JP2003347200A - Substrate treatment device and substrate treatment method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To enable a substrate treatment device improved in throughput and reduced in size by enabling the periphery and identification mark region of a target substrate where a resist film has been formed to be exposed to light at the same place. <P>SOLUTION: The substrate treatment device is equipped with a chuck 80 holding a wafer W as making its front surface face upward, a motor 81 rotating the chuck 80, and an exposure means 60 irradiating the surface of the wafer W with light. The exposure means 60 is equipped with a light source 61, a first mask 67 which is formed with a slit to adjust the area of exposure light from the light source 61 and guides the light to the prescribed peripheral region of the wafer W, a second mask 69 which is formed with a slit different from the former slit to adjust the area of exposure light from the light source 61 and guides the light to the alignment mark region of the wafer W, and a mask switching/moving mechanism 72 which switches the slit of the second mask 69 to a position immediately under the light source 61 or to a standby position located off the former position as moving the second mask 69. <P>COPYRIGHT: (C)2004,JPO

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus and a substrate processing method, for example, for removing unnecessary portions of a resist film formed on a substrate to be processed such as a semiconductor wafer or an LCD substrate on which an identification mark has been given. The present invention relates to a substrate processing apparatus and a substrate processing method.

[0002]

2. Description of the Related Art Generally, in a manufacturing process of a semiconductor wafer or the like, a photolithography technique is used to form a resist pattern on the surface of a substrate to be processed (substrate to be processed) such as a semiconductor wafer or an LCD substrate. Used.
This photolithography technology includes a resist coating step of applying a resist liquid on the surface of a substrate to be processed, an exposure step of exposing a circuit pattern to a formed resist film, and a developing step of supplying a developing liquid to the exposed substrate. And a processing step. In this case, in the resist coating step, a resist liquid is supplied (dropped or discharged) to the surface of the rotating substrate to be processed, and a resist film is formed on the surface of the substrate to be processed by centrifugal force. For this reason, the thickness of the resist film in the peripheral portion of the substrate to be processed increases, and the uniformity of the film thickness on the surface of the substrate to be processed is impaired. In addition, there is a possibility that not only the transfer of the substrate to be processed may be disturbed, but also the surplus resist film in the peripheral portion may peel off during the transfer or processing of the substrate to generate particles. Further, there is a problem that the accuracy of flattening a coating film is reduced in a coating process in which a plurality of coating processes are performed. Conventionally, to solve these problems,
The periphery of the substrate to be processed after the application of the resist is exposed, and an excess resist film on the periphery of the surface of the substrate to be processed is removed by a development process.

In the process of manufacturing a semiconductor wafer or the like, the surface position of the substrate to be processed is determined so that the relative position accuracy of the next process design pattern with respect to the existing pattern on the substrate to be processed and the type or use of the substrate can be identified. Are provided with identification marks such as alignment marks. This identification mark is generally a region toward the center of the substrate to be processed, rather than a region to be exposed around the periphery of the surface of the substrate to be processed.
And the area (place) that does not touch the chip of the circuit pattern
It is provided in. However, in the above-described resist coating process, the resist liquid is also applied on the identification mark, and there is a possibility that reading of the identification mark may be hindered. Therefore, conventionally, the substrate to be processed on which the resist film is formed is conveyed to an exposure apparatus, and the area on which the identification mark is applied is subjected to exposure processing, and then development processing is performed.

[0004]

However, when the area of the identification mark is formed in the exposure apparatus, the number of steps for transporting the substrate to be processed increases, and much time is required for the processing. Therefore, the throughput decreases and the apparatus becomes large. There was a problem of becoming.

The present invention has been made in view of the above circumstances, and improves the throughput and improves the apparatus by performing peripheral exposure of a substrate on which a resist film is formed and exposure of an identification mark area at the same location. It is an object of the present invention to provide a substrate processing apparatus and a substrate processing method that can be downsized.

[0006]

In order to achieve the above object, a substrate processing apparatus according to the present invention forms a resist film by applying a resist liquid to a surface of a substrate to be processed having an identification mark on the surface. After irradiating light on the excess resist portion adhering to the peripheral portion of the substrate to be processed on which the resist film is formed,
On the premise of a substrate processing apparatus for developing the substrate to be processed, a first substrate processing apparatus of the present invention includes a holding unit for holding the surface of the substrate with the surface facing upward, and a rotating unit for rotating the holding unit. And exposure means for irradiating light to the surface of the substrate to be processed, wherein the exposure means has a light source and a slit for adjusting an exposure area from the light source, and emits light around the substrate to be processed. A first mask for guiding a predetermined area of the portion, a second mask having a slit different from the slit for adjusting an exposure area from the light source, and guiding light to an area of the identification mark of the substrate to be processed; And a mask moving mechanism for switching the slit of the second mask to a standby position just below the light source or a standby position deviated from the position directly below the light source (claim 1).

Further, a second substrate processing apparatus according to the present invention comprises:
Between the transfer means for holding and transferring the substrate to be processed on which the resist film is formed, while transferring the substrate to be processed,
Holding means for holding the surface of the substrate to be processed upward,
Rotating means for rotating the holding means, exposure means for irradiating light to the surface of the substrate to be processed, between the transport means and the exposure means, the holding means and rotating means,
A moving unit that moves to the transporting unit side or the exposing unit side, and a detecting unit that detects an eccentric amount from the center of the substrate to be processed held by the holding unit; and the exposing unit includes a light source and a light source. A first mask that has a slit for adjusting an exposure area from the light source, and guides light to a predetermined region in a peripheral portion of the substrate to be processed; and a slit different from the slit for adjusting an exposure area from the light source. And a second mask for guiding light to the area of the identification mark on the substrate to be processed, and switching a slit of the second mask to a position immediately below the light source or a standby position deviated from the position immediately below the light source. A mask moving mechanism that controls the movement,
And control means for controlling the amount of movement of the moving means, the rotational driving of the rotating means and the driving of the mask moving mechanism based on the detection signal from the detecting means and the position information of the identification mark stored in advance. It is characterized by the following (claim 2).

In the substrate processing apparatus according to the present invention, the second mask includes a mask substrate having a plurality of slits of different sizes, and a mask for moving the mask substrate so as to position any of the slits directly below the light source. A moving mechanism;
(Claim 3). Further, the second mask may have a structure including a plurality of diaphragm pieces that cooperate with each other to form a variably adjustable slit, and a diaphragm piece moving mechanism that adjusts and moves each diaphragm piece. (Claim 4).

Further, a first substrate processing method according to the present invention comprises:
The substrate processing method using the substrate processing apparatus according to claim 1, wherein the substrate on which the resist film is formed is rotated, and light is emitted from a light source to a predetermined region around the surface of the substrate via the first mask. A second exposure step of irradiating light from the light source to a region of the identification mark of the substrate to be processed through a second mask having a slit different from the slit of the first mask. An exposure step (claim 5).

[0010] A second substrate processing method of the present invention comprises:
3. A substrate processing method using the substrate processing apparatus according to claim 2, wherein the substrate to be processed on which the resist film is formed is held and transferred by a transfer unit, and transferred to the holding unit.
A step of detecting the amount of eccentricity from the center of the substrate to be processed; and moving the substrate to be processed and the holding means below the exposure means based on the information of the amount of eccentricity from the detected center. Disposing a peripheral portion at a position immediately below a light source of the exposure means; rotating the substrate to be processed; and irradiating a predetermined region around a surface of the substrate to be processed from the light source via a first mask. A first exposure step of arranging an identification mark area of the substrate to be processed at a position immediately below the light source based on information pre-stored in the control means, and different from the slit of the first mask from the light source. A second exposure step of irradiating light to a region of the identification mark of the substrate to be processed through a second mask having a slit;
Transferring the substrate to be transferred to the transfer means after the first and second exposure steps are completed (claim 6).

In the substrate processing method according to the present invention, the second exposure step is a step of irradiating light through a selected one of a plurality of slits of different sizes provided on the second mask. (Claim 7). Further, the second exposure step may be a step of irradiating light through a slit which is set by adjusting and moving a plurality of variably adjustable aperture pieces constituting the second mask. 8).

According to the first, second, fourth, and fifth aspects of the present invention, the substrate on which the resist film is formed is rotated, and a light source is provided on the peripheral portion of the surface of the substrate via the first mask. Exposure processing for irradiating a predetermined area with light {a first exposure step}, and light is applied from the light source to the area of the identification mark of the substrate to be processed through the second mask having a slit different from the slit of the first mask. The exposure processing for irradiation {the second exposure step} can be performed using the same light source, that is, the same location. Therefore, the throughput and the size of the device can be improved, and the reliability of the device can be improved.

According to the second and fifth aspects of the present invention, the amount of eccentricity from the center of the substrate to be processed is detected by the detecting means, and the amount of eccentricity is determined based on the detected information and the position information of the identification mark stored in advance. Peripheral part exposure of processing substrate {First exposure step}
And the exposure of the identification mark area (the second exposure step) can be controlled, so that the exposure processing accuracy can be improved and the reliability of the apparatus can be improved.

According to the third, fourth, seventh and eighth aspects of the present invention, the exposure of the identification mark area is performed through a selected one of a plurality of slits having different sizes provided in the second mask. Or by adjusting a variably adjustable slit provided in the second mask to perform the identification mark area exposure {second exposure step} in accordance with the size of the identification mark. it can. Therefore, it is not necessary to separately prepare a second mask having a slit corresponding to the size and type of the identification mark, and the identification mark area exposure {second exposure step} can be performed using one mask.

[0015]

Embodiments of the present invention will be described below in detail with reference to the drawings. In this embodiment, a case will be described in which the substrate processing apparatus according to the present invention is applied to a system for applying and developing a resist solution for a semiconductor wafer.

FIG. 1 is a schematic plan view of one embodiment of the above-mentioned resist liquid coating / developing processing system, FIG. 2 is a front view of FIG. 1, and FIG. 3 is a rear view of FIG.

The resist liquid coating / developing system includes a semiconductor wafer W (hereinafter referred to as a wafer W) which is a substrate to be processed.
Cassette unit 10 (transfer unit) for loading or unloading a plurality of wafer cassettes 1 from the system into or out of the system in units of, for example, 25 wafer cassettes 1, and loading / unloading wafers W into / from the wafer cassette 1.
A processing station 20 including a processing apparatus in which various single-wafer processing units for performing predetermined processing on the wafers W one by one in a coating and developing process are arranged in multiple stages at predetermined positions;
A main part is constituted by an interface unit 30 for transferring the wafer W between the processing station 20 and an exposure apparatus (not shown) provided adjacent to the processing station 20.

As shown in FIG. 1, the cassette station 10 has a plurality of, for example, up to four wafer cassettes 1 at the positions of the projections 3 on the cassette mounting table 2 with their respective wafer entrances facing the processing station 20 side. Wafer transfer mounted in a row along the horizontal X direction and movable in the wafer arrangement direction (Z direction) of wafers W accommodated in the cassette arrangement direction (X direction) and the vertical direction in the wafer cassette 1. Tweezers 4 are selectively transported to each wafer cassette 1. Further, the wafer transfer tweezers 4 is configured to be rotatable in the θ direction, and is an alignment unit (ALI) belonging to a multi-stage unit of a third set G3 on the processing station 20 side described later.
M) and the extension unit (EXT).

As shown in FIG. 1, the processing station 20 is provided with a vertical transfer type main wafer transfer mechanism (substrate transfer mechanism, substrate transfer device) 21 at the center thereof, and accommodates the main wafer transfer mechanism 21. All of the processing units are arranged in multiple stages around the chamber 22 over one or more sets. In this example, five sets G1, G2, G3, G4 and G5
The multistage units of the first and second sets G1 and G2 are arranged in parallel on the front side of the system (front side in FIG. 8), and the multistage units of the third set G3 are adjacent to the cassette station 10. The multi-stage units of the fourth set G4 are arranged adjacent to the interface unit 30, and the multi-stage units of the fifth set G5 are arranged on the back side.

In this case, as shown in FIG.
In 1, a developing unit (DEV) for developing a resist pattern by facing a wafer W and a developer supply unit (not shown) in a cup (container) 23 and a spin chuck (not shown) for transferring the wafer W to a spin chuck (not shown) A resist coating unit (COT) configured by the substrate processing apparatus according to the present invention, which performs mounting and predetermined processing, is stacked in two stages from the bottom in the vertical direction. Similarly, in the second set G2, two resist coating units (COT) and developing units (DEV) are stacked in two stages from the bottom in the vertical direction. The reason for disposing the resist coating unit (COT) on the lower side is that the drainage of the resist solution is troublesome both mechanically and in terms of maintenance. However, if necessary, a resist coating unit (COT) can be arranged in the upper stage.

As shown in FIG. 3, in the third set G3, an oven type processing unit for mounting the wafer W on the wafer mounting table 24 and performing a predetermined process, for example, a cooling unit (COL) for cooling the wafer W , An adhesion unit (AD) for performing hydrophobic treatment on the wafer W, an alignment unit (ALIM) for positioning the wafer W, and an extension unit (EX) for loading and unloading the wafer W
T), four hot plate units (HP) for baking the wafer W are stacked, for example, in eight stages from the bottom in the vertical direction. Similarly, the fourth set G4 includes an oven type processing unit such as a cooling unit (COL), an extension cooling unit (EXTCOL), an extension unit (EXT), a cooling unit (COL), and two chilling hot plate units having a quenching function. (CHP) and two hot plate units (HP) are stacked in, for example, eight stages from the bottom in the vertical direction.

As described above, a cooling unit (COL) and an extension cooling unit (EXTCOL) having a low processing temperature are arranged in a lower stage, and a hot plate unit (HP), a chilling hot plate unit (CHP) having a high processing temperature and an add By arranging the fusion unit (AD) in the upper stage, thermal mutual interference between the units can be reduced. Of course, a random multi-stage arrangement is also possible.

As shown in FIG. 1, in the processing station 20, the third and fourth sets G3 and G4 adjacent to the multi-stage units (spinner type processing units) of the first and second sets G1 and G2 are provided. Ducts 25 and 26 are provided in the side wall of the multi-stage unit (oven processing unit) so as to extend vertically. These ducts 2
5 and 26 are supplied with down-flow clean air or specially temperature-controlled air. By this duct structure, the heat generated in the oven-type processing units of the third and fourth sets G3 and G4 is cut off, and does not reach the spinner-type processing units of the first and second sets G1 and G2. ing.

In this processing system, a multi-stage unit of a fifth set G5 can be arranged on the back side of the main wafer transfer mechanism 21 as shown by a dotted line in FIG.
The multi-stage units of the fifth group G5 can be moved sideways as viewed from the main wafer transfer mechanism 21 along the guide rails 27. Therefore, even when the multi-stage unit of the fifth set G5 is provided, a space is secured by sliding the unit, so that the main wafer transfer mechanism 21 is provided.
Maintenance work can be easily performed from behind.

Although the interface section 30 has the same dimensions as the processing station 20 in the depth direction,
It is made small in the width direction. A portable pickup cassette 31 and a stationary buffer cassette 32 are arranged in two stages at the front part of the interface part 30, and the exposure of the peripheral part of the wafer W and the exposure of the identification mark area are made at the rear part. Peripheral exposure device 3 as exposure means
3, a wafer transfer arm 34 serving as a transfer means is provided at the center. This transfer arm 34
Is configured to move in the X and Z directions and to be conveyed to both cassettes 31 and 32 and the peripheral exposure device 33. The transfer arm 34 is configured to be rotatable in the θ direction,
It is configured such that it can be transferred to an extension unit (EXT) belonging to the multistage unit of the fourth set G4 on the processing station 20 side and a wafer transfer table (not shown) on the adjacent exposure apparatus side.

The processing system configured as described above includes:
Although it is installed in the clean room 40, the cleanliness of each part is further increased in the system by the efficient vertical laminar flow system.

As shown in FIGS. 4 and 5, the peripheral exposure apparatus 33 has a housing 50 that forms an exposure processing chamber 52 having a wafer W loading / unloading port 51 at one end.
Exposure means 60 is mounted on the upper end on the other end side of the housing 50. Further, in the housing 50, holding means for holding the wafer W so that the surface thereof is directed upward, for example, a chuck 80 for holding the wafer W by vacuum suction, and a chuck 80 for holding the wafer W
A motor 81 as a rotating means for rotating the chuck, a moving means 90 for moving the chuck 80 and the motor 81 to the wafer transfer arm 34 side, ie, the wafer loading / unloading port 51 side or the exposure means 60 side, and the chuck 80 Detecting means for detecting the amount of eccentricity from the center of the wafer W, such as a CCD
A position detector 100 having a camera, and a buffer 85 serving as a transfer means for transferring the wafer W between the transfer arm 34 and the chuck 80 inserted into the housing 50 via the wafer transfer / in / out port 51. Is provided.

As shown in FIGS. 6 to 9, the exposure means 60 includes a light source 61 formed of, for example, an ultra-high pressure mercury lamp, and a condenser mirror 62 for condensing light from the light source 61.
A light source box 63 accommodating a light source 61 and a condenser mirror 62; and a light source 6 provided below the light source box 63.
A first rod having a rod 65 for guiding light from 1 to the lower optical system (lens group) 64 and a rectangular slit 66 disposed near the lower end opening of the rod 65 for adjusting an exposure area. , A cylindrical cover body 65b for accommodating the rod 65 and the optical system (lens group) 64, and the rod 65 and the optical system via a notch 65a provided on the side of the cylindrical cover body 65b. (Lens group) A rectangular slit 6 selectively incorporated with the lens 64 for adjusting an exposure area.
6, a second mask 69 having a circular slit 68 of a smaller diameter than the slit 66, for example, and a standby position in which the circular slit 68 of the second mask 69 is displaced from a position directly below the light source 61 or from a position directly below the light source 61. A mask switching motor 70, which is a mask moving mechanism that controls switching to a position, is provided.

In this case, the size of the rectangular slit 66 provided in the first mask 67 is, for example, 4 mm × 5 mm.
Alternatively, it is set to 4 mm × 10 mm. The diameter of the circular slit 68 of the second mask 69 is in the range of the alignment mark M formed on the wafer W, for example, 50 to 250 μm.
The dimension is set to cover m. Note that the slit 68 provided in the second mask 69 does not necessarily have to be circular, and the light B
For example, an elliptical shape, a triangular shape, a rectangular shape, or the like may be used as long as it has a size capable of guiding the following.

When the second mask 69 is in the standby position in the exposure means 60 having the above structure, the light B from the light source 61 is applied to the first mask 6 as shown in FIG.
The wafer W is guided by a rectangular slit 66 provided on the wafer 7 and is uniformly irradiated on a predetermined area around the surface of the wafer W. In this state, by rotating the wafer W by the motor 81, the excess resist film (part) RA in the peripheral portion of the surface of the wafer W is irradiated with light B, that is, exposed (peripheral exposure) {first exposure step}. it can.

Further, the second mask 69 is attached to the cylindrical cover 6.
In a state in which the circular slit 68 is inserted into the notch 65a provided in the hole 5b, that is, the circular slit 68 is located immediately below the light source 61, as shown in FIG.
The exposure (alignment mark exposure) (the second exposure step) can be performed by irradiating the resist film R in the region of the alignment mark M formed on the surface of the wafer W and guided by the circular slit 68 provided in the wafer 9.

The moving means 90 is, as shown in FIGS. 4 and 5, a mounting table 9 on which the chuck 80 and the motor 81 are mounted.
1 and a ball screw mechanism 92 for moving the mounting table 91 to the wafer transfer arm 34 side, that is, to the wafer loading / unloading port 51 side or the exposure means 60 side. In this case, the ball screw mechanism 92 includes a screw shaft 93 that movably engages (screw-fits) the mounting table 91 in the axial direction, and a movement motor 94 that rotates the screw shaft 93 forward and reverse. Further, a pair of guide shafts 95 are provided in parallel with the screw shaft 93 and slidably support the mounting table 91.
In the moving means 90 configured as described above, the chuck motor 80 and the motor 81 are driven by rotating the moving motor 94 in the forward and reverse directions so that the wafer transfer arm 34 side, ie, the wafer loading / unloading port 51 side, or the exposure means 60 Moved to the side.

Here, the case where the moving means 90 is constituted by the ball screw mechanism 92 has been described, but the moving means 90 does not necessarily have to be constituted by the ball screw mechanism 92. For example, a cylinder mechanism or a belt mechanism may be used. May be configured.

The buffer 85 includes, as shown in FIG.
A support plate 86 having an arc-shaped notch 86a surrounding the outside of the chuck 80 in a plan view, a support pin 87 standing at three positions near the arc-shaped notch 86a side of the support plate 86, and a support plate 86 And a lifting mechanism, for example, an air cylinder 88 for lifting. The buffer 85 thus configured is lifted above the chuck 80 by the driving of the air cylinder 88, and the wafer W held by the transfer arm 34 is
Is received by the support pins 87 and then descends below the chuck 80 to transfer the wafer W to the chuck 80. Conversely, by rising from a position below the chuck 80, the support pins 87 receive the wafer W held by the chuck 80 from the chuck.
The wafer W is transferred to the transfer arm 34 located below the wafer W by entering the third housing 50.

The motor 81 and the mask switching motor 7
The movement motor 94, the lifting air cylinder 88, and the position detector 100 are each electrically connected to a control means, for example, a central processing unit 200 (hereinafter, referred to as CPU 200), and information stored in the CPU 200 in advance. For example, based on information such as the distance from the edge of the wafer W to the chip of the circuit pattern, the position and dimensions of an alignment (not shown), or based on a detection signal from the position detector 100, the motor 81 and the mask are used. Switching motor 7
0, the movement motor 94 and the lifting / lowering air cylinder 88 are operated.

Next, the operation of the above-described resist liquid coating / developing processing system will be described. First, in the cassette station 10, the wafer transfer tweezers 4 accesses the cassette 1 containing unprocessed wafers W on the cassette mounting table 2 and takes out one wafer W from the cassette 1. When the wafer W is taken out of the cassette 1, the wafer transfer tweezers 4 moves to the alignment unit (ALIM) disposed in the multi-stage unit of the third set G <b> 3 on the processing station 20 side. The wafer W is placed on the wafer mounting table 24. The wafer W undergoes orientation flat alignment and centering on the wafer mounting table 24. Then, the main wafer transfer mechanism 2
1 accesses the alignment unit (ALIM) from the opposite side and receives the wafer W from the wafer mounting table 24.

In the processing station 20, the main wafer transfer mechanism 21 first loads the wafer W into an adhesion unit (AD) belonging to the multistage unit of the third group G3. In this adhesion unit (AD), the wafer W undergoes a hydrophobic treatment. When the hydrophobizing process is completed, the main wafer transfer mechanism 21 unloads the wafer W from the adhesion unit (AD), and then moves the third set G3 or the fourth set G3.
Is carried into a cooling unit (COL) belonging to the multistage unit of the set G4. This cooling unit (CO
In L), the wafer W is cooled to a set temperature before the resist coating process, for example, 23 ° C. When the cooling process is completed, the main wafer transfer mechanism 21 unloads the wafer W from the cooling unit (COL), and then moves the resist coating unit (C) belonging to the multistage unit of the first set G1 or the second set G2.
OT). This resist coating unit (CO
In T), the wafer W is coated with a resist having a uniform thickness on the wafer surface by spin coating.

When the resist coating process is completed, the main wafer transfer mechanism 21 transfers the wafer W to the resist coating unit (C).
OT), then hot plate unit (H
P). The wafer W is mounted on the mounting table in the hot plate unit (HP), and is set at a predetermined temperature, for example, 10 ° C.
Prebake treatment is performed at 0 ° C. for a predetermined time. by this,
The residual solvent can be removed from the coating film on the wafer W by evaporation. When the pre-bake is completed, the main wafer transfer mechanism 2
1 unloads the wafer W from the hot plate unit (HP), and then transfers it to the extension cooling unit (EXTCOL) belonging to the multi-stage unit of the fourth set G4. In this unit (EXTCOL), the wafer W
Is cooled to the next step, that is, to a temperature suitable for peripheral exposure processing in the peripheral exposure device 33, for example, 24 ° C. After this cooling, the main wafer transfer mechanism 21 transfers the wafer W to the extension unit (EXT) immediately above, and places the wafer W on a mounting table (not shown) in this unit (EXT). When the wafer W is mounted on the mounting table of the extension unit (EXT), the transfer arm 34 of the interface unit 30 accesses from the opposite side, and
The wafer W is received. Then, the transfer arm 34 carries the wafer W into the peripheral exposure device 33 in the interface unit 30. That is, the wafer W held by the transfer arm 34 is loaded into the housing 50 of the peripheral exposure device 33,
It is delivered to the raised support pin 87 of the buffer 85. Next, the support plate 86 of the buffer 85 is lowered, and the wafer W supported by the support pins 87 is held by the chuck 80. Then, the moving motor 94 of the moving means 90 is driven, and the wafer W is
Moved to the side. At this time, the notch (not shown) provided at the edge of the wafer W is detected by the laser beam emitted from the position detector 100 by rotating the motor 81 at a low speed, and the wafer held by the chuck 80 is detected. The amount of eccentricity from the center of W is detected, and a detection signal is transmitted to CPU 200. Based on this, a control signal from the CPU 200 is transmitted to the moving motor 94, and the position of the peripheral portion of the wafer W held by the chuck 80 on the exposure unit 60 side is set.

When the wafer W is moved to a position below the exposure means 60, that is, a position immediately below the light source 61 and the rod 65 of the exposure means 60, the exposure means 60 is operated, and as shown in FIG. B is guided by a rectangular slit 66 provided in the first mask 67 and is uniformly applied to a predetermined region in the peripheral portion of the surface of the wafer W. In this state, the wafer W is rotated by the motor 81,
Excess resist film (part) RA in the peripheral part of the surface is irradiated with light B to perform exposure (peripheral exposure) {first exposure step}.

After the peripheral exposure is completed, the moving motor 94 is driven based on a control signal from the CPU 200, and the area of the alignment mark M formed (formed) on the wafer W is While moving to the position directly below, the switching motor 70 is driven to insert the second mask 69 into the notch 65a provided in the cylindrical cover 65b, that is, to place the circular slit 68 directly below the light source 61. Specifically, a circular slit 68 is provided between the rod 65 and the optical system (lens group) 64. In this state, the exposure means 60 is operated, and as shown in FIG. 9, the light B from the light source 61 is applied to the circular slit 6 provided in the second mask 69.
The exposure (alignment mark exposure) {second exposure step} is performed by irradiating the resist film R in the region of the alignment mark M formed on the surface of the wafer W, guided by the wafer 8. Note that the alignment mark exposure {the second exposure step} does not need to be performed every time, and is set depending on the state of the resist film applied to the wafer W, for example, whether the resist film has one or two layers.

After the peripheral exposure and the alignment mark exposure have been performed as described above, the moving motor 94 is driven to rotate in the reverse direction to transfer the wafer W together with the chuck 80 into and out of the peripheral exposure device 33. Move to 51 side. next,
The lifting / lowering air cylinder 88 drives to raise the support plate 86, receives the wafer W on the chuck 80 by the support pin 87, and moves the wafer W to a position above the chuck. Next, the transfer arm 34 enters below the wafer W in the housing 50 of the peripheral exposure device 33, and in this state, the support plate 86 is lowered, and the wafer W is transferred to the transfer arm 34. Thereafter, the transfer arm 34 retreats from the peripheral exposure device 33, unloads the wafer W, and transfers the wafer W to a wafer receiving table (not shown) on the adjacent exposure device side. In this case, the wafer W is transferred to the buffer cassette 32 before being transferred to the exposure apparatus.
Sometimes stored temporarily.

When the wafer W is returned to the wafer receiving table on the side of the exposure device after the entire surface exposure by the exposure device is completed,
The transfer arm 34 of the face unit 30 accesses the wafer receiving table to receive the wafer W, and carries the received wafer W to an extension unit (EXT) belonging to the multistage unit of the fourth set G4 on the processing station 20 side. Place on a wafer receiving table. Also in this case, the wafer W may be temporarily stored in the buffer cassette 32 in the interface unit 30 before being transferred to the processing station 20 side.

The wafer W placed on the wafer receiving table
Is transferred to the chilling hot plate unit (CHP) by the main wafer transfer mechanism 21 to prevent fringe from being generated, or a chemically amplified resist (CAR)
Is subjected to a post-exposure bake treatment to induce an acid-catalyzed reaction in the above.

Thereafter, the wafer W is loaded with the developing unit (DE) belonging to the multistage unit of the first set G1 or the second set G2.
V). In the developing unit (DEV), the developing solution is supplied evenly to the resist on the surface of the wafer W to perform the developing process. By this development process, the resist film formed on the surface of the wafer W is developed into a predetermined circuit pattern, the excess resist film on the peripheral portion of the wafer W is removed, and further, the resist film formed on the surface of the wafer W is formed. (7) The resist film attached to the region of the alignment mark M is removed. Thus, when development is completed,
The rinsing liquid is applied to the surface of the wafer W, and the developing liquid is washed away.

When the developing process is completed, the main wafer transfer mechanism 21 unloads the wafer W from the developing unit (DEV), and then transfers the wafer W to the hot plate unit belonging to the third unit G3 or the fourth unit G4 of the multistage unit. (HP).
In this unit (HP), the wafer W is post-baked at a temperature of, for example, 100 ° C. for a predetermined time. Thereby, the resist swollen by the development is hardened, and the chemical resistance is improved.

When the post-baking is completed, the main wafer transfer mechanism 21 transfers the wafer W to the hot plate unit (H).
P), and then carried into one of the cooling units (COL). Here, after the temperature of the wafer W has returned to room temperature, the main wafer transfer mechanism 21 transfers the wafer W to an extension unit (EXT) belonging to the third group G3. When a wafer W is mounted on a mounting table (not shown) of the extension unit (EXT), the wafer transfer tweezers 4 of the cassette station 10 accesses the opposite side to receive the wafer W. And
The wafer transfer tweezers 4 puts the received wafer W into a predetermined wafer storage groove of the processed wafer storage cassette 1 on the cassette mounting table, and the processing is completed.

In the above embodiment, the second mask 6
Although the case where one slit, for example, a circular slit 68 is formed in 9 has been described, the second mask 69 may have the following structure. For example, as shown in FIG. 10, a second mask 69A is formed by forming a plurality of, for example, five circular slits 68a, 68b, 68c, 68 of different sizes.
d, 68e (68a>68b>68c>68d> 68
e) The mask substrate 71 having a substantially donut shape in plan view having e)
And circular slits 68a, 68b, 68c, 68d, 6
A mask switching movement mechanism 72 that moves the mask substrate 71 so that an arbitrary slit 8e is located immediately below the light source 61 may be used. In this case, the mask switching movement mechanism 72
Is composed of a mask switching motor 70A formed by a stepping motor, and a connecting member 73 for connecting a drive shaft 70a of the mask switching motor 70A and one end of the mask substrate 71.

The second mask 69A thus configured
According to the method, the circular slit 68a, 68b, 68c, 68d, 68e has a predetermined size among the circular slits 68a, 68b, 68c, 68d, 68e based on information such as the size and shape of the alignment mark M stored in the CPU 200 in advance. It can be located directly below the 60 light sources 61. Therefore, it is not necessary to separately prepare a second mask 69 having a slit corresponding to the size and type of the alignment mark M, and the exposure of the alignment mark area is performed by one second mask 69A {the second exposure step}.
It can be performed. The circular slits 68a, 68
The numbers b, 68c, 68d, and 68e do not necessarily need to be five, and may be an arbitrary number corresponding to the type of the alignment mark M. Also, the circular slits 68a, 68
Instead of b, 68c, 68d, and 68e, slits other than a circle, such as an ellipse, a triangle, or a rectangle, having different shapes and sizes may be used.

As another form of the second mask, as shown in FIG. 11, a plurality of (for example, 12) second masks 69B are formed by cooperating with each other to form variably adjustable slits 68B. The diaphragm piece 74 and a diaphragm piece moving mechanism 75 that adjusts and moves each diaphragm piece 74 can also be configured. In this case, the diaphragm moving mechanism 75 mounts the drive tooth portion 76 on the drive shaft 70a of the switching motor 70B that can rotate forward and reverse,
The drive tooth portion 76 has a structure in which a driven tooth portion 78 provided on the outer periphery of an operation ring 77 in which the outer side of each of the aperture pieces 74 is fixed to the inner periphery.

The second mask 69B thus configured
According to the method described above, the switching motor 70B is rotated by a predetermined angle based on information such as the size and shape of the alignment mark M stored in the CPU 200 in advance, so that each aperture piece 7
4 cooperate to form a slit 68B of a predetermined size. The position of the alignment mark M is determined by the CPU.
The circuit pattern information is obtained from a reference position of the notch position of the wafer W by receiving circuit pattern information from a host computer of 200, for example, a host computer through a network. Therefore, there is no need to separately prepare second masks 69 having slits corresponding to the size and type of the alignment mark M, and the exposure of the alignment mark area is performed by one second mask 69B {the second exposure step}.
It can be performed.

In the above embodiment, the peripheral exposure device 3
In FIG. 3, the case where the alignment mark exposure {the second exposure step} is performed after the peripheral exposure of the wafer W (the first exposure step) is performed, but may be reversed.
That is, alignment mark exposure {second exposure step}
, The peripheral exposure {first exposure step} may be performed.

Further, in the above embodiment, the case where the substrate to be processed is the semiconductor wafer W has been described. However, the substrate processing apparatus and the substrate processing method of the present invention can be applied to an LCD substrate or a photomask substrate other than the wafer W. Can be similarly applied.

[0053]

As described above, according to the substrate processing apparatus and the substrate processing method of the present invention, the following effects can be obtained.

1) According to the first, second, fourth, and fifth aspects of the present invention, the substrate on which the resist film is formed is rotated, and the surface of the substrate is processed from the light source via the first mask. Exposure process for irradiating a predetermined region of the portion with light {a first exposure process} and a second mask having a slit different from the slit of the first mask from the light source to the region of the identification mark of the substrate to be processed. The exposure process of irradiating light {the second exposure process} can be performed using the same light source, that is, the same location. Therefore, the throughput and the size of the device can be improved, and the reliability of the device can be improved.

2) According to the second and fifth aspects of the present invention, the amount of eccentricity from the center of the substrate to be processed is detected by the detecting means, and based on the detected information and the position information of the identification mark stored in advance. Therefore, it is possible to control the peripheral exposure of the substrate to be processed {the first exposure step} and the exposure of the identification mark area {the second exposure step}, so that the exposure processing accuracy can be improved, and The reliability of the device can be improved.

3) According to the third, fourth, seventh and eighth aspects of the present invention, the identification mark area is formed via a selected one of a plurality of slits having different sizes provided on the second mask. The identification mark area exposure {second exposure step} is performed in accordance with the size of the identification mark by performing exposure or adjusting a variably adjustable slit provided in the second mask. be able to. Therefore, it is not necessary to separately prepare a second mask having a slit corresponding to the size and type of the identification mark, and the identification mark area exposure {second exposure step} can be performed using one mask.

[Brief description of the drawings]

FIG. 1 is a schematic plan view showing an example of a resist liquid application / development processing system to which a substrate processing apparatus according to the present invention is applied.

FIG. 2 is a schematic front view of the resist liquid application / development processing system.

FIG. 3 is a schematic rear view of the resist liquid application / development processing system.

FIG. 4 is a cross-sectional view showing an exposure unit in the present invention.

FIG. 5 is a vertical sectional view of the exposure means.

FIGS. 6A and 6B are schematic sectional views showing a peripheral exposure {first exposure step} by the above-described exposure means, and a sectional view taken along line II of FIG.

FIGS. 7A and 7B are schematic perspective views showing a peripheral exposure {first exposure step} by the exposure means, and an enlarged sectional view taken along line II-II of FIG.

FIGS. 8A and 8B are schematic sectional views showing alignment mark exposure {second exposure step} by the exposure unit.
FIG. 3B is a sectional view taken along line III-III of FIG.

FIGS. 9A and 9B are schematic perspective views showing alignment mark exposure {second exposure step} by the exposure unit. FIGS.
FIG. 4B is an enlarged sectional view taken along line IV-IV of FIG.

FIG. 10 is a schematic perspective view showing a second embodiment of the second mask according to the present invention.

FIG. 11 is a schematic perspective view showing a third embodiment of the second mask according to the present invention.

[Explanation of symbols]

33 Peripheral exposure device 34 Transport arm (transport means) 51 Loading / unloading port 60 Exposure means 61 Light source 66 Rectangular slit 67 First mask 68, 68a, 68b, 68c, 68d, 68e Circular slit 68B Slit 69, 69A, 69B Second mask 70, 70A, 70B Mask switching motor 71 Mask substrate 72 Mask switching moving mechanism 74 Aperture piece 75 Aperture piece moving mechanism 80 Chuck (holding means) 81 Motor (rotating means) 85 Buffer (transfer means) 90 Moving means 91 mounting table 92 ball screw mechanism 100 position detector (detection means) 200 CPU (control means) W semiconductor wafer (substrate to be processed) B light M alignment mark R resist film RA surplus resist film (part)

   ────────────────────────────────────────────────── ─── Continuation of front page    (72) Inventor Ichiro Shimomura             5-3-6 Akasaka, Minato-ku, Tokyo TBS broadcast             Center Tokyo Electron Limited (72) Inventor Junji Harada             5-3-6 Akasaka, Minato-ku, Tokyo TBS broadcast             Center Tokyo Electron Limited F term (reference) 5F031 CA02 CA07 FA01 FA07 FA12                       GA02 HA57 HA59 JA04 JA28                       JA29 JA32 JA38 KA06 MA27                       MA30 PA02 PA04 PA30                 5F046 BA07 CB05 CB20 CC06 DA07                       FC02 JA01 JA04 JA22

Claims (8)

[Claims] 1. A resist film is formed by applying a resist liquid on a surface of a substrate to be processed having an identification mark on its surface, and an excess resist portion adhering to a peripheral portion of the substrate on which the resist film has been formed. A substrate processing apparatus for developing the substrate to be processed after irradiating the substrate with light; holding means for holding the surface of the substrate with the surface facing upward; rotating means for rotating the holding means; An exposure means for irradiating the surface of the substrate with light, the exposure means having a light source and a slit for adjusting an exposure area from the light source, and guiding the light to a predetermined region in a peripheral portion of the substrate to be processed. A second mask having a slit different from the slit for adjusting an exposure area from the light source and guiding light to an area of an identification mark of the substrate to be processed; The substrate processing apparatus according to claim the risk of slits be provided with a, a mask moving mechanism for governing the switching movement to a position just below or standby position deviated from the position directly below the light source of the light source. 2. A resist film is formed by applying a resist liquid on a surface of a substrate to be processed having an identification mark on its surface, and an excess resist portion adhering to a peripheral portion of the substrate on which the resist film has been formed. After irradiating the substrate with the light, the substrate processing apparatus develops the substrate to be processed. In the substrate processing apparatus, the substrate to be processed is transferred to and from a transport unit that holds and transports the substrate to be processed on which the resist film is formed. ,
Holding means for holding the surface of a substrate to be processed upward, rotating means for rotating the holding means, exposure means for irradiating light to the surface of the substrate to be processed, and between the transport means and the exposure means Moving means for moving the holding means and the rotating means to the conveying means side or the exposing means side; and detecting means for detecting the amount of eccentricity of the substrate to be processed held by the holding means from the center. The exposure means has a light source, a slit for adjusting an exposure area from the light source, a first mask for guiding light to a predetermined region in a peripheral portion of the substrate, and an exposure from the light source. A second mask that has a slit different from the slit for adjusting the area and guides light to the area of the identification mark on the substrate to be processed; And a mask moving mechanism for performing a switching movement to a standby position deviating from a position immediately below the mask, and moving the moving means based on a detection signal from the detecting means and position information of the identification mark stored in advance. A substrate processing apparatus, comprising: a control unit for controlling the amount, rotation drive of the rotation unit, and drive of the mask moving mechanism. 3. The substrate processing apparatus according to claim 1, wherein the second mask has a mask substrate having a plurality of slits of different sizes, and the second mask is arranged so that any of the slits is located at a position immediately below a light source. A substrate processing apparatus, comprising: a mask moving mechanism that moves a mask substrate. 4. The substrate processing apparatus according to claim 1, wherein the second mask cooperates with one another to form a slit that can be variably adjusted, and adjusts and moves each of the throttle pieces. A substrate processing apparatus, comprising: a diaphragm moving mechanism. 5. A substrate processing method using the substrate processing apparatus according to claim 1, wherein the substrate on which the resist film is formed is rotated, and a peripheral portion of the surface of the substrate is processed from a light source via a first mask. A first exposure step of irradiating light to a predetermined area of the substrate, and light from the light source to the area of the identification mark of the substrate to be processed through a second mask having a slit different from the slit of the first mask. A second exposure step of irradiating;
A substrate processing method comprising: 6. A substrate processing method using a substrate processing apparatus according to claim 2, wherein the substrate to be processed on which the resist film is formed is held by a transfer unit, transferred, and transferred to the holding unit. A step of detecting the amount of eccentricity from the center of the substrate to be processed, and moving the substrate to be processed and the holding means below the exposure means based on information of the amount of eccentricity from the detected center, and Disposing the unit at a position immediately below the light source of the exposure unit; rotating the substrate to be processed;
A first exposure step of irradiating a predetermined area around the surface of the substrate through a mask with light, and an identification mark area of the substrate to be processed by the light source based on information stored in advance in control means. A second exposure step of irradiating light to a region of the identification mark of the substrate to be processed from a light source through a second mask having a slit different from the slit of the first mask, and Transferring the substrate to be transferred to the transfer unit after the first and second exposure steps are completed. 7. The substrate processing method according to claim 5, wherein the second exposing step is performed through a slit selected from a plurality of slits having different sizes provided in the second mask. A substrate processing method comprising irradiating light. 8. The substrate processing method according to claim 5, wherein, in the second exposure step, a slit set by adjusting and moving a plurality of variably adjustable aperture pieces constituting a second mask is provided. Irradiating light through the substrate.