JP2003512526A5 - - Google Patents

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Publication number
JP2003512526A5
JP2003512526A5 JP2001532257A JP2001532257A JP2003512526A5 JP 2003512526 A5 JP2003512526 A5 JP 2003512526A5 JP 2001532257 A JP2001532257 A JP 2001532257A JP 2001532257 A JP2001532257 A JP 2001532257A JP 2003512526 A5 JP2003512526 A5 JP 2003512526A5
Authority
JP
Japan
Prior art keywords
winding
tap
transformer
substrate
improved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001532257A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003512526A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2000/028482 external-priority patent/WO2001029278A1/fr
Publication of JP2003512526A publication Critical patent/JP2003512526A/ja
Publication of JP2003512526A5 publication Critical patent/JP2003512526A5/ja
Pending legal-status Critical Current

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JP2001532257A 1999-10-15 2000-10-13 複数の電極のスパッタリングシステムにおいて基板にバイアスをかける方法および装置 Pending JP2003512526A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15989699P 1999-10-15 1999-10-15
US60/159,896 1999-10-15
PCT/US2000/028482 WO2001029278A1 (fr) 1999-10-15 2000-10-13 Technique et dispositif de polarisation du substrat dans des systemes de pulverisation a electrodes in multiples

Publications (2)

Publication Number Publication Date
JP2003512526A JP2003512526A (ja) 2003-04-02
JP2003512526A5 true JP2003512526A5 (fr) 2007-11-22

Family

ID=22574565

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001532257A Pending JP2003512526A (ja) 1999-10-15 2000-10-13 複数の電極のスパッタリングシステムにおいて基板にバイアスをかける方法および装置

Country Status (4)

Country Link
EP (1) EP1235947A4 (fr)
JP (1) JP2003512526A (fr)
KR (1) KR20020040875A (fr)
WO (1) WO2001029278A1 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6818103B1 (en) 1999-10-15 2004-11-16 Advanced Energy Industries, Inc. Method and apparatus for substrate biasing in multiple electrode sputtering systems
US7179350B2 (en) 2003-05-23 2007-02-20 Tegal Corporation Reactive sputtering of silicon nitride films by RF supported DC magnetron
US8691057B2 (en) 2008-03-25 2014-04-08 Oem Group Stress adjustment in reactive sputtering
DE102008060838A1 (de) 2008-12-05 2010-06-10 Zounek, Alexis, Dr. Beschichtungsverfahren, Vorrichtung zur Durchführung des Verfahrens
US8482375B2 (en) 2009-05-24 2013-07-09 Oem Group, Inc. Sputter deposition of cermet resistor films with low temperature coefficient of resistance
RU2540318C2 (ru) * 2013-03-18 2015-02-10 Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" (ФГУП "НПП "Исток") Устройство для ионно-плазменного травления и нанесения тонких пленок
RU2562568C2 (ru) * 2013-06-18 2015-09-10 Виталий Степанович Гончаров Установка для вакуумного ионно-плазменного нанесения покрытий
JP6458206B1 (ja) 2017-06-27 2019-01-23 キヤノンアネルバ株式会社 プラズマ処理装置
KR20220031132A (ko) 2017-06-27 2022-03-11 캐논 아네르바 가부시키가이샤 플라스마 처리 장치
TWI690244B (zh) * 2017-06-27 2020-04-01 日商佳能安內華股份有限公司 電漿處理裝置
TWI693860B (zh) 2017-06-27 2020-05-11 日商佳能安內華股份有限公司 電漿處理裝置
WO2019003309A1 (fr) 2017-06-27 2019-01-03 キヤノンアネルバ株式会社 Dispositif de traitement par plasma
SG11202009122YA (en) 2018-06-26 2020-10-29 Canon Anelva Corp Plasma processing apparatus, plasma processing method, program, and memory medium
KR102512057B1 (ko) * 2020-12-29 2023-03-20 주식회사 더블유에스지 비접촉식 전해연마 공정을 포함하는 강관의 제조방법, 이로부터 제조되는 강관

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4693805A (en) * 1986-02-14 1987-09-15 Boe Limited Method and apparatus for sputtering a dielectric target or for reactive sputtering
DE4042287C2 (de) * 1990-12-31 1999-10-28 Leybold Ag Vorrichtung zum reaktiven Aufstäuben von elektrisch isolierendem Werkstoff
US5415757A (en) * 1991-11-26 1995-05-16 Leybold Aktiengesellschaft Apparatus for coating a substrate with electrically nonconductive coatings
US5512164A (en) * 1993-06-03 1996-04-30 The United States Of America As Represented By The United States Department Of Energy Method for sputtering with low frequency alternating current
US5882492A (en) * 1996-06-21 1999-03-16 Sierra Applied Sciences, Inc. A.C. plasma processing system
US5897753A (en) * 1997-05-28 1999-04-27 Advanced Energy Industries, Inc. Continuous deposition of insulating material using multiple anodes alternated between positive and negative voltages
DK0908535T3 (da) * 1997-10-08 2003-11-10 Cockerill Rech & Dev Fremgangsmåde til at dekapere et substrat og anlæg til at udføre fremgangsmåden

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