JP2004039768A - Exhaust apparatus and aligner - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an aligner having merits that gas used in a vacuum chamber can be exhausted in a short period of time, and the deterioration of the degree of vacuum can be restrained in the vacuum chamber, or the like, and to provide an aligner having the exhaust apparatus. <P>SOLUTION: An electrostatic chuck 37 in a wafer chamber 30 is provided with a cooling mechanism 50 for a wafer 23. The cooling mechanism 50 is formed with a groove 55 formed on the upper surface side of the electrostatic chuck 37, and a supplying pipe 51 and an exhaust pipe 53 for the gas (He, Ar, N<SB>2</SB>or the like). The end of the exhaust pipe 53 is connected to the end of a main pipe 43a for the exhaust pipe 43 for an air guide. The exhaust pipe 53 for a chuck is integrated with the exhaust pipe 43 for the air guide of a guide bar 33, and therefore, they are constituted as a big and short distance exhaust route, thereby permitting to exhaust the gas in a short period of time. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an exhaust device that exhausts a gas used in a vacuum chamber such as an electron beam exposure apparatus or a CVD. In particular, the present invention relates to an exhaust device and the like having an advantage that the degree of vacuum in a vacuum chamber can be improved.
[0002]
[Prior art]
A conventional technique will be described using an exposure apparatus disclosed in Japanese Patent Application Laid-Open No. 2001-196290 as an example.
FIG. 4 is a diagram showing an outline of an exposure apparatus disclosed in Japanese Patent Application Laid-Open No. 2001-196290. In this figure, the chamber 101, the chuck 109, the wafer 111, and the like are shown as schematic cross-sectional views, and the supply system and exhaust system for the heat transfer gas in the lower part of the figure are shown as piping diagrams. .
[0003]
This charged particle beam exposure apparatus includes a wafer chamber (vacuum chamber) 101 and an optical lens barrel 115.
A stage 107, a chuck 109, and the like are housed in the wafer chamber 101.
A charged particle beam optical system 113 including a charged particle beam source (such as an electron gun 114) is arranged in the optical lens barrel 115. The charged particle beam bundle CPB emitted from the charged particle beam source 114 is converged and deflected through the optical system 113, and forms an image on the processing surface (upper surface) of the wafer (sensitive substrate) 111.
[0004]
A chamber exhaust device 105 including a vacuum pump is connected to the lower right of the chamber 101 in the drawing. In the apparatus 105, the inside of the chamber 101 is evacuated and evacuated. A chamber vacuum gauge 103 is attached to the upper right of the figure. The inside of the chamber 101 is maintained at a predetermined degree of vacuum (for example, 1.3 × 10 ⁻³ Pa (10 ⁻⁵ Torr)).
[0005]
The stage 107 arranged in the chamber 101 has a chuck 109 mounted thereon and moves in the chamber 101. On the suction surface (upper surface) of the chuck 109 mounted on the upper surface of the stage 107, a groove (gap) 127 dug toward the lower side of the paper is formed. The gap 127 between the wafer 111 and the chuck 109 is filled with He gas as a heat transfer gas. By releasing heat from the wafer 111 to the chuck 109 via this gas, thermal expansion of the wafer 111 can be suppressed. An electrode (not shown) is embedded in the chuck 109, and when a voltage is applied to this electrode, an electrostatic force is generated between the chuck 109 and the wafer 111, and the attracted surface (lower surface) of the wafer 111 Adheres to the upper surface of the chuck 109.
[0006]
Subsequently, a heat transfer gas supply system will be described.
A gas introduction hole 117 is provided at the center of the chuck 109. The gas introduction hole 117 penetrates through the chuck 109 and the stage 107 and reaches the lower surface of the stage 107. A gas introduction valve 119 is attached to the gas introduction hole 117 on the exit side of the stage 107. The gas introduction valve 119 is directly attached to the structure of the stage 107. A gas introduction pipe 121 is connected to the end of the gas introduction valve 119 (below the figure). A gas introduction tube gauge (sensor) 123 is attached to the gas introduction tube 121.
[0007]
A gas flow controller 131 is connected to the upstream side of the gas introduction pipe 121 via a three-way valve 125. A gas supply source (gas cylinder) 132 is connected upstream of the gas flow controller 131. He gas is stored in the cylinder 132. When supplying the heat transfer gas to the chuck 109, the gas flow controller 131 is controlled so that the pressure of the gas introduction pipe gauge 123 becomes a desired value. The target pressure value in the gap 127 between the chuck 109 and the wafer 111 is, for example, 1.3 kPa (10 Torr). This target value is determined in consideration of the balance between the electrostatic force between the chuck 109 and the wafer 111. An exhaust pump 129 is connected to another port of the three-way valve 125. At the time of gas exhaustion, the three-way valve 125 can be switched to the exhaust pump 129 side (the gas flow controller 131 side is closed) to exhaust gas from the gas introduction pipe 121.
[0008]
Next, the heat transfer gas exhaust system will be described.
Gas exhaust holes 133 are provided at left and right corners of the chuck 109. After the gas exhaust holes 133 merge into one in the chuck 109, they penetrate the stage 107 and reach the lower surface of the stage 107. A gas exhaust valve 135 is attached downstream of the gas exhaust hole 133. The gas exhaust valve 135 is directly attached to the structure of the stage 107. A gas exhaust pipe 137 is connected to the end of the gas exhaust valve 135 (below the figure). A gas discharge pipe gauge 139 is attached to the gas discharge pipe 137. Further, an exhaust pump 141 is connected to a downstream end of the discharge pipe 137.
[0009]
Next, the operation of the gas supply system and the exhaust system in the electrostatic chuck 109 will be described.
First, when there is no wafer 111 on the chuck 109, both the gas introduction valve 119 and the gas exhaust valve 135 are closed. When the wafer 111 to be processed is placed on the chuck 109, an electric current is supplied to an electrode (not shown) to attract the wafer 111.
[0010]
Next, the gas is filled into the gap 127 from the gas cylinder 132 through the gas flow controller 131, the three-way valve 125, the gas introduction pipe 121, the gas introduction valve 119, and the gas introduction hole 117. At this time, the gas flow rate of the gas flow rate controller 131 is controlled while monitoring the gas pressure in the gap 127 with the gas introduction pipe gauge 123. The exhaust pump 129 is shut off by a three-way valve 125.
After the start of the exposure, the leaked gas is continuously supplied from the gas introduction pipe 121 to the gap 127. The exhaust valve 135 is always closed during the exposure. The exhaust pump 141 is always running. At this time, the inside of the gas discharge pipe 137 is evacuated to a vacuum of about 1.3 × 10 ⁻¹ Pa (10 ⁻³ Torr) or more.
[0011]
When exchanging the wafer 111 after the exposure is completed, the following is performed.
First, the gas introduction valve 119 is closed, the gas flow controller 131 side of the three-way valve 125 is closed, and the exhaust pump 129 side is opened. Then, the exhaust pump 129 is operated. On the exhaust side, when the gas exhaust valve 135 is opened, the He gas filled in the gap 127 between the wafer 111 and the chuck 109 is quickly exhausted by the action of the vacuum buffer in the gas exhaust pipe 137. Further, when it is confirmed by the gas introduction pipe gauge 123 that the pressure of the gas introduction pipe 121 has sufficiently decreased, the gas introduction valve 119 is also opened and the gas is exhausted from the gas introduction pipe 121.
[0012]
[Problems to be solved by the invention]
The above-described charged particle beam exposure apparatus has the following problems regarding the gas exhaust structure used in the vacuum chamber 101.
(1) Since the exhaust pumps 129 and 141 are structurally attached to the outside of the chamber 101, the gas introduction pipe 121 and the gas discharge pipe 137 connected to the pumps 129 and 141 become longer. Then, these long tubes 121 and 137 must be routed into the chamber 101.
(2) Since the air is exhausted through the long pipes 121 and 137, the exhaust resistance is increased and the exhaust takes a long time.
(3) The degree of vacuum in the chamber 101 may be deteriorated due to outgas from the pipes 121 and 137 drawn into the chamber 101.
[0013]
The present invention has been made to solve such a problem, and can exhaust gas used in a vacuum chamber in a short time, or can suppress deterioration of the degree of vacuum in the vacuum chamber. It is an object of the present invention to provide an exhaust device having the advantages described above and an exposure apparatus having the exhaust device.
[0014]
[Means for Solving the Problems]
In order to solve the above-mentioned problem, an exhaust device of the present invention is a device for exhausting gas in a vacuum chamber provided with a gas bearing guide (air guide) therein, and uses gas used in other devices other than the air guide. The air is discharged out of the chamber through an exhaust system of the air guide.
[0015]
In other words, the exhaust of equipment used for purposes other than the air guide in the chamber is integrated into the exhaust system of the air guide. By exhausting using a thick and short exhaust path, the gas used in the chamber can be exhausted in a short time. In addition, since a large number of exhaust tubes are not routed into the vacuum chamber, deterioration of the degree of vacuum in the chamber due to outgas from the tubes can be suppressed.
[0016]
In the exhaust device of the present invention, a vacuum valve may be provided between the other device and the air guide exhaust system.
When evacuating from the other device, opening the vacuum valve can shorten the evacuation time because the piping to the valve is evacuated in advance. When the amount of exhaust from the air guide is large, backflow of gas from the air guide can be prevented.
[0017]
An exposure apparatus according to the present invention is an exposure apparatus that selectively irradiates an energy beam on a sensitive substrate in a vacuum to form a pattern, comprising: a vacuum chamber; and the sensitive substrate or the pattern disposed in the vacuum chamber. A stage device having a gas bearing guide (air guide) for moving and positioning the original; and an exhaust device for exhausting gas used in the vacuum chamber, wherein the exhaust device is other than the air guide. The gas used in the device is discharged out of the chamber through an exhaust system of the air guide.
[0018]
In the exposure apparatus of the present invention, the other device may be a wafer temperature adjusting mechanism of the electrostatic chuck for fixing a wafer.
[0019]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a sectional view showing the periphery of a wafer stage of an exposure apparatus according to a first embodiment of the present invention, and the configuration of an air supply system and an exhaust system of the stage.
FIG. 1 shows the inside of the wafer chamber 30. Although not shown in the figure, a charged particle beam optical system shown in FIG. 4 is disposed above the wafer chamber 30. The inside of the chamber 30 is usually evacuated. A support 31 is provided upright at the bottom of the chamber 30. A guide bar 33 of an air guide 32 is provided on the support 31.
[0020]
A slider 35 is assembled to the guide bar 33 in a non-contact manner. The slider 35 is slidable while being guided by the guide bar 33. The support 31, the guide bar 33, and the slider 35 constitute the wafer stage 24 (see also reference numeral 107 in FIG. 4). An electrostatic chuck 37 is mounted on the upper surface of the slider 35. The wafer 23 on the slider 35 is suction-held by the electrostatic chuck 37.
[0021]
Inside the guide bar 33, a gas (air) supply pipe 41 and a discharge pipe 43 (pipe for air guide) are provided.
An end 42 (the right end in FIG. 1) of the air guide supply pipe 41 is connected to a pneumatic source (not shown). The supply pipe 41 includes a main pipe 41a extending in the guide bar 33 in the lateral direction, and a plurality of branch pipes 41b that are separated from the main pipe 41a and extend to the upper surface of the air guide.
An end 44 (the right end in FIG. 1) of the air guide discharge pipe 43 is connected to an exhaust pipe (not shown) outside the chamber 30. The discharge pipe 43 includes a main pipe 43a extending in the guide bar 33 in the lateral direction, and a plurality of branch pipes 43b that are separated from the main pipe 43a and extend to the upper surface of the air guide.
[0022]
The air sent from the air source passes through the main pipe 41a of the air guide supply pipe 41, and reaches the upper surface of the guide bar from the branch pipe 41b. The slider 35 is held by the guide bar 33 in a non-contact manner by this air pressure. The air that has flowed out of the guide bar 33 is sucked from the branch pipe 43b of the air guide discharge pipe 43, and is exhausted to the outside of the chamber 30 through the main pipe 43a.
[0023]
In FIG. 1, a cooling mechanism 50 for the wafer 23 is provided on the electrostatic chuck 37 on the air guide 32. The cooling mechanism 50 includes a groove 55 provided on the upper surface side of the electrostatic chuck 37, and a gas supply pipe 51 and a discharge pipe 53 (chuck pipe) connected to the groove 55. Incidentally, the gas used in the cooling mechanism 50 is He or Ar, _{N 2} and the like.
[0024]
An end 52 (right end in FIG. 1) of the chuck supply pipe 51 is connected to a gas supply source (not shown). On the other hand, the end 54 of the chuck discharge pipe 53 is connected to the end of the main pipe 43a of the air guide discharge pipe 43 described above. A non-metallic (for example, resin) vacuum valve 57 is incorporated in the chuck outlet side of the chuck discharge pipe 53. The vacuum valve 57 can be opened and closed using the power of a movable part such as a compressed air, a piezoelectric actuator, or a stage.
[0025]
According to such an air supply / discharge system, since the chuck discharge pipe 53 of the wafer cooling mechanism 50 of the electrostatic chuck 37 is integrated with the air guide exhaust pipe 43 of the guide bar 33, a thick and short distance is provided. Exhaust path. By evacuating using the chuck discharge pipe 53, it is possible to evacuate in a short time. In addition, since a large number of exhaust tubes are not routed into the chamber 30, deterioration of the degree of vacuum in the chamber 30 due to outgas from the tubes can be suppressed.
[0026]
Further, when exhausting from the wafer cooling mechanism 50, if the vacuum valve 57 incorporated in the chuck exhaust pipe 53 is opened, the evacuation time can be shortened because the pipe section up to the valve 57 is previously evacuated. Further, when the amount of exhaust gas from the guide bar 33 is large, there is an effect that the backflow of gas from the guide bar 33 can be prevented.
[0027]
Hereinafter, modified examples of the present invention will be described.
FIG. 2 is a cross-sectional view showing the periphery of a wafer stage of an exposure apparatus according to a second embodiment of the present invention and the configuration of an air supply system and an exhaust system of the stage.
FIG. 3 is a sectional view showing the periphery of a wafer stage of an exposure apparatus according to a third embodiment of the present invention, and the configuration of an air supply system and an exhaust system of the stage.
[0028]
In the example of FIG. 2, unlike the wafer cooling mechanism 50 described in FIG. 1, the supply-side pipe 51 and the discharge-side pipe 53 are integrated before entering the electrostatic chuck 37. Vacuum valves 59, 57 made of resin or the like are incorporated in these pipes 51, 53, respectively. In this case, when the valve 59 on the air supply side is opened, the gas sent from the supply pipe 51 is supplied to the electrostatic chuck 37. On the other hand, when the exhaust side valve 57 is opened, the gas in the electrostatic chuck 37 is exhausted out of the chamber 30 through the exhaust pipe 53 and the air guide exhaust pipe 43 of the guide bar 33. Such a piping configuration has an advantage that the pipeline inside the electrostatic chuck 37 is simplified.
[0029]
In the example of FIG. 3, similarly to the wafer cooling mechanism 50 described in FIG. 2, the supply-side pipe 51 and the discharge-side pipe 53 are integrated before entering the electrostatic chuck 37. However, in the example of FIG. 2, there are no vacuum valves 59 and 57 incorporated in the supply pipe 51 and the discharge pipe 53, respectively, and in the example of FIG. . The three-way valve 58 is made of non-metal such as resin. Such a piping configuration has an advantage that the valve configuration is further simplified as compared with FIG.
[0030]
【The invention's effect】
As is apparent from the above description, according to the present invention, the gas used in the vacuum chamber can be evacuated in a short time, or the advantage that the deterioration of the degree of vacuum in the vacuum chamber can be suppressed can be suppressed. Exhaust device and the like can be provided.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing the periphery of a wafer stage of an exposure apparatus according to a first embodiment of the present invention and the configuration of an air supply system and an exhaust system of the stage.
FIG. 2 is a cross-sectional view showing the periphery of a wafer stage of an exposure apparatus according to a second embodiment of the present invention and the configuration of an air supply system and an exhaust system of the stage.
FIG. 3 is a cross-sectional view showing the periphery of a wafer stage of an exposure apparatus according to a third embodiment of the present invention and the configuration of an air supply system and an exhaust system of the stage.
FIG. 4 is a diagram showing an outline of an exposure apparatus disclosed in Japanese Patent Application Laid-Open No. 2001-196290.
[Explanation of symbols]
23 Wafer 30 Wafer chamber 31 Support 32 Air guide 33 Guide bar 35 Slider 37 Electrostatic chuck 41 Air guide supply pipe 41a Main pipe 41b Branch pipe 43 Air guide discharge pipe 43a Main pipe 43b Branch pipe 50 Cooling mechanism 51 Chuck Supply pipe 53 Chuck discharge pipe 55 Groove 57, 59 Vacuum valve 58 Three-way valve

Claims (4)

An apparatus for exhausting gas from a vacuum chamber provided with a gas bearing guide (air guide) inside,
An exhaust device, wherein a gas used in equipment other than the air guide is exhausted out of the chamber through an exhaust system of the air guide. The exhaust device according to claim 1, wherein a vacuum valve is disposed between the other device and the air guide exhaust system. An exposure apparatus for selectively irradiating an energy ray on a sensitive substrate in a vacuum to form a pattern,
A vacuum chamber;
A stage device having a gas bearing guide (air guide) for moving and positioning the sensitive substrate or the pattern master placed in the vacuum chamber;
An exhaust device for exhausting gas used in the vacuum chamber,
An exposure apparatus, wherein the exhaust device discharges a gas used by another device other than the air guide to the outside of the chamber through an exhaust system of the air guide. 4. The exposure apparatus according to claim 3, wherein the other device is a wafer temperature adjusting mechanism of an electrostatic chuck for fixing a wafer.

Images