JP2004010921A - Method and apparatus for vacuum arc vapor deposition - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To regulate the magnetic field of one or a plurality of magnets located at one end side of a curving or inflecting duct from a terminal magnet located closest to an injection hole of the duct, to prevent deterioration in film forming characteristics due to the magnetic field characteristics of a magnetic filter, and to attain vacuum arc vapor deposition with uniform film forming characteristics. <P>SOLUTION: The one or the plurality of specified magnets (magnetic coil 14b') located at an evaporation source 11 side from the terminal magnet (magnetic coil 14d) located closest to the injection hole 13 among the respective magnets (magnetic coils 14a, 14b', 14c, 14d) forming the magnetic filter 18b of the curving or inflecting duct 9 are set in such a manner as to be inclined with respect to the cross section of the duct 9, and the flying direction of ions is controlled by the magnetic field generated by the specified magnets. <P>COPYRIGHT: (C)2004,JPO

Description

【００３６】
そして、プラズマ２０ａ中のイオンが電子に引張られて飛行する傾向にあることから、前記のドリフトの効果により、イオンの蒸着位置も同様に所期位置からずれる。
【００３７】
そのため、磁気フィルタ１８によってドロップレットを除去する従来の真空アーク蒸着にあっては、基材６の所望位置に陰極材料１９の薄膜を蒸着して所期の膜厚に成膜することが困難であり、均一な成膜特性等の所望の成膜特性を得るには十分とはいえない問題点がある。
【００３８】
そして、蒸発源１１の個数等によらず、磁場フィルタの作用でドロップレットを除去するこの種の真空アーク蒸着においては、同様の問題点が生じる。
【００３９】
なお、ダクト９及び電磁コイル１４ａ〜１４ｄが断面矩形の場合、矩形の電磁コイル１４ａ〜１４ｄの磁場特性に基づき、中心部よりも外寄りになる程、磁場の傾斜∇Ｂが大きくなるため、斜め下方向のドリフト速度が大きくなって下方向の発散が大きくなる。
【００４０】
本発明は、とくに磁気フィルタの終端磁石（電磁コイル１４ｄ）よりダクト９の一端側（蒸発源側）の磁石の磁場による前記のドリフトに着目して基材の成膜特性を向上することを課題とし、さらには、陰極材料のイオンの基材到達位置を自由に制御して成膜特性の一層の向上等を図ることも課題とする。
【００４１】
【課題を解決するための手段】
前記の課題を解決するために、本発明の請求項１の真空アーク蒸着方法は、磁気フィルタを形成する各磁石のうちの放出口に最も近い終端磁石より蒸発源側の１又は複数個の指定磁石を、ダクトの横断面に対して傾けて設置し、指定磁石の発生磁場により、イオンの飛着方向を制御する。
【００４２】
この場合、磁気フィルタを形成する各磁石のうちの終端磁石以外の１又は複数個の磁石が、ダクトの横断面に対して積極的に傾けてダクトの周囲に設けられ、それらが発生する偏向磁場の方向が、ダクトの横断面にほぼ平行に設ける従来方法の発生磁場方向と異なり、傾きの角度を適当に設定することにより、前記電子やプラズマ流から引出されたイオンの飛行方向が修正されて前記ドリフトが抑制され、陰極材料の基材蒸着位置が前記ドリフトの影響を受けにくくなって成膜特性が向上する。
【００４３】
つぎに、請求項２の真空アーク蒸着方法は、請求項１と同様に指定磁石をダクトの横断面に対して傾けて設置するとともに、終端磁石を放出口の放出面に対して傾けて設置し、
指定磁石及び終端磁石の発生磁場により、陰極材料のイオンの飛行方向を制御する。
【００４４】
この場合、終端磁石の発生磁場も、従来の終端磁石を放出面に平行に設置する場合と異なる。
【００４５】
そして、指定磁石及び終端磁石の角度を適当に設定することにより、指定磁石及び終端磁石の発生磁場で電子やイオンの飛行方向が修正されて前記ドリフトが抑制され、成膜特性が一層向上する。
【００４６】
つぎに、請求項３の真空アーク蒸着方法は、指定磁石の設置角度又は指定磁石及び終端磁石の設置角度を可変自在にする。
【００４７】
したがって、指定磁石の設置角度又は指定磁石及び終端磁石の設置角度を成膜前及び成膜中に自在に変えることができ、種々の成膜特性の蒸着薄膜を、所期の特性で自在に成膜することができる。
【００４８】
そして、請求項１，２，３の真空アーク蒸着方法において、各磁石は電磁コイルからなることが実用的で好ましい。
【００４９】
また、指定磁石の設置角度又は指定磁石及び終端磁石の設置角度は自動制御されることが好ましい。
【００５０】
さらに、各磁石が電磁コイルからなり、指定磁石の設置角度の制御又は指定磁石及び終端磁石の設置角度の制御に連動して各磁石の電磁コイルのコイル電流を制御することが、成膜特性上からは一層好ましい。
【００５１】
つぎに、蒸発源を複数個にすれば、成膜能力の向上が図れ、複数種類の陰極材料の同時成膜等も行える。
【００５２】
また、各磁石を形成する電磁コイルのコイル電流の向きを一定時間毎に切換えて逆にすれば、電子のドリフト方向を逆転することによって陰極材料のイオン飛着位置を周期的にずらすことができ、大面積の基材の均一蒸着等が可能になる。
【００５３】
つぎに、請求項９の真空アーク蒸着装置は、磁気フィルタの各磁石のうちの放出口に最も近い終端磁石より蒸発源側の１又は複数個の指定磁石を、ダクトの横断面に対して傾けて設置したものである。
【００５４】
また、請求項１０の真空アーク蒸着装置は、指定磁石を、ダクトの横断面に対して傾けて設置するとともに、終端磁石を、放出口の放出面に対し傾けて設置したものである。
【００５５】
したがって、請求項１，２の蒸着方法に用いられる真空アーク蒸着装置を提供することができる。
【００５６】
さらに、請求項１１の真空アーク蒸着装置は、指定磁石の設置角度又は指定磁石及び終端磁石の設置角度を可変する手段を備えたものであり、請求項３の蒸着方法を実現するものである。
【００５７】
そして、請求項９，１０又は１１の蒸着装置において、各磁石が電磁コイルからなることが実用的であり、指定磁石の設置角度又は指定磁石及び終端磁石の設置角度の自動制御手段を備えることが望ましい。
【００５８】
また、各磁石が電磁コイルからなり、指定磁石の設置角度の制御又は指定磁石及び終端磁石の設置角度の制御に連動して各磁石の電磁コイルのコイル電流を制御する手段を備えることが、成膜特性を向上する上からは、一層好ましい。
【００５９】
さらに、蒸発源が複数個であってもよく、各磁石を形成する電磁コイルのコイル電流の向きを一定時間毎に切換えて逆にする通電制御手段を備えることが、より一層好ましい。
【００６０】
【発明の実施の形態】
本発明の実施の形態につき、図１〜図８を参照して説明する。
（１形態）
まず、本発明の実施の１形態につき、図１〜図４を参照して説明する。
図１は図９に対応する真空アーク蒸着装置の平面図であり、図と同一記号は同一のものを示す。
そして、本発明はダクト９の周囲の終端磁石よりダクト９の一端側（蒸発源１１側）の１又は複数個の磁石を指定磁石とするものであり、この形態にあっては、蒸発源１１から２番目の＃２の磁石を指定磁石とする。
【００６１】
さらに、この指定磁石の電磁コイルを、図中の破線で示したダクト９の横断方向の従来コイル１４ｂでなく、ダクト９の横断面に対して所望角度に積極的に傾けた実線の電磁コイル１４ｂ′により形成する。
【００６２】
なお、図１の２点破線はダクト９の延長方向であり、横断面はそれぞれの位置でのこの延長方向に直角な面であり、湾曲部分においては横断面は曲率中心を通る法線方向の面になる。
【００６３】
そして、ダクト９の湾曲部分に位置する電磁コイル１４ｂ′も、他の電磁コイル１４ａ，１４ｃ，１４ｄと同様、図２の斜視図に示すように矩形枠状に複数ターン巻回して形成される。
【００６４】
一方、図３の（ａ）のダクト取付状態の平面図に示すように、Ｘ軸とこの軸に直角なＹ軸とがなすＸ−Ｙ平面（水平面）において、ダクト９の曲率中心を通る図中の１点鎖線がダクト９の横断面方向である。
【００６５】
また、図３の（ｂ）のダクト取付状態の右側面図に示すように、前記のＹ軸と上下方向のＺ軸とがなすＹ−Ｚ平面（垂直面）において、ダクト９の横断面は１点破線のＺ軸に平行な面である。
【００６６】
そして、電磁コイル１４ｂ′は、図３の（ａ），（ｂ）の１点鎖線の横断面に平行な破線の従来コイル１４ｂの設置状態から、Ｘ−Ｙ平面，Ｙ−Ｚ平面のいずれか一方又は両方において、適当な角度α（Ｘ−Ｙ平面），β（Ｙ−Ｚ平面）傾けた（回転した）図３の（ａ），（ｂ）の実線の状態に設置される。
【００６７】
このとき、角度α，βは事前の荷電粒子軌道解析シミュレーション及び試験蒸着等に基づき、基材６の蒸発位置が基材６の表面中心等の所期位置になるように定められる。
【００６８】
そして、例えば作業員の手作業で電磁コイル１４ｂ′のダクト９への取付け角度等が調整され、電磁コイル１４ｂ′がダクト９の横断面から最適角度α，β傾けて設置される。
【００６９】
この場合、電磁コイル１４ｂ′の発生磁場により、従来磁場１７ａを適当に補正した図１の偏向磁場１７ｂの磁気フィルタ１８ｂが形成される。
【００７０】
そして、磁気フィルタ１８ｂによって生成されたプラズマ流２０ｂの電子やイオンは、電磁コイル１４ｂ′の発生磁場により、ダクト９の湾曲等によるドリフトの影響が打消されて補正される。
【００７１】
そのため、図４の（ａ），（ｂ）の電子軌道の１例の平面図，右側面図に示すように、ダクト９を通って基材６の表面に到達する電子の軌道の中心が、ほぼ基材６表面の中心に一致するように補正され、基材６表面のイオン蒸着位置もほぼ基材６表面の中心に一致して所期位置に蒸着が行われ、成膜特性が向上する。
【００７２】
なお、図４の（ａ），（ｂ）においては、図１１の（ａ），（ｂ）と同様、実線の１つおきの＃２，＃４の２個の電磁コイル１４ｂ′，１４ｄにのみ通電している。
【００７３】
そして、ドリフト補正を一層精度よく行うため、他の電磁コイル１４ａ，１４ｃについても、必要に応じてダクト９の横断面に対して傾けて設ければよい。
【００７４】
その際、各電磁コイルのいずれか１個又は複数個を前記のＸ−Ｙ平面内で傾け、残りの電磁コイルをＹ−Ｚ平面内で傾けてドリフトを補正するようにしてもよい。
【００７５】
（他の形態）
つぎに、本発明の実施の他の形態につき、図５〜図８を参照して説明する。
図５の平面図において、図１と同一符合は同一もしくは相当するものを示し、図１と異なる点は、＃２の指定磁石をダクト９の横断面に対して傾けた電磁コイル１４ｂ′により形成するとともに、＃４の終端磁石を、放出口１３の放出面に平行な従来コイル１４ｄでなく、前記放出面に対して傾けた電磁コイル１４ｄ′により形成した点である。
【００７６】
なお、図５の場合、放出面は図１と同様にＹ−Ｚ面に平行であり電磁コイル１４ｂ′だけでなく、電磁コイル１４ｄ′も例えばＸ−Ｙ平面内，Ｙ−Ｚ平面内のいずれか一方又は両方の平面内で適当な角度傾けてダクト９に取付けられる。
【００７７】
そして、電磁コイル１４ｂ′の磁場補正により軌道修正された電子やイオンが、ダクト９から飛出すときに、電磁コイル１４ｄ′の磁場補正によって更に軌道修正され、ダクト９の湾曲に基づくドリフトの影響が一層良好に抑制される。
【００７８】
具体的には、図６の平面図に示すように、＃２の電磁コイル１４ｂ′により、電子やイオンの軌跡が、破線イから実線ロに移動してダクト９の中央寄りに修正され、＃４の電磁コイル１４ｂ′により、電子やイオンがほぼ後方に直進して基材６の表面中央に到達するようになる。
【００７９】
ところで、電磁コイル１４ｂ′，１４ｄ′は他の電磁コイル１４ａ，１４ｃと大きさが異なっていてもよく、とくに、上下方向の磁場発散を良好に抑えるため、電磁コイル１４ｄ′は他の電磁コイル１４ａ，１４ｂ′，１４ｃより大型にすることが好ましい。
【００８０】
つぎに、具体的な電子軌道解析結果について説明する。
まず、＃２の電磁コイル１４ｂ′をＸ−Ｙ面内（水平面内）で傾けた場合、＃４の電磁コイル１４ｄ′をＸ−Ｙ面内で傾けた場合、＃２の電磁コイル１４ｂ′をＸ−Ｙ面内で傾け、かつ、＃４の電磁コイル１４ｄ′をＹ−Ｚ面内（垂直面内）で傾けた場合の電子やイオンの軌跡の１例は、図７の破線ハ，１点破線ニ，実線ホそれぞれに示すようになり、＃２の電磁コイル１４ｂをＸ−Ｙ面内で傾け、かつ、＃４の電磁コイル１４ｄ′をＹ−Ｚ面内で傾けたときに、発散が抑制されるとともに上方に修正されて中央寄りになり、最も良好な補正が行われることが確かめられた。
【００８１】
また、＃２の電磁コイル１４ｂ′をＸ−Ｙ面内で１０度傾けた場合（ｉの場合）、＃４の電磁コイル１４ｄ′をＸ−Ｙ面内で１０度傾けた場合（ｉｉの場合）、＃４の電磁コイル１４ｄ′をＹ−Ｚ面内で５度傾けた場合（ｉｉｉの場合）及び＃２の電磁コイル１４ｂ′をＸ−Ｙ面内で１０度傾けて＃４の電磁コイル１４ｄ′をＹ−Ｚ面内で５度傾けた場合（ｉｖの場合）の電子やイオンの基材６の表面到達位置の中心からのＸ軸，Ｚ軸方向のずれの電子軌道解析値は、図８に示すようになった。
【００８２】
図８において、■はｉの場合、▲はｉｉの場合、●はｉｉｉの場合、×はｉｖの場合のプロット点（蒸着位置の点）であり、◆は横断面方向の電磁コイル１４ｂ，１４ｄを設けた場合の基準プロットである。
【００８３】
この図８からも明らかなように、ｉｖの場合に最も良好な成膜特性が得られることが確かめられた。
【００８４】
なお、図８において、電磁コイル１４ｂ′の通電電流は４０Ａ、電磁コイル１４ｄ′の通電電流は３０Ａとした。
【００８５】
ところで、通常は陰極材料１９を基材６表面の中央部を中心に飛着させて蒸着するように補正すればよいが、基材６によってはその表面中央部から離れた位置を中心に蒸着することが好ましい場合もあり、このような場合は、例えば電磁コイル１４ｂ′につき、その傾きの角度α，βの一方又は両方を目的に応じて設定し、基材６表面の任意の位置を中心に蒸着するようにすればよい。
【００８６】
つぎに、例えば電磁コイル１４ｂ′，１４ｄ′を傾けて設置する場合、電磁コイル１４ｂ′，１４ｄ′をＸ−Ｘ軸の平面内で回動自在に傾ける治具と、電磁コイル１４ｂ′，１４ｄ′をＺ−Ｙ軸の平面内で回動自在に傾ける治具とのいずれか一方又は両方を、電磁コイル１４ｂ′，１４ｄ′毎に、それらの設置角度を自在に可変する手段として設け、事前の試験成膜の結果に基づいて電磁コイル１４ｂ′，１４ｄ′の設置角度を初期設定したり、実際の蒸着中に電磁コイル１４ｂ′，１４ｄ′の設置角度を可変するようにしてもよい。
【００８７】
また、前記形態では各電磁コイルとしたが、これらの磁石はいわゆる永久磁石で形成してもよい。
【００８８】
さらに、基材６が大面積の場合や複数種類の陰極材料を同時に蒸着する場合等には、蒸発源１１を、例えば上下方向に複数個設ければよい。
【００８９】
つぎに、指定磁石又は指定磁石と終端磁石の設置角度は、例えば図９の制御装置１６の代わりに設けた図１，図５の制御装置２４のシーケンス制御，プログラム制御等が形成する自動制御手段により、図示省略した膜厚計による基材６表面の膜厚の計測等に基づき、事前に又は実際の成膜の進行に応じて前記の両治具を自動制御し、この自動制御によって自動設定したり成膜中に自動可変することが、実用的であり、また、成膜作業の効率化等の面からも、好ましい。
【００９０】
さらに、各磁石が電磁コイル１４ａ，１４ｂ′，１４ｃ，１４ｄ′からなる場合、制御装置２４の通電制御手段により、前記の膜厚計の計測に基づき、成膜中の電磁コイルの設置角度の制御に連動して各電磁コイルのコイル電流を制御すれば、一層精度の高い成膜が行える。
【００９１】
つぎに、制御装置２４の通電制御手段により、各電磁コイル１４ａ，１４ｂ′，１４ｃ，１４ｄ′のコイル電流の向きを一定時間毎に切換えて逆にすれば、電流方向の逆転により、磁場Ｂの勾配∇Ｂの方向は変化しないが、磁場Ｂの方向が反転して変化するため、プラズマ流２３の輸送に作用するドリフト方向が変わり、基材６の表面への陰極材料１９の飛着方向が変化して膜厚分布の一層の均一化を図ることができ、成膜特性が一層向上する。
【００９２】
また、各電磁コイル１４ａ，１４ｂ′，１４ｃ，１４ｄ′のコイル電流を交流電源から得るようにすれば、前記の通電制御手段による切換えを行うことなく、各電磁コイルの電流方向を一定時間毎に逆転することができる。
【００９３】
つぎに、前記形態においては、ダクト９を断面矩形としたが、ダクト９は断面が円形，楕円形等であってもよく、この場合、ダクト９の断面形状に応じて各磁石の断面も円形，楕円形等にすることが好ましい。
【００９４】
また、前記形態においては、１個のダクト９を真空容器２に接続して真空アーク蒸着装置を形成したが、真空容器２に複数のダクトを接続し、各ダクトの終端磁石を、各ダクトの放出口の放出面に対して、それぞれ傾けるようにしてもよい。
【００９５】
さらに、前記形態では説明を簡単にするため、成膜室１内に、１個のホルダ５を設け、１個の基材６を蒸着して成膜するようにしたが、例えば、前記公報に記載のアーク式イオンブレーディング装置のように、成膜室内に円筒形の回転式のホルダを設け、このホルダの各面に基材を保持して複数の基材の真空アーク蒸着を行う場合にも、本発明は同様に適用することができる。
【００９６】
つぎに、終端磁石は、放出口１３と基材６の距離が近いなど成膜条件等によっては、終端磁石を他の磁石より小さくして良好な成膜特性を得ることができる場合もあり、このような場合には、終端磁石を他の磁石より小さくしてもよい。
【００９７】
また、前記形態では湾曲したダクト９を用いた場合について説明したが、ダクト９の代わりに屈曲したダクトを用いた場合にも、本発明は同様に適用することができる。
【００９８】
【発明の効果】
本発明は、以下に記載する効果を奏する。
まず、請求項１の真空アーク蒸着方法の場合、磁気フィルタ１８ｂを形成する各磁石のうちの終端磁石（電磁コイル１４ｄ）より蒸発源１１側の１又は複数個の磁石（電磁コイル１４ｂ′）が、ダクト９の横断面に対して積極的に傾けてダクト９の周囲に設けられ、この場合、ダクト９の横断面に平行に設けられる従来方法とは発生する偏向磁場方向が異なり、傾ける角度を適当に設定することにより、電子やプラズマ流から引出されたイオンの飛行方向を修正してダクト９の磁場等に基づくドリフトを抑制し、陰極材料の基材６蒸着位置がドリフトの影響を極力受けないようにして基材６の表面に均一な薄膜を成膜することができ、成膜特性を向上することができる。
【００９９】
つぎに、請求項２の真空アーク蒸着方法の場合は、指定磁石（電磁コイル１４ｂ′）をダクト９の横断面に対して傾けて設置するとともに、終端磁石（電磁コイル１４ｄ′）を放出口１３の放出面に対して傾けて設置したため、終端磁石の発生磁場も、従来の終端磁石を放出面に平行に設置する場合と異なり、指定磁石及び終端磁石の角度を適当に設定することにより、指定磁石及び終端磁石の発生磁場で電子やイオンの飛行方向を修正して前記ドリフトを抑制することができ、成膜特性を一層向上することができる。
【０１００】
つぎに、請求項３の真空アーク蒸着方法は、指定磁石の設置角度又は指定磁石及び終端磁石の設置角度を可変自在にしたため、指定磁石の設置角度又は指定磁石及び終端磁石の設置角度を成膜前及び成膜中に自在に変えることができ、種々の成膜特性の蒸着薄膜を、所期の特性で自在に成膜することができる。
【０１０１】
そして、請求項１，２，３の真空アーク蒸着方法において、各磁石は電磁コイル１４ａ，１４ｂ′，１４ｃ，１４ｄ，１４ｄ′からなることが実用的で好ましく、指定磁石の設置角度又は指定磁石及び終端磁石の設置角度は、自動制御されることが好ましい。
【０１０２】
さらに、各磁石が電磁コイル１４ａ〜１４ｄ′からなり、指定磁石の設置角度の制御又は指定磁石及び終端磁石の設置角度の制御に連動して各磁石の電磁コイル１４ａ〜１４ｄ′のコイル電流を制御することが、成膜特性上からは一層好ましい。
【０１０３】
つぎに、蒸発源１１を複数個にすれば、成膜能力の一層の向上を図ることができ、複数種類の陰極材料の同時成膜等も行える。
【０１０４】
また、各磁石を形成する電磁コイル１４ａ〜１４ｄ′のコイル電流の向きを一定時間毎に切換えて逆にすれば、陰極材料１９のイオンの飛着位置を周期的にずらすことができ、大面積の基材６の均一な蒸着成膜を行うことができる。
【０１０５】
つぎに、請求項９〜１６の真空アーク蒸着装置は、前記の各真空アーク蒸着方法を実現する具体的な装置を提供することができる。
【図面の簡単な説明】
【図１】本発明の実施の１形態の真空アーク蒸着装置の平面図である。
【図２】図１の指定磁石としての電磁コイルの斜視図である。
【図３】（ａ），（ｂ）は図２の電磁コイルの傾きを説明する平面図，右側面図である。
【図４】（ａ），（ｂ）は図１の電子到達位置を説明する平面図，右側面図である。
【図５】本発明の実施の他の形態の真空アーク蒸着装置の平面図である。
【図６】図５の電子軌道を説明する平面図である。
【図７】図５の電子軌道を説明する右側面図である。
【図８】基板表面の電子到達位置の説明図である。
【図９】従来装置の平面図である。
【図１０】（ａ），（ｂ）は図９の従来装置の発散磁場説明図の平面図，右側面図である。
【図１１】図９の従来装置の電子到達位置を説明する平面図，右側面図である。
【図１２】図９の従来装置の磁場勾配のドリフト説明図である。
【符号の説明】
１　成膜室
６　基材
９　ダクト
１１　蒸発源
１３　放出口
１４ａ〜１４ｄ，１４ｂ′，１４ｄ′　電磁コイル
１７ａ〜１７ｃ　偏向磁場
１８ａ〜１８ｃ　磁気フィルタ
１９　陰極材料
２０ａ〜２０ｃ　プラズマ流[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a vacuum arc evaporation method used for forming a thin film for improving abrasion resistance of a base material such as an automobile part, a machine part, a tool, and a mold, and an apparatus therefor.
[0002]
[Prior art]
In general, vacuum arc deposition is a simple method of forming a thin film in which an arc discharge is generated between a cathode and an anode to evaporate a cathode material and deposit the material on a base material, and is characterized by excellent productivity.
[0003]
However, from the cathode material (or from the cathode depending on the discharge state), large clusters of coarse particles (droplets) having a diameter of several μm fly out, and the droplets adhere to the base material, resulting in poor film formation characteristics. It is known to go down.
[0004]
In recent years, a magnetic field has been generated by a magnet such as an electromagnetic coil in order to prevent the deterioration of the film forming characteristics due to the droplet, and the droplet is removed by the magnetic field to transport only the plasma flow along the magnetic field toward the substrate. It has been proposed that the droplets be dissolved by converging the plasma with the magnetic field to increase the density.
[0005]
A conventional vacuum arc deposition method for removing only droplets and transporting only the plasma flow toward the substrate is described in Japanese Patent Application Laid-Open No. 2001-59165 (C23C 14/32) and the like, which have been filed by the present applicant. As shown in FIG.
[0006]
In the conventional apparatus shown in FIG. 9, the metal grounded vacuum vessel 2 forming the film forming chamber 1 is evacuated from a right exhaust port 3 by a vacuum exhaust device (not shown), and from a gas inlet port 4 on the left side. In some cases, an inert gas such as an argon gas or a reactive gas is introduced.
[0007]
In addition, the above publication discloses a structure in which a plurality of substrates are attached to a cylindrical holder of the film forming chamber 1, but in FIG. A single flat plate-shaped holder 5 is provided at the center so that its surface faces forward and is rotatable, and the base material 6 is detachably held on the surface side of this holder 5.
[0008]
The substrate 6 is connected to a cathode of a bias power supply 7 via a holder 5, and the substrate 6 is subjected to DC pulse bias to the vacuum vessel 2 typically at −0.5 kV to −5.0 kV.
[0009]
In the figure, reference numeral 8 denotes an insulator for the rear plate 2 'of the vacuum vessel 2 for insulating the cathode of the bias power supply 7.
[0010]
Next, a metal duct 9 having a rectangular cross section which is curved in a substantially “H” shape is provided in front of the vacuum vessel 2, and this duct 9 is provided at the center of a grounded end plate 9 ′ at one front end. An evaporation source 11 is provided through an insulator 10, and a cathode of an arc power supply 12 of about several tens of volts grounded to the anode is connected to the evaporation source 11, the duct 9 forms an anode, and the evaporation source 11 forms a cathode.
[0011]
Note that, instead of using the duct 9 as an anode, an anode electrode may be provided separately from the duct 9.
[0012]
The evaporation source 11 also includes a water cooling mechanism, a vacuum seal mechanism, a trigger mechanism, and the like, which are not shown.
[0013]
Further, the other end of the duct 9 is attached to the center of the front plate 2 ″ of the vacuum vessel 2, and the discharge port 13 at the other end of the duct 9 communicates with the film forming chamber 1. The center of the (horizontal direction) emission surface overlaps the centers of the holder 5 and the base material 6.
[0014]
Next, as magnets surrounding the duct 9 at a plurality of locations between both ends of the duct 9, for example, the electromagnetic coils 14 a, 14 b, 14 c, # 1, # 2, # 3, # 4 in order from one end of the duct 9. 14d is provided.
[0015]
At this time, the electromagnetic coil 14d as the # 4 end magnet closest to the discharge port 13 and the electromagnetic coils 14a to 14c of the other magnets of # 1 to # 3 are each composed of a plurality of turns of coils and have the same size (dimensions). ).
[0016]
Further, the electromagnetic coil 14d is provided substantially parallel to the cross section of the duct 9 perpendicular to the direction of extension of the two-dot chain line of the duct 9, is parallel to the emission surface of the emission port 13, and each of the remaining electromagnetic coils 14 At a position substantially parallel to the cross section of the duct 9.
[0017]
Each of the electromagnetic coils 14a to 14d is connected in series between both ends of the output of a coil power supply 15 as a current source, and the current control of the control device 16 controls the energization of each of the electromagnetic coils 14a to 14d. By the energization of the electromagnetic coils 14a to 14d, a deflection magnetic field 17a of a solid arrow loop in the figure curved along the duct 9 is formed, and this magnetic field 17a forms a magnetic filter 18a.
[0018]
Then, a vacuum arc discharge between the duct 9 serving as an anode and the evaporation source 11 serving as a cathode causes the evaporation source 11 to use a single metal such as Ti, Cr, Mo, Ta, W, Al, or Cu, or a metal such as TiAl. The conductive cathode material 19 such as an alloy or C evaporates.
[0019]
Further, a plasma flow 20a indicated by a dashed arrow containing electrons generated by the arc discharge and ions of the cathode material 19 is transported from one end of the duct 9 to the outlet 13 at the other end along the deflection magnetic field 17a.
[0020]
At this time, the droplets ejected from the evaporation source 11 are electrically neutral or negatively charged in the plasma, but in any case, the mass is extremely large, so that the deflection magnetic field 17a Irrespective of the height of the base member 6 and collides with the inner wall of the duct 9 and is removed, and does not reach the surface of the base member 6 or the holder 5.
[0021]
Then, the ions of the cathode material 19 reaching the emission port 13 are drawn out to the film forming chamber 1 and fly on the surface of the base material 6 based on a large negative potential bias of the base material 6 by the bias power supply 7. A deposition film of the cathode material 19 is formed on the surface of the material 6.
[0022]
When a reactive gas is introduced into the film forming chamber 1 from the gas inlet 4 in conjunction with the extraction of the ions of the cathode material 19, the gas reacts with the ions of the cathode material 19, and For example, a metal compound thin film such as titanium carbide or titanium nitride is deposited.
[0023]
[Problems to be solved by the invention]
In the vacuum arc vapor deposition of the conventional apparatus shown in FIG. 9, the electromagnetic coil 14d of the terminating magnet is provided not only in parallel to the cross section of the duct 9 and in parallel to the emission surface of the emission port 13 and the base material 6, but also to other electromagnetic fields. The coils 14a to 14c are also provided substantially parallel to the cross section of the duct 9 at each position.
[0024]
On the other hand, considering the state in which electrons are transported in a uniform magnetic field, as is well known, an electron having a charge q receives a Lorentz force F expressed by the following equation (1).
[0025]
(Equation 1)
F = q · (v × B), (v: velocity in the direction perpendicular to the magnetic field of the electron, B: magnetic field, ×: vector product (outer product) operator, ·: inner product operator)
[0026]
Then, due to the Lorentz force F, the electrons proceed along the lines of magnetic force of the deflecting magnetic field 17 a while rotating in a spiral, and the ions of the cathode material 19 travel in the duct 9 so as to be pulled by the electrons and reach the emission port 13. Be transported.
[0027]
Further, in the vicinity of the electromagnetic coil 14d of the terminal magnet, a diverging magnetic field is formed as shown by the magnetic force lines indicated by solid arrows in FIGS. 10 (a) and 10 (b), and the electrons and ions reaching the emission port 13 follow this diverging magnetic field. To fly.
[0028]
FIGS. 10A and 10B show the case where only two electromagnetic coils 14b and 14d of # 2 and # 4 of the four electromagnetic coils 14a to 14d of FIG. 9 are energized. It is the top view which shows a magnetic force line, and a right view.
[0029]
The flight trajectories of the electrons based on the magnetic force lines in FIGS. 10A and 10B are as shown by the solid lines in the plan views and the right side views in FIGS. 11A and 11B.
[0030]
That is, due to the divergent magnetic field, the position at which the electrons reach the base material is deflected in the left-right direction from the center of the base material 6 according to the direction of the curvature, and diverges in the vertical direction (vertical direction).
[0031]
As shown in FIG. 12, an outward centrifugal force Fcf and an inward magnetic field gradient (gradient) ∇B act on electrons in a vacuum bending magnetic field such as the magnetic field 17a, as shown in FIG. Then, a drift shown by the following equation 2 occurs.
[0032]
(Equation 2)
v (R) + v (∇B ) = (m / q) · (Rc × B) / (Rc 2 · B 2) · (v ( ^{||) + v (⊥) 2/} 2), (v (R): Fcf velocity drift, v (∇B): velocity drift of (∇B), m: mass, Rc: radius of curvature at the electron position indicated by x in FIG. 12, v (‖): velocity in B direction, v ( ⊥): Speed perpendicular to B (normal direction)
[0033]
The outer product Rc × B in the equation (2) is a vector in the direction in which the right-hand thread advances when Rc is rotated so as to overlap B.
[0034]
When three evaporation sources 11 are provided in the up-down direction, and the respective evaporation sources 11 form an upper cathode, a center cathode, and a lower cathode in order from the top, the electrons of the upper cathode mainly cause the upward bending of the magnetic field B. , The electrons of the lower cathode are mainly affected by the downward bending of the magnetic field B, and the drift directions of the electrons of the upper and lower cathodes are positive and negative of the coil current when the direction from the cathode to the substrate 6 is viewed. According to the reverse (clockwise, counterclockwise), the results are as shown in Table 1 below, which is symmetric with respect to the vertical direction of the cathode and the forward and reverse of the coil current.
[0035]
[Table 1]

[0036]
Since the ions in the plasma 20a tend to fly by being pulled by the electrons, the position of ion deposition similarly deviates from the expected position due to the drift effect.
[0037]
Therefore, in the conventional vacuum arc vapor deposition in which droplets are removed by the magnetic filter 18, it is difficult to deposit a thin film of the cathode material 19 at a desired position on the substrate 6 to form a film having an intended thickness. However, there is a problem that it cannot be said that it is sufficient to obtain desired film forming characteristics such as uniform film forming characteristics.
[0038]
A similar problem occurs in this type of vacuum arc vapor deposition in which droplets are removed by the action of a magnetic field filter regardless of the number of evaporation sources 11 or the like.
[0039]
When the duct 9 and the electromagnetic coils 14a to 14d are rectangular in cross section, the gradient ΔB of the magnetic field becomes larger toward the outside from the center based on the magnetic field characteristics of the rectangular electromagnetic coils 14a to 14d. The drift speed in the downward direction increases, and the divergence in the downward direction increases.
[0040]
An object of the present invention is to improve the film-forming characteristics of a base material by focusing on the drift caused by the magnetic field of the magnet on one end side (evaporation source side) of the duct 9 from the end magnet (electromagnetic coil 14d) of the magnetic filter. It is another object of the present invention to freely control the position at which the ions of the cathode material reach the base material to further improve the film forming characteristics.
[0041]
[Means for Solving the Problems]
In order to solve the above-mentioned problems, a vacuum arc vapor deposition method according to claim 1 of the present invention is directed to a method of specifying one or more of the magnets forming the magnetic filter, which is closer to the evaporation source side than the terminal magnet closest to the discharge port. The magnet is installed at an angle with respect to the cross section of the duct, and the flying direction of ions is controlled by the magnetic field generated by the designated magnet.
[0042]
In this case, one or a plurality of magnets other than the end magnet among the magnets forming the magnetic filter are provided around the duct so as to be positively inclined with respect to the cross section of the duct, and the deflection magnetic field generated by them is generated. The direction of the generated magnetic field is different from the direction of the generated magnetic field of the conventional method provided substantially parallel to the cross section of the duct, and by appropriately setting the angle of inclination, the flight direction of the electrons extracted from the electron or plasma flow is corrected. The drift is suppressed, and the deposition position of the base material of the cathode material is hardly affected by the drift, so that the film forming characteristics are improved.
[0043]
Next, in the vacuum arc vapor deposition method of claim 2, similarly to claim 1, the designated magnet is installed inclined with respect to the cross section of the duct, and the terminal magnet is installed inclined with respect to the discharge surface of the discharge port. ,
The flight direction of ions of the cathode material is controlled by the magnetic field generated by the designated magnet and the terminating magnet.
[0044]
In this case, the generated magnetic field of the terminal magnet is also different from the case where the conventional terminal magnet is installed in parallel with the emission surface.
[0045]
By appropriately setting the angles of the designated magnet and the terminating magnet, the flying directions of electrons and ions are corrected by the magnetic field generated by the designated magnet and the terminating magnet, thereby suppressing the drift and further improving the film forming characteristics.
[0046]
Next, in the vacuum arc vapor deposition method of claim 3, the installation angle of the designated magnet or the installation angles of the designated magnet and the terminal magnet are made variable.
[0047]
Therefore, the installation angle of the designated magnet or the installation angle of the designated magnet and the terminal magnet can be freely changed before and during film formation, and a deposited thin film having various film formation characteristics can be freely formed with desired characteristics. Can be membrane.
[0048]
In the vacuum arc vapor deposition method of the first, second, and third aspects, it is practically preferable that each magnet is formed of an electromagnetic coil.
[0049]
Preferably, the installation angle of the designated magnet or the installation angles of the designated magnet and the terminal magnet are automatically controlled.
[0050]
Furthermore, since each magnet is composed of an electromagnetic coil, the coil current of the electromagnetic coil of each magnet is controlled in conjunction with the control of the installation angle of the designated magnet or the control of the installation angle of the designated magnet and the terminating magnet. Is more preferable.
[0051]
Next, if a plurality of evaporation sources are used, the film forming ability can be improved, and a plurality of kinds of cathode materials can be formed simultaneously.
[0052]
In addition, if the direction of the coil current of the electromagnetic coil forming each magnet is switched at regular time intervals and reversed, the ion drift position of the cathode material can be periodically shifted by reversing the electron drift direction. In addition, uniform deposition of a large-area substrate can be performed.
[0053]
Next, in the vacuum arc vapor deposition apparatus of claim 9, one or more designated magnets closer to the evaporation source than the terminal magnet closest to the discharge port among the magnets of the magnetic filter are inclined with respect to the cross section of the duct. It was installed.
[0054]
In a vacuum arc evaporation apparatus according to a tenth aspect, the designated magnet is installed to be inclined with respect to the cross section of the duct, and the terminal magnet is installed to be inclined with respect to the emission surface of the emission port.
[0055]
Therefore, it is possible to provide a vacuum arc vapor deposition apparatus used in the vapor deposition method according to claims 1 and 2.
[0056]
Further, the vacuum arc vapor deposition apparatus according to claim 11 is provided with means for changing the installation angle of the designated magnet or the installation angles of the designated magnet and the terminal magnet, and realizes the vapor deposition method of claim 3.
[0057]
In the vapor deposition apparatus according to the ninth, tenth, or eleventh aspect, it is practical that each magnet is formed of an electromagnetic coil, and the apparatus is provided with automatic control means for setting the installation angle of the designated magnet or the installation angles of the designated magnet and the terminal magnet. desirable.
[0058]
Further, each magnet is composed of an electromagnetic coil, and means for controlling the coil current of the electromagnetic coil of each magnet in conjunction with control of the installation angle of the designated magnet or control of the installation angle of the designated magnet and the terminal magnet is provided. It is more preferable from the viewpoint of improving film characteristics.
[0059]
Further, a plurality of evaporation sources may be provided, and it is still more preferable to include an energization control means for switching the direction of the coil current of the electromagnetic coil forming each magnet at regular intervals to reverse the direction.
[0060]
BEST MODE FOR CARRYING OUT THE INVENTION
An embodiment of the present invention will be described with reference to FIGS.
(1 form)
First, an embodiment of the present invention will be described with reference to FIGS.
FIG. 1 is a plan view of a vacuum arc evaporation apparatus corresponding to FIG. 9, and the same symbols as those in FIG.
According to the present invention, one or more magnets on one end side (evaporation source 11 side) of the duct 9 with respect to the terminal magnet around the duct 9 are designated as the designated magnets. The second magnet # 2 is designated as the designated magnet.
[0061]
Further, the electromagnetic coil of the designated magnet is not a conventional coil 14b in a direction transverse to the duct 9 shown by a broken line in the figure, but a solid line electromagnetic coil 14b which is positively inclined at a desired angle with respect to the cross section of the duct 9. '.
[0062]
Note that the two-dot dashed line in FIG. 1 is the extension direction of the duct 9, the cross section is a plane perpendicular to this extension direction at each position, and the cross section of the curved portion is the normal direction passing through the center of curvature. Face.
[0063]
The electromagnetic coil 14b 'located at the curved portion of the duct 9 is formed by winding a plurality of turns in a rectangular frame shape as shown in the perspective view of FIG. 2, similarly to the other electromagnetic coils 14a, 14c, and 14d.
[0064]
On the other hand, as shown in the plan view of the duct mounting state in FIG. 3A, a diagram passing through the center of curvature of the duct 9 in an XY plane (horizontal plane) formed by the X axis and the Y axis perpendicular to this axis. The alternate long and short dash line in the drawing is the direction of the cross section of the duct 9.
[0065]
Further, as shown in the right side view of the duct mounting state in FIG. 3B, the cross section of the duct 9 is a YZ plane (vertical plane) formed by the Y axis and the vertical Z axis. This is a plane parallel to the one-dot broken line Z axis.
[0066]
Then, the electromagnetic coil 14b 'is moved to one of the XY plane and the YZ plane from the installation state of the conventional coil 14b indicated by a broken line parallel to the dashed line cross section of FIGS. 3 (a) and 3 (b). At one or both sides, it is installed in the state of the solid lines of FIGS. 3A and 3B in FIG. 3 inclined (rotated) at appropriate angles α (XY plane) and β (YZ plane).
[0067]
At this time, the angles α and β are determined based on a charged particle trajectory analysis simulation and a test deposition in advance so that the evaporation position of the base material 6 is a predetermined position such as the center of the surface of the base material 6.
[0068]
Then, for example, the angle at which the electromagnetic coil 14b 'is attached to the duct 9 and the like are adjusted manually by a worker, and the electromagnetic coil 14b' is installed at an optimum angle α, β from the cross section of the duct 9.
[0069]
In this case, the magnetic filter 18b of the deflection magnetic field 17b of FIG. 1 in which the conventional magnetic field 17a is appropriately corrected is formed by the magnetic field generated by the electromagnetic coil 14b '.
[0070]
Then, electrons and ions of the plasma flow 20b generated by the magnetic filter 18b are corrected by the magnetic field generated by the electromagnetic coil 14b 'so as to cancel the influence of drift due to the curvature of the duct 9 and the like.
[0071]
Therefore, as shown in the plan view and the right side view of an example of the electron trajectory in FIGS. 4A and 4B, the center of the trajectory of the electron reaching the surface of the base material 6 through the duct 9 is: Correction is performed so that the center substantially coincides with the center of the surface of the substrate 6, and the ion deposition position on the surface of the substrate 6 substantially coincides with the center of the surface of the substrate 6, and vapor deposition is performed at a desired position, thereby improving the film forming characteristics. .
[0072]
In FIGS. 4 (a) and 4 (b), as in FIGS. 11 (a) and 11 (b), every other electromagnetic coil 14b 'and 14d of # 2 and # 4 on the solid line Only energized.
[0073]
Then, in order to perform drift correction with higher accuracy, the other electromagnetic coils 14a and 14c may be provided to be inclined with respect to the cross section of the duct 9 as necessary.
[0074]
At this time, any one or more of the electromagnetic coils may be inclined in the XY plane, and the remaining electromagnetic coils may be inclined in the YZ plane to correct the drift.
[0075]
(Other forms)
Next, another embodiment of the present invention will be described with reference to FIGS.
In the plan view of FIG. 5, the same reference numerals as those in FIG. 1 denote the same or corresponding parts, and the difference from FIG. 1 is that the designated magnet # 2 is formed by an electromagnetic coil 14b 'inclined with respect to the cross section of the duct 9. In addition, the # 4 terminal magnet is formed not by the conventional coil 14d parallel to the emission surface of the emission port 13 but by the electromagnetic coil 14d 'inclined with respect to the emission surface.
[0076]
In the case of FIG. 5, the emission surface is parallel to the YZ plane similarly to FIG. 1, and not only the electromagnetic coil 14b 'but also the electromagnetic coil 14d' can be in either the XY plane or the YZ plane. It is attached to the duct 9 at an appropriate angle in one or both planes.
[0077]
When the electrons and ions whose trajectories have been corrected by the magnetic field correction of the electromagnetic coil 14b 'fly out of the duct 9, the trajectories are further corrected by the magnetic field correction of the electromagnetic coil 14d', and the influence of drift due to the curvature of the duct 9 is reduced. It is better suppressed.
[0078]
Specifically, as shown in the plan view of FIG. 6, the trajectory of electrons and ions moves from the dashed line A to the solid line B and is corrected to the center of the duct 9 by the # 2 electromagnetic coil 14b '. The fourth electromagnetic coil 14 b ′ allows electrons and ions to travel substantially straight back and reach the center of the surface of the base material 6.
[0079]
Incidentally, the electromagnetic coils 14b 'and 14d' may be different in size from the other electromagnetic coils 14a and 14c. In particular, in order to suppress the vertical magnetic field divergence well, the electromagnetic coil 14d 'is , 14b ', 14c.
[0080]
Next, a specific electron orbit analysis result will be described.
First, if the # 2 electromagnetic coil 14b 'is tilted in the XY plane (horizontal plane), if the # 4 electromagnetic coil 14d' is tilted in the XY plane, the # 2 electromagnetic coil 14b ' One example of the trajectories of electrons and ions when the # 4 electromagnetic coil 14d 'is tilted in the YZ plane (vertical plane) when tilted in the XY plane is shown by broken lines C and 1 in FIG. When the electromagnetic coil 14b of # 2 is tilted in the XY plane and the electromagnetic coil 14d 'of # 4 is tilted in the YZ plane, divergence is obtained as shown by the dotted broken line d and the solid line E, respectively. Was suppressed and corrected upward toward the center, confirming that the best correction was performed.
[0081]
When the # 2 electromagnetic coil 14b 'is tilted 10 degrees in the XY plane (in the case of i), when the # 4 electromagnetic coil 14d' is tilted 10 degrees in the XY plane (in the case of ii) ), When the # 4 electromagnetic coil 14d 'is tilted 5 degrees in the YZ plane (in the case of iii), and when the # 2 electromagnetic coil 14b' is tilted 10 degrees in the XY plane, the # 4 electromagnetic coil When 14d 'is inclined 5 degrees in the YZ plane (in the case of iv), the electron trajectory analysis value of the deviation of the electrons and ions in the X-axis and Z-axis directions from the center of the surface arrival position of the substrate 6 is As shown in FIG.
[0082]
In FIG. 8, Δ indicates a plot point (point of a deposition position) in the case of i, ▲ indicates a case of ii, ● indicates a case of iii, X indicates a point of deposition (point of vapor deposition position), and Δ indicates electromagnetic coils 14b and 14d in the cross-sectional direction. 7 is a reference plot in a case where is provided.
[0083]
As is clear from FIG. 8, it was confirmed that the best film forming characteristics were obtained in the case of iv.
[0084]
In FIG. 8, the current supplied to the electromagnetic coil 14b 'was set to 40A, and the current supplied to the electromagnetic coil 14d' was set to 30A.
[0085]
By the way, it is usually sufficient to correct the cathode material 19 so that the cathode material 19 is deposited so as to fly around the center of the surface of the base material 6. However, depending on the base material 6, the deposition is performed at a position away from the center of the surface. In such a case, for example, one or both of the inclination angles α and β of the electromagnetic coil 14 b ′ are set according to the purpose, and an arbitrary position on the surface of the base material 6 is centered. What is necessary is just to vapor-deposit.
[0086]
Next, for example, when installing the electromagnetic coils 14b 'and 14d' at an angle, a jig for tilting the electromagnetic coils 14b 'and 14d' so as to be rotatable in the plane of the XX axis, and the electromagnetic coils 14b 'and 14d' And / or a jig for tilting freely in the plane of the Z-Y axis is provided for each of the electromagnetic coils 14b 'and 14d' as means for freely changing their installation angle. The installation angles of the electromagnetic coils 14b 'and 14d' may be initialized based on the results of the test film formation, or the installation angles of the electromagnetic coils 14b 'and 14d' may be changed during actual deposition.
[0087]
In the above embodiment, each of the electromagnetic coils is used. However, these magnets may be formed of so-called permanent magnets.
[0088]
Further, when the substrate 6 has a large area or when a plurality of types of cathode materials are simultaneously deposited, a plurality of evaporation sources 11 may be provided, for example, in the vertical direction.
[0089]
Next, the installation angle of the designated magnet or the designated magnet and the terminating magnet is determined, for example, by automatic control means formed by sequence control, program control, or the like of the control device 24 of FIGS. 1 and 5 provided in place of the control device 16 of FIG. Based on the measurement of the film thickness on the surface of the substrate 6 by a film thickness meter (not shown), both the jigs are automatically controlled in advance or in accordance with the actual progress of the film formation, and are automatically set by this automatic control. It is practical to automatically change the thickness during film formation, and it is also preferable from the viewpoint of improving the efficiency of the film formation work.
[0090]
Further, when each magnet is composed of the electromagnetic coils 14a, 14b ', 14c and 14d', the energization control means of the control device 24 controls the installation angle of the electromagnetic coil during film formation based on the measurement of the film thickness meter. If the coil current of each electromagnetic coil is controlled in conjunction with the above, film formation with higher accuracy can be performed.
[0091]
Next, if the direction of the coil current of each of the electromagnetic coils 14a, 14b ', 14c, and 14d' is switched at regular intervals and reversed by the energization control means of the control device 24, the reversal of the current direction causes the magnetic field B to change. Although the direction of the gradient ∇B does not change, the direction of the magnetic field B changes by reversing, so that the drift direction acting on the transport of the plasma flow 23 changes, and the flying direction of the cathode material 19 to the surface of the substrate 6 changes. By changing the thickness, the film thickness distribution can be made more uniform, and the film forming characteristics can be further improved.
[0092]
If the coil current of each of the electromagnetic coils 14a, 14b ', 14c, and 14d' is obtained from an AC power supply, the current direction of each of the electromagnetic coils is changed at regular time intervals without switching by the above-described energization control means. Can be reversed.
[0093]
Next, in the above embodiment, the duct 9 has a rectangular cross section, but the duct 9 may have a circular or elliptical cross section. In this case, the cross section of each magnet is also circular according to the cross sectional shape of the duct 9. , Ellipse, etc.
[0094]
Further, in the above-described embodiment, a single duct 9 is connected to the vacuum vessel 2 to form a vacuum arc vapor deposition apparatus. However, a plurality of ducts are connected to the vacuum vessel 2, and a terminating magnet of each duct is connected to each duct. You may make it each incline with respect to the discharge surface of a discharge port.
[0095]
Further, in the above-described embodiment, for the sake of simplicity, one holder 5 is provided in the film forming chamber 1 and one substrate 6 is formed by vapor deposition. As in the case of the described arc ion braiding apparatus, when a cylindrical rotary holder is provided in the film forming chamber, and the base material is held on each surface of the holder to perform vacuum arc evaporation of a plurality of base materials. However, the present invention can be similarly applied.
[0096]
Next, depending on the film forming conditions such as the distance between the discharge port 13 and the base material 6 being short, the terminal magnet may be smaller than the other magnets to obtain good film forming characteristics, depending on the film forming conditions. In such a case, the end magnet may be smaller than the other magnets.
[0097]
In the above embodiment, the case where the curved duct 9 is used has been described. However, the present invention can be similarly applied to a case where a bent duct is used instead of the duct 9.
[0098]
【The invention's effect】
The present invention has the following effects.
First, in the case of the vacuum arc vapor deposition method of claim 1, one or a plurality of magnets (electromagnetic coil 14b ') closer to the evaporation source 11 than the terminal magnet (electromagnetic coil 14d) of the magnets forming the magnetic filter 18b. Is provided around the duct 9 so as to be positively inclined with respect to the cross section of the duct 9. In this case, the direction of the deflection magnetic field generated differs from the conventional method provided in parallel with the cross section of the duct 9. By appropriately setting, the flight direction of the electrons extracted from the electrons and the plasma flow is corrected to suppress the drift based on the magnetic field of the duct 9, and the deposition position of the base material 6 of the cathode material is affected by the drift as much as possible. In this way, a uniform thin film can be formed on the surface of the base material 6, and the film forming characteristics can be improved.
[0099]
Next, in the case of the vacuum arc evaporation method of claim 2, the designated magnet (electromagnetic coil 14b ') is installed at an angle to the cross section of the duct 9, and the terminating magnet (electromagnetic coil 14d') is discharged from the discharge port 13. Because the magnetic field generated by the terminating magnet is different from the conventional case where the terminating magnet is installed in parallel to the emitting surface, the designated magnet and the angle of the terminating magnet are set appropriately to specify the magnetic field generated by the terminating magnet. The drift can be suppressed by correcting the flight direction of electrons or ions by the magnetic field generated by the magnet and the terminal magnet, and the film forming characteristics can be further improved.
[0100]
Next, in the vacuum arc vapor deposition method of claim 3, since the installation angle of the designated magnet or the installation angle of the designated magnet and the terminal magnet is made variable, the deposition angle of the designated magnet or the installation angle of the designated magnet and the terminal magnet is formed. It can be changed freely before and during film formation, and a deposited thin film having various film formation characteristics can be freely formed with desired characteristics.
[0101]
In the vacuum arc vapor deposition method according to claims 1, 2, and 3, it is practically and preferably that each magnet comprises an electromagnetic coil 14a, 14b ', 14c, 14d, 14d'. It is preferable that the installation angle of the terminal magnet is automatically controlled.
[0102]
Furthermore, each magnet is composed of electromagnetic coils 14a to 14d ', and controls the coil current of the electromagnetic coils 14a to 14d' of each magnet in conjunction with the control of the installation angle of the designated magnet or the control of the installation angle of the designated magnet and the terminal magnet. Is more preferable from the viewpoint of film forming characteristics.
[0103]
Next, if a plurality of evaporation sources 11 are used, the film forming ability can be further improved, and a plurality of kinds of cathode materials can be formed simultaneously.
[0104]
In addition, if the direction of the coil current of the electromagnetic coils 14a to 14d 'forming each magnet is switched at regular intervals and reversed, the position at which ions of the cathode material 19 fly can be shifted periodically, and a large area can be obtained. A uniform vapor deposition of the base material 6 can be performed.
[0105]
Next, the vacuum arc vapor deposition apparatus according to claims 9 to 16 can provide a specific apparatus for realizing each of the above vacuum arc vapor deposition methods.
[Brief description of the drawings]
FIG. 1 is a plan view of a vacuum arc evaporation apparatus according to one embodiment of the present invention.
FIG. 2 is a perspective view of an electromagnetic coil as a designated magnet of FIG.
FIGS. 3A and 3B are a plan view and a right side view for explaining the inclination of the electromagnetic coil of FIG. 2;
FIGS. 4A and 4B are a plan view and a right side view illustrating an electron arrival position in FIG. 1;
FIG. 5 is a plan view of a vacuum arc evaporation apparatus according to another embodiment of the present invention.
FIG. 6 is a plan view illustrating an electron trajectory in FIG.
FIG. 7 is a right side view illustrating the electron orbit of FIG. 5;
FIG. 8 is an explanatory diagram of an electron arrival position on a substrate surface.
FIG. 9 is a plan view of a conventional device.
10 (a) and (b) are a plan view and a right side view of a divergent magnetic field explanatory diagram of the conventional apparatus of FIG.
11A and 11B are a plan view and a right side view illustrating an electron arrival position of the conventional device of FIG.
FIG. 12 is an explanatory diagram of a drift of a magnetic field gradient of the conventional device of FIG. 9;
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Film-forming chamber 6 Substrate 9 Duct 11 Evaporation source 13 Outlet 14a-14d, 14b ', 14d' Electromagnetic coil 17a-17c Deflection magnetic field 18a-18c Magnetic filter 19 Cathode material 20a-20c Plasma flow

Claims (16)

From the evaporation source located at one end of the curved or bent duct, the cathode material is evaporated by arc discharge,
Providing a magnet surrounding the duct at each of a plurality of locations of the duct to form a magnetic filter,
Generating a deflection magnetic field inside the duct by the magnetic filter,
Based on the deflecting magnetic field, while removing coarse particles generated by the evaporation, transport the plasma flow containing the ions of the cathode material from one end of the duct to the other end of the duct,
The ions of the plasma flow are drawn out from the emission port into a film formation chamber and fly to a substrate in the film formation chamber,
In the vacuum arc deposition method of depositing the cathode material on the substrate,
One or more designated magnets closer to the evaporation source than the end magnet closest to the discharge port of the magnets are installed at an angle to the cross section of the duct,
A vacuum arc vapor deposition method, wherein a flying direction of the ions is controlled by a magnetic field generated by the designated magnet. 2. The vacuum arc vapor deposition according to claim 1, wherein the terminal magnet is installed at an angle with respect to the discharge surface of the discharge port, and the flight direction of ions of the cathode material is controlled by the magnetic field generated by the designated magnet and the terminal magnet. Method. 3. The vacuum arc vapor deposition method according to claim 1, wherein an installation angle of the designated magnet or an installation angle of the designated magnet and the terminal magnet is made variable. 4. The vacuum arc vapor deposition method according to claim 1, wherein each magnet comprises an electromagnetic coil. 5. The vacuum arc vapor deposition method according to claim 1, wherein the installation angle of the designated magnet or the installation angles of the designated magnet and the terminal magnet are automatically controlled. 2. The magnet according to claim 1, wherein each magnet comprises an electromagnetic coil, and the coil current of the electromagnetic coil of each magnet is controlled in conjunction with control of the installation angle of the designated magnet or control of the installation angle of the designated magnet and the terminal magnet. , 2, 3, 4 or 5. 7. The vacuum arc vapor deposition method according to claim 1, wherein a plurality of evaporation sources are provided. 8. The vacuum arc vapor deposition method according to claim 1, wherein the direction of the coil current of the electromagnetic coil forming each magnet is switched at predetermined time intervals and reversed. A film forming chamber provided with a base material,
A curved or bent duct;
An evaporation source located at one end of the duct, wherein the cathode material evaporates due to arc discharge in a vacuum;
An outlet at the other end of the duct communicating with the film forming chamber,
A plasma flow including ions of the cathode material is formed by providing a magnet surrounding the duct at each of a plurality of locations of the duct, generating a deflecting magnetic field in the duct, and removing coarse particles generated by the evaporation. A magnetic filter that transports from one end of the duct to the discharge port,
In the vacuum arc vapor deposition apparatus that draws out the ions of the plasma flow from the emission port to the film formation chamber and flies to the substrate, and deposits the cathode material on the substrate.
A vacuum arc vapor deposition apparatus, wherein one or more designated magnets closer to the evaporation source than the terminal magnet closest to the discharge port among the magnets are installed at an angle to the cross section of the duct. . 10. The vacuum arc vapor deposition apparatus according to claim 9, wherein the terminal magnet is installed at an angle with respect to the emission surface of the emission port. 11. The vacuum arc vapor deposition apparatus according to claim 9, further comprising means for changing an installation angle of the designated magnet or an installation angle of the designated magnet and the terminal magnet. The vacuum arc evaporation apparatus according to claim 9, 10 or 11, wherein each magnet comprises an electromagnetic coil. 13. The vacuum arc vapor deposition apparatus according to claim 9, further comprising automatic control means for setting an installation angle of a designated magnet or an installation angle of a designated magnet and a terminal magnet. Each magnet is formed of an electromagnetic coil, and a means for controlling a coil current of the electromagnetic coil of each magnet in conjunction with control of the installation angle of the designated magnet or control of the installation angle of the designated magnet and the terminal magnet is provided. 14. The vacuum arc vapor deposition apparatus according to claim 9, 10, 11, 12, or 13. 15. The vacuum arc vapor deposition apparatus according to claim 9, wherein a plurality of evaporation sources are provided. 16. The vacuum arc vapor deposition according to claim 10, further comprising an energization control means for switching a direction of a coil current of an electromagnetic coil forming each magnet at predetermined time intervals to reverse the direction. apparatus.

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