JP2004031678A - Semiconductor device, and holder for mounting semiconductor element - Google Patents

Semiconductor device, and holder for mounting semiconductor element Download PDF

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Publication number
JP2004031678A
JP2004031678A JP2002186631A JP2002186631A JP2004031678A JP 2004031678 A JP2004031678 A JP 2004031678A JP 2002186631 A JP2002186631 A JP 2002186631A JP 2002186631 A JP2002186631 A JP 2002186631A JP 2004031678 A JP2004031678 A JP 2004031678A
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semiconductor element
holder
electrode
semiconductor
resin adhesive
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JP2004031678A5 (en
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Kenji Toshida
利田　賢二
Tsuneo Hamaguchi
濱口　恒夫
Hitoshi Arai
新井　等
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
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    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with its thickness reducible without degrading mechanical strength in semiconductor element, and to provide a holder for mounting semiconductor elements in manufacturing of the semiconductor device. <P>SOLUTION: Board-side electrodes 2a on the surface of a wiring board 2 and element-side electrodes 3a on the surface of a semiconductor element 3 face each other. A hardened ACF (anisotropic conductive film) 7 filling up the gap between the wiring board 2 and the semiconductor element 3 covers the sides 3d of the semiconductor element 3, with its top surface 7a is so adjusted as to be flush with the rear surface 3c of the semiconductor element 3. A holder 4, which holds the semiconductor element 3 in the process of mounting the semiconductor element 3 on the wiring board 2, is so designed that it is wider than the semiconductor element 3 and that its surface to abut at the semiconductor element 3 is coated with a releasing agent 4c for preventing the adhesion of resin adhesive. <P>COPYRIGHT: (C)2004,JPO

Description

【０００１】
【発明の属する技術分野】
この発明は、薄い半導体素子および配線基板のそれぞれに設けられた電極同士を対向させた形で電気的接続がなされた薄型の半導体装置、およびその作製に用いる半導体素子搭載用保持具に関するものである。
【０００２】
【従来の技術】
半導体素子を配線基板に接続した半導体装置において、その接続形態には目的により様々なものがあるが、なかでもフリップチップ接続は、最も小さく実装することが可能な実装形態として知られている。フリップチップ接続を低コストで実現できる方法の一つとして、予め樹脂接着剤を配置した配線基板に半導体素子を押し付け、樹脂接着剤を硬化させる方法が知られている。
【０００３】
図８および図９は、上記の方法によるフリップチップ接続をＡＣＦ（Ａｎｉｓｏｔｒｏｐｉｃ　Ｃｏｎｄｕｃｔｉｖｅ　Ｆｉｌｍ　；異方性導電接着フィルム）を用いて行った従来の半導体装置の説明図であり、図８（ａ）〜（ｃ）は一般的な厚さ（０．４ｍｍ以上）の半導体素子を配線基板に接続する工程を段階的に示す断面図、特に図８（ｃ）は完成した半導体装置の断面図である。図９は０．３ｍｍ厚以下の薄い半導体素子を用いて同様な工程で作製され、完成した半導体装置の概略的な断面図である。いずれも電極を含む部分における断面図であり、断面を示すハッチングは一部省略する。
【０００４】
図において、４１は半導体装置である。４２は配線基板であり、４２ａは基板側の電極である。４３は半導体素子であり、４３ａは突起状の素子側の電極である。半導体素子４３の、素子側の電極４３ａが設けられている側の面を表面とし、これとは反対側の面を裏面とする。４４は半導体素子４３を配線基板４２に実装する際に半導体素子４３を固定する保持具である。保持具４４の大きさは、通常半導体素子４３と同じ大きさか、もしくは少し小さめである。これは、後述するＡＣＦ４５を予め配置した配線基板４２上に、半導体素子４３を搭載する際に、半導体素子４３の周囲にはみ出してくるＡＣＦが、保持具４４に付着するのを防ぐためである。４４ａは保持具４４の中心部分に貫通して設けられた吸引穴であり、上述の固定は、この吸引穴４４ａから図示しない装置または器具を用いて吸引して、半導体素子４３を保持具４４側に押し付けることにより行う。
【０００５】
４５はＡＣＦである。ＡＣＦ４５は、後述する導電性粒子４５ａをエポキシ系の樹脂接着剤中に混入させたフィルム状の接着剤である。４５ａは直径５μｍ程度の大きさを有するＡＣＦ中の導電性粒子であり、たとえばＡｕめっきしたプラスチックボール、または金属ボール等が用いられる。４６は半導体素子４３の押し付け、および加熱により流動して半導体素子４３の周囲に広がり、その後硬化した硬化ＡＣＦである。５１は薄い半導体素子を用いて作製された半導体装置である。５３は０．３ｍｍ厚以下の薄い半導体素子である。５３ａは突起状の素子側の電極であり、５６は半導体装置４１の硬化ＡＣＦ４６と同様の、硬化ＡＣＦである。硬化ＡＣＦ５６は、半導体素子５３が薄いため、半導体素子５３の周囲に広がった部分が、この半導体素子５３の裏面よりも高く盛り上がった形状となっている。
【０００６】
次に半導体装置４１の作製方法について説明する。
まず、配線基板４２上にＡＣＦ４５を配置する（図８（ａ））。このＡＣＦ４５の厚さは、配線基板４２と半導体素子４３との間に十分に充填することができるように、基板側の電極４２ａおよび素子側の電極４３ａの厚さの和よりも２０μｍ以上厚く設定されている。
次に、半導体素子４３を、素子側の電極４３ａを下側に向けた状態で、保持具４４の吸引穴４４ａを通して図示しない装置または器具により吸引し、保持具４４に密着して固定する（図８（ｂ））。
【０００７】
次に、保持具４４を通して、たとえばセラミックヒーター等で加熱した半導体素子４３を配線基板４２に押し付けて、上述の吸引を止め、保持具４４を離す。このとき、半導体素子４３の押し付けと半導体素子４３からの熱とにより、ＡＣＦ４５は流動して、半導体素子４３の周囲にはみ出して広がり、半導体素子４３の端面を這い上がり、その後硬化して硬化ＡＣＦ４６となる。このとき、基板側の電極４２ａと素子側の電極４３ａとの間隙に存在していた導電性粒子４５ａが上述の押し付けにより潰され、これにより配線基板４２と半導体素子４３との電気的接続が達成される（図８（ｃ））。
【０００８】
硬化ＡＣＦ４６は、たとえば半導体素子４３の幅が縦横１０ｍｍで厚さが０．５ｍｍの場合、半導体素子４３の端面の０．３ｍｍ程度の高さまで這い上がって形成される。また、半導体装置５１のように薄い半導体素子５３を用いた場合には、硬化ＡＣＦ５６の半導体素子５３の周囲に広がった部分は、半導体素子５３の裏面よりも高く盛り上がった形状に形成されている。この硬化ＡＣＦ４６および５６は、半導体素子４３および５３の周辺を固定し、機械的強度を高めることができるという特徴がある。
【０００９】
【発明が解決しようとする課題】
従来の半導体装置４１および５１は以上のように構成されているので、以下に示すような課題があった。
半導体素子を、ウエハからダイシングによって切り出したとき、その端面（側面）の角部にできたダイシング刃のダイヤモンド砥粒による傷は、半導体素子をへき開し、割れる原因となるおそれがあることが知られている。電子機器を薄く小型にするために薄い半導体装置が求められてきているため、半導体素子も薄くする必要があるが、薄い半導体素子ほど容易にへき開される。特に、半導体素子を、これよりもたとえば熱膨張率が数倍高い樹脂からなる配線基板に接続した場合、半導体素子は大きく反り、上述の端面からへき開し、割れやすくなってしまう。
半導体装置４１および５１では、硬化ＡＣＦ４６および５６により、半導体素子４３および５３の周囲が保護されているが、薄い半導体素子５３を用いた半導体装置５１の場合、硬化ＡＣＦ５６は高く盛り上がって形成されてしまうため、半導体装置を薄くしようとしても限界があるという課題があった。
【００１０】
この発明は上記のような課題を解決するためになされたもので、半導体素子の機械的強度を保ちながらも、薄型化を実現することが可能な半導体装置を得ることを目的とする。また、そのような半導体装置を作製するときに用いる、半導体素子搭載用保持具を得ることを目的とする。
【００１１】
【課題を解決するための手段】
この発明に係る半導体装置は、第一の電極を表面に備えた配線基板と第二の電極を表面に備えた半導体素子との電極同士が対向し、配線基板と半導体素子との間隙に充填されている硬化した樹脂接着剤が半導体素子の側面を覆い、かつその上面が半導体素子の裏面と同じ高さに揃っているものである。
【００１２】
この発明に係る半導体素子搭載用保持具は、半導体素子よりも広い幅を有する本体部と、この本体部の中心部分に貫通して設けられた吸引用の穴と、本体部の半導体素子に当接する側の面を覆う樹脂接着剤が付着しない材料からなる離型材層とを備えたものである。
【００１３】
この発明に係る半導体素子搭載用保持具は、半導体素子よりも広い幅を有し、かつ半導体素子に当接する側の面の、半導体素子の裏面の縁部分に対向する部分から外側の範囲に凹部を有する本体部と、この本体部の中心部分に貫通して設けられた吸引用の穴と、凹部に埋設された樹脂接着剤が付着しない材料からなる離型材部とを備えたものである。
【００１４】
この発明に係る半導体素子搭載用保持具は、本体部がセラミック系の材料からなり、離型材部はフッ素系樹脂またはポリイミド系樹脂からなるものである。
【００１５】
この発明に係る半導体素子搭載用保持具は、本体部がセラミック系材料からなり、離型材部はフッ素系樹脂を含浸させたセラミック系材料からなるものである。
【００１６】
【発明の実施の形態】
以下、この発明の実施の一形態を説明する。
実施の形態１．
図１はこの発明の実施の形態１による半導体装置１の構成を示す概略的な断面図、図２（ａ）〜（ｄ）は半導体装置１の作製工程を段階的に示す断面図であり、電極を含む部分の断面図で示す。図２（ｂ）〜（ｃ）はこの発明の実施の形態１による半導体素子搭載用保持具４の構成を示す断面図である。いずれも断面を示すハッチングは一部省略する。
【００１７】
図において、１は半導体装置である。２は配線基板であり、２ａは配線基板２の表面に設けられた基板側の電極（第一の電極）である。３は半導体素子であり、３ａは半導体素子３の表面に設けられた突起状の素子側の電極（第二の電極）である。３ｂは半導体素子の表面（表面）であり、素子側の電極３ａが設けられている側の面である。３ｃは半導体素子の裏面であり、半導体素子の表面３ｂとは反対側の面である。３ｄは半導体素子の側面である。
【００１８】
４は半導体素子３を配線基板２に実装する際に半導体素子３を固定する保持具（半導体素子搭載用保持具）である。４ａは保持具４の本体部である。本体部４ａの縦横の幅は、半導体素子３の縦横の幅よりも広いものとする。この広さは具体的には、半導体素子３を、後述するＡＣＦ５を介して配線基板２に搭載する際に、半導体素子３の外側にはみ出したＡＣＦが保持具４の下側の面に当接し、硬化したＡＣＦの上面が、半導体素子の裏面３ｃと同じ高さに揃えられることが達成できる程度の広さとする。本体部４ａは、一般的に熱伝導性の良い材料として知られる、たとえば黄銅、アルミニウム等の金属、あるいは窒化アルミニウム、窒化ボロン、窒化珪素等のセラミック材料を用いて形成されている。半導体素子３の加熱は、保持具４を通して行うので、上述の熱伝導性の良い材料は、熱による変形のおそれが少ない材料が好適である。
【００１９】
４ｂは本体部４ａの中心部分に貫通して設けられた吸引穴（吸引用の穴）であり、上述の固定は、この吸引穴４ｂから図示しない装置または器具を用いて吸引して、半導体素子３を保持具４側に押し付けることにより行う。４ｃは保持具４の本体部４ａの、半導体素子３を吸い付ける側の表面を覆うように設けられた離型材層である。離型材層４ｃは、後述するＡＣＦが付着しない材料、たとえばフッ素系樹脂、シリコン系樹脂、またはポリイミド系樹脂からなる。
【００２０】
保持具４は、例えば以下のようにして作製される。
まず、窒化アルミニウム等の熱伝導性の良いセラミック系材料を、本体部４ａの形状に加工する。次に、溶剤に溶かしたフッ素系樹脂等を好適な方法により保持具４の表面に塗布し、離型材層４ｃを形成する。次に、全体を３８０℃前後の温度で焼き付け、余分に付着した材料を研削して除去し、正確な所望の寸法の保持具４に仕上げる。
【００２１】
５はＡＣＦ（樹脂接着剤）である。ＡＣＦ５は、後述する導電性粒子５ａをエポキシ系の樹脂接着剤中に混入させたフィルム状の接着剤である。５ａは直径５μｍ程度の大きさを有するＡＣＦ５中の導電性粒子であり、たとえばＡｕめっきしたプラスチックボール、または金属ボール等が用いられる。６は半導体素子３の押し付け、および加熱により流動して半導体素子３の周囲に広がり、半導体素子３の端面を這い上がったＡＣＦであり、７はその後硬化した硬化ＡＣＦ（硬化した樹脂接着剤）である。７ａは硬化ＡＣＦ７の上面（上面）である。
【００２２】
次に半導体装置１の作製方法について説明する。
まず、配線基板２上にＡＣＦ５を配置する（図２（ａ））。このＡＣＦ５の厚さは、配線基板２と半導体素子３との間に十分に充填することができるように、基板側の電極２ａおよび素子側の電極３ａの厚さの和よりも２０μｍ以上厚く設定されている。
次に、半導体素子３を、素子側の電極３ａを下側に向けた状態で、保持具４の吸引穴４ｂを通して図示しない装置または器具により吸引し、保持具４に密着して固定する（図２（ｂ）の上側の図）。
【００２３】
次に、保持具４を通して、たとえばセラミックヒーター等で加熱した半導体素子３を配線基板２に押し付ける（図２（ｂ）→図２（ｃ））。このとき、半導体素子３の押し付けと半導体素子３からの熱とにより、ＡＣＦ５は流動して、半導体素子３の周囲にはみ出して広がり、半導体素子３の端面を這い上がったＡＣＦ６となる。そして、基板側の電極２ａと素子側の電極３ａとの間隙に存在していた導電性粒子５ａが上述の押し付けにより潰され、これにより配線基板２と半導体素子３との電気的接続が達成される（図２（ｃ））。
【００２４】
その後、吸引を止め、保持具４を離す。離型材層４ｃにより、ＡＣＦは保持具４に付着することがない。このとき、半導体素子３の端面を這い上がったＡＣＦ６は硬化が完了しており、硬化ＡＣＦ７が形成される。硬化ＡＣＦ７は、半導体素子３の側面３ｄを覆い、かつ硬化ＡＣＦ７の上面７ａは半導体素子３の裏面３ｃと同じ高さに揃って形成されている（図２（ｄ）。この硬化ＡＣＦ７は、半導体素子３の周辺を固定し、機械的強度を高めることができる。
【００２５】
以上のように、この発明の実施の形態１の半導体装置１によれば、硬化したＡＣＦ７の上面７ａが、半導体素子３の周辺に、この半導体素子３の裏面３ｃと同じ高さに揃って形成されているので、半導体素子３の機械的強度を保ちながらも、半導体装置の薄型化を実現できるという効果が得られる。
また、実施の形態１の保持具４によれば、その本体部４ａが半導体素子３よりも広い幅を有し、かつ保持具４の半導体素子３に当接する側の面は、ＡＣＦが付着しない材料からなる離型材層４ｃにより覆われているので、ＡＣＦの形状を、半導体素子３の側面３ｄを覆い、かつその上面は半導体素子３の裏面３ｃと同じ高さに揃う形状にすることができるという効果が得られる。
【００２６】
次に、実施の形態１の変形例三例につき説明する。
図３は実施の形態１の第一の変形例による半導体装置１１の構成を示す概略的な断面図であり、図１と同様の部分の断面で示してある。断面を示すハッチングは一部省略している。図において、１１は半導体装置である。１７は硬化した樹脂接着剤である。樹脂接着剤１７としては、たとえばエポキシ系、アクリル系またはフェノール系のものを用いる。１７ａは硬化した樹脂接着剤の上面である。半導体装置１１は、ＡＣＦの代わりに導電性粒子の存在しない樹脂接着剤を用いて半導体装置を構成した例であり、基板側の電極２ａと素子側の電極３ａとを直接接触させることにより配線基板２と半導体素子３との電気的接続を行っている。その他の部分においては、半導体装置１と同様であるため、詳細な説明を省略する。
【００２７】
図４は実施の形態１の第二の変形例による半導体装置２１の構成を示す概略的な断面図であり、図１と同様の部分の断面で示してある。断面を示すハッチングは一部省略している。図において、１３は半導体素子である。１３ａは半導体素子１３側の、はんだによる突起状電極である。１３ｂは半導体素子の表面、１３ｃは半導体素子の裏面、１３ｄは半導体素子の側面である。２１は半導体装置である。半導体装置２１は、半導体装置１１と同様に、ＡＣＦの代わりに導電性粒子の存在しない樹脂接着剤を用いて半導体装置を構成した例であり、基板側の電極２ａとはんだによる突起状電極１３ａとを直接接触させた後、半導体素子１３を加熱してはんだを溶融させることにより、配線基板２と半導体素子１３との電気的接続を行っている。その他の部分においては、半導体装置１および１１と同様であるため、詳細な説明を省略する。
【００２８】
図５は実施の形態１の第三の変形例による半導体装置３１の構成を示す概略的な断面図であり、電極を含む部分の断面で示してある。断面を示すハッチングは一部を除き省略する。半導体装置３１は、二つの半導体素子を搭載して半導体装置を構成した例である。
【００２９】
図において、２ｂは、配線基板２上に設けられ、後述する第二の半導体素子８と電気的に接続される基板側の第二の電極である。８は、後述する接着層９を介して半導体素子３上に接着して配置された第二の半導体素子である。第二の半導体素子８は、半導体素子３よりも幅が広いが、半導体素子３の周囲にはみ出した部分における、硬化したＡＣＦ７が、半導体素子３の裏面と同じ高さに揃っているため、半導体素子３上に安定した状態で設置されている。８ａは第二の半導体素子８上に設けられた第二の素子側の電極である。８ｂは、基板側の第二の電極２ｂと、第二の素子側の電極８ａとに接続され、配線基板２と第二の半導体素子８との電気的接続を行うワイヤである。
９は半導体素子３と第二の半導体素子８とを接着する接着層である。１０は、ワイヤ８ｂが破損しないように、配線基板２上に搭載されている構成要素の周囲を覆うように設けられたモールド樹脂である。既出の構成要素については詳細な説明を省略する。
【００３０】
実施の形態２．
図６はこの発明の実施の形態２による保持具１４の構成を示す概略的な説明図であり、図６（ａ）は本体部１４ａの凹部１４ｂおよびこれに埋設された離型材部１４ｄが設けられている側の面の平面図であり、図６（ｂ）は吸引穴１４ｃを通る部分に沿って切った断面図、図６（ｃ）は半導体素子３を吸引して保持具１４に固定したときの様子を示す断面図である。断面を示すハッチングは一部を除き省略する。
【００３１】
図において、３ｅは半導体素子３の裏面の縁部分である。１４は樹脂接着剤を予め配置した配線基板上に半導体素子３を搭載する際に、この半導体素子３を固定するのに用いられる保持具（半導体素子搭載用保持具）である。１４ａは保持具４の本体部である。本体部１４ａの縦横の幅は、半導体素子３の縦横の幅よりも広いものとする。この広さは具体的には、半導体素子３を、ＡＣＦ等の樹脂接着剤を介して配線基板に搭載する際に、半導体素子３の外側にはみ出した樹脂接着剤が保持具１４の下側の面に当接し、このはみ出した部分の樹脂接着剤の上面が、半導体素子３の裏面３ｃと同じ高さに揃えられることが達成できる程度の広さとする。本体部１４ａは、一般的に熱伝導性の良い材料として知られる、たとえば黄銅、アルミニウム等の金属、あるいは窒化アルミニウム、窒化ボロン、窒化珪素等のセラミック材料を用いて形成されている。半導体素子３の加熱は、保持具１４を通して行うので、上述の熱伝導性の良い材料は、熱による変形のおそれが少ない材料が好適である。
【００３２】
１４ｂは半導体素子３の裏面３ｃの縁部分３ｅに対向する部分から外側の範囲に設けられた凹部である。１４ｃは本体部１４ａの中心部分に貫通して設けられた吸引穴（吸引用の穴）である。１４ｄは凹部１４ｂに埋設された離型材部である。離型材部１４ｄは半導体素子３の裏面の縁部分３ｅに当接するため、半導体素子３を配線基板側に押し付けるときに半導体素子３の周囲にはみ出してくるＡＣＦ等の樹脂接着剤に付着しない材料を用いる。たとえばフッ素系樹脂やポリイミド樹脂等は好適である。
【００３３】
保持具１４は、例えば以下のようにして作製される。
まず、窒化アルミニウム等の熱伝導性の良いセラミック材料を、本体部１４ａの形状に加工する。次に、溶剤に溶かしたフッ素系樹脂等を、例えば吹き付け等の好適な方法により凹部１４ｂに塗布し、離型材層１４ｄを形成する。次に、全体を３８０℃前後の温度で焼き付け、余分に付着した材料を研削して除去し、正確な所望の寸法の保持具１４に仕上げる。
【００３４】
以上のように、この実施の形態２の保持具１４によれば、固定する対象の半導体素子３よりも広い幅を有し、かつ半導体素子３の裏面の縁部分３ｅが当接する部分は離型材部１４ｄにより構成されているので、実施の形態１の保持具４と同様の効果が得られる。
【００３５】
実施の形態３．
図７はこの発明の実施の形態３による保持具２４の構成を示す概略的な断面図であり、半導体素子３を吸引して保持具２４に固定したときの様子を示す断面図を、図６と同様の部分の断面で示してある。断面を示すハッチングは一部省略している。
【００３６】
図において、２４は樹脂接着剤を予め配置した配線基板上に半導体素子３を搭載する際に、この半導体素子３を固定するのに用いられる保持具（半導体素子搭載用保持具）である。２４ａは保持具２４の本体部である。本体部２４ａの縦横の幅は、半導体素子３の縦横の幅よりも広いものとする。この広さは具体的には、半導体素子３を、ＡＣＦ等の樹脂接着剤を介して配線基板に搭載する際に、半導体素子３の外側にはみ出した樹脂接着剤が保持具２４の下側の面に当接し、このはみ出した部分の樹脂接着剤の上面が、半導体素子３の裏面３ｃと同じ高さに揃えられることが達成できる程度の広さとする。本体部２４ａは、一般的に熱伝導性の良い材料として知られる、たとえば黄銅、アルミニウム等の金属、あるいは窒化アルミニウム、窒化ボロン、窒化珪素等のセラミック材料を用いて形成されている。半導体素子３の加熱は、保持具２４を通して行うので、上述の熱伝導性の良い材料は、熱による変形のおそれが少ない材料が好適である。
【００３７】
２４ｂは半導体素子３の裏面の縁部分３ｅに対向する部分から外側の範囲に設けられた凹部である。２４ｃは本体部１４ａの中心部分に貫通して設けられた吸引穴（吸引用の穴）である。２４ｄは凹部２４ｂに埋設された離型材部であり、後述するフッ素系樹脂２４ｅを含浸している。離型材部２４ｄは半導体素子３の裏面の縁部分３ｅに当接するため、半導体素子３を配線基板側に押し付けるときに半導体素子３の周囲にはみ出してくるＡＣＦ等の樹脂接着剤に付着しない材料を用いる。
【００３８】
２４ｅは、離型材部２４ｄ中に含まれるフッ素系樹脂を模式的に示したものである。フッ素系樹脂２４ｅを含浸した離型材部２４ｄは、フッ素系樹脂のみで構成した場合と比較して、フッ素系樹脂の磨耗がなくなり、硬度も高くなるので、半導体素子３を配線基板２に搭載する際に、強く押し付けることができるという効果が得られる。
【００３９】
保持具２４は、例えば以下のようにして作製される。
まず、窒化アルミニウム等の熱伝導性の良いセラミック材料を、本体部２４ａの形状に加工する。次に、溶剤に溶かした材料、例えばフッ素系樹脂に窒化アルミニウムの粉末を混入した材料を、例えば吹き付け等の好適な方法により凹部２４ｂに塗布し、離型材層２４ｄを形成する。次に、全体を３８０℃前後の温度で焼き付け、余分に付着した材料を研削して除去し、正確な所望の寸法の保持具２４に仕上げる。
【００４０】
以上のように、この実施の形態３の保持具２４によれば、固定する対象の半導体素子３よりも広い幅を有し、かつ半導体素子３の裏面の縁部分３ｅが当接する部分は離型材部２４ｄにより構成されているので、実施の形態１の保持具４と同様の効果が得られる。
【００４１】
【発明の効果】
以上のように、この発明によれば、硬化した樹脂接着剤が、半導体素子の側面を覆い、かつその上面は半導体素子の裏面と同じ高さに揃うように半導体装置を構成したので、半導体素子の機械的強度を保ちながらも、薄型化を実現することが可能な半導体装置が得られる効果がある。
【００４２】
この発明によれば、半導体素子よりも広い幅を有する本体部と、この本体部の中心部分に貫通して設けられた吸引用の穴と、本体部の半導体素子に当接する側の面を覆う樹脂接着剤が付着しない材料からなる離型材層とを備えるように半導体素子搭載用保持具を構成したので、樹脂接着剤の形状を、半導体素子の側面を覆い、かつその上面は半導体素子の裏面と同じ高さに揃う形状にすることが可能な半導体素子搭載用保持具が得られる効果がある。
【００４３】
この発明によれば、半導体素子よりも広い幅を有し、かつ半導体素子に搭載する側の面の、半導体素子の裏面の縁部分に対向する部分から外側の範囲に凹部を有する本体部と、この本体部の中心部分に貫通して設けられた吸引用の穴と、凹部に埋設された、樹脂接着剤が付着しない材料からなる離型材部とを備えるように半導体素子搭載用保持具を構成したので、樹脂接着剤の形状を、半導体素子の側面を覆い、かつその上面は半導体素子の裏面と同じ高さに揃う形状にすることが可能な半導体素子搭載用保持具が得られる効果がある。
【図面の簡単な説明】
【図１】この発明の実施の形態１による半導体装置の構成を示す概略的な断面図である。
【図２】この発明の実施の形態１による半導体装置の作製工程を段階的に示す断面図である。
【図３】この発明の実施の形態１の第一の変形例による半導体装置の構成を示す概略的な断面図である。
【図４】この発明の実施の形態１の第二の変形例による半導体装置の構成を示す概略的な断面図である。
【図５】この発明の実施の形態１の第三の変形例による半導体装置の構成を示す概略的な断面図である。
【図６】この発明の実施の形態２による保持具の構成を示す概略的な断面図である。
【図７】この発明の実施の形態３による保持具の構成を示す概略的な断面図である。
【図８】従来の半導体装置の作製工程を段階的に示す断面図である。
【図９】従来の半導体装置の構成を示す概略的な断面図である。
【符号の説明】
１，１１，２１，３１　半導体装置、２　配線基板、２ａ　基板側の電極（第一の電極）、２ｂ　基板側の第二の電極、３，１３　半導体素子、３ａ　素子側の電極（第二の電極）、３ｂ，１３ｂ　半導体素子の表面（表面）、３ｃ，１３ｃ　半導体素子の裏面、３ｄ，１３ｄ　半導体素子の側面、３ｅ　裏面の縁部分（半導体素子の裏面の縁部分）、４，１４，２４　保持具（半導体素子搭載用保持具）、４ａ，１４ａ，２４ａ　本体部、４ｂ　吸引穴（吸引用の穴）、４ｃ　離型材層、５　ＡＣＦ（樹脂接着剤）、５ａ　導電性粒子、６　這い上がったＡＣＦ、７　硬化ＡＣＦ（硬化した樹脂接着剤）、７ａ　硬化ＡＣＦの上面（上面）、８　第二の半導体素子、８ａ　第二の素子側の電極、８ｂ　ワイヤ、９　樹脂接着層、１０　モールド樹脂、１３ａ　はんだによる突起状電極、１４ｂ，２４ｂ　凹部、１４ｃ，２４ｃ　吸引穴（吸引用の穴）、１４ｄ，２４ｄ　離型材部、１７　硬化した樹脂接着剤、１７ａ　硬化した樹脂接着剤の上面、２４ｅ　フッ素系樹脂。[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a thin semiconductor device in which electrodes provided on a thin semiconductor element and an electrode provided on a wiring substrate are opposed to each other and electrically connected to each other, and a semiconductor element mounting holder used for manufacturing the semiconductor device. .
[0002]
[Prior art]
In a semiconductor device in which a semiconductor element is connected to a wiring board, there are various connection forms depending on the purpose. Among them, flip-chip connection is known as a mounting form that can be mounted in the smallest size. As one of the methods that can realize flip-chip connection at low cost, there is known a method in which a semiconductor element is pressed against a wiring board on which a resin adhesive is arranged in advance, and the resin adhesive is cured.
[0003]
FIGS. 8 and 9 are explanatory views of a conventional semiconductor device in which flip-chip connection according to the above method is performed using an ACF (Anisotropic Conductive Film; anisotropic conductive adhesive film). FIG. 8C is a cross-sectional view showing a step-by-step process of connecting a semiconductor element having a general thickness (0.4 mm or more) to a wiring board. FIG. 8C is a cross-sectional view of a completed semiconductor device. FIG. 9 is a schematic cross-sectional view of a completed semiconductor device manufactured by a similar process using a thin semiconductor element having a thickness of 0.3 mm or less. Each is a cross-sectional view of a portion including an electrode, and hatching indicating a cross section is partially omitted.
[0004]
In the figure, reference numeral 41 denotes a semiconductor device. 42 is a wiring board, and 42a is an electrode on the board side. Reference numeral 43 denotes a semiconductor element, and 43a denotes a protruding element-side electrode. The surface of the semiconductor element 43 on which the element-side electrode 43a is provided is defined as the front surface, and the surface on the opposite side is defined as the back surface. Reference numeral 44 denotes a holder for fixing the semiconductor element 43 when mounting the semiconductor element 43 on the wiring board 42. The size of the holder 44 is usually the same size as the semiconductor element 43 or slightly smaller. This is to prevent the ACF protruding around the semiconductor element 43 from adhering to the holder 44 when the semiconductor element 43 is mounted on the wiring board 42 on which the ACF 45 described later is arranged in advance. Reference numeral 44a denotes a suction hole provided through the center of the holder 44, and the above-described fixing is performed by suctioning the semiconductor element 43 from the suction hole 44a using a device or an instrument (not shown) so that the semiconductor element 43 is held on the holder 44 side. This is done by pressing against
[0005]
45 is an ACF. The ACF 45 is a film-like adhesive in which conductive particles 45a described later are mixed into an epoxy-based resin adhesive. Reference numeral 45a denotes conductive particles in the ACF having a diameter of about 5 μm, for example, Au-plated plastic balls or metal balls. Reference numeral 46 denotes a hardened ACF which flows by being pressed by the semiconductor element 43 and heated and spreads around the semiconductor element 43, and thereafter hardened. Reference numeral 51 denotes a semiconductor device manufactured using a thin semiconductor element. Reference numeral 53 denotes a thin semiconductor element having a thickness of 0.3 mm or less. 53a is a protruding element-side electrode, and 56 is a cured ACF similar to the cured ACF 46 of the semiconductor device 41. Since the semiconductor element 53 is thin, the cured ACF 56 has a shape in which a portion spread around the semiconductor element 53 rises higher than the back surface of the semiconductor element 53.
[0006]
Next, a method for manufacturing the semiconductor device 41 will be described.
First, the ACF 45 is arranged on the wiring board 42 (FIG. 8A). The thickness of the ACF 45 is set to be 20 μm or more larger than the sum of the thicknesses of the substrate-side electrode 42a and the element-side electrode 43a so that the space between the wiring substrate 42 and the semiconductor element 43 can be sufficiently filled. Have been.
Next, the semiconductor element 43 is sucked by a device or an instrument (not shown) through the suction hole 44a of the holder 44 with the element-side electrode 43a facing downward, and is fixed to the holder 44 in close contact (FIG. 8 (b)).
[0007]
Next, the semiconductor element 43 heated by, for example, a ceramic heater or the like is pressed against the wiring board 42 through the holder 44 to stop the above-mentioned suction, and the holder 44 is released. At this time, due to the pressing of the semiconductor element 43 and the heat from the semiconductor element 43, the ACF 45 flows, protrudes to the periphery of the semiconductor element 43 and spreads, crawls up the end face of the semiconductor element 43, and then hardens to form a hardened ACF 46. Become. At this time, the conductive particles 45a existing in the gap between the electrode 42a on the substrate side and the electrode 43a on the element side are crushed by the above-described pressing, thereby achieving the electrical connection between the wiring substrate 42 and the semiconductor element 43. (FIG. 8C).
[0008]
For example, when the width of the semiconductor element 43 is 10 mm in length and width and 0.5 mm in thickness, the hardened ACF 46 is formed to crawl up to a height of about 0.3 mm on the end face of the semiconductor element 43. When a thin semiconductor element 53 is used as in the case of the semiconductor device 51, the portion of the cured ACF 56 extending around the semiconductor element 53 is formed in a shape higher than the back surface of the semiconductor element 53. The cured ACFs 46 and 56 are characterized in that the periphery of the semiconductor elements 43 and 53 can be fixed and mechanical strength can be increased.
[0009]
[Problems to be solved by the invention]
Since the conventional semiconductor devices 41 and 51 are configured as described above, there are the following problems.
When a semiconductor element is cut out from a wafer by dicing, it is known that scratches due to diamond abrasive grains of a dicing blade formed at a corner of an end face (side face) of the semiconductor element may cause the semiconductor element to be cleaved and cracked. ing. Since a thin semiconductor device has been demanded in order to make electronic equipment thinner and smaller, the semiconductor element also needs to be thinner. However, a thinner semiconductor element is easily cleaved. In particular, when the semiconductor element is connected to a wiring board made of a resin having, for example, a coefficient of thermal expansion several times higher than this, the semiconductor element is largely warped, cleaved from the above-described end face, and easily broken.
In the semiconductor devices 41 and 51, the surroundings of the semiconductor elements 43 and 53 are protected by the cured ACFs 46 and 56. However, in the case of the semiconductor device 51 using the thin semiconductor element 53, the cured ACF 56 is formed to be high. Therefore, there is a problem that there is a limit even if the semiconductor device is made thinner.
[0010]
The present invention has been made to solve the above-described problems, and has as its object to obtain a semiconductor device capable of achieving a reduction in thickness while maintaining the mechanical strength of a semiconductor element. It is another object of the present invention to obtain a semiconductor element mounting holder used when manufacturing such a semiconductor device.
[0011]
[Means for Solving the Problems]
In the semiconductor device according to the present invention, the electrodes of the wiring board having the first electrode on the surface and the semiconductor element having the second electrode on the surface face each other, and are filled in the gap between the wiring board and the semiconductor element. The cured resin adhesive covers the side surface of the semiconductor element, and its upper surface is flush with the rear surface of the semiconductor element.
[0012]
A holder for mounting a semiconductor element according to the present invention has a main body having a wider width than a semiconductor element, a suction hole provided through a central portion of the main body, and a semiconductor element of the main body. And a release material layer made of a material to which the resin adhesive covering the contacting side does not adhere.
[0013]
The holder for mounting a semiconductor element according to the present invention has a width wider than that of the semiconductor element, and a concave portion is formed in a range outside a portion of the surface in contact with the semiconductor element opposite to an edge portion of the back surface of the semiconductor element. , A suction hole provided penetrating through the center of the main body, and a release material portion made of a material embedded in the concave portion and to which the resin adhesive does not adhere.
[0014]
In the holder for mounting a semiconductor element according to the present invention, the main body portion is made of a ceramic material, and the release material portion is made of a fluorine-based resin or a polyimide-based resin.
[0015]
In the holder for mounting a semiconductor element according to the present invention, the main body portion is made of a ceramic material, and the release material portion is made of a ceramic material impregnated with a fluorine-based resin.
[0016]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, an embodiment of the present invention will be described.
Embodiment 1 FIG.
FIG. 1 is a schematic sectional view showing a configuration of a semiconductor device 1 according to a first embodiment of the present invention, and FIGS. 2A to 2D are sectional views showing steps of manufacturing the semiconductor device 1 step by step. It is shown in a sectional view of a portion including an electrode. FIGS. 2B to 2C are cross-sectional views showing the configuration of the semiconductor element mounting holder 4 according to the first embodiment of the present invention. In each case, hatching indicating a cross section is partially omitted.
[0017]
In the figure, reference numeral 1 denotes a semiconductor device. Reference numeral 2 denotes a wiring board, and reference numeral 2a denotes a substrate-side electrode (first electrode) provided on the surface of the wiring board 2. Reference numeral 3 denotes a semiconductor element, and reference numeral 3a denotes a protruding element-side electrode (second electrode) provided on the surface of the semiconductor element 3. Reference numeral 3b denotes a surface (front surface) of the semiconductor element, which is a surface on which the element-side electrode 3a is provided. Reference numeral 3c denotes a back surface of the semiconductor element, which is a surface opposite to the front surface 3b of the semiconductor element. 3d is a side surface of the semiconductor element.
[0018]
Reference numeral 4 denotes a holder (semiconductor element mounting holder) for fixing the semiconductor element 3 when mounting the semiconductor element 3 on the wiring board 2. 4a is a main body of the holder 4. The vertical and horizontal widths of the main body 4a are wider than the vertical and horizontal widths of the semiconductor element 3. Specifically, when the semiconductor element 3 is mounted on the wiring board 2 via an ACF 5 described later, the ACF protruding outside the semiconductor element 3 contacts the lower surface of the holder 4. The width is such that the upper surface of the cured ACF can be at the same height as the rear surface 3c of the semiconductor element. The main body 4a is formed using a metal such as brass or aluminum, which is generally known as a material having good thermal conductivity, or a ceramic material such as aluminum nitride, boron nitride or silicon nitride. Since the heating of the semiconductor element 3 is performed through the holder 4, the above-mentioned material having good thermal conductivity is preferably a material which is less likely to be deformed by heat.
[0019]
Reference numeral 4b denotes a suction hole (suction hole) provided through the center portion of the main body portion 4a, and the above-mentioned fixing is performed by suctioning from the suction hole 4b using a device or an instrument (not shown), and 3 is pressed against the holder 4 side. Reference numeral 4c denotes a release material layer provided so as to cover the surface of the body 4a of the holder 4 on the side where the semiconductor element 3 is sucked. The release material layer 4c is made of a material to which ACF described below does not adhere, for example, a fluorine-based resin, a silicon-based resin, or a polyimide-based resin.
[0020]
The holder 4 is manufactured, for example, as follows.
First, a ceramic material having good thermal conductivity such as aluminum nitride is processed into the shape of the main body 4a. Next, a fluorine-based resin or the like dissolved in a solvent is applied to the surface of the holder 4 by a suitable method to form a release material layer 4c. Next, the whole is baked at a temperature of about 380 ° C., and the extra-adhered material is removed by grinding, thereby finishing the holder 4 having an accurate desired size.
[0021]
Reference numeral 5 denotes an ACF (resin adhesive). The ACF 5 is a film-like adhesive in which conductive particles 5a described later are mixed into an epoxy-based resin adhesive. Reference numeral 5a denotes conductive particles in the ACF 5 having a diameter of about 5 μm, for example, Au-plated plastic balls or metal balls. Reference numeral 6 denotes an ACF which flows by the pressing and heating of the semiconductor element 3 and spreads around the semiconductor element 3 and crawls up the end face of the semiconductor element 3. Reference numeral 7 denotes a cured ACF (cured resin adhesive) which has been cured thereafter. is there. 7a is an upper surface (upper surface) of the cured ACF 7.
[0022]
Next, a method for manufacturing the semiconductor device 1 will be described.
First, the ACF 5 is arranged on the wiring board 2 (FIG. 2A). The thickness of the ACF 5 is set to be at least 20 μm thicker than the sum of the thicknesses of the electrode 2a on the substrate side and the electrode 3a on the element side so that the space between the wiring substrate 2 and the semiconductor element 3 can be sufficiently filled. Have been.
Next, the semiconductor element 3 is sucked by a device or an instrument (not shown) through the suction hole 4b of the holder 4 with the element-side electrode 3a facing downward, and is fixed to the holder 4 in close contact (FIG. 2 (b) upper view).
[0023]
Next, the semiconductor element 3 heated by, for example, a ceramic heater or the like is pressed against the wiring board 2 through the holder 4 (FIG. 2B → FIG. 2C). At this time, due to the pressing of the semiconductor element 3 and the heat from the semiconductor element 3, the ACF 5 flows, protrudes and spreads around the semiconductor element 3, and becomes the ACF 6 crawling up the end face of the semiconductor element 3. Then, the conductive particles 5a existing in the gap between the electrode 2a on the substrate side and the electrode 3a on the element side are crushed by the above-mentioned pressing, whereby the electrical connection between the wiring substrate 2 and the semiconductor element 3 is achieved. (FIG. 2C).
[0024]
Thereafter, the suction is stopped, and the holder 4 is released. The ACF does not adhere to the holder 4 due to the release material layer 4c. At this time, the ACF 6 crawling up the end face of the semiconductor element 3 has been completely cured, and a cured ACF 7 is formed. The cured ACF 7 covers the side surface 3d of the semiconductor element 3, and the upper surface 7a of the cured ACF 7 is formed at the same height as the rear surface 3c of the semiconductor element 3 (FIG. 2D). The periphery of the element 3 can be fixed, and the mechanical strength can be increased.
[0025]
As described above, according to the semiconductor device 1 of the first embodiment of the present invention, the cured upper surface 7a of the ACF 7 is formed around the semiconductor element 3 at the same height as the rear surface 3c of the semiconductor element 3. Therefore, an effect is obtained that the thickness of the semiconductor device can be reduced while maintaining the mechanical strength of the semiconductor element 3.
According to the holder 4 of the first embodiment, the main body 4a has a wider width than the semiconductor element 3, and the ACF does not adhere to the surface of the holder 4 that is in contact with the semiconductor element 3. Since the ACF is covered with the release material layer 4c made of a material, the ACF can be shaped so as to cover the side surface 3d of the semiconductor element 3 and have the upper surface thereof at the same height as the rear surface 3c of the semiconductor element 3. The effect is obtained.
[0026]
Next, three modified examples of the first embodiment will be described.
FIG. 3 is a schematic cross-sectional view showing a configuration of a semiconductor device 11 according to a first modification of the first embodiment, and shows a cross section of a portion similar to FIG. The hatching indicating the cross section is partially omitted. In the figure, reference numeral 11 denotes a semiconductor device. 17 is a cured resin adhesive. As the resin adhesive 17, for example, an epoxy-based, acrylic-based, or phenol-based resin is used. 17a is the upper surface of the cured resin adhesive. The semiconductor device 11 is an example in which a semiconductor device is configured using a resin adhesive having no conductive particles instead of the ACF, and the wiring board is formed by directly contacting the substrate-side electrode 2a and the element-side electrode 3a. 2 and the semiconductor element 3 are electrically connected. The other parts are the same as those of the semiconductor device 1, and thus the detailed description is omitted.
[0027]
FIG. 4 is a schematic cross-sectional view showing a configuration of a semiconductor device 21 according to a second modification of the first embodiment, and shows a cross section of a portion similar to FIG. The hatching indicating the cross section is partially omitted. In the figure, reference numeral 13 denotes a semiconductor element. Reference numeral 13a denotes a protruding electrode made of solder on the semiconductor element 13 side. 13b is the front surface of the semiconductor device, 13c is the back surface of the semiconductor device, and 13d is the side surface of the semiconductor device. 21 is a semiconductor device. The semiconductor device 21 is an example in which, similar to the semiconductor device 11, a semiconductor device is configured using a resin adhesive having no conductive particles in place of the ACF. The semiconductor device 21 includes a substrate-side electrode 2a and a protruding electrode 13a made of solder. Then, the semiconductor element 13 is heated to melt the solder, so that the wiring board 2 and the semiconductor element 13 are electrically connected. The other parts are the same as those of the semiconductor devices 1 and 11, and thus the detailed description is omitted.
[0028]
FIG. 5 is a schematic cross-sectional view showing a configuration of a semiconductor device 31 according to a third modification of the first embodiment, showing a cross section of a portion including electrodes. The hatching indicating the cross section is omitted except for a part. The semiconductor device 31 is an example in which two semiconductor elements are mounted to form a semiconductor device.
[0029]
In the figure, reference numeral 2b denotes a substrate-side second electrode provided on the wiring substrate 2 and electrically connected to a second semiconductor element 8 described later. Reference numeral 8 denotes a second semiconductor element which is adhered on the semiconductor element 3 via an adhesive layer 9 described later. Although the second semiconductor element 8 is wider than the semiconductor element 3, the hardened ACF 7 in the portion protruding around the semiconductor element 3 is aligned at the same height as the back surface of the semiconductor element 3, It is installed on element 3 in a stable state. Reference numeral 8a denotes a second element-side electrode provided on the second semiconductor element 8. Reference numeral 8b is a wire that is connected to the second electrode 2b on the substrate side and the electrode 8a on the second element side, and performs electrical connection between the wiring substrate 2 and the second semiconductor element 8.
Reference numeral 9 denotes an adhesive layer for adhering the semiconductor element 3 and the second semiconductor element 8. Reference numeral 10 denotes a mold resin provided so as to cover the periphery of the components mounted on the wiring board 2 so as not to damage the wires 8b. Detailed description of the components already described is omitted.
[0030]
Embodiment 2 FIG.
FIG. 6 is a schematic explanatory view showing a configuration of a holder 14 according to Embodiment 2 of the present invention. FIG. 6A shows a concave portion 14b of a main body portion 14a and a release material portion 14d embedded therein. FIG. 6B is a cross-sectional view taken along a portion passing through a suction hole 14 c, and FIG. 6C is a diagram illustrating a state where the semiconductor element 3 is suctioned and fixed to the holder 14. It is sectional drawing which shows the state at the time of doing. The hatching indicating the cross section is omitted except for a part.
[0031]
In the figure, reference numeral 3e denotes an edge portion on the back surface of the semiconductor element 3. Reference numeral 14 denotes a holder (semiconductor element mounting holder) used to fix the semiconductor element 3 when mounting the semiconductor element 3 on a wiring board on which a resin adhesive is previously arranged. 14a is a main body of the holder 4. The vertical and horizontal width of the main body portion 14a is wider than the vertical and horizontal width of the semiconductor element 3. Specifically, when the semiconductor element 3 is mounted on a wiring board via a resin adhesive such as an ACF, the resin adhesive protruding from the outside of the semiconductor element 3 is formed on the lower side of the holder 14. The upper surface of the resin adhesive which is in contact with the surface and protrudes from the surface is made wide enough to achieve the same height as the rear surface 3 c of the semiconductor element 3. The main body 14a is formed using a metal such as brass or aluminum, which is generally known as a material having good thermal conductivity, or a ceramic material such as aluminum nitride, boron nitride, or silicon nitride. Since the heating of the semiconductor element 3 is performed through the holder 14, the above-mentioned material having good thermal conductivity is preferably a material which is less likely to be deformed by heat.
[0032]
Reference numeral 14b denotes a concave portion provided in a range outside a portion facing the edge portion 3e of the back surface 3c of the semiconductor element 3. Reference numeral 14c denotes a suction hole (a suction hole) provided through the center of the main body 14a. 14d is a mold release member buried in the recess 14b. Since the release part 14d is in contact with the edge 3e on the back surface of the semiconductor element 3, a material that does not adhere to the resin adhesive such as ACF that protrudes around the semiconductor element 3 when the semiconductor element 3 is pressed against the wiring board. Used. For example, a fluororesin or a polyimide resin is suitable.
[0033]
The holder 14 is manufactured, for example, as follows.
First, a ceramic material having good thermal conductivity such as aluminum nitride is processed into a shape of the main body 14a. Next, a fluorine-based resin or the like dissolved in a solvent is applied to the recess 14b by a suitable method such as spraying to form a release material layer 14d. Next, the whole is baked at a temperature of about 380 ° C., and the extra-adhered material is removed by grinding, thereby finishing the holder 14 having an accurate desired size.
[0034]
As described above, according to the holder 14 of the second embodiment, the portion having a wider width than the semiconductor element 3 to be fixed, and the edge portion 3e of the back surface of the semiconductor element 3 contacting the release member Since it is constituted by the portion 14d, the same effect as the holder 4 of the first embodiment can be obtained.
[0035]
Embodiment 3 FIG.
FIG. 7 is a schematic sectional view showing the structure of the holder 24 according to the third embodiment of the present invention. FIG. 6 is a sectional view showing a state where the semiconductor element 3 is sucked and fixed to the holder 24. It is shown in a cross section of the same part as. The hatching indicating the cross section is partially omitted.
[0036]
In the figure, reference numeral 24 denotes a holder (semiconductor element mounting holder) used to fix the semiconductor element 3 when the semiconductor element 3 is mounted on a wiring board on which a resin adhesive is previously arranged. Reference numeral 24a denotes a main body of the holder 24. The vertical and horizontal widths of the main body 24a are wider than the vertical and horizontal widths of the semiconductor element 3. Specifically, when the semiconductor element 3 is mounted on a wiring board via a resin adhesive such as an ACF, the resin adhesive protruding outside the semiconductor element 3 is formed on the lower side of the holder 24. The upper surface of the resin adhesive which is in contact with the surface and protrudes from the surface is made wide enough to achieve the same height as the rear surface 3 c of the semiconductor element 3. The main body 24a is formed using a metal such as brass or aluminum, which is generally known as a material having good thermal conductivity, or a ceramic material such as aluminum nitride, boron nitride, or silicon nitride. Since the semiconductor element 3 is heated through the holder 24, the above-mentioned material having good thermal conductivity is preferably a material which is less likely to be deformed by heat.
[0037]
Reference numeral 24b denotes a concave portion provided in a range outside a portion facing the edge portion 3e on the back surface of the semiconductor element 3. Reference numeral 24c denotes a suction hole (a suction hole) provided through the center of the main body 14a. Reference numeral 24d denotes a release material portion embedded in the concave portion 24b, and is impregnated with a fluorine-based resin 24e described later. Since the release material portion 24d is in contact with the edge portion 3e on the back surface of the semiconductor element 3, a material that does not adhere to the resin adhesive such as ACF that protrudes around the semiconductor element 3 when the semiconductor element 3 is pressed against the wiring board. Used.
[0038]
Reference numeral 24e schematically shows the fluorine-based resin contained in the release material portion 24d. Since the release material portion 24d impregnated with the fluorine-based resin 24e eliminates the wear of the fluorine-based resin and increases in hardness as compared with the case where only the fluorine-based resin is used, the semiconductor element 3 is mounted on the wiring board 2. At this time, an effect of being able to strongly press is obtained.
[0039]
The holder 24 is manufactured, for example, as follows.
First, a ceramic material having good thermal conductivity such as aluminum nitride is processed into the shape of the main body 24a. Next, a material dissolved in a solvent, for example, a material obtained by mixing aluminum nitride powder in a fluorine-based resin is applied to the concave portion 24b by a suitable method such as spraying to form a release material layer 24d. Next, the whole is baked at a temperature of about 380 ° C., and the extra-adhered material is removed by grinding, thereby finishing the holder 24 having an accurate desired size.
[0040]
As described above, according to the holder 24 of the third embodiment, the portion having a wider width than the semiconductor element 3 to be fixed, and the edge portion 3e of the back surface of the semiconductor element 3 contacting the release member Since it is constituted by the portion 24d, the same effects as those of the holder 4 of the first embodiment can be obtained.
[0041]
【The invention's effect】
As described above, according to the present invention, the semiconductor device is configured such that the cured resin adhesive covers the side surface of the semiconductor element and the upper surface thereof is flush with the back surface of the semiconductor element. Thus, there is an effect that a semiconductor device capable of realizing a reduction in thickness can be obtained while maintaining the mechanical strength of the semiconductor device.
[0042]
According to the present invention, the main body having a width wider than the semiconductor element, the suction hole penetrating through the center of the main body, and the surface of the main body on the side in contact with the semiconductor element are covered. Since the semiconductor element mounting holder is configured to have a release material layer made of a material to which the resin adhesive does not adhere, the shape of the resin adhesive covers the side surface of the semiconductor element, and the upper surface thereof is the back surface of the semiconductor element. There is an effect that a holder for mounting a semiconductor element can be obtained which can be formed in the same shape as the height.
[0043]
According to the present invention, a main body having a width wider than the semiconductor element, and having a concave portion in a range outside a portion of the surface on the side mounted on the semiconductor element facing the edge portion of the back surface of the semiconductor element, A semiconductor element mounting holder is configured to include a suction hole penetrating through a central portion of the main body and a release material portion embedded in the concave portion and made of a material to which a resin adhesive does not adhere. Therefore, there is an effect that a holder for mounting a semiconductor element can be obtained in which the shape of the resin adhesive covers the side surface of the semiconductor element, and the upper surface thereof can be formed to have the same height as the rear surface of the semiconductor element. .
[Brief description of the drawings]
FIG. 1 is a schematic sectional view showing a configuration of a semiconductor device according to a first embodiment of the present invention.
FIG. 2 is a cross-sectional view showing step by step the manufacturing process of the semiconductor device according to the first embodiment of the present invention;
FIG. 3 is a schematic sectional view showing a configuration of a semiconductor device according to a first modification of the first embodiment of the present invention;
FIG. 4 is a schematic sectional view showing a configuration of a semiconductor device according to a second modification of the first embodiment of the present invention;
FIG. 5 is a schematic sectional view showing a configuration of a semiconductor device according to a third modification of the first embodiment of the present invention;
FIG. 6 is a schematic sectional view showing a configuration of a holder according to a second embodiment of the present invention.
FIG. 7 is a schematic sectional view showing a configuration of a holder according to a third embodiment of the present invention.
FIG. 8 is a cross-sectional view showing stepwise steps of manufacturing a conventional semiconductor device.
FIG. 9 is a schematic sectional view showing a configuration of a conventional semiconductor device.
[Explanation of symbols]
1, 11, 21, 31 Semiconductor device, 2 Wiring board, 2a Substrate side electrode (first electrode), 2b Substrate side second electrode, 3, 13 Semiconductor element, 3a Element side electrode (second electrode) Electrodes), 3b, 13b Front surface (front surface) of semiconductor element, 3c, 13c Back surface of semiconductor element, 3d, 13d Side surface of semiconductor element, 3e Edge portion of back surface (edge portion of back surface of semiconductor element), 4, 14, 24 Holder (semiconductor element mounting holder), 4a, 14a, 24a Main body, 4b Suction hole (suction hole), 4c Release layer, 5 ACF (resin adhesive), 5a Conductive particles, 6 ACF, 7 cured ACF (cured resin adhesive), 7a upper surface of cured ACF (upper surface), 8 second semiconductor element, 8a second element side electrode, 8b wire, 9 resin adhesive layer, 10 molding resin , 13a Protrusion by solder Shaped electrodes, 14b, 24b recessed portions, 14c, 24c suction holes (holes for suction), 14d, 24d release material portion, 17 cured resin adhesive, 17a upper surface of cured resin adhesive, 24e fluororesin.

Claims (5)

第一の電極を表面に備えた配線基板と、第二の電極を表面に備えた半導体素子とを有し、上記第一の電極と上記第二の電極とが対向した状態で上記配線基板と上記半導体素子との電気的接続がなされ、かつ上記配線基板と上記半導体素子との間隙に硬化した樹脂接着剤が充填されている半導体装置において、
上記硬化した樹脂接着剤は、上記半導体素子の側面を覆い、かつその上面は上記半導体素子の裏面と同じ高さに揃っていることを特徴とする半導体装置。A wiring substrate having a first electrode on the surface, and a semiconductor element having a second electrode on the surface, the wiring substrate in a state where the first electrode and the second electrode face each other In a semiconductor device which is electrically connected to the semiconductor element and in which a cured resin adhesive is filled in a gap between the wiring substrate and the semiconductor element,
A semiconductor device, wherein the cured resin adhesive covers a side surface of the semiconductor element, and an upper surface thereof is flush with a rear surface of the semiconductor element. 第一の電極を表面に備えた配線基板に、第二の電極を表面に備えた半導体素子を、上記第一の電極と上記第二の電極とが対向するように、樹脂接着剤を介して搭載する際に用いられる、上記半導体素子を吸引して固定する半導体素子搭載用保持具において、
上記半導体素子よりも広い幅を有する本体部と、該本体部の中心部分に貫通して設けられた吸引用の穴と、上記本体部の上記半導体素子に当接する側の面を覆う上記樹脂接着剤が付着しない材料からなる離型材層とを備えたことを特徴とする半導体素子搭載用保持具。On a wiring board provided with a first electrode on the surface, a semiconductor element provided with a second electrode on the surface, such that the first electrode and the second electrode face each other, via a resin adhesive. Used in mounting, in the semiconductor element mounting holder for sucking and fixing the semiconductor element,
A main body having a width wider than that of the semiconductor element, a suction hole penetrating through the center of the main body, and the resin adhesive covering a surface of the main body on a side in contact with the semiconductor element; And a release material layer made of a material to which the agent does not adhere. 第一の電極を表面に備えた配線基板に、第二の電極を表面に備えた半導体素子を、上記第一の電極と上記第二の電極とが対向するように、樹脂接着剤を介して搭載する際に用いられる、上記半導体素子を吸引して固定する半導体素子搭載用保持具において、
上記半導体素子よりも広い幅を有し、かつ上記半導体素子に当接する側の面の、上記半導体素子の裏面の縁部分に対向する部分から外側の範囲に凹部を有する本体部と、該本体部の中心部分に貫通して設けられた吸引用の穴と、上記凹部に埋設された上記樹脂接着剤が付着しない材料からなる離型材部とを備えたことを特徴とする半導体素子搭載用保持具。On a wiring board provided with a first electrode on the surface, a semiconductor element provided with a second electrode on the surface, such that the first electrode and the second electrode face each other, via a resin adhesive. Used in mounting, in the semiconductor element mounting holder for sucking and fixing the semiconductor element,
A body having a width wider than that of the semiconductor element and having a recess in a range outside a portion of the surface on the side in contact with the semiconductor element facing an edge portion of the back surface of the semiconductor element; Characterized by comprising a suction hole penetrating through a central portion of the substrate, and a release material portion made of a material which does not adhere to the resin adhesive embedded in the concave portion. . 本体部はセラミック材料からなり、離型材部はフッ素系樹脂またはポリイミド系樹脂からなることを特徴とする請求項３記載の半導体素子搭載用保持具。4. The holder for mounting a semiconductor element according to claim 3, wherein the main body is made of a ceramic material, and the release material is made of a fluorine-based resin or a polyimide-based resin. 本体部はセラミック材料からなり、離型材部はフッ素系樹脂を含浸させたセラミック材料からなることを特徴とする請求項３記載の半導体素子搭載用保持具。4. The holder for mounting a semiconductor element according to claim 3, wherein the main body is made of a ceramic material, and the release material is made of a ceramic material impregnated with a fluorine-based resin.
JP2002186631A 2002-06-26 2002-06-26 Semiconductor device, and holder for mounting semiconductor element Pending JP2004031678A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011054867A (en) * 2009-09-04 2011-03-17 Lintec Corp Structure for connecting ic chip, and ic inlet and ic tag
US7936233B2 (en) 2005-07-18 2011-05-03 Centre National de la Recherche Scientifique - CRNS Coaxial automatic impedance adaptor
JP2012168708A (en) * 2011-02-14 2012-09-06 Lintec Corp Ic tag

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7936233B2 (en) 2005-07-18 2011-05-03 Centre National de la Recherche Scientifique - CRNS Coaxial automatic impedance adaptor
JP2011054867A (en) * 2009-09-04 2011-03-17 Lintec Corp Structure for connecting ic chip, and ic inlet and ic tag
JP2012168708A (en) * 2011-02-14 2012-09-06 Lintec Corp Ic tag

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