JP2003332530A - 相変化材料の電子メモリ構造 - Google Patents
相変化材料の電子メモリ構造Info
- Publication number
- JP2003332530A JP2003332530A JP2003118298A JP2003118298A JP2003332530A JP 2003332530 A JP2003332530 A JP 2003332530A JP 2003118298 A JP2003118298 A JP 2003118298A JP 2003118298 A JP2003118298 A JP 2003118298A JP 2003332530 A JP2003332530 A JP 2003332530A
- Authority
- JP
- Japan
- Prior art keywords
- phase change
- change material
- layer
- conductor
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000012782 phase change material Substances 0.000 title claims abstract description 126
- 239000004020 conductor Substances 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 description 26
- 238000000034 method Methods 0.000 description 22
- 239000012212 insulator Substances 0.000 description 16
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 241000555745 Sciuridae Species 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 235000013399 edible fruits Nutrition 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 235000009088 Citrus pyriformis Nutrition 0.000 description 1
- 244000131522 Citrus pyriformis Species 0.000 description 1
- 241000218631 Coniferophyta Species 0.000 description 1
- 241000502522 Luscinia megarhynchos Species 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 101001094026 Synechocystis sp. (strain PCC 6803 / Kazusa) Phasin PhaP Proteins 0.000 description 1
- VIJYFGMFEVJQHU-UHFFFAOYSA-N aluminum oxosilicon(2+) oxygen(2-) Chemical compound [O-2].[Al+3].[Si+2]=O VIJYFGMFEVJQHU-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8418—Electrodes adapted for focusing electric field or current, e.g. tip-shaped
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/90—Bulk effect device making
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/142,494 | 2002-05-10 | ||
| US10/142,494 US6605821B1 (en) | 2002-05-10 | 2002-05-10 | Phase change material electronic memory structure and method for forming |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003332530A true JP2003332530A (ja) | 2003-11-21 |
| JP2003332530A5 JP2003332530A5 (enExample) | 2005-08-04 |
Family
ID=27660882
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003118298A Ceased JP2003332530A (ja) | 2002-05-10 | 2003-04-23 | 相変化材料の電子メモリ構造 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6605821B1 (enExample) |
| EP (1) | EP1369925A3 (enExample) |
| JP (1) | JP2003332530A (enExample) |
| CN (1) | CN1457058A (enExample) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005159325A (ja) * | 2003-11-24 | 2005-06-16 | Samsung Electronics Co Ltd | 相変化記憶素子およびその形成方法 |
| JP2006295130A (ja) * | 2005-03-15 | 2006-10-26 | Elpida Memory Inc | メモリ装置及びその製造方法 |
| JP2007142224A (ja) * | 2005-11-19 | 2007-06-07 | Elpida Memory Inc | 不揮発性半導体記憶装置 |
| US7229887B2 (en) * | 2000-12-13 | 2007-06-12 | Intel Corporation | Method to selectively remove one side of a conductive bottom electrode of a phase-change memory cell and structure obtained thereby |
| JP2007149913A (ja) * | 2005-11-28 | 2007-06-14 | Elpida Memory Inc | 不揮発性メモリ素子及びその製造方法 |
| JP2007243169A (ja) * | 2006-02-07 | 2007-09-20 | Qimonda Ag | 遮熱機構を有する相変化メモリセル |
| JP2007294998A (ja) * | 2005-12-02 | 2007-11-08 | Sharp Corp | 可変抵抗素子及びその製造方法 |
| WO2007125674A1 (ja) * | 2006-04-28 | 2007-11-08 | Sharp Kabushiki Kaisha | 可変抵抗素子及びその製造方法 |
| JP2009218259A (ja) * | 2008-03-07 | 2009-09-24 | Toshiba Corp | 不揮発性記憶装置及びその製造方法 |
| JP2009246309A (ja) * | 2008-03-31 | 2009-10-22 | Toshiba Corp | 不揮発性記憶装置及びその製造方法 |
| US7778069B2 (en) | 2005-10-17 | 2010-08-17 | Renesas Technology Corp. | Semiconductor device and its fabrication method |
| KR101006515B1 (ko) | 2004-06-30 | 2011-01-10 | 주식회사 하이닉스반도체 | 상변환 기억 소자 및 그 제조방법 |
Families Citing this family (164)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6864503B2 (en) * | 2002-08-09 | 2005-03-08 | Macronix International Co., Ltd. | Spacer chalcogenide memory method and device |
| US20050029504A1 (en) * | 2003-08-04 | 2005-02-10 | Karpov Ilya V. | Reducing parasitic conductive paths in phase change memories |
| US7161167B2 (en) * | 2003-08-04 | 2007-01-09 | Intel Corporation | Lateral phase change memory |
| KR100558548B1 (ko) * | 2003-11-27 | 2006-03-10 | 삼성전자주식회사 | 상변화 메모리 소자에서의 라이트 드라이버 회로 및라이트 전류 인가방법 |
| US7038231B2 (en) * | 2004-04-30 | 2006-05-02 | International Business Machines Corporation | Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation |
| US7365355B2 (en) * | 2004-11-08 | 2008-04-29 | Ovonyx, Inc. | Programmable matrix array with phase-change material |
| US7608503B2 (en) | 2004-11-22 | 2009-10-27 | Macronix International Co., Ltd. | Side wall active pin memory and manufacturing method |
| US7220983B2 (en) * | 2004-12-09 | 2007-05-22 | Macronix International Co., Ltd. | Self-aligned small contact phase-change memory method and device |
| US7709334B2 (en) | 2005-12-09 | 2010-05-04 | Macronix International Co., Ltd. | Stacked non-volatile memory device and methods for fabricating the same |
| EP1710850B1 (en) * | 2005-04-08 | 2010-01-06 | STMicroelectronics S.r.l. | Lateral phase change memory |
| US7427770B2 (en) | 2005-04-22 | 2008-09-23 | Micron Technology, Inc. | Memory array for increased bit density |
| US7696503B2 (en) | 2005-06-17 | 2010-04-13 | Macronix International Co., Ltd. | Multi-level memory cell having phase change element and asymmetrical thermal boundary |
| US7598512B2 (en) * | 2005-06-17 | 2009-10-06 | Macronix International Co., Ltd. | Thin film fuse phase change cell with thermal isolation layer and manufacturing method |
| US7534647B2 (en) | 2005-06-17 | 2009-05-19 | Macronix International Co., Ltd. | Damascene phase change RAM and manufacturing method |
| US7514367B2 (en) * | 2005-06-17 | 2009-04-07 | Macronix International Co., Ltd. | Method for manufacturing a narrow structure on an integrated circuit |
| US7238994B2 (en) | 2005-06-17 | 2007-07-03 | Macronix International Co., Ltd. | Thin film plate phase change ram circuit and manufacturing method |
| US7321130B2 (en) | 2005-06-17 | 2008-01-22 | Macronix International Co., Ltd. | Thin film fuse phase change RAM and manufacturing method |
| US8237140B2 (en) * | 2005-06-17 | 2012-08-07 | Macronix International Co., Ltd. | Self-aligned, embedded phase change RAM |
| US7514288B2 (en) * | 2005-06-17 | 2009-04-07 | Macronix International Co., Ltd. | Manufacturing methods for thin film fuse phase change ram |
| US7397060B2 (en) * | 2005-11-14 | 2008-07-08 | Macronix International Co., Ltd. | Pipe shaped phase change memory |
| US20070111429A1 (en) * | 2005-11-14 | 2007-05-17 | Macronix International Co., Ltd. | Method of manufacturing a pipe shaped phase change memory |
| US7635855B2 (en) | 2005-11-15 | 2009-12-22 | Macronix International Co., Ltd. | I-shaped phase change memory cell |
| US7394088B2 (en) * | 2005-11-15 | 2008-07-01 | Macronix International Co., Ltd. | Thermally contained/insulated phase change memory device and method (combined) |
| US7786460B2 (en) | 2005-11-15 | 2010-08-31 | Macronix International Co., Ltd. | Phase change memory device and manufacturing method |
| US7450411B2 (en) | 2005-11-15 | 2008-11-11 | Macronix International Co., Ltd. | Phase change memory device and manufacturing method |
| US7414258B2 (en) | 2005-11-16 | 2008-08-19 | Macronix International Co., Ltd. | Spacer electrode small pin phase change memory RAM and manufacturing method |
| US7829876B2 (en) | 2005-11-21 | 2010-11-09 | Macronix International Co., Ltd. | Vacuum cell thermal isolation for a phase change memory device |
| US7479649B2 (en) | 2005-11-21 | 2009-01-20 | Macronix International Co., Ltd. | Vacuum jacketed electrode for phase change memory element |
| US7507986B2 (en) | 2005-11-21 | 2009-03-24 | Macronix International Co., Ltd. | Thermal isolation for an active-sidewall phase change memory cell |
| TWI318003B (en) | 2005-11-21 | 2009-12-01 | Macronix Int Co Ltd | Air cell thermal isolation for a memory array formed of a programmable resistive material |
| US7449710B2 (en) | 2005-11-21 | 2008-11-11 | Macronix International Co., Ltd. | Vacuum jacket for phase change memory element |
| US7599217B2 (en) | 2005-11-22 | 2009-10-06 | Macronix International Co., Ltd. | Memory cell device and manufacturing method |
| US7688619B2 (en) | 2005-11-28 | 2010-03-30 | Macronix International Co., Ltd. | Phase change memory cell and manufacturing method |
| US7459717B2 (en) | 2005-11-28 | 2008-12-02 | Macronix International Co., Ltd. | Phase change memory cell and manufacturing method |
| US7521364B2 (en) | 2005-12-02 | 2009-04-21 | Macronix Internation Co., Ltd. | Surface topology improvement method for plug surface areas |
| JP4061328B2 (ja) * | 2005-12-02 | 2008-03-19 | シャープ株式会社 | 可変抵抗素子及びその製造方法 |
| US7605079B2 (en) * | 2005-12-05 | 2009-10-20 | Macronix International Co., Ltd. | Manufacturing method for phase change RAM with electrode layer process |
| US7642539B2 (en) * | 2005-12-13 | 2010-01-05 | Macronix International Co., Ltd. | Thin film fuse phase change cell with thermal isolation pad and manufacturing method |
| US7531825B2 (en) | 2005-12-27 | 2009-05-12 | Macronix International Co., Ltd. | Method for forming self-aligned thermal isolation cell for a variable resistance memory array |
| US8062833B2 (en) * | 2005-12-30 | 2011-11-22 | Macronix International Co., Ltd. | Chalcogenide layer etching method |
| US7595218B2 (en) * | 2006-01-09 | 2009-09-29 | Macronix International Co., Ltd. | Programmable resistive RAM and manufacturing method |
| US7560337B2 (en) | 2006-01-09 | 2009-07-14 | Macronix International Co., Ltd. | Programmable resistive RAM and manufacturing method |
| US7741636B2 (en) * | 2006-01-09 | 2010-06-22 | Macronix International Co., Ltd. | Programmable resistive RAM and manufacturing method |
| US7825396B2 (en) * | 2006-01-11 | 2010-11-02 | Macronix International Co., Ltd. | Self-align planerized bottom electrode phase change memory and manufacturing method |
| US7432206B2 (en) * | 2006-01-24 | 2008-10-07 | Macronix International Co., Ltd. | Self-aligned manufacturing method, and manufacturing method for thin film fuse phase change ram |
| US7456421B2 (en) * | 2006-01-30 | 2008-11-25 | Macronix International Co., Ltd. | Vertical side wall active pin structures in a phase change memory and manufacturing methods |
| US7956358B2 (en) * | 2006-02-07 | 2011-06-07 | Macronix International Co., Ltd. | I-shaped phase change memory cell with thermal isolation |
| US7910907B2 (en) | 2006-03-15 | 2011-03-22 | Macronix International Co., Ltd. | Manufacturing method for pipe-shaped electrode phase change memory |
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| US7928421B2 (en) | 2006-04-21 | 2011-04-19 | Macronix International Co., Ltd. | Phase change memory cell with vacuum spacer |
| US8129706B2 (en) * | 2006-05-05 | 2012-03-06 | Macronix International Co., Ltd. | Structures and methods of a bistable resistive random access memory |
| US7608848B2 (en) * | 2006-05-09 | 2009-10-27 | Macronix International Co., Ltd. | Bridge resistance random access memory device with a singular contact structure |
| US7423300B2 (en) | 2006-05-24 | 2008-09-09 | Macronix International Co., Ltd. | Single-mask phase change memory element |
| US7820997B2 (en) * | 2006-05-30 | 2010-10-26 | Macronix International Co., Ltd. | Resistor random access memory cell with reduced active area and reduced contact areas |
| US7732800B2 (en) * | 2006-05-30 | 2010-06-08 | Macronix International Co., Ltd. | Resistor random access memory cell with L-shaped electrode |
| US7696506B2 (en) | 2006-06-27 | 2010-04-13 | Macronix International Co., Ltd. | Memory cell with memory material insulation and manufacturing method |
| US7785920B2 (en) | 2006-07-12 | 2010-08-31 | Macronix International Co., Ltd. | Method for making a pillar-type phase change memory element |
| US7442603B2 (en) * | 2006-08-16 | 2008-10-28 | Macronix International Co., Ltd. | Self-aligned structure and method for confining a melting point in a resistor random access memory |
| US7560723B2 (en) | 2006-08-29 | 2009-07-14 | Micron Technology, Inc. | Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication |
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| US7510929B2 (en) * | 2006-10-18 | 2009-03-31 | Macronix International Co., Ltd. | Method for making memory cell device |
| US7863655B2 (en) * | 2006-10-24 | 2011-01-04 | Macronix International Co., Ltd. | Phase change memory cells with dual access devices |
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| US20080094885A1 (en) * | 2006-10-24 | 2008-04-24 | Macronix International Co., Ltd. | Bistable Resistance Random Access Memory Structures with Multiple Memory Layers and Multilevel Memory States |
| US8067762B2 (en) | 2006-11-16 | 2011-11-29 | Macronix International Co., Ltd. | Resistance random access memory structure for enhanced retention |
| US7476587B2 (en) * | 2006-12-06 | 2009-01-13 | Macronix International Co., Ltd. | Method for making a self-converged memory material element for memory cell |
| US7682868B2 (en) | 2006-12-06 | 2010-03-23 | Macronix International Co., Ltd. | Method for making a keyhole opening during the manufacture of a memory cell |
| US7473576B2 (en) * | 2006-12-06 | 2009-01-06 | Macronix International Co., Ltd. | Method for making a self-converged void and bottom electrode for memory cell |
| US7697316B2 (en) * | 2006-12-07 | 2010-04-13 | Macronix International Co., Ltd. | Multi-level cell resistance random access memory with metal oxides |
| US7903447B2 (en) * | 2006-12-13 | 2011-03-08 | Macronix International Co., Ltd. | Method, apparatus and computer program product for read before programming process on programmable resistive memory cell |
| US8344347B2 (en) | 2006-12-15 | 2013-01-01 | Macronix International Co., Ltd. | Multi-layer electrode structure |
| US7718989B2 (en) | 2006-12-28 | 2010-05-18 | Macronix International Co., Ltd. | Resistor random access memory cell device |
| US7515461B2 (en) * | 2007-01-05 | 2009-04-07 | Macronix International Co., Ltd. | Current compliant sensing architecture for multilevel phase change memory |
| US7440315B2 (en) | 2007-01-09 | 2008-10-21 | Macronix International Co., Ltd. | Method, apparatus and computer program product for stepped reset programming process on programmable resistive memory cell |
| US7433226B2 (en) | 2007-01-09 | 2008-10-07 | Macronix International Co., Ltd. | Method, apparatus and computer program product for read before programming process on multiple programmable resistive memory cell |
| US7535756B2 (en) | 2007-01-31 | 2009-05-19 | Macronix International Co., Ltd. | Method to tighten set distribution for PCRAM |
| US7663135B2 (en) | 2007-01-31 | 2010-02-16 | Macronix International Co., Ltd. | Memory cell having a side electrode contact |
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- 2003-04-23 JP JP2003118298A patent/JP2003332530A/ja not_active Ceased
- 2003-05-08 EP EP03252885A patent/EP1369925A3/en not_active Withdrawn
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| KR101006515B1 (ko) | 2004-06-30 | 2011-01-10 | 주식회사 하이닉스반도체 | 상변환 기억 소자 및 그 제조방법 |
| JP2006295130A (ja) * | 2005-03-15 | 2006-10-26 | Elpida Memory Inc | メモリ装置及びその製造方法 |
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| JP2007142224A (ja) * | 2005-11-19 | 2007-06-07 | Elpida Memory Inc | 不揮発性半導体記憶装置 |
| JP2007149913A (ja) * | 2005-11-28 | 2007-06-14 | Elpida Memory Inc | 不揮発性メモリ素子及びその製造方法 |
| JP2007294998A (ja) * | 2005-12-02 | 2007-11-08 | Sharp Corp | 可変抵抗素子及びその製造方法 |
| JP2007243169A (ja) * | 2006-02-07 | 2007-09-20 | Qimonda Ag | 遮熱機構を有する相変化メモリセル |
| WO2007125674A1 (ja) * | 2006-04-28 | 2007-11-08 | Sharp Kabushiki Kaisha | 可変抵抗素子及びその製造方法 |
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| JP2009218259A (ja) * | 2008-03-07 | 2009-09-24 | Toshiba Corp | 不揮発性記憶装置及びその製造方法 |
| JP2009246309A (ja) * | 2008-03-31 | 2009-10-22 | Toshiba Corp | 不揮発性記憶装置及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1369925A2 (en) | 2003-12-10 |
| CN1457058A (zh) | 2003-11-19 |
| EP1369925A3 (en) | 2005-06-15 |
| US6605821B1 (en) | 2003-08-12 |
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