet constituting a connection device according to the present invention, wherein (a) is a cross-sectional view and (b) is a plan view. FIG. 4 is a cross-sectional view showing a part of the steps of one embodiment of a manufacturing process for manufacturing the first embodiment of the wiring sheet constituting the connection device according to the present invention. FIG. 7 is a cross-sectional view illustrating a part of the steps of an embodiment of a manufacturing process for manufacturing a second embodiment of the wiring sheet constituting the connection device according to the present invention. FIG. 8 is a cross-sectional view illustrating a part of the steps of an embodiment of a manufacturing process for manufacturing a third embodiment of a wiring sheet included in the connection device according to the present invention. It is sectional drawing which shows a part of process of one Example of the manufacturing process for manufacturing another Example of the wiring sheet which comprises the connection apparatus which concerns on this invention. It is sectional drawing which shows a part of process of one Example of the manufacturing process for manufacturing another Example of the wiring sheet which comprises the connection apparatus which concerns on this invention. It is sectional drawing which shows a part of process of one Example of the manufacturing process for manufacturing the Example which connects with the extraction wiring in the same position as the contact electrode in the wiring sheet which comprises the connection apparatus which concerns on this invention. It is sectional drawing which shows a part of process of one Example of the manufacturing process for manufacturing the Example which formed the contact electrode and the lead-out wiring on the same surface in the wiring sheet which comprises the connection apparatus which concerns on this invention. It is sectional drawing which shows the principal part of the Example which formed the contact electrode and the lead-out wiring on the same surface in the wiring sheet which comprises the connection apparatus which concerns on this invention. 1 is a cross-sectional view illustrating a main part of a first embodiment of a semiconductor device inspection apparatus according to the present invention. FIG. 6 is a cross-sectional view illustrating a main part of a second embodiment of the semiconductor device inspection apparatus according to the present invention. FIG. 2 is a perspective view showing a main part of an individual probe of the semiconductor device inspection apparatus according to the present invention. FIG. 15 is a cross-sectional view illustrating an embodiment of a semiconductor device inspection apparatus using the individual probe illustrated in FIG. 14. FIG. 2 is a perspective view showing a wafer and semiconductor elements according to the present invention. It is sectional drawing which shows the conventional test probe. It is a top view which shows the conventional test probe.

Explanation of reference numerals

  DESCRIPTION OF SYMBOLS 1 ... Wafer, 2 ... Semiconductor element, 3 ... Electrode, 6 ... Solder bump, 20, 25, 29, 61, 68, 110a, 123a, 203a ... Protruding contact terminal (protruding tip part), 21, 26 , 32, 62, 67, 69, 74, 110b, 123, 203 ... contact electrodes, 22, 204 ... polyimide film (insulating sheet), 23, 28, 33, 73, 110c, 122 ... lead-out wiring, 24, 27, 34: plating film, 30: electrode base, 31: plating material, 40, 41: copper thin film, 42, 47, 49, 51, 53, 54, 56, 57, 58, 60, 63, 70, 72 ... Photoresist, 42: Via formation position, 44: Laser, 45, 65: Protective film, 46: Copper plating, 47: Photoresist, 49: Photoresist, 50, 55, 59, 71: Shower etching, 52, 4: High hardness material 100: Sample support system, 101: Frame (socket frame) (positioning means), 102: Spring (pressing force applying means), 103: Pressing plate, 104: Top lid, 110: Connecting device, 110d , 121, 200a: wiring sheet, 117, 127: wiring board, 117a, 127a: connection electrode, 117b, 127b: internal wiring, 118, 126: buffer member, 119: element or component, 120: probe system, 124: protection Membrane 125, holding plate 126, buffer member 127 wiring board 127c connection terminal 128 center pivot 129 spring probe (pressing means) 130 130 substrate 140 sample support system 142 Sample stand, 144: elevating shaft, 145: elevating drive unit, 146: housing, 147: XY stage (positioning means) 150: drive control system, 151: operation unit, 170: tester, 171: cable, 172: cable, 180: individual probe system, 181: motherboard, 182: cable, 183: connector, 184: support board, 185: wafer support Substrate, 185a recess, 186 holding plate, 186a channel, 187 knock pin (positioning means), 188 hole, 190 support, 207 wiring board, 207c connector terminal, 207d wiring, 209 board.

Claims (1)

A connection device for transmitting and receiving an electric signal in electrical contact with a plurality of electrodes arranged on an object to be inspected,
The wiring sheet includes a contact electrode having a plurality of connection terminals that are in contact with the electrode of the object to be inspected. The connection terminal is a connection terminal formed by etching or a connection terminal formed by plating. A connection device, characterized in that:

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