JP2003347460A - Electronic equipment - Google Patents
Electronic equipmentInfo
- Publication number
- JP2003347460A JP2003347460A JP2002153313A JP2002153313A JP2003347460A JP 2003347460 A JP2003347460 A JP 2003347460A JP 2002153313 A JP2002153313 A JP 2002153313A JP 2002153313 A JP2002153313 A JP 2002153313A JP 2003347460 A JP2003347460 A JP 2003347460A
- Authority
- JP
- Japan
- Prior art keywords
- circuit element
- base
- electronic device
- power amplifier
- amplifier circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
Landscapes
- Wire Bonding (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、携帯電話やパーソ
ナルコンピュータ、ＰＤＡ等の各種電子機器に用いられ
る電子装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic device used for various electronic devices such as a mobile phone, a personal computer, and a PDA.
【０００２】[0002]
【従来の技術】従来より、携帯電話等の電子機器にはパ
ワーアンプ等の電子装置が組み込まれている。このよう
な従来の電子装置としては、例えば図３に示すように、
基体３１ａの上面に枠体３１ｂを取着させて枠体３１ｂ
の内側にキャビティ３４を形成し、このキャビティ３４
内に電子部品素子３２をフェイスダウンボンディングに
より収容させた構造のものが知られており、キャビティ
３４を樹脂材３３で封止することによって電子部品素子
３２が外気と遮断された形でキャビティ３４内に収容さ
れる。2. Description of the Related Art Conventionally, electronic equipment such as a power amplifier is incorporated in electronic equipment such as a portable telephone. As such a conventional electronic device, for example, as shown in FIG.
The frame 31b is attached to the upper surface of the base 31a.
A cavity 34 is formed inside the
A structure in which the electronic component element 32 is accommodated by face-down bonding is known, and the electronic component element 32 is sealed from the outside air by sealing the cavity 34 with a resin material 33. To be housed.
【０００３】尚、上述した電子装置の基体及び枠体は、
従来周知のプレス成形法により一体的に形成するのが一
般的である。即ち、キャビティに対応した貫通穴を有す
るグリーンシート及びキャビティに対応した貫通穴を有
するグリーンシートを含む複数個のグリーンシートを積
層するとともに、この積層体を上下方向に圧縮してプレ
ス成形し、これを高温で焼成することによって基体及び
枠体が一体的に形成されていた。[0003] The base and frame of the electronic device described above are:
In general, it is generally formed integrally by a well-known press molding method. That is, a plurality of green sheets including a green sheet having a through hole corresponding to the cavity and a green sheet having a through hole corresponding to the cavity are laminated, and the laminated body is vertically compressed and press-formed. By firing at a high temperature, the base and the frame were integrally formed.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上述し
た従来の電子装置においては、基体及び枠体がプレス成
形法により形成されており、枠体を基体に対して一体化
するにあたりグリーンシートの積層体を上下方向に圧縮
した際、枠体の内側に位置するグリーンシートには圧力
が殆ど印加されなくなっている。それ故、枠体の直下に
印加された圧力が周囲に逃げることによって、枠体の内
側に位置するグリーンシートが盛り上がるように変形す
ることが多く、そのようにして得られた基体の上面に電
子部品素子を載置させた場合、電子部品素子の下面がキ
ャビティ底面の盛り上がりと接触してしまうため、接続
電極が設けられている電子部品素子の下面と接続パッド
が設けられている基体上面との距離にバラツキを生じ、
電子部品素子の接続電極と基体の接続パッドを導電性接
着剤により全て強固に接合することが困難になるという
欠点を有していた。However, in the above-mentioned conventional electronic device, the base and the frame are formed by a press molding method, and when the frame is integrated with the base, a laminate of green sheets is formed. When the green sheet is compressed in the vertical direction, almost no pressure is applied to the green sheet located inside the frame. Therefore, when the pressure applied immediately below the frame escapes to the surroundings, the green sheet located inside the frame is often deformed so as to be raised, and the electron beam is formed on the upper surface of the substrate obtained in this manner. When the component element is placed, the lower surface of the electronic component element comes into contact with the bulge of the bottom of the cavity, so that the lower surface of the electronic component element provided with the connection electrode and the upper surface of the base body provided with the connection pad are provided. The distance will vary,
There is a disadvantage that it is difficult to firmly join all of the connection electrodes of the electronic component element and the connection pads of the base with the conductive adhesive.
【０００５】そこで上記欠点を解消するために、電子部
品素子の直下に位置する基体の上面に凹部を形成し、電
子部品素子と基体との間の距離を広くあけておくことに
より、基体と電子部品素子との接触を有効に防止するこ
とが検討されている。Therefore, in order to solve the above-mentioned drawback, a concave portion is formed on the upper surface of the base located immediately below the electronic component element, and the distance between the electronic component element and the base is increased to thereby increase the distance between the base and the electronic component. It has been studied to effectively prevent contact with a component element.
【０００６】しかしながら、電子部品素子の直下に位置
する基体の上面に凹部を形成した場合、基体と電子部品
素子の接触は少なくなるものの、電子部品素子と基体と
の距離が広くあくことにより、電子部品素子の発する熱
が基体側に伝導されにくくなってしまう。それ故、電子
部品素子に電力増幅回路等の多量の熱を発する回路が設
けられる場合は、電子装置の使用に伴い電子部品素子の
内部で発生した熱が蓄積されて高温となることにより、
電子部品素子（電力増幅回路素子）の電気的特性が大き
く変動することとなり、その結果、電子装置の性能が不
安定になる欠点が誘発される。However, when a concave portion is formed on the upper surface of the base located immediately below the electronic component, the contact between the base and the electronic component is reduced, but the distance between the electronic component and the base is increased. The heat generated by the component element is less likely to be conducted to the base. Therefore, when a circuit that emits a large amount of heat, such as a power amplifier circuit, is provided in the electronic component element, the heat generated inside the electronic component element with the use of the electronic device is accumulated and becomes high temperature,
The electrical characteristics of the electronic component element (power amplifier circuit element) fluctuate greatly, and as a result, a disadvantage that the performance of the electronic device becomes unstable is induced.
【０００７】本発明は上記欠点に鑑み案出されたもの
で、その目的は、基体に対する電子部品素子（電力増幅
回路素子）の接合強度を向上させることができるととも
に、常に安定して動作させることが可能な高信頼性の電
子装置を提供することにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned drawbacks, and has as its object to improve the bonding strength of an electronic component element (power amplifier circuit element) to a base and to always operate it stably. It is an object of the present invention to provide a highly-reliable electronic device capable of performing the above-described steps.
【０００８】[0008]
【課題を解決するための手段】本発明の電子装置は、基
体の上面に枠体を取着させて枠体の内側にキャビティを
形成するとともに、該キャビティ内に、基体上面に設け
られた接続パッドに導電性接着剤を介して電気的に接続
される接続電極を下面に有する電力増幅回路素子を収容
し、更に前記電力増幅回路素子の直下に位置する基体上
面に凹部を設けた電子装置であって、前記枠体の上面
に、電力増幅回路素子の上面に当接される金属製の放熱
板を接合したことを特徴とするものである。According to the electronic device of the present invention, a frame is attached to an upper surface of a base to form a cavity inside the frame, and a connection provided on the upper surface of the base in the cavity. An electronic device in which a power amplification circuit element having a connection electrode electrically connected to a pad via a conductive adhesive on a lower surface is accommodated, and a recess is provided on an upper surface of a base located immediately below the power amplification circuit element. Further, a metal radiator plate which is in contact with the upper surface of the power amplifier circuit element is joined to the upper surface of the frame.
【０００９】また本発明の電子装置は、前記凹部内に樹
脂材が充填されていることを特徴とするものである。The electronic device according to the present invention is characterized in that the concave portion is filled with a resin material.
【００１０】更に本発明の電子装置は、前記凹部が電力
増幅回路素子の外周よりも外側まで延在されていること
を特徴とするものである。Further, the electronic device according to the present invention is characterized in that the recess extends outside the outer periphery of the power amplifier circuit element.
【００１１】また更に本発明の電子装置は、前記キャビ
ティの上部が前記放熱板により封止されていることを特
徴とするものである。Still further, the electronic device according to the present invention is characterized in that an upper portion of the cavity is sealed with the heat sink.
【００１２】更にまた本発明の電子装置は、前記電力増
幅回路素子の直下に位置する基体の内部に複数個のサー
マルビアホールが形成されていることを特徴とするもの
である。Still further, the electronic device according to the present invention is characterized in that a plurality of thermal via holes are formed in a base located immediately below the power amplification circuit element.
【００１３】そして本発明の電子装置は、前記枠体が前
記基体の上面にプレス成形にて一体的に形成されるとと
もに、前記凹部の内面が上記プレス成形時の圧力によっ
て圧縮変形されていることを特徴とするものである。In the electronic device according to the present invention, the frame is formed integrally with the upper surface of the base by press molding, and the inner surface of the concave portion is compressed and deformed by the pressure during the press molding. It is characterized by the following.
【００１４】本発明の電子装置によれば、枠体の上面
に、電力増幅回路素子の上面に当接される金属製の放熱
板を接合したことにより、電力増幅回路素子の発する熱
が放熱板を介して枠体及び基体に効率良く伝導されるよ
うになる。従って、電力増幅回路素子の直下に位置する
基体の上面に凹部を形成した構造のように電力増幅回路
素子と基体との距離が広くあく場合であっても、電力増
幅回路素子の温度上昇は有効に抑えられ、電力増幅回路
素子の電気的特性の変動を少なくして、電子装置の性能
を安定化させることができる。According to the electronic device of the present invention, the heat generated by the power amplifying circuit element is dissipated by connecting the metal heat radiating plate to the upper surface of the frame body to be in contact with the upper surface of the power amplifying circuit element. Through the frame and the base material efficiently. Therefore, even when the distance between the power amplifying circuit element and the base is large, such as a structure in which a recess is formed on the upper surface of the base located immediately below the power amplifying circuit element, the temperature rise of the power amplifying circuit element is effective. , The fluctuations in the electrical characteristics of the power amplifier circuit element can be reduced, and the performance of the electronic device can be stabilized.
【００１５】また本発明の電子装置によれば、凹部内に
樹脂材を充填しておくことにより、電力増幅回路素子を
樹脂材によって良好に封止することができるとともに、
電力増幅回路素子をキャビティ内の所定位置に強固に接
着・固定することができる。Further, according to the electronic device of the present invention, by filling the resin material in the concave portion, the power amplifier circuit element can be well sealed with the resin material.
The power amplifier circuit element can be firmly adhered and fixed at a predetermined position in the cavity.
【００１６】更に本発明の電子装置によれば、凹部を電
力増幅回路素子の外周よりも外側まで延在させておくこ
とにより、電力増幅回路素子を封止する樹脂の一部が凹
部の中に流れ込むことによって、電力増幅回路素子の直
下にアンダーフィル樹脂を同時に形成することができ
る。Further, according to the electronic device of the present invention, by extending the concave portion to the outside of the outer periphery of the power amplifier circuit element, a part of the resin for sealing the power amplifier circuit element is located in the concave portion. By flowing the underfill resin, the underfill resin can be simultaneously formed directly below the power amplification circuit element.
【００１７】また更に本発明の電子装置によれば、キャ
ビティの上部を放熱板により封止しておくことにより、
樹脂等を用いて電力増幅回路素子を封止する必要が無く
なり、これによって製造工程の簡略化を図ることが可能
となる。Further, according to the electronic device of the present invention, the upper portion of the cavity is sealed with a heat sink,
It is not necessary to seal the power amplification circuit element with resin or the like, thereby making it possible to simplify the manufacturing process.
【００１８】[0018]
【発明の実施の形態】以下、本発明を添付図面に基づい
て詳細に説明する。図１は本発明の一実施形態に係る電
子装置の断面図であり、同図に示す電子装置は、基体１
ａの上面に枠体１ｂを形成して枠体１ｂの内側にキャビ
ティ４を形成し、このキャビティ４内に電力増幅回路素
子２を収容させた構造を有している。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a cross-sectional view of an electronic device according to an embodiment of the present invention. The electronic device shown in FIG.
A frame 1b is formed on the upper surface of a, a cavity 4 is formed inside the frame 1b, and the power amplifier circuit element 2 is housed in the cavity 4.
【００１９】前記基体１ａの材料としては、例えば８０
０〜１２００℃の比較的低い温度で焼成が可能なガラス
−セラミック材料等が好適に用いられる。セラミック成
分としては、例えば、クリストバライト、石英、コラン
ダム（αアルミナ）、ムライト、コージェライト等の絶
縁セラミック材料、ＭｇＴｉＯ3、ＣａＴｉＯ3、ＢａＴ
ｉＯ3、ＴｉＯ2等の誘電体セラミック材料、Ｎｉ−Ｚｎ
フェライト、Ｍｎ−Ｚｎフェライト等の磁性体セラミッ
ク材料等が用いられ、平均粒径０．５〜６．０μｍ、好
ましくは０．５〜２．０μｍに粉砕したものが用いられ
る。尚、セラミック材料は２種以上を混合して用いても
よい。The material of the base 1a is, for example, 80
A glass-ceramic material that can be fired at a relatively low temperature of 0 to 1200 ° C. is preferably used. Examples of the ceramic component include insulating ceramic materials such as cristobalite, quartz, corundum (α-alumina), mullite, cordierite, MgTiO 3 , CaTiO 3 , and BaT.
iO 3, dielectric ceramic material such as TiO 2, Ni-Zn
A magnetic ceramic material such as ferrite or Mn-Zn ferrite is used, and a material pulverized to an average particle size of 0.5 to 6.0 μm, preferably 0.5 to 2.0 μm is used. Note that two or more ceramic materials may be used in combination.
【００２０】また、ガラス成分のフリットは、焼成処理
することによってコージェライト、ムライト、アノーサ
イト、セルジアン、スピネル、ガーナイト、ウイレマイ
ト、ドロマイト、ペタライトやその置換誘導体の結晶や
スピネル構造の結晶相を析出するガラスを用いるのが好
ましく、そのようなガラス材料としては、例えば、Ｂ 2
Ｏ3、ＳｉＯ2、Ａｌ2Ｏ3、ＺｎＯ、アルカリ土類酸化物
を含むガラスフリットが挙げられる。これらのガラスフ
リットは、ガラス化範囲が広く、また屈伏点が例えば６
００〜８００℃に設定されている。Further, the glass component frit is subjected to a firing treatment.
By doing cordierite, mullite, anosa
Lights, Sergeans, Spinels, Garnite, Willemae
, Dolomite, petalite and its substituted derivatives
It is preferable to use a glass that precipitates a crystal phase having a spinel structure.
More preferably, as such a glass material, for example, B Two
OThree, SiOTwo, AlTwoOThree, ZnO, alkaline earth oxide
And a glass frit containing These glassware
The lit has a wide vitrification range and a yield point of, for example, 6
It is set at 00 to 800 ° C.
【００２１】このような材質から成る基体１ａは、図１
に示すように複数個の絶縁層を積層してなる多層構造を
有しており、絶縁層の層間に介在される回路配線（図示
せず）や層間に形成されるビアホール導体（図示せず）
等によって基体１ａの内部に所定の電気回路を形成して
いる。The base 1a made of such a material is shown in FIG.
Has a multi-layer structure in which a plurality of insulating layers are stacked as shown in FIG. 1, and a circuit wiring (not shown) interposed between the insulating layers and a via-hole conductor (not shown) formed between the layers.
Thus, a predetermined electric circuit is formed inside the base 1a.
【００２２】上述した絶縁層は、各々の厚みが例えば２
０〜３００μｍに設定され、また基体１ａの内部に設け
られる回路配線やビアホール導体，後述する接続パッド
７等はＡｇ、Ａｇ−Ｐｄ、Ａｇ−Ｐｔ等のＡｇ合金を主
成分とする導電材料から成り、その厚みは例えば５〜２
５μｍに設定される。Each of the above-mentioned insulating layers has a thickness of, for example, 2
The circuit wiring and via-hole conductor provided inside the substrate 1a and the connection pad 7 described later are made of a conductive material mainly composed of an Ag alloy such as Ag, Ag-Pd, Ag-Pt. The thickness is, for example, 5 to 2
It is set to 5 μm.
【００２３】尚、前記ビアホール導体の直径は例えば５
０〜３００μｍに設定され、その材質はセラミック材料
との相性を考慮して選択される。ビアホール導体の材質
は、上述したＡｇ合金以外に、例えば、Ｃｕ系、Ｗ系、
Ｍｏ系、Ｐｄ系導電材料等が用いられ、このようなビア
ホール導体は、基体１ａの表面部に露出するように形成
しても構わない。The diameter of the via-hole conductor is, for example, 5
The thickness is set to 0 to 300 μm, and the material is selected in consideration of compatibility with the ceramic material. The material of the via hole conductor is, for example, Cu-based, W-based,
An Mo-based or Pd-based conductive material is used, and such a via-hole conductor may be formed so as to be exposed on the surface of the base 1a.
【００２４】また前記基体１ａの製作には従来周知のセ
ラミックグリーンシート積層法が用いられる。具体的に
は、まず、上述のセラミック原料粉末に適当な有機溶剤
等を添加・混合して泥漿状になすとともに、従来周知の
ドクターブレード法等を採用することによってセラミッ
クグリーンシートを得る。次に、得られたセラミックグ
リーンシートに、絶縁層の層間に介在される回路配線
（図示せず）や層間に形成されるビアホール導体を形成
し積層する。そして最後に、この積層体を高温で焼成す
ることによって基体１ａが得られる。The substrate 1a is manufactured by a conventionally known ceramic green sheet laminating method. Specifically, first, a ceramic green sheet is obtained by adding and mixing an appropriate organic solvent or the like to the above-mentioned ceramic raw material powder to form a slurry, and employing a conventionally well-known doctor blade method or the like. Next, circuit wirings (not shown) interposed between the insulating layers and via-hole conductors formed between the layers are formed and laminated on the obtained ceramic green sheets. Finally, by firing this laminate at a high temperature, the base 1a is obtained.
【００２５】更に前記基体１ａの上面に取着される枠体
１ｂは、その内側にキャビティ４を形成するためのもの
であり、先に述べた基体１ａと同じ材質で構成するのが
好ましく、その場合、焼成前の積層体にキャビティ４の
基となる穴を有したセラミックグリーンシートを積み重
ね、これらを同時焼成することで基体１ａと一体的に形
成される。Further, the frame 1b attached to the upper surface of the base 1a is for forming the cavity 4 inside thereof, and is preferably made of the same material as the base 1a described above. In this case, ceramic green sheets having holes serving as bases of the cavities 4 are stacked on the laminated body before firing, and these are simultaneously fired to be integrally formed with the base 1a.
【００２６】尚、前記枠体１ｂは単層構造でも多層構造
でも構わないが、多層構造を採用する場合、焼成前の積
層体に穴を有した多層のセラミックグリーンシートを積
み重ねて形成しても良いし、焼成前の積層体に穴を有し
たセラミックグリーンシートを一層毎積み重ねて形成し
ても良い。The frame 1b may have a single-layer structure or a multi-layer structure. If a multi-layer structure is adopted, a multi-layer ceramic green sheet having holes in a laminated body before firing may be formed. Alternatively, a ceramic green sheet having holes may be formed by stacking layers one by one on the laminate before firing.
【００２７】以上のような製法によって基体１ａ及び枠
体１ｂを形成する場合、枠体１ｂの内側に位置する基体
１ａの中央部には大きな圧縮応力が印加される。従っ
て、本実施形態においては、電力増幅回路素子２の直下
に位置する基体１ａの上面に凹部８を形成し、上述の圧
縮応力を凹部内面の変形により吸収させることによって
基体１ａと電力増幅回路品素子２との接触を有効に防止
するようにしている。これによって、基体１ａ上面に設
けられる接続パッド７の高さバラツキ、接続パッド７と
電力増幅回路素子２の下面に形成された接続電極５との
間隔バラツキを有効に防止し、接続電極５と接続パッド
７を良好な状態で接続することができる。When the base 1a and the frame 1b are formed by the above-described manufacturing method, a large compressive stress is applied to the center of the base 1a located inside the frame 1b. Therefore, in the present embodiment, the concave portion 8 is formed on the upper surface of the base 1a located immediately below the power amplifier circuit element 2, and the above-described compressive stress is absorbed by the deformation of the inner surface of the concave portion, whereby the base 1a and the power amplifier circuit product are absorbed. The contact with the element 2 is effectively prevented. As a result, variations in the height of the connection pads 7 provided on the upper surface of the base 1a and variations in the distance between the connection pads 7 and the connection electrodes 5 formed on the lower surface of the power amplifier circuit element 2 are effectively prevented, and the connection with the connection electrodes 5 is prevented. The pad 7 can be connected in a good state.
【００２８】そして、前記キャビティ４の内側に収容さ
れる電力増幅回路素子２としては、ＩＣなどの半導体素
子が用いられ、その表面にはアルミニウム（Ａｌ）など
の配線が所定パターンに形成され、例えば電気信号の増
幅に用いられるパワーアンプ用のＩＣを用いる場合は複
数のトランジスタで構成されている。As the power amplification circuit element 2 housed inside the cavity 4, a semiconductor element such as an IC is used, and wiring such as aluminum (Al) is formed in a predetermined pattern on its surface. When an IC for a power amplifier used for amplifying an electric signal is used, it is constituted by a plurality of transistors.
【００２９】前記電力増幅回路素子２の下面には複数個
の接続電極５が被着・形成されており、従来周知のフェ
イスダウンボンディング、具体的には、接続電極５を導
電性接着剤９を介して基体上面の接続パッド７に電気的
に接続させることによって基体１ａの上面に搭載され
る。このフェイスダウンボンディングに使用される導電
性接着剤９としては、半田を用いても良いし、Ａｕのス
タッドバンプを用いても良い。A plurality of connection electrodes 5 are adhered and formed on the lower surface of the power amplification circuit element 2. Conventionally known face-down bonding, specifically, using a conductive adhesive 9 It is mounted on the upper surface of the base 1a by being electrically connected to the connection pads 7 on the upper surface of the base via the same. As the conductive adhesive 9 used for this face-down bonding, solder may be used, or Au stud bumps may be used.
【００３０】また前記電力増幅回路素子２の下面にはア
ンダーフィル樹脂１１が、外周部には封止樹脂１２が被
着・形成されており、これらの樹脂１１，１２は接着性
ならびに封止性に優れたエポキシ樹脂等から成っている
ため、アンダーフィル樹脂１１で基体１ａに対する電力
増幅回路素子２の接合強度を高めることができるととも
に、電力増幅回路素子２を外気より良好に遮断すること
ができる。An underfill resin 11 is adhered and formed on the lower surface of the power amplifier circuit element 2, and a sealing resin 12 is adhered and formed on the outer peripheral portion. These resins 11 and 12 have adhesive and sealing properties. Since it is made of an epoxy resin or the like excellent in strength, the underfill resin 11 can increase the bonding strength of the power amplifier circuit element 2 to the base 1a and can shut off the power amplifier circuit element 2 better than the outside air. .
【００３１】ここで、基体１ａの上面に被着・形成され
る接続パッド７は、前述したように、Ａｇ、Ａｇ−Ｐ
ｄ、Ａｇ−Ｐｔ等のＡｇ合金を主成分とする導電材料等
から成り、導電性接着剤が接合しやすいように、メッキ
等の表面処理を施して表面に酸化膜等が形成されにくく
しておくことが好ましい。メッキ材料としてはＡｕが好
適に用いられ、その下地としてＮｉ等から成る中間メッ
キ層を介在させておいても良い。Here, the connection pads 7 attached and formed on the upper surface of the base 1a are made of Ag, Ag-P
d, made of a conductive material mainly containing an Ag alloy such as Ag-Pt, etc., and subjected to a surface treatment such as plating so that an oxide film or the like is hardly formed on the surface so that the conductive adhesive is easily bonded. Preferably. Au is preferably used as a plating material, and an intermediate plating layer made of Ni or the like may be interposed as a base thereof.
【００３２】そして、本実施形態の電子装置において重
要な点は、枠体１ｂの上面に、電力増幅回路素子２の上
面に面当接される金属製の放熱板３を接合させた点であ
る。An important point of the electronic device of the present embodiment is that a metal heat radiating plate 3 which is in surface contact with the upper surface of the power amplifier circuit element 2 is joined to the upper surface of the frame 1b. .
【００３３】前記放熱板３は、鉄、洋白、りん青銅等の
良熱伝導性の金属によって例えば１００μｍ〜３００μ
ｍの厚みに形成されており、かかる放熱板３には電力増
幅回路素子２の発する熱が良好に伝導されるようになっ
ているため、電力増幅回路素子２の直下に位置する基体
１ａの上面に凹部８を形成した構造のように電力増幅回
路素子と基体１ａとの距離が広くあく場合であっても、
電力増幅回路素子２の温度上昇が有効に抑えられ、これ
によって電力増幅回路素子２の電気的特性の変動を少な
くして、電子装置の性能を安定化させることができる。The radiating plate 3 is made of a metal having good heat conductivity such as iron, nickel silver, phosphor bronze or the like, for example, 100 μm to 300 μm.
m so that the heat generated by the power amplifier circuit element 2 is well conducted to the heat sink 3, the upper surface of the base 1 a located immediately below the power amplifier circuit element 2. Even when the distance between the power amplifying circuit element and the base 1a is wide as in the structure in which the concave portion 8 is formed in
The temperature rise of the power amplifying circuit element 2 is effectively suppressed, whereby fluctuations in the electrical characteristics of the power amplifying circuit element 2 can be reduced, and the performance of the electronic device can be stabilized.
【００３４】しかもこの場合、電力増幅回路素子２の上
面は放熱板３によって下方に付勢されているため、電力
増幅回路素子２が基体１ａの変形等に起因して若干反っ
ている場合であっても、その反りは放熱板３の押圧によ
って良好に矯正されることとなり、これによっても電力
増幅回路素子２と基体１ａとの電気的接続を良好に保つ
ことができる。Moreover, in this case, since the upper surface of the power amplifier circuit element 2 is urged downward by the heat sink 3, the power amplifier circuit element 2 is slightly warped due to deformation of the base 1a. However, the warpage is satisfactorily corrected by the pressing of the heat radiating plate 3, so that the electrical connection between the power amplification circuit element 2 and the base 1 a can be maintained well.
【００３５】また前記凹部８を、図２に示す如く電力増
幅回路素子２の外周よりも外側まで延在させておくよう
にすれば、電力増幅回路素子２を封止する樹脂の一部が
凹部８の中に流れ込むことによって、電力増幅回路素子
２の直下にアンダーフィル樹脂１１を同時に形成するこ
とができるので、樹脂を形成する工程を少なくすること
ができる。If the recess 8 is extended beyond the outer periphery of the power amplifying circuit element 2 as shown in FIG. 8, the underfill resin 11 can be formed simultaneously directly below the power amplification circuit element 2, so that the number of steps for forming the resin can be reduced.
【００３６】更に前記電力増幅回路素子２の直下に位置
する基体１ａの内部に複数個のサーマルビアホール６を
形成しておけば、電力増幅回路素子２の発する熱の一部
が凹部８内の樹脂材１１やサーマルビアホール６を介し
て外部に放散されるようになるため、電子装置の使用に
伴う電力増幅回路素子２の温度上昇をより効果的に抑え
ることができる。Further, if a plurality of thermal via holes 6 are formed in the base 1a located immediately below the power amplifying circuit element 2, a part of the heat generated by the power amplifying circuit element 2 Since the heat is radiated to the outside via the material 11 and the thermal via hole 6, the temperature rise of the power amplification circuit element 2 due to the use of the electronic device can be more effectively suppressed.
【００３７】かくして上述した電子装置は、マザーボー
ド等の外部回路基板上に搭載された上、マザーボード等
と共に電子機器の内部に組み込まれることにより電子装
置として機能することとなる。Thus, the electronic device described above functions as an electronic device by being mounted on an external circuit board such as a motherboard and incorporated in an electronic device together with the motherboard.
【００３８】尚、本発明は上述の実施形態に限定される
ものではなく、本発明の要旨を逸脱しない範囲において
種々の変更・改良等が可能である。It should be noted that the present invention is not limited to the above embodiment, and various changes and improvements can be made without departing from the gist of the present invention.
【００３９】例えば上述の実施形態において、枠体及び
基体の内部に、一端を放熱板の接合部もしくは接合部近
傍にサーマルビアホールを設けておけば、放熱板の熱が
サーマルビアホールを介して枠体及び基体に良好に伝導
することとなるため、放熱板の温度を常に低く保つこと
ができ、電力増幅回路素子から放熱板への伝熱がより効
率的なものとなる。For example, in the above-described embodiment, if a thermal via hole is provided at one end of the frame and the base at the junction of the radiator plate or near the junction, the heat of the radiator plate is transferred via the thermal via hole to the frame. In addition, since the heat is satisfactorily conducted to the base, the temperature of the heat sink can be kept low at all times, and the heat transfer from the power amplifier circuit element to the heat sink becomes more efficient.
【００４０】また上述の実施形態において、キャビティ
４の上部を放熱板３で封止するようにすれば、電力増幅
回路素子２を封止するための樹脂をキャビティ４内に別
途、形成する必要が無くなり、電子装置の製造工程を簡
略化することができる利点もある。In the above embodiment, if the upper part of the cavity 4 is sealed with the heat sink 3, it is necessary to separately form a resin for sealing the power amplifier circuit element 2 in the cavity 4. There is also an advantage that the manufacturing process of the electronic device can be simplified.
【００４１】更に上述の実施形態においては、放熱板３
を平板状になしているが、これに代えて、放熱板３の表
面に電力増幅回路素子の形状に合わせた凹凸をつけた
り、放熱性を更に高めるためのフィンを形成・取付けす
るようにしても構わない。Further, in the above embodiment, the heat sink 3
Is formed in a flat plate shape. Alternatively, the surface of the heat radiating plate 3 may be provided with concavities and convexities corresponding to the shape of the power amplifier circuit element, or fins for further improving the heat radiation may be formed and attached. I do not care.
【００４２】[0042]
【発明の効果】本発明の電子装置によれば、枠体の上面
に、電力増幅回路素子の上面に当接される金属製の放熱
板を接合したことにより、電力増幅回路素子の発する熱
が放熱板を介して枠体及び基体に効率良く伝導されるよ
うになる。従って、電力増幅回路素子の直下に位置する
基体の上面に凹部を形成した構造のように電力増幅回路
素子と基体との距離が広くあく場合であっても、電力増
幅回路素子の温度上昇は有効に抑えられ、電力増幅回路
素子の電気的特性の変動を少なくして、電子装置の性能
を安定化させることができる。According to the electronic device of the present invention, the heat generated by the power amplifying circuit element is dissipated by joining the metal radiator plate which is in contact with the upper surface of the power amplifying circuit element to the upper surface of the frame. The heat is efficiently transmitted to the frame and the base via the heat sink. Therefore, even when the distance between the power amplifying circuit element and the base is large, such as a structure in which a recess is formed on the upper surface of the base located immediately below the power amplifying circuit element, the temperature rise of the power amplifying circuit element is effective. , The fluctuations in the electrical characteristics of the power amplifier circuit element can be reduced, and the performance of the electronic device can be stabilized.
【００４３】また本発明の電子装置によれば、凹部内に
樹脂材を充填しておくことにより、電力増幅回路素子を
樹脂材によって良好に封止することができるとともに、
電力増幅回路素子をキャビティ内の所定位置に強固に接
着・固定することができる。According to the electronic device of the present invention, by filling the concave portion with the resin material, the power amplifier circuit element can be sealed well with the resin material.
The power amplifier circuit element can be firmly adhered and fixed at a predetermined position in the cavity.
【００４４】更に本発明の電子装置によれば、凹部を電
力増幅回路素子の外周よりも外側まで延在させておくこ
とにより、電力増幅回路素子を封止する樹脂の一部が凹
部の中に流れ込むことによって、電力増幅回路素子の直
下にアンダーフィル樹脂を同時に形成することができ
る。Further, according to the electronic device of the present invention, by extending the recess to the outside of the outer periphery of the power amplifier circuit element, a part of the resin for sealing the power amplifier circuit element is located in the recess. By flowing the underfill resin, the underfill resin can be simultaneously formed directly below the power amplification circuit element.
【００４５】また更に本発明の電子装置によれば、キャ
ビティの上部を放熱板により封止しておくことにより、
樹脂等を用いて電力増幅回路素子を封止する必要が無く
なり、これによって製造工程の簡略化を図ることが可能
となる。Further, according to the electronic device of the present invention, the upper portion of the cavity is sealed with a heat sink,
It is not necessary to seal the power amplification circuit element with resin or the like, thereby making it possible to simplify the manufacturing process.
【図１】本発明の一実施形態に係る電子装置の断面図で
ある。FIG. 1 is a sectional view of an electronic device according to an embodiment of the present invention.
【図２】本発明の他の実施形態に係る電子装置の上面か
らみた要部拡大図である。FIG. 2 is an enlarged view of a main part of an electronic device according to another embodiment of the present invention as viewed from above.
【図３】従来の電子装置の断面図である。FIG. 3 is a cross-sectional view of a conventional electronic device.
１ａ・・・基体 １ｂ・・・枠体 ２・・・・電力増幅回路素子 ４・・・・キャビティ ５・・・・接続電極 ６・・・・サーマルビアホール ７・・・・接続パッド ８・・・・凹部 ９・・・・導電性接着剤 １１・・・アンダーフィル樹脂 １２・・・封止樹脂 １３・・・延在部 1a: Base 1b ... frame 2. Power amplifier circuit element 4. Cavity 5 Connection electrode 6. Thermal via hole 7 Connection pad 8 ... recess 9 ... Conductive adhesive 11 ・ ・ ・ Underfill resin 12 ... sealing resin 13 ... extension part
Claims (6)
にキャビティを形成するとともに、該キャビティ内に、
基体上面に設けられた接続パッドに導電性接着剤を介し
て電気的に接続される接続電極を下面に有する電力増幅
回路素子を収容し、更に前記電力増幅回路素子の直下に
位置する基体上面に凹部を設けた電子装置であって、 前記枠体の上面に、電力増幅回路素子の上面に当接され
る金属製の放熱板を接合したことを特徴とする電子装
置。1. A frame is attached to an upper surface of a base to form a cavity inside the frame, and a cavity is formed in the cavity.
A power amplifier circuit element having a connection electrode electrically connected to a connection pad provided on the upper surface of the base via a conductive adhesive on a lower surface is housed. An electronic device having a concave portion, wherein a metal heat radiating plate that is in contact with an upper surface of a power amplifier circuit element is joined to an upper surface of the frame body.
を特徴とする請求項１に記載の電子装置。2. The electronic device according to claim 1, wherein the concave portion is filled with a resin material.
外側まで延在されていることを特徴とする請求項２に記
載の電子装置。3. The electronic device according to claim 2, wherein the recess extends to an outer side of an outer periphery of the power amplifier circuit element.
封止されていることを特徴とする請求項１乃至請求項３
のいずれかに記載の電子装置。4. An apparatus according to claim 1, wherein an upper portion of said cavity is sealed by said heat radiating plate.
An electronic device according to any one of the above.
体の内部に複数個のサーマルビアホールが形成されてい
ることを特徴とする請求項１乃至請求項４のいずれかに
記載の電子装置。5. The electronic device according to claim 1, wherein a plurality of thermal via holes are formed in a base located immediately below the power amplification circuit element.
て一体的に形成されるとともに、前記凹部の内面が上記
プレス成形時の圧力によって圧縮変形されていることを
特徴とする請求項１乃至請求項５のいずれかに記載の電
子装置。6. The frame body is formed integrally with the upper surface of the base by press molding, and the inner surface of the concave portion is compressed and deformed by the pressure at the time of the press molding. The electronic device according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002153313A JP2003347460A (en) | 2002-05-28 | 2002-05-28 | Electronic equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002153313A JP2003347460A (en) | 2002-05-28 | 2002-05-28 | Electronic equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003347460A true JP2003347460A (en) | 2003-12-05 |
Family
ID=29770374
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002153313A Pending JP2003347460A (en) | 2002-05-28 | 2002-05-28 | Electronic equipment |
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| Country | Link |
|---|---|
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006216659A (en) * | 2005-02-02 | 2006-08-17 | Mitsubishi Materials Corp | Insulating circuit substrate and power module |
| JP2006245099A (en) * | 2005-03-01 | 2006-09-14 | Mitsubishi Materials Corp | Insulating circuit board and power module |
| JP2008517459A (en) * | 2004-10-14 | 2008-05-22 | アギア システムズ インコーポレーテッド | Printed circuit board assembly with improved thermal energy dissipation |
| JP2008525121A (en) * | 2004-12-22 | 2008-07-17 | プロテウス バイオメディカル インコーポレイテッド | Implantable hermetic sealed structure |
| JP2011134956A (en) * | 2009-12-25 | 2011-07-07 | Shinko Electric Ind Co Ltd | Semiconductor device |
| US8110933B2 (en) | 2006-12-26 | 2012-02-07 | Panasonic Corporation | Semiconductor device mounted structure and semiconductor device mounted method |
| US8786049B2 (en) | 2009-07-23 | 2014-07-22 | Proteus Digital Health, Inc. | Solid-state thin-film capacitor |
| JP2021057578A (en) * | 2019-09-27 | 2021-04-08 | シーメンス アクチエンゲゼルシヤフトＳｉｅｍｅｎｓ Ａｋｔｉｅｎｇｅｓｅｌｌｓｃｈａｆｔ | Circuit board, package and method for its production |
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2002
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008517459A (en) * | 2004-10-14 | 2008-05-22 | アギア システムズ インコーポレーテッド | Printed circuit board assembly with improved thermal energy dissipation |
| JP2008525121A (en) * | 2004-12-22 | 2008-07-17 | プロテウス バイオメディカル インコーポレイテッド | Implantable hermetic sealed structure |
| JP2006216659A (en) * | 2005-02-02 | 2006-08-17 | Mitsubishi Materials Corp | Insulating circuit substrate and power module |
| JP2006245099A (en) * | 2005-03-01 | 2006-09-14 | Mitsubishi Materials Corp | Insulating circuit board and power module |
| US8110933B2 (en) | 2006-12-26 | 2012-02-07 | Panasonic Corporation | Semiconductor device mounted structure and semiconductor device mounted method |
| US8786049B2 (en) | 2009-07-23 | 2014-07-22 | Proteus Digital Health, Inc. | Solid-state thin-film capacitor |
| JP2011134956A (en) * | 2009-12-25 | 2011-07-07 | Shinko Electric Ind Co Ltd | Semiconductor device |
| US8729680B2 (en) | 2009-12-25 | 2014-05-20 | Shinko Electric Industries Co., Ltd. | Semiconductor device |
| JP2021057578A (en) * | 2019-09-27 | 2021-04-08 | シーメンス アクチエンゲゼルシヤフトＳｉｅｍｅｎｓ Ａｋｔｉｅｎｇｅｓｅｌｌｓｃｈａｆｔ | Circuit board, package and method for its production |
| US11153977B2 (en) | 2019-09-27 | 2021-10-19 | Siemens Aktiengesellschaft | Circuit carrier, package, and method for manufacturing a package |
| US11723155B2 (en) | 2019-09-27 | 2023-08-08 | Siemens Aktiengesellschaft | Circuit carrier, package, and method for manufacturing a package |
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