JP2003347185A - Exposure method, exposure device, and method of manufacturing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an exposure device which is capable of detecting positions of a plurality of pattern forming regions set up on the surface of a substrate, carrying out an alignment process with high accuracy, and performing an exposure process accurately for the pattern forming regions. <P>SOLUTION: An exposure device EX is equipped with a plurality of laser interferometers Py1 to Py3 capable of detecting the position of the substrate P in the direction of a Y axis, an alignment system AL which aligns the photosensitive substrate P with a mask M, and a control device CONT which switches laser interferometers Py1 to Py3 from one to the other corresponding to the position of the photosensitive substrate, selects one of the laser interferometers Py1 to Py3 corresponding to the pattern forming regions PA1 to PA9 set up on the substrate P to be exposed, enables the alignment system AL to align the substrate P with the mask M on the basis of position information detected by the laser interferometers Py1 to Py3, and carries out an exposure process. <P>COPYRIGHT: (C)2004,JPO

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure method, an exposure apparatus, and a device manufacturing method for exposing a pattern of a mask on a substrate by synchronously moving a mask and a substrate.

[0002]

2. Description of the Related Art Liquid crystal display devices and semiconductor devices are:
It is manufactured by a so-called photolithography technique in which a pattern formed on a mask is transferred onto a photosensitive substrate. The exposure apparatus used in this photolithography process has a substrate stage on which a photosensitive substrate is mounted and moves two-dimensionally and a mask stage on which a mask having a pattern is mounted and moves two-dimensionally, and is formed on a mask. The transferred pattern is transferred to the photosensitive substrate via the projection optical system while sequentially moving the mask stage and the substrate stage. The exposure device includes a batch exposure device that simultaneously transfers the entire mask pattern onto the photosensitive substrate, and a scanning exposure device that continuously transfers the mask pattern onto the photosensitive substrate while synchronously scanning the mask stage and the substrate stage. Two types of devices are mainly known. Among them, when manufacturing a liquid crystal display device, a scanning exposure apparatus is mainly used due to a demand for a large display area.

In a scanning exposure apparatus, a plurality of projection optical systems are arranged such that adjacent projection areas are displaced by a predetermined amount in the scanning direction, and ends (joints) of adjacent projection areas are orthogonal to the scanning direction. There is a so-called multi-lens type scanning exposure apparatus (multi-lens scanning exposure apparatus) which is arranged so as to overlap in the direction in which the scanning is performed. The multi-lens scanning exposure apparatus can obtain a large exposure area (pattern forming area) without increasing the size of the apparatus while maintaining good imaging characteristics. The field stop of each projection optical system in the scanning type exposure apparatus has, for example, a trapezoidal shape, and is set so that the total aperture width of the field stop in the scanning direction is always equal. Therefore, since the joints of the adjacent projection optical systems are exposed in an overlapping manner, the scanning type exposure apparatus has an advantage that the optical aberration and the exposure illuminance of the projection optical system change smoothly.

FIG. 19 is a view showing an example of a conventional multi-lens scan type exposure apparatus. As shown in FIG.
The exposure apparatus EXJ includes a mask stage MST supporting a mask M and a substrate stage PST supporting a photosensitive substrate P.
An illumination optical system IL for illuminating the mask M supported by the mask stage MST with the exposure light EL, and an image of the pattern of the mask M illuminated by the exposure light EL on the substrate stage PS
A plurality of projection optical systems PLa to PLg for projecting on the photosensitive substrate P supported by T are provided. Projection optical system PL
a, PLc, PLd, PLg and projection optical systems PLb, PL
The d and PLf are arranged in two rows in a staggered manner, and adjacent projection optical systems among the projection optical systems PLa to PLg (for example, the projection optical systems PLa and PLb, PLb and PLc).
Are displaced by a predetermined amount in the X-axis direction. And
The joints of the trapezoidal projection areas corresponding to the projection optical systems Pa to PLg overlap on the photosensitive substrate P. Above mask stage MST, alignment optical systems 500A and 500 for aligning mask M and photosensitive substrate P are provided.
B is provided. Alignment optical system 500A, 5
00B is movable in the Y-axis direction by a drive mechanism (not shown), and the illumination optical system IL
And the mask M, and retreats from the illumination area during scanning exposure. The alignment optical systems 500A and 500B detect mask alignment marks formed on the mask M and detect substrate alignment marks formed on the photosensitive substrate P via the projection optical systems PLa and PLg. A movable mirror 502a extending in the Y-axis direction is provided at an end on the -X side on the substrate stage PST, and a movable mirror 502b extending in the X-axis direction is provided at an end on the -Y side. A laser interferometer 501a capable of detecting the position of the substrate stage PST in the X-axis direction and the Y-axis direction by irradiating the movable mirrors 502a and 502b with laser light at positions opposed to the movable mirrors 502a and 502b, respectively. , 501
b are provided respectively.

A case where four devices (pattern formation areas) PA1 to PA4 are formed on the photosensitive substrate P by the exposure apparatus EXJ will be described. The exposure apparatus EXJ detects alignment marks m1 to m4 provided at the four corners of the pattern formation areas PA1 to PA4 by the alignment optical systems 500A and 500B while detecting the position of the photosensitive substrate P by the laser interferometers 501a and 501b. Detect sequentially. Specifically, the exposure apparatus EXJ includes a substrate stage PS
T is arranged at a predetermined position, and two substrate alignment marks m1, m2 on the -X side of the first pattern formation area PA1 on the photosensitive substrate P and a mask alignment mark (not shown) corresponding thereto are aligned with the alignment optical system 500A. , 500
B detects through the projection optical systems PLa and PLg. Next, exposure apparatus EXJ moves substrate stage PST, and detects two substrate alignment marks m4 and m3 on the + X side of pattern formation area PA1 by alignment optical systems 500A and 500B via projection optical systems PLa and PLg. During this mark detection, the laser interferometer detects the position of the substrate stage PST (photosensitive substrate P). After detecting the alignment marks m1 to m4 of the first pattern formation area PA1, the exposure apparatus EXJ sets the alignment marks m1 of the first pattern formation area PA1.
As in the detection operations of .about.m4, the substrate stage PST is moved, and the alignment optical systems 500A and 500B are used to move the substrate alignment marks m1,.
m2 and the corresponding mask alignment mark are detected, and then the substrate alignment marks m3 and m4 are detected. Also at this time, the laser interferometer detects the position of the photosensitive substrate P. Hereinafter, similarly, the exposure apparatus EXJ sequentially detects the substrate alignment marks m1 to m4 in the third and fourth pattern formation areas PA3 and PA4.

As described above, the exposure apparatus EXJ repeats the step movement of the mask M and the photosensitive substrate P while detecting the positions of the photosensitive substrate P and the mask M by the laser interferometer, and detecting the positions of the pattern forming areas PA1 to PA4. The respective alignment marks m1 to m4 are detected. Then, the exposure apparatus EXJ uses the mask M for each pattern formation region based on the detection results of the alignment optical systems 500A and 500B.
An image characteristic such as a position error between the image and the photosensitive substrate P and image characteristics such as shift, rotation, and scaling are calculated, a correction value is calculated from the obtained error information, and an exposure process is performed based on the correction value. When performing the exposure processing, the exposure processing is performed on the pattern formation area PA4 that was finally subjected to the alignment processing. That is, the mask M is illuminated with the exposure light while the substrate stage PST supporting the photosensitive substrate P and the mask stage MST supporting the mask M are synchronously moved in the X-axis direction, so that the pattern formation area PA4 of the photosensitive substrate P is formed.
Is exposed. Pattern formation area PA4
After the exposure process for the pattern formation regions PA3, PA2, and PA1, the scanning exposure process is similarly performed for the pattern formation regions PA3, PA2, and PA1.

[0007]

However, the above-mentioned conventional exposure apparatus and exposure method have the following problems. In the conventional method described above, the photosensitive substrate P (pattern forming areas PA1 to PA4) is formed by a laser interferometer.
Pattern formation areas PA1 to PA
After detecting the alignment marks m1 to m4 corresponding to No. 4, each of the pattern forming areas PA1 to PA4 is exposed. Here, when the size of the photosensitive substrate P is increased, each pattern forming area P by the laser interferometer is used.
In order to detect the positions of A1 to PA4, it is necessary to increase the size of the movable mirror with the increase in the size of the photosensitive substrate P, that is, to lengthen the movable mirror. However, if the length of the movable mirror is lengthened, a problem arises in processing accuracy, such as the bending of the reflection surface of the movable mirror. A plurality of short moving mirrors are provided corresponding to each of the pattern forming regions, and a plurality of laser interferometers are provided corresponding to the moving mirrors. It is conceivable to perform position detection while switching the laser interferometer used for detection. However, there is a case where a switching error occurs and accurate position detection cannot be performed.

The present invention has been made in view of such circumstances, and a plurality of pattern formation regions (devices) on a substrate.
It is an object of the present invention to provide an exposure method, an exposure apparatus, and a device manufacturing method capable of accurately performing position detection and alignment processing of each of these pattern formation regions to form an accurate exposure processing when forming a pattern.

[0009]

In order to solve the above-mentioned problems, the present invention employs the following structure corresponding to FIGS. 1 to 18 shown in the embodiment. The exposure method of the present invention
In an exposure method of exposing a pattern of a mask (M) on a substrate (P) by synchronously moving a mask (M) and a substrate (P) in a first direction (X), a plurality of substrates (P) are exposed. The exposure area (PA1 to PA9) is divided into blocks (BR1 to BR3), and the alignment of the mask (M) and the substrate (P) is performed for each of the blocks (BR1 to BR3) of the plurality of exposure areas (PA1 to PA9). After performing, the pattern of the mask (M) is exposed on the substrate (P).

According to the present invention, the exposure area (pattern forming area) to be exposed on the substrate is divided into a plurality of blocks, and the alignment (alignment) processing and the exposure processing are sequentially performed for each block. Even when the size is increased, the substrate may be divided into a plurality of blocks and each processing may be performed, and accurate alignment processing and exposure processing can be performed for each block. Since the position detection operation in the above-described processing (alignment processing and exposure processing) for each block can be performed by one position detection apparatus without switching between a plurality of position detection apparatuses, processing for one block (alignment processing and exposure processing) is performed. processing)
In this case, no device switching error occurs.

An exposure apparatus (EX) of the present invention moves a mask (M) and a substrate (P) in a first direction (X) in synchronization with each other to shift a pattern of the mask (M) with respect to the substrate (P). In an exposure apparatus for exposing, a plurality of position detection devices arranged side by side in a first direction (X) and capable of detecting a position of a substrate (P) in a second direction (Y) intersecting the first direction (X). An apparatus (Py1 to Py3), an alignment unit (AL) for aligning the substrate (P) with the mask (M),
According to the position of the substrate (P), a plurality of position detection devices (Py1
To Py3), and selects one of the plurality of position detection devices (Py1 to Py3) corresponding to the exposure areas (PA1 to PA9) to be exposed on the substrate (P), and selects the position detection device. Control unit (CON) that performs alignment and exposure in the alignment unit (AL) based on the detection position of
T).

According to the present invention, a plurality of position detecting devices are arranged side by side in the first direction which is the scanning direction, and the plurality of position detecting devices are switched and controlled in accordance with the position of the substrate. By switching the position detection device used for position detection according to the position of the substrate even if it is short, position detection can be performed for each of a plurality of exposure regions. When exposing the first exposure region among the plurality of exposure regions, the exposure is performed after performing alignment processing in the alignment unit based on the detection result of the first position detection device, and exposing the second exposure region. Performs an exposure after performing alignment processing in an alignment unit based on a detection result of the second position detection device, thereby performing a switching operation of a plurality of position detection devices when processing is performed on one exposure region (pattern formation region). Since the position can be detected by one position detecting device without any problem, accurate position detection and exposure processing can be performed without including a switching error of the position detecting device for each of the exposure regions.

In the device manufacturing method of the present invention, a step (204) of exposing a device pattern drawn on a mask (M) to a substrate (P) using the exposure method described above or the exposure apparatus (EX) described above. ) And a step (204) of developing the exposed substrate (P).

According to the present invention, high-precision alignment processing and exposure processing can be performed for each block of a plurality of exposure areas, so that the accuracy of a device pattern to be manufactured can be improved.

[0015]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An exposure apparatus according to the present invention will be described below with reference to FIGS. FIG. 1 is a schematic perspective view showing an embodiment of the exposure apparatus of the present invention, and FIG. 2 is a schematic configuration diagram. 1 and 2, an exposure apparatus EX includes a mask stage MST that supports a mask M on which a pattern is formed, and a substrate stage PST that supports a photosensitive substrate P.
And an illumination optical system IL for illuminating the mask M supported by the mask stage MST with the exposure light EL, and an image of the pattern of the mask M illuminated by the exposure light EL on the photosensitive substrate P supported by the substrate stage PST. Projection optical system PL for projection
An alignment system (alignment unit) AL for detecting an alignment mark provided on the photosensitive substrate P; and a plurality of lasers for detecting the position of a mask stage MST supporting the mask M in the X-axis direction (first direction). Interferometers (position detection devices) Mx1 and Mx2 and mask stage M
Laser interferometer (position detection device) My1 for detecting the position of ST in the Y-axis direction (second direction), and X-axis direction (first direction) of substrate stage PST supporting photosensitive substrate P
, A plurality of laser interferometers (position detection devices) Px1 and Px2 for detecting the position of the substrate stage PST, and a plurality of laser interferometers (position detection devices) Py1 for detecting the position of the substrate stage PST in the Y-axis direction (second direction). Py2 and Py3. The mask M supported by the mask stage MST and the photosensitive substrate P supported by the substrate stage PST are arranged in a conjugate positional relationship via the projection optical system PL. The illumination optical system IL has a plurality of, in this embodiment, seven illumination system modules IM (IMa to IMg). Further, a plurality of projection optical systems PL corresponding to the number of the illumination system modules IM, and in this embodiment, seven projection optical systems P
La to PLg. Projection optical systems PLa to PLg
Are arranged corresponding to the respective illumination system modules IMa to IMg. The photosensitive substrate P is formed by applying a photosensitive agent (photoresist) to a glass plate (glass substrate).

Here, the exposure apparatus EX according to the present embodiment
Is a scanning type exposure apparatus that performs scanning exposure by synchronously moving the mask M and the photosensitive substrate P with respect to the exposure light EL. In the following description, the direction of the optical axis of the projection optical system PL will be referred to as the Z-axis direction.
In the direction perpendicular to the axial direction, the synchronous movement direction of the mask M and the photosensitive substrate P is defined as the X-axis direction (first direction, scanning direction), and the direction orthogonal to the Z-axis direction and the X-axis direction (scanning direction) is defined as the Y-axis direction. (Second direction, non-scanning direction). In addition, directions around the X axis, around the Y axis, and around the Z axis are defined as θX direction, θY direction, and θZ direction.

As shown in FIG. 2, the illumination optical system IL includes a light source 1 such as an ultra-high pressure mercury lamp, an elliptical mirror 1a for condensing a light beam emitted from the light source 1, and a condensing light by the elliptical mirror 1a. A dichroic mirror 2 that reflects a light beam having a wavelength necessary for exposure and transmits light beams having other wavelengths among the light beams that have been transmitted, and a wavelength (usually, g, a wavelength selection filter 3 that passes only at least one band of the h and i lines), a plurality of light beams from the wavelength selection filter 3,
In the present embodiment, a light guide 4 is provided, which branches into seven light beams and enters each of the illumination system modules IMa to IMg via the reflection mirror 5.

A plurality of illumination system modules IM, seven in this embodiment, IMa to IMg, are provided (however, FIG.
In FIG. 2, only those corresponding to the illumination system module IMg are shown for convenience), and each of the illumination optical systems IMa to IMg is arranged at a constant interval in the X-axis direction and the Y-axis direction. The exposure light EL emitted from each of the plurality of illumination system modules IMa to IMg
Illuminates different small areas on the mask M (illumination areas of the illumination optical system).

Each of the illumination system modules IMa to IMg includes an illumination shutter 6, a relay lens 7, a fly-eye lens 8 as an optical integrator, and a condenser lens 9. The illumination shutter 6
The light guide 4 is disposed on the downstream side of the optical path so as to be able to move forward and backward with respect to the optical path. The illumination shutter 6 blocks light from the light path when the light path is blocked, and releases the light from the light path when the light path is released. The illumination shutter 6 has
A shutter driving unit 6a for moving the illumination shutter 6 forward and backward with respect to the optical path of the light beam is connected. The shutter driving section 6a is controlled by the control device CONT.

Each of the illumination system modules IMa to IMg is provided with a light amount adjusting mechanism 10. The light amount adjustment mechanism 10 adjusts the exposure amount of each optical path by setting the illuminance of a light beam for each optical path, and includes a half mirror 11, a detector 12, a filter 13,
And a filter driving unit 14. Half mirror 11
Is arranged in the optical path between the filter 13 and the relay lens 7, and makes a part of the light flux transmitted through the filter 13 enter the detector 12. Each of the detectors 12 always independently detects the illuminance of the incident light flux, and outputs a detected illuminance signal to the control device CONT.

As shown in FIG. 3, the filter 13 is formed by patterning a glass plate 13a in an interdigital pattern with Cr or the like, and the transmittance gradually changes linearly within a certain range along the X-axis direction. It is arranged between the illumination shutter 6 and the half mirror 11 in each optical path.

The half mirror 11 and the detector 1
2 and the filter 13 are provided for each of a plurality of optical paths. The filter driving unit 14 moves the filter 13 in the X-axis direction based on an instruction from the control device CONT. Then, the light amount for each optical path is adjusted by moving the filter 13 by the filter driving unit 14.

The light beam transmitted through the light amount adjusting mechanism 10 reaches the fly-eye lens 8 via the relay lens 7. The fly-eye lens 8 forms a secondary light source on the exit surface side, and can illuminate the illumination area of the mask M with uniform illuminance via the condenser lens 9. The exposure light EL that has passed through the condenser lens 9 passes through the catadioptric optical system 15 including the right-angle prism 16, the lens system 17, and the concave mirror 18 in the illumination system module, and then passes through the mask M to a predetermined position. Illuminate in the illumination area. The mask M is illuminated in different illumination areas by the respective exposure lights EL transmitted through the illumination system modules IMa to IMg.

Mask stage MST supporting mask M
Has a long stroke in the X-axis direction for performing one-dimensional scanning exposure, and a stroke at a predetermined distance in the Y-axis direction orthogonal to the scanning direction. As shown in FIG. 2, the mask stage MST includes a mask stage drive section MSTD that moves the mask stage MST in the X-axis direction and the Y-axis direction. The mask stage driving section MSTD is controlled by the control device CONT.

As shown in FIG. 1, the mask stage MST
Movable mirrors 32a and 32b are respectively provided at the upper edges in the X-axis direction and the Y-axis direction in orthogonal directions. A plurality of, in this embodiment, two laser interferometers Mx1 and Mx2 are arranged to face the movable mirror 32a. Further, a laser interferometer My1 is arranged to face the movable mirror 32b. Each of the laser interferometers Mx1 and Mx2 irradiates the movable mirror 32a with laser light,
The distance to a is detected. The detection results of the laser interferometers Mx1 and Mx2 are output to the controller CONT,
The NT determines the position of the mask stage MST in the X-axis direction and the amount of rotation about the Z-axis based on the detection results of the laser interferometers Mx1 and Mx2. In addition, the laser interferometer M
y1 irradiates the movable mirror 32b with laser light,
Detect the distance to The detection result of the laser interferometer My1 is output to the control device CONT, and the control device CONT obtains the position of the mask stage MST in the Y-axis direction based on the detection result of the laser interferometer My1. Then, the control unit CONT controls the laser interferometers Mx1, Mx2, and Mx
The position (posture) of the mask stage MST is monitored from the output of y1, and the mask stage MST is set to a desired position (posture) by controlling the mask stage driving unit MSTD.

The exposure light EL transmitted through the mask M is incident on each of the projection optical systems PLa to PLg. The projection optical systems PLa to PLg form a pattern image existing in the illumination area of the mask M on the photosensitive substrate P, and project and expose the pattern image on a specific area (projection area) of the photosensitive substrate P.
It is provided corresponding to each of the illumination system modules IMa to IMg.

As shown in FIG. 1, a plurality of projection optical systems PL
a to PLg, projection optical systems PLa, PLc, PL
e, PLg and the projection optical systems PLb, PLd, PLf are 2
They are arranged in rows in a staggered pattern. That is, the projection optical systems PLa to PLg arranged in a staggered manner are adjacent to each other (for example, the projection optical systems PLa and PLb, PL
b and PLc) are displaced by a predetermined amount in the Y-axis direction. Each of these projection optical systems PLa to PLg transmits a plurality of exposure light EL emitted from the illumination system modules IMa to IMg and transmitted through the mask M, and the pattern image of the mask M is formed on the photosensitive substrate P mounted on the substrate stage PST. Is projected. That is, the exposure light EL transmitted through each of the projection optical systems PLa to PLg forms a pattern image corresponding to the illumination area of the mask M on a different projection area on the photosensitive substrate P with a predetermined imaging characteristic.

As shown in FIG. 2, the projection optical systems PLa-P
Each of Lg includes an image shift mechanism 19, two sets of catadioptric optical systems 21 and 22, a field stop 20, and a magnification adjustment mechanism 23. The image shift mechanism 19 is, for example,
The pattern image of the mask M is shifted in the Y-axis direction or the X-axis direction by rotating the two parallel flat plate glasses around the X-axis or the Y-axis, respectively. The exposure light EL that has passed through the mask M passes through the image shift mechanism 19 and then
The light enters the catadioptric optical system 21 of the set.

The catadioptric optical system 21 forms an intermediate image of the pattern of the mask M,
4, a lens system 25 and a concave mirror 26. The right-angle prism 24 is rotatable around the Z axis, and can rotate the pattern image of the mask M.

At this intermediate image position, a field stop 20 is arranged. The field stop 20 sets a projection area on the photosensitive substrate P, and is arranged at a position substantially conjugate with the mask M and the photosensitive substrate P in the projection optical system PL. The light beam transmitted through the field stop 20 enters a second set of catadioptric optical system 22. Catoptric system 22
Includes a right-angle prism 27, a lens system 28, and a concave mirror 29, like the catadioptric optical system 21. The right-angle prism 27 is also rotatable about the Z axis, and the mask M
Can be rotated.

The exposure light EL emitted from the catadioptric optical system 22 passes through a magnification adjusting mechanism 23 and forms a pattern image of the mask M on the photosensitive substrate P at the same magnification. The magnification adjusting mechanism 23 includes, for example, three lenses of a plano-convex lens, a biconvex lens, and a plano-convex lens, and moves the biconvex lens located between the plano-convex lens and the plano-concave lens in the Z direction to change the relative position. Thus, the magnification of the pattern image of the mask M is changed.

Substrate stage PST supporting photosensitive substrate P
Has a substrate holder, and holds the photosensitive substrate P via the substrate holder. The substrate stage PST, like the mask stage MST, has a long stroke in the X-axis direction for performing one-dimensional scanning exposure and a long stroke for stepwise movement in the Y-axis direction orthogonal to the scanning direction. As shown in FIG. 2, the substrate stage driving unit PST moves the substrate stage PST in the X-axis direction and the Y-axis direction.
D is provided. The substrate stage driving unit PSTD is controlled by the control device CONT. Further, the substrate stage PS
T is also movable in the Z-axis direction and in the θX, θY, and θZ directions.

As shown in FIG. 1, movable mirrors (position detecting devices) 34a and 34b are respectively provided at orthogonal edges on the substrate stage PST in the X-axis direction and the Y-axis direction. . Moving mirror 34a extending in Y-axis direction
Has two or more laser interferometers Px in this embodiment.
1, Px2 are arranged facing each other. The movable mirror 34b extending in the X-axis direction has a plurality of,
Laser interferometers (position detecting devices) Py1, Py2, P
y3 are arranged to face each other. Here, each of the plurality of laser interferometers Py1 to Py3 is arranged at equal intervals along the X-axis direction. The movable mirror 34a and the laser interferometers Px1 and Px2 constitute a position detection device capable of detecting the position of the photosensitive substrate P in the X-axis direction (first direction). Further, a position detection device capable of detecting the position of the photosensitive substrate P in the Y-axis direction (second direction) is configured by the movable mirror 34b and the laser interferometers Py1, Py2, and Py3. Each of the laser interferometers Px1 and Px2 irradiates the movable mirror 34a with laser light, and
Detect the distance to The detection results of the laser interferometers Px1 and Px2 are output to the control unit CONT, and the control unit CONT
T calculates the position of the substrate stage PST in the X-axis direction and the amount of rotation about the Z-axis based on the detection results of the laser interferometers Px1 and Px2. Also, a laser interferometer Py
1 to Py3 irradiate the movable mirror 34b with laser light and detect the distance from the movable mirror 34b. Laser interferometers Py1 to Py
The detection result of No. 3 is output to the control device CONT, and the control device CONT obtains the position of the substrate stage PST in the Y-axis direction based on the detection results of the laser interferometers Py1 to Py3. The control device CONT monitors the position (orientation) of the substrate stage PST from the outputs of the laser interferometers Px1, Px2 and Py1 to Py3, and controls the substrate stage driving unit PSTD to control the substrate stage PST.
ST is set to a desired position (posture).

Here, when detecting the position of substrate stage PST in the Y-axis direction, control device CONT responds to the movement of substrate stage PST, that is, in the X-axis direction of substrate stage PST supporting photosensitive substrate P. The laser interferometer used for position detection among the plurality of laser interferometers Py1 to Py3 is switched according to the position.

The mask stage drive section MSTD and the substrate stage drive section PSTD are independently controlled by the control unit CONT. Under the
Each can be moved independently. The control unit CONT monitors both the positions of the mask stage MST and the substrate stage PST,
By controlling D and MSTD, the mask M and the photosensitive substrate P are synchronously moved in the X-axis direction at an arbitrary scanning speed (synchronous moving speed) with respect to the projection optical system PL.

Projection optical systems PLa to PL on photosensitive substrate P
g of the projection areas 50a to 50g each have a predetermined shape,
In the present embodiment, the shape is set to a trapezoidal shape. As shown in FIG. 1, the projection regions 50a, 50c, 50e, and 50g and the projection regions 50b, 50d, and 50f are arranged to face each other in the X-axis direction. Further, the projection areas 50a to 50g are:
The ends (boundaries, joints) of adjacent projection areas are Y
They are arranged in parallel so as to overlap in the axial direction. And
By arranging the boundaries of the projection regions 50a to 50g in parallel so as to overlap each other in the Y-axis direction, the total width of the projection regions in the X-axis direction is set to be substantially equal. By doing so, the exposure amount when performing scanning exposure in the X-axis direction is made equal. in this way,
Projection areas 50a-5 by the respective projection optical systems PLa-PLg
By providing an overlap region (joint portion) where each of 0 g overlaps, a change in optical aberration and a change in illuminance at the joint portion can be made smooth.

Next, the alignment system AL will be described. The alignment system AL detects alignment marks (substrate alignment marks) provided on the photosensitive substrate P. As shown in FIGS. 1 and 2, the projection optical systems PLa, PLc, PLe,
It is provided so as to face the photosensitive substrate P between PLg and the projection optical systems PLb, PLd, PLf. A plurality of alignment systems AL are arranged side by side in the Y-axis direction (second direction), and detect a plurality of substrate alignment marks provided on the photosensitive substrate P. Further, between the projection optical systems PLa, PLc, PLe, PLg and the projection optical systems PLb, PLd, PLf disposed in two rows, the photosensitive substrate P is opposed to the photosensitive substrate P, and the Z direction of the photosensitive substrate P -Side auto-focus detection system (AF detection system) that detects the position in the camera
A mask 60 and a mask-side autofocus detection system 70 that is opposed to the mask M and detects the position of the mask M in the Z-axis direction are provided. A plurality of substrate-side AF detection systems 60 and a plurality of mask-side AF detection systems 70 are also arranged side by side in the Y-axis direction. Here, a plurality of alignment systems A
L, substrate-side AF detection system 60, and mask-side AF detection system 7
Numerals 0 are unitized by being supported by the housing H as shown in FIG. In the following description, the housing H
The AF detection systems 60 and 70 and the alignment system AL supported by are referred to as “alignment unit” as appropriate.

FIG. 4 is a perspective view of the alignment unit U. FIG. 5 is a diagram for explaining the positional relationship among the alignment system AL, the substrate-side AF detection system 60, and the mask-side AF detection system 70 of the alignment unit U, the mask M, and the photosensitive substrate P. Here, FIG.
FIG. 5B is a diagram showing a positional relationship between the mask M and the mask-side AF detection system 70, FIG. 5B is a cross-sectional view of the alignment unit U of FIG. 4 taken along the line AA, and FIG. Substrate P
FIG. 13 is a plan view of a substrate stage PST that supports the substrate viewed from above (+ Z side). Then, the mask side A shown in FIG.
The F detection system 70 corresponds to a cross-sectional view taken along the line BB of FIG.
As shown in FIGS. 4 and 5B, the alignment system AL
Plural (AL1 to AL6) are arranged in the Y-axis direction, which is the non-scanning direction, and six in this embodiment. The alignment systems AL1 to AL6 are arranged between the projection optical systems PLa, PLc, PLe, and PLg arranged in two rows and the projection optical systems PLb, PLd, and PLf, and the projection areas 50a of the projection optical systems PLa to PLg. They are arranged along the arrangement direction of ~ 50g.

As shown in FIG. 5B, of the plurality of alignment systems AL1 to AL6 arranged in the Y axis direction, the alignment system AL2 to AL5 at the center in the Y axis direction is the projection optical system PL.
The alignment systems AL1 and AL6 on both sides in the Y-axis direction are provided inside (PLa to PLg), and are provided outside the projection optical system PL. Here, as shown in FIGS. 5B and 5C, the interval between the outer two alignment systems AL1 and AL6 of the plurality of alignment systems AL1 to AL6 is equal to the length of the photosensitive substrate P in the Y-axis direction. They are set almost equal. As shown in FIGS. 5A and 5B, the interval between the two outer alignment systems AL1 and AL6 is longer than the length of the mask M in the Y-axis direction (the length of the mask M in the Y-axis direction). Above).

On the other hand, as shown in FIG. 5C, a plurality of alignment marks (substrate alignment marks) m1 to m6 used for alignment processing are provided on the photosensitive substrate P. In the present embodiment, six alignment marks m1 to m6 arranged in the Y-axis direction are formed at six locations in the X-axis direction at intervals on the photosensitive substrate P, and a total of 36 alignment marks are formed. Have been. In the figure, the alignment mark is shown as “●”, but for example, a cross mark “+” also shows a box mark “□”.
May be.

In this embodiment, Y on the photosensitive substrate P
Alignment systems AL1 to AL6 are provided corresponding to six alignment marks m1 to m6 arranged in the axial direction. And these six alignment systems AL1 to AL
6 are set so as to face each of the alignment marks m1 to m6, and the alignment system AL1
AL6 face the alignment marks m1 to m6, respectively.
Can be simultaneously detected. That is, in the present embodiment, the arrangement (interval) of the alignment systems AL1 to AL6 is set based on the arrangement (interval) of the alignment marks m1 to m6 formed on the photosensitive substrate P.

As shown in FIGS. 4 and 5B, a plurality of substrate-side AF detection systems 60 (60a to 60g) are provided on both sides of the alignment systems AL1 to AL6 in the X-axis direction. In the present embodiment, the substrate-side AF detection system
There are seven of 60 g. Substrate AF detection system 60a
To 60 g are provided at positions facing the photosensitive substrate P supported by the substrate stage PST, and detect positions in a direction orthogonal to the exposure surface of the photosensitive substrate P, that is, positions in the Z-axis direction. Plural substrate-side AF detection systems 60a-60
g, AF detection systems 60a, 60b, 60d, 60
f and 60g are arranged side by side in the Y-axis direction, and the AF detection systems 60c and 60e are arranged side by side in the Y-axis direction. Then, these two rows of AF detection systems 60a,
60b, 60d, 60f, 60g and AF detection system 60c,
60e are arranged so as to sandwich the alignment system AL (AL1 to AL6).

Of the plurality of substrate-side AF detection systems 60a to 60g, the substrate-side AF detection systems 60b to 60f at the center in the Y-axis direction
Are provided inside the projection optical systems PL (PLa to PLg), and the substrate-side AF detection systems 60a and 60g on both sides in the Y-axis direction are provided outside the projection optical systems PL (PLa to PLg). Here, the outer substrate side AF detection systems 60a and 60g
Are provided adjacent to the outer two alignment systems AL1 and AL6 of the plurality of alignment systems AL1 to AL6, respectively. The distance between the two outer substrate-side AF detection systems 60a and 60g is also set substantially equal to the length of the photosensitive substrate P in the Y-axis direction. Further, the projection optical system P
The substrate-side AF detection systems 60b to 6 provided inside L
0f are arranged in two rows in a staggered manner, and are provided at substantially equal intervals in the Y-axis direction.

The detection results of the substrate-side AF detection systems 60a to 60g are output to the control unit CONT, and the control unit CONT determines the Z-axis direction of the photosensitive substrate P based on the detection results of the substrate-side AF detection systems 60a to 60g. Find the position at. Further, since the substrate-side AF detection systems 60a to 60g are two-dimensionally arranged in each of the X-axis direction and the Y-axis direction, the control device CONT is based on the detection results of the plurality of substrate-side AF detection systems 60a to 60g. And X of the photosensitive substrate P
The attitude in the direction around the axis and the direction around the Y axis can be obtained. The control device CONT drives the substrate stage driving unit PSTD based on the obtained position in the Z-axis direction and the attitude in the directions around the X-axis and the Y-axis, and adjusts the position of the photosensitive substrate P in the Z-axis direction and X Adjustment of the posture in the direction around the axis and the Y axis, that is, leveling adjustment is performed.

As shown in FIGS. 4 and 5A, the alignment unit U includes a plurality of mask-side AF detection systems 70.
(70a to 70d) are provided. In the present embodiment, four mask-side AF detection systems 70a to 70d are provided. The mask-side AF detection systems 70a to 70d are provided at positions facing the mask M supported by the mask stage MST, and detect positions in a direction orthogonal to the pattern formation surface of the mask M, that is, in the Z-axis direction. . Each of the plurality of mask-side AF detection systems 70a to 70d is arranged at equal intervals in the Y-axis direction. Here, as shown in FIG. 5A, the mask-side AF detection system 7
Reference numerals 0a to 70d are provided inside the projection optical system PL (PLa to PLg), and two mask-side AF detection systems 70a,
The interval of 70d is set substantially equal to the length of the mask M in the Y-axis direction.

FIG. 6 is a schematic configuration diagram of the alignment system AL1. In addition, other alignment systems AL2 to AL6 are also
The configuration is equivalent to that of the alignment system AL1. As shown in FIG. 6, an alignment system AL1 includes an alignment light source 81 composed of a halogen lamp for emitting alignment detection light, and a light guide 82 composed of an optical fiber for guiding the detection light emitted from the light source 81 to a relay lens 83. , A half mirror 84 provided on the downstream side of the optical path of the relay lens 83, and the half mirror 84 and the photosensitive substrate P to be detected.
(Alignment marks m1 to m6),
An objective lens 85 for irradiating the detection light having passed through the half mirror 84 onto the photosensitive substrate P, and a deflecting mirror 86 for guiding reflected light generated on the photosensitive substrate P (alignment mark) by irradiation of the detection light via the half mirror 84. , A beam splitter (branching device) 87 that branches the reflected light from the deflecting mirror 86, a low-magnification alignment light receiving system 88 into which one of the two light beams split by the beam splitter 87 enters, and the other light beam And a high-magnification alignment light-receiving system 89 into which light enters. The low-magnification alignment light-receiving system 88 has a low-magnification lens system 88A and a low-magnification image sensor (CCD) 88B, and can measure a wide area on the photosensitive substrate P with a predetermined accuracy. The high-magnification alignment light-receiving system 89 has a high-magnification lens system 89A and a high-magnification image sensor (CCD) 89B, and can measure a narrow area of the photosensitive substrate P with high accuracy. These low magnification alignment light receiving system 88A and high magnification alignment light receiving system 88B
And are arranged coaxially. Then, light (reflected light) generated by irradiating the photosensitive substrate P (substrate alignment mark) with the alignment detection light is received by the low-magnification alignment light receiving system 88 and the high-magnification alignment light receiving system 89, respectively.

The low-magnification alignment light-receiving system 88 generates an alignment mark m1 (m
Search alignment processing for detecting position information of 2 to m6) with rough accuracy is performed. On the other hand, the high-magnification alignment light receiving system 89 detects the position information of the alignment mark m1 (m2 to m6) with high accuracy based on the light information from the narrow area of the photosensitive substrate P irradiated by the alignment detection light. Perform alignment processing. Each of the low-magnification alignment light-receiving system 88 and the high-magnification alignment light-receiving system 89 outputs a light-receiving signal to the control unit CONT, and the control unit CONT performs image processing based on the light-receiving signals of the alignment light-receiving systems 88 and 89, respectively. Ask for information. Here, the control device CONT performs fine alignment processing by the high-magnification alignment light receiving system 89 with reference to the search alignment processing result by the low-magnification alignment light receiving system 88.

When the mark position information is obtained by the alignment system AL, the mark position is obtained from the mark edge information by image processing. Note that a pattern matching method may be used as a method for obtaining a mark position. That is, the control device CONT is connected to a storage device (not shown) that stores the template image, and obtains the coordinates of the pattern that matches the template (the position in the moving coordinate system of the stage) by pattern matching. The controller CONT uses these coordinate values to determine the amount of deviation that has occurred during the splicing exposure or the overlay exposure, and provides a correction parameter to the substrate stage driving unit PSTD during the next and subsequent exposures, thereby achieving alignment accuracy. Enhance.

The above alignment system AL1 (AL2 to AL
In 6), the light source 81, the light guide 82, and the relay lens system 83 constitute a light transmission system of an alignment system.
Beam splitter 87, low magnification alignment light receiving system 8
8 and the high magnification alignment light receiving system 89 constitute a light receiving system of the alignment system. The light source 81 may be provided in each of the plurality of alignment systems AL1 to AL6, or the light emitted from one light source 81 may be branched by a plurality of light guides (optical fibers) 82, and the plurality of branched light beams may be used. May be supplied to each of the alignment systems AL1 to AL6. The alignment detection light is preferably non-photosensitive to the resist on the photosensitive substrate P, and cuts light of a specific wavelength from the light (white light) emitted from the light source 81 composed of a halogen lamp. The filter may be provided on the optical path between the light source 81 and the photosensitive substrate P.

FIG. 7 is a schematic configuration diagram showing the substrate side AF detection system 60a. Note that the other substrate-side AF detection systems 60b to 60b
0g and the mask-side AF detection systems 70a to 70d
The configuration is the same as that of the detection system 60a. As shown in FIG.
The AF detection system 60a includes an AF light source 61 composed of an LED that emits AF detection light, a light transmission lens system 62 on which the detection light emitted from the light source 61 is incident, and a light transmitted through the light transmission lens system 62. A mirror 63 that guides the photosensitive substrate P (or mask M) to be detected from an inclined direction, and a mirror 63
A mirror 64 for guiding the reflected light generated on the photosensitive substrate P (or the mask M) based on the detection light irradiated through the light receiving lens system 65, and an image pickup device (CCD) for receiving the light passing through the light receiving lens system 65 66. The light transmitting lens system 62 irradiates the photosensitive substrate P after shaping the detection light into, for example, a slit shape. Here, as shown in FIG. 7, the position of the photosensitive substrate P to be detected in the Z-axis direction is ΔZ.
When displaced, the slit-shaped detection light emitted from the inclined direction displaces the image forming position in the X-axis direction of the image sensor 66 by ΔX. The imaging signal of the imaging device 66 is output to the control device CONT, and the control device CONT
The displacement amount ΔZ of the photosensitive substrate P in the Z-axis direction is obtained based on the displacement amount ΔX of the imaging position with respect to the reference position. Here, if the magnification from the incident surface to the exit surface side of the light receiving lens system 65 is set to N times (for example, 10 times), the image pickup device 66 becomes N times (1 times) the displacement ΔZ of the photosensitive substrate P.
0 times).

The AF detection system 60a (60b to 60g,
70a to 70d), the light source 61, the light transmitting lens system 62,
And the mirror 63 constitute a light transmission system of an AF detection system,
The mirror 64, the light receiving lens system 65, and the image sensor 66 are A
The light receiving system of the F detection system is configured. The light source 61 may be provided in each of the plurality of AF detection systems 60a to 60g (70a to 70d), or the light emitted from one light source 61 may be branched by a plurality of light guides (optical fibers). A configuration in which a plurality of branched lights are supplied to each of a plurality of AF detection systems may be employed. It is also desirable that the AF detection light be non-photosensitive to the resist on the photosensitive substrate P. A filter that cuts light of a specific wavelength out of the light emitted from the light source 61 is provided by the light source 61 and the photosensitive substrate It is good also as a structure provided on the optical path between P and.

Incidentally, the alignment system AL in the present embodiment is an off-axis system, and when performing an alignment process, a baseline amount which is a relative position between the mask M and the substrate alignment system AL is measured. Hereinafter, the baseline measurement method will be described. As shown in FIGS. 1, 2 and 5, a mask M is provided with a baseline measurement mark (mask-side AIS mark) 90, and the substrate stage PST is provided with a baseline measurement mark (substrate side mark). A reference member 92 having an (AIS mark) 91 is provided. The formation position (height) of the substrate-side AIS mark 91 in the Z-axis direction is set so as to substantially coincide with the surface (exposure surface) of the photosensitive substrate P. The mask-side AIS mark 90 is provided in a predetermined positional relationship with respect to a specific position (for example, a center position) of the mask M. The mask-side AIS mark 90 and the substrate-side AIS mark 91 correspond to each other, and are provided in a plurality in the Y-axis direction. Further, as shown in FIG. 2, below the reference member 92, an AIS light receiving system 94 capable of receiving light passing through the reference member 92 is embedded in the substrate stage PST. AI
The S light receiving system 94 includes a lens system 95 and an imaging device (CCD) 96 that receives light passing through the lens system 95.

Next, the baseline measurement procedure will be described with reference to FIG. As shown in FIG.
The F detection system 60 detects the distance from the reference member 92 having the substrate-side AIS mark 91 provided on the substrate stage PST, and the mask-side AF detection system 70 detects the distance from the mask M having the mask-side AIS mark 90. Is detected. The control device CONT is based on the detection results of the substrate-side AF detection system 60 and the mask-side AF detection system 70,
The distance between the mask M and the reference member 92 is obtained (Step S)
A1). At this time, the position of the mask stage MST supporting the mask M is the laser interferometers Mx1, Mx2, My
1 and the position of the substrate stage PST is detected by the laser interferometers Px1, Px2 and Py1.
That is, the mask M (mask stage MST) is the laser interferometer My1, and the substrate stage PST is the laser interferometer Py.
The coordinate in the Y-axis direction is also detected using any one of 1, Py2, and Py3.

Next, as shown in FIG. 8B, the control device CONT is provided with a so-called through-the-lens (TTL).
The AIS mark 9 of the mask M is picked up by the image sensor 96 according to the method.
0 and the AIS mark 91 on the substrate stage PST, and the mask M and the substrate stage P
A relative position with respect to ST is obtained (step SA2). Specifically, the control device CONT uses the image sensor 96 to control the mask side A
The mask stage MST and the substrate stage PST are moved so that the image of the IS mark 90 matches the image of the substrate-side AIS mark 91, and the mask-side AIS mark 90 of the mask M is illuminated by the illumination optical system IL. The illumination light (exposure light) that has passed through the mask M passes through the projection optical system PL and the substrate-side AIS mark 91, and is guided to the image sensor 96.
Here, the control device CONT adjusts the position of the substrate stage PST in the Z-axis direction and the image characteristics of the projection optical system PL based on the distance between the mask M and the reference member 92 obtained in step SA1, and Each image of the mark 90 and the substrate-side AIS mark 91 is formed (focused) by the image pickup device 96. At this time, the position of the mask stage MST supporting the mask M is detected by the laser interferometers Mx1, Mx2, and My1, and the position of the substrate stage PST is detected by the laser interferometers Px1, Px2, and Py1. It should be noted that the image sensor 9 is exposed by using the exposure light.
When the AIS marks 90 and 91 are imaged by the
In order to obtain the optimal light amount (illuminance) on 6, for example,
The filter 13 in the illumination optical system IL can be driven.

Next, as shown in FIG. 8 (c), the control device CONT moves the substrate stage PST to move the substrate stage PST to the center of the measurement area of the alignment system AL (specifically, an index mark provided in the measurement area). The AIS mark 91 of the substrate stage PST is made coincident, and the position of the substrate stage PST at this time is detected by the laser interferometers Px1, Px2, and Py1 (step SA3). Step SA2 and step SA
From the stage position detection result obtained by the laser interferometer obtained in step 3, a baseline amount, which is a relative position between the mask M and the alignment system AL, is obtained. Then, based on the obtained baseline amount, the control device CONT moves the photosensitive substrate P placed on the substrate stage PST to the alignment system AL.
To align with the mask M.

The baseline measurement may be performed each time the exposure processing is started, or may be performed at predetermined time intervals (for example, every 10 hours, every day, etc.), and at each predetermined number of lots. Good. In addition, the above-mentioned AIS mark 90,
While the image of the image 91 is captured by the image sensor 96, the projection optical system PL
The image shift mechanism 19 of (PLa to PLg), the magnification adjustment mechanism 23, and the right-angle prisms 24 and 27 as rotation adjustment mechanisms are driven to adjust image characteristics such as shift, scaling, and rotation of the projection optical systems PLa to PLg. can do.

Next, a method of aligning the mask M with the photosensitive substrate P and a method of exposing the pattern of the mask M to the photosensitive substrate P by using the exposure apparatus EX having the alignment system AL will be described. In the present embodiment,
As shown in FIG. 9, nine pattern formation areas (exposure areas) PA1 to PA9 are set on the photosensitive substrate P, and exposure processing is performed on each of these pattern formation areas PA1 to PA9 to form a device. I do. Among the plurality of pattern formation areas PA1 to PA9, the pattern formation area PA
1 to PA3 are set side by side in the Y-axis direction (second direction), and three pattern formation areas PA4 to PA6 are set in the Y-axis direction.
Three pattern forming areas PA7 to PA9 are set side by side in the Y-axis direction. Here, in the following description, the pattern formation area PA1 arranged in the Y-axis direction
To PA3 as “block BR1”, pattern formation area PA
4 to PA6 are “block BR2”, pattern formation area P
A7 to PA9 are appropriately referred to as “block BR3”. Therefore, the photosensitive substrate P is set in three blocks BR1, BR2, BR3 divided in the X-axis direction. In addition, each of the pattern formation areas PA1 to PA9 has X
The size in the axial direction is set to be larger than that in the Y-axis direction. Then, among the plurality of alignment marks m1 to m6 arranged in the Y-axis direction, the alignment mark m
1, m2 are arranged in pattern formation areas PA3, PA6, PA9, alignment marks m3, m4 are arranged in pattern formation areas PA2, PA5, PA8, and alignment marks m5, m6 are arranged in pattern formation areas PA1, PA.
4. Alignment mark m to be placed on PA7
The respective intervals of 1 to m6 are set in advance. The alignment marks m1 to m6 arranged in the Y-axis direction
Are arranged at predetermined intervals in the X-axis direction, so that the pattern formation areas PA3, PA6, P
Alignments m1 and m2 are arranged at four corners of A9, alignments m3 and m4 are arranged at four corners of pattern formation areas PA2, PA5, and PA8, and four corners of pattern formation areas PA1, PA4, and PA7. Alignments m5 and m6 are arranged.

Then, the laser interferometers Py arranged in the X-axis direction
The arrangement (interval) of 1 to Py3 is set so as to correspond to a plurality of blocks BR1, BR2, BR3 arranged in the X-axis direction on the photosensitive substrate P. That is, the laser interferometer Py
The intervals of 1 to Py3 are determined by the pattern formation areas PA1 and PA3.
4. Set according to the length of PA7 in the X-axis direction. The photosensitive substrate P is a large substrate,
The length of the photosensitive substrate P in the X-axis direction is shorter than the length of the photosensitive substrate P in the X-axis direction, and the movable mirror 34b is manufactured with high processing accuracy.

Hereinafter, FIGS. 10 to 15, FIG. 16, and FIG.
The alignment processing procedure and the exposure processing procedure will be described with reference to the flowchart of FIG. After the baseline measurement is performed as described with reference to FIG.
As shown in (a), the control device CONT moves the substrate stage PST, and moves the alignment marks m1 to m6 in the first row from the −X side provided on the photosensitive substrate P and the alignment systems AL1 to AL6. Make them face each other. As described above, in the present embodiment, the arrangement (interval) of the alignment systems AL1 to AL6 is set based on the arrangement (interval) of the alignment marks m1 to m6 formed on the photosensitive substrate P. And the control device CON
T is the X-axis direction of the substrate stage PST at this time and θ
The position in the Z direction is detected using the laser interferometers Px1 and Px2, and a plurality of laser interferometers Py1 to Px are detected.
One laser interferometer Py1 corresponding to the pattern formation areas PA1 to PA3 (block BR1) is selected from y3, and the position of the substrate stage PST in the Y-axis direction is detected using the laser interferometer Py1. At this time, the laser interferometers Py2 and Py3 do not face the movable mirror 34b.
Then, the control device CONT detects the position of the substrate stage PST with the laser interferometer and, while detecting the position of the alignment system AL1.
~ AL6 and alignment mark m1 in the first row from -X side
To m6, the alignment marks m1 to m6 respectively corresponding to the plurality of pattern forming areas (exposure areas) PA1 to PA3 arranged in the Y-axis direction are simultaneously detected (step SB1). At this time, two alignment marks m5 and m are provided in the pattern formation area PA1.
6 are arranged, two alignment marks m3 and m4 are arranged in the pattern forming area PA2, and two alignment marks m5 and m6 are arranged in the pattern forming area PA3. Two alignment systems AL5 and AL6 are arranged for pattern formation area PA1, and pattern formation area P
Two alignment systems AL3 and AL4 are arranged for A2, and two alignment systems AL1 and AL2 are arranged for the pattern formation area PA3. That is,
The plurality of alignment systems AL1 to AL6 include pattern formation areas (exposure areas) PA1 to PA3 (PA
4 to PA6, PA7 to PA9)
It is configured to be arranged one by one.

Next, as shown in FIG. 10B, the control device CONT moves the substrate stage PST in the −X direction, and the alignment marks m1 in the second row from the −X side provided on the photosensitive substrate P. To m6 and the alignment systems AL1 to AL6, respectively, the position of the substrate stage PST in the Y-axis direction is detected by the laser interferometer Py1, and the X-axis and θZ of the substrate stage PST are detected by the laser interferometers Px1 and Px2. The position in the direction is detected, and each of the alignment marks m1 to m6 is simultaneously detected (step SB2).

The control unit CONT operates the pattern forming area P
The positions of the alignment marks in the first row and the alignment marks in the second row are detected at two locations separated by a predetermined distance in the X-axis direction with respect to each of A1 to PA3. Correction parameters for correcting image characteristics such as shift, scaling, and rotation for PA3 are obtained (step SB).
3).

Here, after detecting the alignment marks in the first row, the photosensitive substrate P scans the alignment units U in order to detect the alignment marks in the second row. Among the plurality of substrate AF detection systems 60a to 60g arranged in the Y-axis direction
Detect the height position of the surface of the photosensitive substrate P at predetermined intervals in the X-axis direction. That is, the photosensitive substrate P
Are detected at a plurality of grid-like positions.
The detection results of each of these substrate AF detection systems 60a to 60g are output to the control device CONT, and the control device CONT is based on the detection results of the substrate AF detection systems 60a to 60g.
The surface shape of each of the pattern formation areas PA1 to PA3 of the photosensitive substrate P is obtained (step SB4).

As described above, the outer two alignment systems AL1 and AL6 of the plurality of alignment systems AL1 to AL6 are provided with the substrate AF detection systems 60a and 60a.
0 g is provided in close proximity. Therefore, the substrate AF
By performing alignment processing (alignment mark detection) by the alignment system while monitoring the position information of the photosensitive substrate P in the Z-axis direction by the detection systems 60a and 60g, the photosensitive substrate P forms an image of the projection optical system during the alignment processing. It is possible to suppress the inconvenience that the alignment process is performed in a state where the alignment process is largely displaced from the surface in the Z-axis direction.

As described with reference to FIG. 6, the alignment systems AL1 to AL6 are provided with a low-magnification alignment light-receiving system 88 for search alignment and a high-magnification alignment light-receiving system 89 for fine alignment. I have. Therefore, for example, when the alignment mark detection using the high-magnification alignment light-receiving system 89 is impossible, the alignment mark can be detected by switching to the low-magnification alignment light-receiving system 88 and detecting the alignment mark. As described above, by performing the alignment mark detection by switching between the low-magnification and high-magnification alignment light receiving systems, the alignment process can be performed smoothly. It is not necessary to provide the low-magnification and high-magnification alignment light receiving systems in all alignment systems AL1 to AL6, and at least two outer alignment systems AL1 and A1
What is necessary is just to be provided in L6. Of course, it may be provided in all alignment systems AL1 to AL6.

Next, the control unit CONT executes step S
After correcting the image characteristics based on the correction parameters obtained in B3, the laser interferometer Py1, Px1, and Px2 detect the position of the substrate stage PST, and perform exposure processing on the pattern formation area PA1 (step SB5). That is, as shown in FIG.
Moves the substrate stage PST such that the projection optical system PL and the + X side end of the pattern formation area PA1 face each other. At the same time, the controller CONT also moves the mask stage MST supporting the mask M (not shown in FIG. 10) to the −X side, and aligns the mask M with the photosensitive substrate P.
Then, the mask M and the photosensitive substrate P are synchronously moved in the + X direction with respect to the projection optical system PL, and the mask M is illuminated with the exposure light EL, whereby the pattern formation area PA1 is exposed. FIG. 10D shows a state after the scanning exposure for the pattern formation area PA1 is completed. Here, the photosensitive substrate P obtained in step SB4
Based on the surface shape data of the (pattern forming area PA1), the substrate stage PST is moved in the Z-axis direction or θ so that the image plane of the projection optical system and the surface of the photosensitive substrate P match.
Scanning exposure is performed while moving in the X and θY directions to control the attitude of the photosensitive substrate P. Note that a plurality of projection optical systems PLa to
Of PLg, unused projection optical systems (for example, projection optical systems PLa and PLg protruding from pattern formation area PA1)
) Is blocked by the illumination shutter 6 in the optical path.

Next, after the controller CONT corrects the image characteristics based on the correction parameters, the controller CONT performs the laser interferometer Py.
Exposure processing is performed on the pattern formation area PA2 while detecting the position of the substrate stage PST at Step 1, Px1, and Px2 (Step SB6). That is, as shown in FIG. 11A, the control device CONT steps the substrate stage PST in the −Y direction so that the projection optical system PL and the −X side end of the pattern formation area PA2 face each other. At this time, the mask stage MST includes the mask M and the photosensitive substrate P
It only needs to move slightly for fine adjustment to align with the position. Then, the mask M and the photosensitive substrate P are synchronously moved in the -X direction with respect to the projection optical system PL, and the mask M is illuminated with the exposure light EL, whereby the pattern formation area PA2 is exposed. FIG. 11B
5 shows a state after the scanning exposure for the pattern formation area PA2 is completed. Pattern formation area PA2
Also, during the scanning exposure, the scanning exposure is performed while performing the position control and the leveling control of the photosensitive substrate P in the Z-axis direction based on the surface shape data of the pattern formation area PA2 obtained in step SB4.

Here, the photosensitive substrate P scans in the + X direction during the scanning exposure processing for the pattern forming area PA1, and the photosensitive substrate P moves during the scanning exposure processing for the pattern forming area PA2 adjacent to the pattern forming area PA1. Scan in the -X direction. That is, after detecting the alignment marks at two locations in the X-axis direction corresponding to each of the pattern formation areas PA1 to PA3 arranged in the Y-axis direction, a plurality of pattern formation areas PA1 and PA2 adjacent in the Y-axis direction are opposite to each other. The photosensitive substrate P is exposed by synchronous movement in the directions. By doing so, the throughput of the entire exposure apparatus can be improved. That is, in the related art, after the exposure processing for one pattern formation area is completed, in order to perform the exposure processing for the next pattern formation area, the mask (mask stage) must be largely moved in the scanning direction to return to the initial state. However, in the present embodiment, the mask (mask stage) does not need to be largely moved when performing the exposure processing on the next pattern formation area after the exposure processing on one pattern formation area is completed. Since the moving time can be reduced, the throughput can be improved. In the present embodiment, the size of the pattern forming area in the non-scanning direction (Y-axis direction) is smaller than the scanning direction (X-axis direction). 11) As shown in FIG. 11A, moving the photosensitive substrate P stepwise in the Y-axis direction is shorter and more effective.

Next, after the controller CONT corrects the image characteristics based on the correction parameters, the controller CONT performs laser interferometer Py.
Exposure processing is performed on the pattern formation area PA3 while the position of the substrate stage PST is detected at 1, and Px1 and Px2 (step SB7). That is, as shown in FIG. 11C, the control device CONT moves the substrate stage PST stepwise in the −Y direction so that the projection optical system PL and the + X side end of the pattern formation area PA3 face each other. Also at this time, the mask stage MST needs to move only slightly to align the mask M and the photosensitive substrate P, and hardly needs to move. Then, the mask M and the photosensitive substrate P are synchronously moved in the + X direction with respect to the projection optical system PL, and the mask M is illuminated with the exposure light EL, whereby the pattern forming area PA3 is exposed. FIG.
(D) shows a state after the scanning exposure for the pattern formation area PA3 is completed. Even during the scanning exposure for the pattern formation area PA3, the step SB4 is performed.
Scan exposure is performed while performing position control and leveling control of the photosensitive substrate P in the Z-axis direction based on the surface shape data of the pattern formation area PA2 obtained in the step (1). Again,
The scanning direction at the time of the exposure processing on the pattern formation area PA3 is set to be opposite to the scanning direction at the time of the exposure processing on the adjacent pattern formation area PA2.

In the steps SB1 to SB7, the position of the substrate stage PST in the X-axis direction is detected, that is, a plurality of pattern formation areas PA1 to PA3 (block BR1).
As shown in FIGS. 10 and 11, the position detection in the X-axis direction in the alignment processing and the exposure processing is performed by the laser interferometers Px1 and Px2, and the position detection in the Y-axis direction is performed by the laser interferometer Py1. That is, X
Among the plurality of laser interferometers Py1 to Py3 arranged in the axial direction, the laser interferometer used for position detection is one of Py1.
Then, the position is detected by this one laser interferometer Py1,
After an alignment mark is detected based on the position detection value of the laser interferometer Py1 to perform an alignment process between the mask M and the photosensitive substrate P, the pattern of the mask M is exposed to the pattern formation areas PA1 to PA3. Here, a plurality of pattern forming areas PA1 to PA1 arranged in the Y-axis direction are used here.
Each of the PA3s is successively exposed sequentially, and a plurality of laser interferometers Py1 to Py3 are exposed during the continuous exposure.
Of the pattern formation areas PA1 to PA3 (block B
A specific laser interferometer Py1 corresponding to R1) is used for position detection.

Next, as shown in FIG. 12 (a), the control device CONT moves the substrate stage PST so that the control device CONT moves to the alignment marks m1 to m6 in the third row from the -X side provided on the photosensitive substrate P. Alignment system AL1-A
L6 is opposed to each other. And the control device CO
The NT selects one laser interferometer Py2 corresponding to the pattern formation areas PA4 to PA6 (block BR2) among the plurality of laser interferometers Py1 to Py3. Control device CO
The NT switches the laser interferometer used for detecting the position of the substrate stage PST in the Y-axis direction from the laser interferometer Py1 to the selected laser interferometer Py2 in accordance with the movement of the position of the substrate stage PST in the X-axis direction ( Step SB8).

The controller CONT detects the positions of the substrate stage PST in the X-axis direction and the θZ direction at this time using the laser interferometers Px1 and Px2, and detects the position of the substrate stage PST in the Y-axis direction. Detection is performed using the interferometer Py2. Control device CONT
Are aligned in the Y-axis direction with the alignment systems AL1 to AL6 facing the alignment marks m1 to m6 in the third row from the -X side while detecting the position of the substrate stage PST with a laser interferometer. The alignment marks m1 to m6 respectively corresponding to the pattern formation areas (exposure areas) PA4 to PA6 are simultaneously detected (step SB).
9).

When switching the laser interferometer from Py1 to Py2, the position detection result of the laser interferometer Py1 is used for position detection of the laser interferometer Py2. Specifically, the control device CONT controls the laser interferometer Py1 from the laser interferometer Py1.
When switching to y2, for example, the position detection operation of the substrate stage PST by the laser interferometer Py1 is performed a predetermined number of times, and the substrate stage PST by the laser interferometer Py2 is performed.
Is performed a predetermined number of times, and the difference between the average values of these detection results is obtained. Then, the obtained difference is used as a correction value, and the position of the substrate stage PST is detected by the laser interferometer Py2 based on the correction value. in this way,
Laser interferometer Py which is a part of the alignment process for block BR2 (pattern formation areas PA4 to PA6)
The block BR adjacent in the X-axis direction is
The position detection result of the laser interferometer Py1, which is a part of the alignment result of 1 (pattern formation areas PA1 to PA3), is used. At this time, the laser interferometer Py2 is operated, and the difference between the laser interferometers Py1 and Py2 is measured and stored as the offset 1. Thereafter, the substrate stage PST
Is the measured value of the laser interferometer Py2 and the offset 1
And ask for it.

Next, as shown in FIG. 12 (b), the control device CONT moves the substrate stage PST in the −X direction, and aligns the alignment marks m1 to m4 in the fourth row from the −X side provided on the photosensitive substrate P. m6 and each of the alignment systems AL1 to AL6 are opposed to each other, the position of the substrate stage PST in the Y-axis direction is detected by the laser interferometer Py2, and the X-axis direction and θZ of the substrate stage PST are detected by the laser interferometers Px1 and Px2. The position in the axial direction is detected, and each of the alignment marks m1 to m6 is simultaneously detected (step SB10).

The control device CONT controls the pattern forming area P
The positions of the alignment marks in the first row and the alignment marks in the second row are detected at two locations separated by a predetermined distance in the X-axis direction with respect to each of A4 to PA6, and based on these detection results, each pattern forming area PA4 is detected. A correction parameter for correcting image characteristics such as shift, scaling, and rotation of PA6 is obtained (step SB1).
1).

Here, after detecting the third row of alignment marks, the photosensitive substrate P scans the alignment unit U in order to detect the fourth row of alignment marks. Y
Each of the plurality of substrate AF detection systems 60a to 60g arranged in the axial direction detects the height position of the surface of the photosensitive substrate P at predetermined intervals in the X-axis direction. These substrate AF detection systems 6
0a to 60g are output to the control unit CONT, and the control unit CONT outputs the substrate AF detection systems 60a to 60g.
The surface shape of each of the pattern formation areas PA4 to PA6 of the photosensitive substrate P is obtained based on the detection result of 60 g (step SB12).

Next, the control device CONT executes step S
After correcting the image characteristics based on the correction parameters obtained in B11, the laser interferometer Py2 and Px1 and Px2 detect the position of the substrate stage PST and perform exposure processing on the pattern formation area PA4 (step SB1).
3). That is, as shown in FIG. 12C, the control device CONT includes the projection optical system PL and the pattern formation area PA4.
The substrate stage PST is moved such that the + X side end of the substrate stage PST opposes. The mask M is illuminated with the exposure light EL while the mask M and the photosensitive substrate P are synchronously moved in the + X direction with respect to the projection optical system PL, so that the pattern formation area PA is formed.
Exposure processing is performed on 4. FIG. 12D shows a state after the scanning exposure for the pattern formation area PA4 is completed. Here, based on the surface shape data of the photosensitive substrate P (pattern forming area PA4) obtained in step SB12, the substrate stage PST is moved to Z so that the imaging plane of the projection optical system and the surface of the photosensitive substrate P coincide. Scanning exposure is performed while controlling the attitude of the photosensitive substrate P by moving in the axial direction or in the θX and θY directions.

Next, the control unit CONT corrects the image characteristics based on the correction parameters, and then controls the laser interferometer Py.
2, and an exposure process is performed on the pattern formation area PA5 while detecting the position of the substrate stage PST using Px1 and Px2 (step SB14). That is, as shown in FIG. 13A, the control device CONT steps the substrate stage PST in the −Y direction so that the projection optical system PL and the −X side end of the pattern formation area PA5 face each other. At this time, the mask stage MST includes the mask M and the photosensitive substrate P
It only needs to move slightly for fine adjustment to align with the position. The mask M is illuminated with the exposure light EL while the mask M and the photosensitive substrate P are synchronously moved with respect to the projection optical system PL in the -X direction, so that the pattern formation area PA5 is exposed. FIG. 13 (b)
5 shows a state after the scanning exposure on the pattern formation area PA5 is completed.

Next, the control unit CONT corrects the image characteristics based on the correction parameters, and then, controls
2, and exposure processing is performed on the pattern formation area PA6 while detecting the position of the substrate stage PST using Px1 and Px2 (step SB15). That is, as shown in FIG. 13C, the control device CONT steps the substrate stage PST in the −Y direction so that the projection optical system PL and the + X side end of the pattern formation area PA6 face each other. Also at this time, the mask stage MST needs to move only slightly to align the mask M and the photosensitive substrate P, and hardly needs to move. Then, the mask M and the photosensitive substrate P are synchronously moved in the + X direction with respect to the projection optical system PL, and the mask M is illuminated with the exposure light EL, whereby the pattern formation area PA6 is exposed. FIG.
(D) shows a state after the scanning exposure for the pattern formation area PA6 is completed.

In the steps SB9 to SB714, the position detection of the substrate stage PST in the X-axis direction, ie,
A plurality of pattern formation areas PA4 to PA6 (block BR
X in alignment processing and exposure processing for 2)
The position detection in the axial direction is performed by the laser interferometers Px1 and Px2 as shown in FIGS. 12 and 13, and the position detection in the Y-axis direction is performed by the laser interferometer Py2. That is, a plurality of laser interferometers Py1 to Py3 arranged in the X-axis direction
Among them, the laser interferometer used for position detection is one of Py2. Then, the position is detected by the one laser interferometer Py2, the alignment mark is detected based on the position detection value of the laser interferometer Py2, and the alignment process between the mask M and the photosensitive substrate P is performed. Are exposed to the pattern formation areas PA4 to PA6. In this case as well, each of the plurality of pattern formation areas PA4 to PA6 arranged in the Y-axis direction is successively exposed sequentially, and during this continuous exposure, the plurality of laser interferometers Py1 are exposed.
The specific laser interferometer Py2 corresponding to the pattern forming areas PA4 to PA6 (block BR2) among the patterns Py3 to Py3 is used for position detection.

Next, as shown in FIG. 14A, the control device CONT moves the substrate stage PST and moves the alignment marks m1 to m6 in the fifth row from the −X side provided on the photosensitive substrate P. And alignment system AL1
Face each of AL6. And the control device C
The ONT selects one laser interferometer Py3 corresponding to the pattern formation areas PA7 to PA9 (block BR3) among the plurality of laser interferometers Py1 to Py3. Control device C
The ONT uses a laser interferometer Py2 for detecting the position of the substrate stage PST in the Y-axis direction as the position of the substrate stage PST in the X-axis direction moves.
Is switched to the selected laser interferometer Py3 (step SB16).

The controller CONT detects the positions of the substrate stage PST in the X-axis direction and the θZ direction at this time using the laser interferometers Px1 and Px2, and detects the position of the substrate stage PST in the Y-axis direction. Detection is performed using the interferometer Py3. Control device CONT
Are aligned in the Y-axis direction with the alignment systems AL1 to AL6 facing each of the alignment marks m1 to m6 in the fifth row from the −X side while detecting the position of the substrate stage PST with a laser interferometer. The alignment marks m1 to m6 respectively corresponding to the pattern formation areas (exposure areas) PA7 to PA9 are simultaneously detected (step SB).
17). At this time, the laser interferometer Py3 is operated, and the difference between the laser interferometers Py2 and Py3 is stored as the offset 2. Thereafter, the substrate stage PST coordinates are obtained from the measured values of the laser interferometer Py3 and the offsets 1 and 2.

Here, again, the laser interferometer is changed from Py2 to Py.
When switching to 3, the position detection result of the laser interferometer Py2 is used for the position detection of the laser interferometer Py3. That is, the block BR3 (pattern formation areas PA7 to PA7)
In the position detection operation of the laser interferometer Py3, which is a part of the alignment processing relating to 9), the position of the laser interferometer Py2, which is a part of the alignment result of the block BR2 (pattern formation areas PA4 to PA6) adjacent in the X-axis direction, is included. The position detection result is used.

Next, as shown in FIG. 14B, the control device CONT moves the substrate stage PST in the −X direction, and the alignment marks m1 in the sixth row from the −X side provided on the photosensitive substrate P. To m6 and each of the alignment systems AL1 to AL6, the position of the substrate stage PST in the Y-axis direction is detected by the laser interferometer Py3, and the X-axis direction of the substrate stage PST is detected by the laser interferometers Px1 and Px2. The position in the θZ direction is detected, and each of the alignment marks m1 to m6 is simultaneously detected (step SB18).

The control unit CONT operates the pattern forming area P
The positions of the alignment marks in the fifth row and the alignment marks in the sixth row are detected at two locations separated by a predetermined distance in the X-axis direction with respect to each of A7 to PA9, and based on these detection results, each pattern forming area PA7 is detected. Correction parameters for correcting image characteristics such as shift, scaling, and rotation for PA9 are obtained (step SB1).
9).

Here, when the photosensitive substrate P scans the alignment unit U to detect the alignment marks in the sixth row after the alignment marks in the fifth row are detected, a plurality of substrates arranged in the Y-axis direction are used. AF detection system 60a-6
0 g each detect the height position of the surface of the photosensitive substrate P at a predetermined distance interval in the X-axis direction. The detection results of each of these substrate AF detection systems 60a to 60g are stored in the control device CO.
The control device CONT outputs the signal to the substrate AF detection system 6.
The surface shape of each of the pattern forming areas PA7 to PA9 of the photosensitive substrate P is obtained based on the detection results of 0a to 60g (step SB20).

Next, the control device CONT executes step S
After correcting the image characteristics based on the correction parameters obtained in B18, the laser interferometer Py3 and Px1 and Px2 detect the position of the substrate stage PST and perform exposure processing on the pattern formation area PA7 (Step SB21).
That is, as shown in FIG.
T is + X of the projection optical system PL and the pattern formation area PA7.
The substrate stage PST is moved so that the side ends face each other. Then, the mask M and the photosensitive substrate P are combined with the projection optical system PL.
The mask M is exposed to the exposure light E while
By illuminating with L, an exposure process is performed on the pattern formation area PA7. FIG. 14D shows a state after the scanning exposure for the pattern formation area PA7 is completed. Here, based on the surface shape data of the photosensitive substrate P (pattern forming area PA7) obtained in step SB19, the substrate stage PST is moved so that the imaging plane of the projection optical system and the surface of the photosensitive substrate P coincide. Scanning exposure is performed while controlling the attitude of the photosensitive substrate P by moving in the axial direction or in the θX and θY directions.

Next, after the controller CONT corrects the image characteristics based on the correction parameters, the controller CONT then controls the laser interferometer Py.
3, and exposure processing is performed on the pattern formation area PA8 while detecting the position of the substrate stage PST using Px1 and Px2 (step SB22). That is, as shown in FIG. 15A, the control device CONT steps the substrate stage PST in the −Y direction so that the projection optical system PL and the −X side end of the pattern formation area PA8 face each other. At this time, the mask stage MST includes the mask M and the photosensitive substrate P
It only needs to move slightly for fine adjustment to align with the position. Then, the mask M and the photosensitive substrate P are synchronously moved in the -X direction with respect to the projection optical system PL, and the mask M is illuminated with the exposure light EL, whereby the pattern forming area PA8 is exposed. FIG. 15 (b)
5 shows a state after the scanning exposure for the pattern formation area PA8 is completed.

Next, after the controller CONT corrects the image characteristics based on the correction parameters, the controller CONT performs laser interferometer Py.
Exposure processing is performed on the pattern formation area PA9 while detecting the position of the substrate stage PST at Step 3, Px1, and Px2 (Step SB23). That is, as shown in FIG. 15C, the control device CONT steps the substrate stage PST in the −Y direction so that the projection optical system PL and the + X side end of the pattern formation area PA9 face each other. Also at this time, the mask stage MST needs to move only slightly to align the mask M and the photosensitive substrate P, and hardly needs to move. Then, the mask M is illuminated with the exposure light EL while the mask M and the photosensitive substrate P are synchronously moved in the + X direction with respect to the projection optical system PL, so that the pattern forming area PA9 is exposed. FIG.
(D) shows a state after the scanning exposure for the pattern formation area PA9 is completed.

In the steps SB17 to SB23, the position of the substrate stage PST in the X-axis direction is detected, that is,
A plurality of pattern formation areas PA7 to PA9 (block BR
X in alignment processing and exposure processing for 3)
The position detection in the axial direction is performed by the laser interferometers Px1 and Px2 as shown in FIGS. 14 and 15, and the position detection in the Y-axis direction is performed by the laser interferometer Py3. That is, a plurality of laser interferometers Py1 to Py3 arranged in the X-axis direction
Among them, the laser interferometer used for position detection is one of Py3. Then, the position is detected by the one laser interferometer Py3, the alignment mark is detected based on the position detection value of the laser interferometer Py3, and the alignment process between the mask M and the photosensitive substrate P is performed. Is exposed to the pattern formation areas PA7 to PA9. In this case as well, each of the plurality of pattern formation areas PA7 to PA9 arranged in the Y-axis direction is successively exposed sequentially, and during this continuous exposure, the plurality of laser interferometers Py1 are exposed.
The specific laser interferometer Py3 corresponding to the pattern formation areas PA7 to PA9 (block BR3) among the patterns Py3 to Py3 is used for position detection.

As described above, the pattern formation areas PA1 to PA9 to be exposed on the photosensitive substrate P
R1 to BR3, alignment processing and exposure processing are performed for each block, and this processing is performed for a plurality of blocks BR1 to BR3.
R3 is sequentially performed, so that even if the size of the photosensitive substrate P increases, the photosensitive substrate P is divided into a plurality of blocks, and the laser interferometers Py1 to Py corresponding to the respective blocks.
Provision of 3 enables accurate alignment processing and exposure processing for each block without switching the laser interferometer for one block.

In the present embodiment, there are six alignment systems AL1 to AL6. However, it is sufficient that at least three alignment systems are arranged in the Y-axis direction. This reduces the number of alignment marks without reducing the number of alignment marks. The number of mark detection operations can be reduced. The plurality of alignment systems arranged side by side are used to simultaneously measure the respective alignment marks of the plurality of pattern formation regions, so that the throughput can be improved.

[0092] As described above, the laser interferometer Py is used.
The intervals (arrangement) of 1 to Py3 are set corresponding to each of the pattern formation regions (blocks) arranged in the X-axis direction. When the pattern formation regions are adjacent to each other, the arrangement of the laser interferometers Py1 to Py3 is It is set according to the length (size) of the pattern forming area in the X-axis direction. on the other hand,
When the pattern formation regions arranged in the X-axis direction are set apart from each other, the plurality of laser interferometers Py1 to Py
The arrangement of 3 is set according to the size of the pattern formation region and the interval between them.

In the above embodiment, the movable mirror 34b is a single movable mirror, but a plurality of blocks BR1 are arranged in the X-axis direction.
To BR3 (3
) May be arranged on the substrate stage PST.

The exposure apparatus EX in the above embodiment
Is a so-called multi-lens scanning type exposure apparatus having a plurality of projection optical systems adjacent to each other, but the present invention can be applied to a scanning type exposure apparatus having one projection optical system.

The application of the exposure apparatus EX is not limited to an exposure apparatus for a liquid crystal for exposing a liquid crystal display element pattern to a square glass plate, but may be, for example, an exposure apparatus for manufacturing a semiconductor or a thin film magnetic head. Can also be widely applied to an exposure apparatus for manufacturing the same.

The light source of the exposure apparatus EX of this embodiment includes g-line (436 nm), h-line (405 nm), and i-line (365n).
m) as well as a KrF excimer laser (248n
m), an ArF excimer laser (193 nm) and an F ₂ laser (157 nm) can be used.

The magnification of the projection optical system PL is not limited to the same magnification system, but may be any of a reduction system and an enlargement system.

[0098] As the projection optical system PL, using a material which transmits far ultraviolet rays such as quartz and fluorite as the glass material when using a far ultraviolet ray such as an excimer laser, catadioptric or refractive system when using a F ₂ laser Optical system.

Substrate stage PST and mask stage MS
When a linear motor is used for T, any of an air levitation type using an air bearing and a magnetic levitation type using Lorentz force or reactance force may be used. Also,
The stage may be a type that moves along a guide or a guideless type that does not have a guide.

When a plane motor is used as the stage driving device, one of the magnet unit and the armature unit is connected to the stage, and the other of the magnet unit and the armature unit is placed on the moving surface side (base) of the stage. It may be provided.

The reaction force generated by the movement of the substrate stage PST may be mechanically released to the floor (ground) by using a frame member as described in Japanese Patent Application Laid-Open No. 8-166475. The present invention is also applicable to an exposure apparatus having such a structure.

As described in JP-A-8-330224, the reaction force generated by the movement of the mask stage MST is mechanically moved to the floor (ground) using a frame member.
You may escape to The present invention is also applicable to an exposure apparatus having such a structure.

As described above, the exposure apparatus according to the embodiment of the present invention converts various subsystems including the components described in the claims of the present application into predetermined mechanical accuracy, electrical accuracy,
It is manufactured by assembling to maintain optical accuracy. Before and after this assembly, adjustments to achieve optical accuracy for various optical systems, adjustments to achieve mechanical accuracy for various mechanical systems, and various electrical systems before and after this assembly to ensure these various accuracy Are adjusted to achieve electrical accuracy. The process of assembling the various subsystems into the exposure apparatus includes mechanical connection, wiring connection of an electric circuit, and piping connection of a pneumatic circuit between the various subsystems. It goes without saying that there is an assembling process for each subsystem before the assembling process from these various subsystems to the exposure apparatus. When the process of assembling the various subsystems into the exposure apparatus is completed, comprehensive adjustment is performed, and various precisions of the entire exposure apparatus are secured. It is desirable that the exposure apparatus be manufactured in a clean room in which the temperature, cleanliness, and the like are controlled.

The semiconductor device is, as shown in FIG.
Step 201 for designing the function and performance of the device, step 202 for manufacturing a mask (reticle) based on the design step, and a substrate (wafer,
Step 203 of manufacturing a glass plate), a substrate processing step 2 of exposing a pattern of a mask to a substrate by the exposure apparatus of the above-described embodiment, and developing the exposed substrate.
04, a device assembling step (including a dicing step, a bonding step, and a packaging step) 205, an inspection step 206, and the like.

[0105]

As described above, the exposure area to be exposed on the substrate is divided into a plurality of blocks, alignment processing and exposure processing are performed for each block, and this processing is sequentially performed for each of the plurality of blocks. Even if the substrate becomes large, the substrate is divided into a plurality of blocks, and a position detecting device corresponding to each block is provided, so that accurate alignment processing can be performed for each block without switching the position detecting device for one block. And exposure processing.

[Brief description of the drawings]

FIG. 1 is a schematic perspective view showing an embodiment of an exposure apparatus of the present invention.

FIG. 2 is a schematic configuration diagram of FIG.

FIG. 3 is a diagram showing a filter.

FIG. 4 is a schematic perspective view showing an alignment unit provided with an alignment system.

FIG. 5 is a diagram for explaining the arrangement of an alignment system and an AF detection system.

FIG. 6 is a schematic configuration diagram of an alignment system.

FIG. 7 is a schematic configuration diagram of an AF detection system.

FIG. 8 is a diagram for explaining a baseline measurement procedure.

FIG. 9 is a diagram for explaining the exposure method of the present invention.

FIG. 10 is a diagram for explaining the exposure method of the present invention.

FIG. 11 is a diagram for explaining the exposure method of the present invention.

FIG. 12 is a diagram for explaining the exposure method of the present invention.

FIG. 13 is a view for explaining the exposure method of the present invention.

FIG. 14 is a diagram for explaining the exposure method of the present invention.

FIG. 15 is a diagram for explaining the exposure method of the present invention.

FIG. 16 is a flowchart for explaining the exposure method of the present invention.

FIG. 17 is a flowchart for explaining the exposure method of the present invention.

FIG. 18 is a flowchart illustrating an example of a semiconductor device manufacturing process.

FIG. 19 is a perspective view showing a conventional exposure apparatus.

[Explanation of symbols]

32a, 32b Moving mirror (position detecting device) 34a, 34b Moving mirror (position detecting device) 60 (60a to 60g) Substrate-side AF detection system 70 (70a to 70d) Mask-side AF detection system AL (AL1 to AL6) Alignment system (Alignment unit) BR1 to BR3 Block CONT Control device EX Exposure device M Mask m1 to m6 Alignment mark MST Mask stage Mx1, Mx2 Laser interferometer (position detection device) P Photosensitive substrate (substrate) PA1 to PA9 Pattern formation region (exposure region ) PL (PLa to PLg) Projection optical system PST Substrate stage Px1, Px2 Laser interferometer (position detecting device) Py1 to Py3 Laser interferometer (position detecting device)

Claims (9)

[Claims] 1. An exposure method for exposing a pattern of a mask to a substrate by synchronously moving a mask and a substrate in a first direction, wherein the substrate is divided into a plurality of exposure area blocks, Exposing the substrate to a pattern of the mask after performing alignment between the mask and the substrate for each block of the exposure region. 2. The exposure method according to claim 1, wherein the alignment uses at least a part of the alignment result of the adjacent blocks. 3. A method according to claim 1, wherein a plurality of position detection devices for detecting the position of the substrate are provided in the first direction, and an arrangement of the plurality of position detection devices is set corresponding to the blocks of the plurality of exposure areas. The exposure method according to claim 1, wherein: 4. The apparatus according to claim 3, wherein said plurality of position detecting devices comprise a plurality of laser interferometers, and switch the laser beam to be used according to the position of said substrate to detect the position of said substrate. Exposure method. 5. An exposure apparatus for exposing a pattern of the mask on the substrate by synchronously moving a mask and a substrate in a first direction, the exposure apparatus being arranged side by side in the first direction, 1
A plurality of position detection devices capable of detecting a position in a second direction intersecting with the direction of the substrate; an alignment unit for aligning the substrate with the mask; and the plurality of position detection devices according to the position of the substrate. Control for switching and selecting one of the plurality of position detection devices corresponding to an exposure area to be exposed on the substrate, and performing alignment and exposure by the alignment unit based on a detection position of the position detection device. And an exposure apparatus. 6. The apparatus according to claim 1, wherein the position detecting device is provided with a movable mirror provided on a substrate stage movably supporting the substrate, and irradiating the movable mirror with laser light in the second direction of the substrate stage. The exposure apparatus according to claim 5, further comprising: a laser interferometer for detecting a position, wherein the control device switches the plurality of laser interferometers according to movement of the substrate stage. 7. The substrate is divided into a plurality of exposure region blocks in the first direction, and the control device controls one of the plurality of position detection devices corresponding to the exposure region blocks. 6. The exposure apparatus according to claim 5, wherein the plurality of position detection apparatuses are switched for each block of the exposure area while being selected. 8. The exposure apparatus according to claim 5, wherein an interval between the plurality of position detection devices is set corresponding to an interval between the blocks of the exposure area in the first direction. 9. A device pattern drawn on the mask using the exposure method according to any one of claims 1 to 4, or the exposure apparatus according to any one of claims 5 to 8. A step of exposing the substrate to light and a step of developing the exposed substrate.