JP2004104061A - Separable shielding ring - Google Patents

Separable shielding ring Download PDF

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Publication number
JP2004104061A
JP2004104061A JP2002332347A JP2002332347A JP2004104061A JP 2004104061 A JP2004104061 A JP 2004104061A JP 2002332347 A JP2002332347 A JP 2002332347A JP 2002332347 A JP2002332347 A JP 2002332347A JP 2004104061 A JP2004104061 A JP 2004104061A
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Japan
Prior art keywords
shield ring
fixing
separation
main body
plasma
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Pending
Application number
JP2002332347A
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Japanese (ja)
Inventor
Shigeru Hatayama
畑山　茂
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Young Shin Quartz Co Ltd
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Young Shin Quartz Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Abstract

<P>PROBLEM TO BE SOLVED: To provide a shielding ring having a long useful life wherein only a damaged part thereof can be replaced without replacing the whole shielding ring to reduce a temporal/economical loss. <P>SOLUTION: This separable shielding ring is used to shield a part of an upper electrode of a plasma etching apparatus for etching the surface of a substrate to be processed with a gas in a plasma state. The shielding ring has a hollow disc shape, and comprises a main body made of quarts having a vertically projected part at the peripheral part thereof and a separable part, having a hollow part through which the plasma generated at the upper electrode can pass, which fits into the inside part of the main body. <P>COPYRIGHT: (C)2004,JPO

Description

【０００１】
【産業上の利用分野】
本発明は、ウェーハのエッチング工程で用いるシールドリングに関し、より詳しくは、ウェーハのプラズマエッチング時にプラズマに曝される部分が分離可能な分離型シールドリングに関するものである。
【０００２】
【従来の技術】
最近、半導体素子の高集積化に伴い半導体素子の表面処理にプラズマを使ったエッチング工程がよく用いられている。プラズマエッチングは半導体ウェーハの製造において絶縁膜や導電体膜などの被処理膜の加工手段として用いられるが、使用するエッチング装置は、パターンのエッチング精度、感光性樹脂パターンの寸法精度、エッチング速度などを考慮して選択されるのが一般的であるが、さらに、プラズマエッチング時の異常放電の防止、プラズマ密度の均一化、ＲＦ（Ｒａｄｉｏ　Ｆｒｅｑｕｅｎｃｙ）がかかるとき発生するプラズマのウェーハへの集中なども考慮する必要がある。該プラズマエッチング装置としてその上部電極の不要な部位をシールドリングで覆う装置がある。従来のシールドリング１００を備えたエッチング装置を図１に示す。図１において、反応チャンバー１１０内に所定の量と圧力の反応ガスを供給し、高周波をＲＦ（Ｒａｄｉｏ　Ｆｒｅｑｕｅｎｃｙ）モジュール１１２から上部電極及び下部電極にかけ上部電極１１１と下部電極１０７との間にプラズマを発生させ、反応ガスをイオン化させ被処理膜をエッチングする。反応チャンバー１１０内にはウェーハ１１３を支持する石英製カバーリング１０９、フォーカスリング１０８が装着され、ウェーハ１１３の下部に下部電極１０７が装着されている。カバーリング１０９はウェーハ１１３を固定するガイドの役目を果すとともにガスの円滑な流れをも誘導し、ポリマーを蒸着させる。また、上部及び下部電極はウェーハのエッチングのために電子を発生させる。チャンバー１１０は絶縁の役目を果たす石英からなる断熱円筒部１０２、１０３を備える。上部電極１１１はＲＦモジュール１１２と連結され、上部電極の下部にはＲＦがかかったときプラズマをウェーハに集中させるため不要な部位を覆うシールドリング１００が設けられている。シールドリング１００とウェーハ１１３との間隔は約２５〜３０ｍｍ程であり、図１では拡大して示していあ。
【０００３】
前記シールドリング１００は図２ａ及び２ｂのような構造からなる。図２ａは従来のシールドリング１００の平面図で、図２ｂは図２ａのＡ−Ａ部断面図である。シールドリングには外周に垂直に突出する凸部１３３を設け、該凸部１３３には固定孔１３１が設けられボルトのような締結具でシールドリングニ固定する。従来のシールドリングは、ウェーハのエッチングの際発生するプラズマでシールドリング下部面１３２がエッチングされると全体を頻繁に取替える必要があった。通常、約３００〜３５０分使用後に交換しなければならないので、シールドリング全体の交換に伴う経済的負担及び交換作業に伴う時間上のロスガ大きな問題となっていた。
【０００４】
【発明が解決しようとする課題】
本発明は上記欠点を解決すべく案出されたもので、本発明は、プラズマエッチング装置に用いるシールドリングの損傷部位のみを交替できる分離型シールドリングを提供することを目的する。
【０００５】
また、本発明は、シールドリングの表面粗さをプラズマでエッチングされる分離部とされない本体部分とで異ならせ、使用寿命を長くしたシールドリングを提供することを目的とする。
【０００６】
さらに、本発明は、シールドリングのプラズマでエッチングされる分離部をアルミナ、ＹＡＧなどのセラミックスで形成し耐久性の高いシールドリングを提供することを目的とする。
【０００７】
【課題を解決するための手段】
前記目的を達成する本発明は、プラズマ状態のガスで被処理基板の表面をエッチングするプラズマエッチング装置の上部電極の一部を遮蔽するシールドリングにおいて、前記シールドリングが、中空円板状で、その外周部に垂直に突出する凸部を有する石英製本体部とその内側部分に篏合する上部電極で生成したプラズマを通過する中空部を有する分離部とからなる分離型シールドリングであり、好ましくは、本体部の内周部が下方に向って傾斜し内径を小さくし、該本体部の内側には分離部が篏合され、その篏合が分離部の外周部に設けた上方に向けて傾斜する傾斜部と前記本体部の傾斜部で行われているのがよく、また、本体部の内側下部に直径方向に突出する固定用凸部が設けられ、分離部の外側下部に設けた固定用凹部と前記固定用凸部とが一体的に篏合してもよい。
【０００８】
さらに、好ましくは、分離型シールドリングの本体部と分離部上部面の表面粗さが分離部下部面の表面粗さよりたかいのがよい。より好ましくは、本体部と分離部上部面の表面粗さが１．３〜１．８μｍ、分離部下部面の表面粗さが０．１７〜０．２２μｍの範囲にあるのがよい。
【０００９】
上前記分離部は石英、酸化アルミニウム（Ａｌ２Ｏ３）又はＹＡＧ（Ｙｔｔｒｉｕｍ　Ａｌｕｍｉｎｉｕｍ　Ｇａｒｎｅｔ）のいずれかで形成されるが、好ましくは酸化アルミニウム又はＹＡＧが耐久性の高い分離部が作成できてよい。
【００１０】
【発明の実施の形態】
以下、本発明の好ましき実施例について添付の図面に基づきより詳しく説明する。図３は本発明による分離型シールドリングの一実施例を示す断面図、図４ａないし図４ｇは本発明による分離型シールドリングの他実施例を示す断面図である。
【００１１】
本発明のシールドリングは、上部電極下面に固定されるリングであって、本体部２及び本体部の内側に分離可能に篏合する分離部３からなる。本体部２は所定の内径と外径からなり、その外周部には垂直に突出した凸部５が形成され、その凸部５には固定孔４が多数個設けられボルトなどの締結手段により上部電極下面に固定される。本体部の素材は石英からなる。
【００１２】
分離部３は円板状で前記本体部の内側部分に篏合される。そしてその中央部にはプラズマが通過する中空部がある。前記篏合はシールドリングが装着された状態で分離部が分離できればよく、様々な態様が可能である。１態様として、本体部の内周部が下方に向って傾斜し内径が小さくなっており、その本体部の内側に分離部が篏合するが、該篏合は分離部の外周部が上方に向かって傾斜する傾斜部と本体部の傾斜部で行い、下部に抜け落ちがないようにする構造となっている。この例ではシールドリングがプラズマで摩耗したとき分離部のみ外し、同じ寸法の新たな分離部を篏合することで再利用が図られる。図４に他の態様を示す。この態様では、本体部２の内側下部に直径方向に突出する固定用凸部６が設けられる。前記固定用凸部６には、図４ａのように本体部２の内側下部が段差をなして直径方向に突出するもの、図４ｂのように本体部の外周に形成された凸部５が突出するもの、図４ｃのように固定用凸部６が上部面から傾斜をなし突出するもの、図４ｄのように前記傾斜が２段になっているもの、図４ｅのように図４ｄの２段目が突出型のものなどがある。また、図４ｆ及び図４ｇのように、固定用凸部６及び固定用凹部７に固定突起９を形成してもよい。図４ｆにおいては固定用凹部７に突起９が形成され、図４ｇにおいては固定用凸部の上部面に固定突起９が形成されている。一方、分離部３には固定用凹部７が形成され、これにより本体部と分離部とが相互に嵌合できる。特に、分離部の内側下部の隅部をグラインド処理し丸みをつけるのがよい。これによりガスの流れが円滑となる。このように、本発明の分離型シールドリングは本体部２と分離部３とからなり、プラズマエッチングで分離部３下部面の摩耗が激しくなったとき分離部を新たに交換すればよく、本体部はそのまま使用できるので従来のシールドリングのように全体を交換するのに比べ費用を大幅に節減できる。さらに、好ましくは、本発明の分離型シールドリングの本体部と分離部上部面の表面粗さを分離部下部の表面粗さより粗くするするのがよい。前記本体部と分離部上部面の表面粗さは１．３〜１．８μｍ、分離部下部面の表面粗さは０．１７〜０．２２μｍの範囲がよい。表面粗さでプラズマによるエッチング量が決まるが、表面粗さが小さい方が粗いものよりプラズマによるエッチングの影響が少ない。これは、表面積が表面粗さが小さいい方が小さいことによる。プラズマに曝される分離部下部面の表面を本体部と分離部の上部面より精密に加工することで前記表面粗さが達成できる。その結果、シールドリングの使用時間を長くできる上に、エッチング中発生するポリマーを表面の粗い部位に蒸着させることができる。
【００１３】
図５において、分離部のＡ部分はプラズマによりエッチングされる部分で、Ｂ及びＣ部分はプラズマに影響されない部分である。従来用いる一体型シールドリングにおいては、全体シールドリングまたはシールドリングの全体の下部面の表面粗さを同一に加工していたが、本発明では分離部下部のみを精密加工して所望の表面粗さにした。すなわち、分離部の下部面のＡ部分の表面粗さを０．１７〜０．２２μｍにする。表面粗さが０．１７μｍ未満では必要以上の加工を行うことで加工コストが高くなる。また、粗度さが０．２２μｍを超えると、エッチングが激しくなりシールドリングの交換時期を早くする必要がありコスト高となる。一方、Ｂ及びＣ部の表面粗さは１．３〜１．８μｍの範囲でよい。これはエッチングに直接影響を受けない部分で粗くてもよい。
【００１４】
前記分離部は石英、酸化アルミニウム又はＹＡＧのいずれかで形成できるが、それらの特性を表１に示す。
【００１５】
【表１】

Figure 2004104061
【００１６】
本発明の分離型シールドリングの分離部は石英で作製してもよいが、好ましくは酸化アルミニウムやＹＡＧがよい。前記酸化アルミニウム又はＹＡＧを用いることで、シールドリングの交換時間を飛躍的に長くできる上に、強度、その他の特性も向上できる。
【００１７】
上記には本発明の特定の態様について図示し。説明したが、以下の特許請求範囲により具備される本発明の精神や分野を外れない限度内において、本発明が多様に改造及び変化され得ることは当業界において通常の知識を有する者ならば容易に想到できる。
【００１８】
【発明の効果】
本発明のシールドリングは分離型で、損傷部位のみを交換するだけで、シールドリング全体を交換する必要がなく時間的・経済的損失を少なくできる。また、本発明のシールドリングの表面粗さを本体部及び分離部の上面部と分離部の下部とで異ならせることで、従来のシールドリングより遥かに長い使用寿命が達成できる。
【００１９】
また、本発明のシールドリングは分離部を石英だけでなく、酸化アルミニウムやＹＧＡ等で作成でき、より耐久性の高いシールドリングが得られる。
【図面の簡単な説明】
【図１】従来のシールドリングを用いたプラズマエッチング装備の断面図である。
【図２】従来のシールドリングを示す詳細図である。
【図３】本発明の分離型シールドリングの断面図である。
【図４】図４Ｓａないし図４ｇは本発明の分離型シールドリングの他実施例を示す断面図である。
【図５】本発明の分離型シールドリングの表面粗さを説明する断面図である。
【符号の説明】
２　　本体部
３　　分離部
４　　固定孔
５　　凸部
６　　固定用凸部
７　　固定用凹部
９　　固定突起[0001]
[Industrial applications]
The present invention relates to a shield ring used in a wafer etching process, and more particularly, to a separation type shield ring capable of separating a portion of a wafer exposed to plasma during plasma etching.
[0002]
[Prior art]
2. Description of the Related Art Recently, an etching process using plasma has been often used for surface treatment of a semiconductor device with high integration of the semiconductor device. Plasma etching is used as a means of processing a film to be processed such as an insulating film or a conductive film in the manufacture of a semiconductor wafer. The etching apparatus used is designed to control the pattern etching accuracy, the photosensitive resin pattern dimensional accuracy, the etching rate, and the like. The selection is generally made in consideration of the above, and further consideration is given to prevention of abnormal discharge during plasma etching, uniformization of plasma density, concentration of plasma generated when RF (Radio Frequency) is applied to the wafer, and the like. There is a need to. As the plasma etching apparatus, there is an apparatus that covers an unnecessary portion of the upper electrode with a shield ring. FIG. 1 shows an etching apparatus provided with a conventional shield ring 100. In FIG. 1, a reaction gas of a predetermined amount and pressure is supplied into a reaction chamber 110, and a high frequency is applied from an RF (Radio Frequency) module 112 to an upper electrode and a lower electrode to generate plasma between the upper electrode 111 and the lower electrode 107. Then, the reaction gas is ionized to etch the film to be processed. A quartz cover ring 109 and a focus ring 108 for supporting a wafer 113 are mounted in the reaction chamber 110, and a lower electrode 107 is mounted below the wafer 113. The cover ring 109 serves as a guide for fixing the wafer 113 and also guides a smooth flow of gas to deposit a polymer. Also, the upper and lower electrodes generate electrons for etching the wafer. The chamber 110 includes heat-insulating cylindrical portions 102 and 103 made of quartz that serve as insulation. The upper electrode 111 is connected to the RF module 112, and a shield ring 100 is provided below the upper electrode to cover an unnecessary portion to concentrate plasma on the wafer when RF is applied. The distance between the shield ring 100 and the wafer 113 is about 25 to 30 mm, and is enlarged in FIG.
[0003]
The shield ring 100 has a structure as shown in FIGS. 2A and 2B. FIG. 2A is a plan view of a conventional shield ring 100, and FIG. 2B is a cross-sectional view taken along the line AA of FIG. 2A. The shield ring is provided with a projection 133 projecting perpendicularly to the outer periphery, and the projection 133 is provided with a fixing hole 131 and is fixed to the shield ring with a fastener such as a bolt. The conventional shield ring has to be frequently replaced as a whole when the lower surface 132 of the shield ring is etched by the plasma generated during the etching of the wafer. Normally, the replacement must be performed after about 300 to 350 minutes of use, so that there has been an economic burden associated with the replacement of the entire shield ring, and a large loss of time due to the replacement work.
[0004]
[Problems to be solved by the invention]
The present invention has been devised in order to solve the above-mentioned drawbacks, and an object of the present invention is to provide a separated shield ring capable of replacing only a damaged portion of a shield ring used in a plasma etching apparatus.
[0005]
Another object of the present invention is to provide a shield ring in which the surface roughness of a shield ring is made different from that of a main body portion which is not separated from a portion etched by plasma and is not used, thereby extending the service life.
[0006]
It is a further object of the present invention to provide a highly durable shield ring in which a separation portion of the shield ring etched by plasma is formed of ceramics such as alumina and YAG.
[0007]
[Means for Solving the Problems]
The present invention that achieves the above object is a shield ring that shields a part of an upper electrode of a plasma etching apparatus that etches a surface of a substrate to be processed with a gas in a plasma state, wherein the shield ring has a hollow disk shape. A separated shield ring comprising a quartz main body having a convex portion projecting perpendicularly to the outer peripheral portion and a separating portion having a hollow portion through which plasma generated by the upper electrode fitted to the inner portion is fitted, preferably The inner peripheral portion of the main body portion is inclined downward to reduce the inner diameter, and a separating portion is fitted inside the main body portion, and the fitting is inclined upward provided on the outer peripheral portion of the separating portion. It is preferable that the fixing portion is provided on the lower portion inside the main body portion, and the fixing portion is provided on the lower portion outside the separation portion. For recess and fixing Parts and may also be 篏合 integrally.
[0008]
Further, it is preferable that the surface roughness of the main body portion of the separation type shield ring and the upper surface of the separation portion be higher than the surface roughness of the lower surface of the separation portion. More preferably, the surface roughness of the main body part and the upper surface of the separation part is in the range of 1.3 to 1.8 μm, and the surface roughness of the lower part of the separation part is in the range of 0.17 to 0.22 μm.
[0009]
The separating portion is formed of any one of quartz, aluminum oxide (Al 2 O 3 ), and YAG (Yttrium Aluminum Garnet). Preferably, the separating portion having high durability may be formed of aluminum oxide or YAG.
[0010]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. FIG. 3 is a cross-sectional view showing one embodiment of the separation-type shield ring according to the present invention, and FIGS. 4A to 4G are cross-sectional views showing another embodiment of the separation-type shield ring according to the present invention.
[0011]
The shield ring of the present invention is a ring fixed to the lower surface of the upper electrode, and includes a main body 2 and a separating portion 3 which is separably fitted inside the main body. The main body 2 has a predetermined inner diameter and an outer diameter, and a vertically protruding convex portion 5 is formed on an outer peripheral portion thereof. The convex portion 5 is provided with a large number of fixing holes 4 and is formed by a fastening means such as a bolt. It is fixed to the lower surface of the electrode. The material of the main body is made of quartz.
[0012]
The separating part 3 is a disc-shaped and fitted to the inner part of the main body. At the center there is a hollow part through which the plasma passes. The fitting is not limited as long as the separating portion can be separated while the shield ring is mounted, and various modes are possible. As one mode, the inner peripheral portion of the main body is inclined downward and the inner diameter is reduced, and the separation portion is fitted inside the main body portion. The structure is such that the slope is inclined toward the body and the slope of the main body so that the lower part does not fall off. In this example, when the shield ring is worn out by the plasma, only the separation part is removed, and a new separation part of the same size is fitted to reuse. FIG. 4 shows another embodiment. In this embodiment, a fixing projection 6 is provided at a lower portion inside the main body 2 so as to project in the diametrical direction. As shown in FIG. 4a, the fixing convex portion 6 has a step formed by projecting the inner lower portion of the main body portion 2 in a diametrical direction with a step, and a convex portion 5 formed on the outer periphery of the main body portion as shown in FIG. 4c, the fixing projection 6 is inclined from the upper surface and projects as shown in FIG. 4c, the two-step inclination is shown in FIG. 4d, and the two steps of FIG. 4d are shown in FIG. 4e. Some have protruding eyes. Further, as shown in FIGS. 4F and 4G, the fixing protrusion 9 may be formed on the fixing protrusion 6 and the fixing recess 7. In FIG. 4f, the protrusion 9 is formed in the fixing recess 7, and in FIG. 4g, the fixing protrusion 9 is formed on the upper surface of the fixing protrusion. On the other hand, a fixing concave portion 7 is formed in the separating portion 3 so that the main body portion and the separating portion can be fitted to each other. In particular, it is preferable to grind the inner lower corner of the separation portion to make it round. This makes the gas flow smooth. As described above, the separation-type shield ring of the present invention includes the main body 2 and the separation portion 3, and when the wear on the lower surface of the separation portion 3 becomes severe due to plasma etching, the separation portion may be replaced with a new one. Can be used as it is, so the cost can be greatly reduced compared to replacing the whole like a conventional shield ring. Further, it is preferable that the surface roughness of the main body portion and the upper surface of the separation portion of the separation type shield ring of the present invention is made larger than the surface roughness of the lower portion of the separation portion. The surface roughness of the main body and the upper surface of the separation unit is preferably 1.3 to 1.8 μm, and the surface roughness of the lower surface of the separation unit is preferably 0.17 to 0.22 μm. The amount of etching by plasma is determined by the surface roughness. The effect of etching by plasma is smaller when the surface roughness is smaller than when it is rough. This is because the smaller the surface area is, the smaller the surface roughness is. The surface roughness can be achieved by processing the surface of the lower part of the separation part exposed to plasma more precisely than the upper part of the main part and the separation part. As a result, the use time of the shield ring can be extended, and the polymer generated during the etching can be deposited on the rough surface.
[0013]
In FIG. 5, the portion A of the separation portion is a portion etched by the plasma, and the portions B and C are portions not affected by the plasma. In the conventional integrated shield ring, the surface roughness of the entire shield ring or the entire lower surface of the shield ring is processed to be the same. I made it. That is, the surface roughness of the portion A on the lower surface of the separation portion is set to 0.17 to 0.22 μm. If the surface roughness is less than 0.17 μm, the processing cost is increased by performing more processing than necessary. On the other hand, if the roughness exceeds 0.22 μm, etching becomes severe, and it is necessary to make the replacement time of the shield ring earlier, which increases the cost. On the other hand, the surface roughness of the portions B and C may be in the range of 1.3 to 1.8 μm. This may be rough in portions that are not directly affected by etching.
[0014]
The separating portion can be made of any one of quartz, aluminum oxide and YAG, and their characteristics are shown in Table 1.
[0015]
[Table 1]
Figure 2004104061
[0016]
The separation portion of the separation-type shield ring of the present invention may be made of quartz, but is preferably made of aluminum oxide or YAG. By using the aluminum oxide or YAG, the replacement time of the shield ring can be drastically increased, and the strength and other characteristics can be improved.
[0017]
The above illustrates a particular embodiment of the present invention. Although described above, it is easy for a person having ordinary skill in the art to make various modifications and changes in the present invention without departing from the spirit and scope of the present invention provided by the following claims. I can imagine
[0018]
【The invention's effect】
The shield ring of the present invention is of a separated type, and it is not necessary to replace the entire shield ring only by replacing only the damaged portion, so that time and economic loss can be reduced. Further, by making the surface roughness of the shield ring of the present invention different between the upper surface portion of the main body and the separation portion and the lower portion of the separation portion, it is possible to achieve a much longer service life than the conventional shield ring.
[0019]
In the shield ring of the present invention, the separation portion can be made of not only quartz but also aluminum oxide, YGA, or the like, so that a shield ring with higher durability can be obtained.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a conventional plasma etching equipment using a shield ring.
FIG. 2 is a detailed view showing a conventional shield ring.
FIG. 3 is a sectional view of the separation type shield ring of the present invention.
FIGS. 4Sa to 4G are cross-sectional views showing another embodiment of the separation type shield ring of the present invention.
FIG. 5 is a cross-sectional view illustrating the surface roughness of the separation type shield ring of the present invention.
[Explanation of symbols]
2 Body part 3 Separation part 4 Fixing hole 5 Convex part 6 Fixing convex part 7 Fixing concave part 9 Fixing projection

Claims (8)

プラズマ状態のガスで被処理基板の表面をエッチングするプラズマエッチング装置の上部電極の一部を遮蔽するシールドリングにおいて、
前記シールドリングが、中空円板状で、その外周部に垂直に突出する凸部を有する石英製本体部とその内側部分に篏合する上部電極で生成したプラズマを通過する中空部を有する分離部とからなることを特徴とする分離型シールドリング。In a shield ring that shields a part of an upper electrode of a plasma etching apparatus that etches a surface of a substrate to be processed with a gas in a plasma state,
The shield ring has a hollow disk shape, a quartz body having a convex portion protruding perpendicularly to the outer peripheral portion thereof, and a separating portion having a hollow portion through which plasma generated by an upper electrode fitted to an inner portion thereof is passed. A separate type shield ring comprising: 本体部の内周部が下方に向って傾斜し内径を小さくし、該本体部の内側に分離部が篏合され、その篏合が分離部の外周部に設けた上方に向けて傾斜する傾斜部と前記本体部の傾斜部で行われることを特徴とする請求項１に記載の分離型シールドリング。An inner peripheral portion of the main body portion is inclined downward to reduce the inner diameter, a separating portion is fitted inside the main body portion, and the fitting is inclined upwardly provided on an outer peripheral portion of the separating portion. The separation type shield ring according to claim 1, wherein the separation is performed at a portion and an inclined portion of the main body portion. 本体部の内側下部に直径方向に突出する固定用凸部が設けられ、分離部の外側下部に設けた固定用凹部と前記固定用凸部とが一体的に篏合することを特徴とする請求項１に記載の分離型シールドリング。A fixing projection protruding in the diameter direction is provided at an inner lower portion of the main body, and the fixing recess provided at a lower outer portion of the separating portion and the fixing projection are integrally fitted. Item 2. The separation type shield ring according to Item 1. 固定用凸部の上部面に固定突起が設けられ、分離部の固定用凹部に前記固定突起が挿入する固定溝が設けられていることを特徴とする請求項３に記載の分離型シールドリング。The separation type shield ring according to claim 3, wherein a fixing protrusion is provided on an upper surface of the fixing protrusion, and a fixing groove into which the fixing protrusion is inserted is provided in a fixing recess of the separating portion. 固定用凸部の上部面に固定溝が設けられ、分離部の固定用凹部に前記固定溝に挿入する固定突起が設けられていることを特徴とする請求項３に記載の分離型シールドリング。4. The separation type shield ring according to claim 3, wherein a fixing groove is provided on an upper surface of the fixing convex portion, and a fixing protrusion inserted into the fixing groove is provided in a fixing concave portion of the separating portion. 本体部と分離部上部面の表面粗さが分離部下部面の表面粗さより粗であることを特徴とする請求項１に記載の分離型シールドリング。The separation type shield ring according to claim 1, wherein the surface roughness of the main body and the upper surface of the separation unit is greater than the surface roughness of the lower surface of the separation unit. 本体部と分離部上部面の表面粗さが１．３〜１．８μｍ、分離部下部面の表面粗さが０．１７〜０．２２μｍの範囲にあることを特徴とする請求項６に記載の分離型シールドリング。The surface roughness of the main body and the upper surface of the separation unit is in a range of 1.3 to 1.8 [mu] m, and the surface roughness of the lower surface of the separation unit is in a range of 0.17 to 0.22 [mu] m. Separate shield ring. 分離部が石英、酸化アルミニウム又はＹＡＧのいずれかで作成されることを特徴とする請求項１ないし７に記載の分離型シールドリング。The separation type shield ring according to claim 1, wherein the separation portion is made of any one of quartz, aluminum oxide, and YAG.
JP2002332347A 2002-09-10 2002-11-15 Separable shielding ring Pending JP2004104061A (en)

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KR102178105B1 (en) * 2019-06-05 2020-11-12 주식회사 건테크 Limited ring assembly for semiconductor plasma etching process using CVD-SiC material and improving fixing power

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