JP2004019993A - Drying method for quartz substrate, and quartz substrate - Google Patents

Drying method for quartz substrate, and quartz substrate Download PDF

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Publication number
JP2004019993A
JP2004019993A JP2002173364A JP2002173364A JP2004019993A JP 2004019993 A JP2004019993 A JP 2004019993A JP 2002173364 A JP2002173364 A JP 2002173364A JP 2002173364 A JP2002173364 A JP 2002173364A JP 2004019993 A JP2004019993 A JP 2004019993A
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Prior art keywords
drying
quartz substrate
substrate
spin
spots
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JP2002173364A
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JP3857957B2 (en
Inventor
Masayuki Nakatsu
中津 正幸
Jiro Moriya
森谷 二郎
Atsushi Tajika
田鹿 篤
Tsuneo Numanami
沼波 恒夫
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Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a drying method for a quartz substrate capable of preventing generation of an aging stain on a substrate surface when storing the dried quartz substrate after the washing to reduce a frequency of execution of the rewashing before sending the stored quartz substrate to the following process. <P>SOLUTION: In this drying method for the quartz substrate after the washing, at least a first drying process for executing spin-drying to the washed quartz substrate and a second drying process for succeedingly or simultaneously heating and drying the quartz substrate after a process for washing the quartz substrate. <P>COPYRIGHT: (C)2004,JPO

Description

【0001】
【発明の属する技術分野】
本発明は、洗浄後の石英基板を乾燥する方法であって、該石英基板を乾燥後に保管しても、表面の経時的なしみの発生を防ぐことができる石英基板の乾燥方法に関する。
【0002】
【従来の技術】
半導体フォトマスク製造工程においては、サブストレート、フォトマスクブランク又はフォトマスクといった各段階の石英基板を洗浄する必要があり、洗浄後の石英基板表面を乾燥する方法として、イソプロピルアルコール(IPA)蒸気による溶媒置換により乾燥する方法、ならびに遠心力で液を吹き飛ばして乾燥する方法(スピン乾燥)等が行われている。
【0003】
しかしながら、IPA蒸気を用いる方法では、乾燥時間を短くすることができるが、IPAを加熱して使用するため防火上の取り扱いが困難であり、そのため装置を安全上特別な装置とする必要があり、装置のコストアップは免れない。
【0004】
また、遠心力で液を吹き飛ばして乾燥する方法(スピン乾燥)では、乾燥時間が長くなると、回転機構からの発塵がおこり、石英基板を汚染しやすい。特に、角形石英基板をスピン乾燥する場合には、風きりにより気流の乱れが大きくなり、乾燥時間が長引き、そのため汚染を引き起こしやすい。さらに、乾燥が不完全になりウォーターマークが残りやすい等の問題がある。
【0005】
また、保管時には、基板表面に経時的にしみが発生したり、パーティクルの付着が起こるといる問題もある。パーティクルの付着が起こる問題については、保管環境を清浄に保つことにより防ぐことができるが、保管時に基板表面に経時的に現れるしみの発生は防げないでいた。そのため、従来は、石英基板乾燥後の保管時間を短くして次工程に送るようにしているが、保管を完全になくすことは不可能であり、次工程に送る前に再度洗浄工程を入れることで対応せざるを得なかった。
【0006】
【発明が解決しようとする課題】
本発明は、上記のような問題点に鑑みてなされたもので、洗浄後の乾燥した石英基板を保管した場合に、基板表面に経時的なしみが発生するのを防ぎ、保管していた石英基板を次工程に送る前に、再洗浄を行う頻度を低減することができる石英基板の乾燥方法を提供することを目的とするものである。
【0007】
【課題を解決するための手段】
本発明は、上記課題を解決するためになされたもので、洗浄後の石英基板の乾燥方法であって、石英基板を洗浄する工程の後に、少なくとも、洗浄した石英基板にスピン乾燥を行う第一の乾燥工程と、その後又は同時に石英基板を加熱する乾燥を行う第二の乾燥工程を施すことを特徴とする石英基板の乾燥方法である(請求項1)。
【0008】
このように、石英基板を洗浄する工程の後に、少なくとも、洗浄した石英基板にスピン乾燥を行う第一の乾燥工程と、その後又は同時に石英基板を加熱する第二の乾燥工程を施すことで、スピン乾燥により短時間で基板上の水を振り払い、加熱する乾燥により経時的なしみの発生原因である基板表面に残る水膜をより効果的に蒸発できるため、このように乾燥した石英基板を保管した場合、経時的なしみが基板表面に発生するのを防ぐことができる。また、乾燥する工程を第一の乾燥工程と第二の乾燥工程の二段とすることで、各々の乾燥時間の短縮を図ることができるため、乾燥工程で基板が汚染される可能性を低減できる他、乾燥工程のスループットの向上を図ることができる。
尚、本明細書中において「しみ」とは、乾燥後の石英基板を保管した場合に経時的に発生するもので、パーティクルカウンターで0.2μm以上の輝点として検出され、これを原子間力顕微鏡(AFM、Atomic Force Microscope)で観察したとき、液滴状として確認されるものをいう。
【0009】
この場合、石英基板を加熱する乾燥を行う第二の乾燥工程は、赤外線ランプでの乾燥、温風乾燥、又はホットプレートによる基板加熱乾燥のうちいずれか一つ以上を行うことが好ましい(請求項2)。
【0010】
このように、石英基板を加熱する乾燥を行う第二の乾燥工程を、赤外線ランプでの乾燥、温風乾燥、又はホットプレートによる基板加熱乾燥のうちいずれか一つ以上とすることができ、これらの方法であれば、簡単かつ安価に構成できるし、石英基板を高清浄度に維持しつつ、経時的なしみの発生原因である基板表面に残る水膜を、加熱により効果的に蒸発させることができる。
【0011】
さらに本発明によれば、前記乾燥方法で洗浄後に乾燥した石英基板が提供され(請求項3)、また、洗浄後に乾燥した石英基板であって、該石英基板の保管の期間が乾燥後少なくとも7日以内の期間では、表面に0.2μm以上の大きさのしみが発生しないものである石英基板が提供される(請求項4)。
【0012】
このように、本発明によれば、石英基板を洗浄後に、スピン乾燥を行う第一の乾燥工程と、加熱する乾燥を行う第二の乾燥工程を施すことで、乾燥後に保管した場合でも、経時的なしみが発生するのを防ぐことのできる石英基板を提供することができる。このような石英基板は、例えばクラス10以下のクリーンルーム内でポリプロピレン製のボックスに入れられ、これをABS樹脂製の外箱の中に入れて保管した場合、少なくとも7日以内であれば、基板表面に0.2μm以上の大きさのしみが発生しないものである。従って、乾燥工程をスピン乾燥のみとした石英基板に比べ、より長く保管したとしても、次工程に送る前に、石英基板を再洗浄せずに使用することが可能となる。さらに、このような石英基板を、例えばサブストレート、フォトマスクブランク、又はフォトマスクといった、フォトマスク製造工程、デバイス製造工程等で用いた場合、再洗浄が必要とされる頻度が減少し、生産性や歩留まりの向上を図ることができる。
【0013】
【発明の実施の形態】
以下、本発明の実施の形態について説明するが、本発明はこれらに限定されるものではない。
本発明者らは、洗浄した石英基板を乾燥後、保管した時に、経時的なしみが発生する原因は、合成石英が表面の親水性がよく濡れ性が高いことから基板表面に残留する水膜によるものであることを見出した。そこで、洗浄後の石英基板をスピン乾燥することにより基板表面の水を短時間で振り払い、その後又は同時に石英基板を加熱することで基板表面の残留水膜を気化させることにより、経時的なしみの発生を抑えることが可能であることを想到し、本発明を完成させたものである。
【0014】
本発明の石英基板の乾燥方法は、石英基板を洗浄する工程の後に、少なくとも、洗浄した石英基板にスピン乾燥を行う第一の乾燥工程と、その後又は同時に石英基板を加熱する乾燥を行う第二の乾燥工程を施すものである。これは、乾燥工程を、加熱する乾燥のみとした場合、石英基板の乾燥に非常に時間がかかる上に、基板表面にステインが多発することが予測される。そこで、加熱する乾燥の前又はそれと同時に、スピン乾燥を行うことで、基板表面の水を短時間で振り払うこととした。スピン乾燥を短時間とすることで、前述のようなスピン乾燥時間が長びくことによる発塵や基板の汚染を引き起こすこともない。また、乾燥工程をスピン乾燥のみとした場合、乾燥後に石英基板を保管すると、基板表面に経時的なしみが発生するが、スピン乾燥の後又はそれと同時に、加熱する乾燥を行うことで、経時的なしみが発生する原因である基板表面に残る水膜を完全に蒸発させることができる。以上のことから、本発明では乾燥工程を二段階として洗浄した石英基板の乾燥を行うものである。
【0015】
先ず、石英基板を洗浄する工程は、石英基板を、熱硫酸による浸漬洗浄、界面活性剤によるスクラブ洗浄、フッ酸水溶液、水酸化カリウム水溶液及び超純水によるシャワー洗浄等の一般的な方法で洗浄する。その他、本発明において、石英基板の洗浄工程は特に限定されず、従来用いられていた方法のいずれであっても良い。
【0016】
次に、第一の乾燥工程としてスピン乾燥を行う。スピン乾燥は、遠心力で基板上の水を振り払い石英基板を乾燥する。これにより、第二の乾燥工程の乾燥時間を短縮できるとともに、第二の乾燥工程があるために、スピン乾燥の時間も短縮可能である。従って、乾燥工程で基板が汚染される可能性を低減できる他、全体として乾燥工程のスループットがよくなり生産性の向上を図ることができる。
【0017】
このスピン乾燥後又は同時に、第2の乾燥工程として、基板を加熱する乾燥を行う。加熱する乾燥として、例えば赤外線ランプでの乾燥、温風乾燥、ホットプレートによる基板加熱乾燥等のうちいずれか一つ以上を行うのが好ましい。これらの乾燥法により、スピン乾燥で水を振り払われた石英基板を加熱することで、基板表面の残留水膜を効果的に気化させることができ、乾燥後に石英基板を保管した場合でも、経時的なしみの発生を防ぐことができる。
【0018】
乾燥後の石英基板は、例えば、クラス10以下のクリーンルーム内でポリプロピレン製のボックスに入れ、これをABS樹脂製の外箱の中に入れて保管する。このように、保管する環境を清浄なものとすれば、保管時のパーティクルの付着による汚染を防ぐことができ、特に本発明では、保管中に残留水膜に起因してしみが発生することを防止することができる。本発明の石英基板を保管する場合、石英基板の保管方法自体は特に限定されず、保管中にパーティクルの付着を防止できる従来用いられていた方法のいずれであっても良い。
【0019】
尚、洗浄工程と乾燥工程の間に、石英基板を温水で加温する工程を行っても良い。石英基板を温水で加温することで、基板が温められ、その後の乾燥工程において、水の蒸発が促進され、乾燥時間のさらなる短縮を図ることができる。
【0020】
図2に本発明の乾燥方法を実施する場合に用いることができる赤外線ランプを具備するスピン乾燥機の概略構成例図を示した。このスピン乾燥機1は、乾燥室2とその内側に隔壁3を有し、その中に回転上下動自在のスピンドル4を備えている。スピンドル4の上端には石英基板を保持する支持台5があり、支持台5の上方には、支持台5に保持された石英基板に赤外線を照射するIRランプ6が上下動可能に支持アーム7に取り付けられている。乾燥室2と隔壁3内はそれぞれ、排気口8、9により排気されるとともに排水する機能も有している。
【0021】
この装置において、まず石英基板を支持台5上にセットし、排気口8、9より排気しつつ、スピンドル4を高速回転することで、支持台5上の石英基板に付着している水分(洗浄液)を振り飛ばすことによってスピン乾燥することができる。この時、スピンドルの回転数、排気圧、および乾燥時間を調整することによって所望の乾燥をすることができる。振り飛ばされた水分は隔壁3に当り乾燥室2内を浮遊して基板に再付着することを防止している。スピン乾燥が終了したなら、IRランプ6が下降し、支持台5上の石英基板直上に配置され、ランプを点灯することで、石英基板を赤外線ランプ乾燥することができる。この装置では、スピン乾燥中にIRランプを具備するため、スピンドル4を回転させつつ、IRランプ6を点灯し、同時に乾燥することもできる。こうすることによって、更に乾燥時間を短縮することができる。但し、スピン乾燥と石英基板を加熱する乾燥を、それぞれ別の装置でやってもよいことは言うまでもない。
【0022】
以上のような本発明の乾燥方法によって得られた石英基板は、乾燥後の保管時、経時的なしみの発生が抑制される。このような石英基板を、例えばクラス10以下のクリーンルーム内でポリプロピレン製のボックスに入れ、これをABS樹脂製の外箱の中に入れて保管した場合、少なくとも7日以内、さらには14日以内の期間、基板表面に現れる0.2μm以上の大きさの経時的なしみを防ぐことができるため、一旦箱詰めしたらそのまま出荷することが可能であり、また石英基板を次工程で用いる前に再洗浄することなく、箱から出してそのまま用いることも可能となる。そのため、このような石英基板を、例えばサブストレート、フォトマスクブランク、又はフォトマスク製造工程、デバイス製造工程で用いた場合、生産性と歩留まりの向上を図ることができる。
【0023】
【実施例】
以下、実施例及び比較例を示し、本発明を具体的に説明するが、本発明は下記の実施例等に限定されるものではない。
(実施例1)
200cmの角形石英基板(膜付けをしていないサブストレート)を用意した。先ず、洗浄工程として、用意した角形石英基板を、0.5重量%のフッ酸水溶液でシャワー洗浄後、超純水でシャワーした後pH11の水酸化カリウム水溶液でシャワー洗浄し、引き続いて超純水でシャワー洗浄した。次に、前記洗浄工程で清浄化された角形石英基板を60℃の温純水で60秒間掛け流しリンスした。次に、第一の乾燥工程として、角形石英基板を回転数1500rpmで20秒間スピン乾燥し、その後、第2の乾燥工程として、180秒間、赤外線ランプでの加熱により乾燥した。乾燥の後、石英基板はクラス10以下のクリーンルーム内でポリプロピレン製のボックスに入れ、これをABS樹脂製の外箱の中に入れて保管した。基板表面のしみの数は、先ずパーティクルカウンターで0.2μm以上のサイズの輝点を確認し、それを原子間力顕微鏡(AFM、Atomic Force Microscope)でしみであるかどうかを確認し数えた。その結果、保管して0、2、5、7、10、14日目の経時的なしみの発生は0.2μm以上のサイズで0個であり、18、20、21日目に1個であるのが確認された。
【0024】
(実施例2)
実施例1と同様に200cmの角形石英基板を用意した。先ず、洗浄工程として、用意した角形石英基板を、0.5重量%のフッ酸水溶液でシャワー洗浄後、超純水でシャワーした後pH11の水酸化カリウム水溶液でシャワー洗浄し、引き続いて超純水でシャワー洗浄した。次に、前記洗浄工程で清浄化された角形石英基板を60℃の温純水に60秒間掛け流しリンスした。次に、第一の乾燥工程として、角形石英基板を回転数1500rpmで20秒間スピン乾燥し、その後、第2の乾燥工程として、角形石英基板を120℃のホットプレートによる加熱で120秒間乾燥した。乾燥の後、石英基板はクラス10以下のクリーンルーム内でポリプロピレン製のボックスに入れ、これをABS樹脂製の外箱の中に入れて保管した。基板表面のしみの数は、先ずパーティクルカウンターで0.2μm以上の輝点を確認し、それをAFMでしみであるかどうかを確認し数えた。その結果、7日間保管した後の経時的なしみの発生は0.2μm以上のサイズで0個であった。
【0025】
(実施例3)
実施例1と同様に200cmの角形石英基板を用意した。先ず、洗浄工程として、用意した角形石英基板を、0.5重量%のフッ酸水溶液でシャワー洗浄後、超純水でシャワーした後pH11の水酸化カリウム水溶液でシャワー洗浄し、引き続いて超純水でシャワー洗浄した。次に、前記洗浄工程で清浄化された角形石英基板を60℃の温純水に60秒間掛け流しリンスした。次に、第一の乾燥工程として、角形石英基板を回転数1500rpmで20秒間スピン乾燥し、その後、第2の乾燥工程として、角形石英基板を60℃の温風で120秒間乾燥した。乾燥の後、石英基板はクラス10以下のクリーンルーム内でポリプロピレン製のボックスに入れ、これをABS樹脂製の外箱の中に入れて保管した。基板表面のしみの数は、先ずパーティクルカウンターで0.2μm以上の輝点を確認し、それをAFMでしみであるかどうかを確認し数えた。その結果、7日間保管した後の経時的なしみの発生は0.2μm以上のサイズで0個であった。
【0026】
(比較例1)
200cmの角形石英基板を用意した。先ず、洗浄工程として、用意した角形石英基板を、0.5重量%のフッ酸水溶液でシャワー洗浄後、超純水でシャワーした後pH11の水酸化カリウム水溶液でシャワー洗浄し、引き続いて超純水でシャワー洗浄した。次に、前記洗浄工程で清浄化された角形石英基板を60℃の温純水で60秒間掛け流しリンスした。次に、乾燥工程として、角形石英基板を回転数1500rpmで60秒間スピン乾燥した。乾燥の後、石英基板はクラス10以下のクリーンルーム内でポリプロピレン製のボックスに入れ、これをABS樹脂製の外箱の中に入れて保管した。基板表面のしみの数は、先ずパーティクルカウンターで0.2μm以上の輝点を確認し、それをAFMでしみであるかどうかを確認し数えた。その結果、保管して0、2日目の経時的なしみの発生は0.2μm以上のサイズで0個であったが、5日目で2個、7日目で3個、10日目で6個、14、18、20、21日目で8個であるのが確認された。
【0027】
図1は、実施例1と比較例での経時的なしみの発生を示したグラフである。実施例1では、保管して7日目、さらに14日目までは基板表面上に0.2μm以上のサイズの経時的なしみを発生していないのが判る。一方、比較例では、保管して2日目までは基板表面上に経時的なしみが発生していないが、5日目を過ぎると早くもしみが発生している。
【0028】
尚、本発明は、上記実施形態に限定されるものではない。上記実施形態は、例示であり、本発明の特許請求の範囲に記載された技術的思想と実質的に同一な構成を有し、同様な作用効果を奏するものは、いかなるものであっても本発明の技術的範囲に包含される。
【0029】
例えば、上記実施例では、角形合成石英基板を用いて、洗浄後の石英基板の乾燥を行ったが、本発明の方法は、このような形状や形態の石英基板に限定されずに適用することができ、また、パターン用の膜が付けてあるフォトマスクブランクやフォトマスクにも適用することができる。
【0030】
【発明の効果】
本発明によれば、洗浄工程により清浄化した石英基板を乾燥する際、該基板に第一の乾燥工程としてスピン乾燥を行い、その後又は同時に第二の乾燥工程として加熱する乾燥を行うことにより、基板表面に経時的なしみが発生するのを防ぐことが可能となる。そのため、石英基板を次工程で用いる前に再洗浄する頻度を低減できるので、一旦箱詰めしたらそのまま出荷することが可能となり、またそのまま箱から出して用いることも可能となる。さらに、このような石英基板を、例えばサブストレート、フォトマスクブランク、又はフォトマスク製造工程、デバイス製造工程で用いた場合、生産性と歩留まりの向上を図ることができる。
【図面の簡単な説明】
【図1】従来と本発明の場合の経時的なしみの発生を示したグラフである。
【図2】本発明で使用される赤外線ランプを具備するスピン乾燥機の概略構成例図である。
【符号の説明】
1…スピン乾燥機、 2…乾燥室、 3…隔壁、 4…スピンドル、 5…支持台、 6…IRランプ、 7…支持アーム、 8、9…排気口。
[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method for drying a quartz substrate after cleaning, and more particularly to a method for drying a quartz substrate that can prevent generation of spots on the surface over time even if the quartz substrate is stored after drying.
[0002]
[Prior art]
In the semiconductor photomask manufacturing process, it is necessary to wash the quartz substrate at each stage such as a substrate, a photomask blank or a photomask. As a method for drying the washed quartz substrate surface, a solvent using isopropyl alcohol (IPA) vapor is used. A method of drying by replacement, a method of drying by blowing off a liquid by centrifugal force (spin drying), and the like are performed.
[0003]
However, in the method using IPA vapor, the drying time can be shortened. However, since the IPA is heated and used, it is difficult to handle on fire prevention. Therefore, it is necessary to use a special device for safety. Inevitably increases the cost of the device.
[0004]
In the method of drying by spinning off the liquid by centrifugal force (spin drying), if the drying time is long, dust is generated from the rotating mechanism, and the quartz substrate is easily contaminated. In particular, when a square quartz substrate is spin-dried, the turbulence of the air current becomes large due to the wind, and the drying time is prolonged, thereby easily causing contamination. Furthermore, there is a problem that drying is incomplete and a watermark is likely to remain.
[0005]
In addition, during storage, there is a problem that the substrate surface is stained with time and particles adhere. The problem of the adhesion of particles can be prevented by keeping the storage environment clean, but it has not been possible to prevent the appearance of stains that appear on the substrate surface over time during storage. For this reason, conventionally, the storage time after drying the quartz substrate is shortened and sent to the next process, but it is impossible to completely eliminate the storage, and it is necessary to repeat the washing process before sending to the next process I had to deal with it.
[0006]
[Problems to be solved by the invention]
The present invention has been made in view of the above-described problems, and when storing a dried quartz substrate after washing, it is possible to prevent the occurrence of blemishes on the substrate surface over time, and to store the quartz that has been stored. It is an object of the present invention to provide a method for drying a quartz substrate, which can reduce the frequency of re-cleaning before sending the substrate to the next step.
[0007]
[Means for Solving the Problems]
The present invention has been made in order to solve the above-mentioned problems, and is a method for drying a quartz substrate after washing, wherein after a step of washing the quartz substrate, at least a first step of spin-drying the washed quartz substrate is performed. And a second drying step in which the quartz substrate is dried by heating the quartz substrate thereafter or simultaneously (claim 1).
[0008]
Thus, after the step of cleaning the quartz substrate, at least a first drying step of spin-drying the washed quartz substrate and a second drying step of heating the quartz substrate thereafter or simultaneously are performed, so that the spinning is performed. The water on the substrate is shaken off in a short time by drying, and the water film remaining on the surface of the substrate, which is a cause of bleeding over time, can be more effectively evaporated by the drying by heating. Therefore, the quartz substrate thus dried is stored. In this case, it is possible to prevent the occurrence of bleeding over time on the substrate surface. In addition, since the drying step is performed in two stages, the first drying step and the second drying step, each drying time can be shortened, thereby reducing the possibility of contamination of the substrate in the drying step. Besides, it is possible to improve the throughput of the drying step.
In the present specification, “stain” is generated over time when a dried quartz substrate is stored, and is detected as a bright spot of 0.2 μm or more by a particle counter. When observed with a microscope (AFM, Atomic Force Microscope), it refers to what is confirmed as a droplet.
[0009]
In this case, the second drying step of drying the quartz substrate by heating is preferably performed by any one or more of drying with an infrared lamp, hot air drying, and substrate heating and drying using a hot plate. 2).
[0010]
In this manner, the second drying step of performing drying by heating the quartz substrate can be performed by drying with an infrared lamp, hot air drying, or any one or more of substrate heating and drying using a hot plate. With the method described above, it is possible to easily and inexpensively configure, and it is possible to effectively evaporate a water film remaining on the substrate surface, which is a cause of aging spots, by heating while maintaining the quartz substrate with high cleanliness. Can be.
[0011]
Further, according to the present invention, there is provided a quartz substrate dried after washing by the drying method (Claim 3), and the quartz substrate dried after washing, wherein the storage period of the quartz substrate is at least 7 after drying. A quartz substrate is provided that does not cause spots having a size of 0.2 μm or more on the surface within a period of less than one day (claim 4).
[0012]
As described above, according to the present invention, after the quartz substrate is washed, the first drying step of performing spin drying and the second drying step of performing drying by heating are performed. A quartz substrate that can prevent occurrence of stains can be provided. Such a quartz substrate is placed in a box made of polypropylene, for example, in a clean room of class 10 or less, and is stored in an outer box made of ABS resin. In which no spots having a size of 0.2 μm or more are generated. Therefore, even if the quartz substrate is stored for a longer time than a quartz substrate in which the drying process is performed only by spin drying, the quartz substrate can be used without being washed again before being sent to the next process. Further, when such a quartz substrate is used in a photomask manufacturing process such as a substrate, a photomask blank, or a photomask, a device manufacturing process, etc., the frequency at which recleaning is required is reduced, and productivity is reduced. And the yield can be improved.
[0013]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described, but the present invention is not limited thereto.
The inventors of the present invention have found that, after drying and storing the washed quartz substrate, the cause of aging is caused by the water film remaining on the substrate surface due to the high hydrophilicity and high wettability of the synthetic quartz surface. It was found to be due to. Therefore, the water on the substrate surface is shaken off in a short time by spin-drying the washed quartz substrate, and thereafter or simultaneously, the residual water film on the substrate surface is vaporized by heating the quartz substrate, thereby causing a stain over time. The present invention has been completed in view of the fact that generation of the above can be suppressed.
[0014]
The method for drying a quartz substrate of the present invention comprises, after the step of washing the quartz substrate, at least a first drying step of spin-drying the washed quartz substrate, and a second drying step of heating the quartz substrate thereafter or simultaneously. Is performed. This is because, if the drying process is only drying by heating, it takes much time to dry the quartz substrate, and moreover, it is expected that stains frequently occur on the substrate surface. Therefore, spin drying is performed before or at the same time as drying by heating, so that water on the substrate surface is shaken off in a short time. By shortening the spin drying time, dust generation and contamination of the substrate due to the long spin drying time as described above are not caused. Further, when the drying step is only spin drying, when the quartz substrate is stored after drying, the surface of the substrate is stained with time. It is possible to completely evaporate the water film remaining on the substrate surface, which is a cause of the generation of stains. As described above, in the present invention, the dried quartz substrate is dried in two stages of the drying process.
[0015]
First, in the step of cleaning the quartz substrate, the quartz substrate is cleaned by a general method such as immersion cleaning with hot sulfuric acid, scrub cleaning with a surfactant, shower cleaning with a hydrofluoric acid aqueous solution, a potassium hydroxide aqueous solution and ultrapure water. I do. In addition, in the present invention, the step of cleaning the quartz substrate is not particularly limited, and may be any of conventionally used methods.
[0016]
Next, spin drying is performed as a first drying step. In spin drying, water on the substrate is shaken off by centrifugal force to dry the quartz substrate. Thus, the drying time in the second drying step can be reduced, and the spin drying time can be also reduced because of the second drying step. Therefore, the possibility that the substrate is contaminated in the drying step can be reduced, and the throughput of the drying step can be improved as a whole, and the productivity can be improved.
[0017]
After or simultaneously with the spin drying, the substrate is dried by heating as a second drying step. As the drying by heating, for example, it is preferable to perform any one or more of drying with an infrared lamp, drying with hot air, and heating and drying the substrate with a hot plate. By heating the quartz substrate to which water has been shaken off by spin drying by these drying methods, the residual water film on the substrate surface can be effectively vaporized, and even if the quartz substrate is stored after drying, It is possible to prevent the occurrence of stains.
[0018]
The dried quartz substrate is placed in a polypropylene box in a clean room of class 10 or less, for example, and stored in an outer box made of ABS resin. As described above, if the storage environment is clean, contamination due to adhesion of particles during storage can be prevented.In particular, in the present invention, it is possible to prevent the occurrence of spots due to the residual water film during storage. Can be prevented. When the quartz substrate of the present invention is stored, the method of storing the quartz substrate itself is not particularly limited, and may be any of conventionally used methods capable of preventing adhesion of particles during storage.
[0019]
Note that a step of heating the quartz substrate with warm water may be performed between the washing step and the drying step. By heating the quartz substrate with warm water, the substrate is heated, and in the subsequent drying step, evaporation of water is promoted, and the drying time can be further reduced.
[0020]
FIG. 2 shows a schematic configuration example of a spin dryer having an infrared lamp that can be used when the drying method of the present invention is performed. The spin dryer 1 has a drying chamber 2 and a partition 3 inside the drying chamber 2, and a spindle 4 that can rotate and move up and down therein. At the upper end of the spindle 4, there is a support table 5 for holding a quartz substrate. Above the support table 5, an IR lamp 6 for irradiating the quartz substrate held by the support table 5 with infrared rays is vertically movable. Attached to. The inside of the drying chamber 2 and the inside of the partition 3 are also evacuated and exhausted by exhaust ports 8 and 9, respectively.
[0021]
In this apparatus, first, the quartz substrate is set on the support table 5 and the spindle 4 is rotated at a high speed while exhausting air from the exhaust ports 8 and 9, so that the water (cleaning liquid) adhering to the quartz substrate on the support table 5 is removed. ) Can be spin dried by shaking. At this time, desired drying can be performed by adjusting the rotation speed of the spindle, the exhaust pressure, and the drying time. The shaken water hits the partition wall 3 to prevent the water from floating in the drying chamber 2 and re-adhering to the substrate. When the spin drying is completed, the IR lamp 6 is lowered, and is placed immediately above the quartz substrate on the support base 5, and by turning on the lamp, the quartz substrate can be dried by the infrared lamp. In this apparatus, since the IR lamp is provided during the spin drying, the IR lamp 6 can be turned on while rotating the spindle 4, and the drying can be performed at the same time. By doing so, the drying time can be further reduced. However, it goes without saying that spin drying and drying for heating the quartz substrate may be performed by different apparatuses.
[0022]
In the quartz substrate obtained by the drying method of the present invention as described above, generation of spots over time is suppressed during storage after drying. For example, when such a quartz substrate is put in a polypropylene box in a clean room of class 10 or less and stored in an outer box made of an ABS resin, at least within 7 days, and even within 14 days. During this period, it is possible to prevent spots with a size of 0.2 μm or more from appearing on the surface of the substrate over time. Therefore, once packed in a box, the substrate can be shipped as it is. It is also possible to use it as it is without taking it out of the box. Therefore, when such a quartz substrate is used in, for example, a substrate, a photomask blank, or a photomask manufacturing process or a device manufacturing process, productivity and yield can be improved.
[0023]
【Example】
Hereinafter, the present invention will be described specifically with reference to Examples and Comparative Examples, but the present invention is not limited to the following Examples and the like.
(Example 1)
A 200 cm 2 square quartz substrate (substrate without a film) was prepared. First, as a cleaning step, the prepared square quartz substrate is shower-washed with a 0.5% by weight aqueous hydrofluoric acid solution, showered with ultrapure water, and then showered with an aqueous solution of potassium hydroxide having a pH of 11 and subsequently ultrapure water. Was washed in the shower. Next, the square quartz substrate cleaned in the above-mentioned washing step was rinsed by flowing it in hot pure water at 60 ° C. for 60 seconds. Next, as a first drying step, the square quartz substrate was spin-dried at 1500 rpm for 20 seconds, and then, as a second drying step, dried by heating with an infrared lamp for 180 seconds. After drying, the quartz substrate was placed in a box made of polypropylene in a clean room of class 10 or less and stored in an outer box made of ABS resin. The number of stains on the substrate surface was determined by first confirming a bright spot having a size of 0.2 μm or more with a particle counter, and confirming whether the spot was a stain with an atomic force microscope (AFM, Atomic Force Microscope). As a result, the occurrence of spots with time on days 0, 2, 5, 7, 10, and 14 after storage was 0 for a size of 0.2 μm or more, and one for days 18, 20, and 21. It was confirmed that there was.
[0024]
(Example 2)
As in Example 1, a 200 cm 2 square quartz substrate was prepared. First, as a cleaning step, the prepared square quartz substrate is shower-washed with a 0.5% by weight aqueous hydrofluoric acid solution, showered with ultrapure water, and then showered with an aqueous solution of potassium hydroxide having a pH of 11 and subsequently ultrapure water. Was washed in the shower. Next, the square quartz substrate cleaned in the washing step was rinsed by pouring it into hot pure water at 60 ° C. for 60 seconds. Next, as a first drying step, the square quartz substrate was spin-dried at 1500 rpm for 20 seconds, and then, as a second drying step, the square quartz substrate was dried by heating on a hot plate at 120 ° C. for 120 seconds. After drying, the quartz substrate was placed in a box made of polypropylene in a clean room of class 10 or less and stored in an outer box made of ABS resin. The number of spots on the surface of the substrate was determined by first checking the bright spots of 0.2 μm or more with a particle counter, and checking whether the spots were spots by AFM. As a result, the number of spots with time after storage for 7 days was 0 at a size of 0.2 μm or more.
[0025]
(Example 3)
As in Example 1, a 200 cm 2 square quartz substrate was prepared. First, as a cleaning step, the prepared square quartz substrate is shower-washed with a 0.5% by weight aqueous hydrofluoric acid solution, showered with ultrapure water, and then showered with an aqueous solution of potassium hydroxide having a pH of 11 and subsequently ultrapure water. Was washed in the shower. Next, the square quartz substrate cleaned in the washing step was rinsed by pouring it into hot pure water at 60 ° C. for 60 seconds. Next, as a first drying step, the square quartz substrate was spin-dried at a rotation speed of 1500 rpm for 20 seconds, and then, as a second drying step, the square quartz substrate was dried with hot air at 60 ° C. for 120 seconds. After drying, the quartz substrate was placed in a box made of polypropylene in a clean room of class 10 or less and stored in an outer box made of ABS resin. The number of spots on the surface of the substrate was determined by first checking the bright spots of 0.2 μm or more with a particle counter, and checking whether the spots were spots by AFM. As a result, the number of spots with time after storage for 7 days was 0 at a size of 0.2 μm or more.
[0026]
(Comparative Example 1)
A square quartz substrate of 200 cm 2 was prepared. First, as a cleaning step, the prepared square quartz substrate is shower-washed with a 0.5% by weight aqueous hydrofluoric acid solution, showered with ultrapure water, and then showered with an aqueous solution of potassium hydroxide having a pH of 11 and subsequently ultrapure water. Was washed in the shower. Next, the square quartz substrate cleaned in the above-mentioned washing step was rinsed by flowing it in hot pure water at 60 ° C. for 60 seconds. Next, as a drying step, the square quartz substrate was spin-dried at a rotation speed of 1500 rpm for 60 seconds. After drying, the quartz substrate was placed in a box made of polypropylene in a clean room of class 10 or less and stored in an outer box made of ABS resin. The number of spots on the surface of the substrate was determined by first checking the bright spots of 0.2 μm or more with a particle counter, and checking whether the spots were spots by AFM. As a result, the occurrence of spots with time on days 0 and 2 after storage was 0 for a size of 0.2 μm or more, but 2 on day 5, 3 on day 7, and 10 on day 7. It was confirmed that the number was 6, and the number was 8 on the days 14, 18, 20, and 21.
[0027]
FIG. 1 is a graph showing the occurrence of spots over time in Example 1 and Comparative Example. In Example 1, it can be seen that no staining with a size of 0.2 μm or more over time occurred on the substrate surface until the 7th day and further the 14th day after storage. On the other hand, in the comparative example, no bleeding over time occurred on the substrate surface until the second day after storage, but the bleeding occurred as early as the fifth day.
[0028]
Note that the present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and has substantially the same configuration as the technical idea described in the claims of the present invention, and any device having the same operation and effect can be realized by the present invention. It is included in the technical scope of the invention.
[0029]
For example, in the above embodiment, the quartz substrate after cleaning was dried using a square synthetic quartz substrate, but the method of the present invention can be applied without being limited to a quartz substrate having such a shape and form. In addition, the present invention can be applied to a photomask blank or a photomask provided with a pattern film.
[0030]
【The invention's effect】
According to the present invention, when drying the quartz substrate cleaned by the cleaning step, spin drying is performed on the substrate as a first drying step, and thereafter, drying is performed by heating as a second drying step. It is possible to prevent the occurrence of aging spots on the substrate surface. Therefore, the frequency of re-cleaning the quartz substrate before using it in the next step can be reduced, so that once it is packed in a box, it can be shipped as it is, and it is also possible to use it out of the box. Furthermore, when such a quartz substrate is used in, for example, a substrate, a photomask blank, a photomask manufacturing process, or a device manufacturing process, productivity and yield can be improved.
[Brief description of the drawings]
FIG. 1 is a graph showing the occurrence of spots over time in the conventional case and the present invention.
FIG. 2 is a schematic structural example diagram of a spin dryer having an infrared lamp used in the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Spin dryer, 2 ... Drying room, 3 ... Partition wall, 4 ... Spindle, 5 ... Support stand, 6 ... IR lamp, 7 ... Support arm, 8, 9 ... Exhaust port.

Claims (4)

洗浄後の石英基板の乾燥方法であって、石英基板を洗浄する工程の後に、少なくとも、洗浄した石英基板にスピン乾燥を行う第一の乾燥工程と、その後又は同時に石英基板を加熱する乾燥を行う第二の乾燥工程を施すことを特徴とする石英基板の乾燥方法。A method for drying a quartz substrate after washing, wherein after the step of washing the quartz substrate, at least a first drying step of spin-drying the washed quartz substrate and thereafter or simultaneously performing drying to heat the quartz substrate. A method for drying a quartz substrate, comprising performing a second drying step. 前記石英基板を加熱する乾燥を行う第二の乾燥工程は、赤外線ランプでの乾燥、温風乾燥、又はホットプレートによる基板加熱乾燥のうちいずれか一つ以上を行うことを特徴とする請求項1に記載の石英基板の乾燥方法。The second drying step of performing drying by heating the quartz substrate includes performing at least one of drying with an infrared lamp, drying with hot air, and substrate heating and drying with a hot plate. 3. The method for drying a quartz substrate according to item 1. 請求項1又は請求項2に記載の方法で洗浄後に乾燥した石英基板。A quartz substrate dried after being washed by the method according to claim 1. 洗浄後に乾燥した石英基板であって、該石英基板の保管の期間が乾燥後少なくとも7日以内の期間では、表面に0.2μm以上の大きさのしみが発生しないものであることを特徴とする石英基板。A quartz substrate that has been dried after cleaning, wherein the surface of the quartz substrate is free from spots having a size of 0.2 μm or more when stored for at least 7 days after drying. Quartz substrate.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8956463B2 (en) 2008-10-08 2015-02-17 Shin-Etsu Chemical Co., Ltd. Method for cleaning photomask-related substrate, cleaning method, and cleaning fluid supplying apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8956463B2 (en) 2008-10-08 2015-02-17 Shin-Etsu Chemical Co., Ltd. Method for cleaning photomask-related substrate, cleaning method, and cleaning fluid supplying apparatus

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