JP2004063520A - Dry cleaning apparatus and method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an improved dry cleaning apparatus and an improved dry cleaning method for cleaning surface of wafers with higher efficiency in the drying atmosphere in the semiconductor device manufacturing process, and improving the cleaning capability of dry cleaning process to give the cleaning capability to the details at the surface having ultra-fine structure. <P>SOLUTION: This cleaning apparatus executes cleaning of wafers to be processed with flow of gas which can be obtained by injecting the gas to a gap between a pad 5 and a wafer 2 to be processed. In this cleaning apparatus, the pad 5 is placed near to the wafer 2 to be processed without collision by improving the shape of pad 5 and the method for holding the wafer to be processed. Consequently, higher cleaning capability can be realized. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method and an apparatus for cleaning a wafer in a semiconductor device manufacturing process, and more particularly to a technique for removing foreign matter and the like remaining on a wafer surface after a plasma process or a planarization process in a semiconductor device manufacturing process in a vacuum. .
[0002]
[Prior art]
Conventionally, wafer cleaning is performed by using pure water or a solution obtained by diluting various acids or alkali solutions in pure water, and immersing the wafer in the solution or spraying the solution to wash away foreign substances on the wafer surface. . Further, a method of mechanically cleaning the wafer surface with a brush while immersing the wafer in a solution is also used.
[0003]
[Problems to be solved by the invention]
Since the conventional cleaning method described above is basically a wet cleaning method using water, it has the following problems.
1) If processing in a vacuum such as dry etching or plasma CVD is performed continuously and continuously in a vacuum, processing accuracy and manufacturing efficiency can be improved. However, since the cleaning required after each processing is a wet processing, the wafer must be once exposed to the atmosphere. Therefore, the effect described above cannot be obtained.
2) In wet cleaning, rinsing and drying steps are required in addition to cleaning, which leads to an increase in the number of manufacturing steps.
3) In wet cleaning, the extreme surface of the semiconductor material is modified, and as the semiconductor is miniaturized, the yield is reduced due to the surface modification.
4) In wet cleaning, the liquid may not sufficiently penetrate into the fine structure due to the surface tension of the liquid, and the cleaning power in the fine structure may be insufficient.
5) Highly hygroscopic materials such as organic films and porous organic films will be required for high-performance devices in the future as new materials for semiconductor devices, especially insulating film materials. In manufacturing, wet cleaning or even exposure to air alone can cause device degradation.
In order to solve these problems, the present inventors have developed a dry cleaning method that combines a physical cleaning effect by a high-speed gas flow formed on a wafer in a vacuum and a chemical cleaning effect by plasma (Japanese Patent Application No. 2001-131). 7158), a dry cleaning apparatus (Japanese Patent Application No. 2001-7157), and a dry cleaning method (Japanese Patent Application No. 2001-7156) for simultaneously cleaning the front and back surfaces of a wafer using this method.
In the dry cleaning method, a gas is ejected between a wafer to be processed and a pad, and the pad is brought close to the wafer to be processed while applying a load to form a high-speed gas flow. The closer the pad is to the target wafer, the greater the frictional stress exerted by the gas flow on the surface of the target wafer, and the better the cleaning performance.
However, at the same time, the closer the pad is to the wafer to be processed, the greater the possibility that the pad and the wafer to be processed are in direct contact. As a result of study, it has been found that as the cleaning power is improved, there is a possibility that new foreign matter is generated by direct contact between the pad and the wafer to be processed or the wafer to be processed is broken. In order that the pad does not directly contact the wafer to be processed, adjacent surfaces must be kept parallel to each other.
An object of the present invention is to solve the above-mentioned problems, improve the detergency and obtain a stable detergency.
The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.
[0004]
[Means for Solving the Problems]
The following is a brief description of an outline of typical inventions disclosed in the present application.
One aspect of the present invention is a container, a vacuum evacuation unit connected to the container, a mechanism for pressing a structure against a wafer to be processed while applying a load, and supplying a gas to a gap between the structure and the wafer to be processed. A dry cleaning apparatus for cleaning the surface of the wafer to be processed in the container evacuated by the vacuum evacuation means, comprising: The distance between the wafers to be processed is larger than the distance between the structure and the wafer to be processed on the outer periphery of the structure, and the difference is 1 mm to 50 mm.
Another one of the present invention is a container, vacuum evacuation means connected to the container, a mechanism for pressing a structure against a wafer to be processed while applying a load, and a mechanism for pressing a structure to a wafer to be processed. Means for ejecting a gas, and a dry cleaning method using a dry cleaning apparatus for cleaning the surface of the wafer to be processed in the container evacuated by the vacuum evacuation means, , The gas pressure on the surface of the wafer to be processed is not uniform and the maximum difference is 10 kPa or more.
According to the present invention, dry cleaning can be performed without generation of new foreign substances or destruction of a wafer to be processed. Further, by using the present invention, it becomes possible to manufacture a semiconductor device having an ultrafine structure of 0.1 μm level including a use of a material that is not suitable for wet cleaning at low cost and with high precision.
Further, it is possible to easily form a process module for performing a plurality of steps of a semiconductor device manufacturing process performed in a vacuum atmosphere consistently, and it is possible to construct a semiconductor manufacturing system with improved process accuracy and cost performance.
[0005]
BEST MODE FOR CARRYING OUT THE INVENTION
(Embodiment 1)
Hereinafter, embodiments of the dry cleaning method of the present invention will be described.
First, a dry cleaning apparatus applied to the dry cleaning method of the present invention will be described. FIG. 1 shows a basic configuration diagram. A wafer 2 to be processed and a wafer mounting means 3 for mounting the wafer 2 to be processed, a pad 5, and a pad arm 6 supporting the pad are installed in a container 1 having a vacuum evacuation means.
In this embodiment, the dry pump 15 and the mechanical booster pump 14 are used as the evacuation means. However, the same effect can be obtained by using any method of evacuation means such as a turbo molecular pump. In the present embodiment, an 8-inch wafer is used as the wafer 2 to be processed. However, a similar effect can be obtained even with a 4-inch wafer or a 12-inch wafer.
The processed wafer setting means 3 is rotated by a wafer rotating mechanism 4. At this time, the wafer setting means 3 holds the processed wafer 2 so that the processed wafer setting means 3 and the processed wafer 2 can rotate together.
The pad 5 can be moved by a vertical movement mechanism 7 and a scanning mechanism 8 connected to a pad arm 6. The vertical movement mechanism 7 can change the distance between the pad 5 and the processing target wafer 2, and can press the pad 5 against the processing target wafer 2 while applying a load to the pad 5. The load applied to the pad 5 was measured by the load measuring device 21.
In the present embodiment, a strain measuring device is used as the load measuring device 21. The vertical moving mechanism 7 and the load measuring device 21 are connected to the circuit box 18, and the circuit box 18 adjusts the moving amount of the vertical moving mechanism 7 so that the load detected by the load measuring device 21 is maintained at a desired load. it can.
On the other hand, the scanning mechanism 8 can move the pad 5 in parallel with the processing surface of the processing target wafer 2. The pad 5 can be moved over the entire surface of the wafer 2 by moving the pad 5 by the scanning mechanism 8 and simultaneously rotating the wafer 2 by the wafer rotating mechanism 4. A plasma generating means 9 is provided on the upper part of the vacuum vessel 1.
In the present embodiment, a plasma generation unit using an electromagnetic wave in the UHF wave band, which includes the UHF power supply 10, the tuner 11, the antenna 12, and the dielectric 13, is used. The same effect can be obtained by using microwave waves or radio wave electromagnetic waves as the plasma generation means.
The wafer 2 to be processed is arranged in a diffusion region of the plasma generated by the plasma generating means 9 so that the wafer 2 is not excessively damaged by the plasma. Gas introduction into the vacuum chamber 1 was divided into two systems, a pad gas introduction system 16 and a plasma gas introduction system 17. The gas introduced from the pad gas introduction system 16 is ejected from the center of the pad 5 to the space between the pad 5 and the wafer 2 to be processed, and mainly forms a high-speed gas flow for physically cleaning the wafer 2 to be processed and the wafer to be processed. 2 transports the foreign matter removed from the wafer 2 from above the wafer 2 to be processed. The gas introduced from the plasma gas introduction system 17 is introduced into the vacuum chamber 1 near the plasma generating means 9 and activated by plasma to provide a chemical cleaning effect.
In the present embodiment, the plasma gas introduction system 17 is introduced using the shower plate 20 installed below the antenna 12. The pressure in the vacuum vessel 1 was measured by a pressure measuring device 19.
[0006]
Next, a method of installing the pad 5 will be described.
In the present embodiment, the structure is such that the angle formed between the pad 5 and the adjacent surface of the processing target wafer 2 can be easily changed by the pressure of the gas injected between the pad 5 and the processing target wafer 2. When the pad 5 is brought close to the processing target wafer 2 while ejecting gas, the pad 5 is pushed back and supported by the gas pressure between the pad 5 and the processing target wafer 2. At this time, when the pad 5 is inclined with respect to the wafer 2 to be processed, the gas pressure increases at a place where the interval is small, and the gas pressure decreases at a place where the interval is small. In the above structure, the inclination of the pad changes due to this pressure difference, and the mutually adjacent surfaces of the pad 5 and the processing target wafer 2 become parallel in a self-aligned manner. As a result, the pad 5 and the processing target wafer 2 can be brought close to each other without making direct contact.
In the present embodiment, the above structure is made possible by connecting the pad 5 and the pad arm 6 using a spherical bearing 25 or a bearing structure 24 as shown in FIG. Furthermore, if the pad arm 6 and the pad 5 are connected using the spring 23, the distance between the pad arm 6 and the pad 5 is not completely fixed, so that the load applied to the pad 5 is accurately measured by the strain gauge 21. be able to.
[0007]
Next, the shape of the pad 5 will be described.
The surface of the pad 5 used in the present embodiment close to the wafer 2 to be processed has a circular shape with a diameter of 30 mm. The material is stainless steel, but the same effect can be obtained by using aluminum, delrin, Vespel, Kapton, silicon oxide, silicon, aluminum oxide, silicon carbide, or the like.
As shown in FIG. 2, the gas introduced from the pad gas introduction system 16 is ejected from a hole having a diameter of 2 mm provided at the center of the surface. Further, the surface of the pad 5 close to the processing target wafer 2 has a concave shape, and the distance between the pad 5 and the processing target wafer 2 increases toward the center.
As described above, when the pad 5 is brought closer to the processing target wafer 2, the gas 5 pressure between the pad 5 and the processing target wafer 2 makes the adjacent surfaces of the pad 5 and the processing target wafer 2 parallel. However, when the gas is ejected from the center of the pad, the gas pressure rapidly decreases from the center to the periphery, so that the pad 5 supported by the gas pressure often loses its balance and starts to vibrate. With the concave shape, the pressure change is reduced, and the pad 5 can be stably supported without vibrating. The concave shape may have a maximum depth 27 of 1 mm or more and a maximum diameter 26 of 1/4 or more of the maximum diameter of the pad 5.
[0008]
The method of holding the processed wafer by the processed wafer setting means 3 will be described.
As described above, the processing target wafer setting means 3 must hold the processing target wafer 2 so as to be able to rotate together with the processing target wafer 2. Further, since a large amount of gas is ejected from the pad 5, it is necessary to consider that the gas flows around the back surface of the processing target wafer 2 to lift the processing target wafer 2 and come into contact with the pad 5. Further, in order to clean the entire surface of the wafer 2 to be processed, the pad 5 must scan the entire surface, so that there must be no protrusion toward the pad 5 side.
In the present embodiment, as shown in FIG. 3, the processing target wafer 2 is accommodated, a recess 28 is provided which is shallower than the thickness of the processing target wafer 2, and the processing target wafer 2 is placed there. The rotational force of the processing target wafer 2 is transmitted from the processing target wafer setting means 3 by the frictional force between the processing target wafer setting means 3 and the processing target wafer 2.
A groove 29 was formed in the depression, and a hole 30 penetrating through the wafer setting means 3 was provided. The gas which has flowed to the back surface of the processing target wafer 2 can be exhausted by these grooves and holes, so that the processing target wafer 2 does not rise.
Similarly, in order to prevent the processing target wafer 2 from being lifted by the gas, the effect can be obtained even if the processing target wafer is strongly brought into close contact with the processing target wafer setting means 3 using an electrostatic chuck or a mechanical chuck.
Further, by adding a temperature adjustment mechanism such as flowing a coolant to the processing target wafer holding means 3 and installing a heater, and controlling the temperature of the processing target wafer 2, the cleaning effect can be further improved.
[0009]
A cleaning procedure applied to the dry cleaning method according to the present embodiment will be described.
In the cleaning procedure, the pad 5 is moved away from the processing target wafer setting means 3 by the vertical movement mechanism 7 in the vacuum vessel 1 evacuated by the vacuum evacuation means, and the processing target wafer 2 is set on the processing wafer setting means 3.
Next, the processed wafer 2 is rotated together with the processed wafer setting means 3 by the wafer rotating mechanism 4. Although the rotation speed was set to 100 rpm, the effect of shaking can be obtained even when the rotation speed is set to 10 to 200 rpm. Subsequently, the pad 5 is made to approach the wafer 2 to be processed by the vertical movement mechanism 7, and gas is ejected from the pad gas introduction system 16.
In the present embodiment, when the pad 5 reaches a distance of 5 mm from the wafer 2 to be processed, gas is ejected. Although 25 slm of argon gas was introduced from the pad gas introduction system, it is also effective to introduce 0.5 to 500 slm of helium, neon, nitrogen, oxygen, carbon dioxide, or a mixture thereof. Further, a gas is also introduced from the plasma gas introduction system 17. CF4 and oxygen gas were introduced from the plasma gas introduction system. The use of Ar, SF6, Cl2, F2, HF or hydrogen gas in the plasma gas introduction system is also effective.
When the gas reaches the set flow rate, plasma is generated in the vacuum vessel 1 by the plasma generating means 9. When the pad 5 is further moved closer to the processing target wafer 2 by the vertical movement mechanism 7, the space between the pad 5 and the processing target wafer 2 becomes narrower, the pressure of the jetted gas increases, and the pad 5 moves to the processing target wafer 2. Although a repulsive force is generated that hinders the approach, the vertical movement mechanism 7 applies a load to forcibly bring the pad 5 closer to the wafer 2 to be processed.
The load applied to the pad 5 is detected from the load measuring device 21. Even when a load is applied to the pad 5, the gas is ejected from the pad gas introduction system between the pad 5 and the processing target wafer 2, so that the pad 5 does not directly contact the processing target wafer 2.
Further, the gas introduced into the pad gas introduction system needs to be pressurized and supplied according to the gas pressure between the pad 5 and the wafer 2 to be processed. In fact, under the conditions of the present embodiment, the gas does not flow unless the pressure is increased to 0.3 MPa, and the gas pressure between the pad 5 and the wafer 2 to be processed is considered to be about 0.3 MPa. In order to supply a sufficient gas flow rate, it is necessary to further pressurize and supply, and in this embodiment, it is set to 0.8 MPa. On the other hand, the inside of the vacuum vessel 1 is evacuated by vacuum evacuation means, and the gas pressure is set to 300 Pa at a position away from the pad 5.
Therefore, the gas pressure fluctuates between about 300 Pa and about 0.3 MPa due to the swing of the pad 5 on the surface of the wafer to be processed. This pressure fluctuation contributes to improving the cleaning power inside the fine structure on the surface of the wafer to be processed. Since it is known that the adhesive force of 0.1 mm particles is several nN, a cleaning effect is obtained if the pressure fluctuation width is 10 kPa or more. Further, the lower the gas pressure in the vacuum vessel, the lower the probability of re-adhesion of the removed foreign matter to the processing target wafer 2, thereby improving the cleaning efficiency.
When the load detected by the pad 5 and the wafer 2 to be processed 2 from the vacuum vessel load measuring device 21 reaches a predetermined load, the scanning mechanism 8 moves the pad 5 in parallel with the surface of the wafer 2 to be processed. The scanning mechanism 8 in the present embodiment is of a type in which the pad 5 is moved on the circumference of the processing target wafer 2 with the radius of the pad arm 6. The pad 5 to which the load is applied and which is close to the wafer 2 to be processed is adjusted by the vertical movement mechanism 7 so that the load detected from the load measuring device 21 is always maintained at a preset load.
In the present embodiment, the set value of the load is set to 120 N, and the distance between the pad 5 and the adjacent surface of the processing target wafer 2 is kept at 30 mm ± 3 mm. The same effect is obtained if the distance is 1 mm to 100 mm, and the load is effective when the distance is 15 N to 600 N. This load is 2 × 10 ⁴ N / m ^{2 to} 8.5 × 10 ⁵ N / m ² when averaged on the surface of the pad 5 close to the processing target wafer 2. After performing the same number of scans at a preset scan speed, the plasma generation by the plasma generation means 9 is stopped, and the pad 5 is moved away from the wafer 2 to be processed by the vertical movement mechanism 7.
In the present embodiment, the scanning speed from the center to the edge of the wafer is 30 seconds, and one scan is performed from the center to the edge to the center. The gas introduction is stopped when the pad 5 is moved far enough to prevent the possibility that the pad 5 comes into contact with the wafer 2 to be processed.
In the present embodiment, the introduction of gas is stopped when the pad 5 is separated from the wafer 2 by 5 mm. Further, after the pad 5 is moved away from the processing target wafer 2 to a position sufficient to take out the processing target wafer 2, the processing target wafer 2 is taken out, and the cleaning process is completed.
[0010]
With the use of the above-described cleaning apparatus and cleaning method, foreign substances adhering to a semiconductor device wafer can be stably removed in a vacuum with high efficiency and without damaging the wafer. Although the present embodiment has been described assuming a wafer for a semiconductor device as the wafer 2 to be processed, other devices having a fine structure such as a display device such as a liquid crystal panel or a plasma display panel, a magnetic recording disk, and an optical recording disk Alternatively, the present invention can be applied to cleaning of a substrate.
(Embodiment 2)
In the present embodiment, an embodiment in which the shape of the pad is devised will be described.
[0011]
In the present embodiment, the groove shown in FIG. 4 is provided on the outer periphery of the concave shape. When a variation is applied to the gas flow as in the groove processing, a turbulent flow can be generated in the gas flow flowing between the pad 5 and the wafer 2 to be processed. In the turbulent flow, the gas flow velocity rapidly increases near the surface of the wafer 2 as the distance from the surface of the wafer 2 increases. When the gas flow velocity gradient is increased as described above, the frictional stress acting on the surface of the wafer 2 is increased, so that the foreign matter cleaning ability on the surface of the wafer 2 is improved. The groove in FIG. 4 is machined in a triple concentric shape centered on the center of the pad 5, and a uniform turbulence can be generated on the circumference along the groove. (Embodiment 3)
In this embodiment, another embodiment in which the shape of the pad is devised will be described.
[0012]
In the example shown in FIG. 5, grooves that are not continuous in the circumferential direction are machined. In this case, a more extreme turbulence can be generated at the end of the groove, though it is not uniform on the circumference. In such a turbulent flow, the gas flow velocity rapidly increases near the surface of the wafer 2 as the distance from the surface of the wafer 2 increases. When the gas flow velocity gradient is increased, the frictional stress acting on the surface of the wafer 2 is increased, so that the foreign matter cleaning ability on the surface of the wafer 2 is further improved. (Embodiment 4)
As described above, in the cleaning apparatus of this system, the pad 5 and the wafer 2 to be processed are kept at an arbitrary distance of 100 mm or less by the load measuring device 21 and the vertical mechanism 7. However, if an unintended vibration is transmitted from the outside of the apparatus and the pad 5 and the wafer 2 to be processed vibrate with an amplitude of about the above distance, it becomes difficult to maintain the above distance. Therefore, in the present embodiment, as shown in FIG. 6, by installing the present apparatus on the vibration isolation table 31, vibration from the floor on which the apparatus is installed is eliminated.
Since the pump generates vibration, the mechanical booster pump 14 and the dry pump 15 are not installed on the vibration isolation table 31. Further, the mechanical booster pump 14, the dry pump 15 and the vacuum vessel 1 were connected by an anti-vibration pipe 32 so that the vibration of the pump was not transmitted to the vacuum vessel. Bellows piping or piping using a material with a small Young's modulus, such as rubber, is suitable as the seismic isolation piping. As a result, the pad 5 and the processing target wafer 2 can be stably brought close to each other, so that the cleaning power of the present cleaning apparatus can be improved.
[0013]
【The invention's effect】
ADVANTAGE OF THE INVENTION According to this invention, the foreign substance of a to-be-processed wafer can implement | achieve highly efficient cleaning processing in a vacuum. As a result, in addition to the effect of simplifying the manufacturing process and improving the yield, cleaning can be performed even if the target wafer contains a material that cannot be wet-cleaned, and the effect of reducing the surface modification of the target wafer due to cleaning can be obtained. can get.
Therefore, the manufacturing cost of the semiconductor device can be reduced and the processing accuracy can be improved.
[Brief description of the drawings]
FIG. 1 is a basic configuration diagram according to a first embodiment.
FIG. 2 is a detailed explanatory diagram of a pad according to the first embodiment.
FIG. 3 is a configuration diagram of a processing target wafer setting unit in the first embodiment.
FIG. 4 is an explanatory diagram of a pad having a groove formed on a surface according to a second embodiment;
FIG. 5 is an explanatory diagram of another pad having a groove processed on its surface in the third embodiment.
FIG. 6 is a configuration diagram of a cleaning apparatus using a vibration isolation table according to a fourth embodiment.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Vacuum container, 2 ... Wafer to be processed, 3 ... Wafer installation means, 4 ... Wafer rotation mechanism, 5 ... Pad, 6 ... Pad arm, 7 ... Vertical movement mechanism, 8 ... Scanning mechanism, 9 ... Plasma generation means Reference numeral 10 UHF power supply 11 Tuner 12 Antenna 13 Dielectric 14 Mechanical booster pump 15 Dry pump 16 Pad gas introduction system 17 Plasma gas introduction system 18 Circuit box 19 ... pressure measuring instrument, 20 ... shower plate, 21 ... load measuring instrument, 22 ... variable valve, 23 ... spring, 24 ... bearing mechanism, 25 ... spherical bearing, 26 ... pad concave shape maximum diameter, 27 ... pad concave shape Maximum depth, 28: recess of wafer setting means, 29: groove of wafer setting means, 30: hole of wafer setting means, 31: anti-vibration table, 32 JoShin piping.

Claims (12)

A container, vacuum evacuation means connected to the container, a mechanism for pressing a structure against a wafer to be processed while applying a load, and means for ejecting gas into a gap between the structure and the wafer to be processed. A dry cleaning apparatus for cleaning the surface of the wafer to be processed in the container evacuated by the evacuation means, wherein the distance between the structure and the wafer at the center of the structure is A dry cleaning apparatus characterized in that it is larger than the distance between the structure and the wafer to be processed on the outer periphery of the structure, and the difference is 1 mm to 50 mm. A container, vacuum evacuation means connected to the container, a mechanism for pressing a structure against a wafer to be processed while applying a load, and means for ejecting gas into a gap between the structure and the wafer to be processed. A dry cleaning apparatus for cleaning the surface of the wafer to be processed in the container evacuated by the vacuum evacuation means, wherein the wafer to be processed is placed on a surface provided with grooves and holes. Features a dry cleaning device. A container, vacuum evacuation means connected to the container, a mechanism for pressing a structure against a wafer to be processed while applying a load, and means for ejecting gas into a gap between the structure and the wafer to be processed. A dry cleaning apparatus for cleaning the surface of the wafer to be processed in the container evacuated by the vacuum evacuation means, wherein the gas pressure on the surface of the wafer to be processed during the cleaning process is not uniform and has a maximum difference. Is 10 kPa or more. A container, vacuum evacuation means connected to the container, a mechanism for pressing a structure against a wafer to be processed while applying a load, and means for ejecting gas into a gap between the structure and the wafer to be processed. A dry cleaning apparatus for cleaning the surface of the wafer to be processed in the container evacuated by the vacuum evacuation means, wherein the load is averaged on a surface of the structure close to the wafer to be processed. A dry cleaning device characterized by 2 × 10 ⁴ to 8 × 10 ⁵ N / m ² . A container, vacuum evacuation means connected to the container, a mechanism for pressing a structure against a wafer to be processed while applying a load, and means for ejecting gas into a gap between the structure and the wafer to be processed. A dry cleaning method using a dry cleaning device for cleaning the surface of the wafer to be processed in the container evacuated by the vacuum evacuation means, wherein the gas pressure on the surface of the wafer to be processed during the cleaning process is Is a non-uniform, and the maximum difference is 10 kPa or more. A container, vacuum evacuation means connected to the container, a mechanism for pressing a structure against a wafer to be processed while applying a load, and means for ejecting gas into a gap between the structure and the wafer to be processed. A dry cleaning method using a dry cleaning device for cleaning the surface of the wafer to be processed in the container evacuated by the vacuum exhaust means, wherein the load is applied to the wafer to be processed of the structure. A dry cleaning method characterized by an average of 2 × 10 ⁴ to 8 × 10 ⁵ N / m ^{2 on} an adjacent surface. A container, vacuum evacuation means connected to the container, a mechanism for pressing a structure against a wafer to be processed while applying a load, and means for ejecting gas into a gap between the structure and the wafer to be processed. A dry cleaning apparatus for cleaning the surface of the wafer to be processed in the container evacuated by the vacuum evacuation means, wherein a groove is formed on a surface of the structure adjacent to the wafer to be processed. Features a dry cleaning device. A container, vacuum evacuation means connected to the container, a mechanism for pressing a structure against a wafer to be processed while applying a load, and means for ejecting gas into a gap between the structure and the wafer to be processed. A dry cleaning apparatus for cleaning the surface of the wafer to be processed in the container evacuated by the vacuum evacuation means, wherein the apparatus is circumferentially continuous with a surface of the structure adjacent to the wafer to be processed. Dry cleaning device characterized in that there is a non-groove. A dry cleaning apparatus for generating a gas flow between a wafer and a structure for gas ejection that are close to each other to clean a main surface of the wafer; and a vibration isolation table, wherein the dry cleaning apparatus includes the vibration isolation table. A semiconductor manufacturing apparatus installed in a semiconductor device. A container, vacuum evacuation means connected to the container, a mechanism for pressing a structure against a wafer to be processed while applying a load, and means for ejecting gas into a gap between the structure and the wafer to be processed. A dry cleaning apparatus for cleaning the surface of the wafer to be processed in the container evacuated by the vacuum evacuation means, wherein the apparatus is provided between the container and a floor on which the container is installed, or between the container and the vacuum A dry cleaning apparatus characterized in that a vibration isolation mechanism is installed between the exhaust means and both of them. 11. The dry cleaning apparatus according to claim 1, further comprising means for generating a plasma in the container. 7. The dry cleaning method according to claim 5, wherein plasma is generated in the container.

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