JP2004144752A - 金属層を用いた化学的アレイアセンブリとの結合 - Google Patents
金属層を用いた化学的アレイアセンブリとの結合 Download PDFInfo
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Abstract
【解決手段】 表面に官能基が配置された基体を準備する。この表面はリンカー分子に接触され、リンカー分子の各々は、表面に配置された官能基との反応後にリンカー分子を表面に結合させる基を有する。この反応は、金属層を攻撃する反応物質を生成しない。アレイを製造するには、表面はプローブ又はプローブ前駆体と接触され、プローブ又はプローブ前駆体を表面に結合されたリンカー分子と結合させる。
【選択図】 図5
Description
a)98%のデシルトリエトキシシランと2%の11−トリエトキシシリルウンデシルアセテートの溶液4ml(2〜6mlの範囲)を、100mlのトルエン中で一晩撹拌する。トルエン中には予め、1ml当たり約400マイクログラム(300〜450μg/mlの範囲)の水が溶解されている。
b)次いで基体の表面を室温で2時間にわたってa)の溶液で処理し、その時間の後に、まずトルエン、次にメタノール、最後に水で洗浄する。
c)堆積されるホスホアミダイトプローブ前駆体を表面上のリンカー分子へと接触に際して結合させるために、以下の手順を用いて、アセテート官能基は反応性官能基に転化される。即ちアセテート基は次いで、室温で5分間にわたり、アルコール溶液中において、0.2Nのナトリウムメトキシド(又は他のアルコキシド)で加水分解される。この結果、ヒドロキシル基で終端された単層が得られる。加水分解の代替法には、(A)例えば水酸化ナトリウム又は水酸化カリウムのようなアルカリの水溶液、又は(B)酸の水溶液で、アセテート基を50℃で1時間にわたり処理するステップがある。しかしながら、アルコール溶液とは異なり、水溶液は、シロキシル結合を極めて容易に加水分解する傾向があるため、即ち−O−Si結合を開裂する傾向があるため、注意が必要である。また、希酸溶液は可撓性基体を攻撃するが、それを阻止できるのは、保護層であるシラン単層の一体性が完全な場合だけである。従って第一には、アルコール溶液を利用するのがよい。
ここで、Siは2つのHに結合してもよく、或いは1つ又は2つの他の基で置換されてもよい。OはHと結合されない。例えば式(1)の基は、Siと結合されたヒドロカルビルオキシ基を有してよく、次の式からなることができる。
ここで、Rpはアルキル基(例えば低級アルキル基)のようなヒドロカルビル基であり、Lはリンカー成分を表し、nは0又は1である。従ってリンカーは存在してもしなくともよい。R2は、接触に際して、堆積されるプローブ又はプローブ前駆体(ヌクレオシドホスホアミダイトのような)を結合させる反応性官能基、又はこうした反応性官能基に転化可能なリンカー官能基を表している。存在する場合、Lは一般にC1−C24ヒドロカルビレン結合基、例えばC10−C18アルキレンである。式(2)のSiには1つ、2つ、又は3つのRp基が存在しうる。1つより多くが存在する場合には、それらが相互に同じでも異なっていてもよい。例えば式(2)には、式−Si(ORp)3のトリアルコキシ基が含まれうるが、この場合にRpは何れかが相互に同じ又は異なるアルキル基でありうる(例えば、各Rpはエチル基のような低級アルキル基であり得るが、その場合に前述の基はトリエトキシとなる)。
ここで、R2は加水分解可能なカルボン酸エステル基である。もちろん、Rx及びRyが脱離基でなければ、得られる表面部分は実際には、−SiRxRy−(L)nR2基となるが、出願人は式(3)のより一般的な表現−Si−(L)n−R2によってそれを包含することを意図している。
11a 表面
11b 裏面
12 アレイ
14a 裏面層
14b 結合層
14c 金属層
14d 表面層
16 特徴
17 アレイ間領域
Claims (27)
- 基体の表面に対し異なるアレイ特徴でもって結合された多数のプローブのアレイを製造する方法であって、前記基体が金属層を含むものにおいて、前記方法が、
(a)前記表面に官能基が配置されてなる前記基体を設け、
(b)前記表面を、前記表面に配置された官能基との反応後にリンカー分子を前記表面に結合させる基を各々に有するリンカー分子と接触させ、前記反応が前記金属層を攻撃する反応物質を生成せず、及び
(c)前記表面をプローブ又はプローブ前駆体と接触させて、前記プローブ又はプローブ前駆体を前記表面に結合されたリンカー分子と結合し、前記アレイを生成することからなる方法。 - 前記反応が酸を生成しない、請求項1に記載の方法。
- 基体の表面に対し異なるアレイ特徴でもって結合された多数のプローブのアレイを製造する方法であって、前記基体が金属層を含むものにおいて、前記方法が、
(a)前記表面にヒドロキシル基が配置されてなる前記基体を設け、
(b)前記表面を、前記表面に配置されたヒドロキシル基との反応後にエーテル結合を介してリンカー分子を前記表面に結合させるシリルオキシ基を各々に有するリンカー分子と接触させ、及び
(c)前記表面をプローブ又はプローブ前駆体と接触させて、前記プローブ又はプローブ前駆体を前記表面に結合されたリンカー分子と結合し、前記アレイを生成することからなる方法。 - 前記プローブが、多数の異なる特徴位置の各々をプローブ前駆体と繰り返し接触させることからなるin situ合成によって前記表面上に生成される、請求項3に記載の方法。
- 前記基体が、裏面層、前記表面が置かれる表面層、及び前記裏面層と前記表面層の間に位置する金属層を有する、請求項3に記載の方法。
- 前記表面層がガラスを含む、請求項5に記載の方法。
- 前記(b)が、前記表面をアルカリ条件に置くことを含む、請求項5に記載の方法。
- 前記プローブがポリマーである、請求項3に記載の方法。
- 前記ポリマーが核酸である、請求項8に記載の方法。
- 前記ポリマーがペプチドである、請求項8に記載の方法。
- 前記金属層がクロムを含む、請求項3に記載の方法。
- 前記シリルオキシ基がシリルアルコキシドである、請求項3に記載の方法。
- 前記シリルアルコキシドがシリルエトキシドである、請求項3に記載の方法。
- 前記(c)における前記プローブ又はプローブ前駆体が接触後、前記表面に結合されたリンカー分子と結合しない場合に、前記リンカー分子の官能基をプローブ又はプローブ前駆体と反応性の官能基に転化させることをさらに含む、請求項3に記載の方法。
- 前記基体が、裏面層、前記表面が置かれる透明表面層、及び前記裏面層と前記表面層の間に位置する金属層を有する、請求項3に記載の方法。
- 請求項1の方法によって生成されたアレイを試料に曝露することからなる、アレイの使用方法。
- 前記アレイを読み取ることをさらに含む、請求項16に記載の方法。
- 請求項17の方法によって得られた読み取り結果を遠隔地に送ることからなる方法。
- 請求項17の方法によって得られた読み取り結果を表すデータを送信することからなる方法。
- 請求項17の方法によって得られた読み取り結果を受信することからなる方法。
- 請求項1の方法によって生成されたアレイ。
- 表面が変性された基体を製造する方法であって、前記基体が金属層を含むものにおいて、前記方法が、
(a)前記表面に官能基が配置されてなる前記基体を設け、
(b)前記表面を、前記表面に配置された官能基との反応後にリンカー分子を前記表面に結合させる基を各々に有するリンカー分子と接触させ、前記反応が前記金属層を攻撃する反応物質を生成しないことからなる方法。 - 前記反応が酸を生成しない、請求項22に記載の方法。
- 表面が変性された基体を製造する方法であって、前記基体が金属層を含むものにおいて、前記方法が、
(a)前記表面にヒドロキシル基が配置されてなる前記基体を設け、
(b)前記表面を、前記表面に配置されたヒドロキシル基との反応後にエーテル結合を介してリンカー分子を前記表面に結合させるシリルオキシ基を各々に有するリンカー分子と接触させることからなる方法。 - 前記基体が、裏面層、前記表面が置かれる表面層、及び前記裏面層と前記表面層の間に位置する金属層を有する、請求項24に記載の方法。
- 前記表面層がガラスを含む、請求項25に記載の方法。
- 前記金属層がクロムを含む、請求項24に記載の方法。
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US10/277,925 US7129046B2 (en) | 2002-10-21 | 2002-10-21 | Linking to chemical array assemblies with metal layers |
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JP2004144752A5 JP2004144752A5 (ja) | 2006-11-30 |
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Cited By (2)
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WO2006001648A1 (en) * | 2004-06-23 | 2006-01-05 | Industry-University Cooperation Foundation Sogang University | The method ofprepaeing substrates - molecular sieve layer complex using ultrasound and apparatuses used therein |
WO2009119082A1 (ja) * | 2008-03-26 | 2009-10-01 | 独立行政法人理化学研究所 | 物質固定用基板、物質固定化基板および分析方法 |
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US7202358B2 (en) * | 2002-07-25 | 2007-04-10 | Agilent Technologies, Inc. | Methods for producing ligand arrays |
EP1742054A4 (en) * | 2004-04-28 | 2008-01-16 | Japan Science & Tech Agency | BIOCHIP PRODUCTION PROCESS, BIOCHIP, BIOCHIP ANALYSIS DEVICE, BIOCHIP ANALYSIS PROCEDURE |
US20070264155A1 (en) * | 2006-05-09 | 2007-11-15 | Brady Michael D | Aerosol jet deposition method and system for creating a reference region/sample region on a biosensor |
WO2007141811A2 (en) * | 2006-06-06 | 2007-12-13 | Stmicroelectronics S.R.L. | Process for preparing a semiconductor substrate for biological analysis |
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US5429807A (en) * | 1993-10-28 | 1995-07-04 | Beckman Instruments, Inc. | Method and apparatus for creating biopolymer arrays on a solid support surface |
US5631734A (en) * | 1994-02-10 | 1997-05-20 | Affymetrix, Inc. | Method and apparatus for detection of fluorescently labeled materials |
US6015880A (en) * | 1994-03-16 | 2000-01-18 | California Institute Of Technology | Method and substrate for performing multiple sequential reactions on a matrix |
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US5658802A (en) * | 1995-09-07 | 1997-08-19 | Microfab Technologies, Inc. | Method and apparatus for making miniaturized diagnostic arrays |
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Cited By (6)
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WO2006001648A1 (en) * | 2004-06-23 | 2006-01-05 | Industry-University Cooperation Foundation Sogang University | The method ofprepaeing substrates - molecular sieve layer complex using ultrasound and apparatuses used therein |
GB2431637A (en) * | 2004-06-23 | 2007-05-02 | Univ Sogang Ind Univ Coop Foun | The Method of Preparing Substrates-Molecular Sieve Layer Complex using Ultrasound and Apparatuses used Therein |
GB2431637B (en) * | 2004-06-23 | 2009-08-05 | Univ Sogang Ind Univ Coop Foun | The Method of Preparing Substrates-Molecular Sieve Layer Complex using Ultrasound and Apparatuses used Therein |
US8288302B2 (en) | 2004-06-23 | 2012-10-16 | Industry University Cooperation Foundation Sogang University | Method of preparing substrates—molecular sieve layers complex using ultrasound and apparatuses used therein |
WO2009119082A1 (ja) * | 2008-03-26 | 2009-10-01 | 独立行政法人理化学研究所 | 物質固定用基板、物質固定化基板および分析方法 |
JP5344438B2 (ja) * | 2008-03-26 | 2013-11-20 | 独立行政法人理化学研究所 | 物質固定用基板、物質固定化基板および分析方法 |
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US7129046B2 (en) | 2006-10-31 |
US20040076963A1 (en) | 2004-04-22 |
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