JP2004119672A

JP2004119672A - Solid-state imaging device and its manufacturing method

Info

Publication number: JP2004119672A
Application number: JP2002280755A
Authority: JP
Inventors: Kiyoshi Higashihara; 東原　清
Original assignee: Sony Corp
Current assignee: Sony Corp
Priority date: 2002-09-26
Filing date: 2002-09-26
Publication date: 2004-04-15
Anticipated expiration: 2022-09-26
Also published as: JP4543605B2

Abstract

<P>PROBLEM TO BE SOLVED: To prevent the damage or the faulty connection for a semiconductor chip in the constitution wherein the semiconductor chip is bent to absorb the bending of an imaging surface in an imaging optical system. <P>SOLUTION: An intermediate reinforcing member 140 integrated with the semiconductor chip 110 is interposed and arranged between the semiconductor chip 110 and the bent mounting surface 120A of a package main body 120, whereby the chip 110 is reinforced by the intermediate reinforcing member 140 upon bending the same and the generation of a crack upon bending the semiconductor chip 110 is prevented. Further, the semiconductor chip 110 is not abutted directly against the package main body 120. Furthermore, upon wire bonding of the semiconductor chip 110 also, a shock applied on the semiconductor chip 110 by the wire bonding is absorbed and mitigated by the intermediate reinforcing member 140 to prevent the damage of the semiconductor chip 110 itself or an electrode pad due to the wire bonding. <P>COPYRIGHT: (C)2004,JPO

Description

【０００１】
【発明の属する技術分野】
本発明は、例えばＣＣＤ型イメージセンサやＣＭＯＳ型イメージセンサと呼ばれる各種の固体撮像装置及びその製造方法に関し、特に撮像素子を形成した半導体チップを湾曲させることにより、結合光学系による像面湾曲を吸収するパッケージ構造を有する固体撮像装置及びその製造方法に関する。
【０００２】
【従来の技術】
近年、特に携帯性を重視した電子機器等では、市場において小型化、軽量化、および低コスト化が求められており、例えばプラスティック製の一枚レンズが用いられる（なお、このような結像光学系の現象を像面湾曲という）。
しかし、一枚レンズによって結像される結像面は、レンズの材質によらず、湾曲面を描いており、固体撮像素子の受光面が平面状であることから、受光面とレンズによる結像面とを全体的に一致させるようなピント調整を行うことが困難となる。
このため、例えば受光面の中心部を重視してピント調整した場合、結果として周辺がボケた画質が得られるようになり、また、例えば受光面の周辺部を重視してピント調整した場合、結果として、中心部がボケた画質となって、一枚レンズでは優れた画質を得ることができなかった。
【０００３】
また、このような結像光学系の像面湾曲に対応する方法として、複数枚、たとえば、二枚レンズを用いる方法も考えられる。
しかしながら、この場合には、二枚レンズを設けることによる大幅なコストアップ、および、光路長が長くなってカメラモジュールが大型になってしまい、適用される用途が限定されてしまうことになる。
【０００４】
そこで、このような問題に対し、固体撮像素子の受光面を湾曲させることにより、結像光学系の像面湾曲を吸収し、受光面全体でピントの合った画像が得られるような固体撮像装置が提案されている（例えば、特許文献１、特許文献２）。
【０００５】
【特許文献１】
特開２００１−１５６２７８号公報
【特許文献２】
特開２００１−２８４５６４号公報
【０００６】
図３は、このような固体撮像素子の受光面を湾曲させた固体撮像装置のパッケージ構造の一例を示す断面図である。
この固体撮像装置は、固体撮像素子を形成した薄板状の半導体チップ１０と、この半導体チップ１０を所定の曲率で湾曲させた状態で装着するための湾曲装着面２０Ａを有するパッケージ本体２０と、半導体チップ１０が装着されたパッケージ本体２０を封止する透明なカバー体３０とを有している。
【０００７】
半導体チップ１０は、チップ表面（図中上面側）の中央領域に固体撮像素子の受光面が形成されており、その外側に電極パッドが配置されている。
また、パッケージ本体２０は、例えばセラミック製の容器状に形成され、半導体チップ１０を装着する湾曲装着面２０Ａの周辺に配線パターンが形成されている。なお、半導体チップ１０の受光面、電極パッド、並びにパッケージ本体２０の配線パターン等については、図示は省略している。
そして、半導体チップ１０の電極パッドとパッケージ本体２０の配線とをワイヤ４０によってボンディングすることにより、固体撮像素子とパッケージ本体２０側の回路とを電気的に接続し、各種信号（制御信号や画像信号）のやり取りを行うようになっている。
【０００８】
図４は、図３に示す固体撮像装置のパッケージ化とワイヤボンドを行う場合の工程を示す断面図である。
まず、図４（ａ）（ｂ）に示すように、湾曲装着面２０Ａを有するパッケージ本体２０を用意し、このパッケージ本体２０の湾曲装着面２０Ａに沿って半導体チップ１０を湾曲させ、半導体チップ１０と湾曲装着面２０Ａとを密着させた状態で接着剤等によって接合固定する。
この場合、半導体チップ１０を湾曲装着面２０Ａに沿って湾曲させる方法としては、例えば図示のようにパッケージ本体２０の底部に設けた吸引孔２０Ｂを通して真空吸引を行い、湾曲装着面２０Ａ側に吸着させる方法や、図示しない治具等を用いて上方から押す圧力をかけ、湾曲装着面２０Ａ側に押し付ける方法を用いることが可能である。
次に、図４（ｃ）に示すように、半導体チップ１０側の電極パッドとパッケージ本体２０側の電極パッドとを図示しないワイヤボンダによってワイヤ４０で接続する。
最後に、図４（ｄ）に示すように、パッケージ本体２０の上面にカバー体３０を装着し、パッケージ本体２０内の半導体チップ１０を封止する。
【０００９】
【発明が解決しようとする課題】
しかしながら、上記図３及び図４に示す従来技術では、半導体チップ１０をパッケージ本体２０の湾曲装着面２０Ａに装着した状態で、湾曲した半導体チップ１０に対してワイヤボンド作業を行うことになり、半導体チップ１０の湾曲によって傾いた電極パッドにワイヤボンダ用ツール（キャピラリ）が当接することになる。
このため、半導体チップ１０の電極パッドとワイヤボンダ用ツールとの接触状態が片当り状態となり、高速作業に伴って接続不良が生じたり、局所的な衝撃がかかって電極パッドや半導体チップ１０自体の損傷を招く原因となる。
また、薄板状の半導体チップ１０をパッケージ本体２０の湾曲装着面２０Ａに直接当接させて湾曲させることから、局所的に過大な応力が生じ、半導体チップ１０の割れを招き易いという問題もある。
【００１０】
そこで本発明の目的は、半導体チップを湾曲させたり、ワイヤボンド作業を行う際に生じる半導体チップの損傷や接続不良を有効に防止でき、半導体チップを湾曲させて結像光学系による像面湾曲を吸収する構成において信頼性の向上や歩留の向上を図ることが可能な固体撮像装置及びその製造方法を提供することにある。
【００１１】
【課題を解決するための手段】
本発明は前記目的を達成するため、表面に固体撮像素子の受光面を形成した薄板状の半導体チップと、前記半導体チップを所定の曲率で湾曲させた状態で装着するための湾曲装着面を有するパッケージ本体と、前記半導体チップの裏面に接合されて前記半導体チップと一体に湾曲され、前記半導体チップとパッケージ本体の湾曲装着面との間に介在配置される薄板状の中間補強材とを有することを特徴とする。
【００１２】
また本発明は、表面に固体撮像素子の受光面を形成した薄板状の半導体チップの裏面に、前記半導体チップと接続されるフレキシブル配線基板である薄板状の中間補強材を接合し、平坦な状態で前記半導体チップの端子と中間補強材の配線とのワイヤボンドを行う第１の工程と、前記半導体チップ及び中間補強材を一体に湾曲させ、パッケージ本体に形成した湾曲装着面に装着、固定する第２の工程とを有することを特徴とする。
【００１３】
また本発明は、表面に固体撮像素子の受光面を形成した薄板状の半導体チップの裏面に薄板状の中間補強材を接合する第１の工程と、前記半導体チップ及び中間補強材を一体に湾曲させ、パッケージ本体に形成した湾曲装着面に装着、固定する第２の工程と、前記半導体チップの端子と前記中間補強材またはパッケージ本体の少なくとも一方に設けた配線とのワイヤボンドを行う第３の工程とを有することを特徴とする。
【００１４】
本発明の固体撮像装置では、湾曲した薄板状の半導体チップとパッケージ本体の湾曲装着面との間に、半導体チップと一体化された薄板状の中間補強材を介在配置させたことから、半導体チップの湾曲時に中間補強材によって補強され、また、半導体チップが直接パッケージ本体に当接することもなくなるため、半導体チップが中間補強材によって保護され、割れ等の損傷を防止できる。
また、半導体チップのワイヤボンド時にも、ワイヤボンダによって半導体チップにかかる衝撃を中間補強材によって吸収、緩和でき、ワイヤボンダによる半導体チップ自体あるいは電極パッドの損傷を防止できる。
この結果、半導体チップの湾曲によって結像光学系による像面湾曲を吸収した固体撮像装置における信頼性の向上や歩留の向上を図ることが可能となる。
【００１５】
また本発明の製造方法では、半導体チップとそのフレキシブル配線基板である中間補強材を接合し、平坦な状態で半導体チップと中間補強材とをワイヤボンドで接続した後、この半導体チップ及び中間補強材を一体に湾曲させ、パッケージ本体の湾曲装着面に装着、固定することから、平坦な状態でワイヤボンド作業を行え、ワイヤボンダによる半導体チップ自体あるいは電極パッドの損傷を防止できる。
また、半導体チップの湾曲時にも中間補強材によって補強され、また、半導体チップが直接パッケージ本体に当接することもなくなるため、半導体チップが中間補強材によって保護され、割れ等の損傷を防止できる。
この結果、半導体チップの湾曲によって結像光学系による像面湾曲を吸収した固体撮像装置の製造工程における信頼性の向上や歩留の向上を図ることが可能となる。
【００１６】
また本発明の製造方法では、半導体チップと中間補強材を接合した状態で一体に湾曲させ、パッケージ本体の湾曲装着面に装着、固定し、その後、半導体チップのワイヤボンドを行うことから、半導体チップの湾曲時には中間補強材によって補強され、また、半導体チップが直接パッケージ本体に当接することもなくなるため、半導体チップが中間補強材によって保護され、割れ等の損傷を防止できる。
また、半導体チップのワイヤボンド時にも、ワイヤボンダによって半導体チップにかかる衝撃を中間補強材によって吸収、緩和でき、ワイヤボンダによる半導体チップ自体あるいは電極パッドの損傷を防止できる。
この結果、半導体チップの湾曲によって結像光学系による像面湾曲を吸収した固体撮像装置の製造工程における信頼性の向上や歩留の向上を図ることが可能となる。
【００１７】
【発明の実施の形態】
以下、本発明による固体撮像装置及びその製造方法の実施の形態例について説明する。
図１は、本発明の実施の形態例による固体撮像装置のパッケージ構造の一例を示す断面図である。
この固体撮像装置は、固体撮像素子を形成した薄板状の半導体チップ１１０と、この半導体チップ１１０の裏面に接合される薄板状の中間補強材１４０と、この半導体チップ１１０及び中間補強材１４０を所定の曲率で湾曲させた状態で装着するための湾曲装着面１２０Ａを有するパッケージ本体１２０と、半導体チップ１１０が装着されたパッケージ本体１２０を封止する透明なガラス等によるカバー体１３０とを有している。
【００１８】
半導体チップ１１０は、例えば２０〜３０μｍ程度の膜厚を有する方形薄板状に形成されており、チップ表面（図中上面側）の中央領域に固体撮像素子の画素を２次元アレイ状に集積した受光面を有し、その外側にチップ外と各種信号を入出力するための電極パッドが配置されている。
また、中間補強材１４０は、例えば数１０μｍの膜厚を有する方形薄板状の可撓自在な絶縁性シート体、例えばプラスチップフィルムを主体とするものであり、半導体チップ１１０の裏面に接着剤（接着手段）等によって接合され、半導体チップ１１０と一体化されて湾曲されたものである。そして、本例の中間補強材１４０は、プラスチックフィルム上に配線パターンを設けたフレキシブル配線基板として形成されている。
【００１９】
また、図１に示すように、本例の中間補強材１４０は、パッケージ本体１２０をカバー体１３０で封止する際に、このカバー体１３０の外周部とパッケージ本体１２０の外周部との間に挟持されるような構造で配置されている。
そして、図１に示す例では、中間補強材１４０上の配線と半導体チップ１１０上の電極パッドとがワイヤ１４２によってボンディングされている。また、中間補強材１４０の外周部は、上述のようにカバー体１３０とパッケージ本体１２０の間からパッケージの外側に露出しており、この露出部分に設けたコネクタ（図示せず）等を用いてパッケージ外との接続を行うような構成となっている。
【００２０】
また、パッケージ本体１２０は、例えばセラミック製の容器状に形成され、半導体チップ１１０及び中間補強材１４０を装着する湾曲装着面１２０Ａを有している。
また、パッケージ本体１２０の底部には、吸引孔１２０Ｂが形成されており、この吸引孔１２０Ｂを介して半導体チップ１１０及び中間補強材１４０を真空吸引することにより、半導体チップ１１０及び中間補強材１４０を湾曲装着面１２０Ａ側に湾曲させる。
【００２１】
また、図１では省略しているが、パッケージ本体１２０の外周部（湾曲装着面１２０Ａの外側領域）には位置合わせ用の突起が形成され、中間補強材１４０の外周部（半導体チップの外側領域）にはパッケージ本体１２０の突起が挿入される位置合わせ用の孔が形成されている。
なお、これら位置合わせ用の突起と孔は、パッケージ本体１２０及び中間補強材１４０の外周部に沿って複数箇所（例えば各コーナー部や各辺）に配置されており、パッケージ本体１２０と中間補強材１４０（及び半導体チップ１１０）を容易かつ正確に位置合わせして組み立てられるようになっている。
【００２２】
なお、図１に示す構造例、及び後述する図２に示す製造方法の例では、半導体チップ１１０を必ず中間補強材１４０にワイヤボンドする構成であるので、この中間補強材１４０にフレキシブル配線基板を用いることが有効であるが、半導体チップ１１０をワイヤボンドする相手としては、中間補強材１４０でなく、パッケージ本体１２０側に配線を設けてワイヤボンドすることも可能である。
すなわち、半導体チップ１１０及び中間補強材１４０をパッケージ本体１２０に装着した後にワイヤボンドを行うことも可能であることから、半導体チップ１１０及び中間補強材１４０をパッケージ本体１２０に装着した後、半導体チップ１１０とパッケージ本体１２０とをワイヤボンドすることができる。
【００２３】
この場合、半導体チップ１１０が湾曲した状態でワイヤボンドを行うことになるため、従来技術で説明したように、ワイヤボンダ用ツール（キャピラリ）が半導体チップ１１０に損傷を与える恐れも生じるが、本例では、半導体チップ１１０の下面に密着性及び弾力性のある中間補強材１４０を配置しているため、ワイヤボンダ用ツールによる局所的な衝撃を吸収でき、半導体チップ１１０の損傷を防止することが期待できる。
そして、このように半導体チップ１１０をパッケージ本体１２０にワイヤボンドする場合には、中間補強材１４０に配線を持たないものを用いることも可能であるため、図１に示す中間補強材１４０は、必ずしもフレキシブル配線基板には限定されないものとする。
【００２４】
また、中間補強材１４０の強度や膜厚については、あまり柔らかいものや変形量の大きいものを用いた場合には、半導体チップ１１０をワイヤボンダで結線する際に、半導体チップ１１０がかえって損傷し易くなることも考えられるため、中間補強材１４０の材質や膜厚、強度等の特性については、例えば各種のサンプルを用いて試作実験を行い、試作品が最も良好な特性や歩留等を得ることができる最適なものを選択するような方法を用いて決定することが可能である。
また、半導体チップ１１０及び中間補強材１４０を湾曲する場合、一定の温度で加熱して湾曲作業を行うことになるが、この加熱及びその後の冷却に際して、半導体チップ１１０と中間補強材１４０の線膨張係数の差によって、より湾曲が容易となるような材質を選ぶようにすることも有効である。
また、パッケージ本体１２０は、全体的にセラミックで形成されたものに限らず、例えば金属製の容器に湾曲装着面１２０Ａの部分だけを絶縁性のセラミック等の材料によって形成して接合したような構造のものであってもよい。
また、上述の例では、真空吸引によって半導体チップ１１０及び中間補強材１４０を湾曲装着面１２０Ａ側に湾曲させているが、半導体チップ１１０及び中間補強材１４０を湾曲装着面１２０Ａ側に押圧することにより、湾曲させるような方法を採用してもよい。
【００２５】
以上のような構成の固体撮像装置では、半導体チップ１１０とパッケージ本体１２０の湾曲装着面１２０Ａとの間に、半導体チップ１１０と一体化された中間補強材１４０を介在配置させたことから、半導体チップ１１０の湾曲時に中間補強材１４０によって補強され、また、半導体チップ１１０が直接パッケージ本体１２０に当接することもなくなるため、半導体チップ１１０が中間補強材１２０によって保護され、割れ等の損傷を防止できる。
また、半導体チップ１１０のワイヤボンド時にも、ワイヤボンダによって半導体チップ１１０にかかる衝撃を中間補強材１４０によって吸収、緩和でき、ワイヤボンダによる半導体チップ１１０自体あるいは電極パッドの損傷を防止できる。
この結果、半導体チップ１１０を湾曲させることによって結像光学系による像面湾曲を吸収するようにした固体撮像装置において、信頼性の向上や歩留の向上を図ることが可能となる。
【００２６】
図２は、図１に示す固体撮像装置のパッケージ化とワイヤボンドを行う場合の製造工程の一例を示す断面図である。
まず、図２（ａ）に示すように、半導体チップ１１０と中間補強材１４０を位置合わせし、接着剤等によって接合する。そして、半導体チップ１１０と中間補強材１４０とを平坦な状態のままで、ワイヤボンダによるワイヤボンド作業を行い、半導体チップ１１０の電極パッドと中間補強材１４０の配線とをワイヤ１４２によって結線する。このように本例では、半導体チップ１１０と中間補強材１４０とを平坦に重ねてワイヤボンドを行うことにより、半導体チップ１１０の損傷を招くことなく、また、信頼性の高い結線状態を確保できる。
【００２７】
次に、図２（ｂ）に示すように、このような半導体チップ１１０及び中間補強材１４０をパッケージ本体１２０の上面に位置決め配置する。これは上述したパッケージ本体１２０の位置合わせ用の突起１２１を中間補強材１４０の位置合わせ用の孔１４１に挿入するようにして、半導体チップ１１０及び中間補強材１４０をパッケージ本体１２０の上面に装着することにより、容易に位置合わせできるものである。
そして、図２（ｃ）に示すように、半導体チップ１１０及び中間補強材１４０をパッケージ本体１２０の湾曲装着面１２０Ａに沿って一体に湾曲させる。これは上述した真空吸引で行ってもよいし、押圧変形によって行ってもよい。図示の例は、吸引孔１２０Ｂにより真空吸引で行う場合を示している。また、湾曲作業は一定の温度で加熱して行うことになる。
このように本例では、半導体チップ１１０と中間補強材１４０とを一体な状態で湾曲させることで、半導体チップ１１０の割れ等を有効に防止できる。
また、この湾曲時に、例えば湾曲装着面１２０Ａの表面に接着剤を塗布しておくことにより、湾曲後の半導体チップ１１０と中間補強材１４０を湾曲装着面１２０Ａに密着させた状態で確実に固定することが可能である。
【００２８】
次に、図２（ｄ）に示すように、中間補強材１４０の外周部を介してカバー体１３０をパッケージ本体１２０の上面に装着し、パッケージの内部を封止した後、最後に図２（ｅ）に示すように、パッケージの外部にはみ出した中間補強材１４０の外周部を切断し、パッケージ化された固体撮像装置を完成する。
【００２９】
なお、以上のような図２に示す製造工程では、半導体チップ１１０と中間補強材１４０のワイヤボンドを行った後、パッケージ本体１２０に湾曲させて装着したが、半導体チップ１１０と中間補強材１４０をパッケージ本体１２０に湾曲させて装着した後、半導体チップ１１０と中間補強材１４０のワイヤボンドを行うことも可能である。
この場合、半導体チップ１１０及び中間補強材１４０の湾曲傾斜面にワイヤボンドを行うことになるが、上述のように密着性と弾力性を有する中間補強材１４０を配置したことで、直接パッケージ本体に装着した従来の構成に比べて、半導体チップ１１０の損傷を有効に防止でき、生産性や信頼性の面で十分な効果を得られるものである。
【００３０】
また、このように半導体チップ１１０と中間補強材１４０との間でワイヤボンドを行う代わりに、半導体チップ１１０とパッケージ本体１２０との間でワイヤボンドを行うような構成であってもよい。
この場合には、中間補強材１４０を小さい幅に形成し、半導体チップ１１０と中間補強材１４０をパッケージ本体１２０に装着した状態で、パッケージ本体１２０に設けた配線部分が上方に露出するような構造とすることで、半導体チップ１１０の電極パッドとパッケージ本体１２０の配線のワイヤボンドを行うことになる。
【００３１】
また、上述した例では、カバー体１３０によってパッケージ本体１２０を封止する構成例を説明したが、このようなカバー体を持たない構造のものであってもよい。
さらに、上述した実施の形態例は、本発明を具体例で限定的に説明したものであり、本発明は上述した実施の形態例に限定されず、例えば各部材の材質や寸法等は適宜選択し得るものである。
【００３２】
【発明の効果】
以上説明したように本発明の固体撮像装置によれば、湾曲した薄板状の半導体チップとパッケージ本体の湾曲装着面との間に、半導体チップと一体化された薄板状の中間補強材を介在配置させたことから、半導体チップの湾曲時に中間補強材によって補強され、また、半導体チップが直接パッケージ本体に当接することもなくなるため、半導体チップが中間補強材によって保護され、割れ等の損傷を防止でき、さらに半導体チップのワイヤボンド時にも、ワイヤボンダによって半導体チップにかかる衝撃を中間補強材によって吸収、緩和でき、ワイヤボンダによる半導体チップ自体あるいは電極パッドの損傷を防止できる。
この結果、半導体チップの湾曲によって結像光学系による像面湾曲を吸収した固体撮像装置における信頼性の向上や歩留の向上を図ることが可能となる。
【００３３】
また本発明の製造方法によれば、半導体チップとそのフレキシブル配線基板である中間補強材を接合し、平坦な状態で半導体チップと中間補強材とをワイヤボンドで接続した後、この半導体チップ及び中間補強材を一体に湾曲させ、パッケージ本体の湾曲装着面に装着、固定することから、平坦な状態でワイヤボンド作業を行え、ワイヤボンダによる半導体チップ自体あるいは電極パッドの損傷を防止でき、さらに、半導体チップの湾曲時にも中間補強材によって補強され、また、半導体チップが直接パッケージ本体に当接することもなくなるため、半導体チップが中間補強材によって保護され、割れ等の損傷を防止できる。
この結果、半導体チップの湾曲によって結像光学系による像面湾曲を吸収した固体撮像装置の製造工程における信頼性の向上や歩留の向上を図ることが可能となる。
【００３４】
また本発明の製造方法によれば、半導体チップと中間補強材を接合した状態で一体に湾曲させ、パッケージ本体の湾曲装着面に装着、固定し、その後、半導体チップのワイヤボンドを行うことから、半導体チップの湾曲時には中間補強材によって補強され、また、半導体チップが直接パッケージ本体に当接することもなくなるため、半導体チップが中間補強材によって保護され、割れ等の損傷を防止でき、さらに、半導体チップのワイヤボンド時にも、ワイヤボンダによって半導体チップにかかる衝撃を中間補強材によって吸収、緩和でき、ワイヤボンダによる半導体チップ自体あるいは電極パッドの損傷を防止できる。
この結果、半導体チップの湾曲によって結像光学系による像面湾曲を吸収した固体撮像装置の製造工程における信頼性の向上や歩留の向上を図ることが可能となる。
【図面の簡単な説明】
【図１】本発明の実施の形態例による固体撮像装置のパッケージ構造の一例を示す断面図である。
【図２】図１に示す固体撮像装置のパッケージ化とワイヤボンドを行う場合の製造工程の一例を示す断面図である。
【図３】従来の固体撮像装置のパッケージ構造の一例を示す断面図である。
【図４】図３に示す固体撮像装置のパッケージ化とワイヤボンドを行う場合の製造工程の一例を示す断面図である。
【符号の説明】
１１０……半導体チップ、１２０……パッケージ本体、１２０Ａ……湾曲装着面、１２０Ｂ……吸引孔、１２１……位置合わせ用の突起、１３０……カバー体、１４０……中間補強材、１４１……位置合わせ用の孔。[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to various solid-state imaging devices called, for example, a CCD image sensor or a CMOS image sensor and a method for manufacturing the same, and in particular, a semiconductor chip on which an imaging element is formed is bent to absorb a field curvature caused by a coupling optical system. The present invention relates to a solid-state imaging device having a package structure and a method of manufacturing the same.
[0002]
[Prior art]
In recent years, particularly in electronic devices and the like that emphasize portability, miniaturization, weight reduction, and cost reduction have been demanded in the market. For example, a single lens made of plastic is used. The phenomenon of the system is called field curvature).
However, the image plane formed by a single lens has a curved surface regardless of the material of the lens, and since the light receiving surface of the solid-state image sensor is planar, the image formed by the light receiving surface and the lens is formed. It is difficult to perform a focus adjustment so that the entire surface is coincident with the surface.
For this reason, for example, when focusing is performed with emphasis on the center of the light receiving surface, as a result, a blurred image quality is obtained at the periphery, and, for example, when focusing is performed with emphasis on the periphery of the light receiving surface, the result is As a result, the image quality was blurred at the center, and excellent image quality could not be obtained with a single lens.
[0003]
Further, as a method corresponding to such a field curvature of the image forming optical system, a method using a plurality of, for example, two lenses can be considered.
However, in this case, the cost is greatly increased by providing two lenses, and the optical path length is increased to increase the size of the camera module, which limits the application to which the camera module is applied.
[0004]
In order to solve such a problem, the solid-state imaging device is configured such that the light-receiving surface of the solid-state imaging element is curved to absorb the curvature of field of the imaging optical system, and an in-focus image can be obtained on the entire light-receiving surface. (For example, Patent Documents 1 and 2).
[0005]
[Patent Document 1]
JP 2001-156278 A [Patent Document 2]
JP 2001-284564 A
FIG. 3 is a cross-sectional view illustrating an example of a package structure of a solid-state imaging device in which the light-receiving surface of such a solid-state imaging device is curved.
The solid-state imaging device includes a package body 20 having a thin semiconductor chip 10 having a solid-state imaging device formed thereon, a curved mounting surface 20A for mounting the semiconductor chip 10 in a state of being curved at a predetermined curvature, and a semiconductor device. A transparent cover 30 that seals the package body 20 on which the chip 10 is mounted.
[0007]
The semiconductor chip 10 has a light receiving surface of a solid-state imaging device formed in a central region on the chip surface (the upper surface side in the drawing), and electrode pads are arranged outside the light receiving surface.
The package body 20 is formed, for example, in a ceramic container shape, and has a wiring pattern formed around a curved mounting surface 20A on which the semiconductor chip 10 is mounted. The illustration of the light receiving surface of the semiconductor chip 10, the electrode pads, the wiring pattern of the package body 20, and the like are omitted.
Then, by bonding the electrode pads of the semiconductor chip 10 and the wiring of the package body 20 with the wires 40, the solid-state imaging device and the circuit on the package body 20 side are electrically connected, and various signals (control signals and image signals) are connected. ).
[0008]
FIG. 4 is a cross-sectional view showing a process of packaging the solid-state imaging device shown in FIG. 3 and performing wire bonding.
First, as shown in FIGS. 4A and 4B, a package body 20 having a curved mounting surface 20A is prepared, and the semiconductor chip 10 is bent along the curved mounting surface 20A of the package body 20. And the curved mounting surface 20A are adhered and fixed with an adhesive or the like in a state where they are in close contact with each other.
In this case, as a method of bending the semiconductor chip 10 along the curved mounting surface 20A, for example, vacuum suction is performed through a suction hole 20B provided at the bottom of the package body 20 as shown in the drawing, and the semiconductor chip 10 is sucked to the curved mounting surface 20A side. It is possible to use a method or a method in which a pressing force is applied from above using a jig or the like (not shown) and pressed against the curved mounting surface 20A side.
Next, as shown in FIG. 4C, the electrode pads on the semiconductor chip 10 side and the electrode pads on the package body 20 side are connected by wires 40 using a wire bonder (not shown).
Finally, as shown in FIG. 4D, the cover body 30 is mounted on the upper surface of the package body 20, and the semiconductor chip 10 in the package body 20 is sealed.
[0009]
[Problems to be solved by the invention]
However, in the prior art shown in FIGS. 3 and 4, the semiconductor chip 10 is mounted on the curved mounting surface 20A of the package body 20, and the wire bonding operation is performed on the curved semiconductor chip 10. The wire bonder tool (capillary) comes into contact with the electrode pad inclined by the curvature of the chip 10.
For this reason, the contact state between the electrode pad of the semiconductor chip 10 and the wire bonder tool is a one-sided contact state, and a connection failure occurs due to high-speed operation or a local impact is applied to damage the electrode pad or the semiconductor chip 10 itself. Cause
In addition, since the thin semiconductor chip 10 is directly brought into contact with the curved mounting surface 20A of the package body 20 and is bent, an excessive stress is locally generated, and there is a problem that the semiconductor chip 10 is easily cracked.
[0010]
Therefore, an object of the present invention is to be able to effectively prevent a semiconductor chip from being damaged or a connection failure occurring when a semiconductor chip is bent or a wire bonding operation is performed. An object of the present invention is to provide a solid-state imaging device capable of improving reliability and yield in an absorbing configuration and a method of manufacturing the same.
[0011]
[Means for Solving the Problems]
In order to achieve the above object, the present invention has a thin semiconductor chip having a light receiving surface of a solid-state imaging device formed on a surface thereof, and a curved mounting surface for mounting the semiconductor chip in a state of being curved at a predetermined curvature. A package main body, and a thin plate-like intermediate reinforcing member that is joined to the back surface of the semiconductor chip, is integrally curved with the semiconductor chip, and is interposed between the semiconductor chip and a curved mounting surface of the package main body. It is characterized by.
[0012]
Further, according to the present invention, a thin plate-like intermediate reinforcing material, which is a flexible wiring board connected to the semiconductor chip, is joined to a back surface of a thin plate-like semiconductor chip having a light receiving surface of a solid-state imaging device formed on a front surface thereof. A first step of performing wire bonding between the terminals of the semiconductor chip and the wiring of the intermediate reinforcing material, and integrally bending the semiconductor chip and the intermediate reinforcing material, and mounting and fixing the semiconductor chip and the intermediate reinforcing material on a curved mounting surface formed on the package body. And a second step.
[0013]
The present invention also provides a first step of joining a thin plate-shaped intermediate reinforcing member to the back surface of a thin semiconductor chip having a light receiving surface of a solid-state imaging device formed on the front surface, and integrally bending the semiconductor chip and the intermediate reinforcing member. A second step of attaching and fixing to the curved attachment surface formed in the package body, and a third step of performing wire bonding between the terminal of the semiconductor chip and the wiring provided on at least one of the intermediate reinforcing member and the package body. And a process.
[0014]
In the solid-state imaging device of the present invention, a thin plate-shaped intermediate reinforcing member integrated with the semiconductor chip is interposed between the curved thin semiconductor chip and the curved mounting surface of the package body. When the semiconductor chip is bent, the semiconductor chip is reinforced by the intermediate reinforcing material, and the semiconductor chip does not directly contact the package body. Therefore, the semiconductor chip is protected by the intermediate reinforcing material, and damage such as cracks can be prevented.
Also, at the time of wire bonding of the semiconductor chip, the impact applied to the semiconductor chip by the wire bonder can be absorbed and reduced by the intermediate reinforcing material, and damage to the semiconductor chip itself or the electrode pad by the wire bonder can be prevented.
As a result, it is possible to improve the reliability and the yield of the solid-state imaging device in which the curvature of the image formed by the imaging optical system is absorbed by the curvature of the semiconductor chip.
[0015]
Further, in the manufacturing method of the present invention, the semiconductor chip and the intermediate reinforcing material which is a flexible wiring board thereof are joined, and the semiconductor chip and the intermediate reinforcing material are connected by wire bonding in a flat state. Are integrally bent, and mounted and fixed on the curved mounting surface of the package body, so that the wire bonding operation can be performed in a flat state, and damage to the semiconductor chip itself or the electrode pads by the wire bonder can be prevented.
Further, even when the semiconductor chip is bent, the semiconductor chip is reinforced by the intermediate reinforcing material, and the semiconductor chip does not come into direct contact with the package body. Therefore, the semiconductor chip is protected by the intermediate reinforcing material, and damage such as cracking can be prevented.
As a result, it is possible to improve the reliability and the yield in the manufacturing process of the solid-state imaging device in which the curvature of the image formed by the imaging optical system is absorbed by the curvature of the semiconductor chip.
[0016]
Further, in the manufacturing method of the present invention, the semiconductor chip and the intermediate reinforcing material are integrally bent in a joined state, mounted and fixed on the curved mounting surface of the package body, and thereafter, the semiconductor chip is wire-bonded. When the semiconductor chip is curved, the semiconductor chip is reinforced by the intermediate reinforcing material, and the semiconductor chip does not directly contact the package body. Therefore, the semiconductor chip is protected by the intermediate reinforcing material, and damage such as cracks can be prevented.
Also, at the time of wire bonding of the semiconductor chip, the impact applied to the semiconductor chip by the wire bonder can be absorbed and reduced by the intermediate reinforcing material, and damage to the semiconductor chip itself or the electrode pad by the wire bonder can be prevented.
As a result, it is possible to improve the reliability and the yield in the manufacturing process of the solid-state imaging device in which the curvature of the image formed by the imaging optical system is absorbed by the curvature of the semiconductor chip.
[0017]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of a solid-state imaging device and a method of manufacturing the same according to the present invention will be described.
FIG. 1 is a cross-sectional view illustrating an example of a package structure of a solid-state imaging device according to an embodiment of the present invention.
This solid-state imaging device includes a thin semiconductor chip 110 on which a solid-state imaging device is formed, a thin intermediate reinforcing member 140 bonded to the back surface of the semiconductor chip 110, and a semiconductor chip 110 and an intermediate reinforcing member 140 which are formed by a predetermined method. A package body 120 having a curved mounting surface 120A for mounting in a state where the semiconductor chip 110 is mounted, and a cover body 130 made of transparent glass or the like that seals the package body 120 on which the semiconductor chip 110 is mounted. I have.
[0018]
The semiconductor chip 110 is formed in a rectangular thin plate shape having a thickness of, for example, about 20 to 30 μm, and a light receiving element in which pixels of a solid-state imaging device are integrated in a two-dimensional array in a central region on the chip surface (upper side in the drawing). An electrode pad for inputting and outputting various signals to and from the outside of the chip is arranged outside the surface.
Further, the intermediate reinforcing member 140 is mainly composed of a square thin plate-like flexible insulating sheet body having a thickness of, for example, several tens of μm, for example, a plus chip film, and an adhesive ( They are joined by bonding means) or the like, are integrated with the semiconductor chip 110, and are curved. The intermediate reinforcing member 140 of the present example is formed as a flexible wiring board having a wiring pattern provided on a plastic film.
[0019]
As shown in FIG. 1, when the package body 120 is sealed with the cover body 130, the intermediate reinforcing member 140 of the present example is provided between the outer periphery of the cover body 130 and the outer periphery of the package body 120. They are arranged in such a way as to be pinched.
In the example shown in FIG. 1, the wiring on the intermediate reinforcing member 140 and the electrode pads on the semiconductor chip 110 are bonded by wires 142. Further, the outer peripheral portion of the intermediate reinforcing member 140 is exposed to the outside of the package from between the cover body 130 and the package body 120 as described above, and a connector (not shown) or the like provided on the exposed portion is used. It is configured to connect outside the package.
[0020]
The package body 120 is formed, for example, in a ceramic container shape, and has a curved mounting surface 120A on which the semiconductor chip 110 and the intermediate reinforcing member 140 are mounted.
Further, a suction hole 120B is formed at the bottom of the package body 120, and the semiconductor chip 110 and the intermediate reinforcing material 140 are vacuum-suctioned through the suction hole 120B, so that the semiconductor chip 110 and the intermediate reinforcing material 140 are separated. Curved toward the curved mounting surface 120A.
[0021]
Although not shown in FIG. 1, a projection for alignment is formed on the outer peripheral portion of the package main body 120 (the outer region of the curved mounting surface 120A), and the outer peripheral portion of the intermediate reinforcing member 140 (the outer region of the semiconductor chip). ) Are formed with positioning holes into which the protrusions of the package body 120 are inserted.
Note that these projections and holes for alignment are arranged at a plurality of positions (for example, at each corner or each side) along the outer peripheral portions of the package main body 120 and the intermediate reinforcing member 140, and the package main body 120 and the intermediate reinforcing member 140 (and the semiconductor chip 110) can be easily and accurately aligned and assembled.
[0022]
In the example of the structure shown in FIG. 1 and the example of the manufacturing method shown in FIG. 2 described later, since the semiconductor chip 110 is always wire-bonded to the intermediate reinforcing member 140, a flexible wiring board is attached to the intermediate reinforcing member 140. Although it is effective to use the semiconductor chip 110, it is also possible to wire-bond the semiconductor chip 110 by providing a wiring on the package body 120 side instead of the intermediate reinforcing member 140.
That is, since wire bonding can be performed after the semiconductor chip 110 and the intermediate reinforcing member 140 are mounted on the package body 120, the semiconductor chip 110 and the intermediate reinforcing member 140 And the package body 120 can be wire-bonded.
[0023]
In this case, since wire bonding is performed in a state where the semiconductor chip 110 is curved, there is a possibility that the wire bonding tool (capillary) may damage the semiconductor chip 110 as described in the related art. In addition, since the intermediate reinforcing material 140 having adhesiveness and elasticity is arranged on the lower surface of the semiconductor chip 110, it is possible to absorb a local impact caused by a wire bonder tool and to prevent the semiconductor chip 110 from being damaged.
When the semiconductor chip 110 is wire-bonded to the package body 120 in this manner, the intermediate reinforcing member 140 having no wiring can be used. Therefore, the intermediate reinforcing member 140 shown in FIG. It is not limited to a flexible wiring board.
[0024]
Also, regarding the strength and the film thickness of the intermediate reinforcing member 140, when a very soft material or a material having a large deformation amount is used, when the semiconductor chip 110 is connected with a wire bonder, the semiconductor chip 110 is easily damaged. Since it is conceivable that the properties, such as the material, thickness, and strength, of the intermediate reinforcing member 140, for example, a prototype experiment is performed using various samples, and the prototype can obtain the best properties, yield, and the like. The determination can be made using a method that selects the best possible one.
When the semiconductor chip 110 and the intermediate reinforcing member 140 are bent, the bending operation is performed by heating the semiconductor chip 110 and the intermediate reinforcing member 140 at a certain temperature. It is also effective to select a material that facilitates bending depending on the difference between the coefficients.
Further, the package body 120 is not limited to a structure entirely formed of ceramic, and has a structure in which, for example, only a curved mounting surface 120A is formed of a material such as insulating ceramic and joined to a metal container. It may be.
Further, in the above-described example, the semiconductor chip 110 and the intermediate reinforcing member 140 are bent toward the curved mounting surface 120A by vacuum suction, but the semiconductor chip 110 and the intermediate reinforcing member 140 are pressed toward the curved mounting surface 120A side. Alternatively, a method of bending may be employed.
[0025]
In the solid-state imaging device having the above configuration, the intermediate reinforcing member 140 integrated with the semiconductor chip 110 is interposed between the semiconductor chip 110 and the curved mounting surface 120A of the package body 120. Since the semiconductor chip 110 is reinforced by the intermediate reinforcing member 140 when the 110 is bent, and the semiconductor chip 110 does not directly contact the package body 120, the semiconductor chip 110 is protected by the intermediate reinforcing member 120, and damage such as cracking can be prevented.
Also, at the time of wire bonding of the semiconductor chip 110, the impact applied to the semiconductor chip 110 by the wire bonder can be absorbed and mitigated by the intermediate reinforcing member 140, and the semiconductor chip 110 itself or the electrode pad can be prevented from being damaged by the wire bonder.
As a result, in the solid-state imaging device in which the semiconductor chip 110 is curved to absorb the curvature of field caused by the imaging optical system, it is possible to improve the reliability and the yield.
[0026]
FIG. 2 is a cross-sectional view showing an example of a manufacturing process when packaging and wire bonding the solid-state imaging device shown in FIG.
First, as shown in FIG. 2A, the semiconductor chip 110 and the intermediate reinforcing member 140 are aligned and joined by an adhesive or the like. Then, while the semiconductor chip 110 and the intermediate reinforcing member 140 are kept flat, a wire bonding operation is performed by a wire bonder, and the electrode pads of the semiconductor chip 110 and the wiring of the intermediate reinforcing member 140 are connected by wires 142. As described above, in the present embodiment, the semiconductor chip 110 and the intermediate reinforcing member 140 are flatly overlapped and wire-bonded, so that the semiconductor chip 110 is not damaged and a highly reliable connection state can be secured.
[0027]
Next, as shown in FIG. 2B, the semiconductor chip 110 and the intermediate reinforcing member 140 are positioned and arranged on the upper surface of the package body 120. In this case, the semiconductor chip 110 and the intermediate reinforcing member 140 are mounted on the upper surface of the package main body 120 such that the positioning protrusions 121 of the package main body 120 described above are inserted into the positioning holes 141 of the intermediate reinforcing member 140. By doing so, the positioning can be easily performed.
Then, as shown in FIG. 2C, the semiconductor chip 110 and the intermediate reinforcing member 140 are integrally curved along the curved mounting surface 120A of the package body 120. This may be performed by the above-described vacuum suction or by pressing deformation. The illustrated example shows a case where vacuum suction is performed using the suction hole 120B. In addition, the bending operation is performed by heating at a constant temperature.
As described above, in the present example, the semiconductor chip 110 and the intermediate reinforcing member 140 are bent in an integrated state, so that the semiconductor chip 110 can be effectively prevented from cracking.
Further, at the time of this bending, for example, by applying an adhesive to the surface of the curved mounting surface 120A, the semiconductor chip 110 and the intermediate reinforcing material 140 after the bending are securely fixed in a state of being in close contact with the curved mounting surface 120A. It is possible.
[0028]
Next, as shown in FIG. 2D, the cover body 130 is mounted on the upper surface of the package body 120 via the outer peripheral portion of the intermediate reinforcing member 140, and the inside of the package is sealed. As shown in e), the outer peripheral portion of the intermediate reinforcing member 140 protruding outside the package is cut to complete a packaged solid-state imaging device.
[0029]
In the above-described manufacturing process shown in FIG. 2, the semiconductor chip 110 and the intermediate reinforcing member 140 are wire-bonded, and then the semiconductor chip 110 and the intermediate reinforcing member 140 are bent and mounted. After being bent and mounted on the package body 120, the semiconductor chip 110 and the intermediate reinforcing member 140 can be wire-bonded.
In this case, wire bonding is performed on the curved inclined surface of the semiconductor chip 110 and the intermediate reinforcing member 140. However, by disposing the intermediate reinforcing member 140 having adhesion and elasticity as described above, it is directly attached to the package body. As compared with the conventional configuration in which the semiconductor chip 110 is mounted, damage to the semiconductor chip 110 can be effectively prevented, and sufficient effects can be obtained in terms of productivity and reliability.
[0030]
Further, instead of performing the wire bonding between the semiconductor chip 110 and the intermediate reinforcing member 140 as described above, a configuration in which the wire bonding is performed between the semiconductor chip 110 and the package body 120 may be employed.
In this case, the intermediate reinforcing member 140 is formed to have a small width, and the wiring portion provided on the package main body 120 is exposed upward in a state where the semiconductor chip 110 and the intermediate reinforcing member 140 are mounted on the package main body 120. Accordingly, wire bonding between the electrode pads of the semiconductor chip 110 and the wiring of the package body 120 is performed.
[0031]
Further, in the above-described example, the configuration example in which the package body 120 is sealed with the cover body 130 has been described, but a structure without such a cover body may be employed.
Furthermore, in the above-described embodiment, the present invention is described in a limited manner by the specific example, and the present invention is not limited to the above-described embodiment, and for example, the material and dimensions of each member are appropriately selected. Can be done.
[0032]
【The invention's effect】
As described above, according to the solid-state imaging device of the present invention, the thin plate-shaped intermediate reinforcing member integrated with the semiconductor chip is interposed between the curved thin plate-shaped semiconductor chip and the curved mounting surface of the package body. Since the semiconductor chip is reinforced by the intermediate reinforcing material when the semiconductor chip is bent, and the semiconductor chip does not directly contact the package body, the semiconductor chip is protected by the intermediate reinforcing material and damage such as cracks can be prevented. Further, even during wire bonding of the semiconductor chip, the impact applied to the semiconductor chip by the wire bonder can be absorbed and reduced by the intermediate reinforcing material, and damage to the semiconductor chip itself or the electrode pad by the wire bonder can be prevented.
As a result, it is possible to improve the reliability and the yield of the solid-state imaging device in which the curvature of the image formed by the imaging optical system is absorbed by the curvature of the semiconductor chip.
[0033]
Further, according to the manufacturing method of the present invention, the semiconductor chip and the intermediate reinforcing material that is a flexible wiring board thereof are joined, and the semiconductor chip and the intermediate reinforcing material are connected by wire bonding in a flat state. Since the reinforcing material is bent integrally, and mounted and fixed on the curved mounting surface of the package body, wire bonding can be performed in a flat state, and damage to the semiconductor chip itself or the electrode pads by the wire bonder can be prevented. When the semiconductor chip is bent, the semiconductor chip is reinforced by the intermediate reinforcing member, and the semiconductor chip does not directly contact the package body. Therefore, the semiconductor chip is protected by the intermediate reinforcing member, and damage such as cracking can be prevented.
As a result, it is possible to improve the reliability and the yield in the manufacturing process of the solid-state imaging device in which the curvature of the image formed by the imaging optical system is absorbed by the curvature of the semiconductor chip.
[0034]
Further, according to the manufacturing method of the present invention, the semiconductor chip and the intermediate reinforcing material are integrally bent in a joined state, mounted on the curved mounting surface of the package body, fixed, and thereafter, the semiconductor chip is wire-bonded. When the semiconductor chip is bent, the semiconductor chip is reinforced by the intermediate reinforcing material, and the semiconductor chip does not directly contact the package body. Therefore, the semiconductor chip is protected by the intermediate reinforcing material, and damage such as cracks can be prevented. During the wire bonding, the impact applied to the semiconductor chip by the wire bonder can be absorbed and mitigated by the intermediate reinforcing material, and the semiconductor chip itself or the electrode pads can be prevented from being damaged by the wire bonder.
As a result, it is possible to improve the reliability and the yield in the manufacturing process of the solid-state imaging device in which the curvature of the image formed by the imaging optical system is absorbed by the curvature of the semiconductor chip.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view illustrating an example of a package structure of a solid-state imaging device according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view illustrating an example of a manufacturing process when packaging and wire bonding the solid-state imaging device illustrated in FIG. 1;
FIG. 3 is a cross-sectional view illustrating an example of a package structure of a conventional solid-state imaging device.
FIG. 4 is a cross-sectional view illustrating an example of a manufacturing process when packaging and wire bonding the solid-state imaging device illustrated in FIG. 3;
[Explanation of symbols]
110: semiconductor chip, 120: package body, 120A: curved mounting surface, 120B: suction hole, 121: positioning projection, 130: cover body, 140: intermediate reinforcing material, 141 ... Hole for alignment.

Claims

A thin semiconductor chip having a light receiving surface of a solid-state imaging device formed on a surface thereof,
A package body having a curved mounting surface for mounting the semiconductor chip in a state of being curved at a predetermined curvature,
A thin plate-shaped intermediate reinforcing member that is joined to the back surface of the semiconductor chip, is integrally curved with the semiconductor chip, and is interposed between the semiconductor chip and the curved mounting surface of the package body;
A solid-state imaging device comprising:

The solid-state imaging device according to claim 1, further comprising a cover that seals a curved mounting surface of the package body on which the semiconductor chip and the intermediate reinforcing member are mounted.

The solid-state imaging device according to claim 1, wherein the intermediate reinforcing member is formed of a flexible insulating sheet.

The solid-state imaging device according to claim 1, wherein the intermediate reinforcing member is a flexible wiring board connected to the semiconductor chip.

2. The solid-state imaging device according to claim 1, wherein the package body has a wiring connected to the semiconductor chip, and a terminal of the semiconductor chip and a wiring of the package body are connected by wire bonding. 3.

The solid-state imaging device according to claim 1, wherein the semiconductor chip and the intermediate reinforcing member are integrally joined by an adhesive unit.

The solid-state imaging device according to claim 1, wherein the curved mounting surface, the semiconductor chip, and the intermediate reinforcing member of the package body are curved in a two-dimensional arc shape.

The solid-state imaging device according to claim 1, wherein the curved mounting surface, the semiconductor chip, and the intermediate reinforcing member of the package body are curved in a three-dimensional arc shape.

2. The solid-state imaging device according to claim 1, wherein a positioning projection is provided on the curved mounting surface of the package body, and a positioning hole for inserting the projection is formed in the intermediate reinforcing member. apparatus.

A plurality of positioning protrusions of the package main body are provided in a region outside the semiconductor chip arrangement region on the curved mounting surface, and the positioning holes of the intermediate reinforcing material correspond to the positioning protrusions. 13. The solid-state imaging device according to claim 12, wherein a plurality of the intermediate reinforcing members are provided in a region outside the semiconductor chip.

A thin plate-shaped intermediate reinforcing material, which is a flexible wiring board connected to the semiconductor chip, is bonded to the back surface of the thin semiconductor chip having the light receiving surface of the solid-state imaging device formed on the surface, and the semiconductor chip is flat. A first step of performing wire bonding between the terminal and the wiring of the intermediate reinforcing material;
A second step of integrally bending the semiconductor chip and the intermediate reinforcing material, and mounting and fixing the semiconductor chip and the intermediate reinforcing material on a curved mounting surface formed on the package body;
A method for manufacturing a solid-state imaging device, comprising:

12. The method according to claim 11, further comprising a third step of sealing a curved mounting surface of the package body on which the semiconductor chip and the intermediate reinforcing member are mounted with a cover body.

12. The method according to claim 11, wherein in the first step, the semiconductor chip and the intermediate reinforcing member are integrally joined by an adhesive unit.

12. The solid-state imaging device according to claim 11, wherein, in the second step, the semiconductor chip and the intermediate reinforcing material are brought into close contact with a curved mounting surface of the package body by vacuum suction, and then fixed by an adhesive unit. Production method.

12. The solid-state imaging device according to claim 11, wherein in the second step, the semiconductor chip and the intermediate reinforcing material are brought into close contact with the curved mounting surface of the package body by pressing, and then fixed by an adhesive unit. Method.

12. The method according to claim 11, wherein the curved mounting surface of the package body, the semiconductor chip, and the intermediate reinforcing member are curved in a two-dimensional arc.

The method according to claim 11, wherein the curved mounting surface, the semiconductor chip, and the intermediate reinforcing member of the package main body are curved in a three-dimensional arc shape.

In the second step, positioning is performed by a positioning projection provided on the curved mounting surface of the package body and a positioning hole provided in the intermediate reinforcing member, into which the projection is inserted. The method for manufacturing a solid-state imaging device according to claim 11.

A first step of joining a thin plate-like intermediate reinforcing material to the back surface of a thin plate-like semiconductor chip having a light receiving surface of a solid-state imaging device formed on the front surface;
A second step of integrally bending the semiconductor chip and the intermediate reinforcing material, and mounting and fixing the semiconductor chip and the intermediate reinforcing material on a curved mounting surface formed on the package body;
A third step of performing wire bonding between the terminal of the semiconductor chip and the wiring provided on at least one of the intermediate reinforcing member and the package body;
A method for manufacturing a solid-state imaging device, comprising:

20. The method according to claim 19, further comprising a fourth step of sealing a curved mounting surface of the package body on which the semiconductor chip and the intermediate reinforcing member are mounted with a cover.

20. The solid-state imaging device according to claim 19, wherein, in the second step, the semiconductor chip and the intermediate reinforcing material are brought into close contact with a curved mounting surface of the package body by vacuum suction, and then fixed by an adhesive unit. Production method.

20. The solid-state imaging device according to claim 19, wherein in the second step, the semiconductor chip and the intermediate reinforcing material are brought into close contact with the curved mounting surface of the package body by pressing, and then fixed by an adhesive unit. Method.

20. The method according to claim 19, wherein the curved mounting surface of the package body, the semiconductor chip, and the intermediate reinforcing member are curved in a two-dimensional arc.

20. The method according to claim 19, wherein the curved mounting surface of the package body, the semiconductor chip, and the intermediate reinforcing member are curved in a three-dimensional arc.

In the second step, the positioning is performed by a positioning projection provided on the curved mounting surface of the package body and a positioning hole provided in the intermediate reinforcing member, into which the projection is inserted. 20. The method for manufacturing a solid-state imaging device according to claim 19, wherein: