JP2004055843A5 - - Google Patents

Download PDF

Info

Publication number
JP2004055843A5
JP2004055843A5 JP2002211602A JP2002211602A JP2004055843A5 JP 2004055843 A5 JP2004055843 A5 JP 2004055843A5 JP 2002211602 A JP2002211602 A JP 2002211602A JP 2002211602 A JP2002211602 A JP 2002211602A JP 2004055843 A5 JP2004055843 A5 JP 2004055843A5
Authority
JP
Japan
Prior art keywords
region
area
gate electrode
thin film
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2002211602A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004055843A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002211602A priority Critical patent/JP2004055843A/ja
Priority claimed from JP2002211602A external-priority patent/JP2004055843A/ja
Publication of JP2004055843A publication Critical patent/JP2004055843A/ja
Publication of JP2004055843A5 publication Critical patent/JP2004055843A5/ja
Withdrawn legal-status Critical Current

Links

JP2002211602A 2002-07-19 2002-07-19 薄膜トランジスタ又は半導体装置及びそれらの設計方法 Withdrawn JP2004055843A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002211602A JP2004055843A (ja) 2002-07-19 2002-07-19 薄膜トランジスタ又は半導体装置及びそれらの設計方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002211602A JP2004055843A (ja) 2002-07-19 2002-07-19 薄膜トランジスタ又は半導体装置及びそれらの設計方法

Publications (2)

Publication Number Publication Date
JP2004055843A JP2004055843A (ja) 2004-02-19
JP2004055843A5 true JP2004055843A5 (https=) 2005-10-27

Family

ID=31934790

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002211602A Withdrawn JP2004055843A (ja) 2002-07-19 2002-07-19 薄膜トランジスタ又は半導体装置及びそれらの設計方法

Country Status (1)

Country Link
JP (1) JP2004055843A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101870460B1 (ko) * 2009-07-18 2018-06-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
CN108496277B (zh) * 2016-01-29 2020-09-08 夏普株式会社 扫描天线

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3256110B2 (ja) * 1995-09-28 2002-02-12 シャープ株式会社 液晶表示装置
JP4063936B2 (ja) * 1997-12-19 2008-03-19 松下電器産業株式会社 半導体集積回路の製造方法
JP3298528B2 (ja) * 1998-12-10 2002-07-02 日本電気株式会社 回路設計方法および装置、情報記憶媒体、集積回路装置
JP2001210716A (ja) * 2000-01-25 2001-08-03 Nec Ic Microcomput Syst Ltd レイアウト設計方法
JP2001223275A (ja) * 2000-02-09 2001-08-17 Nec Corp 半導体装置及びその製造方法

Similar Documents

Publication Publication Date Title
JP2020194966A5 (https=)
EP1843390A4 (en) MIS STRUCTURE EQUIPPED SEMICONDUCTOR AND METHOD FOR THE PRODUCTION THEREOF
JP2000196037A5 (ja) 半導体集積回路装置
JP2009135140A5 (https=)
TW200715562A (en) Thin film transistor substrate and fabrication thereof
KR930020661A (ko) 반도체 디바이스
JP2006313906A5 (https=)
JP2026034497A5 (https=)
TW200505274A (en) Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device
TW200734780A (en) Display device and manufacturing method therefor
CN1290191C (zh) 集成电路器件及其制造方法
JPH10125928A5 (https=)
JP2003229578A5 (https=)
TW345746B (en) Upper gate type thin film transistor and process for producing the same
TW200723531A (en) Semiconductor device and semiconductor device manufacturing method
JP2004134687A5 (https=)
US5856693A (en) Semiconductor integrated circuit device containing MOS protection circuit
TW200703666A (en) Thin film transistor
TW200705668A (en) Thin film transistor substrate and manufacturing method thereof
TW200711145A (en) Organic thin film transistor array panel and method for manufacturing the same
TW200711140A (en) Thin film transistor substrate and method for fabricating the same
JP2004055843A5 (https=)
KR920003550A (ko) 반도체 장치
KR930009127A (ko) Mos형 트랜지스터 반도체 장치 및 그 제조방법
KR100611743B1 (ko) 멀티플 게이트 박막 트랜지스터