JP2004014658A5 - - Google Patents

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Publication number
JP2004014658A5
JP2004014658A5 JP2002163800A JP2002163800A JP2004014658A5 JP 2004014658 A5 JP2004014658 A5 JP 2004014658A5 JP 2002163800 A JP2002163800 A JP 2002163800A JP 2002163800 A JP2002163800 A JP 2002163800A JP 2004014658 A5 JP2004014658 A5 JP 2004014658A5
Authority
JP
Japan
Prior art keywords
conductivity type
semiconductor region
epitaxial layer
impurity
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002163800A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004014658A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002163800A priority Critical patent/JP2004014658A/ja
Priority claimed from JP2002163800A external-priority patent/JP2004014658A/ja
Publication of JP2004014658A publication Critical patent/JP2004014658A/ja
Publication of JP2004014658A5 publication Critical patent/JP2004014658A5/ja
Pending legal-status Critical Current

Links

JP2002163800A 2002-06-05 2002-06-05 半導体装置およびその製造方法 Pending JP2004014658A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002163800A JP2004014658A (ja) 2002-06-05 2002-06-05 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002163800A JP2004014658A (ja) 2002-06-05 2002-06-05 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2004014658A JP2004014658A (ja) 2004-01-15
JP2004014658A5 true JP2004014658A5 (https=) 2005-07-07

Family

ID=30432125

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002163800A Pending JP2004014658A (ja) 2002-06-05 2002-06-05 半導体装置およびその製造方法

Country Status (1)

Country Link
JP (1) JP2004014658A (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100533967C (zh) 2004-05-06 2009-08-26 Nxp股份有限公司 电子装置
KR100747657B1 (ko) * 2006-10-26 2007-08-08 삼성전자주식회사 매크로 및 마이크로 주파수 튜닝이 가능한 반도체 소자 및이를 갖는 안테나와 주파수 튜닝 회로
WO2010077248A1 (en) * 2008-12-31 2010-07-08 Sierra Nevada Corporation Monolithic semiconductor microwave switch array
CN112713145A (zh) * 2019-10-24 2021-04-27 华为技术有限公司 一种开关半导体器件及其制备方法、固态移相器
CN115602539A (zh) * 2022-10-12 2023-01-13 中国电子科技集团公司第十三研究所（Cn） 硅基pin二极管平面化制备方法及硅基pin二极管

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