JP2004119599A - 薄膜半導体装置の製造方法、薄膜半導体装置、電気光学装置、および電子機器 - Google Patents

薄膜半導体装置の製造方法、薄膜半導体装置、電気光学装置、および電子機器 Download PDF

Info

Publication number
JP2004119599A
JP2004119599A JP2002279289A JP2002279289A JP2004119599A JP 2004119599 A JP2004119599 A JP 2004119599A JP 2002279289 A JP2002279289 A JP 2002279289A JP 2002279289 A JP2002279289 A JP 2002279289A JP 2004119599 A JP2004119599 A JP 2004119599A
Authority
JP
Japan
Prior art keywords
film
insulating film
substrate
electro
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2002279289A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004119599A5 (enExample
Inventor
Taku Hiraiwa
平岩　卓
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2002279289A priority Critical patent/JP2004119599A/ja
Publication of JP2004119599A publication Critical patent/JP2004119599A/ja
Publication of JP2004119599A5 publication Critical patent/JP2004119599A5/ja
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80521—Cathodes characterised by their shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2002279289A 2002-09-25 2002-09-25 薄膜半導体装置の製造方法、薄膜半導体装置、電気光学装置、および電子機器 Withdrawn JP2004119599A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002279289A JP2004119599A (ja) 2002-09-25 2002-09-25 薄膜半導体装置の製造方法、薄膜半導体装置、電気光学装置、および電子機器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002279289A JP2004119599A (ja) 2002-09-25 2002-09-25 薄膜半導体装置の製造方法、薄膜半導体装置、電気光学装置、および電子機器

Publications (2)

Publication Number Publication Date
JP2004119599A true JP2004119599A (ja) 2004-04-15
JP2004119599A5 JP2004119599A5 (enExample) 2005-10-13

Family

ID=32274341

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002279289A Withdrawn JP2004119599A (ja) 2002-09-25 2002-09-25 薄膜半導体装置の製造方法、薄膜半導体装置、電気光学装置、および電子機器

Country Status (1)

Country Link
JP (1) JP2004119599A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007141945A (ja) * 2005-11-15 2007-06-07 Hitachi Displays Ltd 表示装置の製造方法及び表示装置
JP2010147027A (ja) * 2005-07-06 2010-07-01 Samsung Mobile Display Co Ltd 平板表示装置及びその製造方法
JP2013125136A (ja) * 2011-12-14 2013-06-24 Sony Corp 駆動基板、表示装置、平坦化方法および駆動基板の製造方法
EP3176826A1 (en) * 2015-12-02 2017-06-07 LG Display Co., Ltd. Display device and method for manufacturing the same
WO2020206719A1 (zh) * 2019-04-08 2020-10-15 深圳市华星光电半导体显示技术有限公司 显示面板及其制备方法
US11073729B2 (en) 2006-04-06 2021-07-27 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, semiconductor device, and electronic appliance

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010147027A (ja) * 2005-07-06 2010-07-01 Samsung Mobile Display Co Ltd 平板表示装置及びその製造方法
JP2007141945A (ja) * 2005-11-15 2007-06-07 Hitachi Displays Ltd 表示装置の製造方法及び表示装置
US11073729B2 (en) 2006-04-06 2021-07-27 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, semiconductor device, and electronic appliance
JP2021121849A (ja) * 2006-04-06 2021-08-26 株式会社半導体エネルギー研究所 表示装置
US11442317B2 (en) 2006-04-06 2022-09-13 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, semiconductor device, and electronic appliance
US11644720B2 (en) 2006-04-06 2023-05-09 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, semiconductor device, and electronic appliance
US11921382B2 (en) 2006-04-06 2024-03-05 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, semiconductor device, and electronic appliance
JP2013125136A (ja) * 2011-12-14 2013-06-24 Sony Corp 駆動基板、表示装置、平坦化方法および駆動基板の製造方法
EP3176826A1 (en) * 2015-12-02 2017-06-07 LG Display Co., Ltd. Display device and method for manufacturing the same
WO2020206719A1 (zh) * 2019-04-08 2020-10-15 深圳市华星光电半导体显示技术有限公司 显示面板及其制备方法

Similar Documents

Publication Publication Date Title
KR100528626B1 (ko) 반투과·반사형 전기 광학 장치, 전자 기기, 및반투과·반사형 전기 광학 장치의 제조 방법
KR100482488B1 (ko) 전기 광학 장치, 전자 기기 및 전기 광학 장치의 제조 방법
US8294840B2 (en) Liquid crystal display device with fringe field switching mode
CN100394295C (zh) 薄膜半导体装置及其制造方法、电光装置和电子机器
KR100514507B1 (ko) 전기 광학 장치 및 그 제조 방법
KR100511578B1 (ko) 반사형 전기 광학 장치 및 전자기기
KR100714819B1 (ko) 박막 반도체 장치, 전기 광학 장치 및 전자 기기
JP2004119599A (ja) 薄膜半導体装置の製造方法、薄膜半導体装置、電気光学装置、および電子機器
JP4154880B2 (ja) 電気光学装置及びその製造方法
JP3951694B2 (ja) 半透過・反射型電気光学装置、電子機器、および半透過・反射型電気光学装置の製造方法
US6838699B2 (en) Electro-optical device with undercut-reducing thin film pattern and reticle
JP4035992B2 (ja) 電気光学装置、電子機器、および電気光学装置の製造方法
KR100560227B1 (ko) 반투과반사형 전기 광학 장치 및 그것을 이용한 전자기기
JP3979077B2 (ja) 電気光学装置および電子機器
JP2004111618A (ja) 薄膜半導体装置の製造方法、薄膜半導体装置、電気光学装置、および電子機器
JP2001051295A (ja) アクティブマトリクス基板及び電気光学装置及び電子機器
JP2003029298A (ja) 薄膜半導体装置、電気光学装置、電子機器、薄膜半導体装置並びに電気光学装置の製造方法
US8064323B2 (en) Electro-optical device and electronic apparatus
JP2002164543A (ja) 半導体装置、電気光学装置およびそれらの製造方法
JP2003195285A (ja) 反射型電気光学装置、電子機器、および反射型電気光学装置の製造方法
JP4023111B2 (ja) 電気光学装置の製造方法
JP3932844B2 (ja) 電気光学装置及びその製造方法
KR101294693B1 (ko) 액정표시장치용 어레이 기판
US20080157275A1 (en) Display device and method of manufacturing the same
JP2004045756A (ja) 半透過・反射型電気光学装置、およびそれを用いた電子機器

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050603

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050603

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20070402

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080714

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080805

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20080930