JP2003338402A - Resistor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a resistor in which a heating layer having small resistance and low stress is stably formed with a high film deposition rate. <P>SOLUTION: In this resistor, the heating layer 3 consisting of polysilicon is formed on a substrate 1 by a catalytic CVD method. A catalytic body used in the catalytic CVD method is composed of a catalytic element selected from Ta, W, and Mo, and the catalytic element of 0.5 ppm to 15% in an atomic ratio is contained in the heating layer 3. <P>COPYRIGHT: (C)2004,JPO

Description

DETAILED DESCRIPTION OF THE INVENTION [0001] The present invention relates to a method for forming a polysilicon layer.
It relates to the formed resistor. [0002] 2. Description of the Related Art Conventionally, a heating layer of a resistor is formed by a thin film forming method.
When forming a film by vacuum deposition, plasma CVD,
Photo CVD, thermal CVD, reactive sputtering,
An on-plating method or the like is used. For example, a heating layer is made of amorphous silicon.
When formed in layers, this amorphous silicon layer
The film is formed by the plasma CVD method.
Have been. According to Japanese Patent Application Laid-Open No. 9-120907,
From Ta, Si, C, O by high frequency sputtering
A technique for fabricating a resistor has been reported. Also, JP
Japanese Patent Application Laid-Open No. 11-10879 discloses a plasma CVD method.
The heating resistor made by adding metal to C and SiO
It has been reported. [0005] However, as described above,
As described above, plasma CVD, sputtering, etc.
When a resistor is formed by heating, a low-resistance film, especially a specific resistance
Is 10^Three-10⁰ (Ωcm)
It is necessary to dope large amounts of Ron and Phosphorus.
Reduces the film deposition rate, increases production costs,
It was not suitable for industrialization. In addition, with such a heat generating layer, the film
Force, which reduces adhesion and consequently
As a result, a large number of defects such as peeling occurred. In view of the above circumstances, the present inventor has made intensive studies.
As a result, the catalytic body was further converted to T using the catalytic CVD method.
a, W, Mo
It was found that this problem was solved. Accordingly, the present invention has been completed based on the above findings.
Its purpose is to provide a low-resistance, low-stress polysilicon.
Providing a resistor in which a capacitor layer is formed stably at a high deposition rate
To provide. [0009] According to the present invention, there is provided a resistor comprising a substrate
A polysilicon layer was formed thereon by catalytic CVD.
The resistor used in the catalytic CVD method is T
a, W, and Mo.
0.5 ppm to 12% atoms of catalytic element in the silicon layer
It is characterized by being contained in a ratio. [0010] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a resistor according to the present invention will be referred to as an ink jet printer.
The description will be made with reference to the drawings, taking the heat generating portion for jet as an example. FIG. 1 shows an ink jet, which is a resistor of the present invention.
FIG. 4 is a cross-sectional view of a main part of a heat generating unit for a computer. FIG. 2 shows a touch panel according to the present invention.
FIG. 3 is a diagram illustrating a schematic configuration of a medium CVD method. According to the resistor shown in FIG.
On an insulating substrate 1 such as glass or ceramics.
Forming an electrode 2 made of a metal such as ruminium or chromium,
The heating layer 3 which is the polysilicon layer is touched on the electrode 2.
Formed on the heating layer 3 by aluminum CVD
Another electrode 4 made of a metal such as chromium or chromium was formed.
Things. The electrodes 2 and 4 are formed by vacuum evaporation or sputtering.
What is necessary is just to form by the shaping method. The heating layer 3 is made of polysilicon.
You. For polysilicon, additional carbon and nitrogen
May be doped with oxygen. The heat generating layer 3 is formed by a catalytic CVD method.
Form. For reference, see Japanese Patent Application Laid-Open
The techniques described may be used. FIG. 2 shows the structure of a catalytic CVD apparatus. same
In the figure, reference numeral 5 denotes a vacuum vessel, and inside the vacuum vessel 5,
A support 6 is disposed, and a substrate for film formation is placed on the support 6.
7 is arranged. Reference numeral 8 denotes a gas introduction unit,
Between the inlet 8 and the film-forming substrate 7, which is the catalyst body.
And an illumination 9. When the semiconductor gas is introduced, the gas
Spouted from the inlet 8 and passed through the filament 9
A film is formed on the plate 7. The conditions for this film formation are, for example, a degree of vacuum of 1.33.
Pa, substrate temperature 250 ° C, temperature of catalyst (filament 9)
The temperature is 2200 ° C. As the raw material gas, silicon hydride gas (mon
Silane, disilane) etc. are used as the carrier gas.
Commonly used hydrogen gas or argon gas, etc.
Is used. In addition, a slight dope
Gas is preferably added, and as a gas therefor, B
_TwoH₆And PH_ThreeOr the like may be used. According to the present invention, the catalyst body contains Ta, W,
Made of a catalyst element selected from Mo,
For example, by raising the temperature to 2200 ° C, the catalyst body is evaporated.
And incorporate the catalyst elements into the thin film layer.
You. Thus, according to the present invention, such a catalyst CV
By the method D, a small amount of doping gas (B_TwoH₆And PH_Threeetc
Gas), a film having a desired specific resistance can be stabilized.
Value was obtained. According to an experiment repeatedly performed by the present inventors,
When the catalyst element is not contained, the B content: 20
000 ppm (2%) or more.
00 ppm (0.5%) or more was required.
However, according to the present invention, if the B content is 100 ppm
As described above, if the P content is 25 ppm or more,
A film having a desired specific resistance was obtained. In the present invention, the catalytic CVD method is used.
Plasma damage
This reduces the internal stress of the film,
A difficult film could be formed. [0024] EXAMPLES (Example 1) As shown in FIG. 3, AF45 glass
Substrate 11 (40 mm × 10 mm × 0.1 m thick)
m) on the heat generating layer 13 by catalytic CVD (catalyst body: Ta)
Is formed. This layer has a thickness of 2 according to the film forming conditions shown in Table 1.
A polysilicon layer was formed to a thickness of 0000 °. According to the drawing, the end of the substrate 11 is supported by the substrate.
It is fixed to the body 10 and a thin film layer is formed on the substrate 11.
(Heat generation layer) 13 is formed, and the amount of warpage δ is measured,
Partial stress was measured. For measuring the crystallization ratio and the resistance,
Substrate 1 made of # 7059 glass (40 mm × 10 mm
X thickness 1 mm) on the heat generating layer 3 by catalytic CVD (catalyst:
Ta) to be used for the heating resistor. This layer is
According to the film forming conditions shown in FIG.
A cone layer was formed. Transfer this sample to a spectroscopic ellipsometer.
ー <Spectral Ellipsometer M manufactured by SOPRA (France)
The crystallization rate was measured using OSS Model ES4G>
Of course, the crystallization rate becomes 60%, and a good polysilicon film is formed.
Obtained. Further, a comb-shaped electrode is deposited on the sample.
Then, the measurement was performed. As a result, the specific resistance is 10¹ Ω · cm
And good results were obtained. On the other hand, to measure other characteristics, use # 7
Substrate 1 made of 059 glass (40 mm x 10 mm x thickness
1 mm wide aluminum electrode 2 is deposited on
The heating layer 3 is formed thereon by a catalytic CVD method (catalyst: Ta).
Formed for heating resistors. This layer has the composition shown in Table 1.
A polysilicon layer is formed at a thickness of 20,000 mm depending on the film conditions.
A film was formed. [0029] [Table 1] With respect to the resistor of the present invention thus obtained,
When the internal stress was measured from the amount of warpage,
There was no sleigh. In addition, a 1 mm
When the poles were evaporated in the cross direction and the presence or absence of heat generation was evaluated,
Sufficient heat generation could be confirmed. (Example 2) Next, the resistor shown in (Example 1) was fabricated.
In manufacturing, the catalyst body was used for forming the heat generating layer.
Change the temperature in the range of 00 to 2500 ° C.
Various resistors are prepared by setting the same as the resistor of (Example 1).
did. As described above, when the temperature of the catalyst body is increased or decreased,
Thus, the content of the catalyst element Ta is set to 0.04 ppm to 18.
Various resistors were manufactured in various ways up to 1%. So
The resistance, heat generation and internal stress of these resistors.
When the adhesion was measured, the results shown in Table 2 were obtained.
Was. The evaluation of heat generation is classified into three types, ○, Δ, and ×.
○ indicates that the calorific value of the standard is satisfied;
When only the part of the part satisfies the specified calorific value,
Shows the case where the calorific value of the standard is not satisfied. The adhesion was evaluated in two ways:
Classify, ○ mark indicates no film peeling, x mark indicates
The case where the film peeling is present on a part or the whole surface is shown. [0035] [Table 2] Also, various resistors as described above are manufactured.
Table 3 shows the case where the catalyst element was changed to W instead of Ta.
Shown in [0037] [Table 3]Similarly, various resistors as described above are manufactured.
Table 4 shows the case where the catalyst element was Mo at this time. [0039] [Table 4] As is clear from these tables, the catalyst body temperature
As the degree increases, the content of catalytic elements increases,
It turns out that resistance becomes small. This is because the catalyst temperature
As it rises, the catalyst element evaporates and the element enters the film
That's why. And the catalyst element enters the film
It can be seen that the specific resistance was reduced and the heat generation was improved.
You. In the case of Ta, the temperature of the catalyst is 2,000 ° C. to 2 ° C.
At 300 ° C, good results are obtained for both heat generation and adhesion.
Was. At a catalyst temperature of 2400 ° C, the catalyst element enters the film.
The film becomes too rough and becomes rough and peels off.
became. At a catalyst temperature of 2500 ° C.,
Out of service. In the case of W, the temperature of the catalyst is from 2000 ° C. to 25 ° C.
At 00 ° C, good results are obtained for both heat generation and adhesion.
Was. When the temperature of the catalyst body is 2700 ° C., the catalyst element enters the film.
The film becomes too rough and becomes rough and peels off.
became. Also, if the temperature is too high, the catalyst
There was. Further, at 3000 ° C. or higher, the catalyst body
The film always breaks in the film, resulting in the film not adhering.
Was. In the case of Mo, the temperature of the catalyst is 2,000 ° C. to 2 ° C.
At 700 ° C, good results are obtained for both heat generation and adhesion.
Was. At a catalyst body temperature of 2800 ° C, the catalyst element enters the film.
The film becomes too rough and becomes rough and peels off.
became. Also, if the temperature is too high, the catalyst
There was. Further, at 3000 ° C. or higher, the catalyst body
The film always breaks in the film, resulting in the film not adhering.
Was. Regarding the internal stress, a general plasma C
If it is an amorphous silicon film produced by the VD method,
1.0 × 10⁸~ 7.5 × 10⁸(N / m^Two) But the book
For resistors made in the examples, considerably smaller values
(One order of magnitude smaller), which has a remarkable effect on adhesion, etc.
You. The present invention is limited to the above embodiment.
Without departing from the scope of the present invention.
Various changes and improvements are acceptable. For example,
According to the present invention, Ta, W, and Mo are used alone in the catalyst body.
Instead of this, a composite material combining these was used
And adding multiple catalytic elements to the heating layer.
No. [0046] As described above, according to the present invention, the substrate support
Of a polysilicon layer formed on the body by catalytic CVD
In an antibody, a catalytic element selected from Ta, W, and Mo
In the range of 0.5 ppm to 12%,
Excellent heat generation, low cost and stable quality
A resistor excellent in mass productivity (adhesion etc.) could be provided. According to the resistor of the present invention, the thermal
Heating part for head, heating part for inkjet, and half
Used as an antistatic coating for the electron beam mechanism of the conductor exposure equipment
Suitable as a protective coating for etching members (reactor).
Can be used. For example, a heating unit for inkjet and
As an antistatic coat for a semiconductor exposure apparatus, a specific resistance of 10 ^Three
-10⁰ (Ω · cm).

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a sectional view of a resistor according to the present invention. FIG. 2 is a diagram showing a schematic configuration of a catalytic CVD method according to the present invention. FIG. 3 is an explanatory diagram showing a method for measuring the amount of warpage of a resistor. [Description of Signs] 1 ... Substrate 2, 4 ... Electrode 5 ... Vacuum container 6 ... Support 7 ... Deposition substrate 8 ... Gas introduction part 9 ... Filament

Claims (1)

Claims: 1. A resistor formed by forming a polysilicon layer on a substrate by a catalytic CVD method, wherein the catalytic body used in the catalytic CVD method is selected from Ta, W, and Mo. It is made of a catalyst element, and the catalyst element is 0.5 pp
A resistor characterized in that it is contained at an atomic ratio of m to 12%.