JP2004119834A - Substrate treating equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reduce impurities attached to the surface of a substrate in a process required for cleaning the atmosphere in a treatment space for a wafer. <P>SOLUTION: Substrate treating equipment is provided in which an HSG is formed on the wafer W, while flowing an SiH<SB>4</SB>gas onto the wafer W substantially parallel to its surface. Specifically, the equipment is so arranged that the HSG is formed on the wafer W in a condition where a plate 70 whose entire length A in the direction of the SiH<SB>4</SB>gas flow is made larger than its entire length B in a direction vertical to the SiH<SB>4</SB>gas flow, is located around the wafer W, being substantially parallel to the wafer W. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method for manufacturing a semiconductor device and a substrate processing apparatus used for implementing the method.
[0002]
[Prior art]
Almost constant capacitance values are required for DRAM capacitors. However, as DRAMs become more highly integrated, the area occupied by capacitor cells tends to be smaller, and as a result, capacitor capacitance values become insufficient and stable. The storage operation cannot be performed. Therefore, as a method for securing the capacitance of the capacitor, thinning of a capacitance insulating film, adoption of a high dielectric constant insulating film, enlargement of an electrode surface area, and the like are performed. Among them, Si which is a capacitive insulating film ₃ N ₄ The thinning of the film has almost reached its limit. The capacitive insulating film is made of Ta having a high dielectric constant. ₂ O ₅ Although it is shifting to a film, its dielectric constant is Si ₃ N ₄ This is about 2.5 times that of the film, which is not always sufficient.
[0003]
Therefore, high integration of the device cannot be dealt with by increasing the surface area of the electrode by forming irregularities such as hemi-spherical grains (HSG) (hereinafter collectively referred to as HSG). The fact is that you don't get it. As this method, for example, HSG is generated on the silicon surface by controlling the nucleation temperature of the amorphous silicon film as the lower electrode, and the surface area where the HSG is generated is, for example, the surface area of the polycrystalline silicon film formed at 600 ° C. A technique for increasing the frequency by a factor of two or more is known (for example, see Patent Document 1).
[0004]
This technique is based on the premise that the surface of the amorphous silicon film is kept in a substantially clean state, and the method of forming a thin film is not particularly limited by the CVD method or the MBE method. By supplying, a crystal nucleus is formed on the surface of the amorphous silicon film, and thereafter, the supply of gas is stopped to grow the crystal nucleus. Regarding the formation of such an HSG, it is necessary that the HSG particle size and the particle density are uniform from the viewpoint of the yield of the semiconductor device.
[0005]
[Patent Document 1]
JP-A-5-304273 (page 3-7, FIG. 1)
[0006]
[Problems to be solved by the invention]
However, there is a difficulty in forming the HSG that the HSG is easily formed depending on the surface condition of the wafer. Therefore, in this type of technology, it is a very important issue how to keep the surface of the wafer clean until HSG is formed.
[0007]
An object of the present invention is to provide a technique for reducing impurities adhering to the surface of a substrate in a process that requires cleaning of an atmosphere in a processing space of the substrate.
[0008]
[Means for Solving the Problems]
According to the present invention, in a substrate processing apparatus for processing a substrate while flowing a processing gas substantially parallel to the substrate surface, the total length of the processing gas in the flow direction of the processing gas is A substrate processing apparatus characterized in that a plate formed so as to be larger than the entire length in a direction perpendicular to the flow is disposed around the substrate substantially in parallel with the substrate, and the substrate is processed. Provided.
[0009]
Further, according to the present invention, a plate arranging step of arranging a plate substantially parallel to the substrate around the substrate, and in a state where the plate is arranged around the substrate, substantially parallel to the surface of the substrate and the substrate. A substrate processing step of processing the substrate while flowing a processing gas, wherein the entire length of the plate in the flow direction of the processing gas is perpendicular to the flow of the processing gas. A semiconductor device manufacturing method characterized by being larger than the total length in any direction.
[0010]
In the present invention, since the plate is arranged around the substrate, impurities to be attached to the substrate are attached not to the substrate but to the plate. As a result, compared with the case where no plate is used, the impurities attached to the substrate can be drastically reduced. Further, the plate is disposed substantially parallel to the substrate, and the total length in the flow direction of the processing gas is larger than the total length in the direction perpendicular to the flow of the processing gas, so that the flow of the processing gas is not disturbed. In particular, impurities that flow down or up in the flow direction of the processing gas can be effectively captured.
[0011]
In the present invention, it is preferable that the plate has irregularities formed on the surface of the processing gas on the upstream side or on both the upstream side and the downstream side. Further, the plate may be formed by forming irregularities on the entire surface. In this case, the irregularities are preferably formed by sandblasting.
[0012]
In the present invention, it is preferable that the plate is arranged such that the surface of the substrate and the surface of the plate are substantially coplanar. Preferably, the plate is rectangular in plan view. In the present invention, the processing gas is monosilane (SiH ₄ ), And the treatment is preferably the formation of HSG.
[0013]
In the present invention, it is preferable that the area of the plate on the upstream side and / or the downstream side in the flow direction of the processing gas is larger than the area on the side perpendicular to the gas flow.
In detail, the plate has an area of a margin a1 on the left side of the left end of the substrate and an area of a margin a2 on the right side of the right end of the substrate in a plan view in which the flow direction of the processing gas flows in the left-right direction. Is preferably greater than the sum of the area of the margin b1 above the upper end of the substrate and the area of the margin b2 below the lower end of the substrate.
[0014]
According to the present invention, in a substrate processing apparatus having a reaction chamber in which processing of the substrate is performed while processing gas is flowed in one direction substantially parallel to the substrate with respect to the surface of the substrate, The substrate may be processed in a state in which a plate having a first impurity attachment region to which impurities are attached is arranged substantially parallel to the substrate on the upstream side in the flow direction of the processing gas from the substrate. A featured substrate processing apparatus is also provided.
It is preferable that the surface of at least the first impurity attachment region is formed with irregularities. It is preferable that the surface of at least the first impurity attachment region is coated with silicon.
[0015]
In this case, the plate is a second impurity-attaching region to which impurities flowing in a direction opposite to the flow direction of the processing gas are attached downstream of the substrate in the flow direction of the processing gas. It is preferable to further have It is preferable that the surface of the second impurity attachment region is formed with irregularities. It is preferable that the surface of the second impurity deposition region is coated with silicon. It is preferable that the plate supports the substrate with a support portion (for example, a concave portion such as a support claw or a counterbore) provided on the plate. In one embodiment, a disk-shaped semiconductor substrate is employed as the substrate.
[0016]
BEST MODE FOR CARRYING OUT THE INVENTION
FIG. 1 is a plan view of a substrate processing apparatus according to an embodiment. In FIG. 1, reference numeral 20 denotes a transfer chamber. Load lock chambers 10, 10, cooling chambers 60, 60, and reaction chambers 30, 30 are radially connected around the transfer chamber 20, respectively. Gate valves 40, 40 are provided between the load lock chambers 10, 10 and the transfer chamber 20, respectively. Further, gate valves 50, 50 are provided between the reaction chambers 30, 30 and the transfer chamber 20, respectively. Note that a wafer transfer robot (not shown) is disposed in the transfer chamber 20.
A cassette accommodating a plurality of wafers W may be loaded into the load lock chambers 10, 10, or a wafer holder may be placed in the load lock chambers 10, 10, and the wafer holder may be placed in the wafer holder. May be directly transferred.
[0017]
FIG. 2 is a longitudinal sectional view showing a configuration around the reaction chamber 30 in the present substrate processing apparatus. Although the present substrate processing apparatus has two reaction chambers 30, 30, each has the same configuration. Therefore, only one reaction chamber 30 will be described. The reaction chamber 30 is a hot wall type single-wafer type film forming apparatus. In the reaction chamber 30 connected to the transfer chamber 20 via the gate valve 50, a plate 70 is arranged around the wafer W to be processed. The supporting portion of the plate 70 supports the wafer W.
[0018]
Further, a monosilane gas (SiH ₄ ) A supply nozzle 130 is connected. On the other hand, an exhaust pipe 135 is connected to the opposite side of the nozzle 130 across the wafer W in the reaction chamber 30. As a result, the gas supplied from the nozzle 130 flows in one direction substantially parallel to the surface of the wafer W with respect to the surface of the wafer W, and is then sucked by the turbo molecular pump 140 via the exhaust pipe 135.
The reaction chamber 30 is compatible with an ultra-high vacuum. Also, SiH ₄ The flow rate of the gas is controlled by a flow rate control unit (not shown) so as to be a predetermined flow rate.
[0019]
As described above, by flowing the processing gas from one direction to the surface of the wafer W, uniformity within the wafer surface can be secured with good selectivity. This is because the growth rate is slower than that of disilane, and monosilane is used to easily control HSG formation. Since monosilane grows at a lower temperature than dichlorosilane in a compound gas containing silicon, it is effective to prevent the underlying amorphous silicon film from being crystallized.
[0020]
Outside the reaction chamber 30, a pair of heaters 210, 210 facing each other so as to sandwich the front and back surfaces of the wafer W arranged in the reaction chamber 30 is provided. By heating the upper and lower portions of the wafer W with the face-to-face heaters 210, 210, temperature uniformity within the wafer W surface can be easily secured in a short time. Each of the heaters 210 is controlled by a temperature control unit (not shown) for controlling the temperature in the reaction chamber 30 to fall within a predetermined temperature range.
[0021]
The face-to-face heaters 210 have the same structure in the upper and lower parts. Each of the heaters 210 is a divided resistance heater divided into a plurality (for example, five). The temperature distribution of the wafer W required for stable formation of the HSG film can be kept at ± 0.5 ° C. by independently controlling the energization of each of the divided parts.
[0022]
FIG. 3A is a plan view of a plate 70 supporting the wafer W, and FIG. 3B is a cross-sectional view thereof.
As shown in the figure, the plate 70 has a size through which the wafer W can pass with a play in the plane direction, and has a through hole 76 penetrating in the thickness direction of the plate 70. At least three (here, four) support claws 75 for supporting the back surface of the wafer W are provided in the lower opening. These support claws constitute a support portion for the wafer W.
[0023]
Further, as shown in FIG. 3B, the plate 70 is thicker than the wafer W, and the depth from the upper opening of the through-hole 76 to the support claws 75 is made substantially equal to the thickness of the wafer W. . Thus, when the wafer W is supported by the support claws 75, the surface of the wafer W and the surface of the plate 70 are arranged on substantially the same plane.
[0024]
The through-hole 76 is formed substantially at the center of the plate 70 in a plan view. Therefore, when the wafer W is supported by each of the support claws 75, the plate 70 is arranged around the wafer W. More specifically, at this time, the entire periphery of the wafer W is surrounded by the plate 70.
[0025]
Further, as shown in FIG. 3A, the plate 70 has a rectangular shape in which the total length A in the flow direction of the processing gas is larger than the total length B in the direction perpendicular to the flow of the processing gas in plan view. (A> B). However, B is larger than the outer diameter of the wafer W. Accordingly, the plate 70 has a size such that the wafer W does not protrude from the plate 70 in a plan view when the wafer W is supported by the support claws 75 of the plate 70.
[0026]
Specifically, as shown in FIGS. 4A and 4B, the plate 70 is made of SiH. ₄ In a plan view in which the gas flow direction is from left to right, the area of a margin a1 on the left side of the left end of the wafer W supported by the support claws 75 provided on the plate 70, and the right end of the wafer W The sum of the area of the margin a2 on the right side of the wafer W is larger than the sum of the area of the margin b1 above the upper end of the wafer W and the area of the margin b2 below the lower end of the wafer W. Is configured.
[0027]
In the plate 70, the margin a1 functions as a first impurity deposition region to which impurities flowing down in the flow direction of the processing gas adhere, and the margin a2 serves as an impurity flowing in the opposite direction to the flow direction of the processing gas. Functions as a second impurity attachment region to which is attached.
[0028]
Hereinafter, a method of processing a wafer, which is a substrate, using the present substrate processing apparatus as one step of a semiconductor device manufacturing process will be described.
First, before transferring a wafer W having an amorphous silicon film formed on a predetermined capacitance electrode portion of a semiconductor chip to the present substrate processing apparatus, a natural oxide film or NH ₄ OH + H ₂ O ₂ + H ₂ After removing the chemical oxide film formed by the mixed solution of O or the like by washing in advance with, for example, a diluted hydrofluoric acid aqueous solution, a drying process is performed by a spin dry drier or the like.
[0029]
Next, the wafer W that has been subjected to the drying process is quickly transported to the cassette chamber 10 in the present substrate processing apparatus while being clean. By transporting the substrate while it is clean, contamination in the substrate processing apparatus including the cassette chamber 10 can be prevented. Further, by quickly transporting the wafer W, it is possible to prevent a contaminant from adhering to the wafer and prevent a natural oxide film from being formed again. At this point, if a large amount of foreign matter or a natural oxide film is attached or formed on the surface of the amorphous silicon film, the state of the surface of the amorphous silicon and the state of the surface of the natural oxide film deposited on the amorphous silicon are changed. Are different from each other, the HSGs are not formed, or the HSG formation state, that is, the HSG particle size and density are different. This causes a reduction in the yield of semiconductor devices.
[0030]
Next, the inside of the cassette chamber 10 is depressurized while purging with high-purity nitrogen to remove the atmosphere. The reason why the pressure is reduced while purging with high-purity nitrogen is to satisfy that the moisture is sufficiently saturated in the atmosphere by purging with dry nitrogen, and the water (liquid) adhering to the wafer surface or the cassette due to the rapid pressure reduction. Are not all converted to water vapor (gas), but rather to prevent the temperature from dropping due to heat taken away when a part of the gas is converted to ice (solid). After the ice is conveyed into the reaction chamber 30, it is melted by heat and turns into water, so that a part of the surface is oxidized and hinders the formation of HSG. Further, by forming an air flow by purging, an effect of discharging the deposits on the wafer W or the like can be obtained. It is also effective to increase or decrease the pressure in the cassette 10 several times to replace the residual substance to the maximum.
[0031]
Further, the transfer chamber 20 is always purged with nitrogen so that impurity substances existing in the transfer chamber 20 or generated in the transfer chamber 20 do not adhere to the surface of the wafer W.
[0032]
Next, as described above, after removing impurity substances such as oxygen and moisture in the atmosphere in the cassette chamber 10, the pressures in the cassette chamber 10, the transfer chamber 20, and the reaction chamber 30 are made equal while purging with nitrogen. Thereafter, the respective gate valves 40 and 50 are opened.
[0033]
[Plate arrangement process]
Next, the wafer W is loaded into the reaction chamber 30 from the cassette chamber 10 via the transfer chamber 20 by the wafer transfer robot arranged in the transfer chamber 20, but prior to the transfer of the wafer W or together with the transfer of the wafer W, A plate 70 is placed in the reaction chamber 30. In one embodiment, the plate 70 is placed in the reaction chamber 30 first, and then the wafer W is supported by the support claws 75 of the plate 70. In another embodiment, the unprocessed wafers W are previously supported by the support claws 75 of the plate 70 (the state shown in FIG. 3), and are loaded into the reaction chamber 30 by a robot hand or the like.
[0034]
(Substrate processing step)
Next, the temperature of the wafer W carried into the reaction chamber 30 is first stabilized at a preset temperature (for example, 600 to 620 ° C.). At this time, the atmosphere in the reaction chamber 30 is a high vacuum or a non-reactive gas (for example, nitrogen or another inert gas) that does not react with the amorphous silicon surface.
[0035]
Next, SiH is introduced into the reaction chamber 30. ₄ Supply gas. That is, in a state where the wafer W is supported by the support claws 75 of the plate 70, the SiH ₄ Let the gas flow. Thereby, fine crystal nuclei are formed on the surface of the amorphous silicon (nucleus forming step).
[0036]
Then, SiH ₄ The supply of gas is stopped, and crystal nuclei formed on the surface of the amorphous silicon are grown by migration of silicon atoms. Thereby, HSG is formed on the amorphous silicon film (nucleus growth step).
[0037]
After the HSG is formed in the reaction chamber 30 and the above-described substrate processing step is completed, the gate valve 50 is opened. Then, the processed wafer W in the reaction chamber 30 is transferred to the wafer cooling chamber 60 via the transfer chamber 20 by the wafer transfer robot arranged in the transfer chamber 20. When the processed wafer W is sufficiently cooled in the cooling chamber 60, the gate valve 40 is opened, and the sufficiently cooled processed wafer W is carried out to the cassette chamber 10 by the wafer transfer robot arranged in the transfer chamber 20, and is processed. To end.
[0038]
According to the present substrate processing apparatus, the following effects can be obtained.
(1) Since the processing is performed in a state where the plate 70 is arranged around the wafer W, impurities to be attached to the wafer W can be attached not to the wafer W but to the plate 70. Thereby, compared to the case where the plate 70 is not used, the impurities adhering to the wafer W can be remarkably reduced. Further, the plate 70 is disposed substantially parallel to the wafer W and has a SiH ₄ The total length in the gas flow direction is SiH ₄ Since it is larger than the total length in the direction perpendicular to the gas flow, the SiH ₄ Without disturbing the gas flow, especially with SiH ₄ Impurities flowing down or up in the gas flow direction can be appropriately captured.
[0039]
(2) Specifically, the plate 70 is made of SiH ₄ In a plan view in which the gas flow direction is from left to right, a margin a1 is provided on the left side of the left end of the wafer W. ₄ It functions as a first impurity-attached region a1 to which impurities flowing down in the gas flow direction are attached. Thus, for example, when the unprocessed wafer W is transferred to the reaction chamber 30, an impurity that has flowed into the reaction chamber 30 from the cassette chamber 10 or the transfer chamber 20, an O-ring that seals the inside of the reaction chamber 30 from the outside. Before the impurities that have entered the reaction chamber 30 due to a leak in a sealing member such as a sealing member (not shown) or the impurities in the gas released from the O-ring or other components adhere to the wafer W, the impurities in the plate 70 are removed. It is captured in one impurity attachment region a1. Therefore, impurities adhering to the wafer W can be reduced, and as a result, the cleanliness of the wafer surface can be improved and HSG growth inhibition can be prevented.
[0040]
(3) The plate 70 is made of SiH ₄ Since the gas flow direction has a margin a2 on the right side of the right end of the wafer W in a plan view in which the gas flows from left to right, this margin is SiH ₄ It functions as a second impurity-attaching region a2 to which an impurity flowing in a direction opposite to the gas flow direction is attached. Therefore, impurities diffused back from the exhaust system such as the exhaust pipe 135 are captured in the second impurity-attached region a2 of the plate 70 before adhering to the wafer W. Thereby, impurities attached to the wafer W can be further reduced. As a result, the cleanliness of the wafer surface is further improved, and HSG growth inhibition can be reliably prevented.
[0041]
(4) The HSG forming process performed in the reaction chamber 30 is a process that is greatly affected by the surface state of the wafer W. Here, the cleanliness of the surface of the wafer W largely depends on the atmosphere of the reaction chamber 30. Therefore, by improving the structure of the reaction chamber 30 and reviewing the parts used, for example, O ₂ , H ₂ It is desired to reduce the leakage from the outside such as O and the released gas to achieve high purification.
In response to this request, according to the present embodiment, the use of the plate 70 for adhering impurities enables the surface of the wafer W to be highly purified without any change in the structure of the conventional reaction chamber and the components used. That can be achieved.
[0042]
In the above, SiH which is the same gas as the processing gas for the wafer W is provided on the plate 70. ₄ It is preferable to apply a silicon (Si) coating using a gas. The Si coating is preferably applied to at least the first impurity-attaching region a1 and the second impurity-adhering region a2, but the entire surface of the plate 70 may be coated with silicon. In this way, the effect of the plate 70 for adhering impurities can be further improved.
[0043]
[Modification 1]
FIG. 5 shows a modification of the plate. The plate 71 is substantially the same as the plate 70 in that it has a through hole 76 of a size corresponding to the wafer W and at least three support claws 75, but the margin a1 of the plate 70 (the first impurity attachment The area corresponding to the area a) and the margin a2 (the area for adhering the second impurity) are provided with irregularities 71a and 71b by sandblasting, respectively. By providing the irregularities 71a and 71b in this manner, the effect of attaching impurities in the first impurity attaching region a1 and the second impurity attaching region a2 can be further improved. In addition, the irregularities 71a and 71b do not easily release the impurities once attached, so that the contamination in the reaction chamber 30 can be further reduced.
It is also effective to provide the unevenness on the entire surface of the plate 71. Further, when silicon is coated on the irregularities, the effect of adhering impurities can be further improved.
[0044]
[Modification 2]
FIG. 6 shows another modification of the plate. The plate 72 is substantially the same as the plate 70 in that the plate 72 has a through hole 76 having a size corresponding to the wafer W and at least three support claws 75. However, in a plan view, the flow direction of the processing gas (in FIG. , Left and right directions) as a major axis. This plate 72 is also formed such that the total length A in the flow direction of the processing gas is larger than the total length B in the direction perpendicular to the flow of the processing gas (A> B). The plate 72 has an area of a margin a1 on the left side of the left end of the wafer W and an area of a margin a2 on the right side of the right end of the wafer W in a plan view in which the flow direction of the processing gas is from left to right. Is larger than the sum of the area of the margin b1 above the upper end of the wafer W and the area of the margin b2 below the lower end of the wafer W. Therefore, effects similar to those of the above embodiment and Modification 1 can be obtained.
[0045]
[Modification 3]
FIG. 7 shows still another modification of the plate. The plate 73 is substantially the same as the plate 70 in that the plate 73 has a through hole 76 having a size corresponding to the wafer W and at least three support claws 75. The end of the gas flow direction) is formed in a semicircle or arc shape. This plate 72 is also formed such that the total length A in the flow direction of the processing gas is larger than the total length B in the direction perpendicular to the flow of the processing gas (A> B). The plate 7 has an area of a margin a1 on the left side of the left end of the wafer W and an area of a margin a2 on the right side of the right end of the wafer W in a plan view in which the flow direction of the processing gas is from left to right. Is larger than the sum of the area of the margin b1 above the upper end of the wafer W and the area of the margin b2 below the lower end of the wafer W. Therefore, effects similar to those of the above embodiment and Modification 1 can be obtained.
As described above, as shown in Modifications 2 and 3, the shape of the plate is not particularly limited to a rectangle.
[0046]
The plate is not particularly limited to the above-mentioned one, and the design can be changed as appropriate. For example, instead of the through hole 76, a bottomed recessed portion such as a counterbore may be formed in the plate. In this case, the support claws 75 become unnecessary, and the wafer W is supported on the bottom surface of the concave portion. Further, by making the depth of the concave portion substantially equal to the thickness of the wafer W, when the wafer W is supported by the bottom surface of the concave portion, the surface of the wafer W and the surface of the plate are arranged on substantially the same plane. Will be done.
[0047]
(Comparative example)
After immersing the wafer in a 1% hydrofluoric acid aqueous solution for 1 minute to remove the natural oxide film or the chemical oxide film formed on the wafer, the wafer is dried by a spin dry drier, and immediately the cassette chamber is dried. Conveyed to 10. Then, the pressure in the cassette chamber 10 is reduced while purging the cassette chamber 10 with high-purity nitrogen to remove the air in the cassette chamber 10. Further, after raising and lowering the pressure in the cassette chamber 10 a plurality of times, the cassette chamber 10 and the transfer chamber 20 and the reaction chamber 30 are purged with nitrogen to have the same pressure, and the wafer is transferred from the cassette chamber via the transfer chamber 20 via the transfer chamber 20. It is transported to the reaction chamber 30.
[0048]
However, at this time, it is inevitable that the atmosphere in the cassette chamber 10 and the transfer chamber 20 is brought into the reaction chamber 30 together with the wafer. Therefore, if impurities exist in the atmosphere, the impurities will enter the reaction chamber 30. As a result, in the process of performing the HSG formation process on the wafer in the reaction chamber 30, the growth of crystal nuclei may be inhibited.
Also, during the HSG forming process, impurities may enter the reaction chamber 30 due to a leak in a sealing member such as an O-ring (not shown) for sealing the inside of the reaction chamber 30 from the outside, or the O-ring or other components may be used. A gas containing impurities may be released, or impurities may flow from an exhaust system. These factors may also hinder the growth of crystal nuclei.
[0049]
On the other hand, the present invention does not eliminate these factors themselves, but as described above, avoids or at least reduces problems such as crystal nucleus growth inhibition caused by these factors by using a plate or the like. Things.
[0050]
【The invention's effect】
ADVANTAGE OF THE INVENTION According to this invention, the impurity which adheres to the surface of the said board | substrate can be reduced in the process which needs to clean the atmosphere in the processing space of a board | substrate.
[Brief description of the drawings]
FIG. 1 is a schematic plan view of a substrate processing apparatus according to an embodiment.
FIG. 2 is a schematic longitudinal sectional view showing a configuration of a reaction chamber in the substrate processing apparatus.
FIG. 3 is a schematic plan view showing one embodiment of a plate.
FIG. 4 is a schematic plan view showing one embodiment of a plate.
FIG. 5 is a schematic plan view showing another embodiment of the plate.
FIG. 6 is a schematic plan view showing still another embodiment of the plate.
FIG. 7 is a schematic plan view showing still another embodiment of the plate.
[Explanation of symbols]
Reference Signs List 10: cassette chamber, 20: transfer chamber, 30: reaction chamber, 40, 50: gate valve, 60: cooling chamber, 70: plate, 130: SiH ₄ Gas (processing gas) supply nozzle, W: wafer (substrate).

Claims (1)

In a substrate processing apparatus that processes the substrate while flowing a processing gas substantially parallel to the surface of the substrate,
In a state in which a plate formed so that the total length in the flow direction of the processing gas is larger than the total length in the direction perpendicular to the flow of the processing gas is disposed substantially parallel to the substrate around the substrate, A substrate processing apparatus for processing a substrate.

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