JP2004031455A - Optical interconnection equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide optical interconnection equipment, which can further be miniaturized and can cope with a change of a circuit easily and the production cost of which can be reduced. <P>SOLUTION: A face-emission semiconductor laser 21 and a driver IC 22 are three-dimensionally arranged with a sub-mount substrate 20a in between, and an LSI 23 for a CPU or the like is loaded on the driver IC 22. The face-emission semiconductor laser 21 is formed by an epitaxial lift-off (ELO) process, and is approximately 10 μm thick. Through holes are formed on the sub-mount substrate 20a, the face-emission semiconductor laser 21, the driver IC 22 and the LSI 23 respectively, and these parts are connected electrically through conductors in the through holes. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an optical interconnection device mounted inside a computer such as a server and a client and a device such as a router and used as an interface between an LSI such as a CPU and a memory and an opto-electric hybrid board.
[0002]
[Prior art]
With the development of information and communication technology and information processing technology, the density of electric wiring connecting electronic circuits in devices such as computers and large-capacity exchanges has been increasing, which has become a factor that hinders the increase in scale and performance of systems. Was. In addition, the remarkable development of LSI in recent years has resulted in a higher density of input / output terminals of the LSI and a higher density of electric wiring inside the LSI, which has become a bottleneck for performance improvement. In order to solve such a problem, attention has been paid to an optical interconnection technology for connecting electronic circuits with light.
[0003]
An optical interconnection device generally drives a light emitting element such as a surface emitting semiconductor laser (VCSEL: Vertical Cavity Surface Emitting Laser), a driver IC for driving the light emitting element, a light receiving element such as a photodiode, and the light receiving element. Components such as a receiver IC (hereinafter referred to as an interconnection module) are two-dimensionally arranged on a submount substrate. In many cases, an LSI on which a CPU circuit or a memory circuit is formed together with these interconnection modules is mounted on a submount substrate.
[0004]
[Problems to be solved by the invention]
However, the conventional optical interconnection device has a drawback that since each interconnection module is two-dimensionally arranged, the mounting area is large, and miniaturization is difficult. In addition, since the wiring length of the electric wiring connecting between the interconnection modules becomes long, there is a problem that high-speed operation is hindered and the S / N ratio is deteriorated due to crosstalk noise.
[0005]
An optical interconnection device in which a silicon substrate is used as a submount substrate, a driver circuit, a receiver circuit, a CPU circuit, and the like are formed on the silicon substrate, and a light emitting element and a light receiving element are mounted on the silicon substrate has been developed. However, in this type of optical interconnection device, since the driver circuit, the receiver circuit, the CPU circuit, and the like are monolithically integrated, it is difficult to change the circuit, and the versatility is low.
[0006]
In order to reduce the size of the optical interconnection device, it is conceivable to arrange each interconnection module three-dimensionally (3D). For example, an optical element (light emitting element or light receiving element) is mounted under the submount substrate, and a driver IC or a receiver IC is mounted on the submount substrate. However, when the interconnection modules are three-dimensionally arranged, it becomes impossible to electrically connect the interconnection modules.
[0007]
Also, for example, in a surface emitting semiconductor laser, electrodes are provided on a light emitting side and a surface opposite to the light emitting side, so that the electrode on one side can be directly connected to the submount substrate, while the electrode on the other side is a wire. It is necessary to connect to the submount substrate by a method such as bonding. For this reason, there is also a problem that the mounting process is complicated.
[0008]
Further, in the conventional optical interconnection device, since a relatively expensive substrate such as a ceramic substrate or a silicon PLC (Planar Lightwave Circuit) substrate is used as a submount substrate, there is a disadvantage that the product cost is increased.
[0009]
In view of the above, it is an object of the present invention to provide an optical interconnection device that can be further miniaturized, can easily cope with circuit changes, and can reduce product cost.
[0010]
[Means for Solving the Problems]
The optical interconnection device of the present invention includes an optical element module formed by an epitaxial lift-off (hereinafter, referred to as ELO) process, and an optical element driving module for driving the optical element module. Each of the element driving modules has a through hole penetrating from one surface to the other surface, and is electrically connected to the element driving module via a conductor in the through hole.
[0011]
In the present invention, both the optical element module and the optical element driving module are provided with through holes. The optical element module and the optical element drive module are electrically connected via a conductor in the through hole. Therefore, the optical element module and the optical element drive module can be driven in a three-dimensional arrangement. As a result, the size of the optical interconnection device can be further reduced.
[0012]
Further, in the present invention, since wiring is performed between the modules via the conductor in the through-hole, the wiring length is short and the characteristics such as the S / N ratio are good.
[0013]
Further, by modularizing each function, it is possible to easily cope with a change in the circuit. Furthermore, a normal printed wiring board or a flexible board can be used as the sub-mount board, and the sub-mount board can be omitted, so that the product cost can be reduced as compared with the related art.
[0014]
Further, since the optical element module is formed by the ELO process, the thickness can be extremely reduced. Therefore, for example, when the optical element driving module is joined to the main board by solder bumps, the optical element module can be mounted on the surface of the optical element driving module on the main board side. Thereby, the interval between the optical element module and the waveguide becomes extremely short, and the optical coupling efficiency increases. Further, since the optical element module can be formed extremely small in the ELO process, it is possible to mount a plurality of optical element modules on one optical element driving module, and it is easy to perform WDM (Wavelength Division Multiplexing). It is possible to correspond to.
[0015]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
[0016]
(First Embodiment)
FIG. 1 is a schematic diagram showing an example of the optical connection device according to the first embodiment of the present invention.
[0017]
On the opto-electric hybrid board (main board) 10, an optical waveguide 11 and electric wiring (not shown) are formed in a predetermined pattern. In the present embodiment, as the opto-electric hybrid board 10, a glass epoxy printed wiring board to which a sheet-shaped optical waveguide formed of a polymer material is adhered is used. However, the main board in the present invention is not limited to this.
[0018]
A mirror 11 a is provided at a predetermined position of the optical waveguide 11, and guides light emitted from a surface emitting semiconductor laser 21 described later to the optical waveguide 11, and transmits light passing through the optical waveguide 11 to a photodiode 24 described later. It is designed to reflect toward.
[0019]
Submount substrates 20a and 20b are mounted on the opto-electric hybrid board 10 by solder bumps 12. In the present embodiment, the submount substrates 20a and 20b are rigid substrates or flexible substrates formed of, for example, an organic polymer.
[0020]
A surface emitting semiconductor laser 21 having a thickness of about 10 μm formed by an ELO process is mounted under the submount substrate 20a. Light emitted from the surface emitting semiconductor laser 21 is reflected by the mirror 11 a and guided into the optical waveguide 11.
[0021]
A driver IC 22 on which a circuit for driving the surface emitting semiconductor laser 21 is formed is mounted on the submount substrate 20a, and an LSI 23 on which a circuit such as a CPU or a memory is formed is mounted on the driver IC 22. Have been.
[0022]
These submount substrate 20a, surface emitting semiconductor laser 21, driver IC 22, and LSI 23 are all provided with electrodes on the upper and lower surfaces. The submount substrate 20a, the surface emitting semiconductor laser 21, the driver IC 22, and the LSI 23 are provided with through holes (shown by broken lines in FIG. 1) penetrating from the upper surface to the lower surface. The electrode is electrically connected to a predetermined one of the electrodes on the other surface via a conductor in the through hole.
[0023]
That is, in the present embodiment, the electrical connection between the surface emitting semiconductor laser 21, the driver IC 22, and the LSI 23, and between these components and the submount substrate 20a are provided on each component and the submount substrate 20a. Through the conductor in the through hole.
[0024]
The electric wiring of the sub-mount substrate 20a is connected to the electric wiring of the opto-electric hybrid board 10 via the solder bumps 12, and the electric power to the surface emitting semiconductor laser 21, the driver IC 22, and the LSI 23 via these electric wirings. Supply and input / output of electric signals.
[0025]
Similarly, a photodiode 24 having a thickness of about 10 μm formed by an ELO process is mounted under the submount substrate 20b, and a circuit for driving the photodiode 24 is formed on the submount substrate 20b. Receiver IC 25 is mounted. On the receiver IC 25, an LSI 26 in which a circuit such as a CPU or a memory is formed is mounted.
[0026]
The submount substrate 20b, the photodiode 24, the receiver IC 25, and the LSI 26 are all provided with electrodes on the upper and lower surfaces. The sub-mount substrate 20b, the photodiode 24, the receiver IC 25, and the LSI 26 are provided with through-holes penetrating from the upper surface to the lower surface, and the electrode on one surface side is provided through a conductor in the through-hole. It is electrically connected to a predetermined electrode on the other surface.
[0027]
The electric wiring of the sub-mount substrate 20b is connected to the electric wiring of the opto-electric hybrid board 10 via the solder bumps 12, and power is supplied to the photodiode 24, the receiver IC 25, and the LSI 26 through these electric wirings. And input and output of electrical signals.
[0028]
FIG. 2 is a schematic sectional view of the surface emitting semiconductor laser 21. In the surface-emitting semiconductor laser 21, an anode electrode 31 is provided on a surface on the light emission side, and a cathode electrode 32 is provided on the back surface side. In the present embodiment, the anode electrode 31 provided on the light emitting side surface is electrically connected to the back side electrode 33 via the conductive film 35 in the through hole 30.
[0029]
The through holes 30 are formed by, for example, a reactive ion etching (RIE) method. Thereafter, an insulating film 34 is formed on the wall surface of the through hole 30 by a CVD method or the like, and a conductive film such as Pt (platinum) or Au (gold) is formed on the insulating film 34 by a sputtering method or a CVD method. 35 is formed.
[0030]
FIG. 3 is a schematic sectional view of the photodiode 24. In the photodiode 24, an anode electrode 41 and a cathode electrode 42 are provided on the light receiving surface side. These electrodes 41 and 42 are electrically connected to the electrodes 45 and 46 on the back side via the conductor film 44 in the through hole 40. Note that an insulating film 43 is formed between the wall surface of the through hole 40 and the conductor film 44.
[0031]
FIG. 4 is a schematic sectional view of the driver IC 22. The driver IC 22 also has a through hole 50 penetrating from one surface to the other surface. The through holes 50 are formed by, for example, reactive ion etching. Then, after an insulating film 51 and a conductor film 52 covering the inner wall surface of the through hole 50 are sequentially formed, an electrode 53 is formed on one surface side, and an electrode 55 is formed on the other surface side. Although only one through-hole is shown in FIG. 4 in the driver IC 22, actually, as many through-holes as necessary for power supply and signal transmission are provided.
[0032]
The receiver IC 25 and the LSIs 23 and 26 also have a plurality of through holes as in the driver IC 22. 2 to 4, the insides of the through holes 30, 40, and 50 are hollow, but a conductor may be embedded in the through holes after forming an insulating film on the inner wall surface of the through holes.
[0033]
In the present embodiment, the surface emitting semiconductor laser 21 and the photodiode 24 are formed by an ELO process, and are mounted on the sub-mount substrates 20a and 20b. Hereinafter, the ELO process will be described (IEEE Photon Lett., 1991, 3, (12). Pp. 1123-1126).
[0034]
5 to 7 are schematic diagrams showing the outline of the ELO process. First, as shown in FIG. 5A, for example, an Al _x Ga _1-x An etching stop layer 62 made of As (where 0.3 ≦ x ≦ 1) is formed. Then, a surface emitting semiconductor laser (element) 64 having a GaAs / AlAs multilayer film structure is formed on the etching stop layer 62 by using an electron beam growth method (MBE) or a metal organic chemical vapor deposition method (MOCVD). In this case, the structure is such that the laser light is emitted to the lower side of the substrate 61.
[0035]
Next, as shown in FIG. 5B, the respective elements 64 are separated by a reactive ion etching method. At this time, in this embodiment, a through hole reaching the etching stop layer 62 from the surface of the element 64 is formed. Then, an insulating film and a conductor film that cover the wall surfaces of the through holes are formed by a CVD method or a sputtering method (see FIG. 2).
[0036]
Next, as shown in FIG. 5C, a predetermined electrode 65 is formed on the upper surface of the element 64.
[0037]
Next, the element 64 is covered with a wax 66 as shown in FIG. Then, using a chlorine-based gas, the semiconductor substrate 61 is etched from the back side to the etching stop layer 62 as shown in FIG. Further, the reactive ion etching is continued while changing the gas type, and the etching stop layer 61 is removed. After that, an electrode is formed on the back surface side of the element 64.
[0038]
Next, as shown in FIG. 6C, the element 64 is transferred to a diaphragm 67 formed using, for example, a semiconductor. After that, the wax 66 is removed.
[0039]
Next, as shown in FIG. 7, a desired optical element 64 is pushed out from the back side of the diaphragm 67 with a pin, and the optical element is mounted on the submount substrate 68.
[0040]
The optical element formed by the ELO process in this manner has a thickness of about 10 μm, and can be extremely thin as compared with a conventional general optical element (thickness of about 100 μm).
[0041]
In the above example, in the step of FIG. 5B, the element 64 is configured so that light is emitted to the lower side of the substrate 61. However, the light is emitted to the upper side of the substrate 61. In such a case, the direction of the element 64 may be reversed by performing two wax steps.
[0042]
In the present embodiment, the surface emitting semiconductor laser 21, the submount substrates 20a and 20b, the driver IC 22, the photodiode 24, the receiver IC 25, and the LSIs 23 and 26 which constitute the optical interconnection device all have through holes. Since the components are electrically connected via the conductor in the through-hole, the components can be three-dimensionally arranged and driven. Thus, the size of the optical interconnection device can be reduced as compared with the related art.
[0043]
Further, in the present embodiment, the step of connecting the interconnection module and the sub-mount substrates 20a and 20b by wire bonding or the like is unnecessary, and the assembly is easy.
[0044]
Furthermore, in the present embodiment, since each component is connected via the conductor in the through hole, the wiring length is reduced. As a result, higher-speed operation can be performed as compared with the related art, and characteristics such as the S / N ratio are improved. Furthermore, in the present embodiment, since each function is an individual module, it is possible to easily cope with a change in the circuit and to improve the reliability of the product.
[0045]
In addition, in the present embodiment, a ceramic substrate, a silicon PLC substrate, and the like are not required, so that product cost can be reduced.
[0046]
In the above embodiment, the case where the surface emitting semiconductor laser 21 and the driver IC 22 are arranged with the sub-mount substrate 20a interposed therebetween, and the photodiode 24 and the receiver IC 25 are arranged with the sub-mount substrate 20b interposed therebetween has been described. However, as shown in FIG. 8, a sub-mount substrate 20a on which a driver IC 22 and a surface-emitting semiconductor laser 21 are superposed and mounted, and a receiver IC 25 and a photodiode 24 are mounted on a substrate 15 on which electric wiring is formed. The submount substrate 20b may be mounted. However, in the example shown in FIG. 8, it is necessary to prepare a substrate 17 provided with a waveguide 17a separately from the substrate 15. In the case of the optical interconnection device shown in FIG. 8, an LSI (not shown) such as a CPU and a memory is mounted on the substrate 15, and electrically connected to the driver IC 22 and the receiver IC 25 via the solder bumps 12a. Connected.
[0047]
(Second embodiment)
FIG. 9 is a schematic view showing an optical interconnection device according to a second embodiment of the present invention, and FIG. 10 is an enlarged view of a portion indicated by a circle in FIG.
[0048]
On the opto-electric hybrid board 70, an optical waveguide 71 and electric wiring (not shown) are formed in a predetermined pattern. A mirror 71 a is provided at a predetermined position of the optical waveguide 71, and guides light emitted from the surface emitting semiconductor laser 81 to the optical waveguide 71 and reflects light passing through the optical waveguide 71 toward the photodiode 83. It has become.
[0049]
In the present embodiment, the surface emitting semiconductor laser 81 and the photodiode 83 are directly bonded on the opto-electric hybrid board 70 by solder bumps. That is, as shown in FIG. 10, an electrode 70a for connecting the surface emitting semiconductor laser 81 and the photodiode 83 is provided on the photoelectric hybrid substrate 70, and the electrode 70a is provided on the surface emitting semiconductor laser 81 and the photodiode 83. Electrode 80a and the solder bump 73. When there is a step on the light emitting side surface of the surface emitting semiconductor laser 81, it is preferable to eliminate the step by using polyimide or the like.
[0050]
A driver IC 82 is mounted on the surface emitting semiconductor laser 81, and a receiver IC 84 is mounted on the photodiode 83. These surface emitting semiconductor laser 81, driver IC 82, photodiode 83, and receiver IC 84 are all provided with through holes (shown by broken lines in FIG. 9). The electrical wiring of the opto-electric hybrid board 70 and the electrodes of the surface emitting semiconductor laser 81, the driver IC 82, the photodiode 83, and the receiver IC 84 are electrically connected via the conductors in these through holes.
[0051]
In the present embodiment, LSIs (not shown) such as a CPU and a memory are mounted on the opto-electric hybrid board 70, and the electric wiring of the opto-electric hybrid board 70 and the penetration of the surface emitting semiconductor laser 81 and the photodiode 83 are provided. It is connected to the driver IC 82 and the receiver IC 84 via the hole.
[0052]
In the present embodiment, each optical connection module is arranged three-dimensionally on the opto-electric hybrid board 70 without using a sub-mount board, so that an optical waveguide 71 is provided as compared with the first embodiment. The alignment between the semiconductor laser 81 and the surface emitting semiconductor laser 81 and the photodiode 83 is performed in a self-alignment manner, and there is an advantage that the alignment process can be reduced. That is, as shown in FIG. 11, when the electrode 70a of the opto-electric hybrid board 70 and the electrode 80a of the surface emitting semiconductor laser 81 (or the photodiode 83) are joined by the solder bump 73, the opto-electric hybrid board 70 is On the other hand, even if the position of the surface emitting semiconductor laser 81 (or the photodiode 83) is slightly shifted, the position of the surface emitting semiconductor laser 81 (or the photodiode 83) is automatically set to a predetermined position due to the surface tension of the solder bump 73. Will be modified. Thus, the step of adjusting the alignment between the surface emitting semiconductor laser 81 and the photodiode 83 and the optical waveguide becomes unnecessary, and the manufacturing cost is reduced.
[0053]
Further, in the present embodiment, since no submount substrate is required, the cost can be further reduced as compared with the first embodiment.
[0054]
In this embodiment, the case where an LSI such as a CPU or a memory is mounted on the opto-electric hybrid board 70 has been described. However, as in the first embodiment, the CPU is mounted on the driver IC 82 and the receiver IC 84. Alternatively, an LSI in which a circuit such as a memory is formed may be mounted.
[0055]
(Third embodiment)
FIG. 12 is a schematic diagram showing the configuration of the optical interconnection device according to the third embodiment of the present invention.
[0056]
In the present embodiment, the driver IC 92 is joined on the opto-electric hybrid board 70 by the solder bump 73. On the lower surface side of the driver IC 92, a surface emitting semiconductor laser 91 having a thickness of about 10 μm formed by an ELO process is mounted.
[0057]
Similarly, the receiver IC 94 is joined on the opto-electric hybrid board 70 by the solder bump 73. A photodiode 93 having a thickness of about 10 μm formed by an ELO process is mounted on the lower surface side of the receiver IC 94.
[0058]
The distance between the opto-electric hybrid board 70 and the driver IC 92 and the receiver IC 94 is, for example, about 30 μm, and the surface-emitting semiconductor laser 91 and the photodiode 92 are arranged very close to the optical waveguide 71. In this embodiment, the same effects as those of the other embodiments can be obtained.
[0059]
In each of the above embodiments, a case has been described in which one optical element module is mounted on one driver IC or receiver IC, but a plurality of optical element modules are mounted on one driver IC or receiver IC. Is also good. For example, as shown in FIG. ₁ , Λ ₂ , Λ ₃ May have a plurality of surface emitting semiconductor lasers 96a, 96b, 96c different from each other. Thereby, it is possible to easily cope with WDM.
[0060]
(Supplementary Note 1) An optical element module formed by an epitaxial lift-off process, and an optical element driving module for driving the optical element module, wherein the optical element module and the optical element driving module are both viewed from one side. An optical interconnection device having a through hole penetrating the other surface and being electrically connected via a conductor in the through hole.
[0061]
(Supplementary Note 2) A main substrate, a sub-mount substrate mounted on the main substrate, an optical element module formed by an epitaxial lift-off process and mounted on one surface side of the sub-mount substrate, An optical element drive module mounted on the other surface side, wherein the submount substrate, the optical element module, and the optical element drive module each have a through hole penetrating from one surface to the other surface An optical interconnection device, wherein the wiring of the submount substrate, the optical element module, and the optical element driving module are electrically connected via a conductor in the through hole.
[0062]
(Supplementary Note 3) A main substrate, a sub-mount substrate mounted on the main substrate, an optical element driving module mounted on one surface side of the sub-mount substrate, and an optical element driving module formed by an epitaxial lift-off process. An optical element module mounted on a module, wherein the optical element module and the optical element driving module each have a through hole penetrating from one surface to the other surface, and wiring of the submount substrate, The optical interconnection device, wherein the optical element module and the optical element drive module are electrically connected via a conductor in the through hole.
[0063]
(Supplementary note 4) The optical interconnection device according to supplementary note 2 or 3, wherein the submount substrate is mounted on the main substrate by solder bumps.
[0064]
(Supplementary Note 5) The optical element module, comprising: a main substrate; an optical element driving module mounted on the main substrate; and an optical element module formed by an epitaxial lift-off process and mounted on the optical element driving module. And the optical element drive module includes a first electrode provided on a first surface, a second electrode provided on a second surface, and a second electrode provided on the second surface. An optical interconnection device comprising: a through hole that penetrates; and a conductor formed in the through hole and electrically connecting the first electrode and the second electrode.
[0065]
(Supplementary note 6) The optical interconnection device according to supplementary note 5, wherein the optical element drive module is connected to the main board by a solder bump.
[0066]
(Supplementary Note 7) The optical element module, comprising: a main substrate; an optical element module formed by an epitaxial lift-off process and mounted on the main substrate; and an optical element driving module mounted on the optical element module. And the optical element drive module includes a first electrode provided on a first surface, a second electrode provided on a second surface, and a second electrode provided on the second surface. An optical interconnection device comprising: a through hole that penetrates; and a conductor formed in the through hole and electrically connecting the first electrode and the second electrode.
[0067]
(Supplementary note 8) The optical interconnection device according to supplementary note 7, wherein the optical element module is connected to the main board by a solder bump.
[0068]
(Supplementary note 9) The optical interconnection device according to any one of supplementary notes 1 to 8, wherein a plurality of the optical element modules are provided for one optical element driving module.
[0069]
【The invention's effect】
As described above, according to the optical interconnection device of the present invention, the through-holes are provided in the optical element module and the optical element drive module, and the modules are connected to each other via the conductor in the through-hole. Therefore, the optical element module and the optical element drive module can be mounted three-dimensionally on the main board or the sub-mount board. This makes it possible to reduce the size of the optical interconnection device as compared with the conventional one, and to easily cope with circuit changes. Further, since a normal printed wiring board can be used as the sub-mount substrate, or the sub-mount substrate can be omitted, the product cost can be reduced.
[0070]
Further, in the present invention, since the optical element module is formed by the ELO process, the element size is small, and a plurality of elements can be mounted on one optical element driving module. Thereby, it is possible to easily cope with WDM.
[Brief description of the drawings]
FIG. 1 is a schematic diagram illustrating an example of an optical connection device according to a first embodiment of the present invention.
FIG. 2 is a schematic cross-sectional view of the surface emitting semiconductor laser used in the first embodiment.
FIG. 3 is a schematic sectional view of the photodiode used in the first embodiment.
FIG. 4 is a schematic sectional view of a driver IC used in the first embodiment.
FIG. 5 is a schematic diagram (part 1) showing an outline of an ELO process.
FIG. 6 is a schematic diagram (part 2) illustrating an outline of an ELO process.
FIG. 7 is a schematic diagram (part 3) showing an outline of an ELO process.
FIG. 8 is a schematic diagram showing another modification of the first embodiment, showing an example in which two optical interconnection modules are stacked and mounted on one surface side of a submount substrate. .
FIG. 9 is a schematic diagram showing an optical interconnection device according to a second embodiment of the present invention.
FIG. 10 is an enlarged view of a portion indicated by a circle in FIG. 9;
FIG. 11 is a schematic diagram showing how the position of a surface emitting semiconductor laser is automatically adjusted by the surface tension of a solder bump.
FIG. 12 is a schematic diagram showing a configuration of an optical interconnection device according to a third embodiment of the present invention.
FIG. 13 is a schematic diagram illustrating an example in which a plurality of surface emitting semiconductor lasers having mutually different output light wavelengths are mounted on one driver IC.
[Explanation of symbols]
10, 70 ... photoelectric hybrid board,
11, 17a, 17b, 71 ... optical waveguide,
11a, 71a ... mirror,
12, 73 ... solder bumps,
20a, 20b, 68 ... submount substrate,
21, 81, 91, 96a, 96b, 96c ... surface emitting semiconductor laser (VCSEL),
22, 82, 92, 95 ... driver IC,
23, 26 ... LSI,
24, 83, 93 ... photodiode,
25, 84, 94 ... receiver IC,
30, 40, 50 ... through-hole,
31, 32, 33, 41, 42, 45, 46, 53, 55, 65, 70a, 80a ... electrodes,
34, 43, 51 ... insulating film,
35, 44, 52 ... conductive film,
61 ... GaAs substrate,
62 ... etching stop layer,
66 ... wax,
67 ... Diaphragm.

Claims (6)

An optical element module formed by an epitaxial lift-off process;
An optical element driving module for driving the optical element module,
Each of the optical element module and the optical element drive module has a through hole penetrating from one surface to the other surface, and is electrically connected to the optical element module via a conductor in the through hole. Optical interconnection device. A main board,
A sub-mount board mounted on the main board,
An optical element module formed by an epitaxial lift-off process and mounted on one surface side of the submount substrate;
An optical element drive module mounted on the other surface side of the submount substrate,
The submount substrate, the optical element module, and the optical element drive module each have a through hole penetrating from one surface to the other surface, and the wiring of the submount substrate, the optical element module, and the optical element The optical interconnection device, wherein the drive module is electrically connected through a conductor in the through hole. A main board,
A sub-mount board mounted on the main board,
An optical element drive module mounted on one surface side of the submount substrate,
An optical element module formed by an epitaxial lift-off process and mounted on the optical element drive module;
Each of the optical element module and the optical element drive module has a through-hole penetrating from one surface to the other surface, and the wiring of the submount substrate, the optical element module and the optical element drive module, An optical interconnection device electrically connected through a conductor in a through hole. A main board,
An optical element drive module mounted on the main board,
An optical element module formed by an epitaxial lift-off process and mounted on the optical element drive module;
The optical element module and the optical element drive module each include a first electrode provided on a first surface, a second electrode provided on a second surface, and a second electrode provided on the first surface. 2. An optical interconnection device, comprising: a through hole penetrating through the second surface; and a conductor formed in the through hole and electrically connecting the first electrode and the second electrode. . A main board,
An optical element module formed by an epitaxial lift-off process and mounted on the main substrate;
An optical element drive module mounted on the optical element module,
The optical element module and the optical element drive module each include a first electrode provided on a first surface, a second electrode provided on a second surface, and a second electrode provided on the first surface. 2. An optical interconnection device, comprising: a through hole penetrating through the second surface; and a conductor formed in the through hole and electrically connecting the first electrode and the second electrode. . The optical interconnection device according to any one of claims 1 to 5, wherein a plurality of the optical element modules are provided for one optical element drive module.

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