JP2003347473A - Semiconductor device and method for manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide the structure of a compact and thin semiconductor device where the influence of a thermal stress is small, and connection reliability is high and a method for manufacturing the semiconductor device. <P>SOLUTION: This semiconductor device comprises a semiconductor chip having a projecting connection terminal, an external terminal directly connected to the connection terminal of the semiconductor chip and resin sealing a semiconductor chip. In this case, the external terminal is adhesively formed along an outline face formed of the sealing resin. <P>COPYRIGHT: (C)2004,JPO

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor device and a method for manufacturing the same.

[0002]

2. Description of the Related Art In recent years, flip-chip connection technology for directly connecting a semiconductor chip having protruding connection terminals to a substrate electrode has been attracting attention from the viewpoint of supporting high-speed transmission and improving heat dissipation. A semiconductor device to which the flip-chip connection technology is applied generally includes a semiconductor chip having protruding connection terminals, a substrate on which wiring is formed, and a resin for sealing the semiconductor chip. It is manufactured by a process of aligning the electrodes, electrically connecting the wiring on the substrate side and the connection terminals of the semiconductor chip, and then sealing the semiconductor chip with resin. The connection between the semiconductor chip and the board is made by using solder, conductive paste, anisotropic conductive adhesive, or as a special method, by using a resin with large curing shrinkage, and connecting the connection terminals of the semiconductor chip and the wiring on the board. There is known a method of curing and shrinking in a state of contact, and maintaining the contact.

[0003] Further, in order to cope with miniaturization, multifunctionality, and high functionality of electronic equipment, the present invention relates to a technology (system-in-package) for constructing a system by three-dimensionally combining a plurality of semiconductor chips and packages. Development is active. In particular, when building a system by stacking packages three-dimensionally, the size of the package itself can be reduced.
There is a strong demand for a thinner device.

[0004]

As a cause of lowering the connection reliability of the semiconductor device, there is a generation of thermal stress due to a difference in thermal expansion coefficient between the semiconductor chip and the resin layer of the substrate. Generally, the coefficient of thermal expansion of the chip is 2-3 ppm
/ ° C, the coefficient of thermal expansion of the resin is 20 to 30 ppm / ° C, and a thermal stress is repeatedly generated during a thermal cycle test, which may cause cracks or breakage at the connection part. In order to ensure connection reliability, a method of filling the gap between the chip and the substrate with a resin to relieve the thermal stress (referred to as underfill) has been used. Must be injected without involving it, using special materials (low viscosity, low elastic modulus, low thermal expansion, high adhesive strength), long injection time, post-curing, etc. Therefore, there is a problem that the manufacturing process becomes complicated.

In order to reduce the difference in thermal expansion coefficient, there is a method using an organic substrate having a reduced thermal expansion coefficient by increasing the content of an inorganic filler or a substrate formed of a resin having a lower thermal expansion. However, since it is necessary to use special compounding techniques and materials, there is a problem from the viewpoint of cost reduction.

Further, in the electrical connection by contact, when a resin is filled in a gap between a substrate and a chip, a force for separating a contact portion at a high temperature acts due to thermal expansion of the filled resin, and the connection is made. Failure may occur.

When a thin organic substrate is used to reduce the size and thickness of the semiconductor package, a problem may occur due to the warpage of the substrate.

[0008] The present invention can be reduced in size and thickness,
It is an object of the present invention to provide a structure of a semiconductor device which is less affected by thermal stress and has high connection reliability and a method of manufacturing the same.

[0009]

The present invention has the following features. (1) a semiconductor chip having a protruding connection terminal, an external terminal directly connected to the connection terminal of the semiconductor chip,
A semiconductor device comprising a resin for sealing a semiconductor chip, and external terminals of which are formed in close contact with an outer surface formed by the sealing resin. (2) The protruding connection terminals of the semiconductor chip are lead, tin,
Gold, silver, copper, nickel, bismuth, indium, zinc,
The semiconductor device according to (1), which is a bump containing at least one component from palladium. (3) The semiconductor device according to (1), wherein the protruding connection terminal of the semiconductor chip is a bump formed of an insulating resin containing a conductive filler. (4) A metal chip and a semiconductor chip having a protruding connection terminal are stacked so that the metal foil and the connection terminal of the semiconductor chip are in contact with each other, and the connection terminal of the semiconductor chip is electrically connected to the metal foil by pressing or heating / pressing. A method of manufacturing a semiconductor device in which semiconductor chips are electrically connected, a semiconductor chip is sealed with a resin, and unnecessary portions of the metal foil are removed by etching. (5) An adhesive resin layer is formed on a metal foil, and a semiconductor chip having a protruding connection terminal is overlaid such that the connection terminal of the metal foil and the semiconductor chip are in contact with each other via the adhesive resin layer. A method of manufacturing a semiconductor device in which a connection terminal of a semiconductor chip is electrically connected to a metal foil by applying pressure, the semiconductor chip is sealed with a resin, and unnecessary portions of the metal foil are removed by etching. (6) An adhesive resin layer is formed on the connection terminal forming surface of the semiconductor chip having the protruding connection terminal, and the metal foil and the connection terminal of the semiconductor chip are overlapped so as to be in contact with each other via the adhesive resin layer, and then pressurized or heated. A method of manufacturing a semiconductor device in which a connection terminal of a semiconductor chip is electrically connected to a metal foil by applying pressure, the semiconductor chip is sealed with a resin, and unnecessary portions of the metal foil are removed by etching. (7) In the method of manufacturing a semiconductor according to any one of (4) to (6), when the semiconductor chip having the protruding connection terminals is electrically connected to the metal foil, the semiconductor chip is pressed or heated and pressed together. A method for manufacturing a semiconductor device, wherein ultrasonic vibration is applied in a plane direction.

(8) Wiring is formed on a metal foil with metal having different etching conditions, and a semiconductor chip having protruding connection terminals is overlapped so that the wiring formed on the metal foil and the connection terminals of the semiconductor chip are in contact with each other. A method of manufacturing a semiconductor device in which wiring or a connection terminal of a semiconductor chip is electrically connected by applying pressure or heating / pressing, and after sealing the semiconductor chip with resin, unnecessary metal foil is removed by etching. (9) Wiring is formed on the metal foil with a metal having different etching conditions, an adhesive resin layer is formed on the wiring forming surface of the metal foil, and then formed on the metal foil and the connection terminal of the semiconductor chip having projecting connection terminals. The wiring is overlapped with the adhesive resin layer so as to be in contact with it, and the connection terminals of the semiconductor chip and the wiring are electrically connected by pressing or heating / pressing, and after the semiconductor chip is sealed with resin, unnecessary A method of manufacturing a semiconductor device for removing a metal foil by etching. (10) Wiring was formed on a metal foil with a metal having different etching conditions, an adhesive resin layer was formed on a connection terminal formation surface of a semiconductor chip having protruding connection terminals, and formed on the connection terminals of the semiconductor chip and the metal foil. The wiring is overlapped with the adhesive resin layer so as to be in contact with it, and the connection terminals of the semiconductor chip and the wiring are electrically connected by pressing or heating / pressing, and after the semiconductor chip is sealed with resin, unnecessary A method of manufacturing a semiconductor device for removing a metal foil by etching. (11) In the semiconductor manufacturing method according to any one of (8) to (10), a pressure is applied when electrically connecting a wiring formed of a metal having different etching conditions to a semiconductor chip having protruding connection terminals and a metal foil. Alternatively, a method of manufacturing a semiconductor device, wherein ultrasonic vibration is applied in the surface direction of a semiconductor chip together with heating and pressing.

(12) A laminated substrate in which a metal foil is adhered to a support film and a semiconductor chip having protruding connection terminals are stacked so that the connection terminals of the metal foil and the semiconductor chip are in contact with each other, and are pressed or heated / heated. A method of manufacturing a semiconductor device in which a connection terminal of a semiconductor chip is electrically connected to a metal foil by pressing, a semiconductor chip is sealed with a resin, a support film is removed, and an unnecessary portion of the metal foil is removed by etching. . (13) An adhesive resin layer is formed on the surface of the metal foil of the laminated base material in which the metal foil is bonded to the support film, and the semiconductor chip having the protruding connection terminals is connected to the metal foil and the connection terminal of the semiconductor chip by the adhesive resin. After overlapping so that the layers are in contact with each other, the connection terminals of the semiconductor chip and the metal foil are electrically connected by pressing or heating / pressing, the semiconductor chip is sealed with resin, and the support film is removed. A method of manufacturing a semiconductor device in which unnecessary portions of a metal foil are removed by etching. (14) An adhesive resin layer is formed on a connection terminal forming surface of a semiconductor chip having protruding connection terminals, and a metal foil is bonded to a support film. Overlap so that it contacts through the resin layer,
The connection terminals of the semiconductor chip are electrically connected to the metal foil by pressing or heating / pressing, the semiconductor chip is sealed with resin, the support film is removed, and unnecessary portions of the metal foil are removed by etching. Semiconductor device manufacturing method. (15) In the method of manufacturing a semiconductor according to any one of (12) to (14), a pressure is applied when electrically connecting a semiconductor chip having protruding connection terminals and a laminated substrate in which a metal foil is bonded to a support film. Alternatively, a method of manufacturing a semiconductor device, wherein ultrasonic vibration is applied in a surface direction of a semiconductor chip together with heating and pressing.

(16) A laminated substrate in which a metal foil having wiring formed of metals having different etching conditions is bonded to a support film, and a semiconductor chip having protruding connection terminals are connected with the connection terminals of the semiconductor chip and the laminated substrate. The wiring is overlapped so that the wiring is in contact, and the connection terminals of the semiconductor chip and the wiring are electrically connected by pressing or heating / pressing, the semiconductor chip is sealed with a resin, and the supporting film is removed. A method for manufacturing a semiconductor device in which unnecessary portions are removed by etching. (17) A semiconductor chip having an adhesive resin layer formed on a wiring forming surface of a laminated base material in which a metal foil having wiring formed of a metal having different etching conditions is bonded to a support film and having protruding connection terminals is used as a semiconductor chip. The connection terminal of the semiconductor chip is overlapped with the wiring of the laminated base material through an adhesive resin layer so that the connection terminal of the semiconductor chip is electrically connected to the wiring by pressing or heating / pressing, and the semiconductor chip is connected to the resin. After removing the support film, the unnecessary portion of the metal foil is removed by etching. (18) An adhesive resin layer is formed on a connection terminal forming surface of a semiconductor chip having protruding connection terminals, and a metal substrate having wiring formed of metal having different etching conditions is bonded to a support film by a semiconductor. The connection terminals of the chip and the wiring of the laminated base material are overlapped so as to be in contact with each other, and the connection terminals and the wiring of the semiconductor chip are electrically connected by pressurizing or heating / pressing, and the semiconductor chip is sealed with a resin, A method of manufacturing a semiconductor device in which unnecessary portions of a metal foil are removed by etching after removing a supporting film. (19) In the method for manufacturing a semiconductor according to (16) to (18), a laminated base material in which a metal foil in which wiring is formed with a metal having different etching conditions is bonded to a semiconductor chip and a support film is electrically connected. A method of manufacturing a semiconductor device, comprising: applying ultrasonic vibration in the surface direction of a semiconductor chip together with pressing or heating / pressing.

(20) A semiconductor chip having a laminated base material on which wiring is formed on a support film and connection terminals protruding,
The wiring of the laminated base material and the connection terminal of the semiconductor chip were overlapped so as to be in contact with each other, and the connection terminal of the semiconductor chip and the wiring were electrically connected by pressing or heating / pressing, and the semiconductor chip was sealed with resin. Then, a method for manufacturing a semiconductor device in which the supporting film is removed. (21) An adhesive resin layer is formed on the wiring forming surface of the laminated base material on which the wiring is formed on the support film, and the semiconductor chip having the protruding connection terminal is connected to the wiring of the laminated base material and the connection terminal of the semiconductor chip. The connection film and the wiring are electrically connected to each other by pressing or heating / pressing with an adhesive resin layer interposed therebetween, and after the semiconductor chip is sealed with resin, the support film is removed. Semiconductor device manufacturing method. (22) A laminated base material in which an adhesive resin layer is formed on a connection terminal forming surface of a semiconductor chip having projecting connection terminals, and wiring is formed on a support film, is formed by using the wiring of the laminated base material and the connection terminals of the semiconductor chip. Are stacked so that they are in contact with each other via the adhesive resin layer, and the connection terminals and the wiring of the semiconductor chip are electrically connected by pressing or heating / pressing, and after sealing the semiconductor chip with resin, the supporting film is removed. A method for manufacturing a semiconductor device to be removed. (23) In the method for producing a semiconductor according to any one of (20) to (22), when the semiconductor chip is electrically connected to the laminated base material having the wiring formed on the support film, the semiconductor may be pressurized or heated and pressurized. A method for manufacturing a semiconductor device, comprising: applying ultrasonic vibration in a plane direction of a chip.

(24) A semiconductor chip having protruding connection terminals, external terminals directly connected to the connection terminals of the semiconductor chip, a resin for sealing the semiconductor chip, and a metal column penetrating the resin for sealing. And a semiconductor device whose external terminals are formed in close contact with an outer surface formed by a sealing resin. (25) The protruding connection terminal of the semiconductor chip is a bump containing at least one or more components of lead, tin, gold, silver, copper, nickel, bismuth, indium, zinc, palladium, and phosphorus. 3. The semiconductor device according to claim 1. (26) The semiconductor device according to (24), wherein the protruding connection terminal of the semiconductor chip is a bump formed of an insulating resin containing a conductive filler.

(27) A metal foil having metal pillars formed thereon and a semiconductor chip having a protruding connection terminal are overlapped so that the connection terminal and the metal foil are in contact with each other, and the semiconductor chip is connected by pressing or heating / pressing. After electrically connecting the terminals to the metal foil, sealing the semiconductor chip with resin, etching away unnecessary portions of the metal foil and exposing the metal pillars embedded in the sealing resin. Method. (28) An adhesive resin layer is formed on a metal foil on which metal pillars are formed, and a semiconductor chip having projecting connection terminals is overlaid so that the connection terminals and the metal foil are in contact with each other via the adhesive resin layer, and pressurized. Alternatively, the connection terminals of the semiconductor chip are electrically connected to the metal foil by applying heat and pressure, and after sealing the semiconductor chip with a resin, unnecessary portions of the metal foil are removed by etching and embedded in a sealing resin. A method of manufacturing a semiconductor device exposing a metal pillar. (29) An adhesive resin layer is formed on a connection terminal forming surface of a semiconductor chip having protruding connection terminals, and a metal foil on which metal columns are formed is connected between the connection terminal of the semiconductor chip and the metal foil via the adhesive resin layer. After connecting, the connection terminals of the semiconductor chip and the metal foil are electrically connected by pressing or heating / pressing, and after sealing the semiconductor chip with resin,
A method of manufacturing a semiconductor device, in which unnecessary portions of a metal foil are removed by etching and metal columns embedded in a sealing resin are exposed. (30) In the method of manufacturing a semiconductor according to any one of (27) to (29), when electrically connecting a semiconductor chip having a protruding connection terminal to a metal foil having a metal column, pressurizing or heating / pressing. A method for manufacturing a semiconductor device, wherein ultrasonic vibration is applied in a plane direction of a semiconductor chip.

(31) A semiconductor chip having protruding connection terminals and a semiconductor chip having protruding connection terminals formed on a metal foil surface on which metal pillars and wirings are formed of metal having different etching conditions is provided. The connection terminals of the semiconductor chip and the wiring are electrically connected by pressing or heating / pressing, and after sealing the semiconductor chip with resin, the metal foil is removed by etching and sealing is performed. A method for manufacturing a semiconductor device exposing a metal pillar embedded in a resin. (32) An adhesive resin layer is formed on a wiring forming surface of a laminated base material in which metal pillars and wiring are formed on a metal foil surface with metals having different etching conditions, and a semiconductor chip having protruding connection terminals is formed on the laminated base material. Of the semiconductor chip and the connection terminals of the semiconductor chip via the adhesive resin layer.
The connection terminals of the semiconductor chip and the wiring are electrically connected by applying pressure, and after sealing the semiconductor chip with resin,
A method of manufacturing a semiconductor device in which a metal foil is etched away and a metal column embedded in a sealing resin is exposed. (33) A laminated substrate in which an adhesive resin layer is formed on a connection terminal forming surface of a semiconductor chip having projecting connection terminals, and a metal pillar and wiring are formed on a metal foil surface with a metal having different etching conditions, The connection terminals of the semiconductor substrate and the wiring of the laminated base material are overlapped so as to be in contact with each other via the adhesive resin layer. And then removing the metal foil by etching and exposing the metal pillars embedded in the sealing resin. (34) The method for manufacturing a semiconductor according to any one of (31) to (33), wherein the semiconductor chip having the protruding connection terminals and the laminated base material in which metal pillars and wiring are formed on the surface of the metal foil with a metal having different etching conditions. A method of manufacturing a semiconductor device, comprising applying ultrasonic vibration in the surface direction of a semiconductor chip together with pressurization or heating and pressurization when electrically connecting.

(35) A laminated substrate in which a metal foil on which metal columns are formed is bonded to a support film, and a semiconductor chip having protruding connection terminals are formed by connecting the connection terminals of the semiconductor chip and the metal foil of the laminated substrate. The connection terminals of the semiconductor chip and the metal foil are electrically connected by pressing or heating or pressurizing, and the semiconductor chip is sealed with resin,
A method for manufacturing a semiconductor device, in which unnecessary portions of a metal foil are removed by etching after removing a supporting film, and metal columns embedded in a sealing resin are exposed. (36) An adhesive resin layer is formed on a laminated base material in which a metal foil on which metal pillars are formed is bonded to a support film, and a semiconductor chip having protruding connection terminals is connected to the connection terminals of the semiconductor chip and the laminated base material. The metal foil and the metal foil are overlapped so as to be in contact with each other via the adhesive resin layer, and the connection terminals of the semiconductor chip and the metal foil are electrically connected by pressing or heating / pressing,
After sealing the semiconductor chip with resin and removing the supporting film, unnecessary portions of the metal foil are removed by etching,
A method of manufacturing a semiconductor device exposing a metal pillar embedded in a sealing resin. (37) An adhesive resin layer is formed on a connection terminal forming surface of a semiconductor chip having a protruding connection terminal, and a metal foil on which a metal column is formed is bonded to a support film to form a connection terminal of the semiconductor chip. And the metal foil of the laminated base material are laminated so as to be in contact with each other via the adhesive resin layer, and the connection terminals of the semiconductor chip and the metal foil are electrically connected by pressing or heating / pressing, and the semiconductor chip is bonded to the resin. And removing the supporting film, etching away unnecessary portions of the metal foil, and exposing the metal pillars embedded in the sealing resin. (38) The method for manufacturing a semiconductor according to any one of (35) to (37), wherein a semiconductor chip having protruding connection terminals and a metal foil on which metal pillars are formed are laminated on a support film to electrically support a laminated substrate. A method of manufacturing a semiconductor device, comprising applying ultrasonic vibration in the surface direction of a semiconductor chip together with pressurization or heating and pressurization when connecting.

(39) A semiconductor chip having protruding connection terminals and a semiconductor chip having protruding connection terminals and a semiconductor chip having protruding connection terminals formed on a surface of a metal foil bonded to a support film and having metal pillars and wiring formed of metal having different etching conditions on the surface of the metal foil. And the wiring of the laminated substrate are brought into contact with each other, and the connection terminals of the semiconductor chip and the wiring are electrically connected by pressing or heating / pressing, the semiconductor chip is sealed with resin, and the supporting film is sealed. A method of manufacturing a semiconductor device in which after removal, a metal foil is etched away and a metal column embedded in a sealing resin is exposed. (40) An adhesive resin layer is formed on a laminated base material in which metal pillars and wirings are formed of metals having different etching conditions on the surface of a metal foil bonded to a support film, and a semiconductor chip having protruding connection terminals is formed by a semiconductor. The connection terminals of the chip and the wiring of the laminated base material are overlapped so as to be in contact with each other with an adhesive resin layer interposed therebetween, and the connection terminals and the wiring of the semiconductor chip are electrically connected by pressing or heating / pressing. A method of manufacturing a semiconductor device in which a chip is sealed with a resin, a supporting film is removed, and then a metal foil is removed by etching, and a metal column embedded in the sealing resin is exposed. (41) A laminate in which an adhesive resin layer is formed on a connection terminal forming surface of a semiconductor chip having protruding connection terminals, and metal pillars and wirings are formed of metal having different etching conditions on a surface of a metal foil bonded to a support film. The base material is overlapped so that the connection terminals of the semiconductor chip and the wiring of the laminated base material are in contact with each other via the adhesive resin layer, and the connection terminals and the wiring of the semiconductor chip are electrically connected by pressing or heating / pressing. And sealing the semiconductor chip with resin, removing the support film, etching away the metal foil, and exposing the metal pillars embedded in the sealing resin. (42) In the method for manufacturing a semiconductor according to (39) to (41), a member having a semiconductor chip having a protruding connection terminal, a member having metal pillars and wiring formed on a metal foil surface with a metal having different etching conditions, and a support film A method for manufacturing a semiconductor device, comprising applying ultrasonic pressure in the surface direction of a semiconductor chip together with pressurization or heating and pressurization when electrically connecting a laminated base material to which a substrate is attached.

(43) The semiconductor chip having the protruding connection terminals and the laminated substrate having the metal wiring and the metal pillars formed on the support film is placed so that the connection terminals of the semiconductor chip and the wiring of the laminated substrate are in contact with each other. The connection terminal of the semiconductor chip is electrically connected to the wiring of the laminated base material by stacking, pressing or heating / pressing, and after sealing the semiconductor chip with resin, the supporting film is removed and the sealing resin is removed. A method of manufacturing a semiconductor device exposing a metal pillar embedded in a semiconductor device. (44) An adhesive resin layer is formed on a laminated base material in which metal wiring and metal pillars are formed on a support film, and a semiconductor chip having projecting connection terminals is connected to the connection terminals of the semiconductor chip and the wiring of the laminated base material. Are stacked so that they are in contact with each other via the adhesive resin layer, and the connection terminals of the semiconductor chip and the wiring of the laminated base material are electrically connected by pressing or heating / pressing, and after sealing the semiconductor chip with resin. And a method of manufacturing a semiconductor device that removes a supporting film and exposes a metal pillar embedded in a sealing resin. (45) An adhesive resin layer is formed on a connection terminal forming surface of a semiconductor chip having protruding connection terminals, and a laminated base material having metal wiring and metal columns formed on a support film is laminated with connection terminals of the semiconductor chip. The wiring of the base material is overlapped so as to be in contact with the adhesive resin layer via the adhesive resin layer, and the connection terminals of the semiconductor chip and the wiring of the laminated base material are electrically connected by pressurizing or heating / pressing, and the semiconductor chip is bonded to the resin. And then removing the supporting film and exposing the metal pillars embedded in the sealing resin. (46) In the semiconductor manufacturing method according to any one of (43) to (45), a semiconductor chip having protruding connection terminals is electrically connected to a laminated substrate having metal wiring and metal columns formed on a support film. A method of manufacturing a semiconductor device, comprising: applying ultrasonic vibration in the surface direction of a semiconductor chip together with pressing or heating / pressing.

(47) A semiconductor chip, an external terminal directly connected to a connection terminal of the semiconductor chip, a resin for sealing the semiconductor chip, and a metal column penetrating the resin for sealing. A stacked semiconductor device in which a plurality of semiconductor devices that are formed in close contact along an outer surface formed by a sealing resin are stacked, and the external terminals of the semiconductor device on the upper side are placed below via the conductive adhesive. A stacked semiconductor device, which is formed so as to overlap with an exposed metal pillar of a semiconductor device, and is electrically connected by pressing a plurality of semiconductor devices. (48) Consisting of a semiconductor chip, an external terminal directly connected to a connection terminal of the semiconductor chip, a resin for sealing the semiconductor chip, and a metal column penetrating the sealing resin, and the external terminal is formed of a sealing resin. A stacked semiconductor device in which a plurality of semiconductor devices that are formed in close contact with each other along the outer surface to be formed are stacked, and the external terminals of the semiconductor device on the upper surface are soldered through a low-melting metal such as indium or tin. A stacked semiconductor device formed so as to overlap with an exposed metal pillar of a semiconductor device below, and electrically connected by heating a plurality of semiconductor devices. (49) A semiconductor chip, an external terminal directly connected to a connection terminal of the semiconductor chip, a resin for sealing the semiconductor chip, and a metal column penetrating the resin for sealing, and the external terminal is formed of a sealing resin. A stacked semiconductor device including a plurality of semiconductor devices closely formed along an outer surface to be formed, and a socket for stacking and fixing the plurality of semiconductor devices, wherein an external terminal of the semiconductor device on the upper side is formed. ,
A stacked semiconductor device which is formed so as to overlap with an exposed metal pillar of a lower semiconductor device, and is electrically connected by pressing a plurality of semiconductor devices.

[0021]

BEST MODE FOR CARRYING OUT THE INVENTION A protruding connection terminal of a semiconductor chip contains at least one or more components of lead, tin, gold, silver, copper, nickel, bismuth, indium, zinc, palladium and phosphorus. Bump or nickel,
A bump formed of a thermosetting insulating resin containing a conductive filler such as gold, silver, or copper can be used. As a method of forming connection terminals, a method of forming a ball bump using a metal wire on a chip electrode, an electrolytic or electroless plating method, a screen printing method, a dispensing method, a vapor deposition method, a method of arranging metal balls, an injection method, Can be used.

The external terminals formed in close contact with the outer surface formed by the sealing resin may have a structure in which the external terminals are formed on the surface of the sealing resin as shown in FIG. However, as shown in FIG. 1B, a structure in which the external terminal is embedded in the sealing resin so that one surface of the external terminal is exposed may be employed. Further, as shown in FIG. 1C, a structure in which a part of the external terminal is embedded in a sealing resin may be employed.

The external terminals formed are as shown in FIG.
As shown in FIG. 2B, only the pad may be used.
A wiring may be included as shown in FIG.

It is desirable that the exposed surfaces of the external terminals be plated with nickel, tin, gold, indium, solder, or the like.

As the metal foil, copper foil, aluminum foil, nickel foil, titanium foil, tin foil and the like can be used.

As a combination of metals having different etching conditions, copper and aluminum, copper and nickel, copper and tin, copper and titanium, and the like can be used. In the case of copper and aluminum, aluminum can be selectively etched away with a dilute acid or dilute alkali aqueous solution. In the case of copper and nickel, for example, an A process (product name, main component: ammonia, a chlorine compound) manufactured by Meltex Co., Ltd. as an etching solution of copper, and Melstrip N- manufactured by Meltex Co., Ltd. as an etching solution of nickel. By using 950 (product name, main components: sulfuric acid / nitric acid / phosphoric acid / acetic acid / hydrogen peroxide), selective etching can be performed. In the case of copper and tin or titanium, for example, an A process (product name) manufactured by Meltex Co., Ltd. as an etching solution for copper, and Enstrip TL-14 manufactured by Meltex Co., Ltd. as an etching solution for tin or titanium.
By using 2 conc (product name, main component: ammonium monohydrogen difluoride / hydrogen peroxide), selective etching can be performed. In the case of copper and titanium, an etching solution containing ferric chloride or cupric chloride as a main component can also be used as a copper etching solution.

The following can be used as the laminated base material in which the wiring is formed on the metal foil with the metal having different etching conditions. (1) A laminated base material formed by wiring-etching a first metal layer of a laminated metal foil having a structure in which at least two or more metal layers having different etching conditions are laminated. As a combination of metals having different etching conditions, copper and aluminum, copper and nickel, copper and titanium, copper and tin, and the like are possible. Use a laminated metal foil in which these metals are laminated to form a two-layer structure, or a three-layer structure in which a layer of aluminum, nickel, titanium, or tin is laminated between copper and copper. You may. (2) A laminated base material in which a wiring pattern is formed on a surface of a metal foil by plating. As the metal forming the plating wiring,
Copper, gold, silver, nickel, tin, palladium, or the like can be used. A plated wiring may be formed by combining these metals.

Examples of the laminated base material in which a metal foil is bonded to a support film include those obtained by bonding a support film and a metal foil with an adhesive, those obtained by forming a metal layer on the surface of a support film by sputtering, and those prepared by applying a resin to the metal foil. Can be used.

The following can be used as a laminated base material in which metal foils having wirings formed of metals having different etching conditions are laminated on a support film. (1) A laminated base material in which wiring is formed by preparing a laminated base material in which a metal foil is bonded to a support film and pattern-plating a metal having different etching conditions on the surface of the metal foil. (2) A laminated substrate formed by laminating at least two or more layers of metals having different etching conditions on a support film and then etching the first metal layer by wiring.

Examples of the laminated base material on which the metal wiring is formed on the support film include a support film and a metal foil bonded together by an adhesive, a support film having a metal layer formed on the surface by sputtering, or a metal foil. It is possible to use a base material prepared by casting a resin and wiring-etching these metal layers.

As the resin forming the support film, polyethylene terephthalate, polyethylene, polyimide, polyether sulfone, polyether ketone, polyether ether ketone, polyether imide, polyphenylene sulfide, polyarylate, polyacrylate, polyester, wholly aromatic A polyester liquid crystal polymer, an epoxy resin, a polyamide imide, and a siloxane-modified polyamide imide can be used.

As a method of forming the adhesive resin layer on the surface of the metal foil or the surface on which the wiring is formed, a method of printing, spin coating, or dispensing a varnish or a paste, or a method of pressing or laminating an adhesive film can be used.

When a varnish is used, it may be applied by printing or spin coating on the surface of the metal foil or the entire surface on which the wiring is formed, or may be applied only to a predetermined area using a printing mask. The area to be applied is arbitrary, but preferably includes an area to which the connection terminals of the chip are connected.

When a paste is used, the paste may be applied to the entire surface of the metal foil or the surface on which the wiring is formed by printing, may be applied to only a predetermined area using a print mask, or may be disposed in a predetermined area by dispensing. May be. The region where the paste is arranged is arbitrary, but preferably includes a region where the connection terminals of the chip are connected.

When an adhesive film is used, it may be adhered to the surface of the metal foil or the entire surface on which the wiring is formed by pressurization or pressurization / heating, or may be fixed by a vacuum laminator. Further, the adhesive film may be cut into individual pieces, placed on the surface of the metal foil, and fixed by pressing or pressing / heating, or may be fixed by using a roll laminator.
The area where the adhesive film is arranged is arbitrary, but preferably includes an area where the connection terminals of the chip are connected.

A resin which can be exposed and developed can be used as the adhesive resin. After forming the adhesive resin layer on the entire surface of the metal foil or the entire surface on which the wiring is formed, it is possible to arrange the adhesive resin layer at an arbitrary position by performing exposure and development. It is desirable to include the area to be connected.

As a method of forming the adhesive resin layer on the connection terminal forming surface of the semiconductor chip, a method of dispensing a paste or a method of attaching a cut adhesive film to individual pieces can be used. Alternatively, a method of printing and spin-coating a varnish or paste on the entire connection terminal forming surface of the semiconductor wafer, forming an adhesive resin layer by pressing or laminating an adhesive film, and then dicing into individual pieces can be used. .

The area where the adhesive resin layer is formed on the connection terminal forming surface of the semiconductor chip is arbitrary, and may be formed over the entire surface or may not include the area where the protruding connection terminals are formed.

As the adhesive resin, an uncured or semi-cured thermosetting resin, a photocurable resin, a thermoplastic resin, an uncured (uncrosslinked) rubber, capable of being exposed and developed, and having thermosetting properties. Resins and anaerobic adhesives can be used.

Examples of the thermosetting resin include epoxy resin, bismaleimide triazine resin, polyimide resin, cyanoacrylate resin, phenol resin, unsaturated polyester resin, melamine resin, urea resin, polyisocyanate resin, furan resin, resorcinol resin, xylene Resin, benzoguanamine resin, diallyl phthalate resin,
One or more selected from siloxane-modified epoxy resin, siloxane-modified polyamide-imide resin, benzocyclobutene resin, and the like, and, if necessary, a curing agent thereof;
A mixture of a curing accelerator and the like, or a mixture obtained by heating these to obtain a semi-cured state can be used. These resins can be applied directly to the place where the substrate and the semiconductor chip are connected, but a plastic film such as a polyethylene terephthalate film is used as a carrier, applied to the surface, heated and dried to form a dry film. It can be used as an adhesive film. As the photocurable resin, one or more selected from unsaturated polyester resins, polyester acrylate resins, urethane acrylate resins, silicone acrylate resins, epoxy acrylate resins, and the like, and, if necessary, a photoinitiator thereof, A mixture of a curing agent, a curing accelerator and the like, or a mixture obtained by exposing or heating them to a semi-cured state can be used. These resins can be applied directly to the place where the substrate and the semiconductor chip are connected, but a plastic film such as a polyethylene terephthalate film is used as a carrier, applied to the surface, heated and dried to form a dry film. It can be used as an adhesive film.

As the thermoplastic resin, polycarbonate resin, polysulfone resin, polyetherimide resin,
Thermoplastic polyimide resin, polyethylene tetrafluoride resin,
One selected from hexafluoride polypropylene resin, polyether ether ketone resin, vinyl chloride resin, polyethylene resin, polyamideimide resin, polyphenylene sulfide resin, polyoxybenzoate resin, etc.
Mixtures of more than one and, if necessary, a curing agent, a curing accelerator, and the like, or a mixture obtained by heating these to a semi-cured state can be used. These resins can be directly applied to the place where the substrate and the semiconductor chip are connected.However, a plastic film such as a polyethylene terephthalate film is used as a carrier, and the surface is applied.
It can be used as an adhesive film that has been dried by heating and dried. The unvulcanized (uncrosslinked) rubber is at least one selected from natural rubber, nitrile rubber, butadiene rubber, silicone rubber, isobutylene rubber, acrylic rubber, and, if necessary, a crosslinking agent thereof. Can be used, or those obtained by heating and semi-curing them can be used. These resins can be applied directly to the place where the substrate and the semiconductor chip are connected, but a plastic film such as a polyethylene terephthalate film is used as a carrier, applied to the surface, heated and dried to form a dry film. It can be used as an adhesive film.

As the resin that can be exposed and developed, a photocurable resin containing a water-soluble functional group such as a free carboxyl group, a sulfone group, or a phenolic hydroxyl group in the molecule can be used. If necessary, a mixture of a photoinitiator, a curing agent, a curing accelerator and the like can be used. These resins can be applied directly to the part connecting the substrate and the substrate, or the part connecting the substrate and the semiconductor chip.However, a plastic film such as a polyethylene terephthalate film is used as a carrier, applied to the surface, and dried by heating. It can be used as a dry film-shaped adhesive film. Photocurable resins that can be exposed and developed and have thermosetting properties include photocurable resins containing water-soluble functional groups such as free carboxyl groups, sulfone groups and phenolic hydroxyl groups in the molecule, epoxy resins, bismaleimides Triazine resin, polyimide resin, cyanoacrylate resin, phenol resin, unsaturated polyester resin, melamine resin, urea resin, polyisocyanate resin, furan resin, resorcinol resin, xylene resin, benzoguanamine resin, diallyl phthalate resin, siloxane-modified epoxy resin, siloxane A resin in which a thermosetting resin such as a modified polyamideimide resin or a benzocyclobutene resin is mixed at an arbitrary ratio can be used. These resins can be applied directly to the place where the substrate and the semiconductor chip are connected, but a plastic film such as a polyethylene terephthalate film is used as a carrier, applied to the surface, heated and dried to form a dry film. It can be used as an adhesive film.

As the developing solution, an aqueous solution of sodium carbonate, sodium hydrogen carbonate, tetramethylammonium hydroxide or the like can be used. Further, tetraethylene glycol dimethacrylate can be used as the anaerobic adhesive. These adhesive resin layers may be a copolymer or a mixture of different resins, and may further contain an inorganic filler such as silica or a metal oxide, such as nickel or gold. , Silver or other conductive particles, or resin particles obtained by plating these metals.

As a method of electrically connecting the protruding connection terminal of the semiconductor chip to the metal foil or the wiring, a method by pressurization or pressurization / heating can be used. Also,
It is also possible to use a connection method in which ultrasonic vibration is applied in the surface direction of the semiconductor chip together with pressurization or pressurization / heating. Becomes

In the connection method by pressurization or pressurization / heating, pressure: 0.1 to 10 MPa, temperature: normal temperature to 450
C., pressurization time: desirably in the range of 0.5 seconds to 5 minutes. In connection using ultrasonic vibration, a mechanism in which a member on which a metal foil or wiring is formed is fixed to a work plate, a semiconductor chip is fixed to a fixing device that is mounted in parallel with an axis for ultrasonic vibration, and the fixing device is pressed from above. It is preferable to use a device having the following conditions, and the connection conditions at that time are preferably in the range of the following conditions. A commercially available device for connecting in such a range is SH50MP.
(Trade name, manufactured by Altex Corporation). Conditions for this connection are as follows: pressure: 0.1 to 10 MPa, ultrasonic frequency: 20 to 500 kHz, vibration amplitude: 0.01 μm or more, pressurization time: 0.5 seconds or more, ultrasonic application time: 0 .
The application time of the ultrasonic wave and the pressurization may be such that the application of the ultrasonic wave is started within the pressurization time and the application is completed within the pressurization time. When the pressure is less than 0.1 MPa, the adhesive remains between the opposed connection terminals, the metal is not sufficiently diffused at the time of connection, and the connection resistance may be increased. When the pressure exceeds 10 MPa, the connection terminal And wiring may be destroyed. More preferably, 0.3-4.
The range is 0 MPa.

If the frequency of the ultrasonic wave is less than 20 kHz, the energy of transmission is large, and it is difficult to control the size to be suitable for connection. If the frequency exceeds 500 kHz, the energy of transmission is small, The adhesive may remain between the connection terminals, and the metal at the time of connection may not be sufficiently diffused, and the connection resistance may be increased. More preferably, 40
The range is １００100 kHz. Vibration amplitude is 0.01μ
If less than m, the adhesive remains between the facing connection terminals,
Diffusion of metal at the time of connection is not sufficient, and connection resistance may be increased. More preferably, it is in the range of 0.1 to 10 μm. If the pressurization time is less than 0.5 seconds, the adhesive remains between the opposed connection terminals, metal diffusion at the time of connection is not sufficient, connection resistance may increase, or connection reliability may decrease. When the pressurizing time is long, the productivity is reduced. More preferably, it is within 100 seconds. If the application time of the ultrasonic wave is less than 0.01 second, the adhesive remains between the facing connection terminals, the metal is not sufficiently diffused at the time of connection, the connection resistance increases, or the connection reliability decreases. If the application time is long, the productivity may be reduced, or the connection terminal or the wiring may be broken. More preferably, it is within 10 seconds. If the timing of ultrasonic application is not during pressurization, connection terminals may be damaged,
There is a possibility that positioning at the time of connection cannot be performed with high accuracy.

It is preferable from the viewpoint of connection reliability as a semiconductor device that the periphery of the connection portion between the metal foil and the connection terminal of the semiconductor chip is filled with an adhesive resin layer. When the semiconductor chip is electrically connected to the metal foil or wiring without forming an adhesive resin layer on the metal foil surface or the wiring forming surface, as a resin filling the gap between the chip and the metal foil surface or the wiring forming surface. Alternatively, a liquid thermosetting resin or a photocurable resin can be used. A resin containing an inorganic filler may be used.

When an adhesive resin layer is formed on the surface of the metal foil or the surface on which the wiring is formed and the semiconductor chip is electrically connected to the metal foil or the wiring, a thermosetting resin is used as a resin for sealing the entire chip. Can be used. The thermosetting resin may include an inorganic filler. In addition to sealing the entire chip, the gap between the semiconductor chip and the surface of the metal foil or the surface on which the wiring is formed may be filled with a sealing resin.

After the entire chip is sealed with resin, the support film can be removed not only by mechanical peeling but also by polishing, chemical etching, or plasma treatment.

As the metal foil on which the metal pillars are formed, a metal pillar formed by etching a first metal layer of a metal foil in which at least two layers having different etching conditions are stacked or a metal foil surface is formed by plating. What formed the metal pillar can be used.

The following can be used as a laminated base material having metal pillars and wirings formed on the surface of a metal foil with metals having different etching conditions. (1) A metal pillar formed by plating a metal having different etching conditions on the metal foil surface to form wiring. (2) A laminated metal foil in which three layers of metals having different etching conditions are laminated, a first metal layer is etched to form a metal column, and then a second metal layer is formed by wiring etching. (3) A member in which the first metal layer is subjected to wiring etching using a metal foil in which two layers of metals having different etching conditions are laminated, and then a metal column is formed by plating can be used.

The following can be used as the laminated base material in which the metal foil on which the metal columns are formed is bonded to the support film. (1) A laminated base material in which a metal foil on which metal columns are formed is bonded to a support film via an adhesive. (2) A laminated metal foil in which at least two layers of metals having different etching conditions are laminated is bonded to a support film via an adhesive, and a metal column is formed by etching the first metal layer. Laminated substrate.

The following can be used as a laminated base material in which a support film is bonded to a member in which metal pillars and wiring are formed of metal having different etching conditions on the surface of a metal foil. (1) A metal foil formed by pattern-plating a metal having different etching conditions on the surface of a metal foil to form wiring, and then bonding a metal pillar formed by plating to a support film. (2) A laminated metal foil in which at least two layers of metals having different etching conditions are laminated is prepared, the first metal layer is etched to form a wiring, and a metal column formed by plating is bonded to a support film. Things. (3) A metal foil prepared by laminating at least three layers of metals having different etching conditions, etching the first metal layer to form metal pillars, and then etching the second metal layer by wiring etching. Bonded to a support film. As a method of bonding with a support film, a method of bonding with an adhesive or a method of casting an insulating resin can be used. The formation of the metal pillars and the wirings may be performed before or after the bonding with the support film.

The following can be used as the laminated base material in which the metal wiring and the metal columns are formed on the support film. (1) A support film and a metal foil are bonded with an adhesive, a support film surface is formed with a metal layer by sputtering, or a metal foil is cast with a resin, and the metal layer is subjected to wiring etching. After that, a laminated substrate with metal columns formed by plating. (2) A metal foil obtained by laminating two layers of metals having different etching conditions on a supporting film is prepared. After the first metal layer is etched to form metal pillars, the second metal layer is wiring-etched. The formed laminated base material can be used.

After the semiconductor chip is sealed with a resin, roll polishing, lapping, chemical etching, and plasma etching can be used as a method of exposing the metal columns embedded in the sealing resin. Further, in the sealing step, it is possible to expose the metal pillar without polishing.

As a method of stacking a plurality of semiconductor devices, a method using an anisotropic conductive adhesive, a method using a low melting point metal such as solder, indium, or tin can be used. Further, in a state in which a plurality of semiconductor devices are stacked in the vertical direction, a method of fixing the end portion or a predetermined position by clipping the clip or a socket including a concave portion and a spring having a spring for accommodating a plurality of semiconductor devices, A method of stacking and installing a plurality of semiconductor devices in the vertical direction, and then closing and fixing the upper lid can also be used. Note that the semiconductor device or the stacked semiconductor device obtained by the present invention can be mounted on a substrate and used as a semiconductor package.

[0057]

Embodiment 1 An embodiment of the present invention will be described with reference to FIG. (1) Preparation of Metal Foil A copper foil 7 having a thickness of 12 μm was prepared. (2) Preparation of adhesive resin An adhesive resin having the following composition was prepared. (Composition) 200 g of phenoxy resin 300 g of bisphenol A type epoxy resin 30 g of 2-phenyl-4-methyl-5-hydroxymethylimidazole 350 g of ethyl acetate It was applied so as to form an adhesive layer, and dried at 100 ° C. for 10 minutes to produce a dry film. (3) Preparation of Metal Foil with Adhesive Resin Layer Adhesive resin formed in a film shape is cut out to the same size as a semiconductor chip, and then cut into a chip mounting area on the surface of copper foil 1. Place the film, temperature 9
Temporary pressure bonding was performed at 0 ° C. under a pressure of 0.5 MPa for 5 seconds to form an adhesive resin layer 8. (4) The surface protection film (polyethylene terephthalate film) of the chip connection adhesive resin layer 8 is peeled off, and the semiconductor chip 9 on which the connection terminals (gold bumps) 10 protruded by the ball bonding method are formed and the copper foil 7 are adhered. The semiconductor chip 9 is heated to 180 ° C. and pressed with a load of 1.0 N / bump while adjusting the ultrasonic vibration to a frequency of 50 kHz and a vibration amplitude of 2 μm while heating the semiconductor chip 9 to 180 ° C.
For 2 seconds, the metal foil and the semiconductor chip were electrically connected. (5) A copper foil to which a resin-encapsulated semiconductor chip is connected is placed in a mold, and a pressure of 6.
After pressurizing at 8 MPa for 90 seconds to inject and seal the epoxy-based sealing material, post-heating was performed at 180 ° C. for 5 hours to form the sealing resin layer 11. (6) Wiring formation After laminating a photosensitive dry film resist on the exposed copper surface, a mask that transmits light is superimposed on the wiring pattern shape, and the integrated exposure amount of ultraviolet light is 80 mJ / cm2.
Irradiation. After removing the unexposed resist by treating with an alkaline developing solution, treating with an etching solution containing ferric chloride or cupric chloride as a main component at a temperature of 45 ° C. and a time of 80 seconds, the external terminals are removed. No. 12 was formed. A nickel layer and a gold layer were formed on the surface of the external terminal 12 by plating.

Embodiment 2 An embodiment of the present invention will be described with reference to FIG. (1) Preparation of metal foil in which three layers of metals having different etching conditions are laminated. Copper layer 13 (thickness: 12 μm, first metal layer); nickel layer 1
4 (thickness 0.5 μm, second metal layer), copper layer 15 (thickness 6
5 μm, a third metal layer) was prepared. (2) Preparation of Adhesive Resin The same adhesive resin as in Example 1 was prepared. (3) Forming an Adhesive Resin Layer The adhesive resin formed in a film shape is cut out to a size substantially the same as the semiconductor chip, and placed in a semiconductor chip mounting area. The adhesive resin layer 17 was formed by temporary pressure bonding. (4) A semiconductor chip 18 having connection terminals (gold plated bumps) 19 protruding after the surface protection film (polyethylene terephthalate film) of the chip connection adhesive resin layer 17 is peeled off.
Are arranged such that the gold bump 19 and the metal foil 16 are in contact with each other with the adhesive resin layer 17 interposed therebetween.
The metal foil 16 and the semiconductor chip 18 were connected to each other by heating to a temperature of 0 ° C. and applying a pressure of 1.0 N / bump for 20 seconds. (5) The member to which the resin sealing chip is connected is placed in a mold, and the pressure is 6.8MP.
a, pressurizing for 90 seconds and injecting the epoxy sealing material,
The sealing resin layer 20 was formed by performing post-heating at 180 ° C. for 5 hours. (6) Wiring formation After removing the copper of the third metal layer 15 with an A process solution (alkali etching) manufactured by Meltex Co., Ltd., the nickel of the second metal layer 14 is melted by Meltex Co., Ltd. It was removed by treating with strip N-950 at a temperature of 45 ° C. for a time of 10 to 20 seconds. A photosensitive dry film resist is laminated on the exposed copper surface of the first metal layer 13, and a photomask that transmits light in the shape of an external terminal is aligned with a reference hole and overlapped, and ultraviolet light is integrated at an integrated exposure amount of 80 mJ / cm2. And an unexposed portion was removed with an alkaline developer to form an etching resist. The external terminal 21 is formed by treating the exposed metal portion with an etching solution containing ferric chloride / cupric chloride as a main component at a temperature of 45 ° C. for a time of 80 seconds. A nickel layer and a gold layer were formed on the surface by plating.

Embodiment 3 An embodiment of the present invention will be described with reference to FIG. (1) Preparation of a laminated base material in which a metal foil having wiring formed of metals having different etching conditions is bonded to a support film A copper foil 22 (thickness: 12 μm) is bonded to the surface of a support film 23 (polyethylene terephthalate film) with an adhesive. After laminating a photosensitive dry film resist on the surface of the copper foil 22 of the laminated base material 24, and applying a photomask that does not transmit light to the shape of the external terminal, and irradiating ultraviolet rays with an integrated exposure amount of 80 mJ / cm2, It was developed with an alkaline developer to form a plating resist. After performing nickel and gold plating, the plating resist was peeled off to form plated terminals 27. (2) Preparation of Adhesive Resin Layer The same adhesive resin as in Example 1 was prepared. (3) Forming an Adhesive Resin Layer The adhesive resin formed in a film shape is cut out to the same size as the chip, and the adhesive resin film is arranged so as to cover the wiring terminal portion connected to the protruding connection terminal of the chip. Then, temporary bonding was performed at a temperature of 90 ° C., a pressure of 0.5 MPa, and a time of 5 seconds to form an adhesive resin layer 28. (4) After peeling off the surface protection film (polyethylene terephthalate film) of the chip connection adhesive resin layer 28, the semiconductor chip 2
After the protruding connection terminals (gold bumps) 30 formed on the substrate 9 by a ball bonding method and the plating terminals 27 are overlapped and aligned so as to be in contact with each other via the adhesive resin layer 28, the semiconductor chip 29 is heated to 180 ° C. And load 1.
While applying pressure at 0N / bump, ultrasonic vibration is applied at a frequency of 50
The plating terminal 27 and the semiconductor chip 29 were electrically connected by adjusting the frequency to 2 kHz and the vibration amplitude to 2 μm for 0.5 seconds. (5) The laminated base to which the resin sealing chip is connected is placed in a mold, and the pressure is 6.8.
After the epoxy-based sealing material was injected by pressurizing with MPa for 90 seconds, the sealing resin layer 31 was formed by performing post-heating at 180 ° C. for 5 hours. (6) After sealing the film release resin, the support film 23 is peeled off, and the exposed copper is subjected to an A process manufactured by Meltex Co., Ltd. at a temperature of 45 ° C.
After removal by processing under the condition of time 30 seconds,
The external terminals 32 were formed by performing gold plating on the exposed plated terminals.

Embodiment 4 An embodiment of the present invention will be described with reference to FIG. (1) Preparation of a laminated base material in which three layers of metals having different etching conditions are laminated with a supporting film and a supporting film are laminated. Copper layer 33 (100 μm thick, first metal layer), nickel layer 34 (thickness 0) A laminated metal foil having a three-layer structure of 0.5 μm, a second metal layer) and a copper layer 35 (thickness, 12 μm, a third metal layer) is prepared, and the third metal layer and the support film 36 (polyethylene terephthalate film) are prepared. Was laminated with an adhesive to prepare a laminated base material 37. (2) Formation of metal pillars A dry film resist 38 is laminated on the copper surface of the first metal layer, a photomask that transmits light only in the area where the metal pillars are formed is irradiated, and ultraviolet light of 80 mJ / cm 2 is irradiated, and alkali development is performed. By treating with a liquid,
An etching resist 39 for forming a metal pillar was formed. First
The copper of the metal layer 33 was treated by an A process manufactured by Meltex Co., Ltd. under the conditions of a temperature of 45 ° C. and a time of 180 to 200 seconds to form a metal column 40 having a height of 100 μm. The nickel of the second metal layer 34 is made of Melstrip N-9 manufactured by Meltex Corporation.
The coating was peeled off at 50 at a temperature of 40 ° C. for a time of 10 to 20 seconds. (3) Preparation of adhesive resin The same adhesive resin as in Example 1 was prepared. (4) Forming the Adhesive Resin Layer The adhesive resin formed in a film shape is cut into a size substantially the same as the chip, and the adhesive film is arranged on the copper surface of the third metal layer 35, at a temperature of 90 ° C. and a pressure of 0. The adhesive resin layer 41 was formed by provisional pressure bonding at 5 MPa for 5 seconds.

(5) After the protective film (polyethylene terephthalate film) on the surface of the chip connecting adhesive resin layer 41 is peeled off, the semiconductor chip 4
On the semiconductor chip 4, the protruding connection terminals (gold bumps) 43 formed by a ball bonding method and the third metal layer 35 are overlapped on the second metal layer 35 via the adhesive resin layer 41.
2 was heated to 180 ° C., and while applying a pressure of 1.0 N / bump, ultrasonic vibration was applied at a frequency of 50 kHz and a vibration amplitude of 2
The thickness was adjusted to μm and added for 0.5 seconds to electrically connect the laminated substrate and the semiconductor chip. (6) The member to which the resin sealing chip is connected is placed in a mold, and the pressure is 6.8MP.
After a 90-second pressurization was performed to inject an epoxy-based encapsulant and encapsulated, post-heating was performed at 180 ° C. for 5 hours to form an encapsulating resin layer 44. (7) Exposure of metal pillars After peeling off the stack support films 36 of the plurality of semiconductor devices, the sealing resin was polished until the metal pillars were exposed by lapping. (8) Stack of Plural Semiconductor Devices An anisotropic conductive resin film 46 in which nickel particles (average particle diameter 3 μm, 2 vol%) are dispersed in an adhesive resin having the composition prepared in Example 1 is used to form external terminals of the semiconductor device. Pasted on the surface. After vertically stacking a plurality of semiconductor devices so that the external terminals and the metal pillars overlap, the plurality of semiconductor devices were electrically connected by pressing for 20 seconds while heating to 180 ° C.

[0062]

As described above, according to the present invention,
It can be made smaller and thinner, and is less affected by thermal stress.
A structure of a semiconductor device with high connection reliability and a method for manufacturing the same can be provided.

[Brief description of the drawings]

FIGS. 1A to 1C are cross-sectional views illustrating a structure of an external terminal formed in close contact with an outer surface formed by a sealing resin. FIG. 3 is a diagram for explaining an external terminal according to the present invention.

FIGS. 2A to 2C are views of the semiconductor device of the present invention as viewed from an external terminal surface.

FIGS. 3A to 3F are cross-sectional views in respective steps for describing Example 1 of the present invention.

FIGS. 4A to 4H are cross-sectional views in respective steps for explaining a second embodiment of the present invention.

FIGS. 5A to 5J are cross-sectional views in each step for explaining a third embodiment of the present invention.

FIGS. 6 (a) to (l) are cross-sectional views in respective steps for describing Embodiment 4 of the present invention.

[Explanation of symbols]

1, 9, 18, 29, 42. Semiconductor chip 2, 10, 19, 30, 43. Projecting connection terminal 3, 6, 11, 20, 31, 44. Sealing resin 4, 5, 12, 21, 32, 45. External terminal 7, 22. Copper foil 8, 17, 28, 41. Adhesive resin layer 13, 33. Copper layer (first metal layer) 14, 34. Nickel layer (second metal layer) 15, 35. Copper layer (third metal layer) 16, 24, 37. Laminated substrate 23, 36. Support film 25, 38. Dry film resist 26. Plating resist 27. Plating terminal 39. Etching resist for forming metal pillars 40. Metal pillar 46. Anisotropic conductive adhesive film 47. Conductive particles

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 25/10 H01L 23/52 C 25/11 25/14 Z 25/18 (72) Inventor Norio Moriike 48 Wadai, Tsukuba, Ibaraki Prefecture Hitachi Chemical Co., Ltd. (72) Inventor Takanori Hiroki 48 Wadai, Tsukuba, Ibaraki Prefecture Hitachi Chemical Co., Ltd.F-term (Research) 5F044 QQ04 RR03 RR18 RR19 5F061 AA01 BA07 CA22 CB13

Claims (49)

[Claims] 1. A semiconductor chip having a protruding connection terminal, an external terminal directly connected to the connection terminal of the semiconductor chip, and a resin for sealing the semiconductor chip, wherein the external terminal is formed of a sealing resin. Semiconductor device formed in close contact with the outer surface of the semiconductor device. 2. The semiconductor device according to claim 1, wherein the protruding connection terminal of the semiconductor chip is
2. The semiconductor device according to claim 1, wherein the bump is a bump containing at least one component among lead, tin, gold, silver, copper, nickel, bismuth, indium, zinc, and palladium. 3. The semiconductor device according to claim 1, wherein the protruding connection terminal of the semiconductor chip is a bump formed of an insulating resin containing a conductive filler. 4. A semiconductor chip having a metal foil and a protruding connection terminal is overlaid so that the metal foil and the connection terminal of the semiconductor chip are in contact with each other. After the semiconductor chip is sealed with a resin or the gap between the semiconductor chip and the metal foil is filled with a liquid resin and the semiconductor chip is sealed with the resin, unnecessary portions of the metal foil are removed by etching. Semiconductor device manufacturing method. 5. An adhesive resin layer is formed on a metal foil, and a semiconductor chip having a protruding connection terminal is overlaid so that the metal foil and the connection terminal of the semiconductor chip are in contact with each other via the adhesive resin layer. A method of manufacturing a semiconductor device in which a connection terminal of a semiconductor chip is electrically connected to a metal foil by applying heat and pressure, the semiconductor chip is sealed with a resin, and unnecessary portions of the metal foil are removed by etching. 6. An adhesive resin layer is formed on a connection terminal forming surface of a semiconductor chip having a protruding connection terminal, and the metal foil and the connection terminal of the semiconductor chip are overlapped so as to be in contact with each other via the adhesive resin layer. Alternatively, a method for manufacturing a semiconductor device in which a connection terminal of a semiconductor chip is electrically connected to a metal foil by applying heat and pressure, the semiconductor chip is sealed with a resin, and unnecessary portions of the metal foil are removed by etching. 7. The method for manufacturing a semiconductor according to claim 4, wherein when the semiconductor chip having the protruding connection terminals is electrically connected to the metal foil, the semiconductor chip is pressed or heated and pressed. A method of manufacturing a semiconductor device, wherein ultrasonic vibration is applied in a plane direction of a semiconductor device. 8. Wiring is formed on a metal foil with a metal having different etching conditions, and a semiconductor chip having projecting connection terminals is overlapped so that the wiring formed on the metal foil and the connection terminals of the semiconductor chip are in contact with each other. Alternatively, the wiring and the connection terminals of the semiconductor chip are electrically connected by applying heat and pressure, and the semiconductor chip is sealed with a resin, or the gap between the semiconductor chip and the metal foil is filled with a liquid resin, and the semiconductor chip is sealed with a resin. A method for manufacturing a semiconductor device in which unnecessary metal foil is removed by etching after sealing with a semiconductor device. 9. A wiring is formed on a metal foil with a metal having different etching conditions, an adhesive resin layer is formed on a wiring forming surface of the metal foil, and then a connection terminal of the semiconductor chip having projecting connection terminals is formed on the metal foil. After the formed wiring is overlapped with the adhesive resin layer so as to be in contact therewith, the connection terminals of the semiconductor chip and the wiring are electrically connected by pressing or heating / pressing, and the semiconductor chip is sealed with resin. And a method of manufacturing a semiconductor device for removing unnecessary metal foil by etching. 10. A wiring is formed on a metal foil with a metal having different etching conditions, an adhesive resin layer is formed on a connection terminal forming surface of a semiconductor chip having protruding connection terminals, and a connection is formed between the connection terminal of the semiconductor chip and the metal foil. After the formed wiring is overlapped with the adhesive resin layer so as to be in contact therewith, the connection terminals of the semiconductor chip and the wiring are electrically connected by pressing or heating / pressing, and the semiconductor chip is sealed with resin. And a method of manufacturing a semiconductor device for removing unnecessary metal foil by etching. 11. The method of manufacturing a semiconductor according to claim 8, wherein a pressure is applied when electrically connecting a wiring formed of a metal having different etching conditions to a semiconductor chip having protruding connection terminals and a metal foil. Alternatively, a method of manufacturing a semiconductor device, characterized by applying ultrasonic vibration in the surface direction of a semiconductor chip while applying heat and pressure. 12. A laminated base material in which a metal foil is bonded to a support film, and a semiconductor chip having a protruding connection terminal are stacked so that the metal foil and the connection terminal of the semiconductor chip are in contact with each other, and are pressed or heated / pressed. By electrically connecting the connection terminals of the semiconductor chip to the metal foil and sealing the semiconductor chip with a resin, or filling the gap between the semiconductor chip and the metal foil with a liquid resin, and sealing the semiconductor chip with the resin Then, the supporting film is removed, and unnecessary portions of the metal foil are removed by etching. 13. An adhesive resin layer is formed on a surface of a metal foil of a laminated base material in which a metal foil is bonded to a support film, and a semiconductor chip having a protruding connection terminal is bonded to a connection terminal of the metal foil and the semiconductor chip. The connection terminals of the semiconductor chip and the metal foil were electrically connected by pressing or heating / pressing with the conductive resin layer interposed therebetween, the semiconductor chip was sealed with resin, and the support film was removed. Thereafter, a method of manufacturing a semiconductor device in which unnecessary portions of a metal foil are removed by etching. 14. A laminated base material in which an adhesive resin layer is formed on a connection terminal forming surface of a semiconductor chip having projecting connection terminals, and a metal foil is bonded to a support film, the connection terminal between the metal foil and the semiconductor chip is formed. The connection terminals of the semiconductor chip and the metal foil are electrically connected by pressing or heating / pressing so as to be in contact with each other via the adhesive resin layer, the semiconductor chip is sealed with resin, and the support film is removed. Then, an unnecessary portion of the metal foil is removed by etching. 15. The method for manufacturing a semiconductor according to claim 12, wherein a pressure is applied when electrically connecting the semiconductor chip having the protruding connection terminals and the laminated base material in which the metal foil is bonded to the support film. Alternatively, a method of manufacturing a semiconductor device, wherein ultrasonic vibration is applied in the surface direction of a semiconductor chip together with heating and pressing. 16. A semiconductor chip having a laminated base material in which a metal foil having wirings formed of metals having different etching conditions is bonded to a support film and a semiconductor chip having protruding connection terminals are connected to the wiring of the laminated base material and the connection terminals of the semiconductor chip. The connection terminals of the semiconductor chip and the wiring are electrically connected by pressing or heating / pressing, and the semiconductor chip is sealed with resin or the gap between the semiconductor chip and the metal foil is A method of manufacturing a semiconductor device in which a resin is filled, a semiconductor chip is sealed with the resin, the support film is removed, and unnecessary portions of the metal foil are removed by etching. 17. A semiconductor chip having an adhesive resin layer formed on a wiring forming surface of a laminated base material in which a metal foil having wiring formed of metal having different etching conditions is bonded to a support film, and having a protruding connection terminal, The wiring of the laminated base material and the connection terminal of the semiconductor chip are overlapped so as to be in contact with each other via an adhesive resin layer, and the connection terminal and the wiring of the semiconductor chip are electrically connected by pressing or heating / pressing, and the semiconductor chip is connected. A method for manufacturing a semiconductor device in which an unnecessary portion of a metal foil is removed by etching after sealing with resin and removing a support film. 18. A laminated base material in which an adhesive resin layer is formed on a connection terminal forming surface of a semiconductor chip having protruding connection terminals, and a metal foil in which wiring is formed with a metal having different etching conditions is bonded to a support film. The connection terminals of the semiconductor chip and the wiring of the laminated base material are overlapped so as to be in contact with each other via an adhesive resin layer, and the connection terminals and the wiring of the semiconductor chip are electrically connected by pressing or heating / pressing, and the semiconductor A method of manufacturing a semiconductor device in which a chip is sealed with a resin, a support film is removed, and unnecessary portions of a metal foil are removed by etching. 19. The method for manufacturing a semiconductor according to claim 16, wherein a laminated base material in which a metal foil having wiring formed of metal having different etching conditions is bonded to the semiconductor chip and the support film is electrically connected. A method of manufacturing a semiconductor device, comprising: applying ultrasonic vibration in the surface direction of a semiconductor chip together with pressing or heating / pressing. 20. A semiconductor chip having a laminated base material on which a wiring is formed on a support film and a protruding connection terminal is superimposed such that the wiring of the laminated base material and the connection terminal of the semiconductor chip are in contact with each other, and are pressurized or heated. The connection terminals and the wiring of the semiconductor chip are electrically connected by applying pressure, and the semiconductor chip is sealed with resin, or the gap between the semiconductor chip and the support film is filled with liquid resin, and the semiconductor chip is sealed with resin. A method for manufacturing a semiconductor device in which a supporting film is removed after stopping. 21. A semiconductor chip having an adhesive resin layer formed on a wiring forming surface of a laminated base material having wirings formed on a support film and having projecting connection terminals is connected to the wiring of the laminated base material and the connection terminals of the semiconductor chip. And the connection terminals of the semiconductor chip are electrically connected to each other by pressing or heating / pressing, and the semiconductor chip is sealed with a resin. And a method for manufacturing a semiconductor device for removing a semiconductor device. 22. A laminated base material in which an adhesive resin layer is formed on a connection terminal forming surface of a semiconductor chip having protruding connection terminals and wiring is formed on a support film, the laminated base material between the connection terminals of the semiconductor chip and the laminated base material. After the wiring is overlapped so as to be in contact with the adhesive resin layer, the connection terminals of the semiconductor chip and the wiring are electrically connected by pressing or heating / pressing, and after sealing the semiconductor chip with resin, the supporting film is formed. And a method for manufacturing a semiconductor device for removing a semiconductor device. 23. The method of manufacturing a semiconductor according to claim 20, wherein the semiconductor chip and the laminated base material having the wiring formed on the support film are electrically connected to each other by pressing or heating.
A method for manufacturing a semiconductor device, comprising: applying ultrasonic vibration in the surface direction of a semiconductor chip together with pressurization. 24. A semiconductor chip having a protruding connection terminal, an external terminal directly connected to the connection terminal of the semiconductor chip, a resin for sealing the semiconductor chip, and a metal pillar penetrating the resin for sealing. A semiconductor device in which the external terminals are closely formed along an outer surface formed by a sealing resin. 25. A connection terminal protruding from a semiconductor chip,
25. The semiconductor device according to claim 24, wherein the bump is a bump containing at least one component among lead, tin, gold, silver, copper, nickel, bismuth, indium, zinc, palladium, and phosphorus. 26. A protruding connection terminal of the semiconductor chip,
25. The semiconductor device according to claim 24, wherein the bump is a bump formed of an insulating resin containing a conductive filler. 27. A semiconductor chip having metal pillars formed thereon and a semiconductor chip having protruding connection terminals are overlapped so that the connection terminals of the metal foil and the semiconductor chip are in contact with each other, and the semiconductor chip is pressed or heated / pressed. After electrically connecting the connection terminals and the metal foil and sealing the semiconductor chip with resin,
Alternatively, a semiconductor that fills a gap between a semiconductor chip and a metal foil with a liquid resin, seals the semiconductor chip with the resin, etches away unnecessary portions of the metal foil, and exposes metal columns embedded in the sealing resin. Device manufacturing method. 28. An adhesive resin layer is formed on a metal foil having metal pillars formed thereon, and a semiconductor chip having projecting connection terminals is connected so that the metal foil and the connection terminals of the semiconductor chip are in contact with each other via the adhesive resin layer. The connection terminals of the semiconductor chip and the metal foil are electrically connected by stacking, pressing or heating / pressing, and after sealing the semiconductor chip with resin, unnecessary portions of the metal foil are etched away and sealed. A method of manufacturing a semiconductor device exposing a metal pillar embedded in a sealing resin. 29. An adhesive resin layer is formed on a connection terminal forming surface of a semiconductor chip having projecting connection terminals, and a metal foil on which metal pillars are formed is used. The connection terminals of the semiconductor chip are electrically connected to the metal foil by pressing or heating / pressing, and after sealing the semiconductor chip with resin, unnecessary portions of the metal foil are etched. A method of manufacturing a semiconductor device that removes and exposes a metal pillar embedded in a sealing resin. 30. The method for manufacturing a semiconductor according to claim 27, wherein the semiconductor chip having the protruding connection terminals is electrically connected to the metal foil on which the metal pillars are formed. A method of manufacturing a semiconductor device, wherein ultrasonic vibration is applied in a plane direction of a semiconductor chip. 31. A semiconductor chip having a metal pillar and wiring formed of metal having different etching conditions on the surface of a metal foil, and a semiconductor chip having protruding connection terminals. The connection terminals of the semiconductor chip and the wiring are electrically connected by overlapping or pressing or heating / pressing, and the semiconductor chip is sealed with resin or the gap between the semiconductor chip and the metal foil is filled with liquid resin. And then sealing the semiconductor chip with a resin, etching away the metal foil, and exposing the metal pillars embedded in the sealing resin. 32. An adhesive resin layer is formed on a wiring forming surface of a laminated base material in which metal pillars and wiring are formed on a metal foil surface with metals having different etching conditions, and a semiconductor chip having projecting connection terminals is laminated. The wiring of the base material and the connection terminal of the semiconductor chip are overlapped so as to be in contact with each other via the adhesive resin layer, and the connection terminal and the wiring of the semiconductor chip are electrically connected by pressing or heating / pressing, and the semiconductor chip is connected. A method of manufacturing a semiconductor device in which after sealing with a resin, a metal foil is removed by etching and a metal column embedded in the sealing resin is exposed. 33. A laminated base material in which an adhesive resin layer is formed on a connection terminal forming surface of a semiconductor chip having projecting connection terminals, and a metal pillar and wiring are formed on a metal foil surface with a metal having different etching conditions. The connection terminals of the semiconductor chip and the wiring of the laminated base material are overlapped so as to be in contact with each other via the adhesive resin layer, and the connection terminals and the wiring of the semiconductor chip are electrically connected by pressing or heating / pressing, and the semiconductor chip A method of manufacturing a semiconductor device in which, after sealing is performed with a resin, the metal foil is removed by etching, and the metal pillars embedded in the sealing resin are exposed. 34. The method for manufacturing a semiconductor according to claim 31, wherein the semiconductor chip having the protruding connection terminals and the laminated base material on which the metal pillars and the wiring are formed on the surface of the metal foil with the metal having different etching conditions. A method of manufacturing a semiconductor device, comprising applying ultrasonic vibration in the surface direction of a semiconductor chip together with pressurization or heating and pressurization when electrically connecting. 35. A laminated substrate in which a metal foil on which a metal column is formed is bonded to a support film, and a semiconductor chip having projecting connection terminals is brought into contact with the connection terminal of the semiconductor chip and the metal foil of the laminated substrate. After connecting, the connection terminals of the semiconductor chip and the metal foil are electrically connected by pressing or heating / pressing, and after sealing the semiconductor chip with resin,
Or filling the gap between the semiconductor chip and the metal foil with a liquid resin, sealing the semiconductor chip with the resin, removing the support film, etching away unnecessary portions of the metal foil, and embedded in the sealing resin. A method for manufacturing a semiconductor device exposing a metal pillar. 36. An adhesive resin layer is formed on a laminated base material in which a metal foil on which metal columns are formed is bonded to a support film,
A semiconductor chip having protruding connection terminals is overlapped so that the connection terminals of the semiconductor chip and the metal foil of the laminated base material are in contact with each other via an adhesive resin layer, and the connection terminals of the semiconductor chip are pressed or heated / pressed. And the metal foil are electrically connected, the semiconductor chip is sealed with resin, the support film is removed, unnecessary portions of the metal foil are etched away, and the metal columns embedded in the sealing resin are exposed. A method of manufacturing a semiconductor device to be manufactured. 37. A semiconductor chip having protruding connection terminals, wherein an adhesive resin layer is formed on a connection terminal formation surface, and a metal foil on which metal pillars are formed is bonded to a support film by using a laminated base material of the semiconductor chip. The connection terminals and the metal foil of the laminated base material are overlapped so as to be in contact with each other via the adhesive resin layer, and the connection terminals of the semiconductor chip and the metal foil are electrically connected by pressing or heating / pressing. Is sealed with a resin, the supporting film is removed, and then unnecessary portions of the metal foil are removed by etching, and the metal columns embedded in the sealing resin are exposed. 38. The method for manufacturing a semiconductor according to claim 35, wherein a semiconductor chip having protruding connection terminals and a metal foil on which metal pillars are formed are laminated on a support film to electrically laminate a base material. A method of manufacturing a semiconductor device, comprising applying ultrasonic vibration in the surface direction of a semiconductor chip together with pressurization or heating and pressurization when connecting. 39. A semiconductor chip having a metal pillar and a wiring formed of a metal having different etching conditions on a surface of a metal foil bonded to a support film, and a semiconductor chip having protruding connection terminals are connected to connection terminals of the semiconductor chip. Laminate so that the wiring of the laminated substrate is in contact with it, pressurize or heat and pressurize to electrically connect the connection terminals of the semiconductor chip and the wiring and seal the semiconductor chip with resin, or A semiconductor device that fills the gap between the metal foil with a liquid resin, seals the semiconductor chip with the resin, removes the support film, etches away the metal foil, and exposes the metal pillars embedded in the sealing resin. Manufacturing method. 40. A semiconductor chip having connection terminals protruding by forming an adhesive resin layer on a laminated base material in which metal pillars and wirings are formed with metals having different etching conditions on the surface of a metal foil bonded to a support film. The connection terminals of the semiconductor chip and the wiring of the laminated base material are overlapped so as to be in contact with each other via the adhesive resin layer, and the connection terminals of the semiconductor chip and the wiring are electrically connected by pressing or heating / pressing. After sealing the semiconductor chip with resin and removing the support film,
A method of manufacturing a semiconductor device in which a metal foil is etched away and a metal column embedded in a sealing resin is exposed. 41. An adhesive resin layer is formed on a connection terminal forming surface of a semiconductor chip having protruding connection terminals, and metal pillars and wirings are formed on the surface of a metal foil bonded to a support film using metals having different etching conditions. The laminated base material is overlapped so that the connection terminals of the semiconductor chip and the wiring of the laminated base material are in contact with each other via the adhesive resin layer, and the connection terminals and the wiring of the semiconductor chip are formed by pressing or heating / pressing. After electrically connecting, sealing the semiconductor chip with resin, removing the support film, etching away the metal foil,
A method of manufacturing a semiconductor device exposing a metal pillar embedded in a sealing resin. 42. The method of manufacturing a semiconductor according to claim 39, wherein the metal pillar and the wiring are formed of a metal having different etching conditions on the surface of the metal foil bonded to the semiconductor chip having the protruding connection terminals and the support film. A method for manufacturing a semiconductor device, comprising: applying ultrasonic pressure in a surface direction of a semiconductor chip together with pressurization or heating and pressurization when electrically connecting the laminated base materials. 43. A laminated substrate in which metal wiring and metal pillars are formed on a supporting film, and a semiconductor chip having protruding connection terminals are stacked so that the connection terminals of the semiconductor chip and the wiring of the laminated substrate are in contact with each other. The connection terminals of the semiconductor chip are electrically connected to the wiring of the laminated base material by pressurizing or heating / pressing, and the semiconductor chip is sealed with resin, or the gap between the semiconductor chip and the support film is filled with liquid resin. And then sealing the semiconductor chip with a resin, removing the support film, and exposing the metal pillars embedded in the sealing resin. 44. An adhesive resin layer is formed on a laminated substrate in which metal wiring and metal columns are formed on a support film, and a semiconductor chip having protruding connection terminals is connected to the connection terminal of the semiconductor chip and the laminated substrate. The wiring is overlapped so as to be in contact with the adhesive resin layer, and the connection terminals of the semiconductor chip and the wiring of the laminated base material are electrically connected by pressing or heating / pressing, and the semiconductor chip is sealed with resin. And removing the supporting film and exposing the metal pillars embedded in the sealing resin. 45. A laminated base material in which an adhesive resin layer is formed on a connection terminal forming surface of a semiconductor chip having projecting connection terminals, and a metal wiring and a metal column are formed on a support film, are connected to the connection terminals of the semiconductor chip. And the wiring of the laminated base material are overlapped so as to be in contact with each other via the adhesive resin layer, and the connection terminals of the semiconductor chip and the wiring of the laminated base material are electrically connected by pressurizing or heating / pressing the semiconductor chip. A method of manufacturing a semiconductor device, in which after sealing with a resin, the support film is removed and the metal pillars embedded in the sealing resin are exposed. 46. The method for manufacturing a semiconductor according to claim 43, wherein the semiconductor chip having the protruding connection terminals is electrically connected to the laminated base material on which the metal wiring and the metal columns are formed on the support film. A method of manufacturing a semiconductor device, comprising: applying ultrasonic vibration in the surface direction of a semiconductor chip together with pressing or heating / pressing. 47. A semiconductor chip having a protruding connection terminal, an external terminal directly connected to the connection terminal of the semiconductor chip, a resin for sealing the semiconductor chip, and a metal column penetrating the resin for sealing. A stacked semiconductor device in which a plurality of semiconductor devices whose external terminals are closely formed along an outer surface formed by a sealing resin are stacked, and the external terminals of the upper semiconductor device are electrically conductive adhesive. A stacked semiconductor device formed so as to overlap with an exposed metal pillar of a semiconductor device located below the semiconductor device, and electrically connected by pressing a plurality of semiconductor devices. 48. A semiconductor chip having a protruding connection terminal, an external terminal directly connected to the connection terminal of the semiconductor chip, a resin sealing the semiconductor chip, and a metal column penetrating the sealing resin. A stacked semiconductor device in which a plurality of semiconductor devices whose external terminals are closely formed along an outer surface formed by a sealing resin are stacked, and the external terminals of the semiconductor device on the upper side are solder, indium, Or formed so as to overlap the exposed metal pillar of the underlying semiconductor device via a low melting point metal such as tin,
A stacked semiconductor device, wherein a plurality of semiconductor devices are electrically connected by heating. 49. A semiconductor chip having a protruding connection terminal, an external terminal directly connected to the connection terminal of the semiconductor chip, a resin for sealing the semiconductor chip, and a metal column penetrating the resin for sealing. A stacked semiconductor device including a plurality of semiconductor devices whose external terminals are closely formed along an outer surface formed by a sealing resin, and a socket for stacking and fixing the plurality of semiconductor devices,
A stacked semiconductor device in which external terminals of an upper semiconductor device are formed so as to overlap with exposed metal pillars of the lower semiconductor device, and the plurality of semiconductor devices are electrically connected by press-contacting the plurality of semiconductor devices; .