JP2003332313A - Manufacturing method of semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve the yield and stabilize productivity of a semiconductor device, by removing resist and polymer residues from a substrate surface, after dry etching for cleaning up thereof. <P>SOLUTION: After dry etching is carried out by the use of the resist patterned on the substrate as a mask, the substrate surface is irradiated with far-ultraviolet rays, having a wavelength of such as 185 nm and 254 nm. After this, the resist is removed by dry ashing using a plasma or wet processing, using a resist-peeling liquid. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device and an apparatus for manufacturing the same, and more particularly, to removal of a resist after dry etching and a polymer residue generated by etching.

[0002]

2. Description of the Related Art In recent years, with the miniaturization of semiconductor devices and the densification of semiconductor elements, the number of wiring layers has increased. In addition, higher speed is required at the same time as the integration and size reduction of the semiconductor integrated circuit. When the wiring width and the wiring interval are narrowed to increase the density, RC delay occurs due to an increase in wiring resistance (R) and wiring capacitance (C). As the speed of semiconductor devices increases, RC delay becomes a problem out of the total circuit delay of semiconductor integrated circuits.

In order to reduce RC delay, a dual damascene process using Cu as a wiring material to reduce wiring resistance (Cu dual damascene processes)
s) is under development. In this dual damascene process, resist patterning is performed and dry etching is performed to integrally form wiring trenches and contact holes for interlayer conduction in the interlayer insulating layer, and these trenches and contact holes are filled with Cu. Deposit a metal layer. By using Cu having a low resistance and a large atomic weight, the wiring resistance is reduced and, at the same time, electromigration is suppressed.

In the step of forming a contact hole, after dry etching, the resist is removed by dry ashing treatment and wet treatment using an amine chemical.

FIG. 1 is a diagram showing a manufacturing process for forming a contact hole of a semiconductor device. Referring to FIG. 1 (A), a poly-Si film 202 is formed on a substrate 201 carrying a SiO ₂ film 201A, a conductive layer 203 such as cobalt silicide (CoSi ₂ ) is formed thereon, and a poly-Si film 202 is formed thereon. , An SiO ₂ interlayer insulating film 204 is formed. Figure 1
Referring to (B), the resist 2 is formed on the interlayer insulating film 204.
After uniformly applying 05, pattern exposure is performed and development is performed to form a resist 205 to which the pattern is transferred.
Referring to FIG. 1C, the interlayer insulating film 204 is etched by dry etching such as RIE (reactive ion etching) using the resist 205 as a mask,
A contact hole 204-1 is formed. Referring to FIG. 1D, next, the resist 205 and the polymer residue 205-1 in which the resist 205 is decomposed and altered by the dry etching of FIG. 1C are subjected to a dry ashing treatment by oxygen plasma and an amine chemical solution. It is removed by a wet treatment using.

FIG. 2 is a diagram showing a manufacturing process for forming a metal wiring structure of a semiconductor device. Referring to FIG. 2A, an insulating film 212 such as SiO ₂ is formed on a substrate 211, and a metal film 213 such as Al or W is formed thereon. Referring to FIG. 2B, a resist 214 is formed on the metal film 213. With reference to FIG. 2C, the metal film 213 is etched by RIE or the like using the patterned resist 214 as a mask to form a metal wiring pattern. Next, referring to FIG.
The polymer residue 214-1 in which the resist is decomposed and modified by the dry etching of (C) is removed by a dry ashing process using oxygen plasma and a wet process using an amine chemical solution.

Dry ashing treatment is carried out by O ₂ plasma,
The resist and polymer residues are converted to CO ₂ and H ₂ O using H ₂ O plasma, a high density plasma source. On the other hand, the wet treatment using an amine-based chemical solution, for example, with alkaline amines such as hydroxyamines,
A resist and a polymer residue are dissolved by a dipping method, a shower method, or the like using a water-soluble organic solvent and a release agent composed of an anticorrosive agent and water, and then removed from the substrate surface.

[0008]

However, as shown in FIG.
Referring to (D) and FIG. 2 (D), resists 205, 214 and polymer residues 205- of these treatments
The removal capability of Nos. 1 and 214-1 is not perfect, and a part thereof may remain on the surface of the interlayer insulating film 204, the conductive layer 203 on the bottom surface of the contact hole, or the metal film 213. In particular, polymer residues tend to remain due to variations in dry ashing conditions, deterioration of chemicals in wet treatment, and the like, and this may cause the surface cleanliness to be significantly impaired. In such a case, an increase in contact resistance, short-circuiting or disconnection of wiring, etc. occur, resulting in a decrease in production yield and a marked decrease in productivity of the semiconductor device. Furthermore, the operational reliability of the semiconductor device is significantly impaired.

Therefore, the present invention has been made in view of the above problems, and it is an object of the present invention to remove the resist and polymer residue on the substrate surface and to improve the production yield of semiconductor devices. An object of the present invention is to provide a method for manufacturing a semiconductor device capable of stabilizing productivity.

[0010]

According to the first aspect of the present invention, there is provided a semiconductor device including a resist removing step of removing the resist after performing dry etching using a resist patterned on a substrate as a mask. In the resist removing step, the surface of the substrate is irradiated with ultraviolet rays, and then the resist is removed.

According to the first aspect of the present invention, by irradiating the surface of the substrate with ultraviolet rays, the bonds of organic substances constituting the resist and the polymer residue on the substrate surface are cleaved,
For example, it can be a free radical of an organic compound or a molecule in an excited state. Also, it is generated by the irradiation of ultraviolet rays.
The generated ozone O ₃ and oxygen radical O ^* combine with free radicals of an organic compound and molecules in an excited state to form C.
It is possible to volatilize it into a substance such as O ₂ or H ₂ O, and to modify the surface of the substrate into a hydrophilic group of an organic compound, and to remove the resist in the subsequent treatment for removing the resist. It can be easily removed. Therefore, the resist and polymer residue on the surface of the substrate can be removed for cleaning.

Further, as described in claim 2, in the method of manufacturing a semiconductor device according to claim 1, the resist may be a chemically amplified resist.

According to the invention of claim 2, when the chemically amplified resist is irradiated with ultraviolet rays, it becomes alkali-soluble,
In the subsequent process of removing the resist, it becomes easy to remove. Therefore, the resist and polymer residue on the surface of the substrate can be removed for cleaning.

According to a third aspect of the present invention, in the method of manufacturing a semiconductor device according to the first or second aspect, in the resist removing step, dry ashing using plasma or wet treatment using a resist stripping solution is performed. Then, the resist can be removed.

According to the third aspect of the present invention, the resist and the polymer residue on the surface of the substrate, which are easily removed by the irradiation of ultraviolet rays, can be easily removed by dry ashing or wet treatment.

Further, as described in claim 4, in the method of manufacturing a semiconductor device according to any one of claims 1 to 3, the resist removing step irradiates ultraviolet rays while heating the substrate. Can be

According to the invention described in claim 4, by heating the substrate, ozone O ₃ and oxygen radicals O _{3 are} generated.
^* Can accelerate the reaction of binding with free radicals of organic compounds and molecules in an excited state. Further, in the chemically amplified resist, the reaction of becoming alkali-soluble can be promoted by heating. Therefore, the resist and the polymer residue on the substrate surface can be removed more easily.

According to a fifth aspect of the present invention, in the method of manufacturing a semiconductor device according to any one of the first to fourth aspects, the ultraviolet rays have a wavelength band for generating ozone,
A wavelength band that generates oxygen radicals can be included.

According to the fifth aspect of the present invention, it is possible to adjust the generation amount and generation ratio of ozone O ₃ and oxygen radical O ^* by such ultraviolet rays, and to adjust the resist and polymer residue on the substrate surface. It is possible to optimize the conditions for removing the impurities and suppress damage to the substrate surface.

[0020]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

First, an embodiment of a method for manufacturing a semiconductor device according to the present invention will be described below. (First Embodiment) In this embodiment, a wiring structure having contacts of a semiconductor device is formed.

3A to 3E are views showing a manufacturing process of the semiconductor device 10 of this embodiment.

Referring to FIG. 3 (A), a substrate 11 made of, for example, a Si wafer is provided with a thickness of 160 n, for example.
The m poly-Si film 12 is formed by the CVD method. A CoSi ₂ film 13 having a thickness of, for example, 5 nm, which forms an ohmic contact with the poly Si film 12, is formed thereon by a sputtering method, a vapor deposition method, or the like. An interlayer insulating film 14 made of SiO _{2 and having a} thickness of 700 nm, for example, is provided on the CV.
It is formed by the D method, the sputtering method, or the like.

Referring to FIG. 3B, next, in order to form a contact hole, a resist 15 having a thickness of 730 nm, for example, is applied on the interlayer insulating film 14 by a spin coater or the like. As the resist 15, for example, a chemically amplified resist is used. Next, after prebaking in an oven or the like, mask exposure is performed with a stepper to transfer the pattern. Next, development is performed to remove the photosensitive portion of the positive resist 15, for example, to form a mask.

For example, KrF excimer laser light (wavelength 2
When exposed to this light, the positive-type chemically amplified resist used in the lithography (59 nm) produces an acid, and the acid removes the protective group protecting the alkali-soluble group. Appear some alkali-soluble groups. Then, the exposed portion is dissolved and removed by a developing solution containing alkaline amines such as hydroxyamines, a water-soluble organic solvent, an anticorrosive and water.

Referring to FIG. 3C, the contact hole 14-1 is formed by dry etching having anisotropy using the patterned resist 15 as a mask. Dry etching is performed by, for example, parallel plate type RIE.
By using the apparatus, CF ₄ gas is used for the interlayer insulating film 14 made of SiO ₂ . In the chamber, radicals such as F ^* and CF ^* are generated by plasma discharge, SiO ₂ is decomposed, and SiF ₄ or the like is discharged to the outside of the chamber to form a contact hole 14-1. On the other hand, the resist surface, which is a mask, is exposed to plasma or heat, and the resist is altered or decomposed to generate a polymer residue 15-1 which adheres to the side wall or bottom surface of the contact hole 14-1 together with an etching residue such as SiO _2. .

Referring to FIG. 3D, next, the surface of such a substrate is irradiated with ultraviolet rays. As the wavelength of the ultraviolet rays, far ultraviolet rays having a wavelength of 300 nm or less are selected. When irradiated with deep ultraviolet rays having such a wavelength, the bond of the organic substance that constitutes the resist 15 can be cleaved to form, for example, a free radical of an organic compound or a molecule in an excited state. This reaction is performed not only on the resist surface 15-1 but also on the resist 15
Since this also occurs in the resist inside, for example, the resist at the interface with the interlayer insulating film 14, the resist can be easily removed by the subsequent dry ashing process or the like. As a light source that generates such deep ultraviolet rays, for example, there is an ultraviolet lamp. The output of the light source is, for example, in the range of 100 mW / cm ² of 1000 mW / cm ^2.

As the ultraviolet rays, for example, far ultraviolet rays of about 280 nm are selected. When this far ultraviolet ray is irradiated,
In the case of a positive type chemically amplified resist, an acid is generated, and this acid removes the protective group that has protected the alkali-soluble group. Then, the resist becomes alkali-soluble and can be easily removed by a wet treatment described later. The output of the light source is, for example, 100 mW / cm ² to 1000 mW /
It is set in the range of cm ² . Further, heating the substrate with a hot plate or the like while irradiating with ultraviolet rays makes it easier to remove the resist. The heating temperature is, for example,
It is selected from the range of 20 ° C to 200 ° C.

Ultraviolet rays have a wavelength of, for example, 185 nm.
And deep UV of 254 nm is selected. An atmosphere containing oxygen
When exposed to 185 nm deep ultraviolet rays in the air, O_Two→
O ( ^ThreeP) + O (^ThreeP), O (^ThreeP) + O_Two→ O_ThreeAnti
Ozone O_ThreeOccurs. 254nm far purple
When an outside line is illuminated, O_Three→ O^*+ O_TwoThe reaction of
Oxygen radical O^*Occurs. Ozone O_ThreeAnd acid
Elementary radical O^*Has a strong oxidizing power, polymer residue
Or the resist is decomposed and the above-mentioned organic compound free radical
When combined with cal and excited molecules, CO_TwoAnd H_TwoO's
Change into a volatile substance such as eel. Also, resist and poly
The mer residue, if not volatilized, is
It becomes a hydrophilic group of organic compounds such as boxyl group,
The wettability is improved, and the wet treatment described below removes it.
Easier to be left.

Here, generation or generation of ozone O ₃ and oxygen radical O ^* is controlled by controlling the power of the wavelength band for generating ozone of 185 nm and the power of the oxygen radical wavelength band of 254 nm and the irradiation time of each wavelength band. The amount can be adjusted. For example, when irradiating far ultraviolet rays of 254 nm, the distance between the substrate and the lamp is 40 m.
As m, the lamp output of far ultraviolet rays is set to 30 J, and the irradiation time is set to a range of 10 minutes to 16 minutes, for example. As a lamp that generates such deep ultraviolet rays, for example, 2
There is a low-pressure mercury lamp for emitting a specific wavelength, which is manufactured to emit a wavelength of 54 nm. Also, for example, 185 nm
When irradiating far ultraviolet rays of 254 nm and 254 nm, the distance between the substrate and the lamp is set to 34 mm, the lamp output of far ultraviolet rays is set to 50 J, and the irradiation time is set to 5 minutes, for example. As a lamp that generates such deep ultraviolet rays, for example,
There are low-pressure mercury lamps for specific wavelength emission made to emit wavelengths of 85 nm and 254 nm.

Further, the ultraviolet rays are, for example, 172
Far UV of nm is selected. In an atmosphere containing oxygen,
If 172nm deep ultraviolet rays are irradiated, _{O 2} directly from the oxygen radicals ^{O *} are generated, also through _{O 3} from _{O 2} ^{O *}
Is generated. Such ozone O ₃ and oxygen radicals O ^* exhibit the same action as the deep ultraviolet rays of 185 nm and 254 nm described above. An example of a light source that generates such deep ultraviolet rays is an excimer barrier lamp. The output of the light source is, for example, 100 mW / cm ²
To 1000 mW / cm ² .

Irradiation of ultraviolet rays is performed by, for example, the apparatus shown in FIG. FIG. 4 is a cross-sectional view showing the structure of a single wafer type ultraviolet irradiation device.

Referring to FIG. 4, the ultraviolet irradiation device 100.
Is an ultraviolet lamp 101 provided so as to irradiate ultraviolet rays downward in the upper part of the chamber 110 capable of depressurizing.
And an irradiation condensing plate 102 provided directly below the ultraviolet lamp 101 and having a plurality of perforations at a predetermined interval, and provided so as to surround the ultraviolet lamp 101, and a lower edge integrally with an outer edge of the irradiation condensing plate 102. Upper baffle plate 1
03, a lower baffle plate 105 that extends to the irradiation focusing plate 102 and is provided so as to surround the substrate 113, a gas introduction unit 104 that is provided on the lower baffle plate 105 and supplies a process gas such as oxygen gas, A gate valve 106 that opens and closes a supply / unload port of the substrate 113, a mechanism unit 107 that attaches and detaches the substrate 113, a heating unit 108 that heats the substrate 113, an exhaust port 109 that exhausts gas, and a substrate 113.
It is configured by a transport mechanism section 111 that transports the substrate and a support base 112 that supports the substrate 113.

As the ultraviolet lamp 101, for example, an excimer barrier lamp of Xe ₂ filling gas is used. Wavelength is 1
It can emit deep ultraviolet rays of 72 nm.

The irradiation / focusing plate 102 is composed of a mirror-finished member having perforations at predetermined intervals.
The irradiation condensing plate 102 is, as shown by the arrow in FIG.
It is used to uniformize the irradiation energy of far ultraviolet rays emitted from the ultraviolet lamp 101 over the entire substrate 113, improve the efficiency of the irradiation energy, and accelerate the reaction of ozone O ₃ and oxygen radicals O ^* .

The upper baffle plate 103 is made of a material similar to that of the irradiation / focusing plate 102, and is made of a mirror-finished member. The upper baffle plate 103, together with the irradiation condensing plate 102, is for uniformizing the irradiation energy of far ultraviolet rays over the entire substrate 113, and particularly for increasing the irradiation energy of the outer edge portion of the substrate 113.

The lower baffle plate 105 is composed of a top plate extending from the irradiation / focusing plate 102 and side plates provided so as to surround the substrate 113 and the like. The lower baffle plate has a gas introduction part 10 for supplying oxygen gas or the like.
4 are provided. Ozone O ₃ and oxygen radicals O ^* are generated and generated by the reaction between the gas supplied from the gas introduction unit and deep ultraviolet rays, and are introduced to the surface of the substrate 113.

The heating unit 108 is equipped with, for example, a resistance heater. By heating the substrate 113 by the heating unit 108, the reaction of ozone O ₃ and oxygen radicals O ^* with the resist and the polymer residue on the surface of the substrate 113 can be promoted.

The ultraviolet irradiation device 100 is combined with, for example, a cluster type semiconductor manufacturing device described later, and the chambers in the preceding and following steps and the substrate 113 are supplied and carried out through the gate valve 106.

Referring to FIG. 3E, next, the resist and the polymer residue decomposed by the deep UV treatment are removed by dry ashing, and the surface of the interlayer insulating film 14 and the side wall of the contact hole 14-1. Clean the bottom surface. Dry ashing is performed by, for example, a parallel plate type plasma ashing device using oxygen plasma, a horizontal barrel plasma ashing device, or the like. In dry ashing, oxygen gas is introduced into the chamber of these devices, oxygen plasma is generated by an RF power source, and the residual resist and polymer residue due to the oxygen plasma are changed to CO ₂ , H ₂ O, etc., It can be evacuated outside the chamber.

Next, by wet processing, the interlayer insulating film 1 is formed.
The surface of No. 4, the side wall of the contact hole 14-1, the bottom surface, etc. are further cleaned. For the wet treatment, for example, an alkaline amine, a water-soluble organic solvent, an anticorrosive agent, and a release agent composed of water or the like are used. As the wet treatment, a dipping method, a spray method or the like is used. By the wet treatment, the resist and the polymer residue decomposed by the deep UV treatment can be removed. Further, the acid remaining on the surface can be neutralized and removed.

Next, for example, Cu and AlC having a thickness of 2 μm
The metal wiring film 16 made of u alloy is formed by vapor deposition, sputtering,
It is deposited by a plating method or the like. Furthermore, the metal wiring film 1
The surface of 6 is flattened by chemical mechanical polishing (CMP).

As described above, the wiring structure of the semiconductor device 10 having the contact 16-1 is formed as shown in FIG.

An example according to this embodiment will be described below. [First Example] This example is an example of a method of manufacturing the semiconductor device 10 having the contact according to the first embodiment. The configuration of this embodiment is similar to that of the semiconductor device 10.

Substrate 11 made of 8-inch Si wafer
Then, a poly-Si film 12 having a thickness of 160 nm is formed by the CVD method. On top of that, a CoSi ₂ film 13 having a thickness of 5 nm is formed.
Are formed by a sputtering method.

Next, an interlayer insulating film 14 made of SiO _{2 and having a} thickness of 700 nm, for example, is formed thereon by the CVD method. Then, a positive type chemically amplified resist resist 15 for KrF lithography having a thickness of 730 nm is applied by a spin coater. After prebaking, mask exposure is performed to transfer the pattern. Next, development is performed to remove the photosensitive portion and form a mask for dry etching.

Next, part of the interlayer insulating film 14 is removed by dry etching using the resist as a mask to form a contact hole 14-1. Immediately after the dry etching, the ultraviolet irradiation device was used to measure 280 nm to 330 n
Far ultraviolet rays having a wavelength of m were irradiated onto the substrate surface for 5 minutes while flowing N ₂ gas. Next, the RF power is set to 700 by a parallel plate type plasma ashing device using oxygen plasma.
W, the flow rate of oxygen gas is 10000 sccm, the substrate temperature is 250 ° C., and the ashing process time is 90 seconds.
Dry ashing was performed. Next, the amine-based chemical solution having the following composition is brought to 75 ° C., and a wet treatment is performed by a dipping method to 1
It went for 6 minutes. Next, an AlCu alloy having a thickness of 2 μm is vapor-deposited, CMP is performed, and the semiconductor device 1 having a contact is formed.
Formed 0.

When the sample after the wet treatment was inspected by the light scattering method, it was confirmed that the surfaces of the contact hole 14-1 and the interlayer insulating film 14 were normal.

As described above, according to this embodiment and this embodiment, by irradiating deep ultraviolet rays after dry etching, it is easy to remove the resist and the polymer residue,
By the subsequent dry ashing and wet treatment,
Of the surface of the interlayer insulating film 14 and the contact hole 14-1,
The side wall, the bottom surface, and the like can be cleaned, and a semiconductor device having a wiring structure with low contact resistance can be formed. (Second Embodiment) This embodiment forms a metal wiring structure of a semiconductor device.

FIGS. 5A to 5E are views showing the manufacturing process of the semiconductor device 20 of this embodiment.

Referring to FIG. 5A, for example, a substrate 21 made of, for example, a Si wafer has a thickness of 500 n.
The insulating film 22 made of m ₂ of SiO ₂ is formed by a high density CVD method or the like. On top of that, for example, a thickness of 500 nm
The metal wiring film 23 made of AlCu alloy is formed by a sputtering method or the like.

Referring to FIG. 5B, next, a resist 24 having a thickness of 1300 nm is formed and patterned in the same manner as in the first embodiment.

With reference to FIG. 5C, a portion of the metal wiring film 23 is removed by dry etching having anisotropy using the patterned resist 24 as a mask to form a metal wiring. . The dry etching is performed by using, for example, an ECR (electron cyclotron resonance) plasma etching apparatus on the metal wiring film 23 made of an AlCu alloy using CCl ₄ gas. In the chamber, radicals such as Cl ^* are generated by plasma discharge, the AlCu alloy is decomposed, and AlCl ₃ or the like is discharged to the outside of the chamber to form metal wiring. On the other hand, the resist surface 24-1, which is a mask, is exposed to plasma or heat, and the resist is altered or decomposed to generate a polymer residue, and the side wall of the metal wiring film 23 or the surface of the insulating film 22 together with an etching residue such as an AlCu alloy. Adhere to.

Referring to FIG. 5D, next, in the same manner as in the first embodiment, the surface of such a substrate is irradiated with deep ultraviolet rays. For example, by irradiation with far ultraviolet rays having a wavelength of 300 nm or less, the bond of the organic substance that constitutes the resist 24 can be cleaved to form, for example, a free radical of an organic compound or a molecule in an excited state. Further, for example, by irradiation with deep ultraviolet rays of about 280 nm, the positive chemically amplified resist becomes alkali-soluble, and the wet treatment facilitates removal. Further, heating the substrate with a hot plate or the like while irradiating with ultraviolet rays makes it easier to remove the resist. Further, for example, by irradiation with far ultraviolet rays of 185 nm and 254 nm or 172 nm in an atmosphere containing oxygen, ozone O ₃ and oxygen radicals O
^* Is generated and generated, has a strong oxidizing power, decomposes polymer residues and resists, and combines with the above-mentioned organic compound free radicals and excited state molecules to form substances such as CO ₂ and H ₂ O. And volatilize. Further, even if it is not volatilized, it becomes a hydrophilic group such as a carbonyl group or a carboxyl group to improve wettability with water, and is easily removed by a wet treatment described later.

With reference to FIG. 5E, next, in the same manner as in the first embodiment, the resist and the polymer residue decomposed by the far-ultraviolet treatment are removed by dry ashing and wet treatment to remove the metal wiring film. The surface and side surface of 23 and the surface of the insulating film 22 are cleaned.

Next, an interlayer insulating film 25 of SiO _{2 having} a thickness of 1 μm is formed by a high density CVD method or the like. Next, the surface of the interlayer insulating film 25 is flattened by CMP.

As described above, the metal wiring structure of the semiconductor device 20 is formed as shown in FIG.

According to this embodiment, the resist and the polymer residue are easily removed by irradiating the deep ultraviolet rays after the dry etching, and the side wall of the metal wiring film 23 or the insulating film 22 is formed by the subsequent dry ashing and the wet treatment. The resist and the polymer residue on the surface of can be removed to clean the semiconductor device, and a semiconductor device having a wiring structure without disconnection or short circuit of the wiring can be formed.

A manufacturing apparatus that can be used in the semiconductor device manufacturing method of the present invention will be described below. Specifically, it is a cluster-type semiconductor manufacturing apparatus including a dry etching apparatus having an ultraviolet irradiation means, a wet processing apparatus having an ultraviolet irradiation means, and a chamber having an ultraviolet irradiation means.

The ultraviolet irradiation device 10 shown in FIG. 4 described above.
0 has only an ultraviolet irradiation means in the chamber. However, for example, it is possible to provide ultraviolet irradiation means in the dry etching apparatus and perform ultraviolet irradiation in the same chamber after dry etching.

FIG. 6 is a sectional view showing the structure of the dry etching apparatus 120 equipped with the ultraviolet irradiation means.

Referring to FIG. 6, the dry etching apparatus 120 includes an RF power source 1 in a chamber 130 capable of reducing the pressure.
22 is connected to the upper electrode 121, a lower electrode 125 that is arranged to face the upper electrode and is grounded, a gas introduction portion 123 that supplies a process gas, and the chamber 13
An exhaust port 127 to which a vacuum pump or the like for exhausting the inside of 0 is connected, an ultraviolet lamp 129, and ultraviolet rays are transmitted,
An optical window 128 is provided to isolate the ultraviolet lamp 129 from radicals generated during dry etching. The substrate 124 can be rotated by the rotation drive unit 126.

With this dry etching apparatus 120,
The procedure of performing dry etching and ultraviolet irradiation will be described below. First, the substrate 124 is placed on the lower electrode 125, and the inside of the chamber 130 is evacuated to a vacuum degree of, for example, about 10 ⁻⁶ Pa. Next, a process gas such as CF ₄ gas is supplied from the gas introduction part 123 to supply the upper electrode 12
The mixed gas flows into the space sandwiched between 1 and the lower electrode 125. Next, an RF voltage is applied by the RF power source 122 to cause plasma discharge. The radicals of the process gas generated by the plasma discharge react with, for example, the interlayer insulating film on the surface of the substrate 124 and etch the surface of the substrate 124. The etching is performed while exhausting the generated gas.
Next, for example, Ar gas containing oxygen gas is introduced into the gas introducing unit 1.
23, and while the substrate 124 is being rotated, ultraviolet rays are emitted from the ultraviolet lamp 129. The wavelength, output, irradiation time, etc. of the ultraviolet rays of the ultraviolet lamp are selected in the same manner as in the first embodiment.

With this dry etching apparatus 120,
The resist and the polymer residue generated by dry etching can be immediately irradiated with ultraviolet rays without being exposed to the atmosphere. Then, the irradiation of ultraviolet rays can cleave the bonds of the organic substances in the resist and the polymer residue, and the ozone O ₃ and the oxygen radical O ^* can decompose the resist and the polymer residue to further modify them into hydrophilic groups.
As a result, these resists and polymer residues can be easily removed in the subsequent dry ashing or wet treatment.

Next, a semiconductor manufacturing apparatus in which the wet processing apparatus is provided with ultraviolet irradiation means will be described. FIG. 7 is a cross-sectional view showing the configuration of the wet processing apparatus 140 including the ultraviolet irradiation means. Referring to FIG. 7, the wet processing apparatus 140 includes a single-wafer type substrate carrier 14 capable of depressurizing.
Chamber 15 having a door 143 capable of supplying and discharging 4
0, a nozzle 142 for supplying a chemical such as a resist stripper and a process gas, an ultraviolet lamp 141, a substrate carrier 144 on which a substrate 145 is arranged, which is rotatable by a rotating mechanism 148 and a rotor 146, and a chemical. It is composed of an exhaust / waste liquid port 147 for discarding and exhausting gas generated by irradiation of ultraviolet rays.

The procedure for performing the ultraviolet irradiation and the wet treatment by the wet treatment device 140 will be described below. First, the substrate 145 is placed on the substrate carrier 144, and the door 143 is used to move the substrate carrier 144 into the chamber.
To place. Next, the inside of the chamber is temporarily evacuated, Ar gas containing, for example, oxygen gas is supplied from the nozzle 142, and ultraviolet rays are emitted from the ultraviolet lamp 141 while rotating the substrate 145. Next, after exhausting the gas generated by the irradiation of ultraviolet rays, the chemicals for wet processing are sprayed from the nozzle 142 while rotating the substrate 145 as shown by the arrow in FIG. Next, while rotating the substrate 145, the rinse liquid is sprayed from the nozzle 142 to neutralize and clean the surface of the substrate 145. The wavelength, output, irradiation time, etc. of the ultraviolet rays of the ultraviolet lamp are selected in the same manner as in the first embodiment.

By this wet processing device 140, the resist and the polymer residue generated by the dry etching are irradiated with ultraviolet rays to break the bonds of organic substances in the resist and the polymer residue, and by ozone O ₃ and oxygen radical O ^* , The resist and polymer residues can be decomposed and further modified into hydrophilic groups. Then, the resist treatment and the polymer residue can be immediately removed from the substrate surface by the wet treatment, and the acid generated on the substrate surface can be neutralized.

Next, a cluster type semiconductor manufacturing apparatus in which the ultraviolet irradiation apparatus shown in FIG. 4 is combined with another processing apparatus will be described. FIG. 8 is a plan view showing a schematic configuration of a cluster device system 160 including a chamber provided with an ultraviolet irradiation means. Referring to FIG. 8, the cluster device system 160 includes an IN / OU for supplying and discharging a substrate.
T chamber 161, ultraviolet irradiation chamber 162 that performs ultraviolet irradiation processing, and ashing chamber 163 that performs dry ashing
The load-lock chamber 1 including a post-processing chamber 164 for performing post-processing, a measuring instrument chamber 165 for inspecting the cleanliness of the substrate surface, and a transfer robot 167 for supplying and discharging the substrate.
And 66.

With this cluster device system 160, the substrate supplied from the IN / OUT chamber 161 can be continuously treated to remove the resist, and the measuring instrument chamber 165 is provided with, for example, a contact angle measuring instrument. This makes it possible to inspect the cleanliness of the substrate surface after removing the resist. In addition, a reduced pressure atmosphere for each chamber,
For example, since the treatment can be performed at about 4000 Pa (30 Torr), the exhaust treatment device is provided at the exhaust port without releasing the by-products generated by the ozone O ₃ and the oxygen radicals O ^* of the ultraviolet irradiation treatment to the atmosphere. By providing it, it is possible to process safely. Figure 9
It is a figure which shows the structure of the exhaust processing apparatus 180 which can process the exhaust of such a cluster apparatus system. Referring to FIG. 9, the exhaust treatment device 180 includes a liquid ejector pump 181 using water, which is connected to an exhaust port of a cluster device system, a trap 182 for adsorbing an acidic gas or the like in the exhaust gas of the ejector pump 181. Trap 1
It is composed of a treatment facility 183 for treating various gases connected to 82 and a waste port for discarding the acid waste water of the ejector pump 181.

With this exhaust treatment device 180, the liquid ejector pump 181 can be exhausted, for example, from the cluster device system without being corroded by the acid gas contained in the waste, and the exhaust can be safely treated. it can.

Although the preferred embodiments of the present invention have been described in detail above, the present invention is not limited to the specific embodiments, and various modifications and changes can be made within the scope of the claims. It is possible. For example, in the first and second embodiments, the case where the dry ashing and the wet treatment are performed after the ultraviolet irradiation treatment has been described, but either one of the dry ashing and the wet treatment may be performed. Further, dry ashing, ultraviolet irradiation treatment, and wet treatment may be performed in this order.

The following supplementary notes will be disclosed with respect to the above description. (Supplementary Note 1) A method of manufacturing a semiconductor device, comprising: a resist removing step of removing the resist after dry etching using a resist patterned on the substrate as a mask, wherein the surface of the substrate is removed in the resist removing step. A method for manufacturing a semiconductor device, which comprises irradiating the substrate with ultraviolet rays and then removing the resist. (Supplementary Note 2) The method for producing a semiconductor device according to Supplementary Note 1, wherein the resist is a chemically amplified resist. (Supplementary Note 3) In the resist removing step, the resist is removed by performing dry ashing using plasma or a wet treatment using a resist stripping solution to remove the resist. . (Supplementary note 4) The method for manufacturing a semiconductor device according to any one of supplementary notes 1 to 3, wherein in the resist removing step, ultraviolet rays are irradiated while heating the substrate. (Supplementary Note 5) The method of manufacturing a semiconductor device according to any one of Supplementary notes 1 to 4, wherein the ultraviolet rays include a wavelength band in which ozone is generated and a wavelength band in which oxygen radicals are generated. (Supplementary Note 6) A semiconductor manufacturing apparatus for removing a resist after performing dry etching using a resist patterned on a substrate as a mask, and a means for decompressing a chamber and a substrate provided in the chamber. A semiconductor manufacturing apparatus, comprising: an ultraviolet ray irradiation means for irradiating the surface with ultraviolet rays. (Supplementary Note 7) The semiconductor manufacturing apparatus according to Supplementary Note 6, wherein the chamber is a dry etching apparatus. (Supplementary Note 8) A semiconductor manufacturing apparatus for removing a resist after performing dry etching using a resist patterned on a substrate as a mask, which is a wet processing means and an ultraviolet irradiation means for irradiating the surface of the substrate with ultraviolet rays. A semiconductor manufacturing apparatus comprising:

[0073]

As is apparent from the above detailed description, according to the present invention, the resist and polymer residues on the surface of the substrate are removed and cleaned to improve the production yield of semiconductor devices and stabilize the productivity. Can be planned.

[Brief description of drawings]

FIG. 1 is a diagram showing a manufacturing process for forming a contact hole of a conventional semiconductor device.

FIG. 2 is a diagram showing a manufacturing process for forming a metal wiring structure of a conventional semiconductor device.

FIG. 3 is a diagram showing a manufacturing process of the semiconductor device according to the first embodiment.

FIG. 4 is a cross-sectional view showing a configuration of an ultraviolet irradiation device.

FIG. 5 is a diagram showing a manufacturing process of the semiconductor device according to the second embodiment.

FIG. 6 is a cross-sectional view showing a configuration of a dry etching apparatus provided with an ultraviolet irradiation means.

FIG. 7 is a cross-sectional view showing a configuration of a wet processing apparatus including an ultraviolet irradiation means.

FIG. 8 is a plan view showing a schematic configuration of a cluster device system including a chamber provided with an ultraviolet irradiation means.

FIG. 9 is a diagram showing a configuration of an exhaust treatment apparatus attached to a semiconductor manufacturing apparatus.

[Explanation of symbols]

10, 20 Semiconductor device 11, 21 Substrate 12 Poly Si film 13 CoSi ₂ film 14, 25 Interlayer insulating film 15, 24 Resist 16, 23 Metal wiring film 16-1 Contact hole 22 Insulating film 101 Ultraviolet lamp 100 Ultraviolet irradiation device

Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01L 21/30 572B (72) Inventor Koichi Nakagawa 4-1, 1-1 Ueodachu, Nakahara-ku, Kawasaki-shi, Kanagawa Within Fujitsu Limited (72) Inventor Kazuhiro Miwa 2-1844, Kozoji-cho, Kasugai-shi, Aichi 2 F-term in Fujitsu Viels-E Co., Ltd. (reference) 2H096 AA25 BA20 HA23 JA04 LA01 LA02 LA06 LA09 5F004 AA09 BA04 BB05 BB18 BD01 DA26 DB26 EA38 FA08 5F046 MA04 MA12 MA13

Claims (5)

[Claims] 1. A method of manufacturing a semiconductor device, comprising: a resist removing step of removing the resist after performing dry etching using a resist patterned on the substrate as a mask, wherein in the resist removing step, the substrate of the substrate is removed. A method of manufacturing a semiconductor device, which comprises irradiating the surface with ultraviolet rays and then removing the resist. 2. The method of manufacturing a semiconductor device according to claim 1, wherein the resist is a chemically amplified resist. 3. The semiconductor device according to claim 1, wherein in the resist removing step, the resist is removed by performing dry ashing using plasma or wet treatment using a resist stripping solution. Production method. 4. The resist removing step irradiates with ultraviolet rays while heating the substrate.
4. The method for manufacturing a semiconductor device according to any one of 1 to 3. 5. The method of manufacturing a semiconductor device according to claim 1, wherein the ultraviolet rays include a wavelength band in which ozone is generated and a wavelength band in which oxygen radicals are generated.