JP2004045606A - Device and method for evaluating electrophotographic photoreceptor, device and method for manufacturing electrophotographic photoreceptor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide the evaluating device and the evaluating method of an electrophotographic photoreceptor for accurately evaluating the characteristic value of film thickness or the like in the manufacturing process of the electrophotographic photoreceptor. <P>SOLUTION: The surface of a detection area 28a on the electrophotographic photoreceptor 28 is irradiated with light from a light source 12 through an optical fiber 14 and a measuring probe 16. The measuring probe 16 is arranged at a position deviated from a regularreflection optical path, and light reflected by a conductive base body surface is prevented from reaching the measuring probe 16 by successively passing through each layer again, so that the measuring probe 16 receives scattered light. Then, light made incident on the measuring probe 16 is collected by a spectrophotometer 18 through the optical fiber 16, and a spectral absorption ratio is calculated from spectrum obtained by the spectrophotometer 18 by a spectral absorption ratio arithmetic part 22, so that the film thickness or the characteristic value depending on the film thickness is obtained by a film thickness converting part 24. <P>COPYRIGHT: (C)2004,JPO

Description

となる。この関係式は、入射光量Ｌｉや基体表面の反射率Ｌｂを含んでいない。そのため、分光吸収比によって、光源光量の変動や光路長の変動などによる入射光量の変動、および、基体表面の反射率変動等の影響を受けずに光の吸収量を表わすことができる。
【００５２】
膜厚換算部２４は、分光吸収比演算部２２から得られるいくつかの分光吸収比を説明変数とし、予め求めて換算式記憶部２６に記憶された換算式によって、測定対象の層の膜厚や、膜厚に依存する各種の特性値を求める。例えば、目的変数が電荷発生層の膜厚である場合、説明変数である分光吸収比を得た同じ電子写真感光体２８について、例えば、切断面の拡大写真を透過型電子顕微鏡により撮影し、目的変数である実際の電荷発生層の膜厚を求める。この測定結果を用い、膜厚を目的変数、任意の分光吸収比を説明変数とした単回帰式を換算式として求め、換算式記憶部２６に記憶する。評価の際には、分光吸収比を説明変数として計算することにより、目的変数である電荷発生層の膜厚を求めることができる。なお、換算式の目的変数は、電子写真感光体の各層の膜厚に依存する特性値、例えば、を選択してもよい。
【００５３】
続いて、上述のように構成された電子写真感光体の評価装置１０の動作の一例を説明する。
【００５４】
光源１２からの光を光ファイバ１４及び測定プローブ１６を介して電子写真感光体２８上の検出エリア２８ａの表面に照射する。検出エリア２８ａに照射された光は、電子写真感光体２８の導電性基体上に形成された各層を順次通過して反射する系と、測定対象となる層内で散乱する系とに分かれる。導電性基体表面で反射された光は、再び各層を順次通過するが、測定プローブ１６が正反射光路からずれた位置にもうけられているため測定プローブ１６には到達しない。一方、散乱された光は、測定プローブ１６が散乱光を受光する位置（正反射光路からずれた位置）に設けられているため測定プローブ１６に到達する。換言すれば、測定プローブ１６には、散乱光のみが到達し、測定対象の膜自身やそれ以外の膜での光干渉がないので、測定プローブ１６に到達する光は、光干渉等による光量変動がなく、測定バラツキを防止することができる。。
【００５５】
測定プローブ１６に入射した光は、光ファイバ１４を介して、分光光度計１８の分光器に結像する。これにより、例えば、図４に示したような反射光のスペクトルを分光光度計１８で採取することができる。
【００５６】
得られたスペクトルは膜厚算出部２０の分光吸収比演算部２２に送られ、分光吸収比演算部２２において分光吸収比が計算され計算結果が膜厚換算部２４に入力される。膜厚換算部２４は、分光吸収比演算部２２で計算された分光吸収比を、換算式記憶部２６に予め記憶された換算式へ代入することによって、膜厚または膜厚に依存する特定値を精度良く求めることができる。
【００５７】
上述の動作は、電子写真感光体２８の１カ所の測定に限らず、例えば、電子写真感光体２８を回転させ、また電子写真感光体２８と測定プローブ１６とを図１中上下に相対移動させて、複数の検出エリアあるいは電子写真感光体２８の全面について、測定を行うことができる。
【００５８】
上述のようにして求められた膜厚または膜厚に依存する特定値は、そのままディスプレイやプリンタ等に出力したり、例えば、ある閾値と比較して良／不良の信号として出力することができる。
【００５９】
さらに、これらの出力を測定対象の層を形成する工程にフィードバックし、その工程の制御に用いることができる。これによって膜厚の管理を行い、工程の安定化、膜厚不良品の後工程への大量流出を防ぐことが可能な電子写真感光体の製造装置及び製造方法を得ることができる。
【００６０】
なお、本実施の形態では、換算式記憶部２６に記憶する換算式として、単回帰式を記憶し、単回帰分析の手法を用いたが、この他の統計手法を用いるようしてもよい。例えば、重回帰分析の手法を用いて換算式記憶部２６に重回帰式を記憶する場合には、膜厚換算部２４は、分光吸収比演算部２２から得られるいくつかの分光吸収比を説明変数とし、換算式記憶部２６に記憶されている重回帰式から、測定対象の層の膜厚や、膜厚に依存する各種の特性値を求める。
【００６１】
重回帰式とは、複数の変数を用いた一次式のことであり、一般的にｙ＝ａ１＋ｘ１＋ａ２ｘ２＋・・・＋ａｐｘｐ＋ａ０で表すことができる。ここで、ｘ１、ｘ２・・・ｘｐは説明変数と呼ばれるものであり、スペクトルから導出した分光吸収比とすることができる。また、ｙは目的変数と呼ばれるものであり、例えば、想定対象の層の膜厚や膜厚に依存する特性値とすることができる。ａ０は定数項、ａ１、ａ２、・・・ａｐは回帰係数と呼ばれ、予め目的変数に応じて設定しておく
例えば、目的変数が電荷発生層の膜厚である場合、説明変数である分光吸収比を得た電子写真感光体について、例えば、切断面の拡大写真を透過型電子顕微鏡により撮影し、目的変数である実際の電荷発生層の膜厚を求める。この測定結果を用い、膜厚を目的変数、任意の分光吸収比を説明変数とした多変量解析を行い、電荷発生層の膜厚との重相関係数の高くなる組み合わせの分光吸収比を選択して、重回帰式を求めることができる。これにより、電荷発生層の膜厚を目的変数とする重回帰式が求められる。求められた重回帰式は、換算式記憶部２６に記憶させておく。評価の際には、分光吸収比を説明変数として計算することにより、目的変数である電荷発生層の膜厚を求めることができる。他の電荷輸送層や下引層などの膜厚を目的変数とした重回帰式も同様にして求めることができる。
【００６２】
重回帰式を用いる理由としては、波長により電荷発生層の膜厚との相関や導電性基体の表面粗度による外乱の影響の大きさ等の特性が異なっているため、複数の波長を用いて、電荷発生層の膜厚への換算及び外乱の修正を重回帰式で同時に行えるためである。導電性基体の表面の粗さを表す指標、例えば、表面粗度が既知の場合、説明変数にこれを加えてもよい。また、重回帰式の目的変数は、電子写真感光体の各層の膜厚に依存する特性値、例えば、電荷発生層の膜厚に依存する電気特性等の特性値、具体的には光を照射した際の降下電位を示す光電度電位などを選択してもよい。
【００６３】
【実施例】
次に、上述の発明の実施の形態に対応する実施例を説明する。
【００６４】
電子写真感光体の電荷発生層の膜厚を求めるため、電荷発生層の膜厚をｄ_１μｍ〜ｄ_３μｍの３水準、よりなる電子写真感光体２８を作成した。更に、下地の反射による干渉の発生を促すための層として、顔料分散型の下引層を電荷発生層の下に形成した。図１に示した評価装置１０を使用し、上記の電子写真感光体２８の検出エリア２８ａに光源１２より光ファイバ１４及び測定プローブ１６経由で光を照射し、検出エリア２８ａの電荷発生層からの散乱光を測定プローブ１６及び光ファイバ１４経由で分光光度計１８の分光器に結像させ、スペクトルを得た。膜厚ｄ_１μｍ〜ｄ_３μｍに対応したスペクトルの波形を図５に示す。膜厚の変化に追従したスペクトルの変化が観察できる。なお、図５は、ピーク値を１００％に規格化した図を示す。
【００６５】
さらに、得られたスペクトルより膜厚算出部２０の分光吸収比演算部２２を用いて、分光吸収比を求めた。光源１２はハロゲン光源を用い、使用する波長幅は４００ｎｍ〜８００ｎｍの可視光領域とし、波長を１０ｎｍおきに分解して各波長の光量データを求め、分光吸収比を、各々ピーク波長の光量との比により算出した。さらに、上記の電子写真感光体２８における分光吸収スペクトル採取位置の切断面の拡大写真を透過型電子顕微鏡にて撮影して計測することにより、実際の電荷発生層の膜厚を求めた。各々求めた分光吸収比のうち、該電荷発生層の膜厚との相関の最も高い波長を選択し、相関を求めたところ、相関係数０．９８となり良好な結果が得られた。この相関から選られた一次回帰を、分光吸収比から実膜厚に換算するための換算式として、これを換算式記憶部２６に記憶させた。
【００６６】
以上により、下引層および電荷発生層を順次形成した電子写真感光体の電子写真感光体を分光光度計で測定することにより、光干渉によるの変動の影響を受けることがなく、電子写真感光体の電荷発生層の膜厚を正確に予測および評価することができた。また、電子写真感光体の１本のうちの複数の位置において膜厚の測定を行なうことにより、膜厚ムラ、ダレ等の不均一性の評価を行なうことも可能となった。
【００６７】
すなわち、本発明の実施の形態に係わる電子写真感光体の評価装置１０及びその評価方法では、電子写真感光体からの散乱光の分光特性から求めた分光吸収比に基づいて、被評価対象となる層の層厚または層厚に関する特徴量を得るので、正確に、しかも膜による光干渉などに影響されずに安定した測定結果を得ることができる。これによって、電子写真感光体の膜厚を製造工程途中の中間製品の状態で正確に評価することができる。
【００６８】
また、電子写真感光体の製造工程に本発明の実施の形態に係わる電子写真感光体の評価装置１０を適用して、測定結果を被測定対象の層を形成する工程にフィードバックすることによって、その工程の変動を早急に検知することができ、工程の安定化、膜厚不良品の後工程への大量流出を防止することができる。
【００６９】
次に比較例を説明する。前述の電子写真感光体２８を、図６に示すような、特開平９−１０６２１８に例示された装置を使用し、上記の電子写真感光体２８の検出エリア２８ａに光源６より光ファイバ４及び測定プローブ３経由で光を照射し、検出エリア２８ａの電荷発と層からの反射光を測定プローブ３及び光ファイバ４経由で分光光度計５の分光器に結像させ、スペクトルを得た。膜厚ｄ_１μｍ〜ｄ_３μｍに対応したスペクトルの波形を図７に示す。スペクトルの形状が膜厚の変化に追従しておらず、光干渉の影響も随所に見られる。
【００７０】
さらに、得られたスペクトルより膜厚算出部７の分光吸収比演算部８を用いて、分光吸収比を求めた。光源６は上記と同様にハロゲン光源を用い、使用する波長幅は４００ｎｍ〜８００ｎｍの可視光領域とし、波長を１０ｎｍおきに分解して各波長の光量データを求め、分光吸収比を、各々ピーク波長の光量との比により算出した。さらに、上記の電子写真感光体２８の分光吸収スペクトル採取位置の切断面の拡大写真を透過型電子顕微鏡にて撮影して計測することにより、実際の電荷発生層の膜厚を求めた。各々求めた分光吸収比のうち、該電荷発生層の膜厚との相関の最も高い波長を選択し、相関を求めたところ、相関係数０．７１となり、膜厚の評価方法としては使用できるレベルではないことがわかった。
【００７１】
【発明の効果】
以上説明したように本発明の電子写真感光体の評価装置及び評価方法によれば、電子写真感光体からの散乱光の分光特性から求めた分光吸収比に基づいて、被評価対象となる層の層厚または層厚に関する特徴量を得ているので、電子写真感光体の製造工程において、精度よく膜厚等の特性値を評価することができる、という効果がある。
【００７２】
また、本発明の電子写真感光体の製造装置及び製造方法によれば、上記電子写真感光体の評価装置及び評価方法を電子写真感光体の製造工程及び製造方法に適用するので、評価結果を製造工程に反映させることができる、という効果がある。
【図面の簡単な説明】
【図１】本発明の実施の形態に係わる電子写真感光体の評価装置の概略構成を示す図である。
【図２】投受光一体型の測定プローブを示す図である。
【図３】投受光分離型の測定プローブを示す図である。
【図４】分光特性の一例を示すグラフである。
【図５】本発明の実施の形態に係わる電子写真感光体の評価装置により得られる電子写真感光体の散乱光スペクトルの一例を示すグラフである。
【図６】比較例としての特開平９−１０６２１８号公報における電子写真感光体の評価装置の概略構成を示す図である。
【図７】比較例としての特開平９−１０６２１８号公報における電子写真感光体の評価装置により得られる電子写真感光体の反射スペクトルの一例を示すグラフである。
【符号の説明】
１０　　電子写真感光体の評価装置
１２　　光源
１４　　光ファイバ
１６　　測定プローブ
１８　　分光光度計
２０　　膜厚算出部
２２　　分光吸収比演算部
２４　　膜厚換算部
２６　　換算式記憶部
２８　　電子写真感光体
２８ａ　検出エリア[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an apparatus and a method for evaluating an electrophotographic photoreceptor, an apparatus and a method for manufacturing an electrophotographic photoreceptor, and in particular, an electrophotographic apparatus used for an electrophotographic apparatus such as a copying machine or a printer on a conductive substrate. The present invention relates to an electrophotographic photoreceptor evaluation apparatus and method for evaluating a film thickness of a photoreceptor and the like, and further relates to an electrophotographic photoreceptor manufacturing apparatus and method.
[0002]
[Prior art]
2. Description of the Related Art Heretofore, as an electrophotographic photosensitive member used in an electrophotographic apparatus such as a copying machine or a printer, an electrophotographic photosensitive member in which an undercoat layer, a charge generation layer, and a charge transport layer are sequentially laminated on a conductive substrate is known. . These photosensitive layers are prepared by dissolving or dispersing an organic photoconductive material for constituting each layer together with a binder resin in an organic solvent to form a photoconductor coating solution, and applying the photoconductor coating solution to the conductive substrate. An electrophotographic photoreceptor is manufactured by sequentially applying and drying the above.
[0003]
Many methods are known as a method of applying a photoconductor coating liquid in the process of manufacturing such an electrophotographic photoconductor. In particular, the dip coating method is a method in which a photosensitive layer is formed by immersing a conductive substrate in a coating layer filled with the above-described photoreceptor coating solution and then pulling the conductive substrate at a predetermined speed. This dip coating method is widely used in the production of electrophotographic photosensitive members because of its high productivity.
[0004]
However, this dip coating method has a drawback in that dripping tends to occur in the vertical direction. As a result, unevenness in coating, streaks may occur on the photosensitive layer formed on the substrate, or the vertical difference in film thickness may increase, which may cause image quality defects such as uneven density of images. In addition, an organic solvent that easily evaporates to form a coating film is often used for the coating solution. Therefore, the solvent evaporates from the coating liquid in the coating tank, and the viscosity and concentration of the coating liquid change, and it is difficult to apply the coating liquid under a certain condition in the manufacturing process.
[0005]
For this reason, in the above-described electrophotographic photoreceptor manufacturing process, the thickness of each layer is measured and evaluated, and by controlling the thickness, a variation in the coating process is detected and the coating amount is adjusted. . For the measurement of the film thickness of each such layer, for example, a non-contact method using a contact type film thickness measuring method such as a step gauge, an overcurrent type film thickness meter, a color difference method, an interference method, a light absorption method, or the like. A formula thickness measurement method has been devised.
[0006]
In particular, the evaluation of the film thickness using the interferometry utilizes the interference effect due to multiple reflection of light, and can be evaluated relatively easily and in a short time. It is often used when measuring the thickness of a transparent film such as a charge transport layer. For example, Japanese Patent Application Laid-Open No. 4-336540 discloses a method in which the film thickness of an undercoat layer and a charge transport layer of an electrophotographic photoreceptor are evaluated by such a method to control the coating speed in each coating step. ing.
[0007]
The film thickness evaluation using the light absorption method is based on the fact that the absorption of light by the film varies depending on the film thickness, and the evaluation can be performed relatively easily and in a short time. It is often used to measure the thickness of a photoconductor. As the type of light used at that time, for example, when measuring the thickness of a transparent film such as an undercoat layer or a charge transport layer of an electrophotographic photoreceptor, absorption of light in an infrared wavelength region is considered. The method used is often used. When measuring the thickness of a film in which a pigment is dispersed, such as a charge generation layer of an electrophotographic photosensitive member, a method utilizing absorption of light in a visible region is often used.
[0008]
Practical values of the characteristic values obtained by the light absorption method include an absorptance, a reflectivity, and the like. It represents the ratio between the amount of light incident on the device and the amount of reflected light. These characteristic values often have a correlation with the film thickness of the film to be measured. In such a case, it is possible to convert the film thickness from these characteristic values using a conversion formula obtained in advance. is there. For example, in JP-A-6-130683, a portion where an undercoat layer is not formed is provided on the surface of the substrate outside the image forming region of the electrophotographic photoreceptor, and a film of a charge generation layer is formed on the portion, and the spectral A method is disclosed in which a specific single wavelength, that is, an absorptance is obtained from a spectral absorption spectrum at the position obtained by a photometer, and the film thickness is converted. Also, Japanese Patent Application Laid-Open No. 9-106218 discloses a method of obtaining a light amount ratio of a plurality of wavelengths, that is, a spectral absorption ratio, from a spectral absorption spectrum at the position obtained by a spectrophotometer and converting the film thickness into a film thickness.
[0009]
[Problems to be solved by the invention]
However, in general, when using a spectrophotometer or the like to obtain the absorption rate or the spectral absorption ratio from the ratio of the amount of incident light to the coating film and the amount of reflected light, the film to be measured itself or another film may be used. In a system where optical interference occurs, measurement may not be possible. In other words, in such a system, the amount of reflected light fluctuates due to the influence of light interference and confounding with absorption, so that the amount of reflected light that is not related to the absorption of the target film to be measured This causes a problem that the variation of the measured value is increased and the measurement accuracy is reduced.
[0010]
In addition, when the reflectance or the absorptance such as the film thickness of each layer of the electrophotographic photosensitive member is evaluated as a substitute characteristic, there is a problem that the variation in the characteristic value increases at the same time. Furthermore, when the coating process is managed based on these characteristic values, there is a problem that an evaluation that deviates significantly from the true value may be fed back to the process.
[0011]
The present invention has been made in view of the above facts, and in an electrophotographic photoreceptor manufacturing process, while providing an electrophotographic photoreceptor evaluation apparatus and an evaluation method for accurately evaluating characteristic values such as film thickness, An object of the present invention is to provide a manufacturing apparatus and a manufacturing method of an electrophotographic photosensitive member in which the evaluation result is reflected in a manufacturing process.
[0012]
[Means for Solving the Problems]
According to an aspect of the present invention, there is provided an electrophotographic photoreceptor evaluation apparatus for evaluating an electrophotographic photoreceptor having a layer formed on a conductive substrate, wherein the electrophotographic photoreceptor is provided. A scattered light receiving means for receiving light emitted by the light emitting means in the electrophotographic photosensitive member in a direction different from a regular reflection direction; and a scattered light received by the scattered light receiving means. A spectral characteristic detecting means for detecting the spectral characteristic of, and a calculating means for obtaining a layer thickness of the layer or a feature amount relating to the layer thickness based on a spectral absorption ratio obtained from the spectral characteristic detected by the spectral characteristic detecting means. , Is provided.
[0013]
According to the first aspect of the invention, the light emitted from the light projecting means to the surface of the electrophotographic photosensitive member is received by the scattered light receiving means in a direction different from the regular reflection direction. That is, the scattered light receiving means receives scattered light scattered by the electrophotographic photosensitive member.
[0014]
The spectral characteristic detecting means detects the spectral characteristic of the received scattered light. In other words, since the spectral characteristic of scattered light, not reflected light, is detected, the reflected light and the optical path are different, so that there is no light interference due to the reflected light of the layer to be evaluated and other layers, and the scattering of the layer to be evaluated The spectral characteristics of light can be accurately detected.
[0015]
Then, the calculating means obtains the layer thickness or a feature quantity relating to the layer thickness based on the spectral absorption ratio obtained from the spectral characteristics. For example, it is possible to obtain the layer thickness and the characteristic amount relating to the layer thickness from the relationship between the spectral absorption ratio obtained in advance and the layer thickness and the characteristic amount relating to the layer thickness.
[0016]
That is, since the layer thickness and the characteristic amount relating to the layer thickness can be obtained by using the spectral characteristics of the scattered light of the layer of the object to be measured which are accurately detected, in the manufacturing process of the electrophotographic photosensitive member, the film thickness and the like can be accurately determined. Characteristic values can be evaluated.
[0017]
According to a second aspect of the present invention, in the first aspect of the present invention, the scattered light receiving unit is shifted with respect to a regular reflection optical path where light emitted from the light projecting unit is reflected by the layer. It is characterized by being arranged at a position.
[0018]
According to the second aspect of the present invention, in the first aspect of the present invention, the scattered light receiving means is provided with respect to a regular reflection optical path in which light emitted from the light projecting means is reflected by a layer of the electrophotographic photosensitive member. By arranging them at shifted positions, light can be received in a direction different from the regular reflection direction, and only scattered light can be received without receiving reflected light.
[0019]
At this time, by disposing the scattered light receiving means at a position shifted from the regular reflection optical path by an angle larger than の of the light receiving angle by the scattered light receiving means, as in the invention according to claim 3. Thus, it is possible to reliably receive only the scattered light.
[0020]
Further, the light projecting means and the scattered light receiving means can be measurement probes each including an optical fiber as in the invention according to claim 4. The measurement probe may be a measurement probe integrated with light emission and light reception.
[0021]
In a case where the measuring probe is a light emitting and receiving integrated type, the scattered light is provided by arranging the optical axis of the measuring probe so as to be inclined with respect to the normal line of the electrophotographic photosensitive member. Can be received. Further, at this time, the inclination angle of the electrophotographic photosensitive member with respect to the normal line is set to an angle larger than 1/2 of the light receiving angle of the light receiving means and smaller than 90 °. By tilting, only scattered light can be reliably received.
[0022]
The inclination angle of the electrophotographic photosensitive member with respect to the normal is preferably 15 ° to 45 °.
[0023]
Further, as the layer to be evaluated, the charge generation layer can be evaluated as in the invention described in claim 8. In this case, it is possible to obtain characteristic values such as electric characteristics depending on the thickness of the charge generation layer, specifically, a photosensitivity potential indicating a drop potential when irradiated with light, as the feature amount relating to the layer thickness. is there.
[0024]
The invention according to claim 9 is an electrophotographic photosensitive member evaluation method for evaluating an electrophotographic photosensitive member in which a layer is formed on a conductive substrate, and irradiating the electrophotographic photosensitive member with light, Detecting the spectral characteristics of scattered light received in a direction different from the specular reflection direction with respect to the irradiation light, and obtaining a layer thickness or a feature amount related to the layer thickness of the layer using a spectral absorption ratio obtained from the detected spectral characteristics. Features.
[0025]
According to the ninth aspect of the present invention, the electrophotographic photosensitive member on which the layer is formed is irradiated with light, and the spectral characteristics of scattered light received in a direction different from the regular reflection direction of the irradiated light are detected. In other words, since the spectral characteristic of scattered light is detected instead of reflected light, the reflected light and the optical path are different, so that the light reflected by the layer to be evaluated and other layers do not interfere with the light of the layer to be evaluated. The spectral characteristics of light can be accurately detected.
[0026]
Then, a layer thickness or a feature amount relating to the layer thickness of the evaluation target is obtained using the spectral absorption ratio obtained from the spectral characteristics of the detected scattered light. For example, it is possible to obtain the layer thickness and the characteristic amount relating to the layer thickness from the relationship between the spectral absorption ratio obtained in advance and the layer thickness and the characteristic amount relating to the layer thickness.
[0027]
That is, since the layer thickness and the characteristic amount relating to the layer thickness can be obtained by using the spectral characteristics of the scattered light of the layer of the object to be measured which are accurately detected, in the manufacturing process of the electrophotographic photosensitive member, the film thickness and the like can be accurately determined. Characteristic values can be evaluated.
[0028]
According to a tenth aspect of the present invention, in the ninth aspect of the present invention, the detection of the spectral characteristics of the scattered light includes receiving light at a position deviated from a regular reflection optical path of light applied to the electrophotographic photosensitive member. And detecting the spectral characteristics of the received light.
[0029]
According to a tenth aspect of the present invention, in the ninth aspect of the present invention, the detection of the spectral characteristic of the scattered light is performed by receiving light at a position shifted from a regular reflection optical path of light applied to the electrophotographic photosensitive member. Then, by detecting the spectral characteristics of the received light, it is possible to receive only the scattered light without receiving the reflected light.
[0030]
At this time, as in the invention according to claim 11, light at a position shifted from the regular reflection optical path by an angle larger than 1/2 of the light receiving angle by the scattered light receiving means for receiving light is received, By detecting the spectral characteristics, it is possible to reliably receive only the scattered light.
[0031]
Further, the spectral characteristics of the scattered light can be detected using a measuring probe including an optical fiber as in the invention according to claim 12, and the measuring probe includes the invention according to claim 13. As described above, a measurement probe integrated with light emission / reception may be used.
[0032]
In the case of using an integrated light emitting and receiving measuring probe, the scattered light is detected by detecting the optical axis of the measuring probe by tilting the optical axis with respect to the normal line of the electrophotographic photosensitive member. Can be detected. Further, at this time, as in the invention according to claim 15, detection is performed by inclining at an angle larger than 1/2 of the light receiving angle by the scattered light receiving means for receiving light and smaller than 90 °. Thereby, the spectral characteristic of only the scattered light can be reliably detected.
[0033]
The inclination angle of the electrophotographic photosensitive member with respect to the normal is preferably 15 ° to 45 °.
[0034]
As a layer to be evaluated, a charge generation layer can be an object to be evaluated as in the invention according to claim 16. In this case, it is possible to obtain characteristic values such as electric characteristics depending on the thickness of the charge generation layer, specifically, a photosensitivity potential indicating a drop potential when irradiated with light, as the feature amount relating to the layer thickness. is there.
[0035]
By applying the electrophotographic photoreceptor evaluation apparatus according to any one of claims 1 to 8 to an electrophotographic photoreceptor manufacturing apparatus as in the invention according to claim 17, The electrophotographic photoreceptor evaluation device can obtain stable measurement results accurately and without being affected by light interference due to the film. Can be accurately evaluated.
[0036]
Similarly, the method for evaluating an electrophotographic photosensitive member according to any one of claims 9 to 16 is applied to a method for manufacturing an electrophotographic photosensitive member as in the invention according to claim 18. In this way, the above-described method for evaluating an electrophotographic photoreceptor can obtain a stable measurement result accurately and without being affected by light interference or the like caused by the film. Can be accurately evaluated in the state of the intermediate product.
[0037]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, an example of an embodiment of the present invention will be described in detail with reference to the drawings.
[0038]
FIG. 1 shows a schematic configuration of an apparatus for evaluating an electrophotographic photosensitive member according to an embodiment of the present invention.
[0039]
As shown in FIG. 1, an electrophotographic photoreceptor evaluation device 10 includes a light source 12, an optical fiber 14, a measurement probe 16, a spectrophotometer 18, and a film thickness calculator 20, and the light source 12 and the spectrophotometer Reference numeral 18 is connected to the measurement probe 16 via the optical fiber 14, and the spectrophotometer 18 is connected to the film thickness calculating unit 20.
[0040]
The film thickness calculation unit 20 includes a spectral absorption ratio calculation unit 22, a film thickness conversion unit 24, and a conversion formula storage unit 26.
[0041]
In the electrophotographic photoreceptor 28 to be measured, layers such as an undercoat layer, a charge generation layer, and a charge transport layer are sequentially laminated on a conductive substrate. The electrophotographic photoreceptor 28 is an electrophotographic photoreceptor in a state after at least a layer to be evaluated has been laminated on a conductive substrate. In this case, the electrophotographic photoreceptor 28 is formed on the surface of the conductive substrate in advance. It is assumed that an undercoat layer, a charge generation layer, and a charge transport layer are sequentially formed.
[0042]
The light source 12 uses a commonly used light source, such as halogen or nichrome, according to the absorption wavelength range of the layer to be measured. For example, in the case where the pigment is dispersed as in the charge generation layer and the absorption of light by the film appears remarkably in the visible light region, a halogen light source often used as a visible light source may be used. Good. In the case of a transparent layer such as a charge transport layer or an undercoat layer, a nichrome light source often used as an infrared light source may be used. Of course, other light sources can be used, and may be used according to the absorption wavelength range of the layer to be measured.
[0043]
The light emitted from the light source 12 is emitted from the measurement probe 16 to the detection area 28a of the electrophotographic photosensitive member 28 via the optical fiber 14.
[0044]
Here, the measurement probe 16 of the present embodiment arranges the measurement probe 16 at a position shifted from the regular reflection optical path in order to avoid receiving the regular reflection light and receive only the scattered light. In the present embodiment, as shown in FIG. 1 and FIG. 2, the measurement probe 16 of the integrated light emitting and receiving type is arranged to be inclined with respect to the normal line of the electrophotographic photosensitive member. At this time, the inclination angle θ of the measurement probe 16 is set to an angle larger than よ り 大 き い of the light reception angle of the measurement probe 16 and smaller than 90 ° with respect to the normal line of the electrophotographic photosensitive member 28, thereby providing scattering. Light can be received.
[0045]
Since the light receiving angle of the measurement probe 16 is generally 20 °, the inclination angle θ of the measurement probe 16 is larger than 10 ° with respect to the normal direction of the electrophotographic photoreceptor 28 and is larger than 90 °. Preferably, the angle is small. Further, the inclination angle θ is more preferably 15 ° to 45 °.
[0046]
In addition, even when a measurement probe of a separate light emitting and receiving type is used, an equivalent function can be obtained by disposing the light receiving side probe away from the regular reflection optical path as shown in FIG. In this case, it is preferable to dispose the light receiving side of the measurement probe 16 at a position deviated by an angle larger than 受 光 of the light reception angle of the measurement probe 16 with respect to the regular reflection optical path.
[0047]
In this manner, the light radiated to the detection area 28a sequentially passes through each layer formed on the conductive substrate of the electrophotographic photoreceptor 28 and reflects, and a system that scatters in the layer to be measured. And break up. The light reflected on the surface of the conductive substrate passes through each layer again, but does not reach the measurement probe 16. On the other hand, the scattered light reaches the measurement probe 16. The light incident on the measurement probe 16 forms an image on the spectrometer of the spectrophotometer 18 via the optical fiber 14.
[0048]
The spectrophotometer 18 collects the spectrum of the scattered light in the detection area 28a, and the film thickness calculation unit 20 calculates the characteristic depending on the film thickness and the film thickness of the layer to be measured from the spectrum obtained by the spectrophotometer 18. Calculate the value.
[0049]
As described above, the film thickness calculation unit 20 includes the spectral absorption ratio calculation unit 22, the film thickness conversion unit 24, and the conversion formula storage unit 26, and calculates the measurement target from the spectrum obtained by the spectrophotometer 18. The thickness of the layer and the characteristic value depending on the thickness are calculated. The film thickness calculation unit 20 can be configured by, for example, a data processing device such as a personal computer.
[0050]
The spectral absorption ratio calculation unit 22 calculates the ratio of the light quantity of an arbitrary wavelength to the light quantity of the peak wavelength with the largest light quantity or the light quantity of the bottom wavelength with the smallest light quantity from the spectrum obtained by the spectrophotometer 18. This is called a spectral absorption ratio. FIG. 4 is an explanatory diagram of an example of spectral characteristics and a spectral absorption ratio. FIG. 4 shows an example of the spectrum of light scattered by the measurement target layer. Such a spectrum is obtained by the spectrophotometer 18. It is known that when such a spectrum is collected, light is absorbed by the film, and the amount of reflected light, that is, the degree of absorption varies depending on the wavelength. Utilizing this characteristic, the wavelength with the least absorption is set as the peak wavelength, the wavelength with the largest absorption is set as the bottom wavelength, and the ratio between the light amount at an arbitrary wavelength and the light amount at the peak wavelength or the bottom wavelength is calculated by the spectral absorption ratio calculation unit 22. calculate. Here, the peak wavelength is the wavelength that is least affected by the film thickness, and the bottom wavelength is the wavelength that is most affected by the film thickness. The reason for taking the ratio of wavelengths is to minimize a variation factor due to a change in the state of the optical system, for example, a change in the light source light amount or a change in the optical path length. Here, the spectral absorption ratio is calculated from the light amount at the peak wavelength with the least absorption and the light amount at an arbitrary wavelength with relatively high absorption. For example, the spectral absorption ratio between the wavelength A and the peak wavelength in FIG. _A , The light amount at the peak wavelength is L _P Then L _A / L _P It becomes. For example, in the example shown in FIG. 4, the spectral absorption ratio calculation unit 8 calculates the spectral absorption ratio of the peak wavelength and the wavelengths A, B, C, and the bottom wavelength.
[0051]
As an example, the spectral absorption ratio will be obtained from the following general formula representing the amount of absorbed light.
Lo = Li × exp (−μd) × Lb
Here, Lo is the amount of reflected light, Li is the amount of incident light, μ is the absorption coefficient, d is the film thickness, and Lb is the reflectance of the substrate surface. Using this equation, the ratio of the reflected light amounts of the two wavelengths of light having different absorption coefficients is considered. Let the two wavelengths be wavelength X and wavelength Y, Lo _X Is the amount of reflected light at wavelength X, Lo _Y Is the amount of reflected light at wavelength Y, Li is the amount of incident light, μ _X Is the absorption coefficient of wavelength X, μ _Y Is the absorption coefficient of the wavelength Y, d is the film thickness, and Lb is the reflectance of the substrate surface.

It becomes. This relational expression does not include the incident light amount Li and the reflectance Lb of the substrate surface. Therefore, the light absorption amount can be represented by the spectral absorption ratio without being affected by the fluctuation of the incident light amount due to the fluctuation of the light source light amount or the fluctuation of the optical path length and the fluctuation of the reflectance of the substrate surface.
[0052]
The film thickness conversion unit 24 uses some of the spectral absorption ratios obtained from the spectral absorption ratio calculation unit 22 as explanatory variables, and calculates the film thickness of the layer to be measured by a conversion formula obtained in advance and stored in a conversion formula storage unit 26. Also, various characteristic values depending on the film thickness are obtained. For example, when the target variable is the thickness of the charge generation layer, for the same electrophotographic photosensitive member 28 that has obtained the spectral absorption ratio as an explanatory variable, for example, an enlarged photograph of a cut surface is taken by a transmission electron microscope, The actual thickness of the charge generation layer, which is a variable, is determined. Using this measurement result, a simple regression equation using the film thickness as an objective variable and an arbitrary spectral absorption ratio as an explanatory variable is obtained as a conversion equation, and stored in the conversion equation storage unit 26. At the time of evaluation, the thickness of the charge generation layer, which is the target variable, can be obtained by calculating the spectral absorption ratio as an explanatory variable. In addition, as the objective variable of the conversion formula, a characteristic value depending on the thickness of each layer of the electrophotographic photosensitive member, for example, may be selected.
[0053]
Next, an example of the operation of the electrophotographic photoreceptor evaluation apparatus 10 configured as described above will be described.
[0054]
Light from the light source 12 is applied to the surface of the detection area 28 a on the electrophotographic photosensitive member 28 via the optical fiber 14 and the measurement probe 16. The light applied to the detection area 28a is divided into a system that sequentially passes and reflects each layer formed on the conductive substrate of the electrophotographic photosensitive member 28 and a system that scatters in the layer to be measured. The light reflected on the surface of the conductive substrate again passes through each layer again, but does not reach the measurement probe 16 because the measurement probe 16 is provided at a position shifted from the regular reflection optical path. On the other hand, the scattered light reaches the measurement probe 16 because it is provided at a position where the measurement probe 16 receives the scattered light (a position shifted from the regular reflection optical path). In other words, only the scattered light reaches the measurement probe 16 and there is no light interference on the film itself to be measured or other films. Therefore, measurement variations can be prevented. .
[0055]
The light incident on the measurement probe 16 forms an image on the spectrometer 18 of the spectrophotometer 18 via the optical fiber 14. Thereby, for example, the spectrum of the reflected light as shown in FIG. 4 can be collected by the spectrophotometer 18.
[0056]
The obtained spectrum is sent to the spectral absorption ratio calculating section 22 of the film thickness calculating section 20, where the spectral absorption ratio is calculated, and the calculation result is input to the film thickness converting section 24. The film thickness conversion unit 24 substitutes the spectral absorption ratio calculated by the spectral absorption ratio calculation unit 22 into a conversion formula stored in the conversion formula storage unit 26 in advance, thereby obtaining a film thickness or a specific value dependent on the film thickness. Can be obtained with high accuracy.
[0057]
The above-described operation is not limited to the measurement at one place of the electrophotographic photosensitive member 28. For example, the electrophotographic photosensitive member 28 is rotated, and the electrophotographic photosensitive member 28 and the measurement probe 16 are relatively moved up and down in FIG. Thus, the measurement can be performed for a plurality of detection areas or the entire surface of the electrophotographic photosensitive member 28.
[0058]
The film thickness or the specific value depending on the film thickness obtained as described above can be output as it is to a display, a printer, or the like, or can be output as a good / defective signal, for example, by comparing with a certain threshold value.
[0059]
Further, these outputs can be fed back to the step of forming the layer to be measured and used for controlling the step. This makes it possible to obtain an electrophotographic photoreceptor manufacturing apparatus and a manufacturing method capable of controlling the film thickness, stabilizing the process, and preventing a large film with a defective film thickness from flowing out to a subsequent process.
[0060]
In the present embodiment, a simple regression equation is stored as the conversion equation stored in the conversion equation storage unit 26, and a simple regression analysis technique is used. However, other statistical techniques may be used. For example, when a multiple regression equation is stored in the conversion equation storage unit 26 using the method of multiple regression analysis, the film thickness conversion unit 24 describes several spectral absorption ratios obtained from the spectral absorption ratio calculation unit 22. From the multiple regression equation stored in the conversion equation storage unit 26 as a variable, the thickness of the layer to be measured and various characteristic values depending on the thickness are obtained.
[0061]
The multiple regression equation is a linear equation using a plurality of variables, and can be generally represented by y = a1 + x1 + a2x2 +... + Apxp + a0. Here, x1, x2... Xp are called explanatory variables, and can be spectral absorption ratios derived from spectra. In addition, y is called an objective variable, and can be, for example, a film thickness of a layer to be assumed or a characteristic value depending on the film thickness. a0 is a constant term, a1, a2,..., ap are called regression coefficients, and are set in advance according to the objective variable.
For example, when the objective variable is the thickness of the charge generation layer, for an electrophotographic photosensitive member having a spectral absorption ratio that is an explanatory variable, for example, an enlarged photograph of a cut surface is taken with a transmission electron microscope, and the objective variable is used as the objective variable. The actual thickness of the charge generation layer is determined. Using this measurement result, a multivariate analysis is performed using the film thickness as the target variable and an arbitrary spectral absorption ratio as an explanatory variable, and the spectral absorption ratio of the combination that increases the multiple correlation coefficient with the film thickness of the charge generation layer is selected. Then, a multiple regression equation can be obtained. Thus, a multiple regression equation using the thickness of the charge generation layer as an objective variable is obtained. The obtained multiple regression equation is stored in the conversion equation storage unit 26. At the time of evaluation, the thickness of the charge generation layer, which is the target variable, can be obtained by calculating the spectral absorption ratio as an explanatory variable. A multiple regression equation using the thickness of another charge transport layer, undercoat layer, or the like as an objective variable can be similarly obtained.
[0062]
The reason for using the multiple regression equation is that characteristics such as the correlation with the film thickness of the charge generation layer and the magnitude of the influence of disturbance due to the surface roughness of the conductive substrate differ depending on the wavelength. This is because the conversion into the film thickness of the charge generation layer and the correction of disturbance can be simultaneously performed by the multiple regression equation. If the index representing the surface roughness of the conductive substrate, for example, the surface roughness is known, this may be added to the explanatory variable. The objective variable of the multiple regression equation is a characteristic value that depends on the thickness of each layer of the electrophotographic photosensitive member, for example, a characteristic value such as an electrical characteristic that depends on the thickness of the charge generation layer, specifically, light irradiation. Alternatively, a photoelectric potential or the like indicating a drop potential at the time may be selected.
[0063]
【Example】
Next, an example corresponding to the above-described embodiment of the present invention will be described.
[0064]
To determine the thickness of the charge generation layer of the electrophotographic photoreceptor, ₁ μm to d ₃ An electrophotographic photosensitive member 28 having three levels of μm was prepared. Further, a pigment-dispersed undercoat layer was formed below the charge generation layer as a layer for promoting the occurrence of interference due to the reflection of the base. Using the evaluation device 10 shown in FIG. 1, the detection area 28a of the electrophotographic photosensitive member 28 is irradiated with light from the light source 12 via the optical fiber 14 and the measurement probe 16, and the light is emitted from the charge generation layer in the detection area 28a. The scattered light was imaged on the spectrophotometer 18 via the measuring probe 16 and the optical fiber 14 to obtain a spectrum. Film thickness d ₁ μm to d ₃ FIG. 5 shows a waveform of a spectrum corresponding to μm. A change in the spectrum following the change in the film thickness can be observed. FIG. 5 shows a diagram in which the peak value is normalized to 100%.
[0065]
Further, the spectral absorption ratio was obtained from the obtained spectrum using the spectral absorption ratio calculation unit 22 of the film thickness calculation unit 20. The light source 12 uses a halogen light source, the wavelength width to be used is a visible light region of 400 nm to 800 nm, the wavelength is decomposed every 10 nm, light amount data of each wavelength is obtained, and the spectral absorption ratio is calculated with the light amount of each peak wavelength. The ratio was calculated. Further, the actual thickness of the charge generation layer was determined by taking an enlarged photograph of the cut surface of the electrophotographic photosensitive member 28 at the position where the spectral absorption spectrum was collected with a transmission electron microscope and measuring the photograph. The wavelength having the highest correlation with the thickness of the charge generation layer was selected from the obtained spectral absorption ratios, and the correlation was obtained. The correlation coefficient was 0.98, and a good result was obtained. The primary regression selected from this correlation was stored in the conversion formula storage unit 26 as a conversion formula for converting the spectral absorption ratio into the actual film thickness.
[0066]
As described above, by measuring the electrophotographic photosensitive member of the electrophotographic photosensitive member in which the undercoat layer and the charge generation layer are sequentially formed with a spectrophotometer, the electrophotographic photosensitive member is not affected by the fluctuation due to the light interference. Was able to accurately predict and evaluate the thickness of the charge generation layer. Further, by measuring the film thickness at a plurality of positions of one of the electrophotographic photoreceptors, it is possible to evaluate non-uniformity such as film thickness unevenness and sagging.
[0067]
That is, in the electrophotographic photosensitive member evaluation apparatus 10 and the evaluation method according to the embodiment of the present invention, the evaluation target is based on the spectral absorption ratio obtained from the spectral characteristics of the scattered light from the electrophotographic photosensitive member. Since the layer thickness of the layer or a feature amount relating to the layer thickness is obtained, a stable measurement result can be obtained accurately and without being affected by light interference or the like by the film. This makes it possible to accurately evaluate the film thickness of the electrophotographic photosensitive member in the state of an intermediate product in the course of the manufacturing process.
[0068]
In addition, by applying the electrophotographic photoreceptor evaluation apparatus 10 according to the embodiment of the present invention to the electrophotographic photoreceptor manufacturing process and feeding back the measurement results to the step of forming the layer to be measured, Variations in the process can be detected promptly, stabilizing the process, and preventing a large-diameter product having a poor film thickness from flowing out to a subsequent process.
[0069]
Next, a comparative example will be described. As shown in FIG. 6, the electrophotographic photoreceptor 28 described above is used in an apparatus exemplified in JP-A-9-106218. Light was radiated through the probe 3 and the emission of charges in the detection area 28a and the reflected light from the layer were imaged on the spectrometer of the spectrophotometer 5 via the measurement probe 3 and the optical fiber 4 to obtain a spectrum. Film thickness d ₁ μm to d ₃ FIG. 7 shows a waveform of a spectrum corresponding to μm. The shape of the spectrum does not follow the change in the film thickness, and the influence of light interference can be seen everywhere.
[0070]
Further, the spectral absorption ratio was obtained from the obtained spectrum using the spectral absorption ratio calculation unit 8 of the film thickness calculation unit 7. The light source 6 uses a halogen light source in the same manner as described above, the wavelength width to be used is a visible light region of 400 nm to 800 nm, and the wavelength is decomposed every 10 nm to obtain light amount data of each wavelength. Calculated from the ratio to the light amount of Further, the actual thickness of the charge generation layer was determined by taking a photograph of an enlarged photograph of the cut surface of the electrophotographic photosensitive member 28 at the position where the spectral absorption spectrum was collected with a transmission electron microscope and measuring the photograph. When the wavelength having the highest correlation with the film thickness of the charge generation layer was selected from the obtained spectral absorption ratios, and the correlation was calculated, the correlation coefficient was 0.71, which can be used as a method for evaluating the film thickness. Turned out not a level.
[0071]
【The invention's effect】
As described above, according to the apparatus and method for evaluating an electrophotographic photosensitive member of the present invention, based on the spectral absorption ratio obtained from the spectral characteristics of scattered light from the electrophotographic photosensitive member, Since the layer thickness or the characteristic amount related to the layer thickness is obtained, there is an effect that characteristic values such as the film thickness can be accurately evaluated in the manufacturing process of the electrophotographic photosensitive member.
[0072]
According to the apparatus and method for manufacturing an electrophotographic photosensitive member of the present invention, since the above-described apparatus and method for evaluating an electrophotographic photosensitive member are applied to a manufacturing process and a method for manufacturing an electrophotographic photosensitive member, the evaluation result is manufactured. There is an effect that it can be reflected in the process.
[Brief description of the drawings]
FIG. 1 is a diagram showing a schematic configuration of an evaluation apparatus for an electrophotographic photosensitive member according to an embodiment of the present invention.
FIG. 2 is a diagram showing an integrated light emitting and receiving measuring probe.
FIG. 3 is a diagram showing a measurement probe of a separated light emission / reception type.
FIG. 4 is a graph showing an example of spectral characteristics.
FIG. 5 is a graph showing an example of a scattered light spectrum of the electrophotographic photosensitive member obtained by the electrophotographic photosensitive member evaluation apparatus according to the embodiment of the present invention.
FIG. 6 is a diagram illustrating a schematic configuration of an evaluation apparatus for an electrophotographic photosensitive member disclosed in JP-A-9-106218 as a comparative example.
FIG. 7 is a graph showing an example of a reflection spectrum of an electrophotographic photosensitive member obtained by an electrophotographic photosensitive member evaluation apparatus in JP-A-9-106218 as a comparative example.
[Explanation of symbols]
10 Evaluation device for electrophotographic photoreceptor
12 light source
14 Optical fiber
16 measuring probe
18 Spectrophotometer
20 Film thickness calculator
22 Spectral absorption ratio calculation unit
24 Film thickness conversion unit
26 Conversion formula storage
28 Electrophotographic photoreceptor
28a Detection area

Claims (18)

An electrophotographic photosensitive member evaluation apparatus for evaluating an electrophotographic photosensitive member having a layer formed on a conductive substrate,
Light projection means for irradiating the electrophotographic photosensitive member with light,
For the irradiation light by the light projecting means in the electrophotographic photoreceptor, scattered light receiving means for receiving light in a direction different from the regular reflection direction,
Spectral characteristic detecting means for detecting spectral characteristics of the scattered light received by the scattered light receiving means,
Calculating means for obtaining a layer thickness of the layer or a feature quantity relating to the layer thickness, based on a spectral absorption ratio determined from the spectral characteristics detected by the spectral characteristic detecting means;
An electrophotographic photoreceptor evaluation device comprising: 2. The electrophotographic photosensitive apparatus according to claim 1, wherein the scattered light receiving unit is disposed at a position shifted from a regular reflection optical path where light emitted from the light projecting unit is reflected by the layer. Body evaluation device. 3. The electron according to claim 2, wherein the scattered light receiving unit is arranged at a position shifted from the regular reflection optical path by an angle larger than 1/2 of a light receiving angle of the scattered light receiving unit. Evaluation device for photoreceptors. 4. The apparatus according to claim 1, wherein each of the light projecting unit and the scattered light receiving unit includes a measurement probe including an optical fiber. 5. The apparatus according to claim 4, wherein the light projecting means and the scattered light receiving means comprise a measuring probe integrated with light projecting and receiving. 6. The measurement probe according to claim 5, wherein the measurement probe is arranged so that an optical axis of the measurement probe is inclined with respect to a normal line of the electrophotographic photosensitive member. The measurement probe is arranged so as to be inclined such that an inclination angle with respect to the normal line is an angle larger than １ ／ of a light reception angle of the scattered light receiving means and smaller than 90 °. The evaluation device for an electrophotographic photosensitive member according to claim 6. The apparatus according to any one of claims 1 to 7, wherein the layer is a charge generation layer. An electrophotographic photosensitive member evaluation method for evaluating an electrophotographic photosensitive member having a layer formed on a conductive substrate,
Irradiating the electrophotographic photoreceptor with light, detecting the spectral characteristics of the scattered light received in a direction different from the regular reflection direction for the irradiated light, and using the spectral absorption ratio determined from the detected spectral characteristics, A method for evaluating an electrophotographic photosensitive member, comprising obtaining a layer thickness or a feature amount relating to the layer thickness. The detection of the spectral characteristic of the scattered light includes receiving light at a position deviated from a regular reflection optical path of light applied to the electrophotographic photosensitive member, and detecting a spectral characteristic of the received light. 9. The method for evaluating an electrophotographic photosensitive member according to item 9. The position deviated from the regular reflection path is a position deviated from the regular reflection path by an angle larger than 1/2 of a light receiving angle by a scattered light receiving unit that receives light. 3. The method for evaluating an electrophotographic photoreceptor described in 1. above. The method according to any one of claims 9 to 11, wherein the spectral characteristics of the scattered light are detected by using a measurement probe including an optical fiber. 13. The method according to claim 12, wherein the spectral characteristics of the scattered light are detected by using a light emitting / receiving integrated measurement probe. 14. The method according to claim 13, wherein the spectral characteristic of the scattered light is detected by tilting an optical axis of the measurement probe with respect to a normal direction of the electrophotographic photosensitive member. The tilt angle to be tilted with respect to the normal direction is an angle larger than よ り 大 き い of a light receiving angle by a scattered light receiving unit that receives light and smaller than 90 °. Evaluation method of electrophotographic photoreceptor. The method according to any one of claims 9 to 15, wherein the layer is a charge generation layer. An electrophotographic photosensitive member manufacturing apparatus for manufacturing an electrophotographic photosensitive member by forming a layer on a conductive substrate,
An electrophotographic photosensitive member evaluation device according to any one of claims 1 to 8, wherein the evaluation result of the electrophotographic photosensitive member evaluation device is fed back to a layer forming step to be evaluated. An apparatus for manufacturing an electrophotographic photoreceptor, comprising: A method for producing an electrophotographic photosensitive member, wherein a layer is formed on a conductive substrate to produce an electrophotographic photosensitive member,
17. An electrophotographic photosensitive member, wherein the evaluation is performed by the method for evaluating an electrophotographic photosensitive member according to any one of claims 9 to 16, and the evaluation result is fed back to a process of forming a layer to be evaluated. How to make the body.

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