JP2003347610A - Method of heat treating oxide superconducting thin film - Google Patents
Method of heat treating oxide superconducting thin filmInfo
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- JP2003347610A JP2003347610A JP2002154216A JP2002154216A JP2003347610A JP 2003347610 A JP2003347610 A JP 2003347610A JP 2002154216 A JP2002154216 A JP 2002154216A JP 2002154216 A JP2002154216 A JP 2002154216A JP 2003347610 A JP2003347610 A JP 2003347610A
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- Prior art keywords
- thin film
- oxide superconducting
- superconducting thin
- substrate
- ybco
- Prior art date
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- Crystals, And After-Treatments Of Crystals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、電子部品搭載用基
板や高周波素子用の基板、および高速回路等に使用する
酸化物超電導薄膜積層基板に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate for mounting an electronic component, a substrate for a high-frequency device, and an oxide superconducting thin film laminated substrate used for a high-speed circuit or the like.
【０００２】[0002]
【従来の技術】ＹＢＣＯ（Ｙ−Ｂａ−Ｃｕ−Ｏ）薄膜を
形成するための絶縁基板材料として、これまでに用いら
れてきたものには、Ｓｉ、ＳｉＯ２、Ａｌ２Ｏ３、Ｍｇ
Ｏ、ＳｒＴｉＯ３、ＹＳＺ、（Ｌａ，Ｓｒ）２ＡｌＴａ
Ｏ６、ＬａＡｌＯ３等があるが、これらのうち、高周波
素子用の基板として使用する場合には、誘電率が低いこ
とが重要となってくる。2. Description of the Related Art As an insulating substrate material for forming a YBCO (Y-Ba-Cu-O) thin film, Si, SiO 2 , Al 2 O 3 , Mg
O, SrTiO 3 , YSZ, (La, Sr) 2 AlTa
There are O 6 , LaAlO 3, and the like. Of these, when used as a substrate for a high-frequency element, it is important that the dielectric constant is low.
【０００３】よって、これらの材料の中で最も誘電率の
低いＳｉＯ２（εｒ〜４）上へ酸化物超電導薄膜を形成
することが重要であるが、ＳｉＯ２がアモルファスな材
料であること、またＳｉがＹＢＣＯと激しく反応し、超
電導特性を損失させてしてしまうことから、バッファー
層なしでは適用することができないという問題がある。Therefore, it is important to form an oxide superconducting thin film on SiO 2 (εr〜4) having the lowest dielectric constant among these materials. However, it is important that SiO 2 is an amorphous material. Since Si reacts violently with YBCO and causes loss of superconductivity, there is a problem that it cannot be applied without a buffer layer.
【０００４】また、サファイヤ基板Ａｌ２Ｏ３も同様で
ある。[0004] The same applies to the sapphire substrate Al 2 O 3 .
【０００５】そこで、ＭｇＯまたは、ＬａＡｌＯ３がＹ
ＢＣＯ薄膜の実用化基板材料として考えられてきた。と
ころが、ＬａＡｌＯ３は製造ロットごとに誘電率がバラ
ツキ、ＭｇＯの誘電率が９．７程度の誘電率と比べＬａ
ＡｌＯ３は２６程度と大きい。そこで、ＭｇＯ基板が重
要な実用基板となっている。Therefore, MgO or LaAlO 3 is converted to Y
It has been considered as a practical substrate material for BCO thin films. However, the dielectric constant of LaAlO 3 varies from production lot to production lot, and the dielectric constant of MgO is about La.
AlO 3 is as large as about 26. Therefore, the MgO substrate is an important practical substrate.
【０００６】従来、ＭｇＯ基板を用いた利用例として
は、ＭｇＯ基板上にＹＢＣＯ薄膜をｃ軸配向させたもの
が殆どである。Conventionally, as an application example using an MgO substrate, most of the cases where a YBCO thin film is c-axis oriented on an MgO substrate.
【０００７】その場合、ＭｇＯ基板とＹＢＣＯ薄膜のａ
−ｂ面内の格子整合がよくなく、通常のＭｇＯ基板上に
成長させたＹＢＣＯ薄膜の凹凸は大きい。In such a case, the MgO substrate and the YBCO thin film a
The lattice matching in the -b plane is poor, and the YBCO thin film grown on a normal MgO substrate has large irregularities.
【０００８】例えば、図２に示すように、レーザー・ア
ブレーション（ＰＬＤ）法によって、ＭｇＯ基板１上に
厚さ３００ｎｍを成長させたＹＢＣＯ薄膜２の凹凸１１
は、１０ｎｍから１５ｎｍにて、上部がやや平坦になっ
ている四角錐が大小敷き詰められている形状である。For example, as shown in FIG. 2, unevenness 11 of a YBCO thin film 2 having a thickness of 300 nm grown on an MgO substrate 1 by a laser ablation (PLD) method.
Is a shape in which quadrangular pyramids whose upper portions are slightly flat are spread over a large and small area from 10 nm to 15 nm.
【０００９】この様な大きな凹凸があっても、マイクロ
波デバイスの受動デバイス、例えば、１ＧＨｚから５Ｇ
Ｈｚの領域の特定周波数で用いられるバンド・パスフィ
ルターとしては、通常金属の金（Ａｕ）などと比べ十分
小さな表面抵抗を持っているので利用に供されている。Despite such large irregularities, passive devices of microwave devices, for example, from 1 GHz to 5 G
A band-pass filter used at a specific frequency in the range of Hz usually has a sufficiently small surface resistance as compared with metal such as gold (Au), so that it is used.
【００１０】ランプエッジ構造のジョセフソン接合素子
を用いる応用分野では、１０ｎｍから１５ｎｍのＹＢＣ
Ｏ薄膜の凹凸では使用できない。In an application field using a Josephson junction device having a ramp edge structure, a YBC of 10 to 15 nm is used.
It cannot be used with the unevenness of the O thin film.
【００１１】そこで、そのような用途では、従来、液相
成長（ＬＰＥ）法にて、１０μｍ以上の厚さでＭｇＯ基
板上にＹＢＣＯ薄膜を成長させ、表面を研磨して凹凸を
３ｎｍ程度に平坦化し、そのまま使用したり、その上部
にＹＢＣＯ薄膜をホモエピ成長させ平坦なＹＢＣＯ薄膜
表面を得ている。Therefore, in such applications, conventionally, a YBCO thin film is grown on an MgO substrate to a thickness of 10 μm or more by a liquid phase epitaxy (LPE) method, and the surface is polished to make the irregularities flat to about 3 nm. It is used as it is, or a YBCO thin film is homoepitaxially grown thereon to obtain a flat YBCO thin film surface.
【００１２】[0012]
【発明が解決しようとする課題】しかしながら、ＬＰＥ
法にて、ＭｇＯ基板上に１０μｍ以上の厚さでＹＢＣＯ
薄膜を成長させ、表面を研磨して凹凸を３ｎｍ程度に平
坦化するという工程は、その工程が長いばかりでなく高
価であるという問題がある。However, the LPE
YBCO with a thickness of 10 μm or more on an MgO substrate
The process of growing a thin film and polishing the surface to flatten the irregularities to about 3 nm has a problem that the process is not only long but also expensive.
【００１３】そこで、本発明の技術的課題は、局所的で
はあるが平坦度を凹凸で３ｎｍ程度にすることができ、
さらに工程が簡単であるため、安価に結果を得る酸化物
超電導薄膜とその製造方法と、その熱処理方法とを提供
することにある。Therefore, a technical problem of the present invention is that the flatness can be reduced to about 3 nm by unevenness, though it is local.
Another object of the present invention is to provide an oxide superconducting thin film, a method of manufacturing the same, and a heat treatment method thereof, which can provide a low-cost result because the process is simple.
【００１４】[0014]
【課題を解決するための手段】本発明によれば、基板上
に、前記基板の熱膨張係数より小さい熱膨張係数を有す
るＹＢＣＯ膜を成長し、酸素を含む雰囲気中で急速加熱
し、前記酸化物超電導薄膜の表面形状を改善することを
特徴とする酸化物超電導薄膜の熱処理方法が得られる。According to the present invention, a YBCO film having a coefficient of thermal expansion smaller than the coefficient of thermal expansion of a substrate is grown on the substrate and rapidly heated in an atmosphere containing oxygen to form the oxidized film. And a heat treatment method for the oxide superconducting thin film, characterized in that the surface shape of the superconducting thin film is improved.
【００１５】また、本発明によれば、前記基板の材料と
して、ＭｇＯを用い、前記酸化物超電導薄膜としてＹＢ
ＣＯ薄膜を用いることを特徴とする前記酸化物超電導薄
膜の熱処理方法が得られる。According to the present invention, MgO is used as the material of the substrate, and YB is used as the oxide superconducting thin film.
The heat treatment method for the oxide superconducting thin film, characterized by using a CO thin film, is obtained.
【００１６】また、本発明によれば、前記急速過熱で
は、１分間を越えない時間で室温から３５０℃乃至５０
０℃の１００％酸素雰囲気に晒すことを特徴とする前記
いずれか一つに記載の酸化物超電導薄膜の熱処理方法が
得られる。Further, according to the present invention, in the rapid heating, the temperature is changed from room temperature to 350 ° C. to 50 ° C. in a time not exceeding 1 minute.
The heat treatment method for an oxide superconducting thin film according to any one of the above, wherein the method is exposed to a 100% oxygen atmosphere at 0 ° C.
【００１７】また、本発明によれば、基板上に成長した
前記基板の熱膨張係数より小さい熱膨張係数を有するＹ
ＢＣＯ膜であって、酸素を含む雰囲気中で急速加熱し、
酸化物超電導薄膜の表面形状が改善されていることを特
徴とする酸化物超電導薄膜が得られる。Further, according to the present invention, Y having a smaller coefficient of thermal expansion than that of the substrate grown on the substrate.
A BCO film, which is rapidly heated in an atmosphere containing oxygen,
An oxide superconducting thin film characterized in that the surface shape of the oxide superconducting thin film is improved.
【００１８】また、本発明によれば、前記基板の材料は
ＭｇＯからなり、前記酸化物超電導薄膜は、ＹＢＣＯ薄
膜であることを特徴とする前記酸化物超電導薄膜が得ら
れる。According to the present invention, there is provided the oxide superconducting thin film, wherein the material of the substrate is made of MgO, and the oxide superconducting thin film is a YBCO thin film.
【００１９】また、本発明によれば、前記急速加熱は、
１分間を越えない時間で室温から３５０℃乃至５００℃
の１００％酸素雰囲気に晒すことであることを特徴とす
る前記いずれか一つに記載の酸化物超電導薄膜が得られ
る。According to the present invention, the rapid heating comprises:
350 ° C to 500 ° C from room temperature in less than 1 minute
The oxide superconducting thin film according to any one of the above, wherein the oxide superconducting thin film is exposed to a 100% oxygen atmosphere.
【００２０】また、本発明によれば、基板上に、前記基
板の熱膨張係数より小さい熱膨張係数を有するＹＢＣＯ
膜を成長し、酸素を含む雰囲気中で急速加熱し、前記酸
化物超電導薄膜の表面形状を改善することを特徴とする
酸化物超電導薄膜の製造方法が得られる。According to the present invention, a YBCO having a coefficient of thermal expansion smaller than the coefficient of thermal expansion of the substrate is provided on the substrate.
A method for producing an oxide superconducting thin film is characterized in that the film is grown and rapidly heated in an atmosphere containing oxygen to improve the surface shape of the oxide superconducting thin film.
【００２１】また、本発明によれば、前記基板の材料と
して、ＭｇＯを用い、前記酸化物超電導薄膜としてＹＢ
ＣＯ薄膜を用いることを特徴とする前記酸化物超電導薄
膜の製造方法が得られる。According to the present invention, MgO is used as the material of the substrate, and YB is used as the oxide superconducting thin film.
A method for producing the oxide superconducting thin film, characterized by using a CO thin film, is obtained.
【００２２】また、本発明によれば、前記急速過熱は、
１分間を越えない時間で室温から３５０℃乃至５００℃
の１００％酸素雰囲気に晒すことを含むことを特徴とす
る前記いずれか一つの酸化物超電導薄膜の製造方法が得
られる。Further, according to the present invention, the rapid superheating comprises:
350 ° C to 500 ° C from room temperature in less than 1 minute
A method for producing an oxide superconducting thin film according to any one of the above, comprising exposing the film to a 100% oxygen atmosphere.
【００２３】[0023]
【発明の実施の形態】以下、本発明の実施の形態につい
て説明する。Embodiments of the present invention will be described below.
【００２４】図１（ａ）及び（ｂ）は夫々本発明の実施
の形態による酸化物超電導薄膜を示す平面図及び断面図
である。図１（ａ）及び（ｂ）において、ＭｇＯの基板
１の上にＹＢＣＯからなる酸化物超電導薄膜２の表面に
は、５０ｎｍ程度の高さをもつ大きな突起３があるが、
その太さ（幅）は、大きくても約０．２μｍであり、ほ
とんどは０．１μｍ程度である。また、その密度は２μ
ｍ平方で、２０個程度である。FIGS. 1A and 1B are a plan view and a sectional view showing an oxide superconducting thin film according to an embodiment of the present invention, respectively. In FIGS. 1A and 1B, a large protrusion 3 having a height of about 50 nm is formed on the surface of an oxide superconducting thin film 2 made of YBCO on a substrate 1 of MgO.
Its thickness (width) is at most about 0.2 μm, and most is about 0.1 μm. The density is 2μ
There are about 20 square meters.
【００２５】図２は、酸化物超電導薄膜準備材を示す図
であり、（ａ）は平面図、（ｂ）は断面図である。図２
を参照すると、酸化物超電導薄膜準備材２０は、ＭｇＯ
基板１上にＹＢＣＯ薄膜２が形成されている。この酸化
物超電導薄膜準備材２０は、通常のＰＬＤ法によって作
製されている。また、ＹＢＣＯ薄膜２の表面の凹凸１１
は１０ｎｍから１５ｎｍである。FIGS. 2A and 2B are diagrams showing a material for preparing an oxide superconducting thin film, wherein FIG. 2A is a plan view and FIG. 2B is a sectional view. FIG.
Referring to FIG. 2, the oxide superconducting thin film preparation material 20 is made of MgO.
A YBCO thin film 2 is formed on a substrate 1. This oxide superconducting thin film preparation material 20 is manufactured by a normal PLD method. In addition, irregularities 11 on the surface of the YBCO thin film 2
Is 10 nm to 15 nm.
【００２６】本発明に係る酸化物超電導薄膜は、次のよ
うに処理される。The oxide superconducting thin film according to the present invention is processed as follows.
【００２７】まず、温度を３５０℃乃至５００℃に保
ち、酸素を充満した炉を準備する。その炉の中に、室温
の酸化物超電導薄膜準備材２０を数秒、長くても１分以
内に挿入し急加熱する。First, the furnace is maintained at a temperature of 350 ° C. to 500 ° C. and filled with oxygen. The room temperature oxide superconducting thin film preparation material 20 is inserted into the furnace for several seconds, at most within one minute, and rapidly heated.
【００２８】上記急加熱した酸化物超電導薄膜は上記設
定温度に保持する時間、ならびに室温に戻す時間に関し
ては、酸素雰囲気を保持しているかぎり、それほどセン
シティブではない。The time for maintaining the set temperature and the time for returning to room temperature of the rapidly heated oxide superconducting thin film are not so sensitive as long as the oxygen atmosphere is maintained.
【００２９】例えば、１数分の保持時間から数時間の保
持時間、数分で室温に戻すから数時間で戻してよい。急
加熱が本質的なものである。For example, a holding time of a few minutes to a holding time of several hours, and a return to room temperature in a few minutes may be taken in a few hours. Rapid heating is essential.
【００３０】この熱処理によって、図１に示す酸化物超
電導薄膜１０が得られる。By this heat treatment, the oxide superconducting thin film 10 shown in FIG. 1 is obtained.
【００３１】次に、本発明の具体例を図面に基づき説明
する。Next, a specific example of the present invention will be described with reference to the drawings.
【００３２】（例１）図２に示すように、酸化物超電導
薄膜準備材２０は、ＭｇＯ基板１上に作製されたＹＢＣ
Ｏ薄膜２であり、通常のＰＬＤ法によって厚さ３００ｎ
ｍ近傍に作製したものである。(Example 1) As shown in FIG. 2, an oxide superconducting thin film preparing material 20 is made of a YBC formed on an MgO substrate 1.
O thin film 2 having a thickness of 300 n by an ordinary PLD method
m.
【００３３】ＹＢＣＯ薄膜２の表面の凹凸１１は図２に
示すような１０ｎｍから１５ｎｍである。さらに、室温
の上記酸化物超電導薄膜準備材２０をピンセットで保持
したセラミックボートに乗せ、そのまま温度を５００℃
に保ち、酸素を充満した炉の中に挿入し、上記酸化物超
電導薄膜準備材２０を急加熱する。The unevenness 11 on the surface of the YBCO thin film 2 is 10 nm to 15 nm as shown in FIG. Further, the material 20 for preparing the oxide superconducting thin film at room temperature was put on a ceramic boat held by tweezers, and the temperature was kept at 500 ° C.
, And inserted into a furnace filled with oxygen to rapidly heat the oxide superconducting thin film preparation material 20.
【００３４】酸素中で三時間、その温度に保持して、そ
の後、酸素を流したまま、炉の加熱電源を切り、自然冷
却する。５０℃以下の室温近傍になるまで４時間経過し
た。The temperature is maintained in oxygen for 3 hours, and then, while the oxygen is flowing, the heating power of the furnace is turned off and the furnace is naturally cooled. It took 4 hours to reach a room temperature of 50 ° C. or lower.
【００３５】上記炉から取り出した酸化物超電導薄膜の
表面の凹凸を図１に示す。FIG. 1 shows the surface irregularities of the oxide superconducting thin film taken out of the furnace.
【００３６】図１に示すように、５０ｎｍ程度の高さを
もつ大きな突起３があるが、その太さは約大きくても
０．２μｍであり、ほとんどは０．１μｍ程度である。
その密度は２μｍ平方で、２０個程度である。As shown in FIG. 1, there is a large projection 3 having a height of about 50 nm, but its thickness is about 0.2 μm at most, and is about 0.1 μm in most cases.
Its density is 2 μm square and about 20 pieces.
【００３７】その大きな突起物３を除いたＹＢＣＯ薄膜
２の平坦部５の凹凸は大きくても６ｎｍよりも小さく、
かつ平滑である。The unevenness of the flat portion 5 of the YBCO thin film 2 excluding the large protrusion 3 is at most smaller than 6 nm.
And smooth.
【００３８】平滑部は２ｎｍよりも小さく、ＬＰＥ法の
膜を研磨した時と同等な平滑度を示した。The smooth portion was smaller than 2 nm, and showed the same smoothness as when the film was polished by the LPE method.
【００３９】（例２）炉の温度を３５０℃にした以外
は、上記例１と同じ条件にして熱処理した場合は、上記
大きな突起３の高さが２５ｎｍ程度と、５００℃の場合
と比べ半減していた。(Example 2) When the heat treatment was carried out under the same conditions as in Example 1 except that the temperature of the furnace was 350 ° C., the height of the large projections 3 was about 25 nm, which is half that of the case of 500 ° C. Was.
【００４０】このように、本発明の実施の形態による酸
化物超電導薄膜の熱処理方法によれば、極めて簡単な方
法により、研磨した平滑度と同等の値を局所的に得るこ
とができた。この平滑部分は一辺が０．３μｍ程度の正
方形で得られるので、この部分に微細なデバイスを設け
ることができる。As described above, according to the heat treatment method for an oxide superconducting thin film according to the embodiment of the present invention, a value equivalent to polished smoothness could be locally obtained by an extremely simple method. Since this smooth portion is obtained as a square having a side of about 0.3 μm, a fine device can be provided in this portion.
【００４１】また、電子ビームやイオンビームを用いた
ナノテク・加工技術をもってすれば、一辺が０．３μｍ
の正方形は決して小さな領域ではない。In addition, if nanotechnology and processing technology using an electron beam or an ion beam are used, one side is 0.3 μm.
Is not a small area.
【００４２】更に，本発明の実施の形態による酸化物超
電導薄膜の熱処理方法によれば、研磨による残留ストレ
スも基板中には存在しないという利点も備えている。Further, the heat treatment method for an oxide superconducting thin film according to the embodiment of the present invention has an advantage that residual stress due to polishing does not exist in the substrate.
【００４３】[0043]
【発明の効果】以上のように、本発明によれば、極めて
簡単な方法により、研磨した平滑度と同等の値を局所的
に得ることができる酸化物超電導薄膜とその熱処理方法
とその製造方法とを提供することができる。As described above, according to the present invention, an oxide superconducting thin film capable of locally obtaining a value equivalent to polished smoothness by an extremely simple method, a heat treatment method thereof, and a production method thereof And can be provided.
【００４４】また、本発明によれば、研磨による残留ス
トレスも基板中には存在しない酸化物超電導薄膜とその
熱処理方法とその製造方法とを提供することができる。Further, according to the present invention, it is possible to provide an oxide superconducting thin film in which residual stress due to polishing does not exist in the substrate, a heat treatment method thereof, and a manufacturing method thereof.
【図１】本発明の実施の形態による酸化物超電導薄膜を
示す部分図で、（ａ）は平面図，（ｂ）は断面図であ
る。FIG. 1 is a partial view showing an oxide superconducting thin film according to an embodiment of the present invention, in which (a) is a plan view and (b) is a cross-sectional view.
【図２】酸化物超電導薄膜準備材の形状を示す図で、従
来技術による酸化物超電導薄膜を示し、（ａ）は平面
図、（ｂ）は断面図である。FIG. 2 is a view showing a shape of an oxide superconducting thin film preparation material, showing an oxide superconducting thin film according to a conventional technique, wherein (a) is a plan view and (b) is a sectional view.
１ 基板（ＭｇＯ） ２ 酸化物超電導薄膜（ＹＢＣＯ） ３ 突起（凹凸） ５ 平坦部 １０ 酸化物超電導薄膜 ２０ 酸化物超電導薄膜準備材 1 Substrate (MgO) 2 Oxide superconducting thin film (YBCO) 3 protrusions (irregularities) 5 flat part 10 Oxide superconducting thin film 20 Preparation material for oxide superconducting thin film
フロントページの続き (72)発明者 鈴木 克己 東京都江東区東雲一丁目14番３号 財団法 人 国際超電導産業技術研究センター 超 電導工学研究所内 (72)発明者 榎本 陽一 東京都江東区東雲一丁目14番３号 財団法 人 国際超電導産業技術研究センター 超 電導工学研究所内 Ｆターム(参考） 4G077 AA03 BC53 DA03 ED06 FE03 FE11 HA08 SA04 4M113 AD36 AD37 BA01 BA11 BA21 BA29 BA30 CA39 5G321 AA04 CA24 DB46 DB47 Continuation of front page (72) Inventor Katsumi Suzuki 1-14-3 Shinonome, Koto-ku, Tokyo Foundation Law People International Superconducting Industrial Technology Research Center Inside the conductive engineering laboratory (72) Inventor Yoichi Enomoto 1-14-3 Shinonome, Koto-ku, Tokyo Foundation Law People International Superconducting Industrial Technology Research Center Inside the conductive engineering laboratory F term (reference) 4G077 AA03 BC53 DA03 ED06 FE03 FE11 HA08 SA04 4M113 AD36 AD37 BA01 BA11 BA21 BA29 BA30 CA39 5G321 AA04 CA24 DB46 DB47
Claims (9)
さい熱膨張係数を有するＹＢＣＯ膜を成長し、酸素を含
む雰囲気中で急速加熱し、前記酸化物超電導薄膜の表面
形状を改善することを特徴とする酸化物超電導薄膜の熱
処理方法。1. A method of growing a YBCO film having a thermal expansion coefficient smaller than a thermal expansion coefficient of a substrate on a substrate and rapidly heating the YBCO film in an atmosphere containing oxygen to improve the surface shape of the oxide superconducting thin film. A heat treatment method for an oxide superconducting thin film, comprising:
前記酸化物超電導薄膜としてＹＢＣＯ薄膜を用いること
を特徴とする請求項１に記載の酸化物超電導薄膜の熱処
理方法。2. The method according to claim 1, wherein the substrate is made of MgO.
The heat treatment method for an oxide superconducting thin film according to claim 1, wherein a YBCO thin film is used as the oxide superconducting thin film.
間で室温から３５０℃乃至５００℃の１００％酸素雰囲
気に晒すことを特徴とする請求項１又は２に記載の酸化
物超電導薄膜の熱処理方法。3. The heat treatment of an oxide superconducting thin film according to claim 1, wherein in the rapid superheating, the oxide superconducting thin film is exposed to a 100% oxygen atmosphere from room temperature to 350 ° C. to 500 ° C. for a time not exceeding 1 minute. Method.
より小さい熱膨張係数を有するＹＢＣＯ膜であって、酸
素を含む雰囲気中で急速加熱し、酸化物超電導薄膜の表
面形状が改善されていることを特徴とする酸化物超電導
薄膜。4. A YBCO film having a coefficient of thermal expansion smaller than the coefficient of thermal expansion of the substrate grown on the substrate, wherein the YBCO film is rapidly heated in an atmosphere containing oxygen to improve the surface shape of the oxide superconducting thin film. An oxide superconducting thin film characterized in that:
酸化物超電導薄膜は、ＹＢＣＯ薄膜であることを特徴と
する請求項４に記載の酸化物超電導薄膜。5. The oxide superconducting thin film according to claim 4, wherein the material of the substrate is made of MgO, and the oxide superconducting thin film is a YBCO thin film.
で室温から３５０℃乃至５００℃の１００％酸素雰囲気
に晒すことであることを特徴とする請求項４又は５に記
載の酸化物超電導薄膜。6. The superconducting oxide according to claim 4, wherein the rapid heating is performed by exposing to an atmosphere of 100% oxygen at a temperature from room temperature to 350 ° C. to 500 ° C. for a time not exceeding 1 minute. Thin film.
さい熱膨張係数を有するＹＢＣＯ膜を成長し、酸素を含
む雰囲気中で急速加熱し、前記酸化物超電導薄膜の表面
形状を改善することを特徴とする酸化物超電導薄膜の製
造方法。7. A method of growing a YBCO film having a thermal expansion coefficient smaller than that of the substrate on a substrate and rapidly heating the film in an atmosphere containing oxygen to improve the surface shape of the oxide superconducting thin film. A method for producing an oxide superconducting thin film, comprising:
前記酸化物超電導薄膜としてＹＢＣＯ薄膜を用いること
を特徴とする請求項７に記載の酸化物超電導薄膜の製造
方法。8. The method according to claim 8, wherein the substrate is made of MgO.
The method for producing an oxide superconducting thin film according to claim 7, wherein a YBCO thin film is used as the oxide superconducting thin film.
で室温から３５０℃乃至５００℃の１００％酸素雰囲気
に晒すことを含むことを特徴とする請求項７又は８に記
載の酸化物超電導薄膜の製造方法。9. The superconducting oxide according to claim 7, wherein the rapid superheating includes exposing to a 100% oxygen atmosphere from room temperature to 350 ° C. to 500 ° C. for a time not exceeding 1 minute. Manufacturing method of thin film.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006082747A1 (en) * | 2005-02-03 | 2006-08-10 | Sumitomo Electric Industries, Ltd. | Superconducting thin film material, superconducting wire rod and methods for manufacturing such superconducting thin film material and superconducting wire rod |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006082747A1 (en) * | 2005-02-03 | 2006-08-10 | Sumitomo Electric Industries, Ltd. | Superconducting thin film material, superconducting wire rod and methods for manufacturing such superconducting thin film material and superconducting wire rod |
| JP2006216365A (en) * | 2005-02-03 | 2006-08-17 | Sumitomo Electric Ind Ltd | Superconductive thin film material, superconductive wire and manufacturing method thereof |
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