JP2004029007A5 - - Google Patents

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Publication number
JP2004029007A5
JP2004029007A5 JP2003129163A JP2003129163A JP2004029007A5 JP 2004029007 A5 JP2004029007 A5 JP 2004029007A5 JP 2003129163 A JP2003129163 A JP 2003129163A JP 2003129163 A JP2003129163 A JP 2003129163A JP 2004029007 A5 JP2004029007 A5 JP 2004029007A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003129163A
Other versions
JP2004029007A (ja
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Publication date
Priority claimed from US10/146,176 external-priority patent/US20030214762A1/en
Application filed filed Critical
Publication of JP2004029007A publication Critical patent/JP2004029007A/ja
Publication of JP2004029007A5 publication Critical patent/JP2004029007A5/ja
Pending legal-status Critical Current

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JP2003129163A 2002-05-14 2003-05-07 磁界検出センサ Pending JP2004029007A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/146,176 US20030214762A1 (en) 2002-05-14 2002-05-14 Magnetic field detection sensor

Publications (2)

Publication Number Publication Date
JP2004029007A JP2004029007A (ja) 2004-01-29
JP2004029007A5 true JP2004029007A5 (ja) 2006-06-22

Family

ID=29269749

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003129163A Pending JP2004029007A (ja) 2002-05-14 2003-05-07 磁界検出センサ

Country Status (6)

Country Link
US (1) US20030214762A1 (ja)
EP (1) EP1363134A3 (ja)
JP (1) JP2004029007A (ja)
KR (1) KR20030088355A (ja)
CN (1) CN1487501A (ja)
TW (1) TW200306431A (ja)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002198583A (ja) * 2000-12-26 2002-07-12 Hitachi Ltd 強磁性トンネル型磁気抵抗効果素子及び磁気ヘッド
JP4298691B2 (ja) 2005-09-30 2009-07-22 Tdk株式会社 電流センサおよびその製造方法
DE102005060713B4 (de) 2005-12-19 2019-01-24 Austriamicrosystems Ag Magnetfeldsensoranordnung und Verfahren zur berührungslosen Messung eines Magnetfeldes
JP4361077B2 (ja) 2006-10-31 2009-11-11 Tdk株式会社 磁気センサおよびその製造方法
WO2008059833A1 (fr) * 2006-11-15 2008-05-22 Alps Electric Co., Ltd. Détecteur magnétique et dispositif électronique
WO2008075610A1 (ja) * 2006-12-20 2008-06-26 Alps Electric Co., Ltd. 磁気検出装置
US7715156B2 (en) * 2007-01-12 2010-05-11 Tdk Corporation Tunnel magnetoresistive effect element and thin-film magnetic head with tunnel magnetoresistive effect read head element
WO2008099662A1 (ja) * 2007-01-31 2008-08-21 Alps Electric Co., Ltd. 磁気検出装置
WO2008093699A1 (ja) * 2007-02-02 2008-08-07 Alps Electric Co., Ltd. 磁気検出装置及びその製造方法
JP2010156543A (ja) * 2007-04-18 2010-07-15 Alps Electric Co Ltd 磁気検出装置
US20090059444A1 (en) * 2007-08-30 2009-03-05 Freescale Semiconductor, Inc. Methods and structures for an integrated two-axis magnetic field sensor
JP4780117B2 (ja) 2008-01-30 2011-09-28 日立金属株式会社 角度センサ、その製造方法及びそれを用いた角度検知装置
US8829901B2 (en) * 2011-11-04 2014-09-09 Honeywell International Inc. Method of using a magnetoresistive sensor in second harmonic detection mode for sensing weak magnetic fields
US8786987B2 (en) * 2012-04-27 2014-07-22 Seagate Technology Llc Biased two dimensional magnetic sensor
JP6083690B2 (ja) * 2012-05-11 2017-02-22 公立大学法人大阪市立大学 力率計測装置
US8991250B2 (en) * 2012-09-11 2015-03-31 The United States Of America As Represented By Secretary Of The Navy Tuning fork gyroscope time domain inertial sensor
US8953284B1 (en) * 2013-11-20 2015-02-10 HGST Netherlands B.V. Multi-read sensor having a narrow read gap structure
EP2963435B1 (en) * 2014-07-01 2017-01-25 Nxp B.V. Differential lateral magnetic field sensor system with offset cancelling and implemented using silicon-on-insulator technology
EP2966453B1 (en) * 2014-07-11 2018-10-31 Crocus Technology MLU based accelerometer using a magnetic tunnel junction
DE102014011245B3 (de) * 2014-08-01 2015-06-11 Micronas Gmbh Magnetfeldmessvorrichtung
US10809320B2 (en) 2015-04-29 2020-10-20 Everspin Technologies, Inc. Magnetic field sensor with increased SNR
DE102015007190B4 (de) * 2015-06-09 2017-03-02 Micronas Gmbh Magnetfeldmessvorrichtung
US10128311B2 (en) * 2017-03-17 2018-11-13 Toshiba Memory Corporation Magnetic memory device
US11574758B2 (en) * 2021-05-07 2023-02-07 Globalfoundries Singapore Pte. Ltd. Magnetic field sensor using different magnetic tunneling junction (MTJ) structures
KR102655502B1 (ko) * 2021-09-28 2024-04-09 서울대학교산학협력단 상보형 센서 일체형 인터페이스 회로 및 상보형 센서 일체형 차동 인터페이스 회로

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5751521A (en) * 1996-09-23 1998-05-12 International Business Machines Corporation Differential spin valve sensor structure
US5737157A (en) * 1996-10-09 1998-04-07 International Business Machines Corporation Disk drive with a thermal asperity reduction circuitry using a magnetoresistive sensor
US5748399A (en) * 1997-05-13 1998-05-05 International Business Machines Corporation Resettable symmetric spin valve
JP2002522866A (ja) * 1998-08-14 2002-07-23 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ スピントンネル接合素子を具える磁界センサ
US6259586B1 (en) * 1999-09-02 2001-07-10 International Business Machines Corporation Magnetic tunnel junction sensor with AP-coupled free layer
US6469926B1 (en) * 2000-03-22 2002-10-22 Motorola, Inc. Magnetic element with an improved magnetoresistance ratio and fabricating method thereof
US6607924B2 (en) * 2000-04-28 2003-08-19 Hewlett-Packard Company Solid-state memory with magnetic storage cells

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