JP2004093248A - Electrode needle, probe card, probe device, probe testing method, semiconductor device, and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electrode needle capable of being sensed easily and certainly in the event of out of contacting when the needle is contacted with an electrode, a pad, or a bump. <P>SOLUTION: The electrode needle is to inspect the electric characteristics in the semiconductor manufacturing process in such a manner that it is contacted with the electrode, pad or bump, and is equipped with a needle 20 and a pressure sensor 19 to sense the pressure applied to the needle when it is contacted with the electrode, pad or bump. From the pressure sensed by the sensor 19, a control part judges whether the electrode needle 20 is in contact with the electrode, pad or bump. Thereby sensing can be made whether a pressure is applied to the needle 20, and it is possible to know whether the electrode needle 20 is in contact with the pad etc. easily and certainly. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an electrode needle for contacting an electrode, a pad or a bump in a semiconductor manufacturing process to perform an electrical characteristic test, a probe card including the needle, a probe device, a semiconductor device, and a method of manufacturing the same.
[0002]
[Prior art]
When a large number of IC chips are formed on a semiconductor wafer in a semiconductor manufacturing process, an electrical characteristic test for measuring various characteristics of each IC chip as it is on the semiconductor wafer is performed to screen for defective products. I have to. A probe device is usually used for this inspection. In this probe device, a probe needle (electrode needle) of a probe card is brought into contact with an electrode pad of each IC chip on a semiconductor wafer, and a predetermined voltage is applied from the probe needle to make an electrical test such as a continuity test of each IC chip. This is a device for performing a physical inspection and testing whether or not each IC chip has electrical characteristics via a tester.
[0003]
[Problems to be solved by the invention]
In a semiconductor manufacturing process, an electrode needle is often applied to a pad or a bump. At that time, if the needle does not properly touch the pad or the like, its characteristics cannot be measured properly. When performing measurement of a long chip, simultaneous measurement at multiple points, measurement with a pad shape that is difficult to touch with a needle, etc., it is easy to cause needle contact failure on the pad.
[0004]
Conventionally, when the probe needle of the probe card is applied to the electrode pad of the IC chip, whether or not all the probe needles are in contact with the electrode pad is confirmed by the eyes of the human eye, or at the end of the probe needle. It was confirmed by the provided detection needle.
[0005]
However, if it is confirmed by human eyes, it takes a long time to confirm, and a probe needle that is not in contact may be overlooked. Also, when checking with a detection needle, non-contact of a probe needle at a location away from the detection needle may not be confirmed.
[0006]
While the probe needle is used in this way, the tip of the probe needle is shaved and the height of the needle changes, so that even if a probe needle that does not contact the electrode pad occurs, It was difficult to completely detect a non-contact probe needle by the above confirmation method. As a result, what should otherwise be determined to be a good chip may be determined to be a defective chip by a non-contact probe needle.
[0007]
The present invention has been made in view of the above circumstances, and an object thereof is to make it possible to easily and more reliably detect a non-contact electrode needle when the electrode needle is brought into contact with an electrode, a pad or a bump. An object of the present invention is to provide an electrode needle, a probe card, a probe device, a semiconductor device, and a method for manufacturing the same.
[0008]
[Means for Solving the Problems]
In order to solve the above problems, an electrode needle according to the present invention is an electrode needle for performing an electrical characteristic test by contacting an electrode, a pad or a bump in a semiconductor manufacturing process,
With a needle,
When the needle is brought into contact with an electrode, a pad or a bump, a pressure detection mechanism that detects pressure applied to the needle,
It is characterized by having.
[0009]
According to the above-mentioned electrode needle, it is possible to detect whether or not pressure is applied to the needle by providing the pressure detection mechanism for detecting the pressure applied to the needle. This makes it possible to easily and more reliably detect whether or not the electrode needle is in contact with a pad or the like. For this reason, it is possible to prevent a product that should be originally determined to be a good product from being determined to be a defective product due to a needle contact failure as in the related art. As a result, the yield can be improved.
[0010]
The electrode needle according to the present invention may further include a control unit that determines whether or not the electrode needle is in contact with an electrode, a pad, or a bump based on the pressure detected by the pressure detection mechanism.
[0011]
The electrode needle according to the present invention is an electrode needle for performing an electrical property test by contacting an electrode, a pad or a bump in a semiconductor manufacturing process,
With a needle,
A reflecting mirror formed on the needle;
A laser emitting device that irradiates the reflecting mirror with laser light,
A light detector that detects the laser light reflected from the reflecting mirror,
It is characterized by having.
[0012]
According to the above-mentioned electrode needle, a reflection mirror, a laser emitting device, and a photodetector are provided, so that when the needle is brought into contact with an electrode, a pad or a bump, the needle bends, so that the reflection angle of the reflection mirror is increased. Is changed, and the laser light reflected from the reflection mirror can or cannot be detected by the light detector. Therefore, if the laser beam is detected by the photodetector, it is determined that the needle is in contact with the pad, etc., and if the laser beam is not detected by the photodetector, it is determined that the needle is not in contact with the pad, etc. it can. Alternatively, the reverse determination may be made. Therefore, it is possible to easily and more reliably detect whether or not the electrode needle is in contact with the pad or the like. For this reason, it is possible to prevent a product that should be originally determined to be a good product from being determined to be a defective product due to a needle contact failure as in the related art. As a result, the yield can be improved.
[0013]
In addition, the electrode needle according to the present invention may further include a control unit that determines whether the electrode needle is in contact with an electrode, a pad, or a bump based on whether the light detector detects laser light. It is possible.
[0014]
A semiconductor device according to the present invention is manufactured through a step of inspecting an electrical characteristic of a wafer using the electrode needle according to any one of claims 1 to 4.
[0015]
A method of manufacturing a semiconductor device according to the present invention includes a step of inspecting an electrical characteristic of a wafer using the electrode needle according to any one of claims 1 to 4.
[0016]
The probe card according to the present invention is a probe card for performing a probe test on a semiconductor wafer,
A probe card board,
An electrode needle disposed on the probe card board;
With
The electrode needle is
With a needle,
When the needle is brought into contact with an electrode, a pad or a bump, a pressure detection mechanism that detects pressure applied to the needle,
A control unit that determines whether the electrode needle is in contact with the electrode, pad, or bump from the pressure detected by the pressure detection mechanism,
It is characterized by having.
[0017]
The probe card according to the present invention is a probe card for performing a probe test on a semiconductor wafer,
A probe card board,
An electrode needle disposed on the probe card board;
With
The electrode needle is
With a needle,
A reflecting mirror formed on the needle;
A laser emitting device that irradiates the reflecting mirror with laser light,
A light detector that detects the laser light reflected from the reflecting mirror,
A controller that determines whether or not the electrode needle is in contact with the electrode, pad or bump by detecting whether or not to detect laser light with the photodetector,
It is characterized by having.
[0018]
A probe device according to the present invention has the probe card according to claim 7 or 8.
[0019]
A probe test method according to the present invention is a method for performing a probe test using the probe card according to claim 7,
The electrode needle of the probe card is pressed into contact with each pad of the IC chip on the wafer,
When this contact is made, the pressure applied to the needle is detected by the pressure detection mechanism,
The control unit determines whether the electrode needle is in contact with each pad from the detected pressure,
A probe test is performed after confirming that all electrode needles are in contact with each pad.
[0020]
A probe test method according to the present invention is a method for performing a probe test using the probe card according to claim 8,
The electrode needle of the probe card is pressed into contact with each pad of the IC chip on the wafer,
In this state of contact, the laser emitting device irradiates the reflecting mirror with laser light, and the laser light reflected from the reflecting mirror is detected by the photodetector. Is determined by the control unit,
A probe test is performed after confirming that all electrode needles are in contact with each pad.
[0021]
A semiconductor device according to the present invention is manufactured through a step of performing an electrical characteristic inspection of a wafer using the probe card according to claim 7 or 8.
[0022]
A method of manufacturing a semiconductor device according to the present invention includes a step of performing an electrical characteristic test on a wafer using the probe card according to claim 7 or 8.
[0023]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
The electrode needle according to the first embodiment of the present invention is applied to, for example, a probe device as a probe needle. Note that the electrode needle is not limited to the probe needle, and includes a needle other than the probe needle as long as it is a needle for contacting the electrode in the semiconductor manufacturing process.
[0024]
The probe device has a test head having pin electronics including a sample power supply for applying a voltage to an IC chip on a semiconductor wafer and an input unit for taking an output from the IC chip into a measuring unit, and a predetermined head on the IC chip. A probe card having a probe needle to be brought into contact with the electrode pad, and a connection ring having a pogo pin for electrically connecting the test head to the probe needle are provided. A relay board such as a linear motherboard or a performance board is provided in such a probe device as necessary, and the probe card and the tester are electrically connected by these relay boards.
[0025]
FIG. 1 is a configuration diagram schematically showing an electrode needle according to a first embodiment of the present invention. 2A is a schematic plan view showing a probe card to which the electrode needle shown in FIG. 1 is applied, and FIG. 2B is a cross-sectional view taken along line 2b-2b shown in FIG. is there.
[0026]
As shown in FIGS. 2A and 2B, the probe card is capable of measuring an IC chip 12 on a semiconductor wafer 11 such as a memory device. The probe card has a probe card substrate 13 provided with printed wiring on the surface and inside. The probe card substrate 13 has a substrate opening area 13a at the center thereof.
[0027]
A tester connection terminal area 14 is provided on the outer periphery of the probe card substrate 13, and a tester connection terminal 15 is arranged in the tester connection terminal area 14. Further, on the upper surface side of the probe card substrate 13, a heat radiation reinforcing plate 16 is provided in accordance with the periphery of the substrate opening area 13a. The heat radiation reinforcing plate 16 promotes heat radiation of the substrate 13 and suppresses bending thereof during an electrical characteristic test in a high temperature environment. Although the present invention is applied to the probe card having the heat dissipation reinforcing plate 16, the present invention can be applied to a probe card having no heat dissipation reinforcing plate.
[0028]
On the lower surface side of the probe card substrate 13, a fixing ring 17 made of a molding resin for fixing the probe needles is arranged along the periphery of the substrate opening area 13a. Further, on the lower surface side of the probe card substrate 13, a plurality of probe needles 18 are fixed along the periphery of the fixing ring 17, as shown in FIG. 2 (b). Connected to printed wiring. The printed wiring is connected to the tester connection terminal 15 via, for example, a jumper wiring (not shown).
[0029]
As shown in FIG. 1, a pressure sensor 19 is disposed on each probe needle 18, and an electrode needle 20 is disposed on the pressure sensor 19. The base end of the electrode needle 20 is connected to a pressure detection unit (not shown) of the pressure sensor 19, and the pressure detection unit can detect whether the electrode needle 20 has contacted a pad, a bump, or the like. It has become. That is, each of the electrode needles 20 has a pressure sensor 19, and the pressure sensor 19 has a built-in function for checking whether or not it has come into contact with a pad or a bump. A guide 21 for guiding the electrode needle 20 is provided between the pressure sensor 19 and the tip of the electrode needle 20. The guide needle 21 allows the electrode needle 20 to move up and down as indicated by an arrow 22. The pressure sensor 19 is electrically connected to a control unit (not shown), and this control unit performs control as described later.
[0030]
When an electrical characteristic test is actually performed by using a probe card, as shown in FIG. 2B, the semiconductor wafer 11 is held on a chuck table 23 and the tip of the probe needle 18 is attached to the IC chip 12 of the wafer 11. Then, a predetermined pressure is applied to the probe card 13 to press the tip of the probe needle (the tip of the electrode needle 20) against the electrode pad or the bump. At this time, since the pressure detected by the pressure sensor 19 is different between the electrode needle that is in contact with the electrode pad or the bump and the electrode needle that is not in contact, the electrode needle that is not in contact with the electrode pad or the bump can be detected by the pressure sensor. That is, the pressure applied to each electrode needle in the pressure sensor is converted into a stylus pressure signal, and this stylus pressure signal is sent to a control unit.The control unit compares the stylus pressure signal with a reference value. A non-contact electrode needle can be detected based on the comparison result. The reference value corresponds to the minimum pressure at which the electrode needle is properly in contact.
[0031]
When an electrode needle that is not hit is detected, the probe card is further overdriven to confirm that all the probe needles are hit. As a result, when the contact between the tip of the probe needle and the electrode pad or the like is properly performed, the electrical characteristic test of the IC chip 12 is performed. When detecting an electrode needle that has not been hit even after the overdrive, the probe needle of the probe card is adjusted, and then the above-described electrical characteristic test is performed again.
[0032]
Further, the following additional configuration can be added to the probe needle 18. A spring (not shown) is disposed inside the guide section 21 or on the electrode needle 20 between the guide section 21 and the pressure sensor 19, and when the electrode needle 20 is pressed against a pad or a bump, the electrode needle 20 is pressed by the spring. Has elasticity to reduce damage to the electrode needle.
[0033]
According to the first embodiment, by arranging the pressure sensor 19 at the base end of the electrode needle 20, it is possible to detect whether or not all the electrode needles 20 are in contact with the pads or the like. . For this reason, the contact and non-contact of the electrode needle can be automatically determined, and it is possible to prevent an IC chip that should be originally determined to be a non-defective product from being determined as a defective product due to a defective needle contact as in the related art. As a result, defective chips can be reduced, and the yield can be improved.
[0034]
Further, it is also possible to manufacture a semiconductor device through a step of inspecting the electrical characteristics of a wafer using the electrode needles 20. Further, it is also possible to manufacture a semiconductor device through a step of inspecting the electrical characteristics of a wafer using the probe card.
[0035]
FIG. 3A is a configuration diagram schematically showing an electrode needle according to a second embodiment of the present invention. This electrode needle has a function of detecting whether or not it has come into contact with an electrode, a pad, a bump, or the like.
[0036]
A reflection mirror 31 is disposed on the electrode needle 30. A laser emitting device 32 for irradiating the reflecting mirror 31 with laser light 33 is disposed on the electrode needle 30, and a photodetector 35 for receiving and detecting the laser light 34 reflected from the reflecting mirror 31 is disposed. Have been. The light detector 35 is electrically connected to a control unit (not shown), and the control unit performs control as described later.
[0037]
The positional relationship between the reflection mirror 31, the laser emitting device 32, and the photodetector 35 is as follows. When the electrode needle 30 is not in contact with an electrode, a pad, a bump, or the like, the laser emitting device 32 irradiates the reflecting mirror 31 with laser light 33, and the laser light 34 a reflected from the reflecting mirror 31 is detected by the photodetector 35. Each is located at a position where it is not detected. When the electrode needle 30 is in contact with an electrode, a pad, a bump, or the like at an appropriate pressure, the laser emitting device 32 irradiates the reflecting mirror 31 with laser light 33, and reflects the laser light 34 reflected from the reflecting mirror 31. Are located at such positions that are detected by the photodetector 35.
[0038]
Since the reflection mirror 31, the laser emitting device 32, and the photodetector 35 are arranged in this manner, when the electrode needle 30 is brought into contact with an electrode, a pad, a bump, or the like, the electrode needle 30 bends, thereby causing reflection. The reflection angle of the mirror changes, and the laser beam 34 can be detected by the photodetector 35. Therefore, when laser light is detected by the photodetector 35, a detection signal is sent to the control unit, and the control unit determines that the electrode needle 30 is in contact with a pad or the like. When the laser beam cannot be detected by the photodetector 35, the detection signal is not sent to the control unit, so that the control unit determines that the electrode needle 30 is not in contact with the pad or the like. For this reason, the contact and non-contact of the electrode needle can be automatically determined, and it is possible to prevent an IC chip that should be originally determined to be a non-defective product from being determined as a defective product due to a defective needle contact as in the related art. As a result, defective chips can be reduced, and the yield can be improved.
[0039]
It is also possible to manufacture a semiconductor device through a step of inspecting the electrical characteristics of a wafer using the electrode needle. Further, it is also possible to form the electrode needle on the probe needle of the probe card shown in FIG. Further, a probe test can be performed using a probe device having such a probe card. Further, it is also possible to manufacture a semiconductor device through a process of inspecting the electrical characteristics of a wafer using such a probe card.
[0040]
FIG. 3B is a configuration diagram showing a modification of the electrode needle shown in FIG. 3A. The same parts as those in FIG. 3A are denoted by the same reference numerals, and only different parts will be described.
[0041]
The positional relationship between the reflection mirror 31, the laser emitting device 32, and the photodetector 35 is as follows. When the electrode needle 30 is not in contact with an electrode, a pad, a bump, or the like, the laser emitting device 32 irradiates the reflecting mirror 31 with laser light 33, and the laser light 44 a reflected from the reflecting mirror 31 is detected by the photodetector 35. Each is located at a location that can be detected. When the electrode needle 30 is in contact with an electrode, pad, bump, or the like with an appropriate pressure, the laser emitting device 32 irradiates the reflecting mirror 31 with laser light 33, and reflects the laser light 44 reflected from the reflecting mirror 31. Are not detected by the photodetector 35.
[0042]
Since the reflection mirror 31, the laser emitting device 32, and the photodetector 35 are arranged in this manner, when the electrode needle 30 is brought into contact with an electrode, a pad, a bump, or the like, the electrode needle 30 bends, and The laser light 34 is not detected by the detector 35. Therefore, when the laser beam is not detected by the photodetector 35, it can be determined that the electrode needle 30 is in contact with the pad or the like. When the laser beam is detected by the photodetector 35, the electrode needle contacts the pad or the like. It can be determined that it has not been done. For this reason, the same operation and effect as those of the second embodiment can be obtained, the number of defective chips can be reduced, and the yield can be improved.
[0043]
The present invention is not limited to the above embodiment, but can be implemented with various modifications.
[0044]
【The invention's effect】
As described above, according to the present invention, when an electrode needle is brought into contact with an electrode, pad or bump, an electrode needle, a probe card, a probe device, and a semiconductor device capable of easily and more reliably detecting a non-contact electrode needle And a method for producing the same.
[Brief description of the drawings]
FIG. 1 is a configuration diagram schematically showing an electrode needle according to a first embodiment of the present invention.
2A is a schematic plan view showing a probe card to which the electrode needle shown in FIG. 1 is applied, and FIG. 2B is a cross-sectional view taken along line 2b-2b shown in FIG.
3A is a configuration diagram schematically showing an electrode needle according to a second embodiment of the present invention, and FIG. 3B is a configuration showing a modification of the electrode needle shown in FIG. FIG.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 11 ... Semiconductor wafer 12 ... IC chip 13 ... Probe card board 13a ... Board opening area 14 ... Tester connection terminal area 15 ... Tester connection terminal 16 ... Heat dissipation reinforcing plate 17 ... Fixing ring 18 ... Probe needle 19 ... Pressure sensors 20, 30 ... Electrode needle 21 Guide part 22 Arrow 23 Chuck table 31 Reflecting mirror 32 Laser emitting devices 33, 34, 34a, 44, 44a Laser light 35 Photodetector

Claims (13)

An electrode needle for performing an electrical property test by contacting an electrode, a pad or a bump in a semiconductor manufacturing process,
With a needle,
When the needle is brought into contact with an electrode, a pad or a bump, a pressure detection mechanism that detects pressure applied to the needle,
An electrode needle comprising: The electrode needle according to claim 1, further comprising a control unit that determines whether or not the electrode needle is in contact with an electrode, a pad, or a bump based on the pressure detected by the pressure detection mechanism. An electrode needle for performing an electrical property test by contacting an electrode, a pad or a bump in a semiconductor manufacturing process,
With a needle,
A reflecting mirror formed on the needle;
A laser emitting device that irradiates the reflecting mirror with laser light,
A light detector that detects the laser light reflected from the reflecting mirror,
An electrode needle comprising: The electrode needle according to claim 3, further comprising a control unit that determines whether the electrode needle is in contact with an electrode, a pad, or a bump based on whether or not the light detector detects laser light. . A semiconductor device manufactured through a process of inspecting an electrical characteristic of a wafer using the electrode needle according to claim 1. A method for manufacturing a semiconductor device, comprising a step of inspecting an electrical characteristic of a wafer using the electrode needle according to claim 1. A probe card for performing a probe test on a semiconductor wafer,
A probe card board,
An electrode needle disposed on the probe card board;
With
The electrode needle is
With a needle,
When the needle is brought into contact with an electrode, a pad or a bump, a pressure detection mechanism that detects pressure applied to the needle,
A control unit that determines whether the electrode needle is in contact with the electrode, pad, or bump from the pressure detected by the pressure detection mechanism,
A probe card comprising: A probe card for performing a probe test on a semiconductor wafer,
A probe card board,
An electrode needle disposed on the probe card board;
With
The electrode needle is
With a needle,
A reflecting mirror formed on the needle;
A laser emitting device that irradiates the reflecting mirror with laser light,
A light detector that detects the laser light reflected from the reflecting mirror,
A controller that determines whether or not the electrode needle is in contact with the electrode, pad or bump by detecting whether or not to detect laser light with the photodetector,
A probe card comprising: A probe device comprising the probe card according to claim 7. A method for performing a probe test using the probe card according to claim 7,
The electrode needle of the probe card is pressed into contact with each pad of the IC chip on the wafer,
When this contact is made, the pressure applied to the needle is detected by the pressure detection mechanism,
The control unit determines whether the electrode needle is in contact with each pad from the detected pressure,
A probe test method comprising: confirming that all electrode needles are in contact with each pad; and performing a probe test. A method for performing a probe test using the probe card according to claim 8,
The electrode needle of the probe card is pressed into contact with each pad of the IC chip on the wafer,
In this state of contact, the laser emitting device irradiates the reflecting mirror with laser light, and the laser light reflected from the reflecting mirror is detected by the photodetector. Is determined by the control unit,
A probe test method comprising: confirming that all electrode needles are in contact with each pad; and performing a probe test. A semiconductor device manufactured through a step of performing an electrical characteristic test on a wafer using the probe card according to claim 7. A method for manufacturing a semiconductor device, comprising a step of performing an electrical characteristic test on a wafer using the probe card according to claim 7.

Images