JP2004047540A - Heat treatment apparatus - Google Patents
Heat treatment apparatus Download PDFInfo
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- JP2004047540A JP2004047540A JP2002199914A JP2002199914A JP2004047540A JP 2004047540 A JP2004047540 A JP 2004047540A JP 2002199914 A JP2002199914 A JP 2002199914A JP 2002199914 A JP2002199914 A JP 2002199914A JP 2004047540 A JP2004047540 A JP 2004047540A
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Description
【0001】
【発明の属する技術分野】
本発明は、半導体デバイス等の製造の際に用いられる被処理体に熱処理を加える縦型の熱処理装置に関する。
【0002】
【従来の技術】
半導体デバイスの製造においては、半導体ウエハ(被処理体)に酸化、拡散、CVD、アニール等の処理を施すために、各種の熱処理装置が使用されている。このような熱処理装置の一つとして縦型の熱処理装置が知られている。縦型の熱処理装置は、複数枚のウエハを上下方向に所定間隔で支持したボートを縦型熱処理炉の上部に保温体である断熱構造体を介して載置することで、ウエハを炉内の均熱領域で熱処理するようにしたものである。この縦型の熱処理装置においては、炉内における均一な熱処理を達成するために、炉口及びその周囲からの熱の逃げを如何に防止するかが重要な課題となっている。
【0003】
そこで、炉口の断熱効果を向上させるために、断熱構造体の材質として熱通過を防止する不透明石英製の断熱板により構成した縦型の熱処理装置が提案されている(特開平6−208954号公報参照)。具体的には、断熱構造体は、複数本の支柱と、これら支柱に上下方向に所定の間隔で設けられた複数枚の不透明石英製断熱板とから構成されている。
【0004】
【発明が解決しようとする課題】
上述した熱処理装置にあっては次のような問題があった。すなわち、熱処理装置の保温体においては、等しい厚さの断熱板を等間隔で配置することで伝熱量(熱通過量)を制御している。しかしながら、伝熱量を所定値よりは低減できず、ウエハを熱処理する均熱領域の拡大、すなわちウエハ処理枚数増加には限界があった。
【0005】
そこで、本発明は、均熱領域を拡大し被処理体の処理数を増加するために、伝熱量を低減できる保温体を有する熱処理装置を提供することを目的としている。
【0006】
【課題を解決するための手段】
上記課題を解決し目的を達成するために、本発明の熱処理装置は次のように構成されている。
【0007】
(1)複数の被処理体に熱処理を施す熱処理装置において、その一端側に開口部を有する熱処理容器と、この熱処理容器内の他端側に配置され、上記被処理体を保持する被処理体保持部と、上記被処理体保持部の少なくとも一端部を保持すると共に熱処理時に上記熱処理容器内を保温する保温体とを備え、上記保温体は、所定の境界位置に対し上記被処理体保持部側に配置された1枚の厚肉断熱板と、上記境界位置に対し上記開口部側に配置され、所定の間隔をもって積層配置された複数枚の薄肉断熱板と、これら厚肉断熱板及び薄肉断熱板を水平に支持する支持体とを備えていることを特徴とする。
【0008】
(2)上記(1)に記載された熱処理装置であって、上記境界位置は、上記厚肉断熱板及び上記薄肉断熱板の熱伝導率をλ、境界部の温度をT、微小距離の温度差をΔT、設置可能な上記薄肉断熱板の最小間隔をΔZ、ステファンボルツマン係数をσ、形態係数をFA、黒度関係をFEとしたときに、
λΔT/ΔZ=σFAFE(T4−(T−ΔT)4)
が成立する位置であることを特徴とする。
【0009】
(3)上記(1)に記載された熱処理装置であって、上記薄肉断熱板を薄肉化し、かつ、上記所定の間隔を狭くすることで、薄肉断熱板相互間輻射回数を増加させ、断熱効果を増加させるものであることを特徴とする。
【0010】
【発明の実施の形態】
図1は本発明の第1の実施の形態に係る縦型の熱処理装置10を示す縦断面図である。熱処理装置10は、中空部11aを有するとともに断熱材で形成された炉本体11を備えている。炉本体11の下部には炉口12が設けられている。
【0011】
炉本体11の中空部11aの壁面にはヒータ13が設けられ、さらに炉芯管14が設けられている。また、炉本体11の中空部11aの底部から保温体20が設けられ、さらに保温体20の上部にはウエハWを載置するボート30が設けられている。
【0012】
保温体20は、円筒状に形成された支持材21が設けられている。支持材21の境界位置Pの下方には、炉口側薄肉断熱板22が複数枚配置され、境界位置Pの上方にはボート側厚肉断熱板23が配置されている。なお、保温体20は熱を吸収するための気泡を内部に分散させた不透明石英で形成されている。
【0013】
ここで、熱伝導による伝熱量と輻射による伝熱量との違いについて説明する。すなわち、図2に示すように、熱伝導による伝熱量は、温度差が等しい場合は温度によらず一定となる。一方、輻射による伝熱量は、温度差が等しくとも高温となるほど大きくなる。したがって、熱伝導の方が熱が伝わりにくくなる高温側の領域では、一枚の厚肉断熱板を用い熱伝導による伝熱を行わせることで伝熱量を低減できる。また、輻射の方が熱が伝わりにくくなる低温側の領域では、加工可能な限り多くの薄肉断熱板を配置し、輻射の回数を多くすることで、伝熱量を低減できる。なお、薄肉断熱板の枚数は、薄肉断熱板自体の加工性と、薄肉断熱板相互間の間隙をどの程度まで近付けて配置できるかという支持材21の加工性によって定まる。
【0014】
次に、熱伝導による熱通過量と輻射による熱通過量とが均衡する位置である炉口側薄肉断熱板22及びボート側厚肉断熱板23との境界位置Pの設定方法について説明する。
【0015】
炉口側薄肉断熱板22及びボート側厚肉断熱板23を構成する材料の熱伝導率をλ、温度をT、温度差をΔT、加工可能な最小間隔をΔZ、ステファンボルツマン係数をσ、形態係数をFA、黒度関係をFEとし、熱伝導による伝熱量を左辺に、輻射による伝熱量を右辺におくと、式(1)に示すようになる。すなわち、
λΔT/ΔZ=σFAFE(T4−(T−ΔT)4) …(1)
となる。この式(1)に基づいて保温体20における境界位置Pを設定することにより、式(1)が成立するよりも高温領域(ボート30側)では1枚のボート側厚肉断熱板23を、低温領域(炉口12側)では加工可能な限り薄肉とし狭い間隔で配置した炉口側薄肉断熱板22から構成する。
【0016】
ここで実施例として次のような条件を設定する。すなわち、保温体20を全高500mm、径300mmとする。また、保温体20の温度が上部が1200℃、下部が500℃、加工可能な炉口側薄肉断熱板22の最小厚と加工可能な炉口側薄肉断熱板22の最小間隔ΔZを10mmとする。また、炉口側薄肉断熱板22の形状と間隔から計算される形態係数をFA、炉口側薄肉断熱板22及びボート側厚肉断熱板23の熱伝導率λを1.6×10−3W/mm℃、黒度関係FEを0.5、ステファンボルツマン係数σを5.6687×10−14W/mm2K4とする。
【0017】
式(1)に基づいて境界位置Pを算出すると、ボート側厚肉断熱板23の厚さを280mmとし、厚さ10mmの炉口側薄肉断熱板22を10mmの間隔で11枚配置した場合が、保温体20を通過する伝熱量が最も少なくなる。なお、図3は、本実施例において式(1)に基づいてボート側厚肉断熱板23の厚さと保温体20を通過する熱流束との関係を示す図である。
【0018】
上述したように、保温体20において伝熱量を最小限に抑えることにより、ウエハWを熱処理する均熱領域の拡大を図ることができ、ウエハ処理枚数を増加させることができる。
【0019】
なお、本発明は前記実施の形態に限定されるものではなく、本発明の要旨を逸脱しない範囲で種々変形実施可能であるのは勿論である。
【0020】
【発明の効果】
本発明によれば、均熱領域を拡大し被処理体の処理数を増加するために、伝熱量を低減することが可能となる。
【図面の簡単な説明】
【図1】
本発明の一実施の形態に係る縦型の熱処理装置の構成を示す図。
【図2】
同熱処理装置におけるボート側厚肉断熱板の厚さと保温体を通過する熱流速と
の関係を示す図。
【図3】
境界位置の温度と輻射による伝熱量と熱伝導による伝熱量との関係を示す図。
【符号の説明】
10…熱処理装置
11…炉本体
12…炉口
20…保温体
21…支持材
22…炉口側薄肉断熱板
23…ボート側厚肉断熱板
30…ボート[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a vertical heat treatment apparatus that applies heat treatment to a processing target used in manufacturing a semiconductor device or the like.
[0002]
[Prior art]
In the manufacture of semiconductor devices, various heat treatment apparatuses are used to perform processes such as oxidation, diffusion, CVD, and annealing on a semiconductor wafer (object to be processed). As one of such heat treatment apparatuses, a vertical heat treatment apparatus is known. The vertical type heat treatment apparatus mounts a boat supporting a plurality of wafers at predetermined intervals in a vertical direction on an upper portion of a vertical type heat treatment furnace via a heat insulating structure which is a heat insulator, and places the wafers in the furnace. The heat treatment is performed in the soaking region. In this vertical heat treatment apparatus, how to prevent heat from escaping from the furnace port and its surroundings is an important issue in order to achieve uniform heat treatment in the furnace.
[0003]
Therefore, in order to improve the heat insulating effect of the furnace port, there has been proposed a vertical heat treatment apparatus constituted by an opaque quartz heat insulating plate for preventing heat passage as a material of the heat insulating structure (Japanese Patent Laid-Open No. 6-208954). Gazette). Specifically, the heat insulating structure includes a plurality of columns and a plurality of opaque quartz heat insulating plates provided on the columns at predetermined intervals in the vertical direction.
[0004]
[Problems to be solved by the invention]
The heat treatment apparatus described above has the following problems. That is, in the heat retaining body of the heat treatment apparatus, the heat transfer amount (heat passing amount) is controlled by arranging the heat insulating plates having the same thickness at equal intervals. However, the amount of heat transfer cannot be reduced below a predetermined value, and there is a limit to the expansion of the soaking area for heat treatment of the wafer, that is, the increase in the number of processed wafers.
[0005]
In view of the above, an object of the present invention is to provide a heat treatment apparatus having a heat retaining body capable of reducing the amount of heat transfer in order to increase a heat equalizing region and increase the number of treatments of an object to be processed.
[0006]
[Means for Solving the Problems]
In order to solve the above problems and achieve the object, the heat treatment apparatus of the present invention is configured as follows.
[0007]
(1) A heat treatment apparatus for performing heat treatment on a plurality of objects to be processed, a heat treatment container having an opening at one end thereof, and an object disposed at the other end of the heat treatment container and holding the object to be processed. A holding part, and a heat retaining body that retains at least one end of the object-to-be-processed holding part and keeps the inside of the heat treatment container at the time of heat treatment; One thick heat insulating plate, a plurality of thin heat insulating plates disposed on the opening side with respect to the boundary position, and stacked and arranged at a predetermined interval; And a support for horizontally supporting the heat insulating plate.
[0008]
(2) The heat treatment apparatus according to (1), wherein the boundary position is λ, the thermal conductivity of the thick heat insulating plate and the thin thermal insulating plate is T, the temperature of the boundary portion is T, and the temperature of a minute distance. the difference [Delta] T, [Delta] Z a minimum interval can be installed above the thin insulating plates, the Stefan Boltzmann factor sigma, the view factor F a, the black level relationship is taken as F E,
λΔT / ΔZ = σF A F E (T 4 - (T-ΔT) 4)
Is a position at which
[0009]
(3) The heat treatment apparatus according to (1), wherein the number of radiations between the thin heat insulating plates is increased by reducing the thickness of the thin heat insulating plate and narrowing the predetermined interval. Is increased.
[0010]
BEST MODE FOR CARRYING OUT THE INVENTION
FIG. 1 is a vertical sectional view showing a vertical
[0011]
A
[0012]
The
[0013]
Here, the difference between the amount of heat transfer by heat conduction and the amount of heat transfer by radiation will be described. That is, as shown in FIG. 2, when the temperature difference is equal, the amount of heat transfer by heat conduction is constant regardless of the temperature. On the other hand, the amount of heat transferred by radiation increases as the temperature increases, even if the temperature difference is equal. Therefore, in a high-temperature region where heat conduction is less likely to be conducted by heat conduction, the amount of heat conduction can be reduced by performing heat conduction by heat conduction using a single thick heat insulating plate. Further, in a low temperature region where heat is less likely to be transmitted by radiation, as many thin heat insulating plates as possible can be arranged and the number of radiations can be increased to reduce the amount of heat transfer. Note that the number of thin heat insulating plates is determined by the workability of the thin heat insulating plates themselves and the workability of the
[0014]
Next, a method of setting a boundary position P between the furnace-port-side thin
[0015]
The thermal conductivity of the material constituting the furnace-port side
λΔT / ΔZ = σF A F E (T 4 - (T-ΔT) 4) ... (1)
It becomes. By setting the boundary position P in the
[0016]
Here, the following conditions are set as an example. That is, the
[0017]
When the boundary position P is calculated based on the equation (1), there is a case where the thickness of the boat-side thick heat insulating plate 23 is 280 mm, and 11 furnace-port-side thin
[0018]
As described above, by minimizing the amount of heat transfer in the
[0019]
It should be noted that the present invention is not limited to the above-described embodiment, and it goes without saying that various modifications can be made without departing from the spirit of the present invention.
[0020]
【The invention's effect】
ADVANTAGE OF THE INVENTION According to this invention, in order to enlarge a heat equalization area and to increase the number of processes of a to-be-processed object, it becomes possible to reduce the amount of heat transfer.
[Brief description of the drawings]
FIG.
FIG. 1 is a diagram showing a configuration of a vertical heat treatment apparatus according to one embodiment of the present invention.
FIG. 2
The figure which shows the relationship between the thickness of the boat side thick heat insulation board in the same heat processing apparatus, and the heat flow velocity which passes through a heat insulator.
FIG. 3
The figure which shows the relationship between the temperature of a boundary position, the amount of heat transfer by radiation, and the amount of heat transfer by heat conduction.
[Explanation of symbols]
DESCRIPTION OF
Claims (3)
その一端側に開口部を有する熱処理容器と、
この熱処理容器内の他端側に配置され、上記被処理体を保持する被処理体保持部と、
上記被処理体保持部の少なくとも一端部を保持すると共に熱処理時に上記熱処理容器内を保温する保温体とを備え、
上記保温体は、所定の境界位置に対し上記被処理体保持部側に配置された1枚の厚肉断熱板と、上記境界位置に対し上記開口部側に配置され、所定の間隔をもって積層配置された複数枚の薄肉断熱板と、これら厚肉断熱板及び薄肉断熱板を水平に支持する支持体とを備えていることを特徴とする熱処理装置。In a heat treatment apparatus for performing heat treatment on a plurality of objects to be processed,
A heat treatment container having an opening at one end thereof,
An object-to-be-processed holding part that is arranged at the other end side in the heat treatment container and holds the object to be processed,
A heat retaining body that retains at least one end of the object to be processed and heats the inside of the heat treatment container during heat treatment,
The heat insulator is disposed on the opening side with respect to the boundary position, with one thick heat insulating plate disposed on the processing object holding portion side with respect to a predetermined boundary position, and laminated with a predetermined interval. A heat treatment apparatus comprising: a plurality of thin heat insulating plates formed as described above; and a support that horizontally supports the thick heat insulating plates and the thin heat insulating plates.
λΔT/ΔZ=σFAFE(T4−(T−ΔT)4)
が成立する位置であることを特徴とする請求項1に記載の熱処理装置。The boundary position is the thermal conductivity of the thick heat insulating plate and the thin heat insulating plate is λ, the temperature of the boundary is T, the temperature difference of a minute distance is ΔT, the minimum interval of the thin heat insulating plate that can be installed is ΔZ, Stefan Boltzmann factor sigma, the view factor F a, the black level relationship is taken as F E,
λΔT / ΔZ = σF A F E (T 4 - (T-ΔT) 4)
The heat treatment apparatus according to claim 1, wherein:
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006032386A (en) * | 2004-07-12 | 2006-02-02 | Hitachi Kokusai Electric Inc | Thermal treatment equipment |
JP2007012774A (en) * | 2005-06-29 | 2007-01-18 | Shinetsu Quartz Prod Co Ltd | Heat insulation heat insulating tool for semiconductor wafer heat-treatment furnace |
JP2019502262A (en) * | 2015-12-18 | 2019-01-24 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Achieving uniform wafer temperature in an asymmetric chamber environment |
-
2002
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006032386A (en) * | 2004-07-12 | 2006-02-02 | Hitachi Kokusai Electric Inc | Thermal treatment equipment |
JP4700300B2 (en) * | 2004-07-12 | 2011-06-15 | 株式会社日立国際電気 | Heat treatment equipment |
JP2007012774A (en) * | 2005-06-29 | 2007-01-18 | Shinetsu Quartz Prod Co Ltd | Heat insulation heat insulating tool for semiconductor wafer heat-treatment furnace |
JP4519016B2 (en) * | 2005-06-29 | 2010-08-04 | 信越石英株式会社 | Heat insulation jig for semiconductor wafer heat treatment furnace |
JP2019502262A (en) * | 2015-12-18 | 2019-01-24 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Achieving uniform wafer temperature in an asymmetric chamber environment |
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